155results about How to "Guaranteed growth quality" patented technology

The invention relates to a method for growing crystal by reducing atmosphere Kyropoulos method; the method is characterized in that on the basis of growing crystal by induction heating pulling method, a tungsten, or molybdenum, or tungsten molybdenum alloy crucible is used; graphite felt which is arranged outside the crucible is used as a heat insulator; the reducing atmosphere is formed at high temperature; a hard graphite felt heat cover or a zirconia brick heat cover combined with a tungsten molybdenum after heater are placed above the crucible to preserve heat for fused mass in the crucible and the crystal grows; an observation window is arranged at the upper cover of the heat cover and the upper side of a furnace wall to ensure uniformity and symmetry of temperature field and temperature gradient distribution; the observation window arranged at the upper cover of the heat cover and the upper side of the furnace wall are used to observe the fused mass and the conventional pulling method is used to carry out parallel shouldering on inoculating crystal; then power is reduced at a certain speed, meanwhile, the crystal can be slightly pulled or not pulled, that is the Kyropoulos method; after crystallization is over, power is continued to be reduced to lower the temperature of the crystal. With the method of the invention adopted, large-size and high-quality crystal can be grown at low cost.

The invention relates to the technical field of substrates, in particular to Anthurium substrate. The Anthurium substrate comprises, by weight percent, 45-50% of peat soil, 49.5-55% of urban organic waste, 0.2-0.6% of perlite, and 0.005-0.02% of bactericide. The urban organic waste is mixture of domestic sludge, mushroom residue, and compost of dry branches and fallen leaves. The bactericide is sodium p(dimethylamino)benzenediazo sulfonate. The components add up to 100% by weight. Cost in planting Anthurium can be effectively reduced by using the Anthurium substrate, water and fertilizer retention is improved, quality of Anthurium is improved, and disease and insect resistance of Anthurium is improved.

The invention provides a nitride high-voltage device on silicon substrate and a manufacturing method thereof. According to the nitride high-voltage device on the silicon substrate, a high-voltage tolerance layer is led into a drain electrode region, and the thickness of a partial epitaxial layer is thickened to bear higher voltage reduction, so that high punch through voltage resistant device is achieved. Via the method of partial generation, the high punch through voltage resistant device is achieved, the problems of warping and chap of nitride epitaxial layer, which are caused by a whole material with over thickness, are avoided, therefore, material generation quality is ensured, material generation efficiency is improved, and the cost is lowered.

The invention relates to the field of growth of monocrystalline diamonds through a microwave plasma chemical vapor deposition method and in particular relates to a gradient monocrystalline diamond anda preparation method thereof. Microwave plasma chemical vapor deposition equipment is adopted and high-purity air is introduced in a hydrogen and methane mixed gas source according to a continuous gradient concentration, so as to realize alternating deposition of a high-quality monocrystalline diamond layer without nitrogen and a nitrogen-containing diamond layer; then the gradient monocrystalline diamond with high quality, high strength and good toughness is prepared.

The invention discloses a multifunctional rape transplanter. The multifunctional rape transplanter comprises a vehicle frame and a trailer frame, wherein the trailer frame is mounted at the rear side of the vehicle frame, an operating system, a traveling system, a fertilizing system, a watering system, a pot seedling tray rack and a box moving system are mounted on the vehicle frame, a rotary-tillage furrowing system, a hole digging system, a seedling pulling, conveying and falling device and a soil covering and compacting system are mounted on the trailer frame, the rotary-tillage furrowing system, the hole digging system and the soil covering and compacting system are sequentially mounted from front to back, a seedling guide cup of the seedling pulling, conveying and falling device is arranged between the hole digging system and the soil covering and compacting system, the fertilizing port of the fertilizing system is arranged at the front side of the rotary-tillage furrowing system, the water outlet of the watering system is arranged at the rear side of the soil covering and compacting system, and the pot seedling tray rack is connected with the pot seedling outlet of the box moving system and the entrance of the seedling pulling, conveying and falling device. The multifunctional rape transplanter is simple in structure, convenient in use, simple to process and manufacture and good in economical efficiency.

The invention discloses a polysilicon growth ingot furnace. The polysilicon growth ingot furnace is provided with an upper furnace body and a lower furnace body, the upper furnace body is fixed at the upper part of a stand, the lower furnace body is arranged at the lower part of the stand through an opening device, a fixed upper heating chamber is arranged in the upper furnace body, a bearing plate buckled with four walls of the upper heating chamber is arranged at the lower side of a heat conduction plate, a hole is arranged in the centre of the lower furnace body, the hole part is provided with a lower heat field container, the lower heat field container is provided with a container wall with a separate circulating cooling system, a silicon liquid overflow container is arranged in the lower heat field container, and the lower end of the lower heat field container is connected with a container wall of the lower heat field container through a lifting device. Surrounding heating bodies, the upper heating body, the lower heating body, the upper heating field and the lower heating field are separately controlled to realize that gradients of the upper heating field and the lower heating field are conveniently operated so as to carry out directional solidification to produce large-scale polysilicon ingots. The silicon liquid overflow container can effectively prevent a silicon liquid from damaging the furnace body after the overflow of silicon liquid caused by cracking a crucible or other reasons, therefore, the invention has safe and reliable production .

The invention discloses a special microorganism compound fertilizer for the reproduction and growth period of rice, and relates to a fertilizer which is made from the following materials: urea, ammonium sulfate, ammonium dihydrogen phosphate, potassium sulfate, magnesium sulfate, calcium nitrate, zinc chloride, copper chloride, manganese sulfate, ferric sulfate, ferrous sulfate, sodium molybdate, boric acid, decomposed farmyard manure, animal viscera leftovers, fermented rapeseed meal, corn straws, filler and a microbial agent. The special microorganism compound fertilizer can effectively improve the ratio of content of each element in the soil, can well fit with the nutrition demand law of the reproduction and growth period of the rice, and can ensure the growth quality of the rice in the reproduction and growth period, the material utilization rate of the fertilizer is enhanced, the rice grain quality is improved, and the special microorganism compound fertilizer has very good promotion use value.

The invention provides a storage structure and a forming method thereof, wherein the storage structure comprises a substrate, a plurality of channel structures formed on the substrate, and a plurality of grid structures matched with the channel structures mutually, wherein each channel structure comprises multiple single crystal semiconductor layers and multiple oxide layers, which are alternatively stacked on the direction vertical to the substrate, at least one oxide layer is a single crystal oxide layer, and each grid structure comprises a grid dielectric layer adjacent to the channel structures and a grid layer adjacent to the grid dielectric layer. The storage structure has the advantages of simple preparation process, low cost, high reading-writing speed and high storage density.

The invention discloses a gas inflowing and cooling device for MOCVD equipment. The gas inflowing and cooling device is provided with spray heads located at the top of the interior of a reaction chamber, gas inflowing guide pipes for organic metal gas are arranged in gas inlets for isolation gas in a penetrating mode, the isolation gas can form curtain-shaped gas flow and surround the periphery of the organic metal gas, and therefore the organic metal gas which is sprayed just now and hydride gas can be isolated and prevented from untimely reacting to generate parasitic particles. In addition, the parasitic particles can be prevented from being formed nearby the gas inlets formed in the bottom face of the gas inflowing device, therefore, the conveyed organic metal gas and the hydride gas can be evenly distributed on a base and all substrates, the thin film growth quality is guaranteed, and the thin film growth rate is improved.

The invention relates to an InP based long wavelength 2-3mum quasi-quantum dot laser structure. The laser structure comprises a substrate, a lower cladding, a lower waveguide layer, a matching or tensile strain structural layer with a period of 1-20, an upper waveguide layer, an upper cladding, an ohmic contact layer, an upper electrode and a lower electrode, wherein the lower cladding layer is manufactured on the substrate; the lower waveguide layer is manufactured on the lower cladding and used as a carrier limit layer for improving the electron-hole composite efficiency and the working temperature of the laser; the matching or tensile strain structural layer is manufactured on the lower waveguide layer and used as an active region of the laser and is a core part of the laser; the upper waveguide layer is manufactured on the matching or tensile strain structural layer with a period of 1-20 and used as a carrier limit layer for limiting carriers in the active region so as to increase the electron-hole composite efficiency and the working temperature of the laser; the upper cladding layer is manufactured on the upper waveguide layer; the ohmic contact layer is manufactured on the upper cladding, and the lattice constant of the ohmic contact layer is matched with that of the substrate; the upper electrode layer is manufactured on the ohmic contact layer and used for providing holes for the active region; and the lower electrode is manufactured on the thinned substrate and used for providing electrons for the active region.

The invention discloses a three-dimensional farm for raising animals. The three-dimensional farm comprises a base, wherein at least one auto-rotatable breeding layer are arranged on the base, each breeding layer comprises a floorboard, and a light-transmission plate is arranged between every two adjacent breeding layers, so that the breeding layers can be uniformly illuminated during autorotation; and driving rollers and driven rollers are arranged at the bottom of the bottommost breeding layer and separately roll in sliding grooves in the surface of the base so as to drive the breeding layers to autorotate. Due to the arrangement of the entire farm, the number of the breeding layers can be selected according to circumstances, three-dimensional breeding is achieved, and the floor area is small; meanwhile, the entire farm can autorotate, so that bred animals are better illuminated uniformly, and the growth quality of poultry is guaranteed; through arranging a feeding mechanism, automatic feed feeding and automatic water feeding can be achieved and are very convenient; and through arranging a cleaning device and a heating device, the entire farm can achieve environmental protection and labor saving and has the advantages of attractive appearance, high efficiency, environment-friendliness, labor saving and the like.

The invention provides a semiconductor structure and a forming method thereof. The method comprises the following steps: providing a substrate; forming a first monocrystal semiconductor layer on the substrate; etching the first monocrystal semiconductor layer to form a plurality of openings; etching the first monocrystal semiconductor layer from the plurality of openings to form a plurality of holes or slots, which extend to the top surface or the interior of the substrate; performing corrosion treatment of the substrate through the plurality of holes or slots to enable the top of the substrate to adopt a porous structure; and depositing a monocrystal semiconductor material to form a second monocrystal semiconductor layer on the first monocrystal semiconductor layer. By adopting the method, the dislocation density of a monocrystal semiconductor can be reduced, cracks caused by thermal mismatch are avoided, the growth quality of a thin film is improved, and cost reduction and substrate stripping in the later period are facilitated.

The invention discloses an umbrella-shaped rotary three-dimensional cultivation device and belongs to the technical field of three-dimensional cultivation. The umbrella-shaped rotary three-dimensional cultivation device is characterized by comprising a support. A guiding rod is arranged on the support, a rotary motor is connected with the bottom of the guiding rod, a supporting plate is fixedly connected with the top of the guiding rod, a plurality of inclined cultivation plates are hinged to the edge of the supporting plate along the circumferential direction, and a supporting rod is respectively arranged between each cultivation plate and the guiding rod. Planting holes are distributed on each cultivation plate along the length direction, and planting cups are arranged in the planting holes. The umbrella-shaped rotary three-dimensional cultivation device is compact in structure and convenient to use and is used for cultivating plants.

The invention discloses a pot culture pea planting method. The pot culture pea planting method comprises the following steps of growing seedlings, growing up and harvesting. The method contributes to the rapid growth of peas, the incurred insect attack is small, and the growth quality of the peas is ensured.

The invention provides a formation method of a light emitting diode (LED). The method comprises the following steps that: a Si substrate is provided; a plurality of projection structures are formed on the Si substrate, wherein there is a certain gap between each two projection structures; a first semiconductor thin layer is formed to cover the plurality of projection structures and is connected with tops of the plurality of projection structures; and an LED structure, which contains a first-type group III-V compound material layer, a luminescent layer, a second type group III-V compound material layer, is formed on the first semiconductor thin layer. The plurality of projection structures enable a heat mismatch stress between an Si wafer and a semiconductor material layer of nitride-system compound to be released effectively, so that a large-sized epitaxial wafer can be formed favorably.

The invention relates to the technical field of potato cultivation, and specifically relates to a sweet potato cultivation method. Through the structural treatment upon a cultivation base during a sweet potato cultivation process, the sweet potato cultivation base can satisfy nutrition and nutrient supply needs during the sweet potato cultivation process, and weed overgrowth rate is also reduced, such that weeding frequency during the sweet potato cultivation process is reduced, high labor input is avoided, cultivation cost is reduced, and the damage to sweet potato seedlings due to excessive weeding treatments can be avoided. Therefore, sweet potato growth quality is ensured. With the application of substances such as a nutrient agent, plant ash, traditional Chinese medicine components, organic nutrients and an organic nutrient solution, and with the control over the positions of the substances in the structural layers of the base, the base can provide different nutrient components according to different sweet potato growth periods. Therefore, sweet potato growth can be rapidly improved, sweet potato yield can be improved, labor input can be reduced, and cost can be reduced.

The invention relates to a photoelectric functional crystal M3RE(PO4)3 and a preparation method thereof. The M3RE (PO4) 3 crystal is of a non-centrosymmetric structure, and belongs to a cubic system-43m point group, wherein M=Ba or Ca or Sr, RE=Y or La or Gd. The M3RE(PO4)3 crystal growth method comprises the steps of (1) polycrystal material synthesis, wherein stoichiometric MCO3, RE2O3 and a phosphorus compound are adopted, the phosphorus compound is excessive, and raw materials are sintered twice to obtain a M3RE(PO4)3 polycrystal material; (2) polycrystal material melting; (3) Czochralskicrystal growth. The prepared M3RE(PO4)3 crystal material is a high quality single crystal, not only are high optical transmittance and wide absorption edge achieved, but also no phase change exists from the room temperature to a melting point, deliquescence does not exist, and the piezoelectric activity and non-linear frequency conversion characteristics are achieved.

The invention belongs to the field of unmanned aerial vehicles, A traceability system of agricultural products based on unmanned aerial vehicle is provided, comprises a cloud platform, an unmanned aerial vehicle communicating with the cloud platform, and a ground station communicating with the cloud platform and the unmanned aerial vehicle, wherein, the ground station is used for generating a plant protection operation scheme according to the acquired plant protection operation drug/fertilizer information and field information, and sending the scheme to the unmanned aerial vehicle, and receiving the plant protection operation information sent by the unmanned aerial vehicle; The unmanned aerial vehicle (UAV) is used for executing plant protection operation tasks according to a plant protection operation scheme, and sending plant protection operation information to a cloud platform and a ground station; The cloud platform is used for receiving plant protection operation information sentby the unmanned aerial vehicle or the ground station, and outputting the plant protection operation information after analyzing and processing. The invention realizes the recording of the drug or fertilizer information in the crop growth process based on the unmanned aerial vehicle, can monitor the source, quality, frequency, dosage and the like of the drug/fertilizer production of the crop, and takes the growth process of the crop well as an important part of the agricultural product traceability archives.

The invention discloses a special high-density Australia lobster breeding pond, and relates to the technical field of related lobster breeding. The pond comprises a pond body, underwater vegetation isplanted at the bottom of the pond body, floating vegetation is planted on the water surface of the pond body, and one end of the pond body is fixedly connected with a water inlet pipe; the other endof the pond is fixedly connected with a water discharging pipe, the top edge of the pond body is fixedly connected with a rail, a pulley groove is formed in the top of the rail, a storage cart is arranged on the rail, and the bottom of the storage cart is fixedly connected with a driving system. The invention further discloses a high-density Australia lobster breeding method. The method comprisesthe following steps of A, pond preparation; B, water quality regulation; C, lobster seed releasing; D, feeding adopting feed; E, water quality detection; F, fishing and selling on the market. According to the breeding pond and method, the growth quality of lobsters is ensured, the growth and development speed of the lobsters is greatly increased, and the yield density of the lobsters is improved.

The invention discloses a cultivation method of a greenhouse watermelon. The method comprises the steps of seed soaking and germination accelerating, seedling, greenhouse building, field planting, greenhouse temperature management, fertilizer management, pruning and harvesting. Through entire greenhouse coverage of planting, rainwater and insect pests are effectively reduced, the life ability of plants is improved and the quality of a watermelon product is controlled. The growth quality of the plants is ensured and regeneration of the plants is promoted through the processes of strictly controlling the greenhouse temperature and controlling the fertilizer variety, the fertilization time, the fertilization amount and the fertilizer concentration, premature senescence is prevented and the growth period is prolonged, so that the effect of improving the yield through multi-batch harvesting is achieved. By using the cultivation method, the growth period of the watermelon is prolonged to about 6 months from 3-4 months, the harvest time can reach more than 4 months, 3-5 batches of watermelons can be harvested and the average acre yield reaches about 6,000kg, so that the land yield rate, the resource utilization rate and the labor productivity are improved to the maximal extent.

The invention relates to an yttrium strontium phosphate crystal as well as a preparation method and an application thereof. The chemical formula of the yttrium strontium phosphate crystal is Sr3Y(PO4)3, and the crystal is of an asymmetric structure and belongs to a cubic crystal system-43 m point group. The preparation method of the yttrium strontium phosphate crystal comprises the following steps: strontium yttrium phosphate polycrystalline materials are synthesized, and a homogeneously melted solution of yttrium strontium phosphate is obtained after heating and melting; an iridium bar or anyttrium strontium phosphate crystal is used as a seed crystal, so that the bottom end of the seed crystal is in close contact with the homogeneously melted solution of yttrium strontium phosphate; anda czochralski method is used for single crystal growth, and the temperature of the single crystal growth is 1700-1850 DEG C. The melting point of the yttrium strontium phosphate crystal is higher than 1800 DEG C, no phase transition from room temperature to the melting point exists, the chemical properties are stable, and no deliquescence exists, so that the yttrium strontium phosphate has significant application advantages in the high temperature piezoelectric and wide temperature nonlinear optical fields.

The invention discloses a directional solidification device comprising a first insulation board, a second insulation board and a rotating component, wherein the first insulation board and the second insulation board are completely the same in shape and are provided with a plurality of concentric circular ring areas on the surfaces, a plurality of through hole areas with the same size are formed on each concentric circular ring area at equal intervals, and a solid area between two adjacent through hole areas on each concentric circular ring area and the through hole areas are completely the same in shape; the first insulation board is fixed at the lower part of a graphite supporting platform; the second insulation board is fixedly connected with the rotating component, the upper surface of the second insulation board is close to the lower surface of the first insulation board, and the through hole areas on the second insulation board are completely overlapped with, partially overlapped with or separated from the through hole areas on the first insulation board selectively. The invention further discloses a polycrystalline ingot furnace and a polycrystalline ingot method, which can be used for guaranteeing a continuous and stable temperature gradient and ensuring the growth quality of columnar crystals.