A seed crystal surface treatment tool and method for single crystal blades

Abstract

A seed crystal surface treatment tool and method for single crystal blades, the tool comprising a clamping table, a clamping block, a pressing plate and a pressing screw; the clamping block is used for placing the seed crystal and is located inside the clamping table; the pressing plate is located above the clamping block; and the pressing screw is vertically installed on the clamping table above the pressing plate. The method is: cutting and preparing the seed crystal, cleaning the seed crystal in an alcohol solution through ultrasonic waves; fixing the seed crystal to the tool; using dry powder sandblasting to sandblast and polish the exposed surface of the seed crystal, completing the initial removal of the surface oxidation layer of the seed crystal; using acid pickling to pickle the exposed surface of the seed crystal, completing the secondary removal of the surface oxidation layer of the seed crystal, and then rinsing the surface of the seed crystal with clean water. The present application can meet the needs of batch removal of the oxidation layer of the seed crystal, and the surface treatment process combining sandblasting and pickling can realize the uniformity of the removal of the surface oxidation layer of the seed crystal, greatly improve the preparation efficiency of the seed crystal, and thus better meet the actual production needs.

Description

Technical Field

[0001] The invention belongs to the technical field of aerospace engine parts manufacturing, and in particular relates to a tool and method for treating the surface of a seed crystal for a single crystal blade. Background Art

[0002] Direct casting of seed crystals or electrospark cutting of single crystal test bars or specimens is a common method for preparing seed crystal specimens. However, there will be an oxide layer of a certain thickness on the surface of the seed crystal specimen. This oxide layer not only affects the analysis and testing of the crystal orientation, but also easily leads to the formation of miscellaneous crystal defects during the seed crystal preparation process.

[0003] Therefore, to ensure that crystal orientation analysis and testing is not affected and to avoid stray crystal defects during seed crystal preparation, mechanical polishing is often used to remove the oxide layer on the surface of the seed crystal sample. However, mechanical polishing is inefficient and can easily cause the seed crystal reference surface to deviate, which not only reduces seed crystal preparation efficiency but also makes it difficult to meet actual production needs. Summary of the Invention

[0004] In response to the problems existing in the prior art, the present invention provides a tool and method for surface treatment of seed crystals for single crystal blades, which can meet the needs of batch removal of oxide layers of seed crystals. The surface treatment process combining sand blasting and pickling can achieve uniform removal of oxide layers on the surface of seed crystals, greatly improve the preparation efficiency of seed crystals, and thus better meet actual production needs.

[0005] In order to achieve the above-mentioned purpose, the present invention adopts the following technical solution: a seed crystal surface treatment tool for a single crystal blade, comprising a clamping table, a clamping block, a pressure plate and a clamping screw; the clamping block is used to place the seed crystal, and the clamping block is located inside the clamping table; the pressure plate is located above the clamping block; the clamping screw is vertically installed on the clamping table above the pressure plate.

[0006] The clamping table adopts an inverted T-shaped groove structure, and the clamping block adopts a rectangular parallelepiped structure. Several seed crystal slots are evenly distributed on the upper and lower surfaces of the clamping block, and the seed crystal slots on the upper surface of the clamping block are staggered with the seed crystal slots on the lower surface of the clamping block.

[0007] The pressing plate is located in the inverted T-shaped groove of the clamping platform, and a first rubber pad is fixedly mounted on the lower surface of the pressing plate; a second rubber pad is fixedly mounted on the bottom surface of the inverted T-shaped groove of the clamping platform.

[0008] A rubber protective plate is provided between the clamping platform and the seed crystal, and a seed crystal insertion hole is provided on the rubber protective plate.

[0009] There are two clamping screws, and each of the two clamping arms at the top of the inverted T-shaped groove of the clamping platform is equipped with a clamping screw, and the screw end of the clamping screw is directly opposite to the upper surface of the pressure plate.

[0010] A positioning block is provided on the back of the clamping platform, and the positioning block is fixedly connected to the clamping platform by fastening screws.

[0011] A method for treating the surface of a single crystal blade seed crystal, using the tooling for treating the surface of a single crystal blade seed crystal, comprises the following steps:

[0012] Step 1: Seed crystal preparation and cleaning

[0013] First, the seed crystal is cut and prepared using a wire cutting machine. Then the cut seed crystal is placed in an alcohol solution and then cleaned with ultrasound in the alcohol solution to remove oil stains on the surface of the seed crystal.

[0014] Step 2: Clamping and fixing the seed crystal

[0015] First, put the clamping block into the inverted T-shaped groove of the clamping table, with the lower surface of the clamping block in contact with the second rubber pad, and the rear surface of the clamping block in contact with the positioning block. Then, insert the seed crystals into all the seed crystal slots of the clamping block one by one. Then, place the pressing plate above the clamping block so that the first rubber pad is between the upper seed crystal and the pressing plate. Then, tighten the two clamping screws until the pressing plate presses and fixes the upper seed crystal in the upper seed crystal slot of the clamping block through the first rubber pad. At the same time, the clamping table clamps and fixes the lower seed crystal in the lower seed crystal slot of the clamping block through the second rubber pad. Then, align the seed crystal mounting hole on the rubber protective plate with the clamped seed crystal, and pass the seed crystal through the seed crystal mounting hole on the rubber protective plate until the rubber protective plate and the clamping table are in contact with each other.

[0016] Step 3: Sand blasting of seed crystal

[0017] The surface of the seed crystal located outside the rubber protective plate is sandblasted and polished by dry powder sandblasting until the initial oxide layer on the surface of the seed crystal is removed;

[0018] Step 4: Pickling of seed crystals

[0019] First, the surface of the seed crystal located on the outside of the rubber protective plate is pickled by pickling until the oxide layer on the surface of the seed crystal is removed again, and then the surface of the seed crystal is rinsed with clean water.

[0020] Beneficial effects of the present invention:

[0021] The surface treatment tooling and method of the seed crystal for single crystal blades of the present invention can meet the needs of batch oxide layer removal of seed crystals. The surface treatment process combining sand blasting and pickling can achieve uniform removal of the oxide layer on the surface of the seed crystal, which can greatly improve the preparation efficiency of the seed crystal, thereby better meeting actual production needs. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1Schematic diagram of the structure of a single crystal blade seed crystal surface treatment tool (rubber protection plate not shown) of the present invention (viewing angle 1);

[0023] Figure 2 Schematic diagram of the structure of a tool for treating the surface of a seed crystal for a single crystal blade according to the present invention (viewpoint 2);

[0024] Figure 3 It is a structural schematic diagram of the clamping block of the present invention;

[0025] In the figure, 1 is the clamping table, 2 is the clamping block, 3 is the pressure plate, 4 is the tightening screw, 5 is the seed crystal, 6 is the seed crystal slot, 7 is the first rubber pad, 8 is the second rubber pad, 9 is the rubber protective plate, 10 is the positioning block, and 11 is the tightening screw. DETAILED DESCRIPTION

[0026] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0027] like Figures 1 to 3 As shown, a tool for surface treatment of seed crystals for single crystal blades includes a clamping platform 1, a clamping block 2, a pressure plate 3 and a clamping screw 4; the clamping block 2 is used to place a seed crystal 5, and the clamping block 2 is located inside the clamping platform 1; the pressure plate 3 is located above the clamping block 2; the clamping screw 4 is vertically installed on the clamping platform 1 above the pressure plate 3.

[0028] The clamping table 1 adopts an inverted T-shaped groove structure, and the clamping block 2 adopts a rectangular structure. A number of seed crystal slots 6 are evenly distributed on the upper and lower surfaces of the clamping block 2, and the seed crystal slots 6 on the upper surface of the clamping block 2 are staggered with the seed crystal slots 6 on the lower surface of the clamping block 2.

[0029] The pressing plate 3 is located in the inverted T-shaped groove of the clamping platform 1 , and a first rubber pad 7 is fixedly mounted on the lower surface of the pressing plate 3 ; a second rubber pad 8 is fixedly mounted on the bottom surface of the inverted T-shaped groove of the clamping platform 1 .

[0030] A rubber protection plate 9 is provided between the clamping platform 1 and the seed crystal 5 , and a hole for the seed crystal 5 to pass through is provided in the rubber protection plate 9 .

[0031] There are two clamping screws 4 , and each of the two clamping arms at the top of the inverted T-shaped slot of the clamping platform 1 is equipped with a clamping screw 4 . The screw end of the clamping screw 4 is opposite to the upper surface of the pressure plate 3 .

[0032] A positioning block 10 is provided on the back of the clamping platform 1 , and the positioning block 10 is fixedly connected to the clamping platform 1 via fastening screws 11 .

[0033] A method for treating the surface of a single crystal blade seed crystal, using the tooling for treating the surface of a single crystal blade seed crystal, comprises the following steps:

[0034] Step 1: Preparation and cleaning of seed crystal 5

[0035] First, the seed crystal 5 is cut and prepared using a wire cutting machine, and then the cut seed crystal 5 is placed in an alcohol solution, and then ultrasonic cleaning is used in the alcohol solution to remove oil stains on the surface of the seed crystal 5;

[0036] In this embodiment, the seed crystal 5 is a DD5 single crystal high temperature alloy test rod, the cross-section of the seed crystal 5 is a square, the side length of the square is 2.8 mm, and the length of the seed crystal 5 is 35 mm;

[0037] Step 2: Clamping and fixing the seed crystal 5

[0038] First, send the clamping block 2 into the inverted T-shaped groove of the clamping table 1, the lower surface of the clamping block 2 fits with the second rubber pad 8, and the rear surface of the clamping block 2 fits against the positioning block 10, then insert the seed crystals 5 into all the seed crystal slots 6 of the clamping block 2 one by one, then place the pressing plate 3 above the clamping block 2, so that the first rubber pad 7 is between the upper seed crystal 5 and the pressing plate 3, then tighten the two clamping screws 4 until the pressing plate 3 presses and fixes the upper seed crystal 5 in the upper seed crystal slot 6 of the clamping block 2 through the first rubber pad 7, and at the same time, the clamping table 1 clamps and fixes the lower seed crystal 5 in the lower seed crystal slot 6 of the clamping block 2 through the second rubber pad 8, then align the seed crystal 5 mounting hole on the rubber protective plate 9 with the clamped seed crystal 5, and pass the seed crystal 5 mounting hole on the rubber protective plate 9 until the rubber protective plate 9 and the clamping table 1 fit together;

[0039] In this embodiment, the cross-sectional shape of the seed crystal slot 6 is adapted to the seed crystal 5. The insertion depth of the seed crystal 5 in the seed crystal slot 6 is 5 mm, and the length of the seed crystal 5 outside the seed crystal slot 6 is 30 mm. The thickness of the rubber protective plate 9 is 1 mm.

[0040] Step 3: Sand blasting of seed crystal 5

[0041] The surface of the seed crystal 5 located outside the rubber protective plate 9 is sandblasted and polished by dry powder sandblasting until the initial removal of the oxide layer on the surface of the seed crystal 5 is completed;

[0042] In this embodiment, the dry powder used for sandblasting and polishing is 100# to 180# corundum sand, the sandblasting pressure is 0.2MPa to 0.6MPa, and the distance between the sandblasting nozzle and the surface of the seed crystal 5 is 100mm to 250mm. During the sandblasting process, the clamping table 1 can be continuously rotated to improve the uniformity of the sandblasting on the surface of the seed crystal 5.

[0043] Step 4: Pickling of Seed Crystal 5

[0044] First, the surface of the seed crystal 5 located outside the rubber protective plate 9 is pickled by pickling until the oxide layer on the surface of the seed crystal 5 is removed again, and then the surface of the seed crystal is rinsed with clean water.

[0045] In this embodiment, the pickling liquid is a ferric chloride etching liquid, the concentration of the ferric chloride solution in the etching liquid is 280g / L~350g / L, the concentration of the hydrochloric acid solution in the etching liquid is 160g / L~180g / L, and the pickling soaking time of the seed crystal 5 in the ferric chloride etching liquid is 15min~20min.

[0046] Furthermore, the sand blasting step and the pickling treatment of the seed crystal 5 can be repeated 2-4 times to ensure that the oxide layer on the surface of the seed crystal 5 is fully removed.

[0047] The solutions in the embodiments are not intended to limit the scope of protection of the present invention. All equivalent implementations or modifications that do not depart from the scope of protection of the present invention are included in the scope of protection of the present invention.

Claims

1. A tool for surface treatment of seed crystals for single crystal blades, characterized by: It includes a clamping table, a clamping block, a pressure plate and a clamping screw; the clamping block is used to place the seed crystal, and the clamping block is located inside the clamping table; the pressure plate is located above the clamping block; the clamping screw is vertically installed on the clamping table above the pressure plate; the clamping table adopts an inverted T-shaped groove structure, and the clamping block adopts a rectangular structure, with a number of seed crystal slots evenly distributed on the upper and lower surfaces of the clamping block, and the seed crystal slots on the upper surface of the clamping block are staggered with the seed crystal slots on the lower surface of the clamping block; the pressure plate is located in the inverted T-shaped groove of the clamping table, and a first rubber pad is fixedly mounted on the lower surface of the pressure plate; a second rubber pad is fixedly mounted on the bottom surface of the inverted T-shaped groove of the clamping table.

2. The surface treatment tool for a single crystal blade seed crystal according to claim 1, characterized in that: A rubber protective plate is provided between the clamping platform and the seed crystal, and a seed crystal insertion hole is provided on the rubber protective plate.

3. The surface treatment tool for a single crystal blade seed crystal according to claim 2, characterized in that: There are two clamping screws, and each of the two clamping arms at the top of the inverted T-shaped groove of the clamping platform is equipped with a clamping screw, and the screw end of the clamping screw is directly opposite to the upper surface of the pressure plate.

4. The surface treatment tool for a single crystal blade seed crystal according to claim 3, characterized in that: A positioning block is provided on the back of the clamping platform, and the positioning block is fixedly connected to the clamping platform by fastening screws.

5. A method for surface treatment of a seed crystal for a single crystal blade, using the tooling for surface treatment of a seed crystal for a single crystal blade according to claim 4, characterized in that: The steps include: Step 1: Seed crystal preparation and cleaning First, the seed crystal is cut and prepared using a wire cutting machine. Then the cut seed crystal is placed in an alcohol solution and then cleaned with ultrasound in the alcohol solution to remove oil stains on the surface of the seed crystal. Step 2: Clamping and fixing the seed crystal First, put the clamping block into the inverted T-shaped groove of the clamping table, with the lower surface of the clamping block in contact with the second rubber pad, and the rear surface of the clamping block in contact with the positioning block. Then, insert the seed crystals into all the seed crystal slots of the clamping block one by one. Then, place the pressing plate above the clamping block so that the first rubber pad is between the upper seed crystal and the pressing plate. Then, tighten the two clamping screws until the pressing plate presses and fixes the upper seed crystal in the upper seed crystal slot of the clamping block through the first rubber pad. At the same time, the clamping table clamps and fixes the lower seed crystal in the lower seed crystal slot of the clamping block through the second rubber pad. Then, align the seed crystal mounting hole on the rubber protective plate with the clamped seed crystal, and pass the seed crystal through the seed crystal mounting hole on the rubber protective plate until the rubber protective plate and the clamping table are in contact with each other. Step 3: Sand blasting of seed crystal The surface of the seed crystal located outside the rubber protective plate is sandblasted and polished by dry powder sandblasting until the initial oxide layer on the surface of the seed crystal is removed; Step 4: Pickling of seed crystals First, the surface of the seed crystal located on the outside of the rubber protective plate is pickled by pickling until the oxide layer on the surface of the seed crystal is removed again, and then the surface of the seed crystal is rinsed with clean water.

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