Copper-indium-gallium-selenium three-glass assembly preparation method and three-glass assembly

Abstract

The invention relates to the technical field of solar cells, and discloses a copper-indium-gallium-selenium three-glass assembly preparation method and a three-glass assembly, the three-glass assembly comprises cover plate glass, substrate glass, back plate glass, a PVB packaging adhesive film and a butyl sealing tape, and the substrate glass comprises a copper-indium-gallium-selenium thin film layer, a molybdenum layer, a bus bar and soda-lime glass. According to the invention, the substrate glass is arranged between the cover plate glass and the back plate glass, the PVB packaging adhesive film and the butyl sealing adhesive tape are combined and laminated by the laminating equipment to form the three-glass assembly, so that the copper indium gallium selenide power generation substrate glass can be well protected. The copper-indium-gallium-selenium thin-film solar cell not only has a solar cell power generation function, but also can replace part of building materials, reduces the occupation of limited area space, can well meet the current popular BIPV (building integrated photovoltaics) market demand, develops a new field and a new market for copper-indium-gallium-selenium thin-film solar cells, and has a wide application prospect. And meanwhile, a basic scheme and technical support are provided for other types of thin film solar cells.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a method for preparing a copper indium gallium selenide three-glass component and a three-glass component. Background Art

[0002] Solar cells, also known as photovoltaic cells, are devices that convert sunlight directly into electrical energy. Solar cells are widely used in residential, commercial and industrial fields for power generation and supply. They are a clean energy technology that does not produce greenhouse gas emissions and helps reduce dependence on fossil fuels. They are the core components of solar photovoltaic systems and can generate electricity using the photoelectric effect of semiconductor materials.

[0003] Solar cells are based on the photoelectric effect. When light shines on certain materials (such as semiconductors), it excites electrons to jump from the valence band to the conduction band, generating free electron and hole pairs, thereby generating current. The basic structure of a solar cell includes a PN junction, which is a combination of a P-type semiconductor and an N-type semiconductor. When light shines on the PN junction, electron-hole pairs are generated. The electrons and holes are separated under the built-in electric field of the PN junction to form a current. Solar cells are usually made of semiconductor materials, the most common of which is silicon. Silicon is the most commonly used material for making solar cells because it has an appropriate energy gap (band gap) and good photoelectric conversion efficiency.

[0004] Thin-film solar cells have become one of the most promising thin-film solar cells with advantages such as low preparation cost, low temperature coefficient and excellent weak light performance, and have entered a stage of rapid industrial development. Especially in the field of BIPV photovoltaic building integration, it shows a good development trend.

[0005] Common structures of existing thin-film solar cells include: copper indium gallium selenide double-glass modules, in which the substrate glass is TCO glass with copper indium gallium selenide and molybdenum plated on the light-receiving surface, with a thickness of about 2.1 mm, and the cover glass is ordinary tempered glass with a thickness of about 3.2 mm. The tempered cover glass and the TCO substrate glass are laminated together to form a double-glass module with a total thickness of about 5.6 mm (including the thickness of the EVA film).

[0006] The overall thickness of the above-mentioned 3.2+2.1 double-glass module is relatively low, and the mechanical load strength is insufficient. Therefore, it can only be installed on the building in an auxiliary manner. In terminal applications, it still occupies a large amount of limited area space like crystalline silicon photovoltaic cells. However, these limited area spaces that can be used are limited after all. Therefore, the existing copper indium gallium selenide double-glass modules are difficult to meet the development needs of photovoltaic building integration. It is imperative to develop new photovoltaic modules combined with buildings.

[0007] SUMMARY OF THE INVENTION

[0008] The technical problem solved by the present invention is that the existing copper indium gallium selenide double-glass components are difficult to meet the development needs of photovoltaic building integration.

[0009] The purpose of the present invention can be achieved through the following technical solutions:

[0010] A method for preparing a copper indium gallium selenide three-glass component comprises the following steps:

[0011] S1: clean the soda-lime glass with molybdenum layer, enter the laser scribing system to obtain P1 scribing, and then clean it again;

[0012] S2: drying the cleaned soda-lime glass with hot air to obtain a substrate glass layer;

[0013] S3: obtaining a CIGS absorption layer on the substrate glass layer by magnetron sputtering, selenization and co-evaporation;

[0014] S4: A CdS / In2S3 buffer layer is obtained on the CIGS absorption layer by a magnetron sputtering method, and then a laser scribing system is used to obtain a P2 scribing line and then the layer is cleaned again;

[0015] S5: forming an AZO window layer on the CdS / In2S3 buffer layer by magnetron sputtering, and entering a mechanical line-marking system to obtain a P3 line;

[0016] S6: removing the MO layer at the edge of the substrate glass and the CIGS layer at the confluence position;

[0017] S7: welding a conductive bus bar on the MO electrode layer to obtain a substrate glass component;

[0018] S8: Lead out the busbar end of the substrate glass to obtain an external interface, and pave it with an insulating tape;

[0019] S9: Affix butyl sealing tape around the light-receiving surface of the substrate glass, with the long side and the short side of the edge-sealing tape overlapping;

[0020] S10: The inside of the edge sealing tape on the light-receiving surface of the substrate glass obtained in S9 is covered with PVB film, with the overlap between the edge sealing tape and the PVB film being 2 mm, and the back side of the substrate glass (the other side opposite to the light-receiving surface) is covered with PVB film, and then two 8 mm tempered cover glass sheets (located on both sides of the substrate glass as cover glass and back glass respectively) are combined with the substrate glass, and then laminated to obtain a copper indium gallium selenide three-glass power generation module.

[0021] In one solution of the present invention: in step S6, a mechanical cutter is used to remove the molybdenum layer at the edge of the substrate glass, and a laser edge cleaning device is used to remove the CIGS layer at the confluence position.

[0022] In one solution of the present invention: in step S7, the welding process is performed by ultrasonic welding; the bus bar is an aluminum bus bar.

[0023] In one embodiment of the present invention: in step S9, the thickness of the butyl sealing tape is 1.5 mm.

[0024] In one solution of the present invention: in step S10, the thickness of the PVB packaging film is 1.14 mm.

[0025] In one solution of the present invention: in step S10, the size of the PVB film on the back of the substrate glass during laying is 10 mm larger than the size of the substrate glass.

[0026] In one solution of the present invention: in step S10, high-temperature tapes are pasted on the four corners of the three-glass assembly after the cover glass, substrate glass and back glass are assembled, and then the assembly is placed in the feed port of the laminator. After the laminator equipment is air-pressed and confirmed, the lamination process is completed, and then the laminated three-glass assembly is taken out, the adhesive film overflowing from the edge is removed, and the high-temperature tape is cleaned off.

[0027] In one embodiment of the present invention: during the lamination process, the temperature of the lamination section is 155-158°C, the vacuum time is 20-25 minutes, the pressure one is 20Kpa, the time is 50 seconds; the pressure two is 50Kpa, the time is 50 seconds; the pressure three is 70Kpa, the time is 7 minutes.

[0028] In one embodiment of the present invention, during the lamination process, the temperature of the cold pressing section is 40-45°C for 7 minutes, and the temperature of the hot pressing section is 143°C for 35-40 minutes.

[0029] A copper indium gallium selenide triple-glass component prepared by the preparation method as described above.

[0030] Beneficial effects of the present invention:

[0031] The three-wave module of the present application includes cover glass, substrate glass, back glass, PVB encapsulation film and butyl sealing tape. The substrate glass includes a copper indium gallium selenide thin film layer, a molybdenum layer, a bus bar and soda-lime glass. The substrate glass is between the cover glass and the back glass. After being combined with the PVB encapsulation film and the butyl sealing tape, it is laminated by a laminating device to form a three-glass module, so that the copper indium gallium selenide power generation substrate glass can be well protected. It not only has the function of solar cell power generation, but also can replace some building materials, reduce the occupation of limited area space, and can well meet the current popular BIPV photovoltaic building integration market demand, open up new fields and new markets for copper indium gallium selenide thin-film solar cells, and provide basic solutions and technical support for other types of thin-film solar cells.

[0032] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The above and / or additional aspects and advantages of the present invention will become apparent and easy to understand from the description of the embodiments in conjunction with the following drawings. Obviously, the drawings in the following description are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work. Among them:

[0034] Figure 1 This is a flow chart of the method for manufacturing a copper indium gallium selenide triple-glass module of the present invention;

[0035] Figure 2 is a schematic structural diagram of a laminator device used in an embodiment of the present invention;

[0036] Figure 3 It is a schematic diagram of the structure of the segmented laminating machine equipment used in the embodiment of the present invention.

[0037] The accompanying drawings are marked as follows: 1. Laminator. DETAILED DESCRIPTION

[0038] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0039] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., and orientations or positional relationships indicated are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0040] In the description of the present invention, "several" means one or more, "more" means more than two, "greater than", "less than", "exceed" etc. are understood as not including the number itself, and "above", "below", "within" etc. are understood as including the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing the technical features, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0041] The common structure of existing thin-film solar cells is a copper indium gallium selenide double-glass module. The substrate glass in the double-glass module is TCO glass with copper indium gallium selenide and molybdenum plated on the light-receiving surface, and its thickness is about 2.1mm. The cover glass is ordinary tempered glass, and its thickness is about 3.2mm. The tempered cover glass and the TCO substrate glass are laminated together to form a double-glass module, and its total thickness is about 5.6mm (including the thickness of the EVA film).

[0042] The overall thickness of the above-mentioned 3.2+2.1 double-glass module is relatively low, and the mechanical load strength is insufficient, so it can only be installed on the building in an auxiliary manner. In terminal applications, it still occupies a large amount of limited area space like crystalline silicon photovoltaic cells. However, these limited areas that can be used are limited after all. Therefore, the existing copper indium gallium selenide double-glass modules are difficult to meet the development needs of photovoltaic building integration, and it is imperative to develop new photovoltaic modules combined with buildings.

[0043] In order to solve the above problems, the present application provides a copper indium gallium selenide three-glass component and a preparation method, including cover glass, substrate glass, back glass, PVB encapsulation film and butyl sealing tape, the substrate glass includes a copper indium gallium selenide thin film layer, a molybdenum layer and soda-lime glass, a conductive aluminum bus bar is welded on the side in contact with the CIGS film layer, and the positive and negative electrodes are led out using adhesive wires, and the substrate glass is between the cover glass and the back glass. The present application forms a new three-glass component by combining PVB encapsulation film and edge-sealing butyl tape, and the three-glass component is formed by laminating equipment, so that the copper indium gallium selenide power generation substrate glass can be well protected. It not only has the function of solar cell power generation, but also can replace some building materials, reduce the occupation of limited area space, and can well meet the current popular BIPV photovoltaic building integration market demand, open up new fields and new markets for copper indium gallium selenide thin-film solar cells, and provide basic solutions and technical support for other types of thin-film solar cells.

[0044] See also Figure 1-2 The present invention is a copper indium gallium selenide three-glass component, including cover glass, substrate glass, back glass, PVB packaging film and butyl sealing tape. The substrate glass is between the cover glass and the back glass, so that the copper indium gallium selenide power generation substrate glass can be well protected. The three are formed by combining PVB packaging film and butyl sealing tape, and are laminated by laminating equipment to form a new three-glass component. The substrate glass includes a copper indium gallium selenide thin film layer, a molybdenum layer and a 2.1mm soda-lime glass. A conductive bus bar (the bus bar can be made of aluminum) is welded on the side in contact with the CIGS film layer.

[0045] A method for preparing the above-mentioned copper indium gallium selenide three-glass component comprises the following steps:

[0046] S1: The soda-lime glass with the molybdenum layer (Mo) is cleaned by a cleaning machine, and then enters the laser scribing system to obtain the P1 scribing line and is cleaned again;

[0047] S2: drying the cleaned soda-lime glass with hot air to obtain a substrate glass layer;

[0048] S3: obtaining a CIGS absorption layer on the substrate glass layer by magnetron sputtering, selenization and co-evaporation;

[0049] S4: A CdS / In2S3 buffer layer is obtained on the CIGS absorption layer by a magnetron sputtering method, and then a laser scribing system is used to obtain a P2 scribing line and then the layer is cleaned again;

[0050] S5: forming an AZO window layer on the CdS / In2S3 buffer layer by magnetron sputtering, and entering a mechanical line-marking system to obtain a P3 line;

[0051] S6: removing the MO layer at the edge of the substrate glass and the CIGS layer at the confluence position. Specifically, a mechanical cutter may be used to remove the molybdenum layer (Mo) at the edge of the substrate glass, and a laser edge cleaning device may be used to remove the CIGS layer at the confluence position.

[0052] S7: welding a bus bar on the MO electrode layer to obtain a substrate glass component; the welding process can be performed by ultrasonic welding, and the bus bar is made of a conductive material, such as an aluminum bus bar;

[0053] S8: Lead out the busbar end of the substrate glass to obtain an external interface (positive and negative electrodes), and use an insulating tape with a thickness of about 0.1 (mm) to pave the lead wire to protect the safety of the lead wire;

[0054] S9: Stick butyl sealing tape about 2 mm away from the edge around the light-receiving surface of the substrate glass. The thickness of the butyl sealing tape can be between 0.7 mm and 1.5 mm, and the long side and the short side are overlapped;

[0055] S10: The light-receiving surface of the substrate glass obtained in S9 is covered with PVB film inside the edge-sealing tape. The overlap between the edge-sealing tape and the PVB film can be in the range of 1.5mm-3mm, and the preferred overlap width is 2mm. The back side of the substrate glass (the other side opposite to the light-receiving surface) needs to be covered with PVB film, and then two pieces of 8mm tempered glass are used to combine (located on both sides of the substrate glass as cover glass and back glass respectively), and then laminated to obtain a copper indium gallium selenide three-glass power generation component.

[0056] The step S10 specifically includes the following steps:

[0057] S10.1: Put the substrate glass after the lead wire is connected into the automatic line to complete the edge sealing with butyl sealing tape;

[0058] S10.2: Cut a 1.14mm thick PVB film to a target size and lay it on the light-receiving surface of the substrate glass. After passing the debugging, first laminate it with the first 8mm tempered cover glass, then cut a PVB film larger than the substrate glass and lay it on the back, and then laminate it with the second 8mm tempered cover glass to complete the lamination process before lamination; wherein, the thickness of the PVB encapsulation film can be between 0.76mm and 1.5mm, and the size of the PVB film on the back of the substrate glass when laid is 5mm-15mm larger than the size of the substrate glass. As an example, the size of the PVB film on the back of the substrate glass when laid is 10mm larger than the size of the substrate glass.

[0059] S10.3: After the cover glass, substrate glass and back glass are assembled, high temperature tape is pasted on the four corners of the three-glass assembly to prevent the 8mm glass from shifting, and then the glass is placed in the feeding port of the laminator 1. After the laminator 1 equipment is compressed and confirmed, the lamination process is completed;

[0060] S10.4: In order to balance the heat and stress of the components, the three-glass components are evenly distributed. Considering the weight and the size of the lamination chamber, the number of laminations per time is 3 groups (three-glass components).

[0061] S10.5: Take out the laminated three-glass module, remove the overflowed film on the edge, and clean off the high-temperature tape. The lamination of the three-glass module is completed.

[0062] In one embodiment of the present invention, the lamination process is carried out in the laminator 1. During the lamination process, the temperature of the lamination section can be 155-158°C, the vacuum time is 20-25 minutes, the pressure 1 is 20Kpa-30Kpa, the time is 30-60 seconds, the pressure 2 is 50Kpa-70Kpa, the time is 30-60 seconds; the pressure 3 is 50Kpa-90Kpa, the time is 3-10 minutes. The temperature of the hot pressing section is 140°C-145°C, and the time is 35-40 minutes.

[0063] As an example, the temperature of the lamination section can be 155-158°C, the vacuum time is 20-25 minutes, the pressure one is 20Kpa, the time is 50 seconds, the pressure two is 50Kpa, the time is 50 seconds, the pressure three is 70Kpa, the time is 7 minutes. The temperature of the cold pressing section is 40-45°C, the time is 7 minutes. The temperature of the hot pressing section is 143°C, the time is 35-40 minutes.

[0064] The above is a detailed description of an embodiment of the present invention, but the content is only a preferred embodiment of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made according to the scope of application of the present invention should still fall within the scope of the claims of the present invention.

Claims

1. A method for preparing a copper indium gallium selenide glass module, characterized in that: The steps include: S1: clean the soda-lime glass with molybdenum layer, enter the laser scribing system to obtain P1 scribing, and then clean it again; S2: drying the cleaned soda-lime glass with hot air to obtain a substrate glass layer; S3: obtaining a CIGS absorption layer on the substrate glass layer by magnetron sputtering, selenization and co-evaporation; S4: A CdS / In2S3 buffer layer is obtained on the CIGS absorption layer by a magnetron sputtering method, and then a laser scribing system is used to obtain a P2 scribing line and then the layer is cleaned again; S5: forming an AZO window layer on the CdS / In2S3 buffer layer by magnetron sputtering, and entering a mechanical line-marking system to obtain a P3 line; S6: removing the MO layer at the edge of the substrate glass and the CIGS layer at the confluence position; S7: welding a conductive bus bar on the MO electrode layer to obtain a substrate glass component; S8: Lead out the busbar end of the substrate glass to obtain an external interface, and pave it with an insulating tape; S9: Affix butyl sealing tape around the light-receiving surface of the substrate glass, with the long side and the short side of the edge-sealing tape overlapping; S10: The light-receiving side edge-sealing tape of the substrate glass obtained in S9 is covered with PVB film, with the overlap between the edge-sealing tape and the PVB film being 1.5mm-3mm. The back side of the substrate glass is covered with PVB film, and then two pieces of 8mm tempered glass are combined with the substrate glass, and then a lamination process is performed to prepare a copper indium gallium selenide three-glass power generation component product.

2. The method for preparing a copper indium gallium selenide glass module according to claim 1, characterized in that: In step S6, a mechanical cutter is used to remove the molybdenum layer at the edge of the substrate glass, and a laser edge cleaning device is used to remove the CIGS layer at the confluence position.

3. The method for preparing a copper indium gallium selenide glass module according to claim 1, characterized in that: In step S7, the welding process is performed by ultrasonic welding; the bus bar is an aluminum bus bar.

4. The method for preparing a copper indium gallium selenide glass module according to claim 1, characterized in that: In step S9, the thickness of the butyl sealing tape is 0.7 mm-1.5 mm.

5. The method for preparing a copper indium gallium selenide glass module according to claim 1, characterized in that: In step S10, the thickness of the PVB packaging film is 0.76 mm-1.5 mm.

6. The method for preparing a copper indium gallium selenide glass module according to claim 5, characterized in that: In step S10, the size of the PVB film on the back of the substrate glass is 5 mm-15 mm larger than the size of the substrate glass when laid.

7. The method for preparing a copper indium gallium selenide glass module according to claim 1, characterized in that: In step S10, high-temperature tape is pasted on the four corners of the three-glass assembly after the cover glass, substrate glass and back glass are assembled to fix it, and then it is put into the feeding port of the laminator. After the laminator equipment is compressed and the machine is confirmed to be normal, the lamination process is completed. Finally, the laminated three-glass assembly is taken out, the overflowing film on the edge is removed, and the high-temperature tape is cleaned off.

8. The method for preparing a copper indium gallium selenide glass module according to claim 1, characterized in that: During the lamination process, the temperature of the lamination section is set to 155-158°C, the vacuum time is set to 20-25 minutes, the pressure one is 20Kpa-30Kpa, the time is 30-60 seconds; the pressure two is 50Kpa-70Kpa, the time is 30-60 seconds; the pressure three is 50Kpa-90Kpa, the time is 3-10 minutes.

9. The method for preparing a copper indium gallium selenide glass module according to claim 1, characterized in that: During the lamination process, the temperature of the cold pressing section is 40-45°C, and the time is 3-10 minutes; the temperature of the hot pressing section is 140°C-145°C, and the time is 35-40 minutes.

10. A three-glass component, wherein the three-glass component is prepared according to the method for preparing a copper indium gallium selenide three-glass component according to any one of claims 1 to 9.

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