Manufacturing method and component

Abstract

A method for manufacturing a member for a plasma processing apparatus includes: a step (A) of preparing a core material having a shape similar to and smaller than a final shape of an electrode; a step (B) in which a SiC laminated part is formed on the core material by means of a film formation device; and a step (C) for forming a SiC layer by removing at least a portion of the SiC laminated portion and processing the SiC layer into the final shape. As a result, a component for a plasma processing device having SiC can be manufactured with high precision.

Description

Technical Field

[0001] The present disclosure relates to a manufacturing method and a component. Background Art

[0002] The electrode used as a component of the plasma processing device is manufactured by, for example, taking out silicon carbide (SiC) formed on a predetermined component and then cutting the SiC into a desired shape (perforating a plurality of through holes for ejecting a processing gas, etc.). SiC has the advantages of excellent hardness, heat resistance and chemical stability, but has the disadvantages of taking time to form a film and being difficult to process.

[0003] For example, Patent Document 1 discloses a method for manufacturing a shield formed of SiC and exposed in a plasma processing space. In manufacturing the shield, a SiC portion is formed from a graphite member, and then the member is removed from the SiC portion to obtain a shield of a target shape.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: U.S. Patent No. 10096471 Summary of the invention

[0007] Problem that the invention aims to solve

[0008] The present disclosure provides a technology capable of manufacturing a component for a plasma processing apparatus having SiC with high precision.

[0009] Solutions for solving problems

[0010] According to one embodiment of the present disclosure, there is provided a method for manufacturing a component for a plasma processing device, the method comprising the following steps: step (A), preparing a core material, the shape of the core material being similar to and smaller than a final shape of the component; step (B), forming a SiC stacking portion on the core material by performing SiC film formation; and step (C), forming a SiC layer by removing at least a portion of the SiC stacking portion and processing it into the final shape.

[0011] Effects of the Invention

[0012] According to one embodiment, a component for a plasma processing apparatus including SiC can be manufactured with high precision. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 FIG. 1 is a schematic diagram showing a plasma processing apparatus to which an electrode according to an embodiment is applied.

[0014] Figure 2It is a longitudinal cross-sectional view showing an enlarged structure of an electrode according to the first embodiment.

[0015] Figure 3 is a flow chart showing a method for manufacturing an electrode.

[0016] Figure 4 (A) is a longitudinal cross-sectional view showing a member before processing after the core material preparation step. Figure 4 (B) is a longitudinal cross-sectional view showing the processed body after the core material processing step. Figure 4 (C) is a longitudinal cross-sectional view showing the film-formed product after the SiC forming step. Figure 4 (D) is a longitudinal cross-sectional view showing the upper electrode after the final shape processing step.

[0017] Figure 5 (A) is a longitudinal cross-sectional view showing a member after going through the member preparation step according to the reference example. Figure 5 (B) is a longitudinal cross-sectional view showing a film-formed product after the SiC forming step according to the reference example. Figure 5 (C) is a longitudinal cross-sectional view showing the upper electrode after the final shape processing step according to the reference example.

[0018] Figure 6 (A) is an explanatory diagram illustrating a manufacturing state of an electrode having a hole portion without a tapered portion. Figure 6 (B) is an explanatory diagram illustrating a manufacturing state of an electrode having a hole with a tapered portion according to a modification example.

[0019] Figure 7 It is a longitudinal cross-sectional view showing the flow of the method for manufacturing an electrode according to the second embodiment.

[0020] Figure 8 It is a longitudinal cross-sectional view showing the flow of the method for manufacturing an electrode according to the third embodiment.

[0021] Fig. 9 It is a longitudinal cross-sectional view showing the flow of a method for manufacturing an electrode according to the fourth embodiment.

[0022] Fig.10 It is a longitudinal cross-sectional view showing the flow of a method for manufacturing an electrode according to the fifth embodiment. DETAILED DESCRIPTION

[0023] Hereinafter, the mode for implementing the present disclosure will be described with reference to the drawings. In each of the drawings, the same components are denoted by the same reference numerals, and duplicate descriptions may be omitted.

[0024] like Figure 1As shown, the electrode (upper electrode 50) manufactured by the manufacturing method according to one embodiment is one of the components for the plasma processing device 1 exposed in the plasma processing space 10s of the plasma processing device 1. Figure 1 A configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1 will be described.

[0025] The plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11 in a manner facing the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The side wall 10a is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0026] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlet ports 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the plurality of gas inlet ports 13c. In addition, the shower head 13 includes an upper electrode (electrode) 50 made of a conductive material and a cooling plate 49. The upper electrode 50 has a plurality of through holes 52 constituting the plurality of gas inlet ports 13c, and the upper electrode 50 is exposed in the plasma processing space 10s. The cooling plate 49 supports the upper electrode 50.

[0027] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the respective gas source 21 to the showerhead 13 via the respective flow controller 22.

[0028] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) such as a source RF signal and a bias RF signal to a lower electrode (not shown) of the substrate support 11 and / or an upper electrode 50 of the shower head 13. Thus, plasma is formed from at least one processing gas supplied into the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of a plasma generating unit configured to generate plasma from one or more processing gases in the plasma processing chamber 10. In addition, by supplying a bias RF signal to the lower electrode of the substrate support 11, a bias potential can be generated on the substrate W to attract ion components in the formed plasma to the substrate W.

[0029] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is configured to be coupled to the lower electrode of the substrate support 11 and / or the upper electrode 50 of the shower head 13 via at least one impedance matching circuit to generate a source RF signal (source RF power) for generating plasma. In one embodiment, the source RF signal has a frequency in the range of 13 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may also be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are provided to the lower electrode of the substrate support 11 and / or the upper electrode 50 of the shower head 13. The second RF generating unit 31b is configured to be coupled to the lower electrode of the substrate support 11 via at least one impedance matching circuit to generate a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400 kHz to 13.56 MHz. In one embodiment, the second RF generator 31b may also be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are provided to the lower electrode of the substrate support 11. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0030] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is configured to be connected to the lower electrode of the substrate support 11 and generate a first DC signal. The generated first bias DC signal is applied to the lower electrode of the substrate support 11. In one embodiment, the first DC signal may also be applied to other electrodes such as electrodes in an electrostatic holding disk (holding disk: chuck). In one embodiment, the second DC generating unit 32b is configured to be connected to the upper electrode 50 of the shower head 13 and generate a second DC signal. The generated second DC signal is applied to the upper electrode 50 of the shower head 13. In various embodiments, at least one of the first DC signal and the second DC signal may also be pulsed. Furthermore, the first DC generating section 32 a and the second DC generating section 32 b may be provided additionally to the RF power source 31 , or may be provided alternatively to the second RF generating section 31 b .

[0031] The exhaust system 40 may be connected to, for example, a gas exhaust port 10 e provided at the bottom of the plasma processing chamber 10 .

[0032] Next, refer to Figure 2 The structure of the upper electrode 50 provided in the plasma processing apparatus 1 will be described.

[0033] As described above, the upper electrode 50 is arranged at the top, and generates plasma in the plasma processing space 10s by the RF power supplied from the power supply 30. In addition, the upper electrode 50 diffuses the processing gas supplied to the gas diffusion space 13b and flows into the plasma processing space 10s. Specifically, the upper electrode 50 has a substantially flat electrode body 51 (component body), and a plurality of through holes 52 penetrating two planes (upper surface and lower surface) of the electrode body 51.

[0034] The electrode body 51 constitutes the substantially entire top surface of the plasma processing space 10s, and can spread the supplied RF power in a planar manner. The electrode body 51 is formed, for example, in a perfect circular shape when viewed from above, and has a certain plate thickness from the center toward the periphery. The plate thickness of the electrode body 51 varies depending on the structure of the plasma processing chamber 10, but is preferably set in a range of, for example, about 10 mm to 20 mm.

[0035] The outer periphery of the electrode body 51 is formed with a step portion 511 obtained by cutting off the lower surface side. The shower head 13 is fixed by hooking the step portion 511 of the upper electrode 50 with a holding frame portion (cooling plate 49) protruding radially inward from the inner periphery of the plasma processing chamber 10 (see also FIG. Figure 1 ). Thus, the electrode body 51 is supported in the horizontal direction in a state facing the plasma processing space 10s (exposed in the plasma processing space 10s).

[0036] The upper electrode 50 appropriately reduces the conductivity of the processing gas supplied to the gas diffusion chamber 13b through the electrode body 51 and diffuses the processing gas, and allows the processing gas to flow into the plasma processing space 10s through the plurality of through holes 52 that penetrate the electrode body 51. For example, the plurality of through holes 52 are arranged at equal intervals from the center of the electrode body 51 toward the radial outside, and are arranged at equal intervals along the circumferential direction on the same radius. However, the intervals between the plurality of through holes 52 are not limited to equal intervals.

[0037] In addition, each through hole 52 is formed to be a perfect circle when viewed from above, and has an inner diameter in the range of about 1 mm to 5 mm. In addition, the size of each through hole 52 can be set to be the same as each other, or it can be set to be different from each other. For example, it can be formed so that the diameter of each through hole 52 close to the center of the electrode body 51 is small, while on the other hand, the diameter of each through hole 52 close to the outer edge of the electrode body 51 is large. In addition, it goes without saying that the number, configuration, shape, etc. of the through holes 52 can be arbitrarily designed according to the flow performance of the processing gas from the gas diffusion chamber 13b to the plasma processing space 10s.

[0038] Moreover, when observing the cross section along the plate thickness direction of the upper electrode 50, the upper electrode 50 is formed using two materials. Specifically, the upper electrode 50 has a core material 53 located inside, and a silicon carbide layer 54 (hereinafter referred to as SiC layer 54) covering the core material 53. In particular, the upper electrode 50 involved in this embodiment is formed by coating the entire surface of the core material 53 with the SiC layer 54.

[0039] The core material 53 is a member formed into a shape similar to the final shape of the upper electrode 50 and smaller than the final shape. The core material 53 is preferably composed of a material with high processing performance and heat resistance, for example, graphite (black lead) or SiC sintered body. In this embodiment, an example of using graphite as the core material 53 is shown. Graphite can withstand temperatures from extremely low temperatures to high temperatures (for example, 3000°C) in a non-oxidizing atmosphere. In addition, graphite is composed of hexagonal flake crystals of carbon, and the faces of each layer are connected by strong covalent bonds, but the layers are bonded by weak van der Waals forces, so the processing performance is excellent.

[0040] Therefore, the core material 53 formed of graphite can be easily processed into the target processed shape before the SiC layer is stacked (hereinafter referred to as the processed body 61). The thickness H1 of the core material 53 (the thickness at the portion without the step portion 511) is preferably set to 0.5 to 0.9 times the thickness H2 of the electrode body 51 in the final shape (the thickness at the portion without the step portion 511). As an example, it can be cited that when the thickness H2 of the electrode body 51 in the final shape is 10 mm, the thickness H1 of the core material 53 is set to 7 to 8 mm. In this way, by setting the thickness of the core material 53 to more than 50% of the thickness of the electrode body 51, the upper electrode 50 can be manufactured more easily.

[0041] On the other hand, for example, the SiC layer 54 is laminated on the surface of the core material 53 by subjecting the processed body 61 of the core material 53 to a film forming process based on a chemical vapor deposition (CVD: Chemical Vapor Deposition) method. Thus, the upper electrode 50 has a SiC layer 54 with few impurities. The SiC layer 54 formed in this way has strong covalent bonds, so it has high hardness, and the decrease in mechanical strength in the high temperature region is small. In addition, the SiC layer 54 has excellent heat resistance and can show sufficient durability even in the high-temperature plasma processing space 10s. The SiC layer 54 applied to the upper electrode 50 gradually volatilizes due to the plasma generated in the plasma processing space 10s, and the gas is discharged from the plasma processing space 10s under the action of the exhaust system 40. Thus, the gas is suppressed from becoming particles on the substrate W.

[0042] The SiC layer 54 is formed on both surfaces (upper surface, lower surface) and the peripheral surface of the core material 53 to cover the entire core material 53. Among them, it is preferred that the SiC layer 541 on the lower surface side of the core material 53 facing the plasma processing space 10s is formed to be thicker than the SiC layer 542 on the upper surface side opposite thereto. For example, it is appropriate to set the thickness of the SiC layer 541 on the lower surface side to be more than twice the thickness of the SiC layer 542 on the upper surface side. Thus, the upper electrode 50 can promote the extension of the life of the SiC layer 542 on the lower surface side that is easily in contact with plasma.

[0043] In addition, the SiC layer 54 involved in this embodiment is formed thinner than the core material 53. That is, the thickness of the SiC layer 54 (the thickness obtained by adding the SiC layer 542 on the upper surface side and the SiC layer 541 on the lower surface side) is set to be less than 50% of the plate thickness of the upper electrode 50. More preferably, the ratio of the thickness of the SiC layer 54 to the plate thickness of the upper electrode 50 is preferably set in the range of 10% to 40%. In the case where the ratio of the thickness is less than 10%, the coverage of the SiC layer 54 as the electrode body 51 becomes less, and the life of the anti-plasma may become too short. On the contrary, when the ratio of the thickness exceeds 40%, it takes time to form the SiC layer 54, and the productivity may be reduced.

[0044] For example, when the thickness of the upper electrode 50 is designed to be 10 mm, the thickness of the entire SiC layer 54 (the thickness obtained by adding the SiC layer 542 on the upper surface side and the SiC layer 541 on the lower surface side) is preferably set to 2 to 3 mm. In addition, as an example, when the overall thickness of the SiC layer 54 is 3 mm, the thickness of the SiC layer 541 on the lower surface side is set to 2 mm, and the thickness of the SiC layer 542 on the upper surface side is set to 1 mm. In this way, by making the thickness of the SiC layer 54 obtained by adding the SiC layer 542 on the upper surface side and the SiC layer 541 on the lower surface side thinner than the core material 53, the generation time of the SiC layer 54 can be shortened.

[0045] Next, refer to Figure 3 and Figure 4 The method for manufacturing the upper electrode 50 constructed as described above is described in detail. In the method for manufacturing the upper electrode 50, a core material preparation step (S1), a core material processing step (S2), a SiC layer forming step (S3), and a final shape processing step (S4) are performed in this order.

[0046] In the core material preparation step (S1), Figure 4 As shown in (A), the manufacturer prepares a pre-processing member 60 formed of graphite and having a shape larger than the shape of the processed body 61. For example, in the core material preparation step, the pre-processing member 60 is formed by appropriately cutting the obtained (purchased or manufactured) plate-shaped or block-shaped graphite. Of course, the obtained graphite itself can also be directly used as the pre-processing member 60.

[0047] In the next core material processing step (S2), the manufacturer forms a processed body 61 to be used as the core material 53 by cutting, grinding, etc. on the prepared pre-processing member 60. Figure 4As shown in (B), in the core material processing step, the upper surface and the lower surface of the pre-processed component 60 are cut to make the upper surface parallel to the lower surface, and the outer peripheral portion is cut out in a perfect circular shape from the pre-processed component 60. Thus, the pre-processed component 60 is formed into a disk shape having a flat upper surface and a lower surface and a circular outer peripheral surface.

[0048] Furthermore, in the core material processing step, a step 611 is formed by cutting off a portion of the outer periphery of the processed body 61, and a plurality of hole portions 61h are formed as the basis of the plurality of through holes 52 of the upper electrode 50. For example, the manufacturer uses a drill bit (not shown) or the like to drill a plurality of hole portions 61h having an inner diameter larger than the inner diameter of each through hole 52 at the formation position of each through hole 52.

[0049] In the next SiC layer forming step (S3), the manufacturer uses a CVD device (film forming device) not shown in the figure. Figure 4 As shown in (C), the SiC stacking portion 54p is formed on the surface (upper surface, lower surface, outer peripheral surface, inner peripheral surface of each hole portion 61h) of the processing body 61 to form a film-formed product 62. In the film formation using a CVD device, the processing body 61 is heated to a high temperature (for example, 1500°C) to generate a SiC film on the surface of the processing body 61. Since the graphite constituting the processing body 61 has heat resistance, the SiC stacking portion 54p is stacked on the surface of the processing body 61 while maintaining a good processing shape. In addition, SiC enters into each hole portion 61h of the processing body 61 as the film is formed, thereby closing each hole portion 61h. The film-formed product 62 obtained by film formation as described above has a SiC stacking portion 54p with a thickness slightly larger than the thickness of the SiC layer 54 in the final shape of the upper electrode 50.

[0050] Finally, in the final shape processing step (S4), the manufacturer performs processing such as cutting, grinding, and drilling on the film formed product 62, thereby Figure 4 The final shape of the upper electrode 50 is completed as shown in (D), that is, the electrode body 51 having the through hole 52. At this time, the manufacturer processes the upper electrode 50 to the designed plate thickness (the thickness of the SiC layer 54) by cutting the SiC stacked portion 54p on the upper and lower surfaces of the film formed product 62 to be flat. At this time, since there is a processed body 61 that has been processed in advance, the amount of SiC cutting is small. Therefore, even a SiC layer 54 with high hardness can be formed without taking time.

[0051] In addition, in the final shape processing step, the through hole 52 is formed in the SiC layer 54 that closes each hole portion 61h. Since the inner diameter of the through hole 52 is smaller than the inner diameter of each hole portion 61h, the SiC layer 54 having a thickness remains on the inner peripheral surface of each formed through hole 52. Thus, it is possible to avoid the graphite from being exposed in each through hole 52 of the upper electrode 50, and it is possible to suppress the plasma generated in the plasma processing space 10s from contacting the graphite in each through hole 52.

[0052] As described above, in the manufacturing method according to the present embodiment, the processed body 61 (core material 53) similar to the upper electrode 50 is first processed to form the SiC layer 54 on the processed body 61, and then the obtained film-formed product 62 is processed into the final shape. As a result, the SiC layer forming step, which takes time to form the film, can be performed in a short time and with high precision, thereby improving the manufacturing efficiency of the manufacturing method as a whole.

[0053] Here, refer to Figure 5 A conventional method for manufacturing the upper electrode 100 will be described as a reference example. Figure 5 As shown in (A), in the member preparation step, a member 101 that is very thin compared to the plate thickness of the final shape of the upper electrode 100 is prepared as a core material. For example, the member 101 has a thickness of 20% or less of the plate thickness of the upper electrode 100 .

[0054] Moreover, if Figure 5 As shown in (B), in the manufacturing method involved in the reference example, the SiC layer forming step (S3) is performed on the component 101 without performing the core material processing step (S2) to form a film formed product 102. In the SiC layer forming step, a CVD device is used to form a film for a period of time so that the SiC laminated portion 54p has a sufficient thickness relative to the thickness of the component 101. For example, in the SiC layer forming step, a SiC laminated portion 54p having a thickness of about 10 times the thickness of the component 101 is generated. Therefore, the SiC layer forming step takes a long time and the productivity decreases. In addition, the amount of processing gas used in the film formation increases, and the power consumed by heating increases, which will cost a huge amount of money.

[0055] Furthermore, in the manufacturing method according to the reference example, Figure 5In the final shape processing step (S4) after the SiC layer forming step shown in (C), the SiC stacked portion 54p formed on the film formed product 102 is processed to form the final shape of the upper electrode 50. Specifically, in the final shape processing step, the film formed product 102 is cut into a disk shape in a manner of sandwiching the component 101, and the component 101 is taken out, and on the other hand, the two generated SiC bodies 103 are cut out on both sides (upper surface side and lower surface side) of the component 101. Then, in the final shape processing step, the two SiC bodies 103 are adhered to each other to form a SiC structure 104, and the step portion 511 is formed by cutting the outer periphery of one SiC body 103. And, in the final shape processing step, a plurality of through holes 52 are bored in the SiC structure 104 to form the final shape of the upper electrode 100.

[0056] That is, in the manufacturing method involved in the reference example, the entire final shape of the upper electrode 50 composed of SiC is processed in the final shape processing step (S4). As mentioned above, SiC has high hardness and poor processing performance. Therefore, it takes time to process in the final shape processing step. As a result, in the manufacturing method involved in the reference example, the overall operating efficiency and processing accuracy of each step deteriorate, and the productivity of the upper electrode 50 decreases.

[0057] In contrast, in Figure 3 and Figure 4 In the manufacturing method according to the present embodiment shown, the previously processed body 61 is used as the core material 53, and the SiC layer 54 is formed on the surface of the processed body 61. As a result, the time taken for the SiC layer forming step of forming the SiC layer 54 and the final shape processing step of processing the SiC layer 54 can be greatly shortened. In particular, since the processing performance of the core material formed of graphite is high, it is possible to obtain a processed body 61 with good accuracy without spending time even in the core material processing step.

[0058] In addition, the manufacturing method disclosed in the present invention is not limited to the above-mentioned embodiment, and various modifications can be adopted. For example, the planar shape of the upper electrode 50 can be an appropriate shape according to the shape of the plasma processing chamber 10, etc., and can be an elliptical shape, a polygonal shape, etc. In this case, by using the processed body 61 having a shape similar to the final shape and smaller than the final shape as the core material 53 in the core material processing step, the SiC laminated portion 54p can be formed on its surface in a short time, and it can be processed smoothly until it reaches the final shape.

[0059] Figure 6 FIG. 1 is an explanatory diagram partially showing the steps of the manufacturing method according to the modification. Figure 6As shown in (A), when a hole portion 61h with a fixed inner diameter is formed in the workpiece 61 along the thickness direction in the core material processing step (see the left figure), sometimes SiC does not fully enter the hole portion 61h in the SiC layer forming step (see the middle figure). In this case, the film formed product 62 becomes a state with a cavity 62s. If the cavity 62s is large, when the through hole 52 is formed in the subsequent final shape processing step, a thinner SiC layer 54 (or a portion without the SiC layer 54) may be generated at the location of the cavity 62s (see the right figure).

[0060] Therefore, in the manufacturing method according to the modification, Figure 6 As shown in (B), in the core material processing step (S2), a tapered portion 61t (see the left figure) can be formed on the upper and lower surfaces of the hole portion 61h of the processed body 61 so that the side wall of the hole portion 61h expands toward each opening. Figure 6 In (B), the tapered portion 61t is formed on both the upper surface side and the lower surface side of the hole portion 61h, but the tapered portion 61t may exist only on one of the upper surface side and the lower surface side of the hole portion 61h.

[0061] As described above, by forming the tapered portion 61t in the core material processing step, SiC can be smoothly inserted into each hole portion 61h in the SiC layer forming step (S3). Thus, the generation of a cavity 62s in each hole portion 61h is suppressed (see the middle figure). In addition, the influence of the tapered portion 61t appears as a pit on the surface of the SiC layer 54, thereby guiding the formation position of the through hole 52.

[0062] When the through holes 52 are bored in the final shape processing step, the inner peripheral surface of each through hole 52 is formed to have a substantially uniform thickness in the plate thickness direction (see the right figure). That is, the inner peripheral surface of each through hole 52 of the upper electrode 50 can be well covered with the SiC layer 54, thereby suppressing the influence of plasma on the core material 53.

[0063] [Second embodiment]

[0064] Next, refer to Figure 7 In the manufacturing method according to the second embodiment, in the core material processing step (S2), as shown in FIG. Figure 7 As shown in the upper left figure, the pre-processing component 60 (refer to Figure 4 (A)) is processed to form a processed body 61A having a thickness more than twice that of the processed body 61 involved in the first embodiment. In addition, the processed body 61A is formed to have steps on the outer periphery of both the upper surface and the lower surface. In addition, each hole portion 61h is formed to penetrate the upper surface and the lower surface of the processed body 61A in the same manner as in the first embodiment.

[0065] Afterwards, if Figure 7 As shown in the middle left figure of , in the SiC layer forming step (S3), the SiC stacking portion 54p is stacked on the entire surface of the processed body 61A by a CVD device to form a film formed product 62A. In addition, in the SiC layer forming step, SiC enters each hole portion 61h of the processed body 61A, thereby closing each hole portion 61h with SiC.

[0066] Then, in the final shape processing step (S4), a dividing step is performed to cut the middle portion of the film formed product 62A in the thickness direction. Figure 7 In the lower left figure of FIG. 1 , the workpiece 61A is cut along two cutting lines CL (see the dotted lines), but it can also be cut along one cutting line CL depending on the thickness of the workpiece 61A. The workpiece 61A formed of graphite is smoothly separated from each other during the cutting operation of the splitting step. Figure 7 As shown in the upper right figure of , the film molded product 62A becomes two divided molded products 63A having substantially the same shape.

[0067] Furthermore, in the manufacturing method, after forming the two divided molded products 63A, Figure 7 As shown in the middle right figure of , a through hole forming step of forming each through hole 52 and a SiC processing step of processing the SiC layer 54 and the step portion 511 on the lower surface side (the side opposite to the split surface) of the split molded product 63A into a final shape are performed. Thus, the manufacturing method involved in the second embodiment can easily manufacture the upper electrode 50A having the SiC layer 54 on the lower surface side facing the plasma processing space 10s (exposed in the plasma processing space 10s). In addition, the through hole forming step and the SiC processing step can also be implemented before the splitting step.

[0068] As described above, the manufacturing method according to the second embodiment can efficiently manufacture two upper electrodes 50A by dividing the film formed product 62A, thereby making it possible to further reduce the manufacturing cost. In addition, the upper electrode 50A only needs to have the SiC layer 54 on the lower surface side facing the plasma processing space 10s, and even if the SiC layer 54 is not provided on the upper surface side near the gas diffusion space 13b, the influence of plasma can be sufficiently reduced.

[0069] [Third embodiment]

[0070] Next, refer to Figure 8The manufacturing method according to the third embodiment is described below. The manufacturing method according to the third embodiment differs from the manufacturing method according to the second embodiment in that a film forming step of forming a SiC thin film 54pb on the surface (upper surface) where the SiC laminated portion 54p is not formed is performed after the dividing step in the second embodiment. In addition, since the other steps of the manufacturing method are the same as those in the second embodiment, their detailed description is omitted.

[0071] In the film forming step, the thin film 54pb is formed only on the upper surface of the split molded product 63A by the CVD device. For example, the thickness of the thin film 54pb is set to be less than 30% of the thickness of the SiC laminated portion 54p on the lower surface side. Thus, the process can be completed in a short time even when the film forming step is performed. In addition, the upper electrode 50B formed through the through hole forming step and the SiC processing step also has the SiC layer 54 on the upper surface, thereby being able to effectively avoid the influence of the plasma in the gas diffusion space 13b.

[0072] [Fourth embodiment]

[0073] Next, refer to Fig. 9 The manufacturing method involved in the fourth embodiment is described below. In this manufacturing method, the difference from the manufacturing method of the electrode involved in the first to third embodiments is that a core material 70 formed of a SiC sintered body is used. SiC sintered bodies have the advantages of excellent heat resistance and low thermal expansion coefficient like graphite. In addition, the SiC sintered body is set as a porous body with fine pores, so that when the SiC film is stacked by the CVD method, SiC is easily attached to the surface of the core material 70.

[0074] A pre-processing member (not shown) made of SiC sintered body is formed by normal pressure or pressure sintering, hot pressing, etc., and processed in the core material processing step (S2) to form a processed body 71. When the processed body 71 (SiC sintered body) is used, the same method as the manufacturing method involved in the first to third embodiments can also be used.

[0075] exist Fig. 9, an example is shown in which a processed body 71 (a shape having a plurality of holes 71h and steps on both sides) is formed into the same shape as that of the second embodiment, and the subsequent manufacturing method also performs the same steps. That is, in the manufacturing method, the processed body 71 formed by the core material processing step (S2) is subjected to the SiC layer forming step (S3) to form a film-formed product 72. And, in the final shape processing step (S4), the film-formed product 72 is divided into two divided molded products 73 by a dividing step, and the final shape of the upper electrode 50C is formed by performing a through hole forming step and a SiC processing step. In this way, the manufacturing method of the electrode can easily form the upper electrode 50C having the core material 70 of the SiC sintered body. In addition, in the case of applying the SiC sintered body, it can also be set as follows in the same manner as the third embodiment: by performing the film forming step after forming the divided molded product 73, the upper surface of the core material 70 of the SiC sintered body is covered with a thin film 54pb of SiC.

[0076] [Fifth embodiment]

[0077] Next, refer to Fig.10 A method for manufacturing an electrode according to a fifth embodiment is described. In this manufacturing method, a core material 70 formed of a SiC sintered body is used in the same manner as in the fourth embodiment. However, in the core material processing step, a structure is set such that a plurality of holes 71h are not formed in a processed body 71A.

[0078] In the manufacturing method, the SiC layer forming step (S3) is performed on the processed body 71A to form a film-formed product 72A in which the processed body 71A is covered with the SiC layer 54 (SiC laminated portion 54p). In the final shape processing step (S4), two split molded products 73A are formed by the splitting step, and then the upper electrode 50D is manufactured by performing the through-hole forming step and the SiC processing step. In the through-hole forming step at this time, each through-hole 52 is formed in a manner that penetrates the core material 70 of the SiC sintered body and the SiC layer 54. Since the core material 70 of the SiC sintered body has a hardness that is substantially the same as (or lower than) that of the SiC layer 54, each through-hole 52 can be smoothly formed.

[0079] In addition, in the manufacturing method in which the plurality of holes 71h are not formed in the core material processing step (S2), for example, the film forming step may be performed after the splitting step, thereby covering the upper surface of the core material 70 of the SiC sintered body, and then the through hole forming step and the SiC processing step may be performed. Alternatively, the manufacturing method may also be a structure in which the through hole forming step and the SiC processing step are performed before the splitting step.

[0080] The embodiments disclosed above include the following aspects, for example.

[0081] (Note 1)

[0082] A manufacturing method is a manufacturing method for a component for a plasma processing device, the manufacturing method comprising the following steps:

[0083] Step (A), preparing a core material, wherein the shape of the core material is similar to and smaller than the final shape of the component;

[0084] Step (B), forming a SiC laminated portion on the core material by forming a SiC film; and

[0085] Step (C) is to form a SiC layer by removing at least a portion of the SiC stacked portion and processing the SiC layer into the final shape.

[0086] (Note 2)

[0087] The manufacturing method according to Supplement 1, wherein:

[0088] The component has a plurality of through holes,

[0089] In the step (C), the SiC layer is formed and the plurality of through holes are formed.

[0090] (Note 3)

[0091] According to the manufacturing method described in Supplementary Note 2, wherein,

[0092] In the step (A), the core material is prepared which has a plurality of holes that penetrate the core material in the thickness direction of the core material and are larger than the through holes.

[0093] (Note 4)

[0094] According to the manufacturing method described in Supplement 3,

[0095] In the step (A), the core material having the plurality of holes whose wall surfaces are formed in a tapered shape and expand toward the opening is prepared.

[0096] In the step (B), the plurality of holes are closed by the SiC.

[0097] (Note 5)

[0098] The manufacturing method according to any one of Supplements 1 to 4, wherein

[0099] The thickness of the core material prepared in the step (A) is 50% or more of the thickness of the final shape.

[0100] (Note 6)

[0101] The manufacturing method according to any one of Supplements 1 to 5, wherein

[0102] The component is an upper electrode arranged to face a substrate support portion of the support substrate,

[0103] In the step (C), the thickness of the SiC layer on the surface of the upper electrode facing the substrate support portion is made thicker than the thickness of the SiC layer on the surface of the upper electrode other than the surface.

[0104] (Note 7)

[0105] The manufacturing method according to any one of Supplements 1 to 6, wherein

[0106] In the step (C), the film-formed article having the SiC laminated portion is cut along a direction perpendicular to the thickness direction of the film-formed article.

[0107] (Note 8)

[0108] The manufacturing method according to any one of Supplements 1 to 7, wherein

[0109] The core material comprises carbon.

[0110] (Note 9)

[0111] According to the manufacturing method described in Supplementary Note 8,

[0112] The core material is formed of graphite.

[0113] (Note 10)

[0114] According to the manufacturing method described in Supplementary Note 8,

[0115] The core material is formed of a SiC sintered body.

[0116] (Note 11)

[0117] The manufacturing method according to any one of Supplementary Notes 1 to 10, wherein

[0118] In the step (B), the SiC laminated portion is formed by chemical vapor deposition.

[0119] (Note 12)

[0120] The method for manufacturing a component for a plasma processing apparatus according to any one of Supplements 1 to 11, wherein:

[0121] The member is a shower head that is disposed so that at least a portion thereof is exposed in a plasma processing space of the plasma processing apparatus, has a plurality of gas introduction ports, and can introduce gas into the plasma processing space through the gas introduction ports.

[0122] (Note 13)

[0123] A component is a component for a plasma processing device,

[0124] The component has a component body,

[0125] The component body has:

[0126] a core material having a shape similar to and smaller than a final shape of the component; and

[0127] The SiC layer is stacked on the surface of the core material and covers the core material.

[0128] (Note 14)

[0129] The component according to Appendix 13, wherein:

[0130] The core material comprises carbon.

[0131] (Note 15)

[0132] The component according to Appendix 14, wherein:

[0133] The core material is formed of graphite.

[0134] (Note 16)

[0135] The component according to Appendix 14, wherein:

[0136] The core material is formed of a SiC sintered body.

[0137] (Note 17)

[0138] A component according to any one of supplementary notes 13 to 16, wherein:

[0139] The component body has a through hole that penetrates the component body in a thickness direction of the component body.

[0140] (Note 18)

[0141] The component according to Appendix 17, wherein:

[0142] The core material has a plurality of holes larger than the through hole, and the wall surfaces constituting the plurality of holes are formed in a tapered shape that expands toward the opening.

[0143] The through hole is formed by covering the wall surface of each hole constituting the plurality of holes with the SiC layer.

[0144] (Note 19)

[0145] A component according to any one of supplementary notes 13 to 18, wherein:

[0146] The member is a shower head that is disposed so that at least a portion thereof is exposed in a plasma processing space of the plasma processing apparatus, has a plurality of gas introduction ports, and can introduce gas into the plasma processing space through the gas introduction ports.

[0147] The electrode manufacturing method and the electrode according to the above embodiment are examples of the manufacturing method and the component for a plasma processing device, and are not limited thereto. Other examples of the component for a plasma processing device include an exhaust net disposed at the gas exhaust port 10e.

[0148] The manufacturing methods and components involved in the embodiments disclosed herein are illustrative in all respects and are not restrictive. The embodiments can be modified and improved in various ways without departing from the attached claims and their gist. The matters recorded in the above-mentioned multiple embodiments can also adopt other structures within the scope of non-contradiction, and can be combined within the scope of non-contradiction.

[0149] The electrode disclosed in the present invention can also be applied to any type of device including Inductively Coupled Plasma (ICP), Radial Line Slot Antenna (RLSA), Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

[0150] This application claims the priority of Application No. 2022-120798 filed with the Japan Patent Office on July 28, 2022, and all its contents are incorporated herein by reference.

[0151] Description of Reference Numerals

[0152] 50: upper electrode; 52: through hole; 53, 70: core material; 54: SiC layer; 54p: SiC stacking part.

Claims

1. A manufacturing method is a manufacturing method for a component for a plasma processing device, the manufacturing method comprising the following steps: Step (A), preparing a core material, wherein the shape of the core material is similar to and smaller than the final shape of the component; Step (B), forming a SiC laminated portion on the core material by forming a SiC film; as well as Step (C) is to form a SiC layer by removing at least a portion of the SiC stacked portion and processing the SiC layer into the final shape.

2. The manufacturing method according to claim 1, wherein: The component has a plurality of through holes, In the step (C), the SiC layer is formed and the plurality of through holes are formed.

3. The manufacturing method according to claim 2, wherein: In the step (A), the core material is prepared which has a plurality of holes that penetrate the core material in the thickness direction of the core material and are larger than the through holes.

4. The manufacturing method according to claim 3, wherein: In the step (A), the core material having the plurality of holes whose wall surfaces are formed in a tapered shape and expand toward the opening is prepared. In the step (B), the plurality of holes are closed by the SiC.

5. The manufacturing method according to any one of claims 1 to 4, wherein: The thickness of the core material prepared in the step (A) is 50% or more of the thickness of the final shape.

6. The manufacturing method according to any one of claims 1 to 4, wherein: The component is an upper electrode arranged to face a substrate support portion of the support substrate, In the step (C), the thickness of the SiC layer on the surface of the upper electrode facing the substrate support portion is made thicker than the thickness of the SiC layer on the surface of the upper electrode other than the surface.

7. The manufacturing method according to any one of claims 1 to 4, wherein: In the step (C), the film-formed article having the SiC laminated portion is cut along a direction perpendicular to the thickness direction of the film-formed article.

8. The manufacturing method according to any one of claims 1 to 4, wherein: The core material comprises carbon.

9. The manufacturing method according to claim 8, wherein: The core material is formed of graphite.

10. The manufacturing method according to claim 8, wherein: The core material is formed of a SiC sintered body.

11. The manufacturing method according to any one of claims 1 to 4, wherein: In the step (B), the SiC laminated portion is formed by chemical vapor deposition.

12. The manufacturing method according to any one of claims 1 to 4, wherein: The member is a shower head that is disposed so that at least a portion thereof is exposed in a plasma processing space of the plasma processing apparatus, has a plurality of gas introduction ports, and can introduce gas into the plasma processing space through the gas introduction ports.

13. A component, which is a component for a plasma processing device, The component has a component body, The component body has: a core material having a shape similar to and smaller than a final shape of the component; and The SiC layer is stacked on the surface of the core material and covers the core material.

14. The component according to claim 13, wherein The core material comprises carbon.

15. The component according to claim 14, wherein The core material is formed of graphite.

16. The component according to claim 14, wherein The core material is formed of a SiC sintered body.

17. A component according to any one of claims 13 to 16, wherein The component body has a through hole that penetrates the component body in a thickness direction of the component body.

18. The component according to claim 17, wherein The core material has a plurality of holes larger than the through hole, and the wall surfaces constituting the plurality of holes are formed in a tapered shape that expands toward the opening. The through hole is formed by covering the wall surface of each hole constituting the plurality of holes with the SiC layer.

19. A component according to any one of claims 13 to 16, wherein The member is a shower head that is disposed so that at least a portion thereof is exposed in a plasma processing space of the plasma processing apparatus, has a plurality of gas introduction ports, and can introduce gas into the plasma processing space through the gas introduction ports.

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