Composite film, photoelectric device and display device

Abstract

The invention discloses a composite film, a photoelectric device and a display device.The composite film comprises an electronic function layer and a composite function layer which are stacked, the composite function layer comprises a first function unit and a second function unit, and the first function unit and the second function unit are arranged on one side of the electronic function layer side by side; the thickness of the first functional unit is equal to that of the second functional unit, and the first functional unit comprises an NPN layer and a first nonlinear resistance layer which are stacked; and the second functional unit comprises a PNP layer and a second nonlinear resistance layer which are stacked. The invention aims to solve the problem that the stability of the electron transmission characteristic of the existing electron transmission film is poor.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic devices, and in particular to a composite film, an optoelectronic device and a display device. Background Art

[0002] Some inorganic semiconductor nanomaterials, such as nano ZnO, nano TiO2, nano SnO2, etc., have unique electron transport properties. When these materials are made into thin films, when electrons are injected, they can achieve directional electron migration under the action of the electric field, thereby realizing charge transfer. Therefore, they are widely used in the preparation of electronic functional layers with electron transport properties.

[0003] However, in actual applications, it was found that when this type of semiconductor film is in an electric field environment, as the current continues to increase, its resistance will continue to change, resulting in uneven changes in its electron transfer efficiency and poor stability of its electron transfer characteristics. Summary of the invention

[0004] In view of this, the present application provides a composite film, an optoelectronic device and a display device, aiming to solve the problem of poor stability of the electron transport characteristics of the existing electron transport film.

[0005] The embodiment of the present application is implemented as follows:

[0006] In a first aspect, the present application provides a composite film, comprising a stacked electronic functional layer and a composite functional layer, wherein the composite functional layer comprises a first functional unit and a second functional unit, wherein the first functional unit and the second functional unit are arranged side by side on one side of the electronic functional layer, and the first functional unit and the second functional unit have the same thickness, wherein:

[0007] The first functional unit includes a stacked NPN layer and a first non-linear resistance layer;

[0008] The second functional unit includes a stacked PNP layer and a second nonlinear resistance layer;

[0009] The NPN layer includes a stacked first N-type semiconductor layer, a first P-type semiconductor layer and a second N-type semiconductor layer, and the PNP layer includes a stacked second P-type semiconductor layer, a third N-type semiconductor layer and a third P-type semiconductor layer.

[0010] In a second aspect, the present application further proposes a photoelectric device, comprising a cathode, a hole functional layer and an anode, and also comprising a composite film disposed between the cathode and the hole functional layer, wherein the composite film comprises a stacked electronic functional layer and a composite functional layer, wherein the composite functional layer comprises a first functional unit and a second functional unit, wherein the first functional unit and the second functional unit are arranged side by side on one side of the electronic functional layer, and the thickness of the first functional unit and the second functional unit are equal, wherein:

[0011] The first functional unit includes a stacked NPN layer and a first non-linear resistance layer;

[0012] The second functional unit includes a stacked PNP layer and a second nonlinear resistance layer;

[0013] The NPN layer includes a stacked first N-type semiconductor layer, a first P-type semiconductor layer and a second N-type semiconductor layer, and the PNP layer includes a stacked second P-type semiconductor layer, a third N-type semiconductor layer and a third P-type semiconductor layer.

[0014] In a third aspect, the present application further proposes a display device, comprising the optoelectronic device as described above.

[0015] The present application provides a composite film, in which a composite functional layer is arranged on one side of an electronic functional layer, and the composite functional layer has a parallel NPN-PNP structure, wherein the PNP layer can reduce the electron transmission efficiency, and the NPN layer can increase the electron transmission efficiency, thereby compensating for the electron transmission efficiency of the electronic functional layer, thereby stabilizing the electron transmission performance of the film. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0017] Figure 1 It is a schematic diagram of the structure of a composite film proposed in one embodiment of the present application;

[0018] Figure 2 is a schematic structural diagram of an optoelectronic device proposed in one embodiment of the present application;

[0019] Figure 3 is a current density-current curve corresponding to the composite film obtained in the film embodiment 1 in the experimental example (I);

[0020] Figure 4is a current density-current curve corresponding to the composite film obtained from the film comparative example 1 in the experimental example (I);

[0021] Reference numerals:

[0022] 100 - photoelectric device; 10 - anode; 20 - electron transport layer; 30 - light-emitting layer; 40 - cathode; 50 - hole injection layer; 60 - hole transport layer; 70a - NPN layer; 70b - PNP layer; 80a - first nonlinear resistance layer; 80b - second nonlinear resistance layer; 74 - insulating unit. DETAILED DESCRIPTION

[0023] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application.

[0024] In this application, unless otherwise specified, the directional words used, such as "upper" and "lower", refer specifically to the directions of the drawings in the accompanying drawings. In addition, in the description of the specification of this application, the term "including" means "including but not limited to".

[0025] Various embodiments of the present application may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present application; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any cited number (fractional or integer) within the indicated range.

[0026] In this application, "and / or" describes the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0027] In the present application, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b, or c", or "at least one of a, b, and c" can all mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, c can be single or multiple, respectively.

[0028] In the first aspect, the present application proposes a composite film, see Figure 1 The composite film includes a stacked electronic functional layer and a composite functional layer, and the composite functional layer includes a first functional unit and a second functional unit arranged in the same layer, wherein: the first functional unit includes a stacked NPN layer 70a and a first nonlinear resistance layer 80a; the second functional unit includes a stacked PNP layer 70b and a second nonlinear resistance layer 80b; wherein the NPN layer 70a includes a stacked first N-type semiconductor layer, a first P-type semiconductor layer and a second N-type semiconductor layer, and the PNP layer includes a stacked second P-type semiconductor layer, a third N-type semiconductor layer and a third P-type semiconductor layer. The same layer arrangement means that the first functional unit and the second functional unit are arranged side by side on one side of the electronic functional layer, and the thickness of the first functional unit and the second functional unit are equal.

[0029] The present application provides a composite film, in which a composite functional layer is arranged on one side of an electronic functional layer, and the composite functional layer has a parallel NPN-PNP structure, wherein the PNP layer can reduce the electron transmission efficiency, and the NPN layer can increase the electron transmission efficiency, thereby compensating for the electron transmission efficiency of the electronic functional layer, thereby stabilizing the electron transmission performance of the film.

[0030] In some embodiments, in the first functional unit, the first nonlinear resistance layer 80a can be arranged on the side of the NPN layer 70a facing the electronic functional layer, for example, the stacking order is: NPN layer 70a, first nonlinear resistance layer 80a, electronic functional layer stacked in sequence; it can also be arranged on the side away from the electronic functional layer, for example, the stacking order is: first nonlinear resistance layer 80a, NPN layer 70a, electronic functional layer stacked in sequence; the present application does not impose any limitation on this.

[0031] In some embodiments, in the second functional unit, the second nonlinear resistance layer 80b can be arranged on the side of the PNP layer 70b facing the electronic functional layer, for example, the stacking order is: PNP layer 70b, second nonlinear resistance layer 80b, electronic functional layer are stacked in sequence; it can also be arranged on the side away from the electronic functional layer, for example, the stacking order is: second nonlinear resistance layer 80b, PNP layer 70b, electronic functional layer are stacked in sequence; this application is not limited to this.

[0032] In some embodiments, in the first functional unit, the first nonlinear resistance layer 80a can be arranged on a side of the first N-type semiconductor layer away from the first P-type semiconductor layer, or on a side of the second N-type semiconductor layer away from the first P-type semiconductor layer, which is not limited in the present application.

[0033] In some embodiments, in the second functional unit, the second nonlinear resistance layer 80b can be arranged on the side of the second P-type semiconductor layer away from the third N-type semiconductor layer, or on the side of the third P-type semiconductor layer away from the third N-type semiconductor layer, which is not limited in the present application.

[0034] In some embodiments, the first nonlinear resistance layer 80a includes a resistor whose resistance decreases as the current increases; in other embodiments, the second nonlinear resistance layer 80b includes a resistor whose resistance increases as the current increases.

[0035] The nonlinear resistor layer has the function of regulating the direction of current conduction and can be used to regulate the direction of current flow. Figure 3 ,When the current flowing through the composite film is small, the electronic functional layer has a high electron transfer efficiency due to its material properties, which is mainly manifested in that the slope of the current density-current curve in this low current range is high, e.g. Figure 3 In the curve, the slope is higher in the current range below 4 mA. Since the first nonlinear resistance layer 80a has a higher resistance and the second nonlinear resistance layer 80b has a lower resistance at this low current, the current injection into the PNP layer 70b can be regulated to reduce the electron transmission efficiency, thereby reversely compensating the high electron transmission efficiency of the electronic functional layer at low current and reducing the slope. When the current flowing through the composite film is large, the electronic functional layer has a lower electron transmission efficiency due to its material properties, which is mainly manifested in that the slope of the current density-current curve is lower in the high current range, for example Figure 3The middle curve has an extremely low slope in the current range higher than 4 mA. Since the first nonlinear resistance layer 80a has a lower resistance and the second nonlinear resistance layer 80b has a higher resistance at this high current, the current injection into the NPN layer 70a can be regulated to increase the electron transfer efficiency, thereby positively compensating for the low electron transfer efficiency of the electronic functional layer at high current and increasing the slope, thereby stabilizing the electron transfer performance of the film as a whole and preventing it from changing with current.

[0036] In some embodiments, the thickness of the NPN layer 70a is 20-50 nm; for example, it can be 20 nm, 30 nm, 40 nm, 50 nm, and a value between any two of the above values. Controlling the thickness of the NPN layer 70a within this range can effectively expand the current to a certain extent.

[0037] In some embodiments, the thickness of the first N-type semiconductor layer is 5-10 nm, for example, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or a value between any two of the above values.

[0038] In some embodiments, the thickness of the second N-type semiconductor layer is 5-10 nm, for example, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or a value between any two of the above values.

[0039] In some embodiments, the thickness of the first P-type semiconductor layer is 10-30 nm; for example, it can be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, or a value between any two of the above values.

[0040] In some embodiments, the thickness of the PNP layer 70b is 20 to 50 nm; for example, it can be 20 nm, 30 nm, 40 nm, 50 nm, and a value between any two of the above values. Controlling the thickness of the PNP layer 70b within this range can effectively reduce the current to a certain extent.

[0041] In some embodiments, the thickness of the third N-type semiconductor layer is 10-30 nm; for example, it can be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, or a value between any two of the above values.

[0042] In some embodiments, the thickness of the second P-type semiconductor layer is 5-10 nm, for example, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, and a value between any two of the above values.

[0043] In some embodiments, the thickness of the third P-type semiconductor layer is 5-10 nm, for example, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, and a value between any two of the above values.

[0044] In some embodiments, the projected area of ​​the NPN layer 70 a on the electron transport layer 20 is S1 , the projected area of ​​the PNP layer 70 b on the electron transport layer is S2 , and the ratio of S1 to S2 may be 1:10 to 10:1.

[0045] In some embodiments, the resistance of the first nonlinear resistor layer 80a satisfies the following requirements: when a current is applied to the first nonlinear resistor layer 80a and the current varies in the range of 2 mA to 1 A, the resistance of the first nonlinear resistor layer 80a varies in the range of 1×10 4 Ω to 4×10 -3 Ω.

[0046] The first nonlinear resistor layer 80a may be any commonly used nonlinear resistor whose resistance value can decrease as the current applied thereto increases, for example, it may include an NTC thermistor. NTC thermistor refers to a negative temperature coefficient thermistor, which is a type of sensor resistor whose resistance value decreases as the temperature increases. When applied to a composite film, when a current is applied to the composite film, the composite film will generate heat, and the heat will increase as the current increases, thereby affecting the NTC thermistor, causing its resistance value to change as the current changes, specifically, as the current increases, the resistance value of the NTC thermistor decreases.

[0047] The material of the NTC thermistor may include but is not limited to an alloy, and the alloy may be an alloy of at least two of manganese, copper, silicon, cobalt, nickel, iron, and zinc. The resistor may be purchased on the market, or may be made using the above materials with reference to conventional preparation methods in the art (e.g., evaporation or magnetron sputtering methods). In some embodiments, the resistance of the NTC thermistor meets the following requirements: when a current is applied to the NTC thermistor and the current varies within the range of 2 mA to 1 A, the resistance of the NTC thermistor varies within the range of 1×10 4 Ω to 4×10 -3 Ω.

[0048] In some specific embodiments, the thickness of the first nonlinear resistance layer 80a is 10-30 nm; for example, it can be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, or a value between any two of the above values.

[0049] In some embodiments, the resistance of the second nonlinear resistor layer 80b satisfies the following requirements: when a current is applied to the second nonlinear resistor layer 80b and the current varies in the range of 2 mA to 1 A, the resistance of the second nonlinear resistor layer 80b varies in the range of 8×10 -3 Ω to 1×10 3 Ω.

[0050] The second nonlinear resistor layer 80b may be any commonly used nonlinear resistor whose resistance value increases with the increase of the current applied thereto, for example, it may include a PTC thermistor. PTC (Positive Temperature Coefficient) refers to a thermistor with a positive temperature coefficient whose resistance increases sharply at a certain temperature; when applied to a composite film, when a current is applied to the composite film, the composite film will generate heat, which increases with the increase of the current, and then affects the PTC thermistor, causing its resistance value to change with the change of the current, specifically, as the current increases, the resistance value of the PTC thermistor increases.

[0051] The materials of the PTC thermistor include oxides, conductive carbon black and polymers, wherein the oxides include but are not limited to any one of magnesium oxide, zinc oxide, tin oxide and copper oxide, and the polymers can be one or two of polyethylene and polyimide; in the material, the mass percentage of conductive carbon black is 5-10%, and the mass percentage of the polymer is 5-10%. The resistor can be purchased on the market, or it can be made by using the above materials and referring to conventional preparation methods in the art (such as evaporation or magnetron sputtering methods).

[0052] In some specific embodiments, the thickness of the second nonlinear resistance layer 80 b is 10-30 nm; for example, it can be 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, or a value between any two of the above values.

[0053] In some embodiments, the composite film further includes an insulating unit 74, which is disposed between the first functional unit and the second functional unit so as to insulate the first functional unit from the second functional unit. The insulating unit 74 refers to a film made of an insulating material, the material of which may include but is not limited to an organic insulating material or an inorganic insulating material, the organic insulating material including one or more of polystyrene, polypropylene, polyester, polycarbonate, polytetrafluoroethylene, and polyimide; the inorganic insulating material including at least one of one or more of silicon dioxide and aluminum oxide.

[0054] In some embodiments, the insulating unit 74 has two side surfaces facing the first functional unit and the second functional unit respectively, and the spacing D between the two side surfaces is 10 to 20 nm; for example, it can be 10 nm, 12 nm, 15 nm, 17 nm, 20 nm and a value between any two of the above values.

[0055] In the composite film, the NPN layer 70a may be provided as one or more, for example, two, three or more. It should be noted that when multiple NPN layers 70a are provided, the multiple NPN layers 70a are provided in parallel, and the film structure shows that the multiple NPN layers 70a are provided in the same layer.

[0056] Correspondingly, in the case where there are multiple NPN layers 70a, one or more first nonlinear resistance layers 80a may be provided. Specifically, in some embodiments, there are two or more NPN layers 70a, one first nonlinear resistance layer 80a is provided, and two or more NPN layers 70a are provided on one first nonlinear resistance layer 80a; in other embodiments, there are two or more NPN layers 70a, and two or more first nonlinear resistance layers 80a are provided, one first nonlinear resistance layer 80a is provided corresponding to one NPN layer 70a, and two or more first nonlinear resistance layers 80a are provided on the same layer, and each first nonlinear resistance layer 80a can independently control whether current is injected into its corresponding NPN layer 70a. In this way, first nonlinear resistors with different resistance value variation ranges can be configured for multiple NPN layers 70a respectively. In this way, by matching multiple first nonlinear resistors with different resistance value variation ranges, the number of NPN layers 70a into which current is injected can be regulated when the current changes, thereby compensating the electron transmission efficiency of the electronic functional layer in different current change ranges to different degrees, thereby more accurately regulating the electron transmission efficiency.

[0057] In the composite film, the PNP layer 70b can be provided by one or more, for example, two, three or more. It should be noted that when multiple PNP layers 70b are provided, the multiple PNP layers 70b are provided in parallel, and the film layer structure shows that the multiple PNP layers 70b are provided in the same layer.

[0058] Correspondingly, in the case where there are multiple PNP layers 70b, one or more second nonlinear resistance layers 80b may be provided. Specifically, in some embodiments, there are two or more PNP layers 70b, one second nonlinear resistance layer 80b is provided, and two or more PNP layers 70b are provided on one second nonlinear resistance layer 80b; in other embodiments, there are two or more PNP layers 70b, and two or more second nonlinear resistance layers 80b are provided, one second nonlinear resistance layer 80b is provided corresponding to one PNP layer 70b, and two or more second nonlinear resistance layers 80b are provided on the same layer, and each second nonlinear resistance layer 80b can independently control whether current is injected into its corresponding PNP layer 70b. In this way, second nonlinear resistors with different resistance value variation ranges can be configured for multiple PNP layers 70b respectively. In this way, by matching multiple second nonlinear resistors with different resistance value variation ranges, the number of PNP layers 70b into which current is injected can be regulated when the current changes, thereby compensating to different degrees for the electron transmission efficiency of the electronic functional layer in different current change ranges, thereby more accurately regulating the electron transmission efficiency.

[0059] It is understandable that when multiple PNP layers 70b or multiple NPN layers 70a are provided, any two adjacent parallel film layers in the same layer are insulated from each other. Specifically, an insulating unit 74 may be provided between two adjacent parallel film layers. Taking multiple PNP layers 70b as an example, multiple PNP layers 70b are provided in the same layer, and an insulating unit 74 is provided between any two adjacent film layers in the multiple PNP layers 70b.

[0060] In some embodiments, the first N-type semiconductor layer includes a first main body material doped with a first N-type doping element, the first main body material includes silicon (Si) or germanium (Ge), and the first N-type doping element includes one or more of phosphorus (P), arsenic (As), and antimony (Sb). It is understandable that the first main body material can be pure silicon or pure germanium, or a silicon-based material with silicon as the main component, such as silicon oxide, silicon carbide, and silicon nitride, or a germanium-based material with germanium as the main component, such as germanium oxide, germanium carbide, and germanium nitride.

[0061] Further, in some embodiments, in the material of the first N-type semiconductor layer, the mass percentage of the first N-type doping element is 10-20wt%; for example, it can be 10%, 11%, 12%, 13%, 14%, 15%, 16%, 18%, 20% and a value between any two of the above values.

[0062] In some embodiments, the material of the second N-type semiconductor layer includes a second main material doped with a second N-type doping element, the second main material includes silicon or germanium, and the second N-type doping element includes one or more of phosphorus, arsenic, and antimony; it can be understood that the second main material can be pure silicon or pure germanium, or it can be a silicon-based material with silicon as the main component, such as silicon oxide, silicon carbide, silicon nitride, etc., and it can also be a germanium-based material with germanium as the main component, such as germanium oxide, germanium carbide, germanium nitride, etc.

[0063] Furthermore, in some embodiments, in the material of the second N-type semiconductor layer, the mass percentage of the second N-type doping element is 10-20wt%; for example, it can be 10%, 11%, 12%, 13%, 14%, 15%, 16%, 18%, 20% and a value between any two of the above values.

[0064] In some embodiments, the material of the first P-type semiconductor layer is selected from a third main material doped with a first P-type doping element, the third main material includes silicon or germanium, and the first P-type doping element includes one or more of boron, indium, and gallium; it can be understood that the third main material can be pure silicon or pure germanium, or it can be a silicon-based material with silicon as the main component, such as silicon oxide, silicon carbide, silicon nitride, etc., or it can be a germanium-based material with germanium as the main component, such as germanium oxide, germanium carbide, germanium nitride, etc.

[0065] Further, in some embodiments, in the material of the first P-type semiconductor layer, the mass percentage of the first P-type doping element is 10-20wt%; for example, it can be 10%, 11%, 12%, 13%, 14%, 15%, 16%, 18%, 20% and a value between any two of the above values.

[0066] In some embodiments, the third N-type semiconductor layer includes a fourth main material doped with a third N-type doping element, the fourth main material includes silicon or germanium, and the third N-type doping element includes one or more of phosphorus, arsenic, and antimony; it can be understood that the fourth main material can be pure silicon or pure germanium, or it can be a silicon-based material with silicon as the main component, such as silicon oxide, silicon carbide, silicon nitride, etc., and it can also be a germanium-based material with germanium as the main component, such as germanium oxide, germanium carbide, germanium nitride, etc.

[0067] Further, in some embodiments, in the material of the third N-type semiconductor layer, the mass percentage of the third N-type doping element is 10-20wt%; for example, it can be 10%, 11%, 12%, 13%, 14%, 15%, 16%, 18%, 20% and a value between any two of the above values.

[0068] In some embodiments, the material of the second P-type semiconductor layer includes a fifth main material doped with a second P-type doping element, the fifth main material includes silicon or germanium, and the second P-type doping element includes one or more of phosphorus, arsenic, and antimony; it can be understood that the fifth main material can be pure silicon or pure germanium, or it can be silicon-based materials with silicon as the main component, such as silicon oxide, silicon carbide, and silicon nitride, or it can be germanium-based materials with germanium as the main component, such as germanium oxide, germanium carbide, and germanium nitride.

[0069] Further, in some embodiments, in the material of the second P-type semiconductor layer, the mass percentage of the second P-type doping element is 10-20wt%; for example, it can be 10%, 11%, 12%, 13%, 14%, 15%, 16%, 18%, 20% and a value between any two of the above values.

[0070] In some embodiments, the material of the third P-type semiconductor layer is selected from a sixth main material doped with a third P-type doping element, the sixth main material includes silicon or germanium, and the third P-type doping element includes one or more of boron, indium, and gallium; it can be understood that the sixth main material can be pure silicon or pure germanium, or it can be silicon-based materials with silicon as the main component, such as silicon oxide, silicon carbide, and silicon nitride, or it can be germanium-based materials with germanium as the main component, such as germanium oxide, germanium carbide, and germanium nitride.

[0071] Further, in some embodiments, in the material of the third P-type semiconductor layer, the mass percentage of the third P-type doping element is 10-20wt%; for example, it can be 10%, 11%, 12%, 13%, 14%, 15%, 16%, 18%, 20% and a value between any two of the above values.

[0072] In some embodiments, the electronic functional layer includes one or two layers of an electron transport layer 20 and an electron injection layer, and the material of the electron transport layer 20 includes at least one of metal oxides, doped metal oxides, II-VI semiconductor materials, III-V semiconductor materials and I-III-VI semiconductor materials, the metal oxide includes at least one of ZnO, BaO, TiO2, and SnO2; the metal oxide in the doped metal oxide includes at least one of ZnO, TiO2, and SnO2, the doping element includes at least one of Al, Mg, Li, In, and Ga, the II-VI semiconductor material includes at least one of ZnS, ZnSe, and CdS; the III-V semiconductor material includes at least one of InP and GaP; the I-III-VI semiconductor material includes at least one of CuInS and CuGaS; the material of the electron injection layer includes at least one of cesium carbonate, cesium fluoride, cesium azide and lithium fluoride.

[0073] In a second aspect, an embodiment of the present application proposes an optoelectronic device 100, which refers to a device made according to the photoelectric effect, including but not limited to an organic light emitting diode (OLED), a quantum dot light emitting diode (QLED), a solar cell, and the like.

[0074] The photoelectric device 100 includes a cathode 40, an electron functional layer, a hole functional layer and an anode 10. When stimulated by light or electricity, electrons and holes are injected from the cathode 40 and the anode 10 respectively, and recombine to emit light. The balance between electron injection and hole injection is one of the important factors affecting the luminous efficiency and life of the device.

[0075] In the optoelectronic device 100 , the electronic functional layer includes one or two layers of the electron transport layer 20 and the electron injection layer, and when the electronic functional layer includes two layers of the electron transport layer 20 and the electron injection layer, the electron injection layer is located between the electron transport layer 20 and the cathode 40 . The material of the electronic functional layer is usually N-type inorganic semiconductor particles. For example, the material of the electron transport layer 20 may include at least one of metal oxides, doped metal oxides, II-VI semiconductor materials, III-V semiconductor materials and I-III-VI semiconductor materials. The metal oxide includes at least one of ZnO, BaO, TiO2, and SnO2; the metal oxide in the doped metal oxide includes at least one of ZnO, TiO2, and SnO2, and the doping element includes at least one of Al, Mg, Li, In, and Ga. The II-VI semiconductor material includes at least one of ZnS, ZnSe, and CdS; the III-V semiconductor material includes at least one of InP and GaP; the I-III-VI semiconductor material includes at least one of CuInS and CuGaS; the material of the electron injection layer may include at least one of cesium carbonate, cesium fluoride, cesium azide and lithium fluoride.

[0076] The hole functional layer includes one or both of the hole transport layer 60 and the hole injection layer 50 . When the hole functional layer includes both of the hole transport layer 60 and the hole injection layer 50 , the hole injection layer 50 is located between the hole transport layer 60 and the anode 10 . The material of the hole functional layer is generally a P-type organic material commonly used in the art. For example, the material of the hole transport layer 60 can be selected from, but not limited to, poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)diphenylamine) (TFB), polyvinylcarbazole (PVK), poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (poly-TPD), poly(9,9-dioctylfluorene-co-bis-N,N-phenyl-1,4-phenylenediamine) (PFB), 4,4',4"-tri(carbazole-9-yl)triphenylamine (TCATA), 4,4'-bis(9-carbazole)biphenyl (CBP), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl -4,4'-diamine (TPD), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB), poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonic acid) (PEDOT:PSS), Spiro-NPB, Spiro-TPD. The material of the hole injection layer 50 can be selected from but not limited to PEDOT:PSS (poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid), CuPc, TiOPc (phthalocyanine titanium oxide), m-MTDATA (CAS: 124729-98-2), 2-TNATA (4,4',4"-tris(2-naphthylphenylaminotriphenylamine)).

[0077] Among the materials listed above, the materials of the electronic functional layer often have a higher electron transfer efficiency at low current, and the slope of its current density-current curve at low current is higher; it has a lower electron transfer efficiency at high current, and the slope of its current density-current curve at high current is lower, which leads to the instability of the electron transfer efficiency of the electronic functional layer made of these materials. The materials of the hole functional layer often have a stable hole transfer efficiency, and the hole transfer efficiency remains basically unchanged when the current changes. This leads to the phenomenon of hole-electron injection imbalance in the optoelectronic device 100 during continuous testing or operation, which in turn leads to poor efficiency and stability of the device at high and low currents, hindering the commercialization of the device.

[0078] In view of this, the optoelectronic device 100 proposed in the embodiment of the present application includes a cathode 40, a hole functional layer and an anode 10. Figure 2The photoelectric device 100 further includes a composite film disposed between the cathode 40 and the hole functional layer, the composite film including a stacked electronic functional layer and a composite functional layer, the composite functional layer including a first functional unit and a second functional unit disposed in the same layer, wherein:

[0079] The first functional unit includes a stacked NPN layer 70a and a first nonlinear resistance layer 80a; the second functional unit includes a stacked PNP layer 70b and a second nonlinear resistance layer 80b;

[0080] The NPN layer 70a includes a stacked first N-type semiconductor layer, a first P-type semiconductor layer, and a second N-type semiconductor layer, and the PNP layer includes a stacked second P-type semiconductor layer, a third N-type semiconductor layer, and a third P-type semiconductor layer.

[0081] By arranging a composite functional layer on one side of the electronic functional layer, the composite functional layer has a parallel NPN-PNP structure, wherein the PNP layer can reduce the electron transmission efficiency and the NPN layer can increase the electron transmission efficiency, thereby compensating for the electron transmission efficiency of the electronic functional layer, thereby stabilizing the electron transmission performance of the film, maintaining the electron-hole injection balance during device testing or operation, and improving the luminous efficiency and stability of the device.

[0082] In some embodiments, the first nonlinear resistance layer 80a includes a resistor whose resistance decreases as the current increases; in other embodiments, the second nonlinear resistance layer 80b includes a resistor whose resistance increases as the current increases.

[0083] The nonlinear resistance layer has the function of regulating the conduction direction of the current, and can be used to regulate the flow direction of the current. When the current flowing through the composite film is small, the nonlinear resistance layer regulates the current injection into the PNP layer 70b to reduce the electron transmission efficiency, thereby reversely compensating for the high electron transmission efficiency of the electronic functional layer under low current; when the current flowing through the composite film is large, the nonlinear resistance layer regulates the current injection into the NPN layer 70a to increase the electron transmission efficiency, thereby positively compensating for the low electron transmission efficiency of the electronic functional layer under high current, thereby stabilizing the electron transmission performance of the composite film and preventing it from changing with the current, thereby maintaining the electron-hole injection balance during device testing or operation, and improving the luminous efficiency and stability of the device.

[0084] In the first functional unit, the first nonlinear resistance layer 80a can be arranged on the side of the NPN layer 70a facing the electronic functional layer, or on the side away from the electronic functional layer. In some embodiments, the first nonlinear resistance layer 80a is arranged between the NPN layer 70a and the electronic functional layer, which helps to better control the injection path of the current.

[0085] In some embodiments, in the second functional unit, the second nonlinear resistance layer 80b can be arranged on the side of the PNP layer 70b facing the electronic functional layer, or on the side away from the electronic functional layer, and the present application does not limit this. In some embodiments, the second nonlinear resistance layer 80b is arranged between the PNP layer 70b and the electronic functional layer, which helps to better regulate the injection path of the current.

[0086] In some embodiments, the thickness of the first N-type semiconductor layer is 5-10 nm; in other embodiments, the thickness of the second N-type semiconductor layer is 5-10 nm; in still other embodiments, the thickness of the first P-type semiconductor layer is 10-30 nm.

[0087] In some embodiments, the thickness of the NPN layer 70 a is 20-50 nm.

[0088] In some embodiments, the thickness of the third N-type semiconductor layer is 10-30 nm; in other embodiments, the thickness of the second P-type semiconductor layer is 5-10 nm; in yet other embodiments, the thickness of the third P-type semiconductor layer is 5-10 nm.

[0089] In some embodiments, the thickness of the PNP layer 70 b is 20-50 nm.

[0090] In some embodiments, the thickness of the first nonlinear resistance layer 80a is 10-30 nm; in other embodiments, the thickness of the second nonlinear resistance layer 80b is 10-30 nm.

[0091] In some embodiments, the resistance of the first nonlinear resistor layer 80a satisfies the following requirements: when a current is applied to the first nonlinear resistor layer 80a and the current varies in the range of 2 mA to 1 A, the resistance of the first nonlinear resistor layer 80a varies in the range of 1×10 4 Ω to 4×10 -3 Ω.

[0092] The first nonlinear resistor layer 80a may be any commonly used nonlinear resistor whose resistance value decreases as the current applied thereto increases, for example, it may include an NTC thermistor. The material of the NTC thermistor may include but is not limited to an alloy, and the alloy may be an alloy of at least two of manganese, copper, silicon, cobalt, nickel, iron, and zinc.

[0093] In some embodiments, the resistance of the second nonlinear resistor layer 80b satisfies the following requirements: when a current is applied to the second nonlinear resistor layer 80b and the current varies in the range of 2 mA to 1 A, the resistance of the second nonlinear resistor layer 80b varies in the range of 8×10 -3 Ω to 1×10 3 Ω.

[0094] The second nonlinear resistor layer 80b can be any commonly used nonlinear resistor whose resistance value can increase as the current applied thereto increases, for example, it can include a PTC thermistor. The material of the PTC thermistor includes but is not limited to any one of magnesium oxide, zinc oxide, tin oxide, and copper oxide. The resistor can be purchased on the market, or it can be prepared by adjusting the material of the resistor and referring to the conventional preparation method in the art.

[0095] In some embodiments, the anode 10 may be an anode 10 for a photoelectric device 100 known in the art, for example, may include but is not limited to a doped metal oxide particle electrode, a composite electrode of a metal and a metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode, the material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide, the composite electrode of the metal and the metal oxide includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, the material of the metal electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba.

[0096] In some embodiments, the cathode 40 can be a cathode 40 for the optoelectronic device 100 known in the art, for example, it can include but is not limited to a doped metal oxide particle electrode, a composite electrode of metal and metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode, the material of the doped metal oxide particle electrode includes one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide, the composite electrode of metal and metal oxide includes AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, and the material of the metal electrode includes one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba.

[0097] In some embodiments, the optoelectronic device 100 further includes a light-emitting layer 30, and the light-emitting layer 30 is disposed between the anode 10 and the hole functional layer. The light-emitting layer 30 may be an organic light-emitting layer 30 or a quantum dot light-emitting layer 30. When the light-emitting layer 30 is an organic light-emitting layer 30, the optoelectronic device 100 may be an organic light-emitting device; when the light-emitting layer 30 is a quantum dot light-emitting layer 30, the optoelectronic device 100 may be a quantum dot light-emitting device.

[0098] The material of the organic light-emitting layer 30 is a material known in the art for the organic light-emitting layer 30 of the optoelectronic device 100, for example, it may include but is not limited to 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, and exciplex luminescent materials. One or more of the following.

[0099] The material of the quantum dot light-emitting layer 30 is a quantum dot material known in the art for the quantum dot light-emitting layer 30 of the optoelectronic device 100, for example, including but not limited to at least one of a single structure quantum dot, a core-shell structure quantum dot and a perovskite semiconductor material; the material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot respectively include at least one of a II-VI group compound, a IV-VI group compound, a III-V group compound and a I-III-VI group compound; the II-VI group compound includes CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO , HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgT e. At least one of HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the IV-VI group The compound includes at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the III-V group compound includes GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlN P, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound includes at least one of CuInS2, CuInSe2 and AgInS2.

[0100] As an example, the core-shell structured quantum dots may include but are not limited to at least one of CdZnSe / CdZnSe / ZnSe / CdZnS / ZnS, CdZnSe / CdZnSe / CdZnS / ZnS CdSe / CdSeS / CdS, InP / ZnSeS / ZnS, CdZnSe / ZnSe / ZnS, CdSeS / ZnSeS / ZnS, CdSe / ZnS, CdSe / ZnSe / ZnS, ZnSe / ZnS, ZnSeTe / ZnS, CdSe / CdZnSeS / ZnS and InP / ZnSe / ZnS.

[0101] It should be noted that, for the material of the aforementioned single structure quantum dot, or the material of the core of the core-shell structure quantum dot, or the material of the shell of the core-shell structure quantum dot, the chemical formula provided only indicates the elemental composition, but does not indicate the content of each element. For example, CdZnSe only indicates that it is composed of three elements, Cd, Zn and Se. If the content of each element is indicated, it corresponds to Cd x Zn 1-x Se,0 <x<1。

[0102] The perovskite semiconductor material may include but is not limited to doped or undoped inorganic perovskite semiconductors, or organic-inorganic hybrid perovskite semiconductors; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of X is a halogen anion including Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of X is a halogen anion including Cl - Br - ,I - At least one of .

[0103] In addition, the present application also proposes a method for preparing a photoelectric device 100, which can be used to prepare the above-mentioned photoelectric device 100. When the photoelectric device 100 is an upright device, the preparation method includes the following steps:

[0104] S100a, providing a prefabricated device, wherein the prefabricated device includes an anode 10 and a hole functional layer;

[0105] S200a, disposing a composite thin film on the hole functional layer, the composite thin film comprising a composite functional layer and an electronic functional layer, the composite functional layer comprising a first functional unit and a second functional unit disposed in the same layer, the first functional unit comprising a stacked NPN layer 70a and a first nonlinear resistance layer 80a; the second functional unit comprising a stacked PNP layer 70b and a second nonlinear resistance layer 80b;

[0106] S300a, disposing a cathode 40 on the composite film to obtain a photoelectric device 100.

[0107] When the optoelectronic device 100 is an inverted device, the preparation method comprises the following steps:

[0108] S100b, providing a cathode 40;

[0109] S200b, a composite film is provided on the cathode 40, the composite film comprising a composite functional layer and an electronic functional layer, the composite functional layer comprising a first functional unit and a second functional unit provided in the same layer, the first functional unit comprising a stacked NPN layer 70a and a first nonlinear resistance layer 80a; the second functional unit comprising a stacked PNP layer 70b and a second nonlinear resistance layer 80b;

[0110] S300b, sequentially disposing a hole functional layer and an anode 10 on the composite film to obtain a photoelectric device 100.

[0111] Among them, the NPN layer 70a includes a stacked first N-type semiconductor layer, a first P-type semiconductor layer and a second N-type semiconductor layer, the PNP layer includes a stacked second P-type semiconductor layer, a third N-type semiconductor layer and a third P-type semiconductor layer, the first non-linear resistance layer 80a includes a resistor whose resistance decreases as the current increases, and the second non-linear resistance layer 80b includes a resistor whose resistance increases as the current increases.

[0112] In steps S200a and S200b, the first N-type semiconductor layer, the first P-type semiconductor layer, the second N-type semiconductor layer, the second P-type semiconductor layer, the third N-type semiconductor layer, the third P-type semiconductor layer, the first nonlinear resistor layer 80a, and the second nonlinear resistor layer 80b can all be formed by physical vapor deposition when preparing the film layer. The physical vapor deposition method includes but is not limited to vacuum evaporation method, vacuum sputtering method, etc. In specific implementation, the conditions for the physical vapor deposition method may include: the radio frequency is 10 to 15 MHz; the sputtering gas is argon; the vacuum degree is 10 -3 ~10 -5 pa, for example, the vacuum degree can be 1×10 -5 pa, 1.5×10 -5 pa, 5×10 -5 pa, 1×10 -4 pa, 1.5×10 -4 pa, 5×10 -4 pa, 1×10 -3 pa and any value between any two values ​​listed above.

[0113] In addition, during actual preparation, each film layer of the optoelectronic device 100, such as the anode 10, the light-emitting layer 30, the electronic functional layer, the hole functional layer and the cathode 40, can be prepared by conventional techniques in the art, such as chemical methods or physical methods. Among them, the chemical method includes chemical vapor deposition, continuous delamination adsorption and reaction, anodization, electrolytic deposition, and coprecipitation. The physical method includes physical plating and solution method, among which the physical plating method includes: thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion plating, physical vapor deposition, original layer deposition, pulsed laser deposition, etc.; the solution method can be spin coating, printing, inkjet printing, doctor blade coating, printing, dip-coating, immersion, spraying, roller coating, casting, slit coating, and strip coating, etc.

[0114] In some embodiments, after steps S300a and S300b, the step of packaging the optoelectronic device 100 is further included. The packaging process can be performed by a common machine packaging or by manual packaging. Preferably, in the packaging process environment, the oxygen content and the water content are both lower than 0.1 ppm to ensure the stability of the optoelectronic device 100.

[0115] In addition, the present application also proposes a display device, which may be a smart phone, a portable phone, a tablet computer, a personal digital assistant (PDA), a portable multimedia player (Portable Multimedia Player), a television, a game console, a watch-type electronic device, a head-mounted display, a display of a personal computer, a notebook computer, a car navigation system, a car dashboard, a digital camera, a portable camera, an external advertising board, an electro-optical board, a medical device, a detection device, a refrigerator, a washing machine, etc. The display device includes the optoelectronic device 100 as described above.

[0116] The technical scheme and technical effects of the present application are described in detail below through specific embodiments and comparative examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0117] Film Example 1

[0118] (1) A glass substrate is provided, and a first functional unit and a second functional unit are prepared on the substrate by evaporation. The structure of the first functional unit is NPN layer (30nm) / first nonlinear resistance layer (15nm), and the structure of the NPN layer is first N-type semiconductor layer (5nm) / first P-type semiconductor layer (20nm) / second N-type semiconductor layer (5nm); the structure of the second functional unit is PNP layer (30nm) / second nonlinear resistance layer (15nm), and the structure of the PNP layer is second P-type semiconductor layer (5nm) / third N-type semiconductor layer (20nm) / third P-type semiconductor layer (5nm). Specifically:

[0119] A region A and a region C with an interval of 10 nm and equal areas are divided on the glass substrate, and the interval area between the region A and the region C is defined as the region B.

[0120] In the A region, a first N-type semiconductor material is evaporated to obtain a first N-type semiconductor layer with a thickness of 5 nm, and in the C region, a second P-type semiconductor material is evaporated to obtain a second P-type semiconductor layer with a thickness of 5 nm;

[0121] Next, corresponding to the A region, a first P-type semiconductor material is evaporated on the first N-type semiconductor layer to obtain a first P-type semiconductor layer with a thickness of 20 nm, and corresponding to the C region, a third N-type semiconductor material is evaporated on the second P-type semiconductor layer to obtain a third N-type semiconductor layer with a thickness of 20 nm;

[0122] Next, corresponding to region A, a second N-type semiconductor material is evaporated on the first P-type semiconductor layer to obtain a second N-type semiconductor layer with a thickness of 5 nm. Corresponding to region C, a third P-type semiconductor material is evaporated on the third N-type semiconductor layer to obtain a third P-type semiconductor layer with a thickness of 5 nm.

[0123] Finally, corresponding to area A, nickel and manganese (atomic ratio 1:4) are evaporated on the second N-type semiconductor layer to form an NTC thermistor with a thickness of 15nm and a resistance value range of 1×10 4 Ω to 4×10 -3 Ω (when the current changes from 2 mA to 1 A), the first nonlinear resistance layer is obtained; a mixture of zinc oxide, conductive carbon black and polyethylene (mass ratio is 90:5:5) is provided, corresponding to the C area, and the mixture is evaporated on the third P-type semiconductor layer to form a PTC thermistor with a thickness of 15 nm and a resistance value change range of 8×10 -3 Ω to 1×10 3 Ω (when the current changes in the range of 2 mA to 1 A), the second nonlinear resistance layer is obtained;

[0124] A first functional unit and a second functional unit are produced.

[0125] Among them, the first N-type semiconductor material, the second N-type semiconductor material, and the third N-type semiconductor material are all phosphorus-doped silicon, and the concentration of phosphorus doping in the material is 10wt%; the first P-type semiconductor material, the second P-type semiconductor material, and the third P-type semiconductor material are all boron-doped silicon, and the concentration of boron doping in the material is 10wt%.

[0126] (2) Corresponding to the B area, polyimide is deposited between the first functional unit and the second functional unit to form an insulating unit, thereby obtaining a composite functional layer.

[0127] (3) Spin coating a ZnO ethanol solution with a concentration of 30 mg / ml on the composite functional layer, the spin coating speed is 3000 rpm, the spin coating time is 30 s, and annealing is performed at 80° C. for 30 min to obtain an electron transport layer with a thickness of 30 nm. The electron transport layer and the composite functional layer together constitute a composite thin film.

[0128] Film Example 2

[0129] The scheme of this thin film embodiment is basically the same as that of thin film embodiment 1, with the only difference being that in this thin film embodiment, the material of the electron transport layer is changed to TiO2, and other conditions and steps remain unchanged. Accordingly, in step (3), the ZnO ethanol solution is changed to the TiO2 ethanol solution.

[0130] Film Example 3

[0131] The scheme of this thin film embodiment is basically the same as that of thin film embodiment 1, with the only difference being that, in this thin film embodiment, the thickness of the first P-type semiconductor layer and the third N-type semiconductor layer are both changed to 10 nm, that is, the thickness of the NPN layer is changed to 20 nm, and the thickness of the PNP layer is changed to 20 nm; other conditions and steps remain unchanged.

[0132] Film Example 4

[0133] The scheme of this thin film embodiment is basically the same as that of thin film embodiment 1, except that, in this thin film embodiment, the thickness of the NPN layer is changed to 50 nm, the thickness of the PNP layer is changed to 50 nm, and other conditions and steps remain unchanged; specifically, the thickness of each film layer is adjusted as follows:

[0134] The structure of the NPN layer is the first N-type semiconductor layer (10nm) / the first P-type semiconductor layer (30nm) / the second N-type semiconductor layer (10nm); the structure of the PNP layer is the second P-type semiconductor layer (10nm) / the third N-type semiconductor layer (30nm) / the third P-type semiconductor layer (10nm).

[0135] Film Example 5

[0136] The scheme of this thin film embodiment is basically the same as that of thin film embodiment 1, except that in this thin film embodiment, the thickness of the NPN layer is changed to 15 nm, the thickness of the PNP layer is changed to 15 nm, and other conditions and steps remain unchanged; specifically, the thickness of each film layer is adjusted as follows:

[0137] The structure of the NPN layer is the first N-type semiconductor layer (5nm) / the first P-type semiconductor layer (5nm) / the second N-type semiconductor layer (5nm); the structure of the PNP layer is the second P-type semiconductor layer (5nm) / the third N-type semiconductor layer (5nm) / the third P-type semiconductor layer (5nm).

[0138] Film Example 6

[0139] The scheme of this thin film embodiment is basically the same as that of thin film embodiment 1, except that, in this thin film embodiment, the thickness of the NPN layer is changed to 60 nm, the thickness of the PNP layer is changed to 60 nm, and other conditions and steps remain unchanged; specifically, the thickness of each film layer is adjusted as follows:

[0140] The structure of the NPN layer is the first N-type semiconductor layer (10nm) / the first P-type semiconductor layer (40nm) / the second N-type semiconductor layer (10nm); the structure of the PNP layer is the second P-type semiconductor layer (10nm) / the third N-type semiconductor layer (40nm) / the third P-type semiconductor layer (10nm).

[0141] Film Example 7

[0142] The scheme of this thin film embodiment is basically the same as that of thin film embodiment 1, with the only difference being that, in this thin film embodiment, the second N-type semiconductor material is changed to arsenic-doped silicon, and other conditions and steps remain unchanged.

[0143] Film Example 8

[0144] The scheme of this thin film embodiment is basically the same as that of thin film embodiment 1, with the only difference being that, in this thin film embodiment, the third P-type semiconductor material is changed to indium-doped silicon, and other conditions and steps remain unchanged.

[0145] Film Example 9

[0146] The scheme of this thin film embodiment is basically the same as that of thin film embodiment 1, except that in this thin film embodiment, the main material in the NPN layer and the PNP layer is replaced by germanium instead of silicon, and other conditions and steps remain unchanged. Correspondingly:

[0147] The first N-type semiconductor material, the second N-type semiconductor material, and the third N-type semiconductor material are all phosphorus-doped germanium; the first P-type semiconductor material, the second P-type semiconductor material, and the third P-type semiconductor material are all boron-doped germanium.

[0148] Film Example 10

[0149] The scheme of this film embodiment is basically the same as that of film embodiment 1, except that, in this film embodiment, the structure of the first functional unit is the first nonlinear resistance layer (15nm) / NPN layer (30nm); the structure of the second functional unit is the second nonlinear resistance layer (15nm) / PNP layer (30nm). Accordingly, in the preparation steps:

[0150] In step (1), firstly, a first nonlinear resistor layer is prepared corresponding to region A, and a second nonlinear resistor layer is prepared corresponding to region C; then, an NPN layer is prepared on the first nonlinear resistor layer corresponding to region A, and a PNP layer is prepared on the second nonlinear resistor layer corresponding to region C;

[0151] In step (3), an electron transport layer is formed on the second N-type semiconductor layer of the NPN layer and the third P-type semiconductor layer of the PNP layer.

[0152] Except for the above changes, other conditions and film preparation methods remain unchanged.

[0153] Film Comparative Example 1

[0154] The scheme of this film comparison example is basically the same as that of film embodiment 1, with the only difference being that in this film comparison example, no composite functional layer is provided, and accordingly, in the preparation method, steps (1) to (2) are omitted, and the electron transport layer is directly prepared on the glass substrate.

[0155] Film Comparative Example 2

[0156] The scheme of this film comparison example is basically the same as that of film embodiment 2, with the only difference being that in this film comparison example, no composite functional layer is provided, and accordingly, in the preparation method, steps (1) to (2) are omitted, and the electron transport layer is directly prepared on the glass substrate.

[0157] Film Comparative Example 3

[0158] The scheme of the film comparative example is basically the same as that of the film embodiment 1, except that in the film comparative example, the composite functional layer does not include the insulating unit and the second functional unit. Accordingly, in the preparation method, steps (1) to (2) are changed to:

[0159] (1) The first functional unit is prepared by evaporation. The structure of the first functional unit is NPN layer (30nm) / first nonlinear resistance layer (15nm), and the structure of the NPN layer is first N-type semiconductor layer (5nm) / first P-type semiconductor layer (20nm) / second N-type semiconductor layer (5nm). Specifically:

[0160] The first N-type semiconductor material is evaporated on the glass substrate to obtain a first N-type semiconductor layer with a thickness of 5nm; then, the first P-type semiconductor material is evaporated on the first N-type semiconductor layer to obtain a first P-type semiconductor layer with a thickness of 20nm; then, the second N-type semiconductor material is evaporated on the first P-type semiconductor layer to obtain a second N-type semiconductor layer with a thickness of 5nm. Nickel and manganese (atomic ratio 1:4) are evaporated on the second N-type semiconductor layer to form an NTC thermistor with a thickness of 15nm, and its resistance value varies in the range of 1×10 4 Ω to 4×10 -3 Ω (when the current changes in the range of 2mA to 1A), the first nonlinear resistance layer is obtained; the first functional unit is obtained, the electron transport layer is prepared on the first functional unit, and the electron transport layer and the first functional unit together constitute a composite film.

[0161] The first N-type semiconductor material and the second N-type semiconductor material are both phosphorus-doped silicon, and the concentration of phosphorus doping in the materials is 10wt%; the first P-type semiconductor material is boron-doped silicon, and the concentration of boron doping in the material is 10wt%.

[0162] Film Comparative Example 4

[0163] The scheme of the film comparative example is basically the same as that of the film embodiment 1, except that in the film comparative example, the composite functional layer does not include the insulating unit and the first functional unit. Accordingly, in the preparation method, steps (2) to (4) are changed to:

[0164] (1) The second functional unit is prepared by evaporation. The structure of the second functional unit is PNP layer (30nm) / second nonlinear resistance layer (15nm), and the structure of the PNP layer is second P-type semiconductor layer (5nm) / third N-type semiconductor layer (20nm) / third P-type semiconductor layer (5nm). Specifically:

[0165] A second P-type semiconductor material is evaporated on a glass substrate to obtain a second P-type semiconductor layer with a thickness of 5 nm; then, a third N-type semiconductor material is evaporated on the second P-type semiconductor layer to obtain a third N-type semiconductor layer with a thickness of 20 nm; and then, a third P-type semiconductor material is evaporated on the third N-type semiconductor layer to obtain a third P-type semiconductor layer with a thickness of 5 nm. A mixture of zinc oxide, conductive carbon black and polyethylene (mass ratio of 90:5:5) is provided, and the mixture is evaporated on the third P-type semiconductor layer to form a PTC thermistor with a thickness of 15 nm, and the resistance value thereof varies in the range of 8×10 -3 Ω to 1×10 3 Ω (when the current changes in the range of 2mA to 1A), the second nonlinear resistance layer is obtained; the second functional unit is obtained, the electron transport layer is prepared on the second functional unit, and the electron transport layer and the second functional unit together constitute a composite film.

[0166] The third N-type semiconductor material is phosphorus-doped silicon, and the concentration of phosphorus doping in the material is 10wt%; the second P-type semiconductor material and the third P-type semiconductor material are both boron-doped silicon, and the concentration of boron doping in the material is 10wt%.

[0167] Device Example 1

[0168] (1) Provide an ITO anode, wipe the ITO surface with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye, then ultrasonically clean it with deionized water, acetone, anhydrous ethanol, and deionized water for 20 minutes, and then blow dry it with nitrogen for later use.

[0169] (2) Spin coating the PEDOT:PSS material on the anode at a rotation speed of 3000 rpm for 30 seconds and annealing at 100° C. for 10 minutes to obtain a hole injection layer with a thickness of 50 nm.

[0170] (3) The surface of the hole injection layer was spin-coated with TFB chlorobenzene solution at a speed of 3000 r / min for 30 s and annealed at 150° C. for 30 min to obtain a hole transport layer with a thickness of 40 nm.

[0171] (4) Spin coating a hexane solution of CdSe blue quantum dots on the hole transport layer at a rotation speed of 3000 rpm for 30 s and annealing at 80° C. for 30 min to obtain a light-emitting layer with a thickness of 20 nm.

[0172] (5) A composite thin film is prepared on the light-emitting layer. The preparation steps of the composite thin film refer to the thin film embodiment 1. In the specific operation, the glass substrate in step (1) of the thin film embodiment 1 is replaced with the light-emitting layer, thereby sequentially preparing the composite functional layer and the electron transport layer.

[0173] (6) Place the sheet prepared in step (5) into a vacuum coating machine and set the evaporation conditions to: vacuum degree 4×10 - 6 mbar, the evaporation temperature is 350℃, the evaporation rate is 3 angstroms / min, and the electrode is evaporated on the surface of the electron transport layer with Al target to obtain a cathode with a thickness of 30nm, which is then packaged in an environment where the oxygen content and water content are both lower than 0.1ppm to obtain a QLED device.

[0174] Device Examples 2 to 10

[0175] The scheme of device embodiment n is basically the same as embodiment 1, with the only difference being that in device embodiment n, in step (5), the preparation steps of the composite film refer to those of film embodiment n, where n is any integer from 2 to 10.

[0176] Device Comparative Example 1

[0177] The scheme of device comparative example m is basically the same as that of device embodiment 1, except that in device comparative example m, in step (5), the preparation steps of the composite film refer to that of film comparative example m, where m is 1 to 4.

[0178] Experimental example

[0179] (i) Take the composite film prepared in the film examples and film comparison examples.

[0180] With reference to the device embodiments or device comparison examples corresponding to each composite film, a single electron device (EOD) of each composite film is prepared. The current density-current curve of the device at 4V is collected by JVL equipment (Fushida), and then the average slope K1 when the current is less than or equal to 4mA (low current) and the average slope K2 when the current is greater than 4mA (high current) are calculated according to the curve. Among them, the preparation method of the single electron device is: compared with the corresponding device embodiment or device comparison example, the hole transport layer and the hole injection layer are missing.

[0181] At the same time, a corresponding single-hole device (compared with the corresponding device embodiment or device comparison example, lacking the composite film) was prepared, and its current density-current curve at 4V was tested, and the average slope of the curve of the single-hole device was counted as 1 as a comparison standard.

[0182] Results Figure 3 , Figure 4 And Table 1.

[0183] Table 1

[0184]

[0185]

[0186] contrast Figure 3 and Figure 4 It can be seen that Figure 4 In the figure, the slope of the curve of the single electron device of thin film comparative example 1 is higher when the current is lower than 4 mA, and lower when the current is higher than 4 mA. The current density change of the single electron device is much different from that of the single hole device, indicating that the stability of its electron transmission is poor. Figure 3 In the figure, the curve of the single electron device of thin film embodiment 1 is closer to the curve of the single hole device as a whole, and the slope of the curve of the single electron device changes less at low current and high current, indicating that the composite film provided by thin film embodiment 1 has a higher temperature electron transfer efficiency;

[0187] In addition, referring to Table 1, it can be seen that, compared with film comparative examples 1 to 4, K1 and K2 of each film embodiment are not only closer, but also closer to 1, indicating that the electron transfer efficiency of the composite film prepared by each film embodiment is more stable.

[0188] (II) The devices prepared in the above device embodiments and device comparative examples were tested for CE (current efficiency), life T95 and T95@1000nit. The detection method was based on the conventional method in the art, and the results were recorded in Table 2. Wherein:

[0189] The lifespan T95@1000nit indicates the time required for the brightness of the device to decrease to a certain percentage of the maximum brightness when driven by a constant current or voltage. The time when the brightness drops to 95% of the maximum brightness is defined as T95, and this lifespan is the measured lifespan. In order to shorten the test cycle, the device lifespan test is usually carried out at high brightness by accelerating device aging, and the lifespan at high brightness is obtained by fitting the extended exponential decay brightness attenuation fitting formula. For example, the lifespan at 1000nit is calculated as T95@1000nit. The specific calculation formula is as follows:

[0190]

[0191] Among them, T95 L For lifespan at low brightness, T95 H is the measured lifetime under high brightness, L H To accelerate the device to the highest brightness, L L is 1000nit, A is the acceleration factor, and this experiment measured the lifespan of several groups of QLED devices at rated brightness and found that the A value was 1.7.

[0192] Table 2

[0193]

[0194]

[0195] Referring to Table 2, it can be seen that compared with device comparison examples 1 to 4, thin film embodiments 1 to 10 have higher CE, life T95 and T95@1000nit, indicating that the present application helps to improve the carrier balance of the device and improve the luminescence effect and service life of the device by setting a composite functional layer on one side of the electron transport layer.

[0196] The composite film, optoelectronic device and display device provided in the embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A composite film, characterized in that: The invention comprises a stacked electronic functional layer and a composite functional layer, wherein the composite functional layer comprises a first functional unit and a second functional unit, wherein the first functional unit and the second functional unit are arranged in parallel on one side of the electronic functional layer, wherein: The first functional unit includes a stacked NPN layer and a first non-linear resistance layer; The second functional unit includes a stacked PNP layer and a second nonlinear resistance layer; The NPN layer includes a stacked first N-type semiconductor layer, a first P-type semiconductor layer and a second N-type semiconductor layer, and the PNP layer includes a stacked second P-type semiconductor layer, a third N-type semiconductor layer and a third P-type semiconductor layer.

2. The composite film according to claim 1, characterized in that In the first functional unit, the first nonlinear resistor layer is arranged close to the electronic functional layer; and / or, In the second functional unit, the second nonlinear resistance layer is arranged close to the electronic functional layer; and / or, The first nonlinear resistance layer includes a resistor whose resistance decreases as the current increases; and / or, The second nonlinear resistance layer includes a resistor whose resistance increases as the current increases.

3. The composite film according to claim 1, characterized in that The thickness of the NPN layer is 20 to 50 nm; and / or, The thickness of the PNP layer is 20 to 50 nm; and / or, The thickness of the first nonlinear resistance layer is 10-30 nm; and / or, The thickness of the second nonlinear resistance layer is 10-30 nm; and / or, The thickness of the first N-type semiconductor layer is 5-10 nm; and / or, The thickness of the second N-type semiconductor layer is 5-10 nm; and / or, The thickness of the first P-type semiconductor layer is 10-30 nm; and / or, The thickness of the third N-type semiconductor layer is 10-30 nm; and / or, The thickness of the second P-type semiconductor layer is 5-10 nm; and / or, The thickness of the third P-type semiconductor layer is 5-10 nm.

4. The composite film according to claim 1, characterized in that When a current is applied to the first nonlinear resistor layer and the current varies in the range of 2 mA to 1 A, the resistance value of the first nonlinear resistor layer varies in the range of 1×10 4 Ω to 4×10 -3 Ω; and / or, When a current is applied to the second nonlinear resistor layer and the current varies in the range of 2 mA to 1 A, the resistance value of the second nonlinear resistor layer varies in the range of 8×10 -3 Ω to 1×10 3 Ω.

5. The composite film according to claim 1, characterized in that The second non-linear resistance layer comprises a PTC thermistor; and / or, The first non-linear resistance layer includes an NTC thermistor.

6. The composite film according to claim 1, characterized in that: The first N-type semiconductor layer includes a first main material doped with a first N-type doping element, the first main material includes silicon or germanium, and the first N-type doping element includes one or more of phosphorus, arsenic, and antimony; and / or, The material of the second N-type semiconductor layer includes a second main material doped with a second N-type doping element, the second main material includes silicon or germanium, and the second N-type doping element includes one or more of phosphorus, arsenic, and antimony; and / or, The material of the first P-type semiconductor layer is selected from a third main material doped with a first P-type doping element, the third main material includes silicon or germanium, and the first P-type doping element includes one or more of boron, indium, and gallium; and / or, The third N-type semiconductor layer includes a fourth main material doped with a third N-type doping element, the fourth main material includes silicon or germanium, and the third N-type doping element includes one or more of phosphorus, arsenic, and antimony; and / or, The material of the second P-type semiconductor layer includes a fifth main material doped with a second P-type doping element, the fifth main material includes silicon or germanium, and the second P-type doping element includes one or more of phosphorus, arsenic, and antimony; and / or, The material of the third P-type semiconductor layer is selected from a sixth main material doped with a third P-type doping element, the sixth main material includes silicon or germanium, and the third P-type doping element includes one or more of boron, indium, and gallium.

7. The composite film according to claim 6, characterized in that: In the material of the first N-type semiconductor layer, the mass percentage of the first N-type doping element is 10-20%; and / or, In the material of the second N-type semiconductor layer, the mass percentage of the second N-type doping element is 10-20%; and / or, In the material of the first P-type semiconductor layer, the mass percentage of the first P-type doping element is 10-20%; and / or, In the material of the third N-type semiconductor layer, the mass percentage of the third N-type doping element is 10-20%; and / or, In the material of the second P-type semiconductor layer, the mass percentage of the second P-type doping element is 10-20%; and / or, In the material of the third P-type semiconductor layer, the mass percentage of the third P-type doping element is 10-20%.

8. The composite film according to claim 1, characterized in that The electronic functional layer includes one or two layers of an electron transport layer and an electron injection layer. The material of the electron transport layer includes at least one of metal oxides, doped metal oxides, II-VI semiconductor materials, III-V semiconductor materials and I-III-VI semiconductor materials. The metal oxide includes at least one of ZnO, BaO, TiO2 and SnO2; the metal oxide in the doped metal oxide includes at least one of ZnO, TiO2 and SnO2, the doping element includes at least one of Al, Mg, Li, In and Ga, the II-VI semiconductor material includes at least one of ZnS, ZnSe and CdS; the III-V semiconductor material includes at least one of InP and GaP; the I-III-VI semiconductor material includes at least one of CuInS and CuGaS; the material of the electron injection layer includes at least one of cesium carbonate, cesium fluoride, cesium azide and lithium fluoride.

9. The composite film according to claim 1, characterized in that: The composite film further includes an insulating unit, and the insulating unit is arranged between the first functional unit and the second functional unit.

10. The composite film according to claim 9, characterized in that The material of the insulating unit includes an organic insulating material or an inorganic insulating material, wherein the organic insulating material includes one or more of polystyrene, polypropylene, polyester, polycarbonate, polytetrafluoroethylene, and polyimide; the inorganic insulating material includes one or more of silicon dioxide and aluminum oxide; and / or, The insulating unit has two side surfaces facing the first functional unit and the second functional unit respectively, and a distance between the two side surfaces is 10-20 nm.

11. A photoelectric device comprising a cathode, a hole functional layer and an anode, characterized in that: It also includes a composite film disposed between the cathode and the hole functional layer, the composite film includes a stacked electronic functional layer and a composite functional layer, the composite functional layer includes a first functional unit and a second functional unit, the first functional unit and the second functional unit are arranged side by side on one side of the electronic functional layer, and the first functional unit and the second functional unit have the same thickness, wherein: The first functional unit includes a stacked NPN layer and a first non-linear resistance layer; The second functional unit includes a stacked PNP layer and a second nonlinear resistance layer; The NPN layer includes a stacked first N-type semiconductor layer, a first P-type semiconductor layer and a second N-type semiconductor layer, and the PNP layer includes a stacked second P-type semiconductor layer, a third N-type semiconductor layer and a third P-type semiconductor layer.

12. The optoelectronic device according to claim 11, characterized in that: The first nonlinear resistance layer is provided between the NPN layer and the electronic functional layer; and / or, The second nonlinear resistance layer is disposed between the PNP layer and the electronic functional layer; and / or, The first nonlinear resistance layer includes a resistor whose resistance decreases as the current increases; and / or, The second nonlinear resistance layer includes a resistor whose resistance increases as the current increases.

13. The optoelectronic device according to claim 11, characterized in that: The thickness of the first N-type semiconductor layer is 5-10 nm; and / or, The thickness of the second N-type semiconductor layer is 5-10 nm; and / or, The thickness of the first P-type semiconductor layer is 10-30 nm; and / or, The thickness of the NPN layer is 20 to 50 nm; and / or, The thickness of the third N-type semiconductor layer is 10-30 nm; and / or, The thickness of the second P-type semiconductor layer is 5-10 nm; and / or, The thickness of the third P-type semiconductor layer is 5-10 nm; and / or, The thickness of the PNP layer is 20 to 50 nm; and / or, The thickness of the first nonlinear resistance layer is 10-30 nm; and / or, The thickness of the second nonlinear resistance layer is 10-30 nm.

14. The optoelectronic device according to claim 11, characterized in that: When a current is applied to the first nonlinear resistor layer and the current varies in the range of 2 mA to 1 A, the resistance value of the first nonlinear resistor layer varies in the range of 1×10 4 Ω to 4×10 -3 Ω; and / or, When a current is applied to the second nonlinear resistor layer and the current varies in the range of 2 mA to 1 A, the resistance value of the second nonlinear resistor layer varies in the range of 8×10 -3 Ω to 1×10 3 Ω; and / or, The second non-linear resistance layer comprises a PTC thermistor; and / or, The first non-linear resistance layer comprises an NTC thermistor; and / or, The first N-type semiconductor layer includes a first main material doped with a first N-type doping element, the first main material includes silicon or germanium, and the first N-type doping element includes one or more of phosphorus, arsenic, and antimony; and / or, The material of the second N-type semiconductor layer includes a second main material doped with a second N-type doping element, the second main material includes silicon or germanium, and the second N-type doping element includes one or more of phosphorus, arsenic, and antimony; and / or, The material of the first P-type semiconductor layer is selected from a third main material doped with a first P-type doping element, the third main material includes silicon or germanium, and the first P-type doping element includes one or more of boron, indium, and gallium; and / or, The third N-type semiconductor layer includes a fourth main material doped with a third N-type doping element, the fourth main material includes silicon or germanium, and the third N-type doping element includes one or more of phosphorus, arsenic, and antimony; and / or, The material of the second P-type semiconductor layer includes a fifth main material doped with a second P-type doping element, the fifth main material includes silicon or germanium, and the second P-type doping element includes one or more of phosphorus, arsenic, and antimony; and / or, The material of the third P-type semiconductor layer is selected from a sixth main material doped with a third P-type doping element, the sixth main material includes silicon or germanium, and the third P-type doping element includes one or more of boron, indium, and gallium.

15. The optoelectronic device according to claim 11, wherein the cathode and the anode independently comprise a doped metal oxide particle electrode, a composite electrode of metal and metal oxide, a graphene electrode, a carbon nanotube electrode, a metal electrode or an alloy electrode, the material of the doped metal oxide particle electrode comprises one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide, the composite electrode of metal and metal oxide comprises AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, the material of the metal electrode comprises one or more of Ag, Al, Cu, Mo, Au, Pt, Si, Ca, Mg and Ba; and / or, The optoelectronic device further comprises a light-emitting layer, which is arranged between the composite functional layer and the anode. The material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot light-emitting material. The organic light-emitting material comprises 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials , TBRb fluorescent material, DBP fluorescent material, delayed fluorescent material, TTA material, thermally activated delayed material, polymer containing BN covalent bond, hybrid localized charge transfer excited state material, exciplex luminescent material or more, the quantum dot luminescent material includes at least one of single structure quantum dots, core-shell structure quantum dots and perovskite semiconductor material; the material of the single structure quantum dot, the core material of the core-shell structure quantum dot and the shell material of the core-shell structure quantum dot include II-VI group compounds, IV-VI group compounds, III-V group compounds and I-II At least one of the I-VI group compounds; the II-VI group compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, Cd At least one of ZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe; the IV-VI group compound includes at least one of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe;The III-V compounds include GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, and AlN P, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInN P, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb; the I-III-VI group compound includes at least one of CuInS2, CuInSe2 and AgInS2; the perovskite semiconductor material includes a doped or undoped inorganic perovskite semiconductor, or an organic-inorganic hybrid perovskite semiconductor; the inorganic perovskite semiconductor has a general structural formula of AMX3, wherein A is Cs; + ions, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of X is a halogen anion including Cl - Br - ,I - At least one of the following; the general structural formula of the organic-inorganic hybrid perovskite semiconductor is BMX3, wherein B is an organic amine cation, including CH3(CH2) n-2 NH3 + or [NH3(CH2) n NH3] 2+ , where n≥2, M is a divalent metal cation, including Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ 、Eu 2+ At least one of X is a halogen anion including Cl - Br - ,I - At least one of .

16. A display device, characterized in that: The optoelectronic device comprises the optoelectronic device according to any one of claims 11 to 15.

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