MicroLEDs and MicroLED Display Panels

Abstract

A microLED includes: two or more light-emitting mesa arranged vertically from top to bottom; and at least one distributed Bragg reflection (DBR) layer formed between adjacent light-emitting mesa and configured to reflect light emitted from a light-emitting mesa disposed above the DBR layer and to allow light emitted from one or more light-emitting mesa disposed below the DBR layer to pass through.

Description

TECHNICAL FIELD

[0001] The present disclosure relates generally to micro-LED manufacturing technology, and more particularly, to micro-LEDs and micro-LED display panels. BACKGROUND

[0002] Inorganic micro-pixel light emitting diodes, also known as micro light emitting diodes, micro-LEDs, or μ-LEDs, are becoming more important for various applications including self-emissive micro-displays, visible light communication, and optogenetics. Micro-LEDs have better strain relaxation, higher light extraction efficiency, and uniform current spreading, thus having higher output performance than conventional LEDs. Micro-LEDs also show several advantages over conventional LEDs, such as improved thermal effects, faster response speed, larger operating temperature range, higher resolution, wider color gamut, higher contrast, lower power consumption, and operability at higher current density.

[0003] Micro-LEDs can include a plurality of light emitting mesas, and each light emitting mesa can be electrically connected to a corresponding electrode so that each light emitting mesa can be controlled. Since the plurality of light emitting mesas are arranged in a vertical direction, light loss can occur within the micro-LED, which can reduce light emitting efficiency. SUMMARY

[0004] Embodiments of the present disclosure provide a micro-LED. The micro-LED includes two or more light emitting mesas arranged in a vertical direction from top to bottom; and at least one Distributed Bragg Reflection (DBR) layer formed between adjacent light emitting mesas and configured to reflect light emitted by a light emitting mesa of the adjacent light emitting mesas arranged above the DBR layer and to pass light emitted by one or more light emitting mesas arranged below the DBR layer.

[0005] Embodiments of the present disclosure also provide a micro-LED display panel. The micro-LED display panel includes an Integrated Circuit (IC) backplane including a bottom pad array including a plurality of bottom pads; and a micro-LED array formed on the IC backplane, the micro-LED array including a plurality of the above-described micro-LEDs. One micro-LED of the plurality of micro-LEDs is electrically connected to a group of bottom pads of the plurality of bottom pads. BRIEF DESCRIPTION OF DRAWINGS

[0006] Embodiments of the present disclosure and various aspects are described in the detailed description and drawings below. The various features illustrated in the drawings are not necessarily drawn to scale.

[0007] Figure 1A structural diagram showing a top view of a micro LED display panel is shown.

[0008] Figure 2 A structural diagram showing an exemplary micro LED is shown.

[0009] Figure 3 is a table showing exemplary parameters of a first DBR layer and a second DBR layer as shown in Figure 2

[0010] Figure 4 is a graph showing a relationship between reflectivity and wavelength of light of a first DBR layer and a second DBR layer as shown in Figure 3

[0011] Figure 5 A structural diagram showing a top view of a micro LED display panel is shown. DETAILED DESCRIPTION

[0012] Reference will now be made to the example embodiments. Examples of the example embodiments are shown in the drawings. The following description refers to the accompanying drawings in which same numbers in different drawings represent the same or similar elements unless otherwise stated. The implementation described in the following description of example embodiments is not meant to represent all implementations consistent with the present disclosure. Rather, the implementation is only one example implementation consistent with the aspects of the present disclosure as recited in the appended claims. Specific aspects of the present disclosure are described in more detail below. If the terms and definitions provided herein conflict with the terms and / or definitions incorporated by reference, the terms and definitions provided herein prevail.

[0013] Embodiments of the present disclosure provide a micro LED with improved light emitting efficiency. The micro LED includes at least two light emitting mesas arranged in a vertical direction, and at least one dielectric distributed Bragg reflector (DBR) layer arranged between adjacent light emitting mesas. Each DBR layer includes first and second layers alternately layered. The DBR layer is configured to reflect light emitted by the light emitting mesa above the DBR layer, and to pass light emitted by one or more light emitting mesas below the DBR layer, such that the light emitting efficiency of the micro LED is improved, and each light emitting mesa can have the same size.

[0014] Figure 1 A structural diagram showing an exemplary DBR layer 100 is shown. As Figure 1 ​​As shown, the DBR layer 100 includes first layers 110 and second layers 120 alternately layered. The refractive index of the first layers 110 is denoted as n1, and the thickness of the first layers 110 is denoted as d1. The refractive index of the second layers 120 is denoted as n2, and the thickness of the second layers 120 is denoted as d2. The wavelength to be reflected by the DBR layer 100 is denoted as λ b . The wavelength λ b may be selected according to the wavelength range to be reflected by the DBR layer 100. Different materials can have different refractive indices. In some embodiments, the thickness d1 of the first layers 110 can be obtained by equation (1):

[0015]

[0016] The thickness d2 of the second layers 120 can be obtained by equation (2):

[0017]

[0018] The stopband B of the DBR layer 100 can be obtained by equation (3):

[0019]

[0020] In the present disclosure, the stopband B of the DBR layer 100 represents a range of wavelengths, and light within the range of wavelengths cannot pass through the DBR layer 100 while being totally reflected by the DBR layer 100. After the materials of the first layers and the second layers are selected, the corresponding refractive indices n1 and n2 are determined accordingly. In order to obtain better reflection efficiency, a suitable stopband B can be obtained by adjusting the wavelength λb based on equation (3). The value of the wavelength λb should be adjusted according to the range of wavelengths of the light to be reflected, for example, the range of wavelengths of the light emitted by the light-emitting mesa above the DBR layer. The stopband B can be set to 100 nm, or in some embodiments, the stopband B can be less than 100 mn, for example, 80 nm, which can be determined according to specific practices. Then, the thickness d1 and the thickness d2 can be determined according to equation (1) and equation (2), respectively.

[0021] In some embodiments, the total number of the first layers 110 and the second layers 120 is denoted as N, and N is a positive integer greater than 1. The total thickness of the DBR layer 100 is the sum of the thicknesses of the N layers of the first layers 110 and the second layers 120. In some embodiments, when N is even, the number of the first layers 110 and the number of the second layers 120 are the same, i.e., N / 2. When N is odd, the number of the first layers 110 is greater than the number of the second layers 120, i.e., the number of the first layers 110 is (N+1) / 2, and the number of the second layers 120 is (N-1) / 2.

[0022] The DBR layer 100 reflects the light with the wavelength λb The total light reflection efficiency increases with increasing N. To balance the size and reflection efficiency of the microLED, the total thickness of the DBR layer 100 is preferably no greater than 2 μm.

[0023] In some embodiments, the materials of the first layer 110 and the second layer 120 are different materials with different refractive indices. For example, the material of the first layer 110 is SiO2, and the material of the second layer 120 is Si3N4.

[0024] In some embodiments, amorphous silicon (a-Si) is used in the DBR layer 100. For example, one of the materials of the first layer 110 and the second layer 120 is a-Si. In some embodiments, the first layer 110 is made of SiO2, and the second layer 120 is made of a-Si. When one of the materials of the first layer 110 and the second layer 120 is a-Si, the total thickness of the DBR layer 100 can be relatively thin, for example, less than 500 nm. Since SiO2 can have better bonding with other layers, in this case, the number N of the first layer 110 and the second layer 120 is odd. Therefore, the first layer 110 is bonded to the other layers of the microLED as SiO2.

[0025] Figure 2 A structural diagram of an exemplary microLED 200 according to some embodiments of this disclosure is shown. Figure 2 As shown, in this embodiment, the micro-LED 200 includes three light-emitting mesa surfaces 231, 232, and 233 disposed from bottom to top on the IC backplane 210. A first DBR layer 241 is disposed between the first light-emitting mesa surface 231 and the second light-emitting mesa surface 232. A second DBR layer 242 is disposed between the second light-emitting mesa surface 232 and the third light-emitting mesa surface 233. In this embodiment, the first light-emitting mesa surface 231 emits red light 262, the second light-emitting mesa surface 232 emits green light 264, and the third light-emitting mesa surface 233 emits blue light 266. Therefore, the first DBR layer 241 is configured to reflect the green light 264 emitted by the second light-emitting mesa surface 232 and the blue light 266 emitted by the third light-emitting mesa surface 233, and allow the red light 262 emitted by the first light-emitting mesa surface 231 to pass through. The second DBR layer 242 is configured to reflect blue light 266 emitted by the third light-emitting mesa 233, and allow red light 262 and green light 264 emitted by the first light-emitting mesa 231 or the second light-emitting mesa 232 to pass through. With this structure, light loss of blue light 266 and green light 262 is reduced, thereby improving the luminous efficiency of the micro-LED 200. The structures of the first DBR layer 241 and the second DBR layer 242 are those described above, see reference... Figure 1 And more details will be described below.

[0026] Figure 3This is a table illustrating exemplary parameters of the first DBR layer 241 and the second DBR layer 242 according to some embodiments of this disclosure. Figure 3 As shown, in this embodiment, based on the materials of the first layer and the second layer of the first DBR layer 241, the refractive index n1 of the first layer of the first DBR layer 241 is 1.45, and the refractive index n2 of the second layer of the first DBR layer 241 is 2.0. Since the first DBR layer 241 is configured to reflect green light 264 (e.g., corresponding wavelengths of approximately 510 nm to 540 nm) emitted by the second emitting mesa 232 and blue light 266 (e.g., corresponding wavelengths of approximately 440 nm to 470 nm) emitted by the third emitting mesa 233, the wavelength λ of the first DBR layer 241 is selected. b The wavelength is approximately 480nm to 500nm. To obtain a stopband B of 100nm for the first DBR layer 241, the wavelength λ of the first DBR layer 241 is determined based on the above equation (3). b The thickness is 480nm. Then, according to equations (1) and (2), the thickness d1 of the first layer of the first DBR layer 241 and the thickness d2 of the second layer of the first DBR layer 241 are 83nm and 60nm, respectively.

[0027] Similarly, based on the materials of the first and second layers of the second DBR layer 242, the refractive index n1 of the first layer of the second DBR layer 242 is 1.45, and the refractive index n2 of the second layer of the second DBR layer 242 is 2.1. Since the second DBR layer 242 is configured to reflect blue light 266 emitted by the third emitting mesa 243 (e.g., with a corresponding wavelength of approximately 440 nm to 470 nm), the wavelength λ of the second DBR layer 242 is chosen accordingly. b Less than 440nm. In order to obtain a stopband B of 100nm for the second DBR layer 242, the wavelength λ of the second DBR layer 242 can be determined based on the above equation (3). b The thickness is 410 nm. Then, according to equations (1) and (2), the thickness d1 of the first layer of the second DBR layer 242 and the thickness d2 of the second DBR layer 242 are 71 nm and 49 nm, respectively.

[0028] Figure 4 This is a graph illustrating the relationship between the reflectivity of the first DBR layer 241 and the second DBR layer 242 and the wavelength of light according to some embodiments of this disclosure. In this embodiment, N, the total number of layers of the first DBR layer 241 and the second DBR layer 242, is equal to 15. Figure 4As shown, the X-axis represents the wavelength of light, and the Y-axis represents the reflectivity corresponding to the wavelength. The curves A and B represent the relationship between the reflectivity and the wavelength of the first DBR layer 241 and the second DBR layer 242, respectively. When the reflectivity is 100%, the light having the corresponding wavelength can be totally reflected by the corresponding DBR layer, and when the reflectivity is 0, the light having the corresponding wavelength can be totally transmitted through the corresponding DBR layer. Referring to Figure 4 The stopband (e.g., the wavelength range corresponding to the reflectivity of about 100%) of the first DBR layer 241 is 100 nm in the wavelength range of 430 nm to 530 nm. The reflectivity of the wavelength greater than 600 nm corresponding to red light is relatively low, e.g., less than 30%. That is, the first DBR layer 241 can reflect most of the green light and blue light, and pass the red light. Similarly, the stopband of the second DBR layer 242 is 100 nm in the wavelength range of 360 nm to 460 nm. The reflectivity of the wavelength greater than 500 nm corresponding to green light and red light is relatively low, e.g., less than 35%. That is, the second DBR layer 242 can reflect most of the blue light, and pass the red light and green light.

[0029] In combination Figure 3 and Figure 4 In this embodiment, for N equal to 15, the total thickness of the first DBR layer 241 is 1084 nm, and the total thickness of the second DBR layer 242 is 911 nm.

[0030] Since the first DBR layer 241 and the second DBR layer 242 can improve the light emitting efficiency of the light emitting mesas 231, 232 and 233, the same mesa size of each light emitting mesa can be achieved.

[0031] It can be understood that, in some embodiments, the first light emitting mesa emits red light, the second light emitting mesa emits blue light, and the third light emitting mesa emits green light. Therefore, the first DBR layer is configured to reflect the blue light emitted by the second light emitting mesa and the green light emitted by the third light emitting mesa, and to pass the red light emitted by the first light emitting mesa. The second DBR layer is configured to reflect the green light emitted by the third light emitting mesa, and to pass the red light and blue light emitted by the first light emitting mesa or the second light emitting mesa, respectively. Accordingly, the parameters of the first DBR layer and the second DBR layer can be calculated according to the wavelengths of the corresponding light to be reflected according to equations (1) and (2).

[0032] Referring again to Figure 2In some embodiments, the first light emitting mesa 231 includes a first mesa structure 2311, a first passivation layer 2312 formed on sidewalls of the first mesa structure 2311, and a first top transparent layer 2313 formed on a surface of the first passivation layer 2312 and covering a top surface of the first mesa structure 2311. The first mesa structure 2311 is configured to emit light. For example, the first mesa structure 2311 further includes a first semiconductor layer, a light emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light emitting layer. The first top transparent layer 2313 is electrically connected to a top surface of the first mesa structure 2311. In some embodiments, the first light emitting mesa 231 further includes a first bottom transparent layer 2314 disposed on a bottom of the first mesa structure 2311. The first bottom transparent layer 2314 is configured to bond with the IC backplane 210 through the bonding layer 220. In some embodiments, the first passivation layer 2312 is further disposed on sidewalls of the bonding layer 220 and the first bottom transparent layer 2314.

[0033] The IC backplane 210 can include a set of three bottom pads to be electrically connected to each of the light emitting mesas, respectively. For example, the first bottom pad 211 is electrically connected to the bonding layer 220 to further connect with the first light emitting mesa 231. In some embodiments, a conductive structure (not shown) is further disposed to selectively connect a bottom of the second light emitting mesa 232 and a bottom of the third light emitting mesa 233 to a second bottom pad (not shown) and a third bottom pad (not shown) of the IC backplane 210, respectively.

[0034] In some embodiments, the second light emitting mesa 232 includes a second mesa structure 2321, a second passivation layer 2322 formed on sidewalls of the second mesa structure 2321, and a second top transparent layer 2323 formed on a surface of the second passivation layer 2322 and covering a top surface of the second mesa structure 2321. The second mesa structure 2321 is configured to emit light. For example, the second mesa structure 2311 further includes a first semiconductor layer, a light emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light emitting layer. The second top transparent layer 2323 is electrically connected to a top surface of the second mesa structure 2321. In some embodiments, the second light emitting mesa 232 further includes a second bottom transparent layer 2324 disposed on a bottom of the second mesa structure 2321. The second bottom transparent layer 2324 is configured to electrically connect the bottom of the second mesa structure 2321 and the second bottom pad through the conductive structure.

[0035] The third light emitting mesa 232 includes a third mesa structure 2331, a third passivation layer 2332 formed on sidewalls of the third mesa structure 2331, and a third top transparent layer 2333 formed on a surface of the third passivation layer 2332 and covering a top surface of the third mesa structure 2331. The third mesa structure 2331 is configured to emit light. For example, the third mesa structure 2331 further includes a first semiconductor layer, a light emitting layer formed on the first semiconductor layer, and a second semiconductor layer formed on the light emitting layer. The third top transparent layer 2333 and a top surface of the third mesa structure 2331 are electrically connected. In some embodiments, the third light emitting mesa 233 further includes a third bottom transparent layer 2334 disposed on a bottom of the third mesa structure 2331. The third bottom transparent layer 2334 is configured to electrically connect the bottom of the third mesa structure 2331 and a third bottom pad through a conductive structure.

[0036] In some embodiments, the first top transparent layer 2313, the first bottom transparent layer 2314, the second top transparent layer 2323, the second bottom transparent layer 2324, the third top transparent layer 2333, and the third bottom transparent layer 2334 are TCO (transparent conductive oxide) films, such as ITO (indium tin oxide) films, AZO (antimony-doped zinc oxide) films, ATO (antimony-doped tin oxide) films, FTO (fluorine-doped tin oxide) films, and the like.

[0037] In some embodiments, the micro LED 200 further includes a top conductive layer 250 formed on the third light emitting mesa 233. In some embodiments, the top conductive layer 250 is a TCO (transparent conductive oxide) film, such as an ITO (indium tin oxide) film, an AZO (antimony-doped zinc oxide) film, an ATO (antimony-doped tin oxide) film, an FTO (fluorine-doped tin oxide) film, and the like.

[0038] Figure 5 A structural diagram showing a top view of a display micro LED display panel 500 is shown in accordance with some embodiments of the present disclosure. Referring to FIG. 5, the display micro LED display panel 500 includes a plurality of micro LEDs 200 arranged in an array. Each of the micro LEDs 200 includes a first light emitting mesa 210, a second light emitting mesa 220, and a third light emitting mesa 230. Figure 5The microLED display panel 500 includes a microLED array 510 and an IC (integrated circuit) backplane 520. The microLED array 510 is located on the IC backplane 520 to form the image display area of ​​the microLED display panel 500. The remaining area of ​​the IC backplane 520 not covered by the microLED array 510 is formed as a non-functional area. The IC backplane 520 is formed on the back side of the microLED array 510 and extends partially beyond the microLED array 510, i.e., partially not covered by the microLED array 510. The microLED array 510 includes a plurality of microLEDs 511 disposed in the array. The IC backplane 520 is configured to control the plurality of microLEDs 511. The IC backplane 520 may include a bottom pad array (not shown) corresponding to the microLED array 510. The bottom pad array includes a plurality of bottom pads (e.g., including...). Figure 2 The bottom pads 211 in the array consist of a set of three bottom pads, and each set of bottom pads corresponds to a microLED 511. One of the microLEDs is electrically connected to one of the bottom pads in the array of bottom pads.

[0039] In some implementations, the top conductive layer of the microLED (e.g., Figure 2 The top conductive layer 250 is interconnected with each of the plurality of microLEDs. That is, the top conductive layer is continuously formed on the top of the microLED array 510 and connected to each microLED 511.

[0040] In some implementations, the IC backplane 520 also includes a top connection pad 521. The top conductive layer is connected to the top connection pad 521 and can also be connected to external circuitry.

[0041] Each microLED (e.g., microLED 200) in this document has a very small volume. MicroLEDs can be applied to microLED display panels. For example, microLED display panel 500 has a very small light-emitting area, such as 1mm × 1mm, 3mm × 5mm, etc. In some embodiments, the light-emitting area is the area of ​​the microLED array in the microLED display panel. The microLED display panel includes one or more microLEDs forming a pixel array in which the microLEDs serve as pixels, such as a 1600 × 1200 pixel array, a 680 × 480 pixel array, or a 1920 × 1080 pixel array. The diameter of each microLED is in the range of approximately 200nm to 2μm. An IC backplane, such as IC backplane 520, is formed on the back of the microLED array 510 and is electrically connected to the microLED array 510. IC backplane 520 acquires signals, such as image data, from the outside via signal lines to control the corresponding microLED 511 to emit or not emit light.

[0042] Those skilled in the art can understand that the micro LED display panel is not limited by the above structure, and can include more or fewer components than those illustrated, or some components can be combined, or different components can be used.

[0043] It should be noted that the relational terms herein, such as "first" and "second", are used only to distinguish one entity or operation from another, and do not require or imply that any actual relationship or order exists between the entities or operations. In addition, the words "comprise", "have", "contain" and "contain" and other similar forms are intended to be equivalent in meaning and are open, and one or more items behind any of these words does not mean that it is an exhaustive list of one or more items, or does not mean that it is limited to one or more items listed.

[0044] Unless specifically stated otherwise, the term "or" used herein includes all possible combinations, except where infeasible. For example, if a database is said to include A or B, then, unless specifically stated otherwise or infeasible, the database can include A, or B, or A and B. The second example is that if it is stated that a database can include A, B or C, then, unless specifically stated otherwise or infeasible, the database can include A, or B, or C, or A and B, or A and C, or B and C, or A and B and C.

[0045] In the foregoing description, embodiments have been described with reference to a number of specific details that can vary from implementation to implementation. Certain adjustments and modifications can be made to the described embodiments. Other embodiments can be apparent to those skilled in the art in view of the foregoing description and practice of the disclosed application. The specification and examples are intended to be illustrative only, with the true scope and spirit of the application being indicated by the following claims. It is also intended that the order of the steps shown in the figures is for illustrative purposes only, and is not intended to be limited to any particular order of steps. Thus, those skilled in the art can understand that the steps can be performed in a different order when implementing the same method.

[0046] In the drawings and specification, there have been disclosed exemplary embodiments. However, many variations and modifications can be made to these embodiments. Therefore, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation.

Claims

1. A micro-LED, comprising: Comprising: two or more light emitting mesas arranged in a vertical direction from top to bottom; and at least one Distributed Bragg Reflection (DBR) layer formed between adjacent light emitting mesas and configured to reflect light emitted by a light emitting mesa of the adjacent light emitting mesas arranged above the DBR layer and to pass light emitted by one or more light emitting mesas arranged below the DBR layer; the DBR layer comprising a plurality of first layers and a plurality of second layers, the plurality of first layers and the plurality of second layers being alternately layered, a first material of the first layers being SiO2 and a second material of the second layers being amorphous silicon (a-Si), a total number of the first layers and the second layers being N, N being a positive odd number, so that the first layers at both ends of the DBR layer are respectively combined with the adjacent light emitting mesas.

2. The micro-LED of claim 1, wherein, A first refractive index of the plurality of first layers and a second refractive index of the plurality of second layers are different.

3. The micro-LED of claim 2, wherein, A first thickness of one of the plurality of first layers is determined based on the first refractive index and a wavelength; and A second thickness of one of the plurality of second layers is determined based on the second refractive index and the wavelength, wherein the wavelength is within a wavelength range to be reflected by the DBR layer.

4. The micro-LED of claim 3, wherein, The first thickness is obtained by and the second thickness is obtained by ​ wherein represents the first thickness, represents the first refractive index, represents the second thickness, represents the second refractive index, represents the wavelength.

5. The micro-LED of claim 4, wherein, The wavelength is adjustable to obtain a stop band B of the DBR layer based on the relationship.

6. The micro-LED of claim 5, wherein, The stopband is 100 nm.

7. The micro-LED of any one of claims 1-6, wherein, The two or more light emitting mesas comprise: a first light emitting mesa configured to emit red light, a second light emitting mesa configured to emit green light and arranged above the first light emitting mesa; and a third light emitting mesa configured to emit blue light and arranged above the second light emitting mesa, wherein the at least one DBR layer comprises: a first DBR layer arranged between the first light emitting mesa and the second light emitting mesa and configured to pass red light and reflect green light and blue light; and a second DBR layer arranged between the second light emitting mesa and the third light emitting mesa and configured to reflect blue light and pass red light and green light.

8. The micro-LED of any one of claims 1-6, wherein, The two or more light emitting mesas comprise: a first light emitting mesa configured to emit red light, a second light emitting mesa configured to emit blue light and arranged above the first light emitting mesa; and a third light emitting mesa configured to emit green light and arranged above the second light emitting mesa, wherein the at least one DBR layer comprises: a first DBR layer arranged between the first light emitting mesa and the second light emitting mesa and configured to pass red light and reflect blue light and green light; and a second DBR layer arranged between the second light emitting mesa and the third light emitting mesa and configured to reflect green light and pass red light and blue light. 9.The micro LED of claim 1, wherein, Each of the two or more light emitting mesas comprises: a mesa structure for light emission; a passivation layer formed on a sidewall of the mesa structure; a top transparent layer formed on a surface of the passivation layer and covering a top surface of the mesa structure, the top transparent layer and the mesa structure being electrically connected at a top portion; and a bottom transparent layer formed at the bottom of the mesa structure, the bottom transparent layer and the bottom of the mesa structure being electrically connected.

10. A micro LED display panel, characterized in that, comprising: an Integrated Circuit (IC) backplane comprising a bottom pad array, the bottom pad array comprising a plurality of bottom pads; and a micro LED array formed on the IC backplane, the micro LED array comprising a plurality of micro LEDs according to any one of claims 1-9, wherein one micro LED of the plurality of micro LEDs is electrically connected with a group of bottom pads of the plurality of bottom pads.

11. The micro LED display panel of claim 10, wherein, The micro LED further comprises a top conductive layer formed at the top of the micro LED, and respective top conductive layers of the plurality of micro LEDs are connected to each other.

12. The micro LED display panel of claim 11, wherein, The IC backplane further comprises a top connection pad, and the top conductive layer is connected with the top connection pad of the IC backplane.

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