Lower electrode assembly and semiconductor process chamber

Abstract

The application discloses a lower electrode assembly and a semiconductor process chamber, and belongs to the technical field of semiconductor processing. The lower electrode assembly is arranged in a chamber body of the semiconductor process chamber, and comprises a pedestal, at least two adapter parts and at least two filters. The pedestal is provided with a heating layer, the heating layer comprises at least two heating zones, and the at least two adapter parts correspond to the at least two heating zones one by one. The at least two filters correspond to the at least two heating zones one by one, and each filter is electrically connected to the corresponding heating zone through the corresponding adapter part. The scheme can effectively shorten the distance between the filter and the pedestal, effectively reduce the degree of radio frequency mutual coupling between the adapter parts, effectively avoid the concentrated distribution of the adapter parts, and further avoid the situation of unilateral concentrated feeding, so as to further reduce the degree of radio frequency mutual coupling between the adapter parts, thereby avoiding the situation of poor process uniformity.

Description

Technical Field

[0001] This application belongs to the field of semiconductor processing technology, specifically relating to a lower electrode assembly and a semiconductor process chamber. Background Technology

[0002] The semiconductor process chamber mainly consists of an upper electrode assembly, a lower electrode assembly, and the chamber body. The lower electrode assembly, as the primary RF feed structure, excites gas to form plasma and controls its direction of movement. The substrate is the core component of the lower electrode assembly; one of its important functions is zoned heating. By utilizing the temperature of different areas, the process rate and uniformity of different regions of the wafer can be individually controlled or adjusted. Since the lower electrode assembly operates in an RF environment, filters are required to remove RF power from the semiconductor process chamber, preventing RF from entering the substrate's heating power supply and affecting its operation.

[0003] In existing technology, filters are electrically connected to multiple heating zones of the base via cables to prevent radio frequency (RF) signals from entering the heating power supply of the base. However, since the filter is located on one side of the RF feed module and all cables are concentrated on the filter, a single-sided concentrated feed situation is formed. As a result, during the use of the semiconductor process chamber, RF coupling between the cables is severe, which can easily lead to poor process uniformity. Summary of the Invention

[0004] The purpose of this application is to provide a lower electrode assembly and a semiconductor process chamber that can solve the problem of poor process uniformity caused by severe radio frequency coupling between cables during use in related technologies.

[0005] In a first aspect, embodiments of this application provide a lower electrode assembly for being disposed within the chamber body of a semiconductor process chamber, the lower electrode assembly comprising:

[0006] The base is provided with a heating layer, which includes at least two heating zones;

[0007] At least two connecting parts correspond one-to-one with the at least two heating zones;

[0008] At least two filters are provided, each corresponding to one of the at least two heating zones, and each filter is electrically connected to its corresponding heating zone via a corresponding adapter.

[0009] Secondly, embodiments of this application also provide a semiconductor process chamber, including a chamber body, an upper electrode assembly and the aforementioned lower electrode assembly, wherein the lower electrode assembly is disposed within the chamber body, and the upper electrode assembly, the chamber body and the lower electrode assembly are connected to form a process space.

[0010] In this embodiment, the lower electrode assembly is disposed within the main body of the semiconductor process chamber. Specifically, both the base and the filter of the lower electrode assembly are located within the main body of the semiconductor process chamber. The filter and the heating area are electrically connected via a transition section. This effectively shortens the distance between the filter and the base, thereby effectively shortening the length of the transition section between the filter and the heating area of ​​the base, and thus effectively reducing the degree of radio frequency coupling between the transition sections. Furthermore, the lower electrode assembly includes at least two filters, each corresponding to at least two heating areas. Each filter is electrically connected to its corresponding heating area via a corresponding transition section. This allows each heating area to be equipped with its own filter, effectively avoiding concentrated distribution of transition sections and preventing one-sided concentrated feed, thereby further reducing the degree of radio frequency coupling between the transition sections. This improves the consistency of the process rate, thus avoiding process misalignment and poor process uniformity. Attached Figure Description

[0011] Figure 1 This is a cross-sectional view of the semiconductor process chamber disclosed in the embodiments of this application;

[0012] Figure 2 This is an exploded view of the lower electrode assembly disclosed in the embodiments of this application (hiding the radio frequency feed module, support ring and cooling device).

[0013] Figure 3 This is a diagram showing the connection relationship between the adapter disclosed in the embodiments of this application and the heating zone and the filter, respectively;

[0014] Figure 4 This is a schematic diagram showing the distribution of the feed points of each heating zone and the connection points of each filter as disclosed in the embodiments of this application;

[0015] Figure 5 This is a schematic diagram showing the distribution of each heating zone as disclosed in the embodiments of this application;

[0016] Figure 6 This is a connection diagram of the cooling device and filter disclosed in the embodiments of this application;

[0017] Figure 7 This is an exploded view of the cooling device and filter disclosed in the embodiments of this application;

[0018] Figure 8 This is an exploded view of the air-cooled air inlet component disclosed in the embodiments of this application;

[0019] Figure 9 This is a perspective view of the air-cooled air inlet component disclosed in the embodiments of this application;

[0020] Figure 10 This is a schematic diagram of the internal airflow of the air-cooled air inlet component disclosed in the embodiments of this application.

[0021] Explanation of reference numerals in the attached figures:

[0022] 100 - Base; 110 - Heating layer; 111 - Heating zone; 1101 - Core area; 1102 - First intermediate zone;

[0023] 1103 - Second intermediate region; 1104 - Edge region; 1111 - Positive electrode feed point; 1112 - Negative electrode feed point;

[0024] 200 - Filter; 210 - Filter connection part; 211 - Second pin; 212 - Positive connection point;

[0025] 213 - Negative connection point; 220 - Adapter section; 2200 - Adapter component; 2201 - Positive adapter component;

[0026] 2202 - Negative electrode adapter; 221 - First connector; 222 - Second connector; 230 - Air inlet;

[0027] 300 - RF feed module; 400 - Matching unit; 500 - Lower electrode interface plate; 510 - First through hole;

[0028] 520 - Second through hole; 600 - Base interface plate; 610 - Limiting groove; 620 - Fixing component;

[0029] 700 - Support ring; 800 - Cooling device; 810 - Air supply device; 820 - Air-cooled air inlet component;

[0030] 821-Air-cooled base; 822-Air-cooled cover plate; 8221-Connecting protrusion; 823-Air inlet cavity;

[0031] 824 - Air outlet; 825 - First seal; 826 - Fixing screw; 827 - Air inlet;

[0032] 828 - Air-cooled connection part; 829 - Connection cavity; 830 - Connection pipeline; 840 - First connector;

[0033] 850 - Second connector; 860 - Air-cooled connector; 861 - Connector connection part; 862 - Air inlet connector part;

[0034] 863-Connecting groove; 900-Cavity body; 910-Base ring; 920-Accommodation cavity; 1000-Upper electrode assembly. Detailed Implementation

[0035] The technical solutions of the embodiments of this application will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application are within the scope of protection of this application.

[0036] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.

[0037] The lower electrode assembly and semiconductor process chamber provided in this application will be described in detail below with reference to the accompanying drawings, through specific embodiments and application scenarios.

[0038] In related technologies, the filter is located outside the chamber body 900 of the semiconductor process chamber. The filter is electrically connected to multiple heating zones 111 of the base 100 via multiple cables. In order to avoid other components of the lower electrode assembly, multiple cables converge and extend vertically downwards to be electrically connected to the filter outside the chamber body 900. This can easily lead to multiple cables being parallel to each other in the vertical direction, which can easily cause radio frequency coupling. Furthermore, since the filter is located outside the chamber body 900, the distance between the filter and the base 100 is relatively large, resulting in longer cables and making it easier for radio frequency coupling to occur between multiple cables.

[0039] refer to Figures 1-10 The present application provides a lower electrode assembly, which is disposed entirely within the chamber body 900 of a semiconductor process chamber. Specifically, the lower electrode assembly may include a base 100, at least two adapters 220 and at least two filters 200, that is, the base 100, adapters 220 and filters 200 are all disposed within the chamber body 900.

[0040] The base 100 may be provided with a heating layer 110, and the heating layer 110 may include at least two heating zones 111 for partitioned heating of the wafer. Here, by individually controlling the temperature of each heating zone 111 and the heating capacity of each heating zone 111, such as by individually adjusting the internal hardware and software parameters of each heating zone 111, the process rate and uniformity of different areas of the wafer in the process can be adjusted to improve the uniformity of heating and enhance process capability.

[0041] At least two adapter sections 220 can correspond one-to-one with at least two heating zones 111, and at least two filters 200 can correspond one-to-one with at least two heating zones 111. Each filter 200 and its corresponding heating zone 111 can be electrically connected through the corresponding adapter section 220. In this way, each heating zone 111 can be equipped with an independent filter 200 to filter each heating zone 111 individually, preventing radio frequency from entering the heating power supply of the base 100 and affecting the use of the heating power supply, improving safety, and making it easier to arrange the adapter sections 220, thereby helping to reduce the degree of radio frequency coupling between the adapter sections 220.

[0042] This configuration, by placing the filter 200 within the chamber body 900 of the semiconductor process chamber, effectively shortens the distance between the filter 200 and the base 100, thereby effectively shortening the length of the transition portion 220 between the filter 200 and the heating zone 111 of the base 100. This effectively reduces the degree of RF coupling between the transition portions 220. Furthermore, since at least two filters 200 correspond one-to-one with at least two heating zones 111, and each filter 200 is electrically connected to its corresponding heating zone 111 through its corresponding transition portion 220, each heating zone 111 can be equipped with its own filter 200. This effectively avoids the concentrated distribution of the transition portions 220, thus preventing one-sided concentrated feeding and further reducing the degree of RF coupling between the transition portions 220. This improves the consistency of the process rate, thereby avoiding process misalignment and poor process uniformity.

[0043] In specific implementations, the lower electrode assembly may further include a base interface disk 600, a support ring 700, a lower electrode interface disk 500, and an RF feed module 300. The number of filters 200 can be four. The base 100 can be an electrostatic chuck, and the base interface disk 600 can be a ceramic interface disk. The base 100, the RF feed module 300, and the matching unit 400 can be connected to form an RF feed loop (i.e., the RF feed path is base 100, RF feed module 300 - matching unit 400). The lower electrode interface disk 500 can be connected to the chamber body 900 of the semiconductor process chamber and is used to receive the RF feed module 300. Here, the RF feed module 300 can occupy the center position of the entire lower electrode assembly. The lower electrode interface disk 500 can receive the base 100 through the support ring 700 and the base interface disk 600. The base interface disk 600 can be located below the base 100 to receive the base 100. The support ring 700 can be disposed between the base interface disk 600 and the lower electrode interface disk 500 and is used to increase the distance between the base interface disk 600 and the lower electrode interface disk 500 to avoid insufficient ability to bombard gas into plasma due to direct RF grounding.

[0044] Here, the base 100 is a crucial component for RF feed. The base 100 can be a multi-layered adhesive structure to achieve functions such as adsorption, temperature control, and heating. The heating layer 110 on the base 100 can be controlled by DC or AC power to achieve the heating function of the base 100. Furthermore, the heating layer 110 can be provided with four heating zones 111, the temperature of each heating zone 111 can be individually controlled. Since RF can directly enter the heating power supply through the heating circuit of each heating zone 111 via the base 100, a filter 200 needs to be placed before the heating power supply to filter out RF. The RF feed circuit of each heating zone 111 is formed by the heating power supply connecting to each filter 200 via an adapter 220. Specifically, the filter 200 is connected to the heating layer 110 of the base 100 via the base interface panel 600 and the adapter 220.

[0045] In this embodiment, the heating zone 111 is an annular region, and each heating zone 111 is distributed sequentially along the radial direction of the base 100. Each heating zone 111 is provided with a heating element, and each adapter 220 is electrically connected to the heating element in each heating zone 111. Here, the heating element can be a heating wire or other heating structure. Along the radial direction of the base 100, the four heating zones 111 are a core zone 1101, a first intermediate zone 1102, a second intermediate zone 1103, and an edge zone 1104.

[0046] In optional embodiments of this application, such as Figure 2As shown, the lower electrode assembly includes the lower electrode interface disk 500 described above. The lower electrode interface disk 500 is disposed below the base 100. The filter 200 can be connected to the lower electrode interface disk 500, thus fixing the filter 200. Furthermore, the filter connection part 210 of the filter 200 can pass through the lower electrode interface disk 500 and be electrically connected to the adapter part 220. This further shortens the distance between the filter 200 and the base 100, allowing the filter connection part 210 to be directly electrically connected to the adapter part 220, thereby effectively reducing the degree of radio frequency coupling.

[0047] Optionally, the lower electrode interface disk 500 may be provided with at least two first through holes 510, and one end of the filter connection part 210 of each filter 200 may pass through each first through hole 510 and be connected to each adapter part 220, so as to facilitate the connection of the filter 200 to the adapter part 220.

[0048] In other embodiments, the filter 200 may not be connected to the lower electrode interface disk 500, and the filter connection part 210 of the filter 200 may not pass through the lower electrode interface disk 500. Specifically, the filter 200 as a whole may be disposed below the lower electrode interface disk 500, and the filter connection part 210 of the filter 200 and the adapter part 220 may be connected by a cable.

[0049] In addition, in related technologies, in order to avoid other components of the lower electrode assembly, the electrical connection filter and multiple cables of multiple heating zones 111 may be parallel to each other in the horizontal direction during the process of mutual aggregation, which will make the radio frequency mutual coupling between multiple cables more serious.

[0050] In optional embodiments of this application, such as Figure 4 As shown, the heating zone 111 can be provided with a positive feed point 1111 and a negative feed point 1112. The adapter 220 can include two strip-shaped adapters 2200, which can be a positive adapter 2201 and a negative adapter 2202, respectively. The two ends of the positive adapter 2201 can be electrically connected to the positive feed point 1111 and the positive output terminal of the filter 200, respectively. The two ends of the negative adapter 2202 can be electrically connected to the negative feed point 1112 and the negative output terminal of the filter 200, respectively. In this way, each filter 200 can form a loop with each heating zone 111, so as to filter each heating zone 111.

[0051] Here, the positive output terminal of the filter 200 can be provided with a positive connection point 212, and the positive adapter 2201 is electrically connected to the positive connection point 212. The negative output terminal of the filter 200 can be provided with a negative connection point 213, and the negative adapter 2202 is electrically connected to the negative connection point 213.

[0052] Furthermore, to address the aforementioned issues, the extensions of the orthographic projections of two adapters 2200 belonging to the same adapter section 220 onto the heating layer 110 along their respective length directions can intersect. This eliminates the situation where the orthographic projections of two adapters 2200 within the same adapter section 220 onto the heating layer 110 are parallel along their own length directions, thereby reducing the degree of RF coupling between the adapters 2200. This further improves the consistency of the process rate, preventing process misalignment and poor process uniformity.

[0053] In other embodiments, the orthographic projections of two adapters 2200 belonging to the same adapter 220 onto the heating layer 110 along their respective length directions can also be parallel.

[0054] Optionally, the orthographic projections of all adapter members 2200 on the heating layer 110 along their respective length directions intersect, meaning that the orthographic projections of all adapter members 2200 on the heating layer 110 along their respective length directions intersect. This further eliminates the parallelism of the adapter members 2200, thereby further reducing the degree of RF coupling between the adapter members 2200. Of course, the orthographic projections of adapter members 2200 belonging to different adapter sections 220 on the heating layer 110 along their respective length directions can also be parallel.

[0055] In optional embodiments, such as Figure 4 As shown, the positive electrode adapter 2201 and the negative electrode adapter 2202, belonging to the same adapter section 220, have the same length on the heating layer 110. This avoids uneven feed efficiency caused by hardware differences, thereby further improving the heating capacity of the base 100 and ensuring that the heating of each heating zone 111 does not affect each other, thus improving the uniformity of the process. Optionally, the positive electrode adapter 2201 and the negative electrode adapter 2202, belonging to the same adapter section 220, have the same length in space. This forms a balanced current path when transmitting current, which helps to reduce the generation of electromagnetic fields. Since a balanced current path can better control the distribution of electromagnetic fields, unnecessary radiation can be reduced.

[0056] Furthermore, the orthogonal projections of the positive electrode adapter 2201 and the negative electrode adapter 2202, which belong to the same adapter section 220, onto the heating layer 110 can be symmetrical about the perpendicular bisector of the line connecting the positive electrode feed point 1111 and the negative electrode feed point 1112. This can further reduce the degree of radio frequency coupling and improve the stability and reliability of the circuit formed by the filter 200 and the heating zone 111.

[0057] Of course, the lengths of the orthographic projections of the positive electrode adapter 2201 and the negative electrode adapter 2202 in the same adapter 220 on the heating layer 110 may not be the same, and the orthographic projections of the positive electrode adapter 2201 and the negative electrode adapter 2202 in the same adapter 220 on the heating layer 110 may not be symmetrical about the perpendicular bisector of the line connecting the positive electrode feed point 1111 and the negative electrode feed point 1112.

[0058] In an optional embodiment of this application, the adapter 2200 can be a rigid structure; specifically, the adapter 2200 can be made of a rigid metal rod. This improves the connection stability of the adapter 2200 and ensures the consistency of each adapter 2200. Of course, in other embodiments, the adapter 2200 can also be a flexible structure.

[0059] Optionally, the adapters 2200 can be distributed in the same plane, and the axes of the adapters 2200 can intersect each other, which can further reduce the degree of radio frequency coupling. Specifically, the adapters 2200 can all be disposed on the side of the base interface disk 600 near the filter 200 as described below.

[0060] In an optional embodiment, the two ends of the adapter 2200 may be respectively provided with a first connector 221 and a second connector 222. The first connector 221 may be located above the adapter 2200 and electrically connected to the heating zone 111, and the second connector 222 may be located below the adapter 2200 and electrically connected to the filter 200. This facilitates the electrical connection between the adapter 2200 and the heating zone 111 and the filter 200.

[0061] In this design, the first connector 221 can be a first pin, and the second connector 222 can be either a second pin 211 or a socket, which can be plugged into the second pin 211. This arrangement facilitates quick connection between the filter 200 and the base 100, thereby saving installation time and improving process efficiency. Here, the filter 200 includes a socket, and the second connector 222 includes the second pin 211. It should be noted that the socket can be located within the space enclosed by the support ring 700 mentioned above.

[0062] Of course, the first connector 221 may not be the first pin, and the second connector 222 and the filter 200 may not include the second pin 211 and the socket. Specifically, the first connector 221 and the second connector 222 may both be cables.

[0063] Optionally, the lower electrode assembly may further include the base interface disk 600 described above, which can be used to support the base 100. To facilitate the installation of the adapter 2200, the base interface disk 600 may be provided with multiple limiting grooves 610, and each adapter 2200 may be located within a respective limiting groove 610.

[0064] Of course, the limiting groove 610 may not be provided on the base interface plate 600. The adapter 2200 can be fixed on the base interface plate 600 by a clip, or the adapter 2200 can be glued to the base interface plate 600.

[0065] Furthermore, one end of each first connector 221 can extend through the base interface plate 600 into the base 100 to facilitate electrical connection with the heating zone 111, and one end of each second connector 222 can extend out of the limiting groove 610 to facilitate electrical connection with the filter 200.

[0066] Here, the first connector 221 of the positive adapter 2201 can be electrically connected to the positive feed point 1111, and the second connector 222 of the negative adapter 2202 can be electrically connected to the negative feed point 1112; the second connector 222 of the positive adapter 2201 can be electrically connected to the positive output terminal of the filter 200, and the second connector 222 of the negative adapter 2202 can be electrically connected to the negative output terminal of the filter 200.

[0067] In addition, the adapter 2200 and the base interface disk 600 can be connected via the fastener 620. This improves the stability of the connection between the adapter 2200 and the base interface disk 600, thereby further enhancing the consistency of each adapter 2200. Of course, the adapter 2200 can also simply be embedded in the limiting groove 610 without being connected to the base interface disk 600 via the fastener 620.

[0068] Here, the fixing member 620 can be a nut, and a stud can be provided on the base interface plate 600. The stud can be located in the limiting groove 610 and connected to the groove wall of the limiting groove 610. A space can be provided between the stud and the bottom of the limiting groove 610 for the adapter 2200 to extend into. The nut can be threadedly connected to the stud. Tightening the nut on the stud can press the adapter 2200 against the groove, thereby fixing the adapter 2200 in the limiting groove 610. Optionally, the adapter 2200 and the base interface plate 600 can be connected by two fixing members 620 to improve the stability of the connection between the adapter 2200 and the base interface plate 600. Specifically, two studs can be provided on the base interface plate 600. The two studs can be respectively located near the two ends of the limiting groove 610, and two nuts can be threadedly connected to the two studs respectively.

[0069] In an optional embodiment of this application, the lower electrode assembly may further include a cooling device 800, which may be connected to each filter 200 and used to cool each filter 200. This prevents the filter 200 from overheating during operation, which could damage or cause failure of the filter elements in the filter 200.

[0070] In other embodiments, the lower electrode assembly may also exclude the cooling device 800.

[0071] In an optional embodiment, each filter 200 may include a filter housing and a filter element. The filter element may be disposed inside the filter housing and may be electrically connected to the adapter 2200 and the heating power supply so that the heating zone 111 and the heating power supply form a circuit.

[0072] The filter housing may be provided with an air inlet 230 to allow air to enter the filter housing and cool the filter elements. Optionally, to prevent external dust and other contaminants from entering the filter 200, a filter screen may be provided at the air inlet 230 to filter the air.

[0073] like Figure 7 As shown, the cooling device 800 may include an air supply device 810 and an air-cooled inlet component 820. The air-cooled inlet component 820 may be provided with an air inlet chamber 823 and at least two air outlets 824. Each air outlet 824 may be connected to the air inlet chamber 823, which may be connected to the air supply device 810. Furthermore, each air outlet 824 may be connected to a corresponding air inlet 230. Thus, the compressed air provided by the air supply device 810 can pass through the air inlet chamber 823 and each air outlet 824, and then enter the interior of each filter 200 through each air inlet 230 to cool and reduce the temperature of each filter 200. Here, the air supply device 810 is connected to the air inlet 230 of each filter 200 through the air-cooled inlet component 820, which simplifies the structure of the cooling device 800 and reduces the space occupied by the cooling device 800, thereby reducing the volume of the lower electrode assembly.

[0074] In other embodiments, the cooling device 800 may also include only the air supply device 810, the outlet of which can be connected to the air inlet 230 of each filter 200 via multiple connecting pipes 830.

[0075] Optionally, the air supply device 810 can be a blower, or of course, a fan, or other device capable of supplying air.

[0076] To prevent air leakage, a first sealing element 825 can be provided at the connection between each air outlet 824 and each air inlet 230. Specifically, the first sealing element 825 can be connected to the air-cooled air inlet 820, with part of the first sealing element 825 connected inside the air outlet 824 and the other part of the first sealing element 825 extending into the air inlet 230.

[0077] In this embodiment, the air-cooled air inlet 820 can be connected to the filter housing of each filter 200. Specifically, the air-cooled air inlet 820 can be provided with at least two connecting protrusions 8221, each connecting protrusion 8221 can correspond to each filter 200 respectively, and each connecting protrusion 8221 can be connected to the filter housing of each filter 200 respectively by connecting screws.

[0078] In an optional embodiment, the lower electrode assembly further includes the aforementioned RF feed module 300, which is electrically connected to the lower electrode on the base 100 to provide the RF power required for the process. At least two filters 200 can be distributed circumferentially around the RF feed module 300. This avoids all filters 200 being concentrated on one side of the RF feed module 300, reducing RF coupling between the filter connections 210 of each filter 200 or between the second connectors 222, and also reducing the parallel distribution of the adapters 2200, further eliminating or reducing RF coupling. Alternatively, each filter 200 can be located on one side of the RF feed module 300.

[0079] Here, a second through hole 520 can also be provided on the lower electrode interface disk 500. The second through hole 520 can be used for part of the RF feed module 300 to pass through, so that the RF feed module 300 can be connected to the base 100.

[0080] In practice, in order to avoid gas pipelines (such as helium supply pipelines) and power components (such as DC-DC devices) that are connected to the process space of the semiconductor process chamber, the filters 200 are not completely uniformly distributed in the circumference of the RF feed module 300.

[0081] In addition, the air-cooled air inlet 820 can be a ring structure, and the air-cooled air inlet 820 can be arranged around the RF feed module 300. This facilitates the connection of the air-cooled air inlet 820 with each filter 200, ensuring that the air-cooled air inlet 820 can simultaneously provide compressed air to each filter 200.

[0082] In other embodiments, the air-cooled inlet component 820 may not be configured as a ring structure; the air-cooled inlet component 820 may be configured as a strip structure. Alternatively, the air-cooled inlet component 820 may be provided with at least two air outlet connection parts, each air outlet connection part being connected to each filter 200 respectively, and each air outlet 824 may be respectively provided on each air outlet connection part.

[0083] In optional embodiments, such as Figure 8 As shown, the air-cooled inlet component 820 may include an air-cooled base 821 and an air-cooled cover plate 822. The air-cooled base 821 may have an air inlet slot, and each air outlet 824 may communicate with the air inlet slot. Each air outlet 824 may be located on the side wall of the air-cooled base 821, specifically on the side wall of the air-cooled base 821 away from the RF feed module 300, so that each air outlet 824 can communicate with each air inlet 230. The air-cooled cover plate 822 may be connected to the air-cooled base 821 and close the opening of the air inlet slot to form an air inlet cavity 823. This design of the air-cooled inlet component 820 as a split structure facilitates manufacturing. Here, the air-cooled cover plate 822 and the air-cooled base 821 can be connected by fixing screws 826. Of course, the air-cooled inlet component 820 can also be a one-piece structure.

[0084] Optionally, in order to ensure the airtightness of the air-cooled air inlet component 820, a second sealing element may be provided at the connection between the air-cooled cover plate 822 and the air-cooled substrate 821.

[0085] In some embodiments, the air-cooled air inlet component 820 may be provided with an air inlet hole 827, which communicates with the air inlet cavity 823. A connecting pipe 830 may be provided between the air supply device 810 and the air-cooled air inlet component 820. A first connector 840 may be provided on the air-cooled air inlet component 820, and a second connector 850 may be provided at the outlet of the air supply device 810. The first connector 840 and the second connector 850 may be connected to the two ends of the connecting pipe 830, respectively, to achieve the connection between the air supply device 810 and the air-cooled air inlet component 820. Here, the air inlet hole 827 can communicate with the air supply device 810 through the connecting pipe 830, allowing compressed air to enter the air inlet cavity 823 through the air inlet hole 827.

[0086] Optionally, the air-cooled air inlet component 820 may have a protruding air-cooled connecting part 828, the air-cooled connecting part 828 may have a connecting cavity 829 communicating with the air inlet cavity 823, and the air inlet hole 827 may be provided on the air-cooled connecting part 828, the air inlet hole 827 may communicate with the connecting cavity 829 and the inner cavity of the first connector 840 respectively.

[0087] Optionally, the first connector 840 can be connected to the air-cooled connector 828 via an air-cooled connector 860. Specifically, the air-cooled connector 860 may include a connector connector 861 and an air inlet connector 862 connected to the connector connector 861. The connector connector 861 can be connected to the first connector 840, and the connector connector 861 may be provided with ventilation holes. The ventilation holes may communicate with the inner cavity of the first connector 840 and the air inlet 827, respectively. The air inlet connector 862 may be provided with a connecting groove 863. The air-cooled connector 828 may be embedded in the connecting groove 863 and connected to the groove wall of the connecting groove 863 by screws. In this way, the connection strength between the air-cooled connector 860 and the air-cooled connector 828 can be improved.

[0088] Here, the end of the air-cooled connector 828 facing away from the air-cooled inlet 820 can fit against the connector 861, thus improving the sealing performance between the air-cooled connector 860 and the air-cooled connector 828. To further improve the sealing performance between the air-cooled connector 828 and the air-cooled connector 860, a third sealing element can be provided between them.

[0089] Based on the lower electrode assembly provided in the embodiments of this application, this application also provides a semiconductor process chamber. The semiconductor process chamber may include a chamber body 900, an upper electrode assembly 1000, and the lower electrode assembly described in any of the above embodiments. The lower electrode assembly is disposed within the chamber body 900. The upper electrode assembly 1000, the chamber body 900, and the lower electrode assembly are connected to form a process space. The process space allows wafers to enter and perform process processing on the wafers, such as etching.

[0090] The beneficial effects achieved by the semiconductor process chamber provided in this application embodiment are consistent with the beneficial effects achieved by the lower electrode assembly provided in this application embodiment, so they will not be repeated here.

[0091] In an optional embodiment, a base ring 910 may be provided at the bottom of the chamber body 900. The base ring 910 may be located within the chamber body 900, and the lower electrode assembly may further include an RF feed module 300. The base ring 910 may be used to support the base 100. Specifically, the base ring 910 may support the lower electrode interface disk 500. The base ring 910 may form a receiving cavity 920, and the receiving cavity 920 may be used to accommodate at least a portion of the RF feed module 300 and at least a portion of each filter 200. In this way, at least a portion of the filter 200 can be disposed within the chamber body 900. On the one hand, this can effectively shorten the distance between the filter 200 and the base 100, thereby effectively reducing the degree of RF coupling. On the other hand, it is beneficial to reduce the volume of the semiconductor process chamber.

[0092] Optionally, the semiconductor process chamber may also include a matching unit 400. The matching unit 400 may be disposed outside the chamber body 900 of the semiconductor process chamber, and the matching unit 400 is electrically connected to the RF feed module 300, so that the matching unit 400, the RF feed module 300 and the base 100 can form an RF feed loop.

[0093] The embodiments of this application have been described above with reference to the accompanying drawings. However, this application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not restrictive. Those skilled in the art can make many other forms under the guidance of this application without departing from the spirit and scope of the claims, and all of these forms are within the protection scope of this application.

Claims

1. A lower electrode assembly, characterized in that, For placement within a chamber body (900) of a semiconductor process chamber, the lower electrode assembly includes: The base (100) is provided with a heating layer (110), the heating layer (110) including at least two heating zones (111). At least two transition sections (220) correspond one-to-one with the at least two heating zones (111); At least two filters (200) correspond one-to-one with the at least two heating zones (111), and each filter (200) is electrically connected to the corresponding heating zone (111) through the corresponding adapter (220); The heating zone (111) is provided with a positive electrode feed point (1111) and a negative electrode feed point (1112); the adapter (220) includes two strip-shaped adapters (2200), which are a positive electrode adapter (2201) and a negative electrode adapter (2202), respectively. The two ends of the positive electrode adapter (2201) are electrically connected to the positive electrode feed point (1111) and the positive electrode output terminal of the filter (200), respectively. The two ends of the negative electrode adapter (2202) are electrically connected to the negative electrode feed point (1112) and the negative electrode output terminal of the filter (200), respectively. The two adapters (2200) belonging to the same adapter (220) intersect along the extension lines of their respective length directions when projected onto the heating layer (110). The lower electrode assembly also includes an RF feed module (300), and each of the filters (200) is distributed around the RF feed module (300) circumferentially.

2. The lower electrode assembly according to claim 1, characterized in that, The lower electrode assembly further includes a lower electrode interface disk (500), which is disposed below the base (100). The filter (200) is connected to the lower electrode interface disk (500), and the filter connection part (210) of the filter (200) passes through the lower electrode interface disk (500) and is electrically connected to the adapter part (220).

3. The lower electrode assembly according to claim 2, characterized in that, The positive electrode adapter (2201) and the negative electrode adapter (2202) belonging to the same adapter section (220) have the same length of orthographic projection on the heating layer (110), and the orthographic projection of the positive electrode adapter (2201) and the negative electrode adapter (2202) belonging to the same adapter section (220) on the heating layer (110) is symmetrical about the perpendicular bisector of the line connecting the positive electrode feed point (1111) and the negative electrode feed point (1112).

4. The lower electrode assembly according to claim 2, characterized in that, The adapter (2200) is a rigid structure.

5. The lower electrode assembly according to claim 2, characterized in that, The adapter (2200) has a first connector (221) and a second connector (222) at its two ends. The first connector (221) is located above the adapter (2200) and is electrically connected to the heating zone (111). The second connector (222) is located below the adapter (2200) and is electrically connected to the filter (200). The first connector (221) is a first pin. The second connector (222) and the filter (200) each include a second pin (211) and a socket that is plugged into the second pin (211).

6. The lower electrode assembly according to claim 5, characterized in that, The lower electrode assembly also includes a base interface disk (600) for supporting the base (100). The base interface disk (600) is provided with a plurality of limiting grooves (610). Each adapter (2200) is located in each of the limiting grooves (610). One end of each first connector (221) passes through the base interface disk (600) and extends into the base (100). One end of each second connector (222) extends out of the limiting groove (610). The adapter (2200) is connected to the base interface disk (600) by a fixing member (620).

7. The lower electrode assembly according to claim 1, characterized in that, The lower electrode assembly also includes a cooling device (800), which is connected to each of the filters (200) and is used to cool each of the filters (200).

8. The lower electrode assembly according to claim 7, characterized in that, Each of the filters (200) includes a filter housing and a filter element disposed in the filter housing. The filter element is used to electrically connect with the adapter (220) and the heating power supply. An air inlet (230) is provided on the filter housing. The cooling device (800) includes an air supply device (810) and an air-cooled air inlet (820). The air-cooled air inlet (820) is provided with an air inlet cavity (823) and at least two air outlets (824) communicating with the air inlet cavity (823). The air inlet cavity (823) is connected to the air supply device (810), and each air outlet (824) is respectively connected to each air inlet (230).

9. The lower electrode assembly according to claim 8, characterized in that, The air-cooled air inlet (820) has a ring structure and is arranged around the radio frequency feed module (300).

10. The lower electrode assembly according to claim 8, characterized in that, The air-cooled air inlet component (820) includes an air-cooled base (821) and an air-cooled cover plate (822). An air inlet groove is provided on the air-cooled base (821). Each of the air outlets (824) is provided on the side wall of the air-cooled base (821) and communicates with the air inlet groove. The air-cooled cover plate (822) is connected to the air-cooled base (821) and closes the opening of the air inlet groove to form the air inlet cavity (823).

11. A semiconductor process chamber, characterized in that, It includes a chamber body (900), an upper electrode assembly (1000), and a lower electrode assembly as described in any one of claims 1-10, wherein the lower electrode assembly is disposed within the chamber body (900), and the upper electrode assembly (1000), the chamber body (900), and the lower electrode assembly are connected to form a process space.

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