Display device

Abstract

Provided is a display device having high display quality. The invention provides a display device which comprises pixels, a scanning line driving circuit and a power supply circuit. The pixel includes first and second transistors in which a semiconductor layer is provided inside a first opening in an interlayer insulating layer formed on a substrate. A first conductive layer serving as a gate electrode of the first transistor has a region extending in a first direction and is electrically connected to the scan line driving circuit. A second conductive layer serving as a source electrode or a drain electrode of the second transistor is provided on the interlayer insulating layer and includes a second opening portion overlapping the first opening portion. The second conductive layer has a region extending in a second direction perpendicular to the first direction and is electrically connected to the power supply circuit. The first conductive layer and the second conductive layer have a region that overlaps with an insulating layer, which serves as a gate insulating layer of the first and second transistors, provided between the second conductive layer and the first conductive layer and between the semiconductor layer and the first conductive layer.

Description

Technical Field

[0001] One embodiment of the present invention relates to a display device, a semiconductor device, a memory device, a display module, and an electronic device. Another embodiment of the present invention relates to a method for manufacturing a display device, a method for manufacturing a semiconductor device, and a method for manufacturing a memory device.

[0002] Note that one embodiment of the present invention is not limited to the aforementioned technical field. Examples of technical fields encompassing one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), input / output devices (e.g., touch panels), and methods for driving or manufacturing these devices. Background Art

[0003] Semiconductor devices including transistors are widely used in display devices and electronic devices, and they require high integration and high speed. For example, when semiconductor devices are used in high-definition display devices, highly integrated semiconductor devices are required. As one of the methods to increase the integration density of transistors, the development of micro-transistors is underway.

[0004] In recent years, there has been a high demand for display devices that can be used for virtual reality (VR), augmented reality (AR), substitute reality (SR), or mixed reality (MR). VR, AR, SR, and MR are collectively referred to as XR (Extended Reality). In order to enhance the sense of reality and immersion, XR display devices are required to have high clarity and high color reproducibility. As devices that can be used for the above-mentioned display devices, for example, liquid crystal display devices, light-emitting devices having light-emitting elements (also called light-emitting devices) such as organic EL (Electro Luminescence) elements and light-emitting diodes (LEDs), etc.

[0005] Patent Document 1 discloses a VR display device using an organic EL element (also referred to as an organic EL device). [Prior technical literature] [Patent Document]

[0006] [Patent Document 1] International Patent Application Publication No. 2018 / 087625 Summary of the Invention Technical problem to be solved by the invention

[0007] Pixels in a display device are supplied with a power supply potential via a power supply circuit. For pixels with long wiring distances from the power supply circuit, the supplied power supply potential may drop due to wiring resistance. As a result, for example, the pixel may not emit light with the desired brightness, resulting in a decrease in the display quality of the display device.

[0008] In view of this, one of the objects of one embodiment of the present invention is to provide a display device with high display quality. In addition, one of the objects of one embodiment of the present invention is to provide a high-definition display device and a method for manufacturing the same. In addition, one of the objects of one embodiment of the present invention is to provide a display device that is driven at high speed and a method for manufacturing the same. In addition, one of the objects of one embodiment of the present invention is to provide a display device including fine transistors and a method for manufacturing the same. In addition, one of the objects of one embodiment of the present invention is to provide a display device with high on-state current and a method for manufacturing the same. In addition, one of the objects of one embodiment of the present invention is to provide a display device with good electrical characteristics and a method for manufacturing the same. In addition, one of the objects of one embodiment of the present invention is to provide a novel display device, a novel semiconductor device, a novel storage device and methods for manufacturing the same.

[0009] Note that the inclusion of these objectives does not preclude the existence of other objectives. Note that one embodiment of the present invention does not necessarily achieve all of the above objectives. Note that objectives other than the above objectives may be extracted from the description of the specification, drawings, claims, etc. Means of solving technical problems

[0010] One embodiment of the present invention is a display device including a pixel, a power supply circuit, and a scan line driver circuit, the pixel including a first transistor, a second transistor, and a first insulating layer, the first transistor including a first conductive layer, a second conductive layer, a third conductive layer, a first semiconductor layer, and a second insulating layer, the first insulating layer being provided on the first conductive layer, the first insulating layer including a first opening reaching the first conductive layer, the second conductive layer being provided on the first insulating layer, the second conductive layer including a second opening having an area overlapping with the first opening, the second conductive layer being electrically connected to the power supply circuit, and the first semiconductor layer including an area in contact with the first conductive layer and an area in contact with the second conductive layer and having an area located inside the first opening. and an area located inside the second opening, the second insulating layer is provided on the first semiconductor layer in a manner having an area located inside the first opening and an area located inside the second opening, the third conductive layer is provided in a manner having an area located inside the first opening and an area located inside the second opening and having an area opposite to the first semiconductor layer with the second insulating layer sandwiched therebetween, the second transistor includes the second insulating layer, the second semiconductor layer under the second insulating layer, and a fourth conductive layer on the second insulating layer, the fourth conductive layer has an area overlapping with the second semiconductor layer, the fourth conductive layer is electrically connected to the scan line driving circuit, and the fourth conductive layer has an area overlapping with the second conductive layer with the second insulating layer interposed therebetween.

[0011] In addition, in the above embodiment, the second transistor may also include a fifth conductive layer in contact with the second semiconductor layer, and the fifth conductive layer may also be electrically connected to the third conductive layer.

[0012] In the above embodiment, the display device may include a signal line driver circuit, the second transistor may include a sixth conductive layer in contact with the second semiconductor layer, and the sixth conductive layer may be electrically connected to the signal line driver circuit.

[0013] In addition, in the above embodiment, the pixel may include a display element, and the pixel electrode of the display element may be electrically connected to the first conductive layer.

[0014] In the above embodiment, the display device may have the following structure: the display device includes a reference potential generating circuit, the pixel includes a third transistor, the third transistor includes a seventh conductive layer, an eighth conductive layer, a ninth conductive layer, a third semiconductor layer, and a second insulating layer, the first insulating layer is provided on the seventh conductive layer, the first insulating layer includes a third opening reaching the seventh conductive layer, the seventh conductive layer is electrically connected to the reference potential generating circuit, the eighth conductive layer is provided on the first insulating layer, the eighth conductive layer includes a fourth opening having a region overlapping with the third opening, the eighth conductive layer is electrically connected to the pixel electrode, the third semiconductor layer is provided so as to have a region in contact with the seventh conductive layer and a region in contact with the eighth conductive layer, and has a region located inside the third opening and a region located inside the fourth opening, the second insulating layer is provided on the third semiconductor layer so as to have a region located inside the third opening and a region located inside the fourth opening, the ninth conductive layer is provided so as to have a region located inside the third opening and a region located inside the fourth opening, and has a region opposing the third semiconductor layer with the second insulating layer interposed therebetween, the ninth conductive layer is electrically connected to the scan line driver circuit, and the seventh conductive layer has a region overlapping with the fourth conductive layer and a region overlapping with the ninth conductive layer.

[0015] In addition, one embodiment of the present invention is a display device including a pixel, a scan line driving circuit and a power supply circuit, the pixel including a first transistor, a second transistor and a first insulating layer, the first transistor including a first conductive layer, a second conductive layer, a third conductive layer, a first semiconductor layer and a second insulating layer, the first insulating layer is arranged on the first conductive layer, the first insulating layer includes a first opening portion reaching the first conductive layer, the second conductive layer is arranged on the first insulating layer, the second conductive layer includes a second opening portion having a region overlapping with the first opening portion, the first semiconductor layer is arranged in a manner having a region in contact with the first conductive layer and a region in contact with the second conductive layer and having a region located inside the first opening portion and a region located inside the second opening portion, the second insulating layer is arranged on the first semiconductor layer in a manner having a region located inside the first opening portion and a region located inside the second opening, and the third conductive layer is arranged in a manner having a region located inside the first opening portion and a region located inside the second opening and having a region opposite to the first semiconductor layer with the second insulating layer sandwiched therebetween. The third conductive layer is electrically connected to the scan line driving circuit. The second transistor includes a fourth conductive layer, a fifth conductive layer, a sixth conductive layer, a second semiconductor layer and a second insulating layer. The first insulating layer is provided on the fourth conductive layer, the first insulating layer includes a third opening reaching the fourth conductive layer. The fifth conductive layer is provided on the first insulating layer, the fifth conductive layer includes a fourth opening having a region overlapping with the third opening. The fifth conductive layer is electrically connected to the power supply circuit. The second semiconductor layer is provided so as to have a region in contact with the fourth conductive layer and a region in contact with the fifth conductive layer and a region located inside the third opening and a region located inside the fourth opening. The second insulating layer is provided on the second semiconductor layer so as to have a region located inside the third opening and a region located inside the fourth opening. The sixth conductive layer is provided so as to have a region located inside the third opening and a region located inside the fourth opening and a region opposite to the second semiconductor layer with the second insulating layer sandwiched therebetween. The fifth conductive layer includes a region overlapping with the third conductive layer via the second insulating layer.

[0016] In the above embodiment, the display device may include a signal line driver circuit, the first conductive layer may be electrically connected to the signal line driver circuit, and the first conductive layer may have a region overlapping with the third conductive layer.

[0017] In addition, in the above embodiment, the second conductive layer may be electrically connected to the sixth conductive layer.

[0018] In addition, in the above embodiment, the pixel may include a display element, and the pixel electrode of the display element may be electrically connected to the fourth conductive layer.

[0019] In the above embodiment, the display device may have the following structure: the display device includes a reference potential generating circuit, the pixel includes a third transistor, the third transistor includes a seventh conductive layer, an eighth conductive layer, a ninth conductive layer, a third semiconductor layer, and a second insulating layer, the first insulating layer is provided on the seventh conductive layer, the first insulating layer includes a fifth opening reaching the seventh conductive layer, the seventh conductive layer is electrically connected to the reference potential generating circuit, the eighth conductive layer is provided on the first insulating layer, the eighth conductive layer includes a sixth opening having a region overlapping with the fifth opening, the eighth conductive layer is electrically connected to the pixel electrode, the third semiconductor layer is provided so as to have a region in contact with the seventh conductive layer and a region in contact with the eighth conductive layer, and has a region located inside the fifth opening and a region located inside the sixth opening, the second insulating layer is provided on the third semiconductor layer so as to have a region located inside the fifth opening and a region located inside the sixth opening, the ninth conductive layer is provided so as to have a region located inside the fifth opening and a region located inside the sixth opening, and has a region opposing the third semiconductor layer with the second insulating layer interposed therebetween, the ninth conductive layer is electrically connected to the scan line driver circuit, and the seventh conductive layer has a region overlapping with the third conductive layer and a region overlapping with the ninth conductive layer.

[0020] In the above embodiment, the first to third semiconductor layers may also include metal oxides. The metal oxides may include, for example, indium, zinc, and M (M is one or more selected from aluminum, titanium, gallium, germanium, tin, yttrium, zirconium, lanthanum, cerium, neodymium, and hafnium). Effects of the Invention

[0021] According to one embodiment of the present invention, a display device with high display quality can be provided. In addition, according to one embodiment of the present invention, a high-definition display device and a method for manufacturing the same can be provided. In addition, according to one embodiment of the present invention, a display device that can be driven at high speed and a method for manufacturing the same can be provided. In addition, according to one embodiment of the present invention, a display device including fine transistors and a method for manufacturing the same can be provided. In addition, according to one embodiment of the present invention, a display device with high on-state current and a method for manufacturing the same can be provided. In addition, according to one embodiment of the present invention, a display device with good electrical characteristics and a method for manufacturing the same can be provided. In addition, according to one embodiment of the present invention, a novel display device, a novel semiconductor device, a novel storage device and methods for manufacturing the same can be provided.

[0022] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of the above effects. Effects other than the above effects can be extracted from the description of the specification, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1A is a block diagram showing a structural example of a display device. Figure 1B is a plan view showing a structural example of a pixel. Figure 1C and Figure 1D is a circuit diagram showing a structural example of a pixel. Figure 2A is a block diagram showing a structural example of a display device. Figure 2B is a circuit diagram showing a structural example of a pixel. Figures 3A1 to 3A3 It is a plan view showing a structural example of a display device. Figure 3B is a cross-sectional view showing a structural example of a display device. Figure 4A It is a plan view showing a structural example of a display device. Figure 4B is a cross-sectional view showing a structural example of a display device. Figure 5 It is a plan view showing a structural example of a display device. Figure 6 is a cross-sectional view showing a structural example of a display device. Figure 7A and Figure 7B It is a plan view showing a structural example of a display device. Figures 8A to 8D It is a plan view showing a structural example of a display device. Figures 9A to 9C It is a plan view showing a structural example of a display device. Figure 10 is a cross-sectional view showing a structural example of a display device. Figure 11A and Figure 11B It is a plan view showing a structural example of a display device. Figure 12 It is a plan view showing a structural example of a display device. Figure 13 is a cross-sectional view showing a structural example of a display device. Figure 14 It is a plan view showing a structural example of a display device. Figure 15 is a cross-sectional view showing a structural example of a display device. 16A to 16C It is a plan view showing a structural example of a display device. 17A to 17C It is a plan view showing a structural example of a display device. Figure 18A It is a plan view showing a structural example of a display device. Figure 18B is a cross-sectional view showing a structural example of a display device. Figure 19It is a plan view showing a structural example of a display device. Figure 20A1 and Figure 20A2 It is a plan view showing a structural example of a display device. Figure 20B is a cross-sectional view showing a structural example of a display device. Figure 21A and Figure 21B It is a plan view showing a structural example of a display device. Figure 22A It is a plan view showing a structural example of a display device. Figure 22B is a cross-sectional view showing a structural example of a display device. Figure 23A and Figure 23B It is a plan view showing a structural example of a display device. Figure 24A It is a plan view showing a structural example of a display device. Figure 24B is a cross-sectional view showing a structural example of a display device. Figures 25A to 25C It is a plan view showing a structural example of a display device. Figure 26A It is a plan view showing a structural example of a display device. Figure 26B is a cross-sectional view showing a structural example of a display device. Figure 27 It is a plan view showing a structural example of a display device. Figure 28A1 and Figure 28A2 It is a plan view showing a structural example of a display device. Figure 28B is a cross-sectional view showing a structural example of a display device. Figure 29A and Figure 29B It is a plan view showing a structural example of a display device. Figure 30A It is a plan view showing a structural example of a display device. Figure 30B is a cross-sectional view showing a structural example of a display device. Figure 31A It is a plan view showing a structural example of a display device. Figure 31B is a cross-sectional view showing a structural example of a display device. Figure 32A It is a plan view showing a structural example of a display device. Figure 32B is a cross-sectional view showing a structural example of a display device. Figure 33 It is a plan view showing a structural example of a display device. Figure 34A It is a plan view showing a structural example of a display device. Figure 34Bis a cross-sectional view showing a structural example of a display device. Figure 35A It is a plan view showing a structural example of a display device. Figure 35B is a cross-sectional view showing a structural example of a display device. Figure 36 It is a plan view showing a structural example of a display device. Figure 37 It is a plan view showing a structural example of a display device. Figure 38A It is a plan view showing a structural example of a display device. Figure 38B is a cross-sectional view showing a structural example of a display device. Figure 39A It is a plan view showing a structural example of a display device. Figure 39B is a cross-sectional view showing a structural example of a display device. Figure 40A and Figure 40B It is a plan view showing a structural example of a display device. Figure 41A It is a plan view showing a structural example of a display device. Figure 41B is a cross-sectional view showing a structural example of a display device. Figure 42A It is a plan view showing a structural example of a display device. Figure 42B is a cross-sectional view showing a structural example of a display device. Figure 43 It is a plan view showing a structural example of a display device. Figure 44 It is a plan view showing a structural example of a display device. Figure 45 It is a plan view showing a structural example of a display device. Figure 46 It is a plan view showing a structural example of a display device. Figure 47 It is a plan view showing a structural example of a display device. Figure 48 It is a plan view showing a structural example of a display device. Figure 49 It is a plan view showing a structural example of a display device. Figure 50 It is a plan view showing a structural example of a display device. Figure 51 It is a plan view showing a structural example of a display device. Figure 52A It is a plan view showing a structural example of a display device. Figure 52B is a cross-sectional view showing a structural example of a display device. Figure 53 It is a plan view showing a structural example of a display device. Figure 54A It is a plan view showing a structural example of a display device. Figure 54B is a cross-sectional view showing a structural example of a display device. Figure 55 It is a plan view showing a structural example of a display device. Figure 56A It is a plan view showing a structural example of a display device. Figure 56B is a cross-sectional view showing a structural example of a display device. Figure 57 It is a plan view showing a structural example of a display device. Figure 58 It is a plan view showing a structural example of a display device. Figure 59 It is a plan view showing a structural example of a display device. Figure 60 It is a plan view showing a structural example of a display device. Figure 61 It is a plan view showing a structural example of a display device. Figure 62A It is a plan view showing a structural example of a display device. Figure 62B is a cross-sectional view showing a structural example of a display device. Figure 63 It is a plan view showing a structural example of a display device. Figure 64A It is a plan view showing a structural example of a display device. Figure 64B is a cross-sectional view showing a structural example of a display device. Figure 65 It is a plan view showing a structural example of a display device. Figure 66A It is a plan view showing a structural example of a display device. Figure 66B is a cross-sectional view showing a structural example of a display device. Figure 67 It is a plan view showing a structural example of a display device. Figure 68A It is a plan view showing a structural example of a display device. Figure 68B is a cross-sectional view showing a structural example of a display device. Figure 69 It is a plan view showing a structural example of a display device. Figure 70A It is a plan view showing a structural example of a display device. Figure 70B is a cross-sectional view showing a structural example of a display device. Figure 71It is a plan view showing a structural example of a display device. Figure 72 It is a plan view showing a structural example of a display device. Figure 73 It is a plan view showing a structural example of a display device. Figure 74A It is a plan view showing a structural example of a display device. Figure 74B is a cross-sectional view showing a structural example of a display device. Figure 75 It is a plan view showing a structural example of a display device. Figure 76 It is a plan view showing a structural example of a display device. Figure 77 It is a plan view showing a structural example of a display device. Figure 78A It is a plan view showing a structural example of a display device. Figure 78B is a cross-sectional view showing a structural example of a display device. Figure 79A It is a plan view showing a structural example of a display device. Figure 79B is a cross-sectional view showing a structural example of a display device. Figure 80 It is a plan view showing a structural example of a display device. Figure 81A It is a plan view showing a structural example of a display device. Figure 81B is a cross-sectional view showing a structural example of a display device. Figure 82 It is a plan view showing a structural example of a display device. Figure 83A It is a plan view showing a structural example of a display device. Figure 83B is a cross-sectional view showing a structural example of a display device. Figure 84 It is a plan view showing a structural example of a display device. Figure 85A It is a plan view showing a structural example of a display device. Figure 85B is a cross-sectional view showing a structural example of a display device. Figure 86 It is a plan view showing a structural example of a display device. Figure 87A It is a plan view showing a structural example of a display device. Figure 87B is a cross-sectional view showing a structural example of a display device. Figure 88 It is a plan view showing a structural example of a display device. Figure 89 It is a plan view showing a structural example of a display device. Figure 90 It is a plan view showing a structural example of a display device. Figure 91 It is a plan view showing a structural example of a display device. Figure 92 It is a plan view showing a structural example of a display device. Figure 93A It is a plan view showing a structural example of a display device. Figure 93B is a cross-sectional view showing a structural example of a display device. Figure 94 It is a plan view showing a structural example of a display device. Figure 95 It is a plan view showing a structural example of a display device. Figure 96 It is a plan view showing a structural example of a display device. Figure 97 It is a plan view showing a structural example of a display device. Figure 98 It is a plan view showing a structural example of a display device. Figure 99A It is a plan view showing a structural example of a display device. Figure 99B is a cross-sectional view showing a structural example of a display device. Figure 100 It is a plan view showing a structural example of a display device. Figure 101 It is a plan view showing a structural example of a display device. Figure 102 It is a plan view showing a structural example of a display device. Figure 103 It is a plan view showing a structural example of a display device. Figure 104 It is a plan view showing a structural example of a display device. Figures 105A to 105C is a circuit diagram showing a structural example of a pixel. Figure 106A is a block diagram showing a structural example of a storage device. Figures 106B to 106F is a circuit diagram showing a structural example of a memory cell. Figures 107A to 107C It is a plan view showing a structural example of a display device. Figure 108A It is a plan view showing a structural example of a display device. Figure 108B is a cross-sectional view showing a structural example of a display device. Figure 109A It is a plan view showing a structural example of a display device. Figure 109Bis a cross-sectional view showing a structural example of a display device. Figure 110A It is a plan view showing a structural example of a display device. Figures 110B to 110D is a cross-sectional view showing a structural example of a display device. Figure 111A and Figure 111B It is a plan view showing a structural example of a display device. Figure 112A and Figure 112B It is a plan view showing a structural example of a display device. Figure 112C is a cross-sectional view showing a structural example of a display device. Figure 113A It is a plan view showing a structural example of a display device. Figure 113B is a cross-sectional view showing a structural example of a display device. Figure 114A It is a plan view showing a structural example of a display device. Figure 114B is a cross-sectional view showing a structural example of a display device. Figure 115A It is a plan view showing a structural example of a display device. Figure 115B is a cross-sectional view showing a structural example of a display device. Figure 116A and Figure 116B It is a plan view showing a structural example of a display device. Figure 116C is a cross-sectional view showing a structural example of a display device. Figure 117A It is a plan view showing a structural example of a display device. Figure 117B is a cross-sectional view showing a structural example of a display device. Figure 118A It is a plan view showing a structural example of a display device. Figure 118B is a cross-sectional view showing a structural example of a display device. Figure 119A and Figure 119B It is a plan view showing a structural example of a display device. Figure 120A and Figure 120B It is a plan view showing a structural example of a display device. Figure 120C is a cross-sectional view showing a structural example of a display device. Figure 121A It is a plan view showing a structural example of a display device. Figure 121B and Figure 121C is a cross-sectional view showing a structural example of a display device. Figure 122A and Figure 122B is a cross-sectional view showing a structural example of a display device. Figure 123A and Figure 123B is a cross-sectional view showing a structural example of a display device. Figure 124A and Figure 124B is a cross-sectional view showing a structural example of a display device. Figure 125A It is a plan view showing a structural example of a display device. Figure 125B is a cross-sectional view showing a structural example of a display device. Figure 126A and Figure 126B It is a plan view showing a structural example of a display device. Figure 127A It is a plan view showing a structural example of a display device. Figure 127B is a cross-sectional view showing a structural example of a display device. Figures 128A to 128C It is a plan view showing a structural example of a display device. Figures 129A to 129C It is a plan view showing a structural example of a display device. Figure 130A and Figure 130B It is a plan view showing a structural example of a display device. Figure 131A It is a plan view showing a structural example of a display device. Figure 131B is a cross-sectional view showing a structural example of a display device. Figure 132A It is a plan view showing a structural example of a display device. Figure 132B is a cross-sectional view showing a structural example of a display device. Figure 133A1 and Figure 133A2 It is a plan view showing a structural example of a display device. Figure 133B is a cross-sectional view showing a structural example of a display device. Figure 134A1 and Figure 134A2 It is a plan view showing a structural example of a display device. Figure 134B is a cross-sectional view showing a structural example of a display device. Figures 135A to 135C It is a plan view showing a structural example of a display device. Figure 136A and Figure 136B It is a plan view showing a structural example of a display device. Figure 137A It is a plan view showing a structural example of a display device. Figure 137B is a cross-sectional view showing a structural example of a display device. Figure 138A and Figure 138B It is a plan view showing a structural example of a display device. Figure 138Cis a cross-sectional view showing a structural example of a display device. Figure 139A It is a plan view showing a structural example of a display device. Figure 139B is a cross-sectional view showing a structural example of a display device. Figure 140A It is a plan view showing a structural example of a display device. Figure 140B is a cross-sectional view showing a structural example of a display device. Figure 141A It is a plan view showing a structural example of a display device. Figure 141B is a cross-sectional view showing a structural example of a display device. Figures 142A to 142C It is a plan view showing a structural example of a display device. Figures 143A to 143C It is a plan view showing a structural example of a display device. Figure 144A and Figure 144B It is a plan view showing a structural example of a display device. Figure 145A It is a plan view showing a structural example of a display device. Figure 145B is a cross-sectional view showing a structural example of a display device. Figure 146A1 and Figure 146B1 It is a plan view showing an example of a method for manufacturing a display device. Figure 146A2 and Figure 146B2 is a cross-sectional view illustrating an example of a method for manufacturing a display device. Figure 147A1 and Figure 147B1 It is a plan view showing an example of a method for manufacturing a display device. Figure 147A2 and Figure 147B2 is a cross-sectional view illustrating an example of a method for manufacturing a display device. Figure 148A1 and Figure 148B1 It is a plan view showing an example of a method for manufacturing a display device. Figure 148A2 and Figure 148B2 is a cross-sectional view illustrating an example of a method for manufacturing a display device. Figure 149A1 and Figure 149B1 It is a plan view showing an example of a method for manufacturing a display device. Figure 149A2 and Figure 149B2 is a cross-sectional view illustrating an example of a method for manufacturing a display device. Figure 150A1 and Figure 150B1 It is a plan view showing an example of a method for manufacturing a display device. Figure 150A2 and Figure 150B2 is a cross-sectional view illustrating an example of a method for manufacturing a display device. Figure 151It is a perspective view showing a structural example of a display device. Figure 152 is a cross-sectional view showing a structural example of a display device. Figure 153 is a cross-sectional view showing a structural example of a display device. Figure 154 is a cross-sectional view showing a structural example of a display device. Figure 155 is a cross-sectional view showing a structural example of a display device. Figure 156 is a cross-sectional view showing a structural example of a display device. Figure 157A It is a perspective view showing a structural example of a display device. Figure 157B is a plan view showing a structural example of a touch sensor. Figure 158 is a cross-sectional view showing a structural example of a display device. Figure 159 is a cross-sectional view showing a structural example of a display device. Figures 160A to 160G is a plan view showing a structural example of a pixel. Figures 161A to 161K is a plan view showing a structural example of a pixel. Figures 162A to 162D is a diagram illustrating an example of an electronic device. Figures 163A to 163F is a diagram illustrating an example of an electronic device. Figures 164A to 164G is a diagram illustrating an example of an electronic device. Modes for Carrying Out the Invention

[0024] The embodiments are described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and those skilled in the art will readily appreciate that the embodiments and details can be modified in various ways without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited solely to the embodiments described below.

[0025] Note that in the inventive structures described below, identical reference numerals are used across different drawings to represent identical components or components having the same function, omitting repeated descriptions. Furthermore, components having the same function may be represented by the same hatching without any specific reference numerals. Furthermore, multiple layers that can be formed through the same process may be represented by the same hatching.

[0026] For ease of understanding, the positions, sizes, and ranges of various structures shown in the drawings may not necessarily represent their actual positions, sizes, and ranges. Therefore, the disclosed invention is not limited to the positions, sizes, and ranges disclosed in the drawings.

[0027] In addition, depending on the situation or state, the terms "film" and "layer" may be interchanged. For example, "conductive layer" may be replaced with "conductive film." Alternatively, "insulating film" may be replaced with "insulating layer."

[0028] In this specification, "electrode" and "wiring" do not functionally limit their components. For example, an "electrode" may be used as part of a "wiring," and vice versa. Furthermore, "electrode" or "wiring" also includes cases where multiple "electrodes" or "wirings" are formed as a single entity.

[0029] In this specification and other documents, a structure in which at least the light-emitting layers of light-emitting elements with different emission wavelengths are manufactured separately is sometimes referred to as an SBS (Side-by-Side) structure. The SBS structure allows for optimization of materials and structures for each light-emitting element, increasing the freedom of material and structure selection and facilitating improvements in brightness and reliability.

[0030] In this specification, etc., a light-emitting element includes an EL layer between a pair of electrodes. The EL layer includes at least a light-emitting layer. Here, as layers included in the EL layer (also referred to as functional layers), there can be cited a light-emitting layer, a carrier injection layer (hole injection layer and electron injection layer), a carrier transport layer (hole transport layer and electron transport layer) and a carrier blocking layer (hole blocking layer and electron blocking layer). Note that the carrier injection layer, the carrier transport layer and the carrier blocking layer are sometimes not clearly distinguishable based on their cross-sectional shape or characteristics. In addition, sometimes a layer has the functions of two or three of the carrier injection layer, the carrier transport layer and the carrier blocking layer.

[0031] In this specification and the like, a light-receiving element (also referred to as a light-receiving device) includes at least an active layer serving as a photoelectric conversion layer between a pair of electrodes.

[0032] In this specification, etc., a tapered shape refers to a shape in which at least a portion of a component's side surface is inclined relative to the substrate surface or the surface being formed. For example, it is preferable to have a region where the angle (also called a taper angle) formed between the inclined side surface and the substrate surface or the surface being formed is less than 90 degrees. Note that the side surface, substrate surface, and surface being formed of a component do not necessarily need to be completely flat; they may also be approximately planar with slight curvature or have fine irregularities.

[0033] In this specification, unless otherwise specified, when a layer has a tapered side surface, the outermost portion of the side surface of the layer is referred to as the end of the layer. For example, unless otherwise specified, when the bottom end of a layer is located outward of the top end, the bottom end of the layer is simply referred to as the end.

[0034] In this specification and other documents, for convenience, terms such as "upper," "lower," "left," and "right" are used to describe the positional relationships of components with reference to the accompanying drawings. Furthermore, the positional relationships of the components may be appropriately modified depending on the orientation in which the components are described. Therefore, the terms are not limited to those described in this specification and may be appropriately modified depending on the circumstances.

[0035] In this specification, etc., metal oxide refers to an oxide of a metal in a broad sense. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors) and oxide semiconductors (Oxide Semiconductor, or simply referred to as OS). For example, when a metal oxide is used in the semiconductor layer of a transistor, the metal oxide is sometimes referred to as an oxide semiconductor. In other words, when it is recorded as an OS transistor, it can be converted into a transistor containing a metal oxide or an oxide semiconductor. Note that metal oxides containing nitrogen are sometimes collectively referred to as metal oxides. In addition, metal oxides containing nitrogen can also be referred to as metal oxynitrides.

[0036] (Implementation 1) In this embodiment, a display device according to one embodiment of the present invention, a method for manufacturing the display device, and the like are described with reference to the drawings.

[0037] One embodiment of the present invention relates to a display device, which includes a display unit, a scan line driver circuit, a signal line driver circuit, and a power supply circuit, and pixels are arranged in a matrix in the display unit. In addition to the display element (also called a display device), a first transistor and a second transistor are provided in the pixel. The first transistor can be a transistor having a first semiconductor layer provided inside an opening in an interlayer insulating layer formed on a substrate, and the second transistor can be a transistor having a second semiconductor layer provided inside an opening different from the above-mentioned opening in an interlayer insulating layer formed on a substrate. By having such a structure, the channel length direction of the transistor can be the direction along the side of the interlayer insulating layer of the opening. Thus, the channel length is not affected by the performance of the exposure device used to manufacture the transistor, so the channel length can be set to be smaller than the limiting resolution of the exposure device.

[0038] Here, a first conductive layer disposed below the opening is used as one of the source and drain electrodes of the first transistor. Specifically, an interlayer insulating layer is provided on the first conductive layer, and an opening is provided in the interlayer insulating layer so as to reach the first conductive layer. Furthermore, a first semiconductor layer is provided within the opening so as to have a region in contact with the first conductive layer. Furthermore, a second conductive layer surrounding the outer periphery of the opening when viewed from a planar perspective is used as the other of the source and drain electrodes of the first transistor. Furthermore, a gate insulating layer is provided on the first semiconductor layer and the second conductive layer, and a third conductive layer serving as the gate electrode of the first transistor is provided on the gate insulating layer.

[0039] In this specification, a plan view may sometimes be referred to as a top view. Also, a plan view may sometimes be referred to as a top view.

[0040] The second transistor can have the same structure as the first transistor. A fourth conductive layer disposed below the opening is used as one of the source and drain electrodes of the second transistor. Furthermore, a fifth conductive layer surrounding the outer periphery of the opening when viewed from a planar perspective is used as the other of the source and drain electrodes of the second transistor. Furthermore, the gate insulating layer is also disposed on the second semiconductor layer and the fifth conductive layer, and a sixth conductive layer serving as the gate electrode of the second transistor is disposed on the gate insulating layer.

[0041] The first conductive layer or the second conductive layer is electrically connected to the signal line driver circuit. The third conductive layer has a region extending in the row direction and is electrically connected to the power supply circuit. The fifth conductive layer has a region extending in the column direction and is electrically connected to the power supply circuit. Because the third conductive layer has a region extending in the row direction and the fifth conductive layer has a region extending in the column direction, the third conductive layer and the fifth conductive layer have an overlapping region.

[0042] In the region where the third conductive layer and the fifth conductive layer overlap in the display device of one embodiment of the present invention, the gate insulating layer is provided on the fifth conductive layer, and the third conductive layer is provided thereon. Thus, for example, compared with the case where an interlayer insulating layer is included between a conductive layer electrically connected to a scan line driver circuit and a conductive layer electrically connected to a power supply circuit, the capacitance value of the parasitic capacitance formed by these conductive layers becomes larger. In this way, charge is supplied from the parasitic capacitance to the fifth conductive layer electrically connected to the power supply circuit, that is, the parasitic capacitance is used as a bypass capacitor. Therefore, for example, the voltage drop of the power supply potential generated by the power supply circuit due to wiring resistance can be suppressed. Thus, especially in pixels with a long wiring distance from the power supply circuit, for example, the pixel can be suppressed from emitting light of a desired brightness due to a drop in the potential supplied as the power supply potential. As described above, the display device of one embodiment of the present invention can be a display device with high display quality.

[0043] Here, the power supply circuit may be electrically connected to the fourth conductive layer but not to the fifth conductive layer. In this case, the fourth conductive layer has a region extending in the column direction.

[0044] When the fourth conductive layer is electrically connected to the power supply circuit, the seventh conductive layer is provided so as to have a region overlapping with the fourth conductive layer. Specifically, the seventh conductive layer has a region extending in the column direction and having a region overlapping with the region of the fourth conductive layer extending in the column direction.

[0045] The seventh conductive layer is provided in the same layer as the fifth conductive layer, that is, between the interlayer insulating layer and the gate insulating layer. The interlayer insulating layer includes an opening that reaches the fourth conductive layer, and the fourth conductive layer and the seventh conductive layer are electrically connected within the opening. The power supply circuit is electrically connected to the fourth conductive layer, and the fourth conductive layer is electrically connected to the seventh conductive layer, thereby electrically connecting the fourth and seventh conductive layers to the power supply circuit. As described above, in addition to the fourth conductive layer, the seventh conductive layer provided in a layer different from the fourth conductive layer can also be used as wiring for electrically connecting the power supply circuit to the pixel.

[0046] As described above, by electrically connecting multiple conductive layers provided in different layers to the power circuit, the wiring resistance from the power circuit to the pixel can be reduced. Consequently, the voltage drop of the power supply potential generated by the power circuit can be suppressed. Thus, particularly in pixels with a long wiring distance from the power circuit, the pixel can be prevented from emitting light of the desired brightness due to a drop in the potential supplied as the power supply potential. As described above, a display device according to one embodiment of the present invention can be a display device with high display quality.

[0047] <Configuration Example of Display Device> Figure 1A This is a block diagram illustrating an example configuration of a display device 10, which is one embodiment of the present invention. The display device 10 includes a display unit 20, a scan line driver circuit 11, a signal line driver circuit 13, and a power supply circuit 15. The display unit 20 includes a plurality of pixels 21 arranged in a matrix. Alternatively, the power supply circuit 15 may be provided externally to the display device 10.

[0048] The scanning line driving circuit 11 is electrically connected to the pixels 21 via wirings 41. The wirings 41 extend in the row direction of the matrix, for example.

[0049] The signal line driving circuit 13 is electrically connected to the pixels 21 via wirings 43. The wirings 43 extend in the column direction of the matrix, for example.

[0050] The power supply circuit 15 is electrically connected to the pixels 21 via the wiring 45. For example, all the pixels 21 may be electrically connected to the power supply circuit 15 via the same wiring 45.

[0051] exist Figure 1A In the figure, wiring 41 and wiring 43 are represented by straight lines. However, a straight line is not limited to a single wiring line; multiple wiring lines may be represented by a single line. In the following block diagrams and circuit diagrams, multiple wiring lines may also be represented by a single line. Furthermore, wiring lines other than wiring 41 and wiring 43 may also be represented by a single line.

[0052] The pixel 21 includes a display element, and the display element can display an image on the display unit 20. As the display element, for example, a light-emitting element can be used, specifically, an organic EL element can be used. Alternatively, a liquid crystal element (also called a liquid crystal device) can be used as the display element.

[0053] The scan line driver circuit 11 has, for example, a function of selecting pixels 21 for which image data is to be written, row by row. Specifically, the scan line driver circuit 11 can select pixels 21 for which image data is to be written by outputting a signal to the wiring 41. Here, for example, the scan line driver circuit 11 can output the signal to the wiring 41 of the first row, then to the wiring 41 of the second row, and then to the wiring 41 of the last row, thereby selecting all pixels 21. Therefore, the signal output by the scan line driver circuit 11 to the wiring 41 is a scan signal, and the wiring 41 can be said to be a scan line.

[0054] The signal line driver circuit 13 has the function of generating image data. The image data is supplied to the pixels 21 via the wiring 43. For example, the image data can be written to all pixels 21 included in the row selected by the scan line driver circuit 11. Here, the image data can be expressed as a signal (image signal). Therefore, the wiring 43 can be said to be a signal line.

[0055] The power supply circuit 15 has the function of generating a power supply potential and supplying it to the wiring 45. For example, the power supply circuit 15 has the function of generating a high power supply potential (hereinafter referred to as "high potential" or "VDD") and supplying it to the wiring 45. Alternatively, the power supply circuit 15 may have the function of generating a low power supply potential (hereinafter referred to as "low potential" or "VSS"). Since the power supply potential is supplied to the wiring 45, the wiring 45 can be said to be a power supply line.

[0056] Wiring 41 and wiring 45 have an overlapping area with an insulating layer interposed therebetween. Thus, parasitic capacitance 25 is formed between wiring 41 and wiring 45. The charge accumulated in parasitic capacitance 25 can be supplied to wiring 45. Therefore, parasitic capacitance 25 can be used as a bypass capacitor. The thinner the insulating layer between wiring 41 and wiring 45, the greater the capacitance value of parasitic capacitance 25.

[0057] The greater the capacitance of parasitic capacitance 25, the greater the amount of charge that can be supplied to wiring 45. Therefore, the greater the capacitance of parasitic capacitance 25, the more effectively it can suppress voltage drops in the power supply potential generated by power supply circuit 15, for example, due to wiring resistance. Consequently, in particular, in pixels 21 with long wiring distances from power supply circuit 15, it is possible to effectively suppress, for example, the inability of pixels 21 to emit light of desired brightness due to drops in the potential supplied as the power supply potential. As described above, display device 10 can achieve high display quality.

[0058] Figure 1B 2 is a plan view showing a structural example of a pixel 21. The pixel 21 may include a plurality of sub-pixels 23. Figure 1B 23B. Here, in the case where the pixel 21 includes a light-emitting element as a display element, for example Figure 1B The planar shape of the sub-pixel shown corresponds to the planar shape of the light-emitting region of the light-emitting element. Figure 1B The aperture ratios (also known as the size or the size of the light-emitting area) of sub-pixel 23R, sub-pixel 23G, and sub-pixel 23B are equal or approximately equal, but one embodiment of the present invention is not limited to this. The aperture ratios of sub-pixel 23R, sub-pixel 23G, and sub-pixel 23B can be appropriately determined. The aperture ratios of sub-pixel 23R, sub-pixel 23G, and sub-pixel 23B can be different from each other, or two or more of them can be equal or approximately equal.

[0059] In this specification, for example, when describing common features among sub-pixel 23R, sub-pixel 23G, and sub-pixel 23B, the letters distinguishing these may be omitted and referred to as sub-pixel 23. When describing common features among other components distinguished by letters, the symbols may be omitted and the letters may be used for the description.

[0060] exist Figure 1B In the illustrated pixel 21, a stripe arrangement is employed as the arrangement method for the sub-pixels 23. Alternatively, an S-striped arrangement, a matrix arrangement, a Delta arrangement, a Bayer arrangement, a Pentile arrangement, or the like may be employed as the arrangement method for the sub-pixels 23. For an example of a planar shape of the sub-pixels and the arrangement of the sub-pixels, see Embodiment 4.

[0061] Sub-pixels 23R, sub-pixels 23G, and sub-pixels 23B emit light of different colors. As sub-pixels 23R, sub-pixels 23G, and sub-pixels 23B, there can be cited sub-pixels of three colors of red (R), green (G), and blue (B), sub-pixels of three colors of yellow (Y), cyan (C), and magenta (M), etc. In addition, more than four sub-pixels 23 may be provided in the pixel 21. For example, sub-pixels of four colors of R, G, B, and white (W) may be provided in the pixel 21. Thus, by including a plurality of sub-pixels 23 that emit light of different colors in the pixel 21 in the display device 10, a full-color image can be displayed on the display unit 20. In addition, in the pixel 21, for example, sub-pixels of R, G, B, and infrared light (IR) may be provided.

[0062] Furthermore, the display unit 20 may be provided with a sensor, for example, a sensor may be provided in the pixel 21. For example, the display unit 20 may also function as a fingerprint sensor. For example, the display unit 20 may also function as an optical or ultrasonic fingerprint sensor.

[0063] Figure 1C is a circuit diagram showing a structural example of the sub-pixel 23 . Figure 1C The sub-pixel 23 shown includes a pixel circuit 40A and a light-emitting element 60 .

[0064] The pixel circuit 40A includes a transistor 51, a transistor 52, and a capacitor 57. That is, the pixel circuit 40A is a 2Tr (transistor) 1C (capacitor) type pixel circuit.

[0065] In the pixel circuit 40A, one of the source and drain of the transistor 51 is electrically connected to the wiring 43. The other of the source and drain of the transistor 51 is electrically connected to the gate of the transistor 52. The gate of the transistor 52 is electrically connected to one electrode of the capacitor 57. The gate of the transistor 51 is electrically connected to the wiring 41.

[0066] One of the source and drain of transistor 52 is electrically connected to wiring 45. The other of the source and drain of transistor 52 is electrically connected to the other electrode of capacitor 57. The other electrode of capacitor 57 is electrically connected to one electrode of light-emitting element 60. The other electrode of light-emitting element 60 is electrically connected to wiring 47. Here, one electrode of light-emitting element 60 is referred to as a pixel electrode. Alternatively, for example, wiring 47 may be shared by all sub-pixels 23. Thus, the other electrode of light-emitting element 60 may be referred to as a common electrode.

[0067] As described above, wiring 41 functions as a scan line, wiring 43 functions as a signal line, and wiring 45 functions as a power supply line. Furthermore, wiring 47 functions as a power supply line. For example, when wiring 45 is supplied with a high power supply potential, wiring 47 is supplied with a low power supply potential. Wiring 47 can be electrically connected to power supply circuit 15, for example.

[0068] Transistor 51 functions as a switch and is also referred to as a select transistor. Transistor 51 controls the conduction state and non-conduction state between wiring 43 and the gate of transistor 52 according to the potential of wiring 41. When transistor 51 is turned on, image data is written to pixel circuit 40A, and when transistor 51 is turned off, the written image data is retained.

[0069] Transistor 52 controls the amount of current flowing through light-emitting element 60 and is also referred to as a drive transistor. Capacitor 57 maintains the gate potential of transistor 52. The brightness of light-emitting element 60 is controlled by the potential supplied to the gate of transistor 52 according to image data. Specifically, when a high power supply potential is supplied to wiring 45 and a low power supply potential is supplied to wiring 47, the amount of current flowing from wiring 45 to wiring 47 is controlled by the gate potential of transistor 52. This controls the brightness of light-emitting element 60.

[0070] OS transistors are preferably used as transistors 51 and 52. For example, OS transistors have higher field effect mobility than transistors using amorphous silicon. Therefore, by using OS transistors as transistors 51 and 52, the display device 10 can be driven at high speed.

[0071] Furthermore, the leakage current between the source and drain of the OS transistor in the off state (also known as the off-state current) is significantly small. Thus, by using an OS transistor as transistor 51, the charge stored in capacitor 57 can be retained for a long period of time. Therefore, the image data written to the sub-pixel 23 can be retained for a long period of time, thereby reducing the frequency of refresh operations (rewriting image data to the sub-pixel 23). This can reduce the power consumption of the display device 10.

[0072] To increase the brightness of light-emitting element 60, the current flowing through it needs to be increased. To achieve this, the source-drain voltage of transistor 52, the driver transistor, needs to be increased. Because the source-drain withstand voltage of an OS transistor is higher than that of a silicon transistor (also known as a Si transistor), a high voltage can be applied to the source-drain of the OS transistor. Therefore, by using an OS transistor as transistor 52, the current flowing through light-emitting element 60 can be increased, thereby improving the brightness of light-emitting element 60.

[0073] Compared to Si transistors, OS transistors can minimize changes in source-drain current in response to changes in gate-source voltage. Therefore, by using an OS transistor as transistor 52, the current flowing through the source-drain can be precisely determined based on changes in gate-source voltage. This allows for precise control of the current flowing through light-emitting element 60. Consequently, the brightness of light emitted by sub-pixel 23 can be precisely controlled. This increases the number of grayscale levels that sub-pixel 23 can display.

[0074] Regarding the saturation characteristics of the current flowing when the transistor is driven in the saturation region, compared to Si transistors, OS transistors can flow a stable current (saturation current) even when the source-drain voltage is gradually increased. Therefore, by using an OS transistor as transistor 52, for example, even if the current-voltage characteristics of light-emitting element 60 vary from light-emitting element 60 to light-emitting element 60, a stable current can flow through light-emitting element 60. In other words, when the OS transistor is driven in the saturation region, even if the source-drain voltage is increased, the source-drain current remains almost unchanged, thereby stabilizing the light emission brightness of light-emitting element 60.

[0075] As described above, by using an OS transistor as the transistor 52 , “suppression of black blurring,” “increase in luminance,” “multi-gradation,” and “suppression of uneven luminance of each light-emitting element 60 ” can be achieved.

[0076] Note that in Figure 1C Although transistors 51 and 52 are n-channel transistors, one or both of transistors 51 and 52 may be p-channel transistors. The same applies to other transistors described in this specification and the like.

[0077] As the light-emitting element 60, for example, an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode) is preferably used. Examples of the light-emitting substance contained in the light-emitting element 60 include substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), substances that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials), and inorganic compounds (such as quantum dot materials). In addition, LEDs such as micro LEDs (Light Emitting Diodes) can also be used as the light-emitting element 60.

[0078] Figure 1D is a circuit diagram showing a structural example of the sub-pixel 23 . Figure 1D The sub-pixel 23 shown includes a pixel circuit 40B and a liquid crystal element 69 .

[0079] The pixel circuit 40B includes a transistor 51 and a capacitor 57. That is, the pixel circuit 40B is a 1Tr1C type pixel circuit.

[0080] In pixel circuit 40B, one of the source and drain of transistor 51 is electrically connected to wiring 43. The other of the source and drain of transistor 51 is electrically connected to one electrode of capacitor 57. One electrode of capacitor 57 is electrically connected to one electrode of liquid crystal element 69. The gate of transistor 51 is electrically connected to wiring 41. The other electrode of capacitor 57 and the other electrode of liquid crystal element 69 are electrically connected to wiring 45. Here, one electrode of liquid crystal element 69 is also referred to as a pixel electrode. In addition, the other electrode of liquid crystal element 69 is sometimes referred to as a common electrode. In addition, in pixel circuit 40B, for example, wiring 45 is supplied with a ground potential.

[0081] In the pixel circuit 40B, the transistor 51 functions as a switch, and has a function of controlling the conductive state or non-conductive state between the wiring 43 and one electrode of the liquid crystal element 69 according to the potential of the wiring 41. When the transistor 51 is turned on, image data is written to the pixel circuit 40B, and when the transistor 51 is turned off, the written image data is retained.

[0082] The capacitor 57 has a function of holding the potential of one electrode of the liquid crystal element 69. The alignment state of liquid crystal molecules included in the liquid crystal element 69 is controlled by the potential corresponding to image data supplied to the one electrode of the liquid crystal element 69.

[0083] As the mode of the liquid crystal element 69, for example, the following modes can be used: TN (Twisted Nematic) mode; STN (Super-Twisted Nematic) mode; VA (Vertical Alignment) mode; ASM (Axially Symmetric Aligned Micro-cell) mode; OCB (Optically Compensated Birefringence) mode; FLC (Ferroelectric Liquid Crystal) mode; AFLC (AntiFerroelectric Liquid Crystal) mode; MVA (Multidomain Vertical Alignment) mode; PVA (Patterned Vertical Alignment) mode; IPS (In Plane Switching) mode; FFS (Fringe Field Switching) mode; or TBA (Transverse Bend Alignment) mode, etc. Other examples include ECB (Electrically Controlled Birefringence) mode, PDLC (Polymer Dispersed Liquid Crystal) mode, PNLC (Polymer Network Liquid Crystal) mode, and guest-host mode. Note that the present invention is not limited to these, and various modes can be used.

[0084] Figure 2A is a block diagram showing a configuration example of the display device 10, and Figure 1A A modified example of the display device 10 is shown. Figure 2A The display device 10 shown is Figure 1A The display device 10 shown differs in that: Figure 2A The display device 10 shown includes a wiring 41a and a wiring 41b as wiring 41, and a reference potential generating circuit 17. Figure 2A In the illustrated example, parasitic capacitance 25 is formed between the wiring 41 a and the wiring 45 and between the wiring 41 b and the wiring 45 .

[0085] The reference potential generating circuit 17 is electrically connected to the pixel 21 via the wiring 48. For example, all pixels 21 can be electrically connected to the reference potential generating circuit 17 via the same wiring 48. For example, the reference potential generating circuit 17 has a function of generating a reference potential for correcting the uneven gate-source potential of each transistor 52 and supplying it to the wiring 48. The potential of the wiring 48 becomes the reference potential, and thus the wiring 48 can be called a reference potential line. In addition, the reference potential generating circuit 17 can also be called a power supply circuit. In addition, the power supply circuit 15 and the reference potential generating circuit 17 can also be combined to form a single circuit. For example, the power supply circuit 15 can also include the reference potential generating circuit 17.

[0086] Figure 2B It shows Figure 2A 1 is a circuit diagram showing a structural example of a sub-pixel 23 included in a pixel 21 shown. Figure 2B The sub-pixel 23 shown includes a pixel circuit 40C and a light-emitting element 60. The pixel circuit 40C has a structure in which a transistor 53 is added to the pixel circuit 40A. The pixel circuit 40C is a 3Tr1C type pixel circuit.

[0087] In pixel circuit 40C, the gate of transistor 51 is electrically connected to wiring 41 a. One of the source and drain of transistor 53 is electrically connected to the other of the source and drain of transistor 52, the other electrode of capacitor 57, and one electrode of light-emitting element 60. The other of the source and drain of transistor 53 is electrically connected to wiring 48. The gate of transistor 53 is electrically connected to wiring 41 b.

[0088] Transistor 53 functions as a switch, controlling the conductive state and non-conductive state between wiring 48 and one electrode of light-emitting element 60 according to the potential of wiring 41b. For example, a reference potential is supplied to wiring 48. The reference potential of wiring 48 supplied by transistor 53 suppresses variations in gate-source potential among transistors 52.

[0089] In addition, a current value that can be used for setting pixel parameters can be obtained based on the current value of the wiring 48. More specifically, the wiring 48 can be used as a monitoring line that outputs the current flowing through the transistor 52 or the current flowing through the light-emitting element 60 to the outside of the pixel 21. The current output to the wiring 48 can be converted into a potential by, for example, a source follower circuit. Or, for example, it can be converted into a digital signal by an AD converter. Note that in the case where the wiring 48 is used as a monitoring line, the display device 10 does not need to include the reference potential generating circuit 17. In addition, in the case where the wiring 48 is used as a monitoring line, the pixel 21 can be electrically connected to different wirings 48 in columns.

[0090] An OS transistor is preferably used as the transistor 53. As described above, an OS transistor has a higher field effect mobility than a transistor using amorphous silicon, for example. Therefore, by using an OS transistor as the transistor 53, the display device 10 can be driven at high speed.

[0091] <Structural Example of Semiconductor Device> Figure 3A1 is a plan view showing a structural example of a semiconductor device included in a display device according to one embodiment of the present invention. Specifically, Figure 3A1 1 is a plan view showing a structural example of a transistor 50 and its periphery included in the display device. Figure 3B yes Figure 3A1 The cross-section of the dotted line A1-A2 is shown. Figure 3A1 In the diagram, for example, a portion of the components of the transistor 50, such as an insulating layer, is omitted. Regarding the plan view of the transistor, a portion of the components such as the insulating layer is also omitted in the subsequent drawings.

[0092] For example, the transistor 50 can be used as a transistor included in the pixel 21. For example, the transistor 50 can be used as the transistors 51 to 54 and the transistors 61 to 66. In addition, the transistor 50 can also be used as at least part of the transistors included in the scan line driver circuit 11, the transistors included in the signal line driver circuit 13, the transistors included in the power supply circuit 15, and the transistors included in the reference potential generating circuit 17.

[0093] The transistor 50 is disposed on the substrate 101 and includes a conductive layer 111 , a conductive layer 112 , a semiconductor layer 113 , an insulating layer 105 , and a conductive layer 115 . Figure 3A1 An example is shown in which the conductive layer 112 extends in a direction parallel to the conductive layer 111 and in a direction perpendicular to the conductive layer 115 .

[0094] exist Figure 3A1 and Figure 3B In the figure, as shown by the coordinate axis, the extending direction of the conductive layer 112 is the X direction. In addition, the direction perpendicular to the X direction and parallel to the top surface of the substrate 101 (also referred to as the surface of the substrate 101) is the Y direction, and the direction perpendicular to the top surface of the substrate 101 is the Z direction. The definitions of the X direction, Y direction, and Z direction are also shown by the coordinate axis in the following figures. Figure 3A1 and Figure 3B The definitions in the text may be the same or different. Note that in any definition, the X direction, the Y direction, and the Z direction may be mutually perpendicular. In addition, the X direction and the Y direction may be parallel to the top surface of the substrate (also referred to as the surface of the substrate), and the Z direction may be perpendicular to the top surface of the substrate.

[0095] The conductive layer 111 serves as one of a source electrode and a drain electrode of the transistor 50. The conductive layer 112 serves as the other of the source electrode and the drain electrode of the transistor 50. The insulating layer 105 serves as a gate insulating layer of the transistor 50. The conductive layer 115 serves as a gate electrode of the transistor 50.

[0096] In the semiconductor layer 113, the entire region overlapping the gate electrode with the gate insulating layer interposed therebetween serves as a channel formation region. Furthermore, in the semiconductor layer 113, the region in contact with the source electrode serves as a source region, and the region in contact with the drain electrode serves as a drain region.

[0097] A conductive layer 111 is provided over the substrate 101, an insulating layer 103 is provided over the substrate 101 and the conductive layer 111, and a conductive layer 112 is provided over the insulating layer 103. The insulating layer 103 can function as an interlayer insulating layer. The conductive layer 111 and the conductive layer 112 have a region that overlaps with each other with the insulating layer 103 interposed therebetween. The insulating layer 103 serving as the interlayer insulating layer can be thicker than the insulating layer 105 serving as the gate insulating layer of the transistor 50.

[0098] Insulating layer 103 includes opening 121 that reaches conductive layer 111. Conductive layer 112 includes opening 123 that reaches opening 121. That is, opening 123 has a region that overlaps with opening 121. Furthermore, opening 123 also has a region that overlaps with conductive layer 111. It is preferable that conductive layer 112 is not disposed within opening 121. In other words, conductive layer 112 preferably does not contact the side surface of insulating layer 103 on the side of opening 121.

[0099] Figure 3A1 As components of the transistor 50, a conductive layer 111, a conductive layer 112, a semiconductor layer 113, a conductive layer 115, an opening 121, and an opening 123 are shown. Figure 3A2 It is omitted Figure 3A1 The structure example of the conductive layer 115 in the components shown. That is, Figure 3A2 The conductive layer 111, the conductive layer 112, the semiconductor layer 113, the opening 121, and the opening 123 are shown. Figure 3A3 Yes, it is omitted Figure 3A2 The structure example of the semiconductor layer 113 among the components shown. That is, Figure 3A3 Conductive layer 111 , conductive layer 112 , opening 121 , and opening 123 are shown.

[0100] like Figure 3A3 and Figure 3B As shown, the conductive layer 112 includes an opening 123 in a region overlapping with the conductive layer 111. Figure 3A3As shown, the conductive layer 112 may have a structure that covers the entire periphery of the opening 121 when viewed from a planar perspective. However, the conductive layer 112 is preferably not provided inside the opening 121. In other words, the conductive layer 112 is preferably not in contact with the side surface of the insulating layer 103 on the side of the opening 121.

[0101] Figure 3A1 、 Figure 3A2 and Figure 3A3 The example shown here shows openings 121 and 123 both having circular shapes when viewed from above. By making openings 121 and 123 circular in plan view, the processing accuracy during the formation of openings 121 and 123 can be improved, allowing for the formation of fine openings 121 and 123. Note that in this specification, circularity is not limited to a perfect circle. Alternatively, the plan view of openings 121 and 123 may be, for example, elliptical.

[0102] Figure 3B An example is shown in which the end of the conductive layer 112 on the side of the opening 123 is aligned with or approximately aligned with the end of the insulating layer 103 on the side of the opening 121. The planar shape of the opening 123 can also be said to be aligned with or approximately aligned with the planar shape of the opening 121. Note that in this specification, etc., the end of the conductive layer 112 on the side of the opening 123 and the end of the opening 123 refer to the bottom end of the conductive layer 112 on the side of the opening 123. The bottom surface of the conductive layer 112 refers to the surface on the side of the insulating layer 103. The end of the insulating layer 103 on the side of the opening 121 and the end of the opening 121 refer to the top end of the insulating layer 103 on the side of the opening 121. The top surface of the insulating layer 103 refers to the surface on the side of the conductive layer 112. In addition, the planar shape of the opening 123 refers to the planar shape of the bottom end of the conductive layer 112 on the side of the opening 123. The planar shape of the opening 121 refers to the planar shape of the top surface end portion of the insulating layer 103 on the opening 121 side.

[0103] Note that "ends that are consistent or roughly consistent" can also be said to be aligned or roughly aligned. When the ends are aligned or roughly aligned, and when the planar shapes are consistent or roughly consistent, it can be said that at least a portion of their outlines overlap between the stacked layers when viewed from a planar perspective. This includes, for example, cases where the upper and lower layers are processed using the same mask pattern, or a portion of the same mask pattern. However, strictly speaking, sometimes the outlines do not overlap, and the upper layer is located inside the lower layer, or the upper layer is located outside the lower layer. In this case, the ends can also be said to be roughly aligned or the planar shapes are roughly consistent.

[0104] The opening 121 can be formed, for example, using a resist mask for forming the opening 123. Specifically, first, the conductive layer 111 is formed on the substrate 101. Then, the insulating layer 103, a conductive film (which will become the conductive layer 112 in a later step) on the insulating layer 103, and a resist mask are formed on the conductive film. The opening 123 is then formed in the conductive film using the resist mask. The opening 121 is then formed in the insulating layer 103 using the resist mask. This allows the ends of the opening 121 to be aligned or substantially aligned with the ends of the opening 123. This structure simplifies the process.

[0105] Semiconductor layer 113 is provided so as to cover openings 121 and 123 and to include regions located within openings 121 and 123. Semiconductor layer 113 has a shape that conforms to the top and side surfaces of conductive layer 112, the side surfaces of insulating layer 103, and the top surface of conductive layer 111. For example, semiconductor layer 113 includes a region that is in contact with the top and side surfaces of conductive layer 112, the side surfaces of insulating layer 103, and the top surface of conductive layer 111.

[0106] The semiconductor layer 113 preferably covers the end portion of the conductive layer 112 on the side of the opening 123. For example, Figure 3B The structure shown is that the end portion of the semiconductor layer 113 is located on the conductive layer 112. In other words, the end portion of the semiconductor layer 113 is in contact with the top surface of the conductive layer 112.

[0107] For example, in Figure 3B In the embodiment, the semiconductor layer 113 has a single-layer structure, but one embodiment of the present invention is not limited thereto. The semiconductor layer 113 may have a stacked-layer structure of two or more layers.

[0108] The insulating layer 105 serving as the gate insulating layer of the transistor 50 is provided so as to cover the openings 121 and 123 and include regions located inside the openings 121 and 123. The insulating layer 105 is provided over the semiconductor layer 113, the conductive layer 112, and the insulating layer 103. The insulating layer 105 may include regions in contact with the top surface and side surfaces of the semiconductor layer 113, the top surface and side surfaces of the conductive layer 112, and the top surface of the insulating layer 103. The insulating layer 105 has a shape that follows the shapes of the top surface of the insulating layer 103, the top surface and side surfaces of the conductive layer 112, and the top surface and side surfaces of the semiconductor layer 113.

[0109] The conductive layer 115 functioning as a gate electrode of the transistor 50 is provided over the insulating layer 105 and can have a region in contact with a top surface of the insulating layer 105. The conductive layer 115 has a region overlapping with the semiconductor layer 113 with the insulating layer 105 interposed therebetween.

[0110] For example, Figure 3B As shown, the conductive layer 115 is provided so as to have a region located inside the opening 121 and a region located inside the opening 123 and a region facing the semiconductor layer 113 with the insulating layer 105 interposed therebetween. Figure 3B In the example shown, the conductive layer 115 has a region that overlaps with the conductive layer 111 and the conductive layer 112 via the insulating layer 105 and the semiconductor layer 113. Furthermore, the conductive layer 115 covers the entire semiconductor layer 113. This structure allows a gate electric field to be applied to the entire semiconductor layer 113, thereby improving the electrical characteristics of the transistor 50, for example, increasing the on-state current of the transistor. Furthermore, by providing the insulating layer 103 between the conductive layer 111 and the conductive layer 115 in addition to the insulating layer 105 serving as a gate insulating layer, for example, the parasitic capacitance formed by the conductive layer 111 and the conductive layer 115 is reduced compared to a case where the insulating layer 103 is the only insulating layer provided between the conductive layer 111 and the conductive layer 115.

[0111] Transistor 50 is a so-called top-gate transistor having a gate electrode above semiconductor layer 113. Since the bottom surface of semiconductor layer 113 has regions in contact with the source and drain electrodes, it can be said to be a TGBC (Top Gate Bottom Contact) transistor.

[0112] Here, refer to Figure 4A and Figure 4B The channel length and channel width of the transistor 50 will be described. Figure 4A It shows Figure 3A1 An enlarged plan view of a structural example of the transistor 50 and its surroundings in FIG. Figure 4B yes Figure 4A A cross-sectional view along the dotted line A1-A2 in FIG.

[0113] In the semiconductor layer 113, the area in contact with the conductive layer 111 is used as one of the source region and the drain region, the area in contact with the conductive layer 112 is used as the other of the source region and the drain region, and the area between the source region and the drain region is used as a channel formation region.

[0114] The channel length of transistor 50 is the distance between the source region and the drain region. Figure 4B The dotted double arrow in FIG. 5 represents a channel length L50 of the transistor 50. The channel length L50 is the distance between the end of the region where the semiconductor layer 113 contacts the conductive layer 111 and the end of the region where the semiconductor layer 113 contacts the conductive layer 112 when viewed in cross section.

[0115] Here, the channel length L50 of transistor 50 corresponds to the length of the side surface of insulating layer 103 on the side of opening 121 when viewed from the XZ plane. Specifically, channel length L50 is determined by the thickness T103 of insulating layer 103 and the angle θ103 formed between the side surface of insulating layer 103 on the side of opening 121 and the surface on which insulating layer 103 is formed (here, the top surface of conductive layer 111). It is not affected by the performance of the exposure equipment used to manufacture the transistor. Therefore, channel length L50 can be set to be smaller than the limiting resolution of the exposure equipment, enabling the realization of a fine transistor. For example, the channel length L50 is preferably 0.01 μm or more and less than 3.0 μm, more preferably 0.05 μm or more and less than 3.0 μm, more preferably 0.10 μm or more and less than 3.0 μm, more preferably 0.15 μm or more and less than 3.0 μm, more preferably 0.20 μm or more and less than 3.0 μm, more preferably 0.20 μm or more and less than 2.5 μm, more preferably 0.20 μm or more and less than 2.0 μm, more preferably 0.20 μm or more and less than 1.5 μm, more preferably 0.30 μm or more and less than 1.5 μm, more preferably 0.30 μm or more and 1.2 μm or less, more preferably 0.40 μm or more and 1.2 μm or less, more preferably 0.40 μm or more and 1.0 μm or less, more preferably 0.50 μm or more and 1.0 μm or less. Figure 4B In FIG. 1 , the thickness T103 of the insulating layer 103 is indicated by a double-dot chain arrow.

[0116] By reducing the channel length L50, it is possible to increase the on-state current of the transistor 50. Therefore, by using the transistor 50 as a transistor included in the display device 10, for example, a transistor included in the pixel 21, the display device 10 can be driven at high speed.

[0117] By adjusting the thickness T103 and the angle θ103 of the insulating layer 103 , the channel length L50 can be controlled.

[0118] The thickness T103 of the insulating layer 103 is preferably greater than or equal to 0.01 μm and less than 3.0 μm, more preferably greater than or equal to 0.05 μm and less than 3.0 μm, more preferably greater than or equal to 0.10 μm and less than 3.0 μm, more preferably greater than or equal to 0.15 μm and less than 3.0 μm, more preferably greater than or equal to 0.20 μm and less than 3.0 μm, more preferably greater than or equal to 0.20 μm and less than 2.5 μm, more preferably greater than or equal to 0.20 μm and less than 2.0 μm, more preferably greater than or equal to 0.20 μm and less than 1.5 μm, more preferably greater than or equal to 0.30 μm and less than 1.5 μm, more preferably greater than or equal to 0.30 μm and less than 1.2 μm, more preferably greater than or equal to 0.40 μm and less than 1.2 μm, more preferably greater than or equal to 0.40 μm and less than 1.0 μm, more preferably greater than or equal to 0.50 μm and less than 1.0 μm.

[0119] The side surface of the insulating layer 103 on the side of the opening 121 preferably has a tapered shape. The angle θ103 formed between the side surface of the insulating layer 103 on the side of the opening 121 and the surface on which the insulating layer 103 is formed (here, the top surface of the conductive layer 111) is preferably less than 90 degrees. By reducing the angle θ103, coverage with layers disposed on the insulating layer 103 (e.g., the semiconductor layer 113) can be improved. However, reducing the angle θ103 may reduce the contact area between the semiconductor layer 113 and the conductive layer 111, thereby increasing the contact resistance between the semiconductor layer 113 and the conductive layer 111. The angle θ103 is preferably greater than or equal to 45 degrees and less than 90 degrees, more preferably greater than or equal to 50 degrees and less than 90 degrees, more preferably greater than or equal to 55 degrees and less than 90 degrees, more preferably greater than or equal to 60 degrees and less than 90 degrees, more preferably greater than or equal to 60 degrees and less than or equal to 85 degrees, more preferably greater than or equal to 65 degrees and less than or equal to 85 degrees, more preferably greater than or equal to 65 degrees and less than or equal to 80 degrees, and more preferably greater than or equal to 70 degrees and less than or equal to 80 degrees. By setting the angle θ103 within the above range, the channel length of the transistor 50 can be shortened while improving the coverage of layers (e.g., the semiconductor layer 113) formed on the conductive layer 111 and the insulating layer 103, thereby suppressing defects such as disconnections or voids in the layers. In addition, the contact resistance between the semiconductor layer 113 and the conductive layer 111 can be reduced.

[0120] In this specification and the like, disconnection refers to a phenomenon in which a layer, a film, or an electrode is disconnected or separated due to the shape of the surface on which it is formed (for example, a step, etc.).

[0121] Note that, for example, Figure 4B 1 shows a configuration in which the side surface of the insulating layer 103 on the side of the opening 121 is a straight line when viewed in cross section, but one embodiment of the present invention is not limited thereto. The side surface of the insulating layer 103 on the side of the opening 121 may also be a curved line when viewed in cross section, or may include both straight and curved line regions.

[0122] The channel width of the transistor 50 is the width of the source region or the width of the drain region in the direction perpendicular to the channel length direction. In other words, the channel width is the width of the region where the semiconductor layer 113 contacts the conductive layer 111 or the width of the region where the semiconductor layer 113 contacts the conductive layer 112 in the direction perpendicular to the channel length direction. Here, the width of the region where the semiconductor layer 113 contacts the conductive layer 112 in the direction perpendicular to the channel length direction is used as the channel width of the transistor 50. Figure 4A and Figure 4B The double-headed solid arrow in FIG. 5 represents a channel width W50 of the transistor 50. The channel width W50 is the length of the bottom end of the conductive layer 112 on the side of the opening 123 when viewed from above.

[0123] The channel width W50 is determined by the planar shape of the opening 123. Figure 4A and Figure 4B The double-dot chain arrow in FIG. 1 indicates the width D123 of the opening 123. Width D123 refers to the short side of the smallest rectangle circumscribing the opening 123 when viewed from above. When the opening 123 is formed by photolithography, the width D123 of the opening 123 is greater than the limiting resolution of the exposure apparatus. The width D123 is, for example, preferably greater than or equal to 0.20 μm and less than 5.0 μm, more preferably greater than or equal to 0.20 μm and less than 4.5 μm, more preferably greater than or equal to 0.20 μm and less than 4.0 μm, more preferably greater than or equal to 0.20 μm and less than 3.5 μm, more preferably greater than or equal to 0.20 μm and less than 3.0 μm, more preferably greater than or equal to 0.20 μm and less than 2.5 μm, more preferably greater than or equal to 0.20 μm and less than 2.0 μm, more preferably greater than or equal to 0.20 μm and less than 1.5 μm, more preferably greater than or equal to 0.30 μm and less than 1.5 μm, more preferably greater than or equal to 0.30 μm and less than 1.2 μm, more preferably greater than or equal to 0.40 μm and less than 1.2 μm, more preferably greater than or equal to 0.40 μm and less than 1.0 μm, more preferably greater than or equal to 0.50 μm and less than 1.0 μm. Note that when the planar shape of the opening 123 is circular, the width D123 corresponds to the diameter of the opening 123 , and the channel width W50 can be equal to the length of the outer periphery of the opening 123 when viewed from a planar perspective, which can be calculated as “D123×π”.

[0124] <Pixel Structure Example 1> Figure 5 It shows Figure 1C FIG. 4 is a plan view of a structural example of a pixel circuit 40A shown in FIG. Figure 6 yes Figure 5 The cross-sectional view of the dotted line B1-B2 in FIG. Figure 5 , two rows and two columns of pixel circuits 40A (pixel circuit 40A[i,j], pixel circuit 40A[i,j+1], pixel circuit 40A[i+1,j], and pixel circuit 40A[i+1,j+1]) are shown. Here, i and j are integers greater than or equal to 1.

[0125] exist Figure 5 and Figure 6 In the example shown, the structures of transistors 51 and 52 are the same as those of Figure 3A1 and Figure 3BThe structure of transistor 50 shown is similar. Here, the conductive layer 111, conductive layer 112, semiconductor layer 113, and conductive layer 115 included in transistor 51 are conductive layer 111a, conductive layer 112a, semiconductor layer 113a, and conductive layer 115a, respectively. Furthermore, the conductive layer 111, conductive layer 112, semiconductor layer 113, and conductive layer 115 included in transistor 52 are conductive layer 111b, conductive layer 112b, semiconductor layer 113b, and conductive layer 115b, respectively. Furthermore, the openings 121 and 123 provided in transistor 51 are openings 121a and 123a, respectively, and the openings 121 and 123 provided in transistor 52 are openings 121b and 123b, respectively.

[0126] Figure 7A Indicated by a double-dotted line Figure 5 The conductive layers 115a and 115b are shown in a plan view without hatching. Figure 7B Indicated by a double-dotted line Figure 7A The semiconductor layer 113a and the semiconductor layer 113b are shown in a plan view without hatching. Figure 7A and Figure 7B A structural example of one pixel circuit 40A is shown.

[0127] Figure 5 and Figure 6 The capacitor 57 shown includes a conductive layer 117 on the insulating layer 103, the insulating layer 105 on the conductive layer 117, and a conductive layer 115b provided on the insulating layer 105 and having a region overlapping with the conductive layer 117. Here, the conductive layer 117 can be provided in the same layer as the conductive layer 112. Therefore, the conductive layer 117 can include the same material as the conductive layer 112 and can be formed by the same process. For example, the conductive layer 112 and the conductive layer 117 can be formed by processing the same conductive film.

[0128] Insulating layer 105 includes opening 125a that reaches conductive layer 112a. Conductive layer 112a and conductive layer 115b are electrically connected within opening 125a. Specifically, for example, conductive layer 112a and conductive layer 115b are in contact within opening 125a. Furthermore, insulating layer 103 includes opening 125b that reaches conductive layer 111b. Conductive layer 111b and conductive layer 117 are electrically connected within opening 125b. Specifically, for example, conductive layer 111b and conductive layer 117 are in contact within opening 125b.

[0129] exist Figure 5 、 Figure 7A and Figure 7BIn the embodiment, the shapes of the openings 125a and 125b when viewed from a plane are circular, but one embodiment of the present invention is not limited thereto, and the openings 125a and 125b may have the same shape as that of the openings 121 and 123.

[0130] At least a portion of the conductive layer 111a is used as a wiring 43 having a function as a signal line, and is connected to the conductive layer 111a. Figure 1A At least a portion of the conductive layer 112b is used as a wiring 45 having a function as a power supply line and is electrically connected to the signal line driver circuit 13 shown. Figure 1A At least a portion of the conductive layer 115a is used as a wiring 41 having a scanning line function and is electrically connected to the power supply circuit 15 shown. Figure 1A The scan line driving circuit 11 shown is electrically connected.

[0131] Conductive layer 115a has an area extending in the X direction. Furthermore, conductive layer 111a and conductive layer 112b have areas extending in the Y direction. Conductive layer 115a has an area overlapping with conductive layer 111a and an area overlapping with conductive layer 112b. Specifically, a portion of the area extending in the X direction of conductive layer 115a overlaps a portion of the area extending in the Y direction of conductive layer 111a. Furthermore, a portion of the area extending in the X direction of conductive layer 115a overlaps a portion of the area extending in the Y direction of conductive layer 112b.

[0132] Here, the region of conductive layer 115a extending in the X direction can be said to be used as wiring 41, or the entire conductive layer 115a can be said to be used as wiring 41. Furthermore, the region of conductive layer 111a extending in the Y direction can be said to be used as wiring 43, or the entire conductive layer 111a can be said to be used as wiring 43. Furthermore, the region of conductive layer 112b extending in the Y direction can be said to be used as wiring 45, or the entire conductive layer 112b can be said to be used as wiring 45. The above also applies to other conductive layers having regions that function as wiring 41, wiring 43, or wiring 45, unless otherwise specified.

[0133] exist Figure 5 and Figure 6In the example shown in and [ 15 ], in the region where the conductive layer 111a overlaps with the conductive layer 115a, the insulating layer 103 is provided over the conductive layer 111a, the insulating layer 105 is provided over the insulating layer 103, and the conductive layer 115a is provided over the insulating layer 105. That is, in the region where the conductive layer 111a overlaps with the conductive layer 115a, the insulating layer 103 and the insulating layer 105 are provided between the conductive layers 111a and 115a. Furthermore, in the region where the conductive layer 112b overlaps with the conductive layer 115a, the insulating layer 105 is provided over the conductive layer 112b, and the conductive layer 115a is provided over the insulating layer 105. That is, in the region where the conductive layer of the wiring 41 functioning as a scanning line overlaps with the conductive layer of the wiring 45 functioning as a power supply line, the insulating layer 105 is provided between these conductive layers, and the insulating layer 103 is not provided.

[0134] In a capacitor in which an insulating layer serving as a dielectric is provided between a pair of electrodes, the thinner the thickness of the insulating layer, the greater the capacitance value of the capacitor. Thus, when an insulating layer 105 is provided between a conductive layer serving as wiring 41 and a conductive layer serving as wiring 45 without providing an insulating layer 103, the capacitance value of the parasitic capacitor 25 formed by these conductive layers becomes larger than the case where both the insulating layer 103 and the insulating layer 105 are provided. Therefore, the charge is supplied from the parasitic capacitor 25 to the wiring 45, that is, the parasitic capacitor 25 is used as a bypass capacitor. Thus, for example, the voltage drop of the power supply potential generated by the power supply circuit 15 due to the wiring resistance can be suppressed. Thus, in particular, in a pixel 21 having a long wiring distance from the power supply circuit 15, for example, the pixel 21 can be suppressed from emitting light of a desired brightness due to a drop in the potential supplied as the power supply potential. As described above, a display device according to one embodiment of the present invention can be a display device with high display quality.

[0135] Figure 8A It is magnified Figure 5 FIG. 1 is a plan view of a portion of the conductive layer 115a serving as the wiring 41, a portion of the conductive layer 111a serving as the wiring 43, and a portion of the conductive layer 112b serving as the wiring 45. Figure 8A In the abstract, zoom in Figure 5 The region of the conductive layer 115a extending in the X direction, the region of the conductive layer 111a extending in the Y direction, and the region of the conductive layer 112b extending in the Y direction are shown.

[0136] exist Figure 8A In FIG, the distance in the X direction between the region of the conductive layer 111a extending in the Y direction and the region of the conductive layer 112b extending in the Y direction when viewed from a plane is defined as space S1. For example, the shortest distance among these distances can be defined as space S1. Space S1 is the space between wiring 43 and wiring 45. Here, Figure 8AThe sub-pixels electrically connected to the wiring 43 and the sub-pixels electrically connected to the wiring 45 shown may be sub-pixels in adjacent columns. Figure 8A When the wiring 45 shown is electrically connected to the sub-pixel in the j-th column, Figure 8A The wiring 43 shown can be electrically connected to the sub-pixel in the j+1th column.

[0137] The widths of the regions of conductive layer 111a and conductive layer 112b extending in the Y direction, that is, the lengths in the X direction, are referred to as wiring width L1 and wiring width L2, respectively. Wiring width L1 is the width of wiring 43, and wiring width L2 is the width of wiring 45.

[0138] The wiring 43 and the wiring 45 are provided in different layers. Thus, the space S1 can be made smaller than when the wiring 43 and the wiring 45 are provided in the same layer. Figure 8A As shown, the space S1 can be made smaller than the wiring width L1, or can be made smaller than the wiring width L2.

[0139] Figure 8B yes Figure 8A A modified example of the structure shown in FIG. 1 is shown in which the end portion of the conductive layer 111a overlaps with the conductive layer 112b. Figure 8B In the example shown, the space S1 is 0.

[0140] Figure 8C It shows the Figure 8A A plan view showing an example of the structure of the additional conductive layer 111b. Figure 8C In the example, the distance between the conductive layer 111a and the conductive layer 111b when viewed from a plane is defined as space S2. For example, the shortest distance between the conductive layer 111a and the conductive layer 111b in the X direction or the Y direction when viewed from a plane can be defined as space S2. Space S2 is the space between the conductive layer 111a and the conductive layer 111b. Figure 8C The conductive layer 111b shown can be electrically connected to Figure 8C The sub-pixels of the conductive layer 111a are shown electrically connected to the sub-pixels of the same column.

[0141] The conductive layer 111a and the conductive layer 111b are provided in the same layer, and the conductive layer 111a and the conductive layer 112b are provided in different layers. Thus, the space S1 can be made smaller than the space S2.

[0142] Figure 8D It shows the Figure 8A A plan view showing an example of the structure of the additional conductive layer 112a. Figure 8DIn the example, the distance between the conductive layer 112a and the conductive layer 112b when viewed from a plane is defined as space S3. For example, the shortest distance between the conductive layer 112a and the conductive layer 112b in the X direction or the Y direction when viewed from a plane can be defined as space S3. Space S3 is the space between the conductive layer 112a and the conductive layer 112b. Figure 8D The conductive layer 112b shown can be electrically connected to Figure 8D The sub-pixels of the conductive layer 112a are shown electrically connected to the sub-pixels of the same column.

[0143] The conductive layer 111a and the conductive layer 112a are provided in different layers, and the conductive layer 112a and the conductive layer 112b are provided in the same layer. Thus, the space S1 can be made smaller than the space S3.

[0144] As described above, in a display device according to one embodiment of the present invention, space S1 can be made smaller, for example, smaller than wiring width L1, wiring width L2, space S2, and space S3. This allows for miniaturization of pixels, and thus a display device according to one embodiment of the present invention can be a high-definition display device.

[0145] Figure 9A 、 Figure 10 、 Figure 11A and Figure 11B They are Figure 5 、 Figure 6 、 Figure 7A and Figure 7B The following is an example of a modification of the structure shown. Figure 5 、 Figure 6 、 Figure 7A and Figure 7B Description of the repeated section.

[0146] exist Figure 9A 、 Figure 10 、 Figure 11A and Figure 11B In the pixel circuit 40A shown in the structure, capacitor 57 includes conductive layer 112b on insulating layer 103, insulating layer 105 on conductive layer 112b, and conductive layer 115b disposed on insulating layer 105 and having a region overlapping with conductive layer 112b. Furthermore, a portion of the region extending in the X direction of conductive layer 115a overlaps a portion of the region extending in the Y direction of conductive layer 111b. Here, it can be said that the region extending in the Y direction of conductive layer 111b serves as wiring 45, or it can be said that the entire conductive layer 111b serves as wiring 45.

[0147] Conductive layer 136 is provided so as to have a region overlapping with conductive layer 111b. Specifically, conductive layer 136 has a region extending in the Y direction, and this region overlaps with the region of conductive layer 111b extending in the Y direction.

[0148] The conductive layer 136 is provided between the insulating layer 103 and the insulating layer 105. That is, the conductive layer 136 is provided in the same layer as the conductive layer 112. Therefore, the conductive layer 136 can include the same material as the conductive layer 112 and can be formed by the same process. For example, the conductive layer 112 and the conductive layer 136 can be formed by processing the same conductive film.

[0149] The insulating layer 103 includes an opening 126 that reaches the conductive layer 111b. The conductive layer 111b is electrically connected to the conductive layer 136 inside the opening 126. Specifically, for example, there is a region inside the opening 126 where the conductive layer 111b is in contact with the conductive layer 136. Figure 9A 、 Figure 11A and Figure 11B In the embodiment, the shape of the opening 126 when viewed from a plane is circular, but one embodiment of the present invention is not limited thereto and may have the same shape as that of at least one of the openings 121, 123 and 125.

[0150] Conductive layer 136 is electrically connected to conductive layer 111b serving as wiring 45, and thus conductive layer 136 also serves as wiring 45. As described above, wiring 45 and Figure 1A The conductive layer 136 is electrically connected to the power supply circuit 15 .

[0151] For example, by using both the conductive layer 111b and the conductive layer 136 as the wiring 45, the resistance of the wiring 45 can be reduced compared to a case where only the conductive layer 111b is used as the wiring 45. This can suppress a drop in the voltage of the power supply potential generated by the power supply circuit 15. As a result, in particular, in pixels 21 having a long wiring distance from the power supply circuit 15, for example, a drop in the potential supplied as the power supply potential can be suppressed, which can prevent the pixels 21 from emitting light with the desired brightness. As described above, a display device according to one embodiment of the present invention can be a display device with high display quality.

[0152] exist Figure 9A and Figure 10In the example shown in FIG. 1 , in the region where conductive layer 111b overlaps conductive layer 115a, insulating layer 103 is provided on conductive layer 111b, conductive layer 136 is provided on insulating layer 103, insulating layer 105 is provided on conductive layer 136, and conductive layer 115a is provided on insulating layer 105. That is, in the region where conductive layer 115a, which serves as a wiring 41 functioning as a scan line, overlaps conductive layer 136, which is a layer above the conductive layer of wiring 45 functioning as a power supply line, insulating layer 105 is provided between these layers, and insulating layer 103 is not provided. On the other hand, insulating layer 103 is provided between the conductive layer serving as wiring 41 and conductive layer 111b, which is a layer below the conductive layer of wiring 45. Here, in a capacitor in which an insulating layer serving as a dielectric is provided between a pair of electrodes, the thinner the insulating layer, the greater the capacitance value of the capacitor.

[0153] As described above, by providing the conductive layer 136 as the wiring 45, the capacitance value of the parasitic capacitor 25 formed in the region where the wiring 41 and the wiring 45 overlap becomes larger than when the conductive layer 136 is not provided. In this way, the charge is supplied from the parasitic capacitor 25 to the wiring 45, that is, the parasitic capacitor 25 is used as a bypass capacitor. As a result, the voltage drop of the power supply potential generated by the power supply circuit 15 can be suppressed. Therefore, especially in the pixel 21 having a long wiring distance from the power supply circuit 15, for example, it can be suppressed that the pixel 21 cannot emit light of the desired brightness due to the decrease in the potential supplied as the power supply potential. As described above, the display device of one embodiment of the present invention can be a display device with high display quality.

[0154] Figure 9B It is magnified Figure 9A FIG. 1 is a plan view of a portion of the conductive layer 111b and the conductive layer 136 used as the wiring 45. Figure 9B In FIG. 1 , the width of the regions of the conductive layer 111b and the conductive layer 136 extending in the Y direction, that is, the length in the X direction, are respectively defined as the wiring width L3 and the wiring width L4. Figure 9B As shown, the wiring width L3 can be made larger than the wiring width L4.

[0155] Figure 9C yes Figure 9B The modified example of the structure shown shows an example in which the wiring width L3 is smaller than the wiring width L4. Note that the wiring width L3 and the wiring width L4 may be equal or substantially equal.

[0156] Figure 12 Yes Figure 5 The plan view shown in the figure adds a structural example of the pixel electrode 311 of the light-emitting element 60 . Figure 13 yes Figure 12 A cross-sectional view along the dashed line B1-B2 is shown.

[0157] An insulating layer 218 and an insulating layer 235 on insulating layer 218 are provided to cover transistors 51, 52, and capacitor 57. A light-emitting element 60 is provided on insulating layer 235, and a protective layer 331 is provided to cover light-emitting element 60. A substrate 152 is bonded to protective layer 331 via an adhesive layer 142.

[0158] Light-emitting element 60 includes a pixel electrode 311 on insulating layer 235, an island-shaped layer 313 on pixel electrode 311, and a common electrode 315 on island-shaped layer 313. Layer 313 includes at least a light-emitting layer. Note that layer 313 can be considered an EL layer. The common electrode is also referred to as a counter electrode.

[0159] In this specification, "island-shaped" means that two or more layers formed using the same material through the same process are physically separated. For example, an island-shaped light-emitting layer means that the light-emitting layer is physically separated from the adjacent light-emitting layer.

[0160] The insulating layer 105, the insulating layer 218, and the insulating layer 235 include an opening 129 that reaches the conductive layer 117. A pixel electrode 311 is provided so as to cover the opening 129. The pixel electrode 311 has a shape that extends along the top and side surfaces of the insulating layer 235, the side surfaces of the insulating layer 218, the side surfaces of the insulating layer 105, and the top surface of the conductive layer 117. For example, the pixel electrode 311 has a region that contacts the top and side surfaces of the insulating layer 235, the side surfaces of the insulating layer 218, the side surfaces of the insulating layer 105, and the top surface of the conductive layer 117. The pixel electrode 311 can be electrically connected to the conductive layer 117 within the opening 129.

[0161] exist Figure 12 In the embodiment, although the shape of the opening 129 when viewed from a plane is circular, one embodiment of the present invention is not limited thereto and may have the same shape as that of at least one of the openings 121, 123 and 125.

[0162] like Figure 13 As shown, an insulating layer 237 may be provided to cover the top end of the pixel electrode 311. The insulating layer 237 serves as a partition wall (also referred to as a bank, dam, or spacer). By providing the insulating layer 237, it is possible to prevent the pixel electrode 311 from contacting the common electrode 315 and thus short-circuiting the light-emitting element 60.

[0163] A recess is formed in the pixel electrode 311 to cover the opening 129, and the insulating layer 237 is embedded in the recess. For example, after forming the insulating layer 237 to cover the top end of the pixel electrode 311 and the opening 129, the layer 313 can be formed using a fine metal mask (FMM).

[0164] Note that the pixel electrode 311 may also have a region that overlaps with the region of the conductive layer 111a extending in the Y direction, a region that overlaps with the region of the conductive layer 112b extending in the Y direction, or a region that overlaps with the region of the conductive layer 115a extending in the X direction. This can improve the aperture ratio of the pixel. On the other hand, when the pixel electrode 311 does not overlap with the region of the conductive layer 111a extending in the Y direction, the region of the conductive layer 112b extending in the Y direction, and the region of the conductive layer 115a extending in the X direction, it is possible to suppress noise caused by the signal supplied to the conductive layer 111a, noise caused by the potential of the conductive layer 112b, and noise caused by the signal supplied to the conductive layer 115a from propagating to the pixel electrode 311.

[0165] A light-shielding layer 317 may be provided on the surface of the substrate 152 facing the adhesive layer 142. The light-shielding layer 317 may be provided between adjacent light-emitting elements 60. The provision of the light-shielding layer 317 can suppress reflection of external light into the display portion, thereby improving the display quality of the display device of one embodiment of the present invention. Note that a structure without the light-shielding layer 317 is also possible. In this case, the efficiency of light extraction from the light-emitting element 60 can be improved.

[0166] Figure 14 Yes Figure 9A The plan view shown shows an example of a structure in which a pixel electrode 311 of the light-emitting element 60 is added. Figure 15 yes Figure 14 The cross-sectional view of the dotted line B1-B2 is shown. Figure 12 and Figure 13 Description of the repeated section.

[0167] The insulating layer 105, the insulating layer 218, and the insulating layer 235 include an opening 129 that reaches the conductive layer 112b. A pixel electrode 311 is provided to cover the opening 129. The pixel electrode 311 has a shape that extends along the top and side surfaces of the insulating layer 235, the side surfaces of the insulating layer 218, the side surfaces of the insulating layer 105, and the top surface of the conductive layer 112b. For example, the pixel electrode 311 has a region that contacts the top and side surfaces of the insulating layer 235, the side surfaces of the insulating layer 218, the side surfaces of the insulating layer 105, and the top surface of the conductive layer 112b. The pixel electrode 311 can be electrically connected to the conductive layer 112b within the opening 129.

[0168] The pixel electrode 311 may also have an area that overlaps with the area of ​​the conductive layer 111a extending in the Y direction, an area that overlaps with the area of ​​the conductive layer 136 extending in the Y direction, or an area that overlaps with the area of ​​the conductive layer 115a extending in the X direction. This can improve the aperture ratio of the pixel. On the other hand, when the pixel electrode 311 does not overlap with the area of ​​the conductive layer 111a extending in the Y direction, the area of ​​the conductive layer 136 extending in the Y direction, and the area of ​​the conductive layer 115a extending in the X direction, noise caused by the signal supplied to the conductive layer 111a, noise caused by the potential of the conductive layer 136, and noise caused by the signal supplied to the conductive layer 115a can be suppressed from propagating to the pixel electrode 311.

[0169] <Pixel Structure Example 2> The following describes part of its structure and Figures 5 to 7B and Figures 9A to 15 Different pixel circuit structure examples. Note that the following is appropriately omitted Figures 5 to 7B and Figures 9A to 15 Description of the repeated section.

[0170] [Structure Example 2-1] Figure 16A yes Figure 5 A modified example of the structure shown in FIG. 4 shows an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap, and at least a portion of the transistor 52 is provided in a region where the wiring 45 extends in the Y direction. Specifically, Figure 16A In the example shown below, a semiconductor layer 113a, openings 121a, and 123a are provided in the region where wiring 41 and wiring 43 overlap, and a semiconductor layer 113b, openings 121b, and 123b are provided in the region where wiring 45 extends in the Y direction. Figure 16A An example is shown in which the semiconductor layer 113a, the opening 121a, and the opening 123a overlap with the region of the conductive layer 111a extending in the Y direction and the region of the conductive layer 115a extending in the X direction. Figure 16A An example is shown in which the semiconductor layer 113 b , the opening 121 b , and the opening 123 b overlap with the region of the conductive layer 112 b extending in the Y direction.

[0171] Figure 16B Indicated by a double-dotted line Figure 16A The conductive layers 115a and 115b are shown in a plan view without hatching. Figure 16C Indicated by a double-dotted line Figure 16B The semiconductor layer 113a and the semiconductor layer 113b are shown in a plan view without hatching. Figure 16A2 shows a configuration example of a pixel circuit 40A with two rows and two columns. Figure 16B and Figure 16C A structural example of one pixel circuit 40A is shown.

[0172] By adopting as the pixel circuit 40A Figure 16A The structure shown is different from the pixel circuit 40A. Figure 5 Compared with the case of the structure shown in FIG. 4 , the pixel can be miniaturized while ensuring the area of ​​the capacitor 57. On the other hand, by adopting Figure 5 The structure shown is different from the pixel circuit 40A. Figure 16A Compared with the case of the illustrated structure, the degree of freedom in the layout of the pixel circuit 40A can be improved.

[0173] Figure 17A yes Figure 9A A modified example of the structure shown in FIG. 4 shows an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap. Specifically, Figure 17A An example is shown in which the semiconductor layer 113a, the opening 121a, and the opening 123a are provided in the region where the wiring 41 and the wiring 43 overlap. Figure 17A An example is shown in which the semiconductor layer 113 a , the opening 121 a , and the opening 123 a overlap with the region of the conductive layer 111 a extending in the Y direction and the region of the conductive layer 115 a extending in the X direction.

[0174] Figure 17B Indicated by a double-dotted line Figure 17A The conductive layers 115a and 115b are shown in a plan view without hatching. Figure 17C Indicated by a double-dotted line Figure 17B The semiconductor layer 113a and the semiconductor layer 113b are shown in a plan view without hatching. Figure 17A 2 shows a configuration example of a pixel circuit 40A with two rows and two columns. Figure 17B and Figure 17C A structural example of one pixel circuit 40A is shown.

[0175] By adopting as the pixel circuit 40A Figure 17A The structure shown is different from the pixel circuit 40A. Figure 9A Compared with the case of the structure shown in FIG. 4 , the pixel can be miniaturized while ensuring the area of ​​the capacitor 57. On the other hand, by adopting Figure 9A The structure shown is different from the pixel circuit 40A. Figure 17A Compared with the case of the illustrated structure, the degree of freedom in the layout of the pixel circuit 40A can be improved.

[0176] Figure 18A yes Figure 5 A modified example of the structure shown in FIG. 1 is an example in which the conductive layer 117 and the conductive layer 111 b are electrically connected via the conductive layer 119 . Figure 18B yes Figure 18A The cross-sectional view taken along the dashed line B3-B4 in FIG. 1 shows, for example, the conductive layer 117, the conductive layer 119, and the transistor 52. Figure 18A and Figure 18B In the illustrated example, the conductive layer 119 is provided in the same layer as the conductive layer 115. Therefore, the conductive layer 119 can include the same material as the conductive layer 115 and can be formed by the same process. For example, the conductive layer 115 and the conductive layer 119 can be formed by processing the same conductive film.

[0177] exist Figure 18B In the illustrated example, opening 125b1, which reaches conductive layer 117, is provided in insulating layer 105. Conductive layer 117 and conductive layer 119 are electrically connected within opening 125b1. Specifically, for example, a region in contact between conductive layer 117 and conductive layer 119 exists within opening 125b1. Furthermore, opening 125b2, which reaches conductive layer 111b, is provided in insulating layer 103 and insulating layer 105. Conductive layer 111b and conductive layer 119 are electrically connected within opening 125b2. Specifically, for example, a region in contact between conductive layer 111b and conductive layer 119 exists within opening 125b2.

[0178] As described above, the conductive layer 117 and the conductive layer 111b can be electrically connected via the conductive layer 119. With this structure of the display device according to one embodiment of the present invention, the opening 125b (opening 125b1 and opening 125b2) can be formed in parallel with the opening 125a. Here, for example, the conductive layer 119 can also be considered a connection electrode for electrically connecting the conductive layer 117 and the conductive layer 111b.

[0179] Figure 19 yes Figure 18A The modified example of the structure shown in FIG. 5 shows an example in which at least a portion of transistor 51 is provided in the region where wiring 41 and wiring 43 overlap. In addition, an example in which at least a portion of transistor 52 is provided in the region where wiring 45 extends in the Y direction is shown.

[0180] Figure 20A1 and Figure 20A2 yes Figure 18A A modified example of the structure shown in FIG. 1 is shown, in which the conductive layer 117 and the conductive layer 111b are electrically connected via the pixel electrode 311. Figure 20A1The pixel electrode 311 is represented by a double-dashed line without hatching, and Figure 20A2 The pixel electrode 311 is indicated by a solid line and hatched. Figure 20B yes Figure 20A1 and Figure 20A2 Cross-sectional view along the dot-dash line B3-B4.

[0181] exist Figure 20B In the illustrated example, opening 129, which reaches conductive layer 117, is provided in insulating layer 105, insulating layer 218, and insulating layer 235. Conductive layer 117 is electrically connected to pixel electrode 311 within opening 129. Specifically, for example, a region in contact with conductive layer 117 and pixel electrode 311 exists within opening 129. Furthermore, opening 125b, which reaches conductive layer 111b, is provided in insulating layer 103, insulating layer 105, insulating layer 218, and insulating layer 235. Conductive layer 111b is electrically connected to pixel electrode 311 within opening 125b. Specifically, for example, a region in contact with pixel electrode 311 exists within opening 125b.

[0182] As described above, the conductive layer 117 and the conductive layer 111b can be electrically connected to each other through the pixel electrode 311. Here, the opening 125b and the opening 129 can be formed in parallel.

[0183] Figure 21A and Figure 21B They are Figure 20A1 and Figure 20A2 The modified example of the structure shown in FIG. 1 shows an example in which at least a portion of transistor 51 is provided in the region where wiring 41 and wiring 43 overlap. In addition, an example in which at least a portion of transistor 52 is provided in the region where wiring 45 extends in the Y direction is also shown.

[0184] Figure 22A It shows Figure 2B FIG. 4 is a plan view of a structural example of a pixel circuit 40C shown in FIG. Figure 22B yes Figure 22A The cross-sectional view along the dotted line B5-B6 in FIG. 1 shows an example of the structure of the transistor 53 and the capacitor 57. Figure 22A and Figure 22B The structures shown are Figure 5 and Figure 6 The following is an example of a modification of the structure shown. Figure 5 and Figure 6 Description of the repeated section.

[0185] exist Figure 22A and Figure 22B In the example shown, the structures of transistors 51, 52, and 53 are the same as those of Figure 3A1 and Figure 3B The structure shown is the same. Here, the conductive layer 111, the conductive layer 112, the semiconductor layer 113, and the conductive layer 115 included in the transistor 53 are respectively the conductive layer 111c, the conductive layer 112c, the semiconductor layer 113c, and the conductive layer 115c. Furthermore, the openings 121 and 123 provided in the transistor 53 are respectively the opening 121c and the opening 123c.

[0186] Figure 23A Shown with double-dotted lines Figure 22A The conductive layer 115a, the conductive layer 115b and the conductive layer 115c are shown in a plan view without hatching. Figure 23B Shown with double-dotted lines Figure 23A The semiconductor layer 113a, the semiconductor layer 113b, and the semiconductor layer 113c are shown in a plan view without hatching. Figure 23A and Figure 23B An example of the structure of one pixel circuit 40C is shown.

[0187] The conductive layer 111c is used as one of the source electrode and the drain electrode of the transistor 53, and the conductive layer 112c is used as the other of the source electrode and the drain electrode of the transistor 53. Figure 22A 、 Figure 23A and Figure 23B An example is shown in which the other of the source electrode and the drain electrode of the transistor 53 and the other electrode of the capacitor 57 use the same conductive layer 112 c .

[0188] exist Figure 22A and Figure 22B In the example shown in FIG. 1 , the conductive layer 115a is used as the wiring 41a, and the conductive layer 115c is used as the wiring 41b. Figure 22A and Figure 22B In the example shown in FIG. 1 , the conductive layer 111c is used as the wiring 48. The conductive layer 111c is connected to the Figure 2A The conductive layer 111c is electrically connected to the reference potential generating circuit 17. The conductive layer 111c may have a region overlapping with the conductive layer 112b.

[0189] Conductive layer 115a and conductive layer 115c have regions extending in the X direction. Conductive layer 111a, conductive layer 112b, and conductive layer 111c have regions extending in the Y direction. Conductive layer 115a and conductive layer 115c have regions overlapping with conductive layer 111a, regions overlapping with conductive layer 112b, and regions overlapping with conductive layer 111c. Specifically, a portion of the region extending in the X direction of conductive layer 115a overlaps with a portion of the regions extending in the Y direction of conductive layer 111a, conductive layer 112b, and conductive layer 111c. Furthermore, a portion of the region extending in the X direction of conductive layer 115c overlaps with a portion of the regions extending in the Y direction of conductive layer 111a, conductive layer 112b, and conductive layer 111c.

[0190] Here, the region of conductive layer 115a extending in the X direction can be said to function as wiring 41a, or the entire conductive layer 115a can be said to function as wiring 41a. Furthermore, the region of conductive layer 115c extending in the X direction can be said to function as wiring 41b, or the entire conductive layer 115c can be said to function as wiring 41b. Furthermore, the region of conductive layer 111c extending in the Y direction can be said to function as wiring 48, or the entire conductive layer 111c can be said to function as wiring 48. The above also applies to other conductive layers having regions functioning as wiring 41a, wiring 41b, or wiring 48, unless otherwise noted.

[0191] Figure 24A Yes Figure 22A The plan view shown shows an example of a structure in which a pixel electrode 311 of the light-emitting element 60 is added. Figure 24B yes Figure 24A The following mainly describes the cross-sectional view of the dotted line B5-B6. Figure 12 and Figure 13 Different structures, appropriately omitted with Figure 12 and Figure 13 Note that in Figure 24A in, omit Figure 22A A portion of the symbols shown may be omitted in the following drawings.

[0192] The insulating layer 105, the insulating layer 218, and the insulating layer 235 include an opening 129 that reaches the conductive layer 112c. A pixel electrode 311 is provided to cover the opening 129. The pixel electrode 311 has a shape that extends along the top and side surfaces of the insulating layer 235, the side surfaces of the insulating layer 218, the side surfaces of the insulating layer 105, and the top surface of the conductive layer 112c. For example, the pixel electrode 311 has a region that contacts the top and side surfaces of the insulating layer 235, the side surfaces of the insulating layer 218, the side surfaces of the insulating layer 105, and the top surface of the conductive layer 112c. The pixel electrode 311 can be electrically connected to the conductive layer 112c within the opening 129.

[0193] Alternatively, the pixel electrode 311 may have an area that overlaps with at least one of the area of ​​the conductive layer 115a extending in the X direction, the area of ​​the conductive layer 115c extending in the X direction, the area of ​​the conductive layer 111a extending in the Y direction, the area of ​​the conductive layer 112b extending in the Y direction, and the area of ​​the conductive layer 111c extending in the Y direction. This can increase the aperture ratio of the pixel. On the other hand, since the pixel electrode 311 does not overlap with the region of the conductive layer 115a extending in the X direction, the region of the conductive layer 115c extending in the X direction, the region of the conductive layer 111a extending in the Y direction, the region of the conductive layer 112b extending in the Y direction, and the region of the conductive layer 111c extending in the Y direction, propagation of noise due to the signal supplied to the conductive layer 115a, noise due to the signal supplied to the conductive layer 115c, noise due to the signal supplied to the conductive layer 111a, noise due to the potential of the conductive layer 112b, and noise due to the potential of the conductive layer 111c to the pixel electrode 311 can be suppressed.

[0194] Figure 25A yes Figure 22A In the example of the variation of the structure shown in FIG, at least a portion of the transistor 51 is provided in the region where the wiring 41a and the wiring 43 overlap. In addition, at least a portion of the transistor 52 is provided in the region where the wiring 45 extends in the Y direction. In addition, at least a portion of the transistor 53 is provided in the region where the wiring 41b extends in the X direction. Specifically, Figure 25A An example is shown in which the semiconductor layer 113a, the opening 121a, and the opening 123a are provided in the region where the wiring 41a and the wiring 43 overlap. Figure 25A An example is shown in which the semiconductor layer 113b, the opening 121b, and the opening 123b are provided in the region where the wiring 45 extends in the Y direction. Figure 25A An example is shown in which the semiconductor layer 113c, the opening 121c, and the opening 123c are provided in the region where the wiring 41b extends in the X direction. Figure 25AThe example in which the semiconductor layer 113a, the opening 121a, and the opening 123a overlap with the region of the conductive layer 111a extending in the Y direction and the region of the conductive layer 115a extending in the X direction is shown. Figure 25A An example is shown in which the semiconductor layer 113b, the opening 121b, the opening 123b, and the region of the conductive layer 112b extending in the Y direction overlap. Figure 25A An example is shown in which the semiconductor layer 113c, the opening 121c, the opening 123c, and the region of the conductive layer 115c extending in the X direction overlap. Figure 25A An example is shown in which the opening 125b overlaps with the conductive layer 115b.

[0195] Figure 25B Indicated by a double-dotted line Figure 25A The conductive layers 115a, 115b, and 115c are shown in plan view without hatching. Figure 25C Indicated by a double-dotted line Figure 25B The semiconductor layer 113a, the semiconductor layer 113b, and the semiconductor layer 113c are shown in a plan view without hatching. Figure 25A 40C is a two-row and two-column pixel circuit. Figure 25B and Figure 25C An example of the structure of one pixel circuit 40C is shown.

[0196] By using, for example, Figure 25A The structure shown is the same as that used in the pixel circuit 40C. Figure 22A Compared with the case of the structure shown in FIG. 4 , the pixel can be miniaturized while ensuring the area of ​​the capacitor 57. On the other hand, by adopting Figure 22A The structure shown is the same as that used in the pixel circuit 40C. Figure 25A Compared with the case of the illustrated structure, the degree of freedom in the layout of the pixel circuit 40C can be improved.

[0197] Figure 26A yes Figure 22A A modified example of the structure shown is shown, in which a conductive layer 117 that can be set in the same layer as the conductive layer 112 is used as another electrode of the capacitor 57 and the conductive layer 117, the conductive layer 111b and the conductive layer 112c are electrically connected through the conductive layer 119. Figure 26B yes Figure 26A The cross-sectional view of the dot-dash line B5-B6 in FIG. Figure 26A and Figure 26BIn the illustrated example, the conductive layer 119 is provided in the same layer as the conductive layer 115. Therefore, the conductive layer 119 can include the same material as the conductive layer 115 and can be formed by the same process. For example, the conductive layer 115 and the conductive layer 119 can be formed by processing the same conductive film.

[0198] exist Figure 26B In the illustrated example, opening 125b1, which reaches conductive layer 117, is provided in insulating layer 105. Conductive layer 117 and conductive layer 119 are electrically connected within opening 125b1. Specifically, for example, a region of contact between conductive layer 117 and conductive layer 119 exists within opening 125b1. Furthermore, opening 125b2, which reaches conductive layer 111b, is provided in insulating layer 103 and insulating layer 105. Conductive layer 111b and conductive layer 119 are electrically connected within opening 125b2. Specifically, for example, a region of contact between conductive layer 111b and conductive layer 119 exists within opening 125b2. Furthermore, opening 125c, which reaches conductive layer 112c, is provided in insulating layer 105. Conductive layer 112c and conductive layer 119 are electrically connected within opening 125c. Specifically, for example, a region of contact between conductive layer 112c and conductive layer 119 exists within opening 125c.

[0199] As described above, the conductive layer 117, the conductive layer 111b, and the conductive layer 112c can be electrically connected via the conductive layer 119. Since the display device of one embodiment of the present invention has such a structure, the opening 125b (opening 125b1 and opening 125b2) and the opening 125c can be formed in parallel with the opening 125a. Figure 26A and Figure 26B In the illustrated example, the conductive layer 119 can also be said to be a connection electrode for electrically connecting the conductive layer 117 , the conductive layer 111 b , and the conductive layer 112 c to each other.

[0200] Figure 27 yes Figure 26A Modifications of the structure shown in FIG. 1 are shown in which at least a portion of transistor 51 is provided in a region where wiring 41a overlaps wiring 43. Furthermore, an example is shown in which at least a portion of transistor 52 is provided in a region where wiring 45 extends in the Y direction. Furthermore, an example is shown in which at least a portion of transistor 53 is provided in a region where wiring 41b extends in the X direction.

[0201] Figure 28A1 and Figure 28A2 yes Figure 26A A modified example of the structure shown in FIG. 1 shows an example in which the conductive layer 117, the conductive layer 111b, and the conductive layer 112c are electrically connected via the pixel electrode 311. Figure 28A1The pixel electrode 311 is represented by a double-dashed line without hatching, and Figure 28A2 The pixel electrode 311 is indicated by a solid line and hatched. Figure 28B yes Figure 28A1 and Figure 28A2 The cross-sectional view along the dot-dash line B5-B6 in FIG.

[0202] exist Figure 28B In the example shown, opening 125b1, which reaches conductive layer 117, is provided in insulating layer 105, insulating layer 218, and insulating layer 235. Conductive layer 117 is electrically connected to pixel electrode 311 within opening 125b1. Specifically, for example, a region in contact with conductive layer 117 and pixel electrode 311 exists within opening 125b1. Furthermore, opening 125b2, which reaches conductive layer 111b, is provided in insulating layer 103, insulating layer 105, insulating layer 218, and insulating layer 235. Conductive layer 111b is electrically connected to pixel electrode 311 within opening 125b2. Specifically, for example, a region in contact with pixel electrode 311 exists within opening 125b2. Furthermore, opening 125c, which reaches conductive layer 112c, is provided in insulating layer 105, insulating layer 218, and insulating layer 235. Conductive layer 112c is electrically connected to pixel electrode 311 within opening 125c. Specifically, for example, a region where the conductive layer 112 c is in contact with the pixel electrode 311 exists inside the opening 125 c .

[0203] As described above, the conductive layer 117, the conductive layer 111b, and the conductive layer 112c can be electrically connected via the pixel electrode 311. Here, the opening 125b1, the opening 125b2, and the opening 125c can be formed in parallel.

[0204] Figure 29A and Figure 29B They are Figure 28A1 and Figure 28A2 Modifications of the structure shown in FIG. 1 are shown in which at least a portion of transistor 51 is provided in a region where wiring 41a overlaps wiring 43. Furthermore, an example is shown in which at least a portion of transistor 52 is provided in a region where wiring 45 extends in the Y direction. Furthermore, an example is shown in which at least a portion of transistor 53 is provided in a region where wiring 41b extends in the X direction.

[0205] Figure 30A yes Figure 22A A modified example of the structure shown is an example in which the conductive layer 133 provided in the same layer as the conductive layer 112 is used as the wiring 48. Figure 30B yes Figure 30A The cross-sectional view along the dotted line B5-B6 is shown. Figure 30A and Figure 30B In the illustrated example, the conductive layer 133 can include the same material and be formed by the same process as the conductive layer 112. For example, the conductive layer 112 and the conductive layer 133 can be formed by processing the same conductive film.

[0206] exist Figure 30A and Figure 30B In the illustrated example, insulating layer 103 includes opening 125c reaching conductive layer 111c, and conductive layer 111c is electrically connected to conductive layer 117 inside opening 125c. Specifically, for example, conductive layer 111c and conductive layer 117 are in contact with each other in a region inside opening 125c.

[0207] exist Figure 30A and Figure 30B In the pixel circuit 40C shown in FIG. 1 , a conductive layer 131 is provided having a region overlapping with the conductive layer 112 c , a region overlapping with the conductive layer 112 b , and a region overlapping with the conductive layer 133 . Figure 30A and Figure 30B In the illustrated example, the conductive layer 131 is provided in the same layer as the conductive layer 115. Therefore, the conductive layer 131 can include the same material as the conductive layer 115 and can be formed by the same process. For example, the conductive layer 115 and the conductive layer 131 can be formed by processing the same conductive film.

[0208] Insulating layer 105 includes opening 125d1 that reaches conductive layer 112c and opening 125d2 that reaches conductive layer 133. Conductive layer 112c is electrically connected to conductive layer 131 within opening 125d1. Furthermore, conductive layer 133 is electrically connected to conductive layer 131 within opening 125d2. Specifically, for example, within opening 125d1, there is a region where conductive layer 112c and conductive layer 131 are in contact. Furthermore, for example, within opening 125d2, there is a region where conductive layer 133 and conductive layer 131 are in contact. As described above, conductive layer 112c and conductive layer 133 can be electrically connected through conductive layer 131. When conductive layer 112c and conductive layer 133 are electrically connected through conductive layer 131, contact between conductive layer 112c and conductive layer 112b, which could cause a short circuit, can be prevented. Here, for example, conductive layer 131 is also referred to as a connecting electrode for electrically connecting conductive layer 112c and conductive layer 133.

[0209] exist Figure 30A In the figure, although the shape of the opening 125d (opening 125d1 and opening 125d2) when viewed from a plane is circular, one embodiment of the present invention is not limited to this and may have a shape that is the same as the shape that at least one of the openings 125a, 125b and 125c may have.

[0210] Conductive layer 133 serving as wiring 48 has a region extending in the Y direction, and a portion of this region overlaps with the region of conductive layer 115a extending in the X direction and the region of conductive layer 115c extending in the X direction. Here, it can be said that the region of conductive layer 133 extending in the Y direction serves as wiring 48, or it can be said that the entire conductive layer 133 serves as wiring 48.

[0211] exist Figure 30A In the example shown, the conductive layer 133 serving as the wiring 48 is provided in a layer different from the conductive layer 111a serving as the wiring 43. Therefore, the distance in the X direction when viewed from a plane between the region extending in the Y direction of the conductive layer 111a and the region extending in the Y direction of the conductive layer 133 can be shorter than the distance in the X direction when viewed from a plane between the region extending in the Y direction of the conductive layer 112b and the region extending in the Y direction of the conductive layer 133. In other words, when viewed from a plane, the space between the wiring 48 and the wiring 43 can be made smaller than the space between the wiring 48 and the wiring 45. On the other hand, for example, Figure 22A In the illustrated example, conductive layer 111c serving as wiring 48 is provided in a different layer from conductive layer 112b serving as wiring 45. Therefore, the space between wiring 48 and wiring 45 can be made smaller than the space between wiring 48 and wiring 43 when viewed from above.

[0212] Figure 31A yes Figure 30A Modifications of the structure shown in FIG. 1 are shown in which at least a portion of transistor 51 is provided in a region where wiring 41a overlaps wiring 43. Furthermore, an example is shown in which at least a portion of transistor 52 is provided in a region where wiring 45 extends in the Y direction. Furthermore, an example is shown in which at least a portion of transistor 53 is provided in a region where wiring 41b extends in the X direction. Figure 31B yes Figure 31A The cross-sectional view along the dashed line B7-B8 is shown.

[0213] exist Figure 31A and Figure 31B In the illustrated example, pixel circuit 40C does not include conductive layer 131 for connecting electrodes, and conductive layer 111c and conductive layer 133 are electrically connected within opening 125d. Opening 125d is provided in insulating layer 103 so as to reach conductive layer 111c. For example, within opening 125d, there is a region where conductive layer 111c and conductive layer 133 are in contact.

[0214] Figure 32A yes Figure 30A A modified example of the structure shown is an example in which the conductive layer 117 , the conductive layer 111 b , and the conductive layer 111 c are electrically connected via the conductive layer 119 . Figure 32B yes Figure 32A The cross-sectional view of the dot-dash line B5-B6 in FIG. Figure 32A and Figure 32B In the illustrated example, the conductive layer 119 is provided in the same layer as the conductive layer 115. Therefore, the conductive layer 119 can include the same material as the conductive layer 115 and can be formed by the same process. For example, the conductive layer 115 and the conductive layer 119 can be formed by processing the same conductive film.

[0215] exist Figure 32B In the illustrated example, opening 125b1, which reaches conductive layer 117, is provided in insulating layer 105. Conductive layer 117 and conductive layer 119 are electrically connected within opening 125b1. Specifically, for example, a region of contact between conductive layer 117 and conductive layer 119 exists within opening 125b1. Furthermore, opening 125b2, which reaches conductive layer 111b, is provided in insulating layer 103 and insulating layer 105. Conductive layer 111b and conductive layer 119 are electrically connected within opening 125b2. Specifically, for example, a region of contact between conductive layer 111b and conductive layer 119 exists within opening 125b2. Furthermore, opening 125c, which reaches conductive layer 111c, is provided in insulating layer 103 and insulating layer 105. Conductive layer 111c and conductive layer 119 are electrically connected within opening 125c. Specifically, for example, a region of contact between conductive layer 111c and conductive layer 119 exists within opening 125c.

[0216] As described above, the conductive layer 117, the conductive layer 111b, and the conductive layer 111c can be electrically connected via the conductive layer 119. In a display device according to one embodiment of the present invention, the openings 125b (opening 125b1 and opening 125b2) and the opening 125c can be formed in parallel with the opening 125a and the opening 125d (opening 125d1 and opening 125d2). Figure 32A and Figure 32B In the illustrated example, the conductive layer 119 can also be said to be a connection electrode for electrically connecting the conductive layer 117 , the conductive layer 111 b , and the conductive layer 111 c to each other.

[0217] Figure 33 yes Figure 32A In the example of the modified structure shown in FIG, at least a portion of the transistor 51 is provided in the region where the wiring 41a and the wiring 43 overlap. In addition, at least a portion of the transistor 52 is provided in the region where the wiring 45 extends in the Y direction. In addition, at least a portion of the transistor 53 is provided in the region where the wiring 41b extends in the X direction. Figure 33 In the example shown, Figure 31A and Figure 31B In the illustrated example, the pixel circuit 40C also does not include the conductive layer 131 , and the conductive layer 111 c and the conductive layer 133 are electrically connected inside the opening 125 d .

[0218] Figure 34A yes Figure 30A A modified example of the structure shown is an example in which the conductive layer 131 is provided in the same layer as the conductive layer 111. Figure 34B yes Figure 34A The cross-sectional view along the dotted line B5-B6 is shown. Figure 34A and Figure 34B In the illustrated example, the conductive layer 131 can include the same material and be formed by the same process as the conductive layer 111. For example, the conductive layer 111 and the conductive layer 131 can be formed by processing the same conductive film.

[0219] The insulating layer 103 includes an opening 125d1 and an opening 125d2 that reach the conductive layer 131. Figure 30A and Figure 30B In the illustrated example, conductive layer 112c is electrically connected to conductive layer 131 in opening 125d1, and conductive layer 133 is electrically connected to conductive layer 131 in opening 125d2. Therefore, conductive layer 112c and conductive layer 133 can be electrically connected via conductive layer 131.

[0220] Figure 35A yes Figure 30A A modified example of the structure shown is shown, in which an example is shown in which the conductive layer 131 is provided in the same layer as the pixel electrode 311. Figure 35B yes Figure 35A The cross-sectional view along the dotted line B5-B6 is shown. Figure 35A and Figure 35B In the example shown, the conductive layer 131 can include the same material and be formed by the same process as the pixel electrode 311. For example, the pixel electrode 311 and the conductive layer 131 can be formed by processing the same conductive film.

[0221] The insulating layer 105, the insulating layer 218, and the insulating layer 235 include an opening 125d1 that reaches the conductive layer 112c and an opening 125d2 that reaches the conductive layer 133. Figure 30A and Figure 30B In the illustrated example, conductive layer 112c is electrically connected to conductive layer 131 in opening 125d1, and conductive layer 133 is electrically connected to conductive layer 131 in opening 125d2. Therefore, conductive layer 112c and conductive layer 133 can be electrically connected via conductive layer 131.

[0222] Figure 36 and Figure 37 They are Figure 22A 25 , there is shown an example in which pixel circuits 40C in two adjacent columns share a conductive layer 111 c serving as a wiring 48 . Figure 36 and Figure 37 An example is shown in which the pixel circuit 40C in the j-th column and the pixel circuit 40C in the j+1-th column share the conductive layer 111c. Figure 36 and Figure 37 An example is shown of a case where a region of the conductive layer 111c extending in the Y direction is provided between a region of the conductive layer 112b extending in the Y direction that is electrically connected to the transistor 52 in the pixel circuit 40C provided in the j-th column and a region of the conductive layer 112b extending in the Y direction that is electrically connected to the transistor 52 in the pixel circuit 40C provided in the j+1-th column.

[0223] exist Figure 36 and Figure 37 In the example shown, Figure 22A Compared with the example shown in FIG. 25 , the number of conductive layers 111c provided in the display device of one embodiment of the present invention can be reduced, thereby realizing a high-definition display device. Figure 22A In the example shown in Figure 25, Figure 36 and Figure 37 Compared with the example shown in FIG. 1 , the load on the conductive layer 111 c can be reduced, thereby realizing a display device that can be driven at high speed.

[0224] Figure 38A yes Figure 22A The modified example of the structure shown here shows an example in which the pixel circuits 40C in two adjacent columns share the conductive layer 112b used as the wiring 45. Figure 38B yes Figure 38A The cross-sectional view along the dashed line B5-B6 is shown.

[0225] Figure 38A An example is shown in which the pixel circuit 40C in the j-th column and the pixel circuit 40C in the j+1-th column share the conductive layer 112b. Figure 38A An example is shown of a case where a region of the conductive layer 112b extending in the Y direction is provided between a region of the conductive layer 111c extending in the Y direction and electrically connected to the transistor 53 in the pixel circuit 40C provided in the j-th column and a region of the conductive layer 111c extending in the Y direction and electrically connected to the transistor 53 in the pixel circuit 40C provided in the j+1-th column.

[0226] exist Figure 38A and Figure 38B In the example shown, Figure 22A and Figure 22B Compared to the example shown in FIG. 1 , the number of conductive layers 112b provided in the display device of one embodiment of the present invention can be reduced, thereby realizing a high-definition display device. Figure 22A and Figure 22B In the example shown, Figure 38A and Figure 38B Compared with the example shown in FIG. 1 , the load on the conductive layer 112 b can be reduced, thereby achieving a display device that can be driven at high speed.

[0227] As described above, the conductive layer 111 c may have a region overlapping with the conductive layer 112 b . Figure 38A An example is shown in which a region of the conductive layer 112 b extending in the X direction overlaps a region of the conductive layer 111 c extending in the Y direction.

[0228] Figure 39A It shows Figure 2B FIG. 4 is a plan view of a structural example of a pixel circuit 40C shown in FIG. Figure 39B yes Figure 39A The cross-sectional view along the dotted line B5-B6 in FIG. 1 shows a structural example of the transistor 53 and the capacitor 57, etc. Figure 39A and Figure 39B The structures shown can also be said to be Figure 9A and Figure 10 The following is an example of a modification of the structure shown. Figure 9A and Figure 10 Description of the repeated section.

[0229] exist Figure 39A and Figure 39B In the example shown, the structures of transistors 51, 52, and 53 are the same as those of Figure 3A1 and Figure 3B The structure shown is the same.

[0230] Figure 40A Shown with double-dotted lines Figure 39A The conductive layer 115a, the conductive layer 115b and the conductive layer 115c are shown in a plan view without hatching. Figure 40B Shown with double-dotted lines Figure 40A The semiconductor layer 113a, the semiconductor layer 113b, and the semiconductor layer 113c are shown in a plan view without hatching. Figure 40A and Figure 40B An example of the structure of one pixel circuit 40C is shown.

[0231] The conductive layer 111c is used as one of the source electrode and the drain electrode of the transistor 53. Figure 39A 、 Figure 40A and Figure 40BIt is shown that the same conductive layer 112 b is used as the other of the source electrode and the drain electrode of the transistor 52 , the other of the source electrode and the drain electrode of the transistor 53 , and the other electrode of the capacitor 57 .

[0232] exist Figure 39A and Figure 39B In the example shown in FIG. 1 , the conductive layer 115a is used as the wiring 41a, and the conductive layer 115c is used as the wiring 41b. In addition, the conductive layer 138 is shown as the wiring 48. Figure 2A The reference potential generating circuit 17 shown is electrically connected.

[0233] Insulating layer 103 and insulating layer 105 include opening 125d1 that reaches conductive layer 111c and opening 125d2 that reaches conductive layer 138. Conductive layer 111c and conductive layer 119 are electrically connected through opening 125d1. Conductive layer 138 and conductive layer 119 are electrically connected through opening 125d2. Specifically, for example, a region in contact with conductive layer 111c and conductive layer 119 exists within opening 125d1. Furthermore, a region in contact with conductive layer 138 and conductive layer 119 exists within opening 125d2. As described above, conductive layer 111c and conductive layer 138 can be electrically connected through conductive layer 119. When conductive layer 111c and conductive layer 138 are electrically connected through conductive layer 119, contact between conductive layer 111c and conductive layer 111b, which could cause a short circuit, can be prevented.

[0234] The conductive layer 138 can be provided in the same layer as the conductive layer 111. Alternatively, the conductive layer 119 can be provided in the same layer as the conductive layer 115. Therefore, the conductive layer 138 can include the same material as the conductive layer 111 and can be formed using the same process. Furthermore, the conductive layer 119 can include the same material as the conductive layer 115 and can be formed using the same process. For example, the conductive layer 111 and the conductive layer 138 can be formed by processing the same conductive film. Alternatively, the conductive layer 115 and the conductive layer 119 can be formed by processing the same conductive film.

[0235] exist Figure 39A 、 Figure 40A and Figure 40B In the embodiment, the shapes of the openings 125a, 125d1, and 125d2 when viewed from a plane are circular, but one embodiment of the present invention is not limited thereto and may have the same shape as that of the opening 121 or 123.

[0236] Conductive layer 115a and conductive layer 115c have regions extending in the X direction. Conductive layer 111a, conductive layer 111b, conductive layer 136, and conductive layer 138 have regions extending in the Y direction. Conductive layer 115a and conductive layer 115c have regions overlapping with conductive layer 111a, conductive layer 111b, conductive layer 136, and conductive layer 138. Specifically, a portion of the region extending in the X direction of conductive layer 115a overlaps with a portion of the regions extending in the Y direction of conductive layer 111a, conductive layer 111b, conductive layer 136, and conductive layer 138. Furthermore, a portion of the region extending in the X direction of conductive layer 115c overlaps with a portion of the regions extending in the Y direction of conductive layer 111a, conductive layer 111b, conductive layer 136, and conductive layer 138.

[0237] Here, it can be said that the region of conductive layer 138 extending in the Y direction is used as wiring 48, or it can be said that the entire conductive layer 138 is used as wiring 48. The same applies to conductive layers other than conductive layer 138 having regions used as wiring 48.

[0238] Figure 41A Yes Figure 39A The plan view shown shows an example of a structure in which a pixel electrode 311 of the light-emitting element 60 is added. Figure 41B yes Figure 41A The following mainly describes the cross-sectional view of the dotted line B5-B6. Figure 14 and Figure 15 Different structures, the description of the parts with the same structure is appropriately omitted. Figure 41A in, omit Figure 39A In the following drawings, a part of the symbols may be omitted.

[0239] The insulating layer 105, the insulating layer 218, and the insulating layer 235 include an opening 129 that reaches the conductive layer 112b. A pixel electrode 311 is provided to cover the opening 129. The pixel electrode 311 has a shape that extends along the top and side surfaces of the insulating layer 235, the side surfaces of the insulating layer 218, the side surfaces of the insulating layer 105, and the top surface of the conductive layer 112b. For example, the pixel electrode 311 has a region that contacts the top and side surfaces of the insulating layer 235, the side surfaces of the insulating layer 218, the side surfaces of the insulating layer 105, and the top surface of the conductive layer 112b. The pixel electrode 311 can be electrically connected to the conductive layer 112b within the opening 129.

[0240] Furthermore, the pixel electrode 311 may have an area that overlaps with at least one of the area extending in the X direction of the conductive layer 115a, the area extending in the X direction of the conductive layer 115c, the area extending in the Y direction of the conductive layer 111a, the area extending in the Y direction of the conductive layer 136, and the area extending in the Y direction of the conductive layer 138. This improves the pixel aperture ratio. On the other hand, since the pixel electrode 311 does not overlap with the area extending in the X direction of the conductive layer 115a, the area extending in the X direction of the conductive layer 115c, the area extending in the Y direction of the conductive layer 111a, the area extending in the Y direction of the conductive layer 136, and the area extending in the Y direction of the conductive layer 138, propagation of noise caused by the signal supplied to the conductive layer 115a, the noise caused by the signal supplied to the conductive layer 115c, the noise caused by the signal supplied to the conductive layer 111a, the noise caused by the potential of the conductive layer 136, and the noise caused by the potential of the conductive layer 138 to the pixel electrode 311 can be suppressed.

[0241] Figure 42A yes Figure 5 A modified example of the structure shown is shown, in which the conductive layer 112a is used as the wiring 43. Figure 42B yes Figure 42A The cross-sectional view along the dashed line B9-B10 is shown. Figure 42B An example of the structure of the transistor 51 and the capacitor 57 is shown.

[0242] Figure 43 yes Figure 42A A modified example of the structure shown is an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap, and at least a portion of the transistor 52 is provided in a region where the wiring 45 extends in the Y direction.

[0243] Figure 44 、 Figure 45 and Figure 46 They are Figure 18A 、 Figure 19 and Figure 22A A modified example of the structure shown is shown, in which the conductive layer 112a is used as the wiring 43.

[0244] exist Figure 46 In the example shown, the wiring 48 is provided in a layer different from the wiring 45 and the wiring 43. Figure 22A In the example shown, the wiring 48 is provided in a different layer from the wiring 45, but the wiring 48 is provided in the same layer as the wiring 43. Figure 22A Compared to the example shown, you can make Figure 46In the example shown, the space between the wiring 48 and the wiring 43 is small. Therefore, the pixels can be miniaturized, thereby achieving high definition of the display device of one embodiment of the present invention. Figure 22A In the example shown, in the region where the wiring 41a overlaps with the wiring 43, the insulating layer 105 and the insulating layer 103 are provided between the wiring 41a and the wiring 43. In addition, in the region where the wiring 41b overlaps with the wiring 43, the insulating layer 105 and the insulating layer 103 are provided between the wiring 41b and the wiring 43. Figure 46 Compared to the example shown, you can make Figure 22A In the example shown, the parasitic capacitance between wiring 41a and wiring 43, and the parasitic capacitance between wiring 41b and wiring 43, are small. This shortens the time between when the scan line driver circuit 11 outputs a signal to wiring 41a or wiring 41b and when that signal is supplied to the pixel circuit 40C. Consequently, the display device of one embodiment of the present invention can be driven at high speed.

[0245] Figure 47 yes Figure 46 Modifications of the structure shown in FIG. 1 are shown in which at least a portion of transistor 51 is provided in a region where wiring 41a overlaps wiring 43. Furthermore, an example is shown in which at least a portion of transistor 52 is provided in a region where wiring 45 extends in the Y direction. Furthermore, an example is shown in which at least a portion of transistor 53 is provided in a region where wiring 41b extends in the X direction.

[0246] Figure 48 、 Figure 49 、 Figure 50 and Figure 51 They are Figure 30A 、 Figure 31A 、 Figure 32A and Figure 33 A modified example of the structure shown in FIG. 1 is shown in which the conductive layer 112a is used as the wiring 43. Figure 48 、 Figure 49 、 Figure 50 and Figure 51 In the illustrated example, the wiring 43 , the wiring 45 , and the wiring 48 , each having a region extending in the Y direction, are provided in the same layer.

[0247] Figure 52A yes Figure 9A A modified example of the structure shown is shown, in which the conductive layer 112a is used as the wiring 43. Figure 52B yes Figure 52A The cross-sectional view along the dashed line B9-B10 is shown. Figure 52B An example of the structure of the transistor 51 and the capacitor 57 is shown.

[0248] Figure 53yes Figure 52A A modification example of the structure shown in FIG. 1 shows an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap.

[0249] Figure 54A yes Figure 9A A modified example of the structure shown in FIG. 1 is an example in which a conductive layer 136a is provided in a manner overlapping with the conductive layer 111a and a conductive layer 136b is provided in a manner overlapping with the conductive layer 111b. Here, the conductive layer 136b corresponds to Figure 9A Conductive layer 136 is shown. Figure 54B yes Figure 54A The cross-sectional view along the dashed line B9-B10 is shown.

[0250] exist Figure 54A In the example shown, conductive layer 136a has a region extending in the Y direction, and this region overlaps with the region of conductive layer 111a extending in the Y direction. Furthermore, conductive layer 136b has a region extending in the Y direction, and this region overlaps with the region of conductive layer 111b extending in the Y direction.

[0251] The conductive layer 136a and the conductive layer 136b are provided between the insulating layer 103 and the insulating layer 105. That is, the conductive layer 136a and the conductive layer 136b are provided in the same layer as the conductive layer 112. Therefore, the conductive layer 136a and the conductive layer 136b can include the same material as the conductive layer 112 and can be formed by the same process. For example, the conductive layer 112, the conductive layer 136a, and the conductive layer 136b can be formed by processing the same conductive film.

[0252] The insulating layer 103 includes an opening 126a that reaches the conductive layer 111a and an opening 126b that reaches the conductive layer 111b. Furthermore, the conductive layer 111a is electrically connected to the conductive layer 136a inside the opening 126a, and the conductive layer 111b is electrically connected to the conductive layer 136b inside the opening 126b. Specifically, for example, there is a region inside the opening 126a where the conductive layer 111a is in contact with the conductive layer 136a, and there is a region inside the opening 126b where the conductive layer 111b is in contact with the conductive layer 136b. Here, Figure 54A The opening 126b shown corresponds to Figure 9A The opening 126 is shown.

[0253] exist Figure 54A In the embodiment, although the shapes of the openings 126a and 126b are circular when viewed from a plane, one embodiment of the present invention is not limited thereto. Figure 9AThe opening 126 shown may have the same shape as that shown in FIG. Note that the opening 126a and the opening 126b may be collectively referred to as the opening 126. The conductive layer 136a and the conductive layer 136b may also be collectively referred to as the conductive layer 136.

[0254] The conductive layer 136a is electrically connected to the conductive layer 111a serving as the wiring 43, so the conductive layer 136a also serves as the wiring 43. As described above, the wiring 43 and the conductive layer 111a are electrically connected. Figure 1A The conductive layer 136a is electrically connected to the signal line driver circuit 13 shown. Thus, the conductive layer 136a is electrically connected to the signal line driver circuit 13. Furthermore, the conductive layer 136b is electrically connected to the conductive layer 111b serving as the wiring 45, and thus the conductive layer 136b also serves as the wiring 45. As described above, the wiring 45 is electrically connected to the power supply circuit 15. As described above, the conductive layer 136b is electrically connected to the power supply circuit 15.

[0255] Figure 55 yes Figure 54A A modified example of the structure shown in FIG. 4 shows an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 extends in the X direction. Specifically, Figure 55 An example is shown in which the semiconductor layer 113a, the opening 121a, and the opening 123a are provided in the region where the wiring 41 extends in the X direction. Figure 55 An example is shown in which the semiconductor layer 113 a , the opening 121 a , and the opening 123 a overlap with the region of the conductive layer 115 a extending in the X direction.

[0256] By adopting as the pixel circuit 40A Figure 55 The structure shown is different from the pixel circuit 40A. Figure 54A Compared with the case of the structure shown in FIG. 4 , the pixel can be miniaturized while ensuring the area of ​​the capacitor 57. On the other hand, by adopting Figure 54A The structure shown is different from the pixel circuit 40A. Figure 55 Compared with the case of the illustrated structure, the degree of freedom in the layout of the pixel circuit 40A can be improved.

[0257] Figure 56A yes Figure 9A A modified example of the structure shown in FIG. 1 shows an example in which the conductive layer 111 b and the conductive layer 136 are electrically connected via the conductive layer 139 . Figure 56B yes Figure 56A The cross-sectional view taken along the dashed line B3-B4 in FIG. 1 shows, for example, the conductive layer 136, the conductive layer 139, and the transistor 52. Figure 56A and Figure 56BIn the illustrated example, the conductive layer 139 is provided in the same layer as the conductive layer 115. Therefore, the conductive layer 139 can include the same material as the conductive layer 115 and can be formed by the same process. For example, the conductive layer 115 and the conductive layer 139 can be formed by processing the same conductive film.

[0258] exist Figure 56B In the illustrated example, opening 126_1, which reaches conductive layer 111b, is provided in insulating layer 103 and insulating layer 105. Conductive layer 111b is electrically connected to conductive layer 139 within opening 126_1. Specifically, for example, a region in contact between conductive layer 111b and conductive layer 139 exists within opening 126_1. Furthermore, opening 126_2, which reaches conductive layer 136, is provided in insulating layer 105. Conductive layer 136 is electrically connected to conductive layer 139 within opening 126_2. Specifically, for example, a region in contact between conductive layer 136 and conductive layer 139 exists within opening 126_2.

[0259] As described above, conductive layer 111b and conductive layer 136 can be electrically connected via conductive layer 139. With this structure, the display device of one embodiment of the present invention can form opening 126 (opening 126_1 and opening 126_2) in parallel with opening 125a. Here, for example, conductive layer 139 can also be considered a connection electrode for electrically connecting conductive layer 111b and conductive layer 136.

[0260] Figure 57 yes Figure 56A A modification example of the structure shown in FIG. 1 shows an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap.

[0261] Figure 58 yes Figure 56A A modified example of the structure shown is shown, in which the conductive layer 112a is used as the wiring 43. Figure 59 yes Figure 58 A modification example of the structure shown in FIG. 1 shows an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap. Figure 60 yes Figure 56A A modified example of the structure shown in FIG. Figure 54A As shown in FIG. 1 , the conductive layer 136 a is provided so as to overlap with the conductive layer 111 a , and the conductive layer 136 b is provided so as to overlap with the conductive layer 111 b .

[0262] exist Figure 60In the example shown, conductive layer 111a is electrically connected to conductive layer 136a via conductive layer 139a. Furthermore, conductive layer 111b is electrically connected to conductive layer 136b via conductive layer 139b. Conductive layer 139a and conductive layer 139b are provided in the same layer as conductive layer 115. Therefore, conductive layer 139a and conductive layer 139b can include the same material as conductive layer 115 and can be formed by the same process. For example, conductive layer 115, conductive layer 139a, and conductive layer 139b can be formed by processing the same conductive film. Note that conductive layer 139a and conductive layer 139b may also be collectively referred to as conductive layer 139.

[0263] exist Figure 60 In the example shown, the opening 126a1 that reaches the conductive layer 111a and the opening 126b1 that reaches the conductive layer 111b are provided in the insulating layer 103 and the insulating layer 105. Furthermore, the conductive layer 111a is electrically connected to the conductive layer 139a inside the opening 126a1, and the conductive layer 111b is electrically connected to the conductive layer 139b inside the opening 126b1. Specifically, for example, there is a region in which the conductive layer 111a is in contact with the conductive layer 139a inside the opening 126a1, and there is a region in which the conductive layer 111b is in contact with the conductive layer 139b inside the opening 126b1. In addition, Figure 60 In the example shown, the opening 126a2 that reaches the conductive layer 136a and the opening 126b2 that reaches the conductive layer 136b are provided in the insulating layer 105. Furthermore, the conductive layer 136a is electrically connected to the conductive layer 139a inside the opening 126a2, and the conductive layer 136b is electrically connected to the conductive layer 139b inside the opening 126b2. Specifically, for example, there is a region in which the conductive layer 136a is in contact with the conductive layer 139a inside the opening 126a2, and there is a region in which the conductive layer 136b is in contact with the conductive layer 139b inside the opening 126b2. Note that Figure 60 The insulating layer 103 and the insulating layer 105 are not shown.

[0264] As described above, the conductive layer 111a and the conductive layer 136a can be electrically connected via the conductive layer 139a, and the conductive layer 111b and the conductive layer 136b can be electrically connected via the conductive layer 139b. A display device according to one embodiment of the present invention has such a structure that the opening 126a (opening 126a1 and opening 126a2) and the opening 126b (opening 126b1 and opening 126b2) can be formed in parallel with the opening 125a. Here, for example, the conductive layer 139a can also be said to be a connecting electrode for electrically connecting the conductive layer 111a and the conductive layer 136a. Furthermore, for example, the conductive layer 139b can also be said to be a connecting electrode for electrically connecting the conductive layer 111b and the conductive layer 136b.

[0265] Figure 61 yes Figure 60 A modified example of the structure shown is an example in which at least a portion of the transistor 51 is provided in a region of the conductive layer 115 a serving as the wiring 41 extending in the X direction.

[0266] Figure 62A yes Figure 42A A modified example of the structure shown is shown, in which an example in which a conductive layer 135 is provided in a pixel is shown. Figure 62B yes Figure 62A A cross-sectional view taken along a dashed line C1 - C2 is shown, in which a structural example of the transistor 52 is shown in addition to the conductive layer 135 , for example.

[0267] Conductive layer 135 has a region extending in the X direction and, for example, can be provided so as to have a region located between the region extending in the X direction of conductive layer 115a and conductive layer 115b. Furthermore, conductive layer 135 has a region overlapping conductive layer 112a and conductive layer 112b. Conductive layer 135 can be provided in the same layer as conductive layer 111. Thus, conductive layer 135 can include the same material as conductive layer 111 and can be formed using the same process. For example, conductive layer 111 and conductive layer 135 can be formed by processing the same conductive film.

[0268] exist Figure 62B In the illustrated example, opening 127 reaching conductive layer 135 is provided in insulating layer 103, and conductive layer 135 and conductive layer 112b are electrically connected inside opening 127. Specifically, for example, conductive layer 135 and conductive layer 112b have a contact region inside opening 127.

[0269] exist Figure 62A In the embodiment, although the shape of the opening 127 when viewed from a plane is circular, one embodiment of the present invention is not limited thereto and may have the same shape as that of at least one of the openings 121, 123 and 125.

[0270] A display device as one embodiment of the present invention adopts Figure 62A In the structure shown, in addition to the conductive layer 112b having a region extending in the Y direction, the conductive layer 135 having a region extending in the X direction is also used as the wiring 45 having the function of a power line. Figure 1AThe power supply circuit 15 shown can supply the power supply potential to the transistor 52 via the conductive layer 112b and the conductive layer 135. Therefore, the power supply potential generated by the power supply circuit 15 can be suppressed from decreasing before being supplied to the pixel circuit 40A. In particular, the power supply potential generated by the power supply circuit 15 can be appropriately suppressed from decreasing before being supplied to the pixel circuit 40A having a long wiring distance from the power supply circuit 15. On the other hand, by adopting the display device as one embodiment of the present invention, Figure 42A The structure shown is similar to the Figure 62A Compared with the case of the structure shown, the pixels can be miniaturized.

[0271] Figure 63 yes Figure 62A The modified example of the structure shown is an example in which at least a portion of the transistor 51 is provided in the region where the wiring 41 and the wiring 43 overlap, and at least a portion of the transistor 52 is provided in the region where the wiring 45 extends in the Y direction.

[0272] Figure 64A yes Figure 48 A modified example of the structure shown is shown in which a conductive layer 135 is provided. Figure 64B yes Figure 64A A cross-sectional view taken along a dashed line C3 - C4 in FIG. 1 shows a structural example of the transistor 53 in addition to the conductive layer 135 , for example.

[0273] Conductive layer 135 has a region extending in the X direction and, for example, can be provided so as to have a region between the region extending in the X direction of conductive layer 115a and the region extending in the X direction of conductive layer 115c. Furthermore, conductive layer 135 has a region overlapping with conductive layer 112a, conductive layer 112b, and conductive layer 133. As described above, conductive layer 135 can be provided in the same layer as conductive layer 111.

[0274] exist Figure 64B In the example shown, Figure 62B In the illustrated example, opening 127 reaching conductive layer 135 is provided in insulating layer 103, and conductive layer 135 and conductive layer 112b are electrically connected inside opening 127. Specifically, for example, inside opening 127 there is a region where conductive layer 135 and conductive layer 112b are in contact.

[0275] A display device as one embodiment of the present invention adopts Figure 64A The structure shown can suppress the Figure 2AIn particular, it is possible to appropriately suppress the decrease in the power supply potential generated by the power supply circuit 15 before it is supplied to the pixel circuit 40C having a long wiring distance from the power supply circuit 15. On the other hand, by adopting the display device as one embodiment of the present invention, Figure 48 The structure shown is similar to the Figure 64A Compared with the case of the structure shown, the pixels can be miniaturized.

[0276] Figure 65 yes Figure 64A In the example of the variation of the structure shown in FIG, at least a portion of the transistor 51 is provided in the region where the wiring 41a and the wiring 43 overlap. In addition, at least a portion of the transistor 52 is provided in the region where the wiring 45 extends in the Y direction. In addition, at least a portion of the transistor 53 is provided in the region where the wiring 41b extends in the X direction. Figure 65 In the example shown, Figure 31A Similarly to the example shown, the pixel circuit 40C does not include the conductive layer 131 as a connection electrode, and the conductive layer 111 c and the conductive layer 133 are electrically connected through the opening 125 d .

[0277] Figure 66A yes Figure 62A A modified example of the structure shown is an example in which the conductive layer 112 b and the conductive layer 135 are electrically connected via a conductive layer 137 provided in the same layer as the conductive layer 115 . Figure 66B yes Figure 66A The cross-sectional view of the dot-dash line C1-C2 in FIG. Figure 66A and Figure 66B In the example shown, the conductive layer 137 is provided in the same layer as the conductive layer 115 .

[0278] exist Figure 66B In the illustrated example, opening 127a reaching conductive layer 112b is provided in insulating layer 105, and conductive layer 112b is electrically connected to conductive layer 137 within opening 127a. Specifically, for example, a region in contact between conductive layer 112b and conductive layer 137 exists within opening 127a. Furthermore, opening 127b reaching conductive layer 135 is provided in insulating layer 103 and insulating layer 105, and conductive layer 135 is electrically connected to conductive layer 137 within opening 127b. Specifically, for example, a region in contact between conductive layer 135 and conductive layer 137 exists within opening 127b.

[0279] As described above, the conductive layer 112b and the conductive layer 135 can be electrically connected via the conductive layer 137. With this structure, the display device of one embodiment of the present invention can be formed parallel to the opening 127 (opening 127a and opening 127b). Here, for example, the conductive layer 137 can also be considered a connection electrode for electrically connecting the conductive layer 112b and the conductive layer 135.

[0280] In addition, Figure 66A and Figure 66B In the example shown, Figure 18A and Figure 18B As in the example shown, conductive layer 117 and conductive layer 111b are electrically connected via conductive layer 119. Like conductive layer 137, conductive layer 119 can be provided in the same layer as conductive layer 115. Therefore, conductive layer 119 and conductive layer 137 can include the same material as conductive layer 115 and can be formed using the same process. For example, conductive layer 115, conductive layer 119, and conductive layer 137 can be formed by processing the same conductive film. Here, opening 125b1 provided in insulating layer 105 for electrically connecting conductive layer 117 and conductive layer 119, and opening 125b2 provided in insulating layer 103 and insulating layer 105 for electrically connecting conductive layer 111b and conductive layer 119, can be formed in parallel with opening 127.

[0281] Figure 67 yes Figure 66A The modified example of the structure shown shows an example in which at least a portion of the transistor 51 is provided in the region where the wiring 41 and the wiring 43 overlap, and at least a portion of the transistor 52 is provided in the region where the wiring 45 extends in the Y direction.

[0282] Figure 68A yes Figure 64A A modified example of the structure shown is an example in which the conductive layer 112 b and the conductive layer 135 are electrically connected via a conductive layer 137 provided in the same layer as the conductive layer 115 . Figure 68B yes Figure 68A The cross-sectional view of the dot-dash line C3-C4 in FIG. Figure 68A and Figure 68B In the example shown, the conductive layer 137 is provided in the same layer as the conductive layer 115 .

[0283] exist Figure 68B In the example shown, Figure 66BIn the example shown, opening 127a reaching conductive layer 112b is provided in insulating layer 105, and conductive layer 112b is electrically connected to conductive layer 137 within opening 127a. Furthermore, opening 127b reaching conductive layer 135 is provided in insulating layer 103 and insulating layer 105, and conductive layer 135 is electrically connected to conductive layer 137 within opening 127b.

[0284] In addition, Figure 68A and Figure 68B In the example shown, Figure 32A and Figure 32B As in the example shown, conductive layer 117, conductive layer 111b, and conductive layer 111c are electrically connected via conductive layer 119. Like conductive layer 137, conductive layer 119 can be provided in the same layer as conductive layer 115. Therefore, conductive layer 119 and conductive layer 137 can include the same material as conductive layer 115 and can be formed through the same process. For example, conductive layer 115, conductive layer 119, and conductive layer 137 can be formed by processing the same conductive film. Here, opening 125b1 provided in insulating layer 105 for electrically connecting conductive layer 117 and conductive layer 119, opening 125b2 provided in insulating layer 103 and insulating layer 105 for electrically connecting conductive layer 111b and conductive layer 119, and opening 125c provided in insulating layer 103 and insulating layer 105 for electrically connecting conductive layer 111c and conductive layer 119 can be formed in parallel with opening 127.

[0285] Figure 69 yes Figure 68A In the example of the modified structure shown in FIG, at least a portion of the transistor 51 is provided in the region where the wiring 41a and the wiring 43 overlap. In addition, at least a portion of the transistor 52 is provided in the region where the wiring 45 extends in the Y direction. In addition, at least a portion of the transistor 53 is provided in the region where the wiring 41b extends in the X direction. Figure 69 In the example shown, Figure 31A and Figure 31B In the illustrated example as well, the pixel circuit 40C does not include the conductive layer 131 , and the conductive layer 111 c and the conductive layer 133 are electrically connected inside the opening 125 d .

[0286] In Figures 42 to Figure 69 In the illustrated example, opening 125a is provided in insulating layer 103 and insulating layer 105 so as to reach conductive layer 111a. Conductive layer 111a and conductive layer 115b are electrically connected within opening 125a. Specifically, for example, a region within opening 125a where conductive layer 111a and conductive layer 115b are in contact with each other exists.

[0287] Figure 70A yes Figure 62A A modified example of the structure shown is an example in which the conductive layer 135 is provided in the same layer as the conductive layer 115. Figure 70B yes Figure 70A Cross-sectional view along the dotted line C1-C2 in FIG.

[0288] exist Figure 70B In the example shown, opening 127 reaching conductive layer 112b is provided in insulating layer 105, and conductive layer 112b and conductive layer 135 are electrically connected inside opening 127. Specifically, for example, conductive layer 112b and conductive layer 135 have a contact region inside opening 127.

[0289] exist Figure 70A and Figure 70B In the example shown, Figure 18A and Figure 18B As in the example shown, at least a portion of the conductive layer 111a is used as a wiring 43 having the function of a signal line. In addition, the conductive layer 112a is electrically connected to the conductive layer 115b serving as one electrode of the capacitor 57 and the gate electrode of the transistor 52. Furthermore, the conductive layer 117 is electrically connected to the conductive layer 111b via the conductive layer 119. Like the conductive layer 135, the conductive layer 119 can be provided in the same layer as the conductive layer 115. Therefore, the conductive layer 119 and the conductive layer 135 can contain the same material as the conductive layer 115 and can be formed by the same process. For example, the conductive layer 115, the conductive layer 119, and the conductive layer 135 can be formed by processing the same conductive film. Here, the opening 125b1 and the opening 125b2 can be formed in parallel with the opening 127.

[0290] Figure 71 yes Figure 70A A modified example of the structure shown is an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap, and at least a portion of the transistor 52 is provided in a region where the wiring 45 extends in the Y direction.

[0291] Figure 72 yes Figure 70A A modified example of the structure shown in FIG. 1 is an example in which at least a portion of the conductive layer 112a is used as a wiring 43 having a function as a signal line. Figure 72 In the illustrated example, conductive layer 111a is electrically connected to conductive layer 115b, which serves as one electrode of capacitor 57 and a gate electrode of transistor 52. Specifically, openings 125a are provided in insulating layers 103 and 105, and conductive layer 111a and conductive layer 115b are electrically connected within openings 125a.

[0292] Figure 73 yes Figure 72 The modified example of the structure shown shows an example in which at least a portion of the transistor 51 is provided in the region where the wiring 41 and the wiring 43 overlap, and at least a portion of the transistor 52 is provided in the region where the wiring 45 extends in the Y direction.

[0293] Figure 74A yes Figure 66A A modified example of the structure shown is an example in which the conductive layer 137 is provided in the same layer as the conductive layer 111. Figure 74B yes Figure 74A The cross-sectional view of the dot-dash line C1-C2 in FIG. Figure 74A and Figure 74B In the illustrated example, the conductive layer 137 can include the same material and be formed by the same process as the conductive layer 111. For example, the conductive layer 111 and the conductive layer 137 can be formed by processing the same conductive film.

[0294] exist Figure 74A and Figure 74B In the illustrated example, opening 127a, which reaches conductive layer 137, is provided in insulating layer 103, and conductive layer 137 and conductive layer 112b are electrically connected within opening 127a. Specifically, for example, a region in contact with conductive layer 137 and conductive layer 112b exists within opening 127a. Furthermore, opening 127b, which reaches conductive layer 137, is provided in insulating layer 103 and insulating layer 105, and a region in contact with conductive layer 135 exists within opening 127b. Specifically, for example, a region in contact with conductive layer 137 and conductive layer 135 exists within opening 127b. As described above, conductive layer 112b and conductive layer 135 are electrically connected via conductive layer 137.

[0295] exist Figure 74A and Figure 74B In the example shown, Figure 5 and Figure 6 As in the example shown, conductive layer 111b and conductive layer 117 are electrically connected inside opening 125b, not through conductive layer 119 serving as a connection electrode. Thus, opening 125b can be formed in parallel with opening 127a. Alternatively, opening 125a can be formed in parallel with opening 127b.

[0296] Figure 75 yes Figure 74A The modified example of the structure shown shows an example in which at least a portion of the transistor 51 is provided in the region where the wiring 41 and the wiring 43 overlap, and at least a portion of the transistor 52 is provided in the region where the wiring 45 extends in the Y direction.

[0297] Figure 76yes Figure 74A A modified example of the structure shown in FIG. 1 is an example in which at least a portion of the conductive layer 112a is used as a wiring 43 having a function as a signal line. Figure 76 In the example shown, for example with Figure 72 In the illustrated example as well, the conductive layer 111 a is electrically connected to the conductive layer 115 b .

[0298] Figure 77 yes Figure 76 The modified example of the structure shown shows an example in which at least a portion of the transistor 51 is provided in the region where the wiring 41 and the wiring 43 overlap, and at least a portion of the transistor 52 is provided in the region where the wiring 45 extends in the Y direction.

[0299] Figure 78A yes Figure 66A A modified example of the structure shown, Figure 78A The layer provided with the conductive layer 137 and Figure 66A different. Figure 78A The pixel electrode 311 is shown and the conductive layer 137 is provided in the same layer as the pixel electrode 311. Figure 78A In the example shown, the conductive layer 137 can include the same material as the pixel electrode 311 and can be formed by the same process. For example, the pixel electrode 311 and the conductive layer 137 can be formed by processing the same conductive film. Figure 78B yes Figure 78A A cross-sectional view along the dashed line C1-C2 is shown. Figure 78B Also shown are structural examples of layers above the transistor 52 , for example.

[0300] An insulating layer 218 and an insulating layer 235 on the insulating layer 218 are provided to cover the transistor 51, the transistor 52, and the capacitor 57. The insulating layer 105, the insulating layer 218, and the insulating layer 235 include an opening 129 that reaches the conductive layer 117. For a description of the components provided above the insulating layer 235 and the opening 129, see, for example, Figure 13 Description.

[0301] exist Figure 78B In the illustrated example, opening 127a reaching conductive layer 112b is provided in insulating layer 105, insulating layer 218, and insulating layer 235. Furthermore, opening 127b reaching conductive layer 135 is provided in insulating layer 103, insulating layer 105, insulating layer 218, and insulating layer 235. Openings 127a and 127b can be formed in parallel with opening 129.

[0302] Conductive layer 137 is provided to cover openings 127a and 127b. Conductive layer 137 has a shape that extends along the top and side surfaces of insulating layer 235, the side surfaces of insulating layer 218, the side surfaces of insulating layer 105, the side surfaces of insulating layer 103, the top surface of conductive layer 112b, and the top surface of conductive layer 135. For example, conductive layer 137 has regions that contact the top and side surfaces of insulating layer 235, the side surfaces of insulating layer 218, the side surfaces of insulating layer 105, the side surfaces of insulating layer 103, the top surface of conductive layer 112b, and the top surface of conductive layer 135. Conductive layer 137 can be electrically connected to conductive layer 112b within opening 127a and to conductive layer 135 within opening 127b. Thus, conductive layer 112b and conductive layer 135 can be electrically connected via conductive layer 137.

[0303] The insulating layer 237 can be provided so as to cover the top edge of the conductive layer 137. The provision of the insulating layer 237 can prevent the conductive layer 137 from coming into contact with the pixel electrode 311 and causing a short circuit, for example.

[0304] A recessed portion is formed in conductive layer 137 so as to cover opening 127a and a recessed portion is formed in conductive layer 137 so as to cover opening 127b. Insulating layer 237 is embedded in these recessed portions.

[0305] in addition, Figure 78A and Figure 78B The structure of the opening 127a, the opening 127b and the conductive layer 137 can also be used to Figure 66A and Figure 66B The openings 127a, 127b and the conductive layer 137 shown in the figures other than the above are shown. For example, Figure 66A and Figure 66B The conductive layer 137 shown in the figures other than the above may be provided in the same layer as the pixel electrode, and the opening 127a reaching the conductive layer 112b and the opening 127b reaching the conductive layer 135 may be provided in the insulating layer 218 and the insulating layer 235. Figure 78A and Figure 78B The structure of the conductive layer 137 shown can also be used for the conductive layer 119 and the conductive layer 131. For example, the conductive layer 119 and the conductive layer 131 can be provided in the same layer as the pixel electrode. Figure 78A and Figure 78B The structure of the openings 127a and 127b shown in FIG. 1 , specifically, the structure in which the openings are provided in the insulating layer 218 and the insulating layer 235, can also be used for the opening 125. For example, when the conductive layer 119 is provided in the same layer as the pixel electrode, Figure 78A and Figure 78BThe structures of the openings 127a and 127b shown in the figure can be used for the openings 125b1, 125b2, and 125c. When the conductive layer 131 is provided in the same layer as the pixel electrode, Figure 78A and Figure 78B The structures of the openings 127 a and 127 b shown can be applied to the openings 125 d 1 and 125 d 2 .

[0306] Figure 79A yes Figure 9A A modified example of the structure shown is an example in which the conductive layer 136 has a region extending in the X direction. Figure 79B yes Figure 79A A cross-sectional view taken along a dashed line C1 - C2 is shown, in which a structural example of the transistor 52 is shown in addition to the conductive layer 136 , for example.

[0307] like Figure 79A As shown, the region of conductive layer 136 extending in the X direction can be configured to include a region between the region of conductive layer 115a extending in the X direction and conductive layer 115b. Furthermore, for example, the region of conductive layer 136 extending in the X direction can include a region that overlaps with the region of conductive layer 111a extending in the Y direction, which serves as wiring 43. Here, the area of ​​the region where conductive layer 111b overlaps with conductive layer 136 is larger than the area of ​​the region where conductive layer 111a overlaps with conductive layer 136.

[0308] A display device as one embodiment of the present invention adopts Figure 79A The structure shown is similar to the Figure 9A Compared with the case of the structure shown in FIG. 1 , the resistance of the wiring 45 can be made smaller. Therefore, the power supply potential generated by the power supply circuit 15 can be suppressed from decreasing before being supplied to the pixel circuit 40A. In particular, the power supply potential generated by the power supply circuit 15 can be appropriately suppressed from decreasing before being supplied to the pixel circuit 40A that is long in wiring distance from the power supply circuit 15. On the other hand, by adopting the display device as one embodiment of the present invention, Figure 9A The structure shown is similar to the Figure 79A Compared with the case of the structure shown, the pixels can be miniaturized.

[0309] Figure 80 yes Figure 79A A modification example of the structure shown in FIG. 1 shows an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap.

[0310] Figure 81A yes Figure 79A A modified example of the structure shown, Figure 56AThe example shown is also an example in which the conductive layer 111 b and the conductive layer 136 are electrically connected via the conductive layer 139 . Figure 81B yes Figure 81A Cross-sectional view along the dotted line C1-C2 in FIG.

[0311] Figure 82 yes Figure 81A A modification example of the structure shown in FIG. 1 shows an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap.

[0312] Figure 83A yes Figure 52A The modified example of the structure shown is an example in which the conductive layer 111b has a region extending in the X direction. Figure 83B yes Figure 83A A cross-sectional view along the dashed line C1-C2 is shown.

[0313] like Figure 83A As shown, the region extending in the X direction of conductive layer 111b can be configured to include a region between the region extending in the X direction of conductive layer 115a and conductive layer 115b. Furthermore, for example, the region extending in the X direction of conductive layer 111b can include a region overlapping with the region extending in the Y direction of conductive layer 112a serving as wiring 43. Here, the area of ​​the region where conductive layer 111b overlaps with conductive layer 136 is larger than the area of ​​the region where conductive layer 111b overlaps with conductive layer 112a.

[0314] A display device as one embodiment of the present invention adopts Figure 83A The structure shown is similar to the Figure 52A Compared with the structure shown in FIG. 1 , the resistance of the wiring 45 can be made smaller. Therefore, the voltage drop of the power supply potential generated by the power supply circuit 15 can be suppressed. On the other hand, by adopting the display device as one embodiment of the present invention, Figure 52A The structure shown is similar to the Figure 83A Compared with the case of the structure shown, the pixels can be miniaturized.

[0315] Figure 84 yes Figure 83A A modification example of the structure shown in FIG. 1 shows an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap.

[0316] Figure 85A yes Figure 83A A modified example of the structure shown, Figure 56A The example shown is also an example in which the conductive layer 111 b and the conductive layer 136 are electrically connected via the conductive layer 139 . Figure 85B yes Figure 85ACross-sectional view along the dotted line C1-C2 in FIG.

[0317] Figure 86 yes Figure 85A A modification example of the structure shown in FIG. 1 shows an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap.

[0318] Figure 87A yes Figure 9A A modified example of the structure shown is shown, in which an example in which a conductive layer 135 is provided in a pixel is shown. Figure 87B yes Figure 87A A cross-sectional view along the dashed line C1-C2 is shown.

[0319] Conductive layer 135 has a region extending in the X direction and, for example, can be provided so as to have a region located between the region extending in the X direction of conductive layer 115a and conductive layer 115b. Furthermore, conductive layer 135 has a region overlapping conductive layer 111a, conductive layer 111b, and conductive layer 136. Furthermore, conductive layer 135 can be provided in the same layer as conductive layer 115. Thus, conductive layer 135 can include the same material as conductive layer 115 and can be formed using the same process. For example, conductive layer 115 and conductive layer 135 can be formed by processing the same conductive film.

[0320] exist Figure 87B In the example shown, opening 127 reaching conductive layer 136 is provided in insulating layer 105, and conductive layer 136 and conductive layer 135 are electrically connected inside opening 127. Specifically, for example, conductive layer 136 and conductive layer 135 have a contact region inside opening 127.

[0321] exist Figure 87A In the figure, although the shape of the opening 127 when viewed from a plane is circular, one embodiment of the present invention is not limited thereto and may have the same shape as that of at least one of the openings 121, 123, 125 and 126.

[0322] A display device as one embodiment of the present invention adopts Figure 87A In the structure shown, in addition to the conductive layer 111b and the conductive layer 136 having a region extending in the Y direction, the conductive layer 135 having a region extending in the X direction is also used as the wiring 45 having the function of a power line. Figure 1AThe power supply circuit 15 shown can supply the power supply potential to the transistor 52 via the conductive layer 111b, the conductive layer 136, and the conductive layer 135. Therefore, the resistance of the wiring 45 can be reduced. As a result, the voltage drop of the power supply potential generated by the power supply circuit 15 can be suppressed. On the other hand, by using a display device as one embodiment of the present invention, Figure 9A The structure shown is similar to the Figure 87A Compared with the case of the structure shown, the pixels can be miniaturized.

[0323] Figure 88 yes Figure 87A A modification example of the structure shown in FIG. 1 shows an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap.

[0324] Figure 89 、 Figure 90 、 Figure 91 and Figure 92 They are Figure 52A 、 Figure 53 、 Figure 54A and Figure 55 A modified example of the structure shown in FIG. 1 is shown in which the conductive layer 135 is connected to the conductive layer 135. Figure 87A The example shown also includes an example of a region extending in the X direction.

[0325] Figure 93A and Figure 93B They are Figure 87A and Figure 87B A modified example of the structure shown in FIG. 1 is an example in which the opening 126 reaching the conductive layer 111b is provided in the insulating layer 103 and the insulating layer 105. Figure 93A and Figure 93B In the example shown, conductive layer 111b is electrically connected to conductive layer 135 inside opening 126. Specifically, for example, inside opening 126 there is a region where conductive layer 111b and conductive layer 135 are in contact.

[0326] As described above, the conductive layer 111b and the conductive layer 136 can be electrically connected via the conductive layer 135. Since the display device of one embodiment of the present invention has such a structure, the openings 126 and 127 can be formed in parallel with the opening 125a.

[0327] Figure 94 yes Figure 93A A modification example of the structure shown in FIG. 1 shows an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap.

[0328] Figure 95 、 Figure 96 、 Figure 97 and Figure 98 They are Figure 58 、 Figure 59 、 Figure 60 and Figure 61 A modified example of the structure shown in FIG. Figure 87A In the example shown, the conductive layer 111b and the conductive layer 136 are electrically connected via the conductive layer 135. Figure 97 and Figure 98 In the illustrated example, the opening 126 that reaches the conductive layer 111 b is defined as an opening 126 b , and the conductive layer 111 b and the conductive layer 135 are electrically connected inside the opening 126 b .

[0329] Figure 99A yes Figure 87A A modified example of the structure shown in FIG. 1 shows an example in which the conductive layer 111 b , the conductive layer 136 , and the conductive layer 135 are electrically connected via the conductive layer 139 . Figure 99A 311 is shown, wherein the conductive layer 139 is provided in the same layer as the pixel electrode 311. Figure 99A In the example shown, the conductive layer 139 can include the same material as the pixel electrode 311 and can be formed by the same process. For example, the pixel electrode 311 and the conductive layer 139 can be formed by processing the same conductive film. Figure 99B yes Figure 99A A cross-sectional view along the dashed line C1-C2 is shown. Figure 99B Also shown are structural examples of layers above the transistor 52 , for example.

[0330] An insulating layer 218 and an insulating layer 235 on the insulating layer 218 are provided to cover the transistor 51, the transistor 52, and the capacitor 57. The insulating layer 105, the insulating layer 218, and the insulating layer 235 include an opening 129 that reaches the conductive layer 112b. Components provided above the insulating layer 235 and the opening 129 can be described, for example, with reference to FIG. Figure 15 Description.

[0331] exist Figure 99B In the illustrated example, opening 126_1 reaching conductive layer 111b is provided in insulating layer 103, insulating layer 105, insulating layer 218, and insulating layer 235. Furthermore, opening 126_2 reaching conductive layer 136 is provided in insulating layer 105, insulating layer 218, and insulating layer 235. Furthermore, opening 127 reaching conductive layer 135 is provided in insulating layer 218 and insulating layer 235. Openings 126_1, 126_2, and 127 may be formed in parallel with opening 129.

[0332] Conductive layer 139 is provided to cover opening 126_1, opening 126_2, and opening 127. Conductive layer 139 has a shape that extends along the top and side surfaces of insulating layer 235, the side surfaces of insulating layer 218, the side surfaces of insulating layer 105, the side surfaces of insulating layer 103, the top surface of conductive layer 111 b, the top surface of conductive layer 136, and the top surface of conductive layer 135. For example, conductive layer 139 has regions that contact the top and side surfaces of insulating layer 235, the side surfaces of insulating layer 218, the side surfaces of insulating layer 105, the side surfaces of insulating layer 103, the top surface of conductive layer 111 b, the top surface of conductive layer 136, and the top surface of conductive layer 135. Conductive layer 139 can be electrically connected to conductive layer 111 b within opening 126_1, to conductive layer 136 within opening 126_2, and to conductive layer 135 within opening 127. Thus, the conductive layer 111 b , the conductive layer 136 , and the conductive layer 135 can be electrically connected via the conductive layer 139 .

[0333] The insulating layer 237 may be provided so as to cover the top edge of the conductive layer 139. The provision of the insulating layer 237 can prevent the conductive layer 139 and the pixel electrode 311 from coming into contact with each other and causing a short circuit, for example.

[0334] In the conductive layer 139 , a recess is formed so as to cover the opening 126_1 , a recess is formed so as to cover the opening 126_2 , and a recess is formed so as to cover the opening 127 . The insulating layer 237 is embedded in these recesses.

[0335] in addition, Figure 99A and Figure 99B The conductive layer 139 shown in the figures other than FIG1 may be provided in the same layer as the pixel electrode 311. In this case, the opening 126 is also provided in the insulating layer 218 and the insulating layer 235. Figure 39A and Figure 39B The conductive layer 119 shown may be provided in the same layer as the pixel electrode 311. In this case, the opening 125b and the opening 125c are provided in the insulating layer 218 and the insulating layer 235 as well.

[0336] Figure 100 yes Figure 99A A modification example of the structure shown in FIG. 1 shows an example in which at least a portion of the transistor 51 is provided in a region where the wiring 41 and the wiring 43 overlap.

[0337] Figure 101 、 Figure 102 、 Figure 103 and Figure 104 They are Figure 95 、 Figure 96 、 Figure 97 and Figure 98A modified example of the structure shown. Figure 99A The example shown is similar to the Figures 101 to 104 3 shows an example in which the conductive layer 111b, the conductive layer 136, and the conductive layer 135 are electrically connected via the conductive layer 139 provided in the same layer as the pixel electrode 311. Figures 101 to 104 Pixel electrode 311 is shown in FIG. Figure 103 and Figure 104 In the example shown, the conductive layer 139b, the opening 126b1, and the opening 126b2 correspond to Figure 99A The conductive layer 139, the opening 126_1 and the opening 126_2 are shown.

[0338] <Components of Display Device> The following describes the components included in the display device of this embodiment.

[0339] [Semiconductor layer 113] There are no particular limitations on the semiconductor material that can be used for the semiconductor layer 113. For example, a single-material semiconductor or a compound semiconductor can be used. For example, silicon or germanium can be used as a single-material semiconductor. For example, gallium arsenide and silicon germanium can be used as compound semiconductors. Organic substances having semiconductor properties or metal oxides having semiconductor properties can be used as compound semiconductors. Note that these semiconductor materials may also contain impurities as dopants.

[0340] There are no particular restrictions on the crystallinity of the semiconductor material used for the semiconductor layer 113. An amorphous semiconductor or a crystalline semiconductor (a single crystal semiconductor, a polycrystalline semiconductor, a microcrystalline semiconductor, or a semiconductor having a partially crystalline region) can be used. The use of a crystalline semiconductor is preferred because it can suppress degradation of transistor characteristics.

[0341] Silicon can be used for the semiconductor layer 113. Examples of silicon include single crystal silicon, polycrystalline silicon, microcrystalline silicon, and amorphous silicon. Examples of polycrystalline silicon include low temperature polysilicon (LTPS).

[0342] Transistors using amorphous silicon as the semiconductor layer 113 can be formed on a large glass substrate and can be manufactured at low cost. Transistors using polycrystalline silicon as the semiconductor layer 113 have high field-effect mobility and can be driven at high speed. Furthermore, transistors using microcrystalline silicon as the semiconductor layer 113 have higher field-effect mobility than transistors using amorphous silicon and can be driven at high speed.

[0343] The semiconductor layer 113 preferably includes a metal oxide (oxide semiconductor). Examples of metal oxides that can be used for the semiconductor layer 113 include indium oxide, gallium oxide, and zinc oxide. The metal oxide preferably includes at least indium (In) or zinc (Zn). In addition, the metal oxide preferably includes two or three selected from indium, element M, and zinc. Note that element M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, cobalt, and magnesium. In particular, element M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0344] The semiconductor layer 113 may be made of, for example, indium oxide, indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), indium aluminum zinc oxide (In-Al-Zn oxide, also referred to as IAZO), indium tin zinc oxide (In-Sn-Zn oxide, also referred to as ITZO (registered trademark)), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO), indium gallium tin oxide (In-Ga-Sn oxide, also referred to as IGTO), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), or indium gallium aluminum zinc oxide (In-Ga-Al-Zn oxide, also referred to as IGAZO or IAGZO). Alternatively, indium tin oxide containing silicon may be used. Alternatively, the above-mentioned oxides having an amorphous structure may be used. For example, indium oxide having an amorphous structure or indium tin oxide having an amorphous structure may be used.

[0345] In particular, the element M is preferably one or more selected from gallium, aluminum, yttrium and tin. In particular, the element M is preferably gallium.

[0346] Here, the composition of the metal oxide included in the semiconductor layer 113 has a great influence on the electrical characteristics and reliability of the transistor 50 .

[0347] For example, by increasing the indium content of the metal oxide, a transistor with a high on-state current can be realized.

[0348] When an In-Zn oxide is used as the semiconductor layer 113, a metal oxide in which the atomic ratio of indium is greater than or equal to the atomic ratio of zinc is preferably used. For example, a metal oxide in which the atomic ratio of the metal elements is In:Zn=1:1, In:Zn=2:1, In:Zn=3:1, In:Zn=4:1, In:Zn=5:1, In:Zn=7:1, In:Zn=10:1, or a metal oxide in which the atomic ratio of the metal elements is approximately 1:1 can be used.

[0349] When an In—Sn oxide is used as the semiconductor layer 113, a metal oxide in which the atomic ratio of indium is greater than or equal to the atomic ratio of tin is preferably used. For example, a metal oxide in which the atomic ratio of the metal elements is In:Sn=1:1, In:Sn=2:1, In:Sn=3:1, In:Sn=4:1, In:Sn=5:1, In:Sn=7:1, In:Sn=10:1, or a metal oxide in which the atomic ratio of the metal elements is approximately 1:1 can be used.

[0350] When In-M-Zn oxide is used as the semiconductor layer 113, a metal oxide in which the atomic ratio of indium relative to the atomic number of the metal element is higher than the atomic ratio of the element M can be used. Furthermore, it is more preferable to use a metal oxide in which the atomic ratio of zinc is higher than the atomic ratio of the element M. For example, the semiconductor layer 113 can use a metal oxide in which the atomic ratio of the metal elements is In:M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:3, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, In:M :Zn=6:1:6, In:M:Zn=10:1:3, In:M:Zn=10:1:6, In:M:Zn=10:1:7, In:M:Zn=10:1:8, In:M:Zn=5:2:5, In:M:Zn=10:1:10, In:M:Zn=20:1:10, In:M:Zn=40:1:10 or metal oxides thereof.

[0351] Note that when a plurality of metal elements are included as the element M, the sum of the atomic ratios of the metal elements may be the atomic ratio of the element M. For example, when an In-Ga-Al-Zn oxide containing gallium and aluminum is used as the element M, the sum of the atomic ratio of gallium and the atomic ratio of aluminum may be the atomic ratio of the element M. Furthermore, the atomic ratio of indium, the element M, and zinc is preferably within the above-described range.

[0352] A metal oxide is preferably used in which the ratio of the number of indium atoms to the number of metal atoms in the metal oxide is 30 atomic % or more and 100 atomic % or less, preferably 30 atomic % or more and 95 atomic % or less, more preferably 35 atomic % or more and 95 atomic % or less, more preferably 35 atomic % or more and 90 atomic % or less, more preferably 40 atomic % or more and 90 atomic % or less, more preferably 45 atomic % or more and 90 atomic % or less, more preferably 50 atomic % or more and 80 atomic % or less, more preferably 60 atomic % or more and 80 atomic % or less, and more preferably 70 atomic % or more and 80 atomic % or less. For example, when an In—Ga—Zn oxide is used as the semiconductor layer 113, the ratio of the number of indium atoms to the total number of atoms of indium, the element M, and zinc is preferably within the above range.

[0353] In this specification, etc., the ratio of the number of indium atoms to the number of atoms of a contained metal element may be described as the indium content. The same applies to other metal elements.

[0354] By increasing the indium content of the metal oxide, a transistor with high on-state current can be realized. By using this transistor in a transistor requiring high on-state current, a display device with excellent electrical characteristics can be realized.

[0355] The composition of the metal oxide can be analyzed using, for example, energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), inductively coupled plasma mass spectrometry (ICP-MS), or inductively coupled plasma atomic emission spectrometry (ICP-AES). Alternatively, a combination of the above methods can be used for analysis. Note that the actual content of elements with low content is sometimes different from the content obtained by analysis due to the influence of analysis accuracy. For example, when the content of element M is low, the content of element M obtained by analysis is sometimes lower than the actual content.

[0356] In this specification, etc., the term "nearby composition" includes a range of ±30% of the desired atomic ratio. For example, a composition described as having an atomic ratio of In:M:Zn = 4:2:3 or a composition thereof includes the following: when the atomic ratio of indium is 4, the atomic ratio of M is 1 or more and 3 or less, and the atomic ratio of zinc is 2 or more and 4 or less. Furthermore, a composition described as having an atomic ratio of In:M:Zn = 5:1:6 or a composition thereof includes the following: when the atomic ratio of indium is 5, the atomic ratio of M is greater than 0.1 and 2 or less, and the atomic ratio of zinc is 5 or more and 7 or less. Furthermore, a composition described as having an atomic ratio of In:M:Zn = 1:1:1 or a composition thereof includes the following: when the atomic ratio of indium is 1, the atomic ratio of M is greater than 0.1 and 2 or less, and the atomic ratio of zinc is greater than 0.1 and 2 or less.

[0357] The metal oxide can be formed using sputtering or atomic layer deposition (ALD) as appropriate. Note that when forming the metal oxide using sputtering, the atomic ratio of the target may differ from the atomic ratio of the metal oxide. In particular, the atomic ratio of zinc in the metal oxide may be smaller than the atomic ratio of zinc in the target. Specifically, the atomic ratio of zinc in the metal oxide may be between approximately 40% and 90% of the atomic ratio of zinc in the target.

[0358] Here, we will explain the reliability of transistors. One of the indicators for evaluating the reliability of transistors is the GBT (Gate Bias Temperature) stress test, which involves maintaining an electric field applied to the gate. The PBTS (Positive Bias Temperature Stress) test involves maintaining the gate at a high temperature while applying a positive potential (positive bias) relative to the source and drain potentials, while maintaining the gate at a high temperature. The NBTS (Negative Bias Temperature Stress) test involves maintaining the gate at a high temperature while applying a negative potential (negative bias) relative to the source and drain potentials. Furthermore, the PBTS test and the NBTS test, performed under light irradiation, are referred to as the PBTIS (Positive Bias Temperature Illumination Stress) test and the NBTIS (Negative Bias Temperature Illumination Stress) test, respectively.

[0359] In an n-type transistor, a positive potential is applied to the gate when the transistor is turned on (current flowing). Therefore, the fluctuation of the threshold voltage in the PBTS test is one of the important factors to be considered as an indicator of transistor reliability.

[0360] By using a metal oxide that does not contain gallium or has a low gallium content in the semiconductor layer 113, a transistor with high reliability in response to forward bias can be realized. In other words, a transistor with minimal fluctuation in threshold voltage during PBTS testing can be realized. Furthermore, when using a metal oxide containing gallium, the gallium content is preferably lower than the indium content. This allows for the realization of a highly reliable transistor.

[0361] One of the factors that causes threshold voltage fluctuations during PBTS testing is defect states at or near the interface between the semiconductor layer and the gate insulating layer. The greater the density of defect states, the more pronounced the degradation during PBTS testing. Reducing the gallium content in the region of the semiconductor layer that contacts the gate insulating layer can suppress the generation of these defect states.

[0362] As a reason why the fluctuation of the threshold voltage in the PBTS test can be suppressed by using a metal oxide that does not contain gallium or has a low gallium content as a semiconductor layer, for example, the following can be considered. Gallium contained in the metal oxide is more likely to absorb oxygen than other metal elements (such as indium or zinc). Therefore, it can be inferred that at the interface between the metal oxide containing a large amount of gallium and the gate insulating layer, carrier (here, electron) trap sites are easily generated by bonding between gallium and excess oxygen in the gate insulating layer. Therefore, it can be considered that when a positive potential is applied to the gate, carriers are captured at the interface between the semiconductor layer and the gate insulating layer, and the threshold voltage fluctuates.

[0363] More specifically, when an In—Ga—Zn oxide is used as the semiconductor layer 113, a metal oxide in which the atomic ratio of indium is higher than the atomic ratio of gallium can be used for the semiconductor layer 113. Furthermore, a metal oxide in which the atomic ratio of zinc is higher than the atomic ratio of gallium is more preferably used. In other words, a metal oxide in which the atomic ratio of the metal elements satisfies In>Ga and Zn>Ga is preferably used for the semiconductor layer 113.

[0364] For example, the atomic ratio of metal elements that can be used in the semiconductor layer 113 is In:Ga:Zn=2:1:3, In:Ga:Zn=3:1:2, In:Ga:Zn=4:2:3, In:Ga:Zn=4:2:4.1, In:Ga:Zn=5:1:3, In:Ga:Zn=5:1:6, In:Ga:Zn=5:1:7, In:Ga:Zn=5:1:8, In: Ga:Zn=6:1:6, In:Ga:Zn=10:1:3, In:Ga:Zn=10:1:6, In:Ga:Zn=10:1:7, In:Ga:Zn=10:1:8, In:Ga:Zn=5:2:5, In:Ga:Zn=10:1:10, In:Ga:Zn=20:1:10, In:Ga:Zn=40:1:10 or metal oxides thereof.

[0365] The semiconductor layer 113 preferably uses a metal oxide in which the ratio of the number of atoms of gallium relative to the number of atoms of the metal element contained is higher than 0 atomic % and is less than 50 atomic %, preferably greater than 0.1 atomic % and less than 40 atomic %, more preferably greater than 0.1 atomic % and less than 35 atomic %, more preferably greater than 0.1 atomic % and less than 30 atomic %, more preferably greater than 0.1 atomic % and less than 25 atomic %, more preferably greater than 0.1 atomic % and less than 20 atomic %, more preferably greater than 0.1 atomic % and less than 15 atomic %, more preferably greater than 0.1 atomic % and less than 10 atomic %. By reducing the gallium content in the semiconductor layer, a transistor with high resistance to the PBTS test can be realized. Note that by containing gallium in the metal oxide, it is less likely to generate oxygen vacancies (V O : Oxygen Vacancy) and other effects.

[0366] A metal oxide that does not contain gallium can also be used as the semiconductor layer 113. For example, In-Zn oxide can be used for the semiconductor layer 113. In this case, when the atomic ratio of indium relative to the atomic number of the metal element in the metal oxide is increased, the field effect mobility of the transistor can be improved. On the other hand, when the atomic ratio of zinc relative to the atomic number of the metal element in the metal oxide is increased, the metal oxide has high crystallinity, so the variation of the electrical characteristics of the transistor is suppressed, and the reliability can be improved. In addition, a metal oxide that does not contain gallium and zinc, such as indium oxide, can also be used as the semiconductor layer 113. By using a metal oxide that does not contain gallium, the variation of the threshold voltage in the PBTS test can be made extremely small, especially.

[0367] For example, an oxide containing indium and zinc can be used as the semiconductor layer 113. In this case, for example, a metal oxide having an atomic ratio of the metal elements of In:Zn=2:3, In:Zn=4:1, or a ratio thereof can be used.

[0368] Note that although gallium is typically used as an example in the description, the present invention is also applicable to the case where element M is used instead of gallium. A metal oxide in which the atomic ratio of indium is higher than the atomic ratio of element M is preferably used for the semiconductor layer 113. Furthermore, a metal oxide in which the atomic ratio of zinc is higher than the atomic ratio of element M is preferably used.

[0369] A transistor having high reliability under forward bias can be realized by using a metal oxide having a low content of the element M as the semiconductor layer 113. Using this transistor as a transistor requiring high reliability under forward bias can realize a highly reliable display device.

[0370] Next, the reliability of transistors with respect to light will be described.

[0371] Light incident on a transistor can sometimes cause changes in its electrical characteristics. It is particularly desirable that transistors used in areas where light is likely to enter exhibit minimal changes in their electrical characteristics under light irradiation and exhibit high reliability against light. Reliability against light can be evaluated, for example, by measuring the fluctuation in threshold voltage during NBTIS testing.

[0372] By increasing the content of the element M in the metal oxide, a transistor with high reliability against light can be realized. In other words, a transistor with small fluctuations in threshold voltage during NBTIS testing can be realized. Specifically, a metal oxide in which the atomic ratio of the element M is greater than or equal to the atomic ratio of indium has a larger band gap, which can reduce the fluctuations in threshold voltage during NBTIS testing of the transistor. The band gap of the metal oxide included in the semiconductor layer 113 is preferably greater than or equal to 2.0 eV, more preferably greater than or equal to 2.5 eV, more preferably greater than or equal to 3.0 eV, more preferably greater than or equal to 3.2 eV, more preferably greater than or equal to 3.3 eV, more preferably greater than or equal to 3.4 eV, and more preferably greater than or equal to 3.5 eV.

[0373] For example, the semiconductor layer 113 can use a metal oxide having an atomic ratio of metal elements of In:M:Zn=1:1:1, In:M:Zn=1:1:1.2, In:M:Zn=1:3:2, In:M:Zn=1:3:3, In:M:Zn=1:3:4 or a ratio thereof.

[0374] The semiconductor layer 113 can particularly appropriately use the following metal oxide: the ratio of the number of atoms of element M to the number of atoms of the metal element contained is greater than 20 atomic % and less than 70 atomic %, preferably greater than 30 atomic % and less than 70 atomic %, more preferably greater than 30 atomic % and less than 60 atomic %, more preferably greater than 40 atomic % and less than 60 atomic %, and more preferably greater than 50 atomic % and less than 60 atomic %.

[0375] When an In—Ga—Zn oxide is used as the semiconductor layer 113, a metal oxide in which the atomic ratio of indium to the atomic number of the metal element is less than or equal to the atomic ratio of gallium can be used. For example, a metal oxide in which the atomic ratio of the metal elements is In:Ga:Zn=1:1:1, In:Ga:Zn=1:1:1.2, In:Ga:Zn=1:3:2, In:Ga:Zn=1:3:3, In:Ga:Zn=1:3:4, or a metal oxide in a range thereof can be used.

[0376] The semiconductor layer 113 can particularly appropriately use the following metal oxide: the ratio of the number of atoms of gallium to the number of atoms of the metal element contained is greater than 20 atomic % and less than 60 atomic %, preferably greater than 20 atomic % and less than 50 atomic %, more preferably greater than 30 atomic % and less than 50 atomic %, more preferably greater than 40 atomic % and less than 60 atomic %, and more preferably greater than 50 atomic % and less than 60 atomic %.

[0377] A transistor with high reliability against light can be realized by using a metal oxide having a high content of the element M for the semiconductor layer 113. Using this transistor as a transistor that needs to have high reliability against light can realize a highly reliable display device.

[0378] As described above, the electrical characteristics and reliability of the transistor vary depending on the composition of the metal oxide used for the semiconductor layer 113. Therefore, by varying the composition of the metal oxide according to the electrical characteristics and reliability required of the transistor, a display device having both excellent electrical characteristics and high reliability can be achieved.

[0379] The semiconductor layer 113 may also have a stacked structure including two or more metal oxide layers. The two or more metal oxide layers included in the semiconductor layer 113 may also have the same or substantially the same composition. By adopting a stacked structure of metal oxide layers with the same composition, for example, the same sputtering target can be used for formation, thereby reducing manufacturing costs.

[0380] The two or more metal oxide layers included in the semiconductor layer 113 may have different compositions. For example, a stacked structure may be suitably used, comprising a first metal oxide layer having an atomic ratio of In:M:Zn = 1:3:4 or approximately thereabouts, and a second metal oxide layer having an atomic ratio of In:M:Zn = 1:1:1 or approximately thereabouts, disposed on the first metal oxide layer. Furthermore, gallium or aluminum is particularly preferably used as the element M. For example, a stacked structure may be used, comprising any one selected from indium oxide, indium gallium oxide, and IGZO, or any one selected from IAZO, IAGZO, and ITZO (registered trademark).

[0381] A crystalline metal oxide layer is preferably used as the semiconductor layer 113. For example, a metal oxide layer having a CAAC (c-axis aligned crystal) structure, a polycrystalline structure, or a nanocrystalline (nc) structure can be used. Using a crystalline metal oxide layer for the semiconductor layer 113 can reduce the defect state density in the semiconductor layer 113, thereby achieving a highly reliable display device.

[0382] The higher the crystallinity of the metal oxide layer used for the semiconductor layer 113, the lower the defect state density in the semiconductor layer 113. On the other hand, by using a metal oxide layer with low crystallinity, a transistor capable of passing a large current can be realized.

[0383] When forming a metal oxide layer using a sputtering method, the higher the substrate temperature (stage temperature) during formation, the more crystalline the metal oxide layer can be formed. In addition, the higher the flow rate ratio of the oxygen gas relative to the total deposition gas used during formation (also known as the oxygen flow rate ratio), the more crystalline the metal oxide layer can be formed.

[0384] The semiconductor layer 113 may also have a stacked structure of two or more metal oxide layers having different crystallinity. For example, it may have a stacked structure of a first metal oxide layer and a second metal oxide layer provided on the first metal oxide layer, and the second metal oxide layer may include a region having higher crystallinity than the first metal oxide layer. Alternatively, the second metal oxide layer may include a region having lower crystallinity than the first metal oxide layer. The compositions of the two or more metal oxide layers included in the semiconductor layer 113 may also be the same or substantially the same as each other. By adopting a stacked structure of metal oxide layers having the same composition, for example, the same sputtering target can be used to form them, thereby reducing manufacturing costs. For example, by using the same sputtering target and making different oxygen flow ratios, a stacked structure of two or more metal oxide layers having different crystallinity can be formed. Note that the compositions of the two or more metal oxide layers included in the semiconductor layer 113 may also be different from each other.

[0385] The thickness of the semiconductor layer 113 is preferably greater than 3 nm and less than 100 nm, more preferably greater than 5 nm and less than 100 nm, more preferably greater than 10 nm and less than 100 nm, more preferably greater than 10 nm and less than 70 nm, more preferably greater than 15 nm and less than 70 nm, more preferably greater than 15 nm and less than 50 nm, more preferably greater than 20 nm and less than 50 nm, more preferably greater than 20 nm and less than 40 nm, more preferably greater than 25 nm and less than 40 nm.

[0386] The substrate temperature during formation of the semiconductor layer 113 is preferably room temperature (25° C.) to 200° C., more preferably room temperature to 130° C. By setting the substrate temperature within this range, warping or distortion of the substrate can be suppressed when a large-area glass substrate is used.

[0387] Here, oxygen vacancies that may be formed in the semiconductor layer 113 are described.

[0388] When an oxide semiconductor is used for the semiconductor layer 113, hydrogen in the oxide semiconductor reacts with oxygen bonded to a metal atom to form water, thereby forming oxygen vacancies (V O ). In addition, sometimes hydrogen enters the defect in the oxygen vacancy (hereinafter referred to as V O H) is used as a donor to generate electrons as carriers. In addition, sometimes due to the bonding of a portion of hydrogen to oxygen bonded to the metal atom, electrons as carriers are generated. Therefore, transistors using oxide semiconductors containing a large amount of hydrogen tend to have a normally-on characteristic. In addition, because the hydrogen in the oxide semiconductor is easily moved due to heat or electric field, when the oxide semiconductor contains a large amount of hydrogen, the reliability of the transistor may be reduced.

[0389] V O H can be used as a donor in oxide semiconductors. However, it is difficult to quantitatively evaluate this defect. Therefore, in oxide semiconductors, evaluation is sometimes performed based on carrier concentration rather than donor concentration. Therefore, in this specification, etc., as a parameter of an oxide semiconductor, instead of donor concentration, the carrier concentration in a state where no electric field is applied is sometimes used. In other words, the "carrier concentration" described in this specification, etc. may sometimes be referred to as the "donor concentration."

[0390] Therefore, when an oxide semiconductor is used as the semiconductor layer 113, it is preferable to minimize the V O H to make it high purity intrinsic or substantially high purity intrinsic. In order to obtain this V OFor an oxide semiconductor with sufficiently reduced H, it is important to: remove impurities such as water and hydrogen in the oxide semiconductor (sometimes referred to as dehydration or dehydrogenation treatment); and supply oxygen to the oxide semiconductor to repair oxygen vacancies (V O ). By setting V O Oxide semiconductors with sufficiently reduced impurities such as H are used in the channel formation region of transistors to provide stable electrical characteristics. Note that oxygen is sometimes supplied to the oxide semiconductor to repair oxygen vacancies (V O ) is recorded as oxidation treatment.

[0391] When an oxide semiconductor is used as the semiconductor layer 113, the carrier concentration of the oxide semiconductor in a region serving as a channel formation region is preferably 1×10 18 cm -3 less than 1×10 17 cm -3 , more preferably less than 1×10 16 cm -3 , more preferably less than 1×10 13 cm -3 , more preferably less than 1×10 12 cm -3 Note that the lower limit of the carrier concentration of the oxide semiconductor in the region serving as the channel formation region is not particularly limited, and can be set to, for example, 1×10 -9 cm -3 .

[0392] The semiconductor layer 113 may also include a layered material that functions as a semiconductor. Layered materials are a general term for a group of materials having a layered crystal structure. A layered crystal structure is a structure in which layers formed by covalent or ionic bonds are stacked together through bonds weaker than covalent or ionic bonds, such as van der Waals forces. Layered materials have high conductivity per unit layer, that is, high two-dimensional conductivity. By using a material that functions as a semiconductor and has high two-dimensional conductivity in the channel formation region, a transistor with high on-state current can be provided.

[0393] Examples of the layered material include graphene, silicene, and chalcogenides. Chalcogenides are compounds containing oxygen group elements (elements belonging to Group 16). In addition, examples of chalcogenides include transition metal chalcogenides and Group 13 chalcogenides. Examples of transition metal chalcogenides that can be used as semiconductor layers of transistors include molybdenum sulfide (typically MoS2), molybdenum selenide (typically MoSe2), molybdenum telluride (typically MoTe2), tungsten sulfide (typically WS2), tungsten selenide (typically WSe2), tungsten telluride (typically WTe2), hafnium sulfide (typically HfS2), hafnium selenide (typically HfSe2), zirconium sulfide (typically ZrS2), and zirconium selenide (typically ZrSe2).

[0394] [Insulation layer 103] An inorganic insulating material or an organic insulating material can be used for the insulating layer 103. The insulating layer 103 may have a stacked-layer structure of an inorganic insulating material and an organic insulating material.

[0395] An inorganic insulating material can be used as appropriate for the insulating layer 103. As the inorganic insulating material, one or more of oxides, oxynitrides, oxynitrides, and nitrides can be used. For example, one or more of silicon oxide, silicon oxynitride, aluminum oxide, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, silicon nitride, silicon oxynitride, and aluminum nitride can be used for the insulating layer 103.

[0396] Note that in this specification and other documents, "oxynitride" refers to a material containing more oxygen than nitrogen. "Oxynitride" refers to a material containing more nitrogen than oxygen. For example, "silicon oxynitride" refers to a material containing more oxygen than nitrogen, while "silicon oxynitride" refers to a material containing more nitrogen than oxygen.

[0397] For example, oxygen and nitrogen content can be analyzed using analytical methods such as secondary ion mass spectrometry (SIMS) or X-ray photoelectron spectroscopy (XPS). XPS is preferred when the target element content is high (e.g., 0.5 atomic% or higher or 1 atomic% or higher). On the other hand, SIMS is preferred when the target element content is low (e.g., 1 atomic% or lower or 0.5 atomic% or lower). When comparing elemental contents, a combined analysis using both SIMS and XPS is more preferred.

[0398] The insulating layer 103 may have a stacked structure with two or more layers. In the cross-sectional view illustrating the structural example of the transistor 50, the insulating layer 103 has a stacked structure including an insulating layer 103a and an insulating layer 103b on the insulating layer 103a. The insulating layer 103a and the insulating layer 103b may use the materials that can be used for the insulating layer 103 described above. Note that the insulating layer 103a and the insulating layer 103b may be made of the same material or different materials. Note that the insulating layer 103a may have a stacked structure with two or more layers. The insulating layer 103b may also have a stacked structure with two or more layers.

[0399] The thickness of the insulating layer 103a can be greater than that of the insulating layer 103b. The deposition speed (also referred to as deposition rate) of the insulating layer 103a is preferably faster, for example, faster than the deposition speed of the insulating layer 103b. In particular, when the thickness of the insulating layer 103a is greater, the deposition speed of the insulating layer 103a is preferably faster. By increasing the deposition speed of the insulating layer 103a, productivity can be improved. For example, increasing the power used during the formation of the insulating layer 103a can increase the deposition speed.

[0400] The stress of the insulating layer 103a is preferably small. When the insulating layer 103a is thick, the stress of the insulating layer 103a is large, which may cause substrate warping. By reducing the stress of the insulating layer 103a, the occurrence of process problems caused by stress such as substrate warping can be suppressed.

[0401] Insulating layer 103b functions as a barrier layer to prevent gas from escaping from insulating layer 103a. Insulating layer 103b is preferably made of a material that does not readily diffuse gas. Insulating layer 103b preferably includes a region with a higher film density than insulating layer 103a. Increasing the film density of insulating layer 103b can improve barrier properties. For example, insulating layer 103b can be made of a material containing more nitrogen than insulating layer 103a. Increasing the nitrogen content of insulating layer 103b can further improve barrier properties.

[0402] The insulating layer 103b only needs to have a thickness sufficient to function as a barrier layer to suppress gas escape from the insulating layer 103a, and can be thinner than the insulating layer 103a. The deposition rate of the insulating layer 103b is preferably slow, for example, slower than the deposition rate of the insulating layer 103a. Slowing the deposition rate of the insulating layer 103b increases the film density of the insulating layer 103b, thereby improving the barrier properties. Furthermore, increasing the substrate temperature during deposition of the insulating layer 103b increases the film density of the insulating layer 103b, thereby improving the barrier properties.

[0403] The film density can be evaluated, for example, using Rutherford backscattering spectroscopy (RBS) or X-ray reflectometry (XRR). In addition, the difference in film density can sometimes be evaluated using a cross-sectional transmission electron microscope (TEM) image. In TEM observation, the transmission electron (TE) image is darker (darker) when the film density is high, and the transmission electron (TE) image is lighter (brighter) when the film density is low. Therefore, in the transmission electron (TE) image, the insulating layer 103b sometimes appears as a darker (darker) image compared to the insulating layer 103a. Note that even if the insulating layer 103a and the insulating layer 103b use the same material, their film densities are different, so sometimes their boundary can be observed as a difference in contrast in the cross-sectional TEM image.

[0404] The insulating layer 103b may include a region where the hydrogen concentration in the film is lower than that in the insulating layer 103a. The difference in hydrogen concentration between the insulating layer 103a and the insulating layer 103b can be evaluated by, for example, secondary ion mass spectrometry (SIMS).

[0405] Here, the insulating layer 103 is described in detail by taking a structure in which the semiconductor layer 113 is made of metal oxide as an example.

[0406] When an oxide semiconductor is used for the semiconductor layer 113 , an inorganic insulating material can be appropriately used for both the insulating layer 103 a and the insulating layer 103 b .

[0407] The insulating layer 103a is preferably made of oxide or oxynitride. A film that releases oxygen by heating is preferably used for the insulating layer 103a. For example, silicon oxide or silicon oxynitride can be suitably used for the insulating layer 103a.

[0408] Oxygen is released through the insulating layer 103a, and oxygen can be supplied from the insulating layer 103a to the semiconductor layer 113. By supplying oxygen from the insulating layer 103a to the semiconductor layer 113, particularly to the channel formation region of the semiconductor layer 113, oxygen vacancies (V O ) and V O H. As a result, the transistor 50 can exhibit good electrical characteristics and high reliability. The insulating layer 103a preferably has a high oxygen diffusion coefficient. By increasing the oxygen diffusion coefficient of the insulating layer 103a, oxygen easily diffuses into the insulating layer 103a, and oxygen can be efficiently supplied from the insulating layer 103a to the semiconductor layer 113. Note that as a treatment for supplying oxygen to the semiconductor layer 113, heat treatment in an atmosphere containing oxygen and plasma treatment in an atmosphere containing oxygen are also available.

[0409] It is preferable that the amount of impurities (for example, water and hydrogen) released from the insulating layer 103a itself is small. By reducing the amount of impurities released from the insulating layer 103a, diffusion of impurities into the semiconductor layer 113 can be suppressed. As a result, the transistor 50 can exhibit good electrical characteristics and high reliability.

[0410] The insulating layer 103a can be appropriately formed of, for example, silicon oxide or silicon oxynitride using a plasma enhanced chemical vapor deposition (PECVD) method. In this case, a mixed gas of a silicon-containing gas and an oxygen-containing gas is preferably used as the source gas. As the silicon-containing gas, for example, one or more of silane, disilane, trisilane, and fluorinated silane can be used. As the oxygen-containing gas, for example, one or more of oxygen (O2), ozone (O3), nitrous oxide (N2O), nitric oxide (NO), and nitrogen dioxide (NO2) can be used. Note that by increasing the power when forming the insulating layer 103a, the amount of impurities (for example, water and hydrogen) released from the insulating layer 103a can be reduced.

[0411] The insulating layer 103b is preferably not easily permeable to oxygen. The insulating layer 103b serves as a barrier layer that prevents oxygen from escaping from the insulating layer 103a. Furthermore, the insulating layer 103b is preferably not easily permeable to hydrogen. The insulating layer 103b serves as a barrier layer that prevents hydrogen from diffusing from the outside of the transistor through the insulating layer 103 into the semiconductor layer 113. The film density of the insulating layer 103b is preferably high. Increasing the film density of the insulating layer 103b can improve the barrier properties to oxygen and hydrogen. The film density of the insulating layer 103b is preferably higher than that of the insulating layer 103a. When silicon oxide or silicon oxynitride is used as the insulating layer 103a, silicon nitride, silicon nitride oxide, or aluminum oxide can be used as appropriate for the insulating layer 103b. The insulating layer 103b preferably includes a region having a higher nitrogen content than the insulating layer 103a. For example, a material having a higher nitrogen content than the insulating layer 103a can be used for the insulating layer 103b. A nitride or nitride oxide is preferably used for the insulating layer 103b. For the insulating layer 103 b , for example, silicon nitride or silicon nitride oxide can be appropriately used.

[0412] When oxygen contained in the insulating layer 103a diffuses upward from a region of the insulating layer 103a that is not in contact with the semiconductor layer 113 (for example, the top surface of the insulating layer 103a), the amount of oxygen supplied from the insulating layer 103a to the semiconductor layer 113 may decrease. By providing the insulating layer 103b on the insulating layer 103a, diffusion of oxygen contained in the insulating layer 103a from the region of the insulating layer 103a that is not in contact with the semiconductor layer 113 can be suppressed. Therefore, the amount of oxygen supplied from the insulating layer 103a to the semiconductor layer 113 is increased, and thus oxygen vacancies (V O ) and V OH. Therefore, the transistor 50 can be a transistor having good electrical characteristics and high reliability.

[0413] Oxygen contained in the insulating layer 103a may cause the conductive layer 112 to be oxidized, thereby increasing the resistance. In addition, oxygen contained in the insulating layer 103a may cause the conductive layer 112 to be oxidized, thereby reducing the amount of oxygen supplied from the insulating layer 103a to the semiconductor layer 113. By providing the insulating layer 103b on the insulating layer 103a, oxidation of the conductive layer 112 and an increase in resistance can be suppressed. At the same time, the amount of oxygen supplied from the insulating layer 103a to the semiconductor layer 113 is increased, and the oxygen vacancies (V in the semiconductor layer 113) can be reduced. O ) and V O H. Thus, the transistor 50 can exhibit good electrical characteristics and be a highly reliable transistor.

[0414] When hydrogen diffuses into the semiconductor layer 113, it may react with oxygen atoms contained in the oxide semiconductor to form water, thereby forming oxygen vacancies (V O ). In addition, sometimes V O By providing the insulating layer 103b on the insulating layer 103a, the oxygen vacancies (V O ) and V O H. Thus, the transistor 50 can exhibit good electrical characteristics and be a highly reliable transistor.

[0415] The insulating layer 103b preferably has a thickness that serves as a barrier layer for oxygen and hydrogen. When the thickness of the insulating layer 103b is small, the function as a barrier layer is sometimes reduced. On the other hand, when the thickness of the insulating layer 103b is large, the region of the semiconductor layer 113 in contact with the insulating layer 103a becomes narrower, and sometimes the amount of oxygen supplied from the insulating layer 103a to the semiconductor layer 113 becomes less. The thickness of the insulating layer 103b may also be smaller than the thickness of the insulating layer 103a. The thickness of the insulating layer 103b is preferably greater than or equal to 5 nm and less than or equal to 100 nm, more preferably greater than or equal to 5 nm and less than or equal to 70 nm, more preferably greater than or equal to 10 nm and less than or equal to 70 nm, more preferably greater than or equal to 10 nm and less than or equal to 50 nm, more preferably greater than or equal to 20 nm and less than or equal to 50 nm, more preferably greater than or equal to 20 nm and less than or equal to 40 nm. By making the thickness of the insulating layer 103b within the above range, oxygen vacancies (V O ) and V O H. Therefore, the transistor 50 can be a transistor having good electrical characteristics and high reliability.

[0416] It is preferable that the amount of impurities (for example, water and hydrogen) released from the insulating layer 103b itself is small. By reducing the amount of impurities released from the insulating layer 103b, diffusion of impurities into the semiconductor layer 113 can be suppressed. As a result, the transistor 50 can exhibit good electrical characteristics and high reliability.

[0417] In the transistor 50, a region of the semiconductor layer 113 in contact with the insulating layer 103 can be used as a channel formation region. That is, oxygen is selectively supplied to the channel formation region, thereby reducing oxygen vacancies (V O ) and V O H. Therefore, the transistor 50 can be a transistor having good electrical characteristics and high reliability.

[0418] [Conductive layer 111, conductive layer 112, and conductive layer 115] The conductive layers 111 and 112 serving as source or drain electrodes, and the conductive layer 115 serving as the gate electrode can each be formed using one or more of chromium, copper, aluminum, magnesium, gold, silver, zinc, molybdenum, tantalum, titanium, tungsten, manganese, nickel, iron, cobalt, molybdenum, and niobium, or an alloy containing one or more of the foregoing metals. For the conductive layers 111, 112, and 115, a low-resistance conductive material containing one or more of copper, silver, gold, and aluminum can be used as appropriate. In particular, copper or aluminum is preferred due to its advantages in mass production.

[0419] Metal oxides (also referred to as oxide conductors) can be used for the conductive layers 111, 112, and 115. Examples of oxide conductors (OC) include In-Sn oxide (ITO), In-W oxide, In-W-Zn oxide, In-Ti oxide, In-Ti-Sn oxide, In-Zn oxide, In-Sn-Si oxide (ITSO), and In-Ga-Zn oxide.

[0420] Here, we will explain oxide conductors (OCs). For example, oxygen vacancies form in a metal oxide with semiconductor properties. Hydrogen is added to these oxygen vacancies, creating donor energy levels near the conduction band. As a result, the conductivity of the metal oxide increases, making it a conductor. Metal oxides that can function as conductors are called oxide conductors.

[0421] The conductive layers 111, 112, and 115 may each have a stacked structure of a conductive layer containing the aforementioned oxide conductor (metal oxide) and a conductive layer containing a metal or an alloy. Using a conductive layer containing a metal or an alloy can reduce wiring resistance.

[0422] A Cu-X alloy (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti) can also be applied to the conductive layers 111, 112, and 115. The use of a Cu-X alloy allows processing by a wet etching process, thereby reducing manufacturing costs.

[0423] Note that the conductive layer 111 , the conductive layer 112 , and the conductive layer 115 can use the same material or different materials.

[0424] Here, the conductive layer 111 and the conductive layer 112 are specifically described by taking a structure in which a metal oxide is used as the semiconductor layer 113 as an example.

[0425] When an oxide semiconductor is used as the semiconductor layer 113, the conductive layers 111 and 112 may be oxidized by oxygen contained in the semiconductor layer 113, thereby increasing the resistance. The conductive layers 111 and 112 may be oxidized by oxygen contained in the insulating layer 103a, thereby increasing the resistance. In addition, the conductive layers 111 and 112 may be oxidized by oxygen contained in the semiconductor layer 113, thereby increasing the resistance. O The conductive layer 111 and the conductive layer 112 are oxidized by oxygen contained in the insulating layer 103a, and the amount of oxygen supplied from the insulating layer 103a to the semiconductor layer 113 may decrease.

[0426] Conductive layer 111 and conductive layer 112 are preferably made of a material that is not easily oxidized. Conductive layer 111 and conductive layer 112 are preferably made of an oxide conductor. For example, In-Sn oxide (ITO) or In-Sn-Si oxide (ITSO) can be used appropriately. Nitride conductors can also be used for conductive layer 111 and conductive layer 112. Examples of nitride conductors include tantalum nitride and titanium nitride. Conductive layer 111 and conductive layer 112 can also have a stacked structure of the above materials.

[0427] By using a material that is not easily oxidized for the conductive layer 111 and the conductive layer 112, an increase in resistance due to oxidation of oxygen contained in the semiconductor layer 113 or oxygen contained in the insulating layer 103a can be suppressed. O ) is suppressed while the amount of oxygen supplied from the insulating layer 103a to the semiconductor layer 113 is increased. Therefore, the oxygen vacancies (V O ) and V O H. Thus, the transistor 50 can exhibit good electrical characteristics and high reliability. Note that the conductive layer 111 and the conductive layer 112 can be formed using the same material or different materials.

[0428] [Insulation layer 105] The insulating layer 105 serving as a gate insulating layer preferably has a low defect density. When the defect density of the insulating layer 105 is low, a transistor exhibiting good electrical characteristics can be realized. Furthermore, the insulating layer 105 preferably has a high dielectric strength voltage. Due to the high dielectric strength voltage of the insulating layer 105, the transistor 50 can be a highly reliable transistor.

[0429] The insulating layer 105 can be made of, for example, one or more of an insulating oxide, oxynitride, oxynitride, and nitride. The insulating layer 105 can be made of, for example, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, aluminum nitride, hafnium oxide, hafnium oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, and Ga—Zn oxide. The insulating layer 105 can be a single layer or a stacked layer. For example, the insulating layer 105 can have a stacked structure of oxides and nitrides.

[0430] Note that in micro transistors, when the thickness of the gate insulating layer is small, leakage current sometimes increases. By using a material with a high relative dielectric constant (also called a high-k material) for the gate insulating layer, it is possible to achieve a lower voltage when driving the transistor while maintaining the physical thickness. Examples of high-k materials include gallium oxide, hafnium oxide, zirconium oxide, oxides containing aluminum and hafnium, oxynitrides containing aluminum and hafnium, oxides containing silicon and hafnium, oxynitrides containing silicon and hafnium, and nitrides containing silicon and hafnium.

[0431] It is preferable that a small amount of impurities (for example, water and hydrogen) is released from the insulating layer 105 itself. Since a small amount of impurities is released from the insulating layer 105, diffusion of impurities into the semiconductor layer 113 can be suppressed. As a result, the transistor 50 can exhibit good electrical characteristics and high reliability.

[0432] Since the insulating layer 105 is formed on the semiconductor layer 113, it is preferably formed under conditions that minimize damage to the semiconductor layer 113. For example, it can be formed under conditions with a sufficiently slow deposition rate, specifically, a deposition rate slower than that of the insulating layer 103b. For example, when forming the insulating layer 105 using PECVD, forming it under low power conditions can minimize damage to the semiconductor layer 113.

[0433] Here, the insulating layer 105 is specifically described by taking a structure in which the semiconductor layer 113 is formed of a metal oxide as an example.

[0434] The insulating layer 105 is preferably made of an oxide to improve interface characteristics with the semiconductor layer 113. For example, one or more of silicon oxide and silicon oxynitride can be appropriately used for the insulating layer 105. Furthermore, the insulating layer 105 is preferably made of a film that releases oxygen by heating.

[0435] Note that the insulating layer 105 may also have a stacked-layer structure. The insulating layer 105 may have a stacked-layer structure of an oxide film on the side in contact with the semiconductor layer 113 and a nitride film on the side in contact with the conductive layer 115. As the oxide film, for example, one or more of silicon oxide and silicon oxynitride can be suitably used. As the nitride film, silicon nitride can be suitably used. When the insulating layer 105 has a stacked-layer structure, it is preferable to use an oxide for at least the side of the insulating layer 105 in contact with the semiconductor layer 113 because this improves the interface characteristics with the semiconductor layer 113.

[0436] [Substrate 101] Although there are no particular restrictions on the material of the substrate 101, it must at least have heat resistance sufficient to withstand subsequent heat treatment. For example, the substrate 101 may be a single crystal semiconductor substrate or a polycrystalline semiconductor substrate made of silicon or silicon carbide, a compound semiconductor substrate such as silicon germanium, an SOI substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or an organic resin substrate. Alternatively, a substrate having a semiconductor element disposed thereon may be used as the substrate 101. Furthermore, a printed circuit board may be used as the substrate 101. Note that the semiconductor substrate and the insulating substrate may be circular or angular in shape.

[0437] A flexible substrate may be used as the substrate 101, and, for example, the transistor 50 may be formed directly on the flexible substrate. Alternatively, a release layer may be provided between the substrate 101 and the transistor 50, etc. The release layer may be used when a portion or all of a display device is fabricated on the release layer, which is then separated from the substrate 101 and transferred to another substrate. In this case, the transistor 50, etc. may also be transferred to a substrate with low heat resistance or a flexible substrate.

[0438] [Insulation layer 218] The insulating layer 218 is preferably made of a material that does not readily diffuse impurities. Therefore, the insulating layer 218 serves as a barrier layer that prevents impurities from diffusing from the outside into the transistor. Examples of impurities include water and hydrogen. Providing the insulating layer 218 can improve the reliability of the display device.

[0439] The insulating layer 218 may be an insulating layer containing an inorganic material or an insulating layer containing an organic material. For example, an inorganic material such as an oxide or a nitride may be appropriately used for the insulating layer 218. More specifically, one or more of silicon nitride, silicon oxynitride, silicon oxynitride, aluminum oxide, aluminum oxynitride, aluminum nitride, hafnium oxide, and hafnium aluminate may be used. For example, silicon oxynitride may be appropriately used for the insulating layer 218 because it releases few impurities (for example, water and hydrogen) from the silicon oxynitride itself and can be used as a barrier layer to inhibit the diffusion of impurities from the upper side of the transistor to the transistor. As an organic material, for example, one or more of an acrylic resin and a polyimide resin may be used. As an organic material, a photosensitive material may also be used. In addition, two or more layers of the above-mentioned insulating film may be stacked and used. The insulating layer 218 may also have a stacked structure of an insulating layer containing an inorganic material and an insulating layer containing an organic material.

[0440] [Insulating layer 235] The insulating layer 235 has a function of reducing unevenness caused by the transistor 51, the transistor 52, the capacitor 57, etc. In this specification and other documents, the insulating layer 235 may be referred to as a planarization layer.

[0441] An insulating layer composed of an organic material can be suitably used as the insulating layer 235. A photosensitive organic resin is preferably used as the organic material, and for example, a photosensitive resin composition containing an acrylic resin is preferably used. Note that in this specification, the term "acrylic resin" does not refer solely to polymethacrylate or methacrylic resin but may also refer to acrylic polymers in a broad sense.

[0442] As the insulating layer 235, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimide amide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin and precursors of the above resins can also be used. In addition, as the insulating layer 235, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose or alcohol-soluble polyamide resin can also be used. In addition, as the photosensitive resin, a photoresist can also be used. As the photosensitive organic resin, a positive material or a negative material can be used.

[0443] The insulating layer 235 may also have a stacked structure of an organic insulating layer and an inorganic insulating layer. For example, the insulating layer 235 may have a stacked structure of an organic insulating layer and an inorganic insulating layer on the organic insulating layer. Providing an inorganic insulating layer on the outermost surface of the insulating layer 235 allows the inorganic insulating layer to function as an etching protection layer. This prevents a portion of the insulating layer 235 from being etched during the formation of the pixel electrode 311, thereby preventing a decrease in the flatness of the insulating layer 235.

[0444] When the flatness of the top surface of the insulating layer 235 on which the light-emitting element 60 is formed is low, for example, a poor connection may occur due to the disconnection of the common electrode 315. In addition, when the flatness of the top surface of the insulating layer 235 is low, the thickness of the common electrode 315 may be locally reduced and the resistance may increase. In addition, when the flatness of the top surface of the insulating layer 235 is low, the processing accuracy of the layer formed on the insulating layer 235 may be reduced. By making the top surface of the insulating layer 235 flat, for example, the processing accuracy of the light-emitting element 60 provided on the insulating layer 235 is improved, thereby realizing a display device with high definition. In addition, the occurrence of poor connection due to the disconnection of the common electrode 315 and the increase in resistance due to the local thinning of the thickness of the common electrode 315 can be suppressed, thereby realizing a display device with high display quality.

[0445] Note that part of the insulating layer 235 may be removed when forming the pixel electrode 311. The insulating layer 235 may have a recessed portion in a region that does not overlap with the pixel electrode 311.

[0446] [Pixel electrode 311 and common electrode 315] One or both of the pixel electrode 311 and the common electrode 315 can use a material with high transmittance to visible light. In addition, one of the pixel electrode 311 and the common electrode 315 can use a material that reflects visible light, and the other of the pixel electrode 311 and the common electrode 315 can use a material with high transmittance to visible light. As materials that can be used for the pixel electrode 311 and the common electrode 315, metals, alloys, conductive compounds, and mixtures thereof can be cited. As such materials, specifically, metals such as aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, and neodymium, and alloys thereof that are appropriately combined can be cited. In addition, as such materials, indium tin oxide (In-Sn oxide, also known as ITO), In-Si-Sn oxide (also known as ITSO), indium zinc oxide (In-Zn oxide), and In-W-Zn oxide can be cited. Examples of such materials include aluminum alloys (aluminum alloys) such as alloys of aluminum, nickel, and lanthanum (Al-Ni-La), and silver alloys such as alloys of silver and magnesium and alloys of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Furthermore, examples of such materials include elements not listed above belonging to Group 1 or Group 2 of the periodic table (e.g., lithium, cesium, calcium, and strontium), rare earth metals such as europium and ytterbium, alloys of appropriately combined elements, and graphene.

[0447] [Insulating layer 237] The insulating layer 237 may be an insulating layer including an organic material, for example, a material that can be used for the insulating layer 235. Alternatively, the insulating layer 237 may be an insulating layer including an inorganic material, for example, a material that can be used for the insulating layer 218. Furthermore, the insulating layer 237 may have a stacked-layer structure of an insulating layer including an inorganic material and an insulating layer including an organic material.

[0448] [Protective layer 331] The protective layer 331 may have a single layer structure or a stacked layer structure of two or more layers. In addition, there is no limitation on the conductivity of the protective layer 331. The protective layer 331 may be formed of at least one of an insulating film, a semiconductor film, and a conductive film.

[0449] When the protective layer 331 includes an inorganic film, oxidation of the common electrode 315 and entry of impurities (such as moisture and oxygen) into the light-emitting element 60 can be suppressed. Therefore, degradation of the light-emitting element 60 is suppressed, and the reliability of the display device can be improved.

[0450] The protective layer 331 may be an insulating layer comprising an inorganic material. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film may be used as the protective layer 331. The protective layer 331 may have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include silicon oxide films, aluminum oxide films, magnesium oxide films, indium gallium zinc oxide films, gallium oxide films, germanium oxide films, yttrium oxide films, zirconium oxide films, lanthanum oxide films, neodymium oxide films, hafnium oxide films, and tantalum oxide films. Examples of nitride insulating films include silicon nitride films and aluminum nitride films. Examples of oxynitride insulating films include silicon oxynitride films and aluminum oxynitride films. Examples of nitride oxide insulating films include silicon oxynitride films and aluminum oxynitride films. In particular, the protective layer 331 preferably includes a nitride insulating film or an oxynitride insulating film, and more preferably includes a nitride insulating film.

[0451] Alternatively, an inorganic film including In-Sn oxide (ITO), In-Zn oxide, Ga-Zn oxide, Al-Zn oxide, or In-Ga-Zn oxide (IGZO) may be used for the protective layer 331. The inorganic film preferably has a high resistance, and more specifically, preferably has a resistance higher than that of the common electrode 315. The inorganic film may further contain nitrogen.

[0452] When light emitted from the light emitting element 60 is extracted through the protective layer 331, the protective layer 331 preferably has high visible light transmittance. For example, ITO, IGZO, and alumina are inorganic materials with high visible light transmittance and are therefore preferred.

[0453] For example, a stacked structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used as the protective layer 331. This stacked structure can suppress the entry of impurities (such as water and oxygen) into the EL layer.

[0454] The protective layer 331 may also be made of an organic material. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimide amide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin, or precursors of the above resins may be used as the protective layer 331. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used as the protective layer 331. Furthermore, the protective layer 331 may also include both inorganic and organic materials.

[0455] The protective layer 331 may also have a two-layer structure formed using different deposition methods. Specifically, the first layer of the protective layer 331 may be formed using ALD and the second layer of the protective layer 331 may be formed using sputtering.

[0456] [Substrate 152] Substrate 152 can be made of glass, quartz, ceramic, sapphire, resin, metal, alloy, or semiconductor. The substrate on the side that extracts light from light-emitting element 60 uses a material that transmits this light. Using a flexible material for substrate 152 can enhance the flexibility of the display device. A polarizing plate can also be used as substrate 152. Furthermore, a laminating film or base film can also be used as substrate 152.

[0457] The substrate 152 may be made of a polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (such as nylon or aramid), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamide-imide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, or cellulose nanofiber. Glass having a thickness sufficient to provide flexibility may also be used as the substrate 152.

[0458] When a film is used as a substrate, water absorption by the film may cause the display device to wrinkle or change shape. Therefore, a film with low water absorption is preferably used as the substrate. For example, a film with a water absorption of 1% or less is preferred, 0.1% or less is more preferred, and 0.01% or less is even more preferred.

[0459] In addition, various optical components can be configured on the outside of the substrate 152. As optical components, polarizers (for example, circular polarizers), phase difference plates, light diffusion layers (for example, diffusion films), anti-reflection layers, and condensing films can be used. In addition, surface protective layers such as antistatic films that inhibit the adhesion of dust, water-repellent films that are not easily soiled, hard coatings that inhibit damage during use, or impact-absorbing layers can also be configured on the outside of the substrate 152. For example, by providing a glass layer or a silicon dioxide layer (SiO x Layer), which can prevent the surface from being soiled or damaged, is preferred. In addition, DLC (diamond-like carbon), aluminum oxide (AlO x ), polyester materials or polycarbonate materials, etc. In addition, as the surface protection layer, preferably a material with high transmittance to visible light is used. In addition, the surface protection layer preferably uses a material with high hardness.

[0460] When a circular polarizing plate is stacked on a display device, it is preferable to use a substrate having high optical isotropy as the substrate included in the display device. A substrate having high optical isotropy has low birefringence (or a small amount of birefringence).

[0461] The absolute value of the retardation value of the substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and further preferably 10 nm or less.

[0462] Examples of films having high optical isotropy include cellulose triacetate (also referred to as TAC: Cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0463] [Adhesive layer 142] As the adhesive layer 142, various curing adhesives such as light-curing adhesives such as ultraviolet curing adhesives, reaction-curing adhesives, heat-curing adhesives, or anaerobic adhesives can be used. Examples of these adhesives include epoxy resins, acrylic resins, silicone resins, phenolic resins, polyimide resins, imide resins, PVC (polyvinyl chloride) resins, PVB (polyvinyl butyral) resins, and EVA (ethylene vinyl acetate) resins. It is particularly preferred to use materials with low moisture permeability such as epoxy resins. Alternatively, a two-liquid mixed resin can be used. Furthermore, for example, an adhesive sheet can be used.

[0464] [Light-shielding layer 317] Examples of materials that can be used for the light-shielding layer 317 include carbon black, titanium black, metals, metal oxides, and composite oxides containing solid solutions of multiple metal oxides. Alternatively, the light-shielding layer 317 may have a structure in which multiple layers containing materials for coloring layers are stacked. For example, the light-shielding layer 317 may have a stacked structure in which a layer containing a material for a coloring layer that transmits light of a certain color is stacked with a layer containing a material for a coloring layer that transmits light of another color.

[0465] The above is the description of the components.

[0466] <Circuit Configuration Example> The following describes a circuit in which one embodiment of the present invention can be applied. Figure 1C 、 Figure 1D and Figure 2B circuits other than the configuration shown.

[0467] [Pixels] Figure 105A 、 Figure 105B and Figure 105C It shows Figure 2A 1 is a circuit diagram showing a structural example of a sub-pixel 23 included in a pixel 21 shown. Figure 105A The sub-pixel 23 shown includes a pixel circuit 40D and a light-emitting element 60. The pixel circuit 40D has a configuration in which a transistor 54 and a capacitor 58 are added to the pixel circuit 40C. The pixel circuit 40D is a 4Tr2C type pixel circuit.

[0468] In pixel circuit 40D, one of the source and drain of transistor 52 is electrically connected to one of the source and drain of transistor 54. The other of the source and drain of transistor 54 is electrically connected to wiring 45. The gate of transistor 54 is electrically connected to wiring 41c. One electrode of capacitor 58 is electrically connected to the other of the source and drain of transistor 52, one of the source and drain of transistor 53, the other electrode of capacitor 57, and one electrode of light-emitting element 60.

[0469] The wiring 41c is electrically connected to the scanning line driving circuit 11. That is, the sub-pixel 23 included in the pixel 21 has Figure 105A In the structure shown, the display device 10 includes a wiring 41 a , a wiring 41 b , and a wiring 41 c as the wiring 41 .

[0470] The transistor 54 functions as a switch and has a function of controlling the conduction state and the non-conduction state between the wiring 45 and one of the source and the drain of the transistor 52 according to the potential of the wiring 41 c .

[0471] When the transistor 54 is turned on, a current corresponding to the gate potential of the transistor 52 flows from the wiring 45 to the wiring 47, for example. As a result, the light-emitting element 60 emits light with a brightness corresponding to the gate potential of the transistor 52. On the other hand, when the transistor 54 is turned off, no current flows through the light-emitting element 60, and thus the light-emitting element 60 does not emit light.

[0472] An OS transistor is preferably used as the transistor 54. As described above, an OS transistor has a higher field effect mobility than a transistor using amorphous silicon, for example. Therefore, by using an OS transistor as the transistor 54, the display device 10 can be driven at high speed.

[0473] Figure 105B The sub-pixel 23 shown includes a pixel circuit 40E and a light-emitting element 60. The pixel circuit 40E has a structure in which a transistor 54 is added to the pixel circuit 40C. The pixel circuit 40E is a 4Tr1C type pixel circuit.

[0474] In the pixel circuit 40E, one of the source and drain of the transistor 54 is electrically connected to the other of the source and drain of the transistor 51, the gate of the transistor 52, and one of the electrodes of the capacitor 57. The other of the source and drain of the transistor 54 is electrically connected to the wiring 49. The gate of the transistor 54 is electrically connected to the wiring 41c. Figure 105B In the structure shown, the display device 10 includes a wiring 41 a , a wiring 41 b , and a wiring 41 c as the wiring 41 .

[0475] When transistor 54 is turned on, the gate of transistor 52 can be at the potential of wiring 49. Here, for example, a low potential can be supplied to wiring 49. As described above, for example, current does not flow through light emitting element 60, so light emitting element 60 does not emit light.

[0476] Figure 105C The sub-pixel 23 shown includes a pixel circuit 40F and a light-emitting element 60 .

[0477] The pixel circuit 40F includes a transistor 61, a transistor 62, a transistor 63, a transistor 64, a transistor 65, a transistor 66, a capacitor 67, and a capacitor 68. That is, the pixel circuit 40F is a 6Tr2C type pixel circuit.

[0478] In the pixel circuit 40F, one of the source and drain of the transistor 61 is electrically connected to the wiring 45. The other of the source and drain of the transistor 61 is electrically connected to one of the source and drain of the transistor 62. One of the source and drain of the transistor 62 is electrically connected to one of the source and drain of the transistor 63. The gate of the transistor 61 is electrically connected to the wiring 41d.

[0479] The other of the source and the drain of the transistor 62 is electrically connected to the gate of the transistor 63. The gate of the transistor 63 is electrically connected to one electrode of the capacitor 67. The gate of the transistor 62 is electrically connected to the wiring 41e.

[0480] One of the source and drain of transistor 64 is electrically connected to wiring 43. The other of the source and drain of transistor 64 is electrically connected to the other of the source and drain of transistor 63. The other of the source and drain of transistor 63 is electrically connected to one of the source and drain of transistor 65. The gate of transistor 64 is electrically connected to wiring 41f.

[0481] The other of the source and drain of transistor 65 is electrically connected to one of the source and drain of transistor 66. One of the source and drain of transistor 66 is electrically connected to the other electrode of capacitor 67. The other electrode of capacitor 67 is electrically connected to one electrode of capacitor 68. One electrode of capacitor 68 is electrically connected to one electrode of light-emitting element 60. The gate of transistor 65 is electrically connected to wiring 41g.

[0482] The other of the source and the drain of the transistor 66 is electrically connected to the wiring 48. The gate of the transistor 66 is electrically connected to the wiring 41e.

[0483] The other electrode of the capacitor 68 is electrically connected to the wiring 41 f . The other electrode of the light emitting element 60 is electrically connected to the wiring 47 .

[0484] The wiring 41d, wiring 41e, wiring 41f and wiring 41g are electrically connected to the scanning line driving circuit 11. That is, when the sub-pixel 23 included in the pixel 21 has Figure 105C In the structure shown, the display device 10 includes a wiring 41 d , a wiring 41 e , a wiring 41 f , and a wiring 41 g as the wiring 41 .

[0485] Transistors 61, 62, 64, 65, and 66 function as switches. Transistor 61 controls the conduction and non-conduction states between wiring 45 and one of the source and drain of transistor 62 and one of the source and drain of transistor 63, depending on the potential of wiring 41d. Transistor 62 controls the conduction and non-conduction states between the other of the source and drain of transistor 61 and one of the source and drain of transistor 63, and the gate of transistor 63 and one of the electrodes of capacitor 67, depending on the potential of wiring 41e. Transistor 64 controls the conduction and non-conduction states between wiring 43 and the other of the source and drain of transistor 63 and one of the source and drain of transistor 65, depending on the potential of wiring 41f. Transistor 65 controls the conduction and non-conduction states between the other of the source and drain of transistor 63 and the other of the source and drain of transistor 64, and one of the electrodes of light-emitting element 60, depending on the potential of wiring 41g. The transistor 66 has a function of controlling the conduction state and the non-conduction state between the wiring 48 and one electrode of the light emitting element 60 according to the potential of the wiring 41 e .

[0486] OS transistors are preferably used as transistors 61 to 66. For example, OS transistors have higher field effect mobility than transistors using amorphous silicon. Therefore, by using OS transistors as transistors 61 to 66, the display device 10 can be driven at high speed.

[0487] [Storage Unit] One embodiment of the present invention can be applied not only to a display device but also to a storage device. Figure 106A This is a block diagram illustrating an example structure of a memory device 70 to which one embodiment of the present invention can be applied. Memory device 70 includes a memory section 80, a word line driver circuit 71, a bit line driver circuit 73, and a power supply circuit 75. Memory section 80 includes a plurality of memory cells 81 arranged in a matrix. Note that power supply circuit 75 may also be provided external to memory device 70.

[0488] The word line drive circuit 71 is electrically connected to the memory cell 81 via the wiring 41. Figure 1A Similarly to the display device 10 shown, the wiring 41 extends in the row direction of the matrix, for example. In the memory device 70, the wiring 41 is used as a word line.

[0489] The bit line driver circuit 73 is electrically connected to the memory cell 81 via the wiring 43. Figure 1A Similarly to the display device 10 shown, the wiring 43 extends in the column direction of the matrix. In the memory device 70, the wiring 41 is used as a bit line.

[0490] The power supply circuit 75 is electrically connected to the memory cells 81 via the wiring 45. For example, all the memory cells 81 may be electrically connected to the power supply circuit 75 via the same wiring 45. The wiring 45 serves as a power supply line.

[0491] The word line driver circuit 71 has the function of selecting the memory cells 81 to which data is written, row by row. Furthermore, the word line driver circuit 71 has the function of selecting the memory cells 81 from which data is read, row by row. Specifically, the word line driver circuit 71 outputs a signal to the wiring 41 to select the memory cells 81 to which data is written or the memory cells 81 from which data is read.

[0492] The bit line driver circuit 73 has the function of writing data to the memory cell 81 selected by the word line driver circuit 71 via the wiring 43. The bit line driver circuit 73 also has the function of amplifying the data outputted from the memory cell 81 to the wiring 43 and outputting it, for example, to the outside of the memory device 70, thereby reading the data held by the memory cell 81. Furthermore, the bit line driver circuit 73 has the function of precharging the wiring 43 before reading data from the memory cell 81.

[0493] The power supply circuit 75 has a function of generating a power supply potential and supplying it to the wiring 45. The power supply circuit 75 has a function of generating a high potential or a low potential and supplying it to the wiring 45, for example.

[0494] Figure 106B 、 Figure 106C 、 Figure 106D 、 Figure 106E and Figure 106F 81 is a circuit diagram showing a configuration example of the storage unit 81. Figure 106B 、 Figure 106C 、 Figure 106D 、 Figure 106E and Figure 106F The storage units 81 shown are storage unit 81A, storage unit 81B, storage unit 81C, storage unit 81D, and storage unit 81E.

[0495] The memory cell 81A includes a transistor 51 and a capacitor 57. That is, the memory cell 81A is a 1Tr1C type memory cell.

[0496] In memory cell 81A, one of the source and drain of transistor 51 is electrically connected to wiring 43. The other of the source and drain of transistor 51 is electrically connected to one electrode of capacitor 57. The gate of transistor 51 is electrically connected to wiring 41. The other electrode of capacitor 57 is electrically connected to wiring 45.

[0497] In memory cell 81A, when transistor 51 is turned on, data is written to memory cell 81A via wiring 43. When transistor 51 is turned off, the written data is retained. Furthermore, by turning on transistor 51, the data retained in memory cell 81A can be output to wiring 43, allowing bit line driver circuit 73 to read the data.

[0498] The memory cell 81B includes a transistor 51, a transistor 52, and a capacitor 57. That is, the memory cell 81B is a 2Tr1C type memory cell.

[0499] Memory cell 81B is electrically connected to wiring 41a and wiring 41h, which serve as wiring 41, and wiring 43a and wiring 43b, which serve as wiring 43. Specifically, one of the source and drain of transistor 51 is electrically connecte...

Claims

1. A display device, comprising: Pixels; Power supply circuit; as well as Scan line driver circuit, The pixel includes a first transistor, a second transistor and a first insulating layer. The first transistor includes a first conductive layer, a second conductive layer, a third conductive layer, a first semiconductor layer and a second insulating layer. The first insulating layer is disposed on the first conductive layer, The first insulating layer includes a first opening portion reaching the first conductive layer, The second conductive layer is disposed on the first insulating layer, The second conductive layer includes a second opening having a region overlapping with the first opening, The second conductive layer is electrically connected to the power circuit, The first semiconductor layer is provided so as to have a region in contact with the first conductive layer and a region in contact with the second conductive layer and a region located inside the first opening and a region located inside the second opening. The second insulating layer is provided on the first semiconductor layer so as to have a region located inside the first opening and a region located inside the second opening. The third conductive layer is provided so as to have a region located inside the first opening and a region located inside the second opening and a region facing the first semiconductor layer with the second insulating layer interposed therebetween. The second transistor includes the second insulating layer, a second semiconductor layer under the second insulating layer, and a fourth conductive layer on the second insulating layer. The fourth conductive layer has a region overlapping with the second semiconductor layer, The fourth conductive layer is electrically connected to the scan line driving circuit. Furthermore, the fourth conductive layer has a region overlapping the second conductive layer via the second insulating layer.

2. The display device according to claim 1, wherein the second transistor comprises a fifth conductive layer in contact with the second semiconductor layer, And the fifth conductive layer is electrically connected to the third conductive layer.

3. The display device according to claim 2, further comprising: Signal line driver circuit, wherein the second transistor comprises a sixth conductive layer in contact with the second semiconductor layer, And the sixth conductive layer is electrically connected to the signal line driving circuit.

4. The display device according to any one of claims 1 to 3, The first semiconductor layer and the second semiconductor layer include metal oxide.

5. The display device according to claim 4, The metal oxide comprises indium, zinc and M, and M is one or more selected from aluminum, titanium, gallium, germanium, tin, yttrium, zirconium, lanthanum, cerium, neodymium and hafnium.

6. The display device according to any one of claims 1 to 3, wherein the pixel comprises a display element, And the pixel electrode of the display element is electrically connected to the first conductive layer.

7. The display device according to claim 6, The display device includes a reference potential generating circuit. The pixel comprises a third transistor, The third transistor includes a seventh conductive layer, an eighth conductive layer, a ninth conductive layer, a third semiconductor layer and the second insulating layer, The first insulating layer is disposed on the seventh conductive layer, The first insulating layer includes a third opening portion reaching the seventh conductive layer, The seventh conductive layer is electrically connected to the reference potential generating circuit, The eighth conductive layer is disposed on the first insulating layer, The eighth conductive layer includes a fourth opening having a region overlapping with the third opening, The eighth conductive layer is electrically connected to the pixel electrode, The third semiconductor layer is provided so as to have a region in contact with the seventh conductive layer and a region in contact with the eighth conductive layer and a region located inside the third opening and a region located inside the fourth opening. The second insulating layer is provided on the third semiconductor layer in a manner of having a region located inside the third opening and a region located inside the fourth opening, The ninth conductive layer is provided so as to have a region located inside the third opening and a region located inside the fourth opening and a region facing the third semiconductor layer with the second insulating layer interposed therebetween. The ninth conductive layer is electrically connected to the scan line driving circuit. And the seventh conductive layer has a region overlapping with the fourth conductive layer and a region overlapping with the ninth conductive layer.

8. The display device according to claim 7, The third semiconductor layer comprises a metal oxide.

9. The display device according to claim 8, The metal oxide comprises indium, zinc and M, and M is one or more selected from aluminum, titanium, gallium, germanium, tin, yttrium, zirconium, lanthanum, cerium, neodymium and hafnium.

10. A display device, comprising: Pixels; Scan line driving circuit; as well as Power supply circuit, The pixel includes a first transistor, a second transistor and a first insulating layer. The first transistor includes a first conductive layer, a second conductive layer, a third conductive layer, a first semiconductor layer and a second insulating layer. The first insulating layer is disposed on the first conductive layer, The first insulating layer includes a first opening portion reaching the first conductive layer, The second conductive layer is disposed on the first insulating layer, The second conductive layer includes a second opening having a region overlapping with the first opening, The first semiconductor layer is provided so as to have a region in contact with the first conductive layer and a region in contact with the second conductive layer and a region located inside the first opening and a region located inside the second opening. The second insulating layer is provided on the first semiconductor layer so as to have a region located inside the first opening and a region located inside the second opening. The third conductive layer is provided so as to have a region located inside the first opening and a region located inside the second opening and a region facing the first semiconductor layer with the second insulating layer interposed therebetween. The third conductive layer is electrically connected to the scan line driving circuit. The second transistor includes a fourth conductive layer, a fifth conductive layer, a sixth conductive layer, a second semiconductor layer and the second insulating layer, The first insulating layer is disposed on the fourth conductive layer, The first insulating layer includes a third opening that reaches the fourth conductive layer, The fifth conductive layer is disposed on the first insulating layer, The fifth conductive layer includes a fourth opening having a region overlapping with the third opening, The fifth conductive layer is electrically connected to the power circuit. The second semiconductor layer is provided so as to have a region in contact with the fourth conductive layer and a region in contact with the fifth conductive layer and a region located inside the third opening and a region located inside the fourth opening. The second insulating layer is provided on the second semiconductor layer so as to have a region located inside the third opening and a region located inside the fourth opening. The sixth conductive layer is provided so as to have a region located inside the third opening and a region located inside the fourth opening and a region facing the second semiconductor layer with the second insulating layer interposed therebetween. Furthermore, the fifth conductive layer includes a region overlapping the third conductive layer through the second insulating layer.

11. The display device according to claim 10, further comprising: Signal line driver circuit, The first conductive layer is electrically connected to the signal line driving circuit. And the first conductive layer has a region overlapping with the third conductive layer.

12. The display device according to claim 10 or 11, The second conductive layer is electrically connected to the sixth conductive layer.

13. The display device according to claim 10 or 11, The first semiconductor layer and the second semiconductor layer include metal oxide.

14. The display device according to claim 13, The metal oxide comprises indium, zinc and M, and M is one or more selected from aluminum, titanium, gallium, germanium, tin, yttrium, zirconium, lanthanum, cerium, neodymium and hafnium.

15. The display device according to claim 10 or 11, wherein the pixel comprises a display element, And the pixel electrode of the display element is electrically connected to the fourth conductive layer.

16. The display device according to claim 15, The display device includes a reference potential generating circuit. The pixel comprises a third transistor, The third transistor includes a seventh conductive layer, an eighth conductive layer, a ninth conductive layer, a third semiconductor layer and the second insulating layer, The first insulating layer is disposed on the seventh conductive layer, The first insulating layer includes a fifth opening that reaches the seventh conductive layer, The seventh conductive layer is electrically connected to the reference potential generating circuit, The eighth conductive layer is disposed on the first insulating layer, The eighth conductive layer includes a sixth opening having a region overlapping with the fifth opening, The eighth conductive layer is electrically connected to the pixel electrode, The third semiconductor layer is provided so as to have a region in contact with the seventh conductive layer and a region in contact with the eighth conductive layer and a region located inside the fifth opening and a region located inside the sixth opening. The second insulating layer is provided on the third semiconductor layer in a manner of having a region located inside the fifth opening and a region located inside the sixth opening, The ninth conductive layer is provided so as to have a region located inside the fifth opening and a region located inside the sixth opening and a region facing the third semiconductor layer with the second insulating layer interposed therebetween. The ninth conductive layer is electrically connected to the scan line driving circuit. And the seventh conductive layer has a region overlapping with the third conductive layer and a region overlapping with the ninth conductive layer.

17. The display device according to claim 16, The third semiconductor layer comprises a metal oxide.

18. The display device according to claim 17, The metal oxide comprises indium, zinc and M, and M is one or more selected from aluminum, titanium, gallium, germanium, tin, yttrium, zirconium, lanthanum, cerium, neodymium and hafnium.

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