Display device having semiconductor light emitting device

Abstract

A display device having a semiconductor light emitting device according to an embodiment may include a wiring substrate, a semiconductor light emitting device disposed on the wiring substrate, a diffusion layer disposed on the semiconductor light emitting device and including a light scattering material, and a first black layer structure disposed on the diffusion layer and including a transparent layer. A first black layer structure including transparent layers may include one or more transparent layers between a plurality of black layers. A first black layer structure including a transparent layer may include a first black layer, a first transparent layer disposed on the first black layer, and a second black layer disposed on the first transparent layer. A first black layer structure including a transparent layer may include a second transparent layer disposed on a second black layer, and a third black layer disposed on the second transparent layer.

Description

Technical Field

[0001] This embodiment relates to a display device including a semiconductor light-emitting device. Background Art

[0002] Large display devices include liquid crystal displays (LCDs), OLED displays, and Micro-LED displays.

[0003] A Micro-LED display is a display that uses a micro LED (a semiconductor light-emitting device with a diameter or cross-sectional area of 100 μm or less) as a display device.

[0004] Since the Micro-LED display uses a micro semiconductor light-emitting device as a display device, the Micro-LED display has excellent performance in many characteristics such as contrast ratio, response speed, color reproduction rate, viewing angle, brightness, resolution, lifespan, luminous efficiency, or luminance.

[0005] In particular, the Micro-LED display has the advantage of being able to freely adjust the size and resolution and achieve a flexible display because the screen can be separated and combined in a modular manner. In addition, the Micro-LED display is applied not only to televisions but also to digital signage.

[0006] Digital signage is a display installed inside and outside buildings using a digital information display (DID), and is a device that provides images or videos containing advertisements or various information.

[0007] The types of digital signage include outdoor digital signage and indoor digital signage.

[0008] Outdoor digital signage refers to digital signage installed on the outer walls of buildings, electronic signs, etc. or installed outdoors for open-air cinemas. Indoor digital signage refers to digital signage installed on the inner walls of large shopping malls or in the form of signs.

[0009] In digital signage, a micro semiconductor light-emitting diode LED can be used as a display device.

[0010] Meanwhile, the spectral characteristics of a display device (such as digital signage) can be represented by the CIE 1976 Lu'v' color coordinate system. In the CIE 1976 Lu'v' color coordinate system, L represents luminance. If the value of L is 0, it represents black; if the value of L is 100, it represents white.

[0011] In addition, the value of u' indicates whether the color is biased towards red or green. If the value of u' is negative, the color is biased towards green; if the value of u' is positive, the color is biased towards red.

[0012] Moreover, the value of v' indicates whether the color is biased towards yellow or blue. If the value of v' is negative, the color is biased towards blue; if the value of v' is positive, the color is biased towards yellow. The color perspective (i.e., the color difference between various whites) can be expressed as △u'v'@±60°.

[0013] In the internal comparison technology, a light-scattering material is used in the coating layer to improve the color difference between various whites of the Micro LED display, so as to improve the color perspective characteristics.

[0014] However, when adding a light-scattering material to improve the color perspective characteristics in a digital sign, there is a problem of white turbidity, where the light-scattering materials aggregate together and appear white, which deteriorates the black impression or blackness of the digital sign. Here, "black impression" or "blackness" refers to the value that can make black approach the original color. The black impression can be expressed as the L (luminance) value based on the color coordinate system, and the lower the L value, the better the black impression.

[0015] Meanwhile, according to the internal comparison technology, a black film layer is placed on the coating layer to improve the black impression. However, since the black film layer of the internal technology itself has low adhesion, a separate adhesive layer, such as OCA, will be inserted between the coating layer and the black film layer. But the problem is that an adhesive layer such as OCA has low optical transparency.

[0016] In addition, according to the internal comparison technology, before forming the black film layer on the coating layer, a grinding process is performed after the liquid coating layer is cured. However, since the grinding process may cause mechanical damage to the semiconductor light-emitting device, there is a problem that the coating layer cannot be ground to a thickness lower than a predetermined thickness. Additionally, in order to ensure the color perspective, there is a limitation that a coating layer in which a light-scattering material is dispersed is provided on the upper side of the semiconductor light-emitting device with a certain thickness. Therefore, the problem is that due to the presence of the coating layer in which the light-scattering material is dispersed, the black impression may be deteriorated. Summary of the Invention

[0017] One of the technical objectives of this embodiment is to solve the following problem: Even though the diffusion layer in which the light-scattering material is dispersed improves the color perspective characteristics, the diffusion layer also causes the white turbidity phenomenon and reduces the black impression.

[0018] In other words, the technical objective of this embodiment is to provide a coating layer structure for a display device, which can maintain or improve the black impression while improving the color perspective characteristics.

[0019] The technical objectives of the embodiment are not limited to those described herein, and also include the technical objectives that can be understood through the description of the present invention.

[0020] A display device including a semiconductor light-emitting device according to an embodiment may include a wiring substrate 150, a semiconductor light-emitting device 110 disposed on the wiring substrate 150, a diffusion layer 165 disposed on the semiconductor light-emitting device 110 and including a light-scattering material 160, and a first black layer structure 180 disposed on the diffusion layer 165 and including a transparent layer.

[0021] The first black layer structure 180 including a transparent layer may include one or more transparent layers between a plurality of black layers.

[0022] The first black layer structure 180 including a transparent layer may include a first black layer 181a, a first transparent layer 182a disposed on the first black layer 181a, and a second black layer 181b disposed on the first transparent layer 182a.

[0023] The first black layer structure 180 including a transparent layer may include a second transparent layer 182b disposed on the second black layer 181b, and a third black layer 181c disposed on the second transparent layer 182b.

[0024] The thickness T2E of the diffusion layer 165 located on the upper side of the semiconductor light-emitting device 110 may be thinner than the thickness of the semiconductor light-emitting device 110.

[0025] The first black layer structure 180 including a transparent layer may be bonded to the diffusion layer 165 by thermocompression bonding without an adhesive layer.

[0026] In addition, a method of manufacturing a display device including a semiconductor light-emitting device according to an embodiment may include: a step of disposing a semiconductor light-emitting device 110 on a wiring substrate 150; a step of thermocompression bonding a diffusion layer 165 including a light-scattering material 160 to the semiconductor light-emitting device 110 in a semi-cured state; and a step of thermocompression bonding a first black layer structure 180 including a transparent layer to the diffusion layer 165 in a semi-cured state and performing a curing process on the diffusion layer 165 and the first black layer structure 180 including the transparent layer.

[0027] The diffusion layer 165 may be thermocompression bonded and bonded to a wiring substrate on which a semiconductor light-emitting device is disposed in a semi-cured state without an adhesive layer.

[0028] Through the thermocompression process of the diffusion layer 165, the liquid material of the diffusion layer may fill the gap at the bottom of the semiconductor light-emitting device 110.

[0029] The first black layer structure 180 including a transparent layer may be bonded to the diffusion layer 165 by thermocompression bonding without an adhesive layer.

[0030] The first black layer structure 180 including a transparent layer may include one or more transparent layers between a plurality of black layers.

[0031] The first black layer structure 180 including a transparent layer may include a first black layer 181a, a first transparent layer 182a disposed on the first black layer 181a, and a second black layer 181b disposed on the first transparent layer 182a.

[0032] The first black layer structure 180 including a transparent layer may include a second transparent layer 182b disposed on the second black layer 181b, and a third black layer 181c disposed on the second transparent layer 182b.

[0033] The thickness T2E of the diffusion layer 165 located on the upper side of the semiconductor light-emitting device 110 may be thinner than the thickness of the semiconductor light-emitting device 110.

[0034] In addition, a display device including a semiconductor light-emitting device according to an embodiment may include a wiring substrate 150, a semiconductor light-emitting device 110 disposed on the wiring substrate 150, a first diffusion layer 165 disposed on the semiconductor light-emitting device 110 and including a first light-scattering material 160a, and a second black layer structure 180B disposed on the first diffusion layer 165 and including a transparent layer and a diffusion layer.

[0035] The second black layer structure 180B may include a first transparent layer 182a, a second diffusion layer 166 disposed on the first transparent layer 182a, a second transparent layer 182b disposed on the second diffusion layer 166, and a black layer 181 disposed on the second transparent layer 182b.

[0036] In the second diffusion layer 166, a second light-scattering material 160b is dispersed in a matrix, and the matrix may include at least one of an epoxy group, an acrylic group, a silicon group, or a polyurethane group.

[0037] The thickness from the upper side of the semiconductor light-emitting device 110 to the black layer 181 may be thinner than the thickness of the semiconductor light-emitting device 110.

[0038] The second black layer structure 180B including a transparent layer and a diffusion layer may be thermally pressed and bonded to the first diffusion layer 165 in a semi-cured state without an adhesive layer.

[0039] Furthermore, according to an embodiment, a display device including a semiconductor light-emitting device may include a wiring substrate 150, a semiconductor light-emitting device 110 disposed on the wiring substrate 150, a transparent layer 182 disposed on the semiconductor light-emitting device 110, and a third black layer structure 180C disposed on the transparent layer 182 and including a diffusion layer.

[0040] The third black layer structure 180C may include a first diffusion layer 165a and a first black layer 181a disposed on the first diffusion layer 165a.

[0041] The third black layer structure 180C may include a second diffusion layer 165b disposed on the first black layer 181a and a second black layer 181b disposed on the second diffusion layer 165b.

[0042] The thickness from the top of the semiconductor light emitting device 110 to the top of the third black layer structure 180C may be less than or equal to the thickness of the semiconductor light emitting device 110. The third black layer structure 180C including the diffusion layer may be thermally pressed and bonded to the transparent layer 182 in a semi-cured state without an adhesive layer.

[0043] In the third black layer structure 180C, a first thickness Tb1 of the first black layer 181a disposed on the lower side may be thicker than a second thickness Tb2 of the second black layer 181b disposed on the upper side.

[0044] In the third black layer structure 180C, a first thickness Td1 of the first diffusion layer 165a disposed on the lower side may be thicker than a second thickness Td2 of the second diffusion layer 165b disposed on the upper side.

[0045] The display device according to the embodiment includes a semiconductor light emitting device having a black layer structure with a light diffusion function, and the display device may provide a coating layer structure of the display device, which may maintain or improve the black impression while improving the color viewing angle characteristics.

[0046] For example, since the first embodiment may include the first black layer structure 180 having a transparent layer, the second thickness T2 of the diffusion layer 165 may be ensured to be thin. In particular, the second-2 thickness T2E of the diffusion layer 165 on the upper side of the semiconductor light emitting device 110 may be ensured to be thinner than the thickness of the semiconductor light emitting device 110.

[0047] According to the first embodiment, the first black layer structure 180 including the transparent layer causes a scattering effect due to refraction at the interface of each layer, thereby improving the color viewing angle characteristics. In addition, by ensuring that the second thickness T2 of the diffusion layer 165 is thin, a complex technical effect can be achieved, that is, a coating layer structure of a display device that maintains or improves the black impression by reducing the distribution of the scattering material 160 is provided.

[0048] Furthermore, according to the first embodiment, the first black layer structure 180 including the transparent layer without a separate adhesive layer may be bonded to the diffusion layer 165 by thermocompression bonding. Therefore, since an adhesive layer such as OCA can be omitted, there is a technical effect of increasing the front brightness by improving the light transmittance.

[0049] In addition, according to the second embodiment, the second black layer structure 180B including a transparent layer and a diffusion layer causes refraction at the interface of each layer to apply a scattering effect, thereby improving the color viewing angle characteristics. Additionally, by ensuring that the third thickness T3 of the coating layer from the wiring board 150 to the black layer 181 is thin, the distribution of the scattering material can be reduced. Therefore, there is a complex technical effect that a coating layer structure of a display device capable of maintaining or improving the black impression can be provided.

[0050] In addition, according to the second embodiment, the second black layer structure 180B including a transparent layer and a diffusion layer can be thermally pressed and bonded onto the first diffusion layer 165 without a separate adhesive layer. Therefore, since an adhesive layer such as OCA can be omitted, there is a technical effect of increasing the front brightness by improving the light transmittance.

[0051] In addition, according to the third embodiment, the third black layer structure 180C including a diffusion layer causes refraction at the interface of each layer to apply a scattering effect, thereby improving the color viewing angle characteristics. Furthermore, the thickness of the coating layer from the wiring board 150 to the top of the third black layer structure 180C can be ensured to be thin. Therefore, there is a complex technical effect that a coating layer structure of a display device capable of maintaining or improving the black impression by reducing the distribution of the scattering material can be provided.

[0052] Moreover, according to the third embodiment, the third black layer structure 180C including a diffusion layer without a separate adhesive layer can be thermally pressed and bonded onto the transparent layer 182 in a semi-cured state. Therefore, since an adhesive layer such as OCA can be omitted, there is a technical effect of increasing the front brightness by improving the light transmittance.

[0053] In addition, according to the third embodiment, when thermally pressing on the semiconductor light-emitting device 110, the first thickness Tb1 of the first black layer 181a provided on the lower side can be controlled to be thicker than the second thickness Tb2 of the second black layer 181b provided on the upper side. Therefore, there is a technical effect that the change in the black impression around the semiconductor light-emitting device 110 caused by the step due to the semiconductor light-emitting device 110 can be minimized.

[0054] In addition, according to the third embodiment, when thermally pressed and bonded onto the semiconductor light-emitting device 110, the first thickness Td1 of the first diffusion layer 165a provided on the lower side can be controlled to be thicker than the second thickness Td2 of the second diffusion layer 165b provided on the upper side. Therefore, there is a technical effect that the change in the distribution of the scattering material 160 around the semiconductor light-emitting device 110 caused by the step due to the semiconductor light-emitting device 110 can be minimized, thereby ensuring uniform scattering.

[0055] The technical effects of the embodiments are not limited to the technical effects described herein, but also include the technical effects that can be understood through the description of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] The drawings incorporated herein and forming a part of the specification illustrate various non-limiting embodiments of the present invention. In the drawings, like reference numerals represent the same or functionally similar elements.

[0057] Figure 1 is an exemplary diagram of a display device 1000 including a semiconductor light-emitting device for displaying pixels according to an embodiment.

[0058] Figure 2 is a perspective view of one of the plurality of display modules 200 included in the display device 1000 according to an embodiment.

[0059] Figure 3 is a plan view of one display panel 210 included in the display module 200 according to an embodiment.

[0060] Figure 4 is along the line B1-B1' in the display panel 210 according to Figure 3 a cross-sectional view of a semiconductor light-emitting device package taken along the line B1-B1' in the display panel 210 of the illustrated embodiment.

[0061] Figure 5 is a cross-sectional view of a display device 210R including a semiconductor light-emitting device according to an internal comparison technique.

[0062] Figure 6 is a photograph of a coating layer 165 observed with an optical microscope in the display device 210R of the comparison technique.

[0063] Figure 7 is a cross-sectional view of a display device 210A according to a first embodiment.

[0064] Figures 8A to 8C is a cross-sectional process diagram of a manufacturing method of the display device 210A according to a first embodiment.

[0065] Figure 9 is a cross-sectional view of a display device 210B according to a second embodiment.

[0066] Figure 10A and Figure 10B is a cross-sectional view of a display device 210C according to a third embodiment. DETAILED DESCRIPTION

[0067] Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the accompanying drawings. In the following description, the suffixes “module” and “component” of elements are given or used interchangeably for convenience of writing the specification, and they do not have different meanings or functions by themselves. In addition, the accompanying drawings are intended to facilitate understanding of the embodiments disclosed in this specification, and the technical concept disclosed in this specification is not limited by the accompanying drawings. In addition, when an element (such as a layer, a region, or a substrate) is described as being on another element, this includes being directly on the other element or there may be other intermediate elements therebetween.

[0068] The display devices described in this specification may include digital signage, digital TVs, mobile phones, smart phones, laptop computers, digital broadcast terminals, PDAs (Personal Digital Assistants), and PMPs (Portable Multimedia Players), navigators, touchscreen slate PCs, tablet PCs, ultrabooks, or desktop computers, etc. However, the configuration according to the embodiments described in this specification can also be applied to display devices, even for new product types developed in the future.

[0069] Hereinafter, a coating layer structure of a display device according to an example and a display device including the coating layer structure will be described.

[0070] (Embodiment)

[0071] Figure 1 FIG. is an exemplary view of a display device 1000 including a semiconductor light emitting device for displaying pixels according to an embodiment. The display device 1000 according to this embodiment may include a plurality of assembled display modules 200.

[0072] The display device 1000 of this embodiment can be applied to digital signage. For example, Figure 1 FIG. is an example of an indoor digital signage, but the display device 1000 of this embodiment can also be applied to outdoor digital signage.

[0073] Next, Figure 2 FIG. is a perspective view of one of the plurality of display modules 200 included in the display device 1000 according to an embodiment.

[0074] Figure 2 The shown display module 200 can be installed on each cabinet and assembled in a block manner to implement the display device 1000 of this embodiment.

[0075] The display module 200 of this embodiment may include a plurality of display panels 210 that output images, a module bracket 220 on which the display panels 210 are placed, and a module cover provided outside the module bracket 220.

[0076] A plurality of display panels 210 may be arranged on a module bracket 220 in a grid form to form a display module 200, and a single display module 200 may be assembled into a predetermined cabinet shape to implement the display device 1000 according to the present embodiment. Display data may be transmitted to the assembled single display module 200 by wire or wirelessly.

[0077] Figure 3 is a plan view of one display panel 210 included in the display module 200 according to an embodiment.

[0078] Referring to Figure 3 , the display panel 210 according to the present embodiment may include semiconductor light-emitting devices 110 for implementing display pixels of each pixel.

[0079] For example, the semiconductor light-emitting devices 110 for display pixels according to the present embodiment may include a first semiconductor light-emitting device 110a, a second semiconductor light-emitting device 110b, and a third semiconductor light-emitting device 110c, but are not limited thereto.

[0080] Each of the first to third semiconductor light-emitting devices 110a, 110b, and 110c may be repeatedly arranged to form a single sub-pixel. For example, the first to third semiconductor light-emitting devices 110a, 110b, and 110c may be a red light-emitting device, a green light-emitting device, and a blue light-emitting device, respectively, but are not limited thereto.

[0081] The first to third semiconductor light-emitting devices 110a, 110b, and 110c may have dimensions in micrometers (μm). The dimension in micrometers (μm) may mean that the width in at least one light-emitting device is several micrometers to several hundred micrometers.

[0082] Next, Figure 4 is a cross-sectional view of a semiconductor light-emitting device package taken along line B1 - B1' in the display panel 210 according to the embodiment shown in Figure 3 .

[0083] Referring to Figure 4 , each of the first to third semiconductor light-emitting devices 110a, 110b, and 110c may be disposed on a wiring substrate 150. Figure 4 is a cross-sectional view of a semiconductor light-emitting device package in which an adjacent first semiconductor light-emitting device 110a is disposed on a wiring substrate 150.

[0084] For example, a first wiring 151 and a second wiring 152 may be disposed on the wiring substrate 150. The first wiring 151 may be a common wire to which negative (-) power is applied, and the second wiring 152 may be a wire to which positive (+) power is applied, but are not limited thereto.

[0085] The first semiconductor light-emitting device 110a may include a 1-1 semiconductor light-emitting device 110a1 and a 1-2 semiconductor light-emitting device 110a2 that are arranged adjacent to each other.

[0086] Each of the 1-1 semiconductor light-emitting device 110a1 and the 1-2 semiconductor light-emitting device 110a2 may be mounted on the first wiring 151 and the second wiring 152 in a flip-chip form, but is not limited thereto.

[0087] According to this embodiment, the 1-1 semiconductor light-emitting device 110a1 and the 1-2 semiconductor light-emitting device 110a2 mounted on the first wiring 151 and the second wiring 152 may be symmetrically arranged.

[0088] For example, according to this embodiment, the second wire 152 to which positive (+) power is applied and the first wire 151 to which negative (-) power is applied may be symmetrically arranged with respect to each other in adjacent sub-pixels.

[0089] In addition, the n electrodes and p electrodes of the 1-1 semiconductor light-emitting device 110a1 and the n electrodes and p electrodes of the 1-2 semiconductor light-emitting device mounted on the first wiring 151 and the second wiring 152 may be symmetrically arranged, but are not limited thereto.

[0090] Next, Figure 5 is a cross-sectional view of a display device 210R including a semiconductor light-emitting device according to an internal comparison technique.

[0091] Referring to Figure 5 , the comparison technique 210R may include a wiring substrate 150, a semiconductor light-emitting device 110, a diffusion layer 165 including a light-scattering material 160, and a black film layer 170. The semiconductor light-emitting device 110 may include first to third semiconductor light-emitting devices 110a, 110b, and 110c arranged on the wiring substrate 150 in a flip-chip type.

[0092] Figure 6 is a photograph of the diffusion layer 165 observed with an optical microscope in the display device 210R of the comparison technique. For example, Figure 6 may be a photograph of a first region WC of the display device 210R according to the comparison technique shown in Figure 5 , but is not limited thereto.

[0093] Referring to Figure 6 , when aiming to improve the color viewing angle characteristics by adding the light-scattering material 160 to the diffusion layer 165, an aggregation region R where the light-scattering materials gather together appears. When these light-scattering materials gather together to form the aggregation region R, a turbidity phenomenon in which a partial coating layer appears white occurs, and there is a problem of deterioration of the black impression.

[0094] Meanwhile, according to Comparative Technique 210R, a black film layer 170 is disposed on the diffusion layer 165 to improve the black impression. The diffusion layer 165 of the comparative technique is formed by a curing process after liquid coating, and before forming the black film layer 170 on the diffusion layer 165, a grinding process is performed on the cured diffusion layer 165 to make it reach a first thickness T1, thereby flattening the surface.

[0095] However, since the mechanical stress of the grinding process on the diffusion layer 165 can damage the semiconductor light-emitting device 110, grinding the coating layer below the first-second thickness T1R is restricted.

[0096] In addition, to ensure the color viewing angle, there is a limitation that the coating layer 160 (wherein the light-scattering material 165 is dispersed on the upper side of the semiconductor light-emitting device 110) should at least maintain the first-second thickness T1R, which is greater than twice the height of the semiconductor light-emitting device. Therefore, due to the existence of the remaining diffusion layer 165 of the first-second thickness T1R (wherein the light-scattering material 160 is dispersed on the upper side of the semiconductor light-emitting device 110), there are problems of deterioration of the black impression and an increase in the thickness of the display device.

[0097] In addition, since the black film layer 170 of the comparative technique 210R has low adhesion, a separate adhesive layer 172, such as OCA, will be inserted between the diffusion layer 165 and the black film layer 170. However, the adhesive layer 172 (such as OCA) has a problem of deteriorated optical properties due to low optical transparency. In addition, the adhesive layer 172 has high shrinkage / expansion properties due to thermal changes, which reduces the reliability of the coating layer structure.

[0098] Next, Figure 7 is a cross-sectional view of a display device 210A according to the first embodiment.

[0099] Referring to Figure 7 According to the first embodiment, the display device 210A may include a wiring substrate 150, a semiconductor light-emitting device 110, a diffusion layer 165 including a light-scattering material 160, and a first black layer structure 180 including a transparent layer. The first wiring 151 and the second wiring 152 may be formed on the wiring substrate 150, and the bump 125 may be formed on the semiconductor light-emitting device 110, but is not limited thereto.

[0100] The diffusion layer 165 may have a light-scattering material 160 dispersed in a matrix, and the matrix may include an optical coating material, such as epoxy-based, acrylic-based, silicone-based, or polyurethane-based, but is not limited thereto.

[0101] The light-scattering material 160 can improve the light efficiency by scattering the light emitted from the semiconductor light-emitting device 110. The light-scattering material 160 can have a size in nanometers. The light-scattering material 160 can include at least one of Zr, Si, Ti, Zn, BaS, or its oxide. Additionally, the content of the light-scattering material 160 can account for 0.01% to 30% of the matrix.

[0102] The surface of the light-scattering material 160 can be hydrophobized. The light-scattering material 160 undergoes a silanization reaction through surface treatment, and the surface can become hydrophobic. Since the surface of the light-scattering material 160 becomes hydrophobic, the light-scattering materials do not aggregate together, and the dispersibility within the coating layer can also be improved. Therefore, since the light-scattering material 160 is uniformly distributed within the diffusion layer 165, this embodiment has the technical effect of improving light uniformity according to the area.

[0103] Meanwhile, in the comparative technology, a black layer is adopted to improve the black impression. However, in the comparative technology, there is no attempt to consider using a black layer other than a scattering agent for light scattering.

[0104] On the other hand, the first black layer structure 180 including a transparent layer in the first embodiment can include at least one transparent layer located between a plurality of black layers.

[0105] For example, the first black layer structure 180 having a transparent layer can include a first black layer 181a, a first transparent layer 182a disposed on the first black layer 181a, and a second black layer 181b disposed on the first transparent layer 182a. In addition, the first black layer structure 180 including a transparent layer can include a second transparent layer 182b disposed on the second black layer 181b, and a third black layer 181c disposed on the second transparent layer 182b.

[0106] In this embodiment, the first to third black layers 181a, 181b, and 181c can include pigments or dyes capable of generating black in the matrix. For example, the first to third black layers 181a, 181b, and 181c can include carbon black, acetylene black, etc., but are not limited thereto.

[0107] In this embodiment, the matrix of the first to third black layers 181a, 181b, and 181c can include polymer materials such as epoxy-based, acrylic-based, silicon-based, or polyurethane-based, but are not limited thereto.

[0108] The first black layer structure 180 having a transparent layer in the first embodiment can include a transparent layer located between a plurality of black layers; in this way, refraction can occur at the interface of materials with different refractive indices, so refraction can occur at the interface of each layer, thereby exhibiting a scattering effect.

[0109] Therefore, the first embodiment can ensure that the second thickness T2 of the diffusion layer 165 is thin. In particular, it can ensure that the second - second thickness T2E of the diffusion layer 165 located on the upper side of the semiconductor light - emitting device 110 is thinner than the thickness of the semiconductor light - emitting device 110.

[0110] Table 1 below shows the black impression and color viewing angle data of the embodiments and comparative examples.

[0111]

Table 1

[0112] Black impression Color perspective (△u'v'@±60°) Front brightness (nit) Example 23.0 0.002 / 0.003 547 Comparative example 25.0 0.005 / 0.004 531

[0113] If the difference in black impression in the display device is greater than about 0.3, it is a significant difference.

[0114] In the comparative example, the black impression is 25.0, the color viewing angles at plus - minus (±) 60° are 0.005 / 0.004, and the front - face brightness is 531 nit (nit).

[0115] On the other hand, in the present embodiment, the black impression is improved to 23.0, the color viewing angles at plus - minus (±) 60° are respectively improved to 0.002 / 0.003, and the front - face brightness is also improved to 547 nit.

[0116] According to the first embodiment, the first black - layer structure 180 including the transparent layer can cause the refraction at the interface of each layer to exert a scattering effect, thereby improving the color viewing - angle characteristics. In addition, by ensuring that the second thickness T2 of the diffusion layer 165 is thin, the distribution of the scattering material 160 can be reduced. Therefore, there is a complex technical effect that the black impression in the present embodiment can be ensured to be 23.0, which is 2.0 higher than the black impression (25.0) in the comparative example.

[0117] In addition, according to the first embodiment, the first black - layer structure 180 including the transparent layer without a separate adhesive layer can be thermally pressed and bonded onto the diffusion layer 165, so an adhesive layer such as OCA can be omitted. Therefore, there is a technical effect that the front - face brightness increases as the light transmittance increases.

[0118] Figures 8A to 8C is a cross - sectional view of the manufacturing process of the display device 210A according to the first embodiment.

[0119] The display device 210A according to the first embodiment can undergo a curing process in a semi - cured state after thermal pressing, instead of using the liquid coating and curing method in the comparative technology.

[0120] In the following Figures 8A to 8CIn [the description], it is illustrated that the first black layer structure 180 including the transparent layer is laminated in a semi-cured state, and the diffusion layer 165 is subjected to a single hot pressing process, but the embodiment is not limited thereto. For example, in another embodiment, when the first black layer 181a, the first transparent layer 182a, the second black layer 181b, the second transparent layer 182b, and the third black layer 181c are in a semi-cured state, the hot pressing process can be sequentially performed on the diffusion layer 165.

[0121] Referring to Figure 8A , the semiconductor light emitting device 110 can be mounted on the wiring substrate 150.

[0122] After that, the diffusion layer 165 including the light scattering material 160 is prepared in a semi-cured state, and then the wiring substrate 150 on which the semiconductor light emitting device 110 is mounted can be heated to the first temperature H1, and the first hot pressing process P1 can be performed under the first pressure.

[0123] The diffusion layer 165 can have the light scattering material 160 dispersed in the matrix, and the matrix can include an optical coating material such as epoxy-based, acrylic-based, silicone-based, or polyurethane-based, but is not limited thereto.

[0124] The first temperature can be a temperature range at which the diffusion layer 165 melts, and the diffusion layer melted into a liquid phase can fill the bottom and sides of the semiconductor light emitting device 110. In one embodiment, the liquid material of the diffusion layer 165 can fill the gap at the bottom of the semiconductor light emitting device 110 through the hot pressing process of the diffusion layer 165, so that there can be no voids at the bottom of the semiconductor light emitting device 110, thereby improving the reliability.

[0125] The first embodiment can ensure that the second thickness T2 of the diffusion layer 165 is thinner than that of the comparative technique. In particular, it can ensure that the 2-2 thickness T2E of the diffusion layer 165 located on the upper side of the semiconductor light emitting device 110 is thinner than the thickness of the semiconductor light emitting device 110.

[0126] According to the first embodiment, there is a technical effect that, by ensuring that the second thickness T2 of the diffusion layer 165 is thinner, the distribution of the scattering material 160 is reduced to maintain or improve the black impression.

[0127] Next, referring to Figure 8B , after the hot pressing process of the diffusion layer 165, the first black layer structure 180 including the transparent layer laminated in a semi-cured state can be heated to the second temperature H2, and the second hot pressing process P2 can be performed under the second pressure.

[0128] The first black layer structure 180 including a transparent layer may include at least one transparent layer between a plurality of black layers. For example, the first black layer structure 180 including a transparent layer may include a first black layer 181a, a first transparent layer 182a disposed on the first black layer 181a, and a second black layer 181b disposed on the first transparent layer 182a. In addition, the first black layer structure 180 including a transparent layer may include a second transparent layer 182b disposed on the second black layer 181b, and a third black layer 181c disposed on the second transparent layer 182b.

[0129] The matrix of the first to third black layers 181a, 181b, and 181c may include a polymer material such as epoxy-based, acrylic-based, silicone-based, or polyurethane-based, but is not limited thereto.

[0130] The first transparent layer 182a and the second transparent layer 182b may include a polymer material such as epoxy-based, acrylic-based, silicone-based, and polyurethane-based, but is not limited thereto.

[0131] The second temperature may be a temperature range at which the first to third black layers 181a, 181b, and 181c and the first to second transparent layers 182a and 182b melt or a temperature lower than the range. At the second temperature, the first to third black layers 181a, 181b, and 181c and the first to second transparent layers 182a and 182b melted into a liquid state or a semi-cured state may be precisely bonded to the diffusion layer 165.

[0132] According to the first embodiment, the first black layer structure 180 having a transparent layer but not having a separate adhesive layer may be hot-pressed and bonded onto the diffusion layer 165, so that an adhesive layer such as OCA may be omitted, thereby having a technical effect of improving the light transmittance and thus increasing the front luminance.

[0133] Next, referring to Figure 8C , the first black layer structure 180 including the semi-cured diffusion layer 165 and the transparent layer may be cured by heating to a third temperature H3. The first black layer structure 180 having a transparent layer of this embodiment may include a transparent layer between a plurality of black layers; in this way, refraction occurs at the interface of materials having different refractive indices, and thus refraction may occur at the interface of each layer, thereby exhibiting a scattering effect.

[0134] According to the first embodiment, the first black layer structure 180 including a transparent layer may cause refraction at the interface of each layer to exert a scattering effect, thereby improving the color viewing angle characteristics. In addition, by ensuring that the second thickness T2 of the diffusion layer 165 is thin, there is a complex technical effect of providing a coating layer structure of a display device that maintains or improves the black impression by reducing the distribution of the scattering material 160.

[0135] Next, Figure 9 FIG. 210B is a cross-sectional view of a display device according to the second embodiment.

[0136] The second embodiment may adopt the technical features of the first embodiment.

[0137] For example, the display device 210B according to the second embodiment may include a wiring substrate 150, a semiconductor light-emitting device 110, and a first diffusion layer 165 including a first light-scattering material 160a.

[0138] The following description will focus on the main features of the second embodiment.

[0139] The second embodiment may include a second black layer structure 180B, which includes a transparent layer and a diffusion layer on the first diffusion layer 165.

[0140] For example, the second black layer structure 180B may include a first transparent layer 182a, a second diffusion layer 166 provided on the first transparent layer 182a, a second transparent layer 182b provided on the second diffusion layer 166, and a black layer 181 provided on the second transparent layer 182b.

[0141] The second diffusion layer 166 may have a second light-scattering material 160b dispersed in a matrix, and the matrix may include, but is not limited to, optical coating materials such as epoxy-based, acrylic-based, silicone-based, or polyurethane-based.

[0142] The black layer 181 may contain pigments or dyes capable of generating black in the matrix.

[0143] The second black layer structure 180B including a transparent layer and a diffusion layer according to the second embodiment may include a diffusion layer located between a plurality of transparent layers; in this way, refraction occurs at the interface of materials having different refractive indexes, so refraction occurs at the interface of each layer, thereby exhibiting a scattering effect.

[0144] Therefore, the second embodiment can ensure that the third thickness T3 of the coating layer from the wiring substrate 150 to the black layer 181 is thin. In particular, it can ensure that the third thickness T3E from the upper side of the semiconductor light-emitting device 110 to the black layer 181 is thinner than the thickness of the semiconductor light-emitting device 110.

[0145] According to the second embodiment, the second black layer structure 180B including a transparent layer and a diffusion layer causes refraction at the interface of each layer to exert a scattering effect, thereby improving the color viewing angle characteristics. In addition, by ensuring the thin third thickness T3 of the coating layer from the wiring board 150 to the black layer 181, there is a complex technical effect, that is, to provide a coating layer structure of a display device capable of maintaining or improving the black impression by reducing the distribution of the scattering material.

[0146] In addition, according to the second embodiment, the second black layer structure 180B including a transparent layer and a diffusion layer can be thermally pressed and bonded to the first diffusion layer 165 in a semi-cured state without a separate adhesive layer. Since an adhesive layer such as OCA can be omitted, there is a technical effect of increasing the front brightness by improving the light transmittance.

[0147] Next, Figure 10A and Figure 10B is a cross-sectional view of a display device 210C according to the third embodiment.

[0148] The third embodiment may adopt the technical features of the first or second embodiment.

[0149] For example, the display device 210C according to the third embodiment may include a wiring substrate 150 and a semiconductor light-emitting device 110.

[0150] The following description will focus on the main features of the third embodiment.

[0151] The third embodiment may include a third black layer structure 180C, which includes a diffusion layer on a transparent layer.

[0152] For example, the third black layer structure 180C may include a first diffusion layer 165a and a first black layer 181a provided on the first diffusion layer 165a. In addition, the third black layer structure 180C may include a second diffusion layer 165b provided on the first black layer 181a and a second black layer 181b provided on the second diffusion layer 165b.

[0153] The transparent layer may include an optical coating material such as epoxy-based, acrylic-based, silicone-based, or polyurethane-based, but is not limited thereto.

[0154] The first diffusion layer 165a and the second diffusion layer 165b may have a light-scattering material 160 dispersed in a matrix, and the matrix may include an optical coating material such as epoxy-based, acrylic-based, silicone-based, or polyurethane-based, but is not limited thereto.

[0155] The first black layer 181a and the second black layer 181b may contain pigments or dyes capable of producing black in a matrix, and the matrix may include, but is not limited to, optical coating materials such as epoxy-based, acrylic-based, silicone-based, or polyurethane-based.

[0156] The third black layer structure 180C including a diffusion layer in the third embodiment may include a diffusion layer between a plurality of black layers; in this way, refraction occurs at the interface of materials having different refractive indices, so refraction occurs at the interface of each layer, thereby exhibiting a scattering effect.

[0157] Therefore, the third embodiment can ensure that the coating layer from the wiring board 150 to the top of the third black layer structure 180C is thin. In particular, it can ensure that the thickness from the top of the semiconductor light-emitting device 110 to the top of the third black layer structure 180C is less than the thickness of the semiconductor light-emitting device 110.

[0158] According to the third embodiment, the third black layer structure 180C including the diffusion layer causes the refraction at the interface of each layer to exert a scattering effect, thereby improving the color viewing angle characteristics and ensuring that the coating layer from the wiring board 150 to the top of the third black layer structure is thin. Therefore, it has a complex technical effect, that is, to provide a coating layer structure of a display device that maintains or improves the black impression by reducing the distribution of the scattering material.

[0159] In addition, according to the third embodiment, the third black layer structure 180C including the diffusion layer without a separate adhesive layer can be thermally pressed and bonded to the transparent layer 182 in a semi-cured state, so that an adhesive layer such as OCA can be omitted, having the technical effect of increasing the front brightness by improving the light transmittance.

[0160] Furthermore, according to the third embodiment, the transparent layer 182 melted into a liquid state can fill the bottom and sides of the semiconductor light-emitting device 110. For example, the transparent layer may include a lower transparent layer 182f that is gap-filled between the bottom of the semiconductor light-emitting device 110 and the first and second wirings 151. In the third embodiment, the liquid material of the transparent layer is gap-filled to the bottom of the semiconductor light-emitting device 110 through the thermal pressing process of the transparent layer, so that there is no void at the bottom of the semiconductor light-emitting device 110, thereby improving the reliability.

[0161] Furthermore, referring to Figure 10A , in the third black layer structure 180C, the first thickness Tb1 of the first black layer 181a provided on the lower side may be thicker than the second thickness Tb2 of the second black layer 181b provided on the upper side.

[0162] According to the third embodiment, when thermally pressed on the semiconductor light-emitting device 110, the first thickness Tb1 of the first black layer 181a provided on the lower side can be controlled to be thicker than the second thickness Tb2 of the second black layer 181b provided on the upper side. Therefore, it has a technical effect of minimizing the change in the black impression around the semiconductor light-emitting device 110 caused by the step due to the semiconductor light-emitting device 110.

[0163] Furthermore, referring to Figure 10B , in the third black layer structure 180C, the first thickness Td1 of the first diffusion layer 165a provided on the lower side may be thicker than the second thickness Td2 of the second diffusion layer 165b provided on the upper side.

[0164] According to the third embodiment, when hot pressing is performed on the semiconductor light-emitting device 110, it is possible to control the first thickness Td1 of the first diffusion layer 165a provided on the lower side to be thicker than the second thickness Td2 of the second diffusion layer 165b provided on the upper side. Therefore, there is a technical effect that uniform scattering can be ensured by minimizing the distribution change of the scattering material 160 around the semiconductor light-emitting device 110 caused by the step due to the semiconductor light-emitting device 110.

[0165] A display device including a semiconductor light-emitting device according to an embodiment can provide a coating layer structure of the display device, and the coating layer structure can maintain or improve the black impression while improving the color viewing angle characteristics.

[0166] For example, the first embodiment can ensure that the second thickness T2 of the diffusion layer 165 is thin. In particular, it can ensure that the second thickness T2E of the diffusion layer 165 located on the upper side of the semiconductor light-emitting device 110 is thinner than the thickness of the semiconductor light-emitting device 110.

[0167] According to the first embodiment, the first black layer structure 180 having a transparent layer causes refraction at the interface of each layer to apply a scattering effect, thereby improving the color viewing angle characteristics and ensuring that the second thickness T2 of the diffusion layer 165 is thin. Therefore, there is a complex technical effect of providing a coating layer structure of a display device that maintains or improves the black impression by reducing the distribution of the scattering material 160.

[0168] In addition, according to the first embodiment, the first black layer structure 180 including a transparent layer without a separate adhesive layer can be hot-pressed and bonded to the diffusion layer 165, so an adhesive layer such as OCA can be omitted. Therefore, there is a technical effect of increasing the front brightness by improving the light transmittance.

[0169] In addition, due to the second black layer structure including a transparent layer and a diffusion layer, refraction occurs at the interface of each layer to apply a scattering effect, thereby improving the color viewing angle characteristics. In addition, the third thickness T3 of the coating layer from the wiring board 150 to the black layer 181 can be ensured to be thin. Therefore, there is a complex technical effect of providing a coating layer structure of a display device that maintains or improves the black impression by reducing the distribution of the scattering material.

[0170] In addition, according to the second embodiment, the second black layer structure 180B including a transparent layer and a diffusion layer can be hot-pressed and bonded to the first diffusion layer 165 without a separate adhesive layer, so an adhesive layer such as OCA can be omitted, and there is a technical effect of increasing the front brightness by improving the light transmittance.

[0171] In addition, according to the third embodiment, the third black layer structure 180C including the diffusion layer causes refraction at the interface of each layer to apply a scattering effect, thereby improving the color viewing angle characteristics. In addition, it is possible to ensure that the thickness of the coating layer from the wiring board 150 to the top of the third black layer structure 180C is thin. Therefore, there is a complex technical effect of providing a coating layer structure of a display device that maintains or improves the black impression by reducing the distribution of the scattering material.

[0172] In addition, according to the third embodiment, the third black layer structure 180C including the diffusion layer without a separate adhesive layer can be thermally pressed and bonded to the transparent layer 182 in a semi-cured state, so that an adhesive layer such as OCA can be omitted, and there is a technical effect of increasing the front brightness by increasing the light transmittance.

[0173] In addition, according to the third embodiment, when thermally pressed on the semiconductor light-emitting device 110, the first thickness Tb1 of the first black layer 181a provided on the lower side can be controlled to be thicker than the second thickness Tb2 of the second black layer 181b provided on the upper side. Therefore, there is a technical effect of minimizing the change in the black impression around the semiconductor light-emitting device 110 caused by the step due to the semiconductor light-emitting device 110.

[0174] In addition, according to the third embodiment, when thermally pressed on the semiconductor light-emitting device 110, the first thickness Td1 of the first diffusion layer 165a provided on the lower side can be controlled to be thicker than the second thickness Td2 of the second diffusion layer 165b provided on the upper side. Therefore, there is a technical effect of minimizing the distribution change of the scattering material 160 around the semiconductor light-emitting device 110 caused by the step due to the semiconductor light-emitting device 110 to ensure uniform scattering.

[0175] Item 1 proposes a display device having a semiconductor light-emitting device, including:

[0176] A wiring substrate;

[0177] A semiconductor light-emitting device provided on the wiring substrate;

[0178] A diffusion layer provided on the semiconductor light-emitting device and including a light-scattering material; and

[0179] A first black layer structure provided on the diffusion layer and including a transparent layer.

[0180] Item 2. The display device according to Item 1, wherein the first black layer structure including the transparent layer includes one or more transparent layers located between a plurality of black layers.

[0181] Item 3. The display device according to Item 2, wherein the first black layer structure including the transparent layer includes:

[0182] A first black layer;

[0183] A first transparent layer disposed on the first black layer; and

[0184] A second black layer disposed on the first transparent layer.

[0185] Item 4. The display device according to Item 3, wherein the first black layer structure including the transparent layer further includes:

[0186] A second transparent layer disposed on the second black layer; and

[0187] A third black layer disposed on the second transparent layer.

[0188] Item 5. The display device according to Item 1, wherein the thickness of the diffusion layer above the semiconductor light-emitting device is thinner than the thickness of the semiconductor light-emitting device.

[0189] Item 6. The display device according to Item 1, wherein the first black layer structure including the transparent layer is thermally pressed and bonded to the diffusion layer without an adhesive layer.

[0190] Item 7. A method of manufacturing a display device having a semiconductor light-emitting device according to Item 1, including:

[0191] Disposing the semiconductor light-emitting device on the wiring substrate;

[0192] Thermally pressing the diffusion layer provided with the light-scattering material in a semi-cured state onto the semiconductor light-emitting device;

[0193] Thermally pressing the first black layer structure including the transparent layer in a semi-cured state onto the diffusion layer; and

[0194] Performing a curing process on the first black layer structure including the diffusion layer and the transparent layer.

[0195] Item 8. The method of manufacturing a display device according to Item 7, wherein the diffusion layer is thermally pressed and bonded to the wiring substrate in the semi-cured state without an adhesive layer, and the semiconductor light-emitting device is disposed on the wiring substrate.

[0196] Item 9. The method of manufacturing a display device according to Item 7, wherein the liquid material of the diffusion layer is configured to fill a gap at the bottom of the semiconductor light-emitting device through the thermal pressing process of the diffusion layer.

[0197] Item 10. A display device having a semiconductor light-emitting device, comprising:

[0198] A wiring substrate;

[0199] A semiconductor light-emitting device disposed on the wiring substrate;

[0200] A first diffusion layer disposed on the semiconductor light-emitting device and including a first light-scattering material; and

[0201] A second black layer structure disposed on the first diffusion layer and including a transparent layer and a diffusion layer.

[0202] Item 11. The display device according to Item 10, wherein the second black layer structure includes:

[0203] A first transparent layer;

[0204] A second diffusion layer disposed on the first transparent layer;

[0205] A second transparent layer disposed on the second diffusion layer; and

[0206] A black layer disposed on the second transparent layer.

[0207] Item 12. The display device according to Item 11, wherein the second diffusion layer has a second light-scattering material dispersed in a matrix, and the matrix includes at least one of an epoxy group, an acrylic group, a silicon group, or a polyurethane group.

[0208] Item 13. The display device according to Item 10, wherein the thickness from the upper side of the semiconductor light-emitting device to the black layer is thinner than the thickness of the semiconductor light-emitting device.

[0209] Item 14. The display device according to Item 10, wherein the second black layer structure including the transparent layer and the diffusion layer is thermally pressed and bonded to the first diffusion layer in a semi-cured state without an adhesive layer.

[0210] Item 15. A display device having a semiconductor light-emitting device, comprising:

[0211] A wiring substrate;

[0212] A semiconductor light-emitting device disposed on the wiring substrate;

[0213] A transparent layer disposed on the semiconductor light-emitting device; and

[0214] A third black layer structure disposed on the transparent layer and including a diffusion layer.

[0215] Item 16. The display device according to Item 15, wherein the third black layer structure includes:

[0216] The diffusion layer, including a first diffusion layer; and

[0217] A first black layer disposed on the first diffusion layer.

[0218] Item 17. The display device according to Item 16, wherein the third black layer structure further includes:

[0219] A second diffusion layer disposed on the first black layer; and

[0220] A second black layer disposed on the second diffusion layer.

[0221] Item 18. The display device according to Item 16, wherein the thickness from the top of the semiconductor light-emitting device to the top of the third black layer structure is less than or equal to the thickness of the semiconductor light-emitting device.

[0222] Item 19. The display device according to Item 16, wherein the third black layer structure including the diffusion layer is thermally pressed and bonded to the transparent layer in a semi-cured state without an adhesive layer.

[0223] Item 20. The display device according to Item 17, wherein a first thickness of the first black layer is thicker than a second thickness of the second black layer.

[0224] Although the present invention has been described above with reference to the embodiments, those skilled in the art will readily understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the present invention set forth in the following claims.

Claims

1. A display device having a semiconductor light emitting device, comprising: Wiring substrate; A semiconductor light emitting device is disposed on the wiring substrate; a diffusion layer, disposed on the semiconductor light emitting device and comprising a light scattering material; as well as The first black layer structure is disposed on the diffusion layer and includes a transparent layer.

2. The display device according to claim 1, wherein: The first black layer structure including the transparent layer includes one or more transparent layers located between a plurality of black layers.

3. The display device according to claim 2, wherein: The first black layer structure including the transparent layer includes: First black layer; A first transparent layer, disposed on the first black layer; and The second black layer is disposed on the first transparent layer.

4. The display device according to claim 3, wherein: The first black layer structure including the transparent layer further includes: a second transparent layer disposed on the second black layer; and The third black layer is arranged on the second transparent layer.

5. The display device according to claim 1, wherein: The thickness of the diffusion layer above the semiconductor light emitting device is thinner than the thickness of the semiconductor light emitting device.

6. The display device according to claim 1, wherein: The first black layer structure including the transparent layer is heat-pressed and bonded on the diffusion layer without an adhesive layer.

7. A method for manufacturing a display device having a semiconductor light emitting device according to claim 1, comprising: Disposing the semiconductor light emitting device on the wiring substrate; hot pressing the diffusion layer provided with the light scattering material onto the semiconductor light emitting device in a semi-cured state; hot pressing the first black layer structure including the transparent layer onto the diffusion layer in a semi-cured state; as well as A curing process is performed on the first black layer structure including the diffusion layer and the transparent layer.

8. A display device having a semiconductor light emitting device, comprising: Wiring substrate; A semiconductor light emitting device is disposed on the wiring substrate; a first diffusion layer, disposed on the semiconductor light emitting device and comprising a first light scattering material; as well as The second black layer structure is disposed on the first diffusion layer and includes a transparent layer and a diffusion layer.

9. The display device according to claim 8, wherein: The second black layer structure comprises: First transparent layer; a second diffusion layer, disposed on the first transparent layer; a second transparent layer, disposed on the second diffusion layer; and The black layer is arranged on the second transparent layer.

10. A display device having a semiconductor light emitting device, comprising: Wiring substrate; A semiconductor light emitting device is disposed on the wiring substrate; A transparent layer, disposed on the semiconductor light emitting device; as well as The third black layer structure is disposed on the transparent layer and includes a diffusion layer.

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