Magnetic pulse neuron devices and their applications

Abstract

The present application discloses a magnetic pulse neuron device and its application. The device comprises: a magnetic tunnel junction for emitting a spike pulse electrical signal in response to a driving electrical signal. The magnetic tunnel junction comprises a capping layer, a magnetic free layer, a barrier layer, a pinning layer, and an antiferromagnetic layer stacked in sequence, with the magnetization direction of the magnetic free layer being in-plane oriented; a first electrode layer; a second electrode layer; and a high thermal resistance interface formed between the capping layer and the magnetic free layer. The high thermal resistance interface is configured to generate a thermally driven spin transfer torque and thermal noise under the action of the driving electrical signal. The magnetization direction of the magnetic free layer continuously flips under the action of the thermally driven spin transfer torque and the electrically driven spin transfer torque generated by the driving electrical signal. The magnetic pulse neuron device of the present application can generate a modulated spike pulse signal under the excitation of an external DC voltage or a pulse voltage, significantly saving area and reducing power consumption.

Description

Technical Field

[0001] The present application belongs to the technical field of pulse neuron devices, and specifically relates to a magnetic pulse neuron device and its application. Background Art

[0002] With the continuous improvement of artificial intelligence theory and advancement of technology, the computing power and energy efficiency of existing computing devices are gradually failing to meet the needs of the continued development of the field. Currently, mainstream chips are based on the von Neumann architecture, which separates memory and computation. This inherently limits their computing power and energy efficiency. The human brain, however, possesses a neural network composed of hundreds of billions of neurons and trillions of synapses, capable of performing various complex tasks while consuming only 24 watts of power. To this end, researchers have begun to mimic the workings of the brain and explore high-computing, energy-efficient, brain-inspired neuromorphic computing. Brain-inspired neuromorphic computing relies on neural network architectures, with artificial neural networks (ANNs) and spiking neural networks (SNNs) being the most discussed and researched. Compared to ANNs, which process continuous-valued information, SNNs communicate via discrete pulse trains in the temporal dimension, resulting in lower energy consumption and better processing of complex, sparse, and noisy spatiotemporal data.

[0003] The hardware systems relied upon by neural networks for neuromorphic computing primarily include artificial neurons and artificial synapses, with artificial neurons used to process input signals. Existing spin neuromorphic devices based on magnetic tunnel junctions can implement the functions of nonlinear activation functions such as ReLU and Sigmoid for neurons in ANNs from the hardware bottom layer, leveraging their spin diode effect, oscillator characteristics, and random flipping properties. However, they are not suitable for directly outputting pulse signals in SNNs. To implement the functions of neurons in SNNs, existing technologies combine neurons constructed using CMOS technology with capacitors, inductors, adders, comparators, and corresponding customized circuits to output pulse signals. This technology requires multiple devices to implement the functions of a single neuron, resulting in high computational complexity, power consumption, and area requirements, and cannot meet the requirements of the artificial intelligence field for reducing chip size and power consumption. Summary of the Invention

[0004] The purpose of this application is to provide a magnetic pulse neuron device and its application to solve the technical problem that the spin neuromorphic device based on magnetic tunnel junction in the prior art is not suitable for SNN, multiple devices are needed to realize the function of a pulse neuron, and it does not meet the requirements of the artificial intelligence field for reducing chip size and power consumption.

[0005] In order to achieve the above objectives, the present application provides a first aspect of a magnetic pulse neuron device, comprising:

[0006] A magnetic tunnel junction, configured to emit a spike pulse electrical signal in response to a driving electrical signal, wherein the magnetic tunnel junction comprises a cap layer, a magnetic free layer, a barrier layer, a pinned layer, and an antiferromagnetic layer stacked in sequence, wherein the magnetization direction of the magnetic free layer is in-plane oriented;

[0007] a first electrode layer, arranged on one side of the magnetic tunnel junction;

[0008] a second electrode layer, arranged on the other side of the magnetic tunnel junction, the second electrode layer being used to cooperate with the first electrode layer to input the driving electrical signal to the magnetic tunnel junction;

[0009] In which, a large thermal resistance interface is formed between the cap layer and the magnetic free layer, and the large thermal resistance interface is used to generate heat accumulation under the action of the driving electrical signal, so as to generate a thermally driven spin transfer torque and thermal noise through a thermal effect. The magnetization direction of the magnetic free layer is continuously flipped under the action of the thermally driven spin transfer torque and the electrically driven spin transfer torque generated by the driving electrical signal to generate a spike pulse electrical signal, and the spike pulse electrical signal has a certain randomness under the action of the thermal noise.

[0010] In one or more embodiments, the driving electrical signal is a DC voltage signal, and the voltage intensity of the driving electrical signal is less than or equal to 5V.

[0011] In one or more embodiments, the driving electrical signal is a pulse voltage signal, and the voltage intensity of the driving electrical signal is less than or equal to 5V, and the signal frequency is less than or equal to 1 GHz.

[0012] In one or more embodiments, the capping layer is made of one or more combinations of MgO, Pt, IrMn, and MgO / W / MgO, and the thickness of the capping layer is 0.01 to 10 nm.

[0013] In one or more embodiments, the material of the magnetic free layer is Co 20 Fe 60 B 20 , one or more combinations of NiFe, FeB, Py, Co, CoFe, FePt, and Co / Ni, and the thickness of the magnetic free layer is 0.1 to 20 nm.

[0014] In one or more embodiments, the barrier layer is made of one or more combinations of MgO, Al2O3, MgAl2O4, and TiO2, and the thickness of the barrier layer is 0.5 to 10 nm.

[0015] In one or more embodiments, the pinning layer is made of Co 40 Fe 40 B20 / Ru / Co 70 Fe 30 , one or more combinations of FeB, Py, Co, CoFe, FePt, and Co / Ni, and the thickness of the pinning layer is 0.1 to 20 nm.

[0016] In one or more embodiments, the material of the first electrode layer and the second electrode layer is Ta, Ru, Mo, Pt, Al, W, Cu, CuN, Au, Cr, Ti, Ni, Pb, TMDCs, SiC, MoO2, ITO, Ti3C2T x , or one or more combinations of graphene, wherein the thickness of the first electrode layer and the second electrode layer is 5 to 200 nm.

[0017] In one or more embodiments, a magnetic field generating device is further included, which is used to generate an external magnetic field based on an input control electrical signal to control the magnetization direction reversal of the magnetic free layer and assist in achieving the output of a spike pulse electrical signal.

[0018] In order to achieve the above-mentioned purpose, the second aspect of the present application provides an application of the magnetic pulse neuron device described in any of the above-mentioned embodiments as a pulse neuron in a pulse neural network.

[0019] Different from the prior art, the present invention has the following advantages:

[0020] The magnetic pulse neuron device of the present application can generate a modulated spike pulse signal under the stimulation of an external DC voltage or a pulse voltage. It does not need to be combined with other CMOS devices and can independently realize the function of neurons in a spiking neural network, significantly saving area and reducing power consumption.

[0021] The magnetic pulse neuron device of the present application has the characteristic of being able to respond to pulse voltage and can be used to construct a scalable spike neural network; it can also be integrated into a CMOS system to reduce the production cost of the neuromorphic chip constructed using this device. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments recorded in this application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0023] Figure 1 This is a schematic structural diagram of an embodiment of the magnetic pulse neuron device of the present application;

[0024] Figure 2 This is a schematic structural diagram of another embodiment of the magnetic pulse neuron device of the present application;

[0025] Figure 3 1 is a diagram of the output signal of the magnetic pulse neuron device of Example 1 of the present application under a linear voltage signal;

[0026] Figure 4 1 is an output signal diagram of the magnetic pulse neuron device of Example 2 of the present application under a pulse voltage signal;

[0027] Figure 5 It is the pulse time distribution of the spike pulse electrical signal output by the magnetic pulse neuron device of Example 3 of the present application under a DC voltage signal. DETAILED DESCRIPTION

[0028] In order to enable those skilled in the art to better understand the technical solutions in this application, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of this application.

[0029] Compared with artificial neural networks (ANNs), spiking neural networks (SNNs) communicate with each other through discrete pulse sequences in the time dimension, so they have lower energy consumption and are conducive to processing complex, sparse and noisy temporal information data.

[0030] Existing spin neuromorphic devices based on magnetic tunnel junctions (MTJs) leverage their spin diode effect, oscillator properties, and random flipping characteristics to implement nonlinear activation functions such as ReLU and Sigmoid functions in ANN neurons at the hardware level. The rich properties of MTJs make them promising for large-scale application as the fundamental building block of neuromorphic chips.

[0031] However, spin neuromorphic devices based on magnetic tunnel junctions cannot be used alone as spiking neurons in SNNs. The main reason is that their magnetic free layer cannot automatically and continuously flip the magnetization direction at a single voltage, resulting in the inability to output spike pulse electrical signals. Specifically, when using existing neurons to generate pulse signals, a positive voltage signal needs to be input to flip the magnetization direction of the magnetic free layer to one direction, and then a reverse voltage signal is input to reset the magnetization direction to complete a pulse process. Therefore, in order to achieve the magnetization direction flipping and reset process, the existing technology requires the use of CMOS technology to build neurons, capacitors, inductors, adders, comparators, and corresponding customized circuits to achieve the output of pulse signals. This technology requires the use of multiple devices to realize the function of a neuron, which has a large amount of computation, power consumption, and area, and cannot meet the requirements of the field of artificial intelligence for reducing chip size and power consumption. In particular, the pulse signals output by controlling the random flipping of the magnetization direction of the magnetic free layer in the existing technology are all square wave pulse signals, which represent the state of the free layer staying between two resistance states and cannot achieve the output of spike pulse signals.

[0032] In order to solve the above problems, the applicant has developed a magnetic pulse neuron device, which does not need to be combined with other CMOS devices and can independently realize the functions of neurons in a pulse neural network, significantly saving area and reducing power consumption.

[0033] Specifically, see Figure 1 , Figure 1 It is a structural schematic diagram of an embodiment of the magnetic pulse neuron device of the present application.

[0034] like Figure 1 As shown, the magnetic pulse neuron device includes a magnetic tunnel junction 10 , a first electrode layer 20 and a second electrode layer 30 .

[0035] The magnetic tunnel junction 10 is used to emit a spike pulse electrical signal in response to a driving electrical signal. The magnetic tunnel junction 10 includes a cap layer 101, a magnetic free layer 102, a barrier layer 103, a pinned layer 104 and an antiferromagnetic layer 105 stacked in sequence. The magnetization direction of the magnetic free layer 102 is in-plane oriented.

[0036] The first electrode layer 20 is arranged on one side of the magnetic tunnel junction 10 ; the second electrode layer 30 is arranged on the other side of the magnetic tunnel junction 10 . The second electrode layer 30 cooperates with the first electrode layer 20 to input a driving electrical signal to the magnetic tunnel junction 10 .

[0037] The interface between the capping layer 101 and the magnetic free layer 102 has a high thermal resistance, forming a high thermal resistance interface a. When a driving electrical signal is applied to the magnetic tunnel junction 10, heat accumulates at the high thermal resistance interface a. This heat accumulation leads to a thermal effect, which in turn generates a thermally driven spin-transfer torque in the magnetic free layer. Simultaneously, the driving electrical signal also generates an electrically driven spin-transfer torque in the magnetic free layer.

[0038] Under the action of thermally driven spin transfer torque and electrically driven spin transfer torque, the magnetization direction of the magnetized free layer will be continuously reversed, thereby generating a spike pulse electrical signal.

[0039] The working process of the magnetic pulse neuron device of the present application is described in detail below:

[0040] When a driving electrical signal is applied to the magnetic pulse neuron device in the initial state, the magnetic tunnel junction 10 is in a low-resistance state. Under the tunneling magnetoresistance effect, the current tunnels, and the large thermal resistance interface a gradually accumulates heat. The thermally driven spin transfer torque generated by the thermal effect gradually increases until the magnetization direction of the magnetized free layer is reversed under the action of the thermally driven spin transfer torque and the electrically driven spin transfer torque. The magnetic tunnel junction 10 switches to a high-resistance state, the tunneling current decreases rapidly, the heat dissipates rapidly, the effect of the thermally driven spin transfer torque is weakened, and the magnetization direction of the magnetized free layer is rapidly reversed, causing the magnetic tunnel junction 10 to return to a low-resistance state. This process is repeated, and the magnetization direction of the magnetized free layer is continuously reversed, thereby generating a spike pulse electrical signal.

[0041] Specifically, the magnetization dynamic behavior of the magnetization free layer of the present application can be expressed by the Landau-Lifshitz-Gilbert equation (LLG equation):

[0042]

[0043] Where m is the unit magnetization vector of the magnetization free layer, m = m / Ms, Ms is the saturation magnetization, m is the magnetization of the magnetization free layer, P is the direction of the spin polarization current, and h is eff is the effective field, which includes the external magnetic field, the anisotropic field in the free layer and the demagnetization field, h ther is the thermal field, τ STT is the spin torque, γ is the gyromagnetic ratio, and α is the Gilbert damping.

[0044] As can be seen from the above formula, the frequency and time interval of the peak pulse electrical signal generated by the magnetic tunnel junction 10 can be controlled by adjusting the intensity of the driving voltage.

[0045] In addition, the thermal effect not only generates the thermally driven spin transfer torque, but also provides thermal noise. The amplitude of the thermal noise can be expressed as follows:

[0046]

[0047] Where Ms is the saturation magnetization, γ is the gyromagnetic ratio, and k B is the Boltzmann constant, T is the temperature of the magnetic tunnel junction 10, V FL is the volume of the magnetic free layer 102 , and Δt is the time length.

[0048] Under the influence of thermal noise, the spike pulse electrical signal output by the magnetic pulse neuron device has a certain randomness, which can be expressed by a typical exponential function:

[0049] N counts =Aexp(-t / τ gap time )

[0050] Where N counts Indicates the number of spike pulses that occur within a time length t, where t is the test duration, τ gaptime It represents the expected value of the spike pulse time interval, and A is a constant.

[0051] Therefore, the appearance of spike pulse electrical signals follows the Poisson distribution. The number of pulses of the spike pulse electrical signals generated by the magnetic pulse neuron device within a certain time period can be predicted, but the intervals between peaks are random, which meets the randomness requirements of the spike neural network and helps to build a spike neural network.

[0052] It is contemplated that, in one embodiment, Figure 1 As shown, the driving electrical signal may be a DC voltage signal 50 , and the magnetic pulse neuron device may directly output a spike pulse electrical signal under the action of the DC voltage signal 50 .

[0053] Specifically, in one embodiment, the voltage strength of the DC voltage signal 50 may be less than or equal to 5 V. In other embodiments, the voltage strength of the DC voltage signal 50 may also be adjusted based on actual working conditions.

[0054] In another embodiment, the driving electrical signal may also be a pulse voltage signal 60 , which may also output a peak pulse electrical signal, and both may achieve the effect of this embodiment.

[0055] Specifically, in one embodiment, the voltage strength of the pulse voltage signal 60 can be less than or equal to 5V, and the signal frequency can be less than or equal to 1 GHz. In other embodiments, the voltage strength and signal frequency of the pulse voltage signal 60 can also be adjusted based on actual working conditions.

[0056] The materials of each layer of the magnetic pulse neuron device of the present application are described in detail below.

[0057] In one embodiment, the material of the capping layer 101 may be one or more combinations of MgO, Pt, IrMn, MgO / W / MgO, and the thickness of the capping layer 101 may be 0.01-10 nm.

[0058] In one embodiment, the material of the magnetic free layer 102 can be Co 20 Fe 60 B 20 , NiFe, FeB, Py, Co, CoFe, FePt, Co / Ni or one or more combinations thereof, the thickness of the magnetic free layer 102 can be 0.1 to 20 nm.

[0059] In one embodiment, the barrier layer 103 may be made of one or more of MgO, Al 2 O 3 , MgAl 2 O 4 , and TiO 2 , and the thickness of the barrier layer 103 may be 0.5-10 nm.

[0060] In one embodiment, the material of the pinning layer 104 can be Co 40 Fe 40 B 20 / Ru / Co 70 Fe 30 , FeB, Py, Co, CoFe, FePt, Co / Ni or one or more combinations thereof, the thickness of the pinning layer 104 can be 0.1 to 20 nm.

[0061] In one embodiment, the material of the first electrode layer 20 and the second electrode layer 30 can be Ta, Ru, Mo, Pt, Al, W, Cu, CuN, Au, Cr, Ti, Ni, Pb, TMDCs, SiC, MoO2, ITO, Ti3C2T x , graphene or one or more combinations thereof, the thickness of the first electrode layer 20 and the second electrode layer 30 can be 5 to 200 nm.

[0062] In one embodiment, the antiferromagnetic layer 105 may be made of IrMn, PtMn, FeMn, NiO, NiCoO, or a combination thereof, and may have a thickness of 0.1 nm to 20 nm.

[0063] In another embodiment, to assist in achieving the output of a spike pulse electrical signal, refer to Figure 2 , Figure 2 It is a structural schematic diagram of another embodiment of the magnetic pulse neuron device of the present application.

[0064] like Figure 2As shown, the magnetic pulse neuron device further includes a magnetic field generating device 40, which is used to generate an external magnetic field based on an input control electrical signal to control the magnetization direction reversal of the magnetic free layer 102 and assist in achieving the output of a spike pulse electrical signal.

[0065] It can be understood that the state of the magnetic tunnel junction 10 itself is related to its structure. The magnetic tunnel junction 10 needs to be adjusted to an initial state of low resistance in order to quickly achieve the output of a spike pulse electrical signal. For this reason, a magnetic field generating device 40 is also provided in this embodiment. The magnetic field generating device 40 quickly adjusts the magnetic tunnel junction 10 to the initial state by applying an external magnetic field, thereby accelerating the output of the spike pulse.

[0066] The magnetic pulse neuron devices of the above embodiments can generate modulated spike pulse signals under the stimulation of an external DC voltage or pulse voltage. They do not need to be combined with other CMOS devices and can independently realize the functions of neurons in a spiking neural network, significantly saving area and reducing power consumption.

[0067] In addition, due to its ability to respond to pulse voltage, the magnetic pulse neuron device of each of the above embodiments can also be used to build a physical neural network, perform on-chip learning and calculation, and thus build a scalable spike neural network; it can also be integrated into a CMOS system to reduce the production cost of the neuromorphic chip built using this device.

[0068] The effects of the technical solution of this application are further elaborated in detail below with reference to specific embodiments.

[0069] Example 1:

[0070] A magnetic pulse neuron device comprises a first electrode layer, a magnetic tunnel junction, a second electrode layer which are stacked, and a magnetic field generating device.

[0071] The first electrode layer is a Ta / Ru / Cu / Ta multilayer electrode with a thickness of 10 nm, and the second electrode layer is a Ta / Ru / Ta / CuN / Ta / CuN / Ta multilayer electrode with a thickness of 10 nm.

[0072] The magnetic tunnel junction includes a 5nm thick MgO cap layer, a 10nm thick Co 20 Fe 60 B 20 Magnetic free layer, 5nm thick MgO barrier layer, 5nm thick Co 40 Fe 40 B 20 / Ru / Co 70 Fe 30 Pinning layer, 10nm thick PtMn antiferromagnetic layer.

[0073] A -70mV DC voltage signal is applied to the magnetic pulse neuron device of Example 1, and the external magnetic field strength Hext generated by the magnetic field generating device is controlled to be -260Oe. The signal graph output by the device is recorded to obtain Figure 3 , Figure 3 This is a diagram of the output signal of the magnetic pulse neuron device of Example 1 of the present application under a linear voltage signal.

[0074] like Figure 3 As shown, the magnetic pulse neuron device of Example 1 directly outputs a spike pulse electrical signal under the drive of a DC voltage signal, and the intervals between the peaks are random in duration, meeting the requirements of the pulse neural network.

[0075] Example 2:

[0076] A magnetic pulse neuron device comprises a first electrode layer, a magnetic tunnel junction, a second electrode layer which are stacked, and a magnetic field generating device.

[0077] The first electrode layer is a Ta / Ru / Cu / Ta multilayer electrode with a thickness of 10 nm, and the second electrode layer is a Ta / Ru / Ta / CuN / Ta / CuN / Ta multilayer electrode with a thickness of 10 nm.

[0078] The magnetic tunnel junction includes a 10nm thick MgO cap layer, a 20nm thick Co 20 Fe 60 B 20 Magnetic free layer, 10nm thick MgO barrier layer, 10nm thick Co 40 Fe 40 B 20 / Ru / Co 70 Fe 30 Pinning layer, 10nm thick IrMn antiferromagnetic layer.

[0079] A pulse voltage signal of -100 mV and 200 kHz was applied to the magnetic pulse neuron device of Example 2, and the external magnetic field strength Hext generated by the magnetic field generating device was controlled to be -300 Oe. The signal graph output by the device was recorded to obtain Figure 4 , Figure 4 This is a diagram of the output signal of the magnetic pulse neuron device of Example 2 of the present application under a pulse voltage signal.

[0080] like Figure 4 As shown, the magnetic pulse neuron device of Example 2 directly outputs a spike pulse electrical signal under the drive of a pulse voltage signal, and the intervals between peak values ​​are random in duration, meeting the requirements of the pulse neural network.

[0081] Example 3:

[0082] A magnetic pulse neuron device comprises a first electrode layer, a magnetic tunnel junction, a second electrode layer which are stacked, and a magnetic field generating device.

[0083] The first electrode layer is a Ta / Ru / Cu / Ta multilayer electrode with a thickness of 10 nm, and the second electrode layer is a Ta / Ru / Ta / CuN / Ta / CuN / Ta multilayer electrode with a thickness of 10 nm.

[0084] The magnetic tunnel junction includes a 2nm thick MgO cap layer, a 2nm thick Co 20 Fe 60 B 20 Magnetic free layer, 5nm thick MgO barrier layer, 10nm thick Co 40 Fe 40 B 20 / Ru / Co 70 Fe 30 Pinning layer, 5nm thick IrMn antiferromagnetic layer.

[0085] A DC voltage signal of -130 mV is applied to the magnetic pulse neuron device of Example 3, and the external magnetic field strength Hext generated by the magnetic field generating device is controlled to be -270 Oe. gaptime = 30.2ns; record the number of pulse peaks of the magnetic pulse neuron device in a fixed period of time, and obtain Figure 5 , Figure 5 It is the pulse time distribution of the spike pulse electrical signal output by the magnetic pulse neuron device of Example 3 of the present application under a DC voltage signal.

[0086] like Figure 5 As shown in the figure, there is a regularity in the distribution of pulse intervals of spike pulse electrical signals.

[0087] It will be apparent to those skilled in the art that the present application is not limited to the details of the exemplary embodiments described above, and that the present application can be implemented in other specific forms without departing from the spirit or essential characteristics of the present application. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the present application is defined by the appended claims, not the foregoing description, and all variations within the meaning and range of equivalents of the claims are intended to be included therein. Any reference sign in a claim should not be construed as limiting the claim to which it relates.

[0088] In addition, it should be understood that although this specification is described in terms of implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.

Claims

1. A magnetic pulse neuron device, characterized in that: include: A magnetic tunnel junction, configured to emit a spike pulse electrical signal in response to a driving electrical signal, wherein the magnetic tunnel junction comprises a cap layer, a magnetic free layer, a barrier layer, a pinned layer, and an antiferromagnetic layer stacked in sequence, wherein the magnetization direction of the magnetic free layer is in-plane oriented; a first electrode layer, arranged on one side of the magnetic tunnel junction; a second electrode layer, arranged on the other side of the magnetic tunnel junction, the second electrode layer being used to cooperate with the first electrode layer to input the driving electrical signal to the magnetic tunnel junction; In which, a large thermal resistance interface is formed between the cap layer and the magnetic free layer, and the large thermal resistance interface is used to generate heat accumulation under the action of the driving electrical signal, so as to generate a thermally driven spin transfer torque and thermal noise through a thermal effect. The magnetization direction of the magnetic free layer is continuously flipped under the action of the thermally driven spin transfer torque and the electrically driven spin transfer torque generated by the driving electrical signal to generate a spike pulse electrical signal, and the spike pulse electrical signal has a certain randomness under the action of the thermal noise.

2. The magnetic pulse neuron device according to claim 1, characterized in that The driving electrical signal is a DC voltage signal, and the voltage intensity of the driving electrical signal is less than or equal to 5V.

3. The magnetic pulse neuron device according to claim 1, characterized in that The driving electrical signal is a pulse voltage signal, the voltage intensity of the driving electrical signal is less than or equal to 5V, and the signal frequency is less than or equal to 1GHz.

4. The magnetic pulse neuron device according to claim 1, characterized in that The material of the capping layer is one or more combinations of MgO, Pt, IrMn, MgO / W / MgO, and the thickness of the capping layer is 0.01-10 nm.

5. The magnetic pulse neuron device according to claim 1, characterized in that: The material of the magnetic free layer is Co 20 Fe 60 B 20 , one or more combinations of NiFe, FeB, Py, Co, CoFe, FePt, and Co / Ni, and the thickness of the magnetic free layer is 0.1 to 20 nm.

6. The magnetic pulse neuron device according to claim 1, characterized in that: The barrier layer is made of a material selected from the group consisting of MgO, Al2O3, MgAl2O4, and TiO2, and has a thickness of 0.5 to 10 nm.

7. The magnetic pulse neuron device according to claim 1, characterized in that: The material of the pinning layer is Co 40 Fe 40 B 20 / Ru / Co 70 Fe 30 , one or more combinations of FeB, Py, Co, CoFe, FePt, and Co / Ni, and the thickness of the pinning layer is 0.1 to 20 nm.

8. The magnetic pulse neuron device according to claim 1, characterized in that: The materials of the first electrode layer and the second electrode layer are Ta, Ru, Mo, Pt, Al, W, Cu, CuN, Au, Cr, Ti, Ni, Pb, TMDCs, SiC, MoO2, ITO, Ti3C2T x , or one or more combinations of graphene, wherein the thickness of the first electrode layer and the second electrode layer is 5 to 200 nm.

9. The magnetic pulse neuron device according to claim 1, characterized in that: It also includes a magnetic field generating device, which is used to generate an external magnetic field based on an input control electrical signal to control the magnetization direction reversal of the magnetic free layer and assist in achieving the output of a spike pulse electrical signal.

10. Use of the magnetic pulse neuron device according to any one of claims 1 to 9 as a pulse neuron in a pulse neural network.

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