Room temperature gas sensor structure based on TGV technology and manufacturing method

Abstract

The invention discloses a room temperature gas detector structure based on a TGV technology and a manufacturing method thereof, and relates to the technical field of gas sensing, in particular to a gas detector based on a TGV structure. According to the novel gas detector based on the through hole structure, the thin film in the through hole serves as a gas sensing layer, the sensing function surface is enlarged, the structure is compact, and therefore the novel gas detector serves as a micro-nano gas detector and is connected with an integrated signal processing module, and a complete detector structure is constructed. The detector has high sensitivity and high accuracy, and is flexibly applied to various scenes such as aviation, spaceflight, environment detection, dangerous environment early warning and the like.

Description

Technical Field

[0001] The present invention belongs to the technical field of gas detectors, and relates to a room temperature gas detector structure and a manufacturing method based on TGV (Through-Glass Via) technology. First, a micrometer-level through-hole array is constructed on glass using laser drilling technology, and then a gas sensing film is deposited or coated on a TGV substrate using a process combining magnetron sputtering and thermal oxidation or a process combining hydrothermal method and ultrasonic spraying, and then an electrode structure is set on the surface of the glass substrate or at both ends of the micro-through hole, and finally an integrated signal processing module is designed in the detector structure, and the sensor element is connected to the integrated signal processing module through an electrode interface to complete the manufacturing of a room temperature gas detector based on TGV. Background Art

[0002] With the development of artificial intelligence, big data, 5G communications and the Internet of Everything, functional devices are moving towards smaller size, lower power consumption and higher integration. As a bridge connecting the physical world and the information world, the technology iteration of sensors is changing with each passing day. As an important part of the field of intelligent sensing, gas detectors are widely used in environmental pollution control detection, factory production emission detection, motor vehicle exhaust detection, housing decoration safety detection, medical health detection and other aspects. Due to its wide range of references, the requirements for gas detectors in various extreme use environments are gradually increasing. In the current era of rapid development of the information age, people have put forward new requirements for gas detectors such as miniaturization, integration, low power consumption, high stability, and biocompatibility.

[0003] Traditional gas sensors are mainly prepared by hydrothermal synthesis, which produces a large amount of waste liquid discharge in the process, and the use of high-temperature reactors also adds hidden dangers in the production process. In addition, most gas sensors use a side-heated gas sensor structure. Although this structure is widely used, it is difficult to achieve high integration due to its device structure, and has limitations in micro-sensor chips and wearable sensor devices. The current gas sensor chip based on micro-electromechanical technology (MEMS) has a small effective sensing area due to its small size and limited sensing material loading area. In order to improve the gas-sensitive performance of the sensor, most gas sensors require an external heating device. On the one hand, its operating temperature is relatively high (>100°C), which has certain usage restrictions for flammable and explosive gas detection environments and human wearable detection environments. On the other hand, the heating device will increase the overall power consumption of the device and reduce the battery life.

[0004] Through-glass via technology is an advanced packaging technology that integrates chips with different functions by vertically passing through different chips or different layers that make up the stack. The TGV substrate has excellent dielectric properties, which reduces substrate loss and parasitic effects, ensuring the integrity of the transmitted signal. The thermal expansion coefficient of glass is adjustable, which can reduce thermal mismatch with different materials. The target gas flows through the micro-nano through-hole and fully contacts the sensing material layer on it, greatly increasing the specific surface area and effective sensing area of ​​the device. In addition, due to the ultra-thin and transparent characteristics of the TGV substrate, it can be integrated in a very small space or applied to some optical devices. TGV has great application potential in the field of gas detectors. In the literature that has been consulted, TGV technology has not yet been applied to the field of gas sensing. Summary of the invention

[0005] Based on the above content, a new type of highly integrated small-sized room temperature gas detector is urgently needed. The present invention applies TGV technology to the field of gas sensing for the first time, designs a room temperature gas detector structure based on TGV technology and provides a detection manufacturing method.

[0006] A room temperature gas detector based on TGV technology can respond to target gas at room temperature (20°C), issue an alarm and display the reference concentration of the target gas, and is characterized in that it includes a TGV-based sensor element and an integrated signal processing module connected to it through an electrode interface, wherein:

[0007] The TGV-based sensor element is characterized in that a micron-level through-hole array is first constructed on glass using laser drilling technology to obtain a TGV glass substrate. A gas sensing film is then deposited or coated on the TGV substrate using a process combining magnetron sputtering and thermal oxidation or a process combining hydrothermal method and ultrasonic spraying, and then an electrode structure is arranged on the surface of the glass substrate or at both ends of the micro-through-holes.

[0008] Preferably, the TGV glass substrate is characterized in that a through hole array with a micrometer-level aperture is formed on quartz glass, silicate glass or silica glass by laser drilling technology, the through holes are cylindrical holes or truncated cone holes, the maximum aperture is 30-200μm, the minimum aperture is 10-150μm, the hole spacing is 100-400μm, and the through hole depth is consistent with the thickness of the TGV glass substrate, which is 200-500μm. The shape of the TGV glass substrate can be circular or rectangular, and its side length or diameter is 10-50mm.

[0009] The integrated signal processing module is characterized by comprising an electrode interface, a power supply unit, a signal processing unit, an alarm unit and a digital display unit.

[0010] The electrode interface is characterized by comprising a TGV-based sensor element slot and a contact probe. The probe is made of gold, brass, or tungsten steel. The electrode interface can fix the TGV-based sensor element and collect and transmit the electrical signal of the TGV-based sensor element through the contact probe. The electrode interface uses a slot of fixed specifications, which is convenient for replacement when the TGV-based sensor element is damaged or fails.

[0011] The signal processing unit is characterized in that it can receive and process the electrical signal of the TGV-based sensor element through the electrode interface. The sensing film deposited or coated by the TGV-based sensor element is a resistive semiconductor gas sensor, and its working principle is that when the sensing film material contacts the gas to be tested, the resistance value changes due to the interaction between the gas molecules and the material surface, thereby detecting the gas concentration. The change in electrical signal caused by the change in resistance value will be input into the signal processing unit. The signal processing unit will record the current resistance value of the sensor element and calculate the response value (S) of the gas detector at this time through the following equation:

[0012]

[0013] Where R a is the resistance value of the TGV-based sensor element in the air. This value can be calculated by averaging the first 100 resistance values ​​detected after the detector is turned on. g It is the real-time resistance value of the TGV-based sensor element during the test. After calculating the real-time resistance value, the signal processing unit will compare it with the resistance value of the TGV-based sensor element when it is exposed to different concentrations. When the resistance value enters the resistance value range corresponding to a certain concentration, the current corresponding target gas reference concentration will be output to the digital display unit and displayed on the LCD screen. In addition, when the target gas concentration output by the signal processing unit is greater than or less than a certain value, the alarm instruction will be input to the alarm unit, and the buzzer alarm will start working.

[0014] The present invention provides two different methods for preparing TGV-based room temperature gas detectors, which are characterized by comprising a magnetron sputtering method combined with a thermal oxidation process, or a hydrothermal method combined with an ultrasonic spraying process.

[0015] For magnetron sputtering combined with thermal oxidation process, the process steps are:

[0016] (1) Clean the TGV sample by placing it in acetone, toluene, and ethanol for ultrasonic cleaning in turn. The cleaning time is 15 minutes each. Take out the TGV sample and purge and dry it with high-purity nitrogen.

[0017] (2) The sample is placed in a magnetron sputtering coating machine, and a high-purity metal target (purity of 99.99%) is used as a sputtering metal source, including but not limited to one or more of Zn, W, Cu, Ni, Ag, and Sn.

[0018] (3) Evacuate the sputtering chamber to a vacuum level lower than 1×10 -3 Pa, Ar is introduced as sputtering gas before sputtering begins, the gas flow rate is controlled at 10-70 sccm, and the sputtering working pressure is maintained at 0.1 Pa-1 Pa.

[0019] (4) Sputtering coating is performed on the surface of the TGV using a radio frequency power supply, with the power set to 80 to 150 W and the sputtering time set to 600 to 3600 s.

[0020] (5) The prepared sample is placed in a muffle furnace for calcination, air is introduced, the flow rate is controlled at 20 to 100 sccm, the calcination temperature is 300 to 600° C., and the calcination time is 60 to 180 minutes.

[0021] (6) The second surface of the TGV sample is coated with a film using the above process, so that the sample has a second-surface deposited film, while ensuring that the film on the inner wall of the through hole with an aperture of 50 to 200 μm is dense and uniform.

[0022] (7) Take out the calcined TGV sample, and use a mask to deposit 10-150 nm electrodes on the surface of the glass substrate or at both ends of a through hole with a diameter of 50-200 μm. The electrode material includes but is not limited to Au, Cu, Ag, graphite and other materials.

[0023] (8) The unit structures of the integrated signal processing module are wired and packaged, and the TGV-based sensor element is inserted into the electrode interface slot to obtain a TGV-based room temperature gas detector.

[0024] For the hydrothermal method combined with ultrasonic spraying process, the process steps are:

[0025] (1) Take out 2-6 g of metal precursor salt, the metal includes but is not limited to one of Zn, W, Cu, Ni, Ag, Sn, dissolve it in 40-100 ml of deionized water, and add 10-60 ml of diluted hydrochloric acid (HCl).

[0026] Take out 2-6 g of oxalic acid (H2C2O4), dissolve it in 60-100 ml of deionized water, mix the two solutions, stir them thoroughly to form a translucent and uniform solution, add it into a hydrothermal reactor, maintain a high temperature of 150-300°C, and react for 2-4 hours.

[0027] (2) The solution obtained by the reaction is taken out and centrifuged to remove the supernatant, and then ultrasonic cleaning is performed, and the obtained powder is calcined at a calcination temperature of 300 to 700°C.

[0028] (3) Take out the calcined powder, add it to 10-50 ml of anhydrous ethanol and stir it. The viscosity of the solution is 10-50 cps. After mixing evenly, add it to a special syringe for ultrasonic spraying, and set the ultrasonic spraying process parameters: the needle tube liquid inlet flow rate is 450 μL / min, the cross spraying mode is achieved by controlling the stepper motor, the spraying cycle is 30-100 circles, the nozzle carrier gas pressure during spraying is 30-90 MPa, and the TGV is heated during spraying, and the temperature is controlled at 100-200 °C.

[0029] (4) Place the TGV sample on the heated base plate, and firmly adsorb the sample through the air extraction holes on the base plate to prevent shaking during spraying, and start spraying.

[0030] (5) Take out the calcined TGV sample, and use a mask to deposit 10-150 nm electrodes on the surface of the glass substrate or at both ends of a through hole with a diameter of 50-200 μm. The electrode material includes but is not limited to Au, Cu, Ag, graphite and other materials.

[0031] Compared with the prior art, the present invention has the following obvious advantages and beneficial effects:

[0032] The present invention pioneeringly introduces TGV technology into gas sensors to obtain a room temperature gas detector structure and manufacturing method based on TGV technology. First, compared with traditional gas sensors, the present invention has the characteristics of small size, high integration, ultra-thinness, etc., which greatly reduces the use space of the detector. The structure is compact and the entire device can be integrated into various electronic devices by using an ultra-thin glass substrate, which is convenient for packaging and integration. Secondly, the present invention gives full play to the large specific surface area of ​​the TGV structure that is not possessed by flat or curved substrates, and at the same time adopts double-sided coating technology to significantly increase the effective area of ​​the gas sensing layer, thereby improving the sensitivity and accuracy of gas detection. In addition, compared with the previous gas sensor manufacturing method, the present invention provides a method of using magnetron sputtering combined with thermal oxidation process, which can realize industrialization and mass production. At the same time, the process is green and environmentally friendly, can achieve zero pollution emissions, and greatly reduces the waste liquid emissions generated by traditional processes such as hydrothermal method. In addition, the present invention is different from the previous gas sensor. When the gas sensing material fails, the sensor needs to be replaced as a whole. The TGV-based sensing element in the present invention is detachable. When the sensing element fails, a new element can be replaced, which greatly saves the cost of replacing the detector as a whole and is easy to repair and replace. Finally, the present invention can detect the target gas at room temperature (20°C), which can break through the limitation that traditional gas sensors cannot be used in flammable and explosive gas environments and wearable environments. In addition, the heating device will increase the overall power consumption of the device, further reducing energy consumption and battery replacement costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1Schematic diagram of the structure of TGV-based room temperature gas detector

[0034] in:

[0035] 1. TGV-based sensor element; 2. Electrode interface; 3. Alarm unit; 4. Digital display unit; 5. Power supply unit; 6. Integrated signal processing unit.

[0036] Figure 2 A physical picture of the TGV-based room temperature gas detector sensor element

[0037] Figure 3 A scanning electron microscope magnified image of the TGV-based room temperature gas detector sensor element

[0038] Figure 4 Flow chart of magnetron sputtering combined with thermal oxidation process

[0039] Figure 5 Flow chart of hydrothermal method combined with ultrasonic spraying process

[0040] Figure 6 The response and recovery curves of the ZnO room temperature gas detector based on TGV technology in Example 1 after three gas inlet / outlet cycles at room temperature with 10ppm H2S.

[0041] Figure 7 The response curve of the ZnO / CuO room temperature gas detector based on TGV technology in Example 2 to 10ppmH2S at room temperature and the response values ​​at various concentrations

[0042] Figure 8 The response values ​​of the WO3 gas detector based on TGV technology in Example 3 to 10 ppm NO at various temperatures are DETAILED DESCRIPTION

[0043] In order to explain the principle and production application of the present invention in more detail, embodiments are given. The embodiments are only used to further describe the present invention, but they do not limit the protection scope of the present invention.

[0044] Example 1

[0045] This embodiment proposes a manufacturing step and testing method of a ZnO room temperature gas detector based on TGV technology. The TGV sensor element is a through-hole ultra-thin glass with an aperture of 100 μm, made of silica glass, and the element size is a rectangle with a diameter of 2 cm. The specific detector manufacturing and testing includes the following steps:

[0046] (1) The TGV sample was cleaned by ultrasonic cleaning in acetone, toluene, and ethanol in sequence, with each cleaning step lasting 15 minutes. The TGV sample was taken out and dried by nitrogen purge.

[0047] (2) The sample was fixed on the sample stage of the magnetron sputtering coating machine, and a high-purity Zn target (purity 99.99%) was used as the sputtering target. The sputtering chamber was evacuated to a vacuum level of less than 1×10 -3 Pa, Ar gas was introduced, the gas flow rate was controlled at 40 sccm, and the sputtering working pressure was maintained at 1 Pa.

[0048] (3) Sputter coating the TGV surface, set the power to 120 W, the sputtering time to 900 s, and take out the sample after sputtering.

[0049] (4) The second side of the TGV sample is coated with a film using the process steps 2 to 3 above, so that the sample has a second-side deposited film and the film on the inner wall of the 100 μm aperture through-hole is dense and uniform.

[0050] (5) The prepared sample was placed in a muffle furnace for calcination, air was introduced, the flow rate was controlled at 50 sccm, the calcination temperature was 500°C, and the calcination time was 120 min.

[0051] (6) The TGV sensor element is placed in a magnetron sputtering coating machine, the mask is placed on the TGV sensor element, and the electrode structure is deposited using a high-purity Au target (purity of 99.99%). The power supply is set to 100 W and the sputtering time is set to 110 s.

[0052] (7) The TGV sensor element is aged in air by placing it on the heated base plate of the test platform and setting the temperature to 200°C. The sensor element is connected to the test computer and power supply. The resistance value of the TGV sensor element is tested once per second. When the first three significant digits of the resistance value are consistent for five consecutive times, the element is considered to have been aged.

[0053] (8) Install the lead wires of the electrode interface slot, power supply unit, signal processing unit, alarm unit and digital display unit. (9) Insert the TGV sensor element into the electrode interface slot, turn on the power switch, and test in the air for 5 minutes.

[0054] Get the average resistance value in the current air environment.

[0055] (10) Place the sensor in a 10 ppm H2S gas environment at room temperature, and observe the current response value and target gas reference concentration through the digital display unit.

[0056] According to the detector test results, the response value of the TGV-based ZnO room-temperature gas detector with an aperture of 100 μm to 10 ppm H2S gas at 20°C is 18.81%, the response time is 85 s, and the recovery time is 585 s.

[0057] Example 2

[0058] This embodiment proposes a manufacturing step and testing method of a ZnO / CuO room temperature gas detector based on TGV technology. The TGV sensor element is a through-hole ultra-thin glass with an aperture of 200μm, made of quartz glass, and the element size is a rectangle with a diameter of 2cm. The specific detector manufacturing and testing includes the following steps:

[0059] (1) The TGV sample was cleaned by ultrasonic cleaning in acetone, toluene, and ethanol in sequence, with each cleaning step lasting 15 minutes. The TGV sample was taken out and dried by nitrogen purge.

[0060] (2) The sample was fixed on the sample stage of the magnetron sputtering coating machine, and a high-purity Zn target (purity 99.99%) was used as the sputtering target. The sputtering chamber was evacuated to a vacuum level of less than 1×10 -3 Pa, Ar gas was introduced, the gas flow rate was controlled at 40 sccm, and the sputtering working pressure was maintained at 1 Pa.

[0061] (3) Sputter coating the TGV surface, set the power to 120 W, the sputtering time to 900 s, and take out the sample after sputtering.

[0062] (4) The second side of the TGV sample is coated with a film using the process steps 2 to 3 above, so that the sample has a second-side deposited film and the film on the inner wall of the 200 μm aperture through hole is dense and uniform.

[0063] (5) The sample was placed in a muffle furnace for calcination, air was introduced, the flow rate was controlled at 50 sccm, the calcination temperature was 500°C, and the calcination time was 120 min.

[0064] (6) The TGV sensor element after the first thermal oxidation was fixed on the sample stage of the magnetron sputtering coating machine. A high-purity Cu target (purity 99.99%) was used as the sputtering target. The sputtering chamber was evacuated to a vacuum level of less than 1×10 -3 Pa, Ar gas was introduced, the gas flow rate was controlled at 40 sccm, and the sputtering working pressure was maintained at 1 Pa.

[0065] (7) Deposit a Cu metal film on the first surface of the TGV, set the power supply to 100 W, the sputtering time to 30 s, and take out the sample after sputtering.

[0066] (8) The sample was placed in a muffle furnace for calcination, air was introduced, the flow rate was controlled at 50 sccm, the calcination temperature was 500°C, and the calcination time was 60 min.

[0067] (9) Place the TGV sensor element in a magnetron sputtering coating machine, place the mask on the TGV sensor element, use a high-purity Au target (purity of 99.99%) to deposit the electrode structure on the ZnO / CuO thin film deposition surface, set the power supply to 100 W, and the sputtering time to 110 s.

[0068] (10) The TGV sensor element is aged in air by placing it on the heated base plate of the test platform and setting the temperature to 250°C. The sensor element is connected to the test computer and power supply. The resistance value of the TGV sensor element is tested once per second. When the first three significant digits of the resistance value are consistent for five consecutive times, the element is considered to have been aged.

[0069] (11) The electrode interface slot, power supply unit, signal processing unit, alarm unit and digital display unit are lead packaged.

[0070] (12) Insert the TGV sensor element into the electrode interface slot, turn on the power switch, test in the air for 10 minutes, and obtain the average resistance value in the current air environment.

[0071] (13) Place the sensor in a 10 ppm H2S gas environment at room temperature, and observe the current response value and target gas reference concentration through the digital display unit.

[0072] According to the detector test results, the response value of the TGV-based ZnO / CuO room-temperature gas detector with an aperture of 200 μm to 10 ppm H2S gas at 20°C is 64.62%, the response time is 171 s, and the recovery time is 904 s.

[0073] Example 3

[0074] This embodiment proposes a manufacturing step and testing method of a WO3 gas detector based on TGV technology. The TGV sensor element is a through-hole ultra-thin glass with a pore size of 200μm, made of quartz glass, and the element size is a rectangle with a diameter of 2cm. The specific detector manufacturing and testing includes the following steps:

[0075] (1) The TGV sample was cleaned by ultrasonic cleaning in acetone, toluene, and ethanol in sequence, with each cleaning step lasting 15 minutes. The TGV sample was taken out and dried by nitrogen purge.

[0076] (2) Take out 4.94g Na2WO4·2H2O, dissolve it in 60ml deionized water, add 10ml 3mol / L HCl. Take out 3.7g H2C2O4, dissolve it in 80ml deionized water, mix the two solutions, stir them well to form a light yellow translucent uniform solution, add it to the hydrothermal reactor, maintain the high temperature of 180℃, and react for 4 hours.

[0077] (3) The obtained solution is taken out and centrifuged to remove the supernatant, and then ultrasonic cleaning is performed. The obtained powder is calcined at a temperature of 500° C.

[0078] (4) The calcined powder was taken out, added to 30 ml of anhydrous ethanol and stirred. After mixing evenly, the powder was added to a special syringe for ultrasonic spraying, and the ultrasonic spraying process parameters were set: the liquid inlet flow rate of the needle tube was 450 μL / min, the cross spraying mode was achieved by controlling the stepper motor, the spraying cycle was 100 circles, the nozzle carrier gas pressure during spraying was 60 MPa, and the TGV was heated during spraying, and the temperature was controlled at 100 °C.

[0079] (5) Place the TGV sample on the heated base plate, and firmly adsorb the sample through the vacuum micropores on the base plate to prevent shaking during spraying, and start spraying.

[0080] (6) The second side of the TGV sample is coated with a sensing film using the process steps 4 to 5 above.

[0081] (7) Place the TGV sensor element in a magnetron sputtering coating machine, place the mask on the TGV sensor element, use a high-purity Au target (purity of 99.99%) to deposit the electrode structure on the WO3 thin film deposition surface, set the power supply to 100 W, and the sputtering time to 110 s.

[0082] (8) The TGV sensor element is aged in air by placing it on the heated bottom plate of the test platform and setting the temperature to 250°C. The sensor element is connected to the test computer and power supply. The resistance value of the TGV sensor element is tested once per second. When the first three significant digits of the resistance value are consistent for five consecutive times, the element is considered to have been aged.

[0083] (9) Install the lead wires of the electrode interface slot, power supply unit, signal processing unit, alarm unit and digital display unit. (10) Insert the TGV sensor element into the electrode interface slot, turn on the power switch, and test in the air for 10 minutes.

[0084] Get the average resistance value in the current air environment.

[0085] (11) Place the sensor in a 10 ppm NO gas environment and observe the current response value and target gas reference concentration through the digital display unit.

[0086] According to the detector test results, the response value of the TGV-based WO3 gas detector with a 200μm aperture to 10ppm NO gas at 120℃ is 15400%, the response time is 87s, and the recovery time is 96s.

Claims

1. The room temperature gas detector structure based on TGV technology is characterized by: include: (a) The base structure of the detector sensor element is a TGV structure with an array of micrometer-scale through holes penetrating the glass substrate; (b) The surface of the detector sensor element substrate is coated or deposited with a gas sensing film using double-sided coating technology. The film evenly and densely covers the TGV surface and the inner wall of the through hole, serving as the gas sensing layer of the detector; (c) An electrode structure is provided on the detector sensing element, wherein the electrodes are provided on the surface of the glass substrate or at both ends of the micro-through hole, and are used to form a detector circuit connection with the gas sensing film to achieve real-time detection and identification of the target gas; (d) An integrated signal processing module is provided in the detector structure and connected to the sensor element electrode structure.

2. The TGV base structure according to claim 1, characterized in that Laser drilling technology is used to form a through-hole array with a micron-level aperture on quartz glass, silicate glass or silica glass. The through-holes are cylindrical holes or truncated cone holes, with a maximum aperture of 30 to 200 μm, a minimum aperture of 10 to 150 μm, a hole spacing of 100 to 400 μm, and a through-hole depth that is consistent with the thickness of the TGV glass substrate, which is 200 to 500 μm; the TGV glass substrate is circular or rectangular in shape, with a side length or diameter of 10 to 50 mm.

3. A process for preparing the structure according to claim 1, characterized in that The deposition and preparation of the sensing film is achieved by using a magnetron sputtering method combined with a thermal oxidation process, or a hydrothermal method combined with an ultrasonic spraying process. The sensing film is coated or deposited on both sides of the TGV sample using a double-sided coating technology. The sensing film completely covers the TGV surface and the inner wall of the through hole with an aperture of 50 to 200 μm, fully utilizing the entire surface of the TGV substrate in contact with the external atmosphere.

4. The process according to claim 3, characterized in that: (a) Cleaning the TGV sample, placing the sample in acetone, toluene, and ethanol for ultrasonic cleaning in sequence, each cleaning step lasts for 15 minutes, and taking out the TGV sample and drying it with nitrogen purge; (b) placing the sample in a magnetron sputtering coating machine, using a metal target as a sputtering metal source, and the metal is one or more of Zn, W, Cu, Ni, Ag, and Sn; (c) The sputtering chamber is evacuated to a vacuum level of less than 1×10 -3 Pa, Ar is introduced as sputtering gas, the gas flow rate is controlled at 10-70 sccm, and the sputtering working pressure is maintained at 0.1 Pa-1 Pa; (d) sputtering the TGV surface with a radio frequency power supply, setting the power to 80-150 W and the sputtering time to 600-3600 s; (e) coating the second surface of the TGV sample so that the sample has a second-surface deposited film, while ensuring that the film on the inner wall of the through-hole with an aperture of 50 to 200 μm is dense and uniform; (f) The prepared sample is placed in a muffle furnace for calcination, air is introduced, the flow rate is controlled at 20 to 100 sccm, the calcination temperature is 300 to 600° C., and the calcination time is 60 to 180 minutes.

5. The process according to claim 3, characterized in that: (a) Take out 2-6g of metal precursor salt, the metal includes but is not limited to one of Zn, W, Cu, Ni, Ag, Sn, dissolve it in 40-100ml of deionized water, add 10-60ml of 3mol / L hydrochloric acid; take out 2-6g of oxalic acid (, dissolve it in 60-100ml of deionized water, mix the two solutions, stir them well to form a translucent and uniform solution, add it to a hydrothermal reactor, maintain a high temperature of 150-300°C, and react for 2-4 hours; (b) taking out the solution obtained by the reaction and removing the supernatant by centrifugation, performing ultrasonic cleaning, and calcining the obtained powder at a calcination temperature of 300 to 700° C.; (c) taking out the calcined powder, adding it to 10-50 ml of anhydrous ethanol and stirring, adding it to the ultrasonic spraying syringe after mixing evenly, and setting the ultrasonic spraying process parameters: the liquid flow rate of the needle tube is 450 μL / min, the cross spraying mode is achieved by controlling the stepper motor, the spraying cycle is 30-100 circles, the nozzle carrier gas pressure during spraying is 30-90 MPa, the heating base is turned on during spraying, and the temperature is controlled at 100° C.; (d) Place the TGV sample on the heated base plate, and firmly adsorb the sample through the air extraction holes on the base plate to prevent shaking during spraying, and start spraying.

6. The room temperature gas detector structure based on TGV technology according to claim 1 is characterized in that: The electrode material is deposited on the surface of the glass substrate or at both ends of a through hole with an aperture of 50 to 200 μm by magnetron sputtering to form a detector circuit connection with the gas sensing film. The electrode is an interdigitated electrode structure or a parallel electrode structure.

7. A process for preparing a structure as claimed in claim 6, characterized in that: (a) Place the target material corresponding to the electrode material into the magnetron sputtering coating machine and evacuate the sputtering chamber to a vacuum level of less than 1×10 -3 Pa, Ar is introduced as sputtering gas, the gas flow rate is controlled at 10-70 sccm, and the sputtering working pressure is maintained at 0.1 Pa-1 Pa; (b) Electrodes are deposited on the gas sensing film using a radio frequency power supply, with the power set to 80 to 150 W and the sputtering time set to 100 to 300 s.

8. The room temperature gas detector structure based on TGV technology according to claim 1 is characterized in that: The integrated signal processing module includes an electrode interface, a power supply unit, a signal processing unit, an alarm unit and a digital display unit.

9. The room temperature gas detector structure based on TGV technology according to claim 8, characterized in that: The electrode interface in the integrated signal processing module connects the detector sensor element with the integrated signal processing module, and transmits the electrical signal of the detector sensor element to the signal processing unit in real time. At the same time, the interface adopts a slot of fixed specifications, which is convenient for replacing a new sensor element when the sensor element is damaged; the power supply unit will continuously provide a constant voltage of 5 to 10V for the detector sensor element; the signal processing unit can process the input electrical signal, determine whether the current concentration of the target gas is an alarm and give a reference concentration of the current target gas, and input the alarm instruction and the current target gas concentration reference value to the alarm unit and the digital display unit respectively; the alarm unit is a buzzer alarm; the digital display unit is a liquid crystal digital display screen.

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