Display panel, manufacturing method thereof and display device

Abstract

Embodiments of the present application provide a display panel, a manufacturing method thereof and a display device. The display panel comprises a driving substrate and a light emitting element. The driving substrate comprises a first film layer, and the first film layer is provided with an opening. The light emitting element is located on the driving substrate, and the light emitting element comprises a main body and an electrode. The electrode of the light emitting element comprises a first part located in the opening, so as to improve the reflectivity problem of the display panel.

Description

[0001] This application is a divisional application of the patent filed on July 18, 2022, with application number 202210843228.1 and invention title: Display panel and its manufacturing method and display device. Technical Field

[0002] This application relates to the field of display technology, and more specifically, to display panels, methods of manufacturing the same, and display devices. Background Technology

[0003] Light Emitting Diodes (LEDs) have advantages such as fast response speed, high brightness and long lifespan, and there are many application needs. LED display panels have always been a research hotspot.

[0004] The light-emitting diode display panel is manufactured by transferring the light-emitting diodes onto the target substrate and bonding them to the target substrate.

[0005] Currently, LED display panels have a high reflectivity issue that urgently needs to be addressed. Summary of the Invention

[0006] In view of this, embodiments of the present invention provide a display panel, a method for manufacturing the same, and a display device to solve the problem of high reflectivity of the display panel.

[0007] This invention provides a display panel including a driving substrate and a light-emitting element. The driving substrate includes a first film layer with an opening. The light-emitting element is located on the driving substrate and includes a main body and an electrode. The electrode includes a first portion located at the opening.

[0008] The method for manufacturing a display panel provided in this embodiment of the invention includes the following steps:

[0009] A first film layer is formed on the driving substrate, and the first film layer has an opening;

[0010] A photoresist layer is formed, and the photoresist layer is located on one side of the first film layer;

[0011] A photoresist pattern is formed, and the photoresist pattern has through holes, with the through holes and openings overlapping.

[0012] An electrode layer is formed, the electrode layer including a first electrode portion and a second electrode portion, the first electrode portion being covered with a photoresist pattern, and the second electrode portion including a portion located within an opening;

[0013] Remove the photoresist pattern and the first electrode portion;

[0014] A light-emitting element is provided, and the light-emitting element is transferred to a driving substrate, wherein the light-emitting element includes a main body and a bonding electrode;

[0015] The light-emitting element is bonded to the second electrode portion, so that the bonding electrode and the second electrode portion form the electrode of the light-emitting element.

[0016] This invention provides a display device, including a display panel provided in any embodiment of this invention.

[0017] Compared with the prior art, the display panel, its manufacturing method, and display device provided in the embodiments of the present invention have at least the following beneficial technical effects:

[0018] By placing at least a portion of the electrodes of the light-emitting element within the opening of the first film layer, the metal interconnect electrodes in the related technology can be eliminated, reducing the reflectivity of the display panel and improving the display effect of the display panel. Attached Figure Description

[0019] Figure 1 A top view of the display panel provided in an embodiment of the present invention;

[0020] Figure 2 for Figure 1 A magnified schematic diagram of a portion of the display area;

[0021] Figure 3 For along Figure 2 A schematic cross-sectional view of the centerline AA';

[0022] Figure 4 for Figure 3 An enlarged schematic diagram of a part of the image;

[0023] Figure 5 for Figure 3 Another enlarged schematic diagram of a part of it;

[0024] Figure 6 A flowchart illustrating a method for manufacturing a display panel according to an embodiment of the present invention;

[0025] Figure 7 A partial top view of the driving substrate provided in an embodiment of the present invention;

[0026] Figure 8 For along Figure 7 A schematic cross-sectional view of the centerline BB';

[0027] Figure 9 For along Figure 7 Another cross-sectional view of the centerline BB';

[0028] Figure 10 This is a partial top view after a photoresist layer has been formed on the driving substrate;

[0029] Figure 11 For along Figure 10A cross-sectional view of the centerline CC';

[0030] Figure 12 This is a schematic diagram of a structure for patterning a photoresist layer;

[0031] Figure 13 This is a schematic diagram of the structure after the electrode layer is formed;

[0032] Figure 14 for Figure 13 Comparison chart;

[0033] Figure 15 A schematic diagram of the structure after removing the photoresist pattern;

[0034] Figure 16 This is a schematic diagram of a transfer light-emitting element;

[0035] Figure 17 This is a schematic diagram of the bonding process between the light-emitting element and the driving substrate;

[0036] Figure 18 This is another schematic diagram of the transfer light-emitting element;

[0037] Figure 19 For along Figure 2 Another cross-sectional view of the centerline AA';

[0038] Figure 20 This is a schematic diagram of another structure for patterning photoresist layers;

[0039] Figure 21 This is a partial top view of the first organic layer;

[0040] Figure 22 For along Figure 2 Another cross-sectional view of line AA' in the diagram;

[0041] Figure 23 For along Figure 2 Another cross-sectional view of line AA';

[0042] Figure 24 A schematic diagram illustrating the process of forming the first film layer, forming the electrode layer, and removing part of the electrode.

[0043] Figure 25 For along Figure 2 Another cross-sectional view of the centerline AA';

[0044] Figure 26 This is a schematic diagram of the structure of the first film layer provided in an embodiment of the present invention;

[0045] Figure 27 For along Figure 2 Another cross-sectional view of the centerline AA';

[0046] Figure 28 and Figure 29 They are respectively Figure 1 Another enlarged schematic diagram of a portion of the display area;

[0047] Figure 30 and Figure 31 They are respectively Figure 28 and Figure 29 An enlarged schematic diagram of region A1 in the diagram;

[0048] Figure 32 and Figure 33 They are respectively Figure 28 and Figure 29 An enlarged schematic diagram of region A2 in the image;

[0049] Figure 34 and Figure 35 They are respectively Figure 28 and Figure 29 An enlarged view of region A3 in the diagram;

[0050] Figures 36-39 respectively along Figure 28 and Figure 29 A cross-sectional schematic diagram of line DD' in the diagram;

[0051] Figure 40 For along Figure 29 A schematic cross-sectional view of line EE' in the diagram;

[0052] Figures 41-43 respectively along Figure 28 and Figure 29 A cross-sectional schematic diagram of line DD' in the diagram;

[0053] Figure 44 for Figure 29 An enlarged schematic diagram of region A4 in the image;

[0054] Figure 45 This is a schematic diagram of a display device provided in an embodiment of the present invention. Detailed Implementation

[0055] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0056] For portions of the drawings that share the same reference numerals, please refer to the corresponding text descriptions of the drawings.

[0057] Figure 1 This is a top view of a display panel provided in an embodiment of the present invention. Figure 1 As shown, the display panel 100 includes a display area AA, and multiple pixels P are disposed in the display area AA and arranged in a regular manner. The multiple pixels P are used to display the screen.

[0058] Figure 2 for Figure 1 A magnified schematic diagram of a portion of the display area. Figure 3 For along Figure 2 A schematic cross-sectional view of the centerline AA'. (Example) Figure 2 and Figure 3 As shown, the display panel includes a driving substrate 200 and a light-emitting element 300.

[0059] The driving substrate 200 may include a substrate 210 and a driving circuit layer 220, with the driving circuit layer 220 located on the substrate 210.

[0060] Substrate 210 may be an insulating substrate. As an example, substrate 210 may include materials such as glass, quartz, and polymeric resins. Here, polymeric materials may include polyethersulfone (PES), polyacrylate (PA), polyarylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallylate, polyimide (PI), polycarbonate (PC), cellulose triacetate (CAT), cellulose acetate propionate (CAP), or combinations thereof. As another example, substrate 210 may be a flexible substrate comprising polyimide (PI).

[0061] The driving circuit layer 220 may include structures such as thin-film transistors (TFTs), capacitors (C), and traces (L).

[0062] As an example, the film layers of the driving circuit layer 220 may include a buffer layer 221, an active pattern 222, a gate insulating layer 223, a gate 224, an intermediate dielectric layer 225, an interlayer dielectric layer 226, a source 227s, a drain 227d, and a passivation layer 228.

[0063] The buffer layer 221 prevents impurities such as oxygen and moisture from penetrating from the substrate 210 and can planarize the substrate 210. Furthermore, the buffer layer 221 can control the heat transfer rate during the annealing process used to form the active pattern 222. The buffer layer 221 may comprise a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

[0064] An active pattern 222 may be disposed on a buffer layer 221. The active pattern 222 may include a channel region 222c and source regions 222s and drain regions 222d located at opposite ends of the channel region 222c. Taking an active pattern 222 comprising a polysilicon semiconductor as an example, the channel region 222c comprises an undoped polysilicon semiconductor, and the source regions 222s and drain regions 222d may comprise doped polysilicon semiconductors. The active pattern 222 may be an n-type semiconductor or a p-type semiconductor. As an example, the impurities doped in the source regions 222s and drain regions 222d may be n-type impurities; for example, materials such as phosphorus (P) ions may be used as n-type impurities. As an example, the impurities doped in the source regions 222s and drain regions 222d may be p-type impurities; for example, materials such as boron (B) ions may be used as p-type impurities.

[0065] The active pattern 222 may include silicon semiconductor or oxide semiconductor.

[0066] Silicon semiconductors may include one or more of amorphous silicon, monocrystalline silicon, and polycrystalline silicon. As an example, active pattern 222 may include low-temperature polycrystalline silicon.

[0067] Oxide semiconductors may include indium (In), zinc (Zn), gallium (Ga), tin (Sn), titanium (Ti), aluminum (Al), hafnium (Hf), zirconium (Zr), magnesium (Mg), etc. Active patterns 212 may include binary, ternary, or quaternary compounds; for example, active patterns 212 may include indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), gallium zinc oxide (GaZnxOy), indium zinc oxide (IZO), zinc magnesium oxide (ZnMgxOy), zinc oxide (ZnOx), gallium oxide (GaOx), tin oxide (SnOx), indium oxide (InOx), indium gallium hafnium oxide (IGHO), tin aluminum zinc oxide (TAZO), indium gallium tin oxide (IGTO), etc. These can be used individually or in combination with each other. In exemplary embodiments of this disclosure, the oxide semiconductor described above may be doped with lithium (Li), sodium (Na), manganese (Mn), nickel (Ni), palladium (Pd), copper (Cu), carbon (C), nitrogen (N), phosphorus (P), titanium (Ti), zirconium (Zr), vanadium (V), ruthenium (Ru), germanium (Ge), tin (Sn), fluorine (F), etc.

[0068] The gate insulating layer 223 covers the active pattern 222 and may be disposed on the buffer layer 221. The gate insulating layer 223 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

[0069] Gate 224 may be disposed on gate insulating layer 223 and may overlap with channel region 222c of active pattern 222. Gate 224 and active pattern 222 may form thin-film transistor (TFT). Gate 224 may include metals such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), their alloys, their nitrides, conductive metal oxides, transparent conductive materials, etc. As an example, gate 224 may include molybdenum (Mo).

[0070] An intermediate dielectric layer 225 covers the gate 224 and may be disposed on the gate insulating layer 223. The intermediate dielectric layer 225 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. As an example, the intermediate dielectric layer 225 may include silicon nitride.

[0071] The interlayer dielectric layer 226 can be disposed on the intermediate dielectric layer 225. The interlayer dielectric layer 226 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

[0072] The source electrode 227s can contact the source region 222s of the active pattern 222, and the drain electrode 227d can contact the drain region 222d of the active pattern 222. The source electrode 227s and the drain electrode 227d can be formed in the same process and are located in the same film layer. As an example, a first contact hole CH1 exposing a portion of the source region 222s and a second contact hole CH2 exposing a portion of the drain region 222d can each be formed through a gate insulating layer 223, an intermediate dielectric layer 225, and an interlayer dielectric layer 226. The source electrode 227s can contact the upper surface of the source region 222s through the first contact hole CH1, and the drain electrode 227d can contact the upper surface of the drain region 222d through the second contact hole CH2. The source electrode 227s and the drain electrode 227d can include metals such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), their alloys, their nitrides, conductive metal oxides, transparent conductive materials, etc. As an example, the source 227s and drain 227d may include a Ti / Ai / Ti metal stack structure.

[0073] Passivation layer 228 covers source 227s and drain 227d, and passivation layer 228 may be disposed on interlayer dielectric layer 226. Passivation layer 228 may comprise a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. As an example, passivation layer 228 may comprise silicon nitride.

[0074] The capacitor C may include a first electrode CP1 and a second electrode CP2, which can be used to maintain the node potential in the driving circuit. The first electrode CP1 may be located between the gate insulating layer 223 and the intermediate dielectric layer 225, and is located on the same film layer as the gate 224, and may be formed of the same material as the gate 224. The second electrode CP2 may be located between the intermediate dielectric layer 225 and the interlayer dielectric layer 226, and the second electrode CP2 may include metals such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), their alloys, their nitrides, conductive metal oxides, transparent conductive materials, etc. As an example, the second electrode CP2 may include molybdenum (Mo).

[0075] Trace L can be used to provide various signals. Figure 3 Taking the trace L located between the interlayer dielectric layer 226 and the passivation layer 228 as an example, the trace L can be located in the same film layer as the source electrode 227s and the drain electrode 227d, and can be made of the same material as the source electrode 227s and the drain electrode 227d. Depending on the type of signal transmitted by the trace L and the requirements, the trace L can be located in one or more other film layers. For example, the trace L can be located in the same film layer as the gate electrode 224, or the trace L can be located in the same film layer as the second electrode plate CP2, and so on.

[0076] The driving circuit layer 220 includes a driving circuit for driving the light-emitting element 300 to emit light. As an example, the driving circuit includes a pixel circuit that is electrically connected to the light-emitting element 300 and is used to drive the light-emitting element 300 to emit light.

[0077] Figure 4 for Figure 3 An enlarged schematic diagram of a part of the image. Figure 5 for Figure 3 Another enlarged schematic diagram of a part of it. Figure 4 and Figure 5 The diagram only shows a portion of the film layers in the driving substrate 200.

[0078] like Figures 3-5 As shown, the light-emitting element 300 can be a light-emitting diode, such as an inorganic light-emitting diode. The size of the light-emitting element 300 can be less than 200 micrometers. For example, the size of the light-emitting element 300 can be less than 100 micrometers, or less than 50 micrometers, etc.

[0079] The light-emitting element 300 may include a main body 310 and an electrode 320. The main body 310 may include an N-type semiconductor layer 311, a P-type semiconductor layer 312, and an active layer 313 located between the two.

[0080] The main body 310 of the light-emitting element 300 can be understood as the part of the light-emitting element 300 excluding the electrode 320.

[0081] The material of the main body 310 of the light-emitting element 300 may include, but is not limited to, compound semiconductors such as gallium nitride (GaN), aluminum indium gallium phosphide (AlInGaP), aluminum gallium arsenide (AlGaAs), or gallium arsenide phosphide (GaAsP).

[0082] Electrode 320 may include a first electrode 321 and a second electrode 322. The first electrode 321 is electrically connected to the P-type semiconductor layer 312, and the second electrode 322 is electrically connected to the N-type semiconductor layer 311. The first electrode 321 may be a positive electrode, and the second electrode 322 may be a negative electrode.

[0083] Electrode 320 may comprise an alloy or solid solution of metals such as gold (Au), tin (Sn), nickel (Ni), titanium (Ti), aluminum (Al), silver (Ag), and indium (In). As an example, electrode 320 comprises a gold-indium alloy.

[0084] The first electrode 321 and the second electrode 322 can both be located on the same side of the main body 310. For example, the first electrode 321 and the second electrode 322 are both located on the side of the N-type semiconductor layer 311 closest to the P-type semiconductor layer 312. In the film structure of the display panel, the first electrode 321 and the second electrode 322 can both be located on the side of the main body 310 facing the driving substrate 200. When transferring the light-emitting element 300 onto the driving substrate 200, it is convenient to realize the electrical connection between the light-emitting element 300 and the driving substrate 200 by thermoforming, such as by achieving bonding between the light-emitting element 300 and the driving substrate 200 through a eutectic bonding method.

[0085] The main body 310 may also include an insulating layer 314, which covers the N-type semiconductor layer 311, the P-type semiconductor layer 312 and the active layer 313 in the main body. The insulating layer 314 is provided with through holes to expose a portion of the N-type semiconductor layer 311 and a portion of the P-type semiconductor layer 312 respectively. At the through holes of the insulating layer 314, the first electrode 321 is electrically connected to the P-type semiconductor layer 312 and the second electrode 322 is electrically connected to the N-type semiconductor layer 311.

[0086] The main body 310 may also include a Bragg reflector layer, which may be located on the side of the P-type semiconductor layer 312 away from the N-type semiconductor layer 311, thereby improving the light emission efficiency of the light-emitting element 300 by reflecting light.

[0087] like Figure 5 As shown, the main body 310 of the light-emitting element 300 may also include a transparent electrode 315, which is located between the first electrode 321 and the P-type semiconductor layer 312. The transparent electrode 315 may be made of indium tin oxide (ITO) and can be used to adjust the current density distribution in different regions of the light-emitting element 300.

[0088] like Figure 5 As shown, micro-patterns can be provided on the upper surface of the light-emitting element 300. For example, a rough pattern can be provided on the upper surface of the N-type semiconductor layer 311, which is beneficial to improving the light extraction efficiency of the light-emitting element 300.

[0089] like Figure 3 As shown, the driving substrate 200 may further include a planarization layer 230. The planarization layer 230 may be located on the driving circuit layer 220, and can be used to form a planar surface on the driving circuit layer 220. As an example, the planarization layer 230 may be located on the passivation layer 228, and the side of the planarization layer 230 away from the passivation layer 228 has a substantially flat upper surface. The planarization layer 230 may include organic materials such as photoresist, polyacrylate resin, polyimide resin, polyamide resin, siloxane resin, acrylic resin, epoxy resin, etc.

[0090] The driving circuit layer 220 is fabricated using a film layer stacking method. The active patterns 222, gate 224, source 227s, and drain 227d constituting the thin-film transistor (TFT), as well as the capacitor C and trace L patterns in the driving circuit layer 220, make the upper surface of the driving circuit layer 220 uneven. Additionally, through-holes (such as the first contact hole CH1 and the second contact hole CH2) penetrating the film layers also contribute to the unevenness of the upper surface of the driving circuit layer 220. The upper surface of the driving circuit layer 220 can be the upper surface of the passivation layer 228. By providing a planarization layer 230, a flat surface can be provided for subsequently fabricated components.

[0091] Continue to refer to Figure 3 The driving substrate 200 may further include a connection portion 240. The connection portion 240 is disposed on the planarization layer 230 and includes a first connection portion 241 and a second connection portion 242. The first connection portion 241 is electrically connected to a thin-film transistor (TFT) in the driving circuit layer 220, and the second connection portion 242 is electrically connected to a power line. As an example, the first connection portion 241 may be electrically connected to the drain 227d of the TFT via a contact hole CH, wherein the contact hole CH penetrates the planarization layer 230 and the passivation layer 228, and exposes a portion of the drain 227d of the TFT. The connection portion 240 may include metals such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), their alloys, their nitrides, conductive metal oxides, transparent conductive materials, etc. As an example, the connection portion 240 may include a Ti / Ai / Ti metal stack structure. The material of the connection part 240 can be the same as the material of the source 227s and the drain 227d.

[0092] To make full use of the metal film layer, the metal film layer where the connecting part 240 is located may also include other metal components, such as power lines, signal lines, electrical shielding components, light-shielding components, etc.

[0093] like Figures 3-5 The driving substrate 200 also includes a first film layer 250, which has an opening OP.

[0094] The first film layer 250 of the driving substrate 200 is located on the side of the driving circuit layer 220 away from the substrate 210, that is, the driving circuit layer 220 is located between the first film layer 250 and the substrate 210.

[0095] The planarization layer 230 can be located between the first film layer 250 and the driving circuit layer 220.

[0096] The connecting portion 240 is located between the planarization layer 230 and the first film layer 250.

[0097] The opening OP of the first film layer 250 exposes the connection portion 240. The electrode 320 of the light-emitting element 300 includes a first portion 320a located in the opening OP. The electrode 320 of the light-emitting element 300 contacts and is electrically connected to the connection portion 240. Specifically, the first portion 320a of the electrode 320 of the light-emitting element 300 contacts and is electrically connected to the connection portion 240.

[0098] Electrode 320 can fill the opening OP of the first film layer 250. The first portion 320a of electrode 320 can fill the opening OP of the first film layer 250. Specifically, the lower surface 320b of electrode 320 contacts the connecting portion 240, and the side surface 320s of the first portion 320a of electrode 320 contacts the sidewall OPW of the opening OP of the first film layer 250. In this configuration, electrode 320 contacts not only the connecting portion 240 but also the first film layer 250, improving the weak adhesion between electrode 320 and the metal film layer, preventing the light-emitting element from easily detaching from the driving substrate 200 or having poor electrical contact with the driving substrate 200, thus improving the reliability of the display panel.

[0099] The upper surface of the connector 240 may be roughened to increase the adhesion between the connector 240 and the first portion 320a of the electrode 320.

[0100] The thickness of the first film layer 250 can be adjusted to regulate the contact area between the electrode 320 and the sidewall OPW of the opening OP of the first film layer 250. For example, increasing the thickness of the first film layer 250 increases the contact area between the electrode 320 and the first film layer 250, thereby improving the adhesion reliability between the light-emitting element 300 and the driving substrate 200.

[0101] The inclination of the sidewall OPW of the opening OP of the first film layer 250 can be adjusted to regulate the contact area between the electrode 320 and the sidewall OPW of the opening OP of the first film layer 250. For example, in the direction from the substrate 210 to the light-emitting element 300, the sidewall OPW of the opening OP is tilted away from the inside of the opening, which can increase the distance of the sidewall OPW away from the center of the opening, thereby increasing the contact area between the electrode 320 and the first film layer 250 and improving the adhesion reliability between the light-emitting element 300 and the driving substrate 200.

[0102] The electrode 320 may also include a second portion 320c located between the first portion 320a and the main body portion 310 of the light-emitting element 300.

[0103] Figure 4 and Figure 5 The diagram illustrates the first part 320a and the second part 320c of the first electrode 321. The first part 320a and the second part 320c of the second electrode 322 can be divided in the same way. That is, the second electrode 322 includes the first part 320a located at the opening OP of the first film layer 250 and the second part 320c located between the first part 320a and the main body 310 of the light-emitting element 300.

[0104] like Figures 3-5 As shown, the area of ​​the second part 320c can be greater than or equal to the area of ​​the first part 320a. The edge of the second part 320c that extends beyond the first part 320a can contact the upper surface of the first film layer 250, further increasing the contact area between the electrode 320 and the first film layer 250, and improving the adhesion reliability between the light-emitting element 300 and the driving substrate 200.

[0105] The sidewalls OPW of the opening OP of the first film layer 250 and the upper surface of the first film layer 250 can be roughened to increase the adhesion between the electrode 320 and the first film layer 250.

[0106] In related technologies, the electrodes of the light-emitting element are directly disposed on the metal interconnect electrode. One end of the metal interconnect electrode is connected to the underlying thin-film transistor (TFT) through a via in the film layer between the metal interconnect electrode and the TFT. The electrode of the light-emitting element is located at the other end of the metal interconnect electrode. To avoid the uneven surface caused by the via location affecting the bonding process of the light-emitting element, a certain distance needs to be maintained between the end of the metal interconnect electrode located at the via location and the end where the electrode of the light-emitting element is disposed. This results in a relatively long metal interconnect electrode, which increases the reflectivity of the display panel and affects the display effect.

[0107] In this application, by setting the electrode 320 of the light-emitting element 300 at the opening OP of the first film layer 250, the metal interconnect electrode is eliminated, the reflectivity of the display panel is reduced, and the display effect of the display panel is improved.

[0108] In an embodiment of the present invention, the shape of the opening OP of the first film layer 250 is exemplified by a rectangle. The shape of the opening OP of the first film layer 250 may also include other suitable shapes such as a circle.

[0109] like Figure 3 As shown, the first electrode 321 of the light-emitting element 300 is electrically connected to the first connection portion 241, and is also electrically connected to the drain 227d of the thin-film transistor TFT through the first connection portion 241. The first connection portion 241 is connected to the thin-film transistor TFT through a contact hole CH that penetrates the planarization layer 230 and the passivation layer 228. The portion of the first connection portion 241 located at the contact hole CH generally does not have a flat surface, while the portion of the first connection portion 241 exposed by the opening OP of the first film layer 250 needs to have a relatively flat surface to facilitate the bonding of the light-emitting element 300. In the direction perpendicular to the plane of the display panel 100, the contact hole CH may not overlap with the opening OP of the first film layer 250, thereby avoiding the influence of the contact hole CH on the flat portion of the first connection portion 241. The distance D between the portion of the first connection portion 241 located at the contact hole CH and the portion of the first connection portion 241 exposed by the opening OP can be set as needed.

[0110] Continue to refer to Figure 3 The second electrode 322 of the light-emitting element 300 is electrically connected to the second connection portion 242, and can be connected to the power line through the second connection portion 242.

[0111] Figure 6 A flowchart illustrating a method for manufacturing a display panel according to an embodiment of the present invention.

[0112] Combination Figures 6-17 The manufacturing method of the display panel provided in the embodiments of this application is described as follows:

[0113] S101: A first film layer 250 is formed on the driving substrate 200, and an opening OP is provided on the first film layer 250.

[0114] Figure 7 This is a partial top view of the driving substrate provided in an embodiment of the present invention. Figure 8 For along Figure 7 A schematic cross-sectional view of the centerline BB'. Figure 9 For along Figure 7 Another cross-sectional view of the centerline BB'. Wherein, Figure 8 and Figure 9Two examples of driving substrates are illustrated, and subsequent process steps are as follows: Figure 9 Taking the driving substrate as an example, it should be noted that the subsequent process steps also apply. Figure 8 The driving substrate shown.

[0115] like Figure 7 and Figure 8 As shown, the driving substrate 200 may include a substrate 210, a circuit layer 260, an insulating layer 270, a connection portion 240, and a first film layer 250.

[0116] The circuit layer 260 may be located on the substrate 210, and the circuit layer 260 may include multiple signal lines for transmitting drive signals. Figure 8 Taking a driver substrate 200 that includes a single circuit layer 260 as an example. In other embodiments, the circuit layer 250 may include multiple layers to meet the requirements for the number and location of signal lines.

[0117] Insulation layer 270 can cover circuit layer 260.

[0118] The connecting part 240 can be disposed on the insulating layer 270 and can be electrically connected to the circuit layer 260 through the contact hole CH disposed on the insulating layer 270.

[0119] The first film layer 250 is located on the upper side of the driving substrate 200. The first film layer 250 is provided with an opening OP, which exposes the connection portion 240. The opening OP can be used to receive a portion of the electrode layer that is subsequently formed.

[0120] like Figure 7 and Figure 9 As shown, the driving substrate 200 may include a substrate 210, a driving circuit layer 220, a planarization layer 230, and a first film layer 250. Figure 9 The driving substrate 200 in the middle can be referenced. Figure 3 The driving substrate 200 and its related descriptions are not repeated here.

[0121] The opening OP of the first film layer 250 can be used to receive portions of the subsequently formed electrode layer.

[0122] It should be noted that, in order to more clearly illustrate the structures closely related to each step, some reference numerals have been omitted in the relevant drawings for subsequent process steps. The omitted reference numerals can be referred to in other relevant drawings in this application.

[0123] S102: Form a photoresist layer 400, which is located on one side of the first film layer 250.

[0124] Figure 10 This is a partial top view after a photoresist layer has been formed on the driving substrate. Figure 11 For along Figure 10 A cross-sectional view of the centerline CC'.

[0125] like Figure 10 and Figure 11 As shown, the photoresist layer 400 can be entirely disposed on the upper surface of the driving substrate 200. Specifically, the photoresist layer 400 is disposed on the first film layer 250, the photoresist layer 400 is in contact with the first film layer 250, and fills the opening OP of the first film layer 250.

[0126] S103: Forming a photoresist pattern 410, the photoresist pattern 410 having a through hole 420, the through hole 420 overlapping with the opening OP.

[0127] Figure 12 This is a schematic diagram of a structure for patterning a photoresist layer.

[0128] like Figure 12 As shown, the photoresist layer 400 can be patterned by exposure and development to form a photoresist pattern 410.

[0129] Specifically, a mask can be placed above the photoresist layer 400, and light passes through the mask to selectively expose the photoresist layer 400, making the exposed area of ​​the photoresist layer 400 a soluble substance, or making the exposed area of ​​the photoresist layer 400 an insoluble substance. The soluble substance in the photoresist layer 400 is removed by development to form a photoresist pattern 410.

[0130] The photoresist layer 400 can be made of negative photoresist. The exposed areas of the photoresist layer 400 become insoluble substances and are left during the development process, while the unexposed areas of the photoresist layer 400 are removed.

[0131] Figure 12 The illustration uses the material of photoresist layer 400 as a negative photoresist. For example... Figure 12 As shown, the mask includes a light-transmitting area TA and a light-shielding area SA. The light-shielding area SA is directly opposite the opening OP of the first film layer 250 and is used to shield the opening OP area from light. The area of ​​the photoresist layer 400 that is directly opposite the light-transmitting area TA of the mask undergoes a photochemical reaction when exposed to light, becoming an insoluble substance. During the development process, the portion of the photoresist layer 400 that overlaps with the opening is removed, forming a photoresist pattern 410.

[0132] For the photoresist layer 400 using negative photoresist, during the exposure process, the exposure amount varies at different thickness locations along its thickness direction. The further away from the exposure source, the smaller the exposure amount. During development, the locations with insufficient exposure are also easily removed, thus forming inclined sidewalls in the photoresist pattern 410.

[0133] The photoresist pattern 410 has a through-hole 420, which overlaps with the opening. The photoresist pattern 410 includes a bottom surface 410b facing the first film layer 250 and a sidewall 410s located in the through-hole 420. The angle θ between the bottom surface 410b and the sidewall 410s of the photoresist pattern 410 is an obtuse angle.

[0134] like Figure 12 As shown, the light-shielding area SA of the mask can be the same size as the area where the opening OP is located. In other embodiments, the light-shielding area SA of the mask can be larger than the area where the opening OP is located, and the light-shielding area SA overlaps with the opening OP.

[0135] S104: Form an electrode layer 500, which includes a first electrode portion 510 and a second electrode portion 520. The first electrode portion 510 covers a photoresist pattern 410, and the second electrode portion 520 includes a portion located within the opening OP.

[0136] Figure 13 This is a schematic diagram of the structure after the electrode layer has been formed. (See diagram below.) Figure 13 As shown, an electrode layer 500 can be formed above the photoresist pattern 410 by means of vapor deposition or physical vapor deposition. The electrode layer 500 includes a first electrode portion 510 and a second electrode portion 520. The first electrode portion 510 covers the photoresist pattern 410 (i.e., the portion of the photoresist layer 400 retained during development), and the second electrode portion 520 includes a portion located within the opening OP of the first film layer 250.

[0137] Since the photoresist pattern 410 has vias 420, and the vias 420 overlap with the opening OP of the first film layer 250, when the electrode layer 500 is formed by vapor deposition or physical vapor deposition, the electrode layer 500 includes not only the portion located on the photoresist pattern 410, but also the portion located within the opening OP of the first film layer 250. Furthermore, by using a negative photoresist for the photoresist layer 400, sidewalls 410s inclined towards the center of the vias 420 can be formed at the vias 420 of the photoresist pattern 410, making it easier for the second electrode portion 520 of the electrode layer 500 to separate from the first electrode portion 510 at the vias 420.

[0138] Figure 14 for Figure 13 The comparison chart.

[0139] like Figure 14As shown, the metal interconnect electrode MCE is located on the planarization layer PLN, the photoresist pattern 410 is located on the planarization layer PLN, and the via 420 of the photoresist pattern 410 exposes at least a portion of the metal interconnect electrode MCE. The electrode layer 500' includes a first electrode portion 510' located on the upper surface of the photoresist pattern 410 and a second electrode portion 520' located in the via 420. In order to ensure that the first electrode portion 510' and the second electrode portion 520' are disconnected at the via 420, the thickness T1' of the photoresist pattern needs to be greater than the thickness of the electrode layer 500'. Since the second electrode portion 520' needs to be melted and pressed with the bonding electrode on the light-emitting element 300 during the subsequent bonding process between the light-emitting element 300 and the driving substrate 200, there are requirements on the thickness of the second electrode portion 520'. The thickness of the second electrode portion 520' cannot be too small. Therefore, the thickness T1' of the photoresist pattern cannot be too small either. This places certain requirements on the process and equipment for forming the photoresist layer and the process and equipment for patterning the photoresist layer, increasing the process difficulty.

[0140] In this application, as Figure 13 As shown, the thickness of electrode layer 500 is T2, and the thickness of the second electrode portion 520 of electrode layer 500 is also approximately T2. The second electrode portion 520 also includes a portion located within the opening OP of the first film layer 250. In this scheme, the first film layer 250 absorbs part of the thickness of electrode layer 500, reducing the requirement for the thickness T1 of photoresist layer 400. Specifically, the depth of the opening OP of the first film layer 250 absorbs part of the thickness of the second electrode portion 520, making the thickness of the portion of the second electrode portion 520 located within the via 420 less than the thickness T2 of electrode layer 500. This reduces the requirement for the depth of the via 420 of photoresist pattern 410, which in turn reduces the requirement for the thickness T1 of photoresist pattern 420. This reduces the thickness of the photoresist layer, lowers the process difficulty of photoresist fabrication, and is compatible with the equipment used for fabricating other film layers in display panels.

[0141] The electrode layer 500 may include a single-layer metal layer or a multi-layer metal layer stacked structure such as gold (Au), tin (Sn), nickel (Ni), titanium (Ti), aluminum (Al), silver (Ag), and indium (In). As an example, the electrode layer 500 is a gold (Au) film layer.

[0142] Figure 12 and Figure 13The diagram illustrates that the light-shielding area SA of the photomask has the same size as the opening OP of the first film layer 250. In another embodiment, the area of ​​the light-shielding area SA can be larger than the area of ​​the opening OP of the first film layer 250. As a result, the area of ​​the via 420 of the formed photoresist pattern 410 can be larger than the area of ​​the opening OP of the first film layer 250. Consequently, the second electrode portion 520 of the formed electrode layer 500 may include not only the portion filling the opening OP, but also the portion covering the upper surface of the first film layer 250. When bonding the bonding electrode 330 of the light-emitting element 300 to the second electrode portion 520, the contact area between the bonding electrode 330 and the second electrode portion 520 can be increased, thereby improving alignment accuracy and bonding reliability.

[0143] S105: Remove the photoresist pattern 410 and the first electrode portion 510.

[0144] Figure 15 This is a schematic diagram of the structure after the photoresist pattern has been removed.

[0145] like Figure 15 As shown, the second electrode portion 520 includes an opening OP located in the first film layer 250. The thickness of the second electrode portion 520 may be greater than the depth of the opening OP. That is, the second electrode portion 520 may also include a portion protruding from the upper surface of the first film layer 250.

[0146] After removing Figure 13 The photoresist pattern 410 in the structure shown, together with the first electrode portion 510 located on the photoresist pattern 410, can be obtained as follows: Figure 15 The structure shown.

[0147] The photoresist pattern 410 and the first electrode portion 510 can be removed using a stripping solution. The sidewalls 410s of the photoresist pattern 410 are inclined, creating a gap between the sidewalls 410s and the second electrode portion 520, facilitating the flow of the stripping solution (e.g., ...). Figure 13 (As indicated by the arrow located between the sidewall 410s and the second electrode portion 520), thereby smoothly removing the photoresist pattern 410 and the first electrode portion 510 located thereon.

[0148] S106: Provide a light-emitting element 300a and transfer the light-emitting element 300a to the top of the driving substrate 200, wherein the light-emitting element 300a includes a main body 310 and a bonding electrode 330.

[0149] Figure 16 This is a schematic diagram of a transfer light-emitting element.

[0150] like Figure 16As shown, the transfer device 600 transfers the light-emitting element 300a to the top of the driving substrate 200. The light-emitting element 300a can be additionally fabricated by processes such as epitaxial growth and patterning on the source substrate, and is placed above the driving substrate 200 by transfer.

[0151] The light-emitting element 300a includes a main body 310 and a bonding electrode 330. The structure of the main body 310 can be referred to Figure 4 and Figure 5 For related descriptions, please refer to [the relevant source]. Figure 16 The same parts will not be repeated.

[0152] The bonding electrode 330 may include a first bonding electrode 331 and a second bonding electrode 332. The first bonding electrode 331 is electrically connected to the P-type semiconductor layer 312, and the second bonding electrode 332 is electrically connected to the N-type semiconductor layer 311.

[0153] The bonding electrode 330 may include a single metal layer or a multilayer metal layer stack structure such as gold (Au) or indium (In). As an example, the bonding electrode 330 includes an indium (In) film layer.

[0154] The transfer device 600 may include a transfer head, a transfer substrate, etc. As an example, the transfer device 600 may be a stamp, which picks up multiple light-emitting elements 300a by van der Waals forces and releases the light-emitting elements 300a at a specific position to complete the transfer of the light-emitting elements 300a.

[0155] S107: Bond the light-emitting element 300a to the second electrode portion 520, so that the bonding electrode 330 and the second electrode portion 520 form the electrode 320 of the light-emitting element 300.

[0156] Figure 17 This is a schematic diagram of the bonding process between the light-emitting element and the driving substrate.

[0157] like Figure 17 As shown, the bonding electrode 330 of the light-emitting element 300a contacts the second electrode portion 520 located on the driving substrate 200, and a eutectic reaction occurs at a certain temperature, causing the bonding electrode 330 and the second electrode portion 520 to crystallize into a crystalline mixture (eutectic), thus forming... Figure 17 The light-emitting element 300 has electrodes 320 (first electrode 321 and second electrode 322). As an example, the second electrode portion 520 includes gold (Au), the bonding electrode 330 includes indium (In), and the electrodes 320 of the light-emitting element 300 formed by the eutectic reaction of the second electrode portion 520 and the bonding electrode 330 are gold-indium alloys.

[0158] During the bonding process, the second electrode portion 520 melts and is squeezed, making it prone to flow. By placing it within the opening OP, the range of its flow to the surrounding area is reduced, thus preventing a short circuit from occurring when the first electrode 321 and the second electrode 322 come into contact.

[0159] Figure 18 This is another schematic diagram of the transfer of light-emitting elements.

[0160] Combination Figure 6 and Figure 18 Another embodiment of the method for manufacturing a display panel provided in this invention will be described.

[0161] Steps S101-S103 and S105 can be described as before. The process of steps S104, S106 and S107 is explained as follows:

[0162] S104: Form an electrode layer 500, which includes a first electrode portion 510 and a second electrode portion 520. The first electrode portion 510 covers a photoresist pattern 410, and the second electrode portion 520 includes a portion located within the opening OP.

[0163] In this step, the electrode layer 500 includes a stacked first metal and a second metal, such as the first metal being gold (Au) and the second metal being indium (In).

[0164] S106: Provide a light-emitting element 300b and transfer the light-emitting element 300b to the top of the driving substrate 200, wherein the light-emitting element 300b includes a main body portion 310.

[0165] S107: Bond the light-emitting element 300b to the second electrode portion 520, so that the second electrode portion 520 forms the electrode 320 of the light-emitting element 300.

[0166] In this step, the stacked first and second metals in the second electrode portion 520 undergo a eutectic reaction to form a gold-indium alloy, which serves as the electrode 320 of the light-emitting element 300. Simultaneously, during this bonding process, the main body portion 310 of the light-emitting element 300b also comes into contact with the second electrode portion 520, forming a fixed electrical connection.

[0167] like Figure 3 As shown, the first film layer 250 may include a first organic layer 251, which includes photoresist, polyacrylate resin, polyimide resin, polyamide resin, siloxane resin, acrylic resin, and epoxy resin, etc.

[0168] based on Figure 6 Step S104 in Figures 13-14According to the accompanying text, the first film layer 250 includes a first organic layer 251, which can provide an opening (OP) of a certain depth, reducing the thickness requirement of the photoresist layer 400 and thus reducing the process difficulty. Simultaneously, the first organic layer 251 can continue to provide a flat surface above the connector 240, facilitating the smooth eutectic process between the second electrode portion 520 and the bonding electrode 330, and improving the reliability of electrode bonding. Based on this, the first organic layer 251 can serve as a second planarization layer.

[0169] Figure 19 For along Figure 2 Another cross-sectional view of the centerline AA'.

[0170] like Figure 19 As shown, the first organic layer 251 is provided with a first opening OP1, and the opening OP of the first film layer 250 includes the first opening OP1. Along the direction from the first film layer 250 to the light-emitting element 300 (as shown by the arrow in the figure), the sidewall OPW1 of the first opening OP1 is inclined toward the interior of the first opening OP1, that is, the area of ​​the top surface of the first opening OP1 (near the main body 310 of the light-emitting element 300) is smaller than the area of ​​the bottom surface of the first opening OP1 (near the connecting part 240).

[0171] The electrode 320 of the light-emitting element 300 includes a first portion 320a that fills the first opening OP1. With the inclined arrangement of the sidewall OPW1 of the first opening OP1, the ability of the driving substrate 200 to fix the light-emitting element 300 is improved, and the probability of the light-emitting element 300 falling off the driving substrate 200 is reduced.

[0172] Figure 19 In and Figure 3 For parts with the same reference numerals in the accompanying drawings, please refer to the foregoing content, which will not be repeated here.

[0173] Figure 20 This is a schematic diagram of another structure for patterning photoresist layers.

[0174] based on Figure 19 The structure of the first organic layer 251, for Figure 6 The process in step S103 is as follows: Figure 20 The illustration is shown below.

[0175] In the method for manufacturing a display panel, step S101: forming a first film layer 250 of the driving substrate 200 includes:

[0176] A first organic layer 251 is formed, and a first opening OP1 is provided in the first organic layer 251.

[0177] The structure of the first organic layer 251 can be referenced. Figure 3 , Figure 19 and Figure 20 .

[0178] The first organic layer 251 may include negative photoresist.

[0179] The structure of the first organic layer 251, formed using negative photoresist, can be referenced. Figure 19 and Figure 20 .

[0180] like Figure 19 As shown, the first organic layer uses negative photoresist, causing the sidewall OPW1 of the formed first opening OP1 to tilt toward the interior of the first opening OP1.

[0181] like Figure 20 As shown, when both the first organic layer 251 and the photoresist layer 400 use negative photoresist, the first organic layer 251 and the photoresist pattern 410 can be formed using a mask with the same light-shielding area pattern (such as the same mask), saving the mask manufacturing cost.

[0182] The first organic layer 251 includes a light-absorbing material. The first organic layer 251 can be used to block light, reducing the reflectivity of the display panel by absorbing ambient light. For example, the first organic layer 251 includes a black pigment. As an example, the first organic layer 251 can be a black photoresist.

[0183] Figure 21 This is a partial top view of the first organic layer. Figure 22 For along Figure 2 Another cross-sectional view of line AA' in the diagram. Figure 22 and Figure 3 The difference between them is that, Figure 3 The first organic layer 251 is translucent, while Figure 22 The first organic layer 252 includes a light-absorbing material. Figure 22 Other structures can be referenced. Figure 3 The relevant textual explanations will not be repeated here.

[0184] like Figure 21 and Figure 22As shown, except for the location where the first opening OP1 is set, the other parts of the first organic layer 251 can block light. On the one hand, the first organic layer 251 can greatly reduce the problem of high reflectivity of the display panel caused by the metal components in the driving circuit layer 220. On the other hand, the first organic layer can also reduce the impact of ambient light on the performance of the components in the driving circuit layer 220. For example, it can prevent ambient light from entering the thin film transistor and causing light leakage. Furthermore, the first organic layer 251 can absorb the light emitted downwards by the light-emitting element 300 and prevent it from being reflected and affecting the display effect.

[0185] In embodiments where the first organic layer 251 is a negative photoresist, the first organic layer 251 may include a light-absorbing material. As an example, Figure 19 The first organic layer 251 in the middle can be transparent to light, or, Figure 19 The first organic layer 251 may include a light-absorbing material that blocks light.

[0186] The first film layer 250 of the display panel may also include a protective layer 252.

[0187] Figure 23 For along Figure 2 Another cross-sectional view of line AA'. Figure 23 and Figure 22 The difference between them is that, Figure 22 The first film layer 250 includes a first organic layer 251, while Figure 23 The first membrane layer 250 includes a first organic layer 251 and a protective layer stacked together. Figure 23 Other structures can be referenced. Figure 3 , Figure 22 The relevant textual explanations will not be repeated here.

[0188] like Figure 23 As shown, the first film layer 250 in the display panel includes a first organic layer 251 and a protective layer 252. The protective layer 252 covers the first organic layer 251 and is in contact with the first organic layer 251.

[0189] The first organic layer 251 has a first opening OP1, and the protective layer 252 has a second opening OP2, with the first opening OP1 and the second opening OP2 overlapping. The opening OP of the first film layer 252 can be composed of the first opening OP1 and the second opening OP2.

[0190] The electrode 320 includes portions disposed within the first opening OP1 and the second opening OP2.

[0191] The protective layer 252 can cover the upper surface of the first organic layer 251 and the sidewall of the first opening OP of the first organic layer 251, that is, the protective layer 252 wraps the exposed surface of the first organic layer.

[0192] The portion of the electrode 320 of the light-emitting element 300 located within the opening OP is in contact with the protective layer 252.

[0193] For embodiments where the first film layer 250 includes a stacked first organic layer 251 and a protective layer 252, Figure 6 The process steps S101, S104, and S105 are described in the following sections. Figure 24 The illustration is shown below.

[0194] Figure 24 A schematic diagram of the process of forming the first film layer, forming the electrode layer, and removing part of the electrode.

[0195] Combination Figure 6 and Figure 24 The steps S101, S102, S104, and S105 in the method for manufacturing the display panel are explained as follows:

[0196] Step S101: Forming the first film layer 250 of the driving substrate 200, including:

[0197] A first organic layer 251 is formed, and a first opening OP1 is provided in the first organic layer 251;

[0198] A protective layer 252 is formed, which covers the first organic layer 251. The protective layer 252 is provided with a second opening OP2, which overlaps with the first opening OP1.

[0199] Step S102: Forming a photoresist layer 400, the photoresist layer 400 being located on one side of the first film layer 250, including:

[0200] The photoresist layer 400 is located on the side of the protective layer 252 away from the first organic layer 251.

[0201] Step S104: Form an electrode layer 500, which includes a first electrode portion 510 and a second electrode portion 520. The first electrode portion 510 covers a photoresist pattern 410, and the second electrode portion 520 includes a portion located within the opening OP.

[0202] Step S105: Remove the photoresist pattern 410 and the first electrode portion 510.

[0203] The photoresist pattern 410 and the first electrode portion 510 are removed using a stripping solution. During the process of forming the structure in step S105 from the structure in step S104, the stripping solution also flows into the gap between the sidewall 410s of the photoresist pattern 410 and the second electrode portion 520, such as... Figure 24 The arrows in the structure diagram of step S104 are shown.

[0204] In structures that do not include protective layer 252 (such as...) Figure 22 As shown, the first organic layer 251 is exposed in the gap. The stripping solution comes into contact with the first organic layer 251 in the gap, causing the black photoresist constituting the first organic layer to fade and become ineffective.

[0205] A protective layer 252 is provided, which covers the exposed surface of the first organic layer 251 and isolates the first organic layer 251 from the stripping solution. This prevents the stripping solution from contacting the first organic layer 251 and being corroded by the solution when removing the photoresist pattern 410, thereby avoiding fading and failure of the first organic layer 251.

[0206] The protective layer 252 can be made of a material that is resistant to the effects of peeling agents.

[0207] The protective layer 252 may include an inorganic layer. The portion of the electrode 320 located within the opening OP is in contact with the inorganic layer 252, and there is good adhesion between the electrode 320 and the inorganic layer 252, which can prevent the electrode 320 from falling off. The protective layer 252 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

[0208] Figure 25 For along Figure 2 Another cross-sectional view of the centerline AA'.

[0209] like Figure 25 As shown, the display panel also includes an encapsulation layer 700 for encapsulating the light-emitting element 300. The encapsulation layer 700 may include encapsulating adhesive 710, which may cover the driving substrate 200 and the light-emitting element 300.

[0210] In embodiments where the first organic layer 251 in the first film layer 250 includes a light-absorbing material, the first organic layer 251 is used to reduce the reflectivity of the display panel. After adding a protective layer 252 to the first film layer 250, an interface between the protective layer 252 and the encapsulant 710 is added to the display panel. The added interface can easily lead to an increase in reflectivity, which hinders the achievement of the purpose of reducing the reflectivity of the display panel by using the first organic layer 251.

[0211] Based on this, the protective layer 252 may include a silicon oxide layer.

[0212] The refractive index of the silicon oxide layer is similar to that of the encapsulation layer 700. For example, the refractive index of the silicon oxide layer is similar to that of the encapsulant 710, which reduces the interface reflection between the protective layer 252 and the encapsulant 710 and can improve the problem of increased reflectivity caused by the large difference in refractive index.

[0213] Figure 26 This is a schematic diagram of the structure of the first film layer provided in an embodiment of the present invention.

[0214] like Figure 26 As shown, the first film layer 250 includes a first organic layer 251 and a protective layer 252. The protective layer 252 includes a stacked silicon nitride layer 252a and a silicon oxide layer 252b, with the silicon nitride layer 252a located between the silicon oxide layer 252b and the first organic layer 251.

[0215] Depositing a silicon oxide layer directly on the first organic layer 251 can easily lead to cracking and peeling. Adding a silicon nitride layer 252a between the silicon oxide layer 252b and the first organic layer 251 can act as a transition between the two, improving the film bonding performance between the protective layer 252 and the first organic layer 251 and preventing film separation.

[0216] like Figure 26 As shown, the thickness T3 of the silicon nitride layer 252a is less than the thickness T4 of the silicon oxide layer 252b. Specifically, T3 ≤ 40 nm, 200 nm ≤ T4 ≤ 400 nm. As an example, T3 = 30 nm, T4 = 200 nm, or T3 = 30 nm, T4 = 400 nm. By setting the thickness T3 of the silicon nitride layer 252a to be less than the thickness T4 of the silicon oxide layer 252b, the reflectivity problem caused by the interface between the silicon nitride layer 252a and the silicon oxide layer 252b can be reduced.

[0217] Figure 27 For along Figure 2 Another cross-sectional view of the centerline AA'.

[0218] like Figure 27 As shown, the first membrane layer 250 includes a first organic layer 251 and a protective layer 252. The first organic layer 251 is provided with a first opening OP1, and the protective layer 252 is provided with a second opening OP2, wherein the second opening OP2 is larger than the first opening OP1.

[0219] When the bonding electrode 330 of the light-emitting element 300a is bonded to the second electrode portion 520, the bonding electrode 330 and the second electrode portion 520 melt and are subjected to pressure, which can easily cause the molten part to flow and diffuse to the surrounding area. By providing a protective layer 252, and the second opening OP2 of the protective layer 252 being larger than the first opening OP1 of the first organic layer 251, more space can be provided for the molten part of the second electrode portion 520 and the bonding electrode 330, preventing short circuits between the formed electrodes 320. In addition, after the bonding electrode 330 and the second electrode portion 520 form a eutectic (e.g., electrode 320), the eutectic contacts both the sidewall of the first organic layer 251 and the protective layer 252, improving the adhesion between the electrode 320 and the first film layer 250 and preventing the light-emitting element 300 from falling off.

[0220] Figure 27 Taking the first organic layer 251 in the first film layer 250 as an example, this is an example of a light-transmitting film layer. In another embodiment, the first organic layer 251 in the first film layer 250 can be used as a light-transmitting film layer. Figure 27 The first organic layer 251 is replaced with a film layer containing light-absorbing material. A film layer containing light-absorbing material can be referenced. Figure 22 , Figure 23 , Figure 25 The first organic layer 251. In another embodiment, it can be... Figure 27 The first organic layer 251 is replaced with a film layer containing negative photoresist. A film layer containing negative photoresist can be found in [reference needed]. Figure 19 The first organic layer 251.

[0221] Regarding the size relationship between the first opening OP1 of the first organic layer 251 and the second opening OP2 of the protective layer 252, the second opening OP2 can be set to be smaller than the first opening OP1, which can improve the problem of the light-emitting element 300 being easy to fall off.

[0222] Figure 28 and Figure 29 They are respectively Figure 1 Another enlarged view of a portion of the display area. Figure 30 and Figure 31 They are respectively Figure 28 and Figure 29 An enlarged view of region A1 in the diagram. Figure 32 and Figure 33 They are respectively Figure 28 and Figure 29 An enlarged view of region A2 in the diagram. Figure 34 and Figure 35 They are respectively Figure 28 and Figure 29 An enlarged view of region A3 in the diagram. Figures 36-39 respectively along Figure 28 and Figure 29 A cross-sectional schematic diagram of line DD' in the diagram. Figure 40 For along Figure 29 A cross-sectional schematic diagram of line EE' in the diagram. Figures 41-43 respectively along Figure 28 and Figure 29 A cross-sectional schematic diagram of line DD' in the diagram. Figure 44 for Figure 29 An enlarged schematic diagram of region A4 in the image.

[0223] It should be noted that, Figures 30-35 The diagrams illustrate the shapes of the openings in the relevant membrane layers and the size relationships between each opening. Taking the opening markings in the first organic layer 251 as an example, they are shown... Figures 30-35 They are labeled as 251OP1 and 251OP2 respectively.

[0224] in, Figure 30 , Figure 32 and Figure 34 This illustration shows an embodiment where the first film layer 250 includes a first organic layer 251. (See reference...)

[0225] Figure 31 , Figure 33 and Figure 35 This illustrates an embodiment in which the first film layer 250 includes a first organic layer 251 and a protective layer.

[0226] Figures 28-43 For parts that are the same as those in the aforementioned figures, please refer to the above content; they will not be repeated here.

[0227] like Figures 28-44 As shown, the display panel includes a pixel light-transmitting area PTA and a non-light-transmitting area PNTA, and the non-light-transmitting area PNTA includes a light-emitting element setting area.

[0228] The light-emitting element setting area is the area where the light-emitting element 300 is bonded, such as... Figure 28 As shown, the light-emitting element setting area includes regions for setting the blue light-emitting element PB, the green light-emitting element PG, and the red light-emitting element PR, respectively. For example... Figure 29 Figure 29 As shown, the light-emitting element setting area includes regions for setting blue light-emitting element PB, green light-emitting element PG, and red light-emitting element PR, respectively, and includes a redundant setting area Pre. When a bonded light-emitting element 300 fails, a normal light-emitting element 300 can be rebonded in the redundant setting area Pre for repair. The two connecting portions 240 in the redundant setting area Pre can be respectively connected to the two connecting portions 240 in the adjacent light-emitting element setting area.

[0229] Blue light-emitting element PB, green light-emitting element PG, and red light-emitting element PR can be used to form pixel P.

[0230] The first organic layer 251 in the first film layer 250 includes a light-absorbing material and transmits light through an opening. The first organic layer 251 is provided with a first opening OP1 (or opening OP) and a third opening OP3. The first opening OP1 defines a light-emitting element setting area, and the third opening OP3 defines a pixel light-transmitting area PTA.

[0231] like Figure 36 As shown, the first film layer 250 includes a first organic layer 251, and the electrode 320 of the light-emitting element 300 fills the first opening OP1 of the first organic layer 251.

[0232] like Figure 37 As shown, the first film layer 250 includes a first organic layer 251 and a protective layer 252. The first organic layer 251 and the protective layer 252 together form the opening OP of the first film layer 250. The electrode 320 of the light-emitting element 300 fills the opening OP and contacts the protective layer 252.

[0233] like Figure 38 and Figure 39 As shown, the first film layer 250 includes a first organic layer 251 and a protective layer 252. In a first direction, the distance D1 between the light-emitting element 300 and the edge of the first opening OP1 is greater than zero, wherein the first direction is parallel to the surface where the display panel is located.

[0234] The opening of the first organic layer 251 is extended by a certain distance D1 compared to the light-emitting element 300, so as to leave space for the transfer device 600 (such as a stamp) to hold the light-emitting element 300a and space for the light-emitting element 300a to be aligned with the second electrode part 520.

[0235] When the first opening OP1 is expanded outward compared to the light-emitting element 300, the connecting part 420 will be exposed, which will lead to an increase in reflectivity. Therefore, the distance D1 cannot be too large. For example, the distance D1 between the light-emitting element 300 and the edge of the first opening OP1 is less than 10 micrometers.

[0236] The distance D1 between the light-emitting element 300 and the edge of the first opening OP1 can be in the range of 2 micrometers to 7 micrometers.

[0237] The height of the first organic layer 251 can be lower than the height of the light-emitting element 300, which facilitates the transfer of the light-emitting element.

[0238] The driving substrate 200 includes a driving circuit layer 220, a planarization layer 230, and a connection portion 240. The planarization layer 240 is located between the driving circuit layer 220 and the connection portion 240. The connection portion 240 is located between the planarization layer 230 and the first organic layer 251. The first opening OP1 of the first organic layer 251 exposes the connection portion 240.

[0239] The driving circuit layer 220 includes a thin film transistor (TFT), and the connection portion 240 includes a first connection portion 241. The first connection portion 241 is connected to the thin film transistor (TFT) through the contact hole CH of the planarization layer 230. The contact hole CH does not overlap with the first opening OP1 of the first organic layer 251, that is, the contact hole CH is located away from the light-emitting element setting area.

[0240] The planarization layer 230 has a fourth opening, which overlaps with the pixel light-transmitting area PTA. The first organic layer 251 covers the sidewall 230s of the fourth opening of the planarization layer 230 to block light and reduce reflection.

[0241] The first membrane layer 250 further includes a protective layer 252, which covers the sidewall of the first opening OP1 and the sidewall of the third opening OP3 of the first organic layer 251.

[0242] The protective layer 252 has a fifth opening located in the pixel light-transmitting area PTA. The shape of the fifth opening is a rectangle with its four corners removed, such as a rounded rectangle. Figure 33 The opening shape 252OP2 of the protective layer 252 is shown in the figure. This solution can improve the situation where the first organic layer or the protective layer has holes due to the high step difference at the edge of the PTA in the pixel light-transmitting area, as well as the resulting problems such as peeling solution penetration and over-etching at the four corners.

[0243] Figure 38 and Figure 39 The difference is that, in Figure 38 In this process, a first organic layer 251 is further included between the first electrode 321 and the second electrode 322. Figure 39 In this process, the first organic layer 251 may not be provided between the first electrode 321 and the second electrode 322. In this way, the protective layer may not be provided between the first electrode 321 and the second electrode 322, which is conducive to the release of gas generated in the first organic layer 251 during subsequent high-temperature processes. Otherwise, the first organic layer may expand and crack.

[0244] like Figure 40 As shown, the driving substrate 200 includes a redundant electrode Pre. Since no eutectic process occurs, the redundant electrode Pre can be a second electrode portion 520. As an example, the redundant electrode Pre includes gold (Au).

[0245] like Figure 41 and Figure 42 As shown, the display panel also includes an encapsulation layer 700, which may include encapsulating adhesive 710 and a cover plate 720. The encapsulating adhesive 710 covers the driving substrate 200 and is used to encapsulate the light-emitting element 300. The encapsulating adhesive 710 covers the side of the light-emitting element 300 and may also cover the upper surface of the light-emitting element 300 at the same time.

[0246] It should be noted that in other figures not shown, the encapsulation layer 700 may also be disposed above the driving substrate of the display panel. The specific structure of the encapsulation layer 700 can be referred to the relevant figures.

[0247] like Figure 42 As shown, the display panel also includes a black matrix 800, located on the side of the encapsulating adhesive 710 away from the driving substrate 200. The black matrix 800 has a first light-transmitting hole 810 and a second light-transmitting hole 820. The first light-transmitting hole 810 is located in the light-emitting element area, and the second light-transmitting hole 820 is located in the pixel light-transmitting area PTA. The black matrix 800 can be mesh-like, with the first and second light-transmitting holes 810 and 820 forming its grid. The black matrix 800 can reduce the reflectivity of the display panel and simultaneously reduce crosstalk between the light-emitting elements 300.

[0248] In the second direction, the distance D2 between the edge of the first light-transmitting hole 810 and the light-emitting element 300 is less than the distance D1 between the edge of the first opening OP1 and the light-emitting element 300, wherein the second direction is parallel to the plane of the display panel. This arrangement can further improve the problem of high reflectivity caused by the connection portion 240 located in the first opening OP1.

[0249] like Figure 42 and Figure 43 As shown, the encapsulation layer 700 of the display panel also includes an adhesive layer 730, which is located between the encapsulating adhesive 710 and the cover plate 720.

[0250] like Figure 43 As shown, the display panel also includes a color resist 900, which covers the light-emitting element 300. This serves to filter light and improve light purity.

[0251] like Figure 44 As shown, the driving substrate also includes a redundant electrode Pre. Since no eutectic process occurs, the redundant electrode Pre can be a second electrode portion 520. As an example, the redundant electrode Pre includes gold (Au), and the color resist 900 covers the redundant electrode Pre to reduce the influence of the redundant electrode Pre on the reflectivity of the display panel.

[0252] Color resist 900 includes a blue color resist 910, a green color resist 920, and a red color resist 930. Light-emitting element 300 includes a blue light-emitting element PB, a green light-emitting element PG, and a red light-emitting element PR. The blue color resist 910 covers the blue light-emitting element PB, the green color resist 920 covers the green light-emitting element PG, and the red color resist 930 covers the red light-emitting element PR. In other embodiments, the red color resist may be omitted. On the one hand, the light emission efficiency of red light-emitting elements is low, and adding a red color resist further reduces the light emission efficiency. On the other hand, the wavelength of light reflected by the redundant electrode Pre or the connection portion 240 is mostly red-biased; even if a red color resist is used, its anti-reflection effect is very limited.

[0253] The display panel 100 provided in this embodiment of the invention can be used for transparent display.

[0254] Figure 45 This is a schematic diagram of a display device provided in an embodiment of the present invention. Figure 45 The display device 1000 in this embodiment is taken as a mobile phone. The display device provided in this embodiment of the invention may include, but is not limited to, mobile phones, tablet computers, wall-mounted displays, transparent display devices, and other devices with display functions.

[0255] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display panel, characterized in that, include: Substrate and driving circuit layer located on said substrate; The first film layer is located on the side of the driving circuit layer away from the substrate; A planarization layer is located between the first film layer and the driving circuit layer; A connecting portion is located between the planarization layer and the first film layer; the first film layer has an opening that exposes the connecting portion, and the electrode of the light-emitting element is electrically connected to the connecting portion; The first membrane layer includes a stacked first organic layer and a protective layer, wherein the protective layer covers the first organic layer; The display panel includes a pixel light-transmitting area and a non-light-transmitting area, and the non-light-transmitting area includes a light-emitting element setting area; The first organic layer is provided with a first opening and a third opening, the first opening defining the light-emitting element setting area and the third opening defining the pixel light-transmitting area.

2. The display panel according to claim 1, characterized in that, The first organic layer has a first opening, and the protective layer has a second opening, with the first opening and the second opening overlapping.

3. The display panel according to claim 2, characterized in that, The protective layer covers the sidewall of the first opening.

4. The display panel according to claim 2, characterized in that, The second opening is larger than the first opening.

5. The display panel according to claim 2, characterized in that, The second opening is smaller than the first opening.

6. The display panel according to claim 1, characterized in that, The protective layer includes an inorganic layer.

7. The display panel according to claim 6, characterized in that, The protective layer comprises a stacked silicon nitride layer and a silicon oxide layer, wherein the silicon nitride layer is located between the silicon oxide layer and the first organic layer.

8. The display panel according to claim 7, characterized in that, The thickness of the silicon nitride layer is less than the thickness of the silicon oxide layer.

9. The display panel according to claim 1, characterized in that, The first organic layer includes a light-absorbing material.

10. The display panel according to claim 1, characterized in that, The protective layer is in contact with the first organic layer.

11. The display panel according to claim 1, characterized in that, The light-emitting element includes a main body, and the electrode includes a first electrode and a second electrode, wherein the first electrode and the second electrode are located on the same side of the main body.

12. The display panel according to claim 11, characterized in that, Both the first electrode and the second electrode are located on the side of the main body facing the substrate.

13. The display panel according to claim 11, characterized in that, The connection portion includes a first connection portion and a second connection portion, wherein the first electrode is electrically connected to the first connection portion and the second electrode is electrically connected to the second connection portion.

14. The display panel according to claim 1, characterized in that, The electrode includes a first portion located in the opening, and the first portion is electrically connected to the connecting portion.

15. The display panel according to claim 14, characterized in that, The electrode further includes a second portion located between the first portion and the main body of the light-emitting element, wherein the area of ​​the second portion is greater than or equal to the area of ​​the first portion.

16. The display panel according to claim 1, characterized in that, The first organic layer has a first opening, and the sidewall of the first opening is inclined toward the interior of the first opening along the direction from the first film layer toward the light-emitting element.

17. The display panel according to claim 1, characterized in that, In the first direction, the distance between the electrode of the light-emitting element and the edge of the first opening is greater than zero; The first direction is parallel to the plane on which the display panel is located.

18. The display panel according to claim 17, characterized in that, The distance between the electrode of the light-emitting element and the edge of the first opening is less than 10 micrometers.

19. The display panel according to claim 1, characterized in that, The first opening exposes the connecting portion; The driving circuit layer includes thin-film transistors; The connection portion includes a first connection portion, which is connected to the thin-film transistor through a contact hole in the planarization layer; The contact hole does not overlap with the first opening.

20. The display panel according to claim 1, characterized in that, The planarization layer has a fourth opening, which overlaps with the light-transmitting area of ​​the pixel, and the first organic layer covers the sidewall of the fourth opening of the planarization layer.

21. The display panel according to claim 1, characterized in that, The height of the first organic layer is lower than the height of the light-emitting element.

22. The display panel according to claim 1, characterized in that, The protective layer covers the sidewalls of the first opening and the third opening.

23. The display panel according to claim 1, characterized in that, The protective layer has a fifth opening, which is located in the light-transmitting area of ​​the pixel, and the shape of the fifth opening is a rectangle with the four corners removed.

24. The display panel according to claim 1, characterized in that, The light-emitting element is an inorganic light-emitting diode.

25. The display panel according to claim 1, characterized in that, The electrode includes a first electrode and a second electrode, and the first organic layer is not disposed between the first electrode and the second electrode.

26. A display device, characterized in that, Includes the display panel as described in any one of claims 1-25.

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