Electronic device

Abstract

One embodiment of the present invention provides an electronic device that is easy to wear and remove. The electronic device is a goggle-type electronic device and includes a frame, and a housing in which a display panel and an optical device are assembled. The frame may be worn on the head and includes a metal plate on an opposite side of the wearing face. In addition, one surface of the housing is provided with an electromagnet. The metal plate can be attracted by energizing the electromagnet, so that the housing can be fixed to the frame. By adopting the structure, a user can easily assemble and disassemble a part used as an electronic device.

Description

Technical Field

[0001] One aspect of the present invention relates to an optical device.

[0002] Note that one aspect of the present invention is not limited to the above technical field. One aspect of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. In addition, one aspect of the present invention relates to a process, a machine, a manufacture, or a composition of matter. Thus, more specifically, as an example of the technical field of one aspect of the present invention disclosed in this specification, semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, imaging devices, methods of operating these devices, or manufacturing methods of these devices can be cited.

[0003] Note that in this specification and the like, a semiconductor device refers to all devices that can operate by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are one aspect of a semiconductor device. In addition, a storage device, a display device, an imaging device, and an electronic device sometimes include a semiconductor device. Background Art

[0004] As electronic devices applied to virtual reality (VR: Virtual Reality), augmented reality (AR: Augmented Reality), etc., goggle-type devices and glasses-type devices have been developed.

[0005] In addition, as a display device that can be applied to a display panel, typically, a display device including a liquid crystal element, a display device including an organic EL (Electro Luminescence) element, a light-emitting diode (LED), or the like can be cited.

[0006] Since a display device including an organic EL element does not require a backlight required for a liquid crystal display device, a thin, lightweight, high-contrast, and low-power display device can be realized. For example, Patent Document 1 discloses an example of a display device using an organic EL element.

[0007] [Prior Patent Document]

[0008] [Patent Document]

[0009] [Patent Document 1] Japanese Patent Application Laid-Open No. 2018-107444 Summary of the Invention

[0010] Technical Problem to be Solved by the Invention

[0011] An electronic device applied to VR, AR, etc. is one of wearable devices, and is preferably miniaturized and lightened in order to improve portability and wearability.

[0012] On the other hand, there is a limit to the weight reduction of a display panel, an optical device, a controller, a battery, a housing for housing them, etc., and the user somewhat feels that the head is heavy. Therefore, the user sometimes gets tired due to long-term use. In addition, there is a problem that the work of putting on or taking off the electronic device on or from the head is very complicated.

[0013] Therefore, it is preferable that such an electronic device makes it difficult for the user to feel its weight and is easy to put on and take off.

[0014] Therefore, one of the objects of one aspect of the present invention is to provide an electronic device that is easy to put on and take off. In addition, one of the objects of one aspect of the present invention is to provide an electronic device that is difficult for the user to feel the weight. In addition, one of the objects of one aspect of the present invention is to provide a novel electronic device.

[0015] Note that the description of these objects does not preclude the existence of other objects. Note that one aspect of the present invention does not need to achieve all of the above objects. Note that objects other than the above can be known and extracted from the description of the specification, drawings, claims, etc.

[0016] Means for Solving Technical Problems

[0017] One aspect of the present invention relates to an electronic device that is easy to put on and take off.

[0018] One aspect of the present invention is a goggle-type electronic device including a frame and a housing. The housing includes a display panel and an optical device inside, the first surface of the housing includes an electromagnet, and the side of the frame opposite to the surface worn on the head includes a metal plate. The first surface of the housing is fixed relative to the metal plate by attracting the metal plate with the electromagnet.

[0019] The surface side of the metal plate may have convex portions, and the first surface of the housing may have concave portions, and alignment can be performed by fitting the convex portions and the concave portions.

[0020] The surface side of the metal plate may have a convex curved surface, and the first surface of the housing may have a concave curved surface.

[0021] The surface of the metal plate and the first surface of the housing may have planes.

[0022] The housing may be connected to an auxiliary device. The auxiliary device is preferably composed of one or more selected from a multi-joint type arm, a sliding mechanism, and a balancer.

[0023] The display panel preferably includes an organic EL element. The optical device preferably includes a semi-reflective mirror, a lens, a retardation plate, and a reflective polarizer.

[0024] Advantages of the Invention

[0025] According to one aspect of the present invention, an electronic device that can be easily worn on and removed from the head can be provided. In addition, an electronic device that does not easily cause a user to feel heavy can be provided. In addition, a novel electronic device can be provided.

[0026] Note that the description of these effects does not preclude the existence of other effects. One aspect of the present invention does not necessarily have all of the above effects. Effects other than the above can be extracted from the description in the specification, the drawings, and the claims. Description of the Drawings

[0027] Figure 1A and Figure 1B are diagrams illustrating the electronic device.

[0028] Figure 2A and Figure 2B are diagrams illustrating the electronic device.

[0029] Figure 3A and Figure 3B are diagrams illustrating the electronic device.

[0030] Figure 4A is a diagram illustrating an auxiliary device connected to the electronic device. Figure 4B1 to Figure 4B5 is a diagram illustrating the operation of the auxiliary device.

[0031] Figure 5A and Figure 5B are diagrams illustrating an auxiliary device connected to the electronic device.

[0032] Figure 6A and Figure 6B are diagrams illustrating the optical unit.

[0033] Figure 7A to Figure 7C is a diagram illustrating the display panel.

[0034] Figure 8A to Figure 8C is a diagram illustrating an example of the structure of the display panel.

[0035] Figure 9A and Figure 9B are diagrams illustrating an example of the structure of the display panel.

[0036] Figure 10A to Figure 10F is a diagram illustrating an example of the structure of the pixel.

[0037] Figure 11A and Figure 11B are diagrams illustrating an example of the structure of the display panel.

[0038] Figure 12 It is a diagram showing an example of the structure of a display panel.

[0039] Figure 13 It is a diagram showing an example of the structure of a display panel.

[0040] Figure 14 It is a diagram showing an example of the structure of a display panel.

[0041] Figure 15 It is a diagram showing an example of the structure of a display panel.

[0042] Figure 16 It is a diagram showing an example of the structure of a display panel.

[0043] Figure 17 It is a diagram showing an example of the structure of a display panel.

[0044] Figure 18A and Figure 18B It is a diagram showing a vertical transistor.

[0045] Figure 19A and Figure 19B It is a diagram showing a vertical transistor. Detailed implementation mode

[0046] The implementation mode will be described in detail with reference to the accompanying drawings. Note that the present invention is not limited to the following description, and those of ordinary skill in the art can easily understand the fact that its mode and details can be transformed into various forms without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited only to the content described in the following implementation modes. Note that in the structure of the invention described below, the same reference numerals are used in different drawings to represent the same parts or parts having the same functions, and the repeated description thereof is omitted. Note that sometimes the shading of the same constituent elements is appropriately omitted or changed in different drawings.

[0047] In addition, even if an element is shown as one element in a circuit diagram, if there is no problem in function, the element can also be composed of multiple elements. For example, multiple transistors used as switches can be connected in series or in parallel. In addition, sometimes a capacitor is divided and arranged at multiple positions.

[0048] In addition, sometimes a single conductor has multiple functions such as wiring, electrodes, and terminals. In this specification, sometimes multiple names are used for the same element. In addition, even if a direct connection between elements is shown in a circuit diagram, sometimes in fact the elements are connected through one or more conductors, and such a structure is also included in the category of direct connection in this specification.

[0049] (Embodiment 1)

[0050] An electronic device according to one embodiment of the present invention will be described in this embodiment.

[0051] One embodiment of the present invention is a goggle-type electronic device. The electronic device includes a frame and a housing in which a display panel and an optical device are assembled.

[0052] The frame can be worn on the head (face) and includes a metal plate on the side opposite to the wearing surface. In addition, an electromagnet is provided on one surface of the housing. By energizing the electromagnet, the metal plate can be attracted, and thus the housing can be fixed to the frame.

[0053] With this structure, the user can attach the housing to the frame when needed while wearing the frame on the head. In addition, when not needed, the housing can be detached from the frame only. In other words, the attachment and detachment of the part used as the electronic device can be easily performed.

[0054] In addition, the housing can be connected to an auxiliary device. The auxiliary device is a device that assists a person in lifting heavy objects or the like to reduce the physical burden. The user can wear the frame on the head and attach the housing connected to the auxiliary device to the frame when needed. With this structure, the weight of the housing felt by the user can be reduced, and thus the fatigue of the user can be reduced.

[0055] Figure 1A and Figure 1B is a perspective view showing a goggle-type electronic device according to one embodiment of the present invention. The electronic device includes a frame 10 worn on the head and a housing 20 in which components for displaying images and the like are assembled, and they can be separated.

[0056] As Figure 2A shown, the frame 10 can be worn on a person's head by a holding tool 13. Note that Figure 2A the belt-shaped holding tool 13 shown is only an example, and an ear-hook type, a hat type, or the like holding tool can also be used to wear the frame 10 on the head.

[0057] In order to be easily worn on a person's head, the wearing surface side of the frame 10 has a concave curved surface, and an opening is provided in the area in front of the eyes when worn. It can be said that the frame 10 has a hollow shape. The material on the wearing surface side of the frame 10 is preferably a lightweight resin or the like, and the portion in contact with the face can also be formed of an elastic material.

[0058] A metal plate 11 made of ferromagnetic (iron, nickel, cobalt, or an alloy containing one or more of them, etc.) is provided on the side opposite to the wearing surface of the frame 10. Note that although Figure 1A an example in which a frame-shaped metal plate 11 is provided is shown, a plurality of small pieces of metal plate 11 can also be provided.

[0059] The opposite side of the wearing surface of the frame 10 and the surface side of the metal plate 11 preferably have convex curved surfaces. By adopting such a shape, a thin frame 10 can be realized, thereby ensuring a wide field of view.

[0060] A display panel (not shown), an optical device 21, etc. are assembled inside the housing 20. In addition, the first surface 24 of the housing 20 has a concave curved surface that fits the shape of the surface side of the metal plate 11, and an electromagnet 23 is provided on the first surface 24. The number of electromagnets 23 can be adjusted as needed. In addition, the surface shape of the electromagnet 23 is not limited to a circle or an ellipse, and can also be a polygon.

[0061] When the electromagnet 23 is energized in a state where the first surface 24 of the housing 20 is close to the metal plate 11, the electromagnet 23 can attract the metal plate 11. Thus, as Figure 2B shown, the first surface 24 of the housing can be fixed opposite to the metal plate 11. That is, the housing 20 can be fixed to the frame 10.

[0062] Note that although it is preferable to provide the electromagnet 23 in the housing 20 because the housing 20 is an easy way to assemble the battery, when the battery is assembled in the frame 10, the electromagnet 23 can also be provided in the frame 10 and the metal plate 11 can be provided in the housing 20.

[0063] In addition, when the housing 20 is lightweight and does not require strong magnetic force, a permanent magnet can be used instead of the electromagnet. In addition, both the electromagnet and the permanent magnet can be used. In addition, a connector such as a male connector on one side of the frame 10 and the housing 20 and a female connector on the other side can be adopted.

[0064] On the surface side of the metal plate 11, convex portions 12 such as pointer type, hemispherical or conical are preferably provided. In addition, on the first surface 24 of the housing 20, concave portions 22 that can fit by inserting or overlapping the convex portions 12 are preferably provided. As Figure 2A shown by the dotted arrow, by fitting the convex portion 12 with the concave portion 22, alignment can be easily performed even in a state where the frame 10 cannot be directly seen.

[0065] In addition, the convex portion 12 can be either a part of the metal plate 11 or fixed to the metal plate 11. Alternatively, the convex portion 12 can be provided on the opposite side of the wearing surface of the frame 10, and an opening portion that penetrates the convex portion 12 can be provided in the metal plate 11.

[0066] In addition, as Figure 3A and Figure 3B shown, the shape on the opposite side of the wearing surface of the frame 10, the surface of the metal plate 11, and the first surface 24 of the housing 20 can be a plane. In this structure, although compared withFigure 1A , Figure 1B The structure shown has an increased thickness compared to the frame 10, but the housing 20 can be reduced. In addition, since the surface of the metal plate 11 in contact with the housing 20 is a flat surface, it is easy to align the convex portion 12 and the concave portion 22, and thus it is easy to install.

[0067] As Figure 1A , Figure 1B or Figure 3A , Figure 3B shown, by adopting a structure in which the frame 10 and the housing 20 can be separated, the wearing and removing operations of the relatively heavy housing 20 and the lightweight frame 10 can be performed separately. Therefore, by always wearing the lightweight frame 10 and installing the housing 20 when needed, the complexity felt during wearing or removing can be solved. In addition, since only the relatively heavy housing 20 can be simply disassembled, the fatigue of the user can be reduced.

[0068] In addition, the housing 20 can also be connected to an auxiliary device. Figure 4A FIG. is a diagram illustrating an example of the connection between the housing 20 and the auxiliary device. Figure 4A An auxiliary device having a structure in which a multi-joint arm 30, a sliding mechanism including a bushing 33 (a cylindrical sliding portion having a bearing provided on its inner surface) and a main shaft 34, and a balancer 36 are combined is illustrated.

[0069] Note that a balancer is a device that uses the tension of a spring or the like to maintain balance so that the weight of a lifted object approaches zero and the object can be moved up and down with a small force.

[0070] The multi-joint arm 30 includes a plurality of shafts 32 that can be bent or rotated, and can follow and support the housing 20 that moves in various directions. Note that Figure 4A the multi-joint arm 30 shown is an example, and it can also be a multi-joint arm including more shafts. Alternatively, it can also be a multi-joint arm having a shaft whose moving direction is limited to one direction (up and down or left and right) or two directions (up and down and left and right). In addition, the multi-joint arm can also include a spring, a telescopic arm, etc.

[0071] The sliding mechanism includes a bushing 33 that fits around a smooth metal main shaft 34, and can move the bushing 33 linearly. By connecting the sliding mechanism to the multi-joint arm 30, the resistance when the housing 20 moves up and down can be reduced compared to the case of using only the multi-joint arm 30. In addition, a structure without a sliding mechanism can also be adopted.

[0072] Although the resistance can be reduced by the sliding mechanism, since the weight of the multi-joint arm 30 is applied to the housing, it is preferable to reduce the weight felt by the user by the balancer 36. For example, a spring-type balancer 36 is provided above the main shaft 34, and the bushing 33 and the balancer 36 are connected by a wire rope 35. By adopting this structure, the weight when moving the bushing 33 connected with the multi-joint arm in the vertical direction can be reduced, and the bushing 33 can be stopped at any position.

[0073] Note that, even without providing the sliding mechanism, the wire rope 35 can also be connected near the connection part of the multi-joint arm 30 and the housing 20 or to the housing 20.

[0074] In addition, the housing 20 can be connected to the control unit 37 through a cable 38. The control unit 37 can supply image data, power supply, etc. to the housing 20 through the cable 38. Since the cable 38 can be connected to the housing 20 through an auxiliary device, the user is hardly affected by the resistance of the cable 38 and can move easily. In addition, since image data and power supply can be supplied from the cable 38, there is no need to use wireless devices and batteries, thereby reducing the overall weight of the housing part.

[0075] Thus, by using an auxiliary device, as Figure 4B1 to Figure 4B5 shown, even when the housing 20 is moved in various directions, the overall weight of the housing part can be reduced by following with the auxiliary device, thereby reducing the fatigue of the user.

[0076] Note that Figure 4A the connection structure of the auxiliary device shown and the housing 20 is only an example. For example, as Figure 5A shown, the multi-joint arm 30 fixed to the ceiling 50 can also be connected to the housing 20. Or, as Figure 5B shown, the balancer 36 fixed to the ceiling 50 can also be connected to the housing 20 through the wire rope 35. In addition, the multi-joint arm can also be fixed to the wall or the floor.

[0077] Figure 6A is a diagram illustrating the display unit 60 assembled in the housing 20. Figure 6B is a diagram illustrating the components of the display unit 60.

[0078] The user can see the image displayed on the display panel 61 by bringing the eyes close to the vicinity of the optical device 21. The user sees the image in a state where the viewing angle is increased by the optical device 21, thereby obtaining a sense of immersion and reality.

[0079] The display surface of the display panel 61 can be attached to the linear polarizer 62 and the retardation plate 63.

[0080] The optical device 21 may include, for example, a semi-reflective mirror 71, a lens 72, a retardation plate 73, a reflective polarizer 74, and a lens 75. Since the optical device 21 has a thin shape, it is sometimes referred to as a pancake lens.

[0081] By adopting such a structure and converting the light emitted from the display panel 61 into linearly polarized light or circularly polarized light, the components arranged on the optical path can be selectively reflected and transmitted. As a result, the optical path length can be ensured within a limited space, and the focal length of the optical device can be shortened.

[0082] Two display units 60 are mounted in the housing 20 such that the surfaces of the lenses 75 are exposed inward. One display unit 60 is a right-eye display unit, and the other display unit 60 is a left-eye display unit. By respectively displaying images corresponding to parallax with each display unit 60, the user can feel the stereoscopic effect of the images.

[0083] In addition, the housing 20, the frame 10, or the holding tool 13 may also be provided with input terminals and output terminals. The input terminals can be connected to a cable that supplies an image signal from an image output device or the like, or power for charging a battery. The output terminals are used as, for example, sound output terminals and can be connected to headphones or headsets. In addition, in the case where sound data can be output through wireless communication or in the case where sound is output from an external image output device, the sound output terminals may not be provided.

[0084] In addition, a wireless communication module and a storage module may also be provided inside the housing 20, the frame 10, or the holding tool 13. The content to be viewed can be downloaded through wireless communication by the wireless communication module and stored in the storage module. As a result, the user can view the downloaded content offline at any time.

[0085] In addition, a gaze detection sensor may also be provided inside the housing 20. For example, operation buttons such as power on, power off, sleep, volume adjustment, channel change, menu display, selection, confirmation, return, and operation buttons such as play, stop, pause, fast forward, and rewind of a video are displayed for the user to see, and thus each operation can be performed. In addition, an operation button for energizing the electromagnet 23 may also be displayed, and the housing 20 can be loaded and unloaded by an operation using gaze detection.

[0086] In addition, a light sensor for detecting blinking may also be provided inside the housing 20, and the above-exemplified operations can be performed by a blinking action. For example, the number of blinks within a certain period of time, the difference in the eye-closed time, etc. can be assigned to the above operations. In addition, a microphone may also be provided inside the housing 20, and the above-exemplified operations can be performed by voice recognition.

[0087] Through the above-mentioned line-of-sight detection, blink detection, or voice recognition, operations of the electronic device and attachment / detachment of the housing 20 can be hygienically performed without contacting the housing 20 with a finger or the like. That is to say, the electronic device according to one aspect of the present invention is also applicable to construction sites or medical sites where it is sometimes difficult to operate with a finger. In addition, in order to grasp the surrounding situation, a structure in which the housing 20 is connected to a camera and the display unit 60 can display the image captured by the camera in real time can also be adopted.

[0088] Figure 7A It is a diagram Figure 6B illustrating the display panel 61 shown. The display panel 61 includes a pixel array 84, a circuit 85, and a circuit 86. The pixel array 84 includes pixels 80 arranged in the column direction and the row direction.

[0089] The pixel 80 may include a plurality of sub-pixels 81. The sub-pixel 81 has a function of emitting light for display.

[0090] Note that in this specification, although for convenience, the smallest unit that works independently in one "pixel" is defined as a "sub-pixel" for description, "pixel" can also be replaced with "area", and "sub-pixel" can be replaced with "pixel".

[0091] The sub-pixel 81 includes a light-emitting device that emits visible light. As the light-emitting device, an EL element such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode) is preferably used. As the light-emitting substance included in the EL element, substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), substances that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials), inorganic compounds (quantum dot materials, etc.) can be cited. In addition, as the light-emitting device, an LED such as a Micro LED (Light Emitting Diode) can also be used.

[0092] The circuits 85 and 86 are driving circuits for driving the sub-pixels 81. The circuit 85 may have the function of a source driving circuit, and the circuit 86 may have the function of a gate driving circuit. As the circuits 85 and 86, for example, a shift register circuit or the like can be used.

[0093] In addition, as Figure 7B shown, a structure can also be adopted in which the circuits 85 and 86 are provided in a layer 87, the pixel array 84 is provided in a layer 88, and the layer 87 and the layer 88 overlap. By adopting this structure, a display device with a narrow border can be formed.

[0094] In addition, by disposing the driving circuit under the pixel array 84, the wiring length can be shortened and the wiring capacitance can be reduced. As a result, a display panel capable of high-speed operation and low-power consumption operation can be realized.

[0095] In addition, as Figure 7B shown, by partitioning and arranging the circuit 85 and the circuit 86, the pixel array 84 can be partially driven. For example, image data can be partially rewritten in the pixel array 84. In addition, a part of the pixel array 84 can be operated at different operating frequencies.

[0096] Note that Figure 7B the configurations and areas of the circuit 85 and the circuit 86 shown are only examples and can be appropriately changed. In addition, a part of the circuit 85 and the circuit 86 can also be formed in the same layer as the pixel array 84. In addition, the layer 87 can also be provided with circuits such as a storage circuit, an arithmetic circuit, and a communication circuit.

[0097] In this structure, for example, the layer 87 can be disposed on a single-crystalline silicon substrate, the circuit 85 and the circuit 86 can be formed using transistors including silicon in the channel formation region (hereinafter, Si transistors), and the pixel circuits included in the pixel array 84 disposed in the layer 88 can be formed using transistors including metal oxide in the channel formation region (hereinafter, OS transistors). The OS transistors can be formed using a thin film and laminated on the Si transistors.

[0098] Note that as Figure 7C shown, a layer 89 provided with OS transistors can also be included between the layer 87 and the layer 88. In the layer 89, a part of the pixel circuits included in the pixel array 84 can be formed using OS transistors. Alternatively, a part of the circuit 85 and the circuit 86 can be formed using OS transistors. Alternatively, a part of the circuits such as a storage circuit, an arithmetic circuit, and a communication circuit that can be disposed in the layer 87 can be formed using OS transistors.

[0099] At least a part of this embodiment can be implemented in appropriate combination with other embodiments and examples described in this specification.

[0100] (Embodiment 2)

[0101] In this embodiment, a structural example of a display panel of an electronic device that can be used in one mode of the present invention will be described. The display panel shown below can be used as the display panel 61 of Embodiment 1.

[0102] One embodiment of the present invention is a display panel including a light-emitting element (also referred to as a light-emitting device). The display panel includes two or more pixels having different emission colors. Each pixel includes a light-emitting element. Each light-emitting element includes a pair of electrodes and an EL layer between the pair of electrodes. The light-emitting element is preferably an organic EL element (organic electroluminescent element). Two or more light-emitting elements having different emission colors each include an EL layer containing different light-emitting materials. For example, a full-color display panel can be realized by including three light-emitting elements that emit light of red (R), green (G), or blue (B), respectively.

[0103] When manufacturing a display panel including a plurality of light-emitting elements having different emission colors, it is necessary to form at least a layer containing a light-emitting material (light-emitting layer) in an island shape. Here, a method of forming an island-shaped organic film by an evaporation method using a shadow mask such as a metal mask is known when forming a part or all of the EL layer. However, due to various effects such as the accuracy of the metal mask, the misalignment between the metal mask and the substrate, the flexure of the metal mask, and the scattering of the vapor, the shape and position of the deposited film become larger, and the shape and position of the island-shaped organic film deviate from the shape and position at the design time, making it difficult to achieve high definition and high aperture ratio of the display panel. In addition, during evaporation, sometimes the profile of the layer becomes blurred and the film thickness at the end becomes smaller. That is, sometimes the film thickness of the island-shaped light-emitting layer varies depending on the position. In addition, when manufacturing a large-sized, high-resolution, or high-definition display panel, there is a concern that the manufacturing yield decreases due to the low dimensional accuracy of the metal mask and the deformation caused by heat or the like. Therefore, measures have been taken to artificially improve the definition (also referred to as pixel density) by adopting a special pixel arrangement such as a Pentile arrangement.

[0104] Note that in this specification and the like, "island shape" means a state in which two or more layers formed of the same material in the same process are physically separated. For example, an island-shaped light-emitting layer means a state in which the light-emitting layer is physically separated from an adjacent light-emitting layer.

[0105] In one embodiment of the present invention, the EL layer is processed into a fine pattern by photolithography without using a shadow mask such as a high-precision metal mask (FMM). Therefore, a display panel with high definition and high aperture ratio, which has been difficult to achieve at present, can be realized. In addition, since the EL layer can be manufactured separately, a display panel with very vivid and high-contrast display quality can be realized. In addition, for example, the EL layer can also be processed into a fine pattern by using both a metal mask and photolithography.

[0106] In addition, part or all of the EL layer can be physically separated. Thereby, leakage current between light-emitting elements via a layer (also referred to as a common layer) commonly used by adjacent light-emitting elements can be suppressed. Therefore, light emission caused by unintentional crosstalk can be suppressed, and a display panel with a very high contrast can be realized. In particular, a display panel with high current efficiency at low brightness can be realized.

[0107] One embodiment of the present invention can also realize a display panel combining a light-emitting element that emits white light and color filters. In this case, light-emitting elements having the same structure can be used for each light-emitting element in pixels (sub-pixels) that emit different colors of light, and all layers in each light-emitting element can be used as a common layer. Furthermore, part or all of each EL layer can be separated by a process using photolithography. Thereby, leakage current via the common layer can be suppressed, and a display panel with high contrast can be realized. In particular, in an element having a series structure in which a plurality of light-emitting layers are stacked with an intermediate layer having high conductivity therebetween, leakage current via the intermediate layer can be effectively prevented, so a display panel having high brightness, high definition, and high contrast can be realized.

[0108] When processing the EL layer using photolithography, deterioration sometimes occurs due to part of the light-emitting layer being exposed. Therefore, it is preferable to provide an insulating layer that at least covers the side surfaces of the island-shaped light-emitting layer. This insulating layer can also cover a part of the top surface of the island-shaped EL layer. This insulating layer preferably uses a material having a barrier property against water and oxygen. For example, an inorganic insulating film that does not easily allow water or oxygen to diffuse can be used. Thereby, deterioration of the EL layer can be suppressed, and a display panel with high reliability can be realized.

[0109] In addition, there is an area (recess) between two adjacent light-emitting elements where the EL layer of each light-emitting element is not provided. When a common electrode or a common electrode and a common layer are formed so as to cover this recess, a phenomenon (also referred to as disconnection) sometimes occurs in which the common electrode is broken due to a step at the end of the EL layer, resulting in insulation of the common electrode on the EL layer. Thus, it is preferable to adopt a structure (also referred to as LFP: Local Filling Planarization) in which a resin layer used as a planarization film fills local steps located between two adjacent light-emitting elements. This resin layer is used as a planarization film. Thereby, disconnection of the common layer or the common electrode can be suppressed, and a display panel with high reliability can be realized.

[0110] Hereinafter, a more specific structural example of a display panel according to one embodiment of the present invention will be described with reference to the drawings.

[0111] [Structural Example 1]

[0112] Figure 8AFIG. 1 is a schematic top view of a display panel 100 according to one embodiment of the present invention. The display panel 100 includes a plurality of red light emitting elements 110R, a plurality of green light emitting elements 110G, and a plurality of blue light emitting elements 110B on a substrate 101. Figure 8A In order to distinguish the light-emitting elements, the symbols "R", "G" and "B" are attached to the light-emitting area of ​​each light-emitting element.

[0113] The light emitting elements 110R, the light emitting elements 110G, and the light emitting elements 110B are arranged in a matrix. Figure 8A The so-called stripe arrangement is shown in which light-emitting elements of the same color are arranged in one direction. Note that the arrangement method of the light-emitting elements is not limited to this, and an S-stripe arrangement, a Delta arrangement, a Bayer arrangement, a zigzag arrangement, a Pentile arrangement, a Diamond arrangement, etc. can also be used.

[0114] As the light emitting element 110R, the light emitting element 110G, and the light emitting element 110B, for example, OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode) is preferably used. As the light emitting substance contained in the EL element, an inorganic compound (quantum dot material, etc.) can be used in addition to an organic compound.

[0115] in addition, Figure 8A The connection electrode 111C is shown to be electrically connected to the common electrode 113. The connection electrode 111C is supplied with a potential (for example, an anode potential or a cathode potential) for supplying the common electrode 113. The connection electrode 111C is provided outside the display region where the light emitting elements 110R and the like are arranged.

[0116] The connecting electrode 111C can be arranged along the periphery of the display area. For example, it can be arranged along one side of the periphery of the display area, or it can be arranged across two or more sides of the periphery of the display area. That is, when the top surface shape of the display area is a rectangle, the top surface shape of the connecting electrode 111C can be a strip (rectangle), L-shaped, "冂"-shaped (square bracket-shaped) or quadrilateral, etc. Note that in this specification, etc., the top surface shape refers to the shape when viewed from above, that is, the shape viewed from above.

[0117] Figure 8B and Figure 8C They correspond to Figure 8A Schematic cross-sectional view of the dot-dashed line A1-A2 and the dot-dashed line A3-A4. Figure 8BA cross-sectional schematic view showing a light-emitting element 110R, a light-emitting element 110G, and a light-emitting element 110B disposed on a substrate 101. Figure 8C A cross-sectional schematic view showing a connection portion 140 where a connection electrode 111C is connected to a common electrode 113. In addition, the substrate 101 is provided with components of a pixel circuit connected to pixel electrodes included in the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, respectively.

[0118] The light-emitting element 110R includes a pixel electrode 111R, an organic layer 112R, a common layer 114, and a common electrode 113. The light-emitting element 110G includes a pixel electrode 111G, an organic layer 112G, a common layer 114, and a common electrode 113. The light-emitting element 110B includes a pixel electrode 111B, an organic layer 112B, a common layer 114, and a common electrode 113. The light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B commonly use the common layer 114 and the common electrode 113.

[0119] The organic layer 112R included in the light-emitting element 110R contains at least a light-emitting organic compound that emits red light. The organic layer 112G included in the light-emitting element 110G contains at least a light-emitting organic compound that emits green light. The organic layer 112B included in the light-emitting element 110B contains at least a light-emitting organic compound that emits blue light. The organic layer 112R, the organic layer 112G, and the organic layer 112B may each also be referred to as an EL layer and at least include a layer having a light-emitting substance (light-emitting layer).

[0120] Hereinafter, when describing the common content among the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, it will sometimes be referred to as the light-emitting element 110 for description. Similarly, when describing the common content among components distinguished by letters such as the organic layer 112R, the organic layer 112G, and the organic layer 112B, it will sometimes be described using symbols with the letters omitted.

[0121] The organic layer 112 and the common layer 114 may each independently include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. For example, the organic layer 112 has a stacked structure of a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer stacked from the pixel electrode 111 side, and the common layer 114 includes an electron injection layer.

[0122] The pixel electrodes 111R, 111G, and 111B are provided in each light-emitting element. In addition, the common electrode 113 and the common layer 114 are provided as a single layer commonly used by the respective light-emitting elements. As either one of the pixel electrodes and the common electrode 113, a conductive film having light transmittance to visible light is used, and a reflective conductive film is used for the other. By making each pixel electrode have light transmittance and making the common electrode 113 have reflectivity, a bottom-emission type (bottom emission structure) display panel can be realized. On the contrary, by making each pixel electrode have reflectivity and making the common electrode 113 have light transmittance, a top-emission type (top emission structure) display panel can be realized. In addition, by making both the pixel electrode and the common electrode 113 have light transmittance, a double-sided emission type (double-sided emission structure) display panel can also be realized.

[0123] A protective layer 121 is provided on the common electrode 113 so as to cover the light-emitting elements 110R, 110G, and 110B. The protective layer 121 has a function of preventing impurities such as water from diffusing from above to each light-emitting element.

[0124] The end portion of the pixel electrode 111 preferably has a tapered shape. When the end portion of the pixel electrode 111 has a tapered shape, the organic layer 112 provided along the end portion of the pixel electrode 111 may also have an inclined portion. By making the end portion of the pixel electrode 111 have a tapered shape, the coverage of the organic layer 112 provided across the end portion of the pixel electrode 111 can be improved. In addition, by making the side surface of the pixel electrode 111 have a tapered shape, foreign substances (for example, dust or fine particles, etc.) in the manufacturing process can be easily removed by a washing process or the like, so it is preferable.

[0125] Note that in this specification and the like, the tapered shape means a shape in which at least a part of the side surface of the constituent element is inclined with respect to the substrate surface. For example, a region in which the angle (also referred to as a cone angle) formed by the inclined side surface and the substrate surface is preferably less than 90° is preferred.

[0126] The organic layer 112 is processed into an island shape by photolithography. Therefore, the organic layer 112 has a shape in which the angle formed by the top surface and the side surface at its end portion is nearly 90°. On the other hand, the film thickness of the organic film formed using an FMM (Fine Metal Mask: high-precision metal mask) or the like tends to decrease toward the end portion. For example, its top surface is formed in a sloped shape in the range of 1 μm or more and 10 μm or less, so it is difficult to distinguish the top surface from the side surface.

[0127] An insulating layer 125, a resin layer 126, and a layer 128 are provided between two adjacent light-emitting elements.

[0128] Between two adjacent light-emitting elements, the sides of each organic layer 112 face each other across a resin layer 126. The resin layer 126 is located between two adjacent light-emitting elements and is provided in such a manner as to fill the end portions of each organic layer 112 and the region between the two organic layers 112. The top surface of the resin layer 126 has a smooth convex shape, and the common layer 114 and the common electrode 113 are provided so as to cover the top surface of the resin layer 126.

[0129] The resin layer 126 is used as a planarization film for filling the steps located between two adjacent light-emitting elements. By providing the resin layer 126, it is possible to prevent the common electrode 113 from being insulated from the organic layer 112 due to the step at the end portion of the organic layer 112 being interrupted (also referred to as disconnection).

[0130] As the resin layer 126, an insulating layer containing an organic material can be suitably used. For example, as the resin layer 126, an acrylic resin, a polyimide resin, an epoxy resin, an imide resin, a polyamide resin, a polyimide amide resin, a silicone resin, a siloxane resin, a benzocyclobutene resin, a phenolic resin, and precursors of the above resins can be used. In addition, as the resin layer 126, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can also be used.

[0131] In addition, as the resin layer 126, a photosensitive resin can also be used. As the photosensitive resin, a photoresist can also be used. The photosensitive resin can be a positive-type material or a negative-type material.

[0132] The resin layer 126 can also contain a material that absorbs visible light. For example, the resin layer 126 itself can be composed of a material that absorbs visible light, or the resin layer 126 can contain a pigment that absorbs visible light. As the resin layer 126, for example, the following resins can be used: a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light; or a resin that contains carbon black as a pigment and is used as a black matrix; etc.

[0133] The insulating layer 125 is in contact with the side surface of the organic layer 112. In addition, the insulating layer 125 covers the upper end portion of the organic layer 112. In addition, a part of the insulating layer 125 is in contact with the top surface of the substrate 101.

[0134] The insulating layer 125 is located between the resin layer 126 and the organic layer 112 and is used as a protective film for preventing the resin layer 126 from contacting the organic layer 112. When the organic layer 112 comes into contact with the resin layer 126, the organic layer 112 may be dissolved due to an organic solvent or the like used in forming the resin layer 126. Therefore, by providing the insulating layer 125 between the organic layer 112 and the resin layer 126, the side surface of the organic layer 112 can be protected.

[0135] The insulating layer 125 can be an insulating layer containing an inorganic material. As the insulating layer 125, inorganic insulating films such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitroxide insulating film can be used. The insulating layer 125 can have a single-layer structure or a laminated structure. As the oxide insulating film, a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, a yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, a tantalum oxide film, etc. can be cited. As the nitride insulating film, a silicon nitride film, an aluminum nitride film, etc. can be cited. As the oxynitride insulating film, a silicon oxynitride film, an aluminum oxynitride film, etc. can be cited. As the nitroxide insulating film, a silicon nitroxide film, an aluminum nitroxide film, etc. can be cited. In particular, by using a metal oxide film such as an aluminum oxide film or a hafnium oxide film formed by the ALD method, an inorganic insulating film such as a silicon oxide film, for the insulating layer 125, an insulating layer 125 with fewer pinholes and excellent EL layer protection function can be formed.

[0136] In this specification, etc., "oxynitride" refers to a material in which the oxygen content is more than the nitrogen content in its composition, and "nitroxide" refers to a material in which the nitrogen content is more than the oxygen content in its composition. For example, when it is described as "silicon oxynitride", it refers to a material in which the oxygen content is more than the nitrogen content in its composition, and when it is described as "silicon nitroxide", it refers to a material in which the nitrogen content is more than the oxygen content in its composition.

[0137] The insulating layer 125 can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, etc. The insulating layer 125 is preferably formed by the ALD method with good coverage.

[0138] In addition, by providing a reflective film (for example, a metal film containing one or more selected from silver, palladium, copper, titanium, aluminum, etc.) between the insulating layer 125 and the resin layer 126, the light emitted from the light-emitting layer can be reflected by the reflective film. Thereby, the light extraction efficiency can be further improved.

[0139] The layer 128 is a part of the protective layer (also called a mask layer, a sacrificial layer) that remains to protect the organic layer 112 when etching the organic layer 112. The layer 128 can use the materials that can be used for the above-mentioned insulating layer 125. In particular, it is preferable that both the layer 128 and the insulating layer 125 use the same material, so that the same processing devices, etc. can be used.

[0140] In particular, since metal oxide films such as an aluminum oxide film and a hafnium oxide film formed by the ALD method, inorganic insulating films such as a silicon oxide film, are films with fewer pinholes, the function of protecting the EL layer is excellent, so they can be suitably used for the insulating layer 125 and the layer 128.

[0141] The protective layer 121 may, for example, have a single-layer structure or a laminated structure including at least an inorganic insulating film. As the inorganic insulating film, for example, oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, or a hafnium oxide film can be cited. Alternatively, as the protective layer 121, a semiconductor material or a conductive material such as indium gallium oxide, indium zinc oxide, indium tin oxide, or indium gallium zinc oxide can also be used.

[0142] As the protective layer 121, a laminated film of an inorganic insulating film and an organic insulating film can also be used. For example, it is preferable to sandwich an organic insulating film between a pair of inorganic insulating films. In addition, the organic insulating film is preferably used as a planarizing film. Therefore, the top surface of the organic insulating film can be made flat, so the coverage of the inorganic insulating film thereon is improved, and thus the barrier property can be improved. In addition, the top surface of the protective layer 121 becomes flat, so when a structure (for example, a color filter, an electrode of a touch sensor, or a lens array, etc.) is provided above the protective layer 121, the influence caused by the uneven shape of the underlying structure can be reduced, which is preferable.

[0143] Figure 8C A connection portion 140 showing the connection electrode 111C and the common electrode 113 being electrically connected is shown. In the connection portion 140, an opening is provided in the insulating layer 125 and the resin layer 126 on the connection electrode 111C. At this opening, the connection electrode 111C and the common electrode 113 are electrically connected.

[0144] Note that Figure 8C A connection portion 140 showing the connection electrode 111C and the common electrode 113 being electrically connected is shown, but the common electrode 113 may also be provided on the connection electrode 111C with the common layer 114 interposed therebetween. In particular, in the case where the carrier injection layer is used as the common layer 114, etc., the resistivity of the material for the common layer 114 is sufficiently low and its film thickness is also very thin, so in many cases, there is no problem even if the common layer 114 is located in the connection portion 140. Thus, the common electrode 113 and the common layer 114 can be formed using the same masking mask, so the manufacturing cost can be reduced.

[0145] [Structural Example 2]

[0146] Hereinafter, a display panel in which some structures are different from those in the above Structural Example 1 will be described. Note that the description of the parts that are the same as those in the above Structural Example 1 may be omitted with reference to the above Structural Example 1.

[0147] Figure 9A It is a cross-sectional schematic diagram of the display panel 100a. The main differences between the display panel 100a and the display panel 100 are: the structure of the light-emitting element; and the former includes a coloring layer.

[0148] The display panel 100a includes a light-emitting element 110W that emits white light. The light-emitting element 110W includes a pixel electrode 111, an organic layer 112W, a common layer 114, and a common electrode 113. The organic layer 112W exhibits white light emission. For example, the organic layer 112W may include two or more light-emitting materials whose emission colors are in a complementary color relationship. For example, the organic layer 112W may include a light-emitting organic compound that emits red light, a light-emitting organic compound that emits green light, and a light-emitting organic compound that emits blue light. Additionally, it may also include a light-emitting organic compound that emits blue light and a light-emitting organic compound that emits yellow light.

[0149] Between two adjacent light-emitting elements 110W, the respective organic layers 112W are separated. Thereby, leakage current flowing between adjacent light-emitting elements 110W through the organic layer 112W can be suppressed, and crosstalk caused by this leakage current can be suppressed. Therefore, a display panel with high contrast and color reproducibility can be achieved.

[0150] An insulating layer 122 serving as a planarization film is provided on the protective layer 121, and a coloring layer 116R, a coloring layer 116G, and a coloring layer 116B are provided on the insulating layer 122.

[0151] As the insulating layer 122, an organic resin film or an inorganic insulating film with a planarized top surface can be used. Since the insulating layer 122 is the formation surface of the coloring layer 116R, the coloring layer 116G, and the coloring layer 116B, the thickness of the coloring layer 116R etc. can be made uniform when the top surface of the insulating layer 122 is planar, thereby improving color purity. Note that when the thickness of the coloring layer 116R etc. is non-uniform, the light absorption amount varies according to the region in the coloring layer 116R, which may cause a decrease in color purity.

[0152] [Structural Example 3]

[0153] Figure 9B is a cross-sectional schematic diagram of the display panel 100b.

[0154] The light-emitting element 110R includes a pixel electrode 111, a conductive layer 115R, an organic layer 112W, and a common electrode 113. The light-emitting element 110G includes a pixel electrode 111, a conductive layer 115G, an organic layer 112W, and a common electrode 113. The light-emitting element 110B includes a pixel electrode 111, a conductive layer 115B, an organic layer 112W, and a common electrode 113. The conductive layer 115R, the conductive layer 115G, and the conductive layer 115B all have light transmissivity and are used as optical adjustment layers.

[0155] A microcavity resonator (microcavity) structure can be achieved by using a film that reflects visible light as the pixel electrode 111 and a film that has both reflectivity and transmissivity to visible light as the common electrode 113. At this time, by adjusting the thicknesses of the conductive layer 115R, the conductive layer 115G, and the conductive layer 115B in such a way as to achieve the most suitable optical path length, even when using the organic layer 112 that emits white light, light with different wavelengths can be extracted from the light-emitting elements 110R, the light-emitting element 110G, and the light-emitting element 110B, and the enhanced light can be obtained.

[0156] Moreover, by respectively providing the color filter layers 116R, the color filter layer 116G, and the color filter layer 116B on the optical paths of the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B, light with high color purity can be extracted.

[0157] In addition, an insulating layer 123 is provided to cover the ends of the pixel electrode 111, the conductive layer 115R, the conductive layer 115G, and the conductive layer 115B. The end of the insulating layer 123 preferably has a tapered shape. By providing the insulating layer 123, the coverage of the organic layer 112W, the common electrode 113, the protective layer 121, etc. formed thereon can be improved.

[0158] The organic layer 112W and the common electrode 113 are respectively provided as a continuous film in each light-emitting element. By adopting such a structure, the manufacturing process of the display panel can be greatly simplified, so it is preferable.

[0159] Here, the end of the pixel electrode 111 preferably has an almost vertical shape. Thereby, a steeply inclined portion can be formed on the surface of the insulating layer 123, and a thin portion can be formed in a part of the organic layer 112W covering this portion, or a part of the organic layer 112W can be separated. Thereby, leakage current generated between adjacent light-emitting elements through the organic layer 112W can be suppressed without processing the organic layer 112W using photolithography or the like.

[0160] The above describes an example of the structure of the display panel.

[0161] [Pixel layout]

[0162] Hereinafter, mainly described is Figure 8A a pixel layout different from

[0163] As the top surface shape of the sub-pixel, for example, polygons such as triangles, quadrilaterals (including rectangles, squares), pentagons, etc., rounded shapes of these polygons, ellipses, or circles can be cited. Here, the top surface shape of the sub-pixel corresponds to the top surface shape of the light-emitting region of the light-emitting element.

[0164] Figure 10A The pixel 150 shown adopts an S stripe arrangement. Figure 10A The pixel 150 shown is composed of three sub-pixels, namely light-emitting elements 110a, 110b, and 110c. For example, the light-emitting element 110a, the light-emitting element 110b, and the light-emitting element 110c can be a blue light-emitting element, a red light-emitting element, and a green light-emitting element, respectively.

[0165] Figure 10B The pixel 150 shown includes a light-emitting element 110a having a top surface shape of an approximate trapezoid or an approximate triangle with rounded corners, a light-emitting element 110b having a top surface shape of an approximate trapezoid or an approximate triangle with rounded corners, and a light-emitting element 110c having a top surface shape of an approximate quadrilateral or an approximate hexagon with rounded corners. In addition, the light-emitting area of the light-emitting element 110a is larger than that of the light-emitting element 110b. Thus, the shapes and sizes of the respective light-emitting elements can be determined independently. For example, the size of a light-emitting element with high reliability can be smaller. For example, the light-emitting element 110a, the light-emitting element 110b, and the light-emitting element 110c can be a green light-emitting element, a red light-emitting element, and a blue light-emitting element, respectively.

[0166] Figure 10C The pixels 124a and 124b shown adopt a Pentile arrangement. Figure 10C An example is shown in which pixels 124a including light-emitting elements 110a and 110b and pixels 124b including light-emitting elements 110b and 110c are alternately arranged. For example, the light-emitting element 110a, the light-emitting element 110b, and the light-emitting element 110c can also be a red light-emitting element, a green light-emitting element, and a blue light-emitting element, respectively.

[0167] Figure 10D and Figure 10E The pixels 124a and 124b shown adopt a Delta arrangement. The pixel 124a includes two light-emitting elements (light-emitting elements 110a and 110b) in the upper row (the first row) and one light-emitting element (light-emitting element 110c) in the lower row (the second row). The pixel 124b includes one light-emitting element (light-emitting element 110c) in the upper row (the first row) and two light-emitting elements (light-emitting elements 110a and 110b) in the lower row (the second row). For example, the light-emitting element 110a, the light-emitting element 110b, and the light-emitting element 110c can also be a red light-emitting element, a green light-emitting element, and a blue light-emitting element, respectively.

[0168] Figure 10D An example is shown in which each light-emitting element has a top surface shape of an approximate quadrilateral with rounded corners, Figure 10E An example is shown in which each light-emitting element has a top surface shape of a circle.

[0169] Figure 10F An example is shown in which the light-emitting elements of each color are arranged in a zigzag shape. Specifically, in a plan view, the positions of the upper sides of two light-emitting elements arranged in the row direction (for example, light-emitting element 110a and light-emitting element 110b or light-emitting element 110b and light-emitting element 110c) do not coincide. For example, light-emitting element 110a, light-emitting element 110b, and light-emitting element 110c may be a red light-emitting element, a green light-emitting element, and a blue light-emitting element, respectively.

[0170] In photolithography, the finer the pattern to be processed, the more the influence of light diffraction cannot be ignored. Therefore, when transferring the pattern of the photomask by exposure, the fidelity decreases, and it is difficult to process the resist mask into the desired shape. Therefore, even if the pattern of the photomask is rectangular, it is easy to form a pattern with rounded corners. Therefore, the top surface shape of the light-emitting element sometimes has a polygonal shape with rounded corners, an oval shape, or a circular shape, etc.

[0171] Furthermore, in the manufacturing method of the display panel according to one embodiment of the present invention, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat-resistant temperature of the EL layer. Therefore, depending on the heat-resistant temperature of the material of the EL layer and the curing temperature of the resist material, the curing of the resist film may sometimes be insufficient. The insufficiently cured resist film may sometimes have a shape that deviates from the desired shape when being processed. As a result, the top surface shape of the EL layer sometimes has a polygonal shape with rounded corners, an oval shape, or a circular shape, etc. For example, when a resist mask with a square top surface shape is to be formed, a resist mask with a circular top surface shape may sometimes be formed and the top surface shape of the EL layer is circular.

[0172] In order to make the top surface shape of the EL layer the desired shape, a technique of pre-correcting the mask pattern so that the designed pattern and the transferred pattern coincide (OPC (Optical Proximity Correction) technique) can also be used. Specifically, in the OPC technique, correction patterns are added to the graphic corners etc. on the mask pattern.

[0173] The layout of the pixels has been described above.

[0174] At least a part of this embodiment can be implemented in appropriate combination with other embodiments and examples described in this specification.

[0175] (Embodiment 3)

[0176] In this embodiment, other structural examples of the display panel of the electronic device applicable to one embodiment of the present invention will be described.

[0177] The display panel of the present embodiment is a high-definition display panel, which is particularly suitable for use in the display unit of wearable devices such as head-mounted displays for VR devices and glasses-type AR devices that can be worn on the head.

[0178] [Display module]

[0179] Figure 11A A perspective view showing the display module 280 is presented. The display module 280 includes a display panel 200A and an FPC 290. Note that the display panel included in the display module 280 is not limited to the display panel 200A, and can also be any one of the display panels 200B to 200F to be described later.

[0180] The display module 280 includes a substrate 291 and a substrate 292. The display module 280 includes a display portion 281. The display portion 281 is an area for displaying an image.

[0181] Figure 11B A perspective schematic view showing the structure on the side of the substrate 291 is presented. A circuit portion 282 is laminated on the substrate 291, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283. In addition, a terminal portion 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected through a wiring portion 286 composed of a plurality of wirings.

[0182] The pixel portion 284 includes a plurality of pixels 284a arranged periodically. Figure 11B An enlarged view of one pixel 284a is shown on the right side. The pixel 284a includes a light-emitting element 110R that emits red light, a light-emitting element 110G that emits green light, and a light-emitting element 110B that emits blue light.

[0183] The pixel circuit portion 283 includes a plurality of pixel circuits 283a arranged periodically. One pixel circuit 283a controls the light emission of three light-emitting devices included in one pixel 284a. One pixel circuit 283a can include three circuits for controlling the light emission of one light-emitting device. For example, the pixel circuit 283a can adopt a structure having at least one selection transistor, one current control transistor (driving transistor), and a capacitor for one light-emitting device. At this time, the gate of the selection transistor is input with a gate signal, and the source is input with a source signal. Thus, an active matrix type display panel can be realized.

[0184] The circuit section 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit section 283. For example, it preferably includes one or both of a gate line driving circuit and a source line driving circuit. In addition, it may also have at least one of an arithmetic circuit, a storage circuit, a power supply circuit, etc. Further, the transistors provided in the circuit section 282 may also form part of the pixel circuit 283a. That is to say, the pixel circuit 283a may be constituted by the transistors included in the pixel circuit section 283 and the transistors included in the circuit section 282.

[0185] The FPC 290 serves as a wiring for supplying a video signal, a power supply potential, etc. from the outside to the circuit section 282. In addition, an IC may also be mounted on the FPC 290.

[0186] The display module 280 may adopt a structure in which one or both of the pixel circuit section 283 and the circuit section 282 are overlapped and provided on the lower side of the pixel section 284, so the display section 281 can have an extremely high aperture ratio (effective display area ratio). For example, the aperture ratio of the display section 281 may be 40% or more and less than 100%, preferably 50% or more and 95% or less, more preferably 60% or more and 95% or less. In addition, the pixels 284a can be arranged at an extremely high density, whereby the display section 281 can have extremely high clarity. For example, the pixels 284a of the display section 281 are preferably arranged with a clarity of 2000 ppi or more, more preferably 3000 ppi or more, further preferably 5000 ppi or more, still more preferably 6000 ppi or more and 20000 ppi or less or 30000 ppi or less.

[0187] Such a display module 280 is very clear, so it is suitable for VR devices such as head-mounted displays or glasses-type AR devices. For example, because the display module 280 has a display section 281 with extremely high clarity, in the structure of viewing the display section of the display module 280 through a lens, even if the display section is magnified by the lens, the user cannot see the pixels, whereby a display with a high sense of immersion can be realized. In addition, the display module 280 is not limited thereto and can also be applied to electronic devices having a relatively small display section. For example, it is suitable for the display section of wearable electronic devices such as watch-type devices.

[0188] [Display panel 200A]

[0189] Figure 12 The shown display panel 200A includes a substrate 301, light-emitting elements 110R, 110G, 110B, a capacitor 240, and a transistor 310.

[0190] The substrate 301 corresponds to Figure 11A and Figure 11B the substrate 291 in

[0191] The transistor 310 is a transistor having a channel formation region in a substrate 301. As the substrate 301, for example, a semiconductor substrate such as a single crystal silicon substrate can be used. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 is used as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and is used as a gate insulating layer. The low-resistance region 312 is a region in the substrate 301 doped with impurities and is used as one of a source and a drain. The insulating layer 314 covers the side surfaces of the conductive layer 311.

[0192] In addition, between two adjacent transistors 310, an element isolation layer 315 is provided in a manner of being embedded in the substrate 301.

[0193] In addition, an insulating layer 261 is provided to cover the transistor 310, and a capacitor 240 is provided on the insulating layer 261.

[0194] The capacitor 240 includes a conductive layer 241, a conductive layer 245, and an insulating layer 243 located between them. The conductive layer 241 serves as one electrode of the capacitor 240, the conductive layer 245 serves as the other electrode of the capacitor 240, and the insulating layer 243 serves as a dielectric of the capacitor 240.

[0195] The conductive layer 241 is provided on the insulating layer 261 and is embedded in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 through a plug 271 embedded in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0196] An insulating layer 255a is provided to cover the capacitor 240, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b.

[0197] The insulating layer 255a, the insulating layer 255b, and the insulating layer 255c can appropriately use an inorganic insulating film. For example, preferably, a silicon oxide film is used as the insulating layer 255a and the insulating layer 255c, and a silicon nitride film is used as the insulating layer 255b. Thus, the insulating layer 255b can be used as an etching protection film. Although an example in which a part of the insulating layer 255c is etched to provide a recess is shown in the present embodiment, a recess may not be provided in the insulating layer 255c.

[0198] A light-emitting element 110R, a light-emitting element 110G, and a light-emitting element 110B are provided on the insulating layer 255c. The structures of the light-emitting element 110R, the light-emitting element 110G, and the light-emitting element 110B can be referred to in Embodiment 2.

[0199] The display panel 200A forms light-emitting elements for each light-emitting color, so the chromaticity change between low-brightness light emission and high-brightness light emission is small. In addition, the organic layers 112R, 112G, and 112B are separated from each other, so even if a high-definition display panel is used, crosstalk between adjacent sub-pixels can be suppressed. Therefore, a display panel with high definition and high display quality can be realized.

[0200] An insulating layer 125, a resin layer 126, and a layer 128 are provided in the region between adjacent light-emitting elements.

[0201] The pixel electrodes 111R, 111G, and 111B of the light-emitting elements are electrically connected to one of the source and drain of the transistor 310 through plugs 256 embedded in the insulating layers 255a, 255b, and 255c, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255c is the same as or substantially the same as the height of the top surface of the plug 256. Various conductive materials can be used as the plug.

[0202] In addition, a protective layer 121 is provided on the light-emitting elements 110R, 110G, and 110B. A substrate 170 is attached to the protective layer 121 by an adhesive layer 171.

[0203] No insulating layer covering the top end portion of the pixel electrode 111 is provided between two adjacent pixel electrodes 111. Therefore, the interval between adjacent light-emitting elements can be made very small. Therefore, a display panel with high definition or high resolution can be realized.

[0204] [Display panel 200B]

[0205] Figure 13 The shown display panel 200B has a structure in which a transistor 310A and a transistor 310B that form channels in a semiconductor substrate are stacked. Note that in the description of the display panel to be described later, parts that are the same as those of the previously described display panel may sometimes be omitted from the description.

[0206] The display panel 200B has the following structure: a substrate 301B provided with a transistor 310B, a capacitor 240, and a light-emitting device is attached to a substrate 301A provided with a transistor 310A.

[0207] Here, an insulating layer 345 is provided on the bottom surface of the substrate 301B, and an insulating layer 346 is provided on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers used as protective layers, and can suppress the diffusion of impurities into the substrate 301B and the substrate 301A. As the insulating layers 345 and 346, an inorganic insulating film that can be used for the protective layer 121 can be used.

[0208] A plug 343 is provided in the substrate 301B, passing through the substrate 301B and the insulating layer 345. Here, preferably, an insulating layer 344 is provided on the side surface of the plug 343 as a protective layer.

[0209] In addition, a conductive layer 342 is provided on the lower side of the insulating layer 345 in the substrate 301B. The conductive layer 342 is embedded in the insulating layer 335, and the bottom surfaces of the conductive layer 342 and the insulating layer 335 are planarized. In addition, the conductive layer 342 is electrically connected to the plug 343.

[0210] On the other hand, a conductive layer 341 is provided on the insulating layer 346 of the substrate 301A. The conductive layer 341 is embedded in the insulating layer 336, and the top surfaces of the conductive layer 341 and the insulating layer 336 are planarized.

[0211] Preferably, the same conductive material is used for the conductive layer 341 and the conductive layer 342. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, W or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) having the above elements as components can be used. Particularly preferably, copper is used as the conductive layer 341 and the conductive layer 342. Thus, a Cu - Cu (copper - copper) direct bonding technique (a technique for electrically connecting by connecting pads of Cu (copper) to each other) can be adopted.

[0212] [Display panel 200C]

[0213] Figure 14 The shown display panel 200C has a structure in which the conductive layer 341 and the conductive layer 342 are bonded by bumps 347.

[0214] As Figure 14 shown, by providing bumps 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bumps 347 can be formed, for example, using a conductive material containing gold (Au), nickel (Ni), indium (In), tin (Sn), etc. In addition, for example, solder is sometimes used as the bumps 347. In addition, an adhesive layer 348 can also be provided between the insulating layer 345 and the insulating layer 346. In addition, when providing the bumps 347, the insulating layer 335 and the insulating layer 336 may not be provided.

[0215] [Display panel 200D]

[0216] Figure 15 The main difference between the shown display panel 200D and the display panel 200A lies in the structure of the transistor.

[0217] The transistor 320 is a transistor (OS transistor) that uses a metal oxide (also referred to as an oxide semiconductor) in a semiconductor layer where a channel is formed.

[0218] The transistor 320 includes a semiconductor layer 321, an insulating layer 323, a conductive layer 324, a pair of conductive layers 325, an insulating layer 326, and a conductive layer 327.

[0219] The substrate 331 corresponds to Figure 11A and Figure 11B the substrate 291 in

[0220] An insulating layer 332 is provided on the substrate 331. The insulating layer 332 serves as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 into the transistor 320 and prevents oxygen from escaping from the semiconductor layer 321 to the side of the insulating layer 332. As the insulating layer 332, for example, a film such as an alumina film, a hafnium oxide film, a silicon nitride film, etc., which is less likely to allow hydrogen or oxygen to diffuse compared to a silicon oxide film, can be used.

[0221] A conductive layer 327 is provided on the insulating layer 332, and an insulating layer 326 is provided so as to cover the conductive layer 327. The conductive layer 327 serves as the first gate electrode of the transistor 320, and a part of the insulating layer 326 serves as the first gate insulating layer. At least the part of the insulating layer 326 that contacts the semiconductor layer 321 is preferably an oxide insulating film such as a silicon oxide film. The top surface of the insulating layer 326 is preferably planarized.

[0222] The semiconductor layer 321 is provided on the insulating layer 326. The semiconductor layer 321 preferably contains a metal oxide (also referred to as an oxide semiconductor) film that exhibits semiconductor characteristics. A pair of conductive layers 325 are in contact with the semiconductor layer 321 and serve as source electrodes and drain electrodes.

[0223] An insulating layer 328 is provided so as to cover the top surface and side surfaces of the pair of conductive layers 325 and the side surface of the semiconductor layer 321, etc., and an insulating layer 264 is provided on the insulating layer 328. The insulating layer 328 serves as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 264, etc., into the semiconductor layer 321 and prevents oxygen from escaping from the semiconductor layer 321. As the insulating layer 328, the same insulating film as the above-mentioned insulating layer 332 can be used.

[0224] An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264. An insulating layer 323 that contacts the top surface of the semiconductor layer 321 and a conductive layer 324 are embedded inside the opening. The conductive layer 324 serves as the second gate electrode, and the insulating layer 323 serves as the second gate insulating layer.

[0225] The top surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or substantially the same, and the insulating layer 329 and the insulating layer 265 are provided in a manner covering them.

[0226] The insulating layer 264 and the insulating layer 265 are used as interlayer insulating layers. The insulating layer 329 is used as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can use the same insulating film as the above-mentioned insulating layer 328 and insulating layer 332.

[0227] The plug 274 electrically connected to one of the pair of conductive layers 325 is embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably has a conductive layer 274a covering the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 respectively and a part of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. At this time, as the conductive layer 274a, a conductive material that is not easily diffusible of hydrogen and oxygen is preferably used.

[0228] There is no particular limitation on the structure of the transistor included in the display panel of the present embodiment. For example, a planar transistor, a staggered transistor, or a reverse staggered transistor or the like can be used. In addition, a top-gate type or bottom-gate type transistor structure can also be adopted. Alternatively, a gate can be provided above and below the semiconductor layer forming the channel.

[0229] As the transistor 320, a structure in which two gates sandwich the semiconductor layer forming the channel is adopted. In addition, the two gates can also be connected, and the transistor can be driven by supplying the same signal to the two gates. Alternatively, the threshold voltage of the transistor can be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.

[0230] There is no particular limitation on the crystallinity of the semiconductor material of the semiconductor layer for the transistor, and an amorphous semiconductor, a single crystal semiconductor, or a semiconductor having crystallinity other than a single crystal semiconductor (microcrystalline semiconductor, polycrystalline semiconductor, or a semiconductor having a crystalline region in a part thereof) can be used. When a single crystal semiconductor or a semiconductor having crystallinity is used, deterioration of the transistor characteristics can be suppressed, so it is preferable.

[0231] The band gap of the metal oxide of the semiconductor layer for the transistor is preferably 2 eV or more, and more preferably 2.5 eV or more. By using a metal oxide having a wider band gap, the off-state current of the OS transistor can be reduced.

[0232] The metal oxide preferably contains at least indium or zinc, more preferably contains indium and zinc. For example, the metal oxide preferably contains indium, M (M is one or more selected from gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and cobalt), and zinc.

[0233] Alternatively, the semiconductor layer of the transistor may also contain silicon. Examples of silicon include amorphous silicon, crystalline silicon (such as low-temperature polysilicon, single-crystalline silicon, etc.).

[0234] Examples of the metal oxide that can be used for the semiconductor layer include indium oxide, gallium oxide, and zinc oxide. In addition, the metal oxide preferably contains two or three selected from indium, element M, and zinc. Element M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium. In particular, element M is preferably one or more selected from aluminum, gallium, yttrium, and tin.

[0235] Note that when the metal oxide is used for the semiconductor layer, the metal oxide is preferably formed by a sputtering method or an ALD method. When the metal oxide is formed by the sputtering method, the productivity can be improved and the film density can be increased. When the metal oxide is formed by the ALD method, the film coverage can be improved.

[0236] In particular, as the metal oxide for the semiconductor layer, an oxide containing indium, gallium, and zinc (also denoted as IGZO) is preferably used. Alternatively, an oxide containing indium, tin, and zinc (also denoted as ITZO (registered trademark)) is preferably used. Alternatively, an oxide containing indium, gallium, tin, and zinc is preferably used. Alternatively, an oxide containing indium, aluminum, and zinc (also called IAZO) is preferably used. Alternatively, an oxide containing indium, aluminum, gallium, and zinc (also called IAGZO) is preferably used.

[0237] When the metal oxide for the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of the atomic ratios of the metal elements in such an In-M-Zn oxide include compositions such as In:M:Zn = 1:1:1 or those near it, In:M:Zn = 1:1:1.2 or those near it, In:M:Zn = 1:3:2 or those near it, In:M:Zn = 1:3:4 or those near it, In:M:Zn = 2:1:3 or those near it, In:M:Zn = 3:1:2 or those near it, In:M:Zn = 4:2:3 or those near it, In:M:Zn = 4:2:4.1 or those near it, In:M:Zn = 5:1:3 or those near it, In:M:Zn = 5:1:6 or those near it, In:M:Zn = 5:1:7 or those near it, In:M:Zn = 5:1:8 or those near it, In:M:Zn = 6:1:6 or those near it, In:M:Zn = 5:2:5 or those near it. Note that the compositions near it include the range of ±30% of the desired atomic ratio.

[0238] Preferably, gallium or tin is used as the element M. In addition, multiple of the above elements may be combined as the element M. Further, preferably, a metal oxide with In:M:Zn = 40:1:10 and those near it is used for the semiconductor layer. Specifically, an In:Sn:Zn = 40:1:10 metal oxide and those near it can be appropriately used.

[0239] For example, when it is described that the atomic ratio is In:Ga:Zn = 4:2:3 or those near it, it includes the following cases: when In is 4, Ga is 1 or more and 3 or less, and Zn is 2 or more and 4 or less. In addition, when it is described that the atomic ratio is In:Ga:Zn = 5:1:6 or those near it, it includes the following cases: when In is 5, Ga is greater than 0.1 and 2 or less, and Zn is 5 or more and 7 or less. In addition, when it is described that the atomic ratio is In:Ga:Zn = 1:1:1 or those near it, it includes the following cases: when In is 1, Ga is greater than 0.1 and 2 or less, and Zn is greater than 0.1 and 2 or less.

[0240] The semiconductor layer may also include two or more metal oxide layers with different compositions. For example, a stacked structure of a first metal oxide layer with In:M:Zn = 1:3:4 [atomic ratio] or those near it and a second metal oxide layer with In:M:Zn = 1:1:1 [atomic ratio] or those near it provided on the first metal oxide layer can be appropriately used. In addition, gallium or aluminum is particularly preferably used as the element M.

[0241] In addition, for example, a stacked structure of any one selected from indium oxide, indium gallium oxide, and IGZO and any one selected from IAZO, IAGZO, and ITZO (registered trademark) can also be used.

[0242] Examples of the crystalline oxide semiconductor include CAAC (c-axis-aligned crystalline)-OS, nc (nanocrystalline)-OS, and the like.

[0243] Compared with a transistor using amorphous silicon, the field-effect mobility of an OS transistor is very high. In addition, the leakage current between the source and drain in the off state of the OS transistor (also referred to as the off-state current) is extremely low, and the charge stored in the capacitor connected in series with the transistor can be maintained for a long period. In addition, by using an OS transistor, the power consumption of the display panel can be reduced.

[0244] In addition, when increasing the emission luminance of the light-emitting device included in the pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. For this purpose, it is necessary to increase the voltage between the source and drain of the driving transistor included in the pixel circuit. Since the breakdown voltage between the source and drain of the OS transistor is higher than that of the Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Thus, by using an OS transistor as the driving transistor included in the pixel circuit, the amount of current flowing through the light-emitting device can be increased to improve the emission luminance of the light-emitting device.

[0245] In addition, when the transistor operates in the saturation region, compared with the Si transistor, the change in the source-drain current with respect to the change in the gate-source voltage of the OS transistor is small. Therefore, by using an OS transistor as the driving transistor included in the pixel circuit, the current flowing between the source and drain can be determined in detail according to the change in the gate-source voltage, so the amount of current flowing through the light-emitting device can be controlled. Thus, the number of gray levels of the pixel circuit can be increased.

[0246] In addition, regarding the saturation characteristics of the current flowing when the transistor operates in the saturation region, compared with the Si transistor, the OS transistor can cause a stable current (saturation current) to flow even when gradually increasing the voltage between the source and drain. Therefore, by using the OS transistor as the driving transistor, even if, for example, the current-voltage characteristics of the EL device are uneven, a stable current can flow through the light-emitting device. That is, when the OS transistor operates in the saturation region and the voltage between the source and drain is increased, the source-drain current hardly changes, so the emission luminance of the light-emitting device can be stabilized.

[0247] As described above, by using an OS transistor as a driving transistor included in a pixel circuit, it is possible to achieve "reduction of power consumption", "increase in emission luminance", "multi-gray scale", "suppression of unevenness of light-emitting devices", etc.

[0248] [Display panel 200F]

[0249] In Figure 16 In the display panel 200F shown, a transistor 310 having a channel formed on a substrate 301 and a transistor 320 having a semiconductor layer forming the channel containing a metal oxide are stacked.

[0250] An insulating layer 261 is provided so as to cover the transistor 310, and a conductive layer 251 is provided on the insulating layer 261. In addition, an insulating layer 262 is provided so as to cover the conductive layer 251, and a conductive layer 252 is provided on the insulating layer 262. Both the conductive layer 251 and the conductive layer 252 are used as wirings. In addition, an insulating layer 263 and an insulating layer 332 are provided so as to cover the conductive layer 252, and a transistor 320 is provided on the insulating layer 332. In addition, an insulating layer 265 is provided so as to cover the transistor 320, and a capacitor 240 is provided on the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected through a plug 274.

[0251] The transistor 320 can be used as a transistor constituting a pixel circuit. In addition, the transistor 310 can be used as a transistor constituting a pixel circuit or a transistor constituting a driving circuit (gate line driving circuit, source line driving circuit) for driving the pixel circuit. In addition, the transistor 310 and the transistor 320 can be used as transistors constituting various circuits such as an arithmetic circuit or a storage circuit.

[0252] With this structure, not only a pixel circuit but also a driving circuit or the like can be formed directly under the light-emitting device. Therefore, compared with the case where the driving circuit is provided around the display area, the display panel can be miniaturized.

[0253] [Display panel 200G]

[0254] Figure 17 The display panel 200G shown has a structure in which a transistor 320A (vertical transistor) is used instead of the transistor 320 of the Figure 16 display panel 200F shown. In addition, the structure in which the transistor 320A is used instead of the transistor 320 can also be used for the Figure 15 display panel 200D shown.

[0255] Figure 18A is a cross-sectional view of the XZ plane of the transistor 320A. In addition, Figure 18B is a cross-sectional view of the XY plane including a wiring 440.

[0256] The transistor 320A includes an oxide semiconductor 470, an insulator 430, and a conductor 420. The oxide semiconductor 470 is used as a semiconductor layer, the insulator 430 is used as a gate insulator, and the conductor 420 is used as a gate electrode. In addition, the wiring 450 has a region that serves as one of the source electrode and the drain electrode of the transistor 320A. In addition, the wiring 440 has a region that serves as the other of the source electrode and the drain electrode of the transistor 320A.

[0257] An opening 490 reaching the wiring 450 is provided so as to penetrate the wiring 440 and the insulator 480. The top surface of the opening 490 has a substantially circular columnar shape. By adopting such a structure, miniaturization or high integration of the memory cell can be achieved. Note that the side surface of the opening 490 is preferably perpendicular to the top surface of the wiring 450.

[0258] At least a part of the oxide semiconductor 470 is disposed in the opening 490. The oxide semiconductor 470 has a region in contact with the top surface of the wiring 450, a region in contact with the side surface of the wiring 440, and a region in contact with the side surface of the insulator 480 in the opening 490.

[0259] The insulator 430 is disposed so as to cover at least a part of the opening 490. The conductor 420 is disposed so that at least a part of it is located in the opening 490. Note that the conductor 420 is preferably disposed so as to be embedded in the opening 490, and its top surface shape is preferably substantially circular in order to improve the integration degree.

[0260] As Figure 18A shown, the oxide semiconductor 470 has a region 470i, regions 470na and 470nb provided so as to sandwich the region 470i.

[0261] The region 470na is a region of the oxide semiconductor 470 that contacts the wiring 450. At least a part of the region 470na is used as one of the source region and the drain region of the transistor 320A. The region 470nb is a region of the oxide semiconductor 470 that contacts the wiring 440. At least a part of the region 470nb is used as the other of the source region and the drain region of the transistor 320A. As Figure 18B shown, the wiring 440 contacts the entire outer periphery of the oxide semiconductor 470. Therefore, the other of the source region and the drain region of the transistor 320A may be formed on the entire outer periphery of the portion of the oxide semiconductor 470 formed in the same layer as the wiring 440.

[0262] Region 470i is the region between region 470na and region 470nb in oxide semiconductor 470. At least a part of region 470i is used as the channel formation region of transistor 320A. That is to say, the channel formation region of transistor 320A is formed in a part of oxide semiconductor 470 in the region located between wiring 450 and wiring 440. In addition, it can also be said that the channel formation region of transistor 320A is located in the region of oxide semiconductor 470 that contacts insulator 480 or in the vicinity of such a region.

[0263] The channel length of transistor 320A is the distance between the source region and the drain region. In other words, it can be said that the channel length of transistor 320A is determined according to the thickness of insulator 480 on wiring 450. In Figure 18A it, the channel length L of transistor 320A is indicated by a double-headed arrow in dashed line. When viewed in cross section, the channel length L is the distance between the end of the region where oxide semiconductor 470 and wiring 450 contact and the end of the region where oxide semiconductor 470 and wiring 440 contact. That is to say, the channel length L corresponds to the length of the side on the opening 490 side of insulator 480 when viewed in cross section.

[0264] In existing transistors, the channel length is set according to the exposure limit of photolithography, but in one aspect of the present invention, the channel length can be set according to the thickness of insulator 480. Therefore, the channel length of transistor 320A can be set to a very fine structure below the exposure limit of photolithography (for example, 60 nm or less, 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or less, or 10 nm or less and 1 nm or more or 5 nm or more). Thereby, the on-state current of transistor 320A can be increased.

[0265] Furthermore, as described above, the channel formation region, the source region, and the drain region can be formed in opening 490. Therefore, compared with existing transistors in which the channel formation region, the source region, and the drain region are respectively provided in the XY plane, the occupied area of transistor 320A can be reduced. Thereby, the pixel density can be increased.

[0266] In this way, a transistor having a channel formation region along the side of insulator 480 in opening 490 is also called a vertical transistor.

[0267] In addition, in the XY plane including the channel formation region of oxide semiconductor 470, compared with Figure 18BSimilarly, the oxide semiconductor 470, the insulator 430, and the conductor 420 are arranged in concentric circles. Therefore, the side surface of the conductor 420 disposed at the center faces the side surface of the oxide semiconductor 470 with the insulator 430 therebetween. In other words, the entire outer periphery of the oxide semiconductor 470 becomes a channel formation region in a plan view. At this time, for example, the channel width of the transistor 320A is determined according to the length of the outer periphery of the oxide semiconductor 470. That is to say, it can be said that the channel width of the transistor 320A is determined according to the size of the maximum width of the opening 490 (the maximum diameter in the case where the shape of the opening 490 in a plan view is circular). In Figure 18A and Figure 18B , the maximum width D of the opening 490 is indicated by a double-headed arrow of a long dashed-dotted line. In Figure 18B , the channel width W of the transistor 320A is indicated by a double-headed arrow of a dotted line. By increasing the size of the maximum width D of the opening 490, the channel width per unit area can be increased to increase the on-state current.

[0268] When forming the opening 490 by photolithography, the maximum width D of the opening 490 is set according to the exposure limit of the photolithography. In addition, the maximum width D of the opening 490 is set according to the respective thicknesses of the oxide semiconductor 470, the insulator 430, and the conductor 420 provided in the opening 490. The maximum width D of the opening 490 is preferably 5 nm or more, 10 nm or more, or 20 nm or more and 100 nm or less, 60 nm or less, 50 nm or less, 40 nm or less, or 30 nm or less, for example. Note that in the case where the shape of the opening 490 in a plan view is circular, the maximum width D of the opening 490 corresponds to the diameter of the opening 490, and the channel width W can be calculated as "D×π".

[0269] In addition, in a storage device according to one embodiment of the present invention, the channel length L of the transistor 320A is preferably at least smaller than the channel width W of the transistor 320A. The channel length L of the transistor 320A according to one embodiment of the present invention is 0.1 times or more and 0.99 times or less of the channel width W of the transistor 320A, and preferably 0.5 times or more and 0.8 times or less. By adopting such a structure, a transistor having good electrical characteristics and high reliability can be realized.

[0270] In addition, by forming the opening 490 to be substantially circular in a plan view, the oxide semiconductor 470, the insulator 430, and the conductor 420 are arranged in concentric circles. As a result, the distance between the conductor 420 and the oxide semiconductor 470 is substantially uniform, so that a gate electric field can be applied to the oxide semiconductor 470 substantially uniformly.

[0271] In the channel formation region of a transistor in which an oxide semiconductor is used for a semiconductor layer, it is preferable that the number of oxygen vacancies is small or the impurity concentration of hydrogen, nitrogen, a metal element, etc. is low compared with the source region and the drain region. For example, the aluminum concentration in the channel formation region of the oxide semiconductor is preferably 1×10 22 atoms / cm 3 or less, more preferably 1×10 21 atoms / cm 3 or less, still more preferably 1×10 20 atoms / cm 3 or less, still more preferably 5×10 19 atoms / cm 3 or less, still more preferably 1×10 19 atoms / cm 3 or less, still more preferably 5×10 18 atoms / cm 3 or less, still more preferably 1×10 18 atoms / cm 3 or less.

[0272] In addition, hydrogen near oxygen vacancies sometimes forms a defect in which hydrogen enters the oxygen vacancy (hereinafter, sometimes referred to as V O H) and generates electrons that become carriers. Therefore, it is also preferable to reduce V O H in the channel formation region. Thus, the channel formation region of the transistor is a high-resistance region with a low carrier concentration. Therefore, the channel formation region of the transistor can be said to be i-type (intrinsic) or substantially i-type.

[0273] In addition, the source region and the drain region of a transistor in which an oxide semiconductor is used for a semiconductor layer are regions where the carrier concentration increases due to more oxygen vacancies, more V O H, or a higher impurity concentration of hydrogen, nitrogen, a metal element, etc. than in the channel formation region, and thus the resistance is lowered. That is, compared with the channel formation region, the source region and the drain region of the transistor are n-type regions with a higher carrier concentration and a lower resistance.

[0274] Note that in Figure 18A etc., the opening 490 is provided such that the side surface of the opening 490 is perpendicular to the top surface of the wiring 450, but the present invention is not limited thereto. For example, the side surface of the opening 490 may have a tapered shape.

[0275] Figure 19A is a cross-sectional view of the XZ plane of the transistor 320B, which is a vertical transistor having a structure different from that of FIG. 18. In addition, Figure 19B is a cross-sectional view of the XY plane.

[0276] The main differences between transistor 320B and transistor 320A are as follows: it does not include wiring 450; it is disposed on insulator 460; it includes wiring 440S and wiring 440D instead of wiring 440; and the shape of oxide semiconductor 470. Wiring 440S is used as the source electrode, and wiring 440D is used as the drain electrode.

[0277] Oxide semiconductor 470 has an annular shape. Specifically, in opening 490, there are regions in contact with the side surfaces of wiring 440S, regions in contact with the side surfaces of wiring 440D, and regions in contact with the side surface of insulator 480. Here, oxide semiconductor 470 does not contact the top surfaces of wiring 440S and wiring 440D. Oxide semiconductor 470 having the above shape can be formed, for example, by processing using anisotropic etching.

[0278] As Figure 19B shown, the widths H of wiring 440S and wiring 440D are smaller than the maximum width D of opening 490. At this time, the circumferential direction of opening 490 corresponds to the channel length direction of transistor 320B. Here, since oxide semiconductor 470 has an annular shape, there are two current paths (i.e., channels) from wiring 440S to wiring 440D. In addition, oxide semiconductor 470 does not necessarily have to have an annular shape, and may have a structure in contact with both wiring 440S and wiring 440D.

[0279] The channel length can be controlled according to the shape and size of opening 490. For example, when it is desired to increase the channel length, the perimeter of opening 490 can be increased. Note that an example where the shape of opening 490 in a top view is circular is shown here, but the present invention is not limited thereto. For example, the shape of opening 490 in a top view can be an ellipse, a quadrangle with rounded corners, etc. in addition to a circle. In addition, it can be a regular polygon such as an equilateral triangle, a square, a regular pentagon, etc., a polygon other than a regular polygon. In addition, when it is a concave polygon such as a star polygon where at least one interior angle exceeds 180 degrees, the channel width can be increased. In addition, an ellipse, a polygon with rounded corners, a closed curve combining a straight line and a curve, etc. can be adopted. At this time, the maximum width of opening 490 is preferably appropriately calculated according to the shape of the uppermost part of opening 490. For example, when the opening is a square or a rectangle in a top view, the maximum width of opening 490 is preferably set to the length of the opposing line of the uppermost part of opening 490.

[0280] In addition, as Figure 19AAs shown, the height of the oxide semiconductor 470 is equivalent to the channel width W of the transistor 320B. Therefore, the channel width W of the transistor 320B can be controlled according to the thickness of the insulator 480. Accordingly, the channel width of the transistor 320B can be set to a very fine structure (e.g., 60 nm or less, 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or less, or 10 nm or less and 1 nm or more or 5 nm or more) below the exposure limit of photolithography.

[0281] The transistor 320A is a transistor capable of making the channel length extremely small and increasing the channel width, and can achieve a high on-state current. On the other hand, the transistor 320B is a transistor capable of making the channel width extremely small and increasing the channel length, can achieve an appropriate on-state current, and is easy to design. The transistor 320A and the transistor 320B can be used as part of the manufacturing process and can be separately manufactured on the same substrate. For example, in a display device, the transistor 320B can be used as a driving transistor for controlling the current flowing through a light-emitting element, and the transistor 320A can be used as a transistor having a switching function.

[0282] At least a part of this embodiment can be implemented in appropriate combination with other embodiments and examples described in this specification.

[0283] [Reference Signs]

[0284] 10: Frame, 11: Metal plate, 12: Protrusion, 13: Holding tool, 20: Housing, 21: Optical device, 22: Recess, 23: Electromagnet, 24: First surface, 30: Multi-joint arm, 32: Axis, 33: Bushing, 34: Spindle, 35: Steel wire rope, 36: Balancer, 37: Control unit, 38: Cable, 50: Ceiling, 60: Display unit, 61: Display panel, 62: Linear polarizer, 63: Phase difference plate, 71: Half mirror, 72: Lens, 73: Phase difference plate, 74: Reflective polarizer, 75: Lens, 80: Pixel, 81: Sub-pixel, 84: Pixel array, 85: Circuit, 86: Circuit, 87: Layer, 88: Layer, 89: Layer, 100a: Display panel, 100b: Display panel, 100: Display panel, 101: Substrate, 110a: Light-emitting element, 110B: Light-emitting element, 110b: Light-emitting element, 110c: Light-emitting element, 110G: Light-emitting element, 110R: Light-emitting element, 110W: Light-emitting element, 110: Light-emitting element, 111B: Pixel electrode, 111C: Connection electrode, 111G: Pixel electrode, 111R: Pixel electrode, 111: Pixel electrode, 112B: Organic layer, 112G: Organic layer, 112R: Organic layer, 112W: Organic layer, 112: Organic layer, 113: Common electrode, 114: Common layer, 115B: Conductive layer, 115G: Conductive layer, 115R: Conductive layer, 116B: Coloring layer, 116G: Coloring layer, 116R: Coloring layer, 121: Protective layer, 122: Insulating layer, 123: Insulating layer, 124a: Pixel, 124b: Pixel, 125: Insulating layer, 126: Resin layer, 128: Layer, 140: Connection part, 150: Pixel, 170: Substrate, 171: Adhesive layer, 200A: Display panel, 200B: Display panel, 200C: Display panel, 200D: Display panel, 200F: Display panel, 200G: Display panel, 240: Capacitor, 241: Conductive layer, 243: Insulating layer, 245: Conductive layer, 251: Conductive layer, 252: Conductive layer, 254: Insulating layer, 255a: Insulating layer, 255b: Insulating layer, 255c: Insulating layer, 256: Plug, 261: Insulating layer, 262: Insulating layer, 263: Insulating layer, 264: Insulating layer, 265: Insulating layer, 271: Plug, 274a: Conductive layer, 274b: Conductive layer, 274: Plug, 280: Display module, 281: Display part, 282: Circuit part, 283a: Pixel circuit, 283: Pixel circuit part, 284a: Pixel, 284: Pixel part, 285: Terminal part, 286: Wiring part, 290: FPC, 291: Substrate, 292: Substrate, 301A: Substrate, 301B: Substrate, 301: Substrate, 310A: Transistor, 310B: Transistor, 310: Transistor, 311: Conductive layer, 312: Low-resistance region313: Insulating layer, 314: Insulating layer, 315: Element isolation layer, 320A: Transistor, 320B: Transistor, 320: Transistor, 321: Semiconductor layer, 323: Insulating layer, 324: Conductive layer, 325: Conductive layer, 326: Insulating layer, 327: Conductive layer, 328: Insulating layer, 329: Insulating layer, 331: Substrate, 332: Insulating layer, 335: Insulating layer, 336: Insulating layer, 341: Conductive layer, 342: Conductive layer, 343: Plug, 344: Insulating layer, 345: Insulating layer, 346: Insulating layer, 347: Bump, 348: Adhesive layer, 420: Conductor, 430: Insulator, 440: Wiring, 440D: Wiring, 440S: Wiring, 450: Wiring, 460: Insulator, 470i: Region, 470na: Region, 470nb: Region, 470: Oxide semiconductor, 480: Insulator, 490: Opening

Claims

1. A goggle-type electronic device, comprising: a frame; and a housing, wherein the interior of the housing includes a display panel and an optical device, a first surface of the housing includes an electromagnet, a side opposite to the surface of the frame that is worn on the head includes a metal plate, and the metal plate is attracted by the electromagnet to relatively fix the first surface of the housing to the metal plate.

2. The electronic device according to claim 1, wherein the surface of the metal plate has a convex portion, the first surface of the housing has a concave portion, and alignment is performed by fitting the convex portion with the concave portion.

3. The electronic device according to claim 1, wherein one side of the surface of the metal plate has a convex curved surface, and the first surface of the housing has a concave curved surface.

4. The electronic device according to claim 1, wherein the surface of the metal plate and the first surface of the housing have a flat surface.

5. The electronic device according to any one of claims 1 to 4, wherein the housing is connected to an auxiliary device.

6. The electronic device according to claim 5, wherein the auxiliary device is composed of one or more selected from a multi-joint arm, a sliding mechanism, and a balancer.

7. The electronic device according to any one of claims 1 to 4, wherein the display panel includes an organic EL element.

8. The electronic device according to any one of claims 1 to 4, wherein the optical device includes a semi-reflective mirror, a lens, a retardation plate, and a reflective polarizer.

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