Piezoelectric electrode assembly, processing method and MEMS electric field sensor

Abstract

The invention provides a piezoelectric electrode assembly, a processing method and an MEMS electric field sensor, the piezoelectric electrode assembly comprises a base layer, a bottom end insulating layer, an upper metal electrode, a piezoelectric material layer and a lower metal electrode, the upper metal electrode, the piezoelectric material layer, the lower metal electrode and the bottom end insulating layer are stacked on the base layer in sequence, and the piezoelectric electrode assembly further comprises a shielding electrode, wherein the shielding electrode is located in an area above the piezoelectric material layer and at least shields the top end face of the upper metal electrode. According to the invention, the shielding electrode is additionally arranged, so that the piezoelectric driving signal can be effectively shielded, the tested electric field can be prevented from being interfered by the piezoelectric driving signal, and the frequency of the piezoelectric driving signal can be prevented from being interfered due to the fact that the frequency of the piezoelectric driving signal is the same as that of the induction signal of the electric field sensor.

Description

Technical Field

[0001] The present invention relates to the field of MEMS electric field sensors, and in particular to a piezoelectric electrode assembly, a processing method and a MEMS electric field sensor. Background Art

[0002] As a key component for measuring electric field strength, MEMS electric field sensors are widely used in many fields such as aerospace, smart grid, electrostatic protection, lightning warning, scientific research, etc.

[0003] In recent years, with the development of MEMS and micro-nano processing technology, MEMS electric field sensors based on the charge induction principle have become a hot topic of research and application due to their advantages such as small size, low cost, easy integration, and batch manufacturing. Existing MEMS electric field sensors work based on resonance or vibration, mostly driven by electrostatic or piezoelectric drive. Through a periodic vibration structure, the induced charge on the sensing electrode placed in the measured electric field environment is modulated to generate an induced current proportional to the electric field size to detect the measured electric field. Existing MEMS electric field sensors have electrostatic drive mode, piezoelectric drive mode, etc. Among them, the electrostatic drive mode has the problems of small driving force and high driving voltage, while the piezoelectric drive mode can effectively solve the above problems.

[0004] Figure 1 It is a piezoelectric electrode assembly in an existing MEMS electric field sensor, including a base layer 1, a bottom insulating layer 2, a lower metal electrode 3, a piezoelectric material layer 4, an upper metal electrode 5 and a transmission line 6, wherein the lower metal electrode 3, the piezoelectric material layer 4, the upper metal electrode 5 and the bottom insulating layer 2 are sequentially superimposed on the top end surface of the base layer 1. Through the above structure, the polarization of the piezoelectric material can be realized, causing it to displace, driving the sensing structure to vibrate in space, thereby sensing the size of the electric field.

[0005] However, the above-mentioned piezoelectric electrode assembly has the following defects:

[0006] 1. Since part of the upper metal electrode is exposed to the electric field, the measured electric field is easily disturbed by the piezoelectric drive signal;

[0007] 2. The piezoelectric driving signal is an AC signal, and its frequency is the same as the induction signal frequency of the electric field sensor, which causes strong interference. Summary of the invention

[0008] In view of the shortcomings existing in the above problems, the present invention provides a piezoelectric electrode assembly, a processing method and a MEMS electric field sensor which can not only prevent the measured electric field from being interfered by the piezoelectric driving signal, but also prevent the frequency of the piezoelectric driving signal from interfering with the induced signal frequency of the electric field sensor due to being the same as the frequency of the induced signal of the electric field sensor.

[0009] To achieve the above-mentioned object, in a first aspect, the present invention provides a piezoelectric electrode assembly, comprising a base layer, a bottom insulating layer, an upper metal electrode, a piezoelectric material layer and a lower metal electrode, wherein the upper metal electrode, the piezoelectric material layer, the lower metal electrode and the bottom insulating layer are sequentially superimposed on the base layer, and further comprising a shielding electrode, wherein:

[0010] The shielding electrode is located in the upper region of the upper metal electrode and at least shields the top end surface of the upper metal electrode.

[0011] In one embodiment, it further comprises a top insulating layer, wherein:

[0012] The top insulating layer is wrapped around the outer sides of the upper metal electrode and the piezoelectric material layer to form a packaging structure with the lower metal electrode, or the top insulating layer is wrapped around the outer sides of the upper metal electrode, the piezoelectric material layer and the lower metal electrode to form a packaging structure with the bottom insulating layer.

[0013] In one embodiment, the shielding electrode is located outside the top insulating layer and covers a portion of the top end surface of the top insulating layer, or the shielding electrode wraps the top end surface and at least a portion of the outer peripheral wall of the top insulating layer.

[0014] In a second aspect, the present invention provides a piezoelectric electrode assembly, comprising a base layer, a bottom insulating layer, at least one first upper metal electrode, at least one first piezoelectric material layer, at least one first lower metal electrode, at least one second upper metal electrode, at least one second piezoelectric material layer and at least one second lower metal electrode, wherein the first upper metal electrode, the first piezoelectric material layer and the first lower metal electrode are sequentially stacked, the second upper metal electrode, the second piezoelectric material layer and the second lower metal electrode are sequentially stacked, and further comprising at least one first shielding electrode and at least one second shielding electrode, wherein:

[0015] The first shielding electrode is located in the upper region of the first upper metal electrode and at least shields the top end surface of the first upper metal electrode;

[0016] The second shielding electrode is located in an area above the second upper metal electrode and at least shields a top end surface of the second upper metal electrode.

[0017] In one embodiment, the invention further comprises at least one first top insulating layer and at least one second top insulating layer, wherein:

[0018] The first top insulating layer is wrapped around the outside of the first upper metal electrode and the first piezoelectric material layer, and forms a first packaging structure with the first lower metal electrode, or the first top insulating layer is wrapped around the outside of the first upper metal electrode, the first piezoelectric material layer and the first lower metal electrode, and forms a first packaging structure with the bottom insulating layer;

[0019] The second top insulating layer is wrapped around the outside of the second upper metal electrode and the second piezoelectric material layer, and forms a second packaging structure with the second lower metal electrode, or the second top insulating layer is wrapped around the outside of the second upper metal electrode, the second piezoelectric material layer and the second lower metal electrode, and forms a second packaging structure with the bottom insulating layer.

[0020] In one embodiment, the first shielding electrode is located outside the first top insulating layer and covers a portion of the top end surface of the first top insulating layer, or the first shielding electrode wraps the top end surface and at least a portion of the peripheral wall surface of the first top insulating layer;

[0021] The second shielding electrode is located on the outside of the second top insulating layer, covering a portion of the top end surface of the second top insulating layer, or the second shielding electrode wraps a portion of the top end surface and the outer peripheral wall surface of the second top insulating layer. In a third aspect, the present invention provides a piezoelectric electrode assembly, including a base layer, a bottom insulating layer, a lower metal electrode, at least one first upper metal electrode, at least one first piezoelectric material layer, at least one second upper metal electrode and at least one second piezoelectric material layer, the first upper metal electrode is superimposed on the first piezoelectric material layer, the second upper metal electrode is superimposed on the second piezoelectric material layer, the first piezoelectric material layer and the second piezoelectric material layer are respectively superimposed on the lower metal electrode, and also includes at least one first shielding electrode and at least one second shielding electrode, wherein:

[0022] The first shielding electrode is located in the upper region of the first upper metal electrode and at least shields the top end surface of the first upper metal electrode;

[0023] The second shielding electrode is located in an area above the second upper metal electrode and at least shields a top end surface of the second upper metal electrode.

[0024] In one embodiment, the invention further comprises at least a first top insulating layer and at least a second top insulating layer, wherein:

[0025] The first top insulating layer is wrapped around the outer sides of the first upper metal electrode and the first piezoelectric material layer, and forms a first packaging structure with the lower metal electrode;

[0026] The second top insulating layer is wrapped around the outer sides of the second upper metal electrode and the second piezoelectric material layer, and forms a second packaging structure with the lower metal electrode.

[0027] In one embodiment, the first shielding electrode is located outside the first top insulating layer and covers a portion of the top end surface of the first top insulating layer, or the first shielding electrode wraps the top end surface and at least a portion of the peripheral wall surface of the first top insulating layer;

[0028] The second shielding electrode is located outside the second top insulating layer and covers a portion of the top end surface of the second top insulating layer, or the second shielding electrode wraps the top end surface and at least a portion of the outer peripheral wall surface of the second top insulating layer.

[0029] In one embodiment, it further comprises a top insulating layer, wherein:

[0030] The top insulating layer includes the first upper metal electrode, the first piezoelectric material layer, at least a portion of the lower metal electrode, the second upper metal electrode and the second piezoelectric material layer.

[0031] In one embodiment, the first shielding electrode is located in an area above the first upper metal electrode and covers a portion of the top insulating layer;

[0032] The second shielding electrode is located in an area above the second upper metal electrode and covers a portion of the top insulating layer.

[0033] In a fourth aspect, the present invention provides a processing method for processing the above-mentioned piezoelectric electrode assembly, comprising the following steps:

[0034] S1, using a double-sided polished SOI wafer as a base layer;

[0035] S2, thermally oxidizing the wafer so that a bottom insulating layer is formed on the upper surface of the wafer;

[0036] S3, metal deposition, so that the lower metal electrode, the piezoelectric material layer and the upper metal electrode are sequentially superimposed on the bottom insulating layer;

[0037] S4, etching the upper metal electrode so that the upper metal electrode covers at least a portion of the top end surface of the piezoelectric material layer;

[0038] S5, etching the piezoelectric material layer so that the piezoelectric material layer at least covers a portion of the top end surface of the lower metal electrode;

[0039] S6, etching the lower metal electrode so that the lower metal electrode at least covers a portion of the top end surface of the bottom insulating layer;

[0040] S7, depositing a top insulating layer so that the top insulating layer at least covers the lower metal electrode, the piezoelectric material layer and the upper metal electrode;

[0041] S8, etching the top insulating layer so that the top insulating layer at least covers the metal electrode and the piezoelectric material layer;

[0042] S9. Depositing and etching a shielding electrode so that the shielding electrode covers at least a portion of the top end surface of the top insulating layer.

[0043] In a fifth aspect, the present invention provides a MEMS electric field sensor, comprising the above-mentioned piezoelectric electrode assembly.

[0044] Compared with the prior art, the present invention has one of the following advantages:

[0045] By adding a shielding electrode, not only can the piezoelectric drive signal be effectively shielded to prevent the measured electric field from being interfered by the piezoelectric drive signal, but also the frequency of the piezoelectric drive signal can be prevented from interfering with the induction signal frequency of the electric field sensor.

[0046] By adding a top insulating layer, the top insulating layer and the lower metal electrode or the bottom insulating layer together form a packaging structure of the piezoelectric material layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 is a cross-sectional view of a conventional piezoelectric electrode;

[0048] Figure 2 is a cross-sectional view of a first embodiment of a piezoelectric electrode assembly in the present invention;

[0049] Figure 3 is a cross-sectional view of a second embodiment of a piezoelectric electrode assembly in the present invention;

[0050] Figure 4 is a cross-sectional view of a third embodiment of a piezoelectric electrode assembly in the present invention;

[0051] Figure 5 is a cross-sectional view of a fourth embodiment of a piezoelectric electrode assembly according to the present invention;

[0052] Figure 6 is a cross-sectional view of a fifth embodiment of a piezoelectric electrode assembly according to the present invention;

[0053] Figure 7 is a cross-sectional view of a sixth embodiment of a piezoelectric electrode assembly according to the present invention;

[0054] Figure 8 is a cross-sectional view of a seventh embodiment of a piezoelectric electrode assembly according to the present invention;

[0055] Fig. 9is a cross-sectional view of an eighth embodiment of a piezoelectric electrode assembly according to the present invention;

[0056] Fig.10 is a cross-sectional view of a ninth embodiment of a piezoelectric electrode assembly according to the present invention;

[0057] Fig.11 Schematic diagram of the MEMS electric field sensor in the present invention.

[0058] The main reference numerals are as follows:

[0059] 1-base layer; 2-bottom insulating layer; 3-lower metal electrode; 4-piezoelectric material layer; 5-upper metal electrode;

[0060] 6-transmission line; 7-top insulating layer; 8-shielding electrode; 9-first lower metal electrode; 10-first piezoelectric material layer; 11-first upper metal electrode; 12-first top insulating layer; 13-first shielding electrode; 14-second lower metal electrode; 15-second piezoelectric material layer; 16-second upper metal electrode; 17-second top insulating layer; 18-second shielding electrode; 19-first bottom insulating layer; 20-second bottom insulating layer; 21-MEMS electric field sensor; 22-substrate; 221-substrate Body region; 222-charge induction region; 23-dynamic induction electrode; 231-first induction electrode; 232-first piezoelectric electrode a; 233-second piezoelectric electrode a; 234-first extraction electrode; 235-first extension electrode a; 236-second extension electrode a; 24-static induction electrode; 241-second induction electrode; 242-first piezoelectric electrode b; 243-second piezoelectric electrode b; 244-second extraction electrode; 245-first extension electrode b; 246-second extension electrode b. DETAILED DESCRIPTION

[0061] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0062] In the description of the present invention, it is necessary to understand that the terms "upper", "lower", "top surface", "bottom surface", "inside", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. It should be noted that when a component is considered to be "connected" to another component, it may be directly connected to the other component or there may be a centrally arranged component at the same time. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0063] Embodiment 1

[0064] like Figure 2 As shown, this embodiment provides a piezoelectric electrode assembly, including a base layer 1, a bottom insulating layer 2, a lower metal electrode 3, a piezoelectric material layer 4, an upper metal electrode 5, a top insulating layer 7 and a shielding electrode 8.

[0065] Specifically, the upper metal electrode 5, the piezoelectric material layer 4, the lower metal electrode 3 and the bottom insulating layer 2 are sequentially stacked on the top end surface of the base layer 1, and cover a portion of the top end surface of the base layer 1. The top insulating layer 7 is wrapped around the outside of the upper metal electrode 5 and the piezoelectric material layer 4, and the bottom end surface of the top insulating layer 7 covers a portion of the lower metal electrode 3, and the top insulating layer 7 and a portion of the lower metal electrode 3 form a packaging structure. The shielding electrode 8 is wrapped around the outside of the top insulating layer 7, and the bottom end surface of the shielding electrode 8 covers a portion of the lower metal electrode 3.

[0066] The shielding electrode 8 wraps the top end surface of the top insulating layer 7 and the outer wall surface of the top insulating layer 7 .

[0067] Furthermore, the width of the upper metal electrode 5 is smaller than the width of the piezoelectric material layer 4, the width of the lower metal electrode 3, the width of the bottom insulating layer 2 and the width of the base layer 1 in turn, so that the edge portions on both sides of the upper metal electrode 5, the piezoelectric material layer 4, the lower metal electrode 3, the bottom insulating layer 2 and the base layer 1 form a stepped structure. When the top insulating layer 7 is wrapped around the outside of the upper metal electrode 5 and the piezoelectric material layer 4, and the shielding electrode 8 is covered on the outside of the top insulating layer, the edge portions on both sides of the top insulating layer 7 and the shielding electrode 8 also form a stepped structure.

[0068] Furthermore, since the width of the piezoelectric material layer 4 is smaller than the width of the lower metal electrode 3, the top end surface of the lower metal electrode 3 forms a covered area covered by the piezoelectric material layer 4 and a non-covered area covered by the piezoelectric material layer 4. When the top insulating layer 7 is wrapped around the outer side of the upper metal electrode 5 and the piezoelectric material layer 4, the bottom end surface of the top insulating layer 7 contacts a part of the non-covered area and covers the part.

[0069] In this embodiment, the top insulating layer 7 and a portion of the lower metal electrode 3 form a packaging structure, and the shielding electrode 8 can shield the top and the peripheral wall of the upper metal electrode 5 .

[0070] Embodiment 2

[0071] like Figure 3 As shown, this embodiment provides a piezoelectric electrode assembly. The difference between this embodiment and the first embodiment is that:

[0072] The top insulating layer 7 is wrapped around the outer sides of the upper metal electrode 5, the piezoelectric material layer 4 and the lower metal electrode 3, and the bottom end surface of the top insulating layer 7 covers a part of the bottom insulating layer 2. The shielding electrode 8 is located on the top end surface of the top insulating layer 7, covers a part of the top end surface of the top insulating layer 7, and is located above the piezoelectric material layer 4.

[0073] In this embodiment, the top insulating layer 7 and a portion of the bottom insulating layer 2 form a packaging structure, and the shielding electrode 8 can have a shielding effect on the top of the upper metal electrode 5 .

[0074] Embodiment 3

[0075] like Figure 4 As shown, this embodiment provides a piezoelectric electrode assembly, including a base layer 1, a first bottom insulating layer 19, a second bottom insulating layer 20, a first upper metal electrode 11, a first piezoelectric material layer 10, a first lower metal electrode 9, a second upper metal electrode 16, a second piezoelectric material layer 15, a second lower metal electrode 14, a first top insulating layer 12, a second top insulating layer 17, a first shielding electrode 13 and a second shielding electrode 18.

[0076] Specifically, the first upper metal electrode 11, the first piezoelectric material layer 10, the first lower metal electrode 9 and the first bottom insulating layer 19 are sequentially stacked on the top end surface of the base layer 1 from top to bottom, and cover a portion of the top end surface of the base layer 1. The first top insulating layer 12 is wrapped around the outside of the first upper metal electrode 11, the first piezoelectric material layer 10 and the first lower metal electrode 9, and the bottom end surface of the first top insulating layer 12 covers a portion of the first bottom insulating layer 19. The first top insulating layer 12 and the first bottom insulating layer 19 form a first packaging structure of the first upper metal electrode 11, the first piezoelectric material layer 10 and the first lower metal electrode 9. The first shielding electrode 13 is located on the top end surface of the first top insulating layer 12, covers a portion of the top end surface of the first top insulating layer 12, and is located above the first piezoelectric material layer 10.

[0077] The second upper metal electrode 16, the second piezoelectric material layer 15, the second lower metal electrode 14 and the second bottom insulating layer 20 are sequentially stacked on the top end surface of the base layer 1 from top to bottom, and cover a portion of the top end surface of the base layer 1. The second top insulating layer 17 is wrapped around the outside of the second upper metal electrode 16, the second piezoelectric material layer 15 and the second lower metal electrode 14, and the bottom end surface of the second top insulating layer 17 covers a portion of the second bottom insulating layer 20. The second top insulating layer 17 and the second bottom insulating layer 20 form a second packaging structure of the second upper metal electrode 16, the second piezoelectric material layer 15 and the second lower metal electrode 14. The second shielding electrode 18 is located on the top end surface of the second top insulating layer 17, covers a portion of the top end surface of the second top insulating layer 17, and is located above the second piezoelectric material layer 15.

[0078] Furthermore, the first upper metal electrode 11, the first piezoelectric material layer 10 and the first lower metal electrode 9 are superimposed to form a first piezoelectric electrode, and the second upper metal electrode 16, the second piezoelectric material layer 15 and the second lower metal electrode 14 are superimposed to form a second piezoelectric electrode. When the first piezoelectric electrode and the second piezoelectric electrode are arranged on the top end surface of the base layer 1 in parallel.

[0079] Furthermore, the width of the first upper metal electrode 11 is smaller than the width of the first piezoelectric material layer 10, the width of the first lower metal electrode 9, the width of the first bottom insulating layer 19 and the width of the base layer 1 in turn, so that the edge portions on both sides of the first upper metal electrode 11, the first piezoelectric material layer 10, the first lower metal electrode 9, the first bottom insulating layer 19 and the base layer 1 form a stepped structure. When the first top insulating layer 12 wraps around the outside of the first upper metal electrode 11, the first piezoelectric material layer 10 and the first lower metal electrode 9, and the first shielding electrode 13 covers the outer side of the top end surface of the top insulating layer, the edge portions on both sides of the first top insulating layer 12 and the first shielding electrode 13 also form a stepped structure.

[0080] The width of the second upper metal electrode 16 is smaller than the width of the second piezoelectric material layer 15, the width of the second lower metal electrode 14, the width of the second bottom insulating layer 20 and the width of the base layer 1 in turn, so that the edge portions on both sides of the second upper metal electrode 16, the second piezoelectric material layer 15, the second lower metal electrode 14, the second bottom insulating layer 20 and the base layer 1 form a stepped structure. When the second top insulating layer 17 is wrapped around the outside of the second upper metal electrode 16, the second piezoelectric material layer 15 and the second lower metal electrode 14, and the second shielding electrode 18 covers the outside of the top end surface of the second top insulating layer 17, the edge portions on both sides of the second top insulating layer 17 and the second shielding electrode 18 also form a stepped structure.

[0081] In this embodiment, the first top insulating layer 12 and the first bottom insulating layer 19 form a first packaging structure, and the first shielding electrode 13 can shield the first upper metal electrode 11. The second top insulating layer 17 and the second bottom insulating layer 20 form a second packaging structure, and the second shielding electrode 18 can shield the top of the second upper metal electrode 16.

[0082] Embodiment 4

[0083] like Figure 5 As shown, this embodiment provides a piezoelectric electrode assembly. The difference between this embodiment and the third embodiment is that:

[0084] The piezoelectric electrode assembly provided in this embodiment includes a base layer 1, a bottom insulating layer 2, a first upper metal electrode 11, a first piezoelectric material layer 10, a first lower metal electrode 9, a first top insulating layer 12, a first shielding electrode 13, a second upper metal electrode 16, a second piezoelectric material layer 15, a second lower metal electrode 14, a second top insulating layer 17 and a second shielding electrode 18.

[0085] The bottom insulating layer 2 covers a portion of the top end surface of the base layer 1, the first lower metal electrode 9 covers a portion of the bottom insulating layer 2, the first top insulating layer 12 wraps around the outside of the first upper metal electrode 11 and the first piezoelectric material layer 10, and the bottom end surface of the first top insulating layer 12 covers a portion of the first lower metal electrode 9, and the first top insulating layer 12 and a portion of the first lower metal electrode 9 form a first packaging structure of the first upper metal electrode 11 and the first piezoelectric material layer 10. The first shielding electrode 13 is located at the top end surface of the first top insulating layer 12, covers a portion of the top end surface of the first top insulating layer 12, and is located above the first piezoelectric material layer 10. The second lower metal electrode 14 covers a portion of the bottom insulating layer 2, the second top insulating layer 17 wraps around the outside of the second upper metal electrode 16 and the second piezoelectric material layer 15, and the bottom end surface of the second top insulating layer 17 covers a portion of the second lower metal electrode 14, and the second top insulating layer 17 and a portion of the second lower metal electrode 14 form a second packaging structure of the second upper metal electrode 16 and the second piezoelectric material layer 15. The second shielding electrode 18 is located on the top end surface of the second top insulating layer 17 , covers a portion of the top end surface of the second top insulating layer 17 , and is located above the second piezoelectric material layer 15 .

[0086] In this embodiment, the first top insulating layer 12 and a portion of the first lower metal electrode 9 form a first packaging structure, and the first shielding electrode 13 can shield the top of the first upper metal electrode 11. The second top insulating layer 17 and a portion of the second lower metal electrode 14 form a second packaging structure, and the second shielding electrode 18 can shield the top of the second upper metal electrode 16.

[0087] Embodiment 5

[0088] like Figure 6 As shown, this embodiment provides a piezoelectric electrode assembly. The difference between this embodiment and the third embodiment is that:

[0089] The piezoelectric electrode assembly provided in this embodiment includes a base layer 1, a bottom insulating layer 2, a lower metal electrode 3, a first upper metal electrode 11, a first piezoelectric material layer 10, a first top insulating layer 12, a first shielding electrode 13, a second upper metal electrode 16, a second piezoelectric material layer 15, a second top insulating layer 17 and a second shielding electrode 18.

[0090] The bottom insulating layer 2 covers a portion of the top end surface of the base layer 1, the lower metal electrode 3 covers a portion of the top end surface of the bottom insulating layer 2, the first piezoelectric material layer 10 covers a portion of the top end surface of the lower metal electrode 3, the first top insulating layer 12 wraps around the outside of the first upper metal electrode 11 and the first piezoelectric material layer 10, and the bottom end surface of the first top insulating layer 12 covers a portion of the lower metal electrode 3. The first shielding electrode 13 is located on the top end surface of the first top insulating layer 12, covering a portion of the top end surface of the first top insulating layer 12, and the first top insulating layer 12 and a portion of the lower metal electrode 3 form a first packaging structure of the first upper metal electrode 11 and the first piezoelectric material layer 10. The first shielding electrode 13 is located above the first piezoelectric material layer 10. The second piezoelectric material layer 15 covers a portion of the top end surface of the lower metal electrode 3, the second top insulating layer 17 is wrapped around the outside of the second upper metal electrode 16 and the second piezoelectric material layer 15, and the bottom end surface of the second top insulating layer 17 covers a portion of the lower metal electrode 3, and the second top insulating layer 17 and a portion of the lower metal electrode 3 form a second packaging structure of the second upper metal electrode 16 and the second piezoelectric material layer 15. The second shielding electrode 18 is located on the top end surface of the second top insulating layer 17, covering a portion of the top end surface of the second top insulating layer 17, and the second shielding electrode 18 is located above the second piezoelectric material layer 15.

[0091] In this embodiment, the first top insulating layer 12 and a portion of the lower metal electrode 3 form a first packaging structure, and the first shielding electrode 13 can shield the top of the first upper metal electrode 11. The second top insulating layer 17 and a portion of the lower metal electrode 3 form a second packaging structure, and the second shielding electrode 18 can shield the top of the second upper metal electrode 16.

[0092] Embodiment 6

[0093] like Figure 7 As shown, this embodiment provides a piezoelectric electrode assembly. The difference between this embodiment and the third embodiment is that:

[0094] The piezoelectric electrode assembly provided in this embodiment includes a base layer 1, a bottom insulating layer 2, a first upper metal electrode 11, a first piezoelectric material layer 10, a first lower metal electrode 9, a first top insulating layer 12, a first shielding electrode 13, a second upper metal electrode 16, a second piezoelectric material layer 15, a second lower metal electrode 14, a second top insulating layer 17 and a second shielding electrode 18.

[0095] Specifically, the bottom insulating layer 2 covers a portion of the top end surface of the base layer 1, and the first upper metal electrode 11, the first piezoelectric material layer 10 and the first lower metal electrode 9 are stacked on the top end surface of the bottom insulating layer 2 in sequence from top to bottom. The first top insulating layer 12 is wrapped around the outside of the first upper metal electrode 11, the first piezoelectric material layer 10 and the first lower metal electrode 9. The bottom end surface of the first top insulating layer 12 covers a portion of the bottom insulating layer 2. The first top insulating layer 12 and a portion of the bottom insulating layer 2 form a first packaging structure of the first upper metal electrode 11, the first piezoelectric material layer 10 and the first lower metal electrode 9. The first shielding electrode 13 is wrapped around the top end surface of the first top insulating layer 12 and a portion of the outer peripheral wall. The second upper metal electrode 16, the second piezoelectric material layer 15 and the second lower metal electrode 14 are sequentially stacked on the top end surface of the bottom insulating layer 2 from top to bottom, the second top insulating layer 17 is wrapped around the outside of the second upper metal electrode 16, the second piezoelectric material layer 15 and the second lower metal electrode 14, the bottom end surface of the second top insulating layer 17 covers a part of the bottom insulating layer 2, and the second top insulating layer 17 and a part of the bottom insulating layer 2 form a second packaging structure of the second upper metal electrode 16, the second piezoelectric material layer 15 and the second lower metal electrode 14. The second shielding electrode 18 is wrapped around the top end surface of the second top insulating layer 17 and a part of the peripheral wall surface.

[0096] In this embodiment, the first top insulating layer 12 and a portion of the bottom insulating layer 2 form a first packaging structure, and the first shielding electrode 13 can shield the top and the peripheral wall of the first upper metal electrode 11. The second top insulating layer 17 and a portion of the bottom insulating layer 2 form a second packaging structure, and the second shielding electrode 18 can shield the top and the peripheral wall of the second upper metal electrode 16.

[0097] Embodiment 7

[0098] like Figure 8 As shown, this embodiment provides a piezoelectric electrode assembly. The difference between this embodiment and the third embodiment is that:

[0099] The piezoelectric electrode assembly provided in this embodiment includes a base layer 1, a bottom insulating layer 2, a first upper metal electrode 11, a first piezoelectric material layer 10, a first lower metal electrode 9, a first top insulating layer 12, a first shielding electrode 13, a second upper metal electrode 16, a second piezoelectric material layer 15, a second lower metal electrode 14, a second top insulating layer 17 and a second shielding electrode 18.

[0100] Specifically, the first top insulating layer 12 is wrapped around the outside of the first upper metal electrode 11 and the first piezoelectric material layer 10, the bottom end surface of the first top insulating layer 12 covers a portion of the first lower metal electrode 9, and the first top insulating layer 12 and a portion of the first lower metal electrode 9 form a first packaging structure of the first upper metal electrode 11 and the first piezoelectric material layer 10. The first shielding electrode 13 is wrapped around the top end surface and the peripheral wall surface of the first top insulating layer 12, and the bottom end surface of the first shielding electrode 13 covers a portion of the first lower metal electrode 9.

[0101] The second top insulating layer 17 is wrapped around the outside of the second upper metal electrode 16 and the second piezoelectric material layer 15, and the bottom end surface of the second top insulating layer 17 covers a portion of the second lower metal electrode 14. The second top insulating layer 17 and a portion of the second lower metal electrode 14 form a second packaging structure with the second upper metal electrode 16 and the second piezoelectric material layer 15. The second shielding electrode 18 is wrapped around the top end surface and the peripheral wall surface of the second top insulating layer 17, and the bottom end surface of the second shielding electrode 18 covers a portion of the second lower metal electrode 14.

[0102] In this embodiment, the first top insulating layer 12 and a portion of the first lower metal electrode 9 form a first packaging structure, and the first shielding electrode 13 can shield the top and the peripheral wall of the first upper metal electrode 11. The second top insulating layer 17 and a portion of the second lower metal electrode 14 form a second packaging structure, and the second shielding electrode 18 can shield the top and the peripheral wall of the second upper metal electrode 16.

[0103] Embodiment 8

[0104] like Fig. 9 As shown, this embodiment provides a piezoelectric electrode assembly. The difference between this embodiment and the third embodiment is that:

[0105] The piezoelectric electrode assembly provided in this embodiment includes a base layer 1, a bottom insulating layer 2, a first upper metal electrode 11, a first piezoelectric material layer 10, a first top insulating layer 12, a first shielding electrode 13, a second upper metal electrode 16, a second piezoelectric material layer 15, a second top insulating layer 17, a second shielding electrode 18 and a lower metal electrode 3.

[0106] Specifically, the lower metal electrode 3 covers a portion of the top end surface of the bottom insulating layer 2, the first upper metal electrode 11 and the first piezoelectric material layer 10 are stacked from top to bottom, and cover a portion of the lower metal electrode 3, the first top insulating layer 12 is wrapped around the outside of the first upper metal electrode 11 and the first piezoelectric material layer 10, the bottom end surface of the first top insulating layer 12 covers a portion of the lower metal electrode 3, and the first top insulating layer 12 and a portion of the lower metal electrode 3 form a first packaging structure of the first upper metal electrode 11 and the first piezoelectric material layer 10. The first shielding electrode 13 is wrapped around the top end surface and the peripheral wall surface of the first top insulating layer 12, and the bottom end surface of the first shielding electrode 13 covers a portion of the lower metal electrode 3.

[0107] After the second upper metal electrode 16 and the second piezoelectric material layer 15 are stacked from top to bottom, they cover a portion of the lower metal electrode 3. The second top insulating layer 17 is wrapped around the outside of the second upper metal electrode 16 and the second piezoelectric material layer 15. The bottom end surface of the second top insulating layer 17 covers a portion of the lower metal electrode 3. The second top insulating layer 17 and a portion of the lower metal electrode 3 form a second packaging structure of the second upper metal electrode 16 and the second piezoelectric material layer 15. The second shielding electrode 18 is wrapped around the top end surface and the peripheral wall surface of the second top insulating layer 17. The bottom end surface of the second shielding electrode 18 covers a portion of the lower metal electrode 3.

[0108] In this embodiment, the first top insulating layer 12 and a portion of the lower metal electrode 3 form a first packaging structure, and the first shielding electrode 13 can shield the top and the peripheral wall of the first upper metal electrode 11. The second top insulating layer 17 and a portion of the lower metal electrode 3 form a second packaging structure, and the second shielding electrode 18 can shield the top and the peripheral wall of the second upper metal electrode 16.

[0109] Embodiment 9

[0110] like Fig.10 As shown, this embodiment provides a piezoelectric electrode assembly. The difference between this embodiment and the third embodiment is that:

[0111] The piezoelectric electrode assembly provided in this embodiment includes a base layer 1, a bottom insulating layer 2, a first upper metal electrode 11, a first piezoelectric material layer 10, a first shielding electrode 13, a second upper metal electrode 16, a second piezoelectric material layer 15, a second shielding electrode 18, a top insulating layer 7 and a lower metal electrode 3.

[0112] Specifically, the lower metal electrode 3, the bottom insulating layer 2 and the base layer 1 are stacked in sequence, wherein the lower metal electrode 3 covers a portion of the top end surface of the bottom insulating layer 2, and the bottom insulating layer 2 covers a portion of the top end surface of the base layer 1. After the first upper metal electrode 11 and the first piezoelectric material layer 10 are stacked from top to bottom, they cover a portion of the lower metal electrode 3, and after the second upper metal electrode 16 and the second piezoelectric material layer 15 are stacked from top to bottom, they cover a portion of the lower metal electrode 3. The top insulating layer 7 is respectively wrapped around the outside of the first upper metal electrode 11, the first piezoelectric material layer 10, the second upper metal electrode 16 and the second piezoelectric material layer 15, and at the same time, the middle part, the first end and the second end of the top insulating layer 7 respectively cover a portion of the top end surface of the lower metal electrode 3, and the top insulating layer 7 and a portion of the lower metal electrode 3 form a packaging structure of the first upper metal electrode 11, the first piezoelectric material layer 10, the second upper metal electrode 16 and the second piezoelectric material layer 15. The first shielding electrode 13 covers a portion of the top end surface of the top insulating layer 7 and is located directly above the first upper metal electrode 11 . The second shielding electrode 18 covers a portion of the top end surface of the top insulating layer 7 and is located directly above the second upper metal electrode 16 .

[0113] In this embodiment, the top insulating layer 7 and a portion of the lower metal electrode 3 form a packaging structure, the first shielding electrode 13 can shield the top of the first upper metal electrode 11, and the second shielding electrode 18 can shield the top of the second upper metal electrode 16.

[0114] In the above-mentioned embodiments 1 to 9, the base layer is made of conductive material (for example, made of silicon material with conductive properties). Therefore, the signal generated by the piezoelectric material layer, the upper metal electrode and / or the lower metal electrode can be output from the base layer, or the external input signal can be input from the base layer to the piezoelectric material layer, the upper metal electrode and / or the lower metal electrode.

[0115] The lower metal electrode can be connected to the signal ground in the external control circuit board to prevent interference to the electric field detection due to the floating potential of the lower metal electrode.

[0116] The piezoelectric material layer is sandwiched between the lower metal electrode and the upper metal electrode. When the external control circuit board applies a potential difference to the upper and lower metal electrodes, the lower metal electrode is grounded, and the upper metal electrode receives the input electrical signal, so that the piezoelectric material layer is displaced between the upper and lower metal electrodes. At the same time, when the piezoelectric material layer is displaced between the upper and lower metal electrodes, a potential difference (i.e., a vibration signal) can be formed between the upper and lower surfaces of the piezoelectric material layer. Since the upper and lower metal electrodes are connected to the external control circuit board, the vibration signal can be input to the external control circuit board, so that the external control circuit board can monitor the vibration signal and obtain a corresponding DC voltage value according to the vibration signal (i.e., a DC current signal).

[0117] The shielding electrode is connected to the signal ground of the external control circuit board. In the three layers of metal electrodes from bottom to top, the signal conditions of the lower metal electrode, the upper metal electrode, and the shielding electrode are ground, signal, and ground, thereby forming a stripline structure.

[0118] In addition, in the above-mentioned embodiments 1 to 9, a transmission line is also laid on the top end surface of the base layer.

[0119] In addition, in the above-mentioned first to ninth embodiments, the materials of the top insulating layer and the bottom insulating layer are not limited to silicon dioxide, silicon nitride, and a composite material made of silicon dioxide and silicon nitride.

[0120] The upper and lower metal electrodes and the shielding electrode can be made of metals such as Ti, Pt, Al, Ag, Cr, Cu, Au, Mo, or alloy materials. The base layer can be made of dielectric materials such as silicon-based materials, glass, ceramics, metals or organic materials, metals and metal alloy materials. The piezoelectric material layer can be made of lead zirconate titanate, aluminum nitride, zinc oxide, lead titanate, barium titanate, and modified lead titanate.

[0121] Embodiment 10

[0122] This embodiment provides a processing method for processing the piezoelectric electrode assembly described in the above-mentioned embodiments 1 to 9, comprising the following steps:

[0123] S1, using a double-sided polished SOI wafer as a base layer;

[0124] S2, thermally oxidizing the wafer so that a bottom insulating layer is formed on the upper surface of the wafer;

[0125] S3, metal deposition, so that the lower metal electrode, the piezoelectric material layer and the upper metal electrode are sequentially superimposed on the bottom insulating layer;

[0126] S4, etching the upper metal electrode so that the upper metal electrode covers at least a portion of the top end surface of the piezoelectric material layer;

[0127] S5, etching the piezoelectric material layer so that the piezoelectric material layer at least covers a portion of the top end surface of the lower metal electrode;

[0128] S6, etching the lower metal electrode so that the lower metal electrode at least covers a portion of the top end surface of the bottom insulating layer;

[0129] S7, depositing a top insulating layer so that the top insulating layer at least covers the lower metal electrode, the piezoelectric material layer and the upper metal electrode;

[0130] S8, etching the top insulating layer so that the top insulating layer at least covers the metal electrode and the piezoelectric material layer;

[0131] S9. Depositing and etching a shielding electrode so that the shielding electrode covers at least a portion of the top end surface of the top insulating layer.

[0132] Furthermore, in step S8, after etching the top insulating layer, the top insulating layer is wrapped around the outer sides of the upper metal electrode and the piezoelectric material layer, or the top insulating layer is wrapped around the outer sides of the upper metal electrode, the piezoelectric material layer and the lower metal electrode.

[0133] Further, in step S9, after the shielding electrode is deposited and etched, the shielding electrode covers a portion of the top end surface of the top insulating layer, or the shielding electrode covers the top end surface and the peripheral wall surface of the top insulating layer.

[0134] In the above processing method, by adding the steps of depositing a top insulating layer, etching the top insulating layer, and depositing and etching a shielding electrode, the top insulating layer is at least wrapped around the outside of the piezoelectric material layer, and the shielding electrode at least covers the top end surface of the top insulating layer and is located above the piezoelectric material layer. This can not only effectively package and protect the upper metal electrode, the piezoelectric material layer, and the lower metal electrode, but also effectively shield the upper metal electrode, the piezoelectric material layer, the lower metal electrode, and the generated piezoelectric drive signal, thereby preventing the piezoelectric drive signal from being interfered with by the electric field detection signal and preventing the piezoelectric material layer from being affected by the external environment.

[0135] Embodiment 11

[0136] like Fig.11 As shown, this embodiment provides a MEMS electric field sensor 21, including a substrate 22, a dynamic induction electrode 23, and a static induction electrode 24, wherein the dynamic induction electrode 23 and the static induction electrode 24 are respectively fixed on the left and right sides of the substrate 22, wherein a part of the dynamic induction electrode 23 is attached to the physical area 221, and the other part is located on the charge induction area 222, and is used to obtain at least one direct current signal of the current electric field. The static induction electrode 24 is located on the charge induction area 222, and is used to obtain at least one alternating current signal of the current electric field.

[0137] In this embodiment, specifically, the substrate 22 includes a physical region 221 and a charge induction region 222. The charge induction region 222 is formed by a local region of the top end surface of the physical region 221 being recessed toward the position of the bottom end surface thereof, and the physical region 221 surrounds the outer side of the charge induction region 222 to form a frame-like structure.

[0138] In this embodiment, specifically, the dynamic sensing electrode 23 includes a sensing electrode component a and a piezoelectric electrode component a. The sensing electrode component a is located above the charge sensing region 222 , a portion of the piezoelectric electrode component a is located on the physical region 221 , and the other portion is attached to a portion of the sensing electrode component a.

[0139] In the dynamic induction electrode 23, the direct current signal is obtained by converting the vibration generated by the piezoelectric electrode assembly a according to the excitation signal input from the external control circuit board.

[0140] Furthermore, the sensing electrode assembly a includes a substrate layer and a first metal electrode attached thereon, wherein the first metal electrode includes a first sensing electrode 231 and a first extension electrode a235 and a second extension electrode a236 respectively connected thereto.

[0141] Furthermore, the piezoelectric electrode assembly a mainly includes a connected piezoelectric electrode and a first lead-out electrode 234, wherein the piezoelectric electrode and the first lead-out electrode 234 are both part of the top end surface covering the solid area 221, the first extension electrode a235 and the second extension electrode a236 are both connected to the piezoelectric electrode, and at the same time, the first extension electrode a235 and the second extension electrode a236 are both connected to the first lead-out electrode 234.

[0142] Optionally, the piezoelectric electrode may be the first piezoelectric electrode a232 and the second piezoelectric electrode a233 in Example 1 or Example 2, or the piezoelectric electrode assembly in Example 3 or Example 9.

[0143] Preferably, the piezoelectric electrode assembly a is the piezoelectric electrode assembly in the third embodiment, including a first piezoelectric electrode a232 (i.e., the first piezoelectric electrode), a second piezoelectric electrode a233 (i.e., the second piezoelectric electrode), a base layer, a first bottom insulating layer, a second bottom insulating layer, a first top insulating layer, a second top insulating layer, a first shielding electrode and a second shielding electrode. The base layer is connected to the substrate layer, and the first lead-out electrode 234 covers a portion of the base layer and is connected to the first piezoelectric electrode a232 and the second piezoelectric electrode a233.

[0144] Furthermore, the external control circuit board is respectively connected to the first piezoelectric electrode a232, the second piezoelectric electrode a233 and the first lead-out electrode 234, and an excitation signal is input to the first piezoelectric electrode a232 and the second piezoelectric electrode a233 to drive the first piezoelectric electrode a232 and the second piezoelectric electrode a233 to vibrate, and the vibration signal output by the first piezoelectric electrode a232 and the second piezoelectric electrode a233 is input to the external control circuit board through the first lead-out electrode 234, thereby converting the DC current signal (i.e., the vibration signal) into a corresponding DC voltage value.

[0145] In this embodiment, specifically, the static sensing electrode 24 includes a sensing electrode component b and a piezoelectric electrode component b. The sensing electrode component b is located above the charge sensing region 222. A portion of the piezoelectric electrode component b is located on the physical region 221, and the other portion is attached to a portion of the sensing electrode component b.

[0146] In the static induction electrode 24, the AC current signal is obtained by the induction electrode assembly b according to the charge conversion induced in the current electric field.

[0147] The sensing electrode assembly b includes a substrate layer and a second metal electrode attached thereon, wherein the second metal electrode includes a second sensing electrode 241 and a first extension electrode b245 and a second extension electrode b246 respectively connected thereto.

[0148] The piezoelectric electrode assembly b mainly includes a connected piezoelectric electrode and a second lead-out electrode 244, wherein the piezoelectric electrode and the second lead-out electrode 244 are both part of the top end surface covering the solid area 221, the first extension electrode b245 and the second extension electrode b246 are both connected to the piezoelectric electrode, and at the same time, the first extension electrode b245 and the second extension electrode b246 are also connected to the second lead-out electrode 244.

[0149] Optionally, the piezoelectric electrode may be the first piezoelectric electrode b242 and the second piezoelectric electrode b243 in Example 1 or Example 2, or the piezoelectric electrode assembly in Example 3 or Example 9.

[0150] Preferably, the piezoelectric electrode assembly b is the piezoelectric electrode assembly in Example three, including a second piezoelectric electrode b242 (i.e., the first piezoelectric electrode), a second piezoelectric electrode b243 (i.e., the second piezoelectric electrode), a base layer, a first bottom insulating layer, a second bottom insulating layer, a first top insulating layer, a second top insulating layer, a first shielding electrode and a second shielding electrode.

[0151] When sensing an AC current signal, since the second metal electrode is located above the charge sensing region 222, when the current electric field changes dramatically, the second sensing electrode 241 can not only sense the charge in the current electric field, but also reciprocate in the upper position of the charge sensing region 222 and the inside of the charge sensing region 222 under the influence of the current electric field. After sensing the charge in the current electric field, the second sensing electrode 241 inputs the obtained AC current signal to the second extraction electrode 244 connected thereto through the first extension electrode b245 and the second extension electrode b246, and then inputs the AC current signal to the external control circuit board connected thereto through the second extraction electrode 244, thereby converting the AC current signal into a corresponding AC voltage value.

[0152] In addition, since the dynamic induction electrode 23 and the static induction electrode 24 have the same structure, they can be switched as needed.

[0153] Exemplarily, when sensing a direct current signal, the sensing electrode assembly a in the dynamic sensing electrode 23 does not sense the charge in the electric field, and the direct current signal is obtained by converting the vibration generated by the piezoelectric electrode assembly a according to the excitation signal, and the direct current signal is input to the external control circuit board connected thereto through the first lead-out electrode 234. When sensing an alternating current signal, the sensing electrode assembly b in the static sensing electrode 24 obtains the charge in the current electric field, and inputs the alternating current signal to the external control circuit board connected thereto through the second lead-out electrode 244. When the piezoelectric electrode assembly a in the dynamic sensing electrode 23 or the sensing electrode assembly b in the static sensing electrode 24 is damaged, since the dynamic sensing electrode 23 and the static sensing electrode 24 have the same structure and working principle, the dynamic sensing electrode 23 and the static sensing electrode 24 can be switched, so that the direct current signal is generated by the piezoelectric electrode assembly b in the static sensing electrode 24 according to the excitation signal, and the alternating current signal is generated by the charge induced by the sensing electrode assembly a in the current electric field, so as to realize the switching of the dynamic sensing electrode 23 and the static sensing electrode 24.

[0154] The above description is only a preferred embodiment of the present invention, which is only illustrative and not restrictive of the present invention. Those skilled in the art understand that many changes, modifications, and even equivalences may be made to the present invention within the spirit and scope defined by the claims of the present invention, but all of them will fall within the scope of protection of the present invention.

Claims

1. A piezoelectric electrode assembly, comprising a base layer, a bottom insulating layer, an upper metal electrode, a piezoelectric material layer and a lower metal electrode, wherein the upper metal electrode, the piezoelectric material layer, the lower metal electrode and the bottom insulating layer are sequentially superimposed on the base layer, characterized in that: Also included is a shield electrode, wherein: The shielding electrode is located in the upper region of the upper metal electrode and at least shields the top end surface of the upper metal electrode.

2. The piezoelectric electrode assembly according to claim 1, characterized in that: Also included is a top insulating layer, wherein: The top insulating layer is wrapped around the outer sides of the upper metal electrode and the piezoelectric material layer to form a packaging structure with the lower metal electrode, or the top insulating layer is wrapped around the outer sides of the upper metal electrode, the piezoelectric material layer and the lower metal electrode to form a packaging structure with the bottom insulating layer.

3. The piezoelectric electrode assembly according to claim 2, characterized in that: The shielding electrode is located outside the top insulating layer and covers a portion of the top end surface of the top insulating layer, or the shielding electrode wraps the top end surface of the top insulating layer and at least a portion of the outer peripheral wall surface.

4. A piezoelectric electrode assembly, comprising a base layer, a bottom insulating layer, at least one first upper metal electrode, at least one first piezoelectric material layer, at least one first lower metal electrode, at least one second upper metal electrode, at least one second piezoelectric material layer and at least one second lower metal electrode, wherein the first upper metal electrode, the first piezoelectric material layer and the first lower metal electrode are stacked in sequence, and the second upper metal electrode, the second piezoelectric material layer and the second lower metal electrode are stacked in sequence, characterized in that: Also includes at least one first shielding electrode and at least one second shielding electrode, wherein: The first shielding electrode is located in the upper region of the first upper metal electrode and at least shields the top end surface of the first upper metal electrode; The second shielding electrode is located in an area above the second upper metal electrode and at least shields a top end surface of the second upper metal electrode.

5. The piezoelectric electrode assembly according to claim 4, characterized in that: Also includes at least one first top insulating layer and at least one second top insulating layer, wherein: The first top insulating layer is wrapped around the outside of the first upper metal electrode and the first piezoelectric material layer, and forms a first packaging structure with the first lower metal electrode, or the first top insulating layer is wrapped around the outside of the first upper metal electrode, the first piezoelectric material layer and the first lower metal electrode, and forms a first packaging structure with the bottom insulating layer; The second top insulating layer is wrapped around the outside of the second upper metal electrode and the second piezoelectric material layer, and forms a second packaging structure with the second lower metal electrode, or the second top insulating layer is wrapped around the outside of the second upper metal electrode, the second piezoelectric material layer and the second lower metal electrode, and forms a second packaging structure with the bottom insulating layer.

6. The piezoelectric electrode assembly according to claim 5, characterized in that: The first shielding electrode is located outside the first top insulating layer and covers a portion of a top end surface of the first top insulating layer, or the first shielding electrode wraps the top end surface and at least a portion of an outer peripheral wall surface of the first top insulating layer; The second shielding electrode is located outside the second top insulating layer and covers a portion of the top end surface of the second top insulating layer, or the second shielding electrode wraps the top end surface and a portion of the outer peripheral wall surface of the second top insulating layer.

7. A piezoelectric electrode assembly, comprising a base layer, a bottom insulating layer, a lower metal electrode, at least one first upper metal electrode, at least one first piezoelectric material layer, at least one second upper metal electrode and at least one second piezoelectric material layer, wherein the first upper metal electrode is superimposed on the first piezoelectric material layer, the second upper metal electrode is superimposed on the second piezoelectric material layer, and the first piezoelectric material layer and the second piezoelectric material layer are respectively superimposed on the lower metal electrode, characterized in that: Also includes at least one first shielding electrode and at least one second shielding electrode, wherein: The first shielding electrode is located in the upper region of the first upper metal electrode and at least shields the top end surface of the first upper metal electrode; The second shielding electrode is located in an area above the second upper metal electrode and at least shields a top end surface of the second upper metal electrode.

8. The piezoelectric electrode assembly according to claim 7, characterized in that: Also includes at least a first top insulating layer and at least a second top insulating layer, wherein: The first top insulating layer is wrapped around the outer sides of the first upper metal electrode and the first piezoelectric material layer, and forms a first packaging structure with the lower metal electrode; The second top insulating layer is wrapped around the outer sides of the second upper metal electrode and the second piezoelectric material layer, and forms a second packaging structure with the lower metal electrode.

9. The piezoelectric electrode assembly according to claim 8, characterized in that: The first shielding electrode is located outside the first top insulating layer and covers a portion of a top end surface of the first top insulating layer, or the first shielding electrode wraps the top end surface and at least a portion of an outer peripheral wall surface of the first top insulating layer; The second shielding electrode is located outside the second top insulating layer and covers a portion of the top end surface of the second top insulating layer, or the second shielding electrode wraps the top end surface and at least a portion of the outer peripheral wall surface of the second top insulating layer.

10. The piezoelectric electrode assembly according to claim 7, characterized in that: Also included is a top insulating layer, wherein: The top insulating layer includes the first upper metal electrode, the first piezoelectric material layer, at least a portion of the lower metal electrode, the second upper metal electrode and the second piezoelectric material layer.

11. The piezoelectric electrode assembly according to claim 10, characterized in that: The first shielding electrode is located in the upper region of the first upper metal electrode and covers a portion of the top insulating layer; The second shielding electrode is located in an area above the second upper metal electrode and covers a portion of the top insulating layer.

12. A processing method for processing the piezoelectric electrode assembly according to any one of claims 1 to 11, characterized in that: The following steps are involved: S1, using a double-sided polished SOI wafer as a base layer; S2, thermally oxidizing the wafer so that a bottom insulating layer is formed on the upper surface of the wafer; S3, metal deposition, so that the lower metal electrode, the piezoelectric material layer and the upper metal electrode are sequentially superimposed on the bottom insulating layer; S4, etching the upper metal electrode so that the upper metal electrode covers at least a portion of the top end surface of the piezoelectric material layer; S5, etching the piezoelectric material layer so that the piezoelectric material layer at least covers a portion of the top end surface of the lower metal electrode; S6, etching the lower metal electrode so that the lower metal electrode at least covers a portion of the top end surface of the bottom insulating layer; S7, depositing a top insulating layer so that the top insulating layer at least covers the lower metal electrode, the piezoelectric material layer and the upper metal electrode; S8, etching the top insulating layer so that the top insulating layer at least covers the metal electrode and the piezoelectric material layer; S9. Depositing and etching a shielding electrode so that the shielding electrode covers at least a portion of the top end surface of the top insulating layer.

13. A MEMS electric field sensor, characterized in that: A piezoelectric electrode assembly comprising any one of claims 1 to 11.

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