Preparation method of novel power device and power device

By adopting the preparation method of a new power device in a hot-swap circuit, the opening sequence of multiple different threshold voltage units is used to solve the problem of the device burning due to thermal instability, and a safer working state is achieved.

CN119403159AActive Publication Date: 2025-02-07SHANGHAI GONGCHENG SEMICON TECH CO LTD
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Patent Information

Application Number
CN202411975010.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-31
Publication Date
2025-02-07
Estimated Expiration
2044-12-31

AI Technical Summary

Technical Problem

The problem of power devices burning out due to thermal instability in hot-swap circuits.

Method used

Using a new method of preparing power devices, a plurality of trenches are formed by etching on the first surface of the substrate, each trenche includes a corresponding gate region, and the gate polysilicon is located in the gate region to form a plurality of Different threshold voltage units are turned on in the order of the threshold voltage from low to high when turned on.

Benefits of technology

By forming multiple different threshold voltage units in one device, expanding the safe working area of ​​the device, the low threshold voltage unit is turned on first, and the high threshold voltage unit is not turned on, and almost no current and heat are generated, participating in heat dissipation, greatly reducing the device's reason. Possibility of heat instability burnout.

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Abstract

The invention discloses a preparation method of a novel power device and the power device, relates to the technical field of power semiconductor devices, and can solve the problem that the power device in a hot plug circuit is burnt out due to thermal instability. The method is used for preparing the power device, the power device comprises a plurality of different threshold voltage units, the power device is started according to the sequence of threshold voltages from low to high, and the method comprises the steps that a plurality of grooves are formed in the first surface of a substrate through etching, each groove comprises a corresponding gate region, gate polycrystalline silicon is located in the gate region, and the gate polycrystalline silicon is located in the gate region; a first channel is formed between the first side surface of the grid polycrystalline silicon and the source electrode, a second channel is formed between the second side surface of the grid polycrystalline silicon and the source electrode, and the source electrode is formed in the substrate below the grid electrode oxide layer between two adjacent grid electrode regions; forming a plurality of grid electrodes according to the length of the first channel and the length of the second channel, and forming a plurality of different threshold voltages by the plurality of grid electrodes and the source electrode; and forming a drain electrode on the second surface of the substrate.
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Citation Information

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