Display panel and display device

Abstract

The embodiment of the invention discloses a display panel and a display device. The display panel comprises a substrate base plate; the first transistor and the second transistor are formed on the substrate, the first transistor comprises a first active layer, a first grid electrode, a first source electrode and a first drain electrode, and the first active layer comprises silicon; the second transistor comprises a second active layer, a second grid electrode, a second source electrode and a second drain electrode, and the second active layer comprises an oxide semiconductor; the second active layer is located on the side, away from the substrate, of the first active layer; the first insulating layer is located on the side, away from the substrate, of the second active layer and located between the second grid electrode and the second active layer, and the second insulating layer is located on the side, facing the substrate, of the second active layer; wherein the concentration of the oxygen element in the first insulating layer is smaller than the concentration of the oxygen element in the second insulating layer. The effects of improving the stability of the second transistor and ensuring good performance of the driving circuit are achieved.

Description

[0001] This application is a divisional application of the application with the application number 202011615429.3, the application date of December 30, 2020, and the invention title of "A display panel and a display device". Technical Field

[0002] Embodiments of the present invention relate to the field of display technologies, and in particular, to a display panel and a display device. Background Art

[0003] Organic Light-Emitting Diode (OLED) display panels are widely loved because they have the advantages of self-luminescence, high contrast ratio, thin thickness, fast response speed, and can be used for flexible panels.

[0004] The OLED elements of OLED display panels are current-driven elements, and corresponding pixel circuits and driving circuits need to be set. The driving circuit provides driving signals for the pixel circuits so that the pixel circuits provide driving current for the OLED elements to drive the OLED elements to emit light. Transistors are provided in both the driving circuit and the pixel circuit of the OLED display panel. Indium gallium zinc oxide (IGZO) is often used as the active layer of the transistor to reduce the leakage current in the transistor. However, in the prior art, the stability of IGZO transistors is poor, which affects the performance of the driving circuit and / or the pixel circuit, and further affects the display effect of the display panel. Summary of the Invention

[0005] Embodiments of the present invention provide a display panel and a display device to achieve the effect of improving the stability of the second transistor and ensuring good performance of the driving circuit.

[0006] In a first aspect, embodiments of the present invention provide a display panel, which includes

[0007] A substrate;

[0008] A first transistor and a second transistor, the first transistor and the second transistor are formed on the substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, and the first active layer contains silicon; the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor; the second active layer is located on a side of the first active layer away from the substrate;

[0009] A first insulating layer and a second insulating layer, wherein the first insulating layer is located on a side of the second active layer away from the substrate, and is located between the second gate and the second active layer, and the second insulating layer is located on a side of the second active layer facing the substrate; wherein,

[0010] The concentration of oxygen element in the first insulating layer is less than the concentration of oxygen element in the second insulating layer;

[0011] The display panel includes a pixel circuit and a driving circuit for providing driving signals to the pixel circuit. Among them, the driving circuit includes the second transistor, and the pixel circuit includes the first transistor or the driving circuit includes the first transistor.

[0012] In a second aspect, an embodiment of the present invention further provides a display device, and the display device includes the display panel described in the first aspect.

[0013] The display panel provided by the embodiment of the present invention includes a first transistor and a second transistor. The first active layer of the first transistor contains silicon, and the second active layer of the second transistor contains an oxide semiconductor. The first insulating layer is located on a side of the second active layer away from the substrate, and the second insulating layer is located on a side of the second active layer close to the substrate. By setting the concentration of oxygen element in the first insulating layer to be less than the concentration of oxygen element in the second insulating layer, that is, by appropriately reducing the concentration of oxygen element in the first insulating layer, the influence of defects in the first insulating layer on the second active layer is avoided; at the same time, the concentration of oxygen element in the second insulating layer is appropriately increased to ensure the normal function of the second active layer. In this way, the stability of the second transistor is improved, and the performance of the driving circuit is ensured to be good. Description of the Drawings

[0014] Figure 1 is a schematic structural diagram of a display panel provided by an embodiment of the present invention;

[0015] Figure 2 is a schematic structural diagram of another display panel provided by an embodiment of the present invention;

[0016] Figure 3 is a schematic structural diagram of another display panel provided by an embodiment of the present invention;

[0017] Figure 4 is a schematic structural diagram of another display panel provided by an embodiment of the present invention;

[0018] Figure 5 is a schematic structural diagram of another display panel provided by an embodiment of the present invention;

[0019] Figure 6 is a schematic structural diagram of another display panel provided by an embodiment of the present invention;

[0020] Figure 7 It is a schematic structural diagram of another display panel provided by an embodiment of the present invention;

[0021] Figure 8 It is a schematic structural diagram of another display panel provided by an embodiment of the present invention;

[0022] Figure 9 It is a schematic structural diagram of a display device provided by an embodiment of the present invention. Detailed implementation manners

[0023] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the present invention, rather than limiting the present invention. In addition, it should be noted that, for the sake of description, only the parts related to the present invention rather than all the structures are shown in the drawings.

[0024] Figure 1 It is a schematic structural diagram of a display panel provided by an embodiment of the present invention. As Figure 1 shown, the display panel 100 provided by the embodiment of the present invention includes: a substrate 10; a first transistor 20 and a second transistor 30. The first transistor 20 and the second transistor 30 are formed on the substrate 10. The first transistor 20 includes a first active layer 21, a first gate 22, a first source 23, and a first drain 24. The first active layer 21 contains silicon. The second transistor 30 includes a second active layer 31, a second gate 32, a second source 33, and a second drain 34. The second active layer 31 contains an oxide semiconductor. The second active layer 31 is located on the side of the first active layer 21 away from the substrate 10. A first insulating layer 40 and a second insulating layer 41. The first insulating layer 40 is located on the side of the second active layer 31 away from the substrate 10 and between the second gate 32 and the second active layer 31. The second insulating layer 41 is located on the side of the second active layer 31 facing the substrate 10. Among them, the concentration of oxygen element in the first insulating layer 40 is less than the concentration of oxygen element in the second insulating layer 41. The display panel 100 includes a pixel circuit ( Figure 1 not shown in the figure) and a driving circuit 50 for providing driving signals for the pixel circuit. Among them, the driving circuit 50 includes at least one second transistor 30. Among them, Figure 1 Taking the driving circuit 50 including both the first transistor 20 and the second transistor 30 as an example for illustration.

[0025] Exemplarily, as Figure 1 shown, the display panel 100 includes a display area AA and a non-display area NAA. The non-display area NAA is located on at least one side of the display area AA. Figure 1Taking the non-display area NAA being on one side of the display area AA as an example for illustration, where the driving circuit 50 is located in the non-display area NAA, and the driving circuit 50 provides driving signals for the pixel circuits ( Figure 1 not shown in the figure) in the display area AA, so that the pixel circuits drive the light-emitting elements located in the same sub-pixel to emit light, realizing the display of the display panel 100.

[0026] It should be noted that in this application, the first transistor 20 and the second transistor 30 can be transistors in the driving circuit, that is, the driving circuit 50 includes the first transistor 20 or the second transistor 30; in addition, the first transistor 20 and the second transistor 30 can be transistors in the pixel circuit, that is, the pixel circuit includes the first transistor 20 or the second transistor 30. For example, if the second transistor 30 is located in the pixel circuit, it can be a driving transistor or a switching transistor.

[0027] Among them, the concentrations defined in this application are atomic concentrations, that is, the atomic content per unit area, if there are no special requirements.

[0028] Exemplarily, as Figure 1 shown, the driving circuit 50 includes the first transistor 20 and the second transistor 30. The first transistor 20 can be a bottom-gate transistor or a top-gate transistor. Figure 1Taking the first transistor 20 as an example of a top-gate transistor, that is, the first gate 22 is located on the side of the first active layer 21 away from the substrate 10. In addition, the second insulating layer 41 is located on the side of the first gate 22 away from the substrate 10, the second active layer 31 is located on the side of the second insulating layer 41 away from the substrate 10, the first insulating layer 40 is located on the side of the second active layer away from the substrate 10, the second gate 32 is located on the side of the first insulating layer 40 away from the substrate 10, the first source 23, the first drain 24, the second source 33, and the second drain 34 are all located on the side of the second gate 32 away from the substrate 10 and are insulated from the second gate 32. Among them, the first source 23, the first drain 24, the second source 33, and the second drain 34 are arranged in the same layer, so that the process steps can be simplified. In addition, the first active layer 21 in the first transistor 20 contains silicon, and can be selected as polysilicon, that is, the first active layer 21 is a polysilicon active layer. For example, it is a low-temperature polysilicon (LTPS) active layer. The second active layer 31 in the second transistor 30 includes an oxide semiconductor, that is, the second active layer 31 is an oxide semiconductor active layer. For example, it is an IGZO active layer. The low-temperature polysilicon thin-film transistor has the advantages of high carrier mobility, fast response, and low power consumption, etc. The oxide semiconductor thin-film transistor has the advantage of low leakage current. When the driving circuit 50 includes the first transistor 20 and the second transistor 30, the driving circuit 50 takes into account the advantages of high carrier mobility, fast response, low power consumption, and low leakage current, etc., ensuring good performance of the driving circuit 50 and improving the display performance of the display panel 100.

[0029] Furthermore, the concentration of oxygen element in the first insulating layer 40 in this embodiment is less than the concentration of oxygen element in the second insulating layer 41. On the one hand, by appropriately reducing the concentration of oxygen element in the first insulating layer 40, when the first insulating layer 40 is used as a gate insulating layer, the problem of bond suspension of oxygen element during the film-forming process leading to defects is avoided, and further the problem that the existence of defects affects the stability of the second transistor 30 is avoided; on the other hand, by appropriately increasing the concentration of oxygen element in the second insulating layer 41, oxygen element is supplemented for the second active layer 31 containing an oxide semiconductor to ensure the normal function of the second active layer 31. That is to say, in this embodiment, by setting the concentration of oxygen element in the first insulating layer 40 to be less than the concentration of oxygen element in the second insulating layer 41, while not affecting the normal function of the second transistor 30, the stability of the second transistor 30 is improved, and the performance of the driving circuit 50 is ensured to be good.

[0030] It should be noted that the first insulating layer 40 is located on the side of the second active layer 31 facing away from the substrate 10 and between the second gate 32 and the second active layer 31. The second insulating layer 41 is located in the side of the second active layer 31 facing the substrate 10. The first insulating layer 40 and the second insulating layer 41 may be in contact with the second active layer 31. For example, see Figure 1 ; or the first insulating layer 40 and / or the second insulating layer 41 may not be in direct contact with the second active layer 31. That is, on the premise of not affecting the performance of the second transistor 30, other insulating layers are provided between the first insulating layer 40 and the second active layer 31, and / or other insulating layers are provided between the second insulating layer 41 and the second active layer 31. This embodiment does not specifically limit this.

[0031] In summary, the display panel provided by the embodiment of the present invention includes a first transistor and a second transistor. The first active layer of the first transistor contains silicon, and the second active layer of the second transistor contains an oxide semiconductor. The first insulating layer is located on the side of the second active layer facing away from the substrate, and the second insulating layer is located on the side of the second active layer close to the substrate. By setting the concentration of oxygen element in the first insulating layer to be less than the concentration of oxygen element in the second insulating layer, that is, by appropriately reducing the concentration of oxygen element in the first insulating layer, the defects in the first insulating layer are avoided from affecting the second active layer; at the same time, the concentration of oxygen element in the second insulating layer is appropriately increased to ensure the normal function of the second active layer. In this way, the stability of the second transistor is improved, and the performance of the driving circuit is ensured to be good.

[0032] Optionally, the ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer 40 is A, and the ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer 41 is B, where A < B.

[0033] Both the first insulating layer 40 and the second insulating layer 41 include oxygen element and silicon element. For example, it may be silicon oxide, but this embodiment does not specifically limit the materials of the first insulating layer 40 and the second insulating layer 41. Those skilled in the art can select according to actual situations as long as both the first insulating layer 40 and the second insulating layer 41 include oxygen element and silicon element.

[0034] Because the oxygen atoms and silicon atoms in the first insulating layer 40 and the second insulating layer 41 need to form bonds, in this embodiment, by appropriately reducing the ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer 40, the phenomenon of bond suspension in the oxygen element during the film formation process of the first insulating layer 40 can be reduced, ensuring the stability of the second transistor 30, and avoiding the more serious phenomenon of bond suspension in the oxygen element and the increase in defects when the ratio of the concentration of oxygen element to the concentration of silicon element is large, which affects the carriers in the second transistor 30, such as capture, and further avoiding the problem of affecting the stability of the second transistor 30.

[0035] Optionally, the first insulating layer 40 comprises silicon oxide SiO x , and the second insulating layer 41 comprises silicon oxide SiO y , where x is the ratio of the number of oxygen atoms to the number of silicon atoms in the first insulating layer 40, y is the ratio of the number of oxygen atoms to the number of silicon atoms in the second insulating layer 41, and x < y. That is, when both the first insulating layer 40 and the second insulating layer 41 comprise silicon oxide, by appropriately reducing the ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer 40, the phenomenon of dangling bonds in the oxygen element during the film formation process of the first insulating layer 40 can be reduced, the stability of the second transistor 30 can be ensured, and the problem that when the ratio of the concentration of oxygen element to the concentration of silicon element is relatively large, the phenomenon of dangling bonds in the oxygen element is more serious, resulting in an increase in defects and affecting carriers in the second transistor 30, such as capture, can be avoided, thereby avoiding the problem of affecting the stability of the second transistor 30.

[0036] Optionally, Figure 2 is a schematic structural diagram of another display panel provided by an embodiment of the present invention. As Figure 2 shown, the pixel circuit 60 further comprises a third transistor 70. The third transistor 70 comprises a third active layer 71, a third source electrode 73, a third drain electrode 74, and a fourth gate electrode 72. The third active layer 71 contains an oxide semiconductor. The display panel 100 further comprises a fourth insulating layer 43 and a fifth insulating layer 44. The fourth insulating layer 43 is located on the side of the third active layer 71 away from the substrate 10 and between the third active layer 71 and the fourth gate electrode 72. The fifth insulating layer 44 is located on the side of the third active layer 71 facing the substrate 10. Among them, the concentration of oxygen element in the fourth insulating layer 43 is less than the concentration of oxygen element in the fifth insulating layer 44. Among them, Figure 4 the pixel circuit 60 comprising the first transistor 20 is taken as an example for illustration.

[0037] Exemplarily, as Figure 2As shown, the display panel 100 includes a display area AA and a non-display area NAA. The driving circuit 50 is located in the non-display area NAA, and the pixel circuit 60 is located in the display area AA. The pixel circuit 60 includes a first transistor 20 and a third transistor 70. The third active layer 71 in the third transistor 70 includes an oxide semiconductor, that is, the third active layer 71 is an oxide semiconductor active layer. For example, it is an IGZO active layer. The leakage current of the oxide semiconductor thin-film transistor is very small, which can ensure that the leakage current in the working process of the pixel circuit 60 is small. Also, since the first active layer 21 in the first transistor 20 contains silicon and can be selected as polysilicon, that is, the first active layer 21 is a polysilicon active layer. For example, it is a low-temperature polysilicon (LTPS) active layer, and the low-temperature polysilicon thin-film transistor has the advantages of high carrier mobility, fast response, and low power consumption. Therefore, when the pixel circuit 60 includes the first transistor 20 and the third transistor 70, the pixel circuit 60 takes into account the advantages of high carrier mobility, fast response, low power consumption, and small leakage current, ensuring good performance of the pixel circuit 60 and improving the display performance of the display panel 100. In addition, in this embodiment, not only is the second transistor 30 in the driving circuit 50 set as an oxide semiconductor transistor, but also the third transistor 70 in the pixel circuit 60 is set as an oxide semiconductor transistor. Thus, the performance of both the driving circuit 50 and the pixel circuit 60 is ensured to be good, further improving the display performance of the display panel 100.

[0038] Furthermore, in this embodiment, by setting the concentration of oxygen element in the fourth insulating layer 43 to be less than the concentration of oxygen element in the fifth insulating layer 44. On the one hand, by appropriately reducing the concentration of oxygen element in the fourth insulating layer 43, when the fourth insulating layer 43 is used as the gate insulating layer, the problem of dangling bonds of oxygen element during film formation and resulting defects is avoided, and further the problem that the existence of defects affects the stability of the third transistor 70 is avoided. On the other hand, by appropriately increasing the concentration of oxygen element in the fifth insulating layer 44, oxygen element is supplemented for the third active layer 71 containing the oxide semiconductor to ensure the normal function of the third active layer 71. That is to say, in this embodiment, by setting the concentration of oxygen element in the fourth insulating layer 43 to be less than the concentration of oxygen element in the fifth insulating layer 44, while not affecting the normal function of the third transistor 70, the stability of the third transistor 70 is improved, ensuring good performance of the pixel circuit 60.

[0039] It should be noted that the fourth insulating layer 43 can be provided on the same layer as the first insulating layer 40, and the fifth insulating layer 44 can be provided on the same layer as the second insulating layer 41; or the fourth insulating layer 43 is not provided on the same layer as the first insulating layer 40, and the fifth insulating layer 44 is not provided on the same layer as the second insulating layer 41, where Figure 4An example is given where the fourth insulating layer 43 is provided on the same layer as the first insulating layer 40, and the fifth insulating layer 44 is provided on the same layer as the second insulating layer 41. In addition, in this embodiment, by providing the third source electrode 73 and the third drain electrode 74 in the third transistor 70 on the same layer as the second source electrode 33 and the second drain electrode 34 in the second transistor 30 and the first source electrode 23 and the first drain electrode 24 in the first transistor 20, the process steps can be simplified and the preparation efficiency of the display panel can be improved.

[0040] Based on the above solution, optionally, the third transistor 70 is a switching transistor of the pixel circuit 60; the difference between the concentration C1 of oxygen elements in the first insulating layer 40 and the concentration C2 of oxygen elements in the second insulating layer 41 is R1 = C2 - C1, and the difference between the concentration C4 of oxygen elements in the fourth insulating layer 43 and the concentration C5 of oxygen elements in the fifth insulating layer 44 is R2 = C5 - C4, where R1 ≥ R2.

[0041] The pixel circuit 60 is sometimes applied to a low-frequency driving mode. When the pixel circuit 60 is applied to the low-frequency driving mode, the switching transistor in the pixel circuit 60 is in the off state for a long time, while the opening operation of the transistors in the driving circuit 50 is relatively frequent. By appropriately increasing the difference between the concentration of oxygen elements in the first insulating layer 40 and the concentration of oxygen elements in the second insulating layer 41 in the driving circuit 50, that is, making the concentration of oxygen elements in the first insulating layer 40 smaller, the influence of defects on the second transistor 30 can be reduced; making the concentration of oxygen elements in the second insulating layer 41 larger to supplement sufficient oxygen elements to the second active layer 31, so that the driving circuit 50 has high stability. Thus, even if the opening operation of the second transistor 30 in the driving circuit 50 is relatively frequent, the overall characteristics of the driving circuit 50 can be ensured to be good.

[0042] Optionally, the third transistor 70 is a switching transistor of the pixel circuit 60; the concentration of oxygen elements in the first insulating layer 40 is less than the concentration of oxygen elements in the fourth insulating layer 43. That is, the concentration of oxygen elements in the first insulating layer 40 in the second transistor 30 in the driving circuit 50 is lower, avoiding the problem that when the first insulating layer 40 is used as the gate insulating layer, the bonds of oxygen elements are suspended during the film formation process, resulting in defects, and further avoiding the problem that the existence of defects affects the stability of the second transistor 30, ensuring that the second transistor 30 has high stability. Thus, even if the opening operation of the second transistor 30 in the driving circuit 50 is relatively frequent, the overall characteristics of the driving circuit 50 can be ensured to be good.

[0043] It should be noted that when the first insulating layer 40 and the fourth insulating layer 43 are in the same film layer, for example, different concentrations of oxygen elements can be implanted into the first insulating layer 40 and the fourth insulating layer 43 respectively by using an ion implantation process, so that the concentration of oxygen elements in the first insulating layer 40 is less than the concentration of oxygen elements in the fourth insulating layer 43.

[0044] Optionally, the third transistor 70 is a driving transistor of the pixel circuit 60; the difference between the concentration C1 of oxygen elements in the first insulating layer 40 and the concentration C2 of oxygen elements in the second insulating layer 41 is R1 = C2 - C1, and the difference between the concentration C4 of oxygen elements in the fourth insulating layer 43 and the concentration C5 of oxygen elements in the fifth insulating layer 44 is R2 = C5 - C4, where R1 ≤ R2.

[0045] The pixel circuit 60 is sometimes applied to a low-frequency driving mode. When the pixel circuit 60 is applied to the low-frequency driving mode, the driving transistor in the pixel circuit 60 remains on for a longer time than the transistors in the driving circuit 50. By setting a larger difference between the concentration of oxygen elements in the fourth insulating layer 43 and the concentration of oxygen elements in the fifth insulating layer 44 in the pixel circuit 60, that is, the concentration of oxygen elements in the fourth insulating layer 43 is lower, the influence of defects on the third transistor 70 is reduced; the concentration of oxygen elements in the fifth insulating layer 44 is higher to supplement sufficient oxygen elements for the third active layer 71, so as to ensure that the third transistor 70 has high stability. In this way, even if the third transistor 70 in the pixel circuit 60 remains on for a long time, the overall characteristics of the pixel circuit 60 can be ensured to be good.

[0046] Optionally, the third transistor 70 is a driving transistor of the pixel circuit 60; the concentration of oxygen elements in the first insulating layer 40 is greater than the concentration of oxygen elements in the fourth insulating layer 43. That is, the concentration of oxygen elements in the fourth insulating layer 43 in the third transistor 70 in the pixel circuit 60 is lower, avoiding the problem that when the fourth insulating layer 43 is used as a gate insulating layer, the bonds of oxygen elements are suspended during the film formation process, resulting in defects, and further avoiding the problem that the existence of defects affects the stability of the third transistor 70. In this way, the third transistor 70 is ensured to have high stability. Even if the third transistor 70 in the pixel circuit 60 remains on for a longer time, the overall characteristics of the pixel circuit 60 can be ensured to be good. At this time, when the first insulating layer 40 and the fourth insulating layer 43 are in the same film layer, different concentrations of oxygen elements can also be implanted into the first insulating layer 40 and the fourth insulating layer 43 respectively by using an ion implantation process, so that the concentration of oxygen elements in the first insulating layer 40 is greater than the concentration of oxygen elements in the fourth insulating layer 43.

[0047] Optionally, Figure 3 is a schematic structural diagram of another display panel provided by an embodiment of the present invention, as Figure 3As shown, the display panel 100 further includes a fourth transistor 80. The fourth transistor 80 includes a fourth active layer 81, a fourth source electrode 83, a fourth drain electrode 84, and a fifth gate electrode 82. The fourth active layer 81 contains an oxide semiconductor. The display panel 100 further includes a sixth insulating layer 45 and a seventh insulating layer 46. The sixth insulating layer 45 is located on a side of the fourth active layer 81 facing away from the substrate 10 and between the fourth active layer 81 and the fifth gate electrode 82. The seventh insulating layer 46 is located on a side of the fourth active layer 81 facing the substrate 10. Wherein, the concentration of oxygen element in the sixth insulating layer 45 is less than the concentration of oxygen element in the seventh insulating layer 46.

[0048] It should be noted that when the display panel 100 includes the fourth transistor 80, the fourth transistor 80 can be a transistor in the driving circuit 50 or a transistor in the pixel circuit 60. This embodiment does not make a specific limitation. Figure 3 Only the case where the fourth transistor 80 is a transistor in the pixel circuit 60 is taken as an example for illustration. In addition, this embodiment does not limit the specific structure of the pixel circuit 60. For example, it can include seven transistors (7T) or nine transistors (9T), etc.

[0049] Specifically, the pixel circuit 60 further includes a fourth transistor 80, and the fourth active layer 81 in the fourth transistor 80 can also be an oxide semiconductor active layer. For example, it is an IGZO active layer. That is, both transistors in the pixel circuit 60 in this embodiment are oxide semiconductor transistors, ensuring that the leakage current is small during the operation of the pixel circuit 60 and ensuring good performance of the pixel circuit 60. In addition, in this embodiment, by setting the concentration of oxygen element in the sixth insulating layer 45 to be less than the concentration of oxygen element in the seventh insulating layer 46, on the one hand, by appropriately reducing the concentration of oxygen element in the sixth insulating layer 45, when the sixth insulating layer 45 is used as a gate insulating layer, the problem of dangling bonds of oxygen element during film formation, which may lead to defects, is avoided. The existence of defects will affect the stability of the fourth transistor 80. On the other hand, by appropriately increasing the concentration of oxygen element in the seventh insulating layer 46, oxygen element is supplemented to the fourth active layer 41 containing an oxide semiconductor to ensure the normal function of the fourth active layer 41. That is to say, in this embodiment, by setting the concentration of oxygen element in the sixth insulating layer 45 to be less than the concentration of oxygen element in the seventh insulating layer 46, while not affecting the normal function of the fourth transistor 80, the stability of the fourth transistor 80 is improved, and the performance of the pixel circuit 60 is ensured to be good.

[0050] It should be noted that the sixth insulating layer 45, the fourth insulating layer 43, and the first insulating layer 40 may be located in the same film layer, may be located in different film layers respectively, or any two insulating layers may be located in the same film layer; similarly, the seventh insulating layer 46, the fifth insulating layer 44, and the second insulating layer 41 may be located in the same film layer, may be located in different film layers respectively, or any two insulating layers may be located in the same film layer. Among them, Figure 3 Taking the case where the sixth insulating layer 45, the fourth insulating layer 43, and the first insulating layer 40 are arranged in the same layer, and the seventh insulating layer 46, the fifth insulating layer 44, and the second insulating layer 41 are arranged in the same layer as an example for illustration. In addition, in this embodiment, by arranging the fourth source electrode 83 and the fourth drain electrode 84 in the fourth transistor 80, the third source electrode 73 and the third drain electrode 74 in the third transistor 70, the second source electrode 33 and the second drain electrode 34 in the second transistor 30, and the first source electrode 23 and the first drain electrode 24 in the first transistor 20 in the same layer, the process steps can be simplified and the preparation efficiency of the display panel can be improved.

[0051] On the basis of the above solution, optionally, the third transistor 70 is a driving transistor of the pixel circuit 60, and the fourth transistor 80 is a switching transistor of the pixel circuit 60. Among them, the difference between the concentration C4 of oxygen element in the fourth insulating layer 43 and the concentration C5 of oxygen element in the fifth insulating layer 44 is R2 = C5 - C4, and the difference between the concentration C6 of oxygen element in the sixth insulating layer 45 and the concentration C7 of oxygen element in the seventh insulating layer 46 is R3 = C7 - C6, where R2 ≥ R3.

[0052] Generally speaking, in a pixel circuit, a transistor whose gate is connected to a scanning signal or a light emission control signal is a switching transistor, and transistors other than the switching transistor in the pixel circuit are driving transistors. The driving transistors are serially arranged on the transmission path of the first power signal (PVDD signal) and the second power signal (PVEE signal), and the gate of the driving transistor writes a data signal. As the data signal is written, the gate potential of the driving transistor changes. The pixel circuit is sometimes applied to a low-frequency driving mode. When the pixel circuit is applied to the low-frequency driving mode, the driving transistors in the pixel circuit remain in the on state for a longer time than the switching transistors. In this embodiment, by setting a larger difference between the concentration of oxygen element in the fourth insulating layer 43 and the concentration of oxygen element in the fifth insulating layer 44 in the pixel circuit 60, that is, the concentration of oxygen element in the fourth insulating layer 43 is smaller, the influence of defects on the third transistor 70 can be reduced; the concentration of oxygen element in the fifth insulating layer 44 is larger to supplement sufficient oxygen element for the third active layer 71, so as to ensure that the third transistor 70 has high stability. In this way, even if the third transistor 70 in the pixel circuit 60 remains in the on state for a long time, the overall characteristics of the pixel circuit 60 can be ensured to be good.

[0053] Optionally, the third transistor 70 is a driving transistor of the pixel circuit 60, and the fourth transistor 80 is a switching transistor of the pixel circuit 60. The concentration of oxygen element in the fourth insulating layer 43 is less than that in the sixth insulating layer 45. That is, the concentration of oxygen element in the fourth insulating layer 43 of the third transistor 70 in the pixel circuit 60 is lower, which avoids the problem that when the fourth insulating layer 43 is used as a gate insulating layer, the bonds of oxygen element are suspended during the film forming process, resulting in defects, and further avoids the problem that the existence of defects affects the stability of the third transistor 70. In this way, the third transistor 70 is ensured to have high stability. Even if the third transistor 70 in the pixel circuit 60 remains in the on state for a long time, the overall characteristics of the pixel circuit 60 can be ensured to be good. Similarly, when the fourth insulating layer 43 and the sixth insulating layer 45 are in the same film layer, the ion implantation process can be used to make the concentrations of oxygen element in the fourth insulating layer 43 and the sixth insulating layer 45 different.

[0054] Optionally, continue to refer to Figure 1 , the display panel 100 further includes a third insulating layer 42, and the third insulating layer 42 is located on the side of the second gate 32 away from the substrate 10; the concentration of oxygen element in the third insulating layer 42 is greater than that in the first insulating layer 40.

[0055] The third insulating layer 42 is an insulating layer on the side of the second gate 32 away from the substrate 10. By appropriately increasing the concentration of oxygen element in the third insulating layer 42, the density of the third insulating layer 42 is improved. In this way, the second transistor 30 is protected by the third insulating layer 42 to prevent external water oxygen, hydrogen element and other elements from entering the second transistor 30 and affecting the performance of the second transistor 30.

[0056] Optionally, the ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer 40 is A, and the ratio of the concentration of oxygen element to the concentration of silicon element in the third insulating layer 42 is C, where A < C. When both the first insulating layer 40 and the second insulating layer 41 include oxygen element and silicon element, by increasing the ratio of the concentration of oxygen element to the concentration of silicon element in the third insulating layer 42, the second transistor 30 is protected to prevent the concentration of oxygen element in the third insulating layer 42 from being too low and the concentration of silicon element from being too high, resulting in a decrease in the density of the third insulating layer 42 and affecting the ability of the third insulating layer 42 to protect the second transistor 30.

[0057] Optionally, the concentration of oxygen element in the third insulating layer 42 is less than that in the second insulating layer 41. That is, although the concentration of oxygen element in the third insulating layer 42 is greater than that in the first insulating layer 40 to protect the second transistor 30, compared with the concentration of oxygen element in the second insulating layer 41, the concentration of oxygen element in the third insulating layer 42 is still less than that in the second insulating layer 414. That is, by setting a relatively high concentration of oxygen element in the second insulating layer 41, oxygen element is supplied to the second active layer 31 containing an oxide semiconductor to ensure the normal function of the second active layer 31.

[0058] Optionally, the ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer 41 is B, and the ratio of the concentration of oxygen element to the concentration of silicon element in the third insulating layer 42 is C, where B > C. That is, when both the second insulating layer 41 and the third insulating layer 42 contain oxygen element and silicon element, by setting an increased ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer 41, oxygen element is supplied to the second active layer 31 containing an oxide semiconductor to ensure the normal function of the second active layer 31.

[0059] Optionally, the ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer 40 is A, the ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer 41 is B, and the ratio of the concentration of oxygen element to the concentration of silicon element in the third insulating layer 42 is C, where (B - 1) ≤ 2(C - 1) - (A - 1). That is, by setting (B - 1) ≤ 2(C - 1) - (A - 1), the ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer 40 can be made relatively small. In this way, the stability of the second transistor 30 can be improved, and when the first insulating layer 40 is used as the gate insulating layer, the problem of oxygen bond suspension during film formation, which may cause defects, can be avoided. The existence of these defects will affect the stability of the second transistor 30.

[0060] On the basis of the above solution, optionally, (B - 1) - (C - 1) ≤ 1 / 2×[(C - 1) - (A - 1)].

[0061] In this embodiment, by setting the concentration ratio of oxygen element to silicon element in the first insulating layer 40, the concentration ratio of oxygen element to silicon element in the second insulating layer 41 as B, and the concentration ratio of oxygen element to silicon element in the third insulating layer 42 as C to satisfy (B - 1) - (C - 1) ≤ 1 / 2 × [(C - 1) - (A - 1)], in this way, it is possible to reduce the defects caused by the dangling bonds of oxygen elements during the film formation of the first insulating layer 40, and avoid the influence of the existence of defects on the stability of the second transistor 30; at the same time, the second insulating layer 41 replenishes oxygen elements for the second active layer 31 containing the oxide semiconductor to ensure the normal function of the second active layer 31; and by the sufficient oxygen elements, the density of the third insulating layer 42 is increased to protect the second transistor 30 and further improve the stability of the second transistor 30.

[0062] It can be understood that since the above examples only illustrate the setting of the concentration of oxygen elements in the first insulating layer 40, the second insulating layer 41, and the third insulating layer 43 near the second transistor 30. However, when the display panel 100 further includes a third transistor 70 and a fourth transistor 80, for example, continue to refer to Figure 3 , the fourth insulating layer 43, the fifth insulating layer 44, and the insulating layer 47 on the side of the fourth insulating layer 43 away from the fifth insulating layer 44 also apply to the above rules; and the sixth insulating layer 45, the seventh insulating layer 46, and the insulating layer 48 on the side of the sixth insulating layer 45 away from the seventh insulating layer 46 also apply to the above rules, which will not be elaborated here.

[0063] The above embodiments are all described by taking the second transistor 30 as a top-gate transistor as an example. Optionally, the second transistor 30 can also be a double-gate transistor. When the second transistor 30 is a double-gate transistor, in addition to satisfying the rules of the oxygen element concentration in the insulating layer in the above embodiments, it can also be set separately according to the characteristics of the double-gate transistor itself.

[0064] Optionally, Figure 4 is a schematic structural diagram of another display panel provided by an embodiment of the present invention. As Figure 4 shown, the second transistor 30 includes a third gate 35, and the third gate 35 is located on the side of the second insulating layer 41 facing the substrate 10. Among them, the thickness H1 of the first insulating layer 40 is less than the thickness H2 of the second insulating layer 41.

[0065] Specifically, the second transistor 30 not only includes a second gate 32, but also includes a third gate 35, that is, the second transistor 30 is a double-gate transistor. In this way, the mobility of carriers in the second transistor 30 can be enhanced, and the response ability of the second transistor 30 can be enhanced. It should be noted that since the second transistor 30 can be an oxide semiconductor transistor, generally speaking, the volume of an oxide semiconductor transistor is relatively large. Setting the second transistor 30 as a double-gate transistor with a top-gate and a bottom-gate stacked structure is beneficial to reducing the volume of the third transistor 30, and further reducing the area of the non-display area NAA where the driving circuit 50 is located, so as to achieve a narrow border of the display panel 100. In addition, by setting the thickness H1 of the first insulating layer 40 to be less than the thickness H2 of the second insulating layer 41, that is, the thickness of the insulating layer of the main gate is less than the thickness of the insulating layer of the auxiliary gate, the control ability of the main gate over the second transistor 30 can be ensured.

[0066] When the second transistor 30 includes a third gate 35 and the third gate 35 is located on the side of the second insulating layer 41 facing the substrate 10, optionally, in the second insulating layer 41, the concentration of oxygen element on the side close to the second active layer 31 is greater than the concentration of oxygen element on the side far from the second active layer 31.

[0067] The advantage of this setting is that, on the one hand, the relatively high concentration of oxygen element on the side close to the second active layer 31 in the second insulating layer 41 supplements sufficient oxygen element to the second active layer 31 containing an oxide semiconductor, ensuring the normal function of the second active layer 31; on the other hand, the relatively low concentration of oxygen element on the side far from the second active layer 31 in the second insulating layer 41 is used to avoid the problem that the oxygen element bonds are suspended during the film formation process of the second insulating layer 41, resulting in defects, and further avoiding the problem that the existence of defects affects the stability of the second transistor 30. In this way, the second transistor 30 is ensured to have good performance.

[0068] Based on the above solution, optionally, Figure 5 is a schematic structural diagram of another display panel provided by an embodiment of the present invention. As Figure 5 shown, the second insulating layer 41 includes a first sub-insulating layer 411 and a second sub-insulating layer 412. The second sub-insulating layer 412 is located on the side of the first sub-insulating layer 411 facing away from the second active layer 31. Both the first sub-insulating layer 411 and the second sub-insulating layer 412 include silicon oxide, and among them, the concentration of oxygen element in the first sub-insulating layer 411 is greater than the concentration of oxygen element in the second sub-insulating layer 412.

[0069] In this embodiment, both the first sub-insulating layer 411 and the second sub-insulating layer 412 include silicon oxide. However, the concentration of oxygen element in the first sub-insulating layer 411 and the second sub-insulating layer 412 is different. For example, the concentration of oxygen element in the first sub-insulating layer 411 is greater than that in the second sub-insulating layer 412. That is, by appropriately increasing the concentration of oxygen element in the first sub-insulating layer 411, sufficient oxygen element can be supplied to the second active layer 31 containing the oxide semiconductor to ensure the normal function of the second active layer 31. At the same time, the concentration of oxygen element in the second sub-insulating layer 412 is appropriately reduced to avoid the problem that the bonds of oxygen element are suspended during the film formation process of the second sub-insulating layer 412, resulting in defects, and further avoiding the influence of the defects on the stability of the second transistor 30. In this way, the second transistor 30 is ensured to have good performance.

[0070] On the basis of the above solution, optionally, the concentration of hydrogen element in the second sub-insulating layer 412 is greater than that in the first sub-insulating layer 411. The defects caused by the suspension of the bonds of oxygen element inside the second sub-insulating layer 412 are repaired by the hydrogen element in the second sub-insulating layer 412 to ensure the stability of the second transistor 30 and further improve the performance of the second transistor 30.

[0071] It should be noted that Figure 5 Only when the second transistor 30 is a double-gate transistor, the relationship between the thickness H1 of the first insulating layer 40 and the thickness H2 of the second insulating layer 41, the change in the concentration of oxygen element in the second insulating layer 41 are described. And when the second insulating layer 41 includes the first sub-insulating layer 411 and the second sub-insulating layer 412, the materials of the first sub-insulating layer 411 and the second sub-insulating layer 412 and the relationship between the concentration of oxygen element are defined, and the relationship between the concentration of hydrogen element in the first sub-insulating layer 411 and the second sub-insulating layer 412 is defined. It can be understood that when the third transistor 70 is a double-gate transistor, the fourth insulating layer 43 and the fifth insulating layer 44 also satisfy the above relationship; when the fourth transistor 80 is a double-gate transistor, the sixth insulating layer 45 and the seventh insulating layer 46 also satisfy the above relationship, which will not be elaborated here.

[0072] On the basis of the above solutions, optionally, Figure 6 is a schematic structural diagram of another display panel provided by the embodiment of the present invention, as Figure 6As shown in the figure, the substrate 10 in the embodiment of the present invention can be a flexible substrate or a rigid substrate, and the embodiment of the present invention does not limit this. When the substrate 10 is a flexible substrate, the substrate 10 can include a polyimide substrate to ensure good high-temperature resistance and good insulation performance of the flexible substrate; wherein the substrate 10 can include one layer of polyimide substrate or two layers of polyimide substrate, and the embodiment of the present invention also does not limit this. When the substrate 10 includes one layer of polyimide substrate, the film layer structure of the substrate 10 is simple, the preparation process is simple, and it is beneficial to meet the design requirements of thinning the substrate 10 and the entire display panel. When the substrate 10 includes at least two layers of polyimide substrate, a buffer layer is further provided between the polyimide substrates to enhance the adhesion between the polyimide substrates; when the substrate 10 is formed by stacking the polyimide substrate and the buffer layer, it can block some impurities and / or moisture in the outside world from penetrating from the bottom substrate and affecting the first active layer 21. In addition, since the polyimide substrate is generally prepared on a rigid substrate, after the driving circuit 50, pixel circuit, and light-emitting element are prepared on the substrate 10, the rigid substrate is generally removed by laser lift-off technology. When the rigid substrate is removed by laser lift-off, the polyimide substrate may be damaged. Therefore, when the substrate 10 includes at least two polyimide substrates, for example, a first polyimide substrate and a second polyimide substrate, a first buffer layer is provided between the first polyimide substrate and the second polyimide substrate, and a second buffer layer is provided between the second polyimide substrate and the first active layer 21. The first polyimide substrate is prepared on the rigid substrate, and the driving circuit 50 and the pixel circuit are prepared on the second buffer layer. Even if the first polyimide substrate may be damaged when the rigid substrate is removed by laser lift-off, the integrity of the second polyimide substrate and the integrity of the second buffer layer on the second polyimide substrate can still be ensured, thus ensuring the integrity of the entire display panel. Figure 6 Taking the substrate 10 as a flexible substrate as an example, the substrate 10 includes a first flexible substrate 11 and a second flexible substrate 13 that are both made of polyimide, a first buffer layer 12 located between the first flexible substrate 11 and the second flexible substrate 13, and a second buffer layer 14 located between the second flexible substrate 13 and the first active layer 21.

[0073] Based on the same inventive concept, the embodiment of the present invention also provides a display panel. Figure 7 It is a schematic structural diagram of another display panel provided by the embodiment of the present invention, as Figure 7As shown in the figure, the display panel 100 provided by the embodiment of the present invention includes a substrate 10; a first transistor 20 and a second transistor 30, the first transistor 20 and the second transistor 30 are formed on the substrate 10, the first transistor 20 includes a first active layer 21, a first gate 22, a first source 23 and a first drain 24, and the first active layer 21 contains silicon; the second transistor 30 includes a second active layer 31, a second gate 32, a third gate 35, a second source 33 and a second drain 34, and the second active layer 31 contains an oxide semiconductor; the second active layer 31 is located on the side of the first active layer 21 away from the substrate 10; a first insulating layer 40 and a second insulating layer 41, the first insulating layer 40 and the second insulating layer 41 are respectively located on both sides of the second active layer 31, the first insulating layer 40 is located between the second gate 32 and the second active layer 31, the second insulating layer 41 is located between the third gate 35 and the second active layer 31, and the thickness H1 of the first insulating layer 40 is less than the thickness H2 of the second insulating layer 41; wherein, the concentration of oxygen element in the first insulating layer 40 is less than the concentration of oxygen element in the second insulating layer 41; the display panel 100 includes a pixel circuit ( Figure 7 not shown in the figure) and a driving circuit 50 for providing driving signals to the pixel circuit, wherein, the driving circuit 50 includes at least one second transistor 30, wherein, Figure 7 Taking the driving circuit 50 including the first transistor 20 and the second transistor 30 as an example for illustration.

[0074] Exemplarily, continue to refer to Figure 7 , when the second gate 32 is the main gate of the second transistor 30 and is the top gate of the second transistor 30, by setting the thickness H1 of the first insulating layer 40 corresponding to the main gate to be less than the thickness H2 of the second insulating layer 41 corresponding to the auxiliary gate, the control ability of the main gate on the second transistor 30 is ensured.

[0075] Exemplarily, Figure 8 is a schematic structural diagram of another display panel provided by the embodiment of the present invention. As Figure 8 shown, when the second gate 32 is the main gate of the second transistor 30 and is the bottom gate of the second transistor 30, by setting the thickness H1 of the first insulating layer 40 corresponding to the main gate to be less than the thickness H2 of the second insulating layer 41 corresponding to the auxiliary gate, the control ability of the main gate on the second transistor 30 is ensured.

[0076] In the display panel provided by the embodiment of the present invention, by setting the concentration of oxygen element in the first insulating layer (i.e., the insulating layer of the main gate) to be less than the concentration of oxygen element in the second insulating layer (the insulating layer of the auxiliary gate), that is, by appropriately reducing the concentration of oxygen element in the first insulating layer, the influence of defects in the first insulating layer on the second active layer can be avoided; by appropriately increasing the concentration of oxygen element in the second insulating layer, the normal function of the second active layer can be ensured. In this way, the stability of the second transistor can be improved, and the performance of the driving circuit can be ensured to be good; at the same time, by setting the thickness of the first insulating layer (i.e., the insulating layer of the main gate) to be less than the thickness of the second insulating layer (the insulating layer of the auxiliary gate), the control ability of the main gate over the second transistor can be ensured.

[0077] Based on the same inventive concept, the embodiment of the present invention also provides a display device, and the display device includes any one of the display panels provided by the above embodiments. Exemplarily, as Figure 9 shown, the display device 1000 includes a display panel 100. Therefore, the display device also has the beneficial effects of the display panel in the above embodiments. The same parts can be understood by referring to the explanation of the display panel above, and will not be repeated hereinafter.

[0078] The display device 1000 provided by the embodiment of the present invention can be Figure 9 the mobile phone shown, or any electronic product with a display function, including but not limited to the following categories: television, notebook computer, desktop display, tablet computer, digital camera, smart bracelet, smart glasses, vehicle-mounted display, industrial control equipment, medical display screen, touch interaction terminal, etc. The embodiment of the present invention does not make special limitations on this.

[0079] Note that the above is only the preferred embodiment of the present invention and the applied technical principle. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described here. Various obvious changes, re-adjustments and substitutions can be made by those skilled in the art without departing from the protection scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments only. Without departing from the inventive concept of the present invention, more other equivalent embodiments can be included, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A display panel, characterized in that, Including: A substrate; A first transistor, a second transistor, and a third transistor, which are formed on the substrate. The first transistor includes a first active layer, a first gate, a first source, and a first drain, and the first active layer contains silicon; the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor; the third transistor includes a third active layer, a fourth gate, a third source, and a third drain, and the third active layer contains an oxide semiconductor; A first insulating layer and a second insulating layer. The first insulating layer is located on a side of the second active layer away from the substrate and between the second gate and the second active layer, and the second insulating layer is located on a side of the second active layer facing the substrate; A fourth insulating layer and a fifth insulating layer. The fourth insulating layer is located on a side of the third active layer away from the substrate and between the fourth gate and the third active layer, and the fifth insulating layer is located on a side of the third active layer facing the substrate; wherein, The concentration of oxygen element in the first insulating layer is less than the concentration of oxygen element in the second insulating layer; The concentration of oxygen element in the fourth insulating layer is less than the concentration of oxygen element in the fifth insulating layer.

2. The display panel according to claim 1, wherein The display panel includes a pixel circuit; The third transistor is a switching transistor of the pixel circuit; The difference between the concentration C1 of oxygen element in the first insulating layer and the concentration C2 of oxygen element in the second insulating layer is R1 = C2 - C1, and the difference between the concentration C4 of oxygen element in the fourth insulating layer and the concentration C5 of oxygen element in the fifth insulating layer is R2 = C5 - C4; wherein, R1 ≥ R2.

3. The display panel according to claim 1, wherein The display panel includes a pixel circuit; The third transistor is a switching transistor of the pixel circuit; The concentration of oxygen element in the first insulating layer is less than the concentration of oxygen element in the fourth insulating layer.

4. The display panel according to claim 1, wherein The display panel includes a pixel circuit; The third transistor is a driving transistor of the pixel circuit; The difference between the concentration C1 of oxygen element in the first insulating layer and the concentration C2 of oxygen element in the second insulating layer is R1 = C2 - C1, and the difference between the concentration C4 of oxygen element in the fourth insulating layer and the concentration C5 of oxygen element in the fifth insulating layer is R2 = C5 - C4; wherein, R1 ≤ R2.

5. The display panel according to claim 1, wherein The display panel includes a pixel circuit; The third transistor is a driving transistor of the pixel circuit; The concentration of oxygen element in the first insulating layer is greater than the concentration of oxygen element in the fourth insulating layer.

6. The display panel according to claim 1, wherein, The display panel further includes a fourth transistor, which includes a fourth active layer, a fifth gate, a fourth source, and a fourth drain, and the fourth active layer contains an oxide semiconductor; The display panel further includes a sixth insulating layer and a seventh insulating layer. The sixth insulating layer is located on a side of the fourth active layer facing away from the substrate, and is located between the fourth active layer and the fifth gate. The seventh insulating layer is located on a side of the fourth active layer facing the substrate; wherein, The concentration of oxygen element in the sixth insulating layer is less than the concentration of oxygen element in the seventh insulating layer.

7. The display panel according to claim 6, wherein The display panel includes a pixel circuit; The third transistor is a driving transistor of the pixel circuit, and the fourth transistor is a switching transistor of the pixel circuit, wherein, The difference between the concentration C4 of oxygen element in the fourth insulating layer and the concentration C5 of oxygen element in the fifth insulating layer is R2 = C5 - C4. The difference between the concentration C6 of oxygen element in the sixth insulating layer and the concentration C7 of oxygen element in the seventh insulating layer is R3 = C7 - C6; wherein, R2 ≥ R3.

8. The display panel according to claim 6, wherein The display panel includes a pixel circuit; The third transistor is a driving transistor of the pixel circuit, and the fourth transistor is a switching transistor of the pixel circuit, wherein, The concentration of oxygen element in the fourth insulating layer is less than the concentration of oxygen element in the sixth insulating layer.

9. The display panel according to claim 1, wherein, The ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer is A, and the ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer is B; wherein, A < B.

10. The display panel according to claim 1, wherein, The first insulating layer includes silicon oxide SiOx, and the second insulating layer includes silicon oxide SiOy. Wherein, x is the ratio of the number of oxygen atoms to the number of silicon atoms in the first insulating layer, and y is the ratio of the number of oxygen atoms to the number of silicon atoms in the second insulating layer, and x < y.

11. The display panel according to claim 1, wherein, The second transistor includes a third gate, and the third gate is located on a side of the second insulating layer facing the substrate, wherein, The thickness of the first insulating layer is less than the thickness of the second insulating layer.

12. The display panel according to claim 1, wherein, In the second insulating layer, the concentration of oxygen element on a side close to the second active layer is greater than the concentration of oxygen element on a side far from the second active layer.

13. The display panel according to claim 12, wherein, The second insulating layer includes a first sub-insulating layer and a second sub-insulating layer. The second sub-insulating layer is located on a side of the first sub-insulating layer facing away from the second active layer. Both the first sub-insulating layer and the second sub-insulating layer include silicon oxide, wherein, The concentration of oxygen element in the first sub-insulating layer is greater than the concentration of oxygen element in the second sub-insulating layer.

14. The display panel according to claim 13, wherein, The concentration of hydrogen element in the second sub-insulating layer is greater than the concentration of hydrogen element in the first sub-insulating layer.

15. The display panel according to claim 1, wherein, The display panel includes a pixel circuit and a driving circuit for providing driving signals to the pixel circuit. Among them, the driving circuit includes the second transistor, the pixel circuit includes the third transistor or the driving circuit includes the third transistor, and the pixel circuit includes the first transistor or the driving circuit includes the first transistor.

16. A display panel, characterized in that, Comprising: A substrate; A first transistor, a second transistor, and a third transistor, which are formed on the substrate. The first transistor includes a first active layer, a first gate, a first source, and a first drain, and the first active layer contains silicon; the second transistor includes a second active layer, a second gate, a third gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor; the third transistor includes a third active layer, a fourth gate, a third source, and a third drain, and the third active layer contains an oxide semiconductor; A first insulating layer and a second insulating layer. The first insulating layer is located between the second gate and the second active layer, the second insulating layer is located between the third gate and the second active layer, and the thickness of the first insulating layer is less than the thickness of the second insulating layer; A fourth insulating layer and a fifth insulating layer. The fourth insulating layer is located on a side of the third active layer away from the substrate and between the fourth gate and the third active layer, and the fifth insulating layer is located on a side of the third active layer facing the substrate; wherein, The concentration of oxygen element in the first insulating layer is less than the concentration of oxygen element in the second insulating layer; The concentration of oxygen element in the fourth insulating layer is less than the concentration of oxygen element in the fifth insulating layer.

17. The display panel according to claim 1, wherein The display panel includes a pixel circuit and a driving circuit for providing driving signals to the pixel circuit. Among them, the driving circuit includes the second transistor, the pixel circuit includes the third transistor or the driving circuit includes the third transistor, and the pixel circuit includes the first transistor or the driving circuit includes the first transistor.

18. A display device, characterized in that, Comprising the display panel according to any one of claims 1-17.

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