Resistance test method and device, electronic equipment and storage medium

Abstract

The invention discloses a resistance testing method and device, electronic equipment and a storage medium. The method comprises the following steps: acquiring a first resistance value and first resistance associated data of a target resistor in a circuit at a plurality of first moments in a preset time period, and determining a resistance change rate at a second moment according to the first resistance value and the first resistance associated data; acquiring second resistance associated data of the target resistor at a second moment, determining a circuit state parameter according to the second resistance associated data, and determining a resistance early warning threshold value at the second moment according to the first resistance value, the resistance change rate and the circuit state parameter; and obtaining a second resistance value of the target resistor at the second moment, and determining the target resistor to be in an abnormal state when the second resistance value exceeds a resistance early warning threshold, thereby solving the problem that the influence of environment and electrical factors on the resistor cannot be comprehensively considered in the related technology, resulting in inaccurate anomaly detection, and improving the detection accuracy. And the accuracy of judging the abnormal state of the resistor is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of resistance state testing, and in particular to a resistance testing method, device, electronic equipment and storage medium. Background Art

[0002] During circuit operation, the resistance value will be affected by many factors, such as environmental factors (such as ambient temperature, etc.) and various electrical parameters in the circuit where the resistor is located (such as current, voltage, power, etc.).

[0003] In the related art, the resistance detection method often simply obtains the resistance value, and fails to comprehensively consider various related data closely related to the resistance performance, resulting in insufficient prediction accuracy of the resistance state change. Once the resistance is abnormal, due to the lack of timely and effective detection mechanism, it may not be able to identify such problems immediately, thereby increasing the possibility of circuit failure and adversely affecting the stable operation of the overall circuit system. Summary of the invention

[0004] The present invention provides a resistance testing method, device, electronic device and storage medium to solve the problem in the related art that the influence of environmental and electrical factors on resistance cannot be fully considered, resulting in inaccurate abnormality detection.

[0005] According to one aspect of the present invention, a resistance testing method is provided, the method comprising:

[0006] Obtaining first resistance values ​​and first resistance-related data of a target resistor in a circuit at multiple first moments within a preset time period, and determining a resistance change rate at a second moment according to the first resistance values ​​and the first resistance-related data; wherein the first resistance-related data at least includes ambient temperature data, and the second moment is later than the first moment;

[0007] Acquire second resistance-related data of the target resistance at the second moment, determine a circuit state parameter according to the second resistance-related data, and determine a resistance warning threshold at the second moment according to the first resistance value, the resistance change rate, and the circuit state parameter; wherein the second resistance-related data includes at least one of ambient temperature data, current data, voltage data, power data, and resistance material data;

[0008] A second resistance value of the target resistance at the second moment is acquired, and when the second resistance value exceeds the resistance warning threshold, it is determined that the target resistance is in an abnormal state.

[0009] According to another aspect of the present invention, there is provided a resistance testing device, the device comprising:

[0010] a resistance change rate determination module, configured to obtain first resistance values ​​and first resistance-related data of a target resistance in a circuit at a plurality of first moments within a preset time period, and determine the resistance change rate at a second moment according to the first resistance values ​​and the first resistance-related data; wherein the first resistance-related data at least includes ambient temperature data, and the second moment is later than the first moment;

[0011] a resistance warning threshold determination module, configured to obtain second resistance associated data of the target resistance at the second moment, determine a circuit state parameter according to the second resistance associated data, and determine a resistance warning threshold at the second moment according to the first resistance value, the resistance change rate, and the circuit state parameter; wherein the second resistance associated data includes at least one of ambient temperature data, current data, voltage data, power data, and resistance material data;

[0012] The resistance state determination module is used to obtain a second resistance value of the target resistance at the second moment, and determine that the target resistance is in an abnormal state when the second resistance value exceeds the resistance warning threshold.

[0013] According to another aspect of the present invention, an electronic device is provided, the electronic device comprising:

[0014] at least one processor; and

[0015] a memory communicatively connected to the at least one processor; wherein,

[0016] The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the resistance testing method described in any embodiment of the present invention.

[0017] According to another aspect of the present invention, a computer-readable storage medium is provided, wherein the computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to implement the resistance testing method described in any embodiment of the present invention when executed.

[0018] The technical solution of the embodiment of the present invention is as follows: first, by obtaining the first resistance value and the first resistance-related data of the target resistor in the circuit at multiple first moments within a preset time period, the resistance change rate at the second moment is determined according to the first resistance value and the first resistance-related data; since the first resistance-related data at least includes the ambient temperature data, the second moment is later than the first moment, the resistance change rate can be determined, and the influence of the ambient temperature can be considered to improve the accuracy and reliability of long-term detection and prediction of circuit performance; then, by obtaining the second resistance-related data of the target resistor at the second moment, the circuit state parameters are determined according to the second resistance-related data, and the resistance warning threshold at the second moment is determined according to the first resistance value, the resistance change rate and the circuit state parameters; since the The second resistance-related data includes at least one of ambient temperature data, current data, voltage data, power data and resistance material data. The circuit state parameters can be determined through multi-dimensional data, and the resistance warning threshold can be determined in combination with the resistance change rate to improve the accuracy of the resistance warning. Finally, by obtaining the second resistance value of the target resistance at the second moment, when the second resistance value exceeds the resistance warning threshold, the target resistance is determined to be in an abnormal state. The resistance state can be detected, the anomaly can be quickly identified, and circuit failures can be effectively prevented. This solves the problem that the related technology cannot fully consider the impact of environmental and electrical factors on resistance, resulting in inaccurate anomaly detection. It not only improves the accuracy of judging the abnormal state of the resistance, but also provides data support for preventive maintenance, thereby effectively reducing the risk of circuit system failure.

[0019] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0021] Figure 1 is a flow chart of a resistance testing method provided according to Embodiment 1 of the present invention;

[0022] Figure 2 is a flow chart of a resistance testing method provided according to Embodiment 2 of the present invention;

[0023] Figure 3 is a structural schematic diagram of a resistance testing device provided according to Embodiment 3 of the present invention;

[0024] Figure 4 It is a structural schematic diagram of an electronic device for implementing the resistance testing method according to an embodiment of the present invention. DETAILED DESCRIPTION

[0025] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0026] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0027] It should be noted that the modifications of "one" and "plurality" mentioned in the present disclosure are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more".

[0028] The names of the messages or information exchanged between multiple devices in the embodiments of the present disclosure are only used for illustrative purposes and are not used to limit the scope of these messages or information.

[0029] It is understandable that before using the technical solutions disclosed in the embodiments of the present disclosure, the types, scope of use, usage scenarios, etc. of the personal information involved in the present disclosure should be informed to the user and the user's authorization should be obtained in an appropriate manner in accordance with relevant laws and regulations.

[0030] For example, in response to receiving an active request from a user, a prompt message is sent to the user to clearly prompt the user that the operation requested to be performed will require obtaining and using the user's personal information. Thus, the user can autonomously choose whether to provide personal information to software or hardware such as an electronic device, application, server, or storage medium that performs the operation of the technical solution of the present disclosure according to the prompt message.

[0031] As an optional but non-limiting implementation, in response to receiving an active request from the user, the prompt information may be sent to the user in the form of a pop-up window, in which the prompt information may be presented in text form. In addition, the pop-up window may also carry a selection control for the user to choose "agree" or "disagree" to provide personal information to the electronic device.

[0032] It is understandable that the above notification and the process of obtaining user authorization are merely illustrative and do not constitute a limitation on the implementation of the present disclosure. Other methods that meet the relevant laws and regulations may also be applied to the implementation of the present disclosure.

[0033] It is understandable that the data involved in this technical solution (including but not limited to the data itself, the acquisition or use of the data) shall comply with the requirements of relevant laws, regulations and relevant provisions.

[0034] Embodiment 1

[0035] Figure 1 A flowchart of a resistance testing method is provided for the first embodiment of the present invention. This embodiment can be applied to circuits for high-precision detection and warning of resistance status, especially in conditions of changing environments. The method can be performed by a resistance testing device, which can be implemented in the form of hardware and / or software. Optionally, it can be implemented by an electronic device, which can be a mobile terminal, a PC, or a server.

[0036] like Figure 1 As shown, the method may specifically include:

[0037] S110. Obtain first resistance values ​​and first resistance-related data of a target resistor in a circuit at multiple first moments within a preset time period, and determine a resistance change rate at a second moment according to the first resistance values ​​and the first resistance-related data; wherein the first resistance-related data at least includes ambient temperature data, and the second moment is later than the first moment.

[0038] Among them, the target resistance can be understood as the resistance detected or used for analysis in the circuit. The target resistance is used as a detection object to evaluate whether the working state is normal. The preset time period can be understood as a predetermined time interval, and the resistance data is collected within the time interval. The first moment can be understood as any specific time point within the preset time period, which is used to mark the time point of measuring the first resistance value and the first resistance-related data. The first moment can be evenly divided or unevenly divided within the preset time period, and can be specifically set according to needs, which is not limited here. The first resistance value can be understood as the resistance value of the target resistance measured at the first moment, which is used to reflect the state of the target resistance at a specific time point. The first resistance-related data can be understood as data of the environment or other physical conditions related to the target resistance. The first resistance-related data at least includes ambient temperature data, etc., which is used to more accurately analyze the cause of the change of the target resistance. The ambient temperature data can be understood as information about the ambient temperature around the target resistance. The ambient temperature data is one of the factors affecting the target resistance value and is used to correct the resistance value measurement result. The resistance change rate can be understood as the change rate of the resistance value within the preset time period, which is used to reflect the speed at which the resistance value at the second moment changes with time, and helps predict the working state of the resistance value at the second moment. The second moment can be understood as a time point later than the first moment, and is used to compare the resistance states at different time points to determine the operating status of the target resistor.

[0039] On the basis of the above scheme, optionally, determining the resistance change rate at the second moment based on the first resistance value and the first resistance associated data includes: determining the ambient temperature characteristics based on the number of first moments of the first resistance value, the first moment and ambient temperature data, and determining the maximum value, minimum value and average value of the first resistance value within a preset time period based on the first moment and the first resistance value; determining the resistance value fluctuation value based on the maximum value, the minimum value, the average value and the first resistance value, and performing Fourier transform on the first resistance value at the first moment to obtain the amplitude of the first resistance value; and weighted summing the ambient temperature characteristics, the resistance value fluctuation value and the two maximum values ​​of the amplitude to obtain the resistance change rate at the second moment.

[0040] Among them, the number of the first moment can be understood as the total number of different time points at which the first resistance value is collected within a preset time period, which is helpful for calculating statistical parameters such as average value, maximum value and minimum value. The ambient temperature characteristic can be understood as an indicator describing the ambient temperature change characteristics based on the first moment and the corresponding ambient temperature data. The resistance value fluctuation value can be understood as an indicator representing the amplitude of resistance value change determined based on the maximum value, minimum value, average value and the first resistance value, which is used to reflect the stability or fluctuation of the resistance value. The amplitude can be understood as the intensity of the first resistance value obtained by Fourier transform in the frequency domain, reflecting the different frequency components in the resistance value.

[0041] In an optional implementation manner, the determining of the ambient temperature characteristic according to the number of the first resistance value at the first moment, the first moment and ambient temperature data may be based on the following formula:

[0042]

[0043] w i =α(1-α) i ;

[0044] Where T represents the ambient temperature characteristic, T i represents the temperature value at the first moment of i, w i represents the weight, m ​​represents the number of first moments of the first resistance value, m can be 3-7, and the weight w i According to the exponential decay law, w i =α(1-α) i , α represents the attenuation factor, and the value of α is 0.2-0.4.

[0045] In an optional implementation manner, the resistance fluctuation value determined according to the maximum value, the minimum value, the average value and the first resistance value may be determined based on the following formula:

[0046]

[0047] Among them, A represents the fluctuation range of resistance value, R max and R min Respectively represent the maximum and minimum values ​​of the first resistance value within the preset time period, R i represents the first resistance value at the i-th first moment in the preset time period, is the average value of these resistance values, m represents the number of first moments of the first resistance value, and k represents the adjustment coefficient;

[0048] In an optional implementation manner, the weighted sum of the ambient temperature characteristic, the resistance value fluctuation value and the two maximum values ​​of the amplitude to obtain the resistance change rate at the second moment can be determined based on the following formula:

[0049] r=β0+β1A+β2A f1 +β3A f2 +β4T+ε;

[0050] Among them, r represents the resistance change rate, A represents the resistance fluctuation range, and A f1 and A f2 represents the two maximum values ​​in the amplitude, T represents the ambient temperature characteristic, β0, β1, β2, β3 and β4 represent weights, and ε represents the error term.

[0051] By adopting this technical solution, the accuracy of resistance value change rate calculation is improved by considering the influence of ambient temperature on resistance; secondly, the fluctuation value is determined by analyzing the maximum, minimum and average resistance values, which can effectively identify abnormal fluctuations in resistance values; thirdly, the frequency domain information of resistance values ​​is obtained by Fourier transform to further capture potential periodic changes, and the weighted summation ensures a reasonable evaluation of the contribution of different influencing factors to the resistance change rate, thereby providing a more reliable resistance state detection and early warning mechanism, which helps to timely discover and deal with possible circuit faults.

[0052] On the basis of the above scheme, optionally, before obtaining the first resistance value and first resistance associated data of the target resistance in the circuit at multiple first moments in a preset time period, it also includes: obtaining the third resistance value and third resistance associated data of the target resistance in the circuit at multiple third moments in a historical time period, wherein the third resistance associated data at least includes historical ambient temperature data; determining the historical resistance change rate, historical resistance value fluctuation value and historical amplitude according to the third resistance value, and determining the historical ambient temperature characteristics according to the historical ambient temperature data; determining the weight coefficient related to the resistance value fluctuation value, ambient temperature characteristics and amplitude in the resistance change rate according to the historical resistance change rate, historical resistance value fluctuation value, historical ambient temperature characteristics and historical amplitude.

[0053] Wherein, the historical time period can be understood as a period of time in the past, during which the relevant data of the third resistance value and the third resistance associated data have been recorded. The historical time period is used to analyze the performance of the target resistor in the historical time period. The third moment can be understood as any specific time point in the historical time period, which is used to mark the time point of measuring the first resistance value and the first resistance associated data. The third resistance value can be understood as the resistance value of the target resistor measured at the third moment, which is used to analyze the change trend of the target resistance over time. The third resistance associated data can be understood as data of the environment or other physical conditions related to the third resistance value. The third resistance associated data at least includes historical ambient temperature data, etc., which is used to more accurately analyze the cause of the resistance change. The historical ambient temperature data can be understood as information indicating the ambient temperature of the target resistor in the historical time period. The historical resistance change rate can be understood as the change rate of the third resistance value in the historical time period calculated based on historical data. The historical resistance value fluctuation value can be understood as an indicator indicating the amplitude of the resistance value change calculated based on the third resistance value, which is used to reflect the stability or fluctuation of the resistance value of the target resistor in the historical time period. The historical amplitude can be understood as the intensity of the third resistance value obtained by Fourier transform in the frequency domain, reflecting the different frequency components in the third resistance value. The historical ambient temperature characteristic is an indicator describing the ambient temperature change characteristics based on the historical ambient temperature data. The weight coefficient can be understood as a numerical value used to adjust the influence of different variables (such as resistance value fluctuation value, ambient temperature characteristics and amplitude, etc.) on the historical resistance change rate. The weight coefficient can make the calculated historical resistance change rate more accurate and better reflect the actual situation by learning the third resistance value and the third resistance associated data.

[0054] In an optional implementation manner, the historical resistance change rate determined according to the third resistance value may be determined based on the following formula:

[0055]

[0056] Where r' represents the historical resistance change rate, R j represents the third resistance value at the jth third moment in the historical time period, R1 represents the third resistance value at the first third moment in the historical time period, n represents the number of third moments of the third resistance value, and a i represents the weight coefficient, △t i Represents the time interval between the jth third moment and the 1st third moment.

[0057] Determine the historical resistance fluctuation value, historical ambient temperature characteristics and historical amplitude according to the method of S110. Select multiple historical time periods and determine multiple sets of equations of historical resistance change rate and historical resistance fluctuation value, historical amplitude and historical ambient temperature characteristics according to the method of S220 above, determine multiple sets of coefficients of β0, β1, β2, β3 and β4 according to the results of multiple solutions, and determine the weight coefficient related to the resistance fluctuation value, ambient temperature characteristics and amplitude in the resistance change rate by taking the average value. Determine the relationship between the resistance change rate (excluding the error value ε) according to the weight coefficient. Substitute the numerical values ​​of the above multiple sets of historical resistance change rates and historical resistance fluctuation values, historical amplitude and historical ambient temperature characteristics into the relationship, determine a set of error values ​​ε, take the average value of ε, and use the average value as the error value in the relationship.

[0058] Based on the above solution, optionally, after acquiring the first resistance values ​​and first resistance associated data of the target resistance in the circuit at multiple first moments within a preset time period, the method further includes:

[0059] Determine the mean and standard deviation of the first resistance values ​​at multiple first moments within the preset time period, determine the target range based on the mean and the standard deviation, mark the first resistance value exceeding the target range as an abnormal resistance value, and correct the abnormal resistance value using a cubic spline interpolation method.

[0060] The target may be understood as a normal resistance range determined according to the mean value and the standard deviation. Exemplarily, the normal range may be the sum of the mean value and three times the standard deviation.

[0061] An optional implementation method, assuming that a first resistance value of a circuit is collected in the past month (historical time period), collected once every hour, and a total of 720 first resistance values ​​are obtained. The mean μ=10Ω and the standard deviation σ=1Ω of the first resistance value in this time period are calculated, then μ+3σ=13Ω, and these 720 first resistance values ​​are checked, and it is found that there are 15 data points of the first resistance value greater than 13Ω, and these data points are marked as abnormal resistance values. For example, one of the first resistance values ​​is 15Ω, and the other is 14.5Ω, etc., and these data are all beyond the range of μ+3σ. The abnormal resistance value is corrected by using the cubic spline interpolation method. Taking the data point with the first resistance value of 15Ω as an example, this data point is marked as abnormal, and several (usually adjacent) normal resistance value data points are selected around it. Assuming that two normal first resistance values ​​are selected before and after the 15Ω data point, which are 12Ω, 12.5Ω and 13.2Ω, 13Ω respectively, a cubic spline function is constructed through these four normal first resistance value data points using the cubic spline interpolation method. Then, the position corresponding to 15Ω is substituted into the cubic spline function to obtain the corrected first resistance value. Assuming that the corrected first resistance value is 12.8Ω after calculation, the other 14 abnormal resistance values ​​are corrected by cubic spline interpolation in the same way to obtain a set of corrected first resistance values.

[0062] By adopting this technical solution, the historical resistance change rate, fluctuation value and amplitude calculated by using the historical resistance value and its resistance-related data can more accurately reflect the change trend of the resistance value over time and its response characteristics to the ambient temperature. Secondly, the coefficients determined based on the historical parameters make it possible to evaluate the influence of different factors on the resistance change in the subsequent calculation, thereby improving the accuracy of the resistance state detection.

[0063] S120. Obtain second resistance-related data of the target resistance at the second moment, determine a circuit state parameter according to the second resistance-related data, and determine a resistance warning threshold at the second moment according to the first resistance value, the resistance change rate, and the circuit state parameter; wherein the second resistance-related data includes at least one of ambient temperature data, current data, voltage data, power data, and resistance material data.

[0064] Among them, the second resistance-related data can be understood as data of various physical conditions related to the resistance obtained at the second moment. The second resistance-related data includes but is not limited to at least one of ambient temperature data, current data, voltage data, power data and resistance material data, etc., which is used to evaluate the state of the resistance. The circuit state parameter can be understood as a set of parameters reflecting the current operating status of the circuit. The circuit state parameter can be used to assist in determining whether the target resistance in the circuit is working properly, which is of great significance for maintaining circuit stability.

[0065] S130: Obtain a second resistance value of the target resistance at the second moment, and when the second resistance value exceeds the resistance warning threshold, determine that the target resistance is in an abnormal state.

[0066] Among them, the second resistance value can be understood as the resistance value of the target resistance measured at the second moment. The second resistance value can be compared with the resistance warning threshold to determine whether the working state of the target resistance is normal. The resistance warning threshold can be understood as the resistance value limit determined according to the first resistance value, the resistance change rate and the circuit state parameters, and if it exceeds the resistance value limit, it is considered that the target resistance may be in an abnormal state. The abnormal state can be understood as a situation where the resistance value deviates from the normal working resistance range. The identification of the abnormal state helps to prevent potential resistance failures and ensure the safe operation of the circuit.

[0067] The technical solution of the embodiment of the present invention is as follows: first, by obtaining the first resistance value and the first resistance-related data of the target resistor in the circuit at multiple first moments within a preset time period, the resistance change rate at the second moment is determined according to the first resistance value and the first resistance-related data; since the first resistance-related data at least includes the ambient temperature data, the second moment is later than the first moment, the resistance change rate can be determined, and the influence of the ambient temperature can be considered to improve the accuracy and reliability of long-term detection and prediction of circuit performance; then, by obtaining the second resistance-related data of the target resistor at the second moment, the circuit state parameters are determined according to the second resistance-related data, and the resistance warning threshold at the second moment is determined according to the first resistance value, the resistance change rate and the circuit state parameters; since the The second resistance-related data includes at least one of ambient temperature data, current data, voltage data, power data and resistance material data. The circuit state parameters can be determined through multi-dimensional data, and the resistance warning threshold can be determined in combination with the resistance change rate to improve the accuracy of the resistance warning. Finally, by obtaining the second resistance value of the target resistance at the second moment, when the second resistance value exceeds the resistance warning threshold, the target resistance is determined to be in an abnormal state. The resistance state can be detected, the anomaly can be quickly identified, and circuit failures can be effectively prevented. This solves the problem that the related technology cannot fully consider the impact of environmental and electrical factors on resistance, resulting in inaccurate anomaly detection. It not only improves the accuracy of judging the abnormal state of the resistance, but also provides data support for preventive maintenance, thereby effectively reducing the risk of circuit system failure.

[0068] Embodiment 2

[0069] Figure 2A flowchart of a resistance testing method provided for the second embodiment of the present invention, this embodiment is based on the relationship between the above embodiments, and further defines how to determine the circuit state parameter according to the second resistance-related data. Optionally, the circuit state parameter includes at least one of a temperature correction coefficient, a current correction coefficient, a voltage correction coefficient, a power correction coefficient and a resistance material correction coefficient, and the circuit state parameter is determined according to the second resistance-related data, including at least one of the following operations: determining the temperature correction coefficient according to the ambient temperature data at the first moment, the ambient temperature data at the second moment and the temperature change influence coefficient, wherein the temperature change influence coefficient is used to characterize the resistance temperature change rate; determining the current correction coefficient according to the current data at the second moment and the current thermal effect coefficient, wherein the current thermal effect coefficient is used to characterize the degree of influence of the resistance value caused by the heat generated by the current; determining the power correction coefficient according to the power data at the second moment and the power influence coefficient, wherein the power influence coefficient is used to characterize the degree of influence of the power on the resistance; determining the resistance material correction coefficient according to the thermal conductivity, specific heat capacity and mechanical stress influence coefficient of the resistance material, wherein the mechanical stress influence coefficient is used to characterize the degree of influence of mechanical stress on the performance of the resistance material. For specific implementation methods, please refer to the description of this embodiment. Among them, the technical features that are the same or similar to the above-mentioned embodiments are not repeated here.

[0070] like Figure 2 As shown, the method may specifically include:

[0071] S210, obtaining first resistance values ​​and first resistance-related data of a target resistor in a circuit at multiple first moments within a preset time period, and determining a resistance change rate at a second moment according to the first resistance values ​​and the first resistance-related data; wherein the first resistance-related data at least includes ambient temperature data, and the second moment is later than the first moment.

[0072] S220, obtaining second resistance-related data of the target resistance at the second moment, wherein the second resistance-related data includes at least one of ambient temperature data, current data, voltage data, power data, and resistance material data.

[0073] S230, determining the temperature correction coefficient according to the ambient temperature data at the first moment, the ambient temperature data at the second moment, and a temperature change influence coefficient, wherein the temperature change influence coefficient is used to characterize a temperature change rate of a resistor.

[0074] The temperature change influence coefficient can be understood as a coefficient used to quantify the speed of the influence of temperature change on the resistance value. The temperature correction coefficient can be understood as a coefficient used to correct the deviation of the resistance value caused by temperature change. The temperature correction coefficient adjusts the resistance measurement value by considering the change of ambient temperature.

[0075] In an optional implementation manner, the temperature correction coefficient is determined according to the ambient temperature data at the first moment, the ambient temperature data at the second moment, and the temperature change influence coefficient, and can be determined based on the following formula:

[0076] f(T)=1+α(T-T0)+τ;

[0077] Wherein, f(T) represents the temperature correction coefficient, α is the adjustment constant within the temperature range, T represents the ambient temperature data at the second moment, T0 represents the average ambient temperature data at the first moment, and τ represents the temperature change influence coefficient.

[0078] On the basis of the above solution, optionally, the temperature change influence coefficient may be determined based on the following formula:

[0079]

[0080] Where τ is the temperature change influence coefficient, is the rate of change of ambient temperature data within the preset time period, K dT is the coefficient of the rate of temperature change.

[0081] By adopting this technical solution, the temperature change influence coefficient is calculated based on the formula. By quantifying the impact of ambient temperature changes on resistance, the degree of influence of temperature fluctuations on circuit stability can be accurately determined.

[0082] S240, determining the current correction coefficient according to the current data at the second moment and the current thermal effect coefficient, wherein the current thermal effect coefficient is used to characterize the influence of the change in resistance value caused by the heat generated by the current.

[0083] Among them, the current thermal effect coefficient can be understood as the coefficient of the degree of change in resistance value caused by the heat generated when the current passes through the target resistor, so as to characterize the degree of influence of the resistance value change caused by the heat generated by the current. The current correction coefficient can be understood as a coefficient used to correct the influence of the resistance value caused by the heat generated by the current passing through the resistor. The current correction coefficient can be based on the influence of the thermal effect of the current on the resistor to ensure that the accuracy of the resistance value is not disturbed by the temperature rise caused by the current.

[0084] In an optional implementation manner, the current correction coefficient is determined according to the current data at the second moment and the current thermal effect coefficient, and can be determined based on the following formula:

[0085] g(I)=1+σI 2 ;

[0086] Wherein, g(I) represents the current correction coefficient, σ represents the current thermal effect coefficient, and I represents the current data at the second moment.

[0087] Based on the above scheme, optionally, the current thermal effect coefficient can be determined in the following manner: obtaining the target resistance aging degree, the first coefficient and the second coefficient, and determining the current thermal effect coefficient according to the current data, the target resistance aging degree, the first coefficient and the second coefficient.

[0088] Among them, the aging degree can be understood as the degree to which the performance of the target resistor is degraded due to various factors (such as temperature, current or usage time, etc.) during its service life. The aging degree is used to evaluate the changes in the target resistor due to aging, and can determine how the resistor responds to the thermal effect of the current. The higher the aging degree, the more susceptible the target resistor may be to the heating of the current. The first coefficient can be understood as being used to characterize the degree of influence of the heat generated by the current on the change of resistance. The second coefficient can be understood as being used to characterize the degree of influence of the aging degree on the heating of the current on the change of resistance.

[0089] In an optional implementation manner, the current thermal effect coefficient is determined according to the current data, the target resistance aging degree, the first coefficient and the second coefficient, and can be determined based on the following formula:

[0090]

[0091] Among them, σ represents the current thermal effect coefficient, I represents the current data at the second moment, k1 represents the first coefficient, k2 is the coefficient related to the effect of current heating on resistance due to the aging degree, and J represents the aging degree of the target resistance.

[0092] By adopting this technical solution, the aging degree and current data of the target resistor are comprehensively analyzed, and the current thermal effect coefficient is determined by combining the first coefficient and the second coefficient. This can accurately evaluate the influence of the current thermal effect on the resistor, which not only helps to more accurately predict the influence of the temperature rise of the resistor caused by the current and its aging rate on the resistance value.

[0093] S250, determining the voltage correction coefficient according to the voltage data at the second moment and the voltage thermal effect coefficient, wherein the voltage thermal effect coefficient is used to characterize the degree of influence of the change in resistance value caused by heat generated by the voltage.

[0094] Among them, the voltage thermal effect coefficient can be understood as the coefficient of the degree of change in resistance value caused by the heat generated by the voltage applied to the target resistor, so as to characterize the degree of influence of the voltage generating heat on the change in resistance value. The voltage correction coefficient can be understood as a coefficient used to correct the effect of the target resistor on its resistance value due to the heat generated by the voltage applied. The voltage correction coefficient can be based on the influence of the voltage thermal effect on the resistor to ensure that the accuracy of the resistance value is not disturbed by the temperature rise caused by the voltage.

[0095] In an optional implementation manner, the voltage correction coefficient is determined according to the voltage data at the second moment and the voltage thermal effect coefficient, and can be determined based on the following formula:

[0096] h(U)=1+γU 2 ;

[0097] Among them, h(U) represents the voltage correction coefficient, γ represents the voltage thermal effect coefficient, and U represents the voltage data at the second moment.

[0098] S260. Determine the power correction factor according to the power data at the second moment and the power influence coefficient, wherein the power influence coefficient is used to characterize the influence degree of power on resistance.

[0099] The power influence coefficient can be understood as a coefficient of the influence of power on resistance, which is used to characterize the influence of power on resistance, so as to evaluate the influence of power consumption on the performance of resistance. The power correction coefficient can be understood as a coefficient used to compensate for the change in resistance performance caused by power consumption. The power correction coefficient ensures that the accuracy of the resistance value is not disturbed by power changes based on the influence of power loss on the resistance material.

[0100] In an optional implementation manner, the power correction coefficient is determined according to the power data at the second moment and the power influence coefficient, and can be determined based on the following formula:

[0101] m(P)=1+δP;

[0102] Wherein, m(P) represents the power correction coefficient, δ represents the voltage thermal effect coefficient, and P represents the power data at the second moment.

[0103] S270. Determine the resistor material correction coefficient according to the thermal conductivity, specific heat capacity and mechanical stress influence coefficient of the resistor material, wherein the mechanical stress influence coefficient is used to characterize the influence degree of mechanical stress on the performance of the resistor material.

[0104] Among them, the thermal conductivity can be understood as a physical quantity used to characterize the ability of a resistor material to conduct heat. The specific heat capacity can be understood as the energy required for a resistor per unit mass to increase a unit temperature. The specific heat capacity is related to the resistor material correction coefficient, which affects the speed and degree of temperature rise of the resistor material and indirectly affects the resistance value. The mechanical stress influence coefficient can be understood as a coefficient used to describe the degree of influence of mechanical stress on the performance of the resistor material. The mechanical stress influence coefficient can ensure the accuracy of the resistance value by changing the properties of the resistor material under the action of external mechanical stress.

[0105] In an optional implementation manner, the resistor material correction coefficient is determined according to the thermal conductivity, specific heat capacity and mechanical stress influence coefficient of the resistor material, and can be determined based on the following formula:

[0106] b(L)=(K k k+K c C)×(1+K3×S);

[0107] Among them, K k Represents the thermal conductivity coefficient of the resistor material, K c represents the specific heat capacity coefficient of the resistor material, k represents the thermal conductivity of the resistor material, C represents the specific heat capacity of the resistor material, K3 represents the mechanical stress influence coefficient, and S represents the mechanical stress.

[0108] S280. Determine the resistance warning threshold at the second moment according to the first resistance value, the resistance change rate and the circuit state parameter; wherein the circuit state parameter includes at least one of a temperature correction coefficient, a current correction coefficient, a voltage correction coefficient, a power correction coefficient and a resistance material correction coefficient.

[0109] On the basis of the above solution, optionally, the resistance warning threshold at the second moment may be determined according to the first resistance value, the resistance change rate and the circuit state parameter based on the following formula:

[0110] R th2 =R1×(1+r×f(T)×g(I)×h(U)×m(P)×b(L));

[0111] Among them, R th2 is the resistance warning threshold, R1 is the first resistance value, r is the resistance change rate, f(T) is the temperature correction coefficient, g(I) is the current correction coefficient, h(U) is the voltage correction coefficient, m(P) is the power correction coefficient, and b(L) is the resistance material correction coefficient.

[0112] By adopting this technical solution, the resistance warning threshold is calculated through a formula, which comprehensively considers the influence of the first resistance value, the resistance change rate and various circuit state parameters, so that the determination of the resistance warning threshold is more accurate, which can effectively improve the recognition accuracy of abnormal resistance status and prevent failures caused by environmental or electrical factors.

[0113] S290: Obtain a second resistance value of the target resistance at the second moment, and when the second resistance value exceeds the resistance warning threshold, determine that the target resistance is in an abnormal state.

[0114] The technical solution of the embodiment of the present invention determines the temperature correction coefficient based on the ambient temperature data and the temperature change influence coefficient, which can effectively quantify the influence of temperature change on the resistor and improve the reliability evaluation accuracy at different working temperatures; secondly, the current correction coefficient is determined based on the current data and the current thermal effect coefficient, which helps to accurately predict the change in resistance value caused by the current and prevent the risk of overheating; in addition, the power correction coefficient is determined using the power data and the power influence coefficient, which further considers the influence of power fluctuations on the resistor performance; by analyzing the characteristics of the resistor material and the degree to which it is affected by mechanical stress to determine the resistor material correction coefficient, it ensures that the early warning of material aging and potential failures is more scientific and reasonable, improves the accuracy of resistor anomaly detection, reduces the failure rate of the circuit system, and enhances the overall stability and safety of the circuit.

[0115] Embodiment 3

[0116] Figure 3 This is a schematic diagram of the structure of a resistance testing device provided in Embodiment 3 of the present invention. Figure 3 As shown, the device includes: a resistance change rate determination module 310, a resistance warning threshold determination module 320 and a resistance state determination module 330.

[0117] A resistance change rate determination module 310 is used to obtain the first resistance value and first resistance-related data of a target resistor in a circuit at multiple first moments within a preset time period, and determine the resistance change rate at a second moment according to the first resistance value and the first resistance-related data; wherein the first resistance-related data at least includes ambient temperature data, and the second moment is later than the first moment; a resistance warning threshold determination module 320 is used to obtain the second resistance-related data of the target resistor at the second moment, determine the circuit state parameters according to the second resistance-related data, and determine the resistance warning threshold at the second moment according to the first resistance value, the resistance change rate and the circuit state parameters; wherein the second resistance-related data includes at least one of ambient temperature data, current data, voltage data, power data and resistance material data; a state determination module 330 is used to obtain the second resistance value of the target resistor at the second moment, and determine that the target resistor is in an abnormal state when the second resistance value exceeds the resistance warning threshold.

[0118] The technical solution of the embodiment of the present invention is as follows: first, a first resistance value and first resistance-related data of a target resistance in a circuit at a plurality of first moments within a preset time period are obtained through a resistance change rate determination module 310, and a resistance change rate at a second moment is determined according to the first resistance value and the first resistance-related data; since the first resistance-related data at least includes ambient temperature data, the second moment is later than the first moment, the resistance change rate can be determined, and the influence of ambient temperature can be considered to improve the accuracy and reliability of long-term detection and prediction of circuit performance; then, the second resistance-related data of the target resistance at the second moment is obtained through a resistance early warning threshold determination module 320, a circuit state parameter is determined according to the second resistance-related data, and a resistance early warning threshold at the second moment is determined according to the first resistance value, the resistance change rate and the circuit state parameter. Warning threshold, since the second resistance-related data includes at least one of ambient temperature data, current data, voltage data, power data and resistance material data, the circuit state parameters can be determined through multi-dimensional data, and the resistance warning threshold can be determined in combination with the resistance change rate, thereby improving the resistance warning accuracy; finally, the second resistance value of the target resistance at the second moment is obtained through the state determination module 330, and when the second resistance value exceeds the resistance warning threshold, the target resistance is determined to be in an abnormal state, the resistance state can be detected, the abnormality can be quickly identified, and circuit failures can be effectively prevented, which solves the problem that the related technology cannot fully consider the influence of environmental and electrical factors on resistance, resulting in inaccurate abnormality detection, which not only improves the accuracy of judging the abnormal state of resistance, but also provides data support for preventive maintenance, thereby effectively reducing the risk of circuit system failure

[0119] On the basis of the above scheme, optionally, the resistance change rate determination module is specifically used to: determine the ambient temperature characteristics according to the number of the first resistance value at the first moment, the first moment and the ambient temperature data, and determine the maximum value, minimum value and average value of the first resistance value within a preset time period according to the first moment and the first resistance value; determine the resistance value fluctuation value according to the maximum value, the minimum value, the average value and the first resistance value, and perform Fourier transform on the first resistance value at the first moment to obtain the amplitude of the first resistance value; perform weighted summation on the ambient temperature characteristics, the resistance value fluctuation value and the two maximum values ​​of the amplitude to obtain the resistance change rate at the second moment.

[0120] On the basis of the above scheme, optionally, the circuit state parameter includes at least one of a temperature correction coefficient, a current correction coefficient, a voltage correction coefficient, a power correction coefficient and a resistance material correction coefficient, and the resistance warning threshold determination module includes: a circuit state parameter determination submodule. Wherein, the circuit state parameter determination submodule is used to: determine the temperature correction coefficient according to the ambient temperature data at the first moment, the ambient temperature data at the second moment and the temperature change influence coefficient, wherein the temperature change influence coefficient is used to characterize the resistance temperature change rate; determine the current correction coefficient according to the current data at the second moment and the current thermal effect coefficient, wherein the current thermal effect coefficient is used to characterize the degree of influence of the resistance value change caused by the heat generated by the current; determine the voltage correction coefficient according to the voltage data at the second moment and the voltage thermal effect coefficient, wherein the voltage thermal effect coefficient is used to characterize the degree of influence of the resistance value change caused by the heat generated by the voltage; determine the power correction coefficient according to the power data at the second moment and the power influence coefficient, wherein the power influence coefficient is used to characterize the degree of influence of the power on the resistance; determine the resistance material correction coefficient according to the thermal conductivity, specific heat capacity and mechanical stress influence coefficient of the resistance material, wherein the mechanical stress influence coefficient is used to characterize the degree of influence of mechanical stress on the performance of the resistance material.

[0121] On the basis of the above solution, optionally, the resistance warning threshold at the second moment is determined according to the first resistance value, the resistance change rate and the circuit state parameter based on the following formula:

[0122] R th2 =R1×(1+r'×f(T)×g(I)×h(U)×m(P)×b(L));

[0123] Among them, R th2is the resistance warning threshold, R1 is the first resistance value, r' is the resistance change rate, f(T) is the temperature correction coefficient, g(I) is the current correction coefficient, h(U) is the voltage correction coefficient, m(P) is the power correction coefficient, and b(L) is the resistance material correction coefficient.

[0124] On the basis of the above solution, optionally, the temperature change influence coefficient is determined based on the following formula:

[0125]

[0126] Where τ is the temperature change influence coefficient, is the rate of change of ambient temperature data within the preset time period, K dT is the coefficient of the rate of temperature change.

[0127] Based on the above solution, optionally, the current thermal effect coefficient is determined in the following manner:

[0128] Obtain the target resistance aging degree, the first coefficient and the second coefficient, and determine the current thermal effect coefficient according to the current data, the target resistance aging degree, the first coefficient and the second coefficient; wherein the first coefficient is used to characterize the influence of the heat generated by the current on the resistance change, and the second coefficient is used to characterize the influence of the aging degree on the current heating on the resistance change.

[0129] On the basis of the above scheme, optionally, the resistance testing device further includes: a third resistance-related data acquisition module, a historical environmental temperature feature determination module and a weight coefficient determination module. The third resistance-related data acquisition module is used to acquire the third resistance value and third resistance-related data of the target resistance in the circuit at multiple third moments in a historical time period before acquiring the first resistance value and first resistance-related data of the target resistance in the circuit at multiple first moments in a preset time period, wherein the third resistance-related data at least includes historical environmental temperature data; the historical environmental temperature feature determination module is used to determine the historical resistance change rate, historical resistance value fluctuation value and historical amplitude according to the third resistance value, and determine the historical environmental temperature characteristics according to the historical environmental temperature data; the weight coefficient determination module is used to determine the weight coefficient related to the resistance value fluctuation value, environmental temperature characteristics and amplitude in the resistance change rate according to the historical resistance change rate, historical resistance value fluctuation value, historical environmental temperature characteristics and historical amplitude.

[0130] The resistance testing device provided in the embodiment of the present invention can execute the resistance testing method provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method.

[0131] Example 4

[0132] Figure 4 A schematic diagram of the structure of an electronic device 10 that can be used to implement an embodiment of the present invention is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or required herein.

[0133] like Figure 4 As shown, the electronic device 10 includes at least one processor 11, and a memory connected to the at least one processor 11, such as a read-only memory (ROM) 12, a random access memory (RAM) 13, etc., wherein the memory stores a computer program that can be executed by at least one processor, and the processor 11 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 12 or the computer program loaded from the storage unit 18 to the random access memory (RAM) 13. In the RAM 13, various programs and data required for the operation of the electronic device 10 can also be stored. The processor 11, the ROM 12, and the RAM 13 are connected to each other through a bus 14. An input / output (I / O) interface 15 is also connected to the bus 14.

[0134] A number of components in the electronic device 10 are connected to the I / O interface 15, including: an input unit 16, such as a keyboard, a mouse, etc.; an output unit 17, such as various types of displays, speakers, etc.; a storage unit 18, such as a disk, an optical disk, etc.; and a communication unit 19, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 19 allows the electronic device 10 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0135] The processor 11 may be a variety of general and / or special processing components with processing and computing capabilities. Some examples of the processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 11 performs the various methods and processes described above, such as a resistance testing method.

[0136] In some embodiments, the resistance testing method may be implemented as a computer program, which is tangibly contained in a computer-readable storage medium, such as a storage unit 18. In some embodiments, part or all of the computer program may be loaded and / or installed on the electronic device 10 via the ROM 12 and / or the communication unit 19. When the computer program is loaded into the RAM 13 and executed by the processor 11, one or more steps of a resistance testing method described above may be performed. Alternatively, in other embodiments, the processor 11 may be configured to perform a resistance testing method in any other appropriate manner (e.g., by means of firmware).

[0137] Various implementations of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various implementations can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a special purpose or general purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0138] Computer programs for implementing the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that when the computer program is executed by the processor, the functions / operations specified in the flow chart and / or block diagram are implemented. The computer program may be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0139] In the context of the present invention, a computer-readable storage medium may be a tangible medium that may contain or store a computer program for use by or in combination with an instruction execution system, device or equipment. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices or equipment, or any suitable combination of the foregoing. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0140] To provide interaction with a user, the systems and techniques described herein may be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or trackball) through which the user can provide input to the electronic device. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0141] The systems and techniques described herein may be implemented in a computing system that includes backend components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes frontend components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such backend components, middleware components, or frontend components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0142] A computing system may include a client and a server. The client and the server are generally remote from each other and usually interact through a communication network. The client and server relationship is generated by computer programs running on the corresponding computers and having a client-server relationship with each other. The server may be a cloud server, also known as a cloud computing server or cloud host, which is a host product in the cloud computing service system to solve the defects of difficult management and weak business scalability in traditional physical hosts and VPS services.

[0143] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0144] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A resistance testing method, characterized in that: include: Obtaining first resistance values ​​and first resistance-related data of a target resistor in a circuit at multiple first moments within a preset time period, and determining a resistance change rate at a second moment according to the first resistance values ​​and the first resistance-related data; wherein the first resistance-related data at least includes ambient temperature data, and the second moment is later than the first moment; Acquire second resistance-related data of the target resistance at the second moment, determine a circuit state parameter according to the second resistance-related data, and determine a resistance warning threshold at the second moment according to the first resistance value, the resistance change rate, and the circuit state parameter; wherein the second resistance-related data includes at least one of ambient temperature data, current data, voltage data, power data, and resistance material data; A second resistance value of the target resistance at the second moment is acquired, and when the second resistance value exceeds the resistance warning threshold, it is determined that the target resistance is in an abnormal state.

2. The method according to claim 1, characterized in that The determining the resistance change rate at the second moment according to the first resistance value and the first resistance associated data includes: Determine the ambient temperature characteristic according to the number of first moments of the first resistance value, the first moment and ambient temperature data, and determine the maximum value, the minimum value and the average value of the first resistance value within a preset time period according to the first moment and the first resistance value; determining a resistance fluctuation value according to the maximum value, the minimum value, the average value, and the first resistance value, and performing Fourier transform on the first resistance value at the first moment to obtain an amplitude of the first resistance value; The environmental temperature characteristic, the resistance value fluctuation value and two maximum values ​​of the amplitude are weightedly summed to obtain the resistance change rate at the second moment.

3. The method according to claim 1, characterized in that The circuit state parameter includes at least one of a temperature correction factor, a current correction factor, a voltage correction factor, a power correction factor, and a resistance material correction factor, and the determining of the circuit state parameter according to the second resistance-related data includes at least one of the following operations: Determine the temperature correction coefficient according to the ambient temperature data at the first moment, the ambient temperature data at the second moment, and a temperature change influence coefficient, wherein the temperature change influence coefficient is used to characterize the temperature change rate of the resistor; Determine the current correction coefficient according to the current data at the second moment and the current thermal effect coefficient, wherein the current thermal effect coefficient is used to characterize the influence degree of the resistance value change caused by the heat generated by the current; Determine the voltage correction coefficient according to the voltage data at the second moment and the voltage thermal effect coefficient, wherein the voltage thermal effect coefficient is used to characterize the influence degree of the change of the resistance value caused by the heat generated by the voltage; Determining the power correction coefficient according to the power data at the second moment and the power influence coefficient, wherein the power influence coefficient is used to characterize the influence degree of power on resistance; The resistor material correction factor is determined according to the thermal conductivity, specific heat capacity and mechanical stress influence coefficient of the resistor material, wherein the mechanical stress influence coefficient is used to characterize the influence degree of mechanical stress on the performance of the resistor material.

4. The method according to claim 3, characterized in that The resistance warning threshold at the second moment is determined according to the first resistance value, the resistance change rate, and the circuit state parameter based on the following formula: R th2 =R1×(1+r'×f(T)×g(I)×h(U)×m(P)×b(L)); Among them, R th2 is the resistance warning threshold, R1 is the first resistance value, r' is the resistance change rate, f(T) is the temperature correction coefficient, g(I) is the current correction coefficient, h(U) is the voltage correction coefficient, m(P) is the power correction coefficient, and b(L) is the resistance material correction coefficient.

5. The method according to claim 3, characterized in that: The temperature change influence coefficient is determined based on the following formula: Where τ is the temperature change influence coefficient, is the rate of change of ambient temperature data within the preset time period, K dT is the coefficient of the rate of temperature change.

6. The method according to claim 3, characterized in that The current thermal effect coefficient is determined as follows: Obtain the target resistance aging degree, the first coefficient and the second coefficient, and determine the current thermal effect coefficient according to the current data, the target resistance aging degree, the first coefficient and the second coefficient; wherein the first coefficient is used to characterize the influence of the heat generated by the current on the resistance change, and the second coefficient is used to characterize the influence of the aging degree on the current heating on the resistance change.

7. The method according to claim 1, characterized in that Before acquiring the first resistance values ​​and first resistance associated data of the target resistance in the circuit at a plurality of first moments within a preset time period, the method further includes: Acquire third resistance values ​​and third resistance-related data of a target resistor in a circuit at multiple third moments in a historical time period, wherein the third resistance-related data at least includes historical ambient temperature data; Determine a historical resistance change rate, a historical resistance fluctuation value and a historical amplitude according to the third resistance value, and determine a historical ambient temperature characteristic according to the historical ambient temperature data; The weight coefficients related to the resistance value fluctuation value, the environmental temperature characteristics and the amplitude in the resistance change rate are determined according to the historical resistance change rate, the historical resistance value fluctuation value, the historical environmental temperature characteristics and the historical amplitude.

8. A resistance testing device, characterized in that: include: a resistance change rate determination module, configured to obtain first resistance values ​​and first resistance-related data of a target resistance in a circuit at a plurality of first moments within a preset time period, and determine the resistance change rate at a second moment according to the first resistance values ​​and the first resistance-related data; wherein the first resistance-related data at least includes ambient temperature data, and the second moment is later than the first moment; a resistance warning threshold determination module, configured to obtain second resistance associated data of the target resistance at the second moment, determine a circuit state parameter according to the second resistance associated data, and determine a resistance warning threshold at the second moment according to the first resistance value, the resistance change rate, and the circuit state parameter; wherein the second resistance associated data includes at least one of ambient temperature data, current data, voltage data, power data, and resistance material data; The resistance state determination module is used to obtain a second resistance value of the target resistance at the second moment, and determine that the target resistance is in an abnormal state when the second resistance value exceeds the resistance warning threshold.

9. An electronic device, characterized in that: include: at least one processor; as well as a memory communicatively connected to the at least one processor; wherein, The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor performs the resistance testing method according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to implement the resistance testing method as described in any one of claims 1 to 7 when executed.

Images