Plasma physical vapor deposition auxiliary device on surface of dielectric insulation component

Abstract

The invention provides a plasma physical vapor deposition auxiliary device for the surface of a dielectric insulation component. The plasma physical vapor deposition auxiliary device comprises an equipotential metal conductive mesh cage, a gear system and an electric brush mechanism. The equipotential metal conductive mesh cage is arranged between the dielectric insulation component and the grounded furnace wall of the vacuum chamber; a stable and controllable plasma sheath structure is formed at the front end of the dielectric insulation member through the equipotential metal conductive mesh cage; the gear system is in transmission connection with the brush mechanism; the gear system drives the brush mechanism to remove positive charge buildup on the dielectric insulation member surface and the coating growth surface. A plasma sheath structure formed on the surface of the equipotential metal mesh cage is effectively controlled by using the equipotential metal mesh cage, electric field acceleration of incident plasma is realized, controllable incident energy is given, and energized particles can penetrate through the mesh cage to be incident to the surface of the dielectric insulation component, so that the dielectric insulation component is formed. An electric brush mechanism is used for removing charge accumulation on the surface of the dielectric component in the deposition process, and the adverse effect of charge accumulation on the coating quality is eliminated.

Description

Technical Field

[0001] The invention relates to the technical field of plasma physical vapor deposition coating, in particular to a plasma physical vapor deposition auxiliary device on the surface of a dielectric insulating component. Background Art

[0002] The demand for high-power electronic devices in the electronics field is increasing, so the application of metal packaging for ceramic PCB boards is growing. The surfaces of resistors, capacitors, inductors and various functional dielectric material devices require high-quality metallized electrodes. In the field of advanced manufacturing, non-conductive ceramic tools (such as alumina ceramic tools, silicon nitride ceramic tools, single crystal boron nitride (CBN) tools, etc.) have high bonding strength and high-quality coatings on the surface, which has become an important condition for their ability to efficiently process high-hardness materials. The use of physical vapor deposition or plasma-assisted deposition technology is an important means to achieve insulating materials such as ceramic devices, ceramic tools, and polymer workpieces. However, the bonding force between the coating and the substrate obtained by physical vapor deposition technology on the surface of non-conductive workpieces is weak, resulting in early peeling of the coating, which greatly affects the function and service life of the workpiece.

[0003] When vacuum plasma vapor deposition is used to deposit coatings on workpiece surfaces, various bias voltages are usually used to increase the energy of the bombarding particles. The plasma near the surface of the conductive workpiece forms a stable sheath structure, and the voltage drop between the positive and negative electrodes is mainly in the sheath, with a magnitude of V sheath , whose value is close to the applied bias voltage; after the cations enter the sheath, they gain electric field energy and accelerate, bombarding the growth surface of the coating, improving the coating quality and coating adhesion. Due to the dielectric properties of insulating dielectric materials, it is difficult to form a stable plasma sheath structure on the surface: when the DC bias is V sheath 0V; when AC is applied, the surface of the dielectric component accumulates charges, causing the sheath to disappear quickly, V sheath Tends to 0 V, at which time the workpiece surface is in an unstable suspended potential. Therefore, increasing the particle bombardment energy of the coating growth surface is the key to achieving high-quality and high-bonding coatings on the dielectric insulation build surface.

[0004] In order to prepare a coating with high bonding strength on the surface of insulating dielectric components, the following typical methods are currently mainly used: 1) Use auxiliary means to improve the surface conductivity of insulating dielectric components, such as vapor deposition to make the ceramic surface metal film, and use laser irradiation to diffuse it into the sub-surface of the ceramic (CN102339758A); high-energy injection of metal ions on the ceramic surface to improve the conductivity of the surface, and then physical vapor deposition of the required coating (CN 117776785 A). 2) Improve the ionization rate and plasma density in the vapor deposition environment to improve the film quality and coating bonding strength, such as using high-power pulsed magnetron sputtering and other technologies to achieve metallization on the surface of ceramic parts (CN 118422140 A). Realizing the conductive modification of the surface of insulating dielectric components is a very complex process. One of the key technologies is the diffusion and penetration of metal on the surface of the component, which requires a combination of multiple technologies; although this method can obtain high-quality and high-bonding coatings on dielectric insulation thin films, it is technically complex, has a long cycle, and is costly. If the surface of the component is not conductive, simply increasing the ionization rate of the plasma environment may lead to the following adverse consequences: because there is no sheath, the energy of cation bombardment on the surface is small, and the incident cations are repelled by the surface charge accumulation; high-density cations may quickly accumulate on the surface of the insulating medium, causing sparks and affecting the coating quality. Although patent CN118422140 A places a metal plate behind the insulating component as an auxiliary cathode, the cations may bombard the metal plate with high energy under the traction of the electric field, greatly reducing the growth rate of the coating on the surface of the insulating component.

[0005] In general, the current field of plasma vapor deposition technology lacks effective and reasonable technology to overcome the inherent characteristics of the insulating medium surface that is difficult to form a stable plasma sheath, and to achieve controllable energy of the incident particles, thereby significantly improving the quality and adhesion of the coating. Summary of the invention

[0006] The purpose of the present invention is to provide a plasma physical vapor deposition auxiliary device on the surface of a dielectric insulating component, which uses an equipotential metal mesh cage to effectively control the plasma sheath structure formed on its surface, realize electric field acceleration of the incident plasma, impart controllable incident energy, and facilitate the energetic particles to penetrate the mesh cage and be incident on the surface of the dielectric insulating component. A purely mechanically driven brush mechanism is used to remove charge accumulation on the surface of the dielectric component during the deposition process, thereby eliminating its adverse effects on the coating quality.

[0007] In order to achieve the above-mentioned purpose, the present invention is implemented through the following technical solutions: a plasma physical vapor deposition auxiliary device on the surface of a dielectric insulating component, comprising an equipotential metal conductive mesh cage, a gear system and a brush mechanism; the equipotential metal conductive mesh cage is arranged between the dielectric insulating component and the grounded vacuum chamber furnace wall; and is riveted on a workpiece revolving turntable connected to a bias power supply; a stable and controllable plasma sheath structure is formed at the front end of the dielectric insulating component through the equipotential metal conductive mesh cage; the gear system is in driving connection with the brush mechanism; the gear system drives the brush mechanism to remove positive charge accumulation on the surface of the dielectric insulating component and the coating growth surface.

[0008] As a further improvement of the technical solution of the present invention, the brush mechanism includes a brush shaft with a round head at the bottom end, a transmission cylinder welded to the brush shaft, and an upper connecting rod welded and fixed to the brush shaft; the actuating cylinder includes an outer cylinder and an inner cylinder; the outer cylinder is welded to the brush shaft; the inner cylinder is movably sleeved inside the outer cylinder; a contact ball is welded at one end of the inner cylinder, and a spring is welded at the other end; the spring is connected to a lower connecting rod through a spring; the spring passes through a guide groove opened on the brush shaft; one end of the lower connecting rod is welded to the gear system, and a slot is provided at the other end; the upper connecting rod is integrated with the lower connecting rod through the slot.

[0009] As a further improvement of the technical solution of the present invention, the gear system includes a revolving plate with an internal gear, a first meshing gear, a second meshing gear and a third meshing gear; the revolving plate is transmission-connected to the first meshing gear through the internal gear; the first meshing gear meshes with the second meshing gear; the upper surface of the second meshing gear is respectively welded with an elevation difference arc segment and a gear segment; the outer edge of the second meshing gear is tangent to the axis of the brush shaft; when the second meshing gear rotates, the elevation difference arc segment passes through the ball at the bottom end of the brush shaft, causing the brush shaft to rise; the axis of the gear segment coincides with the axis of the second meshing gear; the gear segment is tangent to the third meshing gear through rotation; one end of the lower connecting rod is welded to the third meshing gear.

[0010] As a further improvement of the technical solution of the present invention, the brush shaft is movably mounted on the inner through hole shaft; the inner through hole shaft is fixed to the chassis of the vacuum furnace body through a bearing seat.

[0011] As a further improvement of the technical solution of the present invention, the axis of the brush shaft coincides with the axis of the inner through hole shaft, and the brush shaft passes through the inner through hole shaft; a rivet groove is provided at the upper end of the inner through hole shaft, and is connected to the rivet groove through a rivet pin on the brush shaft.

[0012] As a further improvement of the technical solution of the present invention, the equipotential metal conductive mesh cage is riveted on the orbiting disk connected to the bias power supply; the equipotential metal conductive mesh cage is a cylindrical tube; the diameter D0+ of the equipotential metal conductive mesh cage is determined by the orbital diameter D0 of the workpiece in the vacuum chamber and the working air pressure, and the diameter D0+ of the equipotential metal conductive mesh cage is 10 to 80 mm larger than D0.

[0013] As a further improvement of the technical solution of the present invention, the mesh size of the equipotential metal conductive mesh cage is 4 to 9 mm. 2 .

[0014] As a further improvement of the technical solution of the present invention, when the working gas pressure is in the range of 0.1 to 5 Pa, the distance between the equipotential metal conductive mesh cage and the dielectric insulating component is 50 mm.

[0015] As a further improvement of the technical solution of the present invention, the equipotential metal conductive mesh cage is made of 304 grade austenitic stainless steel wire; the diameter of the stainless steel wire is 0.5-1 mm.

[0016] As a further improvement of the technical solution of the present invention, the brush shaft, the upper connecting rod, the lower connecting rod, the elevation difference arc segment and the gear segment are all made of 304 stainless steel.

[0017] The present invention has the following beneficial effects:

[0018] The present invention utilizes an equipotential metal mesh cage to effectively control the plasma sheath structure formed on its surface, realizes electric field acceleration of incident plasma, imparts controllable incident energy, and facilitates energetic particles to penetrate the mesh cage and be incident on the surface of a dielectric insulating component.

[0019] The present invention utilizes a purely mechanically driven brush mechanism to remove charge accumulation on the surface of a dielectric component during the deposition process, thereby eliminating the adverse effects of the charge accumulation on the coating quality.

[0020] Compared with existing traditional devices and deposition technologies, the deposition rate, bonding strength and surface finish of the coating prepared on the surface of the dielectric insulating component in the present invention are greatly improved, providing a guarantee for improving the stability and reliability of the coating quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Other features, objects and advantages of the present invention will become more apparent from the detailed description of non-limiting embodiments made with reference to the following drawings:

[0022] Figure 1 The figure is a schematic diagram of the assembly of a plasma physical vapor deposition auxiliary device on the surface of a dielectric insulating component of the present invention.

[0023] Figure 2The figure is a schematic diagram of the gear system structure of the drive brush mechanism of the present invention.

[0024] Figure 3 It is a structural schematic diagram of the brush mechanism of the present invention.

[0025] In the figure: 10-revolving disk; 20-equipotential metal mesh cage; 30-workpiece rotation frame; 40-brush mechanism; 11-first meshing gear; 12-second meshing gear; 13-gear segment; 14-elevation difference arc segment; 41-brush shaft; 42-upper connecting rod; 43-lower connecting rod; 44-third meshing gear; 45-strip; 46-spring; 47-actuator; 48-contact ball; 49-riveting groove; 401-bearing seat; 402-inner through hole shaft. DETAILED DESCRIPTION

[0026] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments. The exemplary embodiments and descriptions of the present invention are used to explain the present invention, but are not intended to limit the present invention.

[0027] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, upper end, lower end, top, bottom...) are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0028] In the present invention, unless otherwise clearly defined and limited, the term "connection" should be understood in a broad sense, for example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0029] In addition, in the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features; in addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0030] The present invention is further described in detail below in conjunction with the accompanying drawings.

[0031] See also Figures 1 to 3 The present invention provides a technical solution: a plasma physical vapor deposition auxiliary device for the surface of a dielectric insulating component. In view of the existing technical problems in the field of plasma physical vapor deposition coatings of dielectric insulating materials, the present invention adopts two key technologies: 1) an equipotential metal conductive mesh cage is set between the dielectric insulator and the grounded vacuum chamber furnace wall to increase and effectively control the energy of particles bombarding the surface of the dielectric insulating component and the surface of the growing coating; 2) a brush designed with a gear structure is used to remove the positive charge accumulation on the surface of the dielectric insulating component and the surface of the growing coating. The present invention achieves: establishing a stable plasma sheath near the dielectric insulating component; and periodically taking away the positive charges accumulated on the surface. The technology of the present invention can achieve a high-quality, high-bonding coating on the surface of a dielectric insulating material.

[0032] The surface potential of dielectric insulating materials when energized is affected by many factors, including the electrical properties of the material, environmental conditions, and surface conditions. Along the direction of the current, the field strength drops sharply at the inflow end of the current, and the electric field strength at the outflow end approaches 0V, or approaches the voltage of the surrounding environment (floating potential). When a dielectric insulating component is placed in a plasma environment as an electrode and a bias is applied to the electrode: if a DC bias is applied (the positive electrode is grounded), the potential of the free surface of the insulating dielectric material facing the plasma is 0, and there is no potential difference between the positive and negative electrodes, and effective electric field energy cannot be provided to the charged particles in the plasma. If an AC bias is applied, a sheath will be formed in the initial stage (the voltage drop of the sheath V sheath ), but as the positive charge accumulates on the surface, the voltage drop value decreases until it approaches 0V, and the sheath disappears rapidly. The disappearance time is related to the positive charge accumulation speed on the dielectric insulation surface. After the sheath disappears, the dielectric insulation surface potential is in a suspended potential. When there is no plasma sheath on the surface of the dielectric insulation component, the cations in the plasma cannot be accelerated by the electric field to obtain high impact energy during most of the AC cycle. And the higher density of positive charges accumulated on the surface of the dielectric insulation component produces electrostatic repulsion on the incident cations, which reduces the adsorption of the incident cations on the coating growth surface on the one hand, and weakens the energy of the incident adsorbed particles on the other hand.

[0033] The present invention adopts an equipotential metal mesh cage 20, and forms a stable and controllable plasma sheath structure in front of the equipotential metal mesh cage 20. The voltage drop of the sheath is equal to the voltage applied by the bias power supply. When using an AC bias, the sheath voltage drop change response is synchronized with the bias power supply. Under the guidance of the sheath voltage drop, the cations in the plasma are accelerated and obtain high energy to be incident on the surface of the dielectric insulating component. The equipotential metal mesh cage 20 is a cylindrical cylinder, and its diameter is determined by the orbital diameter D0 of the workpiece in the vacuum chamber and the working gas pressure, which is D0+(10~80)mm. The material of the equipotential metal mesh cage 20 is made of a conductive metal with a certain high temperature resistance, and the diameter of the metal wire is 0.5~1mm; the size of the mesh of the mesh cage is 4~9mm 2 The equipotential metal mesh cage 20 is conductively riveted on the workpiece revolving turntable connected to the bias power supply. This size design ensures: 1) the mesh density of the equipotential metal mesh cage 20 (4 to 9 mm 2 ) allows the formation of an almost cylindrical equipotential surface, forming a cylindrical sheath in front of the mesh cage facing the plasma incidence direction, thereby applying an effective voltage to the incident cations and enhancing the energy of the cations; 2) a portion of the incident cations are captured by the metal mesh; but the mesh is hollow, which allows most of the accelerated cations to penetrate the mesh and bombard the surface of the dielectric insulating component; 3) The cations that penetrate the mesh will be in the equipotential zone before reaching the surface of the dielectric insulating component. The design of a distance of 50 mm between the mesh and the surface of the dielectric insulating component ensures that under normal physical vapor deposition working pressure (0.1~10Pa), the incident cations basically do not collide with other particles and lose incident energy.

[0034] The accumulation of positive charges on the surface of dielectric insulating materials is inevitable. This phenomenon affects the quality and adhesion of the coating, and in severe cases even causes sparks and breakdown on the surface of dielectric insulating ceramics. These accumulated positive charges must be removed from time to time. Figure 3 The brush mechanism shown in the attached Figure 2 Driven by the gear system shown, a conductive metal ball is periodically used to contact the surface of the dielectric insulating component, thereby taking away the positive charges accumulated on the surface of the dielectric insulating component. Figure 3 The brush mechanism 40 shown is mounted and fixed on the furnace bottom of the vacuum chamber through a bearing seat 401 connected thereto.

[0035] like Figure 3As shown, the brush mechanism 40 is composed of a brush shaft 41 with a round head, an actuator cylinder 47 welded to the brush shaft, and a connecting rod 42 welded and fixed to the brush shaft. The actuator cylinder 47 includes an outer cylinder and an inner cylinder. The outer cylinder is welded to the brush shaft 41. A contact ball 48 is welded to one end of the inner cylinder, and a spring 46 is welded to the other end. The spring is welded to the lower connecting rod 43 through a spring 45. The spring 45 passes through a guide groove opened on the brush shaft 41. One end of the lower connecting rod 43 is welded to the third meshing gear 44, and the other end has a card slot. The brush shaft 41 can move up and down along the axis. When it moves upward, it drives the upper connecting rod 42 to move together. The connecting rod 42 is disengaged from the slot of the lower connecting rod 43, releasing the spring. Under the action of the spring restoring force, the contact ball 48 pops out and contacts the surface of the component. When it falls, it is integrated with the lower connecting rod through the slot, and driven by the meshing gear, the spring is tightened around the brush shaft to pull the contact ball back. The third meshing gear 44 rotates around the inner through-hole shaft 402, and its bearing seat 401 is fixed on the chassis of the vacuum furnace body. The axis of the brush shaft 41 coincides with the axis of the inner through-hole shaft 402 and passes through the latter. The upper end of the inner through-hole shaft 402 is provided with a riveting groove 49, which is connected to 402 through the riveting pin on the brush shaft. The riveting position also serves as a height limit for the brush shaft.

[0036] like Figure 2 As shown, the up and down movement and rotational movement of the brush shaft 41 along its axis are completed by a set of gear systems and accessories attached to the gears. The revolving disk 10 connected to the bias power supply has an internal gear, which is linked to the first meshing gear 11 and transmits the rotation to the second meshing gear 12. Two appendages, namely the elevation difference arc segment 14 and the gear segment 13, are welded and fixed to the upper surface of the second meshing gear 12. The outer edge of the second meshing gear 12 is tangent to the axis of the brush shaft 41. When the second meshing gear 12 rotates, the elevation arc segment 14 passes through the ball at the bottom end of the brush shaft 41, causing the latter to rise. At this time, the riveting pin on the brush shaft 41 is lifted, and the brush shaft 41 is separated from the inner through-hole shaft 402; the upper connecting rod 42 is separated from the lower connecting rod 43, the spring 45 is relaxed, and the brush ball 48 contacts the surface of the dielectric insulating component. When the brush shaft 41 leaves the elevation arc segment 14, the brush shaft 41 falls, and the connecting rod and the pin are riveted; at this time, due to the height limit of the riveting groove 49, the bottom ball of the brush shaft 41 is suspended in the air and does not contact the upper surface of the second meshing gear 12. A gear segment 13 is welded on the upper surface of the second meshing gear 12, and the axis of the latter coincides with the axis of the second meshing gear 12. When the second meshing gear 12 rotates to make the gear segment 13 tangential to the third meshing gear 44, the rotation of the third meshing gear 44 drives the brush shaft 41 to rotate, thereby tightening the mainspring 45, driving the spring 46, and retracting the contact ball 48. The second meshing gear 12 rotates one circle, completing the contact between the contact ball 48 and the surface of the dielectric insulating component, and taking away the positive charges accumulated on the surface of the dielectric insulating component.

[0037] The above device of the present invention is added to various plasma physical vapor deposition devices, for example, referring to Figure 1 Installing the equipotential metal mesh cage 20 and the brush mechanism 40 of the present invention in the vacuum chamber of the deposition device can effectively improve and control the energy of particles bombarding the surface of the growing coating, avoid sparking caused by charge accumulation on the surface of the growing coating, and effectively obtain various high-quality and high-bonding coatings on the surface of the dielectric insulating component.

[0038] Specifically, in the present embodiment, 304 grade austenitic stainless steel wire is used when manufacturing the equipotential metal mesh cage 20; the preferred diameter of the steel wire is 0.5 mm.

[0039] Specifically, in this embodiment, the brush shaft 41, the upper connecting rod 42, the lower connecting rod 43, the elevation difference arc segment 14, the gear segment 13 and each gear are made of 304 stainless steel.

[0040] Specifically, in this embodiment, when the working gas pressure is in the range of 0.1-5 Pa, the distance between the equipotential metal mesh cage 20 and the dielectric insulating component is 50 mm.

[0041] Example:

[0042] In order to better understand the present invention, the present invention is described in detail below in conjunction with an embodiment, but the embodiments of the present invention are not limited thereto. The vacuum equipment used in the embodiment of the present invention is a commercially available Hauzer 850 coating system. A metal mesh cage 20 is designed and manufactured according to the size of the system's rotating disk and the size of the component self-rotating frame, and is anchored on the rotating disk as required; and is threadedly fixed on the floor of the vacuum chamber of the Hauzer 850 coating system. Figure 2 and 3 The 304 stainless steel gear transmission system shown includes a first meshing gear 11, a second meshing gear 12 and a third meshing gear 44. Figure 3 The brush mechanism 40 shown in the figure has a caliper with a height of 100 mm, one end of which can be placed in the riveting groove at the upper end of the inner through hole shaft 402, and the other end of which has a riveting groove that can be connected to the pin on the brush shaft 41. After tightening the brush shaft 41 and placing the caliper in the riveting groove 49 at the upper end of the inner through hole shaft 402, the retracting and releasing function of the brush can be stopped.

[0043] The thickness of the coating is t f The step thickness tester is used for characterization; except for the pure copper coating which is characterized by the hundred grid method, the bonding strength of the coating F c The scratch test method is used to characterize the surface roughness R of the coating. aThe contact profiler was used for testing and characterization. Table 1 lists the relevant preparation parameters of DC magnetron sputtering of Cr on the surface of the glass sheet. The glass sheet used is a commercially available quartz glass sheet with a thickness of 2 mm, a length and a width of 50 and 100 mm respectively; the table includes the metal mesh diameter d0, the metal mesh size (area A), the minimum distance S between the metal mesh and the workpiece, the brush contact frequency F, the vacuum chamber working pressure P during deposition, the sputtering power W, the bias type B and size V b , deposition time Time, deposition temperature Tep, coating coat, etc.; Table 2 gives the test characterization results of the coating.

[0044] Table 1 Process parameters for preparing metal Cr coating on glass surface

[0045]

[0046] Table 2 Performance characterization of metal Cr coating prepared on glass surface

[0047] <![CDATA[Coating thickness t f (μm)]]> <![CDATA[Coating adhesion force F c (N)]]> <![CDATA[Coating surface roughness R a (μm)]]> Example 1 Coating peeling off after baking Not obtained Not obtained Example 2 1.1 30N 0.02

[0048] Table 3 lists the relevant preparation parameters for the cathode arc preparation of TiN on the surface of the corundum sheet. The corundum sheet used is commercially available, with a thickness of 2 mm, a length and a width of 30 and 50 mm, respectively. The table includes the metal mesh diameter d0, the metal mesh size (area A), the minimum distance S between the metal mesh and the workpiece, the brush contact frequency F, the vacuum chamber working pressure P during deposition, and the target current I c , Bias type B and size V b , deposition time Time, deposition temperature Tep, coating coat, etc.; Table 4 gives the test characterization results of the coating.

[0049] Table 3 Process parameters for preparing TiN coating on corundum surface

[0050]

[0051] Table 4 Performance characterization of TiN coating prepared on corundum surface

[0052] <![CDATA[Coating thickness t f (μm)]]> <![CDATA[Coating adhesion force F c (N)]]> <![CDATA[Coating surface roughness R a (μm)]]> Example 3 0.9 20 0.18 Example 4 1.5 44 0.11

[0053] Table 5 lists the relevant preparation parameters for preparing Cu coating on the surface of polycarbonate PC by magnetron sputtering. The PC sheet used is commercially available with a thickness of 2 mm and a length and width of 100 mm and 100 mm, respectively. The table includes the metal mesh diameter d0, the metal mesh size (area A), the minimum distance S between the metal mesh and the workpiece, the brush contact frequency F, the vacuum chamber working pressure P during deposition, the target power W, the bias type B and size V b , deposition time Time, deposition temperature Tep, coating coat, etc.; Table 6 gives the test characterization results of the coating.

[0054] Table 5 Process parameters for preparing metal Cu coating on PC surface

[0055]

[0056] Table 6 Performance characterization of metal Cu coating prepared on PC surface

[0057] <![CDATA[Coating thickness t f (μm)]]> <![CDATA[Coating adhesion force F c (N)]]> <![CDATA[Coating surface roughness R a (μm)]]> Example 5 0.6 Failed the Baige test 0.04 Example 6 1.3 Passed the Baige test 0.03

[0058] From the comparison of several embodiments, the present invention is beneficial to improving the rate of depositing coatings on the surface of dielectric insulating components, surface roughness and coating bonding strength. The above-mentioned embodiments only express several implementation methods of the present invention, and their descriptions are relatively specific and detailed, but they cannot be understood as limiting the scope of protection of the present invention. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be based on the attached claims.

[0059] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0060] The core technology of the present invention is the core equipotential metal mesh cage and brush device for improving the quality and bonding strength of plasma vapor deposition coatings on the surface of dielectric insulating components, as well as the method of using these devices to implement physical vapor deposition of dielectric insulator components. The present invention uses an equipotential metal mesh cage to effectively control the plasma sheath structure formed on its surface, realize electric field acceleration of the incident plasma, and impart controllable incident energy; and facilitate the energized particles to be incident from the equipotential metal mesh cage to the surface of the dielectric insulating component. The present invention uses a purely mechanically driven brush mechanism to remove charge accumulation on the surface of the dielectric component during the deposition process, eliminating its adverse effects on the coating quality. Compared with existing traditional devices and deposition technologies, the deposition rate, bonding strength and surface finish of the coating prepared on the surface of the dielectric insulating component by the present invention are greatly improved; more importantly, the present invention provides a guarantee for improving the stability and reliability of the coating quality.

[0061] The technical solutions provided by the embodiments of the present invention are introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the embodiments of the present invention. The description of the above embodiments is only applicable to help understand the principles of the embodiments of the present invention. At the same time, for those skilled in the art, according to the embodiments of the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A plasma physical vapor deposition auxiliary device for a dielectric insulating component surface, characterized in that: The invention comprises an equipotential metal conductive mesh cage, a gear system and a brush mechanism; the equipotential metal conductive mesh cage is arranged between a dielectric insulating component and a grounded vacuum chamber furnace wall, and is riveted on a workpiece revolving turntable connected to a bias power supply; a stable and controllable plasma sheath structure is formed at the front end of the dielectric insulating component by the equipotential metal conductive mesh cage; the gear system is in driving connection with the brush mechanism; the gear system drives the brush mechanism to remove positive charge accumulation on the surface of the dielectric insulating component and the coating growth surface.

2. The plasma physical vapor deposition auxiliary device for dielectric insulating component surface according to claim 1, characterized in that: The brush mechanism comprises a brush shaft with a round head at the bottom end, a transmission cylinder welded to the brush shaft, and an upper connecting rod welded and fixed to the brush shaft; the actuating cylinder comprises an outer cylinder and an inner cylinder; the outer cylinder is welded to the brush shaft; the inner cylinder is movably sleeved inside the outer cylinder; a contact ball is welded to one end of the inner cylinder, and a spring is welded to the other end; the spring is connected to the lower connecting rod through a spring; the spring passes through a guide groove opened on the brush shaft; one end of the lower connecting rod is welded to the gear system, and a slot is provided at the other end; the upper connecting rod is integrated with the lower connecting rod through the slot.

3. The plasma physical vapor deposition auxiliary device for dielectric insulating component surface according to claim 2, characterized in that: The gear system comprises a revolving plate with an internal gear, a first meshing gear, a second meshing gear and a third meshing gear; the revolving plate is connected to the first meshing gear through the internal gear; the first meshing gear meshes with the second meshing gear; the upper surface of the second meshing gear is respectively welded with a height difference arc segment and a gear segment; the outer edge of the second meshing gear is tangent to the axis of the brush shaft; when the second meshing gear rotates, the height difference arc segment passes through the ball at the bottom end of the brush shaft, causing the brush shaft to rise; the axis of the gear segment coincides with the axis of the second meshing gear; The gear segment is tangent to the third meshing gear through rotation; one end of the lower connecting rod is welded to the third meshing gear.

4. The plasma physical vapor deposition auxiliary device for dielectric insulating component surface according to claim 2, characterized in that: The brush shaft is movably mounted on the inner through hole shaft; the inner through hole shaft is fixed on the chassis of the vacuum furnace body through a bearing seat.

5. The plasma physical vapor deposition auxiliary device for dielectric insulating component surface according to claim 4, characterized in that: The axis of the brush shaft coincides with the axis of the inner through hole shaft, and the brush shaft passes through the inner through hole shaft; a riveting groove is provided at the upper end of the inner through hole shaft, and is connected to the riveting groove through a riveting pin on the brush shaft.

6. The plasma physical vapor deposition auxiliary device for dielectric insulating component surface according to claim 3, characterized in that: The equipotential metal conductive mesh cage is riveted on the orbiting disk connected to the bias power supply; the equipotential metal conductive mesh cage is a cylindrical tube; the diameter D0+ of the equipotential metal conductive mesh cage is determined by the orbital diameter D0 of the workpiece in the vacuum chamber and the working air pressure, and the diameter D0+ of the equipotential metal conductive mesh cage is 10 to 80 mm larger than D0.

7. The plasma physical vapor deposition auxiliary device for dielectric insulating component surface according to claim 1, characterized in that: The mesh size of the equipotential metal conductive mesh cage is 4 to 9 mm 2 .

8. The plasma physical vapor deposition auxiliary device for dielectric insulating component surface according to claim 1, characterized in that: When the working gas pressure is in the range of 0.1 to 5 Pa, the distance between the equipotential metal conductive mesh cage and the dielectric insulating component is 50 mm.

9. The plasma physical vapor deposition auxiliary device for dielectric insulating component surface according to claim 1, characterized in that: The equipotential metal conductive mesh cage is made of 304 grade austenitic stainless steel wire; the diameter of the stainless steel wire is 0.5-1 mm.

10. The plasma physical vapor deposition auxiliary device for dielectric insulating component surface according to claim 1, characterized in that: The brush shaft, the upper connecting rod, the lower connecting rod, the elevation difference arc section and the gear section are all made of 304 stainless steel.

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