Method for manufacturing light-emitting element, light-emitting element, and display device

Abstract

This method for manufacturing a light-emitting element comprises: a step for preparing a base substrate (1); a step for forming a first resist pattern (P1) on the base substrate (1), the first resist pattern (P1) including a first resist portion (R1) and a first opening portion (H1), the first resist portion (R1) comprising a material resistant to a specific solvent; a step for applying a first solution (S1) on the first resist pattern (P1), the first solution (S1) containing a plurality of light-emitting first quantum dots, a specific solvent, and a precursor of a metal sulfide; and a step for removing the first resist portion (R1) and leaving at least a portion of the first metal sulfide film (Q1) formed by applying the first solution (S1) as the first light-emitting layer (E1).

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a light-emitting element, a light-emitting element, and a display device. Background Art

[0002] Conventionally, a method for manufacturing a light-emitting element in which a light-emitting layer containing quantum dots (Qunatum Dot, QD) is separately coated by a peeling method has been known (Patent Document 1). Prior Art Documents Patent Documents

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 2009-87760 Summary of the Invention Technical Problem to be Solved by the Invention

[0004] The present inventors focused on an inorganic QD layer containing QD and an inorganic matrix that holds the QD. The inorganic matrix refers to a component made of an inorganic material that contains other substances and holds them. That is, the inorganic matrix referred to here is a component made of an inorganic material that contains QD and holds it. This inorganic matrix is an element of the film that constitutes the QD distribution.

[0005] An object of one aspect of the present disclosure is to separately coat an inorganic QD layer containing QD and an inorganic matrix by a peeling method. Technical Solution for Solving the Technical Problem

[0006] To achieve the above object, a method for manufacturing a light-emitting element according to one technical solution of the present disclosure includes: a step of preparing a base substrate; a step of forming a first resist pattern on the base substrate, the first resist pattern including a first resist portion made of a material resistant to a specific solvent and a first opening portion; a step of coating a first solution on the first resist pattern, the first solution containing a plurality of luminescent first quantum dots, the specific solvent, and a precursor of metal sulfide; and a step of removing the first resist portion and leaving at least a part of the first metal sulfide film formed by coating the first solution as a first light-emitting layer.

[0007] To achieve the above object, a light-emitting element according to one technical solution of the present disclosure includes: a lower electrode; a barrier that covers an edge of the lower electrode; a first metal sulfide layer that does not overlap with the barrier in a plan view and has a continuous film of metal sulfide containing a plurality of quantum dots; and a second metal sulfide layer that overlaps with the barrier in a plan view, contains a plurality of quantum dots, and has a lower concentration of the metal sulfide than the first metal sulfide layer.

[0008] To achieve the above object, a display device according to one technical solution of the present invention includes a light-emitting element according to one technical solution of the present invention. Advantageous Effects

[0009] According to one aspect of the present disclosure, an inorganic QD layer including QD and an inorganic matrix can be spin-coated by a peeling method. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a cross-sectional view showing a lower layer formation step of a method for manufacturing a light-emitting element according to the first embodiment. Figure 2 It is a cross-sectional view showing a first color template formation step of the method for manufacturing the light-emitting element. Figure 3 It is a cross-sectional view showing a first color coating step of the method for manufacturing the light-emitting element. Figure 4 It is a cross-sectional view showing an exposure step of the method for manufacturing the light-emitting element. Figure 5 It is a cross-sectional view showing a peeling step of the method for manufacturing the light-emitting element. Figure 6 It is a cross-sectional view showing a second color template formation step of the method for manufacturing the light-emitting element. Figure 7 It is a cross-sectional view showing a second color coating step of the method for manufacturing the light-emitting element. Figure 8 It is a cross-sectional view showing a second color exposure step of the method for manufacturing the light-emitting element. Figure 9 It is a cross-sectional view showing a second color peeling step of the method for manufacturing the light-emitting element. Figure 10 It is a cross-sectional view showing a third color template formation step of the method for manufacturing the light-emitting element. Figure 11 It is a cross-sectional view showing a third color coating step of the method for manufacturing the light-emitting element. Figure 12 It is a cross-sectional view showing a third color exposure step of the method for manufacturing the light-emitting element. Figure 13 It is a cross-sectional view showing a third color peeling step of the method for manufacturing the light-emitting element. Figure 14 It is a cross-sectional view showing a CTL formation step of the method for manufacturing the light-emitting element. Figure 15 It is a cross-sectional view showing a lower layer film formation step of a modification of the method for manufacturing the light-emitting element according to the first embodiment. Figure 16 It is a cross-sectional view showing a first color template formation step of the modification of the manufacturing method. Figure 17 It is a cross-sectional view of the first color coating process showing a modified example of the above manufacturing method. Figure 18 It is a cross-sectional view of the exposure process showing a modified example of the above manufacturing method. Figure 19 It is a cross-sectional view of the peeling process showing a modified example of the above manufacturing method. Figure 20 It is a cross-sectional view of the second color mask forming process showing a modified example of the above manufacturing method. Figure 21 It is a cross-sectional view of the second color coating process showing a modified example of the above manufacturing method. Figure 22 It is a cross-sectional view of the second color exposure process showing a modified example of the above manufacturing method. Figure 23 It is a cross-sectional view of the second color peeling process showing a modified example of the above manufacturing method. Figure 24 It is a cross-sectional view of the third color mask forming process showing a modified example of the above manufacturing method. Figure 25 It is a cross-sectional view of the third color coating process showing a modified example of the above manufacturing method. Figure 26 It is a cross-sectional view of the third color exposure process showing a modified example of the above manufacturing method. Figure 27 It is a cross-sectional view of the third color peeling process showing a modified example of the above manufacturing method. Figure 28 It is a cross-sectional view of the CTL forming process showing a modified example of the above manufacturing method. Figure 29 It is a cross-sectional view of the light-emitting element of the second embodiment. Figure 30 It is a cross-sectional view of the light-emitting element of the comparative example. Figure 31 It is a cross-sectional view of the first exposure process of the manufacturing method of the light-emitting element of the second embodiment. Figure 32 It is a cross-sectional view of the second exposure process of the manufacturing method of the above light-emitting element. Figure 33 It is a cross-sectional view of the third exposure process of the manufacturing method of the above light-emitting element. Figure 34 It is a cross-sectional view of the peeling process of the manufacturing method of the above light-emitting element. Figure 35 It is a cross-sectional view of the CTL forming process of the manufacturing method of the above light-emitting element. Figure 36It is a cross-sectional view of the lower layer formation process of the manufacturing method of the light-emitting element of the third embodiment. Figure 37 It is a cross-sectional view of the first color template formation process of the manufacturing method of the above-mentioned light-emitting element. Figure 38 It is a cross-sectional view of the liquid-repellent property imparting process of the back-hanging method of the manufacturing method of the above-mentioned light-emitting element. Figure 39 It is a cross-sectional view of the first color coating process of the back-hanging method of the manufacturing method of the above-mentioned light-emitting element. Figure 40 It is a cross-sectional view of the exposure / stripping process of the back-hanging method of the manufacturing method of the above-mentioned light-emitting element. Figure 41 It is a cross-sectional view of the liquid-repellent property imparting process of the transfer method of the manufacturing method of the above-mentioned light-emitting element. Figure 42 It is a cross-sectional view of the first color coating process of the transfer method of the manufacturing method of the above-mentioned light-emitting element. Figure 43 It is a cross-sectional view of the exposure / stripping process of the transfer method of the manufacturing method of the above-mentioned light-emitting element. Figure 44 It is a cross-sectional view of the liquid-repellent property imparting process of the liquid-repellent agent mixed resist method of the manufacturing method of the above-mentioned light-emitting element. Figure 45 It is a cross-sectional view of the first color coating process of the liquid-repellent agent mixed resist method of the manufacturing method of the above-mentioned light-emitting element. Figure 46 It is a cross-sectional view of the exposure / stripping process of the liquid-repellent agent mixed resist method of the manufacturing method of the above-mentioned light-emitting element. Figure 47 It is a cross-sectional view of the liquid-repellent property imparting process of the liquid-repellent portion lamination method of the manufacturing method of the above-mentioned light-emitting element. Figure 48 It is a cross-sectional view of the first color coating process of the liquid-repellent portion lamination method of the manufacturing method of the above-mentioned light-emitting element. Figure 49 It is a cross-sectional view of the exposure / stripping process of the liquid-repellent portion lamination method of the manufacturing method of the above-mentioned light-emitting element. Figure 50 It is a cross-sectional view of the light-emitting element of the fourth embodiment. Figure 51 It is a cross-sectional view of a modified example of the light-emitting element of the fourth embodiment. Figure 52 It is a cross-sectional view of another modified example of the light-emitting element of the fourth embodiment. Figure 53 It is a cross-sectional view of yet another modified example of the light-emitting element of the fourth embodiment. Figure 54 It is a cross-sectional view of a coating process for a first color in a method for manufacturing a light-emitting element according to the fifth embodiment. Figure 55 It is a cross-sectional view of an upper CTL coating process in the method for manufacturing the above light-emitting element. Figure 56 It is a cross-sectional view of an exposure process in the method for manufacturing the above light-emitting element. Figure 57 It is a cross-sectional view of a peeling process in the method for manufacturing the above light-emitting element. Figure 58 It is a cross-sectional view of a light-emitting element according to the sixth embodiment. Figure 59 It is a top view of a light-emitting element according to the seventh embodiment. Figure 60 It is a top view of a modified example of the above light-emitting element. Figure 61 It is a top view of another modified example of the above light-emitting element. Figure 62 It is a top view of yet another modified example of the above light-emitting element. Figure 63 It is a top view of a first color formation process in a method for manufacturing a light-emitting element according to the seventh embodiment. Figure 64 It is a top view of a second color formation process in the method for manufacturing the above light-emitting element. Figure 65 It is a top view of a third color formation process in the method for manufacturing the above light-emitting element. Figure 66 It is a top view of a light-emitting element manufactured by the method for manufacturing the above light-emitting element. Figure 67 It is a top view of a first color formation process in a method for manufacturing another light-emitting element according to the seventh embodiment. Figure 68 It is a top view of a second color formation process in the method for manufacturing the above another light-emitting element. Figure 69 It is a top view of a third color formation process in the method for manufacturing the above another light-emitting element. Figure 70 It is a top view of yet another modified example of a light-emitting element according to the seventh embodiment. Detailed embodiments

[0011] (First embodiment) When the inorganic QD layer containing an inorganic matrix is to be spin-coated by the lift-off method, the polar solvent used for coating the inorganic QD layer dissolves the positive resist pattern used to form the inorganic QD layer. Therefore, in the first embodiment, by using a solvent-resistant resist pattern, the resist pattern does not dissolve in the polar solvent, and the inorganic QD layer can be spin-coated by the lift-off method.

[0012] Figure 1 It is a cross-sectional view showing the lower layer formation process of the manufacturing method of the light-emitting element of the first embodiment. Figure 2 It is a cross-sectional view showing the first color mask formation process of the manufacturing method of the above light-emitting element. Figure 3 It is a cross-sectional view showing the first color coating process. Figure 4 It is a cross-sectional view showing the exposure process. Figure 5 It is a cross-sectional view showing the lift-off process.

[0013] First, as Figure 1 shown, a substrate 1 is prepared. The substrate 1 includes a substrate 4, a bank 2 formed on the substrate 4, and a lower functional layer 3 formed so as to cover the substrate 4 and the bank 2.

[0014] Moreover, as Figure 2 shown, a first resist pattern P1 is formed on the base substrate 1. The first resist pattern P1 includes a first resist portion R1 made of a material resistant to polar solvents and a first opening H1. In Figure 2 , the first opening H1 is a positive cone shape that is wider on the upper side than on the substrate 4 side. The first opening H1 may also be an inverted cone shape that narrows on the upper side. In the case of a positive type where the solubility of the first resist pattern P1 in the developer increases when irradiated with light, it is formed by exposing and developing the pixel portion of the first color. In the case of a negative type where the solubility of the first resist pattern P1 in the developer decreases when irradiated with light, it is formed by exposing and developing the portion other than the pixel portion of the first color. The first resist pattern P1 is generally resistant to polar solvents as long as it is made of a water-soluble material. Examples of water-soluble materials include polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polyacrylic acid, polyacrylamide, polyethylene oxide, polyvinylamide, or polyamines, or materials copolymerized from two or more of them, or derivatives thereof. Examples of copolymerized materials include PVA-PVP graft copolymers. Hereinafter, the case where the first resist pattern P1 is a positive type will be described.

[0015] Next, as Figure 3As shown, a first solution S1 containing a plurality of luminescent first quantum dots, a polar solvent, and a precursor of an inorganic matrix is coated on the entire surface of the region where the first resist pattern P1 and the lower functional layer 3 are exposed. When the inorganic matrix is a metal sulfide, the precursor of the inorganic matrix preferably contains a metal sulfide. The precursor of the metal sulfide inorganic matrix preferably contains zinc dithiocarboxylate. The first resist portion R1 preferably contains a PVA-PVP graft copolymer. The polar solvent of the first solution S1 includes, for example, THF (tetrahydrofuran), NMF (N-methylformamide), DMF (N,N-dimethylformamide), diethyl sulfide, and the like.

[0016] Then, as Figure 4 shown, after evaporating the polar solvent from the coating film of the first solution S1 on the entire surface of the region where the first resist pattern P1 and the lower functional layer 3 are exposed, in order to react zinc dithiocarboxylate in the coating film to form zinc sulfide, ultraviolet rays (UV) or infrared rays are used for exposure so that the exposed portion becomes a first metal sulfide film Q1 containing a plurality of first quantum dots. The first metal sulfide film Q1 preferably has an area of 1000 nm 2 or more in the plane direction intersecting the thickness direction of the substrate 1 and is a continuous film.

[0017] In addition, firing may be performed instead of exposure.

[0018] Then, as Figure 5 shown, the first resist portion R1 of the first resist pattern P1 is removed, and a part of the first metal sulfide film Q1 is left as the first light-emitting layer E1. By removing the first resist portion R1, the portion of the first metal sulfide film Q1 located on the first resist portion R1 is removed, and the other portion is left as the first light-emitting layer E1. The first resist portion R1 is preferably removed by a stripping solution containing a surfactant.

[0019] The first resist portion R1 uses the stripping solution to strip and remove the first metal sulfide film Q1 from the substrate 1. As the stripping solution, water, DMSO (dimethyl sulfoxide), or NMP (N-methylpyrrolidone) is used. In order to easily strip the first resist portion R1 and the first metal sulfide film Q1 from the substrate 1, a surfactant may be added to the stripping solution, or external forces such as US (ultrasonic wave) and spray stripping may be applied.

[0020] The substrate 1 includes a bank 2. And, as Figure 5 shown, a part of the first light-emitting layer E1 is located above the bank 2.

[0021] Figure 6It is a cross-sectional view showing a second color template formation process of the above-described method for manufacturing a light-emitting element. Figure 7 It is a cross-sectional view showing a second color coating process. Figure 8 It is a cross-sectional view showing a second color exposure process. Figure 9 It is a cross-sectional view showing a second color stripping process. The same reference numerals are assigned to the same components as those described above, and their detailed descriptions are not repeated.

[0022] Next, as Figure 6 shown, after forming the first light-emitting layer E1, a second resist pattern P2 is formed. The second resist pattern P2 includes a second resist portion R2 made of a material resistant to a polar solvent and a second opening H2. The second opening H2 includes a region where the first light-emitting layer E1 is not formed.

[0023] Then, as Figure 7 shown, a second solution S2 containing a plurality of luminescent second quantum dots, a polar solvent, and a precursor of an inorganic matrix is coated on the entire surface of the second resist pattern P2 and the lower functional layer 3. The first quantum dots and the second quantum dots may also be configured to emit different colors.

[0024] Moreover, as Figure 8 shown, in order to react zinc dithiocarboxylate, the coating film of the second solution S2 on the entire surface of the second resist pattern P2 and the lower functional layer 3 is exposed, and the exposed portion becomes a second metal sulfide film Q2 containing a plurality of second quantum dots.

[0025] Next, as Figure 9 shown, the second resist portion R2 of the second resist pattern P2 is removed, and at least a part of the second metal sulfide film Q2 remains as the second light-emitting layer E2.

[0026] Figure 10 It is a cross-sectional view showing a third color template formation process of the above-described method for manufacturing a light-emitting element. Figure 11 It is a cross-sectional view showing a third color coating process. Figure 12 It is a cross-sectional view showing a third color exposure process. Figure 13 It is a cross-sectional view showing a third color stripping process. Figure 14 It is a cross-sectional view showing a CTL formation process. The same reference numerals are assigned to the same components as those described above, and their detailed descriptions are not repeated.

[0027] Moreover, as Figure 10As shown, after forming the second light-emitting layer E2, a third resist pattern P3 is formed. The third resist pattern P3 includes a third resist portion R3 made of a material resistant to polar solvents and a third opening portion H3 resist pattern. The third opening portion H3 includes a region where the first light-emitting layer E1 and the second light-emitting layer E2 are not formed.

[0028] Next, as Figure 11 shown, a third solution S3 containing a plurality of luminescent third quantum dots, a polar solvent, and a precursor of an inorganic matrix is coated on the entire surface of the third resist pattern P3 and the lower functional layer 3.

[0029] Then, as Figure 12 shown, the coating film of the third solution S3 on the entire surface of the third resist pattern P3 and the lower functional layer 3 is exposed, and the exposed portion becomes a third metal sulfide film Q3 containing a plurality of third quantum dots.

[0030] Then, as Figure 13 shown, the third resist portion R3 of the third resist pattern P3 is removed, and at least a part of the third metal sulfide film Q3 remains as the third light-emitting layer E3.

[0031] Next, as Figure 14 shown, an upper functional layer 5 in contact with the first light-emitting layer E1, the second light-emitting layer E2, and the third light-emitting layer E3 is formed. In the case of a cis structure where the anode is closer to the substrate 4 than the cathode, the upper functional layer 5 can be made of inorganic materials such as ZnO, MgZnO, LiZnO, AlZnO, and mixtures thereof. In the case of a reverse structure where the cathode is closer to the substrate 4 than the anode, it can be made of inorganic materials such as NiO, MoO 3 , TiO 2 and other inorganic materials, organic materials such as TFB (poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)-diphenylamine)), P-TPD (Poly(9-vinylcarbazole)), and PVK (Poly(9-vinylcarbazole)). Then, an upper electrode located above the first light-emitting layer E1, the second light-emitting layer E2, and the third light-emitting layer E3 is formed. The first light-emitting layer E1, the second light-emitting layer E2, and the third light-emitting layer E3 generate light in the visible light region by injecting charges from the quantum dots using the applied voltage between the base substrate 1 and the upper electrode.

[0032] The first light-emitting layer E1 includes a plurality of luminescent first quantum dots and an inorganic matrix that contains and holds the first quantum dots. The inorganic matrix contains a metal sulfide. The metal sulfide contains zinc sulfide.

[0033] Preferably, an inorganic matrix is filled in the light-emitting layer. The inorganic matrix can fill the regions other than the quantum dots in the light-emitting layer. The inorganic matrix can fill the regions other than the quantum dots in the light-emitting layer. In addition, the outer edge of the light-emitting layer does not need to be formed only by the inorganic matrix, and it is not excluded that a part of the quantum dots protrude from the inorganic matrix.

[0034] The inorganic matrix can also be the part of the light-emitting layer other than the quantum dots. The inorganic matrix can contain a plurality of quantum dots. The inorganic matrix can be formed in such a way as to fill the spaces between the plurality of quantum dots. The inorganic matrix can also locally or completely fill the spaces between the quantum dots.

[0035] Preferably, the inorganic matrix has a continuous film with an area of 1000 nm 2 or more in the plane direction orthogonal to the film thickness direction. The continuous film refers to a region in a plane that is not separated by materials other than the materials constituting the continuous film. Preferably, the inorganic material constituting the inorganic matrix described later has an area of 1000 nm 2 or more in the plane direction orthogonal to the film thickness direction.

[0036] The same material as the shell material of the quantum dots can also be used for the inorganic matrix. In this case, the average distance (inter-nuclear distance) between adjacent nuclei can be 3 nm or more, or 5 nm or more. Alternatively, the average distance between the above adjacent nuclei can be 0.5 times or more of the average nuclear diameter. The inter-nuclear distance is the distance obtained by averaging the shortest distances between 20 adjacent nuclei observed in the cross section. The inter-nuclear distance can be maintained wider than the distance when the shell materials are in contact with each other. The average nuclear diameter is obtained by averaging the nuclear diameters of 20 adjacent nuclei observed in the cross section. The nuclear diameter can be set as the diameter of a circle with the same area as the nuclear area in the cross-sectional observation.

[0037] When the concentration of the inorganic matrix in the light-emitting layer is measured according to the area ratio in the image processing in the cross-sectional observation, it only needs to be 9% or more and 70% or less. In addition, when the quantum dots have a core / shell structure, the concentration of the shell only needs to be 0% or more and 58% or less. In addition, when the shell material and the inorganic matrix material are the same (the constituent elements are the same), it is substantially difficult to distinguish between the shell and the inorganic matrix. Therefore, as the concentration of the combined region of the inorganic matrix and the shell, it only needs to be the numerical range obtained by adding the numerical range of the concentration of the shell to the numerical range of the concentration of the inorganic matrix described above.

[0038] The inorganic matrix can be solid at room temperature. Different from the core and shell of the quantum dots, the inorganic matrix can also be an amorphous structure.

[0039] The light-emitting layer may also be composed of quantum dots and an inorganic matrix. When analyzing the light-emitting layer using gas chromatography-mass spectrometry and Fourier transform infrared spectroscopy, the intensity of the chain structure of carbon detected may be below the noise level. When the light-emitting layer does not contain an organic ligand, the intensity of the detected chain structure of carbon becomes weak, below the noise level.

[0040] The inorganic material constituting the inorganic matrix is preferably an inorganic material having a band gap wider than that of the material constituting the quantum dots. The inorganic material constituting the inorganic matrix may be a semiconductor material or an insulator material. The inorganic material constituting the inorganic matrix may also be a sulfide semiconductor.

[0041] The inorganic material constituting the inorganic matrix includes, for example, metal sulfides and / or metal oxides. The metal sulfide may be, for example, zinc sulfide (ZnS), zinc magnesium sulfide (ZnMgS, ZnMgS 2 ), gallium sulfide (GaS, Ga 2 S 3 ), zinc telluride sulfide (ZnTeS), magnesium sulfide (MgS), zinc gallium sulfide (ZnGa 2 S 4 ), magnesium gallium sulfide (MgGa 2 S 4 ). The metal oxide may be zinc oxide (ZnO), titanium oxide (TiO 2 ), tin oxide (SnO 2 ), tungsten oxide (WO 3 ), zirconium oxide (ZrO 2 ), silicon oxide (SiO 2 ). In addition, the chemical formula recorded in parentheses after the compound name is a representative example. In addition, for the composition ratio recorded in the chemical formula, it is ideal if the composition of the actual compound conforms to the stoichiometric ratio represented by the chemical formula, but it does not necessarily have to be the stoichiometric ratio.

[0042] In addition, the above structure of the inorganic matrix is observed with a width of about 100 nm in the cross-section of the light-emitting layer. As long as it is known that it is the above structure, it is not necessary to observe it in all light-emitting layers.

[0043] In addition, as long as the main material of the inorganic matrix is an inorganic material, it does not prevent adding a material different from the main inorganic material as an additive.

[0044] (Variant of the first embodiment) As described above, when the inorganic QD layer including the inorganic substrate is separately coated by the lift-off method, the polar solvent used for coating the inorganic QD layer dissolves the resist pattern for forming the inorganic QD layer. In a modified example of the first embodiment, by using a low-polarity solvent to which the resist pattern is resistant instead of the polar solvent, the resist pattern is not dissolved in the low-polarity solvent, and the inorganic QD layer can be separately coated by the lift-off method.

[0045] Figure 15 It is a cross-sectional view showing a lower layer film forming process which is a modified example of a method for manufacturing a light-emitting element according to the first embodiment. Figure 16 It is a cross-sectional view showing a first color template forming process of the above-described modified example. Figure 17 It is a cross-sectional view showing a first color coating process of the above-described modified example. Figure 18 It is a cross-sectional view showing an exposure process of the above-described modified example. Figure 19 It is a cross-sectional view showing a lift-off process of the above-described modified example. The same reference numerals are given to the same components as those described above, and the detailed description thereof will not be repeated.

[0046] First, as Figure 15 shown, a base substrate 1 is prepared which includes a substrate 4, a barrier 2 formed on the substrate 4, and a lower functional layer 3 formed so as to cover the substrate 4 and the barrier 2.

[0047] Moreover, as Figure 16 shown, a first resist pattern P4 including a first resist portion R4 and a first opening portion H4 made of a material resistant to a low-polarity solvent is formed on the base substrate 1. When the first solution S1 is a polar solvent, the resist pattern deteriorates in existing ordinary resist materials. Here, general resist materials include, for example, resist materials containing photosensitive polyimide, positive-type phenolic resin, and negative-type acrylic resin. Therefore, if the first solution S1 is changed from a polar solvent to a low-polarity solvent, deterioration of the resist pattern can be suppressed even when using existing general resist materials. The first resist pattern P4 is the same as existing ordinary resist materials. As the low-polarity solvent used in the coating process shown in Figure 17 below, low-polarity solvents such as toluene, hexane, and chlorobenzene can be used, but toluene is preferably used. A low-polarity solvent means a solvent having a square root of the sum of squares of the dipole term and the hydrogen bond term in the Hansen solubility parameter of 8.3 or less. Next, as Figure 17 shown, a first solution S1 containing a plurality of luminescent first quantum dots, a low-polarity solvent, and a precursor of an inorganic substrate is coated on the entire upper surface of the first resist pattern P4 and the lower functional layer 3.

[0048] Then, as Figure 18As shown, in order to react zinc dithiocarboxylate, the coating film of the first solution S1 on the entire surface of the first resist pattern P4 and the lower functional layer 3 is exposed, and the exposed portion becomes a first metal sulfide film Q1 containing a plurality of first quantum dots.

[0049] Moreover, as Figure 19 shown, the first resist portion R4 of the first resist pattern P4 is removed, and at least a part of the first metal sulfide film Q1 remains as the first light-emitting layer E1.

[0050] Figure 20 is a cross-sectional view of a second color template forming process that is a modification of the above manufacturing method. Figure 21 is a cross-sectional view of a second color coating process of the above modification. Figure 22 is a cross-sectional view of a second color exposure process of the above modification. Figure 23 is a cross-sectional view of a second color stripping process of the above modification. The same reference numerals are given to the same components as the above components, and the detailed description thereof will not be repeated.

[0051] Next, as Figure 20 shown, after forming the first light-emitting layer E1, a second resist pattern P5 including a second resist portion R5 and a second opening H5 made of a material resistant to a low-polarity solvent is formed.

[0052] Then, as Figure 21 shown, a second solution S2 containing a plurality of luminescent second quantum dots, a low-polarity solvent, and a precursor of an inorganic matrix is coated on the entire surface of the second resist pattern P5 and the lower functional layer 3.

[0053] Moreover, as Figure 22 shown, in order to react zinc dithiocarboxylate, the coating film of the second solution S2 on the entire surface of the second resist pattern P5 and the lower functional layer 3 is exposed, and the exposed portion becomes a second metal sulfide film Q2 containing a plurality of second quantum dots.

[0054] Next, as Figure 23 shown, the second resist portion R5 of the second resist pattern P5 is removed, and at least a part of the second metal sulfide film Q2 remains as the second light-emitting layer E2.

[0055] Figure 24 is a cross-sectional view of a third color template forming process that is a modification of the above manufacturing method. Figure 25 is a cross-sectional view of a third color coating process of the above modification. Figure 26 is a cross-sectional view of a third color exposure process of the above modification. Figure 27 is a cross-sectional view of a third color stripping process of the above modification. Figure 28It is a cross-sectional view showing the CTL forming process of the above-described modified example. The same reference numerals are assigned to the same components as those described above, and the detailed description thereof will not be repeated.

[0056] Moreover, as Figure 24 shown, after forming the second light-emitting layer E2, a third resist pattern P6 including a third resist portion R6 and a third opening H6 made of a material resistant to a low-polarity solvent is formed.

[0057] Next, as Figure 25 shown, a third solution S3 containing a plurality of luminescent third quantum dots, a low-polarity solvent, and a precursor of an inorganic matrix is coated on the entire surface of the third resist pattern P6 and the lower functional layer 3.

[0058] Then, as Figure 26 shown, the coating film of the third solution S3 on the entire surface of the third resist pattern P6 and the lower functional layer 3 is exposed, and the exposed portion becomes a third metal sulfide film Q3 containing a plurality of third quantum dots.

[0059] Then, as Figure 27 shown, the third resist portion R6 of the third resist pattern P6 is removed, and at least a part of the third metal sulfide film Q3 remains as the third light-emitting layer E3.

[0060] Next, as Figure 28 shown, an upper functional layer 5 in contact with the first light-emitting layer E1, the second light-emitting layer E2, and the third light-emitting layer E3 is formed.

[0061] (Second Embodiment) Figure 29 It is a cross-sectional view of the light-emitting element 10 of the second embodiment. The same reference numerals are assigned to the same components as those described above, and the detailed description thereof will not be repeated.

[0062] The light-emitting element 10 includes: a lower electrode 11; a bank 2 that covers the edge of the lower electrode 11; light-emitting layers 12, 14, 16 (first inorganic dielectric layer) that do not overlap with the bank 2 in a plan view and have a continuous film of an inorganic dielectric containing a plurality of quantum dots; and deactivation layers 13, 15, 17 (second inorganic dielectric layer) that overlap with the bank 2 in a plan view, contain a plurality of quantum dots, and have a lower concentration of the inorganic dielectric than the light-emitting layers 12, 14, 16. The light-emitting layers 12, 14, 16 are layers containing a plurality of luminescent quantum dots and an inorganic matrix material, and the deactivation layers 13, 15, 17 are layers containing a plurality of deactivated quantum dots. The light-emitting layers 12, 14, 16 and the deactivation layers 13, 15, 17 are connected. That is, the light-emitting layer 12 is connected to the deactivation layer 13. The light-emitting layer 14 and the deactivation layer 15 are connected. The light-emitting layer 16 and the deactivation layer 17 are connected.

[0063] The light-emitting layer 12 and the deactivation layer 13 constitute the first light-emitting layer E4. The light-emitting layer 14 and the deactivation layer 15 constitute the second light-emitting layer E5. The light-emitting layer 16 and the deactivation layer 17 constitute the third light-emitting layer E6.

[0064] The deactivation layers 13, 15, and 17 are unexposed portions that were not exposed during manufacturing. Therefore, during the peeling process, a part of the inorganic matrix precursor flows out, and the amount of the inorganic medium is less than that of the exposed portions, i.e., the light-emitting layers 12, 14, and 16, which were exposed during manufacturing. Therefore, the deactivation layers 13, 15, and 17 do not protect the QDs and become deactivated.

[0065] Figure 30 It is a cross-sectional view of a light-emitting element of a comparative example. The same reference numerals are assigned to the same components as those described above, and the detailed description thereof will not be repeated.

[0066] The first light-emitting layer E7, the second light-emitting layer E8, and the third light-emitting layer E9 are exposed portions that were exposed during manufacturing. As Figure 30 shown, they are respectively formed by extending to the upper part of the bank 2. Therefore, there is a problem that the color purity is reduced due to light emission by electro-luminescence (EL) or photoluminescence (PL) in the part of the upper part of the bank 2 formed in the first light-emitting layer E7, the second light-emitting layer E8, and the third light-emitting layer E9. For example, the blue light emitted by the EL of the third light-emitting layer E9 is transmitted through the upper part of the bank 2 to the first light-emitting layer E7, and the first light-emitting layer E7 corresponding to the red light emits light by PL, resulting in a reduction in color purity.

[0067] Therefore, in the second embodiment, mask exposure is performed on the exposure that causes the inorganic matrix precursor to react, deactivating the deactivation layers 13, 15, and 17 that extend to the upper part of the bank 8 to suppress PL and EL, thereby suppressing the reduction in color purity.

[0068] Figure 31 It is a cross-sectional view of the first exposure process of the manufacturing method of the light-emitting element according to the second embodiment. Figure 32 It is a cross-sectional view of the second exposure process of the manufacturing method of the above-mentioned light-emitting element. Figure 33 It is a cross-sectional view of the third exposure process of the manufacturing method described above. Figure 34 It is a cross-sectional view of the peeling process of the manufacturing method described above. Figure 35 It is a cross-sectional view of the CTL formation process of the manufacturing method described above. The same reference numerals are assigned to the same components as those described above, and the detailed description thereof will not be repeated.

[0069] After performing the lower layer formation process, the first color template formation process, and the first color coating process, as Figure 31As shown, through the mask M1, the portion of the coating film of the first solution S1 above the barrier 2 is taken as the non-exposed portion, and a part of the inorganic matrix precursor material is caused to flow out through the stripping process, so that the first quantum dots contained in the non-exposed portion are inactivated through the stripping process, coating in subsequent processes, etc. The exposed portion becomes the first metal sulfide film Q1 containing a plurality of first quantum dots.

[0070] Then, after performing the stripping process, the second color template forming process, and the second color coating process, as Figure 32 shown, through the mask M2, the portion of the coating film of the second solution S2 above the barrier 2 is taken as the non-exposed portion, and a part of the inorganic matrix precursor material is caused to flow out through the stripping process, so that the second quantum dots contained in the non-exposed portion are inactivated. The exposed portion becomes the second metal sulfide film Q2 containing a plurality of second quantum dots.

[0071] Next, after performing the second color stripping process, the third color template forming process, and the third color coating process, as Figure 33 shown, through the mask M3, the portion of the coating film of the third solution S3 above the barrier 2 is taken as the non-exposed portion, and a part of the inorganic matrix precursor material is caused to flow out in the stripping process, so that the third quantum dots contained in the non-exposed portion are inactivated. The exposed portion becomes the third metal sulfide film Q3 containing a plurality of third quantum dots.

[0072] Then, as Figure 34 shown, the third resist portion R6 of the third resist pattern P6 is removed, and at least a part of the third metal sulfide film Q3 remains as the third light-emitting layer E6.

[0073] The first light-emitting layer E4 has: a light-emitting layer 12 containing a plurality of luminescent quantum dots; and an inactivated layer 13 containing a plurality of inactivated quantum dots. The second light-emitting layer E5 has: a light-emitting layer 14 containing a plurality of luminescent quantum dots; and an inactivated layer 15 containing a plurality of inactivated quantum dots. The third light-emitting layer E6 has: a light-emitting layer 16 containing a plurality of luminescent quantum dots; and an inactivated layer 17 containing a plurality of inactivated quantum dots.

[0074] Next, as Figure 35 shown, the upper functional layer 5 is formed, and the upper functional layer 5 is in contact with the first light-emitting layer E4, the second light-emitting layer E5, and the third light-emitting layer E6.

[0075] (Third Embodiment) When the inorganic QD layer is separately coated by the stripping method, since the light-emitting layer becomes firm, the peelability of the resist pattern is reduced. The third embodiment improves the peelability of the resist pattern.

[0076] Figure 36It is a cross-sectional view of a lower layer formation process of a method for manufacturing a light-emitting element according to a third embodiment. Figure 37 It is a cross-sectional view of a first color template formation process of the method for manufacturing the above light-emitting element. The same reference numerals are given to the same components as the above components, and the detailed description thereof will not be repeated.

[0077] First, as Figure 36 shown, a base substrate 1 is prepared. The base substrate 1 includes a substrate 4, a bank 2 formed on the substrate 4, and a lower functional layer 3 formed so as to cover the substrate 4 and the bank 2. In addition, the lower functional layer 3 may be applied separately.

[0078] Then, as Figure 37 shown, a first resist pattern P7 including a first resist portion R7 made of a material resistant to a specific solvent and a first opening H7 is formed on the base substrate 1. The specific solvent is a polar solvent or a low-polarity solvent.

[0079] Figure 38 It is a cross-sectional view of a liquid-repellent property imparting process related to a post-hanging method of the method for manufacturing the above light-emitting element. Figure 39 It is a cross-sectional view of a first color coating process of the above post-hanging method. Figure 40 It is a cross-sectional view of an exposure / stripping process of the above post-hanging method. The same reference numerals are given to the same components as the above components, and the detailed description thereof will not be repeated.

[0080] Next, as Figure 38 shown, in order to impart liquid repellency to the surface of the first resist portion R7 of the first resist pattern P7, a liquid-repellent portion L1 is formed so as to cover the first resist portion R7 by coating a solution containing a liquid-repellent agent that binds to the first resist portion R7.

[0081] Then, as Figure 39 shown, a first solution S1 containing a plurality of light-emitting first quantum dots, a polar solvent, and a precursor of an inorganic matrix is coated on the lower functional layer 3. On the first resist portion R7, due to the liquid-repellent action of the liquid-repellent portion L1, the first solution S1 is not coated.

[0082] Then, an exposure or firing process and a stripping process are performed, and the second resist portion is also imparted with liquid repellency. As Figure 40 shown, a first light-emitting layer E1 and a second light-emitting layer E2 are formed.

[0083] Figure 41 It is a cross-sectional view of a liquid-repellent property imparting process related to a transfer method of the method for manufacturing the above light-emitting element. Figure 42 It is a cross-sectional view of a first color coating process of the above transfer method. Figure 43It is a cross-sectional view showing the exposure / stripping process of the above-described transfer method. The same reference numerals are assigned to the same components as those described above, and their detailed descriptions are not repeated.

[0084] Figure 37 As shown, after the first resist pattern P7 is formed, in order to impart liquid repellency to the upper surface of the first resist portion R7, as Figure 41 shown, a liquid repellent portion L2 is formed on the upper surface of the first resist portion R7 by the transfer method.

[0085] Then, as Figure 42 shown, a first solution S1 containing a plurality of luminescent first quantum dots, a specific solvent, and a precursor of an inorganic matrix is coated on the lower functional layer 3 and the inner wall of the first opening H7 of the first resist pattern P7. On the upper surface of the first resist portion R7, due to the liquid repellent action of the liquid repellent portion L2, the first solution S1 is not coated.

[0086] Next, an exposure or firing process and a stripping process are performed. The second resist portion is also imparted with liquid repellency in the same manner. As Figure 43 shown, a first light emitting layer E1 and a second light emitting layer E2 are formed.

[0087] Figure 44 It is a cross-sectional view showing the liquid repellency imparting process of the liquid repellent agent mixed resist method for the manufacturing method of the above-described light emitting element. Figure 45 It is a cross-sectional view showing the first color coating process of the above-described liquid repellent agent mixed resist method. Figure 46 It is a cross-sectional view showing the exposure / stripping process of the above-described liquid repellent agent mixed resist method. The same reference numerals are assigned to the same components as those described above, and their detailed descriptions are not repeated.

[0088] The liquid repellent agent constituting the liquid repellent portion L3 is Figure 37 coated simultaneously with the first resist pattern P7 in the first color template forming process shown. Then, by exposure to the atmosphere or firing, the liquid repellent agent, as Figure 44 shown, segregates on the surface of the first resist portion R7 to form the liquid repellent portion L3.

[0089] Then, as Figure 45 shown, a first solution S1 containing a plurality of luminescent first quantum dots, a specific solvent, and a precursor of an inorganic matrix is coated on the lower functional layer 3 and the lower part of the inner wall of the first opening H7 of the first resist pattern P7. On the upper surface of the first resist portion R7 and the upper part of the inner wall of the first opening H7, due to the liquid repellent action of the liquid repellent portion L3, the first solution S1 is not coated.

[0090] Next, an exposure or firing process and a stripping process are performed. The second resist portion is also imparted with liquid repellency in the same manner. As Figure 46As shown, a first light-emitting layer E1 and a second light-emitting layer E2 are formed.

[0091] Figure 47 It is a cross-sectional view of a liquid-repellent property imparting step of a liquid-dropping portion lamination method for manufacturing the above-described light-emitting element. Figure 48 It is a cross-sectional view of a first color coating step of the above-described liquid-repellent portion lamination method. Figure 49 It is a cross-sectional view of an exposure / stripping step of the above-described liquid-repellent portion lamination method. The same reference numerals are given to the same components as those described above, and the detailed description thereof is not repeated.

[0092] As Figure 47 shown, a resist layer having photosensitivity and liquid repellency is laminated on the first resist portion R7, and while forming a first resist pattern P7, in order to impart liquid repellency to the upper surface of the first resist portion R7, as Figure 47 shown, a liquid-repellent portion L4 is formed on the upper surface of the first resist portion R7. The liquid-repellent portion L4 has an opening corresponding to the first opening H7.

[0093] Then, as Figure 48 shown, a first solution S1 containing a plurality of light-emitting first quantum dots, a specific solvent, and a precursor of an inorganic matrix is coated on the lower functional layer 3 and the inner wall of the first opening H7 of the first resist pattern P7. On the upper surface of the first resist portion R7, due to the liquid-repellent action of the liquid-repellent portion L4, the first solution S1 is not coated.

[0094] Next, an exposure or firing step and a stripping step are performed, and the second resist portion is also imparted with liquid repellency. As Figure 49 shown, a first light-emitting layer E1 and a second light-emitting layer E2 are formed.

[0095] As described above, by imparting liquid repellency to the upper surface of the first resist portion R7, a coating film of the first solution S1 is not formed on the upper surface of the first resist portion R7. Thereby, the coating film of the first solution S1 formed on the first resist portion R7 is reduced or disappears. As a result, the peelability of the resist pattern can be improved.

[0096] (Fourth Embodiment) Figure 50 It is a cross-sectional view of a light-emitting element 10A according to the fourth embodiment. The same reference numerals are given to the same components as those described above, and the detailed description thereof is not repeated.

[0097] The light-emitting element 10A includes: a lower electrode 11; a bank 2 that covers an edge of the lower electrode 11; light-emitting layers 12, 14, 16 that do not overlap with the bank 2 in a plan view and have a continuous film of a metal sulfide containing a plurality of quantum dots; and deactivation layers 13A, 15A, 17A that overlap with the bank 2 in a plan view, contain a plurality of quantum dots, and have a lower concentration of the metal sulfide than the light-emitting layers 12, 14, 16. The light-emitting layers 12, 14, 16 are layers containing a plurality of light-emitting quantum dots, and the deactivation layers 13A, 15A, 17A are layers containing a plurality of deactivated quantum dots. The light-emitting layers 12, 14, 16 and the deactivation layers 13A, 15A, 17A are connected.

[0098] The deactivation layer 13A is stacked on the central portion of the upper surface of the bank 2 with the deactivation layer 17A. Thereby, leakage of current from a portion of the lower functional layer 3 where the first light-emitting layer E4 and the third light-emitting layer E6 are not stacked can be suppressed.

[0099] In addition, the deactivation layer 13A is stacked on the upper surface of the bank 2 with the deactivation layer 15A. Thereby, leakage of current from a portion of the lower functional layer 3 where the first light-emitting layer E4 and the second light-emitting layer E5 are not stacked on the upper surface of the bank 2 is suppressed.

[0100] In this way, the base substrate 1 includes the bank 2 and the lower functional layer 3 that covers the bank. The first light-emitting layer E4 and the second light-emitting layer E5 overlap above the bank 2. And above the bank 2, the deactivation layer 13A (first deactivation layer) containing a plurality of deactivated quantum dots (first quantum dots) and the deactivation layer 15A (second deactivation layer) containing a plurality of deactivated quantum dots (second quantum dots) overlap.

[0101] Figure 51 It is a cross-sectional view of a light-emitting element 10B which is a modification of the fourth embodiment. The same reference numerals are given to the same components as those described above, and the detailed description thereof will not be repeated.

[0102] The light-emitting element 10B includes: light-emitting layers 12, 14, 16 that do not overlap with the bank 2 in a plan view and have a continuous film of a metal sulfide containing a plurality of quantum dots; and deactivation layers 13B, 15B, 17B that overlap with the bank 2 in a plan view, contain a plurality of quantum dots, and have a lower concentration of the metal sulfide than the light-emitting layers 12, 14, 16.

[0103] The deactivation layer 13B is stacked on the central portion of the upper surface of the bank 2 with the deactivation layer 15B and the deactivation layer 17B. Thereby, leakage of current from the lower functional layer 3 can be more reliably suppressed.

[0104] Figure 52This is a cross-sectional view of the light-emitting element 10C which is another modified example of the fourth embodiment. The same reference numerals are given to the same components as those described above, and the detailed description thereof will not be repeated.

[0105] The light-emitting element 10C includes: light-emitting layers 12, 14, and 16 which do not overlap with the bank 2 in a plan view and have a continuous film of a metal sulfide containing a plurality of quantum dots; and deactivation layers 13C, 15C, and 17C which overlap with the bank 2 in a plan view, contain a plurality of quantum dots, and have a lower concentration of the metal sulfide than the light-emitting layers 12, 14, and 16.

[0106] The deactivation layer 13C is laminated with the deactivation layer 17C so as to cover the entire upper surface of the bank 2. Thereby, leakage of current from a portion of the lower functional layer 3 corresponding to the end portion of the upper surface of the bank 2 where leakage is likely to occur due to a thinner film thickness can be suppressed. In this way, the deactivation layers 13C and 17C are laminated at a portion of the bank 2 where leakage is likely to occur, and leakage of current is suppressed. A part of the light-emitting layer 12 is laminated with a part of the deactivation layer 13C.

[0107] Figure 53 This is a cross-sectional view of the light-emitting element 10D which is another modified example of the fourth embodiment. The same reference numerals are given to the same components as those described above, and the detailed description thereof will not be repeated.

[0108] The light-emitting element 10D includes light-emitting layers 12, 14, and 16 and deactivation layers 13D, 15D, and 17D having a lower concentration of the metal sulfide than the light-emitting layers 12, 14, and 16.

[0109] The deactivation layer 13D is laminated with the deactivation layer 15D and the deactivation layer 17D so as to cover the entire upper surface of the bank 2. Thereby, leakage of current from a portion of the lower functional layer 3 corresponding to the end portion of the upper surface of the bank 2 where leakage is likely to occur due to a thinner film thickness can be more reliably suppressed.

[0110] (Fifth Embodiment) Figure 54 This is a cross-sectional view showing the first color coating step of the manufacturing method of the light-emitting element according to the fifth embodiment. Figure 55 This is a cross-sectional view showing the upper layer CTL coating step of the manufacturing method of the above-described light-emitting element. Figure 56 This is a cross-sectional view showing the exposure step of the manufacturing method of the above-described light-emitting element. Figure 57 This is a cross-sectional view showing the peeling step of the third color of the manufacturing method of the above-described light-emitting element. The same reference numerals are given to the same components as those described above, and the detailed description thereof will not be repeated.

[0111] First, as Figure 54As shown, a first solution S1 containing a plurality of luminescent first quantum dots, a polar solvent, and a precursor of an inorganic matrix is coated on the lower functional layer 3. On the first resist portion R8, the first solution S1 is not coated due to the liquid-repellent action of the liquid-repellent portion L1.

[0112] Moreover, as Figure 55 shown, the upper functional layer 5R is coated on the first solution S1.

[0113] Next, as Figure 56 shown, through the mask M1, the portion of the coating film of the first solution S1 located above the dam 2 is made into a non-exposed portion, so that the first quantum dots contained in the non-exposed portion are inactivated in subsequent processes. The exposed portion becomes the first metal sulfide film Q1 containing a plurality of first quantum dots. In addition, this exposure process can also be performed before coating the functional layer 5R.

[0114] Then, by peeling off the first resist pattern P8 from the lower functional layer 3, a first light-emitting layer E4 including a light-emitting layer 12 corresponding to the exposed portion and an inactivated layer 13 corresponding to the non-exposed portion, and an upper functional layer 5R laminated on the first light-emitting layer E4 are formed.

[0115] Hereinafter, by performing the same process for the second color and the third color as well, as Figure 57 shown, a second light-emitting layer E5 including a light-emitting layer 14 corresponding to the exposed portion and an inactivated layer 15 corresponding to the non-exposed portion, and an upper functional layer 5G laminated on the second light-emitting layer E5, and a third light-emitting layer E6 including a light-emitting layer 16 corresponding to the exposed portion and an inactivated layer 17 corresponding to the non-exposed portion, and an upper functional layer 5B laminated on the third light-emitting layer E6 are formed.

[0116] In this way, after forming the first light-emitting layer E4, an upper functional layer 5R (first upper functional layer) in contact with the first light-emitting layer E4 is formed. Then, after forming the second light-emitting layer E5, an upper functional layer 5G (second upper functional layer) in contact with the second light-emitting layer E5 is formed.

[0117] As described above, by separately coating each of the upper functional layers 5R, 5G, and 5B, upper functional layers 5R, 5G, and 5B suitable for the respective light-emitting colors of the first light-emitting layer E4, the second light-emitting layer E5, and the third light-emitting layer E6 can be formed. Therefore, the light-emitting characteristics of the first light-emitting layer E4, the second light-emitting layer E5, and the third light-emitting layer E6 can be improved.

[0118] (Sixth Embodiment) Figure 58 It is a cross-sectional view of the light-emitting element 10E of the sixth embodiment. The same reference numerals are given to the same components as those described above, and the detailed description thereof will not be repeated.

[0119] The light-emitting element 10E includes: a light source 24 that irradiates ultraviolet light, a first color conversion layer C1 that converts the ultraviolet light irradiated from the light source 24 into red light, a second color conversion layer C2 that converts the ultraviolet light irradiated from the light source 24 into green light, and a third color conversion layer C3 that converts the ultraviolet light irradiated from the light source 24 into blue light.

[0120] The first color conversion layer C1 may be configured to convert blue light from the third color conversion layer C3 into red light. The second color conversion layer C2 may also be configured to convert blue light from the third color conversion layer C3 into green light.

[0121] The first color conversion layer C1 includes: a light-emitting layer 18 that does not overlap with the bank 2 in a plan view and has a continuous film of a metal sulfide containing a plurality of quantum dots; a deactivation layer 19 that overlaps with the bank 2 in a plan view, contains a plurality of quantum dots, and has a lower concentration of metal sulfide than the light-emitting layer 18. The second color conversion layer C2 includes: a light-emitting layer 20 that does not overlap with the bank 2 in a plan view and has a continuous film of a metal sulfide containing a plurality of quantum dots; a deactivation layer 21 that overlaps with the bank 2 in a plan view, contains a plurality of quantum dots, and has a lower concentration of metal sulfide than the light-emitting layer 20. The third color conversion layer C3 includes: a light-emitting layer 22 that does not overlap with the bank 2 in a plan view and has a continuous film of a metal sulfide containing a plurality of quantum dots; a deactivation layer 23 that overlaps with the bank 2 in a plan view, contains a plurality of quantum dots, and has a lower concentration of metal sulfide than the light-emitting layer 22.

[0122] The base substrate 1E includes a substrate 4 and a bank 2 formed on the substrate 4.

[0123] Thus, the first color conversion layer C1, the second color conversion layer C2, and the third color conversion layer C3 receive ultraviolet light or blue light and generate photoluminescence (PL) in the visible light region.

[0124] (Seventh Embodiment) Figure 59 It is a plan view of the light-emitting element 10F of the seventh embodiment. The same reference numerals are assigned to the same components as those described above, and the detailed description thereof will not be repeated.

[0125] The light-emitting element 10F includes: a first light-emitting layer E1 that remains as a part of the first metal sulfide film Q1 after removing the first resist portion R1, a second light-emitting layer E2 that remains as a part of the second metal sulfide film Q2 after removing the second resist portion R2, and a third light-emitting layer E3 that remains as a part of the third metal sulfide film Q3 after removing the third resist portion R3.

[0126] The first light-emitting layer E1 includes mutually separated sub-pixel portions 25 (the first portion) and sub-pixel portion 26 (the second portion). The second light-emitting layer E2 includes mutually separated sub-pixel portions 27 (the third portion) and sub-pixel portion 28 (the fourth portion). The third light-emitting layer E3 includes mutually separated sub-pixel portions 29 and sub-pixel portion 30. The sub-pixel portions 25, 27, and 29 are adjacent in the X direction. The sub-pixel portions 25 and 26 are adjacent in the Y direction.

[0127] In the sub-pixel portions 25, 26 of the first light-emitting layer E1, the sub-pixel portions 27, 28 of the second light-emitting layer E2, and the sub-pixel portions 29, 30 of the third light-emitting layer E3, respective edge portions are thicker than portions inside the edge portions.

[0128] The base substrate 1 includes a bank 2 covering the first electrodes 11A, 11B and their edges. The sub-pixel portion 25 of the first light-emitting layer E1 overlaps the first electrode 11A in a top view. The sub-pixel portion 26 of the first light-emitting layer E1 overlaps the first electrode 11B in a top view.

[0129] In the light-emitting element 10F, the sub-pixel portions 25, 26, 27, 28, 29, 30 are formed such that their respective edges extend to the upper surface of the bank 2, but are formed in isolation from each other, and the respective edges are formed so as not to overlap each other.

[0130] Figure 60 It is a top view of a light-emitting element 10G which is a modification of the seventh embodiment. The same reference numerals are given to the same components as the above-described components, and the detailed description thereof will not be repeated.

[0131] The light-emitting element 10G includes a first light-emitting layer E1, a second light-emitting layer E2, and a third light-emitting layer E3. The first light-emitting layer E1 includes a sub-pixel portion 25 and a sub-pixel portion 26. The second light-emitting layer E2 includes a sub-pixel portion 27 and a sub-pixel portion 28. The third light-emitting layer E3 includes a sub-pixel portion 29 and a sub-pixel portion 30.

[0132] The sub-pixel portion 25 and the sub-pixel portion 26 may be formed to be connected on the upper surface of the bank 2, the sub-pixel portion 27 and the sub-pixel portion 28 may be formed to be connected on the upper surface of the bank 2, and the sub-pixel portion 29 and the sub-pixel portion 30 may also be formed to be connected on the upper surface of the bank 2.

[0133] The sub-pixel portion 25 and the sub-pixel portion 27 may be formed to overlap on the upper surface of the bank 2, the sub-pixel portion 27 and the sub-pixel portion 29 may be formed to overlap on the upper surface of the bank 2, the sub-pixel portion 26 and the sub-pixel portion 28 may be formed to overlap on the upper surface of the bank 2, and the sub-pixel portion 28 and the sub-pixel portion 30 may be formed to overlap on the upper surface of the bank 2.

[0134] Figure 61It is a top view of the light-emitting element 10H which is another modified example of the seventh embodiment. The same reference numerals are assigned to the same components as those described above, and the detailed description thereof will not be repeated.

[0135] The light-emitting element 10H includes: a first light-emitting layer E1 which remains after removing the first resist portion R1 and is part of the first metal sulfide film Q1 and extends over a plurality of sub-pixels of the same color; a second light-emitting layer E2 which remains after removing the second resist portion R2 and is part of the second metal sulfide film Q2 and extends over a plurality of sub-pixels of the same color; and a third light-emitting layer E3 which remains after removing the third resist portion R3 and is part of the third metal sulfide film Q3 and extends over a plurality of sub-pixels of the same color.

[0136] The base substrate 1 includes a first electrode 11A and a second electrode 11B, and a bank 2 covering the edges thereof. The first light-emitting layer E1 overlaps with the first electrode 11A and the second electrode 11B in a top view.

[0137] The first light-emitting layer E1, the second light-emitting layer E2, and the third light-emitting layer E3 are formed such that their respective edges extend to the upper surface of the bank 2, are formed in isolation from each other, and are formed such that their respective edges do not overlap each other.

[0138] Figure 62 It is a top view of the light-emitting element 101 which is another modified example. The same reference numerals are assigned to the same components as those described above, and the detailed description thereof will not be repeated.

[0139] The light-emitting element 101 includes a first light-emitting layer E1, a second light-emitting layer E2, and a third light-emitting layer E3. The first light-emitting layer E1 and the second light-emitting layer E2 may be formed to overlap on the upper surface of the bank 2. The second light-emitting layer E2 and the third light-emitting layer E3 may be formed to overlap on the upper surface of the bank 2.

[0140] Figure 63 It is a top view showing the first color formation process of the manufacturing method of the light-emitting element of the seventh embodiment. Figure 64 It is a top view showing the second color formation process of the manufacturing method of the above-described light-emitting element. Figure 65 It is a top view showing the third color formation process of the manufacturing method of the above-described light-emitting element. Figure 66 It is a top view of the light-emitting element manufactured by the manufacturing method of the above-described light-emitting element. The same reference numerals are assigned to the same components as those described above, and the detailed description thereof will not be repeated.

[0141] First, as Figure 63As shown, a first light-emitting layer E1 is formed in such a manner as to include sub-pixel regions D1 and D2 corresponding to a first color, and not to include sub-pixel regions D3 and D4 corresponding to a second color and sub-pixel regions D5 and D6 corresponding to a third color. The regions where the first light-emitting layer E1 is not formed include the region corresponding to sub-pixel region D3, the region corresponding to sub-pixel region D4, the region corresponding to sub-pixel region D5, and the region corresponding to sub-pixel region D6. These four regions are not continuous but are formed in isolation from each other.

[0142] Then, as Figure 64 shown, a second light-emitting layer E2 is formed in such a manner as to include sub-pixel regions D3 and D4 corresponding to the second color, and not to include sub-pixel regions D1 and D2 corresponding to the first color and sub-pixel regions D5 and D6 corresponding to the third color. The regions where the second light-emitting layer E2 is not formed include the region corresponding to sub-pixel region D1, the region corresponding to sub-pixel region D2, the region corresponding to sub-pixel region D5, and the region corresponding to sub-pixel region D6. These four regions are not continuous but are formed in isolation from each other.

[0143] Next, as Figure 65 shown, a third light-emitting layer E3 is formed in such a manner as to include sub-pixel regions D5 and D6 corresponding to the third color, and not to include sub-pixel regions D1 and D2 corresponding to the first color and sub-pixel regions D3 and D4 corresponding to the second color. The regions where the third light-emitting layer E3 is not formed include the region corresponding to sub-pixel region D1, the region corresponding to sub-pixel region D2, the region corresponding to sub-pixel region D3, and the region corresponding to sub-pixel region D4. These four regions are not continuous but are formed in isolation from each other.

[0144] In this way, as Figure 66 shown, only the first light-emitting layer E1 is coated in sub-pixel regions D1 and D2, and the second light-emitting layer E2 and the third light-emitting layer E3 are not coated. Also, only the second light-emitting layer E2 is coated in sub-pixel regions D3 and D4, and the first light-emitting layer E1 and the third light-emitting layer E3 are not coated. Further, only the third light-emitting layer E3 is coated in sub-pixel regions D5 and D6, and the first light-emitting layer E1 and the second light-emitting layer E2 are not coated.

[0145] Moreover, in the stacked region D7 outside sub-pixel regions D1 to D6, the first light-emitting layer E1, the second light-emitting layer E2, and the third light-emitting layer E3 are stacked and coated.

[0146] Figure 67 is a top view showing the first color formation process of a manufacturing method of another light-emitting element according to the seventh embodiment. Figure 68 is a top view showing the second color formation process of the manufacturing method of the above-mentioned another light-emitting element. Figure 69It is a top view showing the third color formation process of the manufacturing method of the above-described another light-emitting element. The same reference numerals are given to the same components as the above-described components, and the detailed description thereof will not be repeated.

[0147] First, as Figure 67 shown, a first light-emitting layer E1 is formed in such a manner as to include sub-pixel regions D1 and D2 corresponding to the first color and not to include sub-pixel regions D3 and D4 corresponding to the second color and sub-pixel regions D5 and D6 corresponding to the third color. The regions where the first light-emitting layer E1 is not formed include the region corresponding to the sub-pixel region D3, the region corresponding to the sub-pixel region D4, the region corresponding to the sub-pixel region D5, and the region corresponding to the sub-pixel region D6. As Figure 67 shown, these four regions are formed continuously.

[0148] Then, as Figure 68 shown, a second light-emitting layer E2 is formed in such a manner as to include sub-pixel regions D3 and D4 corresponding to the second color and not to include sub-pixel regions D1 and D2 corresponding to the first color and sub-pixel regions D5 and D6 corresponding to the third color. The regions where the second light-emitting layer E2 is not formed include the region corresponding to the sub-pixel region D1, the region corresponding to the sub-pixel region D2, the region corresponding to the sub-pixel region D5, and the region corresponding to the sub-pixel region D6. As Figure 68 shown, the region of the sub-pixel region D1 and the region of the sub-pixel region D2 are formed continuously. The region of the sub-pixel region D5 and the region of the sub-pixel region D6 are formed continuously.

[0149] Next, as Figure 69 shown, a third light-emitting layer E3 is formed in such a manner as to include sub-pixel regions D5 and D6 corresponding to the third color and not to include sub-pixel regions D1 and D2 corresponding to the first color and sub-pixel regions D3 and D4 corresponding to the second color. The regions where the third light-emitting layer E3 is not formed include the region corresponding to the sub-pixel region D1, the region corresponding to the sub-pixel region D2, the region corresponding to the sub-pixel region D3, and the region corresponding to the sub-pixel region D4. As Figure 69 shown, these four regions are formed continuously.

[0150] Moreover, in the stacking region D8 outside the sub-pixel regions D1 to D6, the first light-emitting layer E1, the second light-emitting layer E2, and the third light-emitting layer E3 are stacked and coated.

[0151] By Figures 63 - 65 the process, the stacking region D7 of the light-emitting element manufactured is larger than that by Figures 67 - 69The stacked region D8 of the light-emitting element manufactured by the process is wide. In addition, the stacked region D7 is formed continuously, whereas the stacked region D8 is formed separately. Therefore, compared with the light-emitting element having the stacked region D8, the light-emitting element having the stacked region D7 is less likely to have peeling of the first light-emitting layer E1, the second light-emitting layer E2, and the third light-emitting layer E3.

[0152] In addition, in the light-emitting element having the stacked region D7, since the first to third light-emitting layers E1 to E3 are stacked between sub-pixels, the resistance between sub-pixels becomes high. Therefore, compared with the light-emitting element having the stacked region D8, the light-emitting element having the stacked region D7 can suppress leakage between sub-pixels.

[0153] Figure 70 It is a top view of the light-emitting element 10J which is another modified example of the seventh embodiment. The same reference numerals are given to the same components as the above-described components, and the detailed description thereof will not be repeated.

[0154] The light-emitting element 10J includes a first light-emitting layer E1 that remains as a part of the first metal sulfide film Q1 after removing the first resist portion R1, a second light-emitting layer E2 that remains as a part of the second metal sulfide film Q2 after removing the second resist portion R2, and a third light-emitting layer E3 that remains as a part of the third metal sulfide film Q3 after removing the third resist portion R3.

[0155] The first light-emitting layer E1 includes a sub-pixel portion 25 (first portion) and a sub-pixel portion 26 (second portion) that are separated from each other. The second light-emitting layer E2 includes a sub-pixel portion 27 (third portion) and a sub-pixel portion 28 (fourth portion) that are separated from each other. The third light-emitting layer E3 includes a sub-pixel portion 29 and a sub-pixel portion 30 that are separated from each other. The sub-pixel portion 25, the sub-pixel portion 27, and the sub-pixel portion 29 are adjacent in the X direction. The sub-pixel portion 25 and the sub-pixel portion 26 are adjacent along an inclined direction with respect to the X direction.

[0156] The display device of the present embodiment includes the light-emitting element of any one of the first to seventh embodiments.

[0157] The present disclosure is not limited to the above-described embodiments, and various modifications can be made within the scope shown in the claims. Embodiments obtained by appropriately combining technical solutions separately disclosed in different embodiments are also included in the technical scope of the present disclosure. Moreover, by combining the technical means separately disclosed in each embodiment, new technical features can be formed. Reference numeral description

[0158] 1: Substrate substrate; 2: Bank; 3: Lower functional layer; 4: Substrate; 10: Light-emitting element; 11: Lower electrode; 12, 14, 16: Light-emitting layer (first inorganic dielectric layer); 13, 15, 17: Deactivation layer (second inorganic dielectric layer); P1: First resist pattern; P2: Second resist pattern; P3: Third resist pattern; R1: First resist portion; R2: Second resist portion; R3: Third resist portion; H1: First opening; H2: Second opening; H3: Third opening; S1: First solution; S2: Second solution; S3: Third solution; Q1: First metal sulfide film; Q2: Second metal sulfide film; Q3: Third metal sulfide film; E1: First light-emitting layer; E2: Second light-emitting layer; E3: Third light-emitting layer; L1: Liquid-repellent portion; L2: Liquid-repellent portion; L3: Liquid-repellent portion; L4: Liquid-repellent portion; C1: First color conversion layer (first light-emitting layer); C2: Second color conversion layer; C3: Third color conversion layer.

Claims

1. A method for manufacturing a light-emitting element, characterized in that, comprising: a step of preparing a substrate; a step of forming a first resist pattern on the substrate, the first resist pattern including a first resist portion made of a material resistant to a specific solvent and a first opening; a step of coating a first solution on the first resist pattern, the first solution containing a plurality of luminescent first quantum dots, the specific solvent, and a precursor of an inorganic medium; and a step of removing the first resist portion and leaving at least a part of a first inorganic medium layer formed by coating the first solution as a first light-emitting layer.

2. The method for manufacturing a light-emitting element according to claim 1, characterized in that, between the coating step and the leaving step, there is further included a step of exposing a coating film of the first solution to make an exposed portion become the first inorganic medium layer containing a plurality of first quantum dots.

3. The method for manufacturing a light-emitting element according to claim 1 or 2, characterized in that, by removing the first resist portion, a portion of the first inorganic medium layer located on the first resist portion is removed, and other portions are left as the first light-emitting layer.

4. The method for manufacturing a light-emitting element according to any one of claims 1 to 3, characterized in that, the specific solvent is a polar solvent.

5. The method for manufacturing a light-emitting element according to any one of claims 1 to 3, characterized in that, the specific solvent is a low-polarity solvent.

6. The method for manufacturing a light-emitting element according to any one of claims 1 to 5, characterized in that, the substrate includes a barrier, a part of the first light-emitting layer is located above the barrier.

7. The method for manufacturing a light-emitting element according to any one of claims 1 to 5, characterized in that, the substrate includes a barrier, by making a portion of the coating film of the first solution located above the barrier as a non-exposed portion, the first quantum dots contained in the non-exposed portion are inactivated.

8. The method for manufacturing a light-emitting element according to claim 1, characterized in that, by imparting liquid repellency to the upper surface of the first resist portion, a coating film of the first solution is not formed on the upper surface of the first resist portion.

9. The method for manufacturing a light-emitting element according to any one of claims 1 to 5, characterized in that, after forming the first light-emitting layer, a step of forming a second resist pattern, the second resist pattern including a second resist portion made of a material resistant to the specific solvent and a second opening overlapping at least a part of an area where the first light-emitting layer is not formed; a step of coating a second solution on the second resist pattern, the second solution containing a plurality of luminescent second quantum dots, the specific solvent, and a precursor of an inorganic medium; a step of exposing a coating film of the second solution to make an exposed portion become a second inorganic medium layer containing a plurality of second quantum dots; including a step of removing the second resist portion and leaving at least a part of the second inorganic medium layer as a second light-emitting layer.

10. The method for manufacturing a light-emitting element according to claim 9, characterized in that, The base substrate includes a bank and a lower functional layer covering the bank. The first light-emitting layer and the second light-emitting layer overlap above the bank.

11. The method for manufacturing a light-emitting element according to claim 9, characterized in that, The base substrate includes a bank and a lower functional layer covering the bank. Above the bank, a first deactivation layer containing deactivated first quantum dots and a second deactivation layer containing deactivated second quantum dots overlap.

12. The method for manufacturing a light-emitting element according to claim 9, characterized in that, After forming the first light-emitting layer, a first upper functional layer in contact with the first light-emitting layer is formed. After forming the second light-emitting layer, a second upper functional layer in contact with the second light-emitting layer is formed.

13. The method for manufacturing a light-emitting element according to claim 9, characterized in that, After forming the second light-emitting layer, a step of forming a third resist pattern, the third resist pattern including a third resist portion made of a material resistant to the specific solvent and a third opening portion overlapping at least a part of the region where the first light-emitting layer and the second light-emitting layer are not formed; a step of coating a third solution on the third resist pattern, the third solution containing a plurality of luminescent third quantum dots, the specific solvent, and a precursor of an inorganic medium; a step of exposing the coating of the third solution to make the exposed portion into a third inorganic medium layer containing a plurality of third quantum dots; and a step of removing the third resist portion and leaving at least a part of the third inorganic medium layer as a third light-emitting layer.

14. The method for manufacturing a light-emitting element according to any one of claims 1 to 5, characterized in that, In the first light-emitting layer, the edge portion is thicker than the portion inside the edge portion.

15. The method for manufacturing a light-emitting element according to any one of claims 1 to 5, characterized in that, The base substrate includes a first electrode and a bank covering its edge, The first light-emitting layer overlaps the first electrode in a top view.

16. The method for manufacturing a light-emitting element according to claim 14, characterized in that, The base substrate includes a first electrode, a second electrode, and a bank covering their edges, The first light-emitting layer overlaps the first electrode and the second electrode in a top view.

17. The method for manufacturing a light-emitting element according to claim 9, characterized in that, The first quantum dots and the second quantum dots emit different colors.

18. The method for manufacturing a light-emitting element according to claim 17, characterized in that, The first light-emitting layer includes a separated first part and a second part, The second light-emitting layer includes a separated third part and a fourth part, The first part and the third part are adjacent in a first direction, and the first part and the second part are adjacent in a direction orthogonal to the first direction.

19. The method for manufacturing a light-emitting element according to claim 17, characterized in that, The first light-emitting layer includes a separated first part and a second part, The second light-emitting layer includes a separated third part and a fourth part, The first part and the third part are adjacent in a first direction, and the first part and the second part are adjacent in a direction inclined with respect to the first direction.

20. The method for manufacturing a light-emitting element according to any one of claims 1 to 19, wherein, the inorganic medium is a metal sulfide.

21. The method for manufacturing a light-emitting element according to claim 20, wherein, the metal sulfide is zinc sulfide.

22. The method for manufacturing a light-emitting element according to claim 21, wherein, the precursor is zinc dithiocarboxylate.

23. The method for manufacturing a light-emitting element according to any one of claims 1 to 22, wherein, the first resist portion contains a PVA-PVP graft copolymer.

24. The method for manufacturing a light-emitting element according to claim 5, wherein, the low-polarity solvent contains toluene.

25. The method for manufacturing a light-emitting element according to any one of claims 1 to 24, wherein, the first opening portion has an inverted conical shape that narrows upward.

26. The method for manufacturing a light-emitting element according to any one of claims 1 to 25, wherein, the first resist portion is removed by a stripping solution added with a surfactant.

27. The method for manufacturing a light-emitting element according to any one of claims 1 to 26, wherein, the first resist portion has an OH group.

28. The method for manufacturing a light-emitting element according to any one of claims 1 to 27, wherein, the first inorganic dielectric layer is a continuous film having an area of 1000 nm2 or more in a plane direction intersecting the thickness direction of the substrate.

29. The method for manufacturing a light-emitting element according to any one of claims 1 to 28, wherein, it includes a step of forming an upper electrode located above the first light-emitting layer, and the first light-emitting layer generates electroluminescence in the visible light region by an applied voltage between the substrate and the upper electrode.

30. The method for manufacturing a light-emitting element according to any one of claims 1 to 28, wherein, the first light-emitting layer receives ultraviolet light or blue light to generate photoluminescence in the visible light region.

31. A light-emitting element, wherein, it includes: a lower electrode; a bank that covers an edge of the lower electrode; a first inorganic dielectric layer that does not overlap with the bank in a plan view and has a continuous film of an inorganic medium containing a plurality of quantum dots; and a second inorganic dielectric layer that overlaps with the bank in a plan view, contains a plurality of quantum dots, and has a lower concentration of the inorganic medium than the first inorganic dielectric layer.

32. The light-emitting element according to claim 31, wherein, the first inorganic dielectric layer is a light-emitting layer containing the plurality of luminescent quantum dots, and the second inorganic dielectric layer is a quenching layer containing a plurality of deactivated quantum dots.

33. The light-emitting element according to claim 32, wherein, the light-emitting layer and the quenching layer are connected.

34. The light-emitting element according to claim 33, wherein, a part of the light-emitting layer and the quenching layer are laminated.

35. A display device, characterized in that, it includes a light-emitting element according to any one of claims 31 to 34.

Images