A sensing and monitoring system based on zero-power micromachined switches

Abstract

A sensing and monitoring system based on a zero-power micromachined switch, which relates to a sensing and monitoring system. The present invention aims to solve the problems of short service life and high deployment cost of existing sensors. The present invention includes a substrate, a first contact electrode, a second contact electrode, a first thermosensitive mechanical arm, a second thermosensitive mechanical arm, a first infrared absorber, a second infrared absorber, a first contact probe and a second contact probe; an etching release area is provided in the middle of the upper surface of the substrate, the first infrared absorber and the second infrared absorber are arranged side by side in the etching release area, the first infrared absorber is connected to the first contact electrode through the first thermosensitive mechanical arm, the second infrared absorber is connected to the second contact electrode through the second thermosensitive mechanical arm, the first contact probe is arranged on the first infrared absorber, and the second contact probe is arranged on the second infrared absorber. The present invention belongs to the field of infrared sensing technology.

Description

Technical Field

[0001] The present invention relates to a sensing and monitoring system, belonging to the field of infrared sensing technology. Background Art

[0002] With the continuous progress of the Internet of Things revolution, the development of related intelligent sensing technologies has led to the emergence of billions of intelligent sensor nodes, which have greatly promoted the development of the industrial, agricultural, and environmental fields. At the same time, the significant energy consumption of intelligent sensing nodes has also imposed a major burden on the energy supply of sensors and environmental sustainability. Sensor nodes working in the wild often need to continuously supply power, which makes the battery the main factor limiting the lifespan of sensor nodes. Especially when detecting major events that occur at low frequencies, such as forest fires, gas leaks, etc. Since the sensor nodes need to continuously consume electrical energy, most of the battery energy is consumed before obtaining the signal of the major event. This fundamentally limits the deployment of wireless sensors. Therefore, there is an urgent need to design a sensor control method with near-zero power consumption to extend the service life of sensors and reduce the deployment and maintenance costs of sensing nodes. Summary of the Invention

[0003] In order to solve the problems of short service life and high deployment cost of existing sensors, the present invention further provides a sensing and monitoring system based on a zero-power microelectromechanical switch.

[0004] The technical solution adopted by the present invention to solve the above problems is: the sensing system of the present invention includes a substrate, a first contact electrode, a second contact electrode, a first thermosensitive mechanical arm, a second thermosensitive mechanical arm, a first infrared absorber, a second infrared absorber, a first contact probe, and a second contact probe;

[0005] An etching release area is provided in the middle of the upper surface of the substrate. The first infrared absorber and the second infrared absorber are arranged side by side in the etching release area. The first infrared absorber is connected to the first contact electrode through the first thermosensitive mechanical arm, the second infrared absorber is connected to the second contact electrode through the second thermosensitive mechanical arm, the first contact probe is arranged on the first infrared absorber, and the second contact probe is arranged on the second infrared absorber.

[0006] Further, the first contact electrode includes a first ground electrode, a first bias electrode, and a first control electrode;

[0007] The first ground electrode, the first bias electrode, and the first control electrode are sequentially arranged on the substrate from top to bottom, and the first ground electrode, the first bias electrode, and the first control electrode are all connected to the first thermosensitive mechanical arm.

[0008] Further, the second contact electrode includes a second ground electrode, a second bias electrode, and a second control electrode;

[0009] The second grounding electrode, the second biasing electrode, and the second control electrode are sequentially arranged on the substrate from top to bottom, and the second grounding electrode, the second biasing electrode, and the second control electrode are all connected to the second thermosensitive robotic arm.

[0010] Furthermore, the first thermosensitive robotic arm includes a first upper thermosensitive material, a first middle thermosensitive material, a first lower thermosensitive material, and a first bottom metal wiring layer;

[0011] The first upper thermosensitive material, the first middle thermosensitive material, the first lower thermosensitive material, and the first bottom metal wiring layer are sequentially stacked from top to bottom, and the first bottom metal wiring layer is connected to the first contact motor.

[0012] Furthermore, the second thermosensitive robotic arm includes a second upper thermosensitive material, a second middle thermosensitive material, a second lower thermosensitive material, and a second bottom metal wiring layer;

[0013] The second upper thermosensitive material, the second middle thermosensitive material, the second lower thermosensitive material, and the second bottom metal wiring layer are sequentially stacked from top to bottom, and the second bottom metal wiring layer is connected to the second contact electrode.

[0014] Furthermore, the first infrared absorber includes a first surface three-dimensional absorption metal array, a first intermediate dielectric layer, a first lower continuous metal layer, and a first bottom wiring metal layer;

[0015] The first surface three-dimensional absorption metal array, the first intermediate dielectric layer, the first lower continuous metal layer, and the first bottom wiring metal layer are sequentially stacked from top to bottom.

[0016] Furthermore, the second infrared absorber includes a second surface three-dimensional absorption metal array, a second intermediate dielectric layer, a second lower continuous metal layer, and a second bottom wiring metal layer;

[0017] The second surface three-dimensional absorption metal array, the second intermediate dielectric layer, the second lower continuous metal layer, and the second bottom wiring metal layer are sequentially stacked from top to bottom.

[0018] The monitoring system of the present invention includes an infrared control module and a load function module;

[0019] The infrared control module is used to control the load function module;

[0020] The infrared control module is composed of an impedance monitoring and zero-power infrared sensing system;

[0021] The load function module is composed of a transmitter, a monitor, and a sensor.

[0022] The beneficial effects of the present invention are:

[0023] 1. Compared with the prior art, the zero-power infrared sensor switch structure and manufacturing process adopted by the present invention are simpler, with higher sensitivity and reliability;

[0024] 2. The design of the present invention can adjust the monitoring distance for the target to be measured through the infrared control module according to the requirements of the transmitter, sensor, monitor, etc. for the monitoring target distance and monitoring field of view, improving the monitoring and recognition accuracy;

[0025] 3. The sensing and monitoring system of the zero-power micro-mechanical switch provided by the present invention can maintain near-zero power consumption in standby, greatly reducing the energy consumption of the monitoring system, extending the service life of the sensing and monitoring system, and remaining in a deployed and active state for many years without battery replacement. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a top view of the near-zero-power MEMS infrared detector of the present invention;

[0027] Figure 2 is a schematic diagram of the film layer structure of the first thermosensitive mechanical arm;

[0028] Figure 3 is a schematic diagram of the film layer structure of the second thermosensitive mechanical arm;

[0029] Figure 4 is a schematic diagram of the film layer structure of the first infrared absorber;

[0030] Figure 5 is a schematic diagram of the film layer structure of the second infrared absorber;

[0031] Figure 6 is a block diagram of the sensing and monitoring system of the zero-power micro-mechanical switch of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0032] DETAILED DESCRIPTION OF THE INVENTION I: As Figure 1 shown, a sensing system based on a zero-power micro-mechanical switch includes a substrate 1, a first contact electrode 3, a second contact electrode 4, a first thermosensitive mechanical arm 5, a second thermosensitive mechanical arm 6, a first infrared absorber 7, a second infrared absorber 8, a first contact probe 9 and a second contact probe 10;

[0033] An etching release area 2 is provided in the middle of the upper surface of the substrate 1. The first infrared absorber 7 and the second infrared absorber 8 are arranged side by side in the etching release area 2. The first infrared absorber 7 is connected to the first contact electrode 3 through the first thermosensitive mechanical arm 5, and the second infrared absorber 8 is connected to the second contact electrode 4 through the second thermosensitive mechanical arm 6. The first contact probe 9 is arranged on the first infrared absorber 7, and the second contact probe 10 is arranged on the second infrared absorber 8.

[0034] Among them, the first infrared absorber 7 and the second infrared absorber 8 have infrared absorption characteristics of more than 90% of the infrared energy in a specific band.

[0035] Specific Embodiment 2: As Figure 1 shown, on the basis of Specific Embodiment 1, the first contact electrode 3 includes a first ground electrode 3-1, a first bias electrode 3-2, and a first control electrode 3-3;

[0036] The first ground electrode 3-1, the first bias electrode 3-2, and the first control electrode 3-3 are sequentially arranged on the substrate 1 from top to bottom, and the first ground electrode 3-1, the first bias electrode 3-2, and the first control electrode 3-3 are all connected to the first thermosensitive robotic arm 5.

[0037] Specific Embodiment 3: As Figure 1 shown, on the basis of Specific Embodiment 1, the second contact electrode 4 includes a second ground electrode 4-1, a second bias electrode 4-2, and a second control electrode 4-3;

[0038] The second ground electrode 4-1, the second bias electrode 4-2, and the second control electrode 4-3 are sequentially arranged on the substrate 1 from top to bottom, and the second ground electrode 4-1, the second bias electrode 4-2, and the second control electrode 4-3 are all connected to the second thermosensitive robotic arm 6.

[0039] Specific Embodiment 4: As Figure 2 shown, on the basis of Specific Embodiment 1, the first thermosensitive robotic arm 5 includes a first upper thermosensitive material 5-1, a first middle thermosensitive material 5-2, a first lower thermosensitive material 5-3, and a first bottom metal wiring layer 5-4;

[0040] The first upper thermosensitive material 5-1, the first middle thermosensitive material 5-2, the first lower thermosensitive material 5-3, and the first bottom metal wiring layer 5-4 are sequentially stacked from top to bottom, and the first bottom metal wiring layer 5-4 is connected to the first contact motor 3.

[0041] Among them, the first upper thermosensitive material 5-1, the first middle thermosensitive material 5-2, and the first lower thermosensitive material 5-3 are respectively composed of three materials with different thermal conductivities.

[0042] Specific Embodiment 5: As Figure 3 shown, on the basis of Specific Embodiment 1, the second thermosensitive robotic arm 6 includes a second upper thermosensitive material 6-1, a second middle thermosensitive material 6-2, a second lower thermosensitive material 6-3, and a second bottom metal wiring layer 6-4;

[0043] The second upper thermal-sensitive material 6-1, the second middle thermal-sensitive material 6-2, the second lower thermal-sensitive material 6-3, and the second bottom metal wiring layer 6-4 are stacked in sequence from top to bottom, and the second bottom metal wiring layer 6-4 is connected to the second contact electrode 4.

[0044] Among them, the second upper thermal-sensitive material 6-1, the second middle thermal-sensitive material 6-2, and the second lower thermal-sensitive material 6-3 are respectively composed of three materials with different thermal conductivities, and the materials of the second upper thermal-sensitive material 6-1, the second middle thermal-sensitive material 6-2, and the second lower thermal-sensitive material 6-3 correspond one by one to the materials of the first upper thermal-sensitive material 5-1, the first middle thermal-sensitive material 5-2, and the first lower thermal-sensitive material 5-3.

[0045] Specific Embodiment Six: As Figure 4 shown, on the basis of Specific Embodiment One, the first infrared absorber 7 includes a first surface three-dimensional absorption metal array 7-1, a first intermediate dielectric layer 7-2, a first lower continuous metal layer 7-3, and a first bottom wiring metal layer 7-4;

[0046] The first surface three-dimensional absorption metal array 7-1, the first intermediate dielectric layer 7-2, the first lower continuous metal layer 7-3, and the first bottom wiring metal layer 7-4 are stacked in sequence from top to bottom.

[0047] Among them, the first surface three-dimensional absorption metal array 7-1 is composed of a periodic three-dimensional metal patterned array, the first intermediate dielectric layer 7-2 is composed of an insulating dielectric continuous flat structure, and the first lower continuous metal layer 7-3 is composed of a continuous metal flat structure.

[0048] Specific Embodiment Seven: As Figure 5 shown, on the basis of Specific Embodiment One, the second infrared absorber 8 includes a second surface three-dimensional absorption metal array 8-1, a second intermediate dielectric layer 8-2, a second lower continuous metal layer 8-3, and a second bottom wiring metal layer 8-4;

[0049] The second surface three-dimensional absorption metal array 8-1, the second intermediate dielectric layer 8-2, the second lower continuous metal layer 8-3, and the second bottom wiring metal layer 8-4 are stacked in sequence from top to bottom.

[0050] Among them, the second surface three-dimensional absorption metal array 8-1 is composed of a periodic three-dimensional metal patterned array different from the first surface three-dimensional absorption metal array 7-1, the second intermediate dielectric layer 8-2 is composed of an insulating dielectric continuous flat structure, and the second lower continuous metal layer 8-3 is composed of a continuous metal flat structure.

[0051] Specific Embodiment Eight: As Figure 6 shown, a monitoring system based on a zero-power micro-mechanical switch includes an infrared control module and a load function module;

[0052] The infrared control module is used to control the load function module;

[0053] The infrared control module consists of an impedance monitoring and zero-power infrared sensing system,

[0054] The load function module consists of a transmitter, a monitor, and a sensor.

[0055] The working principle of the sensing and monitoring system based on the zero-power microelectromechanical switch is as follows: First, through the surface absorption array distribution of the first infrared absorber 7 and the second infrared absorber 8, the infrared trigger band is set in advance, and the infrared trigger distance is set in advance through the impedance monitoring module. When the system is in the standby state, the zero-power infrared sensor is disconnected, and there is no energy consumption in the system, and the power consumption is zero. When the target is triggered, the infrared sensor switch closes, and the load function modules such as the control backend transmitter, monitor, and sensor are turned on to achieve sensing and monitoring of the target.

[0056] Working principle

[0057] The first infrared absorber 7 and the second infrared absorber 8 simultaneously receive infrared energy in different bands. When the received energy range is within the set band range, the infrared absorber can absorb the energy of a specific band, the first thermosensitive robotic arm 5 and the second thermosensitive robotic arm 6 are heated and bent, the first contact probe 9 and the second contact probe 10 come into contact, and the infrared switch is triggered.

[0058] The working principle of the infrared control module is to adjust the contact gap between the first contact probe 9 and the second contact probe 10 by controlling the voltage difference between the first contact electrode 3-3 and the second contact electrode 4-3 through the impedance monitoring module, so as to achieve the adjustment of the infrared detection distance for different targets. Among them, the impedance detection module judges the contact gap between the first contact probe 9 and the second contact probe 10 by detecting the resistance in the infrared sensor, and adjusts the resistance value in the infrared sensor by applying a voltage difference between the first contact electrode 3-3 and the second contact electrode 4-3, thereby changing the contact gap between the first contact probe 9 and the second contact probe 10. At the same time, this infrared control module also has another set of disconnection protection mechanisms. In order to prevent the contact gap between the first contact probe 9 and the second contact probe 10 from exceeding the maximum distance that can be controlled by applying a voltage difference between the first contact electrode 3-3 and the second contact electrode 4-3, when the contact gap between the first contact probe 9 and the second contact probe 10 is too large, the impedance monitor will heat the first bottom wiring module 7-4 and the second bottom wiring module 8-4 of the infrared absorber by biasing the first electrode 3-2 and the second bias point electrode 3-4, so as to achieve the adjustment and control of the contact gap.

[0059] The working principle of the sensing and monitoring system based on the zero-power MEMS switch is as follows: First, through the surface absorption array distribution of the first infrared absorber 7 and the second infrared absorber 8, the infrared trigger band is set in advance, and the infrared trigger distance is set in advance by the impedance monitoring module. When the system is in the standby state, the zero-power infrared sensor is disconnected, and there is no energy consumption in the system, and the power consumption is zero. When the target is triggered, the infrared sensor switch closes, controlling the load function modules such as the backend transmitter, monitor, and sensor to turn on, realizing the sensing and monitoring of the target.

[0060] The above are only the preferred embodiments of the present invention, and there is no limitation to the present invention in any form. Although the present invention has been disclosed above with the preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some changes or modifications to equivalent embodiments by using the disclosed technical content within the scope of the technical solution of the present invention. However, as long as it does not depart from the technical solution content of the present invention and is based on the technical essence of the present invention, any simple modification, equivalent replacement, and improvement of the above embodiments still fall within the protection scope of the technical solution of the present invention.

Claims

1. A sensing system based on a zero-power micromachined switch, characterized in that, It includes a substrate (1), a first contact electrode (3), a second contact electrode (4), a first thermosensitive robotic arm (5), a second thermosensitive robotic arm (6), a first infrared absorber (7), a second infrared absorber (8), a first contact probe (9) and a second contact probe (10); An etching release area (2) is provided in the middle of the upper surface of the substrate (1). The first infrared absorber (7) and the second infrared absorber (8) are arranged side by side in the etching release area (2). The first infrared absorber (7) is connected to the first contact electrode (3) through the first thermosensitive robotic arm (5), and the second infrared absorber (8) is connected to the second contact electrode (4) through the second thermosensitive robotic arm (6). The first contact probe (9) is arranged on the first infrared absorber (7), and the second contact probe (10) is arranged on the second infrared absorber (8); The first infrared absorber (7) includes a first surface three-dimensional absorption metal array (7-1), a first intermediate dielectric layer (7-2), a first lower continuous metal layer (7-3) and a first bottom wiring metal layer (7-4); The first surface three-dimensional absorption metal array (7-1), the first intermediate dielectric layer (7-2), the first lower continuous metal layer (7-3) and the first bottom wiring metal layer (7-4) are stacked in sequence from top to bottom; The second infrared absorber (8) includes a second surface three-dimensional absorption metal array (8-1), a second intermediate dielectric layer (8-2), a second lower continuous metal layer (8-3) and a second bottom wiring metal layer (8-4); The second surface three-dimensional absorption metal array (8-1), the second intermediate dielectric layer (8-2), the second lower continuous metal layer (8-3) and the second bottom wiring metal layer (8-4) are stacked in sequence from top to bottom.

2. The sensing system based on a zero-power micromachined switch according to claim 1, wherein The first contact electrode (3) includes a first ground electrode (3-1), a first bias electrode (3-2) and a first control electrode (3-3); The first ground electrode (3-1), the first bias electrode (3-2) and the first control electrode (3-3) are sequentially arranged on the substrate (1) from top to bottom, and the first ground electrode (3-1), the first bias electrode (3-2) and the first control electrode (3-3) are all connected to the first thermosensitive robotic arm (5).

3. A sensing system based on a zero-power micromachined switch according to claim 1, wherein The second contact electrode (4) includes a second ground electrode (4-1), a second bias electrode (4-2) and a second control electrode (4-3); The second ground electrode (4-1), the second bias electrode (4-2) and the second control electrode (4-3) are sequentially arranged on the substrate (1) from top to bottom, and the second ground electrode (4-1), the second bias electrode (4-2) and the second control electrode (4-3) are all connected to the second thermosensitive robotic arm (6).

4. A sensing system based on a zero-power micromachined switch according to claim 1, characterized in that, The first thermosensitive robotic arm (5) includes a first upper thermosensitive material (5-1), a first middle thermosensitive material (5-2), a first lower thermosensitive material (5-3) and a first bottom metal wiring layer (5-4); The first upper thermal-sensitive material (5-1), the first middle thermal-sensitive material (5-2), the first lower thermal-sensitive material (5-3) and the first bottom metal wiring layer (5-4) are sequentially stacked from top to bottom, and the first bottom metal wiring layer (5-4) is connected to the first contact electrode (3).

5. A sensing system based on a zero-power micromachined switch according to claim 1, characterized in that, The second thermal-sensitive robotic arm (6) includes a second upper thermal-sensitive material (6-1), a second middle thermal-sensitive material (6-2), a second lower thermal-sensitive material (6-3) and a second bottom metal wiring layer (6-4); The second upper thermal-sensitive material (6-1), the second middle thermal-sensitive material (6-2), the second lower thermal-sensitive material (6-3) and the second bottom metal wiring layer (6-4) are sequentially stacked from top to bottom, and the second bottom metal wiring layer (6-4) is connected to the second contact electrode (4).

6. A monitoring system based on a zero-power micromachined switch comprising the sensing system according to claims 1-5, characterized in that, It includes an infrared control module and a load function module; The infrared control module is used to control the load function module; The infrared control module consists of an impedance monitoring and zero-power infrared sensing system; The load function module consists of a transmitter, a monitor and a sensor.

Images