Processing method of bypass diode junction box and bypass diode junction box

Abstract

The invention discloses a bypass diode junction box processing method and a bypass diode junction box, and relates to the technical field of photovoltaic modules, and the bypass diode junction box processing method specifically comprises the following steps: S1, a frame is filled with solder, crystal grains and jumper wires; s2, welding in a welding furnace to form a welding part; s3, the welding part is put into a cleaning solution to be cleaned so as to remove impurities; s4, the cleaned welding part is put into a plastic package mold, epoxy resin is adopted for injection molding sealing, then curing is conducted, an integrated wire box is formed, and then curing is conducted; s5, performing surface treatment on the cured integrated wire box, and then performing rib cutting operation; and S6, assembling and testing the integrated wire box after rib cutting, and packaging and warehousing after the integrated wire box is qualified. The invention also discloses a bypass diode junction box manufactured by the processing method. The invention solves the technical problems of high production cost and insufficient heat dissipation performance of the existing junction box.

Description

Technical Field

[0001] The present invention relates to the technical field of photovoltaic modules, in particular to a processing method for a bypass diode junction box and a bypass diode junction box. Background Art

[0002] A bypass diode refers to a diode that is reversely connected in parallel at both ends of a solar silicon cell group in a battery module, which can effectively prevent the silicon cell from being burned out due to the hot spot effect and is an important part of a photovoltaic solar module. The bypass diode is to prevent some of the solar cells from becoming a load due to occlusion under strong light and generating serious heat damage. It is generally used in bypass diodes of monocrystalline silicon and polycrystalline silicon photovoltaic (PV) panels to protect the photovoltaic cells at the overheating points when there are low shunt and high shunt impedances.

[0003] The existing frame structure in the bypass diode is usually the structure with the authorized announcement number of CN213878107U. The upper and lower surfaces of the frame are uneven, which is not conducive to subsequent cooperation with the junction box; moreover, the heat dissipation performance of the frame itself is insufficient, which has a certain impact on the performance of the bypass diode; and at the same time, the existing junction box is usually secondary packaged, and the product quality cannot be well guaranteed. Summary of the Invention

[0004] The purpose of the present invention is to provide a processing method for a bypass diode junction box and a bypass diode junction box, which solves the technical problems of high cost and insufficient heat dissipation performance during the production of the junction box in the prior art.

[0005] The embodiment of the present application discloses a processing method for a bypass diode junction box, including the following steps: S1: Load solder, grains and jumpers on the frame; S2: Put it into a welding furnace for welding to form a welded part; S3: Put the welded part into a cleaning solution for cleaning to remove impurities; S4: Put the cleaned welded part into a plastic sealing mold, inject and seal it with epoxy resin, and then cure it to form an integrated junction box, and then cure it; S5: Perform surface treatment on the cured integrated junction box, and then perform a de-gating operation; S6: Assemble and test the integrated junction box after de-gating. After passing the test, package it and store it in the warehouse.

[0006] The present application improves the processing method for the bypass diode junction box. By adopting the form of direct encapsulation with epoxy resin, the heat dissipation performance of the product can be better improved.

[0007] On the basis of the above technical solution, the embodiment of the present application can also be improved as follows: Further, the framework in step S1 is an integrally formed part, and its specific structure includes: Two metal sheets, the metal sheets are arranged at intervals, and the opposite ends of the two metal sheets are L-shaped. The upper surfaces of the two metal sheets are in the same plane, and the lower surfaces of the two metal sheets are in the same plane; Connecting ribs, which are respectively arranged between the two metal sheets; Two heat dissipation strips, which are respectively arranged at the opposite ends of the metal sheets. The beneficial effect of this step is that by designing the framework, it is convenient to improve the heat dissipation performance of the product during subsequent processing.

[0008] Further, when loading the grains into the framework in step S1, the grains are placed on the end face of the L-shaped end of any one of the metal sheets. The beneficial effect of this step is that it can increase the heat dissipation area and avoid heat accumulation.

[0009] Further, the cleaning liquid in step S3 is a n-propyl bromide solution.

[0010] Further, the specific content of step S3 is as follows: S301: Soak in n-propyl bromide at 40 - 50 °C for 1 - 5 minutes; S302: Then perform a rinsing process in a n-propyl bromide solution at a temperature of 5 - 15 °C for 1 - 2 minutes; S303: Place it above a n-propyl bromide solution at 60 - 75 °C. The n-propyl bromide gas volatilized by metal condensation, and the condensed liquid takes away the surface impurities, for 1 - 2 minutes; S304: Bake at a temperature of 65 - 85 °C until dry. The beneficial effect of this step is that through the corresponding cleaning steps, the cleanliness of the product can be guaranteed, which is convenient for subsequent processing.

[0011] Further, step S4 includes the following content: S401: Take out the epoxy resin cake and warm it at a temperature of 18 - 25 °C for more than 12 hours; S402: Preheat the epoxy resin cake to 70 - 90 °C; S403: Preheat the framework in step S3 to a temperature of 100 - 150 °C, and then put it into a plastic encapsulation mold; S404: Heat the plastic encapsulation mold to 150 - 190 °C, and then inject epoxy resin. After the cross-linking reaction of the epoxy resin is completed, an integrated wire box is formed; S405: Cure the integrated wire box at a temperature of 150 - 180 °C for 4 - 12 hours. The beneficial effect of this step is that it is convenient for subsequent plastic encapsulation of the epoxy resin.

[0012] Further, the step S5 includes the following contents: S501: Perform degreasing on the solidified integrated wire box with a sodium hydroxide solution for 1 - 10 minutes; S502: Use a water jet machine to remove the residual glue around the integrated wire box; S503: Perform deoxidation treatment on the integrated wire box with deoxidizing powder for 2 - 20 seconds; S504: Activate the integrated wire box for 2 - 20 seconds; S505: Perform electroplating tin operation on the integrated wire box, then passivate it, and finally bake it; S506: Perform a dicing operation on the integrated wire box to form a wire box with diode characteristics. The beneficial effect of this step is that the product quality can be better guaranteed through surface treatment.

[0013] Further, the specific content of the step S6 is as follows: S601: Perform electrical performance testing on the integrated wire box, and then classify it into left, middle, and right categories after completion; S602: Process the integrated wire boxes located on the left side: Place the photovoltaic extension connecting wire on the bus bar welding area of the integrated wire box and complete the connection. Then install a tail card at one opening position of the integrated wire box to fix the extension wire, seal the bus bar welding area, install a tail card at the other opening position, and seal the bus bar welding area; Process the integrated wire boxes located in the middle: Install tail cards at both opening positions of the integrated wire box to seal the bus bar welding area; Process the integrated wire boxes located on the right side: Place the photovoltaic extension connecting wire on the return bus bar welding area of the integrated wire box and complete the connection. Then install a tail card at one opening position of the integrated wire box to fix the extension wire, seal the bus bar welding area, install a tail card at the other opening position, and seal the bus bar welding area.

[0014] S603: Print characters on the integrated wire box, then test and inspect it. After passing the inspection, package it and store it in the warehouse.

[0015] This application also discloses a bypass diode junction box, which is made by using the processing method of the foregoing bypass diode junction box, and includes: A frame assembly; A box body that wraps the frame assembly, and a hollow area is provided on the box body; The frame assembly includes: Two metal sheets, the metal sheets are arranged at intervals, and the opposite ends of the two metal sheets are L-shaped; A crystal grain, installed at the L-shaped end of one of the metal sheets; A jumper wire, one end is installed on the crystal grain, and the other end is installed on the L-shaped end of the remaining metal sheet.

[0016] Wherein, the box body is an epoxy resin box body.

[0017] One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages: 1. The processing method of the bypass diode junction box in the present application is designed, and the epoxy resin is directly used to encapsulate the frame assembly, so as to achieve direct contact, thereby improving the heat dissipation performance of the product.

[0018] 2. The frame assembly in the present application is designed. Through the flatness design, it is convenient to ensure the electrical performance of the frame assembly, thereby improving the quality of the product.

[0019] 3. The metal sheet in the present application is designed, and the end part is designed to be L-shaped, which is convenient for the subsequent assembly of larger-sized crystal grains, thereby improving the heat dissipation performance.

[0020] 4. The box body in the present application is designed, and the epoxy resin is used for encapsulation, which can reduce the height and volume of the product and reduce the cost. Description of the Drawings

[0021] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the specific embodiments or the prior art. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0022] Figure 1 It is a schematic flow chart of a processing method of a bypass diode junction box according to a specific embodiment of the present invention; Figure 2 It is a schematic diagram of the frame in step S1 of a processing method of a bypass diode junction box according to a specific embodiment of the present invention; Figure 3 It is a schematic structural diagram of a bypass diode junction box according to a specific embodiment of the present invention; Reference Signs: 1 - Frame; 2 - Crystal Grain; 3 - Frame Assembly; 4 - Box Body; 5 - Hollow Area; 6 - Jumper Wire; 101 - Metal Sheet; 102 - Connecting Rib; 103 - Heat Dissipation Strip. Detailed Embodiments

[0023] The embodiments of the technical solution of the present invention will be described in detail below with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, so they are only examples and cannot be used to limit the protection scope of the present invention. It should be noted that unless otherwise specified, the technical terms or scientific terms used in this application should have the ordinary meaning understood by those skilled in the art to which the present invention belongs.

[0024] In this application, unless otherwise clearly specified and limited, terms such as "installation", "connection", "connection", "fixation" and other terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0025] In order to better understand the above technical solution, the above technical solution will be described in detail below with reference to the accompanying drawings of the specification and specific implementation manners.

[0026] Embodiment: As Figures 1 - 3 shown, the embodiment of the present application discloses a processing method for a bypass diode junction box. Compared with the existing processing method, the form of using epoxy resin to wrap the frame assembly can reduce the overall thickness. At the same time, the frame assembly is in direct contact with the epoxy resin. Under the same size conditions, the size of the frame assembly can be increased, thereby increasing the heat dissipation area and further improving the heat dissipation effect.

[0027] The processing method in this embodiment specifically includes the following steps: S1: Load solder, chips and jumpers on the frame; the specific content of this step is as follows: S101: Place solder (lower solder) at the chip welding position on the frame, position A; among them, high-temperature solder is selected for the solder, and the solid-phase to liquid-phase temperature is greater than 290 °C (typically using a lead-tin-silver composition ratio of 92.5% 5% 2.5%); S102: Place the chip above the solder position A to complete the fixation of the chip position; S103: Place solder above the chip, position B (the composition is the same as the lower solder); S104: Place solder at another position C on the frame; S105: Place the copper jumper above position B and position C to complete the electrical characteristic connection; S2: Place it in a soldering furnace for soldering to form a soldered part. The specific content of this step is as follows: Place the frame that has completed electrical connection in the soldering furnace and complete soldering through high temperature. The soldering curve refers to the furnace temperature curve (lead-tin-silver composition ratio 92.5% 5% 2.5%). S3: Place the soldered part in a cleaning solution for cleaning to remove impurities. The cleaning agent is a n-propyl bromide solvent-based cleaning agent. The specific content of this step is as follows: S301: Immerse it in n-propyl bromide at 40°C for 1 minute. S302: Then perform a rinsing treatment in a n-propyl bromide solution at a temperature of 5°C for 1 minute. S303: Place it above the n-propyl bromide solution at 60°C. The n-propyl bromide gas condensed by the metal takes away the impurities on the surface with the condensed liquid, for 1 minute. S304: Bake it at a temperature of 65°C until it is dried. S4: Place the cleaned soldered part into a plastic encapsulation mold, inject and seal it with epoxy resin, and then cure it to form an integrated wire box, and then cure it. The specific content of this step is as follows: S401: Take out the epoxy resin cake and warm it at a temperature of 18°C for more than 12 hours. S402: Preheat the epoxy resin cake to 70°C. S403: Preheat the frame in step S3 to a temperature of 100°C, and then place it in the plastic encapsulation mold. S404: Heat the plastic encapsulation mold to 150°C, then inject epoxy resin. After the cross-linking reaction of the epoxy resin is completed, an integrated wire box is formed. S405: Cure the integrated wire box at a temperature of 150°C for 12 hours. S5: Perform surface treatment on the cured integrated wire box, and then perform a trimming operation. The specific content of this step is as follows: S501: Use a sodium hydroxide solution (concentration 10 g / L) to degrease the cured integrated wire box for 1 minute. S502: Use a water jet machine (pressure 20 Mpa) to remove the residual glue around the integrated wire box. S503: Use deoxidizing powder (concentration 10 g / L) to deoxidize the integrated wire box for 2 seconds. S504: Activate the integrated wire box with methanesulfonic acid (concentration 1 g / L) for 2 seconds. S504: Perform electroplating tin operation on the integrated wire box. The materials are methylsulfonic acid, stannous methylsulfonate, bath conditioner, and brightener. The temperature is 10°C and the time is 20 minutes. Then perform passivation using a post-tin treatment agent (concentration 10 g / L) for 2 seconds. Finally, perform baking at a temperature of 150°C for 1 hour. S505: Perform trimming operation on the integrated wire box to form a wire box with diode characteristics. S6: Assemble and test the integrated wire box after trimming (with connecting bars). After passing the test, package it and store it in the warehouse. The specific content of this step is as follows: S601: Perform electrical performance testing on the integrated wire box. After completion, classify it into left, middle, and right categories, which is convenient for subsequent assembly because the integrated wire box assembly is assembled from multiple integrated wire boxes. S602: Process the integrated wire box located on the left: Place the photovoltaic extension connection wire on the busbar welding area of the integrated wire box and complete the connection. Then install the tail card at one opening position of the integrated wire box to fix the extension wire and seal the busbar welding area. Install the tail card at the other opening position and seal the busbar welding area. Process the integrated wire box located in the middle: Install tail cards at both opening positions of the integrated wire box to seal the busbar welding area. Process the integrated wire box located on the right: Place the photovoltaic extension connection wire on the return busbar welding area of the integrated wire box and complete the connection. Then install the tail card at one opening position of the integrated wire box to fix the extension wire and seal the busbar welding area. Install the tail card at the other opening position and seal the busbar welding area.

[0028] S603: Print words on the integrated wire box, then test and inspect. After passing the test, package it and store it in the warehouse.

[0029] For further explanation of the embodiments of this application: The frame 1 in step S1 of this application is an integrally formed part, and its specific structure includes: Two metal sheets 101, the metal sheets 101 are arranged at intervals, and the opposite ends of the two metal sheets 101 are L-shaped. The upper surfaces of the two metal sheets 101 are on the same plane, and the lower surfaces of the two metal sheets 101 are on the same plane. Connecting bars 102, which are respectively arranged between the two metal sheets 101. Two heat dissipation strips 103, which are respectively arranged at the opposite ends of the metal sheets 101.

[0030] Among them, when loading the crystal grains 2 into the frame 1 in the step S1, the crystal grains 2 are placed on the end surface of the L-shaped end of any one of the metal sheets 101.

[0031] The embodiment of the present application also discloses a bypass diode junction box, which is made by using the aforementioned processing method, and its specific structure includes: A frame assembly 3; A box body 4, which wraps the frame assembly 3, and a hollow area 5 is provided on the box body 4; The frame assembly 3 includes: Two metal sheets 101, the metal sheets 101 are arranged at intervals, and the opposite ends of the two metal sheets are L-shaped; A crystal grain 2, which is installed at the L-shaped end of one of the metal sheets 101; A jumper wire 6, one end of which is installed on the crystal grain 2, and the other end is installed on the L-shaped end of the remaining metal sheet 101.

[0032] Among them, the box body 4 is an epoxy resin box body.

[0033] Further explanation for the present application: The improvement points of the present application are mainly divided into two parts. One part is the frame assembly, and the other part is the box body.

[0034] Regarding the frame assembly part: The metal sheet 101 in the present application is of an integrated design, and the upper and lower surfaces of the metal sheet 101 are on the same plane, which can improve the flatness, reduce the shear force generated after combining multiple frames, avoid material electrical problems, and thus ensure the product quality; moreover, the high flatness is also convenient for production operations and integrated installation, which is conducive to ensuring the efficient production of products.

[0035] During the process of crystal grain assembly, the end of the metal sheet 101 in the present application is L-shaped, which is beneficial to improving the heat dissipation performance; the box body in the present application is integrally formed and encapsulated, canceling the space occupied by the secondary installation and positioning of the traditional diode inside the wire box, which can increase the area of the metal sheet, that is, the area of the copper sheet, and correspondingly, the size of the crystal grain also becomes larger. For example, the crystal grain welding size can be enlarged to 230 mil * 2 pieces, which is 28% larger than the traditional 180 mil; moreover, when placing, the present application can adopt a staggered design. Compared with the traditional side-by-side method, the heat dissipation channel is wider, effectively improving the overcurrent capacity of the product.

[0036] The metal sheet 101 in the present application is also provided with heat dissipation strips 103 for heat dissipation on both sides. The ends of the heat dissipation sections correspond to the ends of another metal sheet, so as to increase the length of the heat dissipation sections and ensure the uniformity of heat. At the same time, in the subsequent part of the present application, the metal sheet is directly structured with epoxy resin, reducing the heat conduction path and improving the uniformity and efficiency of heat dissipation.

[0037] Regarding the box body part: The box body in the present application is integrally encapsulated, which can improve the quality and efficiency, shorten the production process, reduce the processing risks caused during the processing and installation of the diode in the on-line box, and at the same time, the overall airtightness of the integrally encapsulated material is relatively good; The present application is provided with a hollowed-out area to provide a wide heat dissipation channel and enhance the heat capacity of the material. At the same time, the present application uses epoxy resin encapsulation, and the thermal conductivity is higher than that of traditional PPE, nylon, and PS, thereby improving the heat dissipation effect.

[0038] The present application designs the size of the box body to reduce the thickness. Specifically, the thickness is reduced from 13 - 18 mm to 6 mm, which can reduce the volume, achieve lightweight, reduce the overall material consumption, and moreover, the integrally encapsulated structure can also avoid the risks during secondary encapsulation.

[0039] Embodiment 2: Based on Embodiment 1, the following improvements are made in this embodiment: Step S3: Put the welded part into a cleaning solution for cleaning to remove impurities; the cleaning agent is a n-propyl bromide solvent-based cleaning agent, and the specific content of this step is as follows: S301: Immerse in n-propyl bromide at 50 °C for 5 minutes; S302: Then perform a rinsing treatment in a n-propyl bromide solution at a temperature of 15 °C for 2 minutes; S303: Place it above a n-propyl bromide solution at 75 °C. The n-propyl bromide gas volatilized by metal condensation, and the condensed liquid carries away the surface impurities for 2 minutes; S304: Bake at a temperature of 85 °C until dry; Step S4: Put the cleaned welded part into a plastic sealing mold, inject and seal it with epoxy resin, and then cure it to form an integrated on-line box, and then cure it; the specific content of this step is as follows: S401: Take out the epoxy resin cake and warm it at a temperature of 25 °C for more than 12 hours; S402: Preheat the epoxy resin cake to 90 °C; S403: Preheat the frame in Step S3 to a temperature of 150 °C, and then put it into a plastic sealing mold; S404: Heat the plastic encapsulation mold to 190 °C, then inject epoxy resin. After the cross-linking reaction of the epoxy resin is completed, an integrated wire box is formed; S405: Cure the integrated wire box at a temperature of 180 °C for 4 hours; Step S5: Perform surface treatment on the cured integrated wire box, and then perform a de-gating operation; the specific content of this step is as follows: S501: Use a sodium hydroxide solution (concentration 80 g / L) to degrease the cured integrated wire box for 10 minutes; S502: Use a water jet machine (pressure 20 Mpa) to remove the residual glue around the integrated wire box; S503: Use deoxidizing powder (concentration 50 g / L) to deoxidize the integrated wire box for 20 seconds; S504: Activate the integrated wire box with methanesulfonic acid (concentration 10 g / L) for 20 seconds; S504: Perform electroplating tin operation on the integrated wire box. The materials are methanesulfonic acid, stannous methanesulfonate, bath starter, and brightener, at a temperature of 20 °C for 40 minutes; then perform passivation with a post-tin treatment agent (concentration 50 g / L) for 20 seconds; finally, perform baking at a temperature of 150 °C for 1 hour; S505: Perform a de-gating operation on the integrated wire box to form a wire box with diode characteristics; This embodiment also discloses a bypass diode junction box formed by processing based on this embodiment.

[0040] Embodiment 3: Based on Embodiment 1, the following improvements are made in this embodiment: Step S3: Place the welded part in a cleaning solution for cleaning to remove impurities; the cleaning agent is a n-propyl bromide solvent-based cleaning agent. The specific content of this step is as follows: S301: Immerse in n-propyl bromide at 45 °C for 3 minutes; S302: Then perform a rinsing treatment in a n-propyl bromide solution at a temperature of 10 °C for 1 minute; S303: Place it above a n-propyl bromide solution at 70 °C. The n-propyl bromide gas condensed by the metal volatilizes, and the condensed liquid takes away the surface impurities for 1 minute; S304: Bake at a temperature of 75 °C until dry; S4: Place the cleaned welded part into a plastic encapsulation mold, inject and seal it with epoxy resin, and then cure it to form an integrated wire box, and then cure it; the specific content of this step is as follows: S401: Take out the epoxy resin cake and warm it at 20 °C for more than 12 hours; S402: Preheat the epoxy resin cake to 80 °C; S403: Preheat the frame in step S3 to 120 °C, and then place it in the plastic encapsulation mold; S404: Heat the plastic encapsulation mold to 170 °C, and then inject epoxy resin. After the cross-linking reaction of the epoxy resin is completed, an integrated wire box is formed; S405: Cure the integrated wire box at 160 °C for 8 hours; S5: Perform surface treatment on the cured integrated wire box, and then perform the operation of cutting the leads; The specific content of this step is as follows: S501: Use sodium hydroxide solution (concentration 50 g / L) to degrease the cured integrated wire box for 6 minutes; S502: Use a water jet machine (pressure 20 Mpa) to remove the residual glue around the integrated wire box; S503: Use deoxidizing powder (concentration 30 g / L) to perform deoxidation treatment on the integrated wire box for 10 seconds; S504: Activate the integrated wire box with methanesulfonic acid (concentration 5 g / L) for 10 seconds; S504: Perform electroplating tin operation on the integrated wire box. The materials are methanesulfonic acid, stannous methanesulfonate, bath conditioner, and brightener, at a temperature of 15 °C for 30 minutes; then perform passivation with a tin post-treatment agent (concentration 30 g / L) for 10 seconds; finally, perform baking at a temperature of 150 °C for 1 hour; S505: Perform the operation of cutting the leads on the integrated wire box to form a wire box with diode characteristics; This embodiment also discloses a bypass diode junction box formed based on the processing of this embodiment.

[0041] Regarding the products of Embodiments 1-3 of this application and the existing wire boxes, it is found that when testing the ability of the products of this application to have a temperature rise during power-on, the temperature drops by 10 °C under the same current, and the over-current capacity per unit area of the crystal grains is effectively improved.

[0042] Attached test data: Execute according to the reference IEC61215 MQT18 test standard. Select crystal grains of the same size and 2 crystal grain suppliers for test comparison:

[0043] In the description of the present invention, a large number of specific details are set forth. However, it is understood that embodiments of the present invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail so as not to obscure the understanding of this description. In the description of this specification, the descriptions referring to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, without contradiction, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0044] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention, and they should all be covered by the scope of the claims and the description of the present invention.

Claims

1. A processing method for a bypass diode junction box, characterized in that, It includes the following steps: S1: Load solder, grains and jumpers on the frame; S2: Place it in a soldering furnace for soldering to form a soldered part; S3: Place the soldered part in a cleaning solution for cleaning to remove impurities; S4: Place the cleaned soldered part into a plastic encapsulation mold, inject and seal it with epoxy resin, and then cure it to form an integrated wire box, and then cure it; S5: Perform surface treatment on the cured integrated wire box, and then perform a debarring operation; S6: Assemble and test the integrated wire box after debarring. After passing the test, package it and store it in the warehouse.

2. The processing method according to claim 1, wherein The frame in step S1 is an integrally formed part, and its specific structure includes: Two metal sheets, the metal sheets are arranged at intervals, and the opposite ends of the two metal sheets are L-shaped. The upper surfaces of the two metal sheets are in the same plane, and the lower surfaces of the two metal sheets are in the same plane; Connecting ribs, which are respectively arranged between the two metal sheets; Two heat dissipation strips, which are respectively arranged at the opposite ends of the metal sheets.

3. The processing method according to claim 2, characterized in that, When loading grains in the frame in step S1, place the grains on the end face of the L-shaped end of any one of the metal sheets.

4. The processing method according to claim 1, characterized in that, The cleaning solution in step S3 is a normal propyl bromide solution.

5. The processing method according to claim 4, characterized in that, The specific content of step S3 is as follows: S301: Soak in normal propyl bromide at 40 - 50 °C for 1 - 5 minutes; S302: Then perform a rinsing treatment in a normal propyl bromide solution at a temperature of 5 - 15 °C for 1 - 2 minutes; S303: Place it above a normal propyl bromide solution at 60 - 75 °C. The normal propyl bromide gas volatilized by metal condensation, and the condensed liquid takes away the surface impurities for 1 - 2 minutes; S304: Bake at a temperature of 65 - 85 °C until dry.

6. The processing method according to claim 1, characterized in that Step S4 includes the following content: S401: Take out the epoxy resin cake and warm it at a temperature of 18 - 25 °C for more than 12 hours; S402: Preheat the epoxy resin cake to 70 - 90 °C; S403: Preheat the frame in step S3 to a temperature of 100 - 150 °C, and then put it into a plastic encapsulation mold; S404: Heat the plastic encapsulation mold to 150 - 190 °C, then inject epoxy resin. After the cross-linking reaction of the epoxy resin is completed, an integrated wire box is formed; S405: Cure the integrated wire box at a temperature of 150 - 180 °C for 4 - 12 hours.

7. The processing method according to claim 6, wherein, Step S5 includes the following content: S501: Use a sodium hydroxide solution to degrease the cured integrated wire box for 1 - 10 minutes; S502: Use a water jet machine to remove the residual glue around the integrated wire box; S503: Use deoxidizing powder to perform deoxidation treatment on the integrated wire box for 2 - 20 seconds; S504: Activate the integrated wire box for 2 - 20 seconds; S505: Perform electroplating tin operation on the integrated wire box, then passivate it, and finally bake it; S506: Perform a debarring operation on the integrated wire box to form a wire box with diode characteristics.

8. The processing method according to claim 7, characterized in that, The specific content of step S6 is as follows: S601: Conduct electrical performance tests on the integrated wire box, and after completion, classify them into left, middle, and right categories; S602: Process the integrated wire boxes located on the left: Place the photovoltaic extension connection wire in the busbar welding area of the integrated wire box and complete the connection. Then, install the tail card at the opening position on one side of the integrated wire box to fix the extension wire, seal the busbar welding area, install the tail card at the opening position on the other side, and seal the busbar welding area; Process the integrated wire boxes located in the middle: Install tail cards at the opening positions on both sides of the integrated wire box to seal the busbar welding area; Process the integrated wire boxes located on the right: Place the photovoltaic extension connection wire in the return busbar welding area of the integrated wire box and complete the connection. Then, install the tail card at the opening position on one side of the integrated wire box to fix the extension wire, seal the busbar welding area, install the tail card at the opening position on the other side, and seal the busbar welding area. S603: Print words on the integrated wire box, then conduct tests and inspections. After passing, package and store in the warehouse.

9. A bypass diode junction box, characterized in that, Manufactured by using the processing method of the bypass diode junction box according to any one of claims 1-8, including: A frame assembly; A box body that wraps the frame assembly, and a hollow area is provided on the box body; The frame assembly includes: Two metal sheets, the metal sheets are arranged at intervals, and the opposite ends of the two metal sheets are L-shaped; A crystal grain, installed at the L-shaped end of one of the metal sheets; A jumper wire, one end is installed on the crystal grain, and the other end is installed on the L-shaped end of the remaining metal sheet.

10. The bypass diode junction box according to claim 9, characterized in that, The box body is an epoxy resin box body.

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