Large-size silicon-based gallium nitride epitaxial device and growth method

By setting up multiple buffer units and stress relief layers in silicon-based gallium nitride epitaxial devices, the problem that existing devices cannot grow thicker buffer layers is solved, and higher voltage resistance and crystallization quality are achieved, which is suitable for high-voltage applications.

CN119653841APending Publication Date: 2025-03-18FUZHOU GALLIUM VALLEY SEMICON CO LTD
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Patent Information

Application Number
CN202411834248.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-13
Publication Date
2025-03-18

AI Technical Summary

Technical Problem

The existing silicon-based gallium nitride epitaxial devices are unable to grow thicker buffer layers, which limit their development in the high voltage field.

Method used

The compressive stress and stress relief are prefabricated by stacking a plurality of buffering units and stress relief layers on the silicon substrate, including an AlN nucleation layer, an alternating AlN and AlGaN buffering layer, a low-temperature AlN layer, an AlGaN layer, a first and second GaN layers, a high-carbon doped GaN layer, etc., so as to grow a thicker buffer layer.

Benefits of technology

It achieves higher voltage resistance and higher quality crystallization, avoids the problem of wafer bending or cracking, and improves the flatness of the device, which is suitable for subsequent chip production.

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Abstract

The invention relates to the technical field of semiconductors, and discloses a large-size silicon-based gallium nitride epitaxial device and a growing method.The epitaxial device comprises a silicon substrate, an AlN nucleating layer, a buffer layer, a stress release layer, a high-carbon-doped GaN layer, a channel layer, a spacer layer, a barrier layer and a cap layer which are sequentially stacked from bottom to top; the buffer layer comprises a plurality of buffer units, and each buffer unit comprises an AlN buffer layer and an AlGaN buffer layer; the stress release layer comprises a low-temperature AlN layer, an AlGaN layer, a first GaN layer and a second GaN layer which are sequentially arranged from bottom to top; for an epitaxial device, overhigh stress generated by the overthick buffer layer can be relieved by arranging the stress release layer, so that a thicker buffer layer can be manufactured, and the voltage endurance capability of the device is higher; in addition, excessive defects and dislocation in the buffer layer can be eliminated in an interface through the stress release layer, and the crystallization quality of the device is improved; and finally, the stress release layer is grown by stacking materials with similar crystal lattices, so that a smoother device surface can be obtained, and subsequent chip manufacturing is facilitated.
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