Crystal growth process heat management optimization method and system

Abstract

The invention relates to the technical field of crystal processing, in particular to a heat management optimization method and system in the crystal growth process. Comprising the following steps: constructing a plurality of heating subareas and a plurality of monitoring points according to crystal processing equipment parameters; generating a crystal expected growth curve according to the to-be-processed crystal parameters, and constructing a heating period, a growth period and a cooling period according to the crystal expected growth curve; sequentially setting control strategies of a heating period, a growth period and a cooling period; a plurality of heating sub-regions are constructed in crystal processing equipment, regional temperature control is carried out in the crystal growth process, it is guaranteed that a crystal solid-liquid interface is in a stable temperature field, the growth efficiency and quality of crystals are guaranteed, meanwhile, the remaining heating sub-regions are adjusted in a targeted mode, and the overall heat loss is reduced. According to the expected growth curve of the crystal, the control strategy in each period is set, the temperature control in the crystal processing equipment is improved, and the overall heat loss is reduced.

Description

Technical Field

[0001] The present application relates to the field of crystal processing technology, and in particular to a method and system for optimizing thermal management during a crystal growth process. Background Art

[0002] In crystal growth, temperature control is crucial, affecting important quality indicators such as crystal transparency, integrity, color, etc. At present, crystal growth furnaces generally use electric heating furnaces and graphite resistance heaters for heating according to different processes.

[0003] During the crystal growth process, the temperature field distribution and heat transfer in the single crystal furnace are always in a state of constant change due to factors such as the increase in crystal size, the reduction in silicon material, and the rise of the crucible. If the adjustment is not timely, the internal temperature field cannot be in a stable state, which will cause a lot of heat waste and interfere with the growth efficiency and quality of the crystal. Summary of the invention

[0004] The purpose of this application is: to solve the above-mentioned technical problems, this application provides a method and system for optimizing thermal management in a crystal growth process, aiming to improve the temperature control efficiency and reduce heat loss in the crystal production process.

[0005] In some embodiments of the present application, multiple heating sub-regions are constructed inside the crystal processing equipment. During the crystal growth process, temperature control is performed on a regional basis according to the real-time state of the crystal to ensure that the solid-liquid interface of the crystal is in a stable temperature field, thereby ensuring the growth efficiency and quality of the crystal. At the same time, targeted adjustments are made to the remaining heating sub-regions to reduce overall heat losses.

[0006] In some embodiments of the present application, a heating cycle, a growth cycle and a cooling cycle are constructed according to the processing crystal parameters, and the control strategy within each cycle is set according to the expected growth curve of the crystal. At the same time, the internal temperature is monitored in real time and the control strategy is dynamically corrected in time to improve the temperature control inside the crystal processing equipment and reduce the overall heat loss.

[0007] In some embodiments of the present application, a method for optimizing thermal management during crystal growth is provided, comprising: Constructing multiple heating sub-areas and multiple monitoring points according to crystal processing equipment parameters; Generate an expected crystal growth curve according to the parameters of the crystal to be processed, and construct a heating cycle, a growth cycle and a cooling cycle according to the expected crystal growth curve; Set the control strategies of heating cycle, growth cycle and cooling cycle in sequence; Among them, when establishing multiple heating sub-areas and multiple monitoring points, it includes: Set the heating sub-area sequence A, A=(a1, a2…ai…an), where ai is the i-th heating sub-area; n is the number of heating sub-areas; Set the monitoring point sequence B, B=(b1, b2…bi…bm), where bi is the i-th monitoring point; m is the number of monitoring points, and m>n.

[0008] In some embodiments of the present application, when setting the control strategy of the heating cycle, it includes: Set the heating rate and growth temperature according to the parameters of the crystal to be processed; The primary control strategy within the heating cycle is set according to the heating rate and the growth temperature; Generate a first-level expected temperature curve according to the heating rate, and set multiple first-level feedback time nodes within the heating cycle according to the first-level expected temperature curve; Obtain the temperature data of each monitoring point at the current first-level feedback time node; Generate the first-level temperature sequence T of the current first-level feedback time node, T=(t1, t2…ti…tm); where ti is the first-level temperature value of the i-th monitoring point at the current first-level feedback time node; Generate the temperature fluctuation value k of the current first-level feedback time node according to the first-level temperature series T; Preset temperature fluctuation value threshold K1; If k>K1, the current first-level feedback time node generates a first-level control instruction, and the first-level control strategy is corrected according to the first-level control instruction.

[0009] In some embodiments of the present application, when generating the temperature rise fluctuation value k of the current level feedback time node, it includes: ; Wherein, e1 is the preset first weight coefficient; e2 is the preset second weight coefficient; Q1 is the preset first fixed coefficient; Q2 is the preset second fixed coefficient; is the average value of all data in the first-level temperature series T; It is the expected temperature at the current first-level feedback time node generated according to the first-level expected temperature curve.

[0010] In some embodiments of the present application, when setting the control strategy of the growth cycle, it includes: Set multiple time intervals within the growth cycle according to the expected growth curve of the crystal; Establish a time interval sequence H, H = (h1, h2…hi…hr), where hi is the i-th time interval in the growth cycle; r is the number of time intervals in the growth cycle; Set sub-control strategies for each time interval according to the expected crystal growth curve; Set secondary control strategies within the growth cycle based on all sub-control strategies; Multiple monitoring time nodes are set during the growth cycle, and whether to modify the secondary control strategy is determined based on the preset monitoring time nodes.

[0011] In some embodiments of the present application, when setting the sub-control strategy for each time interval, it includes: According to the time interval sequence H, hi is set as the target time interval in sequence; The primary heating sub-region of the target time interval is set according to the expected growth curve of the crystal; Obtaining a first-level associated sub-region of a first-level heating sub-region according to a preset associated model; Set the expected temperature value d1' of the first-level heating sub-area; Set the expected temperature value d2' of the first-level associated sub-region of the first-level heating sub-region; Set the expected temperature value d3' of the non-first-level associated sub-region of the first-level heating sub-region; Generate a sub-control strategy for a target time interval according to the expected temperature value d1', the expected temperature value d2' and the expected temperature value d3'; Generate sub-control strategies for each time interval in turn.

[0012] In some embodiments of the present application, when determining whether to modify the secondary control strategy according to the preset monitoring time node, it includes: Obtain the temperature data of each monitoring point at the current monitoring time node and the actual crystal growth rate; Determine the target primary heating sub-area of ​​the current monitoring time according to the time interval of the current monitoring time node; Establish the secondary temperature series D1 of the target primary heating sub-area, D1=(d 11 , d 12 …d 1i …d 1m1 ), where d 1i is the secondary temperature value of the i-th monitoring point in the target primary heating sub-area at the current monitoring time node; m1 is the number of monitoring points in the target primary heating sub-area; Establish the secondary temperature series D2 of the first-level associated sub-region of the target first-level heating sub-region, D2=(d 21 , d 22 …d 2i …d 2m2 ), where d 2i is the secondary temperature value of the i-th monitoring point in the first-level associated sub-region of the target first-level heating sub-region at the current monitoring time node; m2 is the number of monitoring points in the first-level associated sub-region of the target first-level heating sub-region; Establish the secondary temperature series D3 of the non-primary associated sub-region of the target primary heating sub-region, D3=(d 31 , d 32 …d 3i …d 3m3 ), where d 3i is the secondary temperature value of the i-th monitoring point in the non-first-level associated sub-region of the target first-level heating sub-region at the current monitoring time node; m3 is the number of monitoring points in the non-first-level associated sub-region of the target first-level heating sub-region; Among them, m1+m2+m3=m; Generate a corrected evaluation value p of the current monitoring time node according to the secondary temperature value of each monitoring point; Preset the first modified evaluation value threshold P1; If p>P1, the current monitoring time node generates a first-level correction instruction, and the second-level control strategy within the growth cycle is corrected according to the first-level correction instruction.

[0013] In some embodiments of the present application, the generating of the modified evaluation value p of the current monitoring time node includes: J1= (d 1i -d1') 2 ; J2= (d 2i -d2') 2 ; J3= (d 3i -d3') 2 ; p=β*[e3*Q3*J1+e4*Q4*J2+e5*Q5*J3]; Among them, e3 is the preset third weight coefficient; e4 is the preset fourth weight coefficient; e5 is the preset fifth weight coefficient; Q3 is the preset third fixed coefficient; Q4 is the preset fourth fixed coefficient; Q5 is the preset fifth fixed coefficient; J1 is the first reference value; J2 is the second reference value; J3 is the third reference value; β is the compensation coefficient set based on the difference between the actual growth rate of the crystal at the current monitoring time node and the expected growth rate of the crystal.

[0014] In some embodiments of the present application, when setting the control strategy of the cooling cycle, it includes: Set the cooling rate according to the parameters of the crystal to be processed; Set the three-level control strategy within the cooling cycle according to the cooling rate; Generate a three-level expected temperature curve according to the cooling rate, and set multiple second-level feedback time nodes according to the three-level expected temperature curve; The temperature data of each monitoring point is obtained according to the preset secondary feedback time node, and it is determined whether to generate a secondary control instruction.

[0015] In some embodiments of the present application, a crystal growth process heat management optimization system is provided, comprising: A central control unit, used to construct multiple heating sub-areas and multiple monitoring points according to the parameters of the crystal processing equipment; A monitoring unit, comprising a plurality of monitoring submodules, wherein the monitoring submodules are arranged at monitoring points and are used to collect temperature data of the monitoring points; A heating unit, comprising a plurality of heating submodules, wherein a single heating submodule is used to control the real-time temperature in a single heating subregion; The central control unit comprises: A first processing module is used to generate an expected crystal growth curve according to the parameters of the crystal to be processed, and to construct a heating cycle, a growth cycle and a cooling cycle according to the expected crystal growth curve; The second processing module is used to set the control strategy of the heating unit in the heating cycle, the growth cycle and the cooling cycle; The third processing module is used to set the heating sub-area sequence A, A=(a1, a2…ai…an), where ai is the i-th heating sub-area; n is the number of heating sub-areas; The third processing module is also used to set a monitoring point sequence B, B=(b1, b2...bi...bm), where bi is the i-th monitoring point; m is the number of monitoring points, and m>n.

[0016] Compared with the prior art, the method and system for optimizing thermal management of a crystal growth process in the embodiment of the present application have the following beneficial effects: Multiple heating sub-areas are constructed inside the crystal processing equipment. During the crystal growth process, temperature control is performed on each area according to the real-time state of the crystal to ensure that the solid-liquid interface of the crystal is in a stable temperature field, thereby ensuring the growth efficiency and quality of the crystal. At the same time, targeted adjustments are made to the remaining heating sub-areas to reduce overall heat loss.

[0017] According to the processing crystal parameters, the heating cycle, growth cycle and cooling cycle are constructed, and the control strategy for each cycle is set according to the expected growth curve of the crystal. At the same time, the internal temperature is monitored in real time and the control strategy is dynamically corrected in time to improve the temperature control inside the crystal processing equipment and reduce the overall heat loss. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a flow chart of a method and system for optimizing thermal management during crystal growth in an embodiment of the present application. DETAILED DESCRIPTION

[0019] The specific implementation methods of the present application are further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present application but are not intended to limit the scope of the present application.

[0020] In the description of the present application, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0021] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0022] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0023] like Figure 1 As shown, a method for optimizing thermal management of a crystal growth process according to an embodiment of the present application includes: S101: constructing multiple heating sub-areas and multiple monitoring points according to crystal processing equipment parameters; S102: generating an expected crystal growth curve according to the parameters of the crystal to be processed, and constructing a heating cycle, a growth cycle and a cooling cycle according to the expected crystal growth curve; S103: setting control strategies for a heating cycle, a growth cycle and a cooling cycle in sequence; Among them, when establishing multiple heating sub-areas and multiple monitoring points, it includes: Set the heating sub-area sequence A, A=(a1, a2…ai…an), where ai is the i-th heating sub-area; n is the number of heating sub-areas; Set the monitoring point sequence B, B=(b1, b2…bi…bm), where bi is the i-th monitoring point; m is the number of monitoring points, and m>n.

[0024] Specifically, according to the internal structural parameters of the crystal processing equipment, its internal space is divided to construct multiple heating sub-areas, and multiple monitoring points are arranged. Temperature monitoring equipment such as thermocouples and infrared thermometers are set at the monitoring points to collect the real-time temperature of each monitoring point, so as to monitor the temperature field inside the crystal processing equipment in real time.

[0025] Specifically, through the modular design of the heating unit, the temperature in each processing sub-area can be controlled in a targeted manner, and the temperature can be precisely adjusted by adjusting the load current of each heating sub-module.

[0026] Specifically, each single heating sub-area corresponds to a plurality of monitoring points, and the temperature field within the single heating sub-area can be constructed by collecting the temperature data of the monitoring points within the heating sub-area.

[0027] Specifically, according to the parameters of the crystal to be processed, the corresponding heating time, growth time and cooling time are set, so as to construct a heating cycle, a growth cycle and a cooling cycle. During the heating cycle, the crystal to be processed is heated and crystallized, during the growth cycle, it is cooled and crystallized, and during the cooling cycle, the temperature inside the crystal processing equipment is reduced to room temperature.

[0028] In the embodiment of the present application, when setting the control strategy of the heating cycle, it includes: Set the heating rate and growth temperature according to the parameters of the crystal to be processed; The primary control strategy within the heating cycle is set according to the heating rate and the growth temperature; Generate a first-level expected temperature curve according to the heating rate, and set multiple first-level feedback time nodes within the heating cycle according to the first-level expected temperature curve; Obtain the temperature data of each monitoring point at the current first-level feedback time node; Generate the first-level temperature sequence T of the current first-level feedback time node, T=(t1, t2…ti…tm); where ti is the first-level temperature value of the i-th monitoring point at the current first-level feedback time node; Generate the temperature fluctuation value k of the current first-level feedback time node according to the first-level temperature series T; Preset temperature fluctuation value threshold K1; If k>K1, the current first-level feedback time node generates a first-level control instruction, and the first-level control strategy is corrected according to the first-level control instruction.

[0029] Specifically, when generating the temperature rise fluctuation value k of the current first-level feedback time node, it includes: ; Wherein, e1 is the preset first weight coefficient; e2 is the preset second weight coefficient; Q1 is the preset first fixed coefficient; Q2 is the preset second fixed coefficient; is the average value of all data in the first-level temperature series T; It is the expected temperature at the current first-level feedback time node generated according to the first-level expected temperature curve.

[0030] Specifically, by presetting the first fixed coefficient and the second fixed coefficient, each parameter in the model is normalized so that each parameter is in the same value range.

[0031] Specifically, the optimal heating rate and growth temperature are set according to the parameters of the crystal to be processed, thereby setting the corresponding primary control strategy, and according to the primary control strategy, the temperature inside the crystal processing equipment is raised to the growth temperature during the heating cycle. The growth temperature refers to the optimal temperature required to melt the crystal.

[0032] Specifically, by periodically collecting temperature data from each monitoring point, it is determined whether the internal temperature of the crystal processing equipment is in a stable state. The larger the temperature fluctuation value, the more unstable the current temperature rise process is. When the temperature fluctuation value exceeds the threshold, the first-level control strategy is corrected according to the first-level control instruction, and the working parameters of the corresponding heating unit are adjusted to ensure the stability of the internal temperature field of the crystal processing equipment and improve the efficiency of crystal production and processing.

[0033] It can be understood that in the above embodiments, a heating cycle, a growth cycle and a cooling cycle are constructed according to the processing crystal parameters, and the control strategy within each cycle is set according to the expected growth curve of the crystal. At the same time, the internal temperature is monitored in real time and the control strategy is dynamically corrected in time to improve the temperature control inside the crystal processing equipment and reduce the overall heat loss.

[0034] In the embodiment of the present application, when setting the control strategy of the growth cycle, it includes: Set multiple time intervals within the growth cycle according to the expected growth curve of the crystal; Establish a time interval sequence H, H = (h1, h2…hi…hr), where hi is the i-th time interval in the growth cycle; r is the number of time intervals in the growth cycle; Set sub-control strategies for each time interval according to the expected crystal growth curve; Set secondary control strategies within the growth cycle based on all sub-control strategies; Multiple monitoring time nodes are set during the growth cycle, and whether to modify the secondary control strategy is determined based on the preset monitoring time nodes.

[0035] Specifically, the entire process of crystal growth is divided according to the expected growth curve of the crystal. Multiple time intervals are constructed based on factors such as the increase in crystal size, the reduction in silicon material, and the rise of the crucible during the growth process. The temperature field inside the crystal processing equipment is adjusted in a targeted manner according to the actual parameters in different time intervals, thereby ensuring the growth quality and efficiency of the crystal.

[0036] Specifically, when setting the sub-control strategy for each time interval, it includes: According to the time interval sequence H, hi is set as the target time interval in sequence; The primary heating sub-region of the target time interval is set according to the expected growth curve of the crystal; Obtaining a first-level associated sub-region of a first-level heating sub-region according to a preset associated model; Set the expected temperature value d1' of the first-level heating sub-area; Set the expected temperature value d2' of the first-level associated sub-region of the first-level heating sub-region; Set the expected temperature value d3' of the non-first-level associated sub-region of the first-level heating sub-region; Generate a sub-control strategy for a target time interval according to the expected temperature value d1', the expected temperature value d2' and the expected temperature value d3'; Generate sub-control strategies for each time interval in turn.

[0037] Specifically, the first-level heating sub-region refers to the heating sub-region where the solid-liquid interface is located within the current time interval, and the expected temperature value d1' is set according to the optimal crystallization temperature. The first-level associated sub-region refers to each first-level heating sub-region adjacent to the first-level heating sub-region. The temperature in the region may fluctuate slightly, and the corresponding first-level safety temperature difference is set according to historical data to generate the expected temperature value d2'; the remaining area is a non-first-level associated sub-region, and the corresponding second-level safety temperature difference is set according to historical data to generate the expected temperature value d3'; the first-level safety temperature difference is smaller than the second-level safety temperature difference, and the heat loss is reduced by adjusting the gradient of the internal temperature field to ensure the overall stability and crystal growth efficiency.

[0038] Specifically, when judging whether to modify the secondary control strategy according to the preset monitoring time node, it includes: Obtain the temperature data of each monitoring point at the current monitoring time node and the actual crystal growth rate; Determine the target primary heating sub-area of ​​the current monitoring time according to the time interval of the current monitoring time node; Establish the secondary temperature series D1 of the target primary heating sub-area, D1=(d 11 , d 12 …d 1i …d 1m1), where d 1i is the secondary temperature value of the i-th monitoring point in the target primary heating sub-area at the current monitoring time node; m1 is the number of monitoring points in the target primary heating sub-area; Establish the secondary temperature series D2 of the first-level associated sub-region of the target first-level heating sub-region, D2=(d 21 , d 22 …d 2i …d 2m2 ), where d 2i is the secondary temperature value of the i-th monitoring point in the first-level associated sub-region of the target first-level heating sub-region at the current monitoring time node; m2 is the number of monitoring points in the first-level associated sub-region of the target first-level heating sub-region; Establish the secondary temperature series D3 of the non-primary associated sub-region of the target primary heating sub-region, D3=(d 31 , d 32 …d 3i …d 3m3 ), where d 3i is the secondary temperature value of the i-th monitoring point in the non-first-level associated sub-region of the target first-level heating sub-region at the current monitoring time node; m3 is the number of monitoring points in the non-first-level associated sub-region of the target first-level heating sub-region; Among them, m1+m2+m3=m; Generate a corrected evaluation value p of the current monitoring time node according to the secondary temperature value of each monitoring point; Preset the first modified evaluation value threshold P1; If p>P1, the current monitoring time node generates a first-level correction instruction, and the second-level control strategy within the growth cycle is corrected according to the first-level correction instruction.

[0039] Specifically, when generating the modified evaluation value p of the current monitoring time node, it includes: J1= (d 1i -d1') 2 ; J2= (d 2i -d2') 2 ; J3= (d 3i -d3') 2 ; p=β*[e3*Q3*J1+e4*Q4*J2+e5*Q5*J3]; Among them, e3 is the preset third weight coefficient; e4 is the preset fourth weight coefficient; e5 is the preset fifth weight coefficient; Q3 is the preset third fixed coefficient; Q4 is the preset fourth fixed coefficient; Q5 is the preset fifth fixed coefficient; J1 is the first reference value; J2 is the second reference value; J3 is the third reference value; β is the compensation coefficient set based on the difference between the actual growth rate of the crystal at the current monitoring time node and the expected growth rate of the crystal.

[0040] Specifically, in the above embodiment, each parameter in the model is normalized by presetting the third fixed coefficient, the fourth fixed coefficient and the fifth fixed coefficient, so that each parameter is within the same value range.

[0041] Specifically, the larger the corrected evaluation value p is, the more unstable the temperature field inside the current crystal processing equipment is, and timely adjustments are required to avoid problems in crystal growth.

[0042] It can be understood that in the above embodiment, multiple heating sub-areas are constructed inside the crystal processing equipment. During the crystal growth process, temperature control is performed on a regional basis according to the real-time state of the crystal to ensure that the solid-liquid interface of the crystal is in a stable temperature field, thereby ensuring the growth efficiency and quality of the crystal. At the same time, targeted adjustments are made to the remaining heating sub-areas to reduce overall heat losses.

[0043] In the embodiment of the present application, when setting the control strategy of the cooling cycle, it includes: Set the cooling rate according to the parameters of the crystal to be processed; Set the three-level control strategy within the cooling cycle according to the cooling rate; Generate a three-level expected temperature curve according to the cooling rate, and set multiple second-level feedback time nodes according to the three-level expected temperature curve; The temperature data of each monitoring point is obtained according to the preset secondary feedback time node, and it is determined whether to generate a secondary control instruction.

[0044] Specifically, a three-level control strategy is generated according to the cooling rate, and the temperature inside the crystal processing equipment is reduced to room temperature within the cooling cycle according to the three-level control strategy to complete the crystal production.

[0045] Based on another embodiment of a method for optimizing thermal management of a crystal growth process in any of the above embodiments, this embodiment provides a system for optimizing thermal management of a crystal growth process, including: A central control unit, used to construct multiple heating sub-areas and multiple monitoring points according to the parameters of the crystal processing equipment; A monitoring unit, comprising a plurality of monitoring submodules, wherein the monitoring submodules are arranged at monitoring points and are used to collect temperature data of the monitoring points; A heating unit, comprising a plurality of heating submodules, wherein a single heating submodule is used to control the real-time temperature in a single heating subregion; Specifically, the monitoring unit is preferably a temperature monitoring device such as a thermocouple and an infrared thermometer, and the heating submodule is preferably a DC electronic load temperature control device. Each heating submodule can be controlled individually, and the temperature inside the crystal processing equipment is controlled through all the heating submodules.

[0046] The central control unit includes: A first processing module is used to generate an expected crystal growth curve according to the parameters of the crystal to be processed, and to construct a heating cycle, a growth cycle and a cooling cycle according to the expected crystal growth curve; The second processing module is used to set the control strategy of the heating unit in the heating cycle, the growth cycle and the cooling cycle; The third processing module is used to set the heating sub-area sequence A, A=(a1, a2…ai…an), where ai is the i-th heating sub-area; n is the number of heating sub-areas; The third processing module is also used to set a monitoring point sequence B, B=(b1, b2...bi...bm), where bi is the ith monitoring point; m is the number of monitoring points, and m>n.

[0047] According to the first concept of the present application, multiple heating sub-areas are constructed inside the crystal processing equipment. During the crystal growth process, temperature control is performed on a regional basis according to the real-time state of the crystal to ensure that the solid-liquid interface of the crystal is in a stable temperature field, thereby ensuring the growth efficiency and quality of the crystal. At the same time, targeted adjustments are made to the remaining heating sub-areas to reduce overall heat losses.

[0048] According to the second concept of the present application, a heating cycle, a growth cycle and a cooling cycle are constructed according to the processing crystal parameters, and the control strategy within each cycle is set according to the expected growth curve of the crystal. At the same time, the internal temperature is monitored in real time and the control strategy is dynamically corrected in time to improve the temperature control inside the crystal processing equipment and reduce the overall heat loss.

[0049] The above is only a preferred implementation of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and substitutions can be made without departing from the technical principles of the present application. These improvements and substitutions should also be regarded as the scope of protection of the present application.

Claims

1. A method for optimizing thermal management during crystal growth, characterized in that: include: Constructing multiple heating sub-areas and multiple monitoring points according to crystal processing equipment parameters; Generate an expected crystal growth curve according to the parameters of the crystal to be processed, and construct a heating cycle, a growth cycle and a cooling cycle according to the expected crystal growth curve; Set the control strategies of heating cycle, growth cycle and cooling cycle in sequence; Among them, when establishing multiple heating sub-areas and multiple monitoring points, it includes: Set the heating sub-area sequence A, A=(a1, a2…ai…an), where ai is the i-th heating sub-area; n is the number of heating sub-areas; Set the monitoring point sequence B, B=(b1, b2…bi…bm), where bi is the i-th monitoring point; m is the number of monitoring points, and m>n.

2. The method for optimizing thermal management during crystal growth according to claim 1, characterized in that: When setting the control strategy for the heating cycle, include: Set the heating rate and growth temperature according to the parameters of the crystal to be processed; The primary control strategy within the heating cycle is set according to the heating rate and the growth temperature; Generate a first-level expected temperature curve according to the heating rate, and set multiple first-level feedback time nodes within the heating cycle according to the first-level expected temperature curve; Obtain the temperature data of each monitoring point at the current first-level feedback time node; Generate the first-level temperature sequence T of the current first-level feedback time node, T=(t1, t2…ti…tm); where ti is the first-level temperature value of the i-th monitoring point at the current first-level feedback time node; Generate the temperature fluctuation value k of the current first-level feedback time node according to the first-level temperature series T; Preset temperature fluctuation value threshold K1; If k>K1, the current first-level feedback time node generates a first-level control instruction, and the first-level control strategy is corrected according to the first-level control instruction.

3. The method for optimizing thermal management during crystal growth according to claim 2, characterized in that: When generating the temperature rise fluctuation value k of the current first-level feedback time node, it includes: ； Among them, e1 is the preset first weight coefficient; e2 is the preset second weight coefficient; Q1 is the preset first fixed coefficient; Q2 is the preset second fixed coefficient; is the average value of all data in the first-level temperature series T; It is the expected temperature at the current first-level feedback time node generated according to the first-level expected temperature curve.

4. The method for optimizing thermal management during crystal growth process according to claim 2, characterized in that: When setting a control strategy for the growth cycle, include: Set multiple time intervals within the growth cycle according to the expected growth curve of the crystal; Establish a time interval sequence H, H = (h1, h2…hi…hr), where hi is the i-th time interval in the growth cycle; r is the number of time intervals in the growth cycle; Set sub-control strategies for each time interval according to the expected crystal growth curve; Set secondary control strategies within the growth cycle based on all sub-control strategies; Multiple monitoring time nodes are set during the growth cycle, and whether to modify the secondary control strategy is determined based on the preset monitoring time nodes.

5. The method for optimizing thermal management during crystal growth according to claim 4, characterized in that: When setting the sub-control strategy for each time interval, include: According to the time interval sequence H, hi is set as the target time interval in sequence; The primary heating sub-region of the target time interval is set according to the expected growth curve of the crystal; Obtaining a first-level associated sub-region of a first-level heating sub-region according to a preset associated model; Set the expected temperature value d1' of the first-level heating sub-area; Set the expected temperature value d2' of the first-level associated sub-region of the first-level heating sub-region; Set the expected temperature value d3' of the non-first-level associated sub-region of the first-level heating sub-region; Generate a sub-control strategy for a target time interval according to the expected temperature value d1', the expected temperature value d2' and the expected temperature value d3'; Generate sub-control strategies for each time interval in turn.

6. The method for optimizing thermal management during crystal growth according to claim 5, characterized in that: When judging whether to modify the secondary control strategy according to the preset monitoring time node, it includes: Obtain the temperature data of each monitoring point at the current monitoring time node and the actual crystal growth rate; Determine the target primary heating sub-area of ​​the current monitoring time according to the time interval of the current monitoring time node; Establish the secondary temperature series D1 of the target primary heating sub-area, D1=(d 11 , d 12 …d 1i …d 1m1 ), where d 1i is the secondary temperature value of the i-th monitoring point in the target primary heating sub-area at the current monitoring time node; m1 is the number of monitoring points in the target primary heating sub-area; Establish the secondary temperature series D2 of the first-level associated sub-region of the target first-level heating sub-region, D2=(d 21 , d 22 …d 2i …d 2m2 ), where d 2i is the secondary temperature value of the i-th monitoring point in the first-level associated sub-region of the target first-level heating sub-region at the current monitoring time node; m2 is the number of monitoring points in the first-level associated sub-region of the target first-level heating sub-region; Establish the secondary temperature series D3 of the non-primary associated sub-region of the target primary heating sub-region, D3=(d 31 , d 32 …d 3i …d 3m3 ), where d 3i is the secondary temperature value of the i-th monitoring point in the non-first-level associated sub-region of the target first-level heating sub-region at the current monitoring time node; m3 is the number of monitoring points in the non-first-level associated sub-region of the target first-level heating sub-region; Among them, m1+m2+m3=m; Generate a corrected evaluation value p of the current monitoring time node according to the secondary temperature value of each monitoring point; Preset the first modified evaluation value threshold P1; If p>P1, the current monitoring time node generates a first-level correction instruction, and the second-level control strategy within the growth cycle is corrected according to the first-level correction instruction.

7. The method for optimizing thermal management during crystal growth according to claim 6, wherein: The generating of the corrected evaluation value p of the current monitoring time node includes: J1= (d 1i -d1') 2 ; J2= (d 2i -d2') 2 ; J3= (d 3i -d3') 2 4 p=β*[e3*Q3*J1+e4*Q4*J2+e5*Q5*J3]; Among them, e3 is the preset third weight coefficient; e4 is the preset fourth weight coefficient; e5 is the preset fifth weight coefficient; Q3 is the preset third fixed coefficient; Q4 is the preset fourth fixed coefficient; Q5 is the preset fifth fixed coefficient; J1 is the first reference value; J2 is the second reference value; J3 is the third reference value; β is the compensation coefficient set based on the difference between the actual growth rate of the crystal at the current monitoring time node and the expected growth rate of the crystal.

8. The method for optimizing thermal management during crystal growth according to claim 4, wherein: When setting the control strategy for the cooling cycle, include: Set the cooling rate according to the parameters of the crystal to be processed; Set the three-level control strategy within the cooling cycle according to the cooling rate; Generate a three-level expected temperature curve according to the cooling rate, and set multiple second-level feedback time nodes according to the three-level expected temperature curve; The temperature data of each monitoring point is obtained according to the preset secondary feedback time node, and it is determined whether to generate a secondary control instruction.

9. A crystal growth process heat management optimization system, using the crystal growth process heat management optimization method according to any one of claims 1 to 8, characterized in that: include: A central control unit, used to construct multiple heating sub-areas and multiple monitoring points according to the parameters of the crystal processing equipment; A monitoring unit, comprising a plurality of monitoring submodules, wherein the monitoring submodules are arranged at monitoring points and are used to collect temperature data of the monitoring points; A heating unit, comprising a plurality of heating submodules, wherein a single heating submodule is used to control the real-time temperature in a single heating subregion; The central control unit comprises: A first processing module is used to generate an expected crystal growth curve according to the parameters of the crystal to be processed, and to construct a heating cycle, a growth cycle and a cooling cycle according to the expected crystal growth curve; The second processing module is used to set the control strategy of the heating unit in the heating cycle, the growth cycle and the cooling cycle; The third processing module is used to set the heating sub-area sequence A, A=(a1, a2…ai…an), where ai is the i-th heating sub-area; n is the number of heating sub-areas; The third processing module is also used to set a monitoring point sequence B, B=(b1, b2...bi...bm), where bi is the i-th monitoring point; m is the number of monitoring points, and m>n.

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