Polysilicon growth ingot furnace

Abstract

The invention discloses a polysilicon growth ingot furnace. The polysilicon growth ingot furnace is provided with an upper furnace body and a lower furnace body, the upper furnace body is fixed at the upper part of a stand, the lower furnace body is arranged at the lower part of the stand through an opening device, a fixed upper heating chamber is arranged in the upper furnace body, a bearing plate buckled with four walls of the upper heating chamber is arranged at the lower side of a heat conduction plate, a hole is arranged in the centre of the lower furnace body, the hole part is provided with a lower heat field container, the lower heat field container is provided with a container wall with a separate circulating cooling system, a silicon liquid overflow container is arranged in the lower heat field container, and the lower end of the lower heat field container is connected with a container wall of the lower heat field container through a lifting device. Surrounding heating bodies, the upper heating body, the lower heating body, the upper heating field and the lower heating field are separately controlled to realize that gradients of the upper heating field and the lower heating field are conveniently operated so as to carry out directional solidification to produce large-scale polysilicon ingots. The silicon liquid overflow container can effectively prevent a silicon liquid from damaging the furnace body after the overflow of silicon liquid caused by cracking a crucible or other reasons, therefore, the invention has safe and reliable production .

Description

technical field [0001] The invention relates to a production equipment for producing basic materials of solar cells, in particular to a double-chamber polysilicon growing ingot furnace. Background technique [0002] Polysilicon growth ingot furnace is a kind of silicon melting and growth equipment, suitable for producing polysilicon ingots for solar cells. Heating and melting, directional crystal growth, heat removal treatment, cooling out of the furnace, the traditional polysilicon ingot furnace mainly has a complex structure, and the thermal field formed by the single-chamber structure is difficult to control. Contents of the invention [0003] The technical problem to be solved by the present invention is to propose a polysilicon growth ingot furnace with convenient and safe operation and good crystal growth quality in view of the deficiencies of the prior art. [0004] The technical problem to be solved by the present invention is achieved through the following techni...

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Problems solved by technology

[0002] Polysilicon growth ingot furnace is a kind of silicon melting and growth equipment, suitable for producing polysilicon ingots for solar cells. Heating and melting, directional crystal growth, heat removal treatment, cooling out of the furnace, the traditional polysilicon ingot furnace mainly has a complex structure, and the thermal field formed by the single-chamber structure is difficult to control

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