Device and method for preparing perovskite sunlight absorption layer

Abstract

The invention discloses a device and a method for preparing a perovskite sunlight absorption layer, the device comprises a first process gas purging module, a second process gas purging module, an isolation gas purging module and a gas extraction module, and the first process gas and the second process gas are mixed gas brought out through carrier gas after an organic source and an inorganic source with single components are heated and sublimated respectively; during film coating, air ports of the process gas purging modules blow out strip-shaped airflow, and the conveying assembly supports the film-coated substrate to enable the film-coated substrate to pass through the range of the strip-shaped airflow, so that the strip-shaped airflow blown out by the first process gas purging module and the second process gas purging module sweep over the surface of the film-coated substrate in sequence, and a perovskite sunlight absorption layer is deposited and generated. Through cooperation of the isolation gas purging module, the gas exhaust module and the conveying assembly with the sealing performance, the environments of the first process gas coating area and the second process gas coating area are independent and stable, and therefore a large-size, high-quality and high-uniformity light absorption layer can be deposited under the normal pressure.

Description

Technical Field

[0001] The present invention relates to the field of photovoltaic technology, and in particular to a device and method for preparing a perovskite solar light absorption layer. Background Art

[0002] Perovskite solar cells have become an efficient way to obtain clean energy in the future due to their excellent photoelectric conversion efficiency. To achieve industrial production, a device and method that can prepare perovskite solar light absorption layers on a large scale is needed. At present, there are two main methods for preparing perovskite solar light absorption layers on a large scale: vacuum evaporation physical vapor deposition and slit coating.

[0003] The vacuum evaporation physical vapor deposition perovskite solar absorption layer is obtained by heating the perovskite absorption layer precursor in a vacuum environment to evaporate and deposit it onto the substrate. This method has good performance in terms of film density, component stoichiometric ratio, crystal quality, conformality, batch repeatability, etc. However, the halide is easily affected by the heating temperature during the evaporation process, and the heating power and cooling rate need to be precisely controlled. In addition, if a large area is to be prepared, the vacuum cavity needs to be enlarged to ensure the range and uniformity of the film formation, which will undoubtedly bring more costs. The slit coating method for preparing the perovskite solar light absorption layer is to pump the prepared precursor solution into the pipeline through a pump, and then spray it on the surface of the substrate through the slit. By controlling parameters such as the flow rate of the liquid, the movement speed of the substrate, and the distance between the nozzle and the substrate, a perovskite solar light absorption layer of a certain quality and film thickness can be obtained. The advantage of this method is that it can form a coating on a large area substrate, especially a flexible substrate, and it has low production efficiency and cost. However, since this method is based on solution spraying, slight changes in the viscosity, surface tension, density and flow behavior of the liquid will lead to significant differences in coating quality. Any fluctuation will lead to uneven film thickness or the appearance of stripes, bubbles and other problems, which will cause hidden dangers in the photoelectric conversion efficiency and long-term reliability of the light-absorbing layer. At the same time, the batch repeatability is poor, resulting in a loss of manufacturing yield. Summary of the invention

[0004] The purpose of the present invention is to provide a device with a novel structure for preparing a perovskite solar light absorption layer to meet the requirements of perovskite solar cells for the preparation of large-size, high-quality and high-uniformity light absorption layers.

[0005] The object of the present invention is achieved through the following technical solutions: an apparatus for preparing a perovskite solar light absorption layer, comprising a deposition chamber, a conveying assembly, a heating module and a gas purge module, wherein the gas inlet of the gas purge module and the conveying assembly are oppositely distributed in the deposition chamber, and a deposition channel for the movement of the coated substrate is formed therebetween, the heating module is used to heat the coated substrate, the gas purge module comprises at least one first process gas purge module and at least one second process gas purge module, an isolation gas purge module and an exhaust module, wherein the gas inlet of the isolation gas purge module is arranged between and outside the gas inlets of each process gas purge module, and the gas inlet of the exhaust module is arranged between the gas inlets at intervals;

[0006] The first process gas is a mixed gas brought out by a carrier gas after a single-component organic source is heated and sublimated;

[0007] The second process gas is a mixed gas brought out by a carrier gas after a single-component inorganic source is heated and sublimated;

[0008] The conveying assembly is closed and does not allow airflow to directly penetrate when the coated substrate is located in the air port area;

[0009] During coating, the air inlets of the isolation gas purge module and the process gas purge module both blow out strip-shaped airflows, and the conveying assembly supports the coated substrate to allow it to pass through the range of the strip-shaped airflow, so that the strip-shaped airflows blown out by the first and second process gas purge modules sweep across the surface of the coated substrate, and deposit to generate the perovskite solar light absorption layer. Excess gas is extracted from the air inlet of the exhaust module, and the length of the exhaust port is greater than or equal to the length of the air inlets of the isolation gas purge module and the process gas purge module.

[0010] The above-mentioned gas inlet area refers to the area defined by the gas inlets, that is, the area defined by the two outermost isolation gas inlets. Located in the gas inlet area means that in the opposite direction, the coated substrate overlaps with the gas inlet area.

[0011] The first process gas of the first process gas purge module uses the same or different organic sources, and the organic source is FAI (formamidine iodide), FACl (formamidine chloride), FABr (formamidine bromide), MAI (methylamine iodide), MACl (methylamine chloride), MABr (methylamine bromide) or PEAI (phenylethylammonium iodide), etc.

[0012] The second process gas of the second process gas purge module uses the same or different inorganic sources, and the inorganic source is PbI2 (lead iodide), PbBr2 (lead bromide), PbCl2 (lead chloride), CsI (cesium iodide), CsCl (cesium chloride) or CsBr (cesium bromide) and the like.

[0013] The gas inlets of the first process gas purge module, the second process gas purge module, the isolation gas purge module and the exhaust module are arranged together to form an integrated structure, which can facilitate the installation of the gas inlets in the deposition chamber.

[0014] The gas paths of the gas ports of the isolation gas purge module are interconnected, and the gas paths of the gas ports of the exhaust module are interconnected, so the number of power mechanisms can be reduced.

[0015] The gas inlets of the isolation gas purge module and the process gas purge module are both designed with slits.

[0016] The air outlet of the air extraction module is also a slit, and the two ends of the air outlet of each air extraction module are connected together, and the air outlet frame located between them is within its range. This structure is conducive to making the gas field environment in the internal deposition area more stable.

[0017] The present invention also provides a method for preparing a perovskite solar light absorption layer using the device, which comprises the following steps:

[0018] The heating module is turned on to preheat the coated substrate, and the gas purge module is turned on, and then the conveying component is controlled to drive the coated substrate to move back and forth in the deposition channel, and the first process gas and the second process gas are adsorbed multiple times, so as to obtain a perovskite solar light absorption layer of the required thickness, and finally annealing is performed on it to make its performance meet the requirements. The preheating temperature is controlled between 25-300℃; during the annealing treatment, the annealing temperature is controlled between 25-300℃.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] 1) The width of the deposition channel of the device of the present invention can be prepared to be very large without affecting the high quality and high uniformity of the light-absorbing layer. The substrate can also be driven to move back and forth in the deposition channel through the conveying component to obtain the required thickness, which can well control the cost of the equipment. The device of the present invention can be used to prepare perovskite solar light absorption layers on flexible substrates.

[0021] 2) The perovskite solar light absorption layer of the present invention is formed by adsorbing the precursor on the substrate in the gas phase. No solution is involved in the deposition process, and there is no need to worry about stripes and bubbles, thereby achieving the preparation of a high-quality and high-uniformity light absorption layer.

[0022] 3) The present invention eliminates cross-reaction between the first process gas and the second process gas and gas agglomeration by purging the isolation gas and cooperating with vacuuming, and isolates the influence of ambient particles, water vapor, etc., to prevent these factors from changing the uniformity and stability of the chemical composition of the substrate. Not only does the deposition process of the present invention allow deposition to be carried out under normal pressure, but also the high quality and uniformity of the film layer are maintained.

[0023] 4) The present invention processes organic sources and inorganic sources and different categories separately, the evaporation process is easy to control, the evaporation rate is more stable, and the evaporated particles are carried out by the carrier gas, which can make the number and energy of particles received by the substrate surface more uniform, making the deposition rate, stoichiometric composition, etc. of the film layer more stable. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A schematic diagram of the device structure of a preferred embodiment of the present invention;

[0025] Figure 2 for Figure 1 A top view schematic diagram of the gas port setting method of the gas purge module;

[0026] Figure 3 for Figure 2 A front cross-sectional structural diagram of ;

[0027] Figure 4 for Figure 1 Schematic diagram of the gas path setting structure of the gas purge module;

[0028] Figure 5 , 6 The structure of the conveying assembly of this embodiment is shown;

[0029] Figure 7 Flow chart of a method for preparing a perovskite solar light absorbing layer.

[0030] Description of reference numerals: 100 - equipment for preparing perovskite solar light absorption layer; 110 - tray; 111 - film-coated substrate; 120 - deposition chamber; 130 - gas path module; 140 - gas port module; 150 - deposition channel; 160 - conveying module; 170 - heating module;

[0031] 141-first isolation gas blowing port; 142-first exhaust port; 143-first process gas blowing port; 144-second exhaust port; 145-second isolation gas blowing port; 146-third exhaust port; 147-second process gas blowing port; 148-fourth exhaust port; 149-third isolation gas blowing port;

[0032] 131-first isolation gas path; 132-first exhaust gas path; 133-first process gas path; 134-second exhaust gas path; 135-second isolation gas path; 136-third exhaust gas path; 137-second process gas path; 138-fourth exhaust gas path; 139-third isolation gas path. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and drawings. Obviously, the described embodiments are only some optional implementation methods of the present invention and should not be construed as limiting the scope of implementation of the present invention.

[0034] In the following description, it should be understood that the terms "upper", "lower", "inside", "outside", "left", "right", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, or are the orientations or positional relationships in which the product is conventionally placed when in use, or are the orientations or positional relationships conventionally understood by those skilled in the art. They are only for the convenience of describing the present invention, and do not indicate or imply that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0035] Furthermore, the terms “first”, “second”, etc. are merely used for distinguishing descriptions and are not to be understood as indicating or implying relative importance.

[0036] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms such as "setting" and "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0037] The specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0038] See also Figure 1 , Figure 1 Shown is a schematic structural diagram of an apparatus 100 for preparing a perovskite solar light absorption layer provided in this embodiment.

[0039] The device 100 provided in this embodiment includes a deposition chamber 120, a conveying assembly, a heating module 170 and a gas purge module. The conveying assembly includes a conveying module 160 and a tray 110 (such as Figure 5 As shown, Figure 1 The tray 110 is used to carry the coated substrate and is fixed to the conveying module 160. The gas path module 130 and the gas port module 140 in the figure are both components of the gas purge module. The gas port module 140 is connected to the gas path module 130, and the gas port module 140 and the heating module 170 are distributed up and down in the deposition chamber 120. The conveying assembly is arranged above the heating module 170 and opposite to the gas port module 140. A deposition channel 150 for the coated substrate to move is formed between the conveying assembly and the gas port module 140.

[0040] Please refer to Figure 2 , Figure 2 It is a schematic diagram of the top view of the air port module 140 of the device 100.

[0041] The gas port module 140 of the device 100 includes a first isolation gas blowing port 141, a first exhaust port 142, a first process gas blowing port 143, a second exhaust port 144, a second isolation gas blowing port 145, a third exhaust port 146, a second process gas blowing port 147, a fourth exhaust port 148, and a third isolation gas blowing port 149. The first process gas blowing port 143 is used to purge the first process gas into the deposition channel 150, the second process gas blowing port 147 is used to purge the second process gas into the deposition channel 150, the first isolation gas blowing port 141, the second isolation gas blowing port 145, and the third isolation gas blowing port 149 are used to purge isolation gas into the deposition channel 150, and the first exhaust port 142, the second exhaust port 144, the third exhaust port 146, and the fourth exhaust port 148 are used to extract the remaining process gas and isolation gas and gaseous by-products in the deposition channel 150 from the installation chamber.

[0042] The present embodiment aims to allow the first process gas blowing port 143, the second process gas blowing port 147, the first isolation gas blowing port 141, the second isolation gas blowing port 145, and the third isolation gas blowing port 149 to form different gas atmosphere fields at different positions of the deposition channel 150 through the above arrangement. The first process gas blowing port 143 forms a first process gas atmosphere field by continuously purging the first process gas, the second process gas blowing port 147 forms a second process gas atmosphere field by continuously purging the second process gas, the first isolation gas blowing port 141 forms a first isolation gas atmosphere field by continuously purging the isolation gas, the second isolation gas blowing port 145 forms a second isolation gas atmosphere field by continuously purging the isolation gas, and the third isolation gas blowing port 149 forms a third isolation gas atmosphere field by continuously purging the isolation gas.

[0043] Since the first isolation gas blowing port 141 is located on the left side of the first process gas blowing port 143, that is, the first isolation gas atmosphere field is located on the left side of the first process gas atmosphere field, the other gases in the deposition chamber 120 are isolated from the first process gas atmosphere field. Since the third isolation gas blowing port 149 is located on the right side of the second process gas blowing port 147, that is, the third isolation gas atmosphere field is located on the right side of the second process gas atmosphere field, the other gases in the deposition chamber 120 are isolated from the second process gas atmosphere field. Since the second isolation gas blowing port 145 is located between the first process gas blowing port 143 and the second process gas blowing port 147, that is, the second isolation gas atmosphere field is located between the first process gas atmosphere field and the second process gas atmosphere field, the first process gas atmosphere field and the second process gas atmosphere field are isolated.

[0044] The exhaust port is located between the isolation gas purge port and the process gas purge port, that is, the exhaust port is located between the isolation gas atmosphere field and the process gas atmosphere field, so as to extract excess isolation gas, remaining process gas and excess gaseous by-products from the deposition channel 150 to maintain the stability of each gas atmosphere field state, avoid the entry of other gases such as environmental particles and water vapor into the deposition chamber 120, and avoid the isolation gas from entering the first process gas atmosphere field or the second process gas atmosphere field, and prevent the first process gas from cross-reacting with the second process gas, so as to avoid changing the uniformity and stability of the chemical composition of the coated substrate and ensure the deposition quality of the film layer.

[0045] In actual application, when the coated substrate is carried by the tray 110 and driven by the conveying module 160 to move along the deposition channel 150, it passes through the first isolation gas atmosphere field, the first process gas atmosphere field, the second isolation gas atmosphere field, the second process gas atmosphere field, and the third isolation gas atmosphere field in sequence. In the process of passing through the first process gas atmosphere field, the surface of the coated substrate adsorbs the first process gas, and in the process of passing through the second process gas atmosphere field, the surface of the coated substrate adsorbs the second process gas again to complete a deposition reaction and form a film.

[0046] It is understandable that, in the process of the coated substrate passing through the deposition channel 150, the coated substrate will sequentially pass through the first process gas atmosphere field and the second process gas atmosphere field, complete a deposition reaction, and form a film layer. According to the required film thickness, the coated substrate can be controlled to reciprocate multiple times in the deposition channel 150, thereby achieving multiple depositions to obtain a film layer that meets the thickness requirements.

[0047] Please refer to Figure 3 , Figure 3 It is a schematic cross-sectional structure diagram of the air port module 140 of the device 100.

[0048] The figure shows that the gas ports of this embodiment are centrally arranged on a plate to form an integrated structure, which is more convenient for the installation of the gas ports in the deposition chamber 120. Among them, the gas blowing ports for the isolation and process gases are designed with slits so that the blown-out strip of gas can separate the two sides like an air curtain (gas forms a curtain), and the exhaust port is also composed of a slit. Generally speaking, the width of the coating substrate should be smaller than the length of the isolation and process gas blowing ports so that the coating substrate can pass through the range of the strip of gas, and the length of the exhaust port should be greater than or equal to the blowing port (in Figure 2 , 3 In the figure, the lengths of the three air ports are equal).

[0049] Please refer to Figure 4 , Figure 4 It is a schematic structural diagram of the gas circuit module 130 of the device 100.

[0050] The gas circuit module 130 of the device 100 includes a first isolation gas circuit 131, a first exhaust gas circuit 132, a first process gas circuit 133, a second exhaust gas circuit 134, a second isolation gas circuit 135, a third exhaust gas circuit 136, a second process gas circuit 137, a fourth exhaust gas circuit 138, and a third isolation gas circuit 139. The first process gas circuit 133 is used to deliver the first process gas to the first process gas blowing port 143, the second process gas circuit 137 is used to deliver the second process gas to the second process gas blowing port 147, the first isolation gas circuit 131 is used to deliver isolation gas to the first isolation gas blowing port 141, the second isolation gas circuit 135 is used to deliver isolation gas to the second isolation gas blowing port 145, and the third isolation gas circuit 139 is used to deliver isolation gas to the third isolation gas blowing port 149. The first exhaust gas circuit 132 is connected to the first exhaust port 142, the second exhaust gas circuit is connected to the second exhaust port 144, the third exhaust gas circuit 136 is connected to the third exhaust port 146, and the fourth exhaust gas circuit 138 is connected to the fourth exhaust port 148 to extract the remaining process gas and isolation gas as well as gaseous by-products of the deposition channel 150 from the installation chamber.

[0051] In the present embodiment, the first isolation gas path 131, the second isolation gas path 135, and the third isolation gas path 139 are interconnected, and isolation gas can be delivered to the first isolation gas path 131, the second isolation gas path 135, and the third isolation gas path 139 through one isolation gas path; the first exhaust gas path 132, the second exhaust gas path 134, the third exhaust gas path 136, and the fourth exhaust gas path 138 are interconnected, and the remaining process gas and isolation gas as well as gaseous by-products of the first exhaust gas path 132, the second exhaust gas path 134, the third exhaust gas path 136, and the fourth exhaust gas path 138 can be extracted from the deposition channel 150 through one exhaust gas path.

[0052] The first process gas can be selected from an organic source such as FAI, FACl, FABr, MAI, MACl, MABr or PEAI, which is a mixed gas that is heated and sublimated in a closed container and then carried to the purge port through a closed pipeline by a high-purity carrier gas such as argon or nitrogen. The second process gas can be selected from an inorganic source such as PbI2, PbBr2, PbCl2, CsI, CsCl or CsBr, which is a mixed gas that is heated and sublimated in a closed container and then carried to the purge port through a closed pipeline by a high-purity carrier gas such as argon or nitrogen.

[0053] This method of using a single-component organic source and an inorganic source to be processed separately and then deposited to form a perovskite solar light absorption layer makes the entire evaporation and deposition process easier to control and more stable. After the evaporated particles are carried out by the carrier gas, the number and energy of particles received by the substrate surface are more uniform, and the deposition rate and stoichiometric composition of the film layer are also more stable.

[0054] Figure 5 , 6 The structure of the conveying assembly of this embodiment is shown. As stated above, the conveying assembly is composed of a conveying module 160 and a tray 110. The conveying module 160 here can be a screw slide, a transmission roller, a transmission belt, etc. The tray 110 is mainly used to carry the coated substrate 111, and the conveying module 160 provides power so that the substrate 111 can move quickly in front of the air port module 140. The movement here can refer to reciprocating movement or unidirectional linear movement.

[0055] from Figure 5 , 6 It can be seen that the width of the substrate 111 in this embodiment is smaller than the effective jet width of the gas port module 140, while the width of the tray 110 is larger than the width of the exhaust zone of the gas port module 140. At the same time, the blank length of the tray 110 along the conveying direction is larger than the length of the gas port module 140. The purpose is to form a certain degree of closure to prevent the airflow from directly passing through the conveying component when the coated substrate 111 is located in the gas port area (defined by 141 and 149), so that the two process gas purge areas can form independent and stable areas respectively, and effectively recover the waste gas at the same time. Figure 5 At the same time, a preferred design scheme of the air extraction port is shown, that is, the two ends of the air ports 142, 144, 146, and 148 of each air extraction module are connected together, and the air ports 143, 145, and 147 located between them are framed within their range. Compared with Figure 2 The middle structure is more conducive to stabilizing the gas field environment in the internal deposition area.

[0056] The perovskite solar light absorption layer of the present embodiment is formed by adsorption of the precursor on the substrate in the gas phase. No solution is involved in the deposition process, and there is no need to worry about stripes and bubbles. By purging argon gas, nitrogen gas, etc. used for isolation and cooperating with vacuuming, cross-reaction between the first process gas and the second process gas and gas agglomeration are prevented, and the influence of ambient particles, water vapor, etc. is isolated to prevent these factors from changing the uniformity and stability of the chemical composition of the substrate. Not only can the deposition process of the present embodiment be carried out under normal pressure, but also the preparation of high-quality and high-uniformity light absorption layers is achieved.

[0057] In addition, the width of the deposition channel of the device of this embodiment can be prepared to be very large without affecting the high quality and high uniformity of the light absorbing layer, and the substrate can be driven to move back and forth in the deposition channel by the conveying component to obtain the required thickness, which can well control the cost of the device. The device of this embodiment is well suitable for preparing the perovskite solar light absorbing layer of a flexible substrate.

[0058] The method for preparing the perovskite solar light absorption layer using the equipment of this embodiment is as follows: Figure 7 As shown, the following steps are included:

[0059] Step S101, controlling the heating module 170 to heat, and preheating the tray 110, the deposition channel 150 and the coating substrate (carried by the tray 110) (the temperature is controlled between 25-300° C.);

[0060] Step S102, heating the organic source and the inorganic source to make them sublime and mix with the carrier gas;

[0061] Step S103, control the first isolation gas path 131, the second isolation gas path 135, the third isolation gas path 139, the first process gas path 133, the second process gas path 137, the first exhaust gas path 132, the second exhaust gas path 134, the third exhaust gas path 136, the fourth exhaust gas path 138 and the first process gas blowing port 143, the second process gas blowing port 147, the first isolation gas blowing port 141, the second isolation gas blowing port 145, the third isolation gas blowing port 149, the first exhaust port 142, the second exhaust port 144, the third exhaust port 146, and the fourth exhaust port 148 to remain open;

[0062] Step S104, controlling the conveying module 160 to start, so that the coated substrate reciprocates in the deposition channel 150, and sequentially absorbs the first process gas blown out from the first process gas blowing port 143 and the second process gas blown out from the second process gas blowing port 147 for multiple times, so as to obtain a film layer of desired thickness;

[0063] Step S105, keep the deposited film layer warm (between 50 and 300°C) for a period of time and then cool it down at a controlled speed (1 to 60°C / minute), in order to increase the crystallinity of the film, reduce the defect density, improve the uniformity and coverage of the film, and improve the photoelectric conversion efficiency.

[0064] The above is only a preferred embodiment of the present invention. For those skilled in the art, the present invention may have various modifications, such as providing more process gas purge ports, and providing more process gas purge modules. The organic source and inorganic source used in each process gas purge module may be the same or different. In short, any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A device for preparing a perovskite solar light absorption layer, characterized in that: It comprises a deposition chamber, a conveying assembly, a heating module and a gas purge module, wherein the gas inlet of the gas purge module and the conveying assembly are arranged opposite to each other in the deposition chamber, and a deposition channel for the coated substrate to move is formed therebetween, the heating module is used to heat the coated substrate, the gas purge module comprises at least one first process gas purge module and at least one second process gas purge module, an isolation gas purge module and an exhaust module, wherein the gas inlet of the isolation gas purge module is arranged between and outside the gas inlets of each process gas purge module, and the gas inlet of the exhaust module is arranged between two gas inlets at intervals; The first process gas is a mixed gas brought out by a carrier gas after a single-component organic source is heated and sublimated; The second process gas is a mixed gas brought out by a carrier gas after a single-component inorganic source is heated and sublimated; The conveying assembly is closed and does not allow airflow to directly penetrate when the coated substrate is located in the air port area; During coating, the air inlets of the isolation gas purge module and the process gas purge module both blow out strip-shaped airflows, and the conveying assembly supports the coated substrate to allow it to pass through the range of the strip-shaped airflow, so that the strip-shaped airflows blown out by the first and second process gas purge modules sweep across the surface of the coated substrate, and deposit to generate the perovskite solar light absorption layer. Excess gas is extracted from the air inlet of the exhaust module, and the length of the exhaust port is greater than or equal to the length of the air inlets of the isolation gas purge module and the process gas purge module.

2. The device according to claim 1, characterized in that The first process gas of the first process gas purge module adopts the same or different organic sources, and the organic source is FAI, FACl, FABr, MAI, MACl, MABr or PEAI.

3. The device according to claim 1, characterized in that The second process gas of the second process gas purge module adopts the same or different inorganic sources, and the inorganic source is PbI2, PbBr2, PbCl2, CsI, CsCl or CsBr.

4. The device according to claim 1, characterized in that The gas ports of the first process gas purge module, the second process gas purge module, the isolation gas purge module and the exhaust module are arranged together to form an integrated structure.

5. The device according to claim 4, characterized in that The gas paths of the gas ports of the isolation gas purge module are interconnected, and the gas paths of the gas ports of the exhaust module are interconnected.

6. The device according to claim 1, characterized in that The gas inlets of the isolation gas purge module and the process gas purge module are both designed with slits.

7. The device according to claim 6, characterized in that The air inlet of the air extraction module is also a slit, and the two ends of the air inlet of each air extraction module are connected together respectively, and the air inlet frame located between them is within its range.

8. A method for preparing a perovskite solar light absorption layer using the device according to any one of claims 1 to 7, characterized in that it comprises the following steps: The heating module is turned on to preheat the coated substrate, and the gas purge module is turned on, and then the conveying component is controlled to drive the coated substrate to move back and forth in the deposition channel, and the first process gas and the second process gas are adsorbed multiple times to obtain a perovskite solar absorption layer of the required thickness, and finally the perovskite solar absorption layer is annealed.

9. The method according to claim 8, characterized in that The preheating temperature is controlled between 25-300℃.

10. The method according to claim 8, characterized in that During annealing, the annealing temperature is controlled between 25-300°C.

Images