Device and method capable of carbonizing plurality of tantalum sheets simultaneously

A tantalum sheet and carbonization temperature technology, which is applied in the field of semiconductor material preparation, can solve problems such as unfavorable product tracking, inability to distinguish the carbonization of tantalum sheets, etc., and achieves the effects of low processing difficulty, simple structure and high carbonization efficiency.
CN112159952AActive Publication Date: 2021-01-01哈尔滨科友半导体产业装备与技术研究院有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
哈尔滨科友半导体产业装备与技术研究院有限公司
Publication Date
2021-01-01

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Abstract

The invention relates to a device capable of carbonizing tantalum sheets, and belongs to the technical field of semiconductor material preparation. The device and the method aim to overcome the defectthat an existing tantalum sheet carbonization device cannot distinguish the tantalum sheet carbonization conditions before and after carbonization. The device capable of carbonizing the plurality oftantalum sheets simultaneously comprises a crucible body, a crucible upper cover, tantalum sheet brackets, an insulating layer cushion block and an insulating layer shell; and the tantalum sheet brackets are arranged in the crucible body in a stack mode, numbers are engraved on the outer walls of the tantalum sheet brackets, bosses are machined on the inner walls of the tantalum sheet brackets, the crucible upper cover covers the crucible body, and the insulating layer cushion block and the insulating layer shell are arranged outside the crucible body in a sleeving mode. The method capable ofcarbonizing the plurality of tantalum sheets simultaneously comprises the steps that carbon powder and the tantalum sheets are placed into the tantalum sheet brackets according to the sequence of thecarbon powder, the tantalum sheets and the carbon powder, the crucible upper cover is covered, the insulating layer is placed, heating is conducted, and the tantalum sheets are carbonized for a certain period of time at a certain carbonization temperature. The tantalum sheets are distinguished through the marks on the tantalum sheet brackets, and whether tantalum sheet carbonization reaches the standard or not is observed by comparing the weights of the tantalum sheets before and after carbonization.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor material preparation, and in particular relates to a device and a method for a tantalum carbide sheet. Background technique

[0002] AlN single crystal has the largest forbidden band width, the highest breakdown field strength, high thermal conductivity, good thermal and chemical stability among all direct bandgap semiconductor materials, and has broad application prospects in the fields of microelectronics and optoelectronics. It has become a research hotspot at home and abroad and has attracted much attention. At present, the most commonly used methods for preparing AlN single crystal substrates are HVPE (halide vapor phase epitaxy) and PVT (physical vapor transport). For AlN HVPE growth equipment, due to the strong corrosiveness of aluminum halides (AlCl, AlCl3, etc.) and the high operating temperature (usually greater than 1400 ° C), the construction of HVPE equipment is difficult, cost...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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