Manufacturing method of optical flow control chip structure

Abstract

The invention relates to the technical field of micro-fluidic chips and photoelectric tweezers, in particular to a manufacturing method of an optical fluidic chip structure, an upper plate and a lower plate are fitted and matched to form a photoelectric tweezers functional area and a digital micro-fluidic functional area, and the photoelectric tweezers functional area and the digital micro-fluidic functional area complete plane treatment; the upper plate comprises a glass layer, a conductive layer and a hydrophobic layer. According to the method, through the combination of the well-designed photoelectric tweezers functional area and the digital microfluidic area, efficient micro-droplet control and accurate particle sorting and enrichment are achieved, meanwhile, extremely high flexibility and adjustability are provided, various complex biochemical operation requirements can be met, and the method is suitable for large-scale popularization and application. Precise control of particles is achieved through the photoelectric effect of the photoelectric tweezers area, precise separation of particles or cells in liquid drops and the liquid drops is achieved through electric field regulation and control of the digital micro-fluidic area, and finally an efficient, extensible and high-throughput micro-fluidic platform is provided.

Description

Technical Field

[0001] The invention relates to the technical field of microfluidic chips and optoelectronic tweezers technology, and in particular to a method for manufacturing an optofluidic chip structure. Background Art

[0002] As an important microscale operation technology, microfluidics has broad application prospects in the fields of life sciences, chemical analysis and medical diagnosis. Digital microfluidics (DMF) technology is widely used in liquid distribution, mixing, reaction and detection due to its high flexibility and arrayed driving ability in droplet operation. However, digital microfluidics technology is currently mainly limited to the macroscopic manipulation of microdroplets, and it is difficult to achieve fine manipulation of microscopic particles or cells inside droplets. On the other hand, optoelectronic tweezers (OET) technology has also attracted increasing attention due to its high precision and flexibility in particle capture, cell manipulation and nanoscale patterning. Optoelectronic tweezers technology can achieve precise manipulation of micro-nanoparticles, cells and micro-nano robots, but its existing chip design often needs to be combined with continuous microfluidics technology to achieve sample injection and collection, which limits its application in multi-condition experiments.

[0003] With the increasing demand for modern biomedical research and complex biochemical operations, how to combine the advantages of digital microfluidics and optoelectronic tweezers to build an efficient microfluidics platform that can simultaneously achieve droplet manipulation and precise manipulation of particles in droplets has become an important research direction in the current development of microfluidics. This technological breakthrough will not only greatly improve the practicality of microfluidics systems in complex biochemical analysis, but will also promote the application of micro-nano manipulation technology in life sciences and micro-nano engineering.

[0004] Although digital microfluidics and optoelectronic tweezers have shown good application potential in their respective fields, they still have significant deficiencies in actual use. Digital microfluidics mainly realizes the operation of microdroplets through the dielectric wetting effect, but its application objects are usually limited to the droplets themselves, and it is difficult to achieve precise control of tiny substances such as cells and particles in the droplets. In addition, digital microfluidic chips require a higher driving voltage (usually in the range of 90-110V), which not only increases the complexity of operation, but also puts higher requirements on the material and structure of the chip.

[0005] In contrast, the photoelectric tweezers technology is based on the photoinduced dielectrophoresis effect and can achieve precise manipulation of micro-nanoparticles under low voltage conditions (usually no more than 25V). However, because the photoelectric tweezers chip needs to generate a non-uniform electric field on the photoconductive layer, the existing chip structure is prone to breakdown due to excessive voltage when the conductivity of the photoconductive layer changes, resulting in chip failure. In addition, when conducting experiments under complex conditions, the photoelectric tweezers technology cannot achieve high-throughput operation of droplets and particles on a single chip at the same time, and the experimental efficiency is low. Therefore, we provide a method for making an optofluidic chip structure. Summary of the invention

[0006] In view of the above-mentioned shortcomings of the prior art, a first object of the present invention is to provide a method for manufacturing an optofluidic chip structure to solve the above-mentioned problems in the background technology.

[0007] To achieve the above object, the present invention provides the following technical solutions:

[0008] A method for manufacturing an optofluidic chip structure, comprising an upper plate and a lower plate; characterized in that:

[0009] The upper plate and the lower plate are fitted together to form a photoelectric tweezers functional area and a digital microfluidic functional area, and the photoelectric tweezers functional area and the digital microfluidic functional area are plane-processed;

[0010] The upper plate includes a glass layer, a conductive layer and a hydrophobic layer, and the lower plate includes a glass layer, a hydrophobic layer, a photoconductive layer, a conductive layer, a dielectric layer, an electrode layer and an insulating layer;

[0011] A liquid droplet is sandwiched between the upper plate and the lower plate, and the conductive layer of the upper plate is connected with the conductive layer of the lower plate to form a photoelectric tweezers functional area;

[0012] The conductive layer of the upper plate which is different from the photoelectric tweezers functional area and connected to the electrode insulation mixed layer of the lower plate forms a digital microfluidic functional area.

[0013] The present invention is further configured as follows: the glass layers of the upper plate located on both sides of the conductive layer are made of transparent materials, and the thickness is 0.55um-1.1um; the glass layers are made into a graphic form to reduce the driving voltage.

[0014] The present invention is further configured as follows: the thickness of the conductive layer on the same side of the two glass layers in the upper plate is 0.2um±0.05, and the thickness of the hydrophobic layer of the upper plate attached to the droplet area is 0.3-1um.

[0015] The present invention is further configured as follows: the spacing height between the upper plate and the lower plate is 50um to 200um.

[0016] The present invention is further configured such that: the thickness of the glass layer of the lower plate is 0.55 um to 1.1 um.

[0017] The present invention is further configured as follows: a dielectric layer with a thickness of 1um±0.3 is provided on a side of the lower plate insulating electrode mixed layer away from the glass layer;

[0018] The dielectric layer fills the trench to prevent the patterned electrode from being broken down during use. The dielectric layer is made of silicon carbide, silicon dioxide, silicon nitride, polyimide, hexamethyldisilazane, and others.

[0019] The present invention is further configured as follows: the glass layer of the lower plate is cross-mixed with the insulating layer and the electrode layer to form an insulating electrode mixed layer, and the thickness of the insulating electrode mixed layer is 0.3-1 um;

[0020] The insulating electrode mixed layer is coated on the entire surface by PECVD or controlled sputtering to prevent breakdown with the metal layer.

[0021] The present invention is further configured as follows: a conductive layer with a thickness of 0.2um±0.05 is provided on a side of the dielectric layer away from the insulating electrode mixed layer;

[0022] The conductive layer is coated on the entire surface by PECVD or controlled sputtering to prevent breakdown of the metal layer. The material is gold, silver, copper, nickel, chromium, zinc, tin, titanium, palladium, platinum and other opaque metal materials.

[0023] The present invention is further configured as follows: the thickness of the optical guide layer laid on the side of the conductive layer away from the dielectric layer is 0.3 to 5 um;

[0024] The conductive layer is arranged by magnetron sputtering pecvd or other methods to arrange the photoconductive layer a-siH or ZNS GaAs InAs InP GaNCdTe CdHgTe: Se and SE compounds, and different photoconductive layers are selected according to different wavelengths;

[0025] If the photocurrent effect is to be increased, the photoconductive layer and the conductive layer may be bonded on the metal layer by an NPN transistor, and a hydrophobic layer is arranged on the photoconductive layer.

[0026] The present invention is further configured as follows: a desired patterned film is plated on the insulating layer, and the position of the metal plate contact can be changed by TGV in a similar manner.

[0027] Method 1: For example, ITO is plated on glass and the desired image is left by etching;

[0028] Method 2: Put a corresponding patterned photoresist on the insulating layer such as glass or other materials on the PCB board, and coat it by magnetron sputtering and Pecvd;

[0029] Method 3: Obtain a detailed image on an insulating layer such as glass or other materials on a PCB board by means of coating - photolithography - development - etching - coating - debonding.

[0030] Beneficial Effects

[0031] Compared with the known public technology, the technical solution provided by the present invention has the following beneficial effects:

[0032] The present invention combines a carefully designed photoelectric tweezers functional area with a digital microfluidic area. This method achieves efficient microdroplet manipulation, precise particle sorting and enrichment, and provides extremely high flexibility and adjustability, which can meet the needs of various complex biochemical operations. The photoelectric effect of the photoelectric tweezers area is used to achieve precise control of the particles, and the electric field regulation of the digital microfluidic area is used to achieve precise separation of particles or cells from droplets. Ultimately, an efficient, scalable and high-throughput microfluidic platform is provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 A schematic diagram of the arrangement of dielectric layers and insulating layers in a method for manufacturing an optofluidic chip structure of the present invention;

[0034] Figure 2 A schematic diagram of the arrangement of the conductive layer and the dielectric layer in a method for manufacturing an optofluidic chip structure of the present invention;

[0035] Figure 3 A schematic diagram of the arrangement of the light-guiding layer and the conductive layer of a method for manufacturing an optofluidic chip structure of the present invention;

[0036] Figure 4 A schematic diagram of the arrangement of a hydrophobic layer and a photoconductive layer in a method for manufacturing an optofluidic chip structure of the present invention;

[0037] Figure 5 It is a schematic diagram of an overall chip of a method for manufacturing an optofluidic chip structure of the present invention;

[0038] Figure 6 It is a schematic diagram showing the actual manufacturing method of an optofluidic chip structure of the present invention.

[0039] Legend:

[0040] 1. Glass layer; 2. Hydrophobic layer; 3. Photoconductive layer; 4. Conductive layer; 5. Dielectric layer; 6. Electrode layer; 7. Insulating layer; 8. Droplets. DETAILED DESCRIPTION

[0041] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the described embodiments are only part of the embodiments of the present application, rather than all the embodiments, and the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of this application.

[0042] It should be further explained that the drawings and implementation modes of the present invention mainly describe the concept of the present invention. On the basis of this concept, the specific forms and settings of some connection relationships, positional relationships, power mechanisms, power supply systems, hydraulic systems and control systems may not be fully described. However, on the premise that those skilled in the art understand the concept of the present invention, those skilled in the art can implement the above-mentioned specific forms and settings in a well-known manner.

[0043] When an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or indirectly connected to the other element.

[0044] The directional words "inside and outside" refer to the inside and outside relative to the outline of each component itself. The directions or positional relationships indicated by the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the directions or positional relationships shown in the drawings and are only for the convenience of describing the present invention and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0045] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" may include both "above" and "below". The device may also be positioned in other different ways, and the spatially relative descriptions used here are interpreted accordingly.

[0046] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "multiple" means two or more, and "several" means one or more, unless otherwise clearly and specifically defined.

[0047] A method for manufacturing an optofluidic chip structure provided by the present invention is now described.

[0048] Example 1

[0049] like Figure 1-4 The present invention provides a solution: a method for manufacturing an optofluidic chip structure, wherein the thickness of the glass layer 1 of the lower board is also 0.55 μm to 1.1 μm, and an insulating electrode mixed layer is formed on the lower board, and a dielectric layer 5 with a thickness of 1 μm ± 0.3 is provided on the side of the insulating electrode mixed layer away from the glass layer 1. The dielectric layer 5 is used to fill the channel to prevent the patterned electrode from being broken down during use. The material used for the dielectric layer 5 can be silicon carbide (SiC) or other dielectric layer materials.

[0050] In the lower board, the total thickness of the insulating electrode mixed layer is 0.3μm to 1μm. The insulating electrode mixed layer is formed by PECVD or magnetron sputtering, and can be cross-mixed with the electrode layer 6 on the insulating layer 7 to ensure a stable electric field distribution in the electrode area and prevent the metal layer from breaking down.

[0051] A conductive layer 4 is provided on the side of the dielectric layer 5 away from the insulating electrode mixed layer, and its thickness is 0.2μm±0.05. The conductive layer 4 is deposited on the entire plane by PECVD or magnetron sputtering, and the material is gold, silver, copper, nickel, chromium, zinc, tin, titanium, palladium, platinum and other (Cr), non-transparent metals, to enhance the overall conductivity of the structure and provide electric field driving force.

[0052] A photoconductive layer 3 is laid on the side of the conductive layer 4 away from the dielectric layer 5, and the thickness thereof is 0.3 μm to 5 μm. The photoconductive layer 3 can be deposited by magnetron sputtering or PECVD, such as a-Si:H, ZnS, GaAs, InAs, InP, GaN, CdTe, CdHgTe:Se and Se compounds, etc. Different photoconductive materials are selected according to the required wavelength and light response characteristics. If the photocurrent effect needs to be enhanced, the photoconductive layer 3 can be integrated on the metal layer by using NPN transistor bonding technology, and a hydrophobic layer 2 is further laid on the surface of the photoconductive layer 3 to prevent liquid from being retained on this surface.

[0053] In this embodiment, the lower-level board manufacturing method is as follows:

[0054] 1) Performing a patterning process on the glass layer 1, using processes such as photolithography + etching + Lift-Off, to form a desired electrode pattern on the insulating layer 7 and the electrode layer 6 to form an insulating electrode mixed layer (thickness 0.3μm to 1μm).

[0055] 2) A dielectric layer 5 (thickness 1 μm±0.3) is deposited on the side of the insulating electrode mixed layer away from the glass layer 1, and the dielectric layer 5 is filled with the trench by PECVD or sputtering to prevent the electrode from being broken down under high voltage operation.

[0056] 3) A conductive layer 4 (thickness 0.2 μm ± 0.05) is deposited on the side of the dielectric layer 5 away from the insulating electrode mixed layer. Gold, silver, copper, nickel, chromium, zinc, tin, titanium, palladium, platinum and others are selected as materials and evenly spread over the entire plane by PECVD or magnetron sputtering.

[0057] 4) Depositing a photoconductive layer 3 (thickness 0.3 μm to 5 μm) on the conductive layer 4, a-Si:H or other photoconductive materials can be selected according to application requirements, and enhancing the light response characteristics through appropriate annealing treatment, and then spin-coating a hydrophobic layer 2 on the photoconductive layer 3 to ensure low adhesion of the microdroplets.

[0058] Example 2

[0059] like Figure 1-5The present invention provides a solution: a method for manufacturing an optofluidic chip structure, wherein the glass layers 1 on both sides of the conductive layer 4 of the upper plate are made of transparent materials, and the thickness is 0.55um~1.1um, the thickness of the conductive layer 4 on the same side of the two glass layers 1 in the upper plate is 0.2um±0.05, the glass layer 1 is patterned to reduce the driving voltage, and the thickness of the hydrophobic layer 2 in the upper plate in the area where the droplet 8 is attached is 0.3~1um; the thickness of the glass layer 1 of the lower plate is 0.55um~1.1um, and a dielectric layer 5 with a thickness of 1um±0.3 is provided on the side of the insulating electrode mixed layer of the lower plate away from the glass layer 1; the dielectric layer 5 fills the channel to prevent the patterned electrode from being broken down during use, and the dielectric layer material of the dielectric layer 5 is silicon carbide, silicon dioxide, silicon nitride, polyimide, hexamethyldisilazane Alkane, and others; the glass layer 1 of the lower plate is cross-mixed by the insulating layer 7 and the electrode layer 6 to form an insulating electrode mixed layer, and the thickness of this insulating electrode mixed layer is 0.3~1um; the insulating electrode mixed layer is coated on the entire plane by PECVD or measurement and control sputtering to prevent breakdown with the metal layer; the dielectric layer 5 is provided with a conductive layer 4 with a thickness of 0.2um±0.05 on the side away from the insulating electrode mixed layer; the conductive layer 4 is coated on the entire plane by PECVD or measurement and control sputtering to prevent breakdown with the metal layer. The material is gold, silver, copper, nickel, chromium, zinc, tin, titanium, palladium, platinum and other opaque metal materials; the photoconductive layer 3 laid on the side away from the dielectric layer 5 is 0.3~5um thick; the conductive layer 4 is arranged with a photoconductive layer a-siH or ZNS by magnetron sputtering pecvd and other methods GaAs InAs InP GaN CdTe CdHgTe: Se and SE compounds, different photoconductive layers 4 are selected according to different wavelengths; if the photocurrent effect is to be increased, the photoconductive layer 3 and the conductive layer 4 can be bonded to the metal layer by an NPN transistor, and a hydrophobic layer 2 is arranged on the photoconductive layer 3.

[0060] In this embodiment, the upper board manufacturing method is:

[0061] 1) depositing a conductive layer 4 (thickness 0.2 μm ± 0.05) on the glass layer 1 by PECVD or magnetron sputtering, ensuring that the conductive layer 4 is uniform and completely covered;

[0062] 2) dripping a hydrophobic material solution onto the conductive layer 4, obtaining a uniform hydrophobic layer 2 (thickness 0.3 μm to 1 μm) by spin coating, and then heating and annealing in an oven to stabilize its hydrophobic properties;

[0063] 3) Drill holes and cut according to the microfluidic channels and micropump structures required in the later stage to ensure that droplets can be transferred from the photoelectric tweezers functional area to the digital microfluidic functional area.

[0064] Example 3

[0065] like Figure 1-6 , the present invention provides a solution: a method for manufacturing an optofluidic chip structure, wherein the spacing height between the upper plate and the lower plate is 50 μm to 200 μm, so as to provide sufficient space for the transfer of microdroplets between the optoelectronic tweezers functional area and the digital microfluidic functional area;

[0066] In actual production, a patterned thin film electrode can be realized on materials such as the insulating layer 7 or the glass layer 1 by using TGV (Through Glass Via) or photolithography + etching + degumming. The method includes:

[0067] Method 1: Coat ITO on glass and etch the desired pattern;

[0068] Method 2: Apply a corresponding patterned photomask to the insulating layer 7 (such as glass or PCB material) and coat the film by magnetron sputtering and PECVD;

[0069] Method 3: coating, photolithography, developing, etching, coating, and degumming the insulating layer 7 to obtain a refined image and electrode pattern.

[0070] In this embodiment, the process is used:

[0071] 1. First, use a micropump to inject the microdroplets to be operated into the photoelectric tweezers functional area. At this time, the conductivity of the photoconductive layer 3 corresponding to the photoelectric tweezers functional area changes after being stimulated by light, and a non-uniform electric field is generated under the applied voltage field, and the dielectrophoretic force is used to enrich, capture and sort specific particles (such as cells, microspheres, exosomes, etc.).

[0072] 2. When the photoelectric tweezers operation is completed, the microdroplets that have completed the operation are transferred to the digital microfluidic functional area through a micropump. The digital microfluidic functional area applies voltage to the electrodes and uses dielectric wetting force to control the movement of droplets between electrodes, thereby achieving droplet separation, mixing and high-throughput parallel operation.

[0073] 3. In the digital microfluidic functional area, according to the required functional operations (such as further processing, detection or analysis), the droplets can be driven to move freely on the chip surface by regulating the electrodes to complete a series of biochemical reactions and subsequent analysis steps.

[0074] The present invention,

[0075] At the beginning of work, the microdroplets are first injected into the photoelectric tweezers functional area through a micropump. The core component of this area is the photoconductive layer 3, which causes changes in conductivity through light stimulation. When the photoconductive layer is exposed to appropriate light, its conductivity changes significantly. Combined with the applied electric field, a non-uniform electric field is generated in the photoelectric tweezers functional area. These non-uniform electric fields can effectively capture, enrich and sort particles (cells, microspheres, exosomes) through the action of dielectrophoretic forces. In this process, dielectrophoretic forces help to orient and manipulate the target particles on the surface of the microfluidic chip for precise sorting and enrichment. This technology ensures efficient photocurrent effects and precise particle control by optimizing the choice of photoconductive layer materials (a-Si:H or ZnS, etc.).

[0076] After the photoelectric tweezers complete the operation, the microdroplets are transferred to the digital microfluidic functional area through the micropump. At this stage, the core function of the digital microfluidic functional area is to control the movement of the droplets through the precise voltage regulation of the electrodes. Specifically, the electrodes form a dielectric wetting force on the chip surface by applying appropriate voltage, driving the droplets to move freely between the electrodes. Through this process, the droplets can be separated, mixed and operated in parallel with high throughput. The beneficial effect of this technology is that it can accurately control the size, position and movement trajectory of the droplets, ensuring the efficient performance of the microfluidic chip in complex experiments, especially for biochemical analysis processes that require multi-step processing.

[0077] Once the microdroplets enter the digital microfluidic functional area, further operations can be performed as needed. For example, in this area, the droplets can be separated, mixed, heated or cooled, and even high-throughput parallel experiments can be performed. The key to these operations is the precise control of the electric field by the digital microfluidic system, which can monitor and adjust the flow state of the droplets in real time to ensure the smooth completion of various experimental requirements. In addition, the digital microfluidic functional area can be combined with subsequent detection and analysis steps to achieve fully automated operations from sample processing to data acquisition. The innovation of this technology is that by combining optoelectronic tweezers and digital microfluidic chips, it not only improves the degree of automation of operations, but also greatly improves the accuracy of particle manipulation and the flexibility of experiments.

[0078] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

[0079] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0080] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present application. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, method and equipment known to those of ordinary skill in the relevant field may not be discussed in detail, but in appropriate cases, the technology, method and equipment should be considered as a part of the authorization specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, so that once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

Claims

1. A method for manufacturing an optofluidic chip structure, comprising an upper plate and a lower plate; characterized in that: The upper plate and the lower plate are fitted together to form a photoelectric tweezers functional area and a digital microfluidic functional area, and the photoelectric tweezers functional area and the digital microfluidic functional area are plane-processed; The upper plate comprises a glass layer (1), a conductive layer (4) and a hydrophobic layer (2), and the lower plate comprises a glass layer (1), a hydrophobic layer (2), a photoconductive layer (3), a conductive layer (4), a dielectric layer (5), an electrode layer (6) and an insulating layer (7); A liquid droplet (8) is sandwiched between the upper plate and the lower plate, and the conductive layer (4) of the upper plate is connected to the conductive layer (4) of the lower plate to form a photoelectric tweezers functional area; The conductive layer (4) connected to the upper plate which is different from the photoelectric tweezers functional area and the electrode insulation mixed layer of the lower plate form a digital microfluidic functional area.

2. The method for manufacturing an optofluidic chip structure according to claim 1, characterized in that: The glass layers (1) on both sides of the conductive layer (4) of the upper plate are made of transparent materials and have a thickness of 0.55um to 1.1um; the glass layers (1) are patterned to reduce the driving voltage.

3. The method for manufacturing an optofluidic chip structure according to claim 2, characterized in that: The thickness of the conductive layer (4) on the same side of the two glass layers (1) in the upper plate is 0.2um±0.05, and the thickness of the hydrophobic layer (2) in the area of ​​the upper plate attached to the droplet (8) is 0.3-1um.

4. The method for manufacturing an optofluidic chip structure according to claim 1, characterized in that: The distance between the upper plate and the lower plate is 50um to 200um.

5. The method for manufacturing an optofluidic chip structure according to claim 1, characterized in that: The thickness of the glass layer (1) of the lower plate is 0.55um to 1.1um.

6. The method for manufacturing an optofluidic chip structure according to claim 5, characterized in that: A dielectric layer (5) having a thickness of 1 um ± 0.3 is provided on a side of the lower plate insulating electrode mixed layer away from the glass layer (1); The dielectric layer (5) fills the trench to prevent the patterned electrode from being broken down during use. The dielectric layer (5) is made of silicon carbide, silicon dioxide, silicon nitride, polyimide, hexamethyldisilazane, and others.

7. The method for manufacturing an optofluidic chip structure according to claim 6, characterized in that: The glass layer (1) of the lower plate is cross-mixed with the insulating layer (7) and the electrode layer (6) to form an insulating electrode mixed layer, and the thickness of the insulating electrode mixed layer is 0.3 to 1 um; The insulating electrode mixed layer is coated on the entire surface by PECVD or controlled sputtering to prevent breakdown with the metal layer.

8. The method for manufacturing an optofluidic chip structure according to claim 7, characterized in that: A conductive layer (4) having a thickness of 0.2 um ± 0.05 is provided on a side of the dielectric layer (5) away from the insulating electrode mixed layer; The conductive layer (4) is coated on the entire surface by PECVD or controlled sputtering to prevent breakdown of the metal layer. The material is gold, silver, copper, nickel, chromium, zinc, tin, titanium, palladium, platinum and other opaque metal materials.

9. The method for manufacturing an optofluidic chip structure according to claim 8, characterized in that: The optical guide layer (3) laid on the side of the conductive layer (4) away from the dielectric layer (5) has a thickness of 0.3 to 5 μm; The conductive layer (4) is arranged by magnetron sputtering, pecvd or other methods to form a photoconductive layer of a-siH or ZNS GaAs InAs InP GaNCdTe CdHgTe:Se and SE compounds, and different photoconductive layers (4) are selected according to different wavelengths; If the photocurrent effect is to be increased, the photoconductive layer (3) and the conductive layer (4) can be bonded to the metal layer in the form of an NPN transistor, and a hydrophobic layer (2) is arranged on the photoconductive layer (3).

10. The method for manufacturing an optofluidic chip structure according to any one of claims 1 to 9, characterized in that: The desired patterned film is plated on the insulating layer (7), and the contact position of the metal plate can be changed by TGV in a similar manner. Method 1: For example, ITO is plated on glass and the desired image is left by etching; Method 2: Put a corresponding patterned photolithography plate on the insulating layer (7) such as glass or other materials on the PCB board, and coat it by magnetron sputtering and Pecvd; Method 3: Obtain a refined image on an insulating layer (7) such as glass or other materials on a PCB board by means of coating - photolithography - development - etching - coating - debonding.

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