Pyretic moxibustion physiotherapy control system and method

Abstract

The invention discloses a pyretic moxibustion physiotherapy control system and method. The pyretic moxibustion physiotherapy control system comprises a BOOST circuit, a high-voltage inverter circuit, a high-voltage shaping circuit, a moxibustion circuit and a control circuit, the output end of the BOOST circuit is connected with the input end of the high-voltage inverter circuit; the output end of the high-voltage inverter circuit is connected with the input end of the high-voltage shaping circuit, and the high-voltage inverter circuit is used for inverting high voltage into alternating current and inputting the alternating current into the high-voltage shaping circuit; the output end of the high-voltage shaping circuit is connected to the physiotherapy pole piece; the moxibustion circuit is connected with the output end of the BOOST circuit, the moxibustion circuit converts high voltage into electric energy suitable for operation of a moxibustion polar plate through multi-stage energy storage and energy adjustment, and energy supply in the moxibustion process is achieved; the control circuit is connected with the BOOST circuit, the high-voltage inverter circuit, the high-voltage shaping circuit and the moxibustion circuit. The device can achieve the advantage of cooperative treatment of moxibustion and electric physiotherapy, and has the advantages of being stable in control and convenient to adjust.

Description

Technical Field

[0001] The present invention relates to the field of medical electronics, and in particular to a thermal moxibustion therapy control system and method. Background Art

[0002] For chronic diseases such as rheumatism, rheumatoid arthritis, etc., Chinese medicine usually combines acupuncture and moxibustion for treatment. This is mainly because high-temperature moxibustion can increase the temperature of the tissue interface, which can not only enhance blood circulation, improve the nutrition of local tissues, and strengthen the body's metabolic rate, but also enhance the activity of enzymes in the body, reduce the tension of muscles and connective tissues, relieve muscle spasms, and reduce the excitability of sensory nerves to relieve pain. However, existing physiotherapy equipment may have overcurrent when working. For example, if the working current of the radio frequency generator is too large, it will cause the human body impedance to change (become larger) and the physiotherapy effect will decrease; the electrodes acting on the skin may have overpower output, causing the local tissue temperature of the patient's skin to overheat instantly and cause burns. At present, anti-scalding often relies on the professional level of the operator for manual adjustment, and lacks an effective automatic protection mechanism. In addition, short circuit of the output electrode or too low load impedance can easily cause equipment damage. In addition, some physiotherapy equipment has a relatively single function and can only perform simple acupuncture operations. It cannot achieve the synergy of multiple physiotherapy functions like Chinese medicine usually combines acupuncture and moxibustion for treatment, and cannot better meet the needs of comprehensive treatment of chronic diseases such as rheumatism and rheumatoid arthritis. Summary of the invention

[0003] The purpose of the present invention is to provide a hot moxibustion therapy control system and method. The present invention can achieve the advantages of synergistic treatment of moxibustion and electrical therapy, and has the characteristics of stable control and convenient adjustment.

[0004] The technical solution provided by the present invention is as follows: a hot moxibustion therapy control system, comprising a BOOST boost circuit, a high-voltage inverter circuit, a high-voltage shaping circuit and a control circuit; the output end of the BOOST boost circuit is connected to the input end of the high-voltage inverter circuit to provide a high voltage for the high-voltage inverter circuit; the output end of the high-voltage inverter circuit is connected to the input end of the high-voltage shaping circuit, and the high-voltage inverter circuit is used to invert the high voltage into alternating current and input it into the high-voltage shaping circuit; the output end of the high-voltage shaping circuit is connected to a therapy electrode, which is used to output electrical energy to the lesion site of the human body after shaping the alternating current for physical therapy; it also includes a moxibustion circuit, which is connected to the output end of the BOOST boost circuit, and the moxibustion circuit converts the high voltage into electrical energy suitable for the moxibustion electrode plate to work through multi-stage energy storage and energy regulation, thereby realizing energy supply for the moxibustion process; the control circuit is respectively connected to the BOOST boost circuit, the high-voltage inverter circuit, the high-voltage shaping circuit and the moxibustion circuit.

[0005] The above-mentioned moxibustion therapy control system, the BOOST boost circuit includes a battery VE , energy storage filter inductor L 1 , diode D 1 , NMOS transistor Q 1 and energy storage capacitor C 1 ; the positive output terminal of the battery V E is connected to one end of the energy storage filter inductor L 1 , the negative terminal of the battery V E is grounded; the other end of the energy storage filter inductor L 1 is connected to the anode of the diode D 1 and the drain of the NMOS transistor Q 1 , the source of the NMOS transistor Q 1 is grounded, and the gate of the NMOS transistor Q 1 is connected to the control circuit; the cathode of the diode D 1 is connected to one end of the energy storage capacitor C 1 and the high-voltage inverter circuit, and the other end of the energy storage capacitor C 1 is grounded.

[0006] The aforementioned thermal moxibustion physiotherapy control system, the moxibustion circuit includes an input module, a moxibustion energy storage input stage, a first moxibustion energy storage intermediate stage, a second moxibustion energy storage intermediate stage, an output stage, a relay KA 2 and a moxibustion electrode plate connected in sequence; the input module includes a diode D 2 , the anode of the diode D 2 is connected to the high-voltage output terminal of the BOOST boost circuit, and the cathode of the diode D 2 is connected to an inductor L 2 , and the other end of the inductor L 2 is connected to the moxibustion energy storage input stage;

[0007] The moxibustion energy storage input stage includes a capacitor two first resistors with a resistance value of R, a PMOS transistor Q P and an NMOS transistor Q N ; wherein, one end of the capacitor is connected to the output terminal of the inductor L 2 , and the other end is grounded; the two first resistors are connected in series between the capacitor and the ground; the source of the PMOS transistor Q P is connected to the output terminal of the inductor L 2 , the drain of the PMOS transistor Q P is connected to the first moxibustion energy storage intermediate stage, the gate of the PMOS transistor Q P is connected to the drain of the NMOS transistor Q N , the source of the NMOS transistor Q N is grounded, and the gate of the NMOS transistor Q N is connected between the two first resistors;

[0008] The first intermediate stage of moxibustion energy storage includes a capacitor Three second resistors with a resistance value of R, a third resistor with a resistance value of 9R, a PMOS transistor and an NMOS transistor Among them, the capacitor One end is connected to the drain of PMOS transistor Q P The other end is grounded; two second resistors are connected in series between the capacitor and the ground, and the other second resistor and the third resistor are connected in series and then connected in parallel across the capacitor Both ends; the gate of the NMOS transistor Q N is also connected between the second resistor and the third resistor; the source of the PMOS transistor is connected to the drain of PMOS transistor Q P The drain of the PMOS transistor is connected to the second intermediate stage of moxibustion energy storage, the gate of the PMOS transistor is connected to the drain of the NMOS transistor The source of the NMOS transistor is grounded, and the gate of the NMOS transistor is connected between the two second resistors;

[0009] The second intermediate stage of moxibustion energy storage includes a capacitor Three fourth resistors with a resistance value of R, a fifth resistor with a resistance value of 9R, a PMOS transistor and an NMOS transistor Among them, the capacitor One end is connected to the drain of the PMOS transistor The other end is grounded; two fourth resistors are connected in series between the capacitor and the ground, and the other fourth resistor and the fifth resistor are connected in series and then connected in parallel across the capacitor Both ends; the gate of the NMOS transistor is also connected between the fourth resistor and the fifth resistor; the source of the PMOS transistor is connected to the drain of the PMOS transistor The drain of the PMOS transistor is connected to the output stage, the gate of the PMOS transistor is connected to the drain of the NMOS transistor The source of the NMOS transistor is grounded, and the gate of the NMOS transistor is connected between the two fourth resistors;

[0010] The output stage includes a capacitor 1 sixth resistor with a resistance value of R and 1 seventh resistor with a resistance value of 9R; the capacitor One end is connected to the PMOS transistor The drain of which is grounded at the other end, and the sixth resistor and the seventh resistor are connected in series between the capacitor and the ground; the NMOS transistor The gate is also connected between the sixth resistor and the seventh resistor;

[0011] The relay KA 2 The two ends of the contacts are connected in series between the output stage and one end of the moxibustion electrode plate, and the other end of the moxibustion electrode plate is grounded; the relay KA 2 is also connected to the control circuit.

[0012] For the above-mentioned hot moxibustion physiotherapy control system, the control circuit includes resistors R sh , resistor R cf , resistor R 1 , resistor R 2 , capacitor C cf , capacitor C vf , a voltage stabilizing module and an MCU; the PWM1 pin of the MCU is connected to the gate of the NMOS transistor Q 1 , the VDD pin of the MCU is connected to the battery V through the voltage stabilizing module E is connected, and the GND pins of the voltage stabilizing module and the MCU are grounded; the resistor R 1 and resistor R 2 are connected in series and then respectively connected between the cathode of the diode D 1 and the ground; one end of the capacitor C cf is connected between the resistor R 1 and resistor R 2 , and the other end of the capacitor C cf is grounded; the AD1 pin of the MCU is connected between the resistor R 1 and resistor R 2 ; the resistor R sh is connected between the high-voltage inverter circuit and the ground; the AD2 pin of the MCU is connected to one end of the capacitor C cf and one end of the resistor R cf , and the other end of the resistor R cf is connected between the resistor R sh and the high-voltage inverter circuit; the other end of the capacitor C cf is grounded.

[0013] The method of the above-mentioned heat moxibustion physiotherapy control system, wherein the control module controls the high voltage output by the BOOST boost circuit to be stabilized at a set voltage value by regulating the duty cycle, and the high voltage is respectively input into the high-voltage inverter circuit and the moxibustion circuit; wherein, the high-voltage inverter circuit inversely converts the high voltage into alternating current and inputs it into the high-voltage shaping circuit, and the high-voltage shaping circuit shapes the alternating current and outputs electric energy to the human body lesion site for physiotherapy; the moxibustion circuit converts the high voltage into electric energy suitable for the operation of the moxibustion electrode plate through multi-stage energy storage and energy regulation, so as to realize the energy supply during the moxibustion process.

[0014] The method of the above-mentioned heat moxibustion physiotherapy control system, wherein the moxibustion circuit includes an input module, a moxibustion energy storage input stage, a first moxibustion energy storage intermediate stage, a second moxibustion energy storage intermediate stage, an output stage, a relay KA 2 and a moxibustion electrode plate; the input module is composed of a diode D 2 and an inductor L 2 ; the diode D 2 ensures the unidirectional flow of electric energy and is used for the capacitor to quickly output electric energy during moxibustion, and the inductor L 2 suppresses the charging current spike to ensure the stability of the high voltage and the safety of components; the moxibustion energy storage input stage, the first moxibustion energy storage intermediate stage, the second moxibustion energy storage intermediate stage and the output stage all include energy storage capacitors and resistors with different resistance values, and the circuit structures and component parameters of the first moxibustion energy storage intermediate stage and the second moxibustion energy storage intermediate stage are the same; the relay KA 2 controls the electric energy stored in the moxibustion circuit to be released to the moxibustion electrode plate, and the moxibustion electrode plate contains carbon fiber heating wires and wormwood components.

[0015] The method of the above-mentioned heat moxibustion physiotherapy control system, wherein the moxibustion energy storage input stage includes a capacitor two first resistors with a resistance value of R, a PMOS transistor Q P and an NMOS transistor Q N ; when the power supply is turned on, the capacitor charges, and the voltage rise causes the PMOS transistor Q P and the NMOS transistor Q N to conduct in sequence to release electric energy. After stabilization, the resistance voltage division of this stage makes the NMOS transistor Q N not conduct, and the resistance voltage division of the first moxibustion energy storage intermediate stage makes the corresponding NMOS transistor continuously conduct to realize self-locking power transmission.

[0016] The method of the above-mentioned heat moxibustion physiotherapy control system, wherein the first moxibustion energy storage intermediate stage contains a capacitor three second resistors with a resistance value of R, a third resistor with a resistance value of 9R, a PMOS transistor and an NMOS transistor wherein the voltage of the moxibustion energy storage input stage makes the PMOS transistor of the first moxibustion energy storage intermediate stage and NMOS transistors Conduct to receive electrical energy. After stabilization, the resistor voltage division of this stage makes the NMOS transistor Non-conductive. The resistor voltage division of the second moxibustion energy storage intermediate stage makes the corresponding NMOS transistor continuously conduct to achieve self-locking power transmission.

[0017] For the method of the above-mentioned heat moxibustion physiotherapy control system, the second moxibustion energy storage intermediate stage contains a capacitor Three fourth resistors with a resistance value of R, one fifth resistor with a resistance value of 9R, PMOS transistor and NMOS transistors Among them, the voltage of the first moxibustion energy storage intermediate stage makes the PMOS transistor of the second moxibustion energy storage intermediate stage and NMOS transistors Conduct to receive electrical energy. After stabilization, the resistor voltage division of this stage makes the NMOS transistor Non-conductive. The resistor voltage division of the output stage makes the corresponding NMOS transistor continuously conduct to achieve self-locking power transmission.

[0018] For the method of the above-mentioned heat moxibustion physiotherapy control system, the output stage includes a capacitor 1 sixth resistor with a resistance value of R and 1 seventh resistor with a resistance value of 9R; after the energy storage and regulation of the moxibustion energy storage input stage, the first moxibustion energy storage intermediate stage, and the second moxibustion energy storage intermediate stage, the output stage provides stable electrical energy for the moxibustion electrode plate;

[0019] The normally open contact of the relay KA 2 Closes to control the release of the electrical energy stored in the capacitor in the moxibustion circuit to the moxibustion electrode plate.

[0020] Compared with the prior art, the present invention integrates the functions of moxibustion and electrotherapy, realizes the collaborative work of the two treatment methods, and for chronic diseases such as muscle strain, rheumatism, rheumatoid arthritis, and intervertebral disc, can simultaneously exert the therapeutic effects of electrotherapy and moxibustion, significantly improving the treatment effect. The circuit design of the present invention is reasonable, and each part of the circuit cooperates closely. While realizing various functions, the hardware structure is simplified, the equipment cost is reduced, and the reliability and stability of the equipment are improved. The present invention precisely controls each part of the circuit through the MCU in the control circuit, can flexibly adjust the output voltage, electrical energy, and waveform according to different treatment requirements, meet diversified treatment schemes, and improve the pertinence and effectiveness of treatment. The moxibustion circuit of the present invention adopts a multi-stage energy storage and energy regulation design, which can effectively improve the moxibustion effect. And doctors can increase the number of moxibustion electrode plates and the number of moxibustion energy storage intermediate stages according to the condition of the disease to further optimize the treatment scheme and provide personalized treatment services for patients. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is the circuit schematic diagram of the present invention;

[0022] Figure 2 Schematic diagram of the BOOST boost circuit and the control circuit of the present invention;

[0023] Figure 3 Schematic diagram of the high-voltage inverter circuit;

[0024] Figure 4 Schematic diagram of the high-voltage shaping circuit

[0025] Figure 5 Schematic diagram of the moxibustion circuit. Specific embodiments

[0026] The present invention will be further described below in conjunction with embodiments and drawings, but it shall not be used as a basis for limiting the present invention.

[0027] Embodiment: A heat moxibustion physiotherapy control system, as Figure 1 shown, comprising a BOOST boost circuit, a high-voltage inverter circuit, a high-voltage shaping circuit, a moxibustion circuit and a control circuit; the output end of the BOOST boost circuit is connected to the input end of the high-voltage inverter circuit to provide a high voltage for the high-voltage inverter circuit; the output end of the high-voltage inverter circuit is connected to the input end of the high-voltage shaping circuit, and the high-voltage inverter circuit is used to invert the high voltage into alternating current and input it to the high-voltage shaping circuit; the output end of the high-voltage shaping circuit is connected to the physiotherapy electrode plate, and is used to shape the alternating current and output electric energy to the human body lesion site for physiotherapy; the moxibustion circuit is connected to the output end of the BOOST boost circuit, and the moxibustion circuit converts the high voltage into electric energy suitable for the operation of the moxibustion electrode plate through multi-stage energy storage and energy regulation to realize the energy supply for the moxibustion process; the control circuit is respectively connected to the BOOST boost circuit, the high-voltage inverter circuit, the high-voltage shaping circuit and the moxibustion circuit.

[0028] As Figure 2 shown, the BOOST boost circuit includes a battery V E , an energy storage filter inductor L 1 , a diode D 1 , an NMOS transistor Q 1 and an energy storage capacitor C 1 ; the positive output end of the battery V E is connected to one end of the energy storage filter inductor L 1 , and the negative pole of the battery V E is grounded; the other end of the energy storage filter inductor L 1 is connected to the anode of the diode D 1 and the drain of the NMOS transistor Q 1 , the source of the NMOS transistor Q 1 is grounded, and the gate of the NMOS transistor Q 1 is connected to the control circuit; the anode of the diode D 1The cathode is connected to one end of the energy storage capacitor C 1 and the high-voltage inverter circuit. The other end of the energy storage capacitor C 1 is grounded. The BOOST boost circuit boosts the battery V E to obtain a high voltage HV+. By regulating the duty cycle of the driving signal PWM1 of the NMOS transistor Q 1 , the value of HV+ can be regulated. During operation, when PWM1 is at a high level, the NMOS transistor Q1 conducts, and the battery V E charges the energy storage filter inductor L 1 , and the inductor L 1 stores energy; when PWM1 is at a low level, the NMOS transistor Q1 is cut off, and the inductor L 1 releases energy, which is superimposed on the voltage of the battery VE, and charges the energy storage capacitor C 1 through the diode D 1 , so that the voltage across the energy storage capacitor C 1 rises to obtain the required high voltage HV+.

[0029] The high-voltage inverter circuit and the high-voltage shaping circuit in this embodiment are both conventional circuit structures, which are well-known and mastered technical means in the art.

[0030] Among them, the high-voltage inverter circuit is a circuit that converts direct current into alternating current, and is usually used to convert a low-voltage DC power supply into a high-voltage AC power supply to meet specific application requirements. The common principles are as follows:

[0031] Basic transformation principle

[0032] DC-AC conversion: The most basic high-voltage inverter circuit is usually composed of power switching devices (such as IGBTs, MOSFETs, etc.). By controlling the on and off of these switching devices, the electrical energy of the DC power supply is converted into AC electrical energy. For example, in a simple single-phase half-bridge inverter circuit, two power switching tubes S1 and S2 alternately conduct and turn off. When S1 conducts and S2 turns off, the positive pole of the power supply outputs a positive half-cycle current to the load through S1; when S1 turns off and S2 conducts, the negative pole of the power supply outputs a negative half-cycle current to the load through S2, so that an AC voltage and current are obtained on the load.

[0033] Frequency control: By changing the switching frequency of the power switching device, the frequency of the output alternating current can be controlled. For example, in some applications, it is necessary to convert a DC power supply into a 50Hz or 60Hz power frequency alternating current, which can be achieved by accurately controlling the on and off time of the switching device.

[0034] Boost principle

[0035] Using inductive energy storage: In an inverter circuit, the energy storage characteristic of an inductor is often utilized to achieve voltage boost. When the power switch is turned on, the inductor stores energy; when the switch is turned off, the energy in the inductor is released and superimposed on the power supply voltage to generate an output voltage higher than the power supply voltage across the load. For example, in a Boost-type inverter circuit, a lower DC voltage is boosted in this way and then converted into an AC voltage.

[0036] Adopting a transformer: Voltage boost is achieved by adding a high-frequency transformer to the inverter circuit. After the inverter circuit converts DC to AC, the low-voltage AC signal is transformed into a high-voltage AC signal using the turns ratio relationship of the transformer. For example, in some high-voltage inverter power supplies, the DC power supply is first inverted into high-frequency alternating current in the tens of kilohertz range, and then the voltage is increased to the required high voltage value through a high-frequency transformer.

[0037] The high-voltage shaping circuit is mainly used to process the obtained high-voltage alternating current or other irregular high-voltage signals to make them high-voltage signals with waveforms and parameters meeting specific requirements. The common principles are as follows:

[0038] Filtering principle

[0039] Capacitor filtering: Utilize the charging and discharging characteristics of a capacitor to filter the high-frequency components in the high-voltage AC signal. After the high-voltage rectifier circuit, one or more large-capacity filtering capacitors are usually connected. When the rectified voltage is higher than the capacitor voltage, the capacitor charges; when the rectified voltage is lower than the capacitor voltage, the capacitor discharges, thereby making the output voltage smoother and reducing the voltage ripple.

[0040] Inductor filtering: An inductor has an obstructive effect on alternating current, and its inductive reactance is proportional to the frequency. In a high-voltage circuit, connecting an inductor in series in the circuit can prevent high-frequency current from passing through and allow low-frequency or DC components to pass through smoothly, thereby achieving the purpose of filtering. When combined with capacitor filtering, an LC filtering circuit can be formed, which can more effectively filter out interference signals of various frequencies and make the high-voltage signal more stable.

[0041] Voltage regulation principle

[0042] Feedback control: By sampling the voltage value of the output high-voltage signal and comparing it with a reference voltage, the parameters of the inverter circuit or other relevant circuits are adjusted according to the comparison result, so as to keep the output voltage stable. For example, in some high-voltage shaping circuits of switch-mode power supplies, pulse width modulation (PWM) technology is adopted, and the output voltage is adjusted by changing the conduction time of the power switch. When the output voltage increases, the conduction time of the switch is reduced; when the output voltage decreases, the conduction time of the switch is increased to maintain the stability of the output voltage.

[0043] Zener diode: Utilize the reverse breakdown characteristic of the Zener diode to stabilize the voltage. In the high-voltage shaping circuit, the Zener diode is reversely connected in parallel at the output end. When the output voltage exceeds the regulated voltage value of the Zener diode, the Zener diode breaks down reversely, and absorbs the excess voltage through the change of its own current, so that the output voltage is stabilized near the regulated voltage value of the Zener diode.

[0044] Waveform shaping principle

[0045] Clipping circuit: Used to limit the amplitude of the high-voltage signal so that it does not exceed a certain range. Usually composed of a diode and a resistor. When the amplitude of the input signal exceeds the clipping level (determined by the conduction voltage of the diode and the circuit parameters), the diode conducts, limiting the amplitude of the signal within a certain range, thereby obtaining a waveform with a stable amplitude.

[0046] Shaping circuit: Use circuits such as Schmitt triggers to shape the waveform of the high-voltage signal. The Schmitt trigger has a hysteresis characteristic. When the input signal rises to a certain threshold, the output is at a high level; when the input signal drops to another lower threshold, the output is at a low level, so that the irregular signal can be shaped into a regular rectangular wave signal.

[0047] In addition, the high-voltage inverter circuit can adopt the circuit structure as Figure 3 shown, in this circuit structure, it includes resistors R 3 ~R 14 , high-voltage optocouplers OP 1 ~OP 4 , IGBT transistors Q 5 ~Q 8 and a step-up transformer T 1 with a turn ratio of 1:N 1 . Among them, R 3 , R 4 , R 5 and OP 1 constitute the drive circuit of Q 5 , R 6 , R 7 , R 8 and OP 2 constitute the drive circuit of Q 6 , R 9 , R 10 , R 11 and OP 3 constitute the drive circuit of Q 7 , R 12 , R 13 , R 14 and OP 4 constitute the drive circuit of Q 8 , and the drive of the MCU controls Q 5 ~Q 8The on / off of Q 5 ~Q 8 constitute a high-voltage H-bridge inverter circuit to invert the high voltage HV+ of the boost circuit module, and T 1 realize further boosting and isolation for energy transfer, and invert HV+ into alternating current with a higher voltage.

[0048] The high-voltage shaping circuit can adopt the circuit structure as Figure 4 shown, and is composed of resistor R 14 , capacitor C 13 and relay KA 1 ; R 14 and C 13 form a first-order RC series circuit connected to both ends of the secondary winding of T 1 , and the normally open contact of KA 1 is connected in series between the physiotherapy electrode 1 and one end of C 13 , and the other end of C 13 is connected to the physiotherapy instrument electrode 2, and the voltage v out releases electric energy to the human lesion site to achieve physiotherapy. The circuit composed of R 14 and C 13 shapes the PWM signal at both ends of the secondary winding of T 1 , and outputs an approximate triangular wave or sine wave, which is mainly determined by the drive signal of the MCU high-voltage inverter circuit module. When the electro-physiotherapy works, the relay KA 1 connects the physiotherapy instrument electrode 1 to C 13 , and realizes that v out outputs electric energy at the lesion site for physiotherapy.

[0049] The above briefly describes the principle parts of the common high-voltage inverter circuit and high-voltage shaping circuit. In this embodiment, the corresponding high-voltage inverter circuit and high-voltage shaping circuit can be selected according to actual needs.

[0050] As Figure 5 shown, the moxibustion circuit is composed of diode D 2 , current-inhibiting inductor L 2 , moxibustion energy storage input stage, moxibustion energy storage intermediate stage 1, moxibustion energy storage intermediate stage 2, output stage, relay KA 2 and moxibustion electrode sheets containing heating elements and mugwort extract components. The input module is sequentially connected to the moxibustion energy storage input stage, the first moxibustion energy storage intermediate stage, the second moxibustion energy storage intermediate stage, the output stage, the relay KA 2 and the moxibustion electrode sheet;

[0051] The input module includes diode D 2 , the anode of diode D 2 is connected to the high-voltage output end of the BOOST boost circuit, and the diode D 2The cathode is connected with an inductor L 2 , and the other end of the inductor L 2 is connected to the moxibustion energy storage input stage; the diode D 2 ensures that the electric energy of the capacitor in the moxibustion circuit flows unidirectionally, and can quickly output electric energy during moxibustion to rapidly increase the temperature of the heating element; the inductor L 2 suppresses the excessive current spike during the charging of the energy storage capacitor in the moxibustion circuit, ensuring the safety of electronic components and the stability of the HV+ voltage.

[0052] The moxibustion energy storage input stage includes a capacitor two first resistors with a resistance value of R, a PMOS transistor Q P and an NMOS transistor Q N ; wherein, one end of the capacitor is connected to the output end of the inductor L 2 , and the other end is grounded; the two first resistors are connected in series between the capacitor and the ground; the source electrode of the PMOS transistor Q P is connected to the output end of the inductor L 2 , the drain electrode of the PMOS transistor Q P is connected to the first moxibustion energy storage intermediate stage, the gate electrode of the PMOS transistor Q P is connected to the drain electrode of the NMOS transistor Q N , the source electrode of the NMOS transistor Q N is grounded, and the gate electrode of the NMOS transistor Q N is connected between the two first resistors; when the circuit is powered on, HV+ charges the capacitor 2 of the moxibustion energy storage input stage through the diode D and the inductor L2. As the charging progresses, the voltage across the capacitor rises. When the voltage reaches a certain value, the NMOS transistor Q N conducts, and then the PMOS transistor Q P conducts, and the stored electric energy is quickly released to the next stage and reaches stability. At this time, the voltage division value of the first resistor with a resistance value of R in the moxibustion energy storage input stage is less than a specific threshold and cannot drive the NMOS transistor Q N to conduct again, but the voltage division voltage of the resistor with a resistance value of 9R in the first moxibustion energy storage intermediate stage is greater than this threshold, ensuring that the corresponding NMOS transistor remains conductive, realizing the self-locking function of conduction, and ensuring the stable transmission of electric energy.

[0053] The first moxibustion energy storage intermediate stage (i.e., Figure 2 the moxibustion energy storage intermediate stage 1 therein) includes a capacitor three second resistors with a resistance value of R, a third resistor with a resistance value of 9R, a PMOS transistor and an NMOS transistor ; wherein, one end of the capacitor is connected to the PMOS transistor QP The drain of which is connected to one end, and the other end is grounded; two second resistors are connected in series between the capacitor and the ground, and another second resistor and a third resistor are connected in series and then connected in parallel across the capacitor both ends; the gate of the NMOS transistor Q N is also connected between the second resistor and the third resistor; the source of the PMOS transistor is connected to the drain of the PMOS transistor Q P ; the drain of the PMOS transistor is connected to the second moxibustion energy storage intermediate stage, and the gate of the PMOS transistor is connected to the drain of the NMOS transistor ; the source of the NMOS transistor is grounded, and the gate of the NMOS transistor is connected between the two second resistors. When the capacitance voltage of the moxibustion energy storage input stage rises to a certain level, the relevant NMOS transistor in the first moxibustion energy storage intermediate stage is turned on, and then the PMOS transistor is turned on, and the electric energy is transferred to the second moxibustion energy storage intermediate stage and reaches stability. The self-locking function is also realized by using resistor voltage division to ensure the continuous and stable transmission of electric energy.

[0054] The second moxibustion energy storage intermediate stage (i.e., Figure 2 the moxibustion energy storage intermediate stage 2 in ) includes a capacitor three fourth resistors with a resistance value of R, a fifth resistor with a resistance value of 9R, a PMOS transistor and an NMOS transistor wherein one end of the capacitor is connected to the drain of the PMOS transistor , and the other end is grounded; two fourth resistors are connected in series between the capacitor and the ground, and another fourth resistor and the fifth resistor are connected in series and then connected in parallel across the capacitor both ends; the gate of the NMOS transistor is also connected between the fourth resistor and the fifth resistor; the source of the PMOS transistor is connected to the drain of the PMOS transistor , the drain of the PMOS transistor is connected to the output stage, the gate of the PMOS transistor is connected to the drain of the NMOS transistor , the source of the NMOS transistor is grounded, and the gate of the NMOS transistor

[0055] The output stage includes a capacitor A sixth resistor with a resistance value of R and a seventh resistor with a resistance value of 9R; the capacitor One end is connected to the drain of the PMOS transistor , and the other end is grounded. The sixth resistor and the seventh resistor are connected in series between the capacitor and the ground; the gate of the NMOS transistor is also connected between the sixth resistor and the seventh resistor; after multiple levels of energy storage and regulation, the output stage provides stable electrical energy for the moxibustion electrode sheet.

[0056] The relay KA 2 The two ends of the contact are connected in series between the output stage and one end of the moxibustion electrode sheet, and the other end of the moxibustion electrode sheet is grounded; the relay KA 2 is also connected to the control circuit. The relay KA 2 controls the release of the electrical energy stored in the moxibustion circuit to the moxibustion electrode sheet, and it is controlled by the MCU drive signal CTL 2 . The moxibustion electrode sheet contains a carbon fiber heating wire and an extracted wormwood component. The electrical energy stored in the capacitor is quickly released to the carbon fiber heating wire and quickly heats up, infiltrating the extracted wormwood component into the diseased tissue to improve the treatment effect.

[0057] The working principle of the moxibustion circuit is as follows: (1) When the power is turned on, the MCU executes the voltage control algorithm to control the duty cycle of the Q 1 drive signal PWM 1 , and stabilizes HV+ at the set voltage value. HV+ charges the capacitor 2 of the moxibustion energy storage input stage through D 2 and L . Two resistors with a resistance value of R are connected in parallel across , and their divided voltage is connected to one gate of Q N to drive the on / off of Q N . As the charging progresses, when the voltage across rises to twice the conduction threshold voltage V N of Q gs(th) , which is 2V gs(th) , Q N conducts, and then Q P conducts, The stored electrical energy is quickly released to and reaches stability. According to electrical engineering knowledge, The voltage at stability is At this time, the divided voltage value of the resistor with a resistance value of R in the moxibustion energy storage input stage is less than V gs(th) , and it cannot drive Q N to conduct, but the divided voltage of the resistor with a resistance value of 9R in the middle stage 1 of the moxibustion energy storage is greater than V gs(th) , ensuring that Q N continues to conduct, realizing Q NConduction self-locking function. Subsequently, HV+ passes through D 2 and L 2 to continuously charge the capacitors of the moxibustion energy storage input stage and the capacitors of the intermediate stage 1 of moxibustion energy storage , and the voltage of and continues to rise; (2) When the voltage of rises to 2V gs(th) , the voltage division of the two resistors with a resistance of R in parallel at both ends of reaches V gs(th) , driving the conduction of in the intermediate stage 1 of moxibustion energy storage, and then conducts, and the electric energy stored in and is quickly released to in the intermediate stage 2 of moxibustion energy storage and reaches stability. According to electrical engineering knowledge, at this time, the voltage of and when reaching stability is less than 2V gs(th) . The voltage division value of the resistor with a resistance of R in the intermediate stage 1 of moxibustion energy storage is less than V gs(th) , and it cannot drive to conduct, but the voltage division voltage of the resistor with a resistance of 9R in the intermediate stage 2 of moxibustion energy storage is greater than V gs(th) , ensuring that continuously conducts, realizing the self-locking function of conduction. Subsequently, HV+ passes through D 2 and L 2 to continuously charge the capacitors of the moxibustion energy storage input stage , the capacitors of the intermediate stage 1 of moxibustion energy storage and the capacitors of the intermediate stage 2 of moxibustion energy storage , and the voltage of and continues to rise; (3) When the voltage of rises to 2V gs(th) , the voltage division of the two resistors with a resistance of R in parallel at both ends of reaches V gs(th) , driving the conduction of in the intermediate stage 2 of moxibustion energy storage, and then conducts, and the electric energy stored in and is quickly released to in the output stage and reaches stability. According to electrical engineering knowledge, at this time, the voltage of and when reaching stability is less than 2V gs(th) . The voltage division value of the resistor with a resistance of R in the intermediate stage 2 of moxibustion energy storage is less than V gs(th), cannot drive conducts, but the voltage division voltage of the 9R resistor in the output stage is greater than V gs(th) , ensure continuously conducts to achieve the self-locking function of conduction. Subsequently, HV+ passes through D 2 , L 2 to charge the capacitor of the input stage of moxibustion energy storage the capacitor of the intermediate stage 1 of moxibustion energy storage the capacitor of the intermediate stage 2 of moxibustion energy storage and the output stage capacitor continuously, and the voltage of... continuously increases; (4) When the moxibustion electrode plate is not working, HV+ passes through D 2 , L 2 continuously charges and until the voltage reaches HV+. When the moxibustion electrode plate works, the drive signal CTL of the MCU 2 is at a low level, and the normally open contact of the relay KA 2 closes, and the stored electrical energy is quickly released to the carbon fiber heating wire in the moxibustion electrode plate and quickly heats up, infiltrating the extracted components of mugwort into the diseased tissue.

[0058] It should be noted that doctors can reasonably increase the number of moxibustion electrode plates and the number of intermediate stages of moxibustion energy storage according to the needs of disease treatment to improve the moxibustion treatment effect, and the number can be set artificially according to the actual situation.

[0059] Such as Figure 2 shown, the control circuit includes resistor R sh , resistor R cf , resistor R 1 , resistor R 2 , capacitor C cf , capacitor C vf , a voltage stabilizing module and an MCU; the PWM1 pin of the MCU is connected to the gate of the NMOS transistor Q 1 , the VDD pin of the MCU is connected to the battery V E through the voltage stabilizing module, and the GND pins of the voltage stabilizing module and the MCU are grounded; the resistor R 1 and the resistor R 2 are connected in series and then connected between the cathode of the diode D 1 and the ground respectively; one end of the capacitor C cf is connected between the resistor R 1 and the resistor R 2 , and the other end of the capacitor C cf is grounded; the AD1 pin of the MCU is connected to the resistor R1 and resistor R 2 therebetween; said resistor R sh is connected between the high-voltage inverter circuit and the ground; the AD2 pin of the MCU is connected to one end of capacitor C cf and one end of resistor R cf ; the other end of resistor R cf is connected between resistor R sh and the high-voltage inverter circuit; the other end of said capacitor C cf is grounded. Wherein, R sh converts the high-voltage HV+ bus current i into a voltage signal, and R cf and C cf constitute a first-order low-pass filter to filter the voltage of R sh to obtain the voltage signal v 2 . R 1 and R 2 divide the high voltage HV+ to obtain the voltage signal v 1 , and C vf filters the interference of v 1 . The voltage stabilization module stabilizes the input battery voltage V E to 3.3V to supply power to the MCU. The MCU controls the entire circuit, mainly including the control of the output voltage v out of the physiotherapy device, the control of the output electric energy of the physiotherapy device, the waveform control of the output voltage v out of the physiotherapy device, and the control of the moxibustion circuit. On the one hand, based on sampling v 1 , the MCU executes a voltage control algorithm to achieve HV+ voltage control, and further stabilizes the voltage at the output end of T 1 and the output voltage v out of the physiotherapy device; on the other hand, the MCU obtains HV+ and current i by sampling v 1 , v 2 , and then obtains the current output power of the physiotherapy device, and controls the output electric energy of the physiotherapy device by controlling the output power; furthermore, the MCU controls the waveform of the driving signal of the high-voltage inverter circuit module according to the waveform requirements of the output voltage v out (for example, v out is an AC symmetric triangular wave, a unipolar triangular wave, a sine wave), to achieve the control of the waveform of v out ; finally, the MCU controls CTL 1 and CTL 2 to drive the normally open contacts of KA 1 and KA 2 to close, to achieve moxibustion and electrotherapy;

[0060] In summary, through the coordinated operation of each part of the circuit, the hot moxibustion physiotherapy control system of the present invention realizes the integration of moxibustion and electrotherapy, and can effectively treat chronic diseases such as muscle strain, rheumatism, rheumatoid arthritis and intervertebral discs. Its hardware structure is simple. Through the precise control of the MCU, the modulation of various output voltage waveforms can be realized to meet the treatment needs of different conditions. At the same time, the multi-stage energy storage and energy regulation design of the moxibustion circuit, as well as the flexibility to adjust the number of moxibustion electrodes and the energy storage intermediate stage according to the condition, further improve the treatment effect. This circuit has broad application prospects in the field of medical electronics and is expected to provide more convenient and efficient treatment means for chronic disease patients.

Claims

1. A hot moxibustion therapy control system, comprising a BOOST boost circuit, a high-voltage inverter circuit, a high-voltage shaping circuit and a control circuit; the output end of the BOOST boost circuit is connected to the input end of the high-voltage inverter circuit to provide a high voltage for the high-voltage inverter circuit; the output end of the high-voltage inverter circuit is connected to the input end of the high-voltage shaping circuit, and the high-voltage inverter circuit is used to invert the high voltage into alternating current and input it into the high-voltage shaping circuit; the output end of the high-voltage shaping circuit is connected to a therapy electrode, which is used to output electrical energy to the lesion site of the human body after shaping the alternating current for physical therapy; it is characterized in that: It also includes a moxibustion circuit, which is connected to the output end of the BOOST boost circuit. The moxibustion circuit converts high voltage into electric energy suitable for the operation of the moxibustion electrode plate through multi-stage energy storage and energy regulation, thereby realizing energy supply for the moxibustion process; the control circuit is respectively connected to the BOOST boost circuit, the high-voltage inverter circuit, the high-voltage shaping circuit and the moxibustion circuit.

2. The hot moxibustion therapy control system according to claim 1, characterized in that: The BOOST boost circuit includes a battery V E , energy storage filter inductor L1, diode D1, NMOS tube Q1 and energy storage capacitor C1; the battery V E The positive output terminal is connected to one end of the energy storage filter inductor L1, and the battery V E The negative electrode is grounded; the other end of the energy storage filter inductor L1 is connected to the anode of the diode D1 and the drain of the NMOS tube Q1, the source of the NMOS tube Q1 is grounded, and the gate of the NMOS tube Q1 is connected to the control circuit; the cathode of the diode D1 is connected to one end of the energy storage capacitor C1 and the high-voltage inverter circuit, and the other end of the energy storage capacitor C1 is grounded.

3. The hot moxibustion therapy control system according to claim 1, characterized in that: The moxibustion circuit includes an input module, a moxibustion energy storage input stage, a first moxibustion energy storage intermediate stage, a second moxibustion energy storage intermediate stage, an output stage, a relay KA2 and a moxibustion electrode connected in sequence; the input module includes a diode D2, an anode of the diode D2 is connected to the high-voltage output end of the BOOST boost circuit, a cathode of the diode D2 is connected to an inductor L2, and the other end of the inductor L2 is connected to the moxibustion energy storage input stage; The moxibustion energy storage input stage includes a capacitor The first resistor with two resistance values ​​of R and the PMOS tube Q P And NMOS tube Q N ; wherein the capacitor One end is connected to the output end of the inductor L2, and the other end is grounded; the two first resistors are connected in series with the capacitor and ground; the PMOS tube Q P The source of is connected to the output end of inductor L2, and the PMOS tube Q P The drain of the first moxibustion energy storage intermediate stage is connected to the PMOS tube Q P The gate of the NMOS tube Q N The drain of NMOS tube Q N The source of NMOS tube Q is grounded. N The gate is connected between the two first resistors; The first moxibustion energy storage intermediate stage includes a capacitor Three second resistors with resistance R, a third resistor with resistance 9R, and a PMOS tube and NMOS tube Among them, the capacitor One end is connected to PMOS tube Q P The drain of the capacitor is connected in series with the other end of the capacitor. Between the capacitor and the ground, another second resistor and a third resistor are connected in series and then in parallel with the capacitor. Both ends; the NMOS tube Q N The gate of the PMOS tube is also connected between the second resistor and the third resistor; The source of the PMOS tube Q P The drain of the PMOS tube The drain of the second moxibustion energy storage intermediate stage is connected to the PMOS tube The gate of the NMOS tube is connected The drain of NMOS tube The source of the NMOS tube is grounded. The gate is connected between the two second resistors; The second moxibustion energy storage intermediate stage includes a capacitor Three fourth resistors with a resistance value of R, a fifth resistor with a resistance value of 9R, and a PMOS tube and NMOS tube Among them, the capacitor One end is connected to the PMOS tube The drain of the capacitor is connected in series with two fourth resistors. Between the capacitor and the ground, another fourth resistor and a fifth resistor are connected in series and then in parallel with the capacitor. Both ends; the NMOS tube The gate of the PMOS tube is also connected between the fourth resistor and the fifth resistor; The source of the PMOS tube is connected The drain of the PMOS tube The drain of the output stage is connected to the PMOS tube The gate of the NMOS tube is connected The drain of NMOS tube The source of the NMOS tube is grounded. The gate is connected between two fourth resistors; The output stage includes capacitors A sixth resistor with a resistance value of R and a seventh resistor with a resistance value of 9R; the capacitor One end is connected to the PMOS tube The drain of the capacitor is connected in series with the sixth resistor and the seventh resistor. and ground; the NMOS tube The gate is also connected between the sixth resistor and the seventh resistor; The two ends of the contact of the relay KA2 are connected in series between the output stage and one end of the moxibustion electrode, and the other end of the moxibustion electrode is grounded; the relay KA2 is also connected to the control circuit.

4. The hot moxibustion therapy control system according to claim 3, characterized in that: The control circuit includes a resistor R sh , resistor R cf , resistor R1, resistor R2, capacitor C cf , capacitor C vf , voltage regulator module and MCU; the PWM1 pin of the MCU is connected to the gate of the NMOS tube Q1, and the VDD pin of the MCU is connected to the battery V E The voltage regulator module and the GND pin of the MCU are grounded; the resistor R1 and the resistor R2 are connected in series and connected between the cathode of the diode D1 and the ground respectively; the capacitor C cf One end is connected between resistor R1 and resistor R2, and capacitor C cf The other end of the MCU is grounded; the AD1 pin of the MCU is connected between the resistor R1 and the resistor R2; the resistor R sh Connected between the high voltage inverter circuit and the ground; the AD2 pin of the MCU is connected to the capacitor C cf One end and resistor R cf One end of the resistor R cf The other end is connected to the resistor R sh and the high voltage inverter circuit; the capacitor C cf The other end is grounded.

5. The method of controlling the hot moxibustion therapy system according to any one of claims 1 to 4, characterized in that: The control module controls the high voltage output by the BOOST boost circuit to be stable at a set voltage value by adjusting the duty cycle, and the high voltage is input into the high-voltage inverter circuit and the moxibustion circuit respectively; wherein, the high-voltage inverter circuit inverts the high voltage into alternating current and inputs it into the high-voltage shaping circuit, and the high-voltage shaping circuit shapes the alternating current and outputs electrical energy to the lesion site of the human body for physical therapy; the moxibustion circuit converts the high voltage into electrical energy suitable for the operation of the moxibustion electrode plate through multi-stage energy storage and energy regulation, thereby realizing energy supply for the moxibustion process.

6. The method of controlling the hot moxibustion therapy system according to claim 5, characterized in that: The moxibustion circuit includes an input module, a moxibustion energy storage input stage, a first moxibustion energy storage intermediate stage, a second moxibustion energy storage intermediate stage, an output stage, a relay KA2 and a moxibustion electrode; the input module is composed of a diode D2 and an inductor L2, the diode D2 ensures the unidirectional inflow of electric energy, and is used for the capacitor to quickly output electric energy during moxibustion, and the inductor L2 suppresses the charging current spike to ensure high voltage stability and component safety; the moxibustion energy storage input stage, the first moxibustion energy storage intermediate stage, the second moxibustion energy storage intermediate stage and the output stage all contain energy storage capacitors and resistors of different resistance values, and the circuit structure and component parameters of the first moxibustion energy storage intermediate stage and the second moxibustion energy storage intermediate stage are the same; the relay KA2 controls the electric energy stored in the moxibustion circuit to be released to the moxibustion electrode, and the moxibustion electrode contains carbon fiber heating wire and mugwort components.

7. The method of controlling the hot moxibustion therapy system according to claim 6, characterized in that: The moxibustion energy storage input stage contains capacitors The first resistor with two resistance values ​​of R and the PMOS tube Q P And NMOS tube Q N ; Power supply connected capacitor Charging, the voltage rises to make the PMOS tube Q P And NMOS tube Q N The tubes are turned on in turn to release electrical energy. After stabilization, the resistance voltage division of this stage makes the NMOS tube Q N It is not conducting. The resistance voltage divider of the first moxibustion energy storage intermediate stage makes the corresponding NMOS tube continuously conducting to realize self-locking power transmission.

8. The method of controlling the hot moxibustion therapy system according to claim 7, characterized in that: The first moxibustion energy storage intermediate stage contains a capacitor Three second resistors with resistance R, a third resistor with resistance 9R, and a PMOS tube and NMOS tube The voltage of the moxibustion energy storage input stage makes the PMOS tube of the first moxibustion energy storage intermediate stage and NMOS tube The NMOS tube is turned on to receive electric energy. After stabilization, the resistor voltage division of this stage makes the NMOS tube It is not conducting, and the resistance voltage divider of the second moxibustion energy storage intermediate stage makes the corresponding NMOS tube continuously conducting to achieve self-locking power transmission.

9. The method of controlling the hot moxibustion therapy system according to claim 8, characterized in that: The second moxibustion energy storage intermediate stage contains a capacitor Three fourth resistors with a resistance value of R, a fifth resistor with a resistance value of 9R, and a PMOS tube and NMOS tube The voltage of the first moxibustion energy storage intermediate stage makes the PMOS tube of the second moxibustion energy storage intermediate stage and NMOS tube The NMOS tube is turned on to receive electric energy. After stabilization, the resistor voltage division of this stage makes the NMOS tube The output terminal is not conducting, and the resistance voltage division of the output terminal makes the corresponding NMOS tube continuously conducting to realize self-locking power transmission.

10. The method of controlling the hot moxibustion therapy system according to claim 9, characterized in that: The output stage includes capacitors A sixth resistor with a resistance of R and a seventh resistor with a resistance of 9R; the output stage provides stable electric energy for the moxibustion electrode after energy storage and adjustment by the moxibustion energy storage input stage, the first moxibustion energy storage intermediate stage, and the second moxibustion energy storage intermediate stage; The normally open contact of the relay KA2 is closed, controlling the electric energy stored in the capacitor in the moxibustion circuit to be released to the moxibustion electrode.

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