Nitride high-voltage device on silicon substrate and manufacturing method thereof

Abstract

The invention provides a nitride high-voltage device on silicon substrate and a manufacturing method thereof. According to the nitride high-voltage device on the silicon substrate, a high-voltage tolerance layer is led into a drain electrode region, and the thickness of a partial epitaxial layer is thickened to bear higher voltage reduction, so that high punch through voltage resistant device is achieved. Via the method of partial generation, the high punch through voltage resistant device is achieved, the problems of warping and chap of nitride epitaxial layer, which are caused by a whole material with over thickness, are avoided, therefore, material generation quality is ensured, material generation efficiency is improved, and the cost is lowered.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a nitride high-voltage device on a silicon substrate and a method for manufacturing the nitride high-voltage device. Background technique [0002] Wide bandgap compound semiconductor materials have shown great potential in high frequency, high temperature, high power and other fields due to their characteristics of large bandgap width, high electron saturation drift velocity, high breakdown field strength, and good thermal conductivity. Gallium nitride high electron mobility devices have attracted the attention of many researchers all over the world because of their superior performance and huge development potential. [0003] In the past, GaN power devices were made on sapphire or silicon carbide substrates. Such substrate materials are relatively expensive and difficult to achieve large-scale substrate materials and epitaxial layers, so GaN power devices ar...

AI Technical Summary

Problems solved by technology

[0007] Although the technology of growing nitride epitaxial layers on silicon materials is becoming more and more mature, the thickness of grown nitride epitaxial layers is greatly limited because of the huge lattice mismatch and thermal mismatch between silicon materials and nitrides. , Generally speaking, it is about 2 microns to 4 microns. It will not only take longer to grow an overly thick nitride epitaxial layer, increase costs, and reduce production capacity, but also the quality of the epitaxial layer will deteriorate, and it will easily warp or crack. , increase the difficulty of the process, reduce the yield, etc.

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