Light-emitting display device

Abstract

A light emitting display device includes: first to third sub-pixels of different colors; a partition wall extending along a boundary between the first sub-pixel and the second and third sub-pixels and including a suspension structure of a protruding portion; a connection electrode under the protrusion at a boundary of the first sub-pixel; first and light emitting stacks separated by a partition wall, a charge generation layer, and a second electrode; and an intermediate electrode separated by the partition wall and disposed in the first sub-pixel, between the charge generation layer in the first sub-pixel and the second light emitting stack, and connected to the connection electrode, in which the second light emitting stack emits a color of the first sub-pixel, and the first light emitting stack emits a mixed color of the color of the second sub-pixel and the color of the third sub-pixel. The invention can reduce the power consumption and the material cost of the color filter pattern.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2023 - 0191301, filed in Korea on December 26, 2023, the entire content of which is incorporated herein by reference for all purposes as if fully set forth herein. Technical field

[0003] The present invention relates to a light - emitting display device. Background art

[0004] Recently, flat - panel display devices having excellent characteristics such as being thin, light - weight, and low - power consumption have been widely developed and applied to various fields.

[0005] Among these flat - panel display devices, a light - emitting display device including a light - emitting element such as a light - emitting diode is a display device in which charges are injected into a light - emitting layer formed between an anode and a cathode to form electron - hole pairs, and then the electron - hole pairs disappear to emit light.

[0006] Recently, the light - emitting elements of light - emitting display devices are formed in a tandem structure. In this tandem structure, a plurality of light - emitting stacks stacked in the vertical direction emit light simultaneously to generate white light.

[0007] In this case, since all the light - emitting stacks provided in the sub - pixels emit light, there is a problem of high power consumption. Summary of the invention

[0008] An advantage of the present invention is to provide a light - emitting display device that can reduce power consumption and achieve low - power operation when using light - emitting elements having a tandem structure.

[0009] Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The advantages of the present invention will be realized and attained by the structure particularly pointed out in the written description and claims as well as the appended drawings.

[0010] To achieve these and other advantages and in accordance with the purpose of the present invention, as specifically embodied and broadly described herein, a light-emitting display device includes: a substrate including a display area in which first sub-pixels, second sub-pixels, and third sub-pixels of different colors are arranged; first electrodes formed in each of the first sub-pixels, the second sub-pixels, and the third sub-pixels; a partition wall of a hanging structure extending along a boundary between the first sub-pixel and the second and third sub-pixels and including a protruding portion protruding outward; a connection electrode formed below the protruding portion of the partition wall at the boundary of the first sub-pixel; a first light-emitting stack and a second light-emitting stack provided on the first electrode of the first sub-pixel and on the first electrodes of the second sub-pixels and the third sub-pixels, a charge generation layer between the first light-emitting stack and the second light-emitting stack, and a second electrode on the second light-emitting stack, wherein the first light-emitting stack, the second light-emitting stack, the charge generation layer, and the second electrode in the first sub-pixel are separated from the first light-emitting stack, the second light-emitting stack, the charge generation layer, and the second electrode in the second sub-pixel by the partition wall respectively; and an intermediate electrode separated by the partition wall and provided in the first sub-pixel, located between the charge generation layer and the second light-emitting stack in the first sub-pixel and connected to the connection electrode, wherein the second light-emitting stack emits the color of the first sub-pixel, and the first light-emitting stack emits a mixed color of the color of the second sub-pixel and the color of the third sub-pixel.

[0011] In another aspect, a light-emitting display device includes: a substrate including a display area on which a plurality of sub-pixels are arranged; a first electrode formed for each sub-pixel; a partition wall formed along the boundaries of the sub-pixels and including a first partition wall, a second partition wall, and a third partition wall stacked upward, each of the first partition wall, the second partition wall, and the third partition wall having an overhang structure and including a first protrusion, a second protrusion, and a third protrusion protruding outward, respectively; a first connection electrode formed below the first protrusion, a second connection electrode formed on the top surface of the first protrusion, and a third connection electrode formed on the top surface of the second protrusion; and a first light-emitting stack, a second light-emitting stack, and a third light-emitting stack stacked on the first electrode and emitting different colors; a second electrode on the third light-emitting stack; a first charge generation layer between the first light-emitting stack and the second light-emitting stack; a second charge generation layer between the second light-emitting stack and the third light-emitting stack; a first intermediate electrode between the first charge generation layer and the second light-emitting stack; and a second intermediate electrode between the second charge generation layer and the third light-emitting stack, wherein the first to third light-emitting stacks, the first and second charge generation layers, the first and second intermediate electrodes, and the second electrode are separated by the partition wall for each sub-pixel, and wherein the first intermediate electrode, the second intermediate electrode, and the second electrode are connected to the first connection electrode, the second connection electrode, and the third connection electrode, respectively.

[0012] A light-emitting display device includes: a substrate including a display area on which first sub-pixels, second sub-pixels, and third sub-pixels of different colors are arranged; a first electrode formed in each of the first sub-pixels, the second sub-pixels, and the third sub-pixels; a partition wall having an overhang structure extending along the boundaries between adjacent first sub-pixels and adjacent second and third sub-pixels and including a protrusion protruding outward toward the adjacent sub-pixels; a connection electrode formed below the protrusion of the partition wall at the boundary of the first sub-pixel; a first light-emitting stack and a second light-emitting stack provided on the first electrode of the first sub-pixel and the first electrodes of the second sub-pixels and the third sub-pixels, a first charge generation layer provided between the first light-emitting stack and the second light-emitting stack, and a second electrode provided on the second light-emitting stack, wherein the first light-emitting stack, the second light-emitting stack, the first charge generation layer, and the second electrode are separated by the partition wall; and a first intermediate electrode separated by the partition wall and provided in the first sub-pixel, between the charge generation layer in the first sub-pixel and the second light-emitting stack, and connected to the connection electrode.

[0013] It should be understood that the foregoing general description and the following detailed description are both exemplary and explanatory, aiming to further explain the claimed invention of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The drawings included to provide a further understanding of the present disclosure and constituting a part of this application illustrate embodiments of the present disclosure and, together with the description, are used to explain the principles of the present disclosure. In the drawings:

[0015] Figure 1 is a plan view schematically illustrating a light-emitting display device according to a first embodiment of the present invention;

[0016] Figure 2 is a sectional view taken along line II-II' of Figure 1 ;

[0017] Figure 3 is an enlarged sectional view of area A of Figure 2 ;

[0018] Figure 4 is a view schematically illustrating a voltage line for providing a low-potential driving voltage to a display area according to a first embodiment of the present invention;

[0019] Figure 5 is a sectional view schematically illustrating a light-emitting display device according to a second embodiment of the present invention;

[0020] Figure 6 is an enlarged sectional view of area B of Figure 5 ;

[0021] Figure 7 is a plan view schematically illustrating a light-emitting display device according to a third embodiment of the present invention;

[0022] Figure 8 is a sectional view taken along line VIII-VIII' of Figure 7 ;

[0023] Figure 9 is an enlarged sectional view of area C of Figure 8 ;

[0024] Figures 10 to 12 is a diagram illustrating examples of various colors achievable in a sub-pixel using a series structure of light-emitting diodes according to a third embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0025] The advantages and features of the present invention and the methods for realizing them will become apparent with reference to the embodiments described in detail below in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and these embodiments only make the present invention complete. The present invention is provided to fully inform those skilled in the art of the scope of the present invention, and the present invention is only defined by the scope of the claims.

[0026] The shapes, sizes, proportions, angles, quantities, etc. disclosed in the accompanying drawings for explaining the embodiments of the present invention are exemplary, and the present invention is not limited to the content illustrated by way of example. Throughout the specification, the same reference numerals refer to the same components.

[0027] In addition, when describing the present invention, if it is determined that the detailed description of related known technologies will unnecessarily obscure the subject matter of the present invention, the detailed description thereof may be omitted. When using "comprising", "having", "constituting", etc. in this application, other parts may be added unless "only" is used. When a component is represented in the singular form, it includes the case of the plural unless specifically stated.

[0028] When explaining a component, even if there is no separate and explicit description, it is construed to include a margin range.

[0029] In the case of describing a positional relationship, for example, when the positional relationship between two parts is described as "on...", "above...", "below...", "next to...", "under...", etc., one or more other parts may be provided between these two parts unless "exactly" or "directly" is described.

[0030] In the case of describing a time relationship, for example, when the time relationship is described as "after...", "subsequently", "before...", etc., discontinuous cases may be included unless "immediately" or "directly" is used.

[0031] When describing the components of the present invention, terms such as first, second, etc. may be used. These terms are only used to distinguish the components from each other, and the nature, order or quantity of the components is not limited by these terms.

[0032] The respective features of the embodiments of the present invention can be partially or wholly connected or combined with each other, and can be technically interoperable and variously driven, and the respective embodiments can be implemented independently of each other, or can be implemented together in a related relationship.

[0033] Hereinafter, the embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, in the following embodiments, the same and similar components are assigned the same and similar reference numerals, and their detailed descriptions may be omitted.

[0034] <The First Embodiment>

[0035] Figure 1 is a plan view schematically illustrating a light-emitting display device according to a first embodiment of the present invention. Figure 2 is a cross-sectional view taken along line Figure 1 II-II' Figure 3 is an enlarged cross-sectional view of Figure 2 region A, showing a partition wall (or separation wall) and its surroundings.

[0036] Before the detailed description, the light-emitting display device 10 according to an embodiment of the present invention may include all types of display devices that display images by using light-emitting diodes OD as self-luminous elements.

[0037] In this embodiment, for ease of explanation, an organic light-emitting display device is used as an example for the light-emitting display device 10.

[0038] In addition, the light-emitting display device 10 may be a top-emission type display device or a bottom-emission type display device. In this embodiment, for ease of explanation, the top-emission type display device 10 is used as an example.

[0039] Referring to Figures 1 to 3 , in the light-emitting display device 10 (or its light-emitting display panel) of this embodiment, a display area AA for displaying an image and a non-display area NA provided around the display area AA may be defined.

[0040] The display area AA may include a plurality of sub-pixels SP arranged on a substrate 101 along a plurality of row lines (or horizontal lines) and a plurality of column lines (or vertical lines).

[0041] In addition, although not specifically shown, a plurality of gate lines (or scan lines) extending in the row direction (or horizontal direction or first direction) and a plurality of data lines extending in the column direction (or vertical direction or second direction) may be formed on the substrate 101. Each pixel SP may be connected to a corresponding gate line and data line. In addition, a power supply line for transmitting a high-potential driving voltage may be formed on the substrate 101.

[0042] The plurality of sub-pixels SP formed on the substrate 101 may include sub-pixels SP of different colors that constitute a pixel, and a pixel is a unit for displaying a color image. In this regard, for example, the plurality of sub-pixels SP that constitute a pixel are blue (B) sub-pixels SPb, red (R) sub-pixels SPr, and green (G) sub-pixels SPg (or first sub-pixel, second sub-pixel, and third sub-pixel) that respectively display a first color, a second color, and a third color, for example, blue (B), red (R), and green (G). As another example, the plurality of sub-pixels SP that constitute a pixel may further include white (W) sub-pixels that display white light.

[0043] In this embodiment, an example is given where a pixel is composed of an R sub-pixel SPr, a G sub-pixel SPg, and a B sub-pixel SPb.

[0044] The R sub-pixel SPr, the G sub-pixel SPg, and the B sub-pixel SPb can be arranged in various shapes. For example, as Figure 1 shown, the R sub-pixel SPr, the G sub-pixel SPg, and the B sub-pixel SPb can be arranged in a stripe form in which sub-pixels SP of the same color are arranged in the column direction and sub-pixels SP of different colors are alternately arranged in the row direction, but it is not limited thereto.

[0045] Each sub-pixel SP can be provided with a light-emitting diode OD capable of generating white light, for example.

[0046] In this embodiment, the light-emitting diodes OD can be configured in a series structure. In this regard, the light-emitting diodes OD can include a plurality of light-emitting stacks (or light-emitting units) (ST: ST1, ST2), and the plurality of light-emitting stacks can emit two or more different colors that achieve white when mixed.

[0047] In this embodiment, for ease of explanation, the following case is taken as an example: in the light-emitting diode OD, a first light-emitting stack ST1 and a second light-emitting stack ST2, which are two light-emitting stacks, are formed. The first light-emitting stack ST1 and the second light-emitting stack ST2 emit different colors, and white can be generated when the colors emitted from the first light-emitting stack ST1 and the second light-emitting stack ST2 are mixed. In this regard, an example is given where the first light-emitting stack ST1 emits yellow (a mixed color of red and green) and the second light-emitting stack ST2 emits blue.

[0048] In addition, the light-emitting diode OD can include a charge generation layer CGL provided between adjacent light-emitting stacks ST. The charge generation layer CGL is used to reduce the Fermi barrier so that electrons and holes can easily move between adjacent light-emitting stacks ST.

[0049] In addition, the light-emitting diode OD can include an intermediate electrode IE provided between the first light-emitting stack ST1 and the second light-emitting stack ST2. In this way, when the intermediate electrode IE is formed between the light-emitting stacks ST1 and ST2 constituting the light-emitting diode OD, a separate light-emitting current (or drive current) can be applied to the intermediate electrode IE. In other words, a light-emitting current (or second light-emitting current) independent of the light-emitting current (or first light-emitting current) applied to the anode 150 can be applied to the intermediate electrode IE.

[0050] Thus, when a separate emission current is applied to the intermediate electrode IE, the second emission stack ST2 of the emission stack ST of the light-emitting diode OD through which the emission current flows can perform an emission operation independently.

[0051] In this regard, for example, the first emission stack ST1 and the second emission stack ST2 can perform an emission operation together by the emission current applied to the anode 150, and the second emission stack ST2 can perform an emission operation by the emission current applied to the intermediate electrode IE, and the intermediate electrode IE serves as the anode of the second emission stack ST2.

[0052] In this embodiment, for some sub-pixels SP, an emission current can be applied to the intermediate electrode IE of the light-emitting diode OD, and no emission current is applied to the anode 150 of the light-emitting diode OD. In addition, for other sub-pixels SP, no emission current is applied to the intermediate electrode IE of the light-emitting diode OD, and an emission current can be applied to the anode 150 of the light-emitting diode OD.

[0053] In this case, in the sub-pixel SP in which the emission current is applied to the intermediate electrode IE and no emission current is applied to the anode 150, the second emission stack ST2 to which the emission current is applied among the first emission stack ST1 and the second emission stack ST2 is driven, and thus performs an emission operation, and the first emission stack ST1 is not driven, and thus does not perform an emission operation (i.e., is in a light-off state). Thus, since the second emission stack ST2 performs an emission operation independently, the light-emitting diode OD of the sub-pixel SP substantially emits blue light.

[0054] In addition, in the sub-pixel SP in which no emission current is applied to the intermediate electrode IE and an emission current is applied to the anode 150, both the first emission stack ST1 and the second emission stack ST2 are driven to perform an emission operation. Thus, since the first emission stack ST1 and the second emission stack ST2 perform an emission operation together, the light-emitting diode OD of the sub-pixel SP substantially emits white light.

[0055] In this regard, in this embodiment, the B sub-pixel SPb that displays blue is configured such that an emission current is to be applied to the intermediate electrode IE, and the R sub-pixel SPr and the G sub-pixel SPg are configured such that no separate emission current is applied to the intermediate electrode (IE: IEd). Here, the intermediate electrode IE of the R sub-pixel SPr and the G sub-pixel SPg to which no separate emission current is applied substantially serves as (or is referred to as) a virtual intermediate electrode IEd. In other embodiments, the intermediate electrode of the R sub-pixel and / or the G sub-pixel can be a functioning intermediate electrode, and the intermediate electrode of the B sub-pixel can be a virtual intermediate electrode.

[0056] In this case, the intermediate electrode IE of the B sub-pixel SPb to which the light-emitting current is applied and the virtual intermediate electrodes IEd of the R sub-pixel SPr and the G sub-pixel SPg to which no light-emitting current is applied can be physically separated from each other and have a disconnected form.

[0057] For example, the disconnection structure of the intermediate electrode IE and the virtual intermediate electrode IEd can be achieved by a partition wall OH having an overhang structure.

[0058] For example, the partition wall OH having an overhang structure can be provided along the boundary between the B sub-pixel SPb in which the intermediate electrode IE is formed and the adjacent R sub-pixel SPr and G sub-pixel SPg. Thus, the intermediate electrode IE is formed in the B sub-pixel SPb and the virtual intermediate electrodes IEd are formed in the R sub-pixel SPr and the G sub-pixel SPg, so that the intermediate electrode IE and the virtual intermediate electrodes IEd can be physically separated from each other and are in a disconnected state.

[0059] The separation structure of the intermediate electrode IE achieved by the partition wall OH having an overhang structure can be similarly applied to the first light-emitting stack ST1, the second light-emitting stack ST2, and the charge generation layer CGL. Thus, the first light-emitting stack ST1, the second light-emitting stack ST2, and the charge generation layer CGL can be physically separated and disconnected between the B sub-pixel SPb and the adjacent R sub-pixel SPr and G sub-pixel SPg.

[0060] Similarly, the cathode 169 of the light-emitting diode OD can also be physically separated and disconnected between the B sub-pixel SPb and the adjacent R sub-pixel SPr and G sub-pixel SPg by the partition wall OH having an overhang structure.

[0061] In this way, in this embodiment, when using the light-emitting diode OD having a series structure capable of emitting white light, in the B sub-pixel SPb, the second light-emitting stack ST2 that emits blue (the color of the B sub-pixel SPb) is driven alone, and the first light-emitting stack ST1 of a different color provided below the second light-emitting stack ST2 is not driven. In addition, in the R sub-pixel SPr and the G sub-pixel SPg, the first light-emitting stack ST1 that emits yellow (the mixed color of the R sub-pixel SPr and the G sub-pixel SPg) and the second light-emitting stack ST2 that emits blue and is provided on the first light-emitting stack ST1 can be driven simultaneously.

[0062] In this way, it is sufficient for the B sub-pixel SPb to drive the second light-emitting stack ST2 presenting the color of the B sub-pixel SPb, without driving the first light-emitting stack ST1, thereby reducing power consumption.

[0063] In addition, the B sub-pixel SPb can display blue by driving the second light-emitting stack ST2 that generates blue, so that it is not necessary to form a blue color filter pattern in the B sub-pixel SPb. Therefore, the material cost of the color filter pattern can be reduced.

[0064] The planar and cross-sectional structures of the sub-pixel SP of this embodiment will be described in more detail below.

[0065] Together with Figure 1 Refer to Figure 2 And Figure 3 In each sub-pixel SP, a sub-pixel driving circuit including a thin-film transistor T and a light-emitting diode OD can be formed on the substrate 101. Additionally, although not specifically shown, in the sub-pixel driving circuit of the sub-pixel SP, a plurality of thin-film transistors including the thin-film transistor T shown in the figure can be formed, and at least one capacitor can be formed.

[0066] More specifically, the thin-film transistor T can be formed in each sub-pixel SP on the substrate 101. For example, the thin-film transistor T can be connected to the light-emitting diode OD to provide a light-emitting current.

[0067] In this regard, in the B sub-pixel SPb which is the sub-pixel SP where the intermediate electrode IE is applied with a light-emitting current, the light-emitting current can be applied to the intermediate electrode IE through the thin-film transistor T. In addition, since the light-emitting current is not directly provided to the anode 150 of the B sub-pixel SPb, a thin-film transistor connected to the anode 150 to provide a light-emitting current is not provided in the B sub-pixel SPb.

[0068] Furthermore, in each of the R sub-pixel SPr and the G sub-pixel SPg which are the sub-pixels SP provided with the virtual intermediate electrode IEd (the intermediate electrode IE to which a separate light-emitting current is not applied), a light-emitting current can be applied to the anode 150 through a thin-film transistor. In addition, since the light-emitting current is not directly provided to the virtual intermediate electrode IEd of the R sub-pixel SPr and the G sub-pixel SPg, a thin-film transistor connected to the virtual intermediate electrode IEd to provide a light-emitting current is not provided in each of the R sub-pixel SPr and the G sub-pixel SPg.

[0069] Although not specifically shown for ease of illustration, the thin-film transistor T provided in each sub-pixel SP can include a gate electrode, a source electrode, a drain electrode, and a semiconductor layer.

[0070] Here, the semiconductor layer of the thin-film transistor T can be formed of, for example, amorphous silicon, polycrystalline silicon, or an oxide semiconductor material, but is not limited thereto.

[0071] In addition, the thin film transistor may be configured in a coplanar structure (or top gate structure) in which the gate electrode is located on the semiconductor layer and the source electrode and the drain electrode are disposed on the gate electrode, or may be configured in an inverted staggered structure (or bottom gate structure) in which the semiconductor layer is located on the gate electrode and the source electrode and the drain electrode are disposed on the semiconductor layer.

[0072] In addition, a buffer layer made of an insulating material may be formed between the thin film transistor T and the substrate 101.

[0073] A passivation layer 135 may be formed on the thin film transistor T, and the passivation layer 135 may be an insulating layer made of an insulating material.

[0074] The passivation layer 135 may be formed of at least one of an inorganic insulating material such as silicon oxide or silicon nitride and an organic insulating material such as benzocyclobutene or optical acrylic, but is not limited thereto. The passivation layer 135 may be formed in a single-layer structure or a multi-layer structure.

[0075] A drain contact hole CHd exposing the drain electrode of the thin film transistor T may be formed in the passivation layer 135.

[0076] An anode (or first electrode) 150 may be formed on the passivation layer 135 for each sub-pixel SP (or in units of each sub-pixel SP).

[0077] In this regard, the anode 150 of the sub-pixel SP may be substantially integrally formed within the sub-pixel SP and may be formed in a continuous form within the sub-pixel SP. The anode 150 may be physically separated and spaced apart from the anodes 150 of adjacent sub-pixels SP.

[0078] The anodes 150 provided in each of the R sub-pixel SPr and the G sub-pixel SPg may contact the drain electrode of the thin film transistor T through the drain contact hole CHd.

[0079] When the light-emitting display device 10 is a top-emitting type, the anode 150 may include an opaque metal material and may have a high reflection characteristic. For example, the anode 150 may include at least one of Ag, Al, Mo, Ti, and APC (Al-Pd-Cu) alloy, but is not limited thereto.

[0080] In addition, the anode 150 may be formed in a multi-layer structure. In this regard, for example, it may be formed in a multi-layer structure in which a transparent conductive material (e.g., ITO, IZO, IZTO, etc.) is laminated above and / or below the above-mentioned opaque metal material.

[0081] As another example, when the light-emitting display device 10 is a bottom-emitting type, the anode 150 may include a transparent electrode layer and may not include a reflective layer.

[0082] The bank 160 can be formed on the anode 150 and the passivation layer 135 along the boundary of each sub-pixel SP (or the boundary between adjacent sub-pixels SP).

[0083] The bank 160 can be formed to cover the edge of the anode 150 disposed in each sub-pixel SP.

[0084] The bank 160 can be made of, for example, at least one of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide-based resin, a polyimide-based resin, an unsaturated polyester-based resin, a polyphenyl resin, a polyphenylene sulfide-based resin, a benzocyclobutene, and a photoresist, but is not limited thereto.

[0085] The bank 160 can be formed generally along the periphery of each sub-pixel SP to surround the sub-pixel SP and can have an opening OP therein. Through the opening OP, the anode 150 of each sub-pixel SP can be exposed upward.

[0086] A partition wall OH having a hanging structure can be formed on the bank 160. The partition wall OH can be used to separate the elements constituting the light-emitting diode OD.

[0087] Regarding the arrangement of the partition wall OH, for example, the partition wall OH having a hanging structure can be formed on the bank 160 located between the B sub-pixel SPb (the sub-pixel SP in which the intermediate electrode IE is formed) and the R sub-pixel SPr and the G sub-pixel SPg adjacent to the B sub-pixel SPb and in which the virtual intermediate electrode IEd is formed.

[0088] For example, the partition wall OH can be configured to include a first portion OH_1 and a second portion OH_2 located on the first portion OH_1 and having a larger size (or width or area) than the first portion OH_1 to form a hanging structure.

[0089] In this way, the lower first portion OH_1 has a relatively narrow width, and the second portion OH_2 located on the first portion OH_1 has a relatively wide width, so that the second portion OH_2 has a hanging shape that protrudes beyond the first portion OH_1 in two directions. Thus, the partition wall OH of the structure formed by the combination of the first portion OH_1 and the second portion OH_2 can be formed as a hanging structure. Therefore, the second portion OH_2 can have a protruding portion (or hanging portion) PP, which is a portion protruding outward from the first portion OH_1.

[0090] The partition wall OH can be formed to extend, for example, along the column direction, as Figure 1 shown in.

[0091] In this regard, the partition wall OH can be located at the two side boundaries of the B sub-pixel SPb and extend along the column direction, so that the partition wall OH can physically separate the column line region in which the B sub-pixel SPb is arranged from the column line regions in which the R sub-pixel SPr and the G sub-pixel SPg are arranged.

[0092] In other words, in the region between two adjacent partition walls OH on both sides of the B sub-pixel SPb, the B sub-pixel SPb can be set and arranged on one column line. That is to say, in the region between two adjacent partition walls OH on both sides of the combination of the R sub-pixel SPr and the G sub-pixel SPg, the combination of the R sub-pixel SPr and the G sub-pixel SPg can be set and arranged on two column lines.

[0093] As described above, in this embodiment, the partition wall OH of the overhanging structure can be formed to extend in the column direction along the two side boundaries of the B sub-pixel SPb where the intermediate electrode IE is formed. In addition, the partition wall OH may not be formed along the boundary between the R sub-pixel SPr and the G sub-pixel SPg.

[0094] In addition, a connection electrode COE connected to the drain electrode of the thin film transistor T can be formed on the bank 160 at the boundary of the B sub-pixel SPb.

[0095] In this regard, for example, the connection electrode COE can be formed on the top surface (or upper surface) of the bank 160 and can have a shape extending inwardly of the B sub-pixel SPb. The outer portion of the connection electrode COE can be positioned to be covered by the partition wall OH (more specifically, covered by the first portion OH_1).

[0096] In other words, the first portion OH_1 of the partition wall OH can cover the outer portion of the connection electrode COE, and the remaining portion of the connection electrode COE may not be covered by the first portion OH_1, but is located below the protrusion PP of the second portion OH_2 and has a substantially exposed state.

[0097] In addition, in the B sub-pixel SPb, a drain contact hole CHd can be formed in the portion of the bank 160 where the connection electrode COE is formed. In this way, in the B sub-pixel SPb, the drain contact hole CHd can be formed in the passivation layer 135 and the bank 160.

[0098] Therefore, the connection electrode COE can contact the drain electrode of the corresponding thin film transistor T through the drain contact hole CHd.

[0099] A plurality of stacked films can be deposited on the substrate 101 having the partition wall OH and the connection electrode COE to form a light emitting diode OD, so that a light emitting diode OD having a series structure can be formed in the sub-pixel SP.

[0100] In this regard, for example, the light-emitting diode OD may include: a first light-emitting stack ST1 and a second light-emitting stack ST2 stacked upward; a cathode (or second electrode) stacked on the second light-emitting stack ST2; and a charge generation layer CGL stacked between the first light-emitting stack ST1 and the second light-emitting stack ST2. In addition, an intermediate electrode IE may be formed between the charge generation layer CGL and the second light-emitting stack ST2.

[0101] These stacked films constituting the light-emitting diode OD may be formed in a structure separated by a partition wall OH.

[0102] In this regard, the first light-emitting stack ST1 that emits yellow may be separated by the partition wall OH. Accordingly, the first light-emitting stack ST1 of the B sub-pixel SPb may be formed on the anode 150 and the bank 160 of the B sub-pixel SPb. In addition, another first light-emitting stack ST1 separated from the first light-emitting stack ST1 of the B sub-pixel SPb by the partition wall OH may be formed in an integrated (or continuous) form on the anodes 150 and the banks 160 of the R sub-pixel SPr and the G sub-pixel SPg.

[0103] The first light-emitting stack ST1 may include a plurality of organic stacked films to perform a light-emitting function. For example, the first light-emitting stack ST1 may include a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, etc., but is not limited thereto.

[0104] Here, the first light-emitting stack ST1 formed in the B sub-pixel SPb may be formed to expose at least a part of the connection electrode COE located below the partition wall OH (more specifically, below the protrusion PP). In this embodiment, the case where the first light-emitting stack ST1 is formed to cover the end portion of the connection electrode COE is taken as an example.

[0105] Accordingly, when the first light-emitting stack ST1 is formed by deposition, the connection electrode COE may be exposed between the first light-emitting stack ST1 and the partition wall OH.

[0106] The charge generation layer CGL formed on the first light-emitting stack ST1 may also be formed in substantially the same shape as the first light-emitting stack ST1.

[0107] In this regard, the charge generation layer CGL may be separated by the partition wall OH such that the charge generation layer CGL may be formed in the B sub-pixel SPb and may be integrally formed in the R sub-pixel SPr and the G sub-pixel SPg. In addition, similar to the first light-emitting stack ST1, the charge generation layer CGL formed in the B sub-pixel SPb may be formed to expose at least a part of the connection electrode COE located below the partition wall OH and may be formed to cover the end portion of the connection electrode COE.

[0108] Similar to the first light-emitting stack ST1 and the charge generation layer CGL, the intermediate electrode IE formed on the charge generation layer CGL can be formed to be separated by the partition wall OH.

[0109] In this regard, the intermediate electrode IE can be formed on the charge generation layer CGL of the B sub-pixel SPb, and the virtual intermediate electrode IEd can be formed on the charge generation layer CGL of the R sub-pixel SPr and the G sub-pixel SPg. The intermediate electrode IE and the virtual intermediate electrode IEd can be separated from each other by the partition wall OH.

[0110] Here, the intermediate electrode IE of the B sub-pixel SPb is formed to extend over the connection electrode COE and can contact the exposed connection electrode COE. Therefore, in the B sub-pixel SPb, the intermediate electrode IE can be electrically connected to the thin film transistor T via the connection electrode COE. Thus, the light-emitting current flowing through the thin film transistor T can be applied to the intermediate electrode IE via the connection electrode COE.

[0111] In addition, the virtual intermediate electrode IEd provided in the R sub-pixel SPr and the G sub-pixel SPg is configured not to receive a separate light-emitting current. The virtual intermediate electrode IEd is interposed between the first light-emitting stack ST1 and the second light-emitting stack ST2 and basically serves as a conductive layer for electrons and holes to pass through.

[0112] Furthermore, in this embodiment, when forming the intermediate electrode IE and the virtual intermediate electrode IEd, the deposition angle when depositing the metal material for forming the intermediate electrode IE and the virtual intermediate electrode IEd can be set to be smaller than the deposition angle of the material for forming the first light-emitting stack ST1 and the charge generation layer CGL provided below the intermediate electrode IE and the virtual intermediate electrode IEd. Here, the deposition angle is the angle with respect to the surface of the substrate 101.

[0113] In this case, the intermediate electrode IE and the virtual intermediate electrode IEd can be formed to have a larger area than the stacked film located below them.

[0114] Therefore, the intermediate electrode IE and the virtual intermediate electrode IEd are formed to have a larger size (or width) than the first light-emitting stack ST1 and the charge generation layer CGL. Thus, the intermediate electrode IE and the virtual intermediate electrode IEd can have a shape that extends outward (toward the partition wall OH) while substantially covering the first light-emitting stack ST1 and the charge generation layer CGL.

[0115] As a result, the intermediate electrode IE provided in the B sub-pixel SPb can contact the connection electrode COE exposed to the outside of the first light-emitting stack ST1 and can contact the charge generation layer CGL. Thus, the intermediate electrode IE can receive the light-emitting current capable of driving the second light-emitting stack ST2 of the B sub-pixel SPb.

[0116] Similar to the first light-emitting stack ST1 and the charge generation layer CGL, a second light-emitting stack ST2 that is formed on the intermediate electrode IE and the virtual intermediate electrode IEd and emits blue light can be formed to be separated by the partition wall OH.

[0117] In this regard, the second light-emitting stack ST2 of the B sub-pixel SPb can be formed on the intermediate electrode IE of the B sub-pixel SPb. Additionally, another second light-emitting stack ST2 separated from the second light-emitting stack ST2 of the B sub-pixel SPb by the partition wall OH can be formed integrally on the virtual intermediate electrodes IEd of the R sub-pixel SPr and the G sub-pixel SPg.

[0118] The second light-emitting stack ST2 can include a plurality of organic stack films to perform a light-emitting function. For example, similar to the first light-emitting stack ST1, the second light-emitting stack ST2 can include a hole injection layer, a hole transport layer, a light-emitting material layer, an electron transport layer, etc., but is not limited thereto.

[0119] Here, the second light-emitting stack ST2 formed in the B sub-pixel SPb can be formed to have an area smaller than that of the underlying intermediate electrode IE. As another example, the second light-emitting stack ST2 formed in the B sub-pixel SPb can be formed to have an area larger than that of the intermediate electrode IE so as to cover the intermediate electrode IE.

[0120] Additionally, the second light-emitting stack ST2 formed in the R sub-pixel SPr and the G sub-pixel SPg can be formed to have an area smaller than that of the underlying virtual intermediate electrode IEd. As another example, the second light-emitting stack ST2 formed in the R sub-pixel SPr and the G sub-pixel SPg can be formed to have an area larger than that of the virtual intermediate electrode IEd so as to cover the virtual intermediate electrode IEd.

[0121] The size of the second light-emitting stack ST2 on the intermediate electrode IE and the virtual intermediate electrode IEd can be adjusted according to the deposition angle of the second light-emitting stack ST2.

[0122] The cathode 169 formed on the second light-emitting stack ST2 can be formed in a shape similar to that of the second light-emitting stack ST2.

[0123] In this regard, the cathode 169 can be separated by the partition wall OH such that the cathode 169 can be formed in the B sub-pixel SPb and can be formed integrally in the R sub-pixel SPr and the G sub-pixel SPg.

[0124] Here, in terms of preventing short circuits (or contacts) between the cathode 169 and the intermediate electrode IE in the B sub-pixel SPb, and between the cathode 169 and the virtual intermediate electrode IEd in the R sub-pixel SPr and the G sub-pixel SPg, the size (or width) of the cathode 169 can be formed to be equal to or less than the size (or width) of the lower second light-emitting stack ST2.

[0125] In addition, the cathode 169 can have a shape extending along the column direction, that is, the direction in which the partition wall OH extends. In this case, the cathode 169 can further extend into the non-display area NA and can be connected to a voltage line provided in the non-display area NA to receive a low-potential driving voltage. This will be described with reference to Figure 4 .

[0126] Figure 4 is a schematic diagram showing a voltage line for providing a low-potential driving voltage to the display area according to the first embodiment of the present invention.

[0127] Referring to Figure 4 , the voltage line PL can be provided on both sides of the display area AA, for example, provided in Figure 4 the upper and lower non-display areas NA. The voltage line PL can directly receive the low-potential driving voltage Vss output from an external power supply circuit (not shown).

[0128] In this case, the cathode (169:169a) extending along the B sub-pixel SPb in the column direction and the cathode (169:169b) extending along the R sub-pixel SPr and the G sub-pixel SPg in the column direction can straddle the display area AA. One end of each of the cathode (169:169a) and the cathode (169:169b) can be connected to the voltage line PL provided in the upper non-display area NA through a contact hole CHp, and the other end of each of the cathode (169:169a) and the cathode (169:169b) can be connected to the voltage line PL provided in the lower non-display area NA through a contact hole CHp.

[0129] Therefore, the low-voltage driving voltage Vss can be applied to each of the cathode 169a corresponding to the B sub-pixel SPb and the cathode 169b corresponding to the R sub-pixel SPr and the G sub-pixel SPg.

[0130] When the light-emitting display device 10 is a top-emitting type, the cathode 169 can include a transparent electrode layer formed of a transparent conductive material (e.g., ITO, IZO, IZTO, etc.). As another example, when the light-emitting display device 10 is a bottom-emitting type, the cathode 169 can include a reflective layer formed of a metal.

[0131] As described above, by using the partition wall OH, the first light-emitting stack ST1, the charge generation layer CGL, the intermediate electrode IE, the second light-emitting stack ST2, and the cathode 169 can be separated.

[0132] Accordingly, in the B sub-pixel SPb, a yellow first light-emitting stack ST1, a charge generation layer CGL, an intermediate electrode IE, a blue second light-emitting stack ST2, and a cathode 169 that are stacked in a pattern on the anode 150 through the partition wall OH can be formed, and the intermediate electrode IE can be in contact with the connection electrode COE and receive a light-emitting current for driving the second light-emitting stack ST2 from the corresponding thin-film transistor T. Accordingly, the light-emitting current flows through the second light-emitting stack ST2, causing the light-emitting diode OD to emit and output blue light.

[0133] In the R sub-pixel SPr and the G sub-pixel SPg, a yellow first light-emitting stack ST1, a charge generation layer CGL, a virtual intermediate electrode IEd, a blue second light-emitting stack ST2, and a cathode 169 that are stacked in a pattern on the anode 150 through the partition wall OH can be formed, and the anode 150 of each of the R sub-pixel SPr and the G sub-pixel SPg can be connected to the corresponding thin-film transistor T and receive a light-emitting current for driving the first light-emitting stack ST1 and the second light-emitting stack ST2 together. Accordingly, the light-emitting current flows through the first light-emitting stack ST1 and the second light-emitting stack ST2, causing the light-emitting diode OD to emit and output white light, which is a mixture of yellow light and blue light.

[0134] In this way, in this embodiment, the B sub-pixel SPb can emit blue light by separately driving the blue second light-emitting stack ST2 that the B sub-pixel SPb desires to exhibit, and each of the R sub-pixel SPr and the G sub-pixel SPg can emit white light by driving the yellow first light-emitting stack ST1 and the blue second light-emitting stack ST2 together.

[0135] In addition, as described above, the intermediate electrode IE patterned by the partition wall OH can be continuously formed along the B sub-pixels SPb arranged in the same column line. In this case, between adjacent B sub-pixels SPb along the column line, the leakage current caused by the intermediate electrode IE is small enough to be practically negligible. Accordingly, crosstalk due to the leakage current between adjacent B sub-pixels SPb is not actually recognized, and image distortion due to the leakage current does not occur.

[0136] The encapsulation layer 170 can be formed substantially over the entire surface of the substrate 101 having the cathode 169 separated by the partition wall OH having a hanging structure.

[0137] The encapsulation layer 170 can be used to improve reliability by blocking the penetration of moisture or oxygen from the outside.

[0138] Moreover, the encapsulation layer 170 can planarize the substrate 101 having the cathode 169.

[0139] The encapsulation layer 170 can be formed as a single-layer structure or a multi-layer structure using at least one of an inorganic insulating material and an organic insulating material.

[0140] A color filter layer CF can be formed on the encapsulation layer 170. The color filter layer CF can include a red color filter pattern CFr and a green color filter pattern CFg that are respectively provided corresponding to the R sub-pixel SPr and the G sub-pixel SPg and generate red and green colors respectively.

[0141] Moreover, the color filter layer CF can include a transparent pattern CFt having a transparent property that is provided corresponding to the B sub-pixel SPb.

[0142] In this regard, as described above, each of the light-emitting diodes OD of the R sub-pixel SPr and the G sub-pixel SPg emits white light as a mixed color through the light-emitting operations of the first light-emitting stack ST1 and the second light-emitting stack ST2. Thus, the red color filter pattern CFr and the green color filter pattern CFg can be respectively provided in the R sub-pixel SPr and the G sub-pixel SPg to exhibit red and green, which are the colors of the R sub-pixel SPr and the G sub-pixel SPg.

[0143] In addition, the light-emitting diode OD of the B sub-pixel SPb emits blue because the yellow first light-emitting stack ST1 turns off its light-emitting operation and the blue second light-emitting stack ST2 turns on its light-emitting operation. Thus, it is not necessary to provide a blue color filter pattern in the B sub-pixel SPb to exhibit the color of the B sub-pixel SPb.

[0144] Therefore, a transparent pattern CFt having a transparent property that can directly transmit the blue light emitted from the light-emitting diode OD can be provided for the B sub-pixel SPb.

[0145] In this way, for the B sub-pixel SPb, by forming the transparent pattern CFt instead of forming the corresponding color filter pattern, the cost of the color filter pattern material can be reduced.

[0146] In addition, as described above, in the B sub-pixel SPb, among the first light-emitting stack ST1 and the second light-emitting stack ST2 that constitute the light-emitting diode OD, the second light-emitting stack ST2 that emits the color corresponding to the B sub-pixel SPb is independently driven, and the first light-emitting stack ST1 of a different color is not driven, so that the power consumption can be reduced.

[0147] In addition, an overcoat layer 180 can be formed on the color filter layer CF to cover and protect the color filter layer CF. The substrate 101 having the overcoat layer 180 can have a substantially flat surface.

[0148] <Second Embodiment>

[0149] Figure 5 is a cross-sectional view schematically illustrating a light-emitting display device according to a second embodiment of the present invention. Figure 6 is an enlarged Figure 5 cross-sectional view of region B, showing the partition wall and its surroundings.

[0150] In the following description, the detailed description of the same or similar structures as those in the foregoing first embodiment may be omitted.

[0151] Referring to Figure 5 and Figure 6 , similar to the first embodiment, the light-emitting display device 10 of this embodiment includes light-emitting diodes OD in a series structure, and two light-emitting stacks ST1, ST2 constituting the light-emitting diodes OD can be separated by a partition wall OH provided along both side boundaries of the B sub-pixel SPb.

[0152] In the separation structure, for the B sub-pixel SPb, a light-emitting current is applied to the intermediate electrode IE and the light-emitting current is turned off for the anode 150. Thus, the second light-emitting stack ST2 that emits blue (the color of the B sub-pixel SPb) is driven independently, and the first light-emitting stack ST1 of a different color disposed below the second light-emitting stack ST2 is not driven (i.e., in a light-emitting off state). In addition, for the R sub-pixel SPr and the G sub-pixel SPg, a light-emitting current is applied to the anode 150 and the light-emitting current is turned off for the virtual intermediate electrode IEd. Thus, the first light-emitting stack ST1 that emits yellow (the mixed color of the R sub-pixel SPr and the G sub-pixel SPg) and the second light-emitting stack ST2 that emits blue and is disposed on the first light-emitting stack ST1 can be driven simultaneously.

[0153] In addition, in this embodiment, in order to improve the blue light-emitting characteristics of the light-emitting diode OD, a plurality of second light-emitting stacks ST2 that emit blue can be stacked. In this embodiment, for ease of explanation, it is exemplified by stacking two second light-emitting stacks (ST2: ST2_1 and ST2_2). The lower second light-emitting stack ST2 may be referred to as the second-one (or 2-1) light-emitting stack ST2_1, and the upper second light-emitting stack ST2 may be referred to as the second-two (or 2-2) light-emitting stack ST2_2.

[0154] In this regard, the blue light-emitting material layer has low lifetime and efficiency. To improve this, in this embodiment, by providing a plurality of second light-emitting stacks ST2 in the series-structured light-emitting diode OD, the lifetime and efficiency of blue can be improved.

[0155] The second-first light-emitting stack ST2_1 and the second-second light-emitting stack ST2_2 stacked one above the other can be separated by the partition wall OH of the hanging structure, and can be divided into a B sub-pixel SPb and R sub-pixels SPr and G sub-pixels SPg. The light-emitting stacks ST2_1 and ST2_2 can generally have the same planar shape and cross-sectional shape.

[0156] Between the light-emitting stacks ST2_1 and ST2_2, a charge generation layer (or second charge generation layer) (CGL: CGL 2) having a structure separated by the partition wall OH can be provided.

[0157] In addition, as in the first embodiment, a charge generation layer (or first charge generation layer) (CGL: CGL1) and an intermediate electrode IE each having a structure separated by the partition wall OH can be provided between the first light-emitting stack ST1 and the second-first light-emitting stack ST2_1.

[0158] Here, in the B sub-pixel SPb, the intermediate electrode IE can be formed to be in contact with the connection electrode COE. In the R sub-pixels SPr and G sub-pixels SPg, a virtual intermediate electrode IEd separated from the intermediate electrode IE can be provided.

[0159] In addition, a cathode 169 having a structure separated by the partition wall OH can be formed on the second-second light-emitting stack ST2_2.

[0160] An encapsulation layer 170 can be formed on the cathode 169, and a color filter layer CF can be formed on the encapsulation layer 170.

[0161] Similar to the first embodiment, the color filter layer CF can include a red color filter pattern CFr and a green color filter pattern CFg respectively provided corresponding to the R sub-pixels SPr and G sub-pixels SPg, and a transparent pattern CFt provided corresponding to the B sub-pixel SPb.

[0162] As described above, in this embodiment, a plurality of second light-emitting stacks ST2 that emit blue light can be stacked in the series-connected light-emitting diode OD. Therefore, the blue lifetime and efficiency can be increased, and thus the blue light-emitting characteristics of the light-emitting diode OD can be improved.

[0163] <Third Embodiment>

[0164] Figure 7 is a plan view schematically illustrating a light-emitting display device according to the third embodiment of the present invention. Figure 8 is along Figure 7 a cross-sectional view taken along line VIII-VIII'. Figure 9 is an enlarged Figure 8 cross-sectional view of region C.

[0165] In the following description, the detailed description of the same or similar configurations as those of the foregoing first or second embodiments may be omitted.

[0166] Referring to Figures 7 to 9 , different from the first or second embodiments, the light-emitting display device 10 of this embodiment may be configured such that a plurality of light-emitting stacks ST of light-emitting diodes OD constituting a series structure formed in each sub-pixel SP can be individually driven and combinedly driven.

[0167] In this regard, the light-emitting diodes OD of the series structure provided in each sub-pixel SP may include three or more light-emitting stacks (ST: STr, STg, STb) that are sequentially stacked in the vertical direction, can be individually driven, and emit different colors.

[0168] In this embodiment, for ease of explanation, the case where the light-emitting diode OD of each sub-pixel SP is composed of three light-emitting stacks ST, for example, an R light-emitting stack STr, a G light-emitting stack STg, and a B light-emitting stack STb (or a first light-emitting stack, a second light-emitting stack, and a third light-emitting stack) that respectively emit red, green, and blue is taken as an example. In addition, the case where they are stacked upward in the order of the R light-emitting stack STr, the G light-emitting stack STg, and the B light-emitting stack STb is taken as an example. Additionally, the stacking order of the R light-emitting stack STr, the G light-emitting stack STg, and the B light-emitting stack STb may be changed according to circumstances (or requirements).

[0169] Each of the R light-emitting stack STr, the G light-emitting stack STg, and the B light-emitting stack STb can receive a light-emitting current and emit light individually (or emit light alone). Moreover, a light-emitting current can be applied to two or more adjacent light-emitting stacks ST among the R light-emitting stack STr, the G light-emitting stack STg, and the B light-emitting stack STb, so that combined (or mixed) light emission can be performed.

[0170] In this way, the R light-emitting stack STr, the G light-emitting stack STg, and the B light-emitting stack STb forming the light-emitting diode OD of each sub-pixel SP can emit light individually or in combination, so that each sub-pixel SP can emit the individual colors of each light-emitting stack ST and the mixed color of the combined light-emitting stacks ST.

[0171] Therefore, each sub-pixel SP is not limited to an area that emits a specific color, but can be used as an area capable of emitting various colors as needed, thereby maximizing the color image display performance of the light-emitting display device 10.

[0172] In addition, since the light-emitting stacks ST of each sub-pixel SP can perform individual light emission and combined light emission, the power consumption is reduced and low-power driving is possible.

[0173] In addition, since there is no need to form a specific color filter pattern in each sub-pixel SP, there is no need to form a color filter layer, which can minimize the material cost of the color filter pattern.

[0174] The planar and cross-sectional structures of the sub-pixel SP of this embodiment will be described in more detail below.

[0175] Together with Figure 7 referring together to Figure 8 and Figure 9 , in each sub-pixel SP, a sub-pixel driving circuit including thin film transistors T1 to T4 and a light emitting diode OD can be formed on the substrate 101. Additionally, although not specifically shown, in the sub-pixel driving circuit of each sub-pixel SP, a plurality of thin film transistors including thin film transistors T1 to T4 as shown can be formed, and at least one capacitor can be formed.

[0176] More specifically, a plurality of thin film transistors T1 to T4, for example, first to fourth thin film transistors T1 to T4, can be formed in each sub-pixel SP on the substrate 101.

[0177] In this regard, for example, the first thin film transistor T1 can be connected to the anode 150 of the light emitting diode OD to provide a corresponding light emitting current. Additionally, the second thin film transistor T2 can be connected to the first intermediate electrode IE1 of the light emitting diode OD to provide a corresponding light emitting current. Additionally, the third thin film transistor T3 can be connected to the second intermediate electrode IE2 of the light emitting diode OD to provide a corresponding light emitting current. Moreover, the fourth thin film transistor T4 can be connected to the cathode 169 of the light emitting diode OD to provide a corresponding low potential driving voltage.

[0178] By controlling the connection state (i.e., the on / off state) between the first to fourth thin film transistors T1 to T4 and the corresponding electrodes, the driving modes (e.g., individual driving, combined driving, etc.) of the first to third light emitting stacks STr, STg, STb can be adjusted.

[0179] For example, when the first thin-film transistor T1 and the second thin-film transistor T2 are turned on (and the third thin-film transistor T3 and the fourth thin-film transistor T4 are turned off), a light-emitting current path is generated between the anode 150 and the first intermediate electrode IE1, such that the R light-emitting stack STr between the anode 150 and the first intermediate electrode IE1 can emit light. Additionally, when the second thin-film transistor T2 and the third thin-film transistor T3 are turned on (and the first thin-film transistor T1 and the fourth thin-film transistor T4 are turned off), a light-emitting current path is generated between the first intermediate electrode IE1 and the second intermediate electrode IE2, such that the G light-emitting stack STg between the first intermediate electrode IE1 and the second intermediate electrode IE2 can emit light. Additionally, when the third thin-film transistor T3 and the fourth thin-film transistor T4 are turned on (and the first thin-film transistor T1 and the second thin-film transistor T2 are turned off), a light-emitting current path is generated between the second intermediate electrode IE2 and the cathode 169, such that the B light-emitting stack STb between the second intermediate electrode IE2 and the cathode 169 can emit light.

[0180] Furthermore, when the first thin-film transistor T1 and the third thin-film transistor T3 are turned on (and the second thin-film transistor T2 and the fourth thin-film transistor T4 are turned off), a light-emitting current path is generated between the anode 150 and the second intermediate electrode IE2, such that the R light-emitting stack STr and the G light-emitting stack STg between the anode 150 and the second intermediate electrode IE2 can emit light together. Additionally, when the second thin-film transistor T2 and the fourth thin-film transistor T4 are turned on (and the first thin-film transistor T1 and the third thin-film transistor T3 are turned off), a light-emitting current path is generated between the first intermediate electrode IE1 and the cathode 169, such that the G light-emitting stack STg and the B light-emitting stack STb between the first intermediate electrode IE1 and the cathode 169 can emit light together.

[0181] Furthermore, when the first thin-film transistor T1 and the fourth thin-film transistor T4 are turned on (and the second thin-film transistor T2 and the third thin-film transistor T3 are turned off), a light-emitting current path is generated between the anode 150 and the cathode 169, such that the R light-emitting stack STr, the G light-emitting stack STg, and the B light-emitting stack STb between the anode 150 and the cathode 169 can emit light together.

[0182] Additionally, each of the first to fourth thin-film transistors T1 to T4 provided in each sub-pixel SP may include a gate electrode, a source electrode, a drain electrode, and a semiconductor layer.

[0183] Herein, the semiconductor layer of each of the first to fourth thin-film transistors T1 to T4 may be formed of, for example, amorphous silicon, polycrystalline silicon, or an oxide semiconductor material, but is not limited thereto.

[0184] In addition, each of the first to fourth thin film transistors T1 to T4 may have a coplanar structure or an inverted staggered structure.

[0185] A passivation layer 135, which is an insulating layer formed of an insulating material, may be formed on the thin film transistors T1 to T4. The passivation layer 135 may be formed as a single-layer structure or a multi-layer structure.

[0186] In the passivation layer 135, first to fourth drain contact holes CHd1 to CHd4 may be formed to expose the drain electrodes of the first to fourth thin film transistors T1 to T4, respectively.

[0187] An anode 150 may be formed on the passivation layer 135 for each sub-pixel SP (or in units of each sub-pixel SP).

[0188] The anode 150 may contact the drain electrode of the first thin film transistor T1 through the first drain contact hole CHd1.

[0189] A bank 160 may be formed on the anode 150 and the passivation layer 135 along the boundary of each sub-pixel SP (or the boundary between adjacent sub-pixels SP).

[0190] The bank 160 may be formed to cover the edge of the anode 150 provided in each sub-pixel SP.

[0191] The bank 160 may be substantially formed to surround the sub-pixel SP along the perimeter of each sub-pixel SP and may have a first opening OP1 therein. Through the first opening OP1, the anode 150 of each sub-pixel SP may be exposed upward.

[0192] A partition wall MOH having an overhanging structure may be formed on the bank 160. The partition wall MOH may be used to separate the elements constituting the light emitting diode OD.

[0193] In this regard, in the above-described first embodiment, as Figure 2 and Figure 3 shown, a partition wall OH having a one-stage (or one-step) overhanging structure may be formed to extend along the two side boundaries of the B sub-pixel SPb.

[0194] In contrast, in this embodiment, a partition wall MOH having a multi-stage (or multi-step) overhanging structure may be formed along the boundary of each sub-pixel SP and surrounding the sub-pixel SP. Here, in this embodiment, for ease of explanation, the case where the partition wall MOH is formed as a three-stage overhanging structure is taken as an example.

[0195] The partition wall MOH having a three-stage overhanging structure may be formed on the bank 160 and have a second opening OP2 corresponding to the first opening OP1 of the bank 160.

[0196] The dividing wall MOH may include a first dividing wall (or first separator) MOH1 of a hanging structure stacked on the dike portion 160, a second dividing wall (or second separator) MOH2 of a hanging structure stacked on the first dividing wall MOH1, and a third dividing wall (or third separator) MOH3 of a hanging structure stacked on the second dividing wall MOH2.

[0197] The overall shape of the first to third dividing walls MOH1 to MOH3 (i.e., the overall shape of the dividing wall MOH) may be in the form of a three - level overhang whose width increases upward.

[0198] For example, the first dividing wall MOH1 implementing the first - level overhang structure may be configured to include a first part (or first - one part) MOH1_1 and a second part (or first - two parts) MOH1_2 located on the first part MOH1_1 and having a larger size (or width or area) than the first part MOH1_1.

[0199] In this way, the first dividing wall MOH1 of the structure formed by the combination of the first part MOH1_1 and the second part MOH1_2 having a width wider than the first part MOH1_1 and protruding outward can be formed into an overhang structure. Thus, the second part MOH1_2 may have a first protrusion PP1 protruding outward from the first part MOH1_1.

[0200] The second dividing wall MOH2 implementing the second - level overhang structure may be configured to include a first part (or second - one part) MOH2_1 and a second part (or second - two parts) MOH2_2 located on the first part MOH2_1 and having a larger size (or width or area) than the first part MOH2_1.

[0201] In this way, the second dividing wall MOH2 of the structure formed by the combination of the first part MOH2_1 and the second part MOH2_2 having a width wider than the first part MOH2_1 and protruding outward can be formed into an overhang structure. Thus, the second part MOH2_2 may have a second protrusion PP2 protruding outward from the first part MOH2_1.

[0202] Here, the second protrusion PP2 of the second part MOH2_2 of the second dividing wall MOH2 may extend and protrude more outward than the first protrusion PP1 of the second part MOH1_2 of the first dividing wall MOH1 located at a lower level than the second dividing wall MOH2.

[0203] In addition, the first part MOH2_1 of the second dividing wall MOH2 may have a width equal to or greater than the width of the first part MOH1_1 of the first dividing wall MOH1.

[0204] The third partition wall MOH3 implementing the third-level overhang structure can be configured to include a first part (or third-first part) MOH3_1 and a second part (or third-second part) MOH3_2 located on the first part MOH3_1 and having a size (or width or area) larger than that of the first part MOH3_1.

[0205] In this way, the third partition wall MOH3 of the structure formed by the combination of the first part MOH3_1 and the second part MOH3_2 having a width wider than that of the first part MOH3_1 and protruding outward can be formed into an overhang structure. Therefore, the second part MOH3_2 can have a third protrusion PP3 protruding outward from the first part MOH3_1.

[0206] Here, the third protrusion PP3 of the second part MOH3_2 of the third partition wall MOH3 can extend and protrude more outward than the second protrusion PP2 of the second part MOH2_2 of the second partition wall MOH2 located at a lower level than the third partition wall MOH3.

[0207] In addition, the first part MOH3_1 of the third partition wall MOH3 can have a width equal to or greater than the width of the first part MOH2_1 of the second partition wall MOH2.

[0208] As described above, the partition wall MOH having a multi-level overhang structure can be configured in a form in which the width of the overhang structure increases upward.

[0209] By using the partition wall MOH of the multi-level overhang structure in this way, the stacked films of the light-emitting diodes OD constituting the series structure can be physically separated and patterned according to the sub-pixels SP.

[0210] In addition, similar to the first embodiment, a first connection electrode COE1 connected to the drain electrode of the second thin-film transistor T2 can be formed on the bank 160 located at the boundary of each sub-pixel SP.

[0211] In this regard, for example, the first connection electrode COE1 can be formed on the top surface of the bank 160 and can have a shape extending toward the inside of each sub-pixel SP. The outer part of the first connection electrode COE1 can be positioned to be covered by the first partition wall MOH1 (more specifically, covered by the first part MOH1_1).

[0212] In this way, the first connection electrode COE1 can be exposed below the first protrusion PP1 of the first partition wall MOH1.

[0213] The first connection electrode COE1 can contact the drain electrode of the second thin-film transistor T2 through a second drain contact hole CHd2 formed in the passivation layer 135 and the bank 160.

[0214] In addition, similar to the first connection electrode COE1, a second connection electrode COE2 connected to the drain electrode of the third thin-film transistor T3 may be formed on the top surface of the first partition wall MOH1 (more specifically, on the top surface of the second portion MOH1_2).

[0215] In this regard, for example, the second connection electrode COE2 may be formed on the top surface of the first partition wall MOH1 and may have a shape extending along the first protrusion PP1 toward the inside of each sub-pixel SP. The outer portion of the second connection electrode COE2 may be positioned to be covered by the second partition wall MOH2 (more specifically, covered by the first portion MOH2_1).

[0216] In this way, the second connection electrode COE2 may be exposed under the second protrusion PP2 of the second partition wall MOH2.

[0217] The second connection electrode COE2 may contact the drain electrode of the third thin-film transistor T3 through a third drain contact hole CHd3 formed in the passivation layer 135, the bank 160, and the first partition wall MOH1.

[0218] In addition, similar to the first connection electrode COE1 or the second connection electrode COE2, a third connection electrode COE3 connected to the drain electrode of the fourth thin-film transistor T4 may be formed on the top surface of the second partition wall MOH2 (more specifically, on the top surface of the second portion MOH2_2).

[0219] In this regard, for example, the third connection electrode COE3 may be formed on the top surface of the second partition wall MOH2 and may have a shape extending along the second protrusion PP2 toward the inside of each sub-pixel SP. The outer portion of the third connection electrode COE3 may be positioned to be covered by the third partition wall MOH3 (more specifically, covered by the first portion MOH3_1).

[0220] In this way, the third connection electrode COE3 may be exposed under the third protrusion PP3 of the third partition wall MOH3.

[0221] The third connection electrode COE3 may contact the drain electrode of the fourth thin-film transistor T4 through a fourth drain contact hole CHd4 formed in the passivation layer 135, the bank 160, the first partition wall MOH1, and the second partition wall MOH2.

[0222] A plurality of stacked films may be deposited on the substrate 101 having the partition wall MOH and the connection electrodes COE1 to COE3 to form light-emitting diodes OD, such that light-emitting diodes OD in a series structure may be formed for each sub-pixel SP (or formed in units of sub-pixels SP).

[0223] In this regard, for example, the light-emitting diode OD may include: an R light-emitting stack STr, a G light-emitting stack STg, and a B light-emitting stack STb stacked upward; a cathode 169 stacked on the B light-emitting stack STb; a first charge generation layer CGL1 stacked between the R light-emitting stack STr and the G light-emitting stack STg; and a second charge generation layer CGL2 stacked between the G light-emitting stack STg and the B light-emitting stack STb. In addition, a first intermediate electrode IE1 may be formed between the first charge generation layer CGL1 and the G light-emitting stack STg, and a second intermediate electrode IE2 may be formed between the second charge generation layer CGL2 and the B light-emitting stack STb.

[0224] These stacked films constituting the light-emitting diode OD may be formed in a structure in which each sub-pixel SP is separated by a partition wall MOH.

[0225] In this regard, the R light-emitting stack STr may be separated by the partition wall MOH. Accordingly, the R light-emitting stack STr may be formed on the anode 150 and the bank 160 of each sub-pixel SP.

[0226] Here, the R light-emitting stack STr may be formed to expose at least a part of a first connection electrode COE1 located below the partition wall MOH (more specifically, below a first protrusion PP1 of the first partition wall MOH1). In this embodiment, the case where the R light-emitting stack STr is formed to cover an end portion of the first connection electrode COE1 is taken as an example.

[0227] Accordingly, when the R light-emitting stack STr is formed by deposition, the first connection electrode COE1 may be exposed between the R light-emitting stack STr and the first partition wall MOH1.

[0228] The first charge generation layer CGL1 formed on the R light-emitting stack STr may also be formed in substantially the same shape as the R light-emitting stack STr.

[0229] Similar to the R light-emitting stack STr and the first charge generation layer CGL1, the first intermediate electrode IE1 formed on the first charge generation layer CGL1 may be formed to be separated by the partition wall MOH for each sub-pixel SP (or in units of each sub-pixel SP).

[0230] Here, the first intermediate electrode IE1 is formed to have a larger size (or width or area) than the underlying R light-emitting stack STr and the first charge generation layer CGL1. Thus, the first intermediate electrode IE1 may have a shape that extends outward while substantially covering the R light-emitting stack STr and the first charge generation layer CGL1.

[0231] The first intermediate electrode IE1 may extend over the first connection electrode COE1 and contact the exposed first connection electrode COE1. Therefore, the first intermediate electrode IE1 may be electrically connected to the drain electrode of the second thin film transistor T2 via the first connection electrode COE1 and receive a light emitting current.

[0232] On the first intermediate electrode IE1 , similarly to the R light emitting stack STr, the G light emitting stack STg may be separated for each sub-pixel SP (or in units of each sub-pixel SP) via the partition wall MOH.

[0233] Here, the G light emitting stack STg may be formed to expose at least a portion of the second connection electrode COE2 located under the partition wall MOH (more specifically, under the second protrusion PP2 of the second partition wall MOH2). In this embodiment, the case where the G light emitting stack STg is formed to cover the end of the second connection electrode COE2 is taken as an example.

[0234] Therefore, when the G light emitting stack STg is formed by deposition, the second connection electrode COE2 may be exposed between the G light emitting stack STg and the second partition wall MOH2.

[0235] The second charge generation layer CGL2 formed on the G light emitting stack body STg may also be formed in substantially the same shape as the G light emitting stack body STg.

[0236] Similar to the G light emitting stack STg and the second charge generation layer CGL2, the second intermediate electrode IE2 formed on the second charge generation layer CGL2 may be formed to be separated by the partition wall MOH for each sub-pixel SP (or in units of each sub-pixel SP).

[0237] Here, the second intermediate electrode IE2 is formed to have a size (or width or area) larger than the G light emitting stack STg and the second charge generation layer CGL2 therebelow. Thus, the second intermediate electrode IE2 may have a shape extending outward while substantially covering the G light emitting stack STg and the second charge generation layer CGL2.

[0238] The second intermediate electrode IE2 may extend over the second connection electrode COE2 and contact the exposed second connection electrode COE2. Therefore, the second intermediate electrode IE2 may be electrically connected to the drain electrode of the third thin film transistor T3 via the second connection electrode COE2 and receive a light emitting current.

[0239] On the second intermediate electrode IE2 , similarly to the R light emitting stack STr and the G light emitting stack STg, the B light emitting stack STb may be separated for each sub-pixel SP (or in units of each sub-pixel SP) via the partition wall MOH.

[0240] Here, the B light-emitting stack STb can be formed to expose at least a part of the third connection electrode COE3 located below the partition wall MOH (more specifically, below the third protrusion PP3 of the third partition wall MOH3). In this embodiment, the case where the B light-emitting stack STb is formed to cover the end of the third connection electrode COE3 is taken as an example.

[0241] Therefore, when the B light-emitting stack STb is formed by deposition, the third connection electrode COE3 can be exposed between the B light-emitting stack STb and the third partition wall MOH3.

[0242] Similar to the B light-emitting stack STb, the cathode 169 formed on the B light-emitting stack STb can be formed to be separated by the partition wall MOH for each sub-pixel SP (or in units of each sub-pixel SP).

[0243] Here, the cathode 169 is formed to have a larger size (or width or area) than the underlying B light-emitting stack STb. Thus, the cathode 169 can have a shape that extends outward while substantially covering the B light-emitting stack STb.

[0244] The cathode 169 can extend over the third connection electrode COE3 and contact the exposed third connection electrode COE3. Therefore, the cathode 169 can be electrically connected to the drain electrode of the fourth thin-film transistor T4 via the third connection electrode COE3 and receive a low-potential driving voltage.

[0245] As described above, in order to form each of the first intermediate electrode IE1, the second intermediate electrode IE2, and the cathode 169 to have a larger area than the underlying stacked film, each of these electrodes IE1, IE2, and 169 can be deposited at a deposition angle smaller than that of the underlying stacked film.

[0246] In addition, the thicknesses of the R light-emitting stack STr, the G light-emitting stack STg, the B light-emitting stack STb, the first charge generation layer CGL1, and the second charge generation layer CGL2 can be set such that the second intermediate electrode IE2 and the cathode 169 can be stably connected to the corresponding second connection electrode COE2 and third connection electrode COE3.

[0247] In this regard, for example, the thicknesses of the second charge generation layer CGL2 located below the second intermediate electrode IE2, the G light-emitting stack STg, the R light-emitting stack Str, and the first charge generation layer CGL1 located below the second charge generation layer CGL2 may be set such that the height of the top surface of the second charge generation layer CGL2 (or the G light-emitting stack STg) corresponds to the height of the top surface of the first partition wall MOH1 (or is equal to or greater than the height of the top surface of the first partition wall MOH1). In this case, the second intermediate electrode IE2 stacked on the second charge generation layer CGL2 may extend over the second connection electrode COE2 formed on the top surface of the first partition wall MOH1 to achieve a stable contact structure.

[0248] Similarly, the thickness of the B light-emitting stack STb located below 169 and so on may be set such that the height of the top surface of the B light-emitting stack STb corresponds to the height of the top surface of the second partition wall MOH2 (or is equal to or greater than the height of the top surface of the second partition wall MOH2). In this case, the cathode 169 stacked on the B light-emitting stack STb may extend over the third connection electrode COE3 formed on the top surface of the second partition wall MOH2 to achieve a stable contact structure.

[0249] The encapsulation layer 170 may be formed substantially over the entire surface of the substrate 101 of the cathode 169 separated by the partition wall MOH having a three-stage overhang structure.

[0250] The encapsulation layer 170 can be used to improve reliability by blocking the penetration of moisture or oxygen from the outside.

[0251] Different from the first embodiment, a color filter layer may not be formed on the encapsulation layer 170. In this regard, as described above, each sub-pixel SP uses a light-emitting stack ST that can be individually driven, such that each sub-pixel SP is not limited to an area that emits a specific color, but can be used as an area that can emit various colors as needed. Therefore, it is not necessary to form a specific color filter pattern for each sub-pixel SP.

[0252] Therefore, the light-emitting display device 10 of this embodiment may not be provided with a color filter layer.

[0253] In addition, a cover layer (or transparent layer) 180 may be formed on the encapsulation layer 170. The substrate 101 having the cover layer 180 may have a substantially flat surface.

[0254] Figures 10 to 12 It is a diagram showing examples of various colors that can be achieved in a sub-pixel using a light-emitting diode having a series structure according to the third embodiment of the present invention.

[0255] Refer to Figure 10, which shows the case where when the light-emitting diode OD of the sub-pixel SP drives each of the R light-emitting stack STr, G light-emitting stack STg, and B light-emitting stack STb individually, red, green, and blue, which are primary colors, can be achieved.

[0256] In this regard, for example, when the R light-emitting stack STr is individually driven by forming a light-emitting current path between the anode 150 and the first intermediate electrode IE1, the corresponding red light can be emitted and output. Additionally, when the G light-emitting stack STg is individually driven by forming a light-emitting current path between the first intermediate electrode IE1 and the second intermediate electrode IE2, the corresponding green light can be emitted and output. Additionally, when the B light-emitting stack STb is individually driven by forming a light-emitting current path between the second intermediate electrode IE2 and the cathode 169, the corresponding blue light can be emitted and output.

[0257] Refer to Figure 11 , which shows the case where when the light-emitting diode OD of the sub-pixel SP drives two adjacent stacks among the R light-emitting stack STr, G light-emitting stack STg, and B light-emitting stack STb in combination, yellow and cyan, which are mixed colors resulting from the combination, can be achieved.

[0258] In this regard, for example, when the R light-emitting stack STr and the G light-emitting stack STg are driven together by forming a light-emitting current path between the anode 150 and the second intermediate electrode IE2, yellow light, which is a mixed color of red and green, can be emitted and output. Additionally, when the G light-emitting stack STg and the B light-emitting stack STb are driven together by forming a light-emitting current path between the first intermediate electrode IE1 and the cathode 169, cyan light, which is a mixed color of green and blue, can be emitted and output.

[0259] Refer to Figure 12 , which shows the case where when the light-emitting diode OD of the sub-pixel SP drives all of the R light-emitting stack STr, G light-emitting stack STg, and B light-emitting stack STb in combination, white light, which is a mixed color resulting from the combination, can be achieved.

[0260] In this regard, for example, when the R light-emitting stack STr, G light-emitting stack STg, and B light-emitting stack STb are driven together by forming a light-emitting current path between the anode 150 and the cathode 169, white light, which is a mixed color of red light, green light, and blue light, can be emitted and output.

[0261] As described above, according to an embodiment of the present invention, when using a light-emitting diode in a series structure, a first light-emitting stack and a second light-emitting stack that respectively emit yellow light and blue light and constitute the light-emitting diode, and an intermediate electrode disposed between the first light-emitting stack and the second light-emitting stack can be separated by a partition wall of a hanging structure disposed along both side boundaries of the B sub-pixel, and the intermediate electrode of the B sub-pixel can be configured to receive a separate driving current.

[0262] Therefore, in the B sub-pixel, blue light can be emitted and output by driving the second light-emitting stack alone without driving the first light-emitting stack, so that power consumption can be reduced and low-power driving is possible. In addition, since there is no need to form a blue color filter pattern in the B sub-pixel, the material cost of the color filter pattern can be reduced.

[0263] In addition, according to an embodiment of the present invention, when using a light-emitting diode in a series structure, a first light-emitting stack, a second light-emitting stack, and a third light-emitting stack that respectively emit red, green, and blue light and constitute the light-emitting diode, and a first intermediate electrode and a second intermediate electrode disposed between the first light-emitting stack, the second light-emitting stack, and the third light-emitting stack can be separated by a partition wall of a multi-level hanging structure disposed around the sub-pixel for each sub-pixel (or in units of each sub-pixel), and the first intermediate electrode, the second intermediate electrode, and the cathode can be configured to receive separate driving currents.

[0264] Therefore, the first light-emitting stack, the second light-emitting stack, and the third light-emitting stack in each sub-pixel can be driven individually and combinedly, so that power consumption can be reduced and low-power driving is possible.

[0265] In addition, since each sub-pixel is not limited to an area that emits a specific color and can be used as an area that can emit various colors as needed, the color image display performance of the light-emitting display device can be maximized. In addition, since there is no need to form a specific color filter pattern in each sub-pixel, there is no need to form a color filter layer, and the material cost of the color filter pattern can be reduced to the greatest extent.

[0266] It is obvious to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the present invention. Therefore, the present invention is intended to cover modifications and variations of the present invention that fall within the scope of the appended claims and their equivalents.

Claims

1. A light-emitting display device, comprising: A substrate including a display area in which first sub-pixels, second sub-pixels, and third sub-pixels of different colors are arranged; a first electrode formed in each of the first sub-pixel, the second sub-pixel, and the third sub-pixel; A partition wall of an overhang structure extending along a boundary between the first sub-pixel and the second and third sub-pixels and including a protrusion protruding outward; forming a connection electrode below the protruding portion of the partition wall at the boundary of the first sub-pixel; A first light emitting stack and a second light emitting stack disposed on the first electrode of the first sub-pixel and on the first electrode of the second sub-pixel and the third sub-pixel, a charge generation layer between the first light emitting stack and the second light emitting stack, and a second electrode on the second light emitting stack, wherein the first light emitting stack, the second light emitting stack, the charge generation layer and the second electrode in the first sub-pixel are separated from the first light emitting stack, the second light emitting stack, the charge generation layer and the second electrode in the second sub-pixel by the partition wall, respectively; as well as An intermediate electrode separated by the partition wall and disposed in the first sub-pixel, located between the charge generation layer in the first sub-pixel and the second light emitting stack, and connected to the connection electrode.

2. The light emitting display device according to claim 1, further comprising a color filter layer disposed on the second electrode, The color filter layer includes a first color filter pattern and a second color filter pattern corresponding to the second sub-pixel and the third sub-pixel and generating the colors of the second sub-pixel and the third sub-pixel, respectively, and a transparent pattern corresponding to the first sub-pixel.

3. The light emitting display device according to claim 1 , further comprising a bank formed along a boundary of each of the first sub-pixel, the second sub-pixel, and the third sub-pixel, wherein the partition wall and the connection electrode are located on the bank at the boundary of the first sub-pixel, and The first light emitting stack of the first sub-pixel covers an end of the connection electrode to expose a portion of the connection electrode, and the intermediate electrode extends to the outside of the first light emitting stack and contacts the exposed portion of the connection electrode.

4. The light-emitting display device according to claim 1 , wherein the first sub-pixel is provided with a thin film transistor connected to the connection electrode, and each of the second sub-pixel and the third sub-pixel is provided with a thin film transistor connected to the first electrode, wherein in the first sub-pixel, the first light emitting stack is in a light emitting off state and the second light emitting stack emits light, In each of the second sub-pixel and the third sub-pixel, the first light-emitting stack and the second light-emitting stack emit light together.

5. The light-emitting display device according to claim 1, wherein the second electrode of the first sub-pixel and each of the second electrodes of the second sub-pixel and the third sub-pixel extend along the partition wall and are connected to a voltage line arranged in a non-display area outside the display area to receive a low-potential driving voltage.

6. The light-emitting display device according to claim 1 further includes a virtual intermediate electrode separated from the intermediate electrode by the partition wall and arranged in the second sub-pixel and the third sub-pixel, and located between the charge generation layer in the second sub-pixel and the third sub-pixel and the second light-emitting stack. 7 . The light emitting display device according to claim 1 , wherein the second light emitting stack comprises a 2-1st light emitting stack and a 2-2nd light emitting stack on the 2-1st light emitting stack. 8 . The light emitting display device according to claim 1 , wherein the first sub-pixel, the second sub-pixel, and the third sub-pixel are a blue sub-pixel, a red sub-pixel, and a green sub-pixel, respectively. 9 . The light emitting display device according to claim 1 , wherein the partition wall is formed to extend in a column direction along both side boundaries of the first sub-pixel, and the partition wall is not formed along a boundary between the second sub-pixel and the third sub-pixel. 10 . The light emitting display device according to claim 1 , wherein the intermediate electrodes are continuously formed along the first sub-pixels arranged in the same column line.

11. A light-emitting display device, comprising: A substrate, the substrate comprising a display area on which a plurality of sub-pixels are arranged; A first electrode formed in units of each sub-pixel; a partition wall formed along a boundary of the sub-pixel and including a first partition wall, a second partition wall, and a third partition wall stacked upward, each of the first partition wall, the second partition wall, and the third partition wall having an overhang structure and including a first protrusion, a second protrusion, and a third protrusion protruding outward, respectively; a first connection electrode formed under the first protrusion, a second connection electrode formed on a top surface of the first protrusion, and a third connection electrode formed on a top surface of the second protrusion; as well as A first light emitting stack, a second light emitting stack and a third light emitting stack stacked on the first electrode and emitting different colors; a second electrode on the third light emitting stack; a first charge generation layer between the first light emitting stack and the second light emitting stack; a second charge generation layer between the second light emitting stack and the third light emitting stack; a first intermediate electrode between the first charge generation layer and the second light emitting stack; and a second intermediate electrode between the second charge generation layer and the third light emitting stack, wherein the first to third light emitting stacks, the first and second charge generation layers, the first and second intermediate electrodes, and the second electrode are separated by the partition wall in units of each sub-pixel, and The first intermediate electrode, the second intermediate electrode and the second electrode are connected to the first connecting electrode, the second connecting electrode and the third connecting electrode respectively.

12. The light emitting display device according to claim 11, further comprising a bank formed along a boundary of the sub-pixel, wherein the partition wall and the first connecting electrode are located on the bank, and The first light emitting stack covers an end of the first connecting electrode to expose a portion of the first connecting electrode, and the first intermediate electrode extends to the outside of the first light emitting stack and contacts the exposed portion of the first connecting electrode. 13 . The light emitting display device according to claim 11 , wherein the second light emitting stack covers an end portion of the second connecting electrode to expose a portion of the second connecting electrode, and the second intermediate electrode extends to the outside of the second light emitting stack and contacts the exposed portion of the second connecting electrode. 14 . The light emitting display device according to claim 11 , wherein the third light emitting stack covers an end portion of the third connection electrode to expose a portion of the third connection electrode, and the second electrode extends to the outside of the third light emitting stack and contacts the exposed portion of the third connection electrode.

15. The light emitting display device according to claim 11, wherein the height of the top surface of the second light emitting stack or the second charge generation layer is equal to or greater than the height of the top surface of the first partition wall, and The height of the top surface of the third light emitting stack is equal to or greater than the height of the top surface of the second partition wall; and each height is a height above the substrate. 16 . The light-emitting display device according to claim 11 , wherein the sub-pixel has a first thin film transistor, a second thin film transistor, a third thin film transistor, and a fourth thin film transistor respectively connected to the first electrode, the first connecting electrode, the second connecting electrode, and the third connecting electrode. 17 . The light emitting display device according to claim 11 , wherein the first light emitting stack, the second light emitting stack, and the third light emitting stack individually emit light, or two or more of the first light emitting stack, the second light emitting stack, and the third light emitting stack together emit light. 18 . The light emitting display device according to claim 11 , wherein the first light emitting stack, the second light emitting stack, and the third light emitting stack are different light emitting stacks among a red light emitting stack, a green light emitting stack, and a blue light emitting stack. 19 . The light emitting display device according to claim 11 , wherein the second protrusion extends and protrudes further outward than the first protrusion, and the third protrusion extends and protrudes further outward than the second protrusion.

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