Asymmetric switch applied to satellite-borne wireless communication system

Abstract

The invention belongs to the technical field of integrated circuits, and particularly relates to an asymmetric switch applied to a satellite-borne wireless communication system. The circuit structure of the switch comprises an anti-radiation switch core circuit, a power detection circuit, an analog-to-digital converter and a control module circuit, an input signal is input to the anti-radiation switch core circuit, and an output signal is generated and output to the power detection circuit. The power detection circuit processes the received signal, outputs a processing result to the analog-to-digital converter, receives an instruction of the control module circuit and generates an output signal of the whole circuit; the analog-to-digital converter converts a processing result output by the power detection circuit into a digital signal and outputs the digital signal to the control module circuit; the control module circuit performs judgment according to the input digital signal, generates a control signal for controlling the working mode of the anti-radiation switch core circuit, and generates a control signal for controlling the power detection circuit and the analog-to-digital converter; the radiation-proof switch core circuit is composed of two paths of identical series-parallel asymmetric switches and three numerical control single-pole double-throw switches. Switching of the two switching circuits is controlled by a numerical control single-pole double-throw switch, and by means of the structure, the circuit failure probability caused by space irradiation can be remarkably reduced, and the anti-irradiation performance and stability of the circuit are improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of integrated circuits, and particularly relates to a radio frequency front-end switch. Background Art

[0002] A radio frequency front-end switch is an important component in the front end of a phased array transceiver system, mainly responsible for switching and isolation between the transmit mode and the receive mode, ensuring normal operation and non-interference between different links, especially in a single-antenna multi-channel radio frequency transceiver circuit with multiple modes and multiple frequencies. The radio frequency switch can not only provide multi-channel gating, but also facilitate on-chip integration of the radio frequency module and the baseband module, so it is widely used in wireless application scenarios such as base station radio frequency chips.

[0003] With the increasing requirements of mobile communication technology for data transmission rate, the operating frequency of radio frequency chips has also increased accordingly, posing higher requirements for the performance of radio frequency switches. It is necessary to make a necessary trade-off among indicators such as insertion loss, isolation, power handling capacity, linearity, and chip size, making the design of high-performance radio frequency switches more challenging.

[0004] Different architectures and implementation methods of radio frequency front-end switches have their own advantages and disadvantages. Among them, the series-parallel asymmetric architecture can significantly improve the isolation performance between ports, better balance the trade-off between isolation performance and insertion loss, and can design each path separately, saving layout area, and having advantages in many application scenarios.

[0005] Currently, the increasingly widespread communication application fields have put forward more requirements for phased array transceiver systems and front-end switch circuits. In the aerospace field, the working environment of spaceborne chips is the space with strong radiation. The circuit modules in the chips are affected by radiation, having a higher failure probability and a shorter expected life. Therefore, it is imperative to pay attention to the special working environment of spaceborne chips in the aerospace field, study chip anti-radiation technology, and improve the stability and reliability of the system. Summary of the Invention

[0006] The purpose of the present invention is to propose an anti-radiation series-parallel asymmetric switch applied to spaceborne communication chips.

[0007] The radio frequency front-end switch proposed by the present invention has a circuit structure including: an anti-radiation switch core circuit, a power detection circuit, an analog-to-digital converter, and a control module circuit; an input signal is input to the anti-radiation switch core circuit, and an output signal is generated and output to the power detection circuit; the power detection circuit processes the received signal, outputs the processing result to the analog-to-digital converter, and receives instructions from the control module circuit to generate the output signal of the overall circuit; the analog-to-digital converter converts the processing result output by the power detection circuit into a digital signal and outputs it to the control module circuit; the control module circuit makes a judgment based on the input digital signal, generates a control signal for controlling the working mode of the anti-radiation switch core circuit, and generates control signals for controlling the power detection circuit and the analog-to-digital converter.

[0008] In the present invention, the anti-radiation switch core circuit is composed of two series-parallel asymmetric switches and three numerically controlled single-pole double-throw switches; the two switch circuit structures are exactly the same, and both adopt the basic series-parallel asymmetric switch architecture.

[0009] The radio frequency front-end switch designed by the present invention generally has two series-parallel asymmetric switch circuits that are backup to each other. The two switches are backup to each other and can be switched by changing the connection state of the single-pole double-throw switch under the control of the system, thereby effectively reducing the failure probability of the overall circuit and improving the anti-radiation performance and stability of the system. Brief Description of the Drawings

[0010] Figure 1 It is a schematic diagram of the anti-radiation series-parallel asymmetric switch structure of the present invention.

[0011] Figure 2 It is a schematic diagram of the anti-radiation switch core circuit. Detailed Embodiments

[0012] The present invention will be described in more detail below with reference to the drawings. In each drawing, the same elements are denoted by similar reference numerals. For clarity, the various parts in the drawings are not drawn to scale. In addition, some well-known parts may not be shown in the figures.

[0013] Many specific details of the present invention are described below, such as the structure, materials, dimensions, processing techniques, and technologies of the devices, in order to understand the present invention more clearly. However, as those skilled in the art can understand, the present invention can be implemented without these specific details.

[0014] Figure 1 It shows a schematic diagram of the structure of the spaceborne anti-radiation asymmetric switch of the present invention.

[0015] Such as Figure 1As shown in the figure, the spaceborne radiation-hardened asymmetric switch 100 in the present invention includes a radiation-hardened switch core circuit 101, a power detection circuit 102, a control module 103, and an analog-to-digital converter 104. The power supply voltage VDD is connected to the radiation-hardened switch core circuit 101, and the input signal V in is input to the radiation-hardened switch core circuit 101. The radiation-hardened switch core circuit 101 outputs V op ’ and V on ’ which are transmitted to the power detection circuit 102. The outputs V op and V on of the power detection circuit 102 are used as the output signals of the entire asymmetric switch circuit. The output pdout of the power detection circuit 102 is transmitted to the analog-to-digital converter 104, the output adout of the analog-to-digital converter 104 is transmitted to the control module 103, the control module 103 outputs Ctrl<1:3> which is transmitted to the radiation-hardened switch core circuit 101, the control module 103 outputs Ctrl4 which is transmitted to the power detection circuit 102, and the control module 103 outputs Ctrl5 which is transmitted to the analog-to-digital converter 104.

[0016] Figure 2 The figure shows the schematic diagram of the radiation-hardened asymmetric switch core circuit in the present invention.

[0017] As Figure 2 shown, the radiation-hardened switch core circuit includes a total of 3 single-pole double-throw switches S1 - 3, 6 transistors M1 - M6, and 8 resistors; the input signal V in is connected to the moving end of switch S2; the fixed end 2.1 of switch S2 is connected to the first branch of the series-parallel asymmetric switch through connection node X. Node X is grounded through resistor R1 and is connected to the drain terminals of transistors M1 and M2; the gate terminals of transistors M1 and M2 are respectively connected to the bias voltage V c2 through resistors. The source terminal of transistor M2 is grounded, and the source terminal of transistor M1 is connected to the drain terminal of transistor M3; the gate terminal of transistor M3 is connected to the bias voltage V c1 through a resistor, and the source terminal is grounded; the drain terminal of transistor M3 is connected to the fixed end 1.1 of switch S1, and the drain terminal of transistor M2 is connected to the fixed end 3.1 of switch S3; the fixed end 2.2 of switch S2 is connected to the second branch of the series-parallel asymmetric switch through connection node Y. Node Y is grounded through resistor R2 and is connected to the drain terminals of transistors M4 and M5; the gate terminals of transistors M4 and M5 are respectively connected to the bias voltage V c2 through resistors. The source terminal of transistor M5 is grounded, and the source terminal of transistor M4 is connected to the drain terminal of transistor M6; the gate terminal of transistor M6 is connected to the bias voltage V c1 through a resistor, and the source terminal is grounded; the drain terminal of transistor M6 is connected to the fixed end 1.2 of switch S1, and the drain terminal of transistor M5 is connected to the fixed end 3.2 of switch S3; the moving end of switch S3 outputs the signal V op’, the moving end of switch S1 outputs signal V on ’; the switching of switch S1-3 is controlled by the control signal output by the control module, so as to flexibly switch the actual working switch circuit, thereby improving the circuit reliability and enhancing the anti-radiation performance and stability of the system.

Claims

1. An asymmetric switch applied to a spaceborne communication chip, characterized in that, The circuit structure includes: an anti-radiation switch core circuit, a power detection circuit, an analog-to-digital converter, and a control module circuit; an input signal is input to the anti-radiation switch core circuit, and an output signal is generated and output to the power detection circuit; the power detection circuit processes the signal it receives, outputs the processing result to the analog-to-digital converter, and receives an instruction from the control module circuit to generate an output signal of the overall circuit; the analog-to-digital converter converts the processing result output by the power detection circuit into a digital signal and outputs it to the control module circuit; the control module circuit makes a judgment based on the input digital signal, generates a control signal for controlling the working mode of the anti-radiation switch core circuit, and generates control signals for controlling the power detection circuit and the analog-to-digital converter.

2. The anti-irradiation switch applied to the spaceborne communication chip according to claim 1, wherein The anti-radiation switch core circuit is composed of two series-parallel asymmetric switches and three numerically controlled single-pole double-throw switches; the two switch circuit structures are exactly the same, both using the basic series-parallel asymmetric switch architecture; the two switch circuits are backup to each other and can be switched by changing the connection state of the single-pole double-throw switch under the control of the system, thereby effectively reducing the failure probability of the overall circuit and improving the anti-radiation performance and stability of the system.

3. The anti-radiation switch applied to the spaceborne communication chip according to claim 2, wherein The anti-radiation switch core circuit includes a total of 3 single-pole double-throw switches S1-3, 6 transistors M1-M6, and 8 resistors; the input signal V in is connected to the moving end of switch S2; the fixed end 2.1 of switch S2 accesses the first branch of the series-parallel asymmetric switch through connection node X. Node X is grounded through resistor R1 and is connected to the drain terminals of transistors M1 and M2; the gate terminals of transistors M1 and M2 are respectively connected to the bias voltage V c2 through resistors. The source terminal of transistor M2 is grounded, and the source terminal of transistor M1 is connected to the drain terminal of transistor M3; the gate terminal of transistor M3 is connected to the bias voltage V c1 through a resistor, and the source terminal is grounded; the drain terminal of transistor M3 is connected to the fixed end 1.1 of switch S1, and the drain terminal of transistor M2 is connected to the fixed end 3.1 of switch S3; the fixed end 2.2 of switch S2 accesses the second branch of the series-parallel asymmetric switch through connection node Y. Node Y is grounded through resistor R2 and is connected to the drain terminals of transistors M4 and M5; the gate terminals of transistors M4 and M5 are respectively connected to the bias voltage V c2 through resistors. The source terminal of transistor M5 is grounded, and the source terminal of transistor M4 is connected to the drain terminal of transistor M6; the gate terminal of transistor M6 is connected to the bias voltage V c1 through a resistor, and the source terminal is grounded; the drain terminal of transistor M6 is connected to the fixed end 1.2 of switch S1, and the drain terminal of transistor M5 is connected to the fixed end 3.2 of switch S3; the moving end of switch S3 outputs the signal V op ’, and the moving end of switch S1 outputs the signal V on ’; the switching of switches S1-3 is controlled by the control signal output by the control module, so as to flexibly switch the actual working switch circuit, thereby improving the circuit reliability and enhancing the anti-radiation performance and stability of the system.

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