A ceramic package casing in 3D stacked form

Abstract

The application is realized by the technical scheme as follows: a ceramic package tube in 3D stacked form, comprising upper, middle and lower substrates arranged in sequence from top to bottom, the upper substrate and the middle substrate are connected by copper assembly one and form accommodating cavity one, the middle substrate and the lower substrate are connected by copper assembly two and form accommodating cavity two, T and R of transceiver assembly are respectively placed in the accommodating cavity one and the accommodating cavity two, one end of the copper assembly one and the copper assembly two is respectively connected with the upper substrate and the lower substrate by DPC process electroplating. The application connects T and R components in z axis by electroplating copper dam, greatly saves space and cost on the plane, and electroplates copper column by DPC electroplating copper, limits the position of the electroplated copper column by dry film, so that the copper column can only be electroplated in the specified area, without mold positioning and high precision.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of ceramic-based microsystem integration shell, in particular to a 3D stacked ceramic packaging tube shell. BACKGROUND

[0002] The ceramic-based microsystem integration shell can integrate different electronic components, such as digital integrated circuits, RF integrated circuits, passive components, sensor antennas, etc., into a complete system, and can contain commonly used unit modules. The microsystem integration technology has the advantages of high packaging integration, good process compatibility, good electrical performance, low cost, and high reliability, and is widely used in aerospace and military electronic fields.

[0003] However, at present, the tube shell of the single HTCC is connected through a transmission line, and the TR transceiver assembly cannot be placed together in the single HTCC, and must be placed in two tube shells, so that when the TR transceiver assembly is packaged, two ceramics are used to package the T and R assemblies respectively, and the adapter line is used for connection on the assembly plane. Such products not only increase the cost of the adapter line, but also occupy a large area of space on the plane, resulting in a large overall assembly. SUMMARY

[0004] In view of the deficiencies of the prior art, the present application aims to provide a 3D stacked ceramic packaging tube shell.

[0005] In order to achieve the above-mentioned purpose, the technical scheme of the present application is as follows:

[0006] A 3D stacked ceramic packaging tube shell, comprising an upper substrate, a middle substrate and a lower substrate arranged in sequence from top to bottom, the upper substrate and the middle substrate are connected through a copper assembly one and form a receiving cavity one, the middle substrate and the lower substrate are connected through a copper assembly two and form a receiving cavity two, the receiving cavity one and the receiving cavity two respectively place T and R of the transceiver assembly, one end of the copper assembly one and the copper assembly two is respectively connected with the upper substrate and the lower substrate by DPC process electroplating, the other end of the copper assembly one and the copper assembly two is respectively welded on both sides of the middle substrate.

[0007] Preferably, the copper assembly one and the copper assembly two each include a copper dam for sealing welding and a copper column for signal connection.

[0008] Preferably, the precision deviation of the copper dam electroplated is not greater than 60um.

[0009] Preferably, the copper assembly one and the copper assembly two are each welded to the middle substrate by gold-tin solder.

[0010] Preferably, the upper substrate and the lower substrate are both arranged as substrates made by DPC thin film process.

[0011] Preferably, the upper substrate is arranged as a DPC aluminum nitride ceramic substrate.

[0012] Preferably, the lower substrate is arranged as a DPC aluminum oxide ceramic substrate.

[0013] Preferably, the middle substrate is arranged as an HTCC aluminum oxide ceramic substrate.

[0014] Compared with the prior art, the present application has the following beneficial effects:

[0015] 1. The present application connects T and R components on the z-axis by the way of electroplating copper dam, greatly saves the space and cost on the plane, and electroplates copper columns by the way of DPC electroplating copper, limits the position of the electroplated copper columns by dry film, so that the copper columns can only be electroplated in the specified area, without mold positioning and with high precision.

[0016] 2. The present application uses DPC aluminum nitride ceramic substrate, HTCC aluminum oxide ceramic substrate and DPC aluminum oxide ceramic substrate as upper, middle and lower circuit substrates respectively, uses thick and thin film printing technology, contains various microwave transmission structures, realizes isolation, air tightness and heat dissipation functions by electroplating copper, is used for microwave multi-chip modules, components and subsystems, is the current development trend of miniaturization and integration of electronic equipment, adopts substrate integrated integrated technology and three-dimensional packaging structure to meet the packaging requirements of systems and subsystems, and has compact structure and high integration. BRIEF DESCRIPTION OF DRAWINGS

[0017] The disclosure of the present application will be described with reference to the accompanying drawings. It should be understood that the drawings are only for the purpose of illustration and are not intended to limit the scope of protection of the present application, and in the drawings, the same reference signs are used to refer to the same parts. Among them:

[0018] Figure 1 is a schematic diagram of the overall structure of the present application;

[0019] Figure 2 is a schematic diagram of the structure of the upper substrate of the present application;

[0020] Figure 3 is a schematic diagram of the structure of the middle substrate of the present application Figure 1 ;

[0021] Figure 4 is a schematic diagram of the structure of the middle substrate of the present application Figure 2 ;

[0022] Figure 5 is a schematic diagram of the structure of the lower substrate of the present application.

[0023] The figure annotation description: 1, the upper substrate; 2, copper component one; 3, the middle substrate; 4, copper component two; 5, the lower substrate. DETAILED DESCRIPTION

[0024] It is easy to understand that according to the technical scheme of the present application, a person skilled in the art can propose a variety of structure modes and implementation modes that can be replaced with each other without changing the essential spirit of the present application. Therefore, the following specific embodiments and drawings are only exemplary description of the technical scheme of the present application, and should not be regarded as the whole or regarded as the limitation or restriction of the technical scheme of the present application.

[0025] As shown in Figure 1 As a ceramic package shell of a 3D stacking form of the present application, it comprises an upper substrate 1, a middle substrate 3 and a lower substrate 5, which are arranged in order from top to bottom, the upper substrate 1 is set as a DPC aluminum nitride ceramic substrate, the middle substrate 3 is set as an HTCC aluminum oxide ceramic substrate, and the lower substrate 5 is set as a DPC aluminum oxide ceramic substrate, the upper substrate 1 and the lower substrate 5 are both made by DPC thin film process, and the precision can reach 0.05mm, which is higher than the 0.1mm precision of ordinary HTCC thick film process, and the range of selection in design is larger, more high-frequency traces can be selected, and the performance is more stable, and at the same time, the HTCC aluminum oxide multilayer ceramic substrate of the middle substrate 3 can be used for multilayer wiring, the pad position of the front and back surfaces can be flexibly adjusted, and the position of the chip and various devices can be more flexibly adjusted, and the lower substrate 5 uses aluminum oxide ceramic substrate to save cost.

[0026] As shown in Figure 1 The upper substrate 1 and the middle substrate 3 are connected through copper component one 2, the middle substrate 3 and the lower substrate 5 are connected through copper component two 4, and as shown in Figures 2-5As shown, the copper assembly one 2 and the copper assembly two 4 are respectively connected with the upper substrate 1 and the lower substrate 5 through DPC process electroplating, and the other ends of the copper assembly one 2 and the copper assembly two 4 are respectively welded on the two sides of the middle substrate 3 through gold-tin solder, the copper assembly one 2 and the copper assembly two 4 both include copper dams for sealing welding and copper columns for signal connection, and the precision deviation of the electroplated copper dam is 50 um, which is generally smaller than the welding tolerance of mold positioning, greatly ensuring the overall performance, and the T and R components are connected in the z-axis through the electroplated copper dam, and the T and R are respectively placed between the upper substrate 1 and the middle substrate 3 and between the middle substrate 3 and the lower substrate 5, which not only effectively isolates TR, but also can connect the signal through the copper column, greatly saving the space and cost on the plane, the copper column is electroplated through the DPC electroplated copper, the position of the electroplated copper column is limited through the dry film, so that the copper column can only be electroplated in the specified area, without mold positioning and high precision, and the heat dissipation effect of copper is greater than that of the commonly used Kovar metal, and the heat dissipation can be better with the aluminum nitride substrate, the electroplated copper of the product has a certain height, leaving a certain space for chip installation, and the single copper column can transmit signals with other ceramic tubes.

[0027] In use, the copper assembly one 2 is electroplated on the bottom surface of the upper substrate 1 layer by layer through the DPC process, the copper assembly one 2 is welded with the front surface of the middle substrate 3 through gold-tin solder, the copper assembly two 4 is electroplated on the top surface of the lower substrate 5 layer by layer through the DPC process, and finally the back surface of the middle substrate 3 is welded with the copper assembly two 4 through gold-tin solder.

[0028] The DPC aluminum nitride ceramic substrate, the HTCC aluminum oxide ceramic substrate and the DPC aluminum oxide ceramic substrate are respectively used as the upper, middle and lower circuit substrates, the thick and thin film printing technology is used, the electroplated copper is used to realize the isolation, air tightness and heat dissipation functions, the substrate integrated integrated technology and the three-dimensional packaging structure can meet the packaging requirements of the system and the subsystem, and the structure is compact and the integration degree is high.

[0029] The technical scope of the present application is not limited to the content in the above description, and those skilled in the art can make various modifications and changes to the above embodiments without departing from the technical idea of the present application, and these modifications and changes should all belong to the protection scope of the present application.

Claims

1. A ceramic encapsulation shell in a 3D stacked form, characterized in that: The device includes an upper substrate (1), a middle substrate (3), and a lower substrate (5) arranged sequentially from top to bottom. The upper substrate (1) and the middle substrate (3) are connected by a copper component (2) to form a receiving cavity 1. The middle substrate (3) and the lower substrate (5) are connected by a copper component (4) to form a receiving cavity 2. The receiving cavity 1 and the receiving cavity 2 respectively contain transceiver components T and R. One end of the copper component (2) and the copper component (4) are respectively connected to the upper substrate (1) and the lower substrate (5) by DPC electroplating. The other end of the copper component (2) and the copper component (4) are respectively welded to both sides of the middle substrate (3). Both the copper component one (2) and the copper component two (4) include a copper dam for sealing welding and a copper pillar for signal connection; the precision deviation of the electroplated copper dam is no greater than 60um; The upper substrate (1) and the lower substrate (5) are both substrates made using DPC thin film technology. The upper substrate (1) is a DPC aluminum nitride ceramic substrate, the lower substrate (5) is a DPC alumina ceramic substrate, and the middle substrate (3) is an HTCC alumina ceramic substrate.

2. The ceramic encapsulation shell in a 3D stacked form according to claim 1, characterized in that: Both the copper component one (2) and the copper component two (4) are soldered to the intermediate substrate (3) using gold-tin solder.

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