Method for manufacturing optical module, optical module, and method for manufacturing light-emitting device

Abstract

The invention relates to a method for manufacturing an optical module, an optical module, and a method for manufacturing a light-emitting device. The manufacturing method of the optical assembly comprises the following steps: providing a lower transparent substrate; wherein the lower transparent substrate is provided with an upper surface; providing a quantum dot thin film unit and a rubber wall, and arranging the quantum dot thin film unit and the rubber wall on the upper surface; wherein the rubber enclosing wall surrounds the quantum dot thin film unit; providing an upper transparent substrate which covers the quantum dot thin film unit and the rubber material enclosing wall, so that the quantum dot thin film unit and the rubber material enclosing wall are clamped between the lower transparent substrate and the upper transparent substrate; and cutting the lower transparent substrate and the upper transparent substrate to form a lower protective film and an upper protective film corresponding to the quantum dot thin film units, and obtaining the optical assembly comprising the lower protective film, the upper protective film, the quantum dot thin film units and the rubber material enclosing wall.

Description

Technical Field

[0001] The present invention relates to a light-emitting device having quantum dots, and more particularly to a method for manufacturing an optical component, an optical component having quantum dots, and a method for manufacturing a light-emitting device having quantum dots. Background Art

[0002] Quantum dots are used to be excited by light to generate an excitation spectrum. Therefore, quantum dots are often used to convert the wavelength of light-emitting diodes, so that the emission spectrum of the light-emitting device is not limited to the original emission spectrum of the light-emitting diode, and the desired light-emitting effect is obtained. The existing application of quantum dots is to add semiconductor nanoparticles into a carrier substrate, and then directly cover the carrier substrate on the light-emitting diode chip to form a quantum dot film. The light emitted by the light-emitting diode chip passes through the quantum dot film to excite the quantum dots to generate excitation light.

[0003] The quantum dot film is in direct contact with the surface of the light-emitting diode chip, which easily causes the carrier substrate to degrade rapidly. Secondly, the carrier substrate of the quantum dot film is directly exposed to the air and contacts oxygen and water vapor, which also makes the carrier substrate prone to degradation. The above two factors will cause the quantum dot film to degrade rapidly, affecting the service life of the light-emitting diode light-emitting device.

[0004] The existing technology is to arrange an array of quantum dot film units between two glass substrates, and then cut the glass substrates by a water jet or a laser to obtain a plurality of quantum dot film units whose top and bottom surfaces are covered by the glass substrates. However, this design has two disadvantages. First, only the top and bottom surfaces of the quantum dot film unit are covered and protected by the glass substrates, and at most it can only isolate the high temperature of the light-emitting diode chip and protect against impacts from above; the side surfaces of the quantum dot film unit are still exposed to the air. Second, during the cutting process, the side surfaces of the quantum dot film units are easily damaged by the impact of the water jet or degraded prematurely under the high temperature of the laser, affecting the production yield and service life of the quantum dot film units. Summary of the Invention

[0005] Based on the above technical problems, the present invention provides a method for manufacturing an optical component, an optical component having quantum dots, and a method for manufacturing a light-emitting device having quantum dots, which are used to improve the lifespan of quantum dot film units.

[0006] The present invention provides a manufacturing method for an optical component, including: providing a lower transparent substrate; wherein, the lower transparent substrate has an upper surface; providing a quantum dot thin film unit and a glue material enclosure, which are disposed on the upper surface; wherein, the glue material enclosure surrounds the quantum dot thin film unit; providing an upper transparent substrate, covering the quantum dot thin film unit and the glue material enclosure, so that the quantum dot thin film unit and the glue material enclosure are clamped between the lower transparent substrate and the upper transparent substrate; and cutting the lower transparent substrate and the upper transparent substrate to form a lower protective film and an upper protective film corresponding to the quantum dot thin film unit, obtaining an optical component including the lower protective film, the upper protective film, the quantum dot thin film unit and the glue material enclosure.

[0007] Preferably, the step of providing the quantum dot thin film unit and the glue material enclosure includes: disposing the glue material enclosure on the upper surface; wherein, the glue material enclosure surrounds an accommodation area; and disposing the quantum dot thin film unit in the accommodation area.

[0008] Preferably, the step of disposing the glue material enclosure includes coating the glue material on the upper surface according to a closed path to form the glue material enclosure.

[0009] Further, the manufacturing method for the optical component further includes thermally curing the glue material.

[0010] Preferably, the step of disposing the quantum dot thin film unit includes injecting quantum dot glue into the accommodation area, and the quantum dot glue includes a photo-curing glue and luminescent semiconductor nanoparticles.

[0011] Further, the manufacturing method for the optical component further includes, after the upper transparent substrate covers the quantum dot thin film unit and the glue material enclosure, thermally curing the glue material enclosure and irradiating the quantum dot glue with UV light for photo-curing.

[0012] Preferably, the thickness of the quantum dot glue coating is between 20 and 200 μm.

[0013] Preferably, the method for cutting the lower transparent substrate and the upper transparent substrate is water jet cutting or laser cutting.

[0014] The present invention also provides an optical component, including a lower protective film, a quantum dot thin film unit, a glue material enclosure and an upper protective film. The quantum dot thin film unit is disposed on the lower protective film. The glue material enclosure is disposed on the lower protective film; wherein, the glue material enclosure surrounds the quantum dot thin film unit and covers the side surface of the quantum dot thin film unit. The upper protective film covers the quantum dot thin film unit and the dry glue material enclosure, so that the quantum dot thin film unit and the glue material enclosure are clamped and disposed between the lower protective film and the upper protective film.

[0015] The invention also provides a method for manufacturing a light-emitting device, including manufacturing the above optical component; providing a carrier board; disposing a light-emitting diode unit on the carrier board, wherein the light-emitting diode unit at least has a light-emitting diode chip; and disposing the optical component on the light-emitting diode unit.

[0016] Through the method for manufacturing an optical component, the optical component with quantum dots, and the method for manufacturing a light-emitting device with quantum dots provided by the present invention, the quantum dot film unit is completely encapsulated between the upper protective film, the lower protective film and the glue material enclosure. The quantum dot film unit is isolated from the outside air and will not be adversely affected during the cutting process, slowing down the material degradation of the quantum dot film unit, thereby improving the service life of the quantum dot optical component. At the same time, the manufacturing method provided by the present invention can also mass-produce optical components and light-emitting devices to maintain the required production capacity. Description of the Drawings

[0017] Figure 1 It is a flowchart of the method for manufacturing an optical component in an embodiment of the present invention.

[0018] Figure 2 It is a cross-sectional schematic view of a semi-finished product of an optical component in an embodiment of the present invention, revealing the carrier board and the glue material enclosure.

[0019] Figure 3 It is a top view of a semi-finished product of an optical component in an embodiment of the present invention, revealing the lower transparent substrate and the glue material enclosure.

[0020] Figure 4 It is a cross-sectional schematic view of a semi-finished product of an optical component in an embodiment of the present invention, revealing the lower transparent substrate, the glue material enclosure and the quantum dot film unit.

[0021] Figure 5 It is a top view of a semi-finished product of an optical component in an embodiment of the present invention, revealing the lower transparent substrate, the glue material enclosure and the quantum dot film unit.

[0022] Figure 6 It is a cross-sectional schematic view of a semi-finished product of an optical component in an embodiment of the present invention, revealing the lower transparent substrate, the glue material enclosure, the quantum dot film unit and the upper transparent substrate.

[0023] Figure 7 It is a top view of a semi-finished product of an optical component in an embodiment of the present invention, revealing the glue material enclosure, the quantum dot film unit and the upper transparent substrate.

[0024] Figure 8 It is a cross-sectional schematic view of multiple optical components in an embodiment of the present invention, revealing the lower transparent substrate, the glue material enclosure, the quantum dot film unit and the upper transparent substrate.

[0025] Figure 9In the embodiment of the present invention, it is a top view of some components of an optical component, revealing a glue material enclosure and a quantum dot thin film unit.

[0026] Figure 10 In Application Example 1 of the embodiment of the present invention, it is a schematic cross-sectional view of a light-emitting device.

[0027] Figure 11 In Application Example 2 of the embodiment of the present invention, it is a schematic cross-sectional view of a light-emitting device.

[0028] Figures 12 to 14 In Application Example 2 of the embodiment of the present invention, it is a schematic cross-sectional view of a semi-finished light-emitting device, showing the manufacturing process of the light-emitting device.

[0029] Figure 15 In Application Example 2 of the embodiment of the present invention, it is a schematic cross-sectional view of a single light-emitting device.

[0030] Figure 16 In Application Example 2 of the embodiment of the present invention, it is a schematic cross-sectional view of another single light-emitting device.

[0031] Explanation of reference numerals: 100 - optical component; 110 - lower transparent substrate; 112 - upper surface; 114 - lower protective film; 120 - quantum dot thin film unit; 130 - glue material enclosure; 132 - accommodating area; 140 - upper transparent substrate; 142 - upper protective film; 200 - light-emitting device; 205 - protective film; 210 - carrier plate; 220 - light-emitting diode unit; 222 - light-emitting diode chip; 224 - transparent glue material; 226 - bracket; 226a - bottom; 226b - side. Detailed implementation manners

[0032] Refer to Figure 1 As shown, it is a manufacturing method of an optical component 100 provided by the embodiment of the present invention, for manufacturing an optical component 100 with quantum dots.

[0033] As Figure 1 、 Figure 2 And Figure 3 As shown, the method first provides a lower transparent substrate 110, as shown in step S110. The lower transparent substrate 110 has an upper surface 112. Specifically, the lower transparent substrate 110 can be a glass sheet.

[0034] Figure 1 、 Figure 4 And Figure 5 As shown, the method then provides a quantum dot thin film unit 120 and a glue material enclosure 130, and disposes them on the upper surface 112, as shown in step S120. The glue material enclosure 130 surrounds the periphery of the quantum dot thin film unit 120, such that the side surface of the quantum dot thin film unit 120 is covered by the glue material enclosure 130.

[0035] Specifically, step S120 may further include the following sub-steps.

[0036] As Figure 1 、 Figure 2 and Figure 3 shown, first, a glue material enclosure 130 is set on the upper surface 112, and the glue material enclosure 130 is made to surround the accommodation area 132, as shown in step S122. The glue material enclosure 130 is set by coating the glue material along a closed path on the upper surface 112 to form the glue material enclosure 130. The coating method may be spraying. At this time, a heat curing process may be performed on the glue material enclosure 130 so that the glue material enclosure 130 can be shaped and will not deform due to the flow of the glue material. The glue material may be silicone resin, but other polymer resin glue materials are not excluded.

[0037] As Figure 1 、 Figure 4 and Figure 5 shown, then, quantum dot glue is injected into the accommodation area 132 to form a quantum dot thin film unit 120, as shown in step S122. The quantum dot glue may be a glue material including a photo-curing glue and luminescent semiconductor nanoparticles. These particles can be excited by light and perform wavelength conversion on the light so that the wavelength of the light conforms to the expected spectrum, for example, adjusting blue light to white light.

[0038] Specifically, the thickness of the quantum dot glue coating (i.e., the thickness of the quantum dot thin film unit 120) is between 20 and 200 μm, and the material may be a glue material such as a photo-curing glue mixed with nanoparticles that can be coated by dispensing or spraying.

[0039] As Figure 1 、 Figure 6 and Figure 7 shown, an upper transparent substrate 140 is provided to cover the quantum dot thin film unit 120 and the glue material enclosure 130, so that the quantum dot thin film unit 120 and the glue material enclosure 130 are clamped between the lower transparent substrate 110 and the upper transparent substrate 140, as shown in step S130. During this process, a second heat curing may be performed on the glue material enclosure 130 so that the glue material enclosure 130 can adhere to the upper transparent substrate 140, ensuring that both the lower transparent substrate 110 and the upper transparent substrate 140 are bonded to the glue material enclosure 130. At the same time, the thickness of the glue material enclosure 130 can also be thinned under pressure, changing the gap between the lower transparent substrate 110 and the upper transparent substrate 140, so that the quantum dot glue fills the accommodation area 132 without pores. At the same time, UV light is also irradiated on the quantum dot glue for photo-curing, so that the quantum dot thin film unit 120 is shaped and bonded to the lower transparent substrate 110 and the upper transparent substrate 140.

[0040] As Figure 1 、 Figure 8 andFigure 9 As shown, finally, the transparent substrate 110 and the upper transparent substrate 140 are cut to form a lower protective film 114 and an upper protective film 142 corresponding to the quantum dot thin film unit 120. That is, the lower protective film 114 carrying the quantum dot thin film unit 120 and the adhesive wall 130 is cut from the lower transparent substrate 110, and the upper protective film 142 covering the quantum dot thin film unit 120 and the adhesive wall 130 is cut from the upper transparent substrate 140, as shown in step S140. Finally, the optical component 100 including the lower protective film 114, the upper protective film 142, the quantum dot thin film unit 120, and the adhesive wall 130 can be obtained. The process of cutting the lower transparent substrate 110 and the upper transparent substrate 140 can use water jet cutting or laser cutting.

[0041] As Figure 8 and Figure 9 shown, based on the manufacturing method of the above optical component 100, the present invention proposes an optical component 100 with quantum dots, including a lower protective film 114, a quantum dot thin film unit 120, an adhesive wall 130, and an upper protective film 142.

[0042] As Figure 8 and Figure 9 shown, the lower protective film 114 and the upper protective film 142 can be glass sheets or other light-transmitting materials. The quantum dot thin film unit 120 and the adhesive wall 130 are disposed on the lower protective film 114. The adhesive wall 130 surrounds the quantum dot thin film unit 120 and covers the side surface of the quantum dot thin film unit 120. The upper protective film 142 covers the quantum dot thin film unit 120 and the adhesive wall 130, so that the quantum dot thin film unit 120 and the adhesive wall 130 are clamped and disposed between the lower protective film 114 and the upper protective film 142.

[0043] Based on the above quantum dot optical component 100, the quantum dot thin film unit 120 is completely sealed between the upper protective film 142, the adhesive wall 130, and the lower protective film 114. The quantum dot thin film unit 120 is not directly exposed to the air, effectively isolating moisture and air, slowing down the material degradation of the quantum dot thin film unit 120, and thus improving the service life of the quantum dot optical component 100.

[0044] In addition, the quantum dot thin film unit 120 is surrounded and protected by the adhesive wall 130. When cutting the large glass sheet into the lower protective film 114 and the upper protective film 142, the adhesive wall 130 can prevent the quantum dot thin film unit 120 from being affected by the cutting operation. For example, when using water jet cutting, the adhesive wall 130 can prevent the quantum dot thin film unit 120 from being damaged by water impact and prevent water from penetrating into the adhesive of the quantum dot thin film unit 120. Another example is that when using laser cutting, the adhesive wall 130 can prevent the quantum dot thin film unit 120 from being heated by the laser.

[0045] The optical component 100 is used to be combined with a point light source, particularly a light-emitting diode unit 220, and the optical component 100 adjusts the light-emitting characteristics of the light-emitting diode unit 220.

[0046] As Figure 10 or Figure 11 shown, based on the above optical component 100, the present invention proposes a manufacturing method of a light-emitting device 200 having quantum dots, including providing one or more optical components 100 manufactured by the above method. Then, a carrier plate 210 is provided, and the light-emitting diode unit 220 is disposed on the carrier plate 210. Finally, the optical component 100 is disposed on the light-emitting diode unit 220. Between the light-emitting diode unit 220 and the optical component 100, heat curing processing can be performed so that the transparent adhesive material 224 of the light-emitting diode unit 220 binds the light-emitting diode unit 220 and the optical component 100.

[0047] Figure 10 And Figure 11 shown are application examples of different forms of the light-emitting diode unit 220 and the carrier plate 210 respectively.

[0048] As Figure 10 shown is Application Example 1 of the light-emitting device 200. In Application Example 1, the carrier plate 210 is a backlight module substrate or a circuit substrate, and the light-emitting diode unit 220 at least has a light-emitting diode chip 222; the light-emitting diode chip 222 can be, but is not limited to, a blue LED. The light-emitting diode chip 222 is fixedly disposed on the carrier plate 210 through die bonding operations such as surface adhesion and soldering. At the same time, a transparent adhesive material 224 is disposed around the light-emitting diode chip 222 to surround the light-emitting diode chip 222. In the case where the light-emitting device 200 has a plurality of light-emitting diode chips 222, the transparent adhesive material 224 is filled between the light-emitting diode chips 222. When each optical component 100 is disposed on the corresponding light-emitting diode unit 220, at least a part of the lower protective film 114 of the optical component 100 contacts the transparent adhesive material 224. After subsequent heat curing operation on the transparent adhesive material 224, the transparent adhesive material 224 can bind each optical component 100 and the corresponding light-emitting diode unit 220 to obtain the light-emitting device 200 having a plurality of light-emitting diode units 220. The quantum dot thin film unit 120 and the light-emitting diode unit 220 are at least isolated by the lower protective film 114, and the lower protective film 114 can form a relatively high temperature difference between the surface of the light-emitting diode unit 220 and the quantum dot thin film unit 120, thereby preventing the lower surface of the quantum dot thin film unit 120 from directly bearing the high temperature of the light-emitting diode unit 220 and slowing down the degradation of the quantum dot thin film unit 120 due to heat.

[0049] Figure 11Shown is Application Example 2 of the light-emitting device 200. Application Example 2 is a light-emitting device 200 having a single light-emitting diode unit 220. The light-emitting diode unit 220 is temporarily disposed on the carrier board 210. At this time, the carrier board 210 can be a release film or a transfer board that temporarily carries the light-emitting diode unit 220. Each optical component 100 is disposed behind the corresponding light-emitting diode unit 220, and each optical component 100 and the corresponding light-emitting diode unit 220 can be peeled off to form a light-emitting device 200 having a single light-emitting diode unit 220.

[0050] As Figure 12 , Figure 13 and Figure 14 shown, it is the manufacturing process of Application Example 2.

[0051] As Figure 12 shown, first, provide a carrier board 210. The carrier board 210 can be a release film or a transfer board that temporarily carries the light-emitting diode unit 220. The light-emitting diode unit 220 includes a bracket 226, a light-emitting diode chip 222, and a transparent adhesive material 224.

[0052] As Figure 13 shown, then provide one or more brackets 226 and dispose them on the carrier board 210. The bracket 226 can be made of an organic material, such as epoxy resin, or can be made of a metal material.

[0053] As Figure 13 shown, the bracket 226 includes a bottom 226a and a side portion 226b extending from the edge of the bottom 226a. The side portion 226b can surround the bottom 226a so that an accommodation space is formed between the bottom 226a and the side portion 226b. The bottom 226a is used to be disposed on the carrier board 210.

[0054] As Figure 13 shown, provide the light-emitting diode chip 222; wherein, the light-emitting diode chip 222 is fixed to the bottom 226a so that the light-emitting diode chip 222 is indirectly fixed to the carrier board 210 through the bracket 226.

[0055] As Figure 14 shown, provide the transparent adhesive material 224, fill it in the accommodation space of the bracket 226, and cover the light-emitting diode chip 222. Since the bottom 226a and the side portion 226b form a container shape with an accommodation space, the transparent adhesive material 224 can be disposed in the accommodation space through a dispensing operation. When mass-producing the light-emitting device 200, multiple brackets 226 can be arranged in an array on the carrier board 210, and the dispensing operation can be performed simultaneously by multiple dispensing nozzles arranged in an array, and the transparent adhesive material 224 can be sequentially injected into multiple brackets 226 at the same time, thereby achieving the effect of mass production. At this time, the production of multiple light-emitting diode units 220 is completed.

[0056] As Figure 11 shown, finally, each optical component 100 is disposed on each light-emitting diode unit 220, and at least a part of the lower protective film 114 of the optical component 100 is in contact with the transparent adhesive material 224. A thermal curing operation is performed on the transparent adhesive material 224. The transparent adhesive material 224 bonds each optical component 100 and the corresponding light-emitting diode unit 220, obtaining a plurality of light-emitting devices 200 each having a single light-emitting diode unit 220.

[0057] As Figure 15 shown, each light-emitting device 200 can be individually peeled off from the carrier substrate 210 and transferred to a backlight module substrate (such as a PCB or glass) or other circuit substrates for surface adhesion, soldering and other die bonding operations.

[0058] In Application Example 2, the quantum dot film unit 120 is at least isolated by the lower protective film 114 and the transparent adhesive material 224 from the light-emitting diode unit 220. The lower protective film 114 and the transparent adhesive material 224 can form a relatively high temperature difference between the surface of the light-emitting diode chip 222 and the quantum dot film unit 120, thereby preventing the lower surface of the quantum dot film unit 120 from directly bearing the high temperature of the light-emitting diode chip 222 and more effectively slowing down the degradation of the quantum dot film unit 120 due to heat.

[0059] As Figure 16 shown, the light-emitting device 200 of Application Example 2 can be further coated. For example, a protective coating 205 formed of an inorganic material such as SiO2, TiO2 or Al2O3 is formed by atomic layer deposition (ALD), covering the surfaces of the optical component 100 and the light-emitting component 200, and the thickness of the protective coating 205 is between 10 and 500 nm to further isolate the entire light-emitting device 200 from the outside air.

[0060] Through the manufacturing method of the optical component 100 proposed by the present invention, the optical component 100 having quantum dots and the manufacturing method of the light-emitting device 200 having quantum dots, the quantum dot film unit 120 is completely encapsulated between the upper protective film 142, the lower protective film 114 and the adhesive wall 130. The quantum dot film unit 120 is isolated from the outside air and will not be adversely affected during the cutting process, slowing down the material degradation of the quantum dot film unit 120, thereby improving the service life of the quantum dot optical component 100. At the same time, the manufacturing method proposed by the present invention can also mass-produce the optical component 100 and the light-emitting device 200 to maintain the required production capacity.

[0061] The above are only the preferred embodiments of the present invention and are not intended to limit the scope of the present invention claimed. That is, all equivalent changes and modifications made in accordance with the shape, structure, features and spirit defined by the claims of the present invention should be included within the scope of the present invention claimed.

Claims

1. A manufacturing method of an optical component, characterized in that, it includes: providing a lower transparent substrate; wherein, the lower transparent substrate has an upper surface; providing a quantum dot thin film unit and a glue wall, and disposing them on the upper surface; wherein, the glue wall surrounds the quantum dot thin film unit; providing an upper transparent substrate, covering the quantum dot thin film unit and the glue wall, so that the quantum dot thin film unit and the glue wall are clamped between the lower transparent substrate and the upper transparent substrate; and cutting the lower transparent substrate and the upper transparent substrate to form a lower protective film and an upper protective film corresponding to the quantum dot thin film unit, and obtaining the optical component including the lower protective film, the upper protective film, the quantum dot thin film unit and the glue wall.

2. The manufacturing method of the optical component according to claim 1, characterized in that, the step of providing the quantum dot thin film unit and the glue wall includes: disposing the glue wall on the upper surface; wherein, the glue wall surrounds a containing area; and disposing the quantum dot thin film unit in the containing area.

3. The manufacturing method of the optical component according to claim 2, characterized in that, the step of disposing the glue wall includes coating glue on the upper surface according to a closed path to form the glue wall.

4. The manufacturing method of the optical component according to claim 3, characterized in that, it further includes thermally curing the glue.

5. The manufacturing method of the optical component according to claim 4, characterized in that, the step of disposing the quantum dot thin film unit includes injecting quantum dot glue into the containing area, and the quantum dot glue includes a photo-curing glue and luminescent semiconductor nanoparticles.

6. The manufacturing method of the optical component according to claim 5, characterized in that, it further includes, after the upper transparent substrate covers the quantum dot thin film unit and the glue wall, thermally curing the glue wall, and irradiating the quantum dot glue with UV light for photo-curing.

7. The manufacturing method of the optical component according to claim 5, characterized in that, the thickness of the quantum dot glue coating is between 20 and 200 μm.

8. The manufacturing method of the optical component according to claim 1, characterized in that, the method of cutting the lower transparent substrate and the upper transparent substrate is water jet cutting or laser cutting.

9. An optical component, characterized in that, it includes: a lower protective film; a quantum dot thin film unit, disposed on the lower protective film; a glue wall, disposed on the lower protective film; wherein, the glue wall surrounds the quantum dot thin film unit and covers the side surface of the quantum dot thin film unit; and an upper protective film, covering the quantum dot thin film unit and the glue wall, so that the quantum dot thin film unit and the glue wall are clamped and disposed between the lower protective film and the upper protective film.

10. A manufacturing method of a light-emitting device, characterized in that, it includes: manufacturing the optical component according to any one of claims 1 to 8; providing a carrier board; Place the light-emitting diode unit on the carrier board; wherein, the light-emitting diode unit at least has a light-emitting diode chip; and Place the optical component on the light-emitting diode unit.

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