LED, light source and display device

Abstract

The invention discloses an LED, a light source and a display device, relates to the technical field of photoelectrons, and can improve the light emitting efficiency of the light source on the basis of achieving light and thin light sources so as to improve the optical performance of the light source. The LED comprises a substrate, the substrate comprises a first area and a second area, the second area surrounds the first area, the substrate comprises a protruding part, the protruding part is located in the first area, and the thickness of the substrate in the first area is larger than that of the substrate in the second area; the light-emitting structure is arranged on the side, provided with the protruding part, of the substrate, the light-emitting structure is located in the first area of the substrate, the light-emitting structure is connected with the protruding part, and the light-emitting structure comprises a first connecting pad and a second connecting pad; one end of the first bonding pad is electrically connected with the first connecting pad, and the other end of the first bonding pad is connected with the substrate in the second area; one end of the second bonding pad is electrically connected with the second connecting pad, and the other end of the second bonding pad is connected with the substrate in the second area.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to an LED, a light source and a display device. Background Art

[0002] At present, the thinning and lightening of light sources has become an important development direction for LED (Lighting Emitting Diode) related light-emitting devices, especially in liquid crystal display products, where the thickness of the backlight source directly affects the thickness of the display product. Existing backlight sources have optical films such as diffusers, prisms, light collectors, and light guides, which are not only thick but also costly. However, too many optical films can be removed to achieve the thinning and lightening of the backlight source, but the backlight source without the optical film has the problem of low light output efficiency, which directly affects the optical performance of the backlight source. Summary of the invention

[0003] The embodiments of the present application provide an LED, a light source, and a display device, which can improve the light output efficiency of the light source while making the light source thinner and lighter, thereby improving the optical performance of the light source.

[0004] In a first aspect of an embodiment of the present application, there is provided an LED, comprising:

[0005] A substrate, the substrate comprising a first region and a second region, the second region surrounding the first region, the substrate comprising a protrusion, the protrusion being located in the first region, and a thickness of the substrate in the first region being greater than a thickness of the substrate in the second region;

[0006] a light emitting structure, disposed on a side of the substrate having the protrusion, the light emitting structure being located in the first region of the substrate, the light emitting structure being connected to the protrusion, and comprising a first connection pad and a second connection pad;

[0007] a first pad, one end of which is electrically connected to the first connection pad, and the other end of which is connected to the substrate of the second region;

[0008] The second pad has one end electrically connected to the second connection pad and the other end connected to the substrate in the second region.

[0009] In some embodiments, the orthographic projection of the first pad on the substrate covers at least a portion of a boundary between the first region and the second region;

[0010] The orthographic projection of the second pad on the substrate covers at least a portion of a boundary between the first region and the second region.

[0011] In some embodiments, the ratio of the thickness of the substrate in the second region to the thickness of the substrate in the first region ranges from 1 / 4 to 3 / 4; and / or,

[0012] The distance between the side of the light emitting structure away from the substrate and the side of the substrate close to the light emitting structure is a first distance, the thickness difference between the substrate in the first area and the substrate in the second area is a second distance, and the first distance is smaller than the second distance.

[0013] In some embodiments, the light emitting structure includes a first electrode, a light emitting layer, a second electrode, a first insulating layer, a first connecting electrode and a second connecting electrode, the light emitting layer is disposed between the first electrode and the second electrode, and the first insulating layer includes a first through hole and a second through hole;

[0014] One end of the first connection electrode is electrically connected to the first electrode through the first through hole, and the other end of the first connection electrode is electrically connected to the first pad;

[0015] One end of the second connection electrode is electrically connected to the second electrode through the second through hole, and the other end of the second connection electrode is electrically connected to the second pad.

[0016] In some embodiments, a side of the first electrode close to the substrate is connected to the protrusion;

[0017] An orthographic projection area of ​​the second through hole on the substrate is greater than twice an orthographic projection area of ​​the first through hole on the substrate.

[0018] In some embodiments, the first electrode, the light-emitting layer, and the second electrode are stacked in a thickness direction of the substrate, and the first electrode is disposed between the substrate and the light-emitting layer;

[0019] The orthographic projections of the light-emitting layer and the second electrode on the substrate both fall within the orthographic projection of the first electrode on the substrate;

[0020] The orthographic projection of the first through hole on the substrate falls within the orthographic projection of the first electrode on the substrate, and the orthographic projection of the second through hole on the substrate falls within the orthographic projection of the second electrode on the substrate.

[0021] In some embodiments, the first electrode includes an overlapping region and an exposed region, the orthographic projections of the second electrode and the light-emitting layer on the first electrode fall within the overlapping region, and the first electrode in the exposed region is exposed relative to the second electrode and the light-emitting layer;

[0022] The first electrode in the overlapping area is covered by the light-emitting layer, and the orthographic projection of the first through hole on the first electrode falls into the exposed area.

[0023] In some embodiments, the LED further comprises:

[0024] A second insulating layer is disposed on a side of the light emitting structure away from the substrate;

[0025] The second insulating layer covers the first connecting electrode and the second connecting electrode;

[0026] The second insulating layer comprises a third through hole and a fourth through hole, the third through hole is used to expose a portion of the first connection electrode, the first connection pad is the first connection electrode exposed by the third through hole, the fourth through hole is used to expose a portion of the second connection electrode, and the second connection pad is the second connection electrode exposed by the fourth through hole;

[0027] The first pad is electrically connected to the first connection electrode through the third through hole, and the second pad is electrically connected to the second connection electrode through the fourth through hole.

[0028] In some embodiments, the first insulating layer wraps at least part of the edges and sidewalls in the thickness direction of the first electrode, the light-emitting layer and the second electrode; and / or,

[0029] The first connecting electrode is disposed between the first insulating layer and the second insulating layer, and the second connecting electrode is disposed between the first insulating layer and the second insulating layer; and / or,

[0030] An orthographic projection of the second insulating layer on the substrate covers the first region.

[0031] In some embodiments, the third through hole is closer to the edge of the substrate relative to the first through hole, and the fourth through hole is closer to the edge of the substrate relative to the second through hole;

[0032] The first through hole corresponds to one end of the first connecting electrode, and the third through hole corresponds to the other end of the first connecting electrode;

[0033] The second through hole corresponds to one end of the second connecting electrode, and the fourth through hole corresponds to the other end of the second connecting electrode;

[0034] The orthographic projections of the third through hole and the fourth through hole on the substrate both fall within the first region;

[0035] One end of the first connection electrode away from the first through hole is connected to the protruding portion, and / or one end of the second connection electrode away from the second through hole is connected to the protruding portion.

[0036] In some embodiments, the first pad covers at least a portion of an edge of the protrusion; and / or,

[0037] The second pad covers at least a portion of the edge of the protruding portion; and / or,

[0038] The second insulating layer is disposed between the first pad and the protruding portion, and the second insulating layer is disposed between the second pad and the protruding portion; and / or,

[0039] The second insulating layer is disposed between the first pad and the substrate in the second region, and the second insulating layer is disposed between the second pad and the substrate in the second region.

[0040] In some embodiments, the reflectivity of the second insulating layer is greater than 99%.

[0041] In some embodiments, the second insulating layer includes a distributed Bragg reflector.

[0042] In some embodiments, the orthographic projection of the second insulating layer on the substrate covers the substrate;

[0043] The second insulating layer comprises an opening, and a second connecting electrode is arranged between the opening and the second through hole;

[0044] The orthographic projection of the opening on the substrate covers the orthographic projection of the light-emitting layer on the substrate; and / or,

[0045] The orthographic projection of the opening on the substrate covers the orthographic projection of the second through hole on the substrate; and / or,

[0046] An orthographic projection of the opening on the substrate covers an orthographic projection of the second electrode on the substrate.

[0047] In some embodiments, the LED further comprises:

[0048] The first reflective layer is arranged on a side of the substrate away from the light emitting structure.

[0049] According to a second aspect of the embodiments of the present application, a light source is provided, including:

[0050] A substrate, comprising a plurality of first grooves and a plurality of second grooves, wherein the second grooves surround the first grooves, and the groove bottoms of the second grooves are connected to the groove openings of the first grooves;

[0051] A plurality of LEDs according to any one of claims 1 to 15, wherein a side of the LED having the protrusion is arranged opposite to a side of the substrate having the first groove;

[0052] The light emitting structure of the LED is at least partially embedded in the first groove, and the base of the LED is at least partially embedded in the second groove.

[0053] In some embodiments, the raised portion of the LED is at least partially embedded in the first groove;

[0054] The substrate of the second region of the LED is at least partially embedded in the second groove.

[0055] In some embodiments, part of the protrusion is embedded in the first groove, and part of the protrusion is embedded in the second groove.

[0056] In some embodiments, the inner diameter of the second groove is greater than the inner diameter of the first groove, and a step structure is formed at the junction of the inner walls of the first groove and the second groove;

[0057] The first pad and the second pad are respectively connected to the step structures at different positions through welding structures.

[0058] In some embodiments, the light source further comprises:

[0059] quantum dot layer;

[0060] Scattering layer;

[0061] Quantum dot encapsulation layer;

[0062] The quantum dot layer, the scattering layer and the quantum dot encapsulation layer are all arranged on a side of the light-emitting structure away from the substrate, and the quantum dot layer, the scattering layer and the quantum dot encapsulation layer are stacked in a thickness direction;

[0063] The quantum dot layer and the scattering layer are both embedded in the substrate.

[0064] In some embodiments, the quantum dot layer, the scattering layer and the quantum dot encapsulation layer are all disposed in the first groove;

[0065] The quantum dot layer is arranged between the scattering layer and the quantum dot encapsulation layer, and the quantum dot layer is arranged on a side of the quantum dot encapsulation layer away from the light emitting structure.

[0066] In some embodiments, the substrate further includes a third groove, the third groove is disposed on a side of the substrate away from the first groove, and a notch of the third groove is away from a notch of the first groove;

[0067] The quantum dot encapsulation layer is arranged on the side of the substrate away from the LED, the quantum dot layer and the scattering layer are both arranged in the third groove, the scattering layer is arranged between the quantum dot layer and the quantum dot encapsulation layer, and the orthographic projection of the third groove on the substrate falls within the orthographic projection of the quantum dot encapsulation layer on the substrate.

[0068] In some embodiments, the light source further comprises:

[0069] An organic insulating layer is disposed on a side of the substrate away from the light-emitting structure;

[0070] A second reflective layer is disposed on a side of the organic insulating layer away from the substrate, wherein a connection interface between the second reflective layer and the organic insulating layer comprises a concave-convex curved surface, wherein the concave-convex curved surface comprises a plurality of alternately connected concave surfaces and convex surfaces;

[0071] an ink layer, disposed on a side of the second reflective layer away from the substrate, wherein the reflectivity of the ink layer is greater than the absorbance, and / or the reflectivity of the ink layer is greater than the transmittance;

[0072] The substrate comprises a first groove region and a barrier region, the barrier region surrounds the first groove region, and the first groove and the second groove are both arranged in the first groove region;

[0073] Part of the organic insulating layer covers a side of the base away from the light emitting structure, and part of the organic insulating layer covers the substrate in the barrier area.

[0074] According to a third aspect of the embodiments of the present application, a display device is provided, including:

[0075] The light source as described in the second aspect.

[0076] The LED provided in the embodiment of the present application can form a stepped structure on the side surface of the LED in the thickness direction by arranging a protrusion on the substrate and arranging a light-emitting structure on the protrusion. The step structure on the side wall can be inverted at the edge of the LED, which can facilitate obtaining a thin and light LED light source. The light-emitting structure and the protrusion that are protruding relative to the edge of the substrate can be used to fill the cavity formed by the inverted setting of the LED, thereby greatly reducing the volume of the cavity formed between the LED and the light source substrate, shortening the optical path, and thereby reducing the cavity effect formed by the inverted LED, which can increase the amount of light emitted from the light source substrate, improve the light extraction efficiency, increase the brightness of the light source, and enhance the optical performance of the LED light source. BRIEF DESCRIPTION OF THE DRAWINGS

[0077] Figure 1 A schematic cross-sectional structure diagram of an LED provided in an embodiment of the present application;

[0078] Figure 2 A schematic structural diagram of an LED light source provided in an embodiment of the present application;

[0079] Figure 3 A schematic cross-sectional structural diagram of another LED provided in an embodiment of the present application;

[0080] Figure 4 A schematic cross-sectional structure diagram of another LED provided in an embodiment of the present application;

[0081] Figure 5 A schematic cross-sectional structure diagram of another LED provided in an embodiment of the present application;

[0082] Figure 6 A schematic partial cross-sectional structure diagram of a light source provided in an embodiment of the present application;

[0083] Figure 7 A partial cross-sectional structural diagram of a substrate of a light source provided in an embodiment of the present application;

[0084] Figure 8 A schematic partial cross-sectional structural diagram of another light source provided in an embodiment of the present application;

[0085] Fig. 9 A schematic partial cross-sectional structure diagram of another light source provided in an embodiment of the present application;

[0086] Fig.10 A schematic partial cross-sectional structure diagram of another light source provided in an embodiment of the present application;

[0087] Fig.11 A schematic partial top view of a light source provided in an embodiment of the present application;

[0088] Fig.12 A cross-sectional structural diagram of a light source along A2-A1 provided in an embodiment of the present application;

[0089] Fig.13 A schematic structural diagram of a display device provided in an embodiment of the present application;

[0090] Fig.14 A schematic flow chart of a method for preparing an LED provided in an embodiment of the present application;

[0091] Fig.15 A schematic flow chart of another method for preparing an LED provided in an embodiment of the present application;

[0092] Fig.16 A schematic flow chart of another method for preparing a light source provided in an embodiment of the present application;

[0093] Fig.17 A schematic flow chart of a method for preparing another light source provided in an embodiment of the present application. DETAILED DESCRIPTION

[0094] In order to better understand the technical solutions provided by the embodiments of this specification, the technical solutions of the embodiments of this specification are described in detail below through the accompanying drawings and specific embodiments. It should be understood that the embodiments of this specification and the specific features in the embodiments are detailed descriptions of the technical solutions of the embodiments of this specification, rather than limitations on the technical solutions of this specification. In the absence of conflict, the embodiments of this specification and the technical features in the embodiments can be combined with each other.

[0095] In this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the term "comprise", "include" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements not only includes those elements, but also includes other elements not clearly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements limited by the statement "comprise one..." do not exclude the existence of other identical elements in the process, method, article or equipment including the elements. The term "more than two" includes two or more than two situations.

[0096] At present, the thinning and lightening of light sources has become an important development direction for LED-related light-emitting devices, especially in liquid crystal display products, where the thickness of the backlight source directly affects the thickness of the display product. Existing backlight sources have optical films such as diffusers, prisms, light collectors, and light guides, which are not only thick but also costly. However, too many optical films can be removed to achieve a thin and light backlight source, but the backlight source without the optical film has the problem of low light output efficiency, which directly affects the optical performance of the backlight source.

[0097] In view of this, the embodiments of the present application provide an LED, a light source and a display device, which can improve the light output efficiency of the light source while achieving a light-weight and thin light source, thereby improving the optical performance of the light source.

[0098] In a first aspect of an embodiment of the present application, an LED is provided. Figure 1 This is a schematic cross-sectional structure diagram of an LED provided in an embodiment of the present application. Figure 1As shown, the LED includes: a substrate 100, a light emitting structure 200, a first pad 300 and a second pad. The substrate 100 includes a first region 101 and a second region 102, the second region 102 surrounds the first region 101, the substrate 100 includes a protrusion 110, the protrusion 110 is located in the first region 101, and the thickness of the substrate 100 in the first region 101 is greater than the thickness of the substrate 100 in the second region 102; due to the setting of the protrusion 110, the thickness of the first region 101 is greater than the thickness of the second region 102, that is, H1 is greater than H2. Exemplarily, the protrusion 110 can be formed by etching the substrate 100 in the second region. Exemplarily, the substrate 100 can be a sapphire material, or other substrate materials, which is not specifically limited in the embodiments of the present application. The protrusion 110 can be set upside down on the edge of the LED. By using the protrusion of the first area 101 of the base 100 and the thinning of the second area 102, the protrusion can be inverted in the substrate groove of the light source, thereby realizing the inversion of the LED on the light source substrate and reducing the thickness of the light source.

[0099] For example, Figure 1 As described, the light emitting structure 200 is arranged on the side of the substrate 100 having the protrusion 110, the light emitting structure 200 is located in the first area 101 of the substrate 100, the light emitting structure 200 is connected to the protrusion 110, and the light emitting structure 200 includes a first connection pad 251 and a second connection pad 261; one end of the first pad 300 is electrically connected to the first connection pad 251, and the other end of the first pad 300 is connected to the substrate 100 in the second area 102; one end of the second pad 400 is electrically connected to the second connection pad 261, and the other end of the second pad 400 is connected to the substrate 100 in the second area 102. Exemplarily, one end of the first pad 300 is electrically connected to the light emitting structure 200, and the other end can be used to electrically connect the driving circuit, and the driving circuit can be integrated on the substrate of the light source; one end of the second pad 400 is electrically connected to the light emitting structure 200, and the other end is also used to electrically connect the driving circuit. The driving circuit can provide a driving signal to the light emitting structure 200 to drive the light emitting structure 200 to emit light. The protrusion 110 can form a step structure on one side of the substrate 100, which is convenient for achieving the effect of thinning the inverted LED. The light emitting structure 200 is arranged on the protrusion 110, and the light emitting structure 200 can extend the protrusion thickness of the protrusion 110, so that the LED can be further inverted and embedded in the substrate of the light source, thereby enhancing the thinning effect of the light source.

[0100] It should be noted that Figure 2 This is a schematic structural diagram of an LED light source provided in an embodiment of the present application. Figure 2As shown, the LED is inverted on the driving backplane S1 of the light source, which can achieve a certain degree of thinness and lightness. However, due to the presence of a cavity S2 between the LED and the light source driving backplane S1, the degree of thinness and lightness is greatly limited. In addition, after the light emitting area Light of the LED emits light and enters the cavity S2, multiple light-sparse to light-dense reflection interfaces are formed. The LED light is easily reflected multiple times in the cavity S2 and is easily absorbed by the interface, metal wiring, etc. Therefore, the light utilization efficiency of the light source of the existing inverted LED setting is poor, and the light extraction efficiency is low, which directly affects the brightness of the light source and other optical properties. Figure 2 The arrows shown illustrate the propagation of light.

[0101] The LED provided in the embodiment of the present application can form a stepped step structure on the side surface of the LED in the thickness direction by setting a protrusion 110 on the substrate 100 and setting a light-emitting structure 200 on the protrusion 110. The step structure on the side wall can be set inverted at the edge of the LED, which can facilitate the acquisition of a thin and light LED light source. The light-emitting structure 200 and the protrusion 110 that are set protruding relative to the edge of the substrate 100 can be used to fill the cavity formed by the inverted setting of the LED, thereby greatly reducing the volume of the cavity formed between the LED and the light source substrate, shortening the optical path, and thereby reducing the cavity effect formed by the inverted LED, thereby increasing the amount of light emitted from the light source substrate, improving the light extraction efficiency, improving the light source brightness, and enhancing the optical performance of the LED light source.

[0102] In some embodiments, Figure 1 As shown, the orthographic projection of the first pad 300 on the substrate 100 covers at least part of the boundary between the first area 101 and the second area 102; the orthographic projection of the second pad 400 on the substrate 100 covers at least part of the boundary between the first area 101 and the second area 102. The first pad 300 and the second pad 400 cover the step structure formed by the substrate 100 between the protrusion 110 and the second area 102, and the electrode of the light-emitting structure 200 can be electrically connected to the external driving circuit to realize the light-emitting drive of the light-emitting structure 200.

[0103] In some embodiments, Figure 1 As shown, the ratio of the thickness of the substrate 100 of the second area 102 to the thickness of the substrate of the first area 101 can range from 1 / 4 to 3 / 4; that is, the range of H2 / H1 can be 1 / 4 to 3 / 4, for example, it can be 1 / 2, etc., which can ensure sufficient step difference of the side step structure formed by the protrusion 110 and better reduce the cavity effect.

[0104] In some embodiments, the distance between the side of the light-emitting structure 200 away from the substrate 100 and the side of the substrate 100 close to the light-emitting structure 200 is a first distance L1, and the thickness difference between the substrate 100 in the first region 101 and the substrate in the second region 102 is a second distance L2. The first distance L1 is less than the second distance L2, that is, L1 < L2. Generally, the film layers of the light-emitting structure 200 are all thin films and the overall thickness is not very thick. Therefore, it is necessary to ensure that the thickness step of the convex portion 110 is sufficient to weaken the cavity effect.

[0105] In some embodiments, Figure 3 is a schematic cross-sectional structure diagram of another LED provided by an embodiment of the present application. As Figure 3 shown, the light-emitting structure 200 includes a first electrode 210, a light-emitting layer 220, a second electrode 230, a first insulating layer 240, a first connection electrode 250, and a second connection electrode 260. The light-emitting layer 220 is disposed between the first electrode 210 and the second electrode 230. The first insulating layer 240 includes a first through hole 241 and a second through hole 242; the light-emitting layer 220 can emit light under the drive of the first electrode 210 and the second electrode 230. One end of the first connection electrode 250 is electrically connected to the first electrode 210 through the first through hole 241, and the other end of the first connection electrode 250 is electrically connected to the first pad 300; one end of the second connection electrode 260 is electrically connected to the second electrode 230 through the second through hole 242, and the other end of the second connection electrode 260 is electrically connected to the second pad 400.

[0106] Exemplarily, the light-emitting layer 220 may include multiple quantum well material layers. The first electrode 210 may serve as the negative electrode of the LED, and the second electrode 230 may serve as the positive electrode of the LED. The first electrode 210 may include N-GaN (N-type doped GaN), and the second electrode 230 may include P-GaN (P-type doped GaN). The first through hole 241 and the second through hole 242 may be formed by etching. The first insulating layer 240 may adopt an inorganic insulating material, such as silicon nitride or silicon oxide, etc. The first connection electrode 250 and the second connection electrode 260 may adopt a transparent electrode, such as ITO (indium tin oxide). The light emitted by the light-emitting layer 220 may be emitted in a direction away from the substrate 100. Therefore, using transparent electrodes for the first connection electrode 250 and the second connection electrode 260 can improve the light transmittance and the light extraction efficiency.

[0107] In some embodiments, as Figure 3As shown, the side of the first electrode 210 close to the substrate 100 is connected to the protrusion 110; the first electrode 210 is arranged close to the substrate 100. The orthographic projection area of ​​the second through hole 242 on the substrate 100 is greater than twice the orthographic projection area of ​​the first through hole 241 on the substrate 100. The second through hole 242 can be used as a light outlet opening of the LED, and the first through hole 241 is only used as a connecting via hole. Therefore, the second through hole 242 needs to be set large enough to ensure sufficient light output, so that more light emitted by the light-emitting layer 220 can be emitted.

[0108] In some embodiments, Figure 3 As shown, the first electrode 210, the light-emitting layer 220 and the second electrode 230 are stacked in the thickness direction H of the substrate 100, and the first electrode 210 is arranged between the substrate 100 and the light-emitting layer 220; the orthographic projections of the light-emitting layer 220 and the second electrode 230 on the substrate 100 both fall within the orthographic projection of the first electrode 210 on the substrate 100; the orthographic projection of the first through hole 241 on the substrate 100 falls within the orthographic projection of the first electrode 210 on the substrate 100, and the orthographic projection of the second through hole 242 on the substrate 100 falls within the orthographic projection of the second electrode 230 on the substrate 100. The first electrode 210 includes an overlapping region 211 and an exposed region 212. The orthographic projections of the second electrode 230 and the light-emitting layer 220 on the first electrode 210 fall into the overlapping region 211. The first electrode 210 in the exposed region 212 is exposed relative to the second electrode 230 and the light-emitting layer 220. The first electrode 210 in the overlapping region 211 is covered by the light-emitting layer 220, and the orthographic projection of the first through hole 241 on the first electrode 210 falls into the exposed region 212. The edge of the first electrode 210 exceeds the edge of the light-emitting layer 220 and the second electrode 230, so that the exposed part of the second electrode 230 can be used to correspond to the first through hole 241, so that the first connection electrode 250 is electrically connected to the first electrode 210 through the first through hole 241.

[0109] Exemplarily, the first electrode 210, the light-emitting layer 220 and the second electrode 230 can be arranged in a positional relationship according to the actual requirements of the light emitting direction. The first electrode 210, the light-emitting layer 220 and the second electrode 230 can also be stacked perpendicular to the thickness direction H, which is not specifically limited in the embodiments of the present application.

[0110] In some embodiments, reference Figure 3The LED may further include: a second insulating layer 270, the second insulating layer 270 is disposed on a side of the light emitting structure 200 away from the substrate 100, and the second insulating layer 270 is disposed on a side of the first connection electrode 250 and the second connection electrode 260 away from the substrate 100; the second insulating layer 270 covers the first connection electrode 250 and the second connection electrode 260; the second insulating layer 270 includes a third through hole 271 and a fourth through hole 272, the third through hole 271 is used to expose a portion of the first connection electrode 250, the first connection pad 251 is the first connection electrode 250 exposed by the third through hole 271, and the fourth through hole 272 It is used to expose part of the second connection electrode 260, and the second connection pad 261 is the second connection electrode 260 exposed by the fourth through hole 272; the first pad 300 is electrically connected to the first connection electrode 250 through the third through hole 271, that is, the first pad 300 is electrically connected to the first connection pad 251 through the third through hole 271, and is electrically connected to the first connection electrode 250 through the first connection pad 251; the second pad 400 is electrically connected to the second connection electrode 260 through the fourth through hole 272, that is, the second pad 400 is electrically connected to the second connection pad 261 through the fourth through hole 272, and then electrically connected to the second connection electrode 260. Therefore, the first pad 300 is electrically connected to the first electrode 210 through the first connection electrode 250, and the second pad 400 is electrically connected to the second electrode 230 through the second connection electrode 260.

[0111] Exemplary, reference Figure 3 , the third through hole 271 is closer to the edge of the substrate 100 relative to the first through hole 241, and the fourth through hole 272 is closer to the edge of the substrate 100 relative to the second through hole 242; the first through hole 241 corresponds to one end of the first connecting electrode 250, and the third through hole 271 corresponds to the other end of the first connecting electrode 250; the second through hole 242 corresponds to one end of the second connecting electrode 260, and the fourth through hole 272 corresponds to the other end of the second connecting electrode 260; the orthographic projections of the third through hole 271 and the fourth through hole 272 on the substrate 100 both fall within the first area 101; the end of the first connecting electrode 250 away from the first through hole 241 is connected to the protrusion 110, and the end of the second connecting electrode 260 away from the second through hole 242 is connected to the protrusion 110. Then at least two first step structures 103 can be formed on the side wall of the LED in the thickness direction H, such as Figure 3 The position is indicated by the dotted oval.

[0112] Exemplary, reference Figure 3 The first insulating layer 240 is used to isolate the first electrode 210, the light emitting layer 220 and the second electrode 230 from the first connecting electrode 250 and the second connecting electrode 260 respectively.

[0113] Exemplary, reference Figure 3The first insulating layer 240 wraps at least part of the edge and the sidewall in the thickness direction of the first electrode 210, the light emitting layer 220 and the second electrode 230. The first connecting electrode 250 is disposed between the first insulating layer 240 and the second insulating layer 270, and the second connecting electrode 260 is disposed between the first insulating layer 240 and the second insulating layer 270. The orthographic projection of the second insulating layer 270 on the substrate 100 covers the first region 101.

[0114] Exemplary, reference Figure 3 The first pad 300 covers at least a portion of the edge of the protruding portion 110. The second pad 400 covers at least a portion of the edge of the protruding portion 110. A second insulating layer 270 is provided between the first pad 300 and the protruding portion 110, and a second insulating layer 270 is provided between the second pad 400 and the protruding portion 110.

[0115] In some embodiments, Figure 4 This is a schematic cross-sectional structure diagram of another LED provided in an embodiment of the present application. Figure 4 As shown, a second insulating layer 270 is disposed between the first pad 300 and the substrate 100 in the second region 102 , and a second insulating layer 270 is disposed between the second pad 400 and the substrate 100 in the second region 102 .

[0116] In some examples, the reflectivity of the second insulating layer 270 may be greater than 99%. The second insulating layer 270 may include a DBR (distributed Bragg reflector). When the second insulating layer 270 is made of a material with a relatively high reflectivity, the second insulating layer 270 may cover the entire substrate 100. The DBR may cover the entire LED.

[0117] Exemplary, reference Figure 4 , the orthographic projection of the second insulating layer 270 on the substrate 100 covers the substrate 100; the second insulating layer 270 includes an opening 273, and a second connecting electrode 260 is disposed between the opening 273 and the second through hole 242; the orthographic projection of the opening 273 on the substrate 100 covers the orthographic projection of the light-emitting layer 220 on the substrate 100. The orthographic projection of the opening 273 on the substrate 100 covers the orthographic projection of the second through hole 242 on the substrate 100. The orthographic projection of the opening 273 on the substrate 100 covers the orthographic projection of the second electrode 260 on the substrate 100.

[0118] In some embodiments, Figure 5 This is a schematic cross-sectional structure diagram of another LED provided in an embodiment of the present application. Figure 5 As shown, the LED may further include a first reflective layer 500 , which is disposed on a side of the substrate 100 away from the light emitting structure 200 , and the first reflective layer 500 is disposed on a side of the substrate 100 away from the protrusion 110 .

[0119] It should be noted that the LED provided in the embodiment of the present application may be a structure with a size miniaturized to the order of hundreds of microns. For example, the area of ​​the light emitting region of the LED may be 1 mm 2 Below, or below 10000μm2, further can be 3000μm 2 Below, or 700μm 2 Below, even below 200μm 2 the following.

[0120] According to a second aspect of the embodiments of the present application, a light source is provided. Figure 6 A schematic partial cross-sectional structure diagram of a light source provided in an embodiment of the present application; Figure 7 A partial cross-sectional structure diagram of a substrate of a light source provided in an embodiment of the present application. Figure 6 and Figure 7 The light source may include: a substrate 600 and an LED as provided in the first aspect, wherein the substrate 600 may include a plurality of first grooves 610 and a plurality of second grooves 620, wherein the second grooves 620 surround the first grooves 610, and the groove bottom of the second grooves 620 is connected to the notch of the first grooves 610, that is, the second grooves 620 are sleeved with the first grooves 610. The plurality of LEDs may be arranged in an array on the substrate 600, and the substrate 600 may be provided with a driving circuit, which may be electrically connected to the LEDs, and the driving circuit may drive the LEDs to emit light. The side of the LED having the protrusion 110 is arranged opposite to the side of the substrate 600 having the first groove 610; the light emitting structure 200 of the LED is at least partially embedded in the first groove 610, and the base 100 of the LED is at least partially embedded in the second groove 620.

[0121] It should be noted that the light source provided in the embodiment of the present application can be used as a backlight source for a liquid crystal panel, as an independent lighting source, or as an LED display substrate to directly use each LED as a pixel for image display, and the embodiment of the present application does not make any specific limitations.

[0122] It should be noted that the light emitted by the LED light emitting structure 200 can be emitted from the substrate side through the substrate 600 .

[0123] The light source provided in the embodiment of the present application is provided with a first groove 610 and a second groove 620 on one side of the substrate 600, and the first groove 610 is sleeved with the second groove 620. The first groove 610 and the second groove 620 are connected to form a large groove with a stepped sidewall, and the light emitting structure 200 of the LED, the protrusion 110, and at least part of the substrate 100 in the second area 102 can be embedded in the large groove, so that the LED can be inverted and the light source can be made thinner. In addition, the embedding of the light emitting structure 200 and the protrusion 110 can reduce the cavity, shorten the optical path, reduce or eliminate the cavity effect, improve the light extraction efficiency, and enhance the optical properties such as the brightness of the light source.

[0124] In some embodiments, Figure 6 As shown, the protrusion 110 of the LED is at least partially embedded in the first groove 610, and the base 100 of the second region 102 of the LED is at least partially embedded in the second groove 620. The embedding amount of the LED can be increased, and the light source can be further thinned.

[0125] In some embodiments, reference Figure 6 Part of the raised portion 110 is embedded in the first groove 610, and part of the raised portion 110 is embedded in the second groove 620, which can effectively utilize the shapes of the groove and the raised portion to match and increase the embedding amount.

[0126] In some embodiments, reference Figure 7 The inner diameter of the second groove 620 is greater than the inner diameter of the first groove 610, and a step structure is formed at the junction of the inner wall of the first groove 610 and the second groove, that is, Figure 7 As shown, a second step structure 630 is formed at the junction of the inner wall of the first groove 610 and the second groove; the first pad 300 and the second pad 400 are respectively connected by welding structures 700 to the step structures at different positions.

[0127] Exemplary, reference Figure 6 The welding structure 700 may include a first welding portion 710 and a second welding portion 720. The first welding portion 710 may be made of copper, and the second welding portion 720 may be made of Sn. This is only exemplary and is not intended to be a specific limitation. The welding structure 700 may be provided between the second step structure 630 and the first step structure 103.

[0128] In some embodiments, Figure 8 This is a schematic partial cross-sectional structure diagram of another light source provided in an embodiment of the present application. Figure 8As shown, the light source further includes: a quantum dot layer 640, a scattering layer 650 and a quantum dot encapsulation layer 660. The quantum dot layer 640, the scattering layer 650 and the quantum dot encapsulation layer 660 are all arranged on the side of the light emitting structure 200 away from the substrate 100, and the quantum dot layer 640, the scattering layer 650 and the quantum dot encapsulation layer 660 are stacked in the thickness direction; the quantum dot layer 640 and the scattering layer 650 are both embedded in the substrate 600.

[0129] Exemplary, reference Figure 8 The substrate 600 further includes a third groove 670, which is disposed on the side of the substrate 600 away from the first groove 610, and the notch of the third groove 670 is away from the notch of the first groove 610; the quantum dot encapsulation layer 660 is disposed on the side of the substrate 600 away from the LED, the quantum dot layer 640 and the scattering layer 650 are both disposed in the third groove 670, the scattering layer 650 is disposed between the quantum dot layer 640 and the quantum dot encapsulation layer 660, and the orthographic projection of the third groove 670 on the substrate 600 falls within the orthographic projection of the quantum dot encapsulation layer 660 on the substrate 600. The quantum dot encapsulation layer 660 covers the entire substrate 600, and can protect the quantum dot layer 640 and the scattering layer 650.

[0130] For example, Fig. 9 This is a schematic partial cross-sectional structure diagram of another light source provided in an embodiment of the present application. Fig. 9 As shown, the light source further includes an organic insulating layer 800 and a second reflective layer 900. The organic insulating layer 800 is disposed on a side of the substrate 100 away from the light emitting structure 200, that is, the organic insulating layer 800 is located on a side of the substrate 100 away from the substrate 600; the second reflective layer 900 is disposed on a side of the organic insulating layer 800 away from the substrate 100, and the connection interface between the second reflective layer 900 and the organic insulating layer 800 includes a concave-convex curved surface, and the concave-convex curved surface includes a plurality of alternately connected concave surfaces and convex surfaces. Figure 8 As shown, the arc-shaped protrusion of the convex surface protrudes toward the side where the second reflective layer 900 is located. The concave-convex surface of the interface of the second reflective layer 900 can reflect light, increase the amount of light emitted from the substrate side, and also achieve diffuse reflection to achieve the effect of uniform light.

[0131] Exemplary, reference Fig. 9 , a filling glue 607 is poured into the gap between the LED and the substrate 600. The filling glue 607 can fill the remaining cavity gap. The filling glue 607 can be an adhesive or a resin to prevent the LED light from being wasted due to multiple reflections in the cavity. The filling glue 607 can be set before the organic insulating layer 800 is set.

[0132] For example, Figure 8The concavo-convex curved surface shown can be obtained by preparing the organic insulating layer 800 in a printing manner, and then the second reflective layer 900 is disposed on the concavo-convex curved surface to form an interface of the concavo-convex curved surface.

[0133] In some examples, the arc-shaped protrusions of the concave-convex curved surface may protrude toward the side where the substrate 100 is located, which is not specifically limited in the embodiments of the present application.

[0134] Exemplarily, both the first reflective layer 500 and the second reflective layer 900 may be made of silver.

[0135] In some embodiments, Fig.10 This is a schematic partial cross-sectional structure diagram of another light source provided in an embodiment of the present application. Fig.10 As shown, the quantum dot layer 640 , the scattering layer 650 and the quantum dot encapsulation layer 660 are all arranged in the first groove 610 ; the quantum dot layer 640 is arranged between the scattering layer 650 and the quantum dot encapsulation layer 660 , and the quantum dot layer 640 is arranged on the side of the quantum dot encapsulation layer 660 away from the light emitting structure 200 .

[0136] In some examples, reference Fig.10 The light source further includes an ink layer 604, which is disposed on the side of the first reflective layer 500 away from the substrate 600. The reflectivity of the ink layer 604 is greater than the absorbency, and / or the reflectivity of the ink layer 604 is greater than the transmittance. The ink layer 604 can protect the LED and the quantum dot layer in the light source. The ink layer 604 can be made of white ink, which can have a large reflectivity, and reflect the light irradiated on the white ink to the side where the substrate 600 is located, thereby improving the light utilization rate and increasing the light extraction efficiency.

[0137] In some examples, combined Figure 8 The ink layer 604 may also be disposed on a side of the second reflective layer 900 away from the substrate 600 .

[0138] Exemplary, reference Figure 8 and Fig.10 The liner 600 includes a first groove area 601, a second groove area 602 and a barrier area 603, the barrier area 603 surrounds the first groove area 601, the first groove 610 and the second groove 620 are both arranged in the first groove area 601, and the third groove 670 is arranged in the second groove area 602.

[0139] Exemplary, reference Figure 8 Part of the organic insulating layer covers the side of the substrate 100 away from the light emitting structure, and part of the organic insulating layer 800 covers the substrate 600 in the barrier area 603 .

[0140] Exemplarily, the organic insulating layer 800 may be a whole surface of high-transmittance resin with a convex spherical shape formed on the surface, and a whole surface of silver is made on the convex spherical resin. The silver can be used as the second reflective layer 900, and the concave-convex surface can form a scattering interface.

[0141] Illustratively, the substrate 600 provided in the embodiment of the present application may include a glass substrate, or other substrates.

[0142] The LED provided in the embodiment of the present application etches the sapphire substrate, lowers the pad, highlights the light-emitting area, and shortens the optical path; a reflective layer is made on the sapphire surface, which can be a first reflective layer 500 or a second reflective layer 900, and cooperates with the opening 273 of the DBR as the second insulating layer 270 to make the LED emit light in a concentrated manner. Wet / dry etching is used to make grooves on the glass substrate in steps, fill the scattering layer and the quantum dot layer, and increase the LED placement groove, which can further reduce the thickness of the light source.

[0143] It should be noted that, illustratively, the first groove 610 and the third groove 670 of the glass substrate can be obtained by wet etching, and the second groove 620 can be obtained by dry etching.

[0144] For example, the first soldering portion 710 provided on the second step structure 630 may be a copper wire, one end of which is connected to the second soldering portion 720 and the other end of which is connected to the driving circuit. After the first soldering portion 710 and the second soldering portion 720 are connected, the connection with the first pad 300 and the second pad 400 may be a binding connection.

[0145] Exemplary, reference Fig.10 , the second welding part 720 can be solder paste, and the solder paste can be set on the first welding part 710 by coating, and the solder paste is heated to melt to complete the solid crystal. Filling glue 607 is poured into the gap between the LED and the substrate 600. The filling glue 607 can fill the remaining cavity gap. The filling glue 607 can be an adhesive or a resin to avoid the LED light from being wasted due to multiple reflections in the cavity. The filling glue 607 can be set before the ink layer 604 is set. The filling glue 607 can be set after the welding structure 700 is set. After the filling glue 607 fills the cavity, since there is reflective metal Ag on the sapphire surface and a hole DBR on the LED surface, the light is concentrated at the DBR hole and concentrated on the incident QD layer, maximizing the use of LED light.

[0146] like Fig.10 As shown, the LED light-emitting surface is bonded to a temporary substrate, and the periphery of the sapphire substrate is etched to form an inclined surface. A layer of Ag is deposited as the first reflective layer 500. Since the LED light-emitting area and the pad are both inwardly shrunk, the first reflective layer 500 will only be deposited on the sapphire surface and the inclined surface, and will not cause a short circuit.

[0147] For example, Fig.11 A schematic partial top view of a light source provided in an embodiment of the present application; Fig.12 A cross-sectional structure diagram of a light source along A2-A1 provided in an embodiment of the present application. Fig.11 and Fig.12 , the first welding part 710 may include a first electrode welding pad 711 and a second electrode welding pad 712. The first electrode welding pad 711 may be electrically connected to the first pad 300, and the second electrode welding pad 712 may be electrically connected to the second pad 400. Then, the first signal line 701 may provide a first driving signal for the first electrode 210, and the second signal line 702 may provide a second driving signal for the second electrode 230. Both the first signal line 701 and the second signal line 702 are electrically connected to the driver chip IC.

[0148] For example, in actual work, since the number of backlight LEDs is small, all light-emitting units can be wired to the IC, reducing the cost of manufacturing the cross-line film layer or glass substrate control circuit. Each LED is individually controlled by the IC through its own wiring.

[0149] It should be noted that Fig.11 The distribution of two LEDs is only shown schematically, and the light source may include multiple LEDs. Fig.11 The connection relationship shown is only for illustration and is not intended to be a specific limitation of the present application.

[0150] It should be noted that the attached Figure 6 , Figures 8 to 10 Can be Fig.11 Schematic diagram along the B1-B2 section.

[0151] According to a second aspect of the embodiments of the present application, a display device is provided. Fig.13 Schematic diagram of a display device provided in an embodiment of the present application. Fig.13 As shown, the display device may include: the light source 1000 as provided in the first aspect, and the display device may also include a display panel 2000, the display panel 2000 may be a liquid crystal display panel, the display panel 2000 is arranged opposite to the light source 1000, and the light source 1000 serves as a backlight source of the display panel 2000.

[0152] It should be noted that the display device provided in the embodiments of the present application may include a smart phone, a tablet computer, a laptop computer, a television, and a smart wearable display device, etc. The smart wearable display device may include a smart watch, etc., and the embodiments of the present application do not make specific limitations.

[0153] Exemplarily, the preparation method of the LED provided in the embodiment of the present application is briefly described as follows:

[0154] Fig.14The following is a schematic flow chart of a method for preparing an LED provided in an embodiment of the present application. Fig.14 As shown, the preparation method of LED includes:

[0155] S10 : a patterned first electrode 210 , a light emitting layer 220 , a second electrode 230 , a first insulating layer 240 , a first connection electrode 250 and a second connection electrode 260 are respectively disposed on one side of the substrate 100 .

[0156] S11 : etching the substrate 100 in the second region 102 to form a protrusion 110 , and disposing a second insulating layer 270 , and disposing a third through hole 271 and a fourth through hole 272 on the second insulating layer 270 .

[0157] S12: Arrange the first pad 300 and the second pad 400 .

[0158] For example, the step of etching the substrate 100 to form the protrusion 110 may be completed before step S10 or may be performed after step S10, which is not specifically limited in the embodiment of the present application.

[0159] For example, Fig.15 A schematic flow chart of another method for preparing an LED provided in an embodiment of the present application. Fig.15 As shown, the preparation method of LED includes:

[0160] S20: A protrusion 110 is provided on one side of the substrate 100, and a patterned first electrode 210, a light-emitting layer 220, a second electrode 230, a first insulating layer 240, a first connecting electrode 250, a second connecting electrode 260, a second insulating layer 270, a first soldering pad 300 and a second soldering pad 400 are respectively provided on one side of the substrate 100.

[0161] S21: Invert the product of step S20, and connect the fixing glue 606 to the side of the second insulating layer 270 away from the substrate 100. The side of the fixing glue 606 away from the substrate 100 is a temporary substrate 605. The fixing glue 606 can play a role of temporary support and fixation. The fixing glue 606 may include UV curing glue or thermosetting glue, etc.

[0162] For example, Fig.16 A schematic flow chart of another method for preparing a light source provided in an embodiment of the present application. Fig.16 As shown, the method for preparing the light source includes:

[0163] Before S30 : a third groove 670 is provided on the substrate 600 , and a quantum dot layer 640 , a scattering layer 650 and a quantum dot encapsulation layer 660 are provided in the third groove 670 .

[0164] S30 : a first groove 610 , a second groove 620 and a first welding portion 710 are arranged on a side of the substrate 600 away from the third groove 670 .

[0165] S31: embedding a side of the LED provided with the light emitting structure into the first groove 610 and the second groove 620 .

[0166] S32: Disposing an inorganic insulating layer 800 and a second reflective layer 900 .

[0167] For example, Fig.17 A schematic flow chart of another method for preparing a light source provided in an embodiment of the present application. Fig.17 As shown, the method for preparing the light source includes:

[0168] S40 : a first groove 610 and a second groove 620 are arranged on the substrate 600 , and a quantum dot layer 640 , a scattering layer 650 and a quantum dot encapsulation layer 660 are arranged in the first groove 610 .

[0169] S41 : embedding the light emitting structure of the LED provided with the first reflective layer 500 into the first groove 610 and the second groove 620 .

[0170] S42: Setting ink layer 604.

[0171] Figures 14 to 17 The preparation method flow shown is just a simple illustration and is not intended to be a specific limitation of the present application.

[0172] It should be noted that in the above embodiments, the description of each embodiment has its own emphasis, and for parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0173] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

[0174] Although the preferred embodiments of this specification have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of this specification.

[0175] Obviously, those skilled in the art can make various changes and modifications to this specification without departing from the spirit and scope of this specification. Thus, if these modifications and variations of this specification fall within the scope of the claims of this specification and their equivalents, this specification is also intended to include these modifications and variations.

Claims

1. A LED, It is characterized in that include: A substrate, the substrate comprising a first region and a second region, the second region surrounding the first region, the substrate comprising a protrusion, the protrusion being located in the first region, and a thickness of the substrate in the first region being greater than a thickness of the substrate in the second region; a light emitting structure, disposed on a side of the substrate having the protrusion, the light emitting structure being located in the first region of the substrate, the light emitting structure being connected to the protrusion, and comprising a first connection pad and a second connection pad; a first pad, one end of which is electrically connected to the first connection pad, and the other end of which is connected to the substrate of the second region; The second pad has one end electrically connected to the second connection pad and the other end connected to the substrate in the second region.

2. The LED according to claim 1, It is characterized in that The orthographic projection of the first pad on the substrate covers at least a portion of a boundary between the first region and the second region; The orthographic projection of the second pad on the substrate covers at least a portion of a boundary between the first region and the second region.

3. The LED according to claim 1, It is characterized in that The ratio of the thickness of the substrate in the second region to the thickness of the substrate in the first region is in a range of 1 / 4 to 3 / 4; and / or, The distance between the side of the light emitting structure away from the substrate and the side of the substrate close to the light emitting structure is a first distance, the thickness difference between the substrate in the first area and the substrate in the second area is a second distance, and the first distance is smaller than the second distance.

4. The LED according to claim 1, It is characterized in that The light emitting structure comprises a first electrode, a light emitting layer, a second electrode, a first insulating layer, a first connecting electrode and a second connecting electrode, the light emitting layer is arranged between the first electrode and the second electrode, and the first insulating layer comprises a first through hole and a second through hole; One end of the first connection electrode is electrically connected to the first electrode through the first through hole, and the other end of the first connection electrode is electrically connected to the first pad; One end of the second connection electrode is electrically connected to the second electrode through the second through hole, and the other end of the second connection electrode is electrically connected to the second pad.

5. The LED according to claim 4, It is characterized in that A side of the first electrode close to the substrate is connected to the protrusion; An orthographic projection area of ​​the second through hole on the substrate is greater than twice an orthographic projection area of ​​the first through hole on the substrate.

6. The LED according to claim 4, It is characterized in that The first electrode, the light-emitting layer and the second electrode are stacked in a thickness direction of the substrate, and the first electrode is arranged between the substrate and the light-emitting layer; The orthographic projections of the light-emitting layer and the second electrode on the substrate both fall within the orthographic projection of the first electrode on the substrate; The orthographic projection of the first through hole on the substrate falls within the orthographic projection of the first electrode on the substrate, and the orthographic projection of the second through hole on the substrate falls within the orthographic projection of the second electrode on the substrate.

7. The LED according to claim 6, It is characterized in that The first electrode comprises an overlapping region and an exposed region, the orthographic projections of the second electrode and the light-emitting layer on the first electrode fall within the overlapping region, and the first electrode in the exposed region is exposed relative to the second electrode and the light-emitting layer; The first electrode in the overlapping area is covered by the light-emitting layer, and the orthographic projection of the first through hole on the first electrode falls into the exposed area.

8. The LED according to claim 7, It is characterized in that Also includes: A second insulating layer is disposed on a side of the light emitting structure away from the substrate; The second insulating layer covers the first connecting electrode and the second connecting electrode; The second insulating layer comprises a third through hole and a fourth through hole, the third through hole is used to expose a portion of the first connection electrode, the first connection pad is the first connection electrode exposed by the third through hole, the fourth through hole is used to expose a portion of the second connection electrode, and the second connection pad is the second connection electrode exposed by the fourth through hole; The first pad is electrically connected to the first connection electrode through the third through hole, and the second pad is electrically connected to the second connection electrode through the fourth through hole.

9. The LED according to claim 8, It is characterized in that The first insulating layer wraps at least part of the edges and side walls in the thickness direction of the first electrode, the light-emitting layer and the second electrode; and / or, The first connecting electrode is disposed between the first insulating layer and the second insulating layer, and the second connecting electrode is disposed between the first insulating layer and the second insulating layer; and / or, An orthographic projection of the second insulating layer on the substrate covers the first region.

10. The LED according to claim 8, It is characterized in that The third through hole is closer to the edge of the substrate than the first through hole, and the fourth through hole is closer to the edge of the substrate than the second through hole; The first through hole corresponds to one end of the first connecting electrode, and the third through hole corresponds to the other end of the first connecting electrode; The second through hole corresponds to one end of the second connecting electrode, and the fourth through hole corresponds to the other end of the second connecting electrode; The orthographic projections of the third through hole and the fourth through hole on the substrate both fall within the first region; One end of the first connection electrode away from the first through hole is connected to the protruding portion, and / or one end of the second connection electrode away from the second through hole is connected to the protruding portion.

11. The LED according to claim 8, It is characterized in that The first pad covers at least a portion of the edge of the protruding portion; and / or, The second pad covers at least a portion of the edge of the protruding portion; and / or, The second insulating layer is disposed between the first pad and the protruding portion, and the second insulating layer is disposed between the second pad and the protruding portion; and / or, The second insulating layer is disposed between the first pad and the substrate in the second region, and the second insulating layer is disposed between the second pad and the substrate in the second region.

12. The LED according to claim 8, It is characterized in that The reflectivity of the second insulating layer is greater than 99%.

13. The LED according to claim 8, It is characterized in that The second insulating layer includes a distributed Bragg reflector.

14. The LED according to claim 12, It is characterized in that The orthographic projection of the second insulating layer on the substrate covers the substrate; The second insulating layer comprises an opening, and a second connecting electrode is arranged between the opening and the second through hole; The orthographic projection of the opening on the substrate covers the orthographic projection of the light-emitting layer on the substrate; and / or, The orthographic projection of the opening on the substrate covers the orthographic projection of the second through hole on the substrate; and / or, An orthographic projection of the opening on the substrate covers an orthographic projection of the second electrode on the substrate.

15. The LED according to any one of claims 1 to 14, It is characterized in that Also includes: The first reflective layer is arranged on a side of the substrate away from the light emitting structure.

16. A light source, It is characterized in that include: A substrate, comprising a plurality of first grooves and a plurality of second grooves, wherein the second grooves surround the first grooves, and the groove bottoms of the second grooves are connected to the groove openings of the first grooves; A plurality of LEDs according to any one of claims 1 to 15, wherein a side of the LED having the protrusion is arranged opposite to a side of the substrate having the first groove; The light emitting structure of the LED is at least partially embedded in the first groove, and the base of the LED is at least partially embedded in the second groove.

17. The light source according to claim 16, It is characterized in that The protrusion of the LED is at least partially embedded in the first groove; The substrate of the second region of the LED is at least partially embedded in the second groove.

18. The light source according to claim 16, It is characterized in that Part of the protrusion is embedded in the first groove, and part of the protrusion is embedded in the second groove.

19. The light source according to claim 16, It is characterized in that The inner diameter of the second groove is greater than the inner diameter of the first groove, and a step structure is formed at the junction of the inner walls of the first groove and the second groove; The first pad and the second pad are respectively connected to the step structures at different positions through welding structures.

20. The light source according to claim 16, It is characterized in that Also includes: quantum dot layer; Scattering layer; Quantum dot encapsulation layer; The quantum dot layer, the scattering layer and the quantum dot encapsulation layer are all arranged on a side of the light-emitting structure away from the substrate, and the quantum dot layer, the scattering layer and the quantum dot encapsulation layer are stacked in a thickness direction; The quantum dot layer and the scattering layer are both embedded in the substrate.

21. The light source according to claim 20, It is characterized in that The quantum dot layer, the scattering layer and the quantum dot encapsulation layer are all arranged in the first groove; The quantum dot layer is arranged between the scattering layer and the quantum dot encapsulation layer, and the quantum dot layer is arranged on a side of the quantum dot encapsulation layer away from the light emitting structure.

22. The light source according to claim 20, It is characterized in that The substrate further comprises a third groove, the third groove is arranged on a side of the substrate away from the first groove, and a notch of the third groove is away from the notch of the first groove; The quantum dot encapsulation layer is arranged on the side of the substrate away from the LED, the quantum dot layer and the scattering layer are both arranged in the third groove, the scattering layer is arranged between the quantum dot layer and the quantum dot encapsulation layer, and the orthographic projection of the third groove on the substrate falls within the orthographic projection of the quantum dot encapsulation layer on the substrate.

23. The light source according to claim 20, It is characterized in that Also includes: An organic insulating layer is disposed on a side of the substrate away from the light-emitting structure; A second reflective layer is disposed on a side of the organic insulating layer away from the substrate, wherein a connection interface between the second reflective layer and the organic insulating layer comprises a concave-convex curved surface, wherein the concave-convex curved surface comprises a plurality of alternately connected concave surfaces and convex surfaces; an ink layer, disposed on a side of the second reflective layer away from the substrate, wherein the reflectivity of the ink layer is greater than the absorbance, and / or the reflectivity of the ink layer is greater than the transmittance; The substrate comprises a first groove region and a barrier region, the barrier region surrounds the first groove region, and the first groove and the second groove are both arranged in the first groove region; Part of the organic insulating layer covers a side of the base away from the light emitting structure, and part of the organic insulating layer covers the substrate in the barrier area.

24. A display device, It is characterized in that include: A light source as claimed in any one of claims 16 to 23.

Images