Substrate processing apparatus and substrate processing method

Abstract

The invention relates to a substrate processing apparatus and a substrate processing method. In the substrate processing apparatus provided with a dipping processing part and a single sheet processing part, processing characteristic deviation between substrates is suppressed. The substrate processing apparatus includes a control unit that performs a series of substrate processing. The series of substrate processing includes immersion processing performed by the immersion processing unit, first transfer processing for transferring the substrate group from the immersion processing unit to the first transfer unit via the standby tank, and second transfer processing for transferring the substrate from the first transfer unit to the single sheet processing unit. And a third transfer process for transferring the substrate from the single-sheet processing unit to the second transfer unit. The control unit determines the start time of the immersion process for the next substrate group on the basis of the cumulative time of the second transfer process, the single-chip process, and the third transfer process for the substrate group.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing device and a substrate processing method. Background Art

[0002] In the past, there is known a substrate processing device that includes a single-wafer processing unit (single-wafer processing unit) for processing substrates such as semiconductor wafers one by one, and a batch processing unit (immersion processing unit) for processing multiple substrates by immersing them in a processing liquid at the same time.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application No. 2016-502275 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a technology capable of suppressing variations in processing characteristics between substrates in a substrate processing apparatus including an immersion processing unit and a single-wafer processing unit.

[0008] Solutions for solving problems

[0009] A substrate processing device based on one embodiment of the present disclosure includes an immersion processing unit, a standby tank, a first conveying unit, a first interface, a second conveying unit, a single-chip processing unit, a second interface, a third conveying unit, and a control unit. The immersion processing unit is used to immerse a substrate group including more than one substrate in a processing liquid to process the substrate group. The standby tank is used to immerse the substrate group processed in the immersion processing unit in a rinse liquid and put the substrate group on standby. The first conveying unit conveys the substrate group from the immersion processing unit to the standby tank. The first interface can accommodate the substrate group immersed in the rinse liquid in the standby tank. The second conveying unit conveys the substrate group from the standby tank to the first interface. The single-chip processing unit processes the substrates included in the substrate group one by one. The second interface can accommodate the substrates processed in the single-chip processing unit. The third conveying unit conveys the substrates one by one between the first interface, the single-chip processing unit, and the second interface. The control unit controls each unit to execute a series of substrate processing, including an immersion processing performed by the immersion processing unit, a first transfer processing of transferring a substrate group from the immersion processing unit to the first transfer unit via a standby tank, a second transfer processing of transferring a substrate from the first transfer unit to the single-wafer processing unit, a single-wafer processing performed by the single-wafer processing unit, and a third transfer processing of transferring a substrate from the single-wafer processing unit to the second transfer unit. The control unit determines a start time of an immersion processing for a next substrate group based on the accumulated time of the second transfer processing, the single-wafer processing, and the third transfer processing for the substrate group.

[0010] Effects of the Invention

[0011] According to the present disclosure, in a substrate processing apparatus including an immersion processing section and a single-wafer processing section, variations in processing characteristics between substrates can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram showing the structure of a substrate processing system according to an embodiment.

[0013] Figure 2 It is a diagram showing the structure of a chemical solution tank according to an embodiment.

[0014] Figure 3 It is a diagram showing the structure of a liquid processing unit according to an embodiment.

[0015] Figure 4 The flowchart shows the process procedure executed by the substrate processing system according to the embodiment.

[0016] Figure 5 This is a diagram showing an example of a timing chart for explaining a process of adjusting the start timing of the immersion process for a later substrate group. DETAILED DESCRIPTION

[0017] Hereinafter, a method for implementing the substrate processing apparatus and substrate processing method based on the present disclosure (hereinafter referred to as an "implementation method") will be described in detail with reference to the accompanying drawings. In addition, the substrate processing apparatus and substrate processing method based on the present disclosure are not limited by the implementation method. In addition, the various implementation methods can be appropriately combined within the scope that does not cause contradictions in the processing contents. In addition, the same reference numerals are marked on the same parts in the following embodiments, and repeated descriptions are omitted.

[0018] In addition, in the drawings referred to below, an orthogonal coordinate system is sometimes shown in which mutually orthogonal X-axis direction, Y-axis direction and Z-axis direction are defined and the positive direction of the Z-axis is set as the vertical upward direction to make the description easier to understand. In addition, the rotation direction with the vertical axis as the rotation center is sometimes referred to as the θ direction.

[0019] In the embodiments shown below, expressions such as "certain", "orthogonal", "perpendicular" or "parallel" are sometimes used, but these expressions do not need to be strictly "certain", "orthogonal", "perpendicular" or "parallel". That is, the above expressions allow for deviations in manufacturing accuracy, setting accuracy, etc.

[0020] Conventionally, there is known a substrate processing apparatus which includes a single-wafer processing unit (single-wafer processing unit) for processing substrates such as semiconductor wafers one by one and a batch processing unit (immersion processing unit) for processing a plurality of substrates by immersing them in a processing liquid at a time. In this substrate processing apparatus, a standby tank is sometimes provided for immersing the substrates after the immersion processing in a rinse liquid and allowing the substrates to stand by.

[0021] However, if other substrates are being transported from the interface to the single-wafer processing section when the substrate after immersion treatment is to be transported to the interface with the single-wafer processing section via the standby tank, the substrate after immersion treatment will wait in the standby tank until the transport of other substrates is completed.

[0022] Furthermore, when the waiting time for a plurality of substrates to wait in the waiting tank is different, there is a possibility that the variation in processing characteristics between the substrates will increase.

[0023] Therefore, it is desired to suppress the variation in processing characteristics between substrates in a substrate processing apparatus including an immersion processing unit and a single-wafer processing unit.

[0024] <Structure of substrate processing system>

[0025] First, refer to Figure 1 The configuration of a substrate processing system 1 (an example of a substrate processing apparatus) according to the embodiment will be described. Figure 1 It is a diagram showing the structure of a substrate processing system according to an embodiment.

[0026] like Figure 1 As shown, the substrate processing system 1 includes a loading and unloading unit 2 , a first interface unit 3 , an immersion processing unit 4 , a second interface unit 5 , a single wafer processing unit 6 , and a control device 9 .

[0027] The loading and unloading section 2 includes a load port 21 , a stocker 22 , a loader 23 , and a cassette transport mechanism 24 .

[0028] The load port 21 is arranged on the negative side of the loading and unloading section 2 in the X-axis direction. A plurality of (e.g., four) load ports 21 are arranged along the Y-axis direction. However, the number of the load ports 21 is not particularly limited. A cassette C is placed on the load port 21. The cassette C is a container that accommodates a plurality of (e.g., 25) substrates W arranged vertically in a horizontal posture, and is loaded and unloaded relative to the load port 21.

[0029] A plurality of (e.g., four) storage cabinets 22 are arranged along the Y-axis direction at the center of the loading and unloading section 2 in the X-axis direction. A plurality of (e.g., two) storage cabinets 22 are arranged along the Y-axis direction on the positive side of the loading and unloading section 2 in the X-axis direction and adjacent to the first interface section 3. The storage cabinets 22 may also be arranged in multiple layers in the vertical direction. The storage cabinets 22 temporarily store the boxes C containing the substrates W before the cleaning process, the boxes C in which the substrates W are taken out and the interior becomes empty, and the like. In addition, the number of storage cabinets 22 is not particularly limited.

[0030] The loader 23 is adjacent to the first interface unit 3 and is arranged on the positive side of the loading and unloading unit 2 in the X-axis direction. The loader 23 carries the box C. The loader 23 is provided with a cover opening and closing mechanism (not shown) for opening and closing the cover of the box C. A plurality of loaders 23 may be provided. The loaders 23 may also be arranged in multiple layers in the vertical direction.

[0031] The cassette transport mechanism 24 transports the cassette C between the load port 21, the storage cabinet 22, and the loader 23. The cassette transport mechanism 24 is constituted by, for example, a multi-joint transport robot.

[0032] The first interface 3 is arranged on the positive side in the X-axis direction of the loading and unloading section 2. The first interface 3 transfers the substrate W between the loading and unloading section 2, the immersion treatment section 4, and the single wafer treatment section 6. The first interface 3 includes a substrate transfer mechanism 31, a batch forming section 32, and a delivery section 33 (an example of a second delivery section).

[0033] The substrate transport mechanism 31 transports the substrate W between the cassette C placed on the loader 23, the batch forming unit 32, and the delivery unit 33. The substrate transport mechanism 31 has a plurality of holders for holding a plurality of (e.g., 25) substrates W. The substrate transport mechanism 31 is, for example, composed of a multi-joint robot, and uses a plurality of holders to transport a plurality of (e.g., 25) substrates W at a time. In addition, the substrate transport mechanism 31 can change the posture of the plurality of substrates W from a horizontal posture to a vertical posture during transport.

[0034] The batch forming unit 32 is arranged at the center of the first interface unit 3 in the X-axis direction. The batch forming unit 32 is used to form a batch consisting of a plurality of substrates W. In the embodiment, the batch is formed by combining a total of 50 substrates W accommodated in two boxes C. The batch includes a substrate group consisting of one or more substrates W processed in the immersion processing unit 4. In addition, the number of substrates W constituting the batch is not limited to 50. For example, the batch may also be composed of 100 substrates W.

[0035] The delivery section 33 is adjacent to the single-wafer processing section 6 and is disposed at the center of the first interface section 3 in the Y-axis direction. The delivery section 33 is configured to accommodate a plurality of substrates W in a horizontal position in multiple layers. The delivery section 33 receives the substrates W from the third conveying mechanism 61 and temporarily stores the substrates W until the substrates W are delivered to the loading and unloading section 2. The delivery section 33 accommodates the substrates W processed in the single-wafer processing section 6.

[0036] The immersion processing section 4 is arranged on the positive side of the first interface section 3 in the X-axis direction. That is, the loading and unloading section 2, the first interface section 3, and the immersion processing section 4 are arranged in this order from the negative side in the X-axis direction to the positive side in the X-axis direction. The immersion processing section 4 is used to immerse a substrate group including one or more substrates W in a processing liquid to process the substrate group. One substrate group is composed of one or more substrates W taken out from a batch. One substrate group includes one or more substrates W and the number of the substrates W is less than or equal to the number of the multiple liquid processing sections 62 described later in the single-wafer processing section 6 (for example, less than four). The immersion processing section 4 has a liquid tank 41 and a rinse tank 42.

[0037] The chemical tank 41 and the rinse tank 42 are arranged along the X-axis direction. For example, the chemical tank 41 and the rinse tank 42 are arranged in sequence from the positive side of the X-axis direction to the negative side of the X-axis direction. In addition, the chemical tank 41 and the rinse tank 42 are also collectively referred to as a processing tank. The number of chemical tanks 41 and rinse tanks 42 is not limited to Figure 1 For example, the drug tank 41 and the rinse tank 42 are Figure 1 It can be one group, but it can also be multiple groups.

[0038] The chemical tank 41 and the rinse tank 42 can accommodate at least one substrate W of at least one substrate group arranged in a vertical posture. Supporting devices 41a and 42a are fixed in the chemical tank 41 and the rinse tank 42 respectively to support at least one substrate W forming a substrate group in a vertical posture.

[0039] The chemical solution tank 41 stores a chemical solution for etching the immersed substrate group (hereinafter, also referred to as "etching solution". An example of a treatment solution). The etching solution is, for example, an aqueous phosphoric acid solution (H3PO4). The aqueous phosphoric acid solution selectively etches the silicon oxide film and the silicon nitride film to remove it. The etching solution is not limited to an aqueous phosphoric acid solution. For example, it can also be DHF (dilute hydrofluoric acid), BHF (a mixture of hydrofluoric acid and ammonium fluoride), dilute sulfuric acid, SPM (a mixture of sulfuric acid and hydrogen peroxide), SC1 (a mixture of ammonia, hydrogen peroxide and water), SC2 (a mixture of hydrochloric acid, hydrogen peroxide and water), TMAH (a mixture of tetramethylammonium hydroxide and water), etc. The details of the chemical solution tank 41 are described later.

[0040] The rinse tank 42 stores a treatment liquid for rinsing the substrate group (hereinafter also referred to as "first rinse liquid", an example of treatment liquid). The first rinse liquid is pure water for removing etching liquid from the substrate W, for example, DIW (deionized water).

[0041] The substrate processing system 1 includes a batch transport unit 7 . The batch transport unit 7 includes a batch transport mechanism 70 and transports a batch from the batch forming unit 32 to the immersion processing unit 4 .

[0042] The batch transport mechanism 70 includes a holding body 71, a rail 72, and a moving body 73. The holding body 71 holds a batch in a state where a plurality of substrates W are in a vertical position. The rail 72 extends along the X-axis direction from the batch forming section 32 to the chemical solution tank 41 of the immersion treatment section 4. The moving body 73 is provided on the rail 72 and is used to move the holding body 71 along the rail 72.

[0043] The batch transport mechanism 70 holds the batch formed in the batch forming section 32 using a holding body 71 , and transports the held batch to the immersion treatment section 4 .

[0044] Here, refer to Figure 2 The chemical solution tank 41 will be described. Figure 2 It is a diagram showing the structure of the drug solution tank 41 according to the embodiment.

[0045] In the chemical solution tank 41, a predetermined etching liquid is used to perform an etching process for selectively etching the silicon nitride film (SiN) and the silicon oxide film (SiO2) formed on the substrate W. In this etching process, a solution prepared by adding a silicon (Si)-containing compound to a phosphoric acid (H3PO4) aqueous solution to adjust the silicon concentration is used as the etching liquid.

[0046] As a method for adjusting the silicon concentration in the etching solution, a method of immersing a substrate dummy in a phosphoric acid aqueous solution to dissolve silicon (aging) or a method of dissolving a silicon-containing compound such as colloidal silica in a phosphoric acid aqueous solution can be used. Alternatively, a silicon-containing compound aqueous solution can be added to the phosphoric acid aqueous solution to adjust the silicon concentration.

[0047] like Figure 2 As shown, the chemical tank 41 includes an inner tank 101 and an outer tank 102. The inner tank 101 is a box-shaped tank with an upper opening, and the etching liquid is stored inside the inner tank 101. A substrate group consisting of one or more substrates W is immersed in the inner tank 101. The upper part of the outer tank 102 is open, and the outer tank 102 is arranged around the upper part of the inner tank 101. The etching liquid overflowing from the inner tank 101 flows into the outer tank 102.

[0048] In addition, the chemical solution tank 41 includes a phosphoric acid aqueous solution supply unit 103 , a silicon supply unit 104 , and a DIW supply unit 105 .

[0049] The phosphoric acid aqueous solution supply unit 103 includes a phosphoric acid aqueous solution supply source 131 , a phosphoric acid aqueous solution supply line 132 , and a flow rate regulator 133 .

[0050] The phosphoric acid aqueous solution supply source 131 supplies phosphoric acid aqueous solution concentrated to a desired concentration. The phosphoric acid aqueous solution supply line 132 connects the phosphoric acid aqueous solution supply source 131 and the outer tank 102 to supply the phosphoric acid aqueous solution from the phosphoric acid aqueous solution supply source 131 to the outer tank 102 .

[0051] The flow regulator 133 is provided in the phosphoric acid aqueous solution supply line 132, and regulates the supply amount of the phosphoric acid aqueous solution supplied to the outer tank 102. The flow regulator 133 is composed of an on-off valve, a flow control valve, a flow meter, and the like.

[0052] The silicon supply unit 104 includes a silicon supply source 141 , a silicon supply line 142 , and a flow rate regulator 143 .

[0053] The silicon supply source 141 is a tank for storing an aqueous solution of a silicon-containing compound. The silicon supply line 142 connects the silicon supply source 141 and the outer tank 102 to supply the aqueous solution of the silicon-containing compound from the silicon supply source 141 to the outer tank 102 .

[0054] The flow regulator 143 is provided on the silicon supply line 142 to adjust the supply amount of the silicon-containing compound aqueous solution supplied to the outer tank 102. The flow regulator 143 is composed of an on-off valve or a flow control valve, a flow meter, etc. By adjusting the supply amount of the silicon-containing compound aqueous solution by the flow regulator 143, the silicon concentration of the etching solution is adjusted.

[0055] The DIW supply unit 105 includes a DIW supply source 151, a DIW supply line 152, and a flow rate regulator 153. The DIW supply unit 105 supplies DIW (DeIonized Water) to the outer tank 102 to replenish water evaporated by heating the etching solution.

[0056] The DIW supply line 152 connects the DIW supply source 151 and the outer tank 102 , and is used to supply DIW at a predetermined temperature from the DIW supply source 151 to the outer tank 102 .

[0057] The flow regulator 153 is provided on the DIW supply line 152 to adjust the supply amount of DIW supplied to the outer tank 102. The flow regulator 153 is composed of an on-off valve or a flow control valve, a flow meter, etc. By adjusting the supply amount of DIW by the flow regulator 153, the temperature, phosphoric acid concentration, and silicon concentration of the etching solution are adjusted.

[0058] The chemical solution tank 41 includes a circulation unit 106. The circulation unit 106 circulates the etching solution between the inner tank 101 and the outer tank 102. The circulation unit 106 includes a circulation line 161, a plurality of processing solution supply nozzles 162, a filter 163, a heater 164, and a pump 165.

[0059] The circulation line 161 connects the outer tank 102 and the inner tank 101 . One end of the circulation line 161 is connected to the outer tank 102 , and the other end of the circulation line 161 is connected to a plurality of processing liquid supply nozzles 162 disposed inside the inner tank 101 .

[0060] The filter 163, the heater 164, and the pump 165 are provided in the circulation line 161. The filter 163 removes impurities from the etching liquid flowing in the circulation line 161. The heater 164 heats the etching liquid flowing in the circulation line 161 to a temperature suitable for etching processing. The pump 165 sends the etching liquid in the outer tank 102 to the circulation line 161. The pump 165, the heater 164, and the filter 163 are provided in this order from the upstream side.

[0061] The circulation unit 106 delivers the etching liquid from the outer tank 102 to the inner tank 101 via the circulation line 161 and the plurality of processing liquid supply nozzles 162. The etching liquid delivered to the inner tank 101 overflows from the inner tank 101 and flows out again to the outer tank 102. In this way, the etching liquid circulates between the inner tank 101 and the outer tank 102.

[0062] Furthermore, the circulation unit 106 may heat the etching liquid by the heater 164 to bring the etching liquid into a boiling state.

[0063] return Figure 1 The second interface unit 5 is arranged on the positive side of the immersion processing unit 4 in the Y-axis direction. The second interface unit 5 transports the substrate group of the substrate W between the immersion processing unit 4 and the single-wafer processing unit 6. The second interface unit 5 has a standby tank 51, a first transport mechanism 52 (an example of a first transport unit), a delivery unit 53 (an example of a first delivery unit), and a second transport mechanism 54 (an example of a second transport unit).

[0064] The standby tank 51 can accommodate substrates W corresponding to at least one substrate group arranged in a vertical posture. A support device 51 a that supports one or more substrates W forming a substrate group in a vertical posture is fixed in the standby tank 51 .

[0065] The standby tank 51 stores a treatment liquid (hereinafter also referred to as "second rinse liquid") for rinsing the immersed substrate group. The second rinse liquid is, for example, DIW (deionized water). The substrate W is supported in the second rinse liquid by the support device 51a until it is lifted from the second rinse liquid by the second transport mechanism 54.

[0066] The first transport mechanism 52 includes one or more and less than the number of liquid processing units 62 (for example, less than four) holding devices that respectively hold more than one and less than the number of liquid processing units 62 (for example, less than four) of substrates included in the substrate group. The first transport mechanism 52 is, for example, composed of a multi-joint robot, and uses the holding devices to transport the substrate group including one or more substrates W at a time.

[0067] The first conveying mechanism 52 receives one substrate group included in a batch conveyed to the immersion treatment section 4 by the batch conveying mechanism 70 described later using a holding tool, and immerses the substrate group in the treatment liquid of the immersion treatment section 4. In addition, the first conveying mechanism 52 takes out the substrate group from the immersion treatment section 4 using a holding tool, conveys the substrate group to the standby tank 51, and immerses the substrate group in the second rinse liquid of the standby tank 51.

[0068] The interface 53 is adjacent to the single-chip processing section 6 and is arranged on the negative side of the second interface section 5 in the X-axis direction. The interface 53 is configured to accommodate one or more substrates W forming the substrate group in a horizontal posture. The interface 53 receives the substrate W from the second conveying mechanism 54 and temporarily stores it until it is handed over to the single-chip processing section 6. The interface 53 accommodates the substrate W immersed in the second rinsing liquid in the standby tank 51. It is preferred that the substrate W accommodated in the interface 53 is in a state where the surface is wetted by the second rinsing liquid. In this case, the surface tension of the second rinsing liquid does not act on the substrate W, and the collapse of the concave-convex pattern of the substrate W can be suppressed. The interface 53 can also be configured as a multi-layer (for example, three-layer) in the vertical direction (Z-axis direction).

[0069] The second conveying mechanism 54 has one or more and less than the number of liquid processing units 62 (for example, less than four) for holding each of the substrates included in the substrate group. The second conveying mechanism 54 is composed of, for example, a multi-joint robot, and uses the holding device to transport the substrate group including one or more substrates W at a time. In addition, the second conveying mechanism 54 can change the posture of the one or more substrates W included in the substrate group from a vertical posture to a horizontal posture during the conveyance.

[0070] The second transport mechanism 54 takes out the substrate group immersed in the standby tank 51 from the standby tank 51 using a holder, changes the posture of one or more substrates W included in the taken out substrate group from a vertical posture to a horizontal posture, and then carries them into the delivery portion 53 .

[0071] The single-wafer processing unit 6 is arranged on the negative side of the second interface unit 5 in the X-axis direction and on the positive side of the Y-axis direction of the loading and unloading unit 2 and the first interface unit 3. The single-wafer processing unit 6 can also be arranged in multiple layers (for example, three layers) in the vertical direction (Z-axis direction). The single-wafer processing unit 6 processes the substrates W one by one. The single-wafer processing unit 6 has a third conveying mechanism 61 (an example of the third conveying unit) and a plurality of (four in this case) liquid processing units 62.

[0072] The third transport mechanism 61 includes a holding body for holding the substrate W. The third transport mechanism 61 can move in the horizontal direction (X-axis direction) and rotate around the vertical axis, and uses the holding body to transport the substrates W one by one between the interface 53, the liquid processing section 62, and the interface 33. Specifically, the third transport mechanism 61 transports the substrate W from the interface 53 to the liquid processing section 62, and transports the substrate W from the liquid processing section 62 to the interface 33.

[0073] The liquid processing unit 62 is arranged on the positive side in the X-axis direction and the positive side in the Y-axis direction of the single-wafer processing unit 6. The plurality of liquid processing units 62 are arranged in a row in the X-axis direction. The distances between the plurality of liquid processing units 62 and the interface 53 are different. The liquid processing unit 62 processes a substrate W using a chemical solution and dries the processed substrate W.

[0074] Here, refer to Figure 3 The structure of the liquid processing unit 62 will be described. Figure 3 It is a diagram showing the structure of the liquid processing unit 62 according to the embodiment.

[0075] like Figure 3 As shown, the liquid processing unit 62 includes a chamber 520 , a substrate rotating unit 530 , a chemical solution supply unit 540 , and a recovery cup 560 .

[0076] The chamber 520 accommodates a substrate rotating unit 530, a chemical solution supply unit 540, and a recovery cup 560. A fan filter unit (FFU) 521 is provided on the top of the chamber 520. The FFU 521 is used to form a downward flow in the chamber 520.

[0077] The substrate rotating unit 530 includes a holding unit 531, a support unit 532, and a driving unit 533, and holds and rotates the substrate W. The holding unit 531 sucks the bottom surface of the substrate W to keep the substrate W horizontal. In addition, the holding unit 531 is not limited to holding the bottom surface of the substrate W, and can also hold the end of the substrate W.

[0078] The support part 532 is a member extending in the vertical direction, and the base end of the support part 532 is rotatably supported by the driving part 533, and the front end of the support part 532 horizontally supports the holding part 531. The driving part 533 rotates the support part 532 about the vertical axis.

[0079] The substrate rotating unit 530 rotates the support column 532 by using the driving unit 533 to rotate the holding unit 531 supported by the support column 532 , thereby rotating the substrate W held by the holding unit 531 .

[0080] The chemical liquid supply unit 540 supplies SC1 (a mixed solution of ammonia, hydrogen peroxide, and water) and DIW as chemical liquids to the surface of the substrate W. The chemical liquid supply unit 540 includes a first nozzle 541 and a second nozzle 542, arms 543 and 544 that respectively support the first nozzle 541 and the second nozzle 542 in a horizontal manner, and rotating and lifting mechanisms 545 and 546 that respectively rotate and lift the arms 543 and 544.

[0081] The first nozzle 541 is connected to an SC1 supply source 549 via a valve 547 and a flow rate regulator 548. In addition, the second nozzle 542 is connected to a DIW supply source 552 via a valve 550 and a flow rate regulator 551.

[0082] The first nozzle 541 supplies SC1 supplied from the SC1 supply source 549 to the substrate W. The second nozzle 542 supplies DIW supplied from the DIW supply source 552 to the substrate W.

[0083] The recovery cup 560 is configured to surround the holding portion 531 and capture SC1, DIW, etc. scattered from the substrate W due to the rotation of the holding portion 531. A drain port 561 is formed at the bottom of the recovery cup 560, and the SC1, DIW, etc. captured by the recovery cup 560 are discharged to the outside of the liquid processing unit 62 from the drain port 561.

[0084] In addition, an exhaust port 562 for exhausting the gas supplied from the FFU 521 to the outside of the liquid processing unit 62 is formed at the bottom of the recovery cup 560 .

[0085] The liquid processing unit 62 is configured as described above. After the holding unit 531 holds the lower surface of the substrate W by suction, the holding unit 531 is rotated by using the driving unit 533 to rotate the substrate W. Then, the liquid processing unit 62 ejects SC1 from the first nozzle 541 toward the rotating substrate W. Thereafter, the liquid processing unit 62 ejects DIW from the second nozzle 542 toward the rotating substrate W. Thus, the SC1 attached to the substrate W is washed away by the DIW. Then, the liquid processing unit 62 increases the rotation speed of the substrate W to shake off the DIW on the substrate W so that the substrate W is dried.

[0086] The control device 9 is, for example, a computer, and includes a control unit 91 and a storage unit 92. The storage unit 92 stores programs for controlling various processes executed in the substrate processing system 1. The control unit 91 includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, and various circuits. The control unit 91 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 92.

[0087] In addition, the program may be recorded in a computer-readable storage medium and installed from the storage medium to the storage unit 92 of the control device 9. Examples of computer-readable storage media include a hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), and a memory card.

[0088] <Specific Operation of Substrate Processing System 1>

[0089] Next, refer to Figure 4 The process of processing performed by the substrate processing system 1 will be described. Figure 4 1 is a flowchart showing a procedure of processing executed by the substrate processing system 1 according to the embodiment. Figure 4 Each of the processes shown is executed under the control of the control unit 91 .

[0090] In addition, here, as an example, a series of substrate processing procedures performed on one substrate group including one or more substrates W are shown.

[0091] like Figure 4 As shown, in the substrate processing system 1 , the substrate transport mechanism 31 takes out a plurality of substrates W from each of the two cassettes C, and forms a batch from the plurality of (eg, 25) substrates W accommodated in each cassette C (step S101 ).

[0092] Reference Figure 1 The processing of step S101 will be described below. First, the cassette transport mechanism 24 takes out the cassette C from the load port 21 and places it on the loader 23. Then, the substrate transport mechanism 31 takes out a plurality of substrates W from the cassette C placed on the loader 23 and changes the posture of the taken-out plurality of substrates W from the horizontal posture to the vertical posture, and places the plurality of substrates W on the batch forming section 32. This operation is repeated twice, and a batch is formed in the batch forming section 32.

[0093] Next, the substrate processing system 1 performs immersion processing on the substrate group included in the formed batch (step S102 ).

[0094] Specifically, the batch conveying mechanism 70 receives the batch from the batch forming unit 32 and conveys it to the top of the chemical solution tank 41 of the immersion treatment unit 4. Next, the first conveying mechanism 52 receives one substrate group included in the batch conveyed to the top of the chemical solution tank 41 from the batch conveying mechanism 70. Then, the first conveying mechanism 52 immerses the received substrate group in the etching liquid stored in the chemical solution tank 41. Thereafter, the first conveying mechanism 52 takes the substrate group out of the chemical solution tank 41 and immerses it in the first rinse liquid stored in the rinse liquid tank 42. Thus, the etching liquid attached to the substrate W is rinsed off by the first rinse liquid stored in the rinse liquid tank 42.

[0095] Next, the substrate processing system 1 performs the first transport process (step S103). The first transport process is a process in which the first transport mechanism 52 and the second transport mechanism 54 take out the substrate group from the immersion processing section 4 and transport it to the delivery section 53 via the standby tank 51. Specifically, the first transport mechanism 52 takes out the substrate group supported by the support device 42a inside the rinse liquid tank 42 from the rinse liquid tank 42, and transports the taken-out substrate group to the standby tank 51 so that it is immersed in the second rinse liquid stored in the standby tank 51. Then, the second transport mechanism 54 takes out the substrate group supported by the support device 51a inside the standby tank 51 from the standby tank 51. After that, the second transport mechanism 54 changes the posture of one or more substrates W included in the substrate group from a vertical posture to a horizontal posture, and then places it on the delivery section 53.

[0096] Next, the substrate processing system 1 performs a second transport process (step S104). The second transport process is a process in which the third transport mechanism 61 takes out the substrates W one by one from the interface 53 and transports them to the liquid processing unit 62. Specifically, the third transport mechanism 61 takes out the substrates W one by one from the interface 53 and delivers the taken-out substrates W to the substrate rotating unit 530 in the liquid processing unit 62.

[0097] Next, the substrate processing system 1 performs a single-wafer process in the liquid processing unit 62 (step S105). Specifically, the liquid processing unit 62 supplies SC1 to the upper surface of the substrate W while rotating the holding unit 531 of the substrate rotating unit 530. Next, the liquid processing unit 62 supplies DIW to the upper surface of the substrate W. Thus, the SC1 attached to the substrate W is washed away by the DIW. After that, the liquid processing unit 62 performs a drying process in which the DIW on the substrate W is shaken off by increasing the rotation speed of the substrate W to dry the substrate W.

[0098] Next, the substrate processing system 1 performs a third transport process (step S106). The third transport process is a process in which the third transport mechanism 61 takes out the substrate W after the drying process from the liquid processing section 62 and transports it to the delivery section 33. Specifically, the third transport mechanism 61 takes out the substrate W from the liquid processing section 62 and places the taken-out substrate W on the delivery section 33.

[0099] Next, the substrate processing system 1 performs a carry-out process (step S107) of taking out the substrate W from the interface 33 and storing it in the cassette C. Specifically, the substrate transport mechanism 31 takes out the substrate W from the interface 33 and stores it in the cassette C placed on the loader 23. When the carry-out process is completed, a series of substrate processing is completed.

[0100] In the substrate processing system 1 , the above-described series of substrate processing is sequentially performed on a plurality of substrate groups including one or more substrates W.

[0101] Here, if the third conveying mechanism 61 is conveying the substrates W of other substrate groups from the transfer portion 53 at the moment when the first conveying process is to be performed on the substrate group including the substrate W after the immersion process, the substrate W after the immersion process will wait in the standby tank 51 until the conveying process of the substrates W of other substrate groups is completed.

[0102] Furthermore, when the plurality of substrates W wait in the standby slot 51 for different periods of time, there is a possibility that variations in processing characteristics between the substrates W will increase.

[0103] Therefore, in the embodiment, the start time of the immersion process (step S102) for the subsequent substrate group is determined based on the accumulated time of the second transport process, the single wafer process, and the third transport process (steps S104 to S106) for the previous substrate group.

[0104] Thus, it is possible to suppress the third transport mechanism 61 from performing the transport process on the substrate W of another substrate group from the interface 53 at the time when the first transport process is to be performed on the substrate group including the immersion-processed substrate W. In other words, it is possible to suppress the generation of the waiting time of the immersion-processed substrate W, and reduce the difference in the waiting time between the immersion-processed substrates W. Therefore, according to the substrate processing system 1 involved in the embodiment, the deviation of the processing characteristics between the substrates W can be suppressed.

[0105] <Details of the Adjustment Process for the Start Timing of the Immersion Process for the Subsequent Substrate Group>

[0106] Reference Figure 5 The following specifically describes the process of adjusting the start timing of the immersion process for the subsequent substrate group. Figure 5 This is a diagram showing an example of a timing chart for explaining a process of adjusting the start timing of the immersion process for a later substrate group. Figure 5 The processing shown is executed according to the control of the control unit 91.

[0107] In the following, the substrate group that is released first is referred to as "substrate group A", and the substrate group that is released later is referred to as "substrate group B". Figure 52 shows an example of a timing chart in which a series of substrate processes for substrate group A and a series of substrate processes for substrate group B are performed in parallel.

[0108] For example, it is assumed that the immersion process for substrate group B can be started while the third transport process for substrate group A is being performed. In this case, if the immersion process for substrate group B is started immediately, the third transport process for substrate group A and the completion time of the first transport process for substrate group B may overlap.

[0109] Therefore, before starting the immersion treatment for the substrate group B, the control unit 91 determines the start time of the immersion treatment for the substrate group B through the following procedure.

[0110] First, the control unit 91 calculates the cumulative time of the second conveying process, the single-chip process, and the third conveying process for the substrate group A. Specifically, the control unit 91 refers to the specification information including the conveying speed of the third conveying mechanism 61 used in the second conveying process and the third conveying process to obtain the processing time of the second conveying process and the third conveying process. In addition, the control unit 91 refers to the processing process information of a series of substrate processes to obtain the processing time of the single-chip process. The specification information and the processing process information are stored in the storage unit 92, for example. Then, the control unit 91 can calculate the cumulative time by adding the processing time of the second conveying process, the single-chip process, and the third conveying process for the substrate group A. Thus, the control unit 91 can determine the time point when the elapsed time from the start time t1 of the second conveying process for the substrate group A reaches the cumulative time as the completion time t2 of the third conveying process for the substrate group A.

[0111] Next, the control unit 91 determines the expected completion time of the first transport process for the substrate group B, assuming that the immersion process for the substrate group B has been started, based on the processing time of the immersion process and the first transport process for the substrate group B. Specifically, the control unit 91 obtains the processing time of the first transport process by referring to the specification information including the transport speed of the first transport mechanism 52 and the second transport mechanism 54 used in the first transport process. In addition, the control unit 91 obtains the processing time of the immersion process by referring to the processing recipe information of a series of substrate processes. Then, the control unit 91 determines the time point after the processing time of the immersion process and the first transport process has passed since the time when the immersion process for the substrate group B can be started, as the expected completion time t3 of the first transport process for the substrate group B.

[0112] Then, the control unit 91 determines the time when the interval Δt between the completion time t2 of the third transport process for the substrate group A and the expected completion time t3 of the first transport process for the substrate group B is within a predetermined range as the start time t4 of the immersion process for the substrate group B. Specifically, the control unit 91 determines the start time t4 of the immersion process for the substrate group B so that the interval Δt is within the predetermined range.

[0113] As described above, in the substrate processing system 1 according to the embodiment, the start time of the immersion processing for the substrate group B is determined so that the period of the third transport processing for the substrate group A and the completion time of the first transport processing for the substrate group B do not overlap.

[0114] Specifically, the control unit 91 starts the immersion process for the substrate group B at a time when the interval Δt between the completion time t2 of the third transport process for the substrate group A and the estimated completion time t3 of the first transport process for the substrate group B is within a predetermined range.

[0115] Thus, it is possible to suppress the third transport mechanism 61 from performing the transport process on the substrate W of another substrate group from the interface 53 at the time when the first transport process is to be performed on the substrate group including the immersion-processed substrate W. In other words, it is possible to suppress the generation of the waiting time of the immersion-processed substrate W, and reduce the difference in the waiting time between the immersion-processed substrates W. Therefore, according to the substrate processing system 1 involved in the embodiment, the deviation of the processing characteristics between the substrates W can be suppressed.

[0116] <Regarding the Adjustment Process of the Substrate Transport Speed ​​in the Second Transport Process>

[0117] In addition, in the substrate processing system 1, in the second transport process, the substrate W is transported from the interface 53 to each of the plurality of liquid processing sections 62. The distances between the plurality of liquid processing sections 62 and the interface 53 are different. Therefore, assuming that the transport speed of the substrate W is the same for each of the plurality of liquid processing sections 62, the transport time of the plurality of substrates W transported from the interface 53 to each of the plurality of liquid processing sections 62 varies. If the transport time from the interface 53 to the liquid processing section 62 varies, the surface state of the substrate W varies, and as a result, the processing characteristics of the single-wafer processing (liquid processing) between the substrates W may vary.

[0118] Therefore, in the substrate processing system 1 according to the embodiment, in the second transport process, when the substrate W is transported from the interface 53 to the plurality of liquid processing sections 62, the third transport mechanism 61 is controlled to adjust the transport speed of the substrate W based on the distance between the interface 53 and each liquid processing section 62. For example, the control section 91 reduces the transport speed of the substrate W transported to the liquid processing section 62 whose distance from the interface 53 is relatively small, and increases the transport speed of the substrate W transported to the liquid processing section 62 whose distance from the interface 53 is relatively large.

[0119] Thus, the difference in the transport time of the plurality of substrates W transported from the interface 53 to each of the plurality of liquid processing sections 62 can be reduced. Therefore, according to the substrate processing system 1 involved in the embodiment, the deviation in the processing characteristics of the single-wafer processing (liquid processing) between the substrates W caused by the deviation in the transport time from the interface 53 to the liquid processing section 62 can be suppressed.

[0120] <Modification>

[0121] In the above-mentioned embodiment, the case where the liquid processing unit 62 performs a drying process using a so-called spin drying method is exemplified, but the drying method is not limited thereto. For example, the substrate W may be dried by supplying a liquid containing a hydrophobizing agent to the upper surface of the substrate W to dry the substrate W through an SMD (Surface Molecular Dry) process. In addition, for example, the substrate W may be dried using a drying liquid such as IPA (isopropyl alcohol).

[0122] In addition, for example, a supercritical fluid may be used to dry the substrate W. In this case, the single-wafer processing unit 6 may also include: a liquid processing unit that processes a substrate W using a liquid; and a drying processing unit that dries a substrate W using a supercritical fluid. Furthermore, the third transport mechanism 61 may also take out the substrate W from the drying processing unit and transport it to the delivery unit 33 after taking out the substrate W from the liquid processing unit and transporting it to the drying processing unit.

[0123] As described above, the substrate processing device involved in the embodiment (as an example, the substrate processing system 1) includes an immersion processing unit (as an example, the immersion processing unit 4), a standby tank (as an example, the standby tank 51), a first conveying unit (as an example, the first conveying mechanism 52), a first interface (as an example, the interface 53), a second conveying unit (as an example, the second conveying mechanism 54), a single-wafer processing unit (as an example, the single-wafer processing unit 6), a second interface (as an example, the interface 33), a third conveying unit (as an example, the third conveying mechanism 61), and a control unit (as an example, the control unit 91). The immersion processing unit is used to immerse a substrate group including one or more substrates (as an example, substrate W) in a processing liquid (as an example, an etching liquid, a first rinse liquid) to process the substrate group. The standby tank is used to immerse the substrate group processed in the immersion processing unit in a rinse liquid (as an example, the second rinse liquid) and put the substrate group on standby. The first conveying unit conveys the substrate group from the immersion processing unit to the standby tank. The first interface can accommodate the substrate group immersed in the rinse liquid in the standby tank. The second conveying unit conveys the substrate group from the standby tank to the first interface. The single-chip processing unit processes the substrates included in the substrate group one by one. The second interface can accommodate the substrates processed in the single-chip processing unit. The third conveying unit conveys the substrates one by one between the first interface, the single-chip processing unit and the second interface. The control unit performs a series of substrate processing by controlling each unit, and the series of substrate processing includes an immersion processing performed by the immersion processing unit, a first conveying processing of conveying the substrate group from the immersion processing unit via the standby tank to the first interface, a second conveying processing of conveying the substrate from the first interface to the single-chip processing unit, a single-chip processing performed by the single-chip processing unit, and a third conveying processing of conveying the substrate from the single-chip processing unit to the second interface. The control unit determines the start time of the immersion process for the next substrate group (for example, substrate group B) based on the accumulated time of the second transport process, the single wafer process, and the third transport process for the substrate group (for example, substrate group A).

[0124] Specifically, the control unit starts the immersion treatment for the next substrate group at a start time when the interval (as an example, the interval Δt) between the time when the elapsed time from the start of the second transport treatment for the substrate group reaches the accumulated time and the time when the first transport treatment for the next substrate group is expected to be completed when assuming that the immersion treatment for the next substrate group has started is within a specified range.

[0125] Therefore, according to the substrate processing apparatus according to the embodiment, in the substrate processing apparatus including the immersion processing section and the single-wafer processing section, it is possible to suppress variations in processing characteristics between substrates.

[0126] It should be understood that the embodiments disclosed herein are illustrative in all respects and are not restrictive. In fact, the above embodiments can be implemented in a variety of ways. In addition, the above embodiments can also be omitted, replaced, and changed in various ways without departing from the attached claims and their gist.

[0127] Description of Reference Numerals

[0128] 1: substrate processing system; 2: loading and unloading section; 3: first interface section; 4: immersion processing section; 5: second interface section; 6: single-wafer processing section; 7: batch conveying section; 9: control device; 21: loading port; 22: storage cabinet; 23: loader; 24: box conveying mechanism; 31: substrate conveying mechanism; 32: batch forming section; 33: handover section; 41: chemical liquid tank; 41a: supporting device; 42: rinse liquid tank; 42a: supporting device; 51: standby tank; 51a: supporting device; 52: first conveying mechanism; 53: handover section; 54: second conveying mechanism; 61: third conveying mechanism; 62: liquid processing section; 70: batch conveying mechanism; 71: holding body; 72: rail; 73: moving body; 91: control section; 92: storage section; W: substrate.

Claims

1. A substrate processing device, comprising: An immersion treatment section for treating a substrate group including one or more substrates by immersing the substrate group in a treatment liquid; A standby tank for immersing the substrate group processed in the immersion treatment section in a rinse liquid and placing the substrate group on standby; a first conveying unit for conveying the substrate group from the immersion treatment unit to the standby tank; a first interface portion capable of accommodating the substrate group immersed in the rinse liquid in the standby tank; a second conveying unit for conveying the substrate group from the standby tank to the first delivery unit; A single-wafer processing unit, which processes the substrates included in the substrate group one by one; A second interface portion, which can receive the substrate processed in the single-wafer processing portion; a third conveying unit, which conveys the substrates one by one between the first interface, the single-wafer processing unit, and the second interface; as well as a control unit that controls each unit to execute a series of substrate processing, the series of substrate processing including an immersion processing performed by the immersion processing unit, a first transport processing of transporting the substrate group from the immersion processing unit to the first interface via the standby tank, a second transport processing of transporting the substrate from the first interface to the single-wafer processing unit, a single-wafer processing performed by the single-wafer processing unit, and a third transport processing of transporting the substrate from the single-wafer processing unit to the second interface, The control unit determines a start time of the immersion process for the next substrate group based on a cumulative time of the second transport process, the single-wafer process, and the third transport process for the substrate group.

2. The substrate processing apparatus according to claim 1, wherein: The control unit starts the immersion treatment for the next substrate group at a start time when the interval between the time when the elapsed time from the start of the second transport treatment for the substrate group reaches the accumulated time and the time when the first transport treatment for the next substrate group is expected to be completed when assuming that the immersion treatment for the next substrate group has started is within a specified range.

3. The substrate processing apparatus according to claim 1, wherein: further comprising a plurality of the single chip processing units at different distances from the first interface, When the substrate is transported from the first interface to each of the plurality of single-wafer processing units in the second transport process, the control unit controls the third transport unit to adjust a transport speed of the substrate based on a distance between the first interface and each of the single-wafer processing units.

4. The substrate processing apparatus according to claim 1, wherein: The single-wafer processing unit includes a plurality of liquid processing units for processing one of the substrates using a chemical liquid. The first conveying section and the second conveying section each include one or more and less than the number of the liquid processing sections for respectively holding one or more and less than the number of the liquid processing sections of substrates included in the substrate group.

5. The substrate processing apparatus according to claim 4, wherein: The immersion treatment unit comprises: a treatment tank storing the treatment liquid; and a supporting device, which is fixed in the processing tank and is used to support the substrate included in the substrate group, The standby slot has a supporting device, which is fixed in the standby slot and is used to support the substrate included in the substrate group. The first transport unit uses the holding tool to take out the substrate group from the processing tank and transport it to the standby tank. The second transport unit takes out the substrate group from the standby tank using the holding tool and transports the substrate group to the first delivery unit.

6. The substrate processing apparatus according to claim 1, wherein: further comprising a batch conveying unit for conveying a batch including a plurality of the substrate groups to the immersion treatment unit, The first conveying unit receives one of the substrate groups included in the batch conveyed to the immersion processing unit by the batch conveying unit from the batch conveying unit and immerses the substrate group in the processing liquid of the immersion processing unit. The first conveying unit takes out the substrate group from the immersion processing unit and conveys it to the standby tank and immerses the substrate group in the rinse liquid of the standby tank.

7. The substrate processing apparatus according to claim 1, wherein: The single-wafer processing unit is a liquid processing unit that processes one of the substrates using a chemical liquid and dries the processed substrate.

8. The substrate processing apparatus according to claim 1, wherein: having a plurality of the single-chip processing units, The plurality of single-chip processing units include: a liquid processing unit that processes one of the substrates using liquid; and a drying processing unit, which uses a supercritical fluid to dry one of the substrates; After the third transport unit takes out the substrate from the liquid processing unit and transports it to the drying processing unit, the third transport unit takes out the substrate from the drying processing unit and transports it to the second delivery unit.

9. A substrate processing method, The method includes executing a series of substrate processing using a substrate processing device, wherein the substrate processing device includes: an immersion processing unit for immersing a substrate group including one or more substrates in a processing liquid to process the substrate group; A standby tank, which is used to immerse the substrate group processed in the immersion treatment section in the rinse liquid and put the substrate group on standby; a first conveying section, which conveys the substrate group from the immersion treatment section to the standby tank; a first delivery section, which can accommodate the substrate group immersed in the rinse liquid; a second conveying section, which conveys the substrate group from the standby tank to the first delivery section; a single-wafer processing unit, which processes the substrates included in the substrate group one by one; and a second interface, which can receive the substrates processed in the single-wafer processing unit; and a third conveying section that conveys the substrates one by one between the first interface, the single-wafer processing section, and the second interface, wherein the series of substrate processing includes an immersion processing performed by the immersion processing section, a first conveying processing of conveying the substrate group from the immersion processing section to the first interface via the standby tank, a second conveying processing of conveying the substrates from the first interface to the single-wafer processing section, a single-wafer processing performed by the single-wafer processing section, and a third conveying processing of conveying the substrates from the single-wafer processing section to the second interface, The execution process includes the following steps: a determining step of determining a start time of the immersion process for the next substrate group based on a cumulative time of the second transport process, the single wafer process, and the third transport process for the substrate group; and A starting step of starting the immersion process for the next substrate group at the starting time determined in the determining step.

Images