Housing and electronic device

Abstract

Embodiments of the present application provide a shell and an electronic device, and relate to the technical field of electronic device shells. The shell comprises a metal appearance piece and a protective stack, and the protective stack covers the surface of the metal appearance piece. The protective stack comprises an insulating protective layer and a wear-resistant protective layer arranged in a stack, and the wear-resistant protective layer is located on the side of the insulating protective layer away from the metal appearance piece. The setting of the protective stack comprising the insulating protective layer can reduce the risk of galvanic reaction when the metal appearance piece and other metal components with different materials from the metal appearance piece are in contact, thereby causing corrosion and damage of the metal appearance piece and other metal components. On this basis, the setting of the protective stack also comprises the wear-resistant protective layer, so that the protective stack not only plays an insulating role, but also plays a wear-resistant and scratch-resistant role, improving the protection effect of the protective stack on the metal appearance piece. Moreover, the wear-resistant protective layer can protect the insulating protective layer, reducing the risk of damage to the insulating protective layer.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application provide a shell and an electronic device, and relate to the technical field of electronic device shells. BACKGROUND

[0002] An electronic device includes a shell, which generally includes a metal appearance piece, such as a metal frame or a metal rotating shaft cover, etc. In the related art, the metal appearance piece has a high risk of damage, which affects the appearance of the electronic device. SUMMARY

[0003] Embodiments of the present application provide a shell and an electronic device, which reduce the risk of scratching and damaging the metal appearance piece of the shell.

[0004] In one aspect, embodiments of the present application provide a shell. The shell includes a metal appearance piece and a protective stack. The protective stack covers a surface of the metal appearance piece. The protective stack includes an insulating protective layer, and the insulating protective layer includes a plurality of sub-insulating layers stacked.

[0005] In embodiments of the present application, the protective stack is arranged to cover the surface of the metal appearance piece, so that the protective stack can protect the metal appearance piece. Moreover, the protective stack includes an insulating protective layer, so that the protective stack can have an insulating effect, and reduce the risk of galvanic reaction when the metal appearance piece and a metal component having a material different from the metal appearance piece come into contact, thereby causing corrosion and damage of the metal appearance piece and the metal component.

[0006] The insulating protective layer includes a plurality of sub-insulating layers stacked, which can increase the thickness of the insulating protective layer, thereby ensuring the insulating effect of the insulating protective layer, and improving the protection effect of the insulating protective layer on the metal appearance piece, reducing the risk of scratching the metal appearance piece, and improving the appearance effect of the electronic device. Moreover, compared with arranging an insulating protective layer having a large thickness, arranging the insulating protective layer including a plurality of sub-insulating layers stacked can reduce the risk of surface rupture of the insulating protective layer.

[0007] In some possible implementations, the plurality of sub-insulating layers include at least two of an oxide layer, a nitride layer, and an oxynitride layer. The at least two of the oxide layer, the nitride layer, and the oxynitride layer are alternately stacked. In this way, the insulating effect of the insulating protective layer can be ensured, and the risk of galvanic reaction when the metal appearance piece and a metal component having a material different from the metal appearance piece come into contact, thereby causing corrosion and damage of the metal appearance piece.

[0008] In some possible implementations, a material of the oxide layer includes Al2O3, SiO2, Si w Al z O yat least one of Si, Al, Ti, Cr, Nb, Ni, Mn, Mo, C. The material of the nitride layer includes Si3N4, AlN, Si w Al z N x at least one of Si, Al, Ti, Cr, Nb, Ni, Mn, Mo, C. The material of the nitride layer includes Si3N4, AlN, Si z O y N x , Al z O y N x , Si w Al z O y N x at least one of Si, Al, Ti, Cr, Nb, Ni, Mn, Mo, C. The material of the nitride layer includes Si3N4, AlN, Si

[0009] In some possible implementation manners, the protective stack includes a transition layer, the transition layer is located at a side of the insulating protective layer close to the metal appearance piece and is arranged in a stack with the insulating protective layer. In this way, the transition layer can transitionally connect the metal appearance piece and the insulating protective layer, improve the adhesion between the two, and reduce the risk of the insulating protective layer falling off relative to the metal appearance piece.

[0010] In some possible implementation manners, the transition layer includes a first sub-transition layer and a second sub-transition layer arranged in a stack, the first sub-transition layer is closer to the metal appearance piece relative to the second sub-transition layer. The material of the first sub-transition layer includes at least one of W, Cr, Ti, Si, Al, Nb, Ni, Mn, Mo, C. The material of the second sub-transition layer includes at least one of SiO2, Al2O3, Si z O y N x , TiO2, Cr2O3, Nb y O x In this way, the first sub-transition layer can transitionally connect the metal appearance piece and the second sub-transition layer, and the second sub-transition layer can transitionally connect the first sub-transition layer and the insulating protective layer, thereby improving the adhesion between the insulating protective layer and the metal appearance piece, reducing the risk of the insulating protective layer falling off relative to the metal appearance piece, and improving the flexibility of the first sub-transition layer and the second sub-transition layer in material selection.

[0011] In some possible implementation manners, the thickness of the first sub-transition layer ranges from 1 nm to 50 nm. The thickness of the second sub-transition layer ranges from 3 nm to 30 nm. It can be understood that, by setting the thickness of the first sub-transition layer to range from 1 nm to 50 nm, the thickness of the first sub-transition layer can be prevented from being too large (for example, greater than 50 nm) to increase the thickness of the protective stack, and the thickness of the first sub-transition layer can be prevented from being too small (for example, less than 1 nm) to affect the transition connection effect between the first sub-transition layer, the second sub-transition layer and the metal appearance. By setting the thickness of the second sub-transition layer to range from 3 nm to 30 nm, the thickness of the second sub-transition layer can be prevented from being too large (for example, greater than 30 nm) to increase the thickness of the protective stack, and the thickness of the second sub-transition layer can be prevented from being too small (for example, less than 3 nm) to affect the bonding effect between the second sub-transition layer, the first sub-transition layer and the insulating protective layer.

[0012] In some possible implementation manners, the thickness of the first sub-transition layer can range from 5 nm (unit: nm) to 45 nm, from 10 nm to 40 nm, from 15 nm to 35 nm, or from 20 nm to 30 nm, and the like. The thickness of the second sub-transition layer can range from 5 nm to 25 nm, from 10 nm to 22 nm, or from 15 nm to 20 nm, and the like.

[0013] In some possible implementation manners, the thickness of the first sub-transition layer can range from 5 nm (unit: nm) to 45 nm, from 10 nm to 40 nm, from 15 nm to 35 nm, or from 20 nm to 30 nm, and the like. The thickness of the second sub-transition layer can range from 5 nm to 25 nm, from 10 nm to 22 nm, or from 15 nm to 20 nm, and the like.

[0014] In some possible implementation manners, the material of the transition layer includes at least one of W, Cr, Ti, Si, Al, Nb, Ni, Mn, Mo and C. The sub-insulating layer includes an oxide layer, and the oxide layer and the transition layer are arranged adjacent to each other. Alternatively, the sub-insulating layer includes a nitride oxide layer, and the nitride oxide layer and the transition layer are arranged adjacent to each other. In this way, the transition layer can transition and connect the metal appearance and the insulating protective layer, improve the adhesion between the insulating protective layer and the metal appearance, and reduce the risk of the insulating protective layer falling off the metal appearance. In addition, the flexibility of the transition layer in material selection is improved.

[0015] In some possible implementation manners, the protection stack includes a transparent material. In this case, the refractive indexes of at least two adjacent sub-insulation layers in the insulation protection layer are different. In this way, the user can observe the color of the metal appearance layer through the protection stack, and the industrial design (ID) appearance requirement is met. In addition, the light reflected by the metal appearance part can be refracted by the sub-insulation layers with different refractive indexes, so that the protection stack can serve as an optical film layer. The color of the metal appearance part observed by the user can be adjusted by adjusting the refractive indexes of the different sub-insulation layers, and the appearance effect of the shell is improved.

[0016] In some possible implementation manners, the protection stack includes a wear-resistant protection layer, and the wear-resistant protection layer is located on the side of the insulation protection layer away from the metal appearance part and is stacked with the insulation protection layer. It can be understood that the protection stack includes the wear-resistant protection layer and the insulation protection layer, so that the protection stack can play a role in wear resistance and scratch resistance and insulation, and the protection effect of the protection stack on the metal appearance part is improved. The wear-resistant protection layer is located away from the metal appearance part relative to the insulation protection layer, so that the wear-resistant protection layer can protect the insulation protection layer and reduce the risk of damage to the insulation protection layer.

[0017] In some possible implementation manners, the thickness of the insulation protection layer is greater than the thickness of the wear-resistant protection layer. In this way, the thickness of the insulation protection layer can be relatively large, and the insulation effect of the insulation protection layer is ensured.

[0018] In some possible implementation manners, the thickness of the insulation protection layer is in a range from 300 nanometers to 3000 nanometers, and the thickness of the wear-resistant protection layer is in a range from 1 nanometer to 200 nanometers. It can be understood that the thickness of the insulation protection layer is in a range from 300 nanometers to 3000 nanometers, so that the thickness of the protection stack can be prevented from increasing due to the thickness of the insulation protection layer being too large (for example, greater than 3000 nanometers), and the insulation effect of the insulation protection layer can be ensured due to the thickness of the insulation protection layer being too small (for example, less than 300 nanometers). The thickness of the wear-resistant protection layer is in a range from 1 nanometer to 200 nanometers, so that the thickness of the protection stack can be prevented from increasing due to the thickness of the wear-resistant protection layer being too large (for example, greater than 200 nanometers), and the protection effect of the wear-resistant protection layer on the insulation protection layer and the metal appearance part can be ensured due to the thickness of the wear-resistant protection layer being too small (for example, less than 1 nanometer).

[0019] In some possible implementation manners, the thickness of the insulation protection layer can be in a range from 500 nanometers to 2500 nanometers, from 1000 nanometers to 2000 nanometers, or from 1200 nanometers to 1800 nanometers, and the thickness of the wear-resistant protection layer can be in a range from 10 nanometers to 180 nanometers, from 50 nanometers to 150 nanometers, or from 100 nanometers to 120 nanometers.

[0020] In some possible implementation manners, the thickness of the insulating protective layer can be 800 nm, 1500 nm, 2200 nm, or 2800 nm, etc. The thickness of the wear-resistant protective layer can be 5 nm, 30 nm, 80 nm, or 130 nm, etc.

[0021] In some possible implementation manners, the material of the wear-resistant protective layer includes at least one of SiN x , CN x , SiC x , SiN x C y , diamond-like or modified diamond-like. In this way, the wear-resistant protective layer can have greater hardness, play a role in wear and scratch resistance, reduce the risk of the protective stack being scratched, thereby playing a role in protecting the metal appearance part, improving the appearance effect of the electronic device, and improving the flexibility of the wear-resistant protective layer in material selection.

[0022] In some possible implementation manners, the protective stack includes a fingerprint-resistant layer, the fingerprint-resistant layer is located on the side of the insulating protective layer away from the metal appearance part and is arranged in a stack with the insulating protective layer. In this way, the risk of leaving fingerprints or other impurities on the surface of the metal appearance part when a user touches the shell can be reduced, the appearance effect of the electronic device can be improved, and the insulating protective layer can be protected.

[0023] In some possible implementation manners, the water drop angle of the surface of the side of the fingerprint-resistant layer away from the insulating protective layer is 110° to 120°. In this way, the fingerprint-resistant layer can have strong hydrophobicity and is not easy to be contaminated, and the appearance effect of the electronic device can be improved.

[0024] In some possible implementation manners, the metal appearance part includes a metal appearance part body and a metal appearance layer, and the metal appearance layer covers the surface of the metal appearance part body. The protective stack covers the metal appearance layer. It can be understood that, the metal appearance layer is arranged to cover the surface of the metal appearance part body, which can play a role in protecting the metal appearance part body and improve the surface smoothness of the metal appearance part, thereby improving the appearance effect of the metal appearance part. In addition, the metal appearance part can have different colors by changing the color of the metal appearance layer, which meets the appearance requirements of industrial design (ID) and improves the convenience of changing the color of the metal appearance part. The protective stack is arranged to cover the metal appearance layer of the metal appearance part, so that the protective stack can play a role in protecting the metal appearance part body and the metal appearance layer and reduce the risk of damage to the metal appearance part.

[0025] In some possible implementation manners, the surface impedance of the protection stack is greater than or equal to 100 MΩ. In this way, the insulation effect of the protection stack can be ensured, and the risk of galvanic cell reaction when the metal appearance part and other metal parts of different materials are in contact, thereby causing corrosion and damage of the metal appearance part and the other metal parts, can be reduced.

[0026] In some possible implementation manners, the thickness of the protection stack ranges from 300 nm to 5000 nm. In this way, the volume of the shell can be reduced when the thickness of the protection stack is too large (for example, greater than 5000 nm); and the protection effect of the protection stack on the metal appearance part can be ensured when the thickness of the protection stack is too small (for example, less than 500 nm).

[0027] In some possible implementation manners, the thickness of the protection stack can range from 5000 nm to 4500 nm, from 1000 nm to 4000 nm, or from 1500 nm to 3500 nm, and the like.

[0028] In some possible implementation manners, the thickness of the protection stack can be 800 nm, 1200 nm, 1800 nm, 2500 nm, 3000 nm, or 4000 nm, and the like.

[0029] In some possible implementation manners, the thickness of the protection stack can be 800 nm, 1200 nm, 1800 nm, 2500 nm, 3000 nm, or 4000 nm, and the like.

[0029] In some possible implementation manners, the thickness of the protection stack can be 800 nm, 1200 nm, 1800 nm, 2500 nm, 3000 nm, or 4000 nm, and the like.

[0030] In some possible implementation manners, the protection stack includes an insulating protection layer, and the insulating protection layer is located on the side of the wear-resistant protection layer close to the metal appearance part and is arranged in a stack with the wear-resistant protection layer. It can be understood that the protection stack includes the wear-resistant protection layer and the insulating protection layer, so that the protection stack can have the functions of wear resistance and scratch resistance and insulation, and the protection effect of the protection stack on the metal appearance part is improved. The insulating protection layer is arranged close to the metal appearance part relative to the wear-resistant protection layer, so that the wear-resistant protection layer can protect the insulating protection layer, and the risk of damage to the insulating protection layer is reduced.

[0031] In some possible implementation manners, the material of the wear-resistant protection layer includes at least one of SiN x , CN x , SiC x , SiN x C y , diamond-like or modified diamond-like. In this way, the wear-resistant protection layer can have a large hardness, can have the functions of wear resistance and scratch resistance, can reduce the risk of damage to the protection stack, can protect the metal appearance part, can improve the appearance effect of the electronic device, and can improve the flexibility of the wear-resistant protection layer in material selection.

[0032] In the embodiments of the present application, the protective stack covers the surface of the metal appearance part, so that the protective stack can protect the metal appearance part. In addition, the protective stack comprises the wear-resistant protective layer, which can improve the wear resistance of the protective stack, reduce the risk of scratching the protective stack, thereby protecting the metal appearance part and improving the appearance effect of the electronic device.

[0033] In some possible implementation manners, the insulating protective layer comprises a plurality of sub-insulating layers arranged in a stack. In this way, the thickness of the insulating protective layer can be increased, so as to ensure the insulating effect of the insulating protective layer, and the insulating protective layer can protect the metal appearance part and reduce the risk of scratching the metal appearance part, thereby improving the appearance effect of the electronic device. In addition, compared with arranging one insulating protective layer with a large thickness, arranging the insulating protective layer comprising a plurality of sub-insulating layers arranged in a stack can reduce the risk of surface rupture of the insulating protective layer.

[0034] In some possible implementation manners, the protective stack comprises a transition layer, which is arranged on the side of the insulating protective layer close to the metal appearance part and is arranged in a stack with the insulating protective layer. In this way, the transition layer can transitionally connect the metal appearance part and the insulating protective layer, improve the adhesion therebetween, and reduce the risk of the insulating protective layer falling off relative to the metal appearance part.

[0035] On the other hand, the embodiments of the present application provide a shell. The shell comprises a metal appearance part and a protective stack. The protective stack covers the surface of the metal appearance part. The protective stack comprises an insulating protective layer and a wear-resistant protective layer arranged in a stack. The wear-resistant protective layer is located on the side of the insulating protective layer away from the metal appearance part.

[0036] In the embodiments of the present application, the protective stack covers the surface of the metal appearance part, so that the protective stack can protect the metal appearance part. In addition, the protective stack comprises the wear-resistant protective layer and the insulating protective layer arranged in a stack, so that the protective stack can have the effects of wear resistance and insulation, and improve the protection effect of the protective stack on the metal appearance part. The wear-resistant protective layer is arranged away from the metal appearance part relative to the insulating protective layer, so that the wear-resistant protective layer can protect the insulating protective layer and reduce the risk of damage to the insulating protective layer.

[0037] On the other hand, the embodiments of the present application provide an electronic device. The electronic device comprises a processor and a shell as described above. The processor is located in the accommodation space enclosed by the shell.

[0038] The electronic device provided by the embodiments of the present application comprises the shell as described above, and therefore has all the beneficial effects described above, which will not be described herein again. BRIEF DESCRIPTION OF DRAWINGS

[0039] Figure 1 Structure diagram of an electronic device provided for some embodiments of the present application;

[0040] Figure 2 Structure diagram of an electronic device provided for some embodiments of the present application;

[0041] Figure 3 Structure diagram of an electronic device provided for some embodiments of the present application;

[0042] Figure 4 Structure diagram of a metal appearance part provided for some embodiments of the present application;

[0043] Figure 5 Structure diagram of a protective stack and a metal appearance part provided for some embodiments of the present application;

[0044] Figure 6 Structure diagram of a protective stack and a metal appearance part provided for some embodiments of the present application;

[0045] Figure 7 Structure diagram of a protective stack and a metal appearance part provided for some embodiments of the present application;

[0046] Figure 8 Structure diagram of a protective stack and a metal appearance part provided for some embodiments of the present application;

[0047] Figure 9 Structure diagram of a protective stack and a metal appearance part provided for some embodiments of the present application;

[0048] Figure 10 Structure diagram of a protective stack and a metal appearance part provided for some embodiments of the present application;

[0049] Figure 11 Structure diagram of a protective stack and a metal appearance part provided for some embodiments of the present application;

[0050] Figure 12 Structure diagram of a protective stack and a metal appearance part provided for some embodiments of the present application. DETAILED DESCRIPTION

[0051] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all of the embodiments of the present application. Based on the provided embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present application.

[0052] Unless otherwise required by context, as used herein the term "comprises" or "comprising" or the like is used on the basis and mutually consistent manner that the description along with the claims shall be interpreted in the broadest light consistent with the principles and purposes of the patent laws. The term "consisting essentially of will be construed, unless otherwise required by context, to permit the inclusion of additional elements that do not materially affect the essential characteristics of the composition or method. In this specification, the term "one embodiment" or "an embodiment" or "some embodiments" means that a particular feature, structure, material, or characteristic is included in at least one embodiment or implementation of the present application. The appearances of the phrase "in one embodiment" or "an embodiment" or "some embodiments" in various places in the specification are not necessarily all referring to the same embodiment or implementation, and the use of the terms in various places in the specification are not necessarily all referring to the same embodiment or implementation. The specific features, structures, materials, or characteristics can be included in any specific embodiment or implementation without limitation.

[0053] Hereinafter, the terms "first", "second", etc. are used only for the purpose of description and should not be construed as indicating or implying relative importance or implying the number of the technical features indicated. Thus, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, the meaning of "a plurality of" is two or more, unless otherwise specified.

[0054] As used herein, "perpendicular", "parallel" includes the stated case and the case similar to the stated case within an acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art considering the measurement being discussed and the error related to the measurement of a specific quantity (i.e., the limitation of the measurement system). For example, "perpendicular" includes absolute perpendicular and approximately perpendicular, wherein the acceptable deviation range of approximately perpendicular can be 5%.

[0055] Figure 1 Structural schematic diagram of an electronic device provided for some embodiments of the present application. Figure 2 Structural schematic diagram of an electronic device provided for some embodiments of the present application.

[0056] In some examples, as shown in Figure 1 and Figure 2 Some embodiments of the present application provide an electronic device 200, which can include a housing 100, and the housing 100 can include a metal appearance piece 110. Understandably, the metal appearance piece 110 can be exposed during use of the electronic device 200.

[0057] In some examples, as shown in Figure 1 and Figure 2As shown, the shell 100 can include a middle frame 101 and a back shell 102, the back shell 102 being located at one side of the middle frame 101 and connected with the middle frame 101. The back shell 102 and the middle frame 101 can enclose a containing space. The middle frame 101 can include a middle plate (not shown in the figure) and a frame 1011, the middle plate being a skeleton of the electronic device and playing a role of bearing and supporting. The frame 1011 encloses the middle plate and is connected with the middle plate. In some examples, the metal appearance piece 110 can be the frame 1011 of the shell 100.

[0058] Continuing to refer to Figure 1 and Figure 2 , the electronic device 200 can further include a display screen 201 and a camera assembly 202. The display screen 201 is located at a side of the middle frame 101 away from the back shell 102 and is connected with the middle frame 101. At least a part of the camera assembly 202 is embedded in a camera containing hole provided in the back shell 102, so as to avoid the back shell 102 from blocking the camera assembly 202.

[0059] For example, the electronic device 200 can further include a processor (not shown in the figure), which can be a central processing unit (CPU) or a graphics processing unit (GPU) and the like. The processor can be located in the containing space enclosed by the shell 100, that is, the processor can be located in the containing space enclosed by the middle frame 101 and the back shell 102. The display screen 201 and the camera assembly 202 and the like can be electrically connected with the processor.

[0060] Figure 3 A structural schematic diagram of an electronic device provided by another embodiment of the present application is shown.

[0061] In some examples, as Figure 3 shown, the electronic device 200 can be a folding electronic device, and the shell 100 can include a first shell 1001, a second shell 1002 and a rotating shaft 1003, the first shell 1001 and the second shell 1002 being rotatably connected through the rotating shaft 1003. The display screen 201 can be a flexible display screen and has a bendable characteristic. When the first shell 1001 and the second shell 1002 are in a relatively folded state, the display screen 201 can be bent, so that the electronic device 200 can be folded. At this time, the metal appearance piece 110 can also be a metal cover of the rotating shaft 1003.

[0062] It can be understood that the metal appearance piece 110 can also be other metal components of the electronic device 200 that can be exposed during use, and the embodiments of the present application do not further limit the specific form of the metal appearance piece 110.

[0063] Figure 4A structural schematic diagram of a metal appearance part provided for some embodiments of the present application.

[0064] In some examples, as shown in FIG. 1, the metal appearance part 110 can include a metal appearance part body 111 and a metal appearance layer 112 covering a surface of the metal appearance part body 111. Figure 4

[0065] For example, a material of the metal appearance part body 111 can include at least one of stainless steel, titanium alloy, zirconium alloy, and aluminum alloy. A material of the metal appearance layer 112 can include nitride or carbide of one or more components of Cr (chromium), Ti (titanium), Si (silicon), Al (aluminum), Nb (niobium), Ni (nickel), Mn (manganese), Mo (molybdenum), C (carbon), and W (tungsten). A thickness of the metal appearance layer 112 can be in a range of 100 nanometers (unit: nm) to 3000 nanometers.

[0066] For example, the thickness of the metal appearance layer 112 can be in a range of 300 nm to 2500 nm, 800 nm to 2000 nm, 1000 nm to 1500 nm, and the like. For example, the thickness of the metal appearance layer 112 can be 500 nm, 1200 nm, 1900 nm, 2500 nm, or the like. Embodiments of the present application do not make further limitation on the thickness of the metal appearance layer 112.

[0067] The metal appearance layer 112 covering the surface of the metal appearance part body 111 can protect the metal appearance part body 111 and improve the surface smoothness of the metal appearance part 110, thereby improving the appearance effect of the metal appearance part 110. In addition, the metal appearance part 110 can have different colors by changing the color of the metal appearance layer 112, thereby meeting the appearance requirements of industrial design (ID) and improving the convenience of changing the color of the metal appearance part 110.

[0068] For example, the metal appearance layer 112 can be formed on the surface of the metal appearance part body 111 by physical vapor deposition (PVD) so that the metal appearance layer 112 has good adhesion. Alternatively, the metal appearance layer 112 can be formed on the surface of the metal appearance part body 111 by chemical vapor deposition (CVD), evaporation, or electroplating, or other methods. Embodiments of the present application do not make further limitation on the process of forming the metal appearance layer 112.

[0069] ​In some examples, the metal appearance piece 110 can only include the metal appearance piece body 111 without the metal appearance layer 112. Embodiments of the present application take the metal appearance piece 110 including the metal appearance piece body 111 and the metal appearance layer 112 as an example for further illustration.

[0070] In some examples, the metal appearance piece 110 is generally a conductor with good electrical conductivity. When the metal appearance piece 110 contacts other metal components with different materials, such as the metal appearance piece 110 with stainless steel material contacting other metal components with aluminum alloy material, it is likely to cause a galvanic cell reaction, causing electrochemical corrosion of the metal appearance piece 110 and other metal components of the electronic device 200, resulting in damage to the shell 100 and affecting the appearance of the electronic device 200.

[0071] In addition, the metal appearance piece 110 generally has low hardness, and the film layer of the metal appearance layer 112 is loose. During use of the electronic device 200, the metal appearance piece 110 is easily scratched, affecting the appearance of the electronic device 200.

[0072] Figure 5 The structure of the protective layer and the metal appearance piece provided by some embodiments of the present application is shown in the following schematic view. Figure 6 The structure of the protective layer and the metal appearance piece provided by some embodiments of the present application is shown in the following schematic view.

[0073] Based on this, in embodiments of the present application, as shown in Figure 5 and Figure 6 The shell 100 further includes a protective layer 120 covering the surface of the metal appearance piece 110. In some examples, the protective layer 120 covers the metal appearance layer 112.

[0074] It can be understood that the protective layer 120 is arranged to cover the metal appearance layer 112 of the metal appearance piece 110, so that the protective layer 120 can protect the metal appearance piece body 111 and the metal appearance layer 112, reducing the risk of damage to the metal appearance piece 110.

[0075] Embodiments of the present application do not further limit the metal appearance piece 110, and the protective layer 120 is illustrated as follows.

[0076] In some examples, the thickness of the protective layer 120 is in the range of 300 nanometers to 5000 nanometers.

[0077] For example, the thickness of the protective stack 120 can range from 5000nm to 4500nm, 1000nm to 4000nm, or 1500nm to 3500nm, etc. For instance, the thickness of the protective stack 120 can be 800nm, 1200nm, 1800nm, 2500nm, etc.

[0078] 3000nm or 4000nm, etc. The embodiments of this application do not further limit the value of the thickness of the protective stack 120.

[0079] Setting the thickness of the protective layer 120 to a range of 300 nanometers to 5000 nanometers can prevent the thickness of the protective layer 120 from being too large (e.g., greater than 5000 nanometers) and thus increasing the volume of the housing 100; and can also prevent the thickness of the protective layer 120 from being too small (e.g., less than 300 nanometers), thus ensuring the protective effect of the protective layer 120 on the metal exterior component 110.

[0080] In some examples, such as Figure 5 and Figure 6 As shown, the protective layer 120 includes an insulating protective layer 121.

[0081] For example, the protective stack 120 may include only the insulating protective layer 121, or the protective stack 120 may include other film layers besides the insulating protective layer 121, with the insulating protective layer 121 and other film layers stacked together.

[0082] For example, the insulating protective layer 121 can be formed by PVD, or it can be formed by CVD, vapor deposition, or electroplating. The embodiments of this application do not further limit the process for forming the insulating protective layer 121.

[0083] The protective layer 120 includes an insulating protective layer 121, which enables the protective layer 120 to function as an insulator, reducing the risk of corrosion damage to the metal exterior part 110 and other metal parts that come into contact with each other and are made of different materials.

[0084] In some examples, the surface impedance of the protective stack 120 is greater than or equal to 100 MΩ (megaohms).

[0085] For example, the insulating film layer in the protective stack 120 may include only the insulating protective layer 121, or the insulating film layer in the protective stack 120 may include other film layers besides the insulating protective layer 121.

[0086] The surface impedance of the protection stack 120 is greater than or equal to 100 MΩ, which can ensure the insulation effect of the protection stack 120, and reduce the risk of galvanic cell reaction and corrosion damage of the metal appearance part 110 and other metal parts with different materials when the metal appearance part 110 and the other metal parts with different materials are in contact. It can be understood that the embodiments of the present application do not further limit the value of the surface impedance of the protection stack 120.

[0087] In some examples, as shown in Figure 5 and Figure 6 , the insulating protective layer 121 includes a plurality of sub-insulating layers 1211 arranged in a stack. The materials and thicknesses of the plurality of sub-insulating layers 1211 can be the same or different.

[0088] The insulating protective layer 121 includes a plurality of sub-insulating layers 1211 arranged in a stack, which can increase the thickness of the insulating protective layer 121, thereby ensuring the insulation effect of the insulating protective layer 121, and improving the protection effect of the insulating protective layer 121 on the metal appearance part 110, reducing the risk of scratching the metal appearance part 110, and improving the appearance effect of the electronic device 200.

[0089] In addition, compared with setting an insulating protective layer 121 with a large thickness, setting an insulating protective layer 121 including a plurality of sub-insulating layers 1211 arranged in a stack can reduce the risk of surface cracking of the insulating protective layer 121.

[0090] Figure 7 The structure schematic diagram of the protection stack and the metal appearance part provided by some embodiments of the present application. Figure 8 The structure schematic diagram of the protection stack and the metal appearance part provided by some embodiments of the present application.

[0091] In some examples, as shown in Figure 5 , Figure 6 , Figure 7 and Figure 8 , the plurality of sub-insulating layers 1211 includes at least two of an oxide layer 1211a, a nitride layer 1211b and a nitride oxide layer 1211c. The at least two of the oxide layer 1211a, the nitride layer 1211b and the nitride oxide layer 1211c are arranged in an alternating stack.

[0092] In some examples, as shown in Figure 5 , the plurality of sub-insulating layers 1211 can include an oxide layer 1211a and a nitride layer 1211b arranged in an alternating stack; or, as shown in Figure 6 , the plurality of sub-insulating layers 1211 can include an oxide layer 1211a and a nitride oxide layer 1211c arranged in an alternating stack; or, as shown in Figure 7As shown, the plurality of sub-insulating layers 1211 may include alternatingly stacked nitride layers 1211b and oxynitride layers 1211c; or, as... Figure 8 As shown, the plurality of sub-insulating layers 1211 may include an oxide layer 1211a, a nitride layer 1211b and an oxynitride layer 1211c that are stacked alternately.

[0093] The provision of multiple sub-insulating layers 1211, including at least two of oxide layer 1211a, nitride layer 1211b, and oxynitride layer 1211c, with at least two of oxide layer 1211a, nitride layer 1211b, and oxynitride layer 1211c being alternately stacked, can ensure the insulation effect of the insulating protective layer 121 and reduce the risk of galvanic reaction occurring when the metal appearance part 110 comes into contact with metal parts of different materials, thereby causing corrosion damage to the metal appearance part 110.

[0094] In some examples, the material of oxide layer 1211a includes Al2O3 (alumina), SiO2 (silicon oxide), and Si w Al z O y At least one of (alumina silicon). The material of the nitride layer 1211b includes Si3N4 (silicon nitride), AlN (aluminum nitride), and Si. w Al z N x At least one of (aluminum nitride silicon). The material of the oxide nitride layer 1211c includes Si. z O y N x (Silicon oxynitride), Al z O y N x (aluminum oxynitride), Si w Al z O y N x At least one of (aluminum oxynitride silicon).

[0095] Understandably, the subscripts of the elements in the above chemical formulas, such as x, y, z, w, represent the number of atoms of that element. For example, the chemical formula Si z O y N x In (silicon oxynitride), z represents the number of Si (silicon) atoms, y represents the number of O (oxygen) atoms, and x represents the number of N (nitrogen) atoms. The values ​​of x, y, z, and w can be the same or different in different chemical formulas. The embodiments of this application do not further limit the values ​​of x, y, z, and w.

[0096] For example, the values ​​of x, y, z, and w can be greater than or equal to 1 and less than or equal to 6. Furthermore, the values ​​of x, y, z, and w can be fractions. Let Si... z O y N x Taking silicon oxynitride as an example, the number of nitrogen atoms x can take the following values: 5 or The embodiments of this application do not further limit the values ​​of x, y, z, and w.

[0097] In some possible cases, the values ​​of x, y, z, and w can also be greater than 6.

[0098] The materials used for the oxide layer 1211a include Al2O3 (alumina), SiO2 (silicon oxide), and Si. w Al z O y At least one of (alumina silicon), wherein the material of the nitride layer 1211b includes Si3N4 (silicon nitride), AlN (aluminum nitride), Si w Al z N x At least one of aluminum nitride and silicon nitride, wherein the material of the oxide nitride layer 1211c includes Si. z O y N x (Silicon oxynitride), Al z O y N x (aluminum oxynitride), Si w Al z O y N x At least one of (aluminum oxynitride silicon) can improve the flexibility in material selection of oxide layer 1211a, nitride layer 1211b and oxynitride layer 1211c to meet different needs.

[0099] Understandably, the material of oxide layer 1211a may also include Al2O3 (alumina), SiO2 (silicon oxide), and Si w Al z O y Other oxides besides silicon alumina (Si), the material of the nitride layer 1211b can also include Si3N4 (silicon nitride), AlN (aluminum nitride), and Si. w Al z N x Other nitrides besides silicon aluminum nitride (Si), the material of the oxide nitride layer 1211c can also include materials other than Si. z O y N x (Silicon oxynitride), Al z Oy N x (aluminum oxynitride) and Si w Al z O y N x Other nitrogen oxides besides (aluminum oxynitride silicon).

[0100] In some examples, the protective layer 120 includes a transparent material.

[0101] For example, each film layer in the protective stack 120 (insulating protective layer 121 and other film layers besides insulating protective layer 121, such as transition layer 122, abrasion-resistant protective layer 123 and anti-fingerprint layer 124, etc.) may include transparent materials, so that users can observe the color of the metal appearance layer 112 through the protective stack 120, thus meeting the industrial design (ID) appearance requirements.

[0102] Among them, at least two adjacent sub-insulating layers 1211 in the insulating protective layer 121 have different refractive indices.

[0103] Understandably, the light reflected by the metal exterior component 110 can be refracted by sub-insulating layers 1211 with different refractive indices, enabling the protective stack 120 to function as an optical film. By adjusting the refractive indices of the different sub-insulating layers 1211, the color of the metal exterior component 110 as observed by the user can be adjusted, improving the appearance of the housing 100 and meeting industrial design (ID) aesthetic requirements.

[0104] Figure 9 This is a schematic diagram of the structure of the protective stack and metal exterior part provided in some embodiments of this application.

[0105] In some examples, such as Figure 9 As shown, the protective layer 120 includes a transition layer 122, which is located on the side of the insulating protective layer 121 close to the metal outer part 110 and is stacked with the insulating protective layer 121.

[0106] Understandably, the transition layer 122 can serve as a transitional connection to improve the adhesion between the metal exterior part 110 and the insulating protective layer 121 and reduce the risk of the insulating protective layer 121 falling off relative to the metal exterior part 110.

[0107] For example, the transition layer 122 can be formed by PVD, or it can be formed by CVD, vapor deposition, or electroplating. The embodiments of this application do not further limit the process for forming the transition layer 122.

[0108] In some examples, such as Figure 9As shown, the transition layer 122 includes a first sub-transition layer 122a and a second sub-transition layer 122b arranged in a stack, the first sub-transition layer 122a being closer to the metal appearance piece 110 than the second sub-transition layer 122b. The material of the first sub-transition layer 122a can include at least one of W (tungsten), Cr (chromium), Ti (titanium), Si (silicon), Al (aluminum), Nb (niobium), Ni (nickel), Mn (manganese), Mo (molybdenum), C (carbon). The material of the second sub-transition layer 122b can include at least one of SiO2 (silicon oxide), Al2O3 (aluminum oxide), Si z y x (oxynitride silicon), TiO2 (titanium oxide), Cr2O3 (chromium oxide), Nb y x z oxide), x represents the number of atoms of the N (nitrogen) element. The values of x, y, and z in different chemical formulas can be the same or different. Embodiments of the present application do not further limit the values of x, y, and z.

[0109] It can be understood that the subscripts of the elements in the above chemical formulas, such as x, y, and z, represent the number of atoms of the element. For example, in the chemical formula Si y x z , z represents the number of atoms of the Si (silicon) element, y represents the number of atoms of the O (oxygen) element, and x represents the number of atoms of the N (nitrogen) element. The values of x, y, and z in different chemical formulas can be the same or different. Embodiments of the present application do not further limit the values of x, y, and z.

[0110] For example, the values of x, y, and z can be greater than or equal to 1 and less than or equal to 6. In addition, the values of x, y, and z can be fractions.

[0111] For example, in the chemical formula Si y x , the value of the number of atoms x of the N element can be or Embodiments of the present application do not further limit the values of x, y, and z.

[0112] In some possible cases, the values of x, y, and z can also be greater than 6.

[0113] The material of the first sub-transition layer 122a includes at least one of W (tungsten), Cr (chromium), Ti (titanium), Si (silicon), Al (aluminum), Nb (niobium), Ni (nickel), Mn (manganese), Mo (molybdenum), C (carbon), and the material of the second sub-transition layer 122b includes SiO2 (silicon oxide), Al2O3 (aluminum oxide), Si z y x ​​​​​​​​​at least one of SiO2(silicon oxide), Al2O3(aluminum oxide), Si3N4(silicon nitride), TiO2(titanium oxide), Cr2O3(chromium oxide), Nb2O5(niobium oxide), and NiO2(nickel oxide), so that the first sub-transition layer 122a is capable of transitioning the metal appearance piece 110 and the second sub-transition layer 122b, and the second sub-transition layer 122b is capable of transitioning the first sub-transition layer 122a and the insulating protective layer 121, improving the adhesion between the insulating protective layer 121 and the metal appearance piece 110, and reducing the risk of the insulating protective layer 121 falling off the metal appearance piece 110. And improve the flexibility of the first sub-transition layer 122a and the second sub-transition layer 122b in material selection. y O x at least one of SiO2(silicon oxide), Al2O3(aluminum oxide), Si3N4(silicon nitride), TiO2(titanium oxide), Cr2O3(chromium oxide), Nb2O5(niobium oxide), and NiO2(nickel oxide), so that the first sub-transition layer 122a is capable of transitioning the metal appearance piece 110 and the second sub-transition layer 122b, and the second sub-transition layer 122b is capable of transitioning the first sub-transition layer 122a and the insulating protective layer 121, improving the adhesion between the insulating protective layer 121 and the metal appearance piece 110, and reducing the risk of the insulating protective layer 121 falling off the metal appearance piece 110. And improve the flexibility of the first sub-transition layer 122a and the second sub-transition layer 122b in material selection.

[0114] It can be understood that the first sub-transition layer 122a can also include other metals or non-metals other than W (tungsten), Cr (chromium), Ti (titanium), Si (silicon), Al (aluminum), Nb (niobium), Ni (nickel), Mn (manganese), Mo (molybdenum), C (carbon), and the second sub-transition layer 122b can also include other oxides or nitrides other than SiO2(silicon oxide), Al2O3(aluminum oxide), Si3N4(silicon nitride), TiO2(titanium oxide), Cr2O3(chromium oxide), Nb2O5(niobium oxide), and NiO2(nickel oxide). z O y N x at least one of SiO2(silicon oxide), Al2O3(aluminum oxide), Si3N4(silicon nitride), TiO2(titanium oxide), Cr2O3(chromium oxide), Nb2O5(niobium oxide), and NiO2(nickel oxide), so that the first sub-transition layer 122a is capable of transitioning the metal appearance piece 110 and the second sub-transition layer 122b, and the second sub-transition layer 122b is capable of transitioning the first sub-transition layer 122a and the insulating protective layer 121, improving the adhesion between the insulating protective layer 121 and the metal appearance piece 110, and reducing the risk of the insulating protective layer 121 falling off the metal appearance piece 110. And improve the flexibility of the first sub-transition layer 122a and the second sub-transition layer 122b in material selection. y O x at least one of SiO2(silicon oxide), Al2O3(aluminum oxide), Si3N4(silicon nitride), TiO2(titanium oxide), Cr2O3(chromium oxide), Nb2O5(niobium oxide), and NiO2(nickel oxide), so that the first sub-transition layer 122a is capable of transitioning the metal appearance piece 110 and the second sub-transition layer 122b, and the second sub-transition layer 122b is capable of transitioning the first sub-transition layer 122a and the insulating protective layer 121, improving the adhesion between the insulating protective layer 121 and the metal appearance piece 110, and reducing the risk of the insulating protective layer 121 falling off the metal appearance piece 110. And improve the flexibility of the first sub-transition layer 122a and the second sub-transition layer 122b in material selection.

[0115] In some examples, the thickness of the first sub-transition layer 122a ranges from 1 nanometer to 50 nanometers. The thickness of the second sub-transition layer 122b ranges from 3 nanometers to 30 nanometers.

[0116] For example, the thickness of the first sub-transition layer 122a can range from 5 nm to 45 nm, 10 nm to 40 nm, 15 nm to 35 nm, or 20 nm to 30 nm, etc. For example, the thickness of the first sub-transition layer 122a can be 8 nm, 12 nm, 23 nm, 38 nm, or 43 nm, etc. The thickness of the second sub-transition layer 122b can range from 5 nm to 25 nm, 10 nm to 22 nm, or 15 nm to 20 nm, etc. For example, the thickness of the second sub-transition layer 122b can be 8 nm, 13 nm, 18 nm, 22 nm, or 28 nm, etc.

[0117] The thickness of the first sub-transition layer 122a and the thickness of the second sub-transition layer 122b can be the same or different. The embodiments of the present application do not further limit the values of the first sub-transition layer 122a and the second sub-transition layer 122b.

[0118] Setting the thickness of the first sub-transition layer 122a to a range of 1 nanometer to 50 nanometers can prevent the thickness of the protective stack 120 from increasing due to excessive thickness (e.g., greater than 50 nanometers), and can also prevent the thickness of the first sub-transition layer 122a from being too small (e.g., less than 1 nanometer), which would affect the transition between the first sub-transition layer 122a and the second sub-transition layer 122b and the metal appearance component 110.

[0119] Setting the thickness of the second sub-transition layer 122b to a range of 3 nanometers to 30 nanometers can prevent the thickness of the protective stack 120 from increasing due to excessive thickness of the second sub-transition layer 122b (e.g., greater than 30 nanometers), and can also prevent the thickness of the second sub-transition layer 122a from being too small (e.g., less than 3 nanometers), which would affect the bonding effect of the second sub-transition layer 122b between the first sub-transition layer 122a and the insulating protective layer 121.

[0120] Figure 10 This is a schematic diagram of the structure of the protective stack and metal exterior part provided in some embodiments of this application.

[0121] In other examples, such as Figure 10 As shown, the transition layer 122 can also be a single-layer structure, that is, the transition layer 122 does not include the first sub-transition layer 122a and the second sub-transition layer 122b. In this case, the material of the transition layer 122 may include at least one of W (tungsten), Cr (chromium), Ti (titanium), Si (silicon), Al (aluminum), Nb (niobium), Ni (nickel), Mn (manganese), Mo (molybdenum), and C (carbon). The sub-insulating layer 1211 includes an oxide layer 1211a, which is disposed adjacent to the transition layer 122; or, the sub-insulating layer 1211 includes a oxynitride layer 1211c, which is disposed adjacent to the transition layer 122.

[0122] The transition layer 122 is made of at least one of W (tungsten), Cr (chromium), Ti (titanium), Si (silicon), Al (aluminum), Nb (niobium), Ni (nickel), Mn (manganese), Mo (molybdenum), and C (carbon). The transition layer 122 and the oxide layer 1211a or oxynitride layer 1211c in the insulating protective layer 121 are disposed adjacent to each other. This allows the transition layer 122 to seamlessly connect the metal outer component 110 and the insulating protective layer 121, improving the adhesion between them and reducing the risk of the insulating protective layer 121 detaching from the metal outer component 110. Furthermore, it increases the flexibility in material selection for the transition layer 122.

[0123] In some examples, the transition layer 122 can include a transparent material, so that the light reflected by the metal appearance piece 110 can pass through the transition layer 122 and be refracted by the sub-insulating layer 1211 with different refractive indexes.

[0124] Figure 11 A structural schematic diagram of a protective stack and a metal appearance piece is provided for yet another embodiment of the present application. Figure 12 A structural schematic diagram of a protective stack and a metal appearance piece is provided for yet another embodiment of the present application.

[0125] In some examples, as shown in Figure 11 and Figure 12 , the protective stack 120 includes a wear-resistant protective layer 123.

[0126] It can be understood that the wear-resistant protective layer 123 has a relatively large hardness. By providing the protective stack 120 including the wear-resistant protective layer 123, the wear-resistant performance of the protective stack 120 can be improved, and the risk of the protective stack 120 being scratched can be reduced, thereby playing a role in protecting the metal appearance piece 110 and improving the appearance effect of the electronic device 200.

[0127] In examples, the wear-resistant protective layer 123 can be formed in a PVD manner, or can also be formed in a CVD, evaporation or electroplating manner. Embodiments of the present application do not make further limitations on the process of forming the wear-resistant protective layer 123.

[0128] In some examples, the material of the wear-resistant protective layer 123 can include at least one of SiN x (silicon nitride), CN x (carbon nitride), SiC x (silicon carbide), SiN x C y (silicon carbonitride), diamond-like or modified diamond-like.

[0129] It can be understood that the subscripts of the elements in the above chemical formulae, such as x and y, represent the number of atoms of the element. For example, in the chemical formula SiN x (silicon nitride), x represents the number of atoms of the N (nitrogen) element. The values of x and y in different chemical formulae can be the same or different. Embodiments of the present application do not make further limitations on the values of x and y.

[0130] In examples, the values of x and y can be greater than or equal to 1 and less than or equal to 6. In addition, the values of x and y can be fractions. Taking SiN x (silicon nitride) as an example, the value of the number of atoms x of the nitrogen element can be or Embodiments of the present application do not make further limitations on the values of x, y and z.

[0131] In some possible cases, the values of x and y can also be greater than 6.

[0132] The material for setting the wear-resistant protective layer 123 includes at least one of SiN x (silicon nitride), CN x (carbon nitride), SiC x (silicon carbide), SiN x C y (carbon silicon nitride), diamond-like or modified diamond-like, so that the wear-resistant protective layer 123 can have a greater hardness, play a role in wear-resistant and scratch-resistant, reduce the risk of the protective stack 120 being scratched, thereby playing a role in protecting the metal appearance part 110, improving the appearance effect of the electronic device 200, and improving the flexibility of the wear-resistant protective layer 123 in material selection.

[0133] In some examples, as shown in FIG. 1A, the protective stack 120 can include only the wear-resistant protective layer 123, and not include the insulating protective layer 121. In other examples, as shown in FIG. 1B, the protective stack 120 can include only the insulating protective layer 121, and not include the wear-resistant protective layer 123. In yet other examples, as shown in FIG. 1C, the protective stack 120 can include both the wear-resistant protective layer 123 and the insulating protective layer 121. Embodiments of the present application take the example that the protective stack 120 includes the insulating protective layer 121 and the wear-resistant protective layer 123, and continue to illustrate by way of example. Figure 11 Figure 9 Figure 10 Figure 12

[0134] In some examples, as shown in FIG. 1A, the wear-resistant protective layer 123 is located on the side of the insulating protective layer 121 away from the metal appearance part 110, and is stacked with the insulating protective layer 121. That is, the insulating protective layer 121 is located on the side of the wear-resistant protective layer 123 close to the metal appearance part 110, and is stacked with the wear-resistant protective layer 123. Figure 12

[0135] It can be understood that the protective stack 120 is provided to include the wear-resistant protective layer 123 and the insulating protective layer 121, so that the protective stack 120 can play a role in wear-resistant and scratch-resistant and insulation, and improve the protection effect of the protective stack 120 on the metal appearance part 110.

[0136] The wear-resistant protective layer 123 is set away from the metal appearance part 110 relative to the insulating protective layer 121, so that the wear-resistant protective layer 123 can play a role in protecting the insulating protective layer 121, and reduce the risk of damage to the insulating protective layer 121.

[0137] ​​​​​For example, the protective stack 120 has a nanoindentation hardness greater than 14 GPa (unit: gigapascal). For example, when the pressure is greater than 14 GPa, the indentation depth is about 150 nm to 300 nm using a diamond indenter. For example, when the pressure is greater than 14 GPa, the indentation depth of the protective stack 120 can be 150 nm, 180 nm, 200 nm, 250 nm, or 280 nm, and the like. Embodiments of the present application do not further limit the value of the indentation depth.

[0138] In some examples, as shown in FIG. 1, the thickness of the insulating protective layer 121 is greater than the thickness of the wear-resistant protective layer 123. Figure 12

[0139] It can be understood that the thickness of the insulating protective layer 121 is the sum of the thicknesses of the plurality of sub-insulating layers 1211 arranged in a stack. The thickness of the insulating protective layer 121 is greater than the thickness of the wear-resistant protective layer 123, so that the thickness of the insulating protective layer 121 can be large, and the insulating effect of the insulating protective layer 121 is ensured.

[0140] In some examples, the thickness of the insulating protective layer 121 ranges from 300 nm to 3000 nm. The thickness of the wear-resistant protective layer 123 ranges from 1 nm to 200 nm.

[0141] For example, the thickness of the insulating protective layer 121 can range from 500 nm to 2500 nm, 1000 nm to 2000 nm, or 1200 nm to 1800 nm, and the like. For example, the thickness of the insulating protective layer 121 can be 800 nm, 1500 nm, 2200 nm, or 2800 nm, and the like. The thickness of the wear-resistant protective layer 123 can range from 10 nm to 180 nm, 50 nm to 150 nm, or 100 nm to 120 nm, and the like. For example, the thickness of the wear-resistant protective layer 123 can be 5 nm, 30 nm, 80 nm, or 130 nm, and the like. It can be understood that embodiments of the present application do not further limit the values of the thicknesses of the insulating protective layer 121 and the wear-resistant protective layer 123.

[0142] The thickness of the insulating protective layer 121 ranges from 300 nm to 3000 nm, which can avoid the thickness of the insulating protective layer 121 being too large (e.g., greater than 3000 nm) to increase the thickness of the protective stack 120, and can avoid the thickness of the insulating protective layer 121 being too small (e.g., less than 300 nm) to ensure the insulating effect of the insulating protective layer 121.

[0143] ​The thickness of the wear-resistant protective layer 123 is in a range from 1 nm to 200 nm, so that the wear-resistant protective layer 123 is not too thick (for example, greater than 200 nm) to increase the thickness of the protective stack 120, and the wear-resistant protective layer 123 is not too thin (for example, less than 1 nm) to ensure the protection effect of the wear-resistant protective layer 123 on the insulating protective layer 121 and the metal appearance part 110.

[0144] In some examples, the wear-resistant protective layer 123 includes a transparent material. In this way, the light refracted by the metal insulating protective layer 121 can pass through the wear-resistant protective layer 123.

[0145] In some examples, as shown in FIG. 1, the protective stack 120 includes an anti-fingerprint layer (AF) 124, which is located on a side of the insulating protective layer 121 away from the metal appearance part 110 and is stacked with the insulating protective layer 121. For example, the anti-fingerprint layer 124 is located on a side of the wear-resistant protective layer 123 away from the insulating protective layer 121. Figure 12

[0146] It can be understood that the anti-fingerprint layer 124 has hydrophobic, oil-repellent, anti-fouling and other properties, reduces the risk of leaving fingerprints or other impurities on the surface of the metal appearance part 110 when a user touches the shell 100, improves the appearance effect of the electronic device 200, and can also play a role in protecting the insulating protective layer 121.

[0147] For example, the anti-fingerprint layer 124 can be formed by evaporation, or other methods can also be used to form the anti-fingerprint layer 124. The embodiments of the present application do not make further limitations on the process of forming the anti-fingerprint layer 124.

[0148] In some examples, the anti-fingerprint layer 124 can include a transparent material, so that the light reflected by the metal appearance part 110 can pass through the anti-fingerprint layer 124.

[0149] In some examples, the water drop angle of the surface of the anti-fingerprint layer 124 away from the insulating protective layer 121 is in a range from 110° (unit: degree) to 120°. In this way, the anti-fingerprint layer 124 can have strong hydrophobicity and is not easy to be contaminated, thereby improving the appearance effect of the electronic device 200.

[0150] For example, the water drop angle of the surface of the anti-fingerprint layer 124 away from the insulating protective layer 121 can be 112°, 115° or 118°, etc. The embodiments of the present application do not make further limitations on the value of the water drop angle of the surface of the anti-fingerprint layer 124 away from the insulating protective layer 121.

[0151] ​For example, a steel wool, a rubber head, or other objects can be used to rub the protective stack 120. After the protective stack 120 is rubbed for about 2000 times, the water drop angle of the surface of the anti-fingerprint layer 124 away from the insulating protective layer 121 is greater than or equal to 90 degrees.

[0152] In some embodiments, as shown in FIG. 1, the metal appearance piece 110 can include a metal appearance body 111 and a metal appearance layer 112 covering the metal appearance body 111. The protective stack 120 is a transparent material, and the protective stack 120 covers the metal appearance layer 112. The protective stack 120 includes a transition layer 122, an insulating protective layer 121, a wear-resistant protective layer 123, and an anti-fingerprint layer 124 stacked in sequence away from the metal appearance layer 112. Figure 12

[0153] The transition layer 122 can include a first sub-transition layer 122a and a second sub-transition layer 122b stacked in sequence, and the first sub-transition layer 122a is closer to the metal appearance layer 112 than the second sub-transition layer 122b. The first sub-transition layer 122a serves to transitionally connect the metal appearance layer 112 and the second sub-transition layer 122b, and the second sub-transition layer 122b serves to transitionally connect the first sub-transition layer 122a and the insulating protective layer 121. In this way, the adhesion between the insulating protective layer 121 and the metal appearance layer 112 can be improved, and the risk of relative detachment between the two can be reduced.

[0154] The insulating protective layer 121 can include a plurality of sub-insulating layers 1211 stacked in sequence, and the plurality of sub-insulating layers 1211 include at least two of an oxide layer 1211a, a nitride layer 1211b, and a nitride oxide layer 1211c. The at least two of the oxide layer 1211a, the nitride layer 1211b, and the nitride oxide layer 1211c are alternately stacked. On the one hand, the insulating protective layer 121 can serve as an insulator, reducing the risk of galvanic reaction when the metal appearance piece 110 and other metal components of different materials come into contact, thereby reducing the risk of corrosion and damage of the metal appearance piece 110 and the other metal components.

[0155] On the other hand, the insulating protective layer 121 has a large thickness, which not only enhances the insulating effect but also serves as a scratch-resistant layer, improving the protection effect of the protective stack 120 on the metal appearance piece 110. In addition, compared to setting an insulating protective layer 121 with a large thickness, setting the insulating protective layer 121 to include a plurality of sub-insulating layers 1211 stacked in sequence can reduce the risk of surface cracking of the insulating protective layer 121.

[0156] ​On the basis that the protection stack 120 includes the insulating protection layer 121, the protection stack 120 is further provided to include the wear-resistant protection layer 123, so that the protection stack 120 can not only play an insulating role, but also play a wear-resistant and scratch-resistant role, thereby improving the protection effect of the protection stack 120 on the metal appearance part 110.

[0157] The anti-fingerprint layer 124 has strong hydrophobicity. The anti-fingerprint layer 124 is arranged on the side of the wear-resistant protection layer 123 away from the insulating protection layer 121, which can reduce the risk of leaving fingerprints or other impurities on the surface of the metal appearance part 110 when a user touches the shell 100, improve the appearance effect of the electronic device 200, and also play a role in protecting the insulating protection layer 121 and the wear-resistant protection layer 123.

[0158] In summary, the embodiments of the present application have at least the following beneficial effects:

[0159] In the embodiments of the present application, the protection stack 120 covers the surface of the metal appearance part 110, so that the protection stack 120 can play a protective role on the metal appearance part 110. In addition, the protection stack 120 is arranged to include the insulating protection layer 121, so that the protection stack 120 can play an insulating role, thereby reducing the risk of galvanic reaction when the metal appearance part 110 and other metal components with different materials are in contact, and thereby reducing the risk of corrosion and damage of the metal appearance part 110 and the other metal components.

[0160] The insulating protection layer 121 includes a plurality of sub-insulating layers 1211 arranged in layers, which can increase the thickness of the insulating protection layer 121, thereby ensuring the insulating effect of the insulating protection layer 121, and making the insulating protection layer 121 play a role in protecting the metal appearance part 110, thereby reducing the risk of scratching the metal appearance part 110 and improving the appearance effect of the electronic device 200. In addition, compared with arranging an insulating protection layer 121 with a large thickness, arranging the insulating protection layer 121 to include a plurality of sub-insulating layers 1211 arranged in layers can reduce the risk of surface rupture of the insulating protection layer 121.

[0161] On the basis that the protection stack 120 includes the insulating protection layer 121, the protection stack 120 can further include the wear-resistant protection layer 123, so that the protection stack 120 can not only play an insulating role, but also play a wear-resistant and scratch-resistant role, thereby improving the protection effect of the protection stack 120 on the metal appearance part 110.

Claims

1. A housing (100), characterized in that The application relates to a metal appearance piece (110) and a protective stack (120) covering the surface of the metal appearance piece (110). The protective stack (120) comprises an insulating protective layer (121), and the insulating protective layer (121) comprises a plurality of sub-insulating layers (1211) arranged in a stack, wherein the plurality of sub-insulating layers (1211) comprise at least two of an oxide layer (1211a), a nitride layer (1211b) and a nitride oxide layer (1211c), and the at least two of the oxide layer (1211a), the nitride layer (1211b) and the nitride oxide layer (1211c) are arranged in an alternating stack. The protective stack (120) comprises a transparent material, and the refractive indexes of at least two adjacent sub-insulating layers (1211) in the insulating protective layer (121) are different. The surface impedance of the protective stack (120) is greater than or equal to 100 M omega. The protective stack (120) comprises a transition layer (122) arranged in a stack with the insulating protective layer (121) and located on the side of the insulating protective layer (121) close to the metal appearance piece (110).

2. The housing (100) according to claim 1, characterized in that The material of the oxide layer (1211a) includes at least one of Al2O3, SiO2, Si w Al z O y The material of the nitride layer (1211b) includes at least one of Si3N4, AlN, Si w Al z N x The material of the oxynitride layer (1211c) includes at least one of Si z O y N x , Al z O y N x , Si w Al z O y N x .

3. The housing (100) according to claim 1 or 2, characterized in that The transition layer (122) comprises a first sub-transition layer (122a) and a second sub-transition layer (122b) arranged in a stack, and the first sub-transition layer (122a) is closer to the metal appearance piece (110) than the second sub-transition layer (122b).

4. The housing (100) according to claim 3, characterized in that The thickness of the first sub-transition layer (122a) ranges from 1 nm to 50 nm, and the thickness of the second sub-transition layer (122b) ranges from 3 nm to 30 nm. The material of the first sub-transition layer (122a) comprises at least one of W, Cr, Ti, Si, Al, Nb, Ni, Mn, Mo, C; the material of the second sub-transition layer (122b) comprises at least one of SiO2, Al2O3, Si z O y N x , TiO2, Cr2O3, Nb y O x .

5. The housing (100) according to claim 4, characterized in that The material of the transition layer (122) comprises at least one of W, Cr, Ti, Si, Al, Nb, Ni, Mn, Mo and C; the insulating protective layer (121) comprises an oxide layer (1211a), and the oxide layer (1211a) is arranged adjacent to the transition layer (122); or the insulating protective layer (121) comprises a nitride oxide layer (1211c), and the nitride oxide layer (1211c) is arranged adjacent to the transition layer (122).

6. The housing (100) according to claim 3, characterized in that The protective stack (120) comprises a wear-resistant protective layer (123) arranged in a stack with the insulating protective layer (121) and located on the side of the insulating protective layer (121) away from the metal appearance piece (110).

7. The housing (100) according to claim 1 or 2, characterized in that The thickness of the insulating protective layer (121) is greater than the thickness of the wear-resistant protective layer (123).

8. The housing (100) according to claim 7, characterized in that The thickness of the insulating protective layer (121) ranges from 300 nm to 3000 nm, and the thickness of the wear-resistant protective layer (123) ranges from 1 nm to 200 nm.

9. The housing (100) according to claim 8, characterized in that The protective stack (120) comprises a fingerprint-resistant layer (124) arranged in a stack with the insulating protective layer (121) and located on the side of the insulating protective layer (121) away from the metal appearance piece (110).

10. The housing (100) according to claim 7, characterized in that The material of the wear protection layer (123) comprises at least one of SiN x , CN x , SiC x , SiN x C y , diamond-like or modified diamond-like.

11. The housing (100) according to claim 1 or 2, characterized in that ​ 12. The housing (100) according to claim 11, characterized in that The water drop angle of the side surface of the anti-fingerprint layer (124) away from the insulating protective layer (121) is 110°-120°.

13. The housing (100) according to claim 1 or 2, characterized in that The metal appearance piece (110) comprises a metal appearance piece body (111) and a metal appearance layer (112), the metal appearance layer (112) covers the surface of the metal appearance piece body (111); the protective laminated layer (120) covers the metal appearance layer (112).

14. An electronic device (200), characterized by Comprising: The shell (100) according to any one of claims 1-13; A processor located in the accommodating space enclosed by the shell (100).

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