Test method and device for batch detection of abnormal electrical signal parameters of flash memory chips

Abstract

The invention discloses a test method and device for batch detection of abnormal electric signal parameters of flash memory chips, and the device comprises a flash memory chip test frame which is used for carrying out the feeding and discharging operation of the to-be-tested flash memory chips, and a peripheral circuit is provided with pin test points corresponding to the to-be-collected electric signal parameters; the test point selection switch is used for selecting electrical signal parameters needing to be tested; the electric signal display module is set to input the electric signal parameters selected by the test point selection switch to a digital display volt-ammeter of a corresponding test path for display and distinguishing marking; the OCR image recognition processing module is used for recognizing and analyzing the test data of the digital display image of each channel and judging whether the test data is abnormal or not; and the abnormity alarm output module is used for outputting a test result of whether the electric signal parameter test of the flash memory chip is abnormal and giving an alarm. The electric signal parameters of the flash memory chip can be measured in batches, and whether the electric signal parameters of the flash memory chip are abnormal or not is judged by combining the characteristic parameter range of the electric signal of the chip specification.

Description

Technical Field

[0001] The present application relates to the technical field of flash memory chips and non-volatile memory, and in particular, to a batch electrical signal testing technology and device for flash memory chips and non-volatile memory. Background Art

[0002] Flash memory chips are a type of non-volatile memory used to store data and are widely used in a variety of electronic devices. During the manufacturing process, there are various possible problems with the circuits of flash memory chips, such as short circuits, open circuits and other packaging problems, which can cause the electrical functions of the chip to fail or even malfunction. During the production process of flash memory chips, in order to ensure that their electrical signal parameters work within the specified range, it is necessary to perform batch testing of the electrical signal parameters of flash memory chips to detect these problems. Due to the complexity of flash memory chips and the need for large-scale production, traditional manual testing methods cannot meet the requirements of efficient and accurate testing.

[0003] On the other hand, after the flash memory chip packaging test is completed, the tested flash memory chip is usually shipped as a finished product to the module factory, and the module factory will surface mount the above flash memory chip, controller chip and other components in the SMT workshop. Usually, if the flash memory chip has defects (such as internal short circuit, open circuit, too many new bad blocks), it will have a great impact on the yield rate and manufacturing cost of solid-state hard disk storage products.

[0004] The traditional method is to test the chip manually or semi-automatically, usually by using a flash memory controller plus a flash memory test socket solution for screening and testing. When the flash memory chip fails to open the card on the chip test socket (such as the Flash ID cannot be read, the card capacity is larger than the actual chip capacity, etc.), the traditional method generally opens the flash memory chip a second time and confirms the failure scenario, and then classifies the above abnormal flash memory chip as a defective product. However, actual business needs usually require the defective product to be clearly located as a packaging problem or a problem with the flash memory wafer itself.

[0005] Therefore, a test method and device for batch detecting abnormal electrical signal parameters of flash memory chips is needed, which can measure the electrical signal parameters of flash memory chips in batches and judge whether the flash memory chips have abnormal electrical signal parameters (such as short circuit, open circuit, etc.) in combination with the characteristic parameter range of the electrical signal in the chip specification. Summary of the invention

[0006] The purpose of the present application is to provide a test method and device for batch detection of abnormal electrical signal parameters of flash memory chips, so as to improve the technical problem that the current technology cannot analyze and detect whether there are abnormal electrical signal parameters of flash memory chips, and can only classify them as defective products through card opening failure.

[0007] At the same time, the present application can solve the technical problem that after the flash memory chip is returned for repair at the SMT factory or the client, retesting by screening the test rack or multimeter can only test the bad card opening phenomenon, and there is no electrical signal abnormality analysis function, which leads to a large variation in the electrical signal parameter range and inaccurate measurement.

[0008] Furthermore, the present application can solve the technical problems that when a multimeter measures characteristic electrical signals one by one, it is still inconvenient to load and unload flash memory chips, it cannot detect multi-channel electrical signal parameter scenarios at the same time, it cannot automatically determine whether the electrical signal parameters are within the parameter range defined in the specification, and it is impossible to perform batch deployment tests and simultaneous online analysis tests of multiple electrical signals and multiple channels.

[0009] In order to solve the above technical problems, the present application adopts the following technical solutions: A test device for batch detecting abnormal electrical signal parameters of flash memory chips, characterized in that it mainly comprises: A flash memory chip test rack includes a main control chip, a test socket with an interface consistent with the specifications of the flash memory chip to be tested, and a peripheral circuit, which is used to load and unload the flash memory chip to be tested, and the peripheral circuit is provided with pin test points corresponding to the electrical signal parameters to be collected; The test point selection switches are connected to the test points of each pin of the flash memory screening test rack to form a test path for selecting the electrical signal parameters to be tested; The electric signal display module mainly includes a number of digital voltage and current meters connected to the test point selection switches, and is configured to input the electric signal parameters selected by the test point selection switches into the digital voltage and current meters of the corresponding test paths, display them and distinguish them by marking them; The OCR image recognition processing module is used to collect the digital display images of the current and voltage tested on each channel, identify and analyze the test data of the digital display images of each channel, and determine whether they are abnormal; And an abnormal alarm output module is used to output the test result of whether the flash memory chip electrical signal parameter test is abnormal and display the test point number.

[0010] In the above technical solution, a plurality of flash memory chip test sockets are provided to form independent test devices for batch detecting abnormal electrical signal parameters of flash memory chips.

[0011] In the above technical solution, the flash memory chip test socket is configured to load and unload the flash memory chip to be tested by flipping the cover or pressing down.

[0012] In the above technical solution, the flash memory chip to be tested is configured to deploy the test pin signals corresponding to each electrical signal parameter on each pin test point of the pad of the PCB of the flash memory screening test frame according to the type of electrical signal parameters to be tested.

[0013] In the above technical solution, the pin test points on the flash memory screening test rack include at least two of the following: Vcc pin test point, Vccq voltage pin test point, standby current test point, input leakage current I LI , Data read current I cc , Input high level voltage V IH , Input low level voltage V IL、 Output high level voltage V OH , Input low level voltage V OL .

[0014] In the above technical solution, the test point selection switch is set to be open or closed to select whether to test the corresponding electrical signal parameters.

[0015] In the above technical solution, the electrical signal display module includes an LED digital voltage and current meter, which is used to receive and display the selected electrical signal parameters and distinguish the path numbers.

[0016] In the above technical solution, the OCR image recognition processing module is configured to collect the digital display image on the LED digital display voltage and current meter, parse the test data of the digital display image of each channel, and perform judgment processing including parsing the current and voltage values ​​during the test, and / or calculating the resistance value between the two pins.

[0017] In the above technical solution, the abnormal alarm output module is configured to record and report the test results through a flashing light or a serial port log.

[0018] A test method for batch detecting abnormal electrical signal parameters of flash memory chips, characterized by comprising the following steps: S01: The tester confirms the type of electrical signal parameters that need to be monitored in this round of flash memory chip testing; S02: Setting failure judgment conditions according to the type range of electrical signal parameters corresponding to the flash memory chip specification to be tested; S03: Then, the flash memory chip to be tested is mounted on the flash memory test socket, powered on and the corresponding test point switches to be monitored are turned on to form a test path; S04: Electrical signal display: The LED digital display voltage and current meter display module corresponding to each channel starts to work, and displays the electrical signal parameters of the test point corresponding to the test channel in real time; S05: OCR image recognition processing: photograph, store, recognize and analyze the voltage and current values ​​tested by the LED digital display meter of each channel, convert the detected electrical signal parameters into parameter values ​​corresponding to the test points, and then compare the parameter values ​​with the pre-set electrical signal parameter value range; S06: Abnormal alarm output: If the electrical signal parameter is in an extreme value range, such as the resistance value is 0, it will directly report that there is a short circuit at the test point; if the voltage value is not within the set parameter range, it will prompt an alarm such as abnormal voltage value and determine that there is an abnormality in the electrical signal test of the path, and the flash memory chip has a short circuit, open circuit or other electrical signal abnormalities; otherwise, it is determined that the electrical signal parameter test of the chip has passed.

[0019] In the above technical solution, step S03 can synchronously test multiple flash memory chips to be tested, and load the multiple flash memory chips to be tested on multiple flash memory test sockets one by one, thereby forming batch-scale testing and improving work efficiency.

[0020] In the above technical solution, step S03 can synchronously test different electrical parameters of multiple flash memory chips to be tested, load multiple flash memory chips to be tested on multiple flash memory test sockets one by one, power on and turn on the corresponding test point switches that need to be monitored, so as to form diversified batch and scale tests and improve work efficiency.

[0021] Compared with the prior art, the beneficial effects of this application are: The design of an electrical parameter test circuit that is simple and easy to build allows for convenient selection of different electrical parameters to be tested through a test point selection switch, in order to improve the technical problem that current technology cannot analyze and detect whether there are electrical signal parameter anomalies in the flash memory chip, and can only classify it as a defective product through card opening failure.

[0022] The electrical signal display module displays various electrical parameters by category, and uses OCR technology to identify, analyze, compare and automatically alarm abnormalities, solving the technical problem that conventional technologies do not have the function of analyzing electrical signal abnormalities, resulting in large variations in the range of electrical signal parameters and inaccurate measurements.

[0023] The flash memory chip to be tested can be loaded and unloaded by flipping the cover or pressing down, and can be flexibly switched by selecting the switch to realize simultaneous testing of multiple chips, simultaneous testing of different parameters or the same parameters. This can solve the technical problems of inconvenient loading and unloading of flash memory chips when measuring characteristic electrical signals one by one with a multimeter, inability to simultaneously detect multi-channel electrical signal parameter scenarios, inability to automatically determine whether the electrical signal parameters are within the parameter range defined in the specification, inability to perform batch deployment testing and simultaneous online analysis and testing of multiple electrical signals and multiple channels. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0025] Figure 1 This is a structural block diagram of a test device for batch detecting abnormal electrical signal parameters of flash memory chips according to an embodiment of the present application.

[0026] Figure 2 The test method and device for batch detecting abnormal electrical signal parameters of flash memory chips in the embodiment of the present application adopt the BGA132-ONFI 4.x flash memory chip pin definition diagram.

[0027] Figure 3 This is a flowchart of the testing method and device for batch detecting abnormal electrical signal parameters of flash memory chips according to an embodiment of the present application.

[0028] Figure 4 This is a flow chart of a test method for batch detecting abnormal electrical signal parameters of flash memory chips according to an embodiment of the present application. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0030] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0031] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0032] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the application is usually placed when in use. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0033] In addition, the terms "horizontal", "vertical", "overhanging" and the like do not mean that the components are required to be absolutely horizontal or overhanging, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0034] In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0035] In the present application, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0036] The features and performance of the present application are further described in detail below in conjunction with the embodiments.

[0037] Example 1 In view of the technical defects of the prior art, the present application proposes a test method and device for batch detecting abnormal electrical signal parameters of flash memory chips.

[0038] Specifically, if Figure 1 As shown, the device involved in the present invention mainly comprises five parts: a flash memory chip test rack 100, a test point selection switch 200, an electrical signal display module 300, an OCR image recognition processing module 400 and an abnormal alarm output module 500.

[0039] Among them, the flash memory chip test rack 100 is mainly composed of a main control chip 101, a flash memory chip test socket 102 and a peripheral circuit. The core chip loaded in the flash memory chip test socket 102 on the test rack 100 is consistent with the specifications of the flash memory chip to be tested, and the flash memory chip to be tested (not shown) can be loaded and unloaded by flipping or pressing down. In this embodiment, the BGA IC flash memory chip is preferably loaded as the flash memory chip to be tested in the flash memory chip test socket 102. The optional flash memory chip to be tested can also be eMMC, UFS or BGA SSD. In a preferred embodiment, the flash memory chip test rack 100 is expanded by batch replication of one unit, and each flash memory chip test rack 100 independently forms an independent test device for detecting abnormal electrical signal parameters of the flash memory chip, thereby being used for batch detection.

[0040] The BGA IC flash memory chip can be easily installed on the flash memory chip test socket 102 for testing. Figure 2 As shown in the figure, the pin definition of a specification of the above-mentioned BGA IC flash memory chip is described. Through all the predetermined electrical signal parameter types that need to be tested, the above-mentioned pin signals that need to be tested are deployed on the pad pin test points of the PCB of the flash memory screening test frame 100. For example, in this example, if the Vcc and Vccq voltages need to be tested, the Vccq signal corresponding to the above-mentioned BGA132-ONFI 4.X pin model is led to the pad pin test point of the PCB. If the standby current Istandby needs to be tested, it is also connected to the standby current test point. Figure 2 The pins marked in yellow are the channel pins of Flash. The Vcc and Vccq voltages are the voltages connecting the Vcc pin to the ground Vss.

[0041] The test point selection switch 200 is a switch that selects the corresponding type of electrical signal parameter that the user needs to test. The test point selection switches 200 are all connected to the pad pin test points of the PCB of the set flash memory screening test stand 100. The test point selection switches 200 are initially in a normally closed state. If the user believes that the electrical signal parameter needs to be monitored, the user needs to press the corresponding test point selection switch; otherwise, the switch is closed. Figure 1 In the embodiment shown, a Vcc voltage test point switch, a Vccq voltage test point switch, a standby current test point switch, and other possible electrical signal parameters (such as input leakage current I LI , Data read current I cc , Input high level voltage V IH , Input low level voltage V IL、 Output high level voltage V OH , Input low level voltage V OL )Test point switch.

[0042] The electric signal display module 300 mainly includes a number of LED digital display voltage and current meters connected to the test point selection switches 200. The LED digital display voltage and current meter integrates a data acquisition module and a data display module. The function of the electric signal display module 300 is to input the electric signal parameters selected by the test point selection switch 200 into the LED digital display voltage and current meter of the corresponding path for display and mark the path number.

[0043] The OCR image recognition processing module 400 is mainly used to start taking pictures and process the test display images on the LED digital display voltage and current meter on each channel, identify and analyze the test data of each channel and process them. The OCR image recognition processing module 400 is set in the form of a conventional micro lens, and can collect the test display images on the LED digital display voltage and current meter. It can be set one-to-one above the display interface of the LED digital display voltage and current meter.

[0044] For example, the actual measured Vccq voltage is compared with the preset Vccq standard voltage range to determine whether the test value is within the preset range; for another example, some test points need to test the resistance between two pin signals. In this case, the LED digital voltage and current meter needs to take a photo, and then analyze the voltage and current values ​​in the picture through the OCR module to analyze the current and voltage values ​​during the test, and then calculate the resistance value between the two pins through Ohm's law.

[0045] The abnormal alarm output module 500 is mainly used to output the result of whether the flash memory chip electrical signal parameter test passes and display the test point number. The module can record the test results through flashing lights or serial port logs and report them to the host or display.

[0046] Example 2 like Figure 3 As shown, based on Example 1, this example shows a typical flash memory chip electrical signal parameter abnormality testing method.

[0047] First, the user needs to confirm the type of electrical signal parameters that need to be monitored in this round of flash memory chip testing, such as Vcc voltage, Vccq voltage, standby current Istandby, etc.; Secondly, the failure judgment condition needs to be set according to the corresponding electrical signal parameter type range specified in the flash memory chip specification or explicitly promised, such as the Vccq of a flash memory chip to be tested is set to 1.14V~1.26V, and the typical value is 1.2V; Then install the flash memory chip to be tested on the interface or socket of the flash memory test socket, power it on and turn on the corresponding test point switch that needs to be monitored; Subsequently, each corresponding LED digital display voltage and current meter display module starts working, and displays the electrical signal parameters of the test point in real time. At the same time, the OCR image recognition processing module starts to take pictures, store, identify and analyze the voltage and current values ​​of the LED digital display test of each channel, and convert the detected electrical signal parameters into parameter values ​​corresponding to the test point, and then compare the parameter values ​​with the pre-set electrical signal parameter value range. If the electrical signal parameter is in an extreme value range, such as a resistance value of 0, it will directly report that the test point has a short circuit; if the voltage value is not within the set parameter range, it will prompt an alarm such as abnormal voltage value and determine that the electrical signal test of the channel is abnormal, and the flash memory chip has a short circuit, open circuit or other electrical signal abnormalities. Otherwise, it is determined that the electrical signal parameter test of the chip has passed.

[0048] Example 3 Based on Examples 1 and 2, this example shows the process of the above flash memory chip electrical signal testing method, specifically as follows Figure 1 and Figure 4 shown.

[0049] The figure describes the situation where there are multiple modules involved in the test method working together, mainly including the test point selection module, data acquisition module, data display module, image data processing module and defective product judgment module. The test point selection module can select the test by the user selecting the test switch; the LED digital display voltage and current meter integrates the data acquisition module and the data display module; the data acquisition module uses the built-in digital-to-analog conversion chip to collect the current and voltage values ​​on the circuit through the chip circuit, and collects the electrical signal on the flash chip test rack 100; the data display module displays the test data of the corresponding path through the LED digital display function; the image module is used to analyze and convert the detected electrical signal parameters into electrical signal parameters that may not be directly measured on the corresponding path; the defective product judgment module directly uses the pre-set electrical signal parameter range and combines it with the basic electrical theory to judge whether there is a short circuit, open circuit or abnormal scenario that is not within the voltage parameter range between the two test pins of the chip.

[0050] Preferably, multiple flash memory chip test racks 100 are loaded and unloaded by flipping or pressing down, and the flash memory chips to be tested are loaded. By flexibly switching through the selection switch, multiple chips can be tested simultaneously, and different parameters or the same parameters can be tested in batches at the same time.

[0051] The embodiments described above are part of the embodiments of the present application, rather than all of the embodiments. The detailed description of the embodiments of the present application is not intended to limit the scope of the present application for protection, but merely represents the selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present application.

Claims

1. A test device for batch detection of abnormal electrical signal parameters of flash memory chips, characterized in that Mainly include: A flash memory chip test rack includes a main control chip, a test socket with an interface consistent with the specifications of the flash memory chip to be tested, and a peripheral circuit, which is used to load and unload the flash memory chip to be tested, and the peripheral circuit is provided with pin test points corresponding to the electrical signal parameters to be collected; The test point selection switches are connected to the test points of each pin of the flash memory screening test rack to form a test path for selecting the electrical signal parameters to be tested; The electric signal display module mainly includes a number of digital voltage and current meters connected to the test point selection switches, and is configured to input the electric signal parameters selected by the test point selection switches into the digital voltage and current meters of the corresponding test paths, display them and distinguish them by marking them; The OCR image recognition processing module is used to collect the digital display images of the current and voltage tested on each channel, identify and analyze the test data of the digital display images of each channel, and determine whether they are abnormal; And an abnormal alarm output module is used to output the test result of whether the flash memory chip electrical signal parameter test is abnormal and display the test point number.

2. The test device for batch detecting abnormal electrical signal parameters of flash memory chips according to claim 1 is characterized in that The flash memory chip test socket is configured to load and unload the flash memory chip to be tested by flipping the cover or pressing down.

3. The test device for batch detecting abnormal electrical signal parameters of flash memory chips according to claim 1 is characterized in that The flash memory chip to be tested is configured to deploy the test pin signals corresponding to the electrical signal parameters on the pin test points of the pads of the PCB of the flash memory screening test frame according to the type of electrical signal parameters to be tested.

4. The test device for batch detecting abnormal electrical signal parameters of flash memory chips according to claim 1, characterized in that The pin test points on the flash memory screening test frame at least include a Vcc pin test point, a Vccq voltage pin test point, and a standby current test point.

5. The test device for batch detecting abnormal electrical signal parameters of flash memory chips according to claim 1, characterized in that The test point selection switch is set to be open or closed to select whether to test the corresponding electrical signal parameters.

6. The test device for batch detecting abnormal electrical signal parameters of flash memory chips according to claim 1, characterized in that The OCR image recognition processing module is configured to collect the digital display image on the LED digital display voltage and current meter, analyze the test data of the digital display image of each channel, and perform judgment processing including analyzing the current and voltage values ​​during the test, and / or calculating the resistance value between two pins.

7. The test device for batch detecting abnormal electrical signal parameters of flash memory chips according to claim 1, characterized in that The abnormal alarm output module is set to record and report the test results through flashing lights or serial port logs.

8. A test method for batch detection of abnormal electrical signal parameters of flash memory chips, characterized in that The steps include: S01: The tester confirms the type of electrical signal parameters that need to be monitored in this round of flash memory chip testing; S02: Setting failure judgment conditions according to the type range of electrical signal parameters corresponding to the flash memory chip specification to be tested; S03: Then, the flash memory chip to be tested is mounted on the flash memory test socket, powered on and the corresponding test point switches to be monitored are turned on to form a test path; S04: Electrical signal display: The LED digital display voltage and current meter display module corresponding to each channel starts to work, and displays the electrical signal parameters of the test point corresponding to the test channel in real time; S05: OCR image recognition processing: photograph, store, recognize and analyze the voltage and current values ​​tested by the LED digital display meter of each channel, convert the detected electrical signal parameters into parameter values ​​corresponding to the test points, and then compare the parameter values ​​with the pre-set electrical signal parameter value range; S06: Abnormal alarm output: If the electrical signal parameter is in an extreme value range, such as the resistance value is 0, it will directly report that there is a short circuit at the test point; If the voltage value is not within the set parameter range, an alarm such as abnormal voltage value is prompted and it is determined that the path electrical signal test is abnormal, and the flash memory chip has a short circuit, open circuit or other electrical signal abnormalities; Otherwise, it is determined that the electrical signal parameter test of the chip has passed.

9. The test method for batch detecting abnormal electrical signal parameters of flash memory chips according to claim 8, characterized in that Step S03 is configured to synchronously test a plurality of flash memory chips to be tested, and the plurality of flash memory chips to be tested are respectively loaded one by one on a plurality of flash memory test sockets.

10. The test method for batch detecting abnormal electrical signal parameters of flash memory chips according to claim 8, characterized in that Step S03 synchronously tests different electrical parameters of multiple flash memory chips to be tested. The multiple flash memory chips to be tested are respectively loaded one by one on multiple flash memory test sockets, and the corresponding test point switches to be monitored are powered on and turned on.

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