An apparatus, method, and atomic gas chamber preparation method

Abstract

This invention relates to the field of atomic gas cell fabrication technology, and discloses an atomic gas cell fabrication apparatus, method, and atomic gas cell. The apparatus includes a vacuum chamber, a wafer bonding machine, and an alkali metal injection device. The alkali metal injection device includes a vacuum pump, an injection valve body, a heating element, a vacuum impactor, and a vacuum probe array. The alkali metal injection and bonding processes are both carried out in a vacuum environment, which effectively avoids the oxidation of alkali metals by oxygen in the atmospheric environment, thus preventing it from affecting the quality of the atomic gas cell. At the same time, it prevents external particulate matter from adhering between the gas cell components and the gas cell sealing plate, affecting the bonding effect and sealing performance. This effectively reduces the leakage rate of the atomic gas cell. In other words, the atomic gas cells fabricated by this apparatus have a high yield and high fabrication efficiency.

Description

Technical Field

[0001] This invention relates to the field of atomic gas chamber preparation technology, and in particular to an atomic gas chamber preparation apparatus, method, and atomic gas chamber. Background Technology

[0002] Chip-based atomic clocks and gyroscopes play crucial roles in positioning and navigation, with MEMS atomic gas cells being their core components. These atomic gas cells offer advantages such as small size and mass production capability. Currently, a widely used method for fabricating MEMS atomic gas cells involves reacting compounds to generate alkali metals, which are then collected or encapsulated within MEMS microstructures. For example, alkali metals can be directly injected into the MEMS structure followed by encapsulation. However, the easy oxidation of alkali metals leads to low yield and poor product quality. Another approach uses two chambers: one for generating the alkali metal and the other for light-to-alkali metal interaction, separating residual alkali metals and increasing the intensity of the light-to-alkali metal interaction. However, this method suffers from low efficiency and, due to the two-chamber design, low bonding yield and large finished MEMS gas cell volume. In short, current technologies, whether directly injecting alkali metals into MEMS microstructures to reduce impurities or using a dual-chamber approach to separate reaction residues, both suffer from low product quality and yield. Summary of the Invention

[0003] Based on the above, the purpose of this invention is to provide an atomic gas chamber preparation device, method, and atomic gas chamber, which solves the technical problem of easy oxidation of alkali metals in the prior art, has a high degree of automation, and produces atomic gas chambers of better quality with a low leakage rate.

[0004] To achieve the above objectives, the present invention adopts the following technical solution:

[0005] An atomic gas cell preparation apparatus, wherein the prepared atomic gas cell includes a gas cell sealing plate and a gas cell component, one side of the gas cell component has a plurality of spaced-apart receiving grooves, and the gas cell sealing plate closes the side of the gas cell component having the receiving grooves. The apparatus is characterized in that it includes a vacuum chamber, a wafer bonding machine, and an alkali metal injection device; the vacuum degree inside the vacuum chamber is adjustable; and the alkali metal injection device includes a vacuum pump, an injection valve body, a heating element, a vacuum impactor, and a vacuum probe array.

[0006] The injection valve body is disposed outside the vacuum chamber. The injection valve body has a placement cavity for placing a glass bulb containing alkali metal. The injection valve body has a vacuum port and an injection port that communicate with the placement cavity. The vacuum pump is connected to the vacuum port.

[0007] The vacuum probe array is disposed inside the vacuum chamber and may or may not be connected to the injection port;

[0008] The vacuum striker is movably disposed within the placement cavity and is used to break the glass bulb;

[0009] The heating element is attached to the body of the injection valve to generate heat to liquefy the alkali metal. When the vacuum probe is connected to the injection port, the liquefied alkali metal is injected into each of the receiving tanks through the injection port and the vacuum probe.

[0010] The wafer bonding machine is installed inside the vacuum chamber and is used to bond the gas chamber sealing plate and the gas chamber components.

[0011] As a preferred embodiment of an atomic gas chamber preparation device, the vacuum chamber is provided with a mounting hole, the vacuum probe array is connected to the inner end of the mounting hole, the injection port is connected to the outer end of the mounting hole, and a valve is provided at the mounting hole to control the opening and closing of the mounting hole.

[0012] As a preferred embodiment of an atomic gas chamber preparation device, the vacuum probe array includes a connector plate and a plurality of vacuum probes arranged in an array on the connector plate. The plurality of vacuum probes can be inserted one by one into the plurality of receiving slots. The connector plate has an inner cavity and an interface communicating with the inner cavity. The interface is sealed and connected to the mounting hole. The plurality of vacuum probes communicate with the inner cavity.

[0013] As a preferred embodiment of an atomic gas chamber preparation device, the alkali metal injection device further includes a drive source and a bellows. The bellows is disposed in the placement cavity, with one end of the bellows sealed to the inner wall of the placement cavity. The vacuum impact pin is sleeved inside the bellows and partially extends out of the other end of the bellows in a sealed manner. The drive source can drive the vacuum impact pin to move.

[0014] As a preferred embodiment of an atomic gas chamber preparation device, the alkali metal injection device further includes a sealing blind plate, and the injection valve body also has a placement port communicating with the placement cavity. The sealing blind plate is detachably and sealingly connected to the placement port, and the glass bulb can enter the placement cavity from the placement port.

[0015] As a preferred embodiment of an atomic gas chamber preparation device, the alkali metal injection device further includes a gas cylinder, and the injection valve body also has an inflation port communicating with the placement cavity. The gas cylinder is connected to the inflation port for filling with pressurized gas.

[0016] As a preferred embodiment of an atomic gas cell fabrication device, it further includes a vacuum manipulator and a gas cell sealing plate placement stage disposed within the vacuum chamber. The gas cell sealing plate is placed on the gas cell sealing plate placement stage. The vacuum manipulator is used to move the gas cell component to align with the vacuum probe and to place it in the wafer bonding machine. It is also used to move the gas cell sealing plate to place it on the gas cell component.

[0017] A method for preparing an atomic gas chamber, comprising:

[0018] A glass bulb containing alkali metal is placed in the placement cavity, at which point the injection port and the vacuum probe are not in communication.

[0019] Turn on the vacuum pump to evacuate the placement chamber to a first preset vacuum level, and adjust the vacuum level inside the vacuum chamber to a second preset vacuum level;

[0020] Align the receiving groove of the gas chamber component with the vacuum probe array;

[0021] Move the vacuum striker until it breaks the glass bulb, turn on the heating element, and liquefy the alkali metal;

[0022] The injection port is connected to the vacuum probe, and the liquefied alkali metal is injected into the receiving tank through the vacuum probe.

[0023] The gas chamber component containing the alkali metal and the gas chamber sealing plate are placed into the wafer bonding machine;

[0024] The wafer bonding machine is turned on, and the wafer bonding machine bonds the gas chamber component and the gas chamber sealing plate to form the atomic gas chamber.

[0025] As a preferred embodiment of the atomic gas chamber preparation method, the atomic gas chamber preparation equipment further includes a gas cylinder, and the injection valve body further has an inflation port communicating with the placement cavity. The gas cylinder is connected to the inflation port. After connecting the injection port to the vacuum probe, the atomic gas chamber preparation method further includes:

[0026] The control valve of the gas cylinder is opened, and the pressurized gas in the gas cylinder enters the placement chamber, and the liquefied alkali metal is sent to the vacuum probe.

[0027] An atomic gas chamber is prepared by the atomic gas chamber preparation method described above.

[0028] The beneficial effects of this invention are as follows:

[0029] This invention provides an atomic gas cell preparation device in which the injection and bonding processes of alkali metals are carried out in a vacuum environment. This effectively avoids the oxidation of alkali metals by oxygen in the atmosphere, which would affect the quality of the atomic gas cell. At the same time, it avoids external particulate matter from adhering between the gas cell components and the gas cell sealing plate, which would affect the bonding effect and sealing performance. This effectively reduces the leakage rate of the atomic gas cell. In other words, the atomic gas cell prepared by this device has a high yield and high preparation efficiency.

[0030] The present invention also provides a method for preparing atomic gas cells. Based on the above-mentioned atomic gas cell preparation equipment, the method is simple to operate, has high preparation efficiency, and produces atomic gas cells of good quality with low leakage rate.

[0031] The present invention also provides an atomic gas chamber, which has the advantages of better quality and lower leakage rate. Attached Figure Description

[0032] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the content of the embodiments of the present invention and these drawings without creative effort.

[0033] Figure 1 This is a schematic diagram of the atomic gas chamber preparation device provided in an embodiment of the present invention;

[0034] Figure 2 This is a cross-sectional view of the alkali metal injection device provided in an embodiment of the present invention;

[0035] Figure 3 This is a cross-sectional view of the injection valve body provided in an embodiment of the present invention;

[0036] Figure 4 This is a cross-sectional view of the air chamber component provided in an embodiment of the present invention;

[0037] Figure 5 This is a cross-sectional view of the atomic gas chamber provided in an embodiment of the present invention;

[0038] Figure 6 This is a flowchart of the atomic gas chamber preparation method provided in the embodiments of the present invention.

[0039] In the picture:

[0040] 1. Vacuum chamber;

[0041] 2. Wafer bonding machine; 21. Processing table; 22. Pressure and temperature control panel; 23. High-voltage discharge needle;

[0042] 3. Alkali metal injection device; 31. Injection valve body; 32. Heating element; 33. Vacuum impact pin; 34. Vacuum probe array; 341. Connector plate; 342. Vacuum probe; 35. Bellows; 36. Baffle plate;

[0043] 4. Vacuum robotic arm; 5. Gas chamber sealing plate placement platform;

[0044] 10. Placement cavity; 20. Vacuum port; 30. Injection port; 40. Mounting hole; 50. Inflation port;

[0045] 100. Gas chamber component; 200. Gas chamber sealing plate; 300. Glass bulb; 400. Alkali metal. Detailed Implementation

[0046] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0047] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0048] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0049] In the description of this embodiment, the terms "upper," "lower," "left," and "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used solely for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In the description of the present invention, unless otherwise stated, "a plurality of" means two or more. Furthermore, the terms "first" and "second" are merely used for descriptive distinction and have no special meaning.

[0050] like Figures 1 to 5 As shown, this embodiment provides an atomic gas cell preparation device for preparing MEMS alkali metal 400 atomic gas cells. The prepared atomic gas cell includes a gas cell sealing plate 200 and a gas cell component 100. One side of the gas cell component 100 has a plurality of spaced-apart receiving grooves, and the gas cell sealing plate 200 is closed on the side of the gas cell component 100 with receiving grooves.

[0051] Specifically, the atomic chamber fabrication equipment includes a vacuum chamber 1, a wafer bonding machine 2, and an alkali metal 400 injection device 3. The vacuum level in the vacuum chamber 1 is adjustable. The alkali metal 400 injection device 3 is used to inject liquid alkali metal 400 into the chamber component 100 under vacuum conditions. The wafer bonding machine 2 is used to bond and seal the chamber component 100 and the chamber sealing plate 200 under vacuum conditions to obtain the atomic chamber. The injection and bonding processes of alkali metal 400 are both carried out under vacuum conditions, which can effectively prevent the oxidation of alkali metal 400 by oxygen in the atmospheric environment, thus avoiding the impact on the quality of the atomic chamber. At the same time, it can prevent external particulate matter from adhering between the chamber component 100 and the chamber sealing plate 200, affecting the bonding effect and sealing performance. This can effectively reduce the leakage rate of the atomic chamber. In other words, the atomic chambers prepared by this equipment have a high yield and high preparation efficiency.

[0052] The atomic gas chamber preparation equipment also includes a vacuum pumping device, which is connected to the vacuum chamber 1. The vacuum pumping device evacuates the vacuum chamber 1, thereby adjusting the vacuum level within it. For example, the vacuum level inside the vacuum chamber 1 is E-3 Pa, but the specific setting depends on actual requirements.

[0053] More specifically, the alkali metal 400 injection device 3 includes a vacuum pump, an injection valve body 31, a heating element 32, a vacuum striker 33, and a vacuum probe array 34. The injection valve body 31 is located outside the vacuum chamber 1 and has a placement cavity 10 inside. The placement cavity 10 is used to place a glass bulb 300 containing alkali metal 400. The injection valve body 31 has a vacuum port 20 and an injection port 30 communicating with the placement cavity 10. The vacuum pump is connected to the vacuum port 20. The vacuum pump evacuates the injection valve body 31, causing the placement cavity 10 to become evacuated. The vacuum level reaches a preset value to avoid oxidation during the subsequent injection of alkali metal 400; the vacuum probe array 34 is set inside the vacuum chamber 1 and may or may not be connected to the injection port 30; the vacuum impact pin 33 is movably set inside the placement cavity 10 to break the glass bulb 300; the heating element 32 is attached to the outside of the injection valve body 31 to generate heat to liquefy the alkali metal 400; when the vacuum probe 342 is connected to the injection port 30, the liquefied alkali metal 400 is injected into each receiving tank through the injection port 30 and the vacuum probe array 34. Alkali metal 400 is encased in a glass bulb 300 to isolate it from oxygen in the atmosphere. A vacuum environment is then created in the placement chamber 10, ensuring that the alkali metal 400 remains in a vacuum after the vacuum probe 33 breaks the glass bulb 300, preventing oxidation. The alkali metal 400 is then liquefied by heating with a heating element 32, allowing it to be smoothly injected along the vacuum probe array 34 into the gas chamber component 100 located in the vacuum environment. This ensures the injection of alkali metal 400 without contact with oxygen throughout the process, guaranteeing the quality of the resulting atomic gas chamber. Finally, the gas chamber sealing plate 200 and the gas chamber component 100 are bonded using a wafer bonding machine 2, resulting in an atomic gas chamber with low leakage and high quality.

[0054] Preferably, the internal space of the injection valve body 31 is provided with a baffle plate 36, which divides the internal space of the injection valve body 31 into a placement chamber 10 and a flow chamber. The baffle plate 36 is used to block the broken glass bulb 300 fragments and keep the glass bulb 300 fragments in the placement chamber 10. At the same time, the liquid alkali metal 400 flows smoothly through the baffle plate 36 to the injection port 30, avoiding the glass bulb 300 fragments from clogging the injection port 30 or the vacuum probe row 34, and facilitating the cleaning of the glass bulb 300 fragments in the placement chamber 10.

[0055] The vacuum pump and the vacuum evacuation device can be of the same structure, that is, one vacuum pump is used to evacuate the vacuum chamber 1 and the placement chamber 10 respectively. Alternatively, the vacuum pump and the vacuum evacuation device can be of different structures, that is, two vacuum pumps are used to evacuate the vacuum chamber 1 and the placement chamber 10 respectively. The specific configuration depends on the actual needs.

[0056] Optionally, the heating element 32 is a heating wire, which is wound around the outside of the injection valve body 31. The heating wire is connected to an external power source, which supplies power to the heating wire, causing it to generate heat. This design is simple and low-cost. Preferably, the injection valve body 31 has a spiral mounting groove on its outside, in which the heating wire is embedded, improving the appearance and compactness of the alkali metal 400 injection device 3. Of course, in other embodiments, the heating element 32 can also be other types, such as a semiconductor heating plate, which is attached to the outside of the injection valve body 31.

[0057] Specifically, the alkali metal 400 injection device 3 also includes a sealing blind plate, and the injection valve body 31 has a placement port communicating with the placement cavity 10. The sealing blind plate is detachably and sealingly connected to the placement port, allowing the glass bulb 300 to enter the placement cavity 10 through the placement port. When preparing the atomic gas chamber, the sealing blind plate is opened, the glass bulb 300 encapsulated with alkali metal 400 is placed in the placement cavity 10, the sealing blind plate is closed, and then subsequent operations are performed.

[0058] In this embodiment, a vacuum manipulator 4 and a gas chamber sealing plate placement platform 5 are also provided inside the vacuum chamber 1. The vacuum manipulator 4 is used to transfer the gas chamber component 100 and the gas chamber sealing plate 200. Before starting the preparation of the atomic gas chamber, open the door of the vacuum chamber 1, place the clean gas chamber sealing plate 200 on the gas chamber sealing plate placement stage 5, and place the clean gas chamber component 100 on the vacuum manipulator 4. Then close the door of the vacuum chamber 1 and start the vacuum pumping device to evacuate the vacuum chamber 1. Start the vacuum manipulator 4 and move the gas chamber component 100 to the alignment vacuum probe row 34 according to the first preset program. After injecting the liquefied alkali metal 400 into the gas chamber component 100 through the alkali metal 400 injection device 3, start the vacuum manipulator 4 again and move the gas chamber component 100 containing alkali metal 400 into the wafer bonding machine 2 according to the second preset program. Then move the gas chamber sealing plate 200 on the gas chamber sealing plate placement stage 5 to the top of the gas chamber component 100 according to the third preset program. Finally, bond and seal the gas chamber component 100 and the gas chamber sealing plate 200 through the wafer bonding machine 2. By employing a vacuum manipulator 4, the preparation efficiency can be effectively improved, and the preparation process can be carried out in a full vacuum environment, thereby increasing the yield of the final atomic gas chamber.

[0059] Preferably, the alkali metal 400 injection device 3 further includes a gas cylinder, and the injection valve body 31 also has an inflation port 50 communicating with the placement chamber 10. The gas cylinder is connected to the inflation port 50 for filling with pressurized gas. Preferably, the gas cylinder has a control valve, or the gas cylinder is connected to the inflation port 50 via an inflation pipe, which is equipped with a control valve. The gas cylinder contains high-purity gas, i.e., pressurized gas. After the alkali metal 400 is liquefied, the control valve is opened, and the high-purity gas in the gas cylinder rushes into the placement chamber 10. Then, the liquid alkali metal 400 is rushed into the vacuum probe array 34 and injected into the receiving tank, achieving automatic liquid injection. The high-purity gas can be nitrogen, argon, or helium, with a purity of 99.999% and a pressure of 50–300 Tor, such as 50 Tor, 100 Tor, 150 Tor, 200 Tor, 250 Tor, or 300 Tor.

[0060] Furthermore, the vacuum chamber 1 is provided with a mounting hole 40. The vacuum probe array 34 is connected to the inner end of the mounting hole 40, and the injection port 30 is connected to the outer end of the mounting hole 40. A valve is provided at the mounting hole 40 to control the opening and closing of the mounting hole 40. After the alkali metal 400 is liquefied, the valve is opened, so that the mounting hole 40 is opened, that is, the injection port 30 and the vacuum probe array 34 are connected. The liquefied alkali metal 400 flows from the injection port 30 into the vacuum probe array 34 and is injected into each receiving tank by the vacuum probe array 34. After the injection is completed, the valve is closed, so that the mounting hole 40 is closed, that is, the connection between the injection port 30 and the vacuum probe array 34 is disconnected, ensuring the vacuum environment inside the vacuum chamber 1.

[0061] Preferably, the valve is a blind valve, and the injection valve body 31 is connected to the mounting hole 40 of the vacuum chamber 1 through the blind valve. By operating the opening and closing of the blind valve, the connection and disconnection between the injection port 30 and the mounting hole 40 can be realized.

[0062] Specifically, the vacuum probe array 34 includes a connector plate 341 and a plurality of vacuum probes 342 arranged in an array on the connector plate 341. The plurality of vacuum probes 342 can be inserted one by one into a plurality of receiving slots. The connector plate 341 has an inner cavity and an interface communicating with the inner cavity. The interface is sealed and connected to the mounting hole 40, and the plurality of vacuum probes 342 communicate with the inner cavity. Exemplarily, the interface is sealed to the inner wall of the vacuum chamber 1 by bolts and faces the mounting hole 40. A sealing gasket is preferably provided at the connection between the connector plate 341 and the inner wall of the vacuum chamber 1. By mounting the plurality of vacuum probes 342 through the connector plate 341 and connecting them to the mounting hole 40, and by allowing the liquefied alkali metal 400 to enter the inner cavity and then flow into each vacuum probe 342, the uniformity of the injection amount of liquid alkali metal 400 into each vacuum probe 342 is ensured, thereby improving the quality of the final atomic gas chamber. It should be noted that the number of vacuum probes 342 is equal to the number of receiving slots in the gas chamber component 100 to be injected with alkali metal 400, and their distribution is also consistent to ensure that each vacuum probe 342 can be inserted into a corresponding receiving slot. In this embodiment, multiple vacuum probe rows 34 are provided, each with different specifications, to match different specifications of gas chamber components 100 to be injected with alkali metal 400. Preferably, the connector plate 341 is detachably connected to the inner wall of the vacuum chamber 1, for example, by bolts, to replace vacuum probe rows 34 of different specifications.

[0063] The cross-sectional area of ​​each vacuum probe 342 is one-third or one-half of the cross-sectional area of ​​each receiving groove, ensuring that each vacuum probe 342 can be smoothly inserted into the receiving groove, while ensuring the injection rate of alkali metal 400.

[0064] Furthermore, the alkali metal 400 injection device 3 also includes a drive source and a bellows 35. The bellows 35 is disposed within the placement cavity 10, with one end of the bellows 35 sealed to the inner wall of the placement cavity 10. A vacuum impact pin 33 is sleeved within the bellows 35 and partially extends out of the other end of the bellows 35 in a sealed manner. The drive source can drive the vacuum impact pin 33 to move. The injection valve body 31 has a movable hole. One end of the vacuum impact pin 33 extends from the bellows 35, and the other end movably passes through the movable hole and extends outside the injection valve body 31 to connect to the output end of the drive source. Preferably, the vacuum impact pin 33 is sealed through the movable hole; for example, a sealing ring is embedded in the movable hole, and the vacuum impact pin 33 is sealed through the sealing ring. The bellows 35 isolates the vacuum environment of the placement cavity 10, allowing the vacuum striker 33 to move smoothly under the action of the drive source. When the vacuum striker 33 moves, the bellows 35 expands and contracts accordingly, resulting in better smoothness of movement of the vacuum striker 33 and better sealing between the bellows 35 and the vacuum striker 33.

[0065] For example, the driving source is a driving cylinder, which is located outside the injection valve body 31. The driving cylinder drives the vacuum striker 33 to reciprocate in one direction. Preferably, the vacuum striker 33 is driven to reciprocate along its own axis, and the axis of the vacuum striker 33 is preferably coincident with the axis of the bellows 35.

[0066] The structure of the injection valve body 31 is described below with reference to a specific example:

[0067] The injection valve body 31 includes two cross-shaped interconnected pipes. One pipe has a vacuum port 20 at one end and an injection port 30 at the other end. The other pipe has an air inlet 50 at one end and a movable hole at the other end. It also has a storage port. A baffle plate 36 is installed inside the pipes. Heating wires are wound around both pipes. The above structure is simple and has a neat and aesthetically pleasing appearance.

[0068] Of course, in other embodiments, the structure of the injection valve body 31 may also be different and is not limited to the example structure described above.

[0069] After the alkali metal 400 is injected into the receiving tank of the gas chamber component 100, the gas chamber component 100 is transferred to the wafer bonding machine 2 by the vacuum robot 4, and then the gas chamber sealing plate 200 is transferred onto the gas chamber component 100. Specifically, the wafer bonding machine 2 includes a processing table 21, a pressure and temperature control plate 22, and a high-voltage discharge needle 23. A vacuum robot 4 transfers the gas chamber component 100 to the processing table 21 and fixes it. Preferably, the processing table 21 is equipped with a limiting device, which is used to clamp or release the gas chamber component 100 to ensure the positional stability of the gas chamber component 100. The pressure and temperature control plate 22 is moved along the height direction and is positioned above the processing table 21 so that it can be pressed against or away from the gas chamber sealing plate 200. The pressure and temperature control plate 22 is used to provide pressure and the temperature required for bonding. The high-voltage discharge needle 23 is positioned on one side of the processing table 21 and aligned with the bonding surfaces of the gas chamber component 100 and the gas chamber sealing plate 200 to apply the voltage and weak current required for bonding.

[0070] The limiting device includes, for example, at least two clamping members spaced apart on the processing table 21. Each clamping member includes a drive cylinder and a limiting plate connected to the output end of the drive cylinder. The drive cylinder drives the limiting plate to move radially along the air chamber member 100, thereby clamping or releasing the air chamber member 100 by the at least two limiting plates. Preferably, the limiting plate is arc-shaped to improve the limiting ability of the air chamber member 100. A protective flexible pad is provided on the side of the limiting plate that contacts the air chamber member 100 to avoid damage to the air chamber member 100.

[0071] Specifically, the bonding machine also includes a drive unit that drives the pressure and temperature control plate 22 to move along the height direction. The drive unit can be, but is not limited to, a cylinder. The pressure and temperature control plate 22 includes a plate body, in which a bonding heating wire is disposed. The bonding heating wire is externally powered, and the power supply provides power to the bonding heating wire, causing it to heat up. The drive unit drives the pressure and temperature control plate 22 to move, causing the pressure and temperature control plate 22 to approach the gas chamber sealing plate 200 and finally press it onto the gas chamber sealing plate 200 with a preset pressure. At the same time, the bonding heating wire heats up to the preset bonding temperature, and the gas chamber sealing plate 200 and the gas chamber are bonded together under the pressure, temperature, current, and voltage conditions required for bonding to form a closed integrated structure. For example, when the air chamber component 100 and the air chamber sealing plate 200 are bonded, the driving device drives the pressure temperature control plate 22 to apply pressure to the air chamber sealing plate 200 of 5kN to 10kN, for example, 5kN, 7kN, 9kN or 10kN, etc. The pressure temperature control plate 22 heats to 350 to 450°C, for example, 350°C, 380°C, 400°C, 420°C or 450°C, etc. The voltage generated by the high-voltage discharge needle 23 is 400 to 1000V, for example, 400V, 500V, 600V, 700V, 800V, 900V or 1000V, etc., and the current is 0.5 to 5mA, for example, 0.5mA, 1mA, 2mA, 3mA, 4mA or 5mA, etc.

[0072] like Figures 1 to 6 As shown, this embodiment also provides a method for preparing an atomic gas chamber. This method is based on the atomic gas chamber preparation equipment described above. Specifically, the method includes the following steps:

[0073] S1: Place the glass bulb 300 containing alkali metal 400 into the placement cavity 10. At this time, the injection port 30 and the vacuum probe 342 are not in communication.

[0074] It should be noted that the preparation method of the glass bulb 300 containing alkali metal 400 can be achieved using existing mature technology, and will not be elaborated here.

[0075] When starting to prepare the atomic gas chamber, after confirming that the blind valve is in the closed state, open the sealing blind plate, put the glass bulb 300 into the placement chamber 10, and then close the sealing blind plate to ensure that the placement chamber 10 remains a closed space.

[0076] S2: Turn on the vacuum pump to evacuate the placement chamber 10 to the first preset vacuum level, and adjust the vacuum level in the vacuum chamber 1 to the second preset vacuum level;

[0077] Before starting the vacuuming process, a clean air chamber sealing plate 200 is placed on the air chamber sealing plate placement platform 5, and a clean air chamber component 100 is placed on the vacuum robot 4.

[0078] For example, the first preset vacuum degree is 1E-2Pa to 1E-3Pa, and the second preset vacuum degree is 1E-3Pa to 1E-4Pa. The first preset vacuum degree and the second preset vacuum degree can be the same.

[0079] S3: Align the receiving groove of the gas chamber component 100 with the vacuum probe row 34;

[0080] Specifically, the vacuum manipulator 4 moves the gas chamber component 100 so that each vacuum probe 342 is inserted into a receiving slot.

[0081] It should be noted that before starting the preparation of the atomic gas cell, the vacuum probe array 34 of the corresponding specifications should be assembled according to the specifications of the atomic gas cell to be prepared. For details, please refer to the description in the atomic gas cell preparation equipment above.

[0082] It should be noted that steps S3 and S2 are not in any particular order.

[0083] S4: Move the vacuum striker 33 until it breaks the glass bulb 300, turn on the heating element 32, and liquefy the alkali metal 400;

[0084] Turn on the drive source, which drives the vacuum striker 33 to move until it breaks the glass bulb 300, and the alkali metal 400 is placed directly in the placement cavity 10; the alkali metal 400 is liquefied by heating with the heating element 32, making it easier to inject into the receiving tank later.

[0085] The heating element 32 has a heating temperature of 30 to 50°C, for example, a heating temperature of 30°C, 40°C, or 50°C.

[0086] S5: Connect the injection port 30 to the vacuum probe 342, and inject the liquefied alkali metal 400 into the receiving tank through the vacuum probe 34.

[0087] Specifically, the blind valve is opened, which can be electrically or manually controlled, so that the injection port 30 is connected to the vacuum probe row 34, allowing the liquid alkali metal 400 to flow into the vacuum probe row 34 through the injection port 30.

[0088] Preferably, after connecting the injection port 30 to the vacuum probe 342, the control valve on the gas cylinder or filling tube is opened, and the pressurized gas in the gas cylinder enters the placement chamber 10, delivering the liquefied alkali metal 400 to the vacuum probe 342. By filling the gas cylinder with pressurized gas, the alkali metal 400 can be smoothly injected into the vacuum probe array 34, completing the automatic injection of liquid alkali metal 400, improving the smoothness and reliability of the atomic gas chamber preparation process, and helping to improve the preparation efficiency.

[0089] S6: Place the gas chamber component 100 containing alkali metal 400 and the gas chamber sealing plate 200 into the wafer bonding machine 2;

[0090] The vacuum robot 4 first places the gas chamber component 100 onto the processing table 21 of the wafer bonding machine 2, and then places the gas chamber sealing plate 200 onto the gas chamber component 100. The alignment accuracy is high, which is beneficial to improving the bonding yield.

[0091] Preferably, before transferring the gas chamber component 100, a preset amount of buffer gas is first injected into the vacuum chamber 1, and then the vacuum robot 4 is activated to move the gas chamber component 100 into the wafer bonding machine 2. The function of the buffer gas is to adjust the gas ratio and composition in the atomic gas chamber after bonding, thereby improving the performance of the atomic gas chamber after bonding. For example, nitrogen or argon is selected as the buffer gas, and the filling amount is in the range of 50 Torr to 300 Torr.

[0092] S7: Turn on wafer bonding machine 2. Wafer bonding machine 2 bonds gas chamber component 100 and gas chamber sealing plate 200 to form atomic gas chamber.

[0093] The specific structure and working principle of wafer bonding machine 2 are described in the above description of atomic gas chamber preparation equipment, and will not be repeated here.

[0094] This embodiment also provides an atomic gas chamber, which is prepared by the above-described atomic gas chamber preparation method. The prepared atomic gas chamber has better quality and lower leakage rate.

[0095] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention, the scope of which is determined by the scope of the appended claims.

Claims

1. An atomic cell preparation apparatus for preparing an atomic cell including a cell sealing plate and a cell member having a plurality of spaced apart receiving grooves on one side thereof, the cell sealing plate being closed on the side of the cell member having the receiving grooves, characterized in that, The atomic gas chamber preparation device comprises a vacuum box, a wafer bonding machine and an alkali metal injection device, the vacuum degree of the vacuum box is adjustable, and the alkali metal injection device comprises a vacuum pump, an injection valve body, a heating element, a vacuum striker and a vacuum probe array; The injection valve body is arranged outside the vacuum box, the injection valve body has a placing cavity therein for placing a glass bulb containing alkali metal, the injection valve body has a vacuumizing port and an injection port which are in communication with the placing cavity, and the vacuum pump is in communication with the vacuumizing port; The vacuum probe array is arranged in the vacuum box and is in communication with or not in communication with the injection port; The vacuum striker is movably arranged in the placing cavity and is used for breaking the glass bulb; The heating element is attached to the outside of the injection valve body and is used for generating heat to liquefy the alkali metal, when the vacuum probe is in communication with the injection port, the liquefied alkali metal is injected into each of the accommodation grooves through the injection port and the vacuum probe array; The wafer bonding machine is arranged in the vacuum box and is used for bonding the gas chamber sealing plate and the gas chamber component.

2. The atomic gas cell production apparatus according to claim 1, wherein The vacuum box is provided with a mounting hole, the vacuum probe array is in communication with the inner end of the mounting hole, the injection port is in communication with the outer end of the mounting hole, a valve is arranged at the mounting hole, and the valve is used for controlling the opening and closing of the mounting hole.

3. The atomic gas cell production apparatus according to claim 2, wherein The vacuum probe array comprises a connector disc and a plurality of vacuum probes which are arranged in an array on the connector disc, the plurality of vacuum probes can be inserted into the plurality of accommodation grooves one by one, the connector disc has an inner cavity and an interface which is in communication with the inner cavity, the interface is in sealed communication with the mounting hole, and the plurality of vacuum probes are in communication with the inner cavity.

4. The atomic gas cell production apparatus according to claim 1, wherein The alkali metal injection device further comprises a driving source and a bellows, the bellows is arranged in the placing cavity, one end of the bellows is sealingly connected to the inner wall of the placing cavity, the vacuum striker is sleeved in the bellows and partially sealingly extends out of the other end of the bellows, and the driving source can drive the vacuum striker to move.

5. The atomic gas cell production apparatus of claim 1, wherein, The alkali metal injection device further comprises a sealing blind plate, the injection valve body further has a placing port which is in communication with the placing cavity, the sealing blind plate is detachably sealingly connected to the placing port, and the glass bulb can enter the placing cavity from the placing port.

6. The atomic gas cell production apparatus of claim 1, wherein, The alkali metal injection device further comprises a gas cylinder, the injection valve body further has a gas filling port which is in communication with the placing cavity, and the gas cylinder is in communication with the gas filling port and is used for filling pressurized gas.

7. The atomic gas cell production apparatus of claim 1, wherein Further comprising a vacuum manipulator and a gas chamber sealing plate placing table which are arranged in the vacuum box, the gas chamber sealing plate is placed on the gas chamber sealing plate placing table, the vacuum manipulator is used for moving the gas chamber component to be aligned with the vacuum probe and placed in the wafer bonding machine and is also used for moving the gas chamber sealing plate to be placed on the gas chamber component.

8. A method for producing an atomic gas cell based on the atomic gas cell production apparatus according to any one of claims 1 to 7, characterized by, The atomic gas chamber preparation method comprises: placing a glass bulb containing alkali metal in the placing cavity, at this time, the injection port is not in communication with the vacuum probe; starting the vacuum pump, vacuumizing the placing cavity to a first preset vacuum degree, and adjusting the vacuum degree in the vacuum box to a second preset vacuum degree; aligning a receiving groove of the gas cell member to the vacuum probe array; moving the vacuum probe to break the glass bulb, turning on the heating element to liquefy the alkali metal; communicating the injection port to the vacuum probe, and injecting the liquefied alkali metal into the receiving groove through the vacuum probe array; placing the gas cell member containing the alkali metal and the gas cell cover plate into the wafer bonder; turning on the wafer bonder to bond the gas cell member and the gas cell cover plate, forming the atomic gas cell.

9. The method of claim 8, wherein the atom gas cell is prepared by, The atomic gas cell preparation apparatus further comprises a gas cylinder, the injection valve body further comprises a gas filling port communicated with the placement cavity, and the gas cylinder is communicated with the gas filling port. After the injection port is communicated with the vacuum probe, the atomic gas cell preparation method further comprises: turning on the control valve of the gas cylinder, and the pressurized gas in the gas cylinder enters the placement cavity and sends the liquefied alkali metal to the vacuum probe.

10. An atomic gas cell characterized in that, The atomic gas cell is prepared by the method of any one of claims 8 or 9. The atomic gas cell is prepared by the method of any one of claims 8 or 9.

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