Light-emitting device capable of improving lateral light emitting, display module and display device

Abstract

The invention provides a light-emitting device for improving lateral light emitting, a display module and a display device, and belongs to the technical field of photoelectron manufacturing. The light-emitting device comprises a light-emitting substrate, a bonding layer and a plurality of monochromatic light-emitting structures, the light-emitting substrate is provided with a first surface and a second surface which are opposite, the bonding layer is located on the second surface, and the monochromatic light-emitting structures are arranged on the surface, away from the light-emitting substrate, of the bonding layer at intervals; the first surface is provided with a plurality of protrusion structures arranged at intervals, and each protrusion structure comprises a light transmitting layer and a reflecting layer which are sequentially stacked in the direction away from the light emitting substrate. The problem that the light emitting intensity of lateral light emitting of the light emitting device is weak can be solved, and the display effect of the light emitting device is improved.

Description

Technical Field

[0001] The present disclosure relates to the field of optoelectronic manufacturing technology, and in particular to a light-emitting device, a display module and a display apparatus for improving lateral light emission. Background Art

[0002] The three-primary-color light-emitting device is an electronic component that uses the three-primary-color principle to make the light-emitting diode emit light of different colors. The light-emitting device has the characteristics of self-luminescence, high brightness, high contrast, high responsiveness and power saving.

[0003] In the related art, a light-emitting device generally includes a substrate and a plurality of monochromatic light-emitting structures spaced apart on the substrate, and the light-emitting colors of the monochromatic light-emitting structures generally include red light, green light and blue light.

[0004] However, the light intensity of the light emitting device is relatively strong in the direction perpendicular to the substrate, while the light intensity of the light emitted laterally is significantly reduced, resulting in weak light emission on the side of the light emitting device, which limits the viewing angle of the light emitting device. Summary of the invention

[0005] The embodiments of the present disclosure provide a light emitting device, a display module and a display device for improving lateral light emission, which can improve the problem of weak lateral light emission intensity of the light emitting device and enhance the display effect of the light emitting device. The technical solution is as follows:

[0006] An embodiment of the present disclosure provides a light-emitting device, which includes: a light-emitting substrate, a bonding layer and a plurality of monochromatic light-emitting structures, wherein the light-emitting substrate has a first surface and a second surface opposite to each other, the bonding layer is located on the second surface, and the plurality of monochromatic light-emitting structures are arranged at intervals on the surface of the bonding layer away from the light-emitting substrate; the first surface has a plurality of convex structures arranged at intervals, and the convex structures include a light-transmitting layer and a reflective layer stacked in sequence in a direction away from the light-emitting substrate.

[0007] In another implementation of the embodiment of the present disclosure, the surface of the light-transmitting layer away from the light-emitting substrate is an inclined surface, the inclined surface has a non-zero angle with the first surface, the inclined surface faces the geometric center of the first surface, and the reflective layer is located on the inclined surface.

[0008] In another implementation of the embodiment of the present disclosure, the reflective layer includes a plurality of first material layers and a plurality of second material layers alternately stacked, and the first material layers and the second material layers have different refractive indices; or, the reflective layer includes a metal layer.

[0009] In another implementation of the embodiment of the present disclosure, the protruding structure is arranged in an edge area of ​​the first surface, and the edge area surrounds a geometric center of the first surface.

[0010] In another implementation of the embodiment of the present disclosure, at most a portion of the orthographic projection of the protruding structure on the first surface intersects with the orthographic projection of the monochromatic light-emitting structure on the first surface.

[0011] In another implementation of the embodiment of the present disclosure, the light-emitting device also includes a light absorbing layer and a passivation layer, the light absorbing layer is located on the surface of the bonding layer away from the light emitting substrate and at least surrounds the side walls of each of the monochromatic light-emitting structures, and the passivation layer is located on the surface of the light absorbing layer away from the light emitting substrate.

[0012] In another implementation of the embodiment of the present disclosure, the light absorbing layer includes an insulating material layer and a black filler located in the insulating material layer, and the density of the black filler in the insulating material layer close to the monochromatic light-emitting structure is greater than the density of the black filler in the insulating material layer far from the monochromatic light-emitting structure.

[0013] In another implementation of the embodiment of the present disclosure, the passivation layer has a first via hole exposing each of the monochromatic light-emitting structures; the light-emitting device also includes a metal trace, a reflective layer and a metal connection layer, the reflective layer is located in the first via hole, the reflective layer has a second via hole penetrating the reflective layer, the metal trace is located on the surface of the passivation layer away from the light-emitting substrate and covers the reflective layer, the metal trace is electrically connected to the monochromatic light-emitting structure through the second via hole; the metal connection layer is located in the first via hole and is electrically connected to the monochromatic light-emitting structure, the reflective layer covers the metal connection layer, the second via hole exposes the metal connection layer, the metal trace is connected to the metal connection layer through the second via hole, and the absorbance of the metal connection layer is less than the absorbance of the metal trace.

[0014] An embodiment of the present disclosure provides a display module, which includes a plurality of light-emitting devices, a circuit board, and a driver integrated circuit as described above, wherein the plurality of light-emitting devices and the driver integrated circuit are both located on the circuit board.

[0015] An embodiment of the present disclosure provides a display device, which includes a plurality of display modules and a base plate as described above, wherein the plurality of display modules are located on a surface of the base plate.

[0016] The beneficial effects brought by the technical solution provided by the embodiments of the present disclosure include at least:

[0017] The light-emitting device provided by the embodiment of the present disclosure is provided with a plurality of spaced-apart convex structures on the first surface of the light-emitting substrate away from the monochromatic light-emitting structure. The convex structure includes a light-transmitting layer and a reflective layer stacked in sequence in a direction away from the light-emitting substrate. When light is emitted from the monochromatic light-emitting structure to the first surface of the light-emitting substrate, part of the light will be incident on the convex structure, pass through the light-transmitting layer and then be incident on the reflective layer, and be reflected at the reflective layer, thereby changing the angle of part of the emitted light, so that part of the light can be emitted obliquely. Compared with directly setting a reflective layer on the first surface of the light-emitting substrate, the light is directly reflected back to the light-emitting substrate at the reflective layer; a light-transmitting layer is also set between the reflective layer and the light-emitting substrate, so that the light can be emitted from the light-emitting substrate and then reflected by the reflective layer. Since part of the light is no longer emitted in the direction perpendicular to the original light-emitting substrate, but is reflected to other directions at the reflective layer, the light-emitting direction of part of the light can be changed, so that part of the light can be emitted obliquely. That is, the light is emitted from the light-emitting device and then reflected to other directions, which is conducive to allowing more light to be emitted obliquely, increasing the luminous intensity of the lateral light emitted by the light-emitting device, and improving the display effect of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 is a top view of a light emitting device provided by an embodiment of the present disclosure;

[0020] Figure 2 yes Figure 1 A schematic diagram of an AA cross section is provided;

[0021] Figure 3 is a bottom view of a light emitting device provided by an embodiment of the present disclosure;

[0022] Figure 4 is a schematic structural diagram of another light-emitting device provided by an embodiment of the present disclosure;

[0023] Figure 5 yes Figure 1 A schematic diagram of a BB cross section is provided;

[0024] Figure 6 is a schematic structural diagram of another light-emitting device provided by an embodiment of the present disclosure;

[0025] Figure 7 is a top view of a display module provided by an embodiment of the present disclosure;

[0026] Figure 8 is a cross-sectional view of a display module provided by an embodiment of the present disclosure;

[0027] Fig. 9 It is a schematic diagram of a display device provided by an embodiment of the present disclosure.

[0028] The descriptions of the marks in the figure are as follows:

[0029] 10. Light emitting substrate; 11. First surface; 12. Second surface;

[0030] 100, protruding structure; 110, light-transmitting layer; 120, reflecting layer; 121, first material layer; 122, second material layer;

[0031] 20. Adhesive layer;

[0032] 30. light absorbing layer; 31. insulating material layer; 32. black filler;

[0033] 40. passivation layer; 41. first via hole;

[0034] 50. Monochromatic light emitting structure; 51. Red light emitting structure; 52. Green light emitting structure; 53. Blue light emitting structure; 54. First electrode; 55. Second electrode;

[0035] 60. Metal routing;

[0036] 70. reflective layer; 71. second via hole;

[0037] 80. Metal connection layer;

[0038] 90. insulating layer; 95. third via hole;

[0039] 91. First solder pad; 92. Second solder pad; 93. Third solder pad; 94. Fourth solder pad. DETAILED DESCRIPTION

[0040] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0041] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by persons with ordinary skills in the field to which the present disclosure belongs. The words "first", "second", "third" and similar words used in the patent application specification and claims of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "one" do not indicate a quantity limitation, but indicate the existence of at least one. Words such as "include" or "comprise" and similar words mean that the elements or objects appearing before "include" or "comprise" include the elements or objects listed after "include" or "comprise" and their equivalents, and do not exclude other elements or objects. Words such as "connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right", "top", "bottom" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0042] Figure 1 It is a top view of a light-emitting device provided by an embodiment of the present disclosure. Figure 2 yes Figure 1 A schematic diagram of an AA cross section is provided. Figure 1 , 2 As shown, the light-emitting device includes: a light-emitting substrate 10, an adhesive layer 20 and a plurality of monochromatic light-emitting structures 50, the light-emitting substrate 10 has a first surface 11 and a second surface 12 in opposite directions, the adhesive layer 20 is located on the second surface 12, and the plurality of monochromatic light-emitting structures 50 are arranged at intervals on the surface of the adhesive layer 20 away from the light-emitting substrate 10.

[0043] Exemplarily, the plurality of monochromatic light emitting structures 50 are arranged at intervals on the surface of the bonding layer 20 , and do not overlap in a direction perpendicular to the surface of the light output substrate 10 .

[0044] like Figure 2 As shown, the first surface 11 has a plurality of protrusion structures 100 arranged at intervals, and the protrusion structures 100 include a light-transmitting layer 110 and a reflective layer 120 stacked in sequence in a direction away from the light-emitting substrate 10 .

[0045] The light-emitting device provided in the embodiment of the present disclosure is provided with a plurality of convex structures 100 arranged at intervals on the first surface 11 of the light-emitting substrate 10 away from the monochromatic light-emitting structure 50. Among them, the convex structure 100 includes a light-transmitting layer 110 and a reflective layer 120 stacked in sequence in a direction away from the light-emitting substrate 10. When light is emitted from the monochromatic light-emitting structure 50 to the first surface 11 of the light-emitting substrate 10, part of the light will be incident on the convex structure 100, pass through the light-transmitting layer 110 and then be incident on the reflective layer 120, and be reflected at the reflective layer 120, thereby changing the angle of part of the emitted light, so that part of the light can be emitted obliquely. Compared with directly setting the reflective layer 120 on the first surface of the light-emitting substrate 10, the light is directly reflected back to the light-emitting substrate 10 at the reflective layer 120; a light-transmitting layer is also set between the reflective layer 120 and the light-emitting substrate 10, so that the light can be emitted from the light-emitting substrate 10 and then reflected by the reflective layer 120. Since part of the light is no longer emitted in the direction perpendicular to the original light-emitting substrate, but is reflected to other directions at the reflective layer 120, the emission direction of part of the light can be changed, so that part of the light can be emitted obliquely. That is, the light is emitted from the light-emitting device and then reflected to other directions, which is conducive to more light being emitted obliquely, increasing the luminous intensity of the light-emitting device lateral light, and improving the display effect of the light-emitting device.

[0046] Alternatively, if Figure 2 As shown, the surface of the light-transmitting layer 110 away from the light-emitting substrate 10 is an inclined surface, which has a non-zero angle with the first surface 11 , faces the geometric center of the first surface 11 , and the reflective layer 120 is located on the inclined surface.

[0047] By setting the surface of the light-transmitting layer 110 away from the light-emitting substrate 10 as an inclined surface, when the light is emitted vertically from the light-emitting substrate 10, it will be reflected by the reflective layer 120 set on the inclined surface. Figure 2 As shown by the middle arrow, the light emitted vertically from the light emitting substrate 10 will be reflected at the reflective layer 120 in a direction away from the geometric center of the first surface 11, so that more light can be emitted obliquely, thereby increasing the luminous intensity of the lateral light emitted by the light emitting device and improving the display effect of the light emitting device.

[0048] Optionally, the reflective layer 120 includes a plurality of first material layers 121 and a plurality of second material layers 122 that are alternately stacked, and the first material layers 121 and the second material layers 122 have different refractive indices.

[0049] Exemplarily, the first material layer 121 is a silicon oxide layer, and the second material layer 122 is a titanium oxide layer. A distributed Bragg reflector (DBR) layer can be formed by periodically alternating multiple silicon oxide layers and titanium oxide layers. The number of periods of the DBR layer can be between 20 and 50. For example, the number of periods of the DBR layer is 32.

[0050] As an example, the thickness of the silicon oxide layer in the DBR layer may be 80 angstroms to 120 angstroms, and the thickness of the titanium oxide layer may be 50 angstroms to 90 angstroms.

[0051] Optionally, the reflective layer 120 includes a metal layer. The good reflective properties of metal can improve the reflective effect of the reflective layer 120 . Meanwhile, the use of a metal layer to make the reflective layer 120 does not require the preparation of multiple different film layers, thus effectively improving the preparation efficiency of the reflective layer 120 .

[0052] Exemplarily, the reflective layer 120 includes at least one of an Au layer, an Ag layer, and an Al layer.

[0053] Figure 3 is a bottom view of a light emitting device provided by an embodiment of the present disclosure. Figure 3 As shown, the protruding structures 100 are arranged in the edge region of the first surface 11 , and the edge region surrounds the geometric center of the first surface 11 .

[0054] Since the luminous intensity of the middle part of the light-emitting device is relatively strong, it is the main display area of ​​the light-emitting device. In order to avoid the convex structure 100 being set on the light-emitting side of the light-emitting device to affect the luminous effect of the main display area of ​​the light-emitting device, the convex structure 100 is controlled at the edge area to ensure that the light-emitting device has a good display effect, and part of the light in the edge area can be emitted obliquely to increase the amount of oblique light emission, increase the luminous intensity of the lateral light emitted by the light-emitting device, and improve the display effect of the light-emitting device.

[0055] Optionally, the shape of the protruding structure may be at least one of a circle, an ellipse and a polygon.

[0056] For example, Figure 3 As shown, the protruding structure is circular. Since the surface of the protruding structure away from the light emitting substrate is an inclined surface, Figure 3 The shape of the bottom view shown in FIG. 1 is an ellipse.

[0057] Alternatively, if Figure 3 As shown, the protrusion structures on the first surface may be arranged in a circumferentially spaced manner with the geometric center of the first surface as the center.

[0058] It should be noted that the arrangement of the protruding structures may also be other arrangements, as long as the protruding structures are arranged at intervals, and the embodiments of the present disclosure are not limited thereto.

[0059] Exemplarily, the edge region may be an annular region surrounding the geometric center of the first surface 11 .

[0060] Optionally, a ratio of the width of the edge region to the half-width of the first surface 11 is less than or equal to 0.3.

[0061] The width of the edge area is the distance between the outer contour line and the inner contour line of the edge area.

[0062] Exemplarily, when the shape of the edge region is a circular ring, the width of the edge region is the width of the circular ring.

[0063] The half width of the first surface 11 is the distance from the peripheral edge of the first surface 11 to the center line of the first surface 11 .

[0064] Exemplarily, when the light output substrate 10 is a circular plate, the half width of the first surface 11 is the radius of the first surface 11 .

[0065] In the above implementation, controlling the ratio of the width of the edge area to the half-width of the first surface 11 within the above range can avoid the edge area being too wide, which would cause the range of the protruding structure 100 set on the first surface 11 to be too large, occupying a larger area of ​​the first surface 11, and affecting the light-emitting effect of the light-emitting device.

[0066] Exemplarily, the ratio of the width of the edge region to the half width of the first surface 11 may be 0.2.

[0067] Alternatively, if Figure 2 As shown, at most a portion of the orthographic projection of the protruding structure 100 on the first surface intersects with the orthographic projection of the monochromatic light-emitting structure 50 on the first surface 11 .

[0068] In this way, most of the light is arranged in the edge area, and only a small amount of raised structures and the monochrome light-emitting structure are overlapped, so as to avoid more raised structures blocking the light output of the monochrome light-emitting structure. While ensuring that the light-emitting device has a good display effect, part of the light in the edge area can be emitted obliquely to increase the amount of oblique light output, increase the luminous intensity of the lateral light output of the light-emitting device, and improve the display effect of the light-emitting device.

[0069] Alternatively, if Figure 2 As shown, the light emitting device further includes a light absorbing layer 30 and a passivation layer 40. The light absorbing layer 30 is located on the surface of the bonding layer 20 away from the light emitting substrate 10 and at least surrounds the sidewalls of each monochromatic light emitting structure 50.

[0070] like Figure 2As shown, the passivation layer 40 is located on the surface of the light absorbing layer 30 away from the light emitting substrate 10 .

[0071] In the light-emitting device provided by the embodiment of the present disclosure, multiple monochromatic light-emitting structures 50 are fixed on the light-emitting substrate 10 through the adhesive layer 20, which can improve the connection reliability between the monochromatic light-emitting structure 50 and the light-emitting substrate 10. At the same time, multiple monochromatic light-emitting structures 50 are arranged at intervals on the surface of the adhesive layer 20, and a light absorption layer 30 is arranged around the monochromatic light-emitting structure 50, and the light absorption layer 30 at least surrounds the side wall of the monochromatic light-emitting structure 50. In this way, when the light emitted obliquely from the monochromatic light-emitting structure 50 will be absorbed by the light absorption layer 30, thereby avoiding the problem of light crosstalk caused by the light being emitted obliquely to the adjacent monochromatic light-emitting structure 50, and ensuring the display effect of the light-emitting device. In addition, a passivation layer 40 is also arranged on the light absorption layer 30, and the passivation layer 40 covers the light absorption layer 30 to isolate the light absorption layer 30 from contacting other film layers, which can protect the light absorption layer 30.

[0072] Optionally, the reflectivity of the light absorbing layer 30 is less than or equal to 20%. Using a light absorbing layer 30 with a reflectivity less than the above range can ensure that most of the light incident on the light absorbing layer 30 is absorbed by the light absorbing layer 30, thereby reducing the light crosstalk problem caused by light reflection.

[0073] Optionally, the light absorbing layer 30 includes an insulating material layer 31 and a black filler 32 located in the insulating material layer 31 .

[0074] Exemplarily, the insulating material layer 31 may be at least one of a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer.

[0075] Exemplarily, the thickness of the insulating material layer 31 is greater than or equal to the thickness of the monochromatic light emitting structure 50 , so as to ensure that the light absorbing layer 30 can completely surround the side wall of the monochromatic light emitting structure 50 .

[0076] For example, the black filler 32 may be carbon particles, carbon nanotube particles, metal particles or black pigment.

[0077] In this way, the insulating material layer 31 is filled with black filler 32, so that the light absorbing layer 30 is black, which can not only absorb light well, but also make the background of the monochrome light-emitting structure 50 black, so as to improve the contrast and enhance the display effect of the light-emitting device.

[0078] Optionally, the density of the black filler 32 in the insulating material layer 31 close to the monochromatic light emitting structure 50 is greater than the density of the black filler 32 in the insulating material layer 31 far from the monochromatic light emitting structure 50 .

[0079] In this way, the density of the black filler 32 in the portion of the film layer on the insulating material layer 31 closest to the monochromatic light-emitting structure 50 is higher, so that the light absorption effect of the portion of the film layer closest to the monochromatic light-emitting structure 50 is better, and the oblique light emission of the monochromatic light-emitting structure 50 can be avoided to the greatest extent. The density of the black filler 32 in the portion of the film layer on the insulating material layer 31 far from the monochromatic light-emitting structure 50 is lower, which can reduce the amount of black filler 32 used, thereby saving the preparation cost.

[0080] Exemplarily, when the black filler 32 is carbon particles, the particle size of the carbon particles in the portion of the insulating material layer 31 close to the monochromatic light-emitting structure 50 is smaller than the particle size of the carbon particles in the portion of the insulating material layer 31 far from the monochromatic light-emitting structure 50 .

[0081] In this way, the size of the carbon particles in the part of the film layer of the insulating material layer 31 close to the monochromatic light-emitting structure 50 is smaller, which makes the gaps between the carbon particles smaller, and can prevent light from escaping from the gaps between the carbon particles, further improving the light absorption effect of the light absorption layer 30.

[0082] Figure 4 Schematic diagram of another light emitting device provided by the embodiment of the present disclosure. Figure 4 As shown, the passivation layer 40 has a first via hole 41 exposing each single-color light emitting structure 50 .

[0083] like Figure 4 As shown, the light-emitting device also includes a metal trace 60 and a reflective layer 70. The reflective layer 70 is located in the first via hole 41. The reflective layer 70 has a second via hole 71 that passes through the reflective layer 70. The metal trace 60 is located on the surface of the passivation layer 40 away from the light-emitting substrate 10, and the metal trace 60 covers the reflective layer 70. The metal trace 60 is electrically connected to the monochromatic light-emitting structure 50 through the second via hole 71.

[0084] In the above implementation, a reflective layer 70 is provided on the side of the monochromatic light emitting structure 50 away from the light emitting substrate 10 , which can improve the reflectivity and allow more light to be emitted from the light emitting substrate 10 , thereby improving the brightness of the monochromatic light emitting structure 50 .

[0085] At the same time, the first via hole 41 is filled with a reflective layer 70 to avoid the presence of a large number of concave holes on the surface of the passivation layer 40, making the surface of the passivation layer 40 flatter, so that the metal wiring 60 formed on the passivation layer 40 will not have many bends or ups and downs, which will cause the risk of the metal wiring 60 breaking, thereby improving the reliability of the light-emitting device.

[0086] The reflective layer 70 is an insulating layer 90 , and thus a first via hole 41 is provided on the reflective layer 70 , so that the metal trace 60 can be electrically connected to the monochromatic light emitting structure 50 through the first via hole 41 .

[0087] Exemplarily, the reflective layer 70 may be a distributed Bragg reflector (DBR) layer, wherein the DBR layer includes a plurality of periodically alternately stacked SiO2 layers and TiO2 layers, and the number of periods of the DBR layer may be between 20 and 50. For example, the number of periods of the DBR layer is 32.

[0088] The thickness of the SiO2 layer in the DBR layer may be 800 angstroms to 1200 angstroms, and the thickness of the TiO2 layer may be 500 angstroms to 900 angstroms.

[0089] Alternatively, if Figure 2 As shown, the light-emitting device also includes a metal connection layer 80, which is located in the first via hole 41 and is electrically connected to the monochromatic light-emitting structure 50. The reflective layer 70 covers the metal connection layer 80, and the second via hole 71 exposes the metal connection layer 80. The metal trace 60 is connected to the metal connection layer 80 through the second via hole 71.

[0090] In the disclosed embodiment, the reflectivity of the metal connection layer 80 is greater than the reflectivity of the metal trace 60 .

[0091] In the above implementation, a metal connection layer 80 is disposed in the first via hole 41 , so that the metal trace 60 can be connected to the metal connection layer 80 after passing through the second via hole 71 , and electrically connected to the monochromatic light emitting structure 50 through the metal connection layer 80 .

[0092] Since the metal material of the metal wiring 60 is mostly Au, Ag and other materials with low reflectivity, when the area of ​​the metal wiring 60 in contact with the monochromatic light-emitting structure 50 is too large, it is easy to absorb part of the light and reduce the brightness of the light. By setting a metal connection layer 80 with a high reflectivity between the metal wiring 60 and the monochromatic light-emitting structure 50, the metal connection layer 80 replaces the metal wiring 60 in contact with the monochromatic light-emitting structure 50, thereby preventing the metal wiring 60 from absorbing more light, thereby improving the brightness of the monochromatic light-emitting structure 50.

[0093] Exemplarily, the metal connection layer 80 is made of metals such as Al, Mg and Ca.

[0094] Alternatively, if Figure 4 As shown, the area of ​​the orthographic projection of the metal connection layer 80 on the light output substrate 10 is larger than the area of ​​the orthographic projection of the second via hole 71 on the light output substrate 10 .

[0095] Compared with the metal wiring 60 directly contacting the monochromatic light-emitting structure 50 through the second via 71, the metal connection layer 80 is set to cover the entire surface in the first via 41, so as to ensure that the contact area between the metal connection layer 80 and the monochromatic light-emitting structure 50 is large enough, thereby ensuring that the current can be evenly transmitted to the monochromatic light-emitting structure 50; at the same time, it can also prevent the problem of excessive current in local areas of the monochromatic light-emitting structure 50 when the metal wiring 60 directly contacts the monochromatic light-emitting structure 50 through the second via 71.

[0096] Alternatively, if Figure 1 , 2 As shown, multiple monochromatic light-emitting structures 50 include a red light-emitting structure 51, a green light-emitting structure 52 and a blue light-emitting structure 53. The red light-emitting structure 51, the green light-emitting structure 52 and the blue light-emitting structure 53 all include a first electrode 54 and a second electrode 55 of different conductivity types. The metal wiring 60 is connected to the first electrode 54 or the second electrode 55 through a second via 71.

[0097] In the present disclosure, Figure 1 As shown, the metal routing 60 may include at least four metal routings, the first metal routing 60 is connected to the first electrode 54 of the red light emitting structure 51, the second metal routing 60 is connected to the first electrode 54 of the green light emitting structure 52, the third metal routing 60 is connected to the first electrode 54 of the blue light emitting structure 53, and the fourth metal routing 60 is connected to the second electrodes 55 of the red light emitting structure 51, the green light emitting structure 52 and the blue light emitting structure 53 at the same time.

[0098] In the embodiment of the present disclosure, the monochromatic light emitting structure 50 may include an epitaxial layer, a first electrode 54 and a second electrode 55, wherein the epitaxial layer includes a p-type layer, a light emitting layer and an n-type layer stacked in sequence, and the n-type layer has a groove exposing the p-type layer.

[0099] For example, the first electrode 54 may be a p-type electrode, and the second electrode 55 may be an n-type electrode. The first electrode 54 is located in the groove and connected to the p-type layer, and the second electrode 55 is located on the surface of the n-type layer.

[0100] Optionally, the red epitaxial layer of the red light emitting structure 51 includes a first p-type layer, a first light emitting layer and a first n-type layer stacked in sequence.

[0101] In the red epitaxial layer, the first p-type layer includes a p-type AlInP layer.

[0102] The first light-emitting layer includes an AlGaInP quantum well layer and an AlGaInP quantum barrier layer grown alternately, wherein the Al content in the AlGaInP quantum well layer and the AlGaInP quantum barrier layer is different. The first light-emitting layer may include 3 to 8 periods of AlGaInP quantum well layers and AlGaInP quantum barrier layers stacked alternately.

[0103] The first n-type layer includes an n-type AlGaInP current spreading layer.

[0104] Optionally, the green epitaxial layer of the green light emitting structure 52 includes a second p-type layer, a second light emitting layer and a second n-type layer stacked in sequence.

[0105] In the green epitaxial layer, the second p-type layer includes a p-type GaN layer.

[0106] The second light-emitting layer includes alternately grown InGaN quantum well layers and GaN quantum barrier layers. The second light-emitting layer may include 3 to 8 periods of alternately stacked InGaN quantum well layers and GaN quantum barrier layers.

[0107] The second n-type layer includes an n-type GaN layer.

[0108] Optionally, the blue epitaxial layer of the blue light emitting structure 53 includes a third p-type layer, a third light emitting layer and a third n-type layer stacked in sequence.

[0109] In the blue epitaxial layer, the third p-type layer includes a p-type GaN layer.

[0110] The third light emitting layer may include alternately grown InGaN quantum well layers and GaN quantum barrier layers. The third light emitting layer may include 3 to 8 periods of alternately stacked InGaN quantum well layers and GaN quantum barrier layers.

[0111] The third n-type layer includes an n-type GaN layer.

[0112] Optionally, the thickness of the single-color light emitting structure 50 is 2 μm to 10 μm.

[0113] Exemplarily, the thickness of the red epitaxial layer is 5 μm, the thickness of the green epitaxial layer is 8 μm, and the thickness of the blue epitaxial layer is 6 μm.

[0114] Optionally, the light output substrate 10 may be a sapphire substrate or a glass substrate.

[0115] Exemplarily, the thickness of the light output substrate 10 is greater than or equal to 10 μm, the light output substrate 10 may be a complete plate without division, and the area of ​​the light output substrate 10 is greater than the area of ​​the orthographic projection of the plurality of monochromatic light emitting structures 50 on the light output substrate 10 .

[0116] like Figure 1 , 2 As shown, the light emitting device further includes: an insulating layer 90 , a first solder pad 91 , a second solder pad 92 , a third solder pad 93 and a fourth solder pad 94 , the insulating layer 90 is located on the surface of the passivation layer 40 away from the light emitting substrate 10 , and the insulating layer 90 has a third via 95 exposing the metal trace 60 .

[0117] By providing the insulating layer 90 to wrap the metal wiring 60 , the problem of short circuit caused by the metal wiring 60 being exposed outside can be avoided, and the metal wiring 60 can be protected.

[0118] Optionally, the insulating layer 90 may cover the sidewalls of the adhesive layer 20 , the sidewalls of the light absorbing layer 30 , and the sidewalls of the passivation layer 40 to play a protective role.

[0119] Exemplarily, the insulating layer 90 includes at least one of a silicon oxide layer, a titanium oxide layer, an aluminum oxide layer, and a distributed Bragg reflector layer.

[0120] Exemplarily, the insulating layer 90 may be a DBR layer, which includes a plurality of SiO2 layers and TiO2 layers that are periodically and alternately stacked. The number of periods of the DBR layer may be between 20 and 50. For example, the number of periods of the DBR layer is 32.

[0121] The thickness of the SiO2 layer in the DBR layer may be 800 angstroms to 1200 angstroms, and the thickness of the TiO2 layer may be 500 angstroms to 900 angstroms.

[0122] like Figure 1 As shown, the first pad 91, the second pad 92, the third pad 93 and the fourth pad 94 are all located on the surface of the insulating layer 90 away from the light output substrate 10, the first pad 91 is connected to the metal wiring 60 through the third via 95, and the first pad 91 is connected to the first electrode 54 of the red light emitting structure 51 through the metal wiring 60.

[0123] like Figure 1 As shown, the second pad 92 is connected to the metal wiring 60 through the third via 95 , and the second pad 92 is connected to the first electrode 54 of the green light emitting structure 52 through the metal wiring 60 .

[0124] Figure 5 yes Figure 1 A schematic diagram of a BB cross section is provided. Figure 5 As shown, the third pad 93 is connected to the metal wiring 60 through the third via 95 , and the third pad 93 is connected to the first electrode 54 of the blue light emitting structure 53 through the metal wiring 60 .

[0125] like Figure 5 As shown, the fourth pad 94 is connected to the metal wiring 60 through the third via hole 95 , and is connected to the second electrode 55 of each monochromatic light emitting structure 50 through the metal wiring 60 .

[0126] The metal trace 60 connected to the fourth pad 94 is in a long strip shape, and the metal trace 60 is electrically connected to the second electrodes 55 of the red light emitting structure 51 , the green light emitting structure 52 and the blue light emitting structure 53 at the same time.

[0127] In the above implementation, the second electrode 55 of each monochromatic light-emitting structure 50 is electrically connected to the same metal wiring 60, so that the same type of semiconductor layers of multiple monochromatic light-emitting structures 50 are connected together so that they can be powered on simultaneously by the fourth pad 94, and the other type of semiconductor layer of each monochromatic light-emitting structure 50 is connected to different metal wirings 60 respectively to be powered on separately, thereby achieving the purpose of individually controlling the light emission of each monochromatic light-emitting structure 50.

[0128] In the disclosed embodiment, the fourth pad 94 is used as a common pad so as to be electrically connected to the same type of semiconductor layer of each monochromatic light emitting structure 50 at the same time. The first pad 91, the second pad 92 and the third pad 93 are electrically connected to another type of semiconductor layer of each monochromatic light emitting structure 50 respectively so as to be energized separately, thereby achieving the purpose of separately controlling the light emission of each monochromatic light emitting structure 50.

[0129] Alternatively, the first electrode 54 and the second electrode 55 may each include a Cr layer, an Al layer, a Ti layer, and a Pt layer stacked in sequence.

[0130] The thickness of the Cr layer by evaporation is 1500 angstroms to 2500 angstroms, the thickness of the Al layer by evaporation is 1000 angstroms to 2500 angstroms, the thickness of the Ti layer by evaporation is 300 angstroms to 700 angstroms, and the thickness of the Pt layer by evaporation is 1500 angstroms to 2500 angstroms.

[0131] Optionally, the first pad 91 , the second pad 92 , the third pad 93 and the fourth pad 94 each include a first Ti layer, an Al layer, a second Ti layer, a Pt layer, a Ni layer and an Au layer stacked in sequence.

[0132] Exemplarily, the thickness of the first Ti layer is 20 angstroms to 100 angstroms. For example, the thickness of the first Ti layer is 50 angstroms.

[0133] Exemplarily, the thickness of the Al layer is 10000 angstroms to 20000 angstroms. For example, the thickness of the Al layer is 15000 angstroms.

[0134] Exemplarily, the thickness of the second Ti layer is 500 angstroms to 1500 angstroms. For example, the thickness of the second Ti layer is 1000 angstroms.

[0135] Exemplarily, the thickness of the Pt layer is 500 angstroms to 1500 angstroms. For example, the thickness of the Pt layer is 1000 angstroms.

[0136] Exemplarily, the thickness of the Ni layer is 60,000 angstroms to 80,000 angstroms. For example, the thickness of the Ni layer is 70,000 angstroms.

[0137] Exemplarily, the thickness of the Au layer is 1500 angstroms to 2500 angstroms. For example, the thickness of the Au layer is 2000 angstroms.

[0138] Optionally, the passivation layer 40 includes at least one of a silicon oxide layer, a titanium oxide layer, an aluminum oxide layer, and a distributed Bragg reflector layer.

[0139] Exemplarily, the passivation layer 40 may be a DBR layer, which includes a plurality of SiO2 layers and TiO2 layers that are periodically and alternately stacked. The number of periods of the DBR layer may be between 20 and 50. For example, the number of periods of the DBR layer is 32.

[0140] The thickness of the SiO2 layer in the DBR layer may be 800 angstroms to 1200 angstroms, and the thickness of the TiO2 layer may be 500 angstroms to 900 angstroms.

[0141] Alternatively, the bonding layer 20 may be a transparent organic material layer. Exemplarily, the bonding layer 20 may include a polymethyl methacrylate layer, a polycarbonate layer, a polystyrene layer, a polypropylene layer, and a polyethylene layer.

[0142] In some other implementations of the present disclosure, such as Figure 6 As shown, the first surface has a plurality of protrusion structures arranged at intervals, and the cross-sectional shape of the plurality of protrusion structures is polygonal or arched.

[0143] For example, the cross-sectional shape of the protruding structure is a triangle, and the bottom view of the protruding structure is a circle, that is, the protruding structure is a cone. The protruding structure of this structure can increase the light output and improve the light-emitting angle.

[0144] Exemplarily, the height of the cone is 1 μm to 10 μm, and the maximum radius of the cone is 1 μm to 10 μm.

[0145] Exemplarily, the spacing between adjacent cones is 0 to 5 μm.

[0146] Figure 7 It is a top view of a display module provided by an embodiment of the present disclosure. Figure 8 is a cross-sectional view of a display module provided by an embodiment of the present disclosure. Figure 7 , 8 As shown, the display module includes a plurality of light-emitting devices 1a, a driver integrated circuit 1b (Integrated Circuit, IC for short) and a circuit board 1c as described above, and the plurality of light-emitting devices 1a and the driver integrated circuit 1b are both located on the circuit board 1c.

[0147] Exemplarily, a plurality of light emitting device arrays are arranged on a circuit board.

[0148] Exemplarily, the circuit board may be a printed circuit board (PCB) or a flexible printed circuit board (FPCB).

[0149] The two surfaces of the circuit board have electrical circuits and wires required for electrical connection, and one of the surfaces of the circuit board is used to place the light-emitting device.

[0150] Optionally, the display module further includes a packaging adhesive, which covers a plurality of light-emitting devices, a driver IC and a circuit board. The driver IC is located on the circuit board and is electrically connected via a drive line on the circuit board, and the pads of the plurality of light-emitting devices are also electrically connected to the drive line on the circuit board. In this way, the driver IC can control each light-emitting device via the drive line.

[0151] Fig. 9 is a schematic diagram of a display device provided by an embodiment of the present disclosure. Fig. 9 As shown, the display device includes a plurality of display modules 1d and a bottom plate 1e as described above, and the plurality of display modules 1d are located on the surface of the bottom plate 1e.

[0152] The bottom plate is a supporting plate for supporting the display module, and can be a ceramic plate, an alumina plate, or an aluminum alloy plate.

[0153] The display device can be any product or component with a display function, such as a laptop computer, a tablet computer, a mobile phone, a personal digital assistant (PDA), a navigator, a wearable device, an augmented reality (AR) device, a virtual reality (VR) device, etc.

[0154] The display device may be an electroluminescent display device or a photoluminescent display device. In the case where the display device is an electroluminescent display device, the electroluminescent display device may be an organic electroluminescent diode display device, a quantum dot electroluminescent diode display device or an active matrix organic light emitting diode display device.

[0155] The above does not limit the present disclosure in any form. Although the present disclosure has been disclosed as above through the embodiments, it is not used to limit the present disclosure. Any technician familiar with the profession can make some changes or modifications to equivalent embodiments of equivalent changes using the technical contents disclosed above without departing from the scope of the technical solution of the present disclosure. However, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present disclosure without departing from the content of the technical solution of the present disclosure still falls within the scope of the technical solution of the present disclosure.

Claims

1. A light emitting device, characterized in that: The light emitting device comprises: a light emitting substrate (10), a bonding layer (20) and a plurality of monochromatic light emitting structures (50), wherein the light emitting substrate (10) has a first surface (11) and a second surface (12) opposite to each other, the bonding layer is located on the second surface (12), and the plurality of monochromatic light emitting structures (50) are arranged at intervals on a surface of the bonding layer (20) away from the light emitting substrate (10); The first surface (11) has a plurality of protruding structures (100) arranged at intervals, and the protruding structures (100) include a light-transmitting layer (110) and a reflective layer (120) stacked in sequence in a direction away from the light-emitting substrate (10).

2. The light emitting device according to claim 1, characterized in that: The surface of the light-transmitting layer (110) away from the light-emitting substrate (10) is an inclined surface, the inclined surface has a non-zero angle with the first surface (11), the inclined surface faces the geometric center of the first surface (11), and the reflective layer (120) is located on the inclined surface.

3. The light emitting device according to claim 2, characterized in that: The reflective layer (120) comprises a plurality of first material layers (121) and a plurality of second material layers (122) which are alternately stacked, and the first material layers (121) and the second material layers (122) have different refractive indices; or, The reflective layer (120) comprises a metal layer.

4. The light emitting device according to any one of claims 1 to 3, characterized in that: The protruding structure (100) is arranged in an edge region of the first surface (11), and the edge region surrounds the geometric center of the first surface (11).

5. The light emitting device according to claim 4, characterized in that: At most a portion of the orthographic projection of the protruding structure (100) on the first surface intersects with the orthographic projection of the monochromatic light-emitting structure (50) on the first surface (11).

6. The light emitting device according to any one of claims 1 to 3, characterized in that: The light-emitting device further comprises a light-absorbing layer (30) and a passivation layer (40); the light-absorbing layer (30) is located on a surface of the bonding layer (20) away from the light-emitting substrate (10) and at least surrounds the side walls of each of the monochromatic light-emitting structures (50); and the passivation layer (40) is located on a surface of the light-absorbing layer (30) away from the light-emitting substrate (10).

7. The light emitting device according to claim 6, characterized in that: The light absorbing layer (30) comprises an insulating material layer (31) and a black filler (32) located in the insulating material layer (31), wherein the density of the black filler (32) in the insulating material layer (31) close to the monochromatic light-emitting structure (50) is greater than the density of the black filler (32) in the insulating material layer (31) far from the monochromatic light-emitting structure (50).

8. The light emitting device according to claim 6, characterized in that: The passivation layer (40) has a first via hole (41) exposing each of the monochromatic light-emitting structures (50); The light-emitting device further comprises a metal wiring (60), a reflective layer (70) and a metal connection layer (80); the reflective layer (70) is located in the first via hole (41); the reflective layer (70) has a second via hole (71) penetrating the reflective layer (70); the metal wiring (60) is located on a surface of the passivation layer (40) away from the light-emitting substrate (10) and covers the reflective layer (70); and the metal wiring (60) is electrically connected to the monochromatic light-emitting structure (50) through the second via hole (71); The metal connection layer (80) is located in the first via hole (41) and is electrically connected to the monochromatic light-emitting structure (50); the reflective layer (70) covers the metal connection layer (80); the second via hole (71) exposes the metal connection layer (80); the metal wiring (60) is connected to the metal connection layer (80) through the second via hole (71); and the reflectivity of the metal connection layer (80) is greater than the reflectivity of the metal wiring (60).

9. A display module, characterized in that: The display module comprises a plurality of light-emitting devices, a circuit board and a driver integrated circuit as claimed in any one of claims 1 to 8, wherein the plurality of light-emitting devices and the driver integrated circuit are both located on the circuit board.

10. A display device, characterized in that: The display device comprises a plurality of display modules as claimed in claim 9 and a base plate, wherein the plurality of display modules are located on a surface of the base plate.

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