155results about How to "Guaranteed growth quality" patented technology

The invention relates to a method for growing crystal by reducing atmosphere Kyropoulos method; the method is characterized in that on the basis of growing crystal by induction heating pulling method, a tungsten, or molybdenum, or tungsten molybdenum alloy crucible is used; graphite felt which is arranged outside the crucible is used as a heat insulator; the reducing atmosphere is formed at high temperature; a hard graphite felt heat cover or a zirconia brick heat cover combined with a tungsten molybdenum after heater are placed above the crucible to preserve heat for fused mass in the crucible and the crystal grows; an observation window is arranged at the upper cover of the heat cover and the upper side of a furnace wall to ensure uniformity and symmetry of temperature field and temperature gradient distribution; the observation window arranged at the upper cover of the heat cover and the upper side of the furnace wall are used to observe the fused mass and the conventional pulling method is used to carry out parallel shouldering on inoculating crystal; then power is reduced at a certain speed, meanwhile, the crystal can be slightly pulled or not pulled, that is the Kyropoulos method; after crystallization is over, power is continued to be reduced to lower the temperature of the crystal. With the method of the invention adopted, large-size and high-quality crystal can be grown at low cost.

The invention relates to the technical field of substrates, in particular to Anthurium substrate. The Anthurium substrate comprises, by weight percent, 45-50% of peat soil, 49.5-55% of urban organic waste, 0.2-0.6% of perlite, and 0.005-0.02% of bactericide. The urban organic waste is mixture of domestic sludge, mushroom residue, and compost of dry branches and fallen leaves. The bactericide is sodium p(dimethylamino)benzenediazo sulfonate. The components add up to 100% by weight. Cost in planting Anthurium can be effectively reduced by using the Anthurium substrate, water and fertilizer retention is improved, quality of Anthurium is improved, and disease and insect resistance of Anthurium is improved.

The invention provides a nitride high-voltage device on silicon substrate and a manufacturing method thereof. According to the nitride high-voltage device on the silicon substrate, a high-voltage tolerance layer is led into a drain electrode region, and the thickness of a partial epitaxial layer is thickened to bear higher voltage reduction, so that high punch through voltage resistant device is achieved. Via the method of partial generation, the high punch through voltage resistant device is achieved, the problems of warping and chap of nitride epitaxial layer, which are caused by a whole material with over thickness, are avoided, therefore, material generation quality is ensured, material generation efficiency is improved, and the cost is lowered.

The invention relates to the field of growth of monocrystalline diamonds through a microwave plasma chemical vapor deposition method and in particular relates to a gradient monocrystalline diamond anda preparation method thereof. Microwave plasma chemical vapor deposition equipment is adopted and high-purity air is introduced in a hydrogen and methane mixed gas source according to a continuous gradient concentration, so as to realize alternating deposition of a high-quality monocrystalline diamond layer without nitrogen and a nitrogen-containing diamond layer; then the gradient monocrystalline diamond with high quality, high strength and good toughness is prepared.

The invention discloses a multifunctional rape transplanter. The multifunctional rape transplanter comprises a vehicle frame and a trailer frame, wherein the trailer frame is mounted at the rear side of the vehicle frame, an operating system, a traveling system, a fertilizing system, a watering system, a pot seedling tray rack and a box moving system are mounted on the vehicle frame, a rotary-tillage furrowing system, a hole digging system, a seedling pulling, conveying and falling device and a soil covering and compacting system are mounted on the trailer frame, the rotary-tillage furrowing system, the hole digging system and the soil covering and compacting system are sequentially mounted from front to back, a seedling guide cup of the seedling pulling, conveying and falling device is arranged between the hole digging system and the soil covering and compacting system, the fertilizing port of the fertilizing system is arranged at the front side of the rotary-tillage furrowing system, the water outlet of the watering system is arranged at the rear side of the soil covering and compacting system, and the pot seedling tray rack is connected with the pot seedling outlet of the box moving system and the entrance of the seedling pulling, conveying and falling device. The multifunctional rape transplanter is simple in structure, convenient in use, simple to process and manufacture and good in economical efficiency.

The invention discloses a polysilicon growth ingot furnace. The polysilicon growth ingot furnace is provided with an upper furnace body and a lower furnace body, the upper furnace body is fixed at the upper part of a stand, the lower furnace body is arranged at the lower part of the stand through an opening device, a fixed upper heating chamber is arranged in the upper furnace body, a bearing plate buckled with four walls of the upper heating chamber is arranged at the lower side of a heat conduction plate, a hole is arranged in the centre of the lower furnace body, the hole part is provided with a lower heat field container, the lower heat field container is provided with a container wall with a separate circulating cooling system, a silicon liquid overflow container is arranged in the lower heat field container, and the lower end of the lower heat field container is connected with a container wall of the lower heat field container through a lifting device. Surrounding heating bodies, the upper heating body, the lower heating body, the upper heating field and the lower heating field are separately controlled to realize that gradients of the upper heating field and the lower heating field are conveniently operated so as to carry out directional solidification to produce large-scale polysilicon ingots. The silicon liquid overflow container can effectively prevent a silicon liquid from damaging the furnace body after the overflow of silicon liquid caused by cracking a crucible or other reasons, therefore, the invention has safe and reliable production .

The invention discloses a special microorganism compound fertilizer for the reproduction and growth period of rice, and relates to a fertilizer which is made from the following materials: urea, ammonium sulfate, ammonium dihydrogen phosphate, potassium sulfate, magnesium sulfate, calcium nitrate, zinc chloride, copper chloride, manganese sulfate, ferric sulfate, ferrous sulfate, sodium molybdate, boric acid, decomposed farmyard manure, animal viscera leftovers, fermented rapeseed meal, corn straws, filler and a microbial agent. The special microorganism compound fertilizer can effectively improve the ratio of content of each element in the soil, can well fit with the nutrition demand law of the reproduction and growth period of the rice, and can ensure the growth quality of the rice in the reproduction and growth period, the material utilization rate of the fertilizer is enhanced, the rice grain quality is improved, and the special microorganism compound fertilizer has very good promotion use value.

The invention provides metalorganic chemical vapor deposition (MOCVD) equipment and a method for removing parasitic particles thereof. Spray headers are arranged on the top of a reaction cavity, and organic metal gas, hydride gas, carrier gas and cleaning gas are conveyed into the reaction cavity. The organic metal gas and the hydride gas which have just been ejected are separated in the middle area of the bottom face of each spray header. The cleaning gas is delivered in the edge area of the bottom face of each spray header for decomposing the organic metal gas and the hydride gas to pre-react the formed parasitic particles. By means of the MOCVD equipment and the method for removing the parasitic particles thereof, pollution to the equipment inside the reaction cavity by the parasitic particles can be effectively reduced, the growth quality of thin films is guaranteed, and the growth rate of the thin films is increased.

The invention provides a storage structure and a forming method thereof, wherein the storage structure comprises a substrate, a plurality of channel structures formed on the substrate, and a plurality of grid structures matched with the channel structures mutually, wherein each channel structure comprises multiple single crystal semiconductor layers and multiple oxide layers, which are alternatively stacked on the direction vertical to the substrate, at least one oxide layer is a single crystal oxide layer, and each grid structure comprises a grid dielectric layer adjacent to the channel structures and a grid layer adjacent to the grid dielectric layer. The storage structure has the advantages of simple preparation process, low cost, high reading-writing speed and high storage density.

The invention discloses a gas inflowing and cooling device for MOCVD equipment. The gas inflowing and cooling device is provided with spray heads located at the top of the interior of a reaction chamber, gas inflowing guide pipes for organic metal gas are arranged in gas inlets for isolation gas in a penetrating mode, the isolation gas can form curtain-shaped gas flow and surround the periphery of the organic metal gas, and therefore the organic metal gas which is sprayed just now and hydride gas can be isolated and prevented from untimely reacting to generate parasitic particles. In addition, the parasitic particles can be prevented from being formed nearby the gas inlets formed in the bottom face of the gas inflowing device, therefore, the conveyed organic metal gas and the hydride gas can be evenly distributed on a base and all substrates, the thin film growth quality is guaranteed, and the thin film growth rate is improved.

The invention relates to an InP based long wavelength 2-3mum quasi-quantum dot laser structure. The laser structure comprises a substrate, a lower cladding, a lower waveguide layer, a matching or tensile strain structural layer with a period of 1-20, an upper waveguide layer, an upper cladding, an ohmic contact layer, an upper electrode and a lower electrode, wherein the lower cladding layer is manufactured on the substrate; the lower waveguide layer is manufactured on the lower cladding and used as a carrier limit layer for improving the electron-hole composite efficiency and the working temperature of the laser; the matching or tensile strain structural layer is manufactured on the lower waveguide layer and used as an active region of the laser and is a core part of the laser; the upper waveguide layer is manufactured on the matching or tensile strain structural layer with a period of 1-20 and used as a carrier limit layer for limiting carriers in the active region so as to increase the electron-hole composite efficiency and the working temperature of the laser; the upper cladding layer is manufactured on the upper waveguide layer; the ohmic contact layer is manufactured on the upper cladding, and the lattice constant of the ohmic contact layer is matched with that of the substrate; the upper electrode layer is manufactured on the ohmic contact layer and used for providing holes for the active region; and the lower electrode is manufactured on the thinned substrate and used for providing electrons for the active region.

The invention discloses a three-dimensional farm for raising animals. The three-dimensional farm comprises a base, wherein at least one auto-rotatable breeding layer are arranged on the base, each breeding layer comprises a floorboard, and a light-transmission plate is arranged between every two adjacent breeding layers, so that the breeding layers can be uniformly illuminated during autorotation; and driving rollers and driven rollers are arranged at the bottom of the bottommost breeding layer and separately roll in sliding grooves in the surface of the base so as to drive the breeding layers to autorotate. Due to the arrangement of the entire farm, the number of the breeding layers can be selected according to circumstances, three-dimensional breeding is achieved, and the floor area is small; meanwhile, the entire farm can autorotate, so that bred animals are better illuminated uniformly, and the growth quality of poultry is guaranteed; through arranging a feeding mechanism, automatic feed feeding and automatic water feeding can be achieved and are very convenient; and through arranging a cleaning device and a heating device, the entire farm can achieve environmental protection and labor saving and has the advantages of attractive appearance, high efficiency, environment-friendliness, labor saving and the like.

The invention provides a semiconductor structure and a forming method thereof. The method comprises the following steps: providing a substrate; forming a first monocrystal semiconductor layer on the substrate; etching the first monocrystal semiconductor layer to form a plurality of openings; etching the first monocrystal semiconductor layer from the plurality of openings to form a plurality of holes or slots, which extend to the top surface or the interior of the substrate; performing corrosion treatment of the substrate through the plurality of holes or slots to enable the top of the substrate to adopt a porous structure; and depositing a monocrystal semiconductor material to form a second monocrystal semiconductor layer on the first monocrystal semiconductor layer. By adopting the method, the dislocation density of a monocrystal semiconductor can be reduced, cracks caused by thermal mismatch are avoided, the growth quality of a thin film is improved, and cost reduction and substrate stripping in the later period are facilitated.

The invention discloses a planting method of oriental white oak, which particularly comprising the steps of: seed collecting, seed pretreating, sowing, seedling raising and transplanting to late fertilizer and water managing. The germination rate of oriental white oak seeds is effectively increased, the growth quality of nursery stocks is ensured due to the adoption of a sowing and seedling raising method, the transplanting survival rate of the oriental white oak is also improved due to the adoption of a reasonable transplanting method and late soil and fertilizer and water management in different periods, the cultured oriental white oak is developed in fibrous root systems and grows vigorously, a ripen tree is strong in appearance with luxuriant foliage, and has a good ornamental value; a strong promotion function is achieved for urban gardening utilization and popularization and forestry ecological building of trees with good varieties.

The invention relates to a process and a device for rapidly growing a sapphire crystal material of a corundum system by virtue of a flame fusion method and belongs to the field of processes and devices for preparing crystals of the corundum system by virtue of the flame fusion method. By improvement on the crystal growth process, the rapid growth method is effectively broken through, the difficulty of not large growth size of the crystal is completely solved, the production efficiency is greatly improved and the production cost is further effectively controlled. Furthermore, at a high temperature of 2050 DEG C, the low-melting-point impurity in gamma-Al2O3 powder is gasified, the high-melting-point impurity is oxidized under an oxidizing atmosphere, the growth process of the crystal is fully realized, the repurification and recrystallization processes of the crystal are completed in fact, therefore, under the new process condition, the purity of alpha-Al2O3 sapphire crystal reaches up to 99.9998% and the requirement of users on the purity of the crystal is fully met. The whole set of device has simple and reasonable structure and design, is scientific and practical and suitable for being popularized in the industry and the crystal growth operation is efficiently performed in high quality manner.

The invention discloses a pot culture pea planting method. The pot culture pea planting method comprises the following steps of growing seedlings, growing up and harvesting. The method contributes to the rapid growth of peas, the incurred insect attack is small, and the growth quality of the peas is ensured.

The invention provides a cultivation technology for sowing greenhouse watermelons one time and harvesting many batches of watermelons in one year. The technology comprises the following steps of firstly, variety selecting, secondly, seed soaking and sprouting, thirdly, seedling culturing, fourthly, field planting, fifthly, greenhouse temperature and fertilizer managing, and sixthly, ripe watermelon harvesting, and the fifth step is repeatedly carried out after harvesting of each batch. The cultivation technology is adopted for cultivating the watermelons, the watermelon seedling growing period can be effectively prolonged, the watermelons can be sown one time while many batches of watermelons are harvested, and the watermelon yield is greatly improved.

The invention provides a formation method of a light emitting diode (LED). The method comprises the following steps that: a Si substrate is provided; a plurality of projection structures are formed on the Si substrate, wherein there is a certain gap between each two projection structures; a first semiconductor thin layer is formed to cover the plurality of projection structures and is connected with tops of the plurality of projection structures; and an LED structure, which contains a first-type group III-V compound material layer, a luminescent layer, a second type group III-V compound material layer, is formed on the first semiconductor thin layer. The plurality of projection structures enable a heat mismatch stress between an Si wafer and a semiconductor material layer of nitride-system compound to be released effectively, so that a large-sized epitaxial wafer can be formed favorably.

The invention relates to the technical field of potato cultivation, and specifically relates to a sweet potato cultivation method. Through the structural treatment upon a cultivation base during a sweet potato cultivation process, the sweet potato cultivation base can satisfy nutrition and nutrient supply needs during the sweet potato cultivation process, and weed overgrowth rate is also reduced, such that weeding frequency during the sweet potato cultivation process is reduced, high labor input is avoided, cultivation cost is reduced, and the damage to sweet potato seedlings due to excessive weeding treatments can be avoided. Therefore, sweet potato growth quality is ensured. With the application of substances such as a nutrient agent, plant ash, traditional Chinese medicine components, organic nutrients and an organic nutrient solution, and with the control over the positions of the substances in the structural layers of the base, the base can provide different nutrient components according to different sweet potato growth periods. Therefore, sweet potato growth can be rapidly improved, sweet potato yield can be improved, labor input can be reduced, and cost can be reduced.

The invention relates to a photoelectric functional crystal M3RE(PO4)3 and a preparation method thereof. The M3RE (PO4) 3 crystal is of a non-centrosymmetric structure, and belongs to a cubic system-43m point group, wherein M=Ba or Ca or Sr, RE=Y or La or Gd. The M3RE(PO4)3 crystal growth method comprises the steps of (1) polycrystal material synthesis, wherein stoichiometric MCO3, RE2O3 and a phosphorus compound are adopted, the phosphorus compound is excessive, and raw materials are sintered twice to obtain a M3RE(PO4)3 polycrystal material; (2) polycrystal material melting; (3) Czochralskicrystal growth. The prepared M3RE(PO4)3 crystal material is a high quality single crystal, not only are high optical transmittance and wide absorption edge achieved, but also no phase change exists from the room temperature to a melting point, deliquescence does not exist, and the piezoelectric activity and non-linear frequency conversion characteristics are achieved.

The embodiment of the invention provides a crop information processing method and device, equipment and a computer storage medium, and the method comprises the steps: obtaining a plurality of to-be-processed images of to-be-processed crops, wherein the to-be-processed images at least comprise a to-be-processed top view and a to-be-processed side view; and processing the to-be-processed top view and the to-be-processed side view by using an estimation model to obtain related information corresponding to the to-be-processed crops. The multiple to-be-processed images of the to-be-processed crop are obtained, then the to-be-processed top view and the to-be-processed side view are processed by an estimation model, and the related information corresponding to the to-be-processed crop is obtained, so that the quality and efficiency of crop related information obtaining are effectively guaranteed; and the processing method is suitable for processing large-scale crop information, so that the labor cost is further reduced.

The invention relates to a device capable of carbonizing tantalum sheets, and belongs to the technical field of semiconductor material preparation. The device and the method aim to overcome the defectthat an existing tantalum sheet carbonization device cannot distinguish the tantalum sheet carbonization conditions before and after carbonization. The device capable of carbonizing the plurality oftantalum sheets simultaneously comprises a crucible body, a crucible upper cover, tantalum sheet brackets, an insulating layer cushion block and an insulating layer shell; and the tantalum sheet brackets are arranged in the crucible body in a stack mode, numbers are engraved on the outer walls of the tantalum sheet brackets, bosses are machined on the inner walls of the tantalum sheet brackets, the crucible upper cover covers the crucible body, and the insulating layer cushion block and the insulating layer shell are arranged outside the crucible body in a sleeving mode. The method capable ofcarbonizing the plurality of tantalum sheets simultaneously comprises the steps that carbon powder and the tantalum sheets are placed into the tantalum sheet brackets according to the sequence of thecarbon powder, the tantalum sheets and the carbon powder, the crucible upper cover is covered, the insulating layer is placed, heating is conducted, and the tantalum sheets are carbonized for a certain period of time at a certain carbonization temperature. The tantalum sheets are distinguished through the marks on the tantalum sheet brackets, and whether tantalum sheet carbonization reaches the standard or not is observed by comparing the weights of the tantalum sheets before and after carbonization.

The invention belongs to the field of unmanned aerial vehicles, A traceability system of agricultural products based on unmanned aerial vehicle is provided, comprises a cloud platform, an unmanned aerial vehicle communicating with the cloud platform, and a ground station communicating with the cloud platform and the unmanned aerial vehicle, wherein, the ground station is used for generating a plant protection operation scheme according to the acquired plant protection operation drug / fertilizer information and field information, and sending the scheme to the unmanned aerial vehicle, and receiving the plant protection operation information sent by the unmanned aerial vehicle; The unmanned aerial vehicle (UAV) is used for executing plant protection operation tasks according to a plant protection operation scheme, and sending plant protection operation information to a cloud platform and a ground station; The cloud platform is used for receiving plant protection operation information sentby the unmanned aerial vehicle or the ground station, and outputting the plant protection operation information after analyzing and processing. The invention realizes the recording of the drug or fertilizer information in the crop growth process based on the unmanned aerial vehicle, can monitor the source, quality, frequency, dosage and the like of the drug / fertilizer production of the crop, and takes the growth process of the crop well as an important part of the agricultural product traceability archives.

The invention relates to a garden irrigation device comprising a water supply device. The water supply device is connected with a water distribution pipe, a first water guide pipe, a second water guide pipe and a third water guide pipe are arranged on the water distribution pipe, and the first water guide pipe, the second water guide pipe and the third water guide pipe are sequentially arranged along the length direction of the water distribution pipe. A micro-spray device used for irrigating herbaceous plants is connected on the first water guide pipe, a drip irrigation device used for irrigating trees and shrubs is connected on the second water guide pipe, and the third water guide pipe is connected with a water flow regulation device through a four-way pipe. The garden irrigation device has the advantages that the micro spray device and the irrigation device are of an integrated design, few pipelines are used, layout is facilitated, landscape effect is improved, usage functions are increased, growth quality of gardens is guaranteed, and water is saved.

The invention belongs to an intelligent planting control system and method. An unmanned intervention planting system using an AI spectrum and a control method thereof are provided to solve the technical problem that a conventional greenhouse lacks a targeted matched control system. The planting system comprises a monitoring unit, a transmission unit, a control analysis unit and a regulation and control unit, wherein plant and soil spectral information in a greenhouse is collected in real time through the monitoring unit; environmental information and illumination conditions in the greenhouse are monitored and transmitted to the control analysis unit through the transmission unit; and the control analysis unit sends corresponding regulation and control instructions to the regulation and control unit to regulate the environment, crops and the like in the greenhouse after comparing and analyzing the environmental information and illumination conditions with internally stored origin crop information. The control method comprises the steps of: monitoring conditions in the greenhouse in real time, then calling corresponding information of origin crops in the control analysis unit, carrying out contrastive analysis so as to generate a corresponding regulation and control instruction, and allowing the regulation and control unit to regulate the greenhouse according to the content of the instruction after receiving the regulation and control instruction.

The invention discloses a special high-density Australia lobster breeding pond, and relates to the technical field of related lobster breeding. The pond comprises a pond body, underwater vegetation isplanted at the bottom of the pond body, floating vegetation is planted on the water surface of the pond body, and one end of the pond body is fixedly connected with a water inlet pipe; the other endof the pond is fixedly connected with a water discharging pipe, the top edge of the pond body is fixedly connected with a rail, a pulley groove is formed in the top of the rail, a storage cart is arranged on the rail, and the bottom of the storage cart is fixedly connected with a driving system. The invention further discloses a high-density Australia lobster breeding method. The method comprisesthe following steps of A, pond preparation; B, water quality regulation; C, lobster seed releasing; D, feeding adopting feed; E, water quality detection; F, fishing and selling on the market. According to the breeding pond and method, the growth quality of lobsters is ensured, the growth and development speed of the lobsters is greatly increased, and the yield density of the lobsters is improved.

The invention discloses a cultivation method of a greenhouse watermelon. The method comprises the steps of seed soaking and germination accelerating, seedling, greenhouse building, field planting, greenhouse temperature management, fertilizer management, pruning and harvesting. Through entire greenhouse coverage of planting, rainwater and insect pests are effectively reduced, the life ability of plants is improved and the quality of a watermelon product is controlled. The growth quality of the plants is ensured and regeneration of the plants is promoted through the processes of strictly controlling the greenhouse temperature and controlling the fertilizer variety, the fertilization time, the fertilization amount and the fertilizer concentration, premature senescence is prevented and the growth period is prolonged, so that the effect of improving the yield through multi-batch harvesting is achieved. By using the cultivation method, the growth period of the watermelon is prolonged to about 6 months from 3-4 months, the harvest time can reach more than 4 months, 3-5 batches of watermelons can be harvested and the average acre yield reaches about 6,000kg, so that the land yield rate, the resource utilization rate and the labor productivity are improved to the maximal extent.

The invention relates to an yttrium strontium phosphate crystal as well as a preparation method and an application thereof. The chemical formula of the yttrium strontium phosphate crystal is Sr3Y(PO4)3, and the crystal is of an asymmetric structure and belongs to a cubic crystal system-43 m point group. The preparation method of the yttrium strontium phosphate crystal comprises the following steps: strontium yttrium phosphate polycrystalline materials are synthesized, and a homogeneously melted solution of yttrium strontium phosphate is obtained after heating and melting; an iridium bar or anyttrium strontium phosphate crystal is used as a seed crystal, so that the bottom end of the seed crystal is in close contact with the homogeneously melted solution of yttrium strontium phosphate; anda czochralski method is used for single crystal growth, and the temperature of the single crystal growth is 1700-1850 DEG C. The melting point of the yttrium strontium phosphate crystal is higher than 1800 DEG C, no phase transition from room temperature to the melting point exists, the chemical properties are stable, and no deliquescence exists, so that the yttrium strontium phosphate has significant application advantages in the high temperature piezoelectric and wide temperature nonlinear optical fields.

The invention discloses a directional solidification device comprising a first insulation board, a second insulation board and a rotating component, wherein the first insulation board and the second insulation board are completely the same in shape and are provided with a plurality of concentric circular ring areas on the surfaces, a plurality of through hole areas with the same size are formed on each concentric circular ring area at equal intervals, and a solid area between two adjacent through hole areas on each concentric circular ring area and the through hole areas are completely the same in shape; the first insulation board is fixed at the lower part of a graphite supporting platform; the second insulation board is fixedly connected with the rotating component, the upper surface of the second insulation board is close to the lower surface of the first insulation board, and the through hole areas on the second insulation board are completely overlapped with, partially overlapped with or separated from the through hole areas on the first insulation board selectively. The invention further discloses a polycrystalline ingot furnace and a polycrystalline ingot method, which can be used for guaranteeing a continuous and stable temperature gradient and ensuring the growth quality of columnar crystals.