Photoelectric device, preparation method thereof and display device

Abstract

The invention discloses a photoelectric device and a preparation method thereof and a display device, the photoelectric device comprises a first electrode, a first carrier function layer and a second electrode which are sequentially stacked, the material in the first carrier function layer comprises first inorganic semiconductor particles, and the material in the second carrier function layer comprises second inorganic semiconductor particles. The surfaces of the first inorganic semiconductor particles are coated with first adsorption layers, and the first adsorption layers comprise tritium ions; and / or the photoelectric device further comprises a first metal tritium layer, and the first metal tritium layer is combined on the surface, close to the first carrier functional layer, of the first electrode; and / or the photoelectric device further comprises a second metal tritium layer, and the second metal tritium layer is combined on the surface, far away from the first carrier functional layer, of the second electrode. The photoelectric device disclosed by the invention is relatively long in service life.

Description

Technical Field

[0001] The present application relates to the technical field of optoelectronic devices, and in particular to an optoelectronic device and a method for preparing the same, and a display device. Background Art

[0002] Currently, the widely used optoelectronic devices are organic light-emitting devices (OLED) and quantum dot light-emitting devices (QLED). OLED has become the mainstream technology in the field of display technology due to its excellent display performance such as self-luminescence, simple structure, ultra-thinness, fast response speed, wide viewing angle, low power consumption, and flexible display. QLED has the advantages of saturated color of emitted light, adjustable wavelength, low start-up voltage, good solution processability, easy fine control of quantum dots, and high quantum yield of photoluminescence and electroluminescence. In recent years, it has become a strong competitor of OLED.

[0003] The structure of traditional OLED and QLED devices generally includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode. Under the action of the electric field, the holes generated by the anode of the optoelectronic device and the electrons generated by the cathode move and are injected into the hole transport layer and the electron transport layer respectively, and finally migrate to the light-emitting layer. When the two meet in the light-emitting layer, energy excitons are generated, thereby exciting the light-emitting molecules and finally producing visible light.

[0004] The lifespan of existing optoelectronic devices is relatively short and needs to be further improved. Summary of the invention

[0005] In view of this, the present application provides a photoelectric device, aiming to improve the problem of short life of existing photoelectric devices.

[0006] The embodiment of the present application is implemented as follows: a photoelectric device includes a first electrode, a first carrier functional layer, and a second electrode which are stacked, wherein:

[0007] The material of the first carrier functional layer includes first inorganic semiconductor particles, the surface of the first inorganic semiconductor particles is coated with a first adsorption layer, and the first adsorption layer includes tritium ions; and / or

[0008] The optoelectronic device further comprises a first metal tritide layer, wherein the first metal tritide layer is bonded to a surface of the first electrode close to the first carrier functional layer; and / or

[0009] The optoelectronic device further includes a second metal tritide layer bonded to a surface of the second electrode remote from the first carrier functional layer.

[0010] Accordingly, the present invention also provides a method for preparing a photoelectric device, comprising the following steps:

[0011] providing a first electrode;

[0012] Providing first inorganic semiconductor particles, and disposing the first inorganic semiconductor particles on the first electrode to obtain a first carrier functional layer;

[0013] Preparing a second electrode on the first carrier functional layer to obtain a photoelectric device;

[0014] The preparation method further includes: performing a first tritium ion beam treatment on at least one of the first electrode, the first carrier functional layer, and the second electrode.

[0015] Correspondingly, an embodiment of the present application further provides a display device, which includes the above-mentioned optoelectronic device.

[0016] The first carrier functional layer of the optoelectronic device described in the present application includes a first inorganic semiconductor particle and a first adsorption layer coated on the surface of the first inorganic semiconductor particle. The first adsorption layer includes tritium ions. In this way, the tritium ions are adsorbed on the surface of the first inorganic semiconductor particle to form an implantation of tritium ions. The tritium ions can replace the non-metallic ions (such as oxygen ions) in the first inorganic semiconductor particle, thereby regulating the band gap of the first inorganic semiconductor particle, thereby improving the optical properties of the first inorganic semiconductor particle, and thereby improving the life of the optoelectronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.

[0018] Figure 1 is a flow chart of a method for preparing a photoelectric device provided in an embodiment of the present application;

[0019] Figure 2 is a schematic structural diagram of an optoelectronic device provided in an embodiment of the present application;

[0020] Figure 3 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0021] Figure 4 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0022] Figure 5 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0023] Figure 6is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0024] Figure 7 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0025] Figure 8 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0026] Fig. 9 is a schematic structural diagram of another optoelectronic device provided in an embodiment of the present application;

[0027] Fig.10 This is a distribution diagram of the Zn element in the electron transport layer treated with tritium ions by a spherical aberration electron microscope in Example 1 of the present application;

[0028] Fig.11 This is a distribution diagram of tritium element in the electron transport layer after tritium ion treatment in Example 1 of the present application using a spherical aberration electron microscope.

[0029] Reference numerals:

[0030] Optoelectronic device 100 ; first electrode 10 ; first metal tritium layer 11 ; first carrier functional layer 20 ; second electrode 30 ; second metal tritium layer 31 ; light emitting layer 40 ; second carrier functional layer 50 . DETAILED DESCRIPTION

[0031] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0032] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. In addition, in the description of this application, the term "including" means "including but not limited to". The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0033] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0034] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0035] In the present application, when a layer is formed "on" another layer, the so-called "on" is a broad concept, which may indicate that the formed another layer is adjacent to the certain layer, or may indicate that there are other spacing structural layers between the another layer and the certain layer. For example, when a second electrode is formed "on" the first carrier functional layer, the so-called "on" may indicate that the formed second electrode is adjacent to the first carrier functional layer, or may indicate that there are other spacing structural layers between the second electrode and the first carrier functional layer, such as a light-emitting layer.

[0036] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0037] Annealing is often required during the film preparation process of optoelectronic devices to improve the device's luminescence performance, oxidation resistance, thermal stability and other properties. The commonly used annealing method is thermal annealing (i.e., high temperature annealing). However, the high temperature caused by thermal annealing will have a negative impact on the device. For example, on the one hand, it will cause the organic layer to decompose, degrade or change its structure. On the other hand, annealing may cause an increase in defects near the organic / inorganic interface and structural damage. On the other hand, thermal annealing will also affect the performance of quantum dots and electrodes. Therefore, an annealing process that does not involve high temperatures is needed.

[0038] The technical solution of this application is as follows:

[0039] First, see Figure 1 and Figures 2 to 9The present invention provides a method for preparing a photoelectric device, comprising the following steps:

[0040] Step S11, providing a first electrode 10;

[0041] Step S12, providing first inorganic semiconductor particles, and disposing the first inorganic semiconductor particles on the first electrode 10 to obtain a first carrier functional layer 20;

[0042] Step S13 , preparing a second electrode 30 on the first carrier functional layer 20 to obtain a photoelectric device 100 .

[0043] The preparation method further includes performing a first tritium ion beam treatment on at least one of the first electrode 10 , the first carrier functional layer 20 , and the second electrode 30 for annealing.

[0044] See also Figures 2-3 When the first carrier functional layer 20 is subjected to the first tritium ion beam treatment, the tritium ions can be adsorbed on the surface of the first inorganic semiconductor particles to form a first adsorption layer, forming the implantation of tritium ions. On the one hand, the tritium ions can replace the non-metallic ions (such as oxygen ions) in the first inorganic semiconductor particles, thereby regulating the band gap of the first inorganic semiconductor particles, thereby improving the optical properties of the first inorganic semiconductor particles, and thereby improving the brightness, lifespan and current efficiency of the optoelectronic device; on the other hand, the implantation of tritium ions can adjust the lattice structure of the surface of the first inorganic semiconductor particles, reduce the surface defect density, thereby improving the first inorganic semiconductor particles. Thermal stability and carrier transfer efficiency, thereby improving the life of optoelectronic devices; on the other hand, the implantation of tritium ions can introduce tritium ions to form shallow donors or acceptors. For example, for n-type semiconductors (electronic functional materials), if tritium ions replace elements in the lattice of the first inorganic semiconductor particles, it will lead to a decrease in valence electrons, and the tritium ions will become shallow donors. For p-type semiconductors (hole functional materials), if tritium ions replace elements in the lattice of the first inorganic semiconductor particles, it will lead to an increase in valence electrons, and the tritium ions will become acceptors, thereby improving the electrical conductivity of the first inorganic semiconductor particles and related electrical properties such as carrier transfer efficiency.

[0045] See also Figures 4-5 and Figures 8-9 When the first electrode 10 is subjected to the first tritium ion beam treatment, the material of the first electrode 10 is selected from a metal single substance electrode or an alloy electrode, so that a first metal tritium layer 11 can be formed on the first electrode 10 .

[0046] See also Figures 6-7 and Figures 8-9When the second electrode 30 is subjected to the first tritium ion beam treatment, the material of the second electrode 30 is selected from a metal single substance electrode or an alloy electrode, so that a second metal tritium layer 31 can be formed on the second electrode 30 .

[0047] The metal tritide in the first metal tritide layer 11 and the second metal tritide layer 31 can regulate the spatial structure, electronic energy level and chemical bond of the electrode surface, thereby improving the chemical properties and environmental stability of the electrode, such as improving the electrode's antioxidant capacity and chlorination resistance, etc. The metal tritide can also serve as an oxidation barrier to reduce the natural oxidation rate of the electrode.

[0048] In addition, through the first tritium ion beam treatment, tritium atoms can interpenetrate with the metal atoms in the electrode, thereby improving the microstructure of the electrode, such as grain size, lattice constant, etc., and then improving the orderliness of the atomic arrangement in the electrode, thereby improving the electrical conductivity and optical properties of the electrode.

[0049] Furthermore, the first tritium ion beam treatment can also improve the direct adhesion between the electrode and the underlying material (such as substrate material, light-emitting layer material or carrier functional layer material), and improve the electrode's antioxidant and corrosion resistance, thereby making the electrode have stronger adhesion and stronger protection against external media.

[0050] In some embodiments, the material of the first metal tritide layer 11 may include, but is not limited to, one or more of tritiated silver, tritiated aluminum, tritiated copper, tritiated cobalt, tritiated chromium, tritiated iron, tritiated nickel, tritiated manganese, tritiated titanium, tritiated vanadium, tritiated platinum, tritiated gold, tritiated iridium, tritiated molybdenum, tritiated calcium, tritiated magnesium, and tritiated barium.

[0051] In some embodiments, the thickness of the first metal tritium layer 11 is 3-5 nm, for example, 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm, etc. Within the thickness range, the spatial structure, electronic energy level and chemical bond of the electrode surface can be regulated, thereby effectively improving the corrosion resistance, oxidation resistance, environmental stability, conductivity, optical properties and adhesion of the first electrode 10.

[0052] In some embodiments, the material of the second metal tritide layer 31 independently includes one or more of tritiated silver, tritiated aluminum, tritiated copper, tritiated cobalt, tritiated chromium, tritiated iron, tritiated nickel, tritiated manganese, tritiated titanium, tritiated vanadium, tritiated platinum, tritiated gold, tritiated iridium, tritiated molybdenum, tritiated calcium, tritiated magnesium, and tritiated barium.

[0053] In some embodiments, the thickness of the second metal tritium layer 31 is independently 3 to 5 nm, for example, 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm, etc. Within the thickness range, the spatial structure, electronic energy level and chemical bond of the electrode surface can be regulated, thereby effectively improving the corrosion resistance, oxidation resistance, environmental stability, conductivity, optical properties and adhesion of the second electrode 30.

[0054] The first carrier functional layer 20 may be a first electron functional layer or a first hole functional layer. It is understood that the first electron functional layer may be a first electron transport layer or a first electron injection layer, and the first hole functional layer may be a first hole transport layer or a first hole injection layer.

[0055] In some embodiments, the first carrier functional layer 20 is a first electronic functional layer, and the first inorganic semiconductor particles are inorganic particles known to be used in electronic functional layers of optoelectronic devices, for example, may include but are not limited to first doped metal oxide particles, first undoped metal oxide particles, one or more of IIB-VIA semiconductor materials, IIIA-VA semiconductor materials and IB-IIIA-VIA semiconductor materials, the material of the first undoped metal oxide particles includes but is not limited to one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and the metal oxide in the first doped metal oxide particles includes But it is not limited to one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, Al2O3; the doping elements in the first doped metal oxide particles include but are not limited to one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga; the IIB-VIA group semiconductor materials include but are not limited to one or more of ZnS, ZnSe, CdS; the IIIA-VA group semiconductor materials include but are not limited to one or more of InP and GaP; the IB-IIIA-VIA group semiconductor materials include but are not limited to one or more of CuInS and CuGaS.

[0056] In other embodiments, the first carrier functional layer 20 is a first hole functional layer, and the first inorganic semiconductor particles are inorganic particles known to be used in the hole functional layer of optoelectronic devices, for example, they may include but are not limited to one or more of second doped metal oxide particles, second non-doped metal oxide particles, metal sulfides, metal selenides and metal nitrides. The metal oxide in the second doped metal oxide particles and the metal oxide in the second non-doped metal oxide particles independently include but are not limited to one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping elements in the second doped metal oxide particles include but are not limited to one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfides include but are not limited to one or more of CuS, MoS3, WS3, the metal selenides include but are not limited to one or more of MoSe3, WSe3, and the metal nitrides include but are not limited to P-type gallium nitride.

[0057] When the first inorganic semiconductor particles contain oxygen, that is, when the first inorganic semiconductor particles are doped or undoped metal oxide particles, such as the first doped metal oxide particles, the first undoped metal oxide particles, the second doped metal oxide particles, and the second undoped metal oxide particles, the first tritium ion beam treatment can not only make the tritium ions adsorbed on the surface of the first inorganic semiconductor particles to form a first adsorption layer, but also make the tritium ions react with the oxygen ions and tritium ions on the surface of the first inorganic semiconductor particles to generate a first tritium oxide, and also make the tritium ions enter the interior of the first inorganic semiconductor particles and react with the oxygen ions inside the first inorganic semiconductor particles to generate a first tritium oxide, thereby introducing the first tritium oxide into the first inorganic semiconductor particles to form shallow donors or acceptors, thereby improving the electrical properties related to the conductivity of the first inorganic semiconductor particles and the carrier transport efficiency. In addition, the first tritium oxide can increase the impurity state in the first inorganic semiconductor particles, thereby optimizing the carrier transport performance, conductivity and stability of the first carrier functional layer 20.

[0058] In some embodiments, the average particle size of the first inorganic semiconductor particles is 3-4 nm.

[0059] The material of the metal single-element electrode includes but is not limited to Ag, Al, Cu, Co, Cr, Fe, Ni, Mn, Ti, V, Pt, Au, Ir, Mo, Ca, Mg and Ba.

[0060] The materials of the alloy electrode include but are not limited to CoCrFeNiMn, AlCrFeNiCoCu, Al 0.3 CrFeNiCo、Al 20(TiVCrMnFeCoNiCu) 80 , Au:Mg alloy and Ag:Mg alloy, etc.

[0061] Please read further Figures 2 to 9 In some embodiments, the method for preparing the optoelectronic device further includes: forming a light-emitting layer 40 on the first electrode 10 , wherein the light-emitting layer 40 is located between the first electrode 10 and the first carrier functional layer 20 .

[0062] In some other embodiments, forming the second electrode 30 on the first carrier functional layer 20 includes: forming a stacked light emitting layer 40 and the second electrode 30 on the first carrier functional layer 20 .

[0063] It can be understood that when the optoelectronic device 100 includes the light-emitting layer 40 , the optoelectronic device 100 is a light-emitting device.

[0064] In some embodiments, the method for preparing the optoelectronic device further includes: forming a second carrier functional layer 50 on the first electrode 10 , wherein the second carrier functional layer 50 is located between the first electrode 10 and the light emitting layer 40 .

[0065] In some embodiments, forming the second electrode 30 on the first carrier functional layer 20 includes: sequentially forming a stacked light emitting layer 40 , a second carrier functional layer 50 , and a second electrode 30 on the first carrier functional layer 20 .

[0066] The second carrier functional layer 50 may be a second electron functional layer or a second hole functional layer. It is understood that when the first carrier functional layer 20 is a first electron functional layer, the second carrier functional layer 50 is a second hole functional layer, and when the first carrier functional layer 20 is a first hole functional layer, the second carrier functional layer 50 is a second electron functional layer.

[0067] In some embodiments, the preparation method of the second carrier functional layer 50 includes: disposing second inorganic semiconductor particles on the light emitting layer 40 to obtain the second carrier functional layer 50 .

[0068] In some embodiments, after the second carrier functional layer 50 is prepared, the method further includes performing a second tritium ion beam treatment on the second carrier functional layer 50 .

[0069] When the second carrier functional layer 50 is subjected to a second tritium ion beam treatment, the tritium ions can be adsorbed on the surface of the second inorganic semiconductor particles to form a second adsorption layer, forming an implantation of tritium ions. On the one hand, the tritium ions can replace the non-metallic ions (such as oxygen ions) in the second inorganic semiconductor particles, thereby regulating the band gap of the second inorganic semiconductor particles and thereby improving the optical properties of the inorganic semiconductor particles, thereby improving the brightness, lifespan and current efficiency of the optoelectronic device and other performances; on the other hand, the implantation of tritium ions can adjust the lattice structure of the second inorganic semiconductor particles and reduce the defect density, thereby improving the thermal stability of the second inorganic semiconductor particles. and carrier transfer efficiency, thereby improving the life of the optoelectronic device; on the other hand, the implantation of tritium ions can introduce tritium ions to form shallow donors or acceptors. For example, for n-type semiconductors (electronic functional materials), if tritium atoms replace elements in the lattice of the first inorganic semiconductor particles, it will lead to a decrease in valence electrons, and tritium ions will become shallow donors. For p-type semiconductors (hole functional materials), if tritium ions replace elements in the lattice of the first inorganic semiconductor particles, it will lead to an increase in valence electrons, and tritium ions will become acceptors, thereby improving the electrical conductivity of the second inorganic semiconductor particles and related electrical properties such as carrier transfer efficiency. Further, when the second inorganic semiconductor particles contain oxygen, that is, when the second inorganic semiconductor particles are doped or undoped metal oxides, the second tritium ion beam treatment can introduce a second tritium oxide into the second inorganic semiconductor particles to form shallow donors or acceptors, thereby improving the electrical conductivity of the second inorganic semiconductor particles and related electrical properties such as carrier transfer efficiency. In addition, the second tritium oxide can increase the impurity state in the second inorganic semiconductor particles, thereby optimizing the carrier transport performance, conductivity, stability and other properties of the second carrier functional layer 50 .

[0070] In some embodiments, in the second carrier functional layer 50, the molar ratio of the tritium ions to the second inorganic semiconductor particles is (0.02-0.1): 1, for example, 0.02: 1, 0.03: 1, 0.04: 1, 0.05: 1, 0.06: 1, 0.07: 1, 0.08: 1, 0.09: 1, 0.1: 1. Within the molar ratio range, the carrier transport performance, conductivity, stability and other properties of the second carrier functional layer 50 can be effectively optimized.

[0071] In at least some embodiments, the first tritium ion beam treatment and the second tritium ion beam treatment are pulsed tritium ion beam treatments.

[0072] When the first electrode 10 is subjected to the first tritium ion beam treatment (pulsed tritium ion beam treatment) and when the second electrode 30 is subjected to the first tritium ion beam treatment, the first tritium ion beam treatment parameters can be independently as follows: the tritium ion energy ranges from 15 to 50 keV, the tritium ion dose ranges from 3×10 13 ~8×10 13 ions / cm 2 The flow rate of tritium ions is in the range of 2 to 10 sccm, and the processing time is in the range of 50 to 200 s. Within the above range, the first electrode 10 and the second electrode 30 can be effectively implanted with tritium ions, which is conducive to preparing the first electrode 10 and the second electrode 30 with better stability and conductivity.

[0073] When the first carrier functional layer 20 is subjected to the first tritium ion beam treatment and the second carrier functional layer 50 is subjected to the second tritium ion beam treatment, the parameters of the first tritium ion beam treatment and the second tritium ion beam treatment can be independently as follows: the tritium ion energy ranges from 10 to 25 keV, the tritium ion dose ranges from 1×10 13 ~5×10 13 ions / cm 2 , the flow rate of tritium ions is in the range of 2 to 10 sccm, and the processing time is in the range of 50 to 200 s. Within the above range, the first carrier functional layer 20 and the second carrier functional layer 50 can be effectively implanted with tritium ions, which is conducive to preparing the first carrier functional layer 20 and the second carrier functional layer 50 with better stability and electron transport performance.

[0074] When the second carrier functional layer 50 is a second electronic functional layer, the second inorganic semiconductor particles are inorganic particles known to be used in the electronic functional layer of optoelectronic devices, for example, may include but are not limited to the first doped metal oxide particles described above, the first undoped metal oxide particles described above, the IIB-VIA semiconductor material described above, the IIIA-VA semiconductor material described above and one or more of the IB-IIIA-VIA semiconductor material described above.

[0075] When the second carrier functional layer 50 is a second hole functional layer, the second inorganic semiconductor particles are inorganic particles known to be used in the hole functional layer of optoelectronic devices, for example, may include but are not limited to the second doped metal oxide particles described above, the second undoped metal oxide particles described above, the metal sulfide described above, the metal selenide described above and one or more of the metal nitrides.

[0076] When the second inorganic semiconductor particles contain oxygen, that is, when the second inorganic semiconductor particles are doped or undoped metal oxide particles, such as the first doped metal oxide particles, the first undoped metal oxide particles, the second doped metal oxide particles, and the second undoped metal oxide particles, the second tritium ion beam treatment can not only make the tritium ions adsorbed on the surface of the second inorganic semiconductor particles to form a second adsorption layer, but also make the tritium ions react with the oxygen ions on the surface of the second inorganic semiconductor particles to generate a second tritium oxide, and also make the tritium ions enter the interior of the second inorganic semiconductor particles and react with the oxygen ions to generate a second tritium oxide, thereby introducing the second tritium oxide into the second inorganic semiconductor particles to form shallow donors or acceptors, thereby improving the electrical properties related to the conductivity of the second inorganic semiconductor particles and the carrier transport efficiency. In addition, the second tritium oxide can increase the impurity state in the second inorganic semiconductor particles, thereby optimizing the carrier transport performance, conductivity and stability of the second carrier functional layer 50.

[0077] In some embodiments, the average particle size of the second inorganic semiconductor particles is 4-8 nm.

[0078] It can be understood that the second electron functional layer can be a second electron transport layer or a second electron injection layer.

[0079] It can be understood that the second hole functional layer can be a second hole transport layer or a second hole injection layer.

[0080] The method for forming the second electrode 30 and the light-emitting layer 40 described in the present application, the method for setting the first inorganic semiconductor particles on the optoelectronic device preform, and the method for setting the second inorganic semiconductor particles on the light-emitting layer 40 can be implemented by conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical method includes chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition, and coprecipitation. The physical method includes physical plating and solution method, wherein the physical plating method includes: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition, pulsed laser deposition, etc.; the solution method can be spin coating, printing, inkjet printing, doctor blade coating, printing, dip-coating, immersion, spraying, roll coating, casting, slit coating, and strip coating.

[0081] In at least some embodiments, disposing the first inorganic semiconductor particles on the first electrode 10 includes: mixing the first inorganic semiconductor particles and a first solvent to obtain a first dispersion, and disposing the first dispersion on the first electrode 10 .

[0082] In at least some embodiments, disposing the second inorganic semiconductor particles on the light-emitting layer 40 includes: mixing the second inorganic semiconductor particles and a second solvent to obtain a second dispersion, and disposing the second dispersion on the light-emitting layer 40 .

[0083] In some embodiments, after disposing the first dispersion on the optoelectronic device preform, the process further comprises: -4 ~10 -2 MPa environment for 10 to 30 minutes to perform vacuum drying. In this way, the solvent can be effectively removed and the prepared first carrier functional layer 20 can have better film-forming properties, and thus have better electrical conductivity, carrier transport and stability.

[0084] In some embodiments, after the second dispersion is disposed on the light-emitting layer 40, the method further comprises: -4 ~10 -2 MPa environment for 10 to 30 minutes to perform vacuum drying. In this way, the solvent can be effectively removed and the prepared second carrier functional layer 50 can have better film-forming properties, and thus have better electrical conductivity, carrier transport and stability.

[0085] The first solvent and the second solvent may independently include, but are not limited to, one or more of isopropanol, ethanol, DMSO (dimethyl sulfoxide), NMP (N-methylpyrrolidone) and chlorobenzene.

[0086] In some embodiments, in the first dispersion, the concentration of the first inorganic semiconductor particles is 10-30 mg / ml, for example, 10 mg / ml, 12 mg / ml, 15 mg / ml, 16 mg / ml, 18 mg / ml, 20 mg / ml, 22 mg / ml, 25 mg / ml, 28 mg / ml, 30 mg / ml, etc. Within the concentration range, it is beneficial to prepare a wet film with good film forming properties, and further to prepare a first carrier functional layer 20 with good film forming properties.

[0087] In some embodiments, in the second dispersion, the concentration of the second inorganic semiconductor particles is 10-30 mg / ml, for example, 10 mg / ml, 12 mg / ml, 15 mg / ml, 16 mg / ml, 18 mg / ml, 20 mg / ml, 22 mg / ml, 25 mg / ml, 28 mg / ml, 30 mg / ml, etc. Within the concentration range, it is beneficial to prepare the second carrier functional layer 50 with better film-forming properties.

[0088] In some embodiments, disposing the first inorganic semiconductor particles on the first electrode 10 includes: disposing the first inorganic semiconductor particles on the first electrode 10 by atomic layer deposition, and performing tritium gas treatment while the atomic layer deposition is performed.

[0089] In some embodiments, disposing the second inorganic semiconductor particles on the light emitting layer 40 includes: disposing the second inorganic semiconductor particles on the light emitting layer 40 by atomic layer deposition, and performing tritium gas treatment while performing atomic layer deposition.

[0090] In some embodiments, the tritium gas flow rate of the tritium gas treatment is 2-10 sccm.

[0091] Since long tritium ion beam treatment time (pulsed tritium gas treatment) may affect QD performance, in order to reduce the time of tritium ion beam treatment, tritium gas treatment is performed at the same time as atomic layer deposition, and direct tritium gas implantation is performed to directly introduce tritium gas molecules into the growth process of ZnO thin film atomic layer deposition, so that tritium gas molecules are combined with ZnO lattice atoms. In this way, a short time of tritium ion treatment after ZnO film formation can achieve better results and help achieve a more uniform tritium distribution in the ZnO material.

[0092] In some embodiments, when tritium gas treatment is performed simultaneously with atomic layer deposition, the time of tritium ion beam treatment can be shortened to 10 to 150 seconds.

[0093] In some embodiments, the number of cycles of the atomic layer deposition may be 10 to 20. The thickness of the first carrier functional layer 20 and the second carrier functional layer 50 formed by the atomic layer deposition may be 30 to 50 nm, respectively.

[0094] When the first electrode 10 and / or the second electrode 30 do not need to be treated with the first tritium ion beam, the first electrode 10 and the second electrode 30 are electrodes known in the art for optoelectronic devices, for example, they can each independently include but are not limited to doped metal oxide electrodes, composite electrodes, graphene electrodes, carbon nanotube electrodes, and the metal single substance electrodes or alloy electrodes described above. The material of the doped metal oxide electrode can include but is not limited to one or more of indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), antimony doped tin oxide (ATO), aluminum doped zinc oxide (AZO), gallium doped zinc oxide (GZO), indium doped zinc oxide (IZO), magnesium doped zinc oxide (MZO), aluminum doped magnesium oxide (AMO), and cadmium doped zinc oxide. The composite electrode is an electrode formed by stacking two or more layers of conductive materials, such as AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, Ca / Al, LiF / Ca, LiF / Al, BaF2 / Al, CsF / Al, CaCO3 / Al, BaF2 / Ca / Al, etc., wherein “ / ” represents a stacked structure, for example, AZO / Ag / AZO represents a composite electrode comprising sequentially stacked AZO layers, Ag layers and AZO layers.

[0095] In some embodiments, when the first carrier functional layer 20 is a first electronic functional layer, and the first carrier functional layer 20 does not need to be treated with a first tritium ion beam, and / or the second carrier functional layer 50 is a second electronic functional layer, and the second carrier functional layer 50 does not need to be treated with a second tritium ion beam, the material of the first electronic functional layer and / or the second electronic functional layer can be a material known in the art for an electronic functional layer, for example, each independently selected from but not limited to one or more of an inorganic electronic functional material and an organic electronic functional material. The inorganic electronic functional material includes but is not limited to the first doped metal oxide particles described above, the first non-doped metal oxide particles described above, the IIB-VIA semiconductor material described above, the IIIA-VA semiconductor material described above, and the IB-IIIA-VIA semiconductor material described above. The organic electronic functional material includes but is not limited to one or more of quinoxaline compounds, imidazole compounds, triazine compounds, fluorene-containing compounds, hydroxyquinoline compounds, and fullerene derivatives (PCBM).

[0096] In some embodiments, when the first carrier functional layer 20 is a first hole functional layer, and the first carrier functional layer 20 does not need to be treated with a first tritium ion beam, and / or the second carrier functional layer 50 is a second hole functional layer, and the second carrier functional layer 50 does not need to be treated with a second tritium ion beam, the material of the first hole functional layer and / or the second hole functional layer can be a material known in the art for a hole functional layer, for example, can be selected from but not limited to 4,4'-N,N'-dicarbazolyl-biphenyl (CBP), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4, 4"-diamine (α-NPD), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (Poly-TPD), N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-spiro (spiro-TPD), N,N'-bis(4-(N,N'-diphenyl-amino)phenyl)-N,N'-diphenylbenzidine (DNTPD), 4,4',4'-tri(N-carbazolyl)-triphenylamine (TCTA), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA ), poly[(9,9'-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine))] (TFB), poly(N-vinylcarbazole) (PVK) and its derivatives, N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4-4'-diamine (NPB), spiro NPB, poly(phenylene vinylene) (PPV), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV), poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MOMO-PPV), 2,2',7,7'-tetra[N,N- [4-methoxyphenyl] amino]-9,9'-spirobifluorene (spiro-omeTAD), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC), 1,3-bis(carbazole-9-yl)benzene (MCP), polyaniline, polypyrrole, poly(p-phenylene vinylene), aromatic tertiary amines, polynuclear aromatic tertiary amines, 4,4'-bis(p-carbazolyl)-1,1'-biphenyl compounds, N,N,N',N'-tetraarylbenzidine, PEDOT:PSS and its derivatives, polymethacrylate and its derivatives, poly(9,9-octylfluorene) and its derivatives, poly(spirofluorene) and its derivatives, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HAT-CN), PEDOT, PEDOT:PSS, PEDOT:PSS derivative doped with s-MoO3 (PEDOT:PSS:s-MoO3), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA), tetracyanoquinodimethane (F4-TCQN), doped graphene, undoped graphene, C60, copper phthalocyanine, and one or more of the second doped metal oxide particles described above, the second undoped metal oxide particles described above, the metal sulfide described above, the metal selenide described above, and the metal nitride described above. ,

[0097] The material of the light-emitting layer 40 may include, but is not limited to, one or more of an organic light-emitting material and a quantum dot light-emitting material.

[0098] The organic light-emitting material may include, but is not limited to, one or more of CBP:Ir(mppy)3(4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III)), TCTX:Ir(mmpy)(4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium), diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, TADF (thermally activated delay) materials, polymers containing covalent bonds of BN, HLCT (hybridized localized charge transfer excited state) materials, Exciplex (exciplex) light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0099] The quantum dot light-emitting material may include, but is not limited to, one or more of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor materials.

[0100] The material of the single structure quantum dots, the core material of the core-shell structure quantum dots and the shell material of the core-shell structure quantum dots may respectively include but are not limited to one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds may include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe. The IV-VI group compounds may include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. The III-V group compound may include, but is not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The I-III-VI group compound may include, but is not limited to, one or more of CuInS2, CuInSe2, and AgInS2.

[0101] As an example, the core-shell structured quantum dots may include, but are not limited to, one or more of CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0102] The perovskite semiconductor material may include but is not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors. The inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - The general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of .

[0103] It can be understood that when the optoelectronic device 100 also includes functional layers conventionally used in optoelectronic devices that help improve the performance of the optoelectronic device, such as an electron blocking layer, a hole blocking layer, an interface modification layer, etc., the preparation method of the optoelectronic device 100 may also include the step of preparing the above-mentioned functional layers using conventional techniques in the field.

[0104] It can be understood that the materials of each layer of the optoelectronic device 100 can be adjusted according to the light emitting requirements of the optoelectronic device 100 .

[0105] In some embodiments, the optoelectronic device preform further includes a substrate, and the first electrode 10 is disposed on the substrate.

[0106] The substrate may be a rigid substrate or a flexible substrate. In some embodiments, the material of the substrate may include but is not limited to one or more of glass, silicon wafer, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide and polyether sulfone.

[0107] It is understood that the optoelectronic device 100 may be an upright optoelectronic device or an inverted optoelectronic device. The optoelectronic device 100 may be a quantum dot optoelectronic device or an organic optoelectronic device.

[0108] Second, see Figures 2-3 The embodiment of the present application further provides a photoelectric device 100 prepared by the above-mentioned preparation method, comprising a first electrode 10, a first carrier functional layer 20 and a second electrode 30 which are stacked.

[0109] In some embodiments, the material of the first carrier functional layer 20 includes first inorganic semiconductor particles, the surface of the first inorganic semiconductor particles is coated with a first adsorption layer, and the first adsorption layer includes tritium ions.

[0110] In some embodiments, the material of the first carrier functional layer 20 further includes a first tritium oxide, and the first tritium oxide is located on the surface and / or inside of the first inorganic semiconductor particle.

[0111] In some embodiments, the optoelectronic device further includes a first metal tritide layer 11 , wherein the first metal tritide layer 11 is bonded to a surface of the first electrode 10 close to the first carrier functional layer 20 .

[0112] In some embodiments, the optoelectronic device further includes a second metal tritium layer 31 , wherein the second metal tritium layer 31 is bonded to a surface of the second electrode 30 away from the first carrier functional layer 20 .

[0113] The optoelectronic device further includes a light-emitting layer 40 , and the light-emitting layer 40 is located between the first electrode 10 and the first carrier functional layer 20 , or the light-emitting layer 40 is located between the second electrode 30 and the first carrier functional layer 20 .

[0114] In some embodiments, the optoelectronic device further includes a second carrier functional layer 50. When the light-emitting layer 40 is located between the first electrode 10 and the first carrier functional layer 20, the second carrier functional layer 50 is located between the first electrode 10 and the light-emitting layer 40; when the light-emitting layer 40 is located between the second electrode 30 and the first carrier functional layer 20, the second carrier functional layer 50 is located between the second electrode 30 and the light-emitting layer 40.

[0115] In some embodiments, the material of the second carrier functional layer 50 includes second inorganic semiconductor particles, the surface of the second inorganic semiconductor particles is coated with a second adsorption layer, and the second adsorption layer includes tritium ions.

[0116] In some embodiments, the material of the second carrier functional layer 50 further includes a second tritium oxide, and the second tritium oxide is located on the surface and / or inside of the first inorganic semiconductor particles.

[0117] The first carrier functional layer 20, the first inorganic semiconductor particles, the second carrier functional layer 50, the second inorganic semiconductor particles, the molar ratio of tritium ions to the first inorganic semiconductor particles in the first carrier functional layer 20, the molar ratio of tritium ions to the second inorganic semiconductor particles in the second carrier functional layer 50, the first electrode 10, the second electrode 30, the light-emitting layer 40, the first metal tritium layer 11, and the second metal tritium layer 31 are as described above and will not be repeated here.

[0118] In a third aspect, the present application further relates to a display device, wherein the display device comprises the optoelectronic device 100 .

[0119] The display device can be any electronic product with a display function, including but not limited to smart phones, tablet computers, laptops, digital cameras, digital video cameras, smart wearable devices, smart weighing electronic scales, car displays, televisions or e-book readers, among which smart wearable devices can be, for example, smart bracelets, smart watches, virtual reality (VR) helmets, etc.

[0120] The present application is described in detail below through specific embodiments. The following embodiments are only partial embodiments of the present application and are not limitations of the present application.

[0121] Example 1

[0122] Providing a substrate including an ITO anode (first electrode);

[0123] Spin coating PEDOT:PSS material on the ITO anode at a rotation speed of 5000 rpm for 30 seconds, and then heating at 150° C. for 15 minutes to obtain a hole injection layer;

[0124] The hole injection layer was spin-coated with a TFB material having a concentration of 8 mg / mL at a rotation speed of 3000 rpm for 30 seconds, and then heated at 120° C. for 10 minutes to obtain a hole transport layer;

[0125] Spin-coat a CdSe / ZnSe / ZnS quantum dot material with a concentration of 20 mg / mL on the hole transport layer at a rotation speed of 2000 rpm for 30 seconds to obtain a light-emitting layer;

[0126] The ZnO material with a concentration of 30 mg / mL was spin-coated on the light-emitting layer at a speed of 3000 rpm for 30 s. - 2 MPa environment for 15 min to obtain an electron transport layer;

[0127] The electron transport layer is treated with a tritium ion beam, wherein the tritium ion energy is 20 keV and the tritium ion dose is 1×10 13 ions / cm 2 , the flow rate of tritium ions is 5 sccm, and the processing time is 100 s;

[0128] Ag is evaporated on the electron transport layer, wherein the vacuum degree is not higher than 3×10 -4 Pa, the evaporation rate is 1 angstrom / second, the time is 200s, and a cathode (second electrode) with a thickness of 20nm is obtained;

[0129] The optoelectronic device 100 is encapsulated with epoxy resin.

[0130] Example 2

[0131] This embodiment is basically the same as the embodiment 1, except that the electron transport layer of this embodiment is prepared by atomic layer deposition, and the atomic layer deposition and the tritium gas treatment are performed simultaneously. Specifically:

[0132] Depositing ZnO on the light-emitting layer by atomic layer deposition, and performing tritium gas treatment while the atomic layer deposition is performed, wherein the flow rate of the tritium gas is 2 sccm, and the atomic layer deposition and the tritium gas treatment are completed at the same time, to obtain an electron transport layer;

[0133] The electron transport layer is treated with a tritium ion beam, wherein the tritium ion energy is 20 keV and the tritium ion dose is 1×1013 ions / cm 2 , the flow rate of tritium ions is 5 sccm, and the processing time is 50 s.

[0134] Example 3

[0135] This embodiment is basically the same as the embodiment 2, except that, in this embodiment, after the Ag cathode is prepared, the cathode is further treated with a tritium ion beam, wherein the tritium ion energy is 30 keV and the tritium ion dose is 5×10 13 ions / cm 2 , the flow rate of tritium ions is 7.5 sccm, and the processing time is 100 s.

[0136] Example 4

[0137] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, the energy of tritium ions is 10 keV.

[0138] Example 5

[0139] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, the energy of tritium ions is 25 keV.

[0140] Example 6

[0141] This embodiment is basically the same as embodiment 1, except that in this embodiment, the tritium ion dose is 2.5×10 13 ions / cm 2 .

[0142] Example 7

[0143] This embodiment is basically the same as embodiment 1, except that in this embodiment, the tritium ion dose is 5×10 13 ions / cm 2 .

[0144] Example 8

[0145] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, the flow rate of tritium ions is 2 sccm.

[0146] Example 9

[0147] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, the flow rate of tritium ions is 10 sccm.

[0148] Example 10

[0149] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, the time of tritium ion beam treatment is 50 seconds.

[0150] Embodiment 11

[0151] This embodiment is basically the same as Embodiment 1, except that, in this embodiment, the time of tritium ion beam treatment is 200 s.

[0152] Example 12

[0153] This embodiment is substantially the same as Embodiment 1, except that, in this embodiment, Mg-doped ZnO is used to replace ZnO in Embodiment 1.

[0154] Embodiment 13

[0155] This embodiment is basically the same as Embodiment 1, except that, in this embodiment, SnO2 is used to replace ZnO in Embodiment 1.

[0156] Embodiment 14

[0157] This embodiment is substantially the same as Embodiment 1, except that in this embodiment, GaP is used to replace ZnO in Embodiment 1.

[0158] Embodiment 15

[0159] This embodiment is basically the same as the embodiment 1, except that in this embodiment, the electron transport layer is not treated with a tritium ion beam, but the Ag cathode is treated with a tritium ion beam. Specifically:

[0160] The cathode is treated with a tritium ion beam, so that the metal on the surface of the cathode away from the electron transport layer reacts with the tritium ions to form a metal tritide layer (tritium silver layer), wherein the tritium ion energy is 30 keV and the tritium ion dose is 5×10 13 ions / cm 2 , the flow rate of tritium ions is 7.5 sccm, and the processing time is 100 s.

[0161] Example 16

[0162] This embodiment is basically the same as the embodiment 1, except that the material of the anode in this embodiment is Au, and in this embodiment, the electron transport layer is not treated with a tritium ion beam, but the anode is treated with a tritium ion beam. Specifically:

[0163] The anode is treated with a tritium ion beam to react the metal on the surface of the anode away from the substrate with the tritium ions to form a metal tritide layer (tritiated gold), wherein the tritium ion energy is 30 keV and the tritium ion dose is 5×10 13 ions / cm 2 , the flow rate of tritium ions is 7.5 sccm, and the processing time is 100 s.

[0164] Embodiment 17

[0165] This embodiment is basically the same as Embodiment 1, except that, in this embodiment, the electron transport layer is not subjected to tritium ion beam treatment, but the hole transport layer is subjected to tritium ion beam treatment, and the material of the hole transport layer is NiO. Specifically, the preparation and treatment method of the hole transport layer in this embodiment is as follows:

[0166] The NiO material with a concentration of 30 mg / mL was spin-coated on the hole injection layer at a speed of 3000 rpm for 30 s. -2 MPa environment for 15 min to obtain a hole transport layer;

[0167] The hole transport layer is treated with a tritium ion beam to form a tritium ion adsorption layer on the surface of the NiO particles, wherein the tritium ion energy is 20 keV and the tritium ion dose is 1×10 13 ions / cm 2 , the flow rate of tritium ions is 5 sccm, and the processing time is 100 s.

[0168] Embodiment 18

[0169] This embodiment is basically the same as the embodiment 1, except that in this embodiment, the material of the hole transport layer is NiO, and the hole transport layer and the cathode of this embodiment are both treated with a tritium ion beam, specifically:

[0170] Providing a substrate including an Au anode (first electrode);

[0171] The anode is treated with a tritium ion beam to make the metal on the surface of the anode away from the substrate react with the tritium ions to form a metal tritide layer (tritiated gold layer), wherein the tritium ion energy is 30 keV and the tritium ion dose is 5×10 13 ions / cm 2 , the flow rate of tritium ions is 7.5 sccm, and the processing time is 100 s;

[0172] Spin coating PEDOT:PSS material on the ITO anode at a rotation speed of 5000 rpm for 30 seconds, and then heating at 150° C. for 15 minutes to obtain a hole injection layer;

[0173] The NiO material with a concentration of 30 mg / mL was spin-coated on the hole injection layer at a speed of 3000 rpm for 30 s. -2 MPa environment for 15 min to obtain a hole transport layer;

[0174] The hole transport layer is treated with a tritium ion beam to form a tritium ion adsorption layer on the surface of the NiO particles, wherein the tritium ion energy is 20 keV and the tritium ion dose is 1×10 13 ions / cm 2, the flow rate of tritium ions is 5 sccm, and the processing time is 100 s;

[0175] Spin-coat a CdSe / ZnSe / ZnS quantum dot material with a concentration of 20 mg / mL on the hole transport layer at a rotation speed of 2000 rpm for 30 seconds to obtain a light-emitting layer;

[0176] The ZnO material with a concentration of 30 mg / mL was spin-coated on the light-emitting layer at a speed of 3000 rpm for 30 s. - 2 MPa environment for 15 min to obtain an electron transport layer;

[0177] The electron transport layer is treated with a tritium ion beam to form a tritium ion adsorption layer on the surface of the ZnO particles, wherein the tritium ion energy is 20 keV and the tritium ion dose is 1×10 13 ions / cm 2 , the flow rate of tritium ions is 5 sccm, and the processing time is 100 s;

[0178] Ag is evaporated on the electron transport layer, wherein the vacuum degree is not higher than 3×10 -4 Pa, the evaporation rate is 1 angstrom / second, the time is 200s, and a cathode (second electrode) with a thickness of 20nm is obtained;

[0179] The cathode is treated with a tritium ion beam, so that the metal on the surface of the cathode away from the electron transport layer reacts with the tritium ions to form a metal tritide layer (tritium silver layer), wherein the tritium ion energy is 30 keV and the tritium ion dose is 5×10 13 ions / cm 2 , the tritium gas flow rate is 7.5 sccm, and the processing time is 100 s;

[0180] The optoelectronic device 100 is encapsulated with epoxy resin.

[0181] Embodiment 19

[0182] providing a substrate including an Ag cathode (first electrode);

[0183] The TiO2 material with a concentration of 30 mg / mL was spin-coated on the Ag cathode at a speed of 3000 rpm for 30 s, and then - 2 MPa environment for 15 min to obtain an electron transport layer;

[0184] The electron transport layer is treated with a tritium ion beam to form a tritium ion adsorption layer on the surface of the TiO2 particles, wherein the tritium ion energy is 20 keV and the tritium ion dose is 1×10 13 ions / cm2 , the flow rate of tritium ions is 5 sccm, and the processing time is 100 s;

[0185] Spin-coat a CdSe / ZnSe / ZnS quantum dot material with a concentration of 20 mg / mL on the electron transport layer at a rotation speed of 2000 rpm for 30 seconds to obtain a light-emitting layer;

[0186] The MoS3 material with a concentration of 30 mg / mL was spin-coated on the light-emitting layer at a speed of 3000 rpm for 30 s, and then - 2 MPa environment for 15 min to obtain a hole transport layer;

[0187] Spin coating the PEDOT:PSS material on the hole transport layer at a rotation speed of 5000 rpm for 30 seconds, and then heating at 150° C. for 15 minutes to obtain a hole injection layer;

[0188] ITO is evaporated on the hole injection layer, wherein the vacuum degree is not higher than 3 x 10 -4 Pa, the evaporation rate is 1 angstrom / second, the time is 200s, and the anode (second electrode) with a thickness of 20nm is obtained;

[0189] The optoelectronic device 100 is encapsulated with epoxy resin.

[0190] Embodiment 20

[0191] This embodiment is basically the same as Embodiment 19, except that in this embodiment, the electron transport layer is not subjected to tritium ion beam treatment, but the hole transport layer is subjected to tritium ion beam treatment. Specifically:

[0192] The hole transport layer is treated with a tritium ion beam to form a tritium ion adsorption layer on the surface of the MoS3 particles, wherein the tritium ion energy is 20 keV and the tritium ion dose is 1×10 13 ions / cm 2 , the flow rate of tritium ions is 5 sccm, and the processing time is 100 s.

[0193] Embodiment 21

[0194] This embodiment is basically the same as Embodiment 19, except that Au is used in this embodiment to replace the ITO in Embodiment 19, and in this embodiment, the electron transport layer is not treated with a tritium ion beam, but the anode is treated with a tritium ion beam. Specifically:

[0195] The anode is treated with a tritium ion beam to make the metal on the surface of the anode away from the hole transport layer react with the tritium ions to form a metal tritide layer (tritiated gold layer), wherein the tritium ion energy is 30 keV and the tritium ion dose is 5×10 13ions / cm 2 , the flow rate of tritium ions is 7.5 sccm, and the processing time is 100 s.

[0196] Comparative Example 1

[0197] This comparative example is substantially the same as Example 1, except that, in this comparative example, the electron transport layer is not subjected to tritium ion beam treatment.

[0198] Comparative Example 2

[0199] This comparative example is basically the same as Example 19, except that in this comparative example, the electron transport layer is not treated with a tritium ion beam.

[0200] The electron transport layer or hole transport layer treated with tritium ions in Examples 1 to 14 and 17 to 20 was tested by spherical aberration electron microscopy to obtain Fig.10 The distribution diagram of Zn element in the electron transport layer treated with tritium ions in Example 1 is shown in FIG. Fig.11 The distribution diagram of tritium element in the electron transport layer of Example 1 after tritium ion treatment is shown in spherical aberration electron microscope, and the molar ratio of tritium element to inorganic particles in Table 1.

[0201] Depend on Fig.10 and Fig.11 It can be seen that the molar ratio of tritium element (ie, tritium ions) to Zn element in the electron transport layer after tritium ion treatment in Example 1 is 0.04:1.

[0202] The method for the spherical aberration electron microscope element distribution test comprises the following steps:

[0203] A. Electron beam generation and acceleration: In the electron gun, a high-energy electron beam is generated by thermoelectric emission or field emission, and then accelerated by an accelerating voltage;

[0204] B. Electron beam focusing and spherical aberration correction: The electron beam is focused by electromagnetic lenses (such as condensing lenses and objective lenses). In a spherical aberration-corrected transmission electron microscope, a spherical aberration corrector is used to eliminate the spherical aberration effect and improve the focusing performance of the electron beam, thereby achieving higher resolution.

[0205] C. Scanning transmission imaging: In STEM mode, the electron beam is scanned across the sample surface, and the electron signals that pass through or scatter to the side are detected. Common imaging modes include high-angle young field scattering imaging (HAADF) and bright field imaging (BF).

[0206] Photoelectric device performance testing:

[0207] The maximum brightness L of the optoelectronic devices of Examples 1 to 21 and Comparative Examples 1 to 3 is max, lifespan T95, lifespan T95@1000nit, current efficiency CE, and thickness of metal tritium layer were tested respectively. See Table 1 for the test results.

[0208] The test method of current efficiency CE is as follows: using FPD optical property measurement equipment from Foster, controlling the efficiency test system built by QE PRO spectrometer, Keithley 2400, and Keithley 6485 through LabView, measuring parameters such as voltage, current, brightness, and luminous spectrum, and calculating the current efficiency;

[0209] The maximum brightness was measured using a luminance meter PR650, where the drive current was a constant current of 2 mA;

[0210] The test method for life span T95 and life span T95@1000nit is: in CDA gas, under constant current drive, measure the time taken for the device brightness to decay to a certain proportion of the maximum brightness, and the time taken for the brightness to decay to 95% of the maximum brightness is defined as T95, and the life span is the measured life span. In order to shorten the life span test cycle, the device life span test is usually carried out at high brightness by accelerating device aging, and the life span at low brightness is obtained by fitting the decay fitting formula. For example, the life span at 1000nits is recorded as T95@1000nits, and the calculation formula is:

[0211]

[0212] Among them, T95 L The lifespan under low brightness, generally 1000nits, T95 H is the lifespan under high brightness, that is, the measured lifespan, L H is the maximum brightness that the device is accelerated to, L L Generally, it is 1000nits, A is the acceleration factor, which is 1.7. The constant current is 2mA.

[0213] Table 1:

[0214]

[0215]

[0216] From Table 1 we can see that:

[0217] The electron transport layers of the optoelectronic devices of Examples 1 to 14, 18 to 19 all contain tritium, the hole transport layers of the optoelectronic devices of Examples 17 to 18 and 20 all contain tritium, the cathode side of the optoelectronic devices of Examples 3, 15 and 18 is formed with a metal tritide layer, and the anode side of the optoelectronic devices of Examples 16, 18 and 21 is formed with a metal tritide layer;

[0218] Compared with the upright photoelectric device of comparative example 1, the upright photoelectric devices of embodiments 1 to 12 and 15 to 18 have higher brightness, longer life and higher current efficiency. The reason is that the photoelectric devices of embodiments 1 to 12 and 15 to 18 have at least one of the electron transport layer, the hole transport layer, the anode and the cathode treated with tritium gas, which effectively improves the performance of the photoelectric device such as the carrier transport efficiency and stability.

[0219] Compared with the inverted photoelectric device of comparative example 2, the inverted photoelectric devices of embodiments 19 to 21 have higher brightness, longer life and higher current efficiency. The reason is that the photoelectric devices of embodiments 19 to 21 have at least one of the electron transport layer, the hole transport layer, the anode and the cathode treated with tritium gas, which effectively improves the performance of the photoelectric device such as carrier transport efficiency and stability.

[0220] Compared with the optoelectronic devices of Example 1 and Comparative Example 1, the brightness, lifespan and current efficiency of the optoelectronic device of Example 13 are lower because the material of the electron transport layer of Example 13 is SnO2, which has a lower electron transport efficiency than ZnO;

[0221] Compared with the upright photoelectric devices of Examples 1, 16, and 17, the upright photoelectric device of Example 18 has higher brightness, longer life, and higher current efficiency. The reason is that the photoelectric device of Example 18 has undergone tritium gas treatment on the electron transport layer, hole transport layer, anode, and cathode, which effectively improves the carrier transport efficiency and stability of the photoelectric device.

[0222] The above is a detailed introduction to the preparation method of the optoelectronic device, the optoelectronic device and the display device provided in the embodiments of the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A photoelectric device, characterized in that: It comprises a first electrode, a first carrier functional layer and a second electrode which are stacked, wherein: The material of the first carrier functional layer includes first inorganic semiconductor particles, the surface of the first inorganic semiconductor particles is coated with a first adsorption layer, and the first adsorption layer includes tritium ions; and / or The optoelectronic device further comprises a first metal tritide layer, wherein the first metal tritide layer is bonded to a surface of the first electrode close to the first carrier functional layer; and / or The optoelectronic device further includes a second metal tritide layer bonded to a surface of the second electrode remote from the first carrier functional layer.

2. The optoelectronic device according to claim 1, characterized in that In the first carrier functional layer, the molar ratio of the tritium ions to the first inorganic semiconductor particles is (0.02-0.1):

1.

3. The optoelectronic device according to claim 1, characterized in that The first carrier functional layer is a first electronic functional layer, the first inorganic semiconductor particles include first doped metal oxide particles, first undoped metal oxide particles, one or more of Group IIB-VIA semiconductor materials, Group IIIA-VA semiconductor materials and Group IB-IIIA-VIA semiconductor materials, the material of the first undoped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, the metal oxide in the first doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, Ta2O5, and Al2O3, the doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, and Ga, the Group IIB-VIA semiconductor materials include one or more of ZnS, ZnSe, and CdS, the Group IIIA-VA semiconductor materials include one or more of InP and GaP, and the Group IB-IIIA-VIA semiconductor materials include one or more of CuInS and CuGaS; or The first carrier functional layer is a first hole functional layer, the first inorganic semiconductor particles include one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfides include one or more of CuS, MoS3, WS3, the metal selenides include one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

4. The optoelectronic device according to claim 1, characterized in that The material of the first carrier functional layer further includes a first tritium oxide; and / or The material of the first metal tritide layer and the material of the second metal tritide layer each independently include one or more of tritiated silver, tritiated aluminum, tritiated copper, tritiated cobalt, tritiated chromium, tritiated iron, tritiated nickel, tritiated manganese, tritiated titanium, tritiated vanadium, tritiated platinum, tritiated gold, tritiated iridium, tritiated molybdenum, tritiated calcium, tritiated magnesium, tritiated barium; and / or The thickness of the first metal tritium layer and the thickness of the second metal tritium layer are each independently 3 to 5 nm.

5. The optoelectronic device according to claim 1, wherein: The optoelectronic device further includes a light-emitting layer, wherein the light-emitting layer is located between the first electrode and the first carrier functional layer, or the light-emitting layer is located between the second electrode and the first carrier functional layer.

6. The optoelectronic device according to claim 5, characterized in that The optoelectronic device further comprises a second carrier functional layer, wherein: When the light-emitting layer is located between the first electrode and the first carrier functional layer, the second carrier functional layer is located between the first electrode and the light-emitting layer; or When the light-emitting layer is located between the second electrode and the first carrier functional layer, the second carrier functional layer is located between the second electrode and the light-emitting layer.

7. The optoelectronic device according to claim 6, characterized in that The material of the second carrier functional layer includes second inorganic semiconductor particles, the surface of the second inorganic semiconductor particles is coated with a second adsorption layer, and the second adsorption layer includes tritium ions.

8. The optoelectronic device according to claim 7, characterized in that In the second carrier functional layer, the molar ratio of the tritium ions to the second inorganic semiconductor particles is (0.02-0.1):1; and / or The material of the second carrier functional layer further includes a second tritium oxide.

9. The optoelectronic device according to claim 7, characterized in that: When the first carrier functional layer is a first hole functional layer, the second carrier functional layer is a second electron functional layer, the second inorganic semiconductor particles include first doped metal oxide particles, first non-doped metal oxide particles, one or more of Group IIB-VIA semiconductor materials, Group IIIA-VA semiconductor materials, and Group IB-IIIA-VIA semiconductor materials, the material of the first non-doped metal oxide particles includes one or more of ZnO, TiO2, SnO2, ZrO2, and Ta2O5, the metal oxide in the first doped metal oxide particles includes ZnO , TiO2, SnO2, ZrO2, Ta2O5, Al2O3, the doping element in the first doped metal oxide particles includes one or more of Al, Mg, Li, Mn, Y, La, Cu, Ni, Zr, Ce, In, Ga, the IIB-VIA group semiconductor material includes one or more of ZnS, ZnSe, CdS, the IIIA-VA group semiconductor material includes one or more of InP, GaP, the IB-IIIA-VIA group semiconductor material includes one or more of CuInS, CuGaS; or When the first carrier functional layer is a first electron functional layer, the second carrier functional layer is a second hole functional layer, the second inorganic semiconductor particles include one or more of second doped metal oxide particles, second undoped metal oxide particles, metal sulfides, metal selenides and metal nitrides, the metal oxide in the second doped metal oxide particles and the metal oxide in the second undoped metal oxide particles each independently include one or more of MoO3, WO3, NiO, CrO3, CuO, Cu2O, V2O5, the doping elements in the second doped metal oxide particles include one or more of Mo, W, Ni, Cr, Cu, V, the metal sulfides include one or more of CuS, MoS3, WS3, the metal selenides include one or more of MoSe3, WSe3, and the metal nitride includes P-type gallium nitride.

10. The optoelectronic device according to claim 1, wherein: The materials of the first electrode and the second electrode are independently selected from metal single substance electrodes or alloy electrodes; wherein, The material of the metal single substance electrode includes Ag, Al, Cu, Co, Cr, Fe, Ni, Mn, Ti, V, Pt, Au, Ir, Mo, Ca, Mg or Ba; The alloy electrode includes CoCrFeNiMn, AlCrFeNiCoCu, Al 0.3 CrFeNiCo、Al 20 (TiVCrMnFeCoNiCu) 80 , Au:Mg alloy or Ag:Mg alloy.

11. The optoelectronic device according to claim 5, characterized in that The material of the light-emitting layer includes one or more of an organic light-emitting material and a quantum dot light-emitting material, and the organic light-emitting material includes one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing covalent bonds of BN, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives;The quantum dot luminescent material includes one or more of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material. The material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot are independently selected from one or more of II-VI group compounds, IV-VI group compounds, III-V group compounds and I-III-VI group compounds. The II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn STe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the IV-VI group compound includes SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, One or more of PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, SnPbSTe, the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlN As, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb, the I-III-VI group compound includes one or more of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor or an organic-inorganic hybrid perovskite semiconductor, and the general structural formula of the inorganic perovskite semiconductor is AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ One or more of, X is a halogen anion, including Cl - Br - ,I - One or more of .

12. A method for preparing a photoelectric device, characterized in that: The steps include: providing a first electrode; Providing first inorganic semiconductor particles, and disposing the first inorganic semiconductor particles on the first electrode to obtain a first carrier functional layer; Preparing a second electrode on the first carrier functional layer to obtain a photoelectric device; The preparation method further includes: performing a first tritium ion beam treatment on at least one of the first electrode, the first carrier functional layer, and the second electrode.

13. The preparation method according to claim 12, characterized in that: When the first electrode is subjected to the first tritium ion beam treatment, the tritium ion energy is 15-50 keV, and the tritium ion dose is 3×10 13 ~8×10 13 ions / cm 2 , the flow rate of tritium ions is 2 to 10 sccm, and the processing time is 50 to 200 s; and / or When the second electrode is subjected to the first tritium ion beam treatment, the tritium ion energy ranges from 15 to 50 keV, and the tritium ion dose ranges from 3×10 13 ~8×10 13 ions / cm 2 , the flow rate of tritium ions is in the range of 2 to 10 sccm, and the processing time is in the range of 50 to 200 s; and / or When the first carrier functional layer is subjected to the first tritium ion beam treatment, the tritium ion energy is 10-25 keV, and the tritium ion dose is 1×10 13 ~5×10 13 ions / cm 2 , the flow rate of tritium ions is 2 to 10 sccm, and the processing time is 50 to 200 s.

14. The preparation method according to claim 12, characterized in that: The method for preparing the optoelectronic device further includes: forming a light-emitting layer on the first electrode, wherein the light-emitting layer is located between the first electrode and the first carrier functional layer; or The forming of the second electrode on the first carrier functional layer includes: forming a stacked light emitting layer and a second electrode on the first carrier functional layer.

15. The preparation method according to claim 14, characterized in that: The method for preparing the optoelectronic device further includes: forming a second carrier functional layer on the first electrode, wherein the second carrier functional layer is located between the first electrode and the light-emitting layer; or The forming of the second electrode on the first carrier functional layer includes: sequentially forming a stacked light emitting layer, a second carrier functional layer and a second electrode on the first carrier functional layer.

16. The preparation method according to claim 15, characterized in that: After forming the second carrier functional layer, the method further includes: performing a second tritium ion beam treatment on the second carrier functional layer.

17. The preparation method according to claim 16, characterized in that: When the second carrier functional layer is subjected to the second tritium ion beam treatment, the tritium ion energy is 10-25 keV, and the tritium ion dose is 1×10 13 ~5×10 13 ions / cm 2 , the flow rate of tritium ions is 2 to 10 sccm, and the processing time is 50 to 200 s.

18. The preparation method according to claim 16, characterized in that: The first carrier functional layer is a first electron functional layer, and the second carrier functional layer is a second hole functional layer; or The first carrier functional layer is a first hole functional layer, and the second carrier functional layer is a second electron functional layer.

19. The preparation method according to claim 15, characterized in that: The disposing the first inorganic semiconductor particles on the first electrode comprises: disposing the first inorganic semiconductor particles on the first electrode by atomic layer deposition, and performing tritium gas treatment during the atomic layer deposition; and / or The method for preparing the second carrier functional layer comprises: disposing the second inorganic semiconductor particles on the light-emitting layer by atomic layer deposition, and performing tritium gas treatment while performing atomic layer deposition.

20. The preparation method according to claim 19, characterized in that: The tritium gas flow rate of the tritium gas treatment is 2 to 10 sccm; and / or The number of cycles of the atomic layer deposition is 10 to 20 times; and / or The thickness of the first carrier functional layer formed by atomic layer deposition is 30 to 50 nm; and / or The thickness of the second carrier functional layer formed by atomic layer deposition is 30-50 nm.

21. A display device, characterized in that: The display device comprises the optoelectronic device according to any one of claims 1 to 11, or comprises the optoelectronic device manufactured by the manufacturing method according to any one of claims 12 to 20.

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