Magnetic memory and electronic device

Abstract

The application discloses a magnetic memory, which comprises a magnetic spin valve, a coupling layer and a magnetic tunnel junction from top to bottom; the magnetic spin valve comprises a spin reference layer, a non-magnetic spacer layer and a spin free layer from top to bottom; the magnetic tunnel junction comprises a tunnel free layer, a barrier layer and a tunnel reference layer from top to bottom; the magnetic tunnel junction is magnetically coupled with the magnetic spin valve through the coupling layer. The magnetic spin valve of the application provides an additional spin transfer torque for the magnetic memory, greatly improves the STT efficiency, drives the magnetic memory to flip using a smaller current, and further significantly reduces the power consumption of the magnetic memory. In addition, the magnetic spin valve has a smaller influence on the tunnel magnetoresistance of the whole device, so that the device can still maintain a high tunnel magnetoresistance. The application also provides an electronic device with the above beneficial effects.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of electronic component manufacturing, in particular to a magnetic memory and an electronic device. BACKGROUND

[0002] STT-MRAM is a new type of memory, which has the characteristics of high speed, low power consumption and non-volatility. In STT-MRAM, the magnetic moment and resistance state of the magnetic tunnel junction (MTJ) can be controlled by the current flowing through it, achieving the purpose of data storage. In the application of STT-MRAM, it is generally desirable to have a lower power required for device operation.

[0003] From the operation mechanism of STT-MRAM, the strength of STT (spin transfer torque) effect will directly affect the working efficiency of the device, and low efficiency represents the need for large power, and high efficiency only needs small power to drive. The current commonly used method to improve STT efficiency is to use a reverse double magnetic tunnel junction structure, which improves the STT efficiency by superimposing two STT effects. This structure improves the STT efficiency while reducing the tunnel magnetoresistance of the magnetic tunnel junction, which has a great impact on the performance of the device.

[0004] Therefore, how to reduce the power consumption of the device while maintaining a high tunnel magnetoresistance is a problem to be solved by those skilled in the art. SUMMARY

[0005] The purpose of the present application is to provide a magnetic memory and an electronic device to solve the problem that high tunnel magnetoresistance and low power consumption cannot be achieved in the prior art.

[0006] To solve the above technical problems, the present application provides a magnetic memory, which comprises a magnetic spin valve, a coupling layer and a magnetic tunnel junction from top to bottom.

[0007] The magnetic spin valve comprises a spin reference layer, a non-magnetic spacer layer and a spin free layer from top to bottom.

[0008] The magnetic tunnel junction comprises a tunnel free layer, a barrier layer and a tunnel reference layer from top to bottom.

[0009] The magnetic tunnel junction is magnetically coupled to the magnetic spin valve through the coupling layer.

[0010] Optionally, in the magnetic memory, the coupling layer comprises a first coupling connection layer, a vertical reinforcement layer and a second coupling connection layer from top to bottom.

[0011] The vertical reinforcement layer is used to provide vertical anisotropy.

[0012] Optionally, in the magnetic memory, the spin reference layer and / or the spin free layer is a Heusler alloy layer.

[0013] Optionally, in the magnetic memory, the magnetic memory further comprises a top pinning layer and a third coupling layer.

[0014] The top pinning layer is magnetically coupled with the magnetic spin valve through the third coupling layer, for providing perpendicular anisotropy.

[0015] Optionally, in the magnetic memory, the magnetic memory further comprises a bottom pinning layer and a fourth coupling layer.

[0016] The bottom pinning layer is magnetically coupled with the magnetic tunnel junction through the fourth coupling layer, for providing perpendicular anisotropy.

[0017] Optionally, in the magnetic memory, the coupling layers of the magnetic memory are all antiferromagnetic coupling layers.

[0018] Optionally, in the magnetic memory, the coupling layers of the magnetic memory are at least one of a ruthenium metal layer, an iridium metal layer, a tantalum metal layer, a molybdenum metal layer or a tungsten metal layer.

[0019] Optionally, in the magnetic memory, the non-magnetic spacer layer is at least one of a silver metal layer, a gold metal layer, a copper metal layer, a chromium metal layer, a vanadium metal layer, a tungsten metal layer or a niobium metal layer.

[0020] Optionally, in the magnetic memory, the tunnel free layer and / or the tunnel reference layer is at least one of a cobalt alloy layer, an iron alloy layer or a nickel alloy layer.

[0021] An electronic device comprises the magnetic memory according to any one of the above.

[0022] The magnetic memory comprises a magnetic spin valve, a coupling layer and a magnetic tunnel junction from top to bottom; the magnetic spin valve comprises a spin reference layer, a non-magnetic spacer layer and a spin free layer from top to bottom; the magnetic tunnel junction comprises a tunnel free layer, a barrier layer and a tunnel reference layer from top to bottom; the magnetic tunnel junction is magnetically coupled with the magnetic spin valve through the coupling layer. The present application improves the combination structure of the prior art double magnetic tunnel junction into one magnetic spin valve plus one magnetic tunnel junction, the magnetic spin valve provides an additional spin transfer torque for the magnetic memory, greatly improves the STT efficiency, uses a smaller current to drive the magnetic memory to flip, and thus significantly reduces the power consumption of the magnetic memory. In addition, the magnetic spin valve has a smaller impact on the overall tunnel magnetoresistance of the device, so that the device can still maintain high tunnel magnetoresistance. The present application also provides an electronic device with the above beneficial effects. BRIEF DESCRIPTION OF DRAWINGS

[0023] In order to make the technical scheme of the present application or prior art clearer, the accompanying drawings needed in the description of the embodiments or prior art will be briefly introduced. Obviously, the accompanying drawings in the following description only aim to explain some embodiments of the present application, and all other drawings obtained by those skilled in the art without creative effort belong to the protection scope of the present application.

[0024] Figure 1 Structure diagram of one specific embodiment of the magnetic memory provided by the present application;

[0025] Figure 2 Structure diagram of another specific embodiment of the magnetic memory provided by the present application;

[0026] Figure 3 Structure diagram of still another specific embodiment of the magnetic memory provided by the present application;

[0027] Figure 4 Structure diagram of yet another specific embodiment of the magnetic memory provided by the present application;

[0028] Figure 5 Structure diagram of still another specific embodiment of the magnetic memory provided by the present application. DETAILED DESCRIPTION

[0029] In order to make the technical scheme of the present application or prior art clearer, the accompanying drawings needed in the description of the embodiments or prior art will be briefly introduced. Obviously, the accompanying drawings in the following description only aim to explain some embodiments of the present application, and all other drawings obtained by those skilled in the art without creative effort belong to the protection scope of the present application.

[0030] The core of the present application is to provide a magnetic memory, a structure diagram of one specific embodiment of which is shown in FIG. 1, which is referred to as embodiment one, and which comprises, from top to bottom, a magnetic spin valve, a coupling layer 20 and a magnetic tunnel junction. Figure 1

[0031] The magnetic spin valve comprises, from top to bottom, a spin reference layer 11, a non-magnetic spacer layer 12 and a spin free layer 13.

[0032] The magnetic tunnel junction comprises, from top to bottom, a tunnel free layer 33, a barrier layer 32 and a tunnel reference layer 31.

[0033] The magnetic tunnel junction is magnetically coupled with the magnetic spin valve through the coupling layer 20.

[0034] ​It should be noted that the coupling layer 20 can be a single coupling layer, or a composite layer, such as two coupling layers at both ends, and other structural layers sandwiched between the coupling layers.

[0035] As a specific embodiment, the coupling layer of the magnetic memory is at least one of a ruthenium metal layer, an iridium metal layer, a tantalum metal layer, a molybdenum metal layer, or a tungsten metal layer, and of course, can also be an alloy of the above-mentioned materials, or other suitable materials selected according to actual conditions.

[0036] In addition, the non-magnetic spacer layer 12 is at least one of a silver metal layer, a gold metal layer, a copper metal layer, a chromium metal layer, a vanadium metal layer, a tungsten metal layer, or a niobium metal layer; of course, can also be an alloy of the above-mentioned materials, or other suitable materials selected according to actual conditions.

[0037] In addition, the non-magnetic spacer layer 12 is at least one of a silver metal layer, a gold metal layer, a copper metal layer, a chromium metal layer, a vanadium metal layer, a tungsten metal layer, or a niobium metal layer; of course, can also be an alloy of the above-mentioned materials, or other suitable materials selected according to actual conditions.

[0038] The magnetic memory provided by the application comprises, from top to bottom, a magnetic spin valve, a coupling layer 20, and a magnetic tunnel junction; the magnetic spin valve comprises, from top to bottom, a spin reference layer 11, a non-magnetic spacer layer 12, and a spin free layer 13; the magnetic tunnel junction comprises, from top to bottom, a tunnel free layer 33, a barrier layer 32, and a tunnel reference layer 31; and the magnetic tunnel junction is magnetically coupled with the magnetic spin valve through the coupling layer 20. The application improves the combination structure of the double magnetic tunnel junction in the prior art to one magnetic spin valve plus one magnetic tunnel junction, and the magnetic spin valve provides an additional spin transfer torque for the magnetic memory, greatly improves the STT efficiency, uses a smaller current to drive the magnetic memory to flip, and thus significantly reduces the power consumption of the magnetic memory. In addition, the magnetic spin valve has a smaller influence on the overall tunnel magnetoresistance of the device, so that the device can still maintain a high tunnel magnetoresistance.

[0039] Based on the first specific embodiment, the magnetic memory is further improved to obtain the second specific embodiment, and a structural schematic diagram thereof is shown in Figure 2 The magnetic memory comprises, from top to bottom, a magnetic spin valve, a coupling layer 20, and a magnetic tunnel junction.

[0040] The magnetic spin valve comprises, from top to bottom, a spin reference layer 11, a non-magnetic spacer layer 12, and a spin free layer 13.

[0041] The magnetic tunnel junction comprises, from top to bottom, a tunnel free layer 33, a barrier layer 32, and a tunnel reference layer 31.

[0042] The magnetic tunnel junction is magnetically coupled with the magnetic spin valve through the coupling layer 20.

[0043] The coupling layer 20 comprises, from top to bottom, a first coupling connection layer 21, a vertical reinforcement layer 22 and a second coupling connection layer 23.

[0044] The vertical reinforcement layer 22 is used to provide vertical anisotropy.

[0045] In the embodiment, the vertical reinforcement layer 22 is arranged between the magnetic spin valve and the magnetic tunnel junction, and the vertical reinforcement layer 22 is a layer made of a strong vertical anisotropy material, which can effectively improve the vertical anisotropy of the whole device, so that the magnetic moment direction of the whole device is more inclined to be vertical, that is, when the magnetic field is reversed, the magnetic field component in the vertical direction is more, which is more conducive to improving the storage density.

[0046] Further, the spin reference layer 11 and / or the spin free layer 13 is a Heusler alloy layer, and it should be noted that the Heusler alloy can also be a related semi-metal; specifically, it can be at least one of a CoFeAlSi, CoFeAl, CoFeSi, CoCrFeSi, CoMnSi, CoFeMnSi, CoFeGeGa, NiMnSb material system. The Heusler alloy has a small damping coefficient, which helps to reduce the damping coefficient of the whole device, thereby further reducing the working current of the device and reducing the power consumption of the magnetic memory.

[0047] On the basis of the second embodiment, the magnetic memory is further improved to obtain the third embodiment, and a structural schematic diagram thereof is shown in Figures 3 to 5 The magnetic memory comprises, from top to bottom, a magnetic spin valve, a coupling layer 20 and a magnetic tunnel junction.

[0048] The magnetic spin valve comprises, from top to bottom, a spin reference layer 11, a non-magnetic spacer layer 12 and a spin free layer 13.

[0049] The magnetic tunnel junction comprises, from top to bottom, a tunnel free layer 33, a barrier layer 32 and a tunnel reference layer 31.

[0050] The magnetic tunnel junction is magnetically coupled with the magnetic spin valve through the coupling layer 20.

[0051] The coupling layer 20 comprises, from top to bottom, a first coupling connection layer 21, a vertical reinforcement layer 22 and a second coupling connection layer 23.

[0052] The vertical reinforcement layer 22 is used to provide vertical anisotropy.

[0053] The magnetic memory further comprises a top pinning layer 41 and a third coupling connection layer 42.

[0054] The top pinning layer 41 is magnetically coupled with the magnetic spin valve through the third coupling connection layer 42, for providing perpendicular anisotropy;

[0055] The magnetic memory further comprises a bottom pinning layer 51 and a fourth coupling connection layer 52;

[0056] The bottom pinning layer 51 is magnetically coupled with the magnetic tunnel junction through the fourth coupling connection layer 52, for providing perpendicular anisotropy.

[0057] In the embodiment, the top pinning layer 41 and the bottom pinning layer 51 are added to both ends of the magnetic memory, which can provide additional perpendicular anisotropy for the device, and further improve the precision and sensitivity of the device. It should be noted that although the top pinning layer 41 and the bottom pinning layer 51 are provided simultaneously in the embodiment, the top pinning layer 41 and the bottom pinning layer 51 can also be provided separately, and there is no necessary connection between the two settings.

[0058] In the embodiment, the top pinning layer 41 and the bottom pinning layer 51 adopt materials with high perpendicular anisotropy, which can improve the overall perpendicular anisotropy of the magnetic memory. Specifically, at least one of the FeNi, FePd, CoNi, FePt, and CoPt material systems can be used. Of course, the aforementioned vertical strengthening layer 22 can also use the above-mentioned material system.

[0059] As a preferred embodiment, the coupling connection layers of the magnetic memory are all antiferromagnetic coupling layers 20. The raw material cost of the antiferromagnetic coupling layer 20 is relatively low, and since all the coupling connection layers in the device are of the same nature, they can be made of the same material, simplifying the process flow and improving production efficiency.

[0060] In addition, the third coupling connection layer and the fourth coupling connection layer are both antiferromagnetic coupling layers, which can help the stray fields of the pinning layer and the reference layer to cancel each other out, reducing the influence on the magnetization flipping of the free layer.

[0061] Of course, if the coupling layer 20 is a single-layer coupling connection layer, in order to ensure that the spin transfer torque of the magnetic spin valve and the magnetic tunnel junction are superimposed on each other, when the coupling connection layer between the magnetic spin valve and the magnetic tunnel junction is an antiferromagnetic coupling layer 20, the magnetic spin valve and the magnetic tunnel junction are arranged in the same direction (i.e., the spin reference layer 11 and the tunnel reference layer 31 are in the same direction); when the coupling connection layer between the magnetic spin valve and the magnetic tunnel junction is a ferromagnetic coupling layer 20, the magnetic spin valve and the magnetic tunnel junction are arranged in opposite directions (i.e., the spin reference layer 11 and the tunnel reference layer 31 are in opposite directions).

[0062] In this specific embodiment, the coupling layer 20 includes two coupling connection layers, namely the first coupling connection layer 21 and the second coupling connection layer 23. To ensure that the spin-transfer torque of the magnetic spin valve and the magnetic tunnel junction can be superimposed, there are three cases (the direction of the layers is indicated by arrows in the figure):

[0063] The first type is as follows Figure 3 As shown, the first coupling connection layer 21 and the second coupling connection layer 23 are ferromagnetically coupled, and the third coupling connection layer 42 and the fourth coupling connection layer 52 are antiferromagnetically coupled; the magnetic spin valve is opposite in direction to the magnetic tunnel junction.

[0064] The second type is as follows Figure 4 As shown, the first coupling connection layer 21, the third coupling connection layer 42 and the fourth coupling connection layer 52 are antiferromagnetic coupled, and the second coupling connection layer 23 is ferromagnetic coupled; the magnetic spin valve and the magnetic tunnel junction are in the same direction.

[0065] The third type is as follows Figure 5 As shown, the first coupling connection layer 21, the second coupling connection layer 23, the third coupling connection layer 42 and the fourth coupling connection layer 52 are all antiferromagnetic coupled; the magnetic spin valve is opposite in direction to the magnetic tunnel junction.

[0066] An electronic device is provided, comprising a magnetic memory as described in any of the above-described embodiments. The magnetic memory provided by this invention comprises, from top to bottom, a magnetic spin valve, a coupling layer 20, and a magnetic tunnel junction; the magnetic spin valve comprises, from top to bottom, a spin reference layer 11, a non-magnetic spacer layer 12, and a spin-free layer 13; the magnetic tunnel junction comprises, from top to bottom, a tunnel-free layer 33, a barrier layer 32, and a tunnel reference layer 31; the magnetic tunnel junction is magnetically coupled to the magnetic spin valve through the coupling layer 20. This invention improves the existing dual magnetic tunnel junction combination structure to a single magnetic spin valve plus a single magnetic tunnel junction. The magnetic spin valve provides additional spin-transfer torque to the magnetic memory, significantly improving STT efficiency. A smaller current is required to drive the magnetic memory to flip, thereby significantly reducing the power consumption of the magnetic memory. Furthermore, the magnetic spin valve has a smaller impact on the overall tunnel magnetoresistance of the device, allowing the device to maintain high tunnel magnetoresistance.

[0067] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since it corresponds to the method disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to in the method section.

[0068] It should be noted that, in the specification, the terms such as first and second, etc. are merely used to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or device. Without more limitations, the element defined by the statement "including a" does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0069] The above describes the magnetic memory and electronic device provided by the present application in detail. The principles and implementation manners of the present application are described by applying specific examples in this paper, and the above description of the embodiments is only used to help understand the method of the present application and its core idea. It should be pointed out that, for ordinary skilled persons in the art, some improvements and modifications can be made to the present application without departing from the principles of the present application, and these improvements and modifications also fall within the protection scope of the claims of the present application.

Claims

1. A magnetic memory, comprising: The magnetic spin valve, the coupling layer and the magnetic tunnel junction are sequentially arranged from top to bottom. The magnetic spin valve sequentially comprises a spin reference layer, a non-magnetic spacer layer and a spin free layer from top to bottom. The magnetic tunnel junction sequentially comprises a tunnel free layer, a barrier layer and a tunnel reference layer from top to bottom. The magnetic tunnel junction is magnetically coupled with the magnetic spin valve through the coupling layer. The magnetic memory further comprises a top pinned layer and a third coupling connection layer. The top pinned layer is magnetically coupled with the magnetic spin valve through the third coupling connection layer, for providing a perpendicular anisotropy. The magnetic memory further comprises a bottom pinned layer and a fourth coupling connection layer. The bottom pinned layer is magnetically coupled with the magnetic tunnel junction through the fourth coupling connection layer, for providing a perpendicular anisotropy. The coupling connection layers of the magnetic memory are all anti-ferromagnetic coupling layers. The spin reference layer and / or the spin free layer is a Heusler alloy layer.

2. The magnetic memory of claim 1 wherein, The coupling layer sequentially comprises a first coupling connection layer, a perpendicular enhancement layer and a second coupling connection layer from top to bottom. The perpendicular enhancement layer is used for providing a perpendicular anisotropy.

3. The magnetic memory of claim 1 wherein, The coupling connection layers of the magnetic memory are at least one of a ruthenium metal layer, an iridium metal layer, a tantalum metal layer, a molybdenum metal layer or a tungsten metal layer.

4. The magnetic memory of claim 1 wherein, The non-magnetic spacer layer is at least one of a silver metal layer, a gold metal layer, a copper metal layer, a chromium metal layer, a vanadium metal layer, a tungsten metal layer or a niobium metal layer.

5. The magnetic memory of claim 1 wherein, The tunnel free layer and / or the tunnel reference layer is at least one of a cobalt alloy layer, an iron alloy layer or a nickel alloy layer.

6. An electronic device, comprising: The electronic device comprises the magnetic memory according to any one of claims 1 to 5.

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