A GaN power amplifier chip automatic test system
By designing an automated testing system for GaN power amplifier chips, the problems of tedious traditional manual testing and the influence of human factors were solved, achieving efficient and accurate performance evaluation and detailed report generation.
Patent Information
- Application Number
- CN202510205789.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-25
- Publication Date
- 2025-11-11
- Estimated Expiration
- 2045-02-25
AI Technical Summary
Traditional manual testing methods for GaN power amplifier chips are cumbersome, time-consuming, and susceptible to human error, making it difficult to meet the requirements for high-precision testing.
An automated testing system for GaN power amplifier chips was designed, including a test control module, a data collection module, an analysis and processing module, and a report generation module. It enables automatic signal configuration, port connection, and data calculation, and provides detailed performance evaluation.
It improves testing efficiency and accuracy, provides comprehensive performance evaluation, and helps users gain a deeper understanding of the performance characteristics of GaN power amplifiers.
Smart Images
Figure CN120064932B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor testing technology, specifically to an automated testing system for GaN power amplifier chips. Background Technology
[0002] Semiconductor testing technology is an indispensable part of the semiconductor industry chain. With continuous advancements in manufacturing processes and the increasing complexity of System-on-a-Chip (SoC), semiconductor testing is playing an increasingly important role in projects. GaN power amplifiers are power amplifiers made from gallium nitride (GaN) material. The working principle of GaN power amplifiers is similar to other types of power amplifiers, amplifying low-power input signals to high-power signals. However, due to the superior properties of GaN material, GaN power amplifiers can operate at higher frequencies and over a wider power range while maintaining lower distortion and noise.
[0003] In the testing of GaN power amplifier chips, traditional manual testing methods have several shortcomings. First, manual testing is cumbersome and time-consuming, requiring testers to manually configure test signals, connect test equipment, and record and analyze results. This not only increases testing costs but also limits efficiency. Second, manual testing is susceptible to human error, making it difficult to guarantee the accuracy and consistency of results. Furthermore, as the performance of GaN power amplifier chips continues to improve, the requirements for testing accuracy are also increasing, and traditional manual testing methods can no longer meet these demands.
[0004] To address the aforementioned issues, it is necessary to propose an automated testing system for GaN power amplifier chips. Summary of the Invention
[0005] The purpose of this invention is to solve the problems existing in the background art and to propose an automated testing system for GaN power amplifier chips.
[0006] The objective of this invention can be achieved through the following technical solutions:
[0007] An automated testing system for GaN power amplifier chips includes a test control module, a test data collection module, an analysis and processing module, a result evaluation module, and a report generation module.
[0008] The test control module is responsible for initializing the test environment, configuring test signals, and controlling the interaction between the GaN power amplifier chip under test and the test hardware equipment.
[0009] The test signal generated by the signal source is initialized. The corresponding test signal type is selected and its signal parameters are configured according to the test requirements input by the user. The test signal types include, but are not limited to, sine wave, square wave and triangle wave.
[0010] The test requirements input by users include, but are not limited to: frequency response, large signal testing, gain, linearity measurement, overload testing, frequency bandwidth, frequency component processing, and distortion.
[0011] When the user inputs a test requirement of frequency response, gain, or linearity, a sine wave is selected; its time-domain expression is: Where A is the preset initial amplitude, and f is the preset initial frequency. The initial phase is preset;
[0012] When the user inputs a test requirement of large signal testing or overload testing, a square wave is selected; its time-domain expression is: Where sgn is the sign function, used to represent the characteristics of the square wave. The positive half-cycle is positive 1, in The negative half-cycle is -1; where A is the preset initial amplitude and f is the preset initial frequency. The preset initial phase;
[0013] When the user inputs a test requirement of frequency bandwidth, frequency component processing, or distortion, a triangular wave should be selected.
[0014] Its time-domain expression is: in Indicates to Round down; where A is the preset initial amplitude and f is the preset initial frequency. This is the preset initial phase.
[0015] In a preferred embodiment of the present invention, a mechanical control algorithm is used to control the connection and disconnection of the test equipment port and the power amplifier chip port, and the specific process is as follows:
[0016] Before the test begins, a preset port connection scheme vector C(j) = {C(1), C(2), ..., C(m)} is matched based on the user-input test requirements; where j is the port number of the GaN power amplifier, and m is the total number of ports of the GaN power amplifier; each element in the port connection scheme vector corresponds one-to-one with each port of the GaN power amplifier, and its specific value represents the connection requirement of its corresponding GaN power amplifier port. When the value of C(j) is 1, it means that port j needs to be connected to the test device; when the value of C(j) is 0, it means that port j does not need to be connected to the test device.
[0017] During testing, sensors and hardware drivers monitor the connection status between the test device ports and each port of the GaN power amplifier in real time, outputting a port connection status vector S(j) = {S(1), S(2), ..., S(m)}. Each element in the port connection status vector corresponds one-to-one with each port of the GaN power amplifier, and its specific value represents the actual connection status of its corresponding GaN power amplifier port. When S(j) is 1, it means that port j is connected to the test device; when S(j) is 0, it means that port j is not connected to the test device.
[0018] At preset time intervals, the connection status of all ports is checked. A comparison is made between the preset port connection scheme vector and the real-time port status vector to determine if each port is correctly connected according to the test requirements. For each port j of the GaN power amplifier, the values of C(j) and S(j) are obtained. If C(j) = S(j), the port connection status is considered correct; if C(j) = 1 and S(j) = 0, the port connection status is considered incorrect, and a connection operation is required; if C(j) = 0 and S(j) = 1, the port connection status is considered correct, and a disconnection operation is required.
[0019] In a preferred embodiment of the present invention, automatic connection and disconnection control is performed based on the connection determination results of all ports; when the connection status of port j is determined to be incorrect and a connection operation needs to be performed, the connection mechanical control program of port j is started; port j is driven to adjust to a preset target position and dock with the test equipment port at the target position; subsequently, the port connection status element S(j) of port j is updated to 1.
[0020] When the connection status of port j is determined to be incorrect and a disconnection operation is required, the mechanical control program for disconnecting port j is started; port j is driven to disconnect and move away from the test device port until the preset safe disconnection is achieved; then, the port connection status element S(j) of port j is updated to 0.
[0021] The test data collection module is responsible for calculating the test performance parameters of the GaN power amplifier in real time, including the output voltage V. out Load resistance R load The reflected signal voltage V at each test signal frequency f ref (f) Incident signal voltage V at each test signal frequency f incident (f) Input power V out Output power P out and input power P in .
[0022] The analysis and processing module is responsible for processing the test indicator data sent by the data acquisition module and generating the corresponding test result data.
[0023] Adjust the frequency f of the input signal and record the reflected signal voltage V when the test signal frequency f is the characteristic value f0. ref (f0) and incident signal voltage V incident (f0).
[0024] By preset formula Calculate the output characteristic power P out And characteristic return loss RL(f0).
[0025] As a preferred embodiment of the present invention, the frequency f of the input signal is adjusted within the range of (0, fmax), the return loss RL(f0) corresponding to different frequencies f is calculated, and a return loss-frequency graph is generated to show the graph of return loss changing with frequency.
[0026] As a preferred embodiment of the present invention, a preset regression function is used. The function relationship between return loss RL(f) and input signal frequency f in the return loss-frequency diagram is fitted to solve for the values of λ1, λ2, λ3, and λ4; where λ1, λ2, λ3, and λ4 are the regression fitting parameters to be determined; RL min It is the minimum return loss in the return loss-frequency diagram.
[0027] As a preferred embodiment of the present invention, a preset formula is used. Calculate the return loss regression anomaly parameter E(RL); where and All of these are standard values of the regression fitting parameters.
[0028] As a preferred embodiment of the present invention, a preset formula is used. Calculate the gain G;
[0029] In a preferred embodiment of the present invention, the frequency f of the input signal is adjusted, with an adjustment range of (0, fmax). The maximum gain Gmax and the corresponding frequency fc generated during frequency adjustment are calculated using a preset formula. Calculate the gain amplitude |H(f)| and gain phase θ(f); where fr is the preset cutoff frequency; where β is the preset attenuation factor and γ is the preset phase tilt factor; where u is the imaginary unit and u×u=-1.
[0030] As a preferred embodiment of the present invention, a preset formula is used. Calculate the gain flatness ΔG; where and These represent the maximum and minimum values of the gain G obtained when the frequency f is adjusted from 0 to fmax, respectively.
[0031] The results evaluation module analyzes the performance of the GaN power amplifier chip based on the computational processing of the analysis and processing module.
[0032] If the output characteristic power P out If the output characteristic power P exceeds the preset maximum threshold, the chip is deemed to be in an abnormal operating state; if the output characteristic power P... out If the signal is less than the preset minimum threshold, it is determined that there is signal attenuation or circuit failure.
[0033] If the characteristic return loss RL(f0) is not within the preset reasonable fluctuation range of characteristic return loss, and the return loss regression anomaly parameter E(RL) is greater than the preset threshold, then it is determined that there is a serious signal reflection phenomenon.
[0034] If the maximum gain Gmax is not within the preset reasonable range, the gain amplitude |H(f)| and gain phase θ(f) are further determined. If the gain amplitude |H(f)| is greater than the preset threshold, it is determined that there is an abnormal signal gain. If the gain phase θ(f) is not within the preset reasonable fluctuation range of gain phase, it is determined that the gain of the GaN power amplifier chip may be too high or too low at certain frequency points, resulting in signal distortion, saturation or overload, affecting the overall performance of the GaN power amplifier.
[0035] If the gain flatness ΔG is greater than the preset threshold, it is determined that the gain fluctuates too much throughout the entire operating frequency band, resulting in unstable signal output.
[0036] The report generation module records and integrates data collected during the testing process, gathering detailed results on the GaN power amplifier chip performance, including output characteristic power P. out The test report includes the specific values and related judgment results for characteristic return loss RL(f0), return loss regression anomaly parameter E(RL), maximum gain Gmax, gain amplitude |H(f)|, gain phase θ(f), and gain flatness ΔG. A final test report is then generated for user viewing and analysis.
[0037] Compared with the prior art, the beneficial effects of the present invention are:
[0038] 1. This invention automatically initializes the test environment and configures test signals through an integrated test control module, and automatically selects and configures the corresponding test signal type and parameters according to the user's input test requirements. Utilizing a mechanical control algorithm, the system can automatically connect and disconnect the test equipment port from the power amplifier chip port, thereby eliminating the tedium and errors of manual operation and improving test efficiency and accuracy.
[0039] 2. The test data collection module of this invention calculates and records key test performance parameters of the GaN power amplifier in real time, such as output voltage, input power, and output power. The collected test data is calibrated and analyzed to generate detailed test results, including key indicators such as output characteristic power, characteristic return loss, and gain. Through advanced analysis such as generating return loss-frequency diagrams, fitting the functional relationship between return loss and input signal frequency, calculating gain amplitude and phase, and gain flatness, the system can provide a more comprehensive performance evaluation, helping users gain a deeper understanding of the performance characteristics of the GaN power amplifier.
[0040] 3. This invention accurately evaluates the performance of GaN power amplifier chips based on the processing results of the analysis module, including determining whether the chip's operating state is abnormal, whether signal reflection exists, and whether signal gain is abnormal. It provides users with a convenient way to track and compare the performance of different GaN power amplifier chips, thereby enabling them to make decisions regarding the evaluation of test results. Attached Figure Description
[0041] To facilitate understanding by those skilled in the art, the present invention will be further described below with reference to the accompanying drawings:
[0042] Figure 1 This is a system block diagram of the present invention;
[0043] Figure 2 This is a schematic diagram of the return loss-frequency diagram proposed in the embodiments of the present invention. Detailed Implementation
[0044] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0045] Please see Figure 1 As shown, an automated testing system for GaN power amplifier chips includes a test control module, a test data collection module, an analysis and processing module, a result evaluation module, and a report generation module.
[0046] The test control module is responsible for initializing the test environment, configuring test signals, and controlling the interaction between the GaN power amplifier chip under test and the test hardware equipment.
[0047] The test signal generated by the signal source is initialized. The corresponding test signal type is selected and its signal parameters are configured according to the test requirements input by the user. The test signal types include, but are not limited to, sine wave, square wave and triangle wave.
[0048] The test requirements input by users include, but are not limited to: frequency response, large signal testing, gain, linearity measurement, overload testing, frequency bandwidth, frequency component processing, and distortion.
[0049] When the user inputs a test requirement of frequency response, gain, or linearity, a sine wave is selected; its time-domain expression is: Where A is the preset initial amplitude, and f is the preset initial frequency. The preset initial phase;
[0050] When the user inputs a test requirement of large signal testing or overload testing, a square wave is selected; its time-domain expression is: Where sgn is the sign function, used to represent the characteristics of the square wave. The positive half-cycle is positive 1, in The negative half-cycle is -1; where A is the preset initial amplitude and f is the preset initial frequency. The preset initial phase;
[0051] When the user inputs a test requirement of frequency bandwidth, frequency component processing, or distortion, a triangular wave should be selected.
[0052] Its time-domain expression is: in Indicates to Round down; where A is the preset initial amplitude and f is the preset initial frequency. The preset initial phase;
[0053] Furthermore, a mechanical control algorithm is used to control the connection and disconnection of the test equipment port and the power amplifier chip port automatically. The specific process is as follows:
[0054] Before the test begins, a preset port connection scheme vector C(j) = {C(1), C(2), ..., C(m)} is matched based on the user-input test requirements; where j is the port number of the GaN power amplifier, and m is the total number of ports of the GaN power amplifier; each element in the port connection scheme vector corresponds one-to-one with each port of the GaN power amplifier, and its specific value represents the connection requirement of its corresponding GaN power amplifier port. When the value of C(j) is 1, it means that port j needs to be connected to the test device; when the value of C(j) is 0, it means that port j does not need to be connected to the test device.
[0055] During testing, sensors and hardware drivers monitor the connection status between the test device ports and each port of the GaN power amplifier in real time, outputting a port connection status vector S(j) = {S(1), S(2), ..., S(m)}. Each element in the port connection status vector corresponds one-to-one with each port of the GaN power amplifier, and its specific value represents the actual connection status of its corresponding GaN power amplifier port. When S(j) is 1, it means that port j is connected to the test device; when S(j) is 0, it means that port j is not connected to the test device.
[0056] At preset time intervals, the connection status of all ports is checked. A comparison is made between the preset port connection scheme vector and the real-time port status vector to determine if each port is correctly connected according to the test requirements. For each port j of the GaN power amplifier, the values of C(j) and S(j) are obtained. If C(j) = S(j), the port connection status is considered correct; if C(j) = 1 and S(j) = 0, the port connection status is considered incorrect, and a connection operation is required; if C(j) = 0 and S(j) = 1, the port connection status is considered correct, and a disconnection operation is required.
[0057] Furthermore, automatic connection and disconnection control is performed based on the connection determination results of all ports; when the connection status of port j is determined to be incorrect and a connection operation needs to be performed, the connection mechanical control program of port j is started; port j is driven to adjust to the preset target position and dock with the test equipment port at the target position; subsequently, the port connection status element S(j) of port j is updated to 1.
[0058] When the connection status of port j is determined to be incorrect and a disconnection operation is required, the mechanical control program for disconnecting port j is started; port j is driven to disconnect and move away from the test device port until the preset safe disconnection is achieved; then, the port connection status element S(j) of port j is updated to 0.
[0059] The test data collection module is responsible for calculating the test performance parameters of the GaN power amplifier in real time, including the output voltage V. out Load resistance R load The reflected signal voltage V at each test signal frequency f ref (f) Incident signal voltage V at each test signal frequency f incident (f) Input power V out Output power P out and input power P in .
[0060] The analysis and processing module is responsible for processing the test indicator data sent by the data acquisition module and generating the corresponding test result data.
[0061] Adjust the frequency f of the input signal and record the reflected signal voltage V when the test signal frequency f is the characteristic value f0. ref (f0) and incident signal voltage V incident (f0).
[0062] By preset formula Calculate the output characteristic power P out And characteristic return loss RL(f0).
[0063] Please see Figure 2 As shown, the frequency f of the input signal is adjusted within the range of (0, fmax). The return loss RL(f0) corresponding to different frequencies f is calculated, and a return loss-frequency graph is generated to show the graph of return loss changing with frequency.
[0064] Furthermore, through a pre-defined regression function The function relationship between return loss RL(f) and input signal frequency f in the return loss-frequency diagram is fitted to solve for the values of λ1, λ2, λ3, and λ4; where λ1, λ2, λ3, and λ4 are the regression fitting parameters to be determined; RL min It is the minimum return loss in the return loss-frequency diagram.
[0065] Furthermore, through preset formulas Calculate the return loss regression anomaly parameter E(RL); where and All of these are standard values of the regression fitting parameters.
[0066] Furthermore, through preset formulas Calculate the gain G;
[0067] Furthermore, the frequency f of the input signal is adjusted, with an adjustment range of (0, fmax). The maximum gain Gmax and the corresponding frequency fc generated during frequency adjustment are calculated using a preset formula. Calculate the gain amplitude |H(f)| and gain phase θ(f); where fr is the preset cutoff frequency; where β is the preset attenuation factor and γ is the preset phase tilt factor; where u is the imaginary unit and u×u=-1.
[0068] Furthermore, through preset formulas Calculate the gain flatness ΔG; where and These represent the maximum and minimum values of the gain G obtained when the frequency f is adjusted from 0 to fmax, respectively.
[0069] The results evaluation module analyzes the performance of the GaN power amplifier chip based on the computational processing of the analysis and processing module.
[0070] If the output characteristic power P out If the output characteristic power P exceeds the preset maximum threshold, the chip is deemed to be in an abnormal operating state; if the output characteristic power P... out If the signal is less than the preset minimum threshold, it is determined that there is signal attenuation or circuit failure.
[0071] If the characteristic return loss RL(f0) is not within the preset reasonable fluctuation range of characteristic return loss, and the return loss regression anomaly parameter E(RL) is greater than the preset threshold, then it is determined that there is a serious signal reflection phenomenon.
[0072] If the maximum gain Gmax is not within the preset reasonable range, the gain amplitude |H(f)| and gain phase θ(f) are further determined. If the gain amplitude |H(f)| is greater than the preset threshold, it is determined that there is an abnormal signal gain. If the gain phase θ(f) is not within the preset reasonable fluctuation range of gain phase, it is determined that the gain of the GaN power amplifier chip may be too high or too low at certain frequency points, resulting in signal distortion, saturation or overload, affecting the overall performance of the GaN power amplifier.
[0073] If the gain flatness ΔG is greater than the preset threshold, it is determined that the gain fluctuates too much throughout the entire operating frequency band, resulting in unstable signal output.
[0074] The report generation module records and integrates data collected during the testing process, gathering detailed results on the GaN power amplifier chip performance, including output characteristic power P. out The test report includes the specific values and related judgment results for characteristic return loss RL(f0), return loss regression anomaly parameter E(RL), maximum gain Gmax, gain amplitude |H(f)|, gain phase θ(f), and gain flatness ΔG. A final test report is then generated for user viewing and analysis.
[0075] It should be understood that the terms “comprising” and “including” used in this disclosure and claims indicate the presence of the described features, integrals, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.
[0076] It should also be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this disclosure. As used herein and in the claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.
[0077] The preferred embodiments of the present invention disclosed above are merely illustrative of the invention. These preferred embodiments do not exhaustively describe all details, nor do they limit the invention to specific implementations. Clearly, many modifications and variations can be made based on the content of this specification. This specification selects and specifically describes these embodiments to better explain the principles and practical applications of the invention, thereby enabling those skilled in the art to better understand and utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims
1. An automated testing system for GaN power amplifier chips, comprising a test control module, a test data collection module, and an analysis and processing module, characterized in that: The test control module is responsible for initializing the test environment, configuring test signals, and controlling the interaction between the GaN power amplifier chip under test and the test hardware device; it initializes the test signals generated by the signal source, selects the corresponding test signal type according to the test requirements input by the user, and configures its signal parameters. The test signal types include sine wave, square wave, and triangle wave. The test equipment port and the power amplifier chip port are controlled by a mechanical control algorithm to automatically connect and disconnect. User-inputted test requirements include: frequency response, large signal testing, gain, linearity measurement, overload testing, frequency bandwidth, frequency component processing, and distortion. A sine wave is selected when the user-inputted test requirement is frequency response, gain, or linearity measurement; a square wave is selected when the user-inputted test requirement is large signal testing or overload testing; and a triangle wave is selected when the user-inputted test requirement is frequency bandwidth, frequency component processing, or distortion. The test data collection module is responsible for calculating the test performance parameters of the GaN power amplifier in real time, including output voltage, load resistance, reflected signal voltage at each test signal frequency f, incident signal voltage at each test signal frequency f, input power, and output power. The analysis and processing module is responsible for processing the test index data sent by the data acquisition module and generating corresponding test result data, including output characteristic power, characteristic return loss, return loss regression anomaly parameters, maximum gain, gain amplitude, gain phase, and gain flatness; the calculation process for the return loss regression anomaly parameters is as follows: Adjust the frequency f of the input signal, with an adjustment range of (0, fmax), and calculate the return loss corresponding to different frequencies f. Generate a return loss-frequency graph, which displays a chart showing how return loss changes with frequency; Through a pre-defined regression function The function relationship between return loss RL(f) and input signal frequency f in the return loss-frequency diagram is fitted to solve for the values of λ1, λ2, λ3 and λ4; where λ1, λ2, λ3 and λ4 are the regression fitting parameters to be determined. It is the minimum return loss in the return loss-frequency diagram; By preset formula Calculate the return loss regression anomaly parameter E(RL); where , , and All of these are standard values of the regression fitting parameters.
2. The automated testing system for GaN power amplifier chips according to claim 1, characterized in that, It also includes a results evaluation module and a report generation module; The results evaluation module analyzes the performance of the GaN power amplifier chip based on the computational processing of the analysis and processing module. The report generation module is responsible for collecting and integrating data during the testing process. It collects detailed results on the performance of the GaN power amplifier chip during the testing process, including specific values and related judgment results for output characteristic power, characteristic return loss, return loss regression anomaly parameters, maximum gain, gain amplitude, gain phase, and gain flatness; and generates the final test report for users to view and analyze.
3. The automated testing system for GaN power amplifier chips according to claim 1, characterized in that, The specific process of selecting the corresponding test signal type and configuring its signal parameters based on the user's input test requirements is as follows: The time-domain expression for a sine wave is: Where A is the preset initial amplitude and f is the preset initial frequency. The preset initial phase; The time-domain expression of a square wave is: Where sgn is the sign function, used to represent the characteristics of square waves. The positive half-cycle is positive 1, in The negative half-cycle is -1; where A is the preset initial amplitude and f is the preset initial frequency. The preset initial phase; The time-domain expression for a triangular wave is: ;in Indicates to Round down; where A is the preset initial amplitude and f is the preset initial frequency. This is the preset initial phase.
4. The automated testing system for GaN power amplifier chips according to claim 1, characterized in that, The specific process of using mechanical control algorithms to control the ports of the test equipment and the power amplifier chip is as follows: Before the test begins, a preset port connection scheme vector C(j) = {C(1), C(2), ..., C(m)} is matched according to the test requirements input by the user; where j is the port number of the GaN power amplifier and m is the total number of ports of the GaN power amplifier; each element in the port connection scheme vector corresponds one-to-one with each port of the GaN power amplifier, and its specific value represents the connection requirements of the corresponding GaN power amplifier port; when the value of C(j) is 1, it means that port j needs to be connected to the test device, and when the value of C(j) is 0, it means that port j does not need to be connected to the test device; During the test, the connection status between the test device port and each port of the GaN power amplifier is monitored in real time by sensors and hardware drivers, and a port connection status vector S(j) = {S(1), S(2), ..., S(m)} is output. Each element in the port connection status vector corresponds one-to-one with each port of the GaN power amplifier, and its specific value represents the actual connection status of the corresponding GaN power amplifier port. When S(j) is 1, it means that port j has been connected to the test device, and when S(j) is 0, it means that port j has not been connected to the test device. At preset time intervals, all ports are checked for connectivity. The connection vector is compared with the preset port connection scheme vector and the real-time port status vector to determine whether each port is correctly connected according to the test requirements. For each port j of the GaN power amplifier, the values of C(j) and S(j) are obtained. If C(j) = S(j), the port connection status is determined to be correct. If C(j) = 1 and S(j) = 0, the port connection status is determined to be incorrect, and a connection operation needs to be performed. If C(j) = 0 and S(j) = 1, the port connection status is determined to be correct, and a disconnection operation needs to be performed. Automatic connection and disconnection control is performed based on the connection determination results of all ports.
5. The automated testing system for GaN power amplifier chips according to claim 4, characterized in that, The connection operation is specifically as follows: Start the mechanical control program for port j; drive port j to adjust to the preset target position and connect with the test equipment port at the target position; then update the port connection status element S(j) of port j to 1.
6. The automated testing system for GaN power amplifier chips according to claim 4, characterized in that, The disconnection operation specifically refers to: Initiate the mechanical control program to disconnect port j; reverse drive port j to disconnect and move away from the test device port until the preset safe disconnection is reached; subsequently, update the port connection state element S(j) of port j to 0.
7. The automated testing system for GaN power amplifier chips according to claim 1, characterized in that, The specific process of processing the test index data is as follows: Adjust the frequency f of the input signal and record the reflected signal voltage when the test signal frequency f is the characteristic value f0. and incident signal voltage ; By preset formula Calculate the output characteristic power and characteristic return loss ; By preset formula Calculate the gain G; Adjust the frequency f of the input signal, with an adjustment range of (0, fmax); calculate the maximum gain Gmax and the corresponding frequency fc generated during frequency adjustment, using a preset formula. Calculate the gain amplitude and gain phase Where fr is the preset cutoff frequency; where β is the preset attenuation factor and γ is the preset phase tilt factor; By preset formula Calculate gain flatness ;in and These represent the maximum and minimum values of the gain G obtained when the frequency f is adjusted from 0 to fmax, respectively.
8. The automated testing system for GaN power amplifier chips according to claim 2, characterized in that, The specific process for testing and analyzing the performance of GaN power amplifier chips is as follows: If the output characteristic power If the value exceeds the preset maximum threshold, the chip is determined to be in an abnormal operating state. If the output characteristic power If the signal is less than the preset minimum threshold, it is determined that there is signal attenuation or circuit failure. If characteristic return loss If the return loss does not fall within the preset reasonable fluctuation range and the return loss regression anomaly parameter E(RL) is greater than the preset threshold, then it is determined that there is a serious signal reflection phenomenon. If the maximum gain Gmax is not within the preset reasonable range, then the gain amplitude is further determined. and gain phase If the gain amplitude If the signal gain exceeds a preset threshold, it is determined that there is an abnormal signal gain. If gain phase If the gain phase fluctuation is not within the preset reasonable fluctuation range, it is determined that the gain of the GaN power amplifier chip is too high or too low at certain frequency points, resulting in signal distortion, saturation or overload, which affects the overall performance of the GaN power amplifier. If gain flatness If the gain exceeds the preset threshold, it is determined that the fluctuation of the gain is too large in the entire operating frequency band, resulting in unstable signal output.