Contact resistivity determination method and device and computer readable storage medium

Abstract

The invention provides a contact resistivity determination method and device and a computer readable storage medium, relates to the technical field of solar cells, and can determine the contact resistivity. The method comprises the steps of obtaining a plurality of resistance values; the resistance value is the resistance value between a first electrode on the first surface of the target semiconductor and a second electrode on the second surface of the target semiconductor, a plurality of first electrodes are distributed on the first surface, the first electrodes are circular electrodes, the radiuses of the plurality of first electrodes are different, and the orthographic projection of the target first electrode is in the orthographic projection of the second electrode; the target first electrode is any one of the multiple first electrodes, and multiple expansion resistance values are obtained; and performing linear fitting based on the area of each first electrode, the resistance value corresponding to each first electrode and the extended resistance value corresponding to each first electrode, and determining the slope of a linear fitting line as the contact resistivity between the first electrode and the silicon substrate.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a contact resistivity determination method, device and computer-readable storage medium. Background Art

[0002] Contact resistivity is a physical quantity used to measure the degree of resistance of the contact part between two conductors (for example, semiconductors and electrodes). It reflects the resistance per unit contact area caused by incomplete contact or the presence of dirt, oxide layer, etc. on the contact surface.

[0003] Contact resistivity is one of the key indicators for measuring electrical connection performance. In solar cells, how to determine the contact resistivity between electrodes and semiconductor materials is a crucial issue. Summary of the invention

[0004] The present application provides a contact resistivity determination method, device and computer-readable storage medium, which can determine the contact resistivity.

[0005] In order to achieve the above objectives, this application adopts the following technical solutions: In a first aspect, a contact resistivity determination method is provided, the method comprising: obtaining a plurality of resistance values; the resistance value is a resistance value between a first electrode on a first surface of a target semiconductor and a second electrode on a second surface of the target semiconductor, the first surface is opposite to the second surface, a plurality of first electrodes are distributed on the first surface, the plurality of resistance values ​​correspond one-to-one to the plurality of first electrodes, the first electrode is a circular electrode, the radii of the plurality of first electrodes are different, the orthographic projection of the target first electrode is within the orthographic projection of the second electrode, the target first electrode is any one of the plurality of first electrodes, the target semiconductor comprises a silicon substrate, a first doping layer is included between the silicon substrate and the first electrode, a second doping layer is included between the silicon substrate and the second electrode, and the doping types of the first doping layer, the second doping layer and the silicon substrate are the same; obtaining a plurality of extended resistance values; the plurality of extended resistance values ​​correspond one-to-one to the plurality of first electrodes; performing a linear fit based on the area of ​​each first electrode, the resistance value corresponding to each first electrode and the extended resistance value corresponding to each first electrode, and determining the slope of the linear fit line as the contact resistivity between the first electrode and the silicon substrate.

[0006] Based on this scheme, since a plurality of first electrodes are distributed on the first surface of the target semiconductor, a second electrode is arranged on the second surface of the target semiconductor opposite to the first surface, the plurality of first electrodes are circular electrodes with different radii, the orthographic projection of any first electrode is within the orthographic projection of the second electrode, the first doping layer, the second doping layer and the silicon substrate of the target semiconductor have the same doping type, the resistance value and the extended resistance value between the first electrode and the second electrode are affected by the area of ​​the first electrode, and the contact resistivity between the first electrode and the second electrode is not affected by the area of ​​the first electrode. Therefore, the area of ​​the first electrode can be considered as an independent variable, the contact resistivity between the first electrode and the target semiconductor can be considered as a constant, and the resistance value and the extended resistance value corresponding to the first electrode can be considered as dependent variables. After obtaining a plurality of resistance values ​​corresponding to the plurality of first electrodes one by one and a plurality of extended resistance values ​​corresponding to the plurality of first electrodes one by one, a linear fitting is performed based on the area of ​​each first electrode, the resistance value corresponding to each first electrode and the extended resistance value corresponding to each first electrode by a linear fitting method, so that the slope of the linear fitting line can be determined as the contact resistivity between the first electrode and the silicon substrate.

[0007] In combination with the first aspect, in certain embodiments of the first aspect, performing linear fitting based on the area of ​​each first electrode, the resistance value corresponding to each first electrode, and the extended resistance value corresponding to each first electrode includes: performing linear fitting based on a first relationship: First Relationship: in, represents the resistance value corresponding to the first electrode, represents the extended resistance value corresponding to the first electrode, A represents the area of ​​the first electrode, is the contact resistivity, Indicates the residual resistance value.

[0008] In combination with the first aspect, in some embodiments of the first aspect, the method further includes: determining the intercept of the linear fitting line on the target axis as the residual resistance value; the target axis corresponds to the target difference, and the target difference is the difference between the resistance value corresponding to the first electrode and the extended resistance value corresponding to the first electrode. In combination with the first aspect, in some embodiments of the first aspect, obtaining multiple extended resistance values ​​includes: for each first electrode among the multiple first electrodes, determining the extended resistance value corresponding to the first electrode according to the second relationship: Second relationship: in, represents the extended resistance value, d represents the diameter of the first electrode, represents the resistivity of the target semiconductor and t represents the thickness of the target semiconductor.

[0009] In combination with the first aspect, in certain embodiments of the first aspect, the distance between the target point of the target first electrode and the target edge of the first surface is greater than or equal to 10 mm; the target point is any point on the circumferential edge of the first electrode, and the target edge is any edge of the first surface. In combination with the first aspect, in certain embodiments of the first aspect, the radius of the target first electrode is greater than or equal to 0.5 mm, and the radius of the target first electrode is less than or equal to 5 mm.

[0010] In combination with the first aspect, in certain embodiments of the first aspect, the distance between the target point of the target first electrode and the target point of the non-target first electrode is greater than or equal to 10 mm; the non-target first electrode is any first electrode among the multiple first electrodes except the target first electrode, and the target point is any point on the circumferential edge of the first electrode.

[0011] In combination with the first aspect, in certain embodiments of the first aspect, the on-chip resistance uniformity of the target semiconductor is less than or equal to a preset uniformity threshold.

[0012] In combination with the first aspect, in certain embodiments of the first aspect, the number of the plurality of first electrodes is greater than or equal to 5, and the number of the plurality of first electrodes is less than or equal to 60.

[0013] In combination with the first aspect, in certain embodiments of the first aspect, the centers of the plurality of first electrodes are located on a straight line.

[0014] In combination with the first aspect, in certain embodiments of the first aspect, a ratio of an area of ​​an orthographic projection of the second electrode to an area of ​​the second surface is 100%.

[0015] In a second aspect, a contact resistivity determination device is provided, comprising: at least one processor and a memory for storing instructions executable by the processor; wherein the processor is configured to execute the instructions to implement the method provided in the first aspect and any possible implementation manner thereof.

[0016] In a third aspect, a computer-readable storage medium is provided. When instructions in the computer-readable storage medium are executed by a processor of a contact resistivity determination device, the contact resistivity determination device is enabled to perform the method provided in the first aspect and any possible implementation manner thereof.

[0017] According to a fourth aspect, a computer program product comprising instructions is provided, which, when executed on a computer, enables the computer to execute the method provided by the first aspect and any possible implementation manner thereof.

[0018] Among them, the technical effects brought about by any implementation of the second to fourth aspects can refer to the technical effects brought about by different implementations of the first aspect mentioned above, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 A schematic diagram of the architecture of a contact resistivity determination system provided in this application; Figure 2 A side view of a target semiconductor provided by the present application; Figure 3 A side view of another target semiconductor provided by the present application; Figure 4 A side view of another target semiconductor provided by the present application; Figure 5 A top view of a target semiconductor provided in the present application; Figure 6 A schematic diagram of a contact resistivity determination method provided in this application; Figure 7 A schematic diagram of a linear fit provided in this application; Figure 8 A schematic structural diagram of a contact resistivity determination device provided in the present application. DETAILED DESCRIPTION

[0020] In the description of this application, unless otherwise specified, "plurality" means two or more than two. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, at least one of a, b, or c can mean: a, b, c, ab, ac, bc, or abc, where a, b, and c can be single or multiple.

[0021] In addition, in order to clearly describe the technical solutions of the embodiments of the present application, in the embodiments of the present application, words such as "first" and "second" are used to distinguish the same items or similar items with substantially the same functions and effects. Those skilled in the art can understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit the difference.

[0022] Meanwhile, in the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a concrete manner for ease of understanding.

[0023] It is understood that the "embodiment" mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, the various embodiments in the entire specification do not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It is understood that in various embodiments of the present application, the size of the sequence number of each process does not mean the order of execution, and the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present application.

[0024] It can be understood that in the present application, "when", "if" and "if" all mean that corresponding processing will be carried out under certain objective circumstances, but do not limit the time, nor do they require judgment actions when implementing them, nor do they mean the existence of other limitations.

[0025] It can be understood that some optional features in the embodiments of the present application may be implemented independently in certain scenarios without relying on other features, such as the solution on which they are currently based, to solve corresponding technical problems and achieve corresponding effects, or may be combined with other features according to needs in certain scenarios. Accordingly, the devices provided in the embodiments of the present application may also realize these features or functions accordingly, which will not be elaborated here.

[0026] In this application, unless otherwise specified, the same or similar parts between the various embodiments can refer to each other. In the various embodiments in this application, and the various implementation methods in each embodiment, if there is no special description and logical conflict, the terms and / or descriptions between different embodiments and the various implementation methods in each embodiment are consistent and can be referenced to each other. The technical features in different embodiments and the various implementation methods in each embodiment can be combined to form new embodiments, implementation methods, implementation methods, or implementation methods according to their inherent logical relationships. The following implementation methods of this application do not constitute a limitation on the scope of protection of this application.

[0027] Contact resistivity is a physical quantity used to measure the degree of resistance of the contact part between two conductors (for example, semiconductors and electrodes). It reflects the resistance per unit contact area caused by incomplete contact or the presence of dirt, oxide layer, etc. on the contact surface.

[0028] Contact resistivity is one of the key indicators for measuring electrical connection performance. In solar cells, how to determine the contact resistivity between electrodes and semiconductor materials is a crucial issue.

[0029] An existing solution can qualitatively determine the contact resistivity of semiconductors manufactured by different processing techniques through symmetrical measurement, but cannot quantitatively determine the contact resistivity of the semiconductor.

[0030] To solve the above problems, the present application provides a contact resistivity determination method, which can be applied to a contact resistivity determination system. Figure 1 This is a schematic diagram of the architecture of a contact resistivity determination system provided in this application. The technical solution of the embodiment of this application can be applied to Figure 1 The contact resistivity determination system shown in FIG. Figure 1 As shown, the contact resistivity determining system 10 includes a contact resistivity determining device 11 , a resistance value measuring device 12 , and a target semiconductor 13 .

[0031] The resistance value measuring device 12 can measure the resistance value between two electrodes on different surfaces of the target semiconductor 13 by a two-wire method or a four-wire method.

[0032] The contact resistivity determining device 11 is connected to the resistance value measuring device 12 , and the contact resistivity determining device 11 can obtain the measurement result of the resistance value measuring device 12 .

[0033] The resistance value measuring device 12 may be a microohmmeter. Of course, the resistance value measuring device 12 may also be other equipment that can measure resistance values, and the present application does not impose any specific limitation on this.

[0034] The resistance value measuring device 12 may have a measurement accuracy of 1 mΩ.

[0035] The measuring probe of the resistance value measuring device 12 may be a flat-head probe with a diameter of 0.5 mm to 1 mm.

[0036] The type of the target semiconductor 13 may be HJT or TOPCon.

[0037] The target semiconductor 13 may be a silicon substrate semiconductor, and the resistivity of the silicon substrate may be less than 10 Ω·cm.

[0038] The square resistance of the front side of the target semiconductor 13 is consistent with the square resistance of the back side, and the uniformity of the intra-chip square resistance of the target semiconductor 13 is less than or equal to the preset uniformity threshold. Exemplarily, the preset uniformity threshold may be 5%, 6%, of course, the preset uniformity threshold may also have other values, and the present application does not impose specific restrictions on this. In this way, since the intra-chip square resistance uniformity of the target semiconductor 13 is less than or equal to the preset uniformity threshold, the electrical properties of various parts of the target semiconductor are relatively consistent, which can reduce the influence of the intra-chip square resistance of the target semiconductor on the transmission path of free electrons, thereby improving the accuracy of the determined contact resistivity.

[0039] When the target semiconductor 13 is a silicon-based semiconductor, Figure 2 A side view of a target semiconductor provided in this application, such as Figure 2 As shown, the target semiconductor 13 includes a silicon substrate, a first doping layer is included between the silicon substrate and the first electrode, a second doping layer is included between the silicon substrate and the second electrode, and the first doping layer, the second doping layer and the silicon substrate have the same doping type. In this way, since the first doping layer, the second doping layer and the silicon substrate have the same doping type, the pn junction unidirectional conduction effect can be avoided in the target semiconductor 13, thereby improving the accuracy of resistivity measurement.

[0040] Exemplarily, the doping type may be n-type or p-type, which is not specifically limited in the present application.

[0041] The first doping layer or the second doping layer may be a doped amorphous silicon layer, or the first doping layer or the second doping layer may be a doped polysilicon layer.

[0042] In the case where the first doped layer and the second doped layer are doped amorphous silicon layers, Figure 3 A side view of another target semiconductor provided for this application, such as Figure 3 As shown, an intrinsic amorphous silicon layer may be included between the first doped layer, the second doped layer and the silicon substrate.

[0043] In the case where the first doped layer and the second doped layer are doped polysilicon layers, Figure 4 A side view of another target semiconductor provided for this application, such as Figure 4 As shown, a tunnel passivation layer may be included between the first doped layer, the second doped layer and the silicon substrate. Of course, there may be other structures between the silicon substrate and the electrode, and this application does not impose any specific restrictions on this.

[0044] like Figure 2 or Figure 3 or Figure 4 As shown, the target semiconductor 13 has a first surface and a second surface, the first surface being opposite to the second surface.

[0045] A plurality of first electrodes are distributed on the first surface, and a second electrode is arranged on the second surface.

[0046] The thickness of the first electrode or the second electrode is less than 10 μm.

[0047] The first electrode or the second electrode does not burn through the doping layer, the appearance of the first electrode has no holes, and there is no conductive medium other than the doping layer between the multiple first electrodes on the first surface.

[0048] The number of the plurality of first electrodes may be any number. Preferably, the number of the plurality of first electrodes is greater than or equal to 5, and the number of the plurality of first electrodes is less than or equal to 60. Figure 5A top view of a target semiconductor provided in this application, such as Figure 5 As shown, the number of the plurality of first electrodes is 6. On the one hand, the more the number of first electrodes is, the more the samples of linear fitting are, and the higher the accuracy of the contact resistivity is determined. On the other hand, after the first electrodes reach a certain number, the more the number of first electrodes is, the higher the cost of making the first electrodes is, and the smaller the improvement of the accuracy of the contact resistivity is. When the number of the plurality of first electrodes is greater than or equal to 5 and the number of the plurality of first electrodes is less than or equal to 60, the cost of making the first electrodes and the accuracy of determining the contact resistivity can be considered at the same time.

[0049] like Figure 5 As shown, the first electrode is a circular electrode.

[0050] like Figure 5 As shown, the radii of the plurality of first electrodes are different.

[0051] Taking the target first electrode as any one of the multiple first electrodes as an example, the radius of the target first electrode is greater than or equal to 0.5 mm, and the radius of the target first electrode is less than or equal to 5 mm. In this way, since the radius of the target first electrode is less than or equal to 5 mm, the distance of the lateral transmission of free electrons in the target first electrode can be reduced, thereby reducing the adverse effect on the determined contact resistivity; in addition, since the radius of the target first electrode is greater than or equal to 0.5 mm, the area of ​​the target first electrode is not too small, so that there can be sufficient contact area between the target first electrode and the probe of the resistance value measuring device, which can reduce the occurrence of inaccurate resistance value measurement due to incomplete contact between the target first electrode and the probe.

[0052] like Figure 5 As shown, the distance L1 between the target point of the target first electrode and the target edge of the first surface is greater than or equal to 10 mm; the target point is any point on the circumferential edge of the first electrode, and the target edge is any edge of the first surface. In this way, when free electrons are transmitted between the first electrode and the second electrode, the interference caused by the edge of the target semiconductor on the transmission path of the free electrons can be reduced, thereby improving the accuracy of determining the contact resistivity. Figure 4As shown, the distance L2 between the target point of the target first electrode and the target point of the non-target first electrode is greater than or equal to 10 mm; the non-target first electrode is any first electrode other than the target first electrode among the multiple first electrodes, and the target point is any point on the circumferential edge of the first electrode. If the distance between two adjacent first electrodes is too small, free electrons may be transmitted between the two first electrodes, thereby affecting the accuracy of the determined contact resistivity. Since the distance L2 between the target point of the target first electrode and the target point of the non-target first electrode is greater than or equal to 10 mm, the two adjacent first electrodes can maintain a suitable distance, reduce the probability of free electrons being transmitted between the two adjacent first electrodes, and improve the accuracy of the determined contact resistivity.

[0053] like Figure 5 As shown, the centers of the multiple first electrodes can be located on a straight line. In this way, when making the multiple first electrodes, the moving range of the equipment can be reduced and the efficiency of making the first electrodes can be improved; alternatively, the centers of the multiple first electrodes may not be located on a straight line. For example, the centers of the multiple first electrodes may be located on multiple straight lines (for example, taking the number of the multiple first electrodes as 60, the circles of the 60 first electrodes can be evenly distributed on 3 straight lines), and the centers of the multiple first electrodes are located on a circle. The present application does not impose any specific restrictions on this.

[0054] When the centers of the multiple first electrodes are located on a straight line, the straight line may be parallel to one side of the first surface, or the straight line may not be parallel to one side of the first surface, and the present application does not impose any specific limitation on this.

[0055] The orthographic projection of the target first electrode is within the orthographic projection of the second electrode. On this basis, illustratively, the ratio of the area of ​​the orthographic projection of the second electrode to the area of ​​the second surface is 100%, 90%, and 80%, and this application does not impose specific restrictions on this. Preferably, the ratio of the area of ​​the orthographic projection of the second electrode to the area of ​​the second surface is 100%. In this way, since the second electrode completely covers the second surface, the area for free electrons to be transmitted inside the target semiconductor can be expanded, thereby improving the accuracy of the determined contact resistivity.

[0056] The second electrode may be a whole-surface electrode, that is, there are no holes on the surface of the second electrode, so that the accuracy of the determined contact resistivity can be improved; or the second electrode may be a mesh electrode, so that the material used for the second electrode can be saved.

[0057] The electrode can be prepared on the surface of the target semiconductor 13 by any of the following processes: Process a) Printing metal paste on the doped layer and then sintering.

[0058] Process b) Printing metal paste after depositing a seed layer on top of the doped layer.

[0059] Process c) preparing a metal electrode on the doped layer by depositing a seed layer and electroplating.

[0060] Process d) depositing a metal electrode on the doped layer by evaporation.

[0061] Process e) A transparent conductive film such as ITO is disposed on the doped layer, and then a metal electrode is prepared on the transparent conductive film by depositing a seed layer and electroplating process.

[0062] It should be noted that the specific description of each of the above processes can refer to the existing solutions, and this application will not describe them in detail.

[0063] After preparing the electrode on the surface of the target semiconductor 13, a darkroom with a temperature of 25°C ± 3°C and a relative humidity of 60% ± 20% can be set up, and a gold-plated metal platform is configured in the darkroom. The target semiconductor 13 is placed on the gold-plated metal platform under vacuum adsorption so that the second electrode contacts the gold-plated metal platform, and then the probe of the resistance value measuring device 12 is used to contact the central position of the first electrode to measure the resistance value between the first electrode and the second electrode. Since the contact resistivity is determined in the darkroom, the photocurrent in the target semiconductor can be reduced, the influence of the photocurrent on the determined contact resistivity can be reduced, and the accuracy of the determined contact resistivity can be improved.

[0064] In some embodiments, the probe of the resistance measuring device 12 may also be used to contact a non-central position of the first electrode, and the present application does not impose any specific limitation on this.

[0065] After the resistance value measuring device 12 measures the resistance value, the contact resistivity determining device 11 can obtain the resistance value, and then execute the contact resistivity determining method provided in the present application. In practical applications, the contact resistivity determining method provided in the embodiment of the present application can be applied to the contact resistivity determining device 11, and can also be applied to the device included in the contact resistivity determining device 11.

[0066] The contact resistivity determination method provided in the embodiment of the present application is described below with reference to the accompanying drawings, taking the contact resistivity determination method applied to the contact resistivity determination device 11 as an example.

[0067] Figure 6 A schematic diagram of a contact resistivity determination method provided in this application, such as Figure 6 As shown, the method comprises the following steps: S601. A contact resistivity determination device obtains a plurality of resistance values.

[0068] The resistance value is a resistance value between a first electrode on a first surface of a target semiconductor and a second electrode on a second surface of the target semiconductor, and the plurality of resistance values ​​correspond one-to-one to the plurality of first electrodes.

[0069] As a possible implementation method, taking the number of multiple first electrodes as 6 as an example, for the first first electrode among the multiple first electrodes, the probe of the resistance measuring device contacts the first first electrode to measure an initial resistance value, and sends the initial resistance value to the contact resistivity determining device; after the probe of the resistance measuring device is lifted up, it contacts the first first electrode again to measure another initial resistance value, and sends the initial resistance value to the contact resistivity determining device; after the probe of the resistance measuring device is lifted up, it contacts the first first electrode again to measure another initial resistance value, and sends the initial resistance value to the contact resistivity determining device.

[0070] The initial resistance value measuring device measures at least one initial resistance value, and accordingly, the resistivity determining device receives at least one initial resistance value, and uses the average value of at least one initial resistance value as the resistance value corresponding to the first first electrode. .

[0071] By analogy, the contact resistivity determining device determines the resistance value corresponding to the second first electrode. , determine the resistance value corresponding to the third first electrode , determine the resistance value corresponding to the fourth first electrode , determine the resistance value corresponding to the fifth first electrode , determine the resistance value corresponding to the sixth first electrode .

[0072] S602: The contact resistivity determining device obtains a plurality of extended resistance values.

[0073] The multiple extended resistance values ​​correspond to the multiple first electrodes one by one.

[0074] As a possible implementation manner, taking the number of the plurality of first electrodes as 6 as an example, the contact resistivity determining device determines the extended resistance value corresponding to the first electrode according to the second relationship: Second relationship: in, represents the extended resistance value, d represents the diameter of the first electrode, represents the resistivity of the target semiconductor and t represents the thickness of the target semiconductor.

[0075] The contact resistivity determination device brings the diameter of the first first electrode into the second relationship, and can determine the extended resistance value corresponding to the first first electrode. , the diameter of the second first electrode is brought into the second relationship, and the extended resistance value corresponding to the second first electrode can be determined , substituting the diameter of the third first electrode into the second relationship, the extended resistance value corresponding to the third first electrode can be determined , substituting the diameter of the fourth first electrode into the second relationship, the extended resistance value corresponding to the fourth first electrode can be determined , substituting the diameter of the fifth first electrode into the second relationship, the extended resistance value corresponding to the fifth first electrode can be determined , substituting the diameter of the sixth first electrode into the second relationship, the extended resistance value corresponding to the sixth first electrode can be determined .

[0076] It should be noted that the thickness t of the target semiconductor includes the thickness of the silicon substrate and the thickness of the material between the silicon substrate and the electrode. Figure 2 As shown, the thickness t of the target semiconductor includes the thickness of the silicon substrate, the thickness of the first doping layer and the thickness of the second doping layer; Figure 3 As shown, the thickness t of the target semiconductor includes the thickness of the silicon substrate, the thickness of the two doped amorphous silicon layers, and the thickness of the two intrinsic amorphous silicon layers; Figure 4 As shown, the thickness t of the target semiconductor includes the thickness of the silicon substrate, the thickness of the two doped polysilicon layers and the thickness of the two tunnel passivation layers.

[0077] S603. The contact resistivity determining device performs linear fitting based on the area of ​​each first electrode, the resistance value corresponding to each first electrode and the extended resistance value corresponding to each first electrode, and determines the slope of the linear fitting line as the contact resistivity between the first electrode and the silicon substrate.

[0078] As a possible implementation manner, the contact resistivity determination device performs linear fitting based on the first relationship: First Relationship: in, represents the resistance value corresponding to the first electrode, represents the extended resistance value corresponding to the first electrode, A represents the area of ​​the first electrode, is the contact resistivity, Indicates the residual resistance value.

[0079] It should be noted that the residual resistance value includes the total contact resistance value between the second electrode and the target semiconductor, the internal resistance value of the resistance measuring device probe, the internal resistance value of the resistance measuring device, and the contact resistance value between the probe and the first electrode.

[0080] Since the resistivity of the electrode is less than 5×10 -5Ω·cm, when the thickness of the electrode is less than 10μm, its resistivity per unit area is less than 5×10 -11 mΩ·cm². In general, the contact resistivity between the electrode and the silicon substrate is usually greater than or equal to 2mΩ·cm². The resistivity of the electrode has a very small effect on the determined contact resistivity, so the resistivity of the electrode is ignored.

[0081] As an example, taking the number of the plurality of first electrodes as 6, Figure 7 A linear fitting schematic diagram provided in this application is shown in FIG. Figure 7 As shown, the contact resistivity determining device is based on the inverse of the area of ​​the first first electrode. , the reciprocal of the area of ​​the second first electrode 1 / , the reciprocal of the area of ​​the third first electrode , the reciprocal of the area of ​​the fourth first electrode , the reciprocal of the area of ​​the fifth first electrode 1 / , the reciprocal of the area of ​​the sixth first electrode 1 / is the horizontal axis, - is 1 / The corresponding vertical coordinate, is 1 / The corresponding vertical coordinate, - is 1 / The corresponding vertical coordinate, - is 1 / The corresponding vertical coordinate, - is 1 / The corresponding vertical coordinate, is 1 / The corresponding ordinate is linearly fitted according to the first relationship to obtain a linear fitting line.

[0082] The contact resistivity determination device determines whether the goodness of fit is less than a preset goodness of fit threshold, whether the fit intercept is a negative value, and whether the fit slope is a negative value.

[0083] Exemplarily, the preset goodness-of-fit threshold may be 0.95 or 0.96. Of course, the preset goodness-of-fit threshold may also have other values, and the present application does not impose any specific limitation on this.

[0084] If all three judgment results are negative, the contact resistivity determining device determines the slope of the linear fitting line as the contact resistivity between the first electrode and the silicon substrate.

[0085] Further, the contact resistivity determining device may determine the intercept of the linear fitting line on the target axis as the residual resistance value.

[0086] The target axis corresponds to the target difference, and the target difference is the difference between the resistance value corresponding to the first electrode and the extended resistance value corresponding to the first electrode.

[0087] If at least one of the three judgment results is yes, the contact resistivity determination device generates indication information for indicating that the manufacturing uniformity of the target semiconductor is poor.

[0088] The target semiconductor can then be re-made and the contact resistivity re-determined.

[0089] Based on S601-S603, since a plurality of first electrodes are distributed on the first surface of the target semiconductor, a second electrode is arranged on the second surface of the target semiconductor opposite to the first surface, the plurality of first electrodes are circular electrodes with different radii, the orthographic projection of any first electrode is within the orthographic projection of the second electrode, the first doping layer, the second doping layer and the silicon substrate of the target semiconductor have the same doping type, the resistance value and the extended resistance value between the first electrode and the second electrode are affected by the area of ​​the first electrode, and the contact resistivity between the first electrode and the second electrode is not affected by the area of ​​the first electrode. Therefore, the area of ​​the first electrode can be considered as an independent variable, the contact resistivity between the first electrode and the target semiconductor can be considered as a constant, and the resistance value and the extended resistance value corresponding to the first electrode can be considered as dependent variables. After obtaining a plurality of resistance values ​​corresponding to the plurality of first electrodes one by one and a plurality of extended resistance values ​​corresponding to the plurality of first electrodes one by one, a linear fitting is performed based on the area of ​​each first electrode, the resistance value corresponding to each first electrode and the extended resistance value corresponding to each first electrode in a linear fitting manner, so that the slope of the linear fitting line can be determined as the contact resistivity between the first electrode and the silicon substrate.

[0090] Figure 8 This is a schematic diagram of the structure of a contact resistivity determination device provided in this application. Figure 8 As shown, the contact resistivity determination device 80 includes a processor 801, a memory 802 and a bus 803. The processor 801 and the memory 802 may be connected via the bus 803.

[0091] The processor 801 is the control center of the contact resistivity determination device 80, and can be a processor or a general term for multiple processing elements. For example, the processor 801 can be a general-purpose central processing unit (CPU) or other general-purpose processors. The general-purpose processor can be a microprocessor or any conventional processor.

[0092] As an embodiment, the processor 801 may include one or more CPUs, such as Figure 8CPU 0 and CPU 1 are shown in .

[0093] The memory 802 may be a read-only memory (ROM) or other types of static storage devices that can store static information and instructions, a random access memory (RAM) or other types of dynamic storage devices that can store information and instructions, an electrically erasable programmable read-only memory (EEPROM), a disk storage medium or other magnetic storage device, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and can be accessed by a computer, but is not limited thereto.

[0094] As a possible implementation, the memory 802 may exist independently of the processor 801, and the memory 802 may be connected to the processor 801 via a bus 803 to store instructions or program codes. When the processor 801 calls and executes the instructions or program codes stored in the memory 802, the contact resistivity determination method provided in the embodiment of the present application can be implemented.

[0095] In another possible implementation, the memory 802 may also be integrated with the processor 801 .

[0096] The bus 803 may be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus. The bus may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 8 Only one thick line is used in the diagram, but this does not mean that there is only one bus or only one type of bus.

[0097] It should be pointed out that Figure 8 The structure shown does not constitute a limitation on the contact resistivity determining device 80. Figure 8 In addition to the components shown, the contact resistivity determining apparatus 80 may include more or fewer components than shown, or combine certain components, or arrange the components differently.

[0098] Optional, such as Figure 8 As shown, the contact resistivity determination device 80 provided in the embodiment of the present application may further include a communication interface 804 .

[0099] The communication interface 804 is used to connect with other devices through a communication network. The communication network may be Ethernet, wireless access network, wireless local area network (WLAN), etc. The communication interface 804 may include a receiving unit for receiving data and a sending unit for sending data.

[0100] In a possible implementation, in the contact resistivity determination device 80 provided in the embodiment of the present application, the communication interface 804 may also be integrated in the processor 801, which is not specifically limited in the embodiment of the present application.

[0101] As a possible product form, the contact resistivity determination device of the embodiment of the present application can also be implemented using the following: one or more field programmable gate arrays (FPGA), programmable logic devices (PLD), controllers, state machines, gate logic, discrete hardware components, any other suitable circuits, or any combination of circuits capable of performing the various functions described throughout the present application.

[0102] Through the description of the above implementation methods, those skilled in the art can clearly understand that for the convenience and simplicity of description, only the division of the above functional units is used as an example. In practical applications, the above functions can be assigned to different functional units as needed, that is, the internal structure of the device can be divided into different functional units to complete all or part of the functions described above. The specific working process of the system, device and unit described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.

[0103] An embodiment of the present application also provides a computer-readable storage medium on which a computer program or instruction is stored. When the computer program or instruction is executed, the computer executes each step in the method flow shown in the above method embodiment.

[0104] An embodiment of the present application provides a computer program product including instructions. When the instructions are executed on a computer, the computer is caused to execute each step in the method flow shown in the above method embodiment.

[0105] An embodiment of the present application provides a chip system, including: a processor and an interface circuit; the interface circuit is used to receive a computer program or instruction and transmit it to the processor; the processor is used to execute the computer program or instruction so that the chip system executes each step in the method flow shown in the above method embodiment.

[0106] Among them, the computer-readable storage medium, for example, can be but not limited to electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices or devices, or any combination of the above. More specific examples of computer-readable storage media (non-exhaustive list) include: electrical connections with one or more wires, portable computer disks, hard disks. Random Access Memory (RAM), Read-Only Memory (ROM), Erasable Programmable Read Only Memory (EPROM), registers, hard disks, optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or the above people in a suitable combination, or any other form of computer-readable storage medium of numerical value in the art. An exemplary storage medium is coupled to a processor so that the processor can read information from the storage medium and write information to the storage medium. Of course, the storage medium can also be a component of the processor. The processor and the storage medium can be located in a specific purpose ASIC. In the embodiments of the present application, a computer-readable storage medium may be any tangible medium that contains or stores a program, which may be used by or in conjunction with an instruction execution system, apparatus, or device.

[0107] Since the contact resistivity determination device, computer-readable storage medium, and computer program product provided in this embodiment can be applied to the contact resistivity determination method provided in this embodiment, the technical effects that can be obtained can also refer to the above-mentioned method embodiments, and the embodiments of this application will not be repeated here.

[0108] Although the present application is described herein in conjunction with various embodiments, in the process of implementing the claimed application, those skilled in the art may understand and implement other changes to the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "one" or "an" does not exclude multiple situations. A single processor or other unit may implement several functions listed in a claim. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0109] Although the present application has been described in conjunction with specific features and embodiments thereof, it is obvious that various modifications and combinations may be made thereto without departing from the spirit and scope of the present application. Accordingly, this specification and the drawings are merely exemplary illustrations of the present application as defined by the appended claims, and are deemed to have covered any and all modifications, variations, combinations or equivalents within the scope of the present application. Obviously, those skilled in the art may make various modifications and variations to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A method for determining contact resistivity, characterized in that: The method comprises: Acquire a plurality of resistance values; the resistance value is a resistance value between a first electrode on a first surface of a target semiconductor and a second electrode on a second surface of the target semiconductor, the first surface is opposite to the second surface, a plurality of first electrodes are distributed on the first surface, the plurality of resistance values ​​correspond to the plurality of first electrodes one by one, the first electrode is a circular electrode, the plurality of first electrodes have different radii, the orthographic projection of the target first electrode is within the orthographic projection of the second electrode, the target first electrode is any first electrode among the plurality of first electrodes, the target semiconductor comprises a silicon substrate, a first doping layer is included between the silicon substrate and the first electrode, a second doping layer is included between the silicon substrate and the second electrode, and the first doping layer, the second doping layer and the silicon substrate have the same doping type; Acquire a plurality of extended resistance values; the plurality of extended resistance values ​​correspond one-to-one to the plurality of first electrodes; A linear fit is performed based on the area of ​​each first electrode, the resistance value corresponding to each first electrode and the extended resistance value corresponding to each first electrode, and the slope of the linear fit line is determined as the contact resistivity between the first electrode and the silicon substrate.

2. The method according to claim 1, characterized in that The performing linear fitting based on the area of ​​each first electrode, the resistance value corresponding to each first electrode, and the extended resistance value corresponding to each first electrode comprises: Perform a linear fit based on the first relation: First Relationship: in, represents the resistance value corresponding to the first electrode, represents the extended resistance value corresponding to the first electrode, A represents the area of ​​the first electrode, represents the contact resistivity, Indicates the residual resistance value.

3. The method according to claim 2, characterized in that The method further comprises: The intercept of the linear fitting line on the target axis is determined as the residual resistance value; the target axis corresponds to a target difference value, and the target difference value is the difference between the resistance value corresponding to the first electrode and the extended resistance value corresponding to the first electrode.

4. The method according to claim 1, characterized in that: The obtaining of multiple extended resistance values ​​comprises: For each first electrode among the plurality of first electrodes, an extended resistance value corresponding to the first electrode is determined according to the second relationship: Second relationship: in, represents the extended resistance value, d represents the diameter of the first electrode, represents the resistivity of the target semiconductor and t represents the thickness of the target semiconductor.

5. The method according to any one of claims 1 to 4, characterized in that: The distance between the target point of the target first electrode and the target edge of the first surface is greater than or equal to 10 mm; the target point is any point on the circumferential edge of the first electrode, and the target edge is any edge of the first surface.

6. The method according to any one of claims 1 to 4, characterized in that: The radius of the target first electrode is greater than or equal to 0.5 mm, and the radius of the target first electrode is less than or equal to 5 mm.

7. The method according to any one of claims 1 to 4, characterized in that: The distance between the target point of the target first electrode and the target point of the non-target first electrode is greater than or equal to 10 mm; the non-target first electrode is any first electrode among the multiple first electrodes except the target first electrode, and the target point is any point on the circumferential edge of the first electrode.

8. The method according to any one of claims 1 to 4, characterized in that: The on-chip resistance uniformity of the target semiconductor is less than or equal to a preset uniformity threshold.

9. The method according to any one of claims 1 to 4, characterized in that: The number of the plurality of first electrodes is greater than or equal to 5, and the number of the plurality of first electrodes is less than or equal to 60.

10. The method according to any one of claims 1 to 4, characterized in that: The centers of the plurality of first electrodes are located on a straight line.

11. The method according to any one of claims 1 to 4, characterized in that: The ratio of the area of ​​the orthographic projection of the second electrode to the area of ​​the second surface is 100%.

12. A contact resistivity determination device, characterized in that: The contact resistivity determination device comprises: a processor, the processor is coupled to a memory, the memory is used to store programs or instructions, when the program or instructions are executed by the processor, the device executes the method according to any one of claims 1 to 11.

13. A computer-readable storage medium having a computer program or instruction stored thereon, characterized in that: When the computer program or instructions are executed, the computer is caused to perform the method according to any one of claims 1 to 11.

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