Non-contact test method for notch contour of polished silicon wafer
By depositing films at the notched position of the polished silicon wafer, changing the surface gloss and roughness, and using a non-contact testing method, the problem of difficult to measure the notched profile of the polished silicon wafer in the prior art is solved, and high-precision detection and quality control are achieved.
CN119650453APending Publication Date: 2025-03-18SHANGHAI ADVANCED SILICON TECH CO LTD +1
0 Cites 0 Cited by
Patent Information
- Application Number
- CN202411860435.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-17
- Publication Date
- 2025-03-18
AI Technical Summary
Technical Problem
The prior art is difficult to accurately measure the notch profile of the polished silicon wafer, resulting in the inability to detect production process defects in time, affecting product quality and yield.
Method used
Using the non-contact testing method, by depositing the film at the notch position of the silicon wafer after polishing, the surface gloss and roughness are changed, so as to effectively collect laser signals in the high-gloss area and obtain accurate surface profile data.
Benefits of technology
Accurate measurement of the notch profile of the silicon wafer after polishing is achieved, the detection accuracy and product quality control level are improved, and the accuracy of optical test data is ensured.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention provides a non-contact test method for a notch outline of a polished silicon wafer. The non-contact test method comprises the following steps: providing a polished silicon wafer with a notch; depositing a layer of film at the gap position of the polished silicon wafer to change the glossiness and roughness of the surface of the gap; using a non-contact testing device to obtain surface contour data of the gap position after the film is deposited; and performing data analysis on the obtained surface contour data. The invention provides a non-contact testing method, which not only can effectively solve the problem that the notch outline of the polished silicon wafer cannot be represented in a non-destructive form in the prior art, improves the silicon wafer detection precision and the product quality control level, but also improves the surface state of the notch by depositing the film, thereby improving the quality of the silicon wafer. The laser signal of the high-glossiness area is effectively acquired, and the accuracy of optical test data is ensured.
Need to check novelty before this filing date? Find Prior Art