Semiconductor light-emitting element and display device

Abstract

The semiconductor light-emitting element includes: a light-emitting layer; a passivation layer surrounding the light emitting layer; a first non-uniform region under the light emitting layer; a first electrode including a second non-uniform region located below the first non-uniform region; and a second electrode disposed on the light emitting layer. The first non-uniform region includes a plurality of first intaglio patterns and a plurality of first protrusions respectively disposed on the plurality of first intaglio patterns. The second non-uniform region includes a plurality of second intaglio patterns and a plurality of second protrusions respectively disposed on the plurality of second intaglio patterns. The shapes of the plurality of second intaglio patterns respectively correspond to the shapes of the plurality of first intaglio patterns. The shapes of the plurality of second protrusions correspond to the shapes of the plurality of first protrusions.

Description

Technical Field

[0001] The embodiments relate to semiconductor light-emitting elements and display devices. Background Art

[0002] Large-area displays include liquid crystal displays (LCDs), OLED displays, and micro-LED displays (Micro-LED displays).

[0003] A micro-LED display is a display that uses a semiconductor light-emitting element, i.e., a micro-LED, having a diameter or cross-sectional area of 100 μm or less as a display element.

[0004] Since a micro-LED display uses a semiconductor light-emitting element, i.e., a micro-LED, as a display element, it has excellent performance in many characteristics such as contrast ratio, response speed, color reproducibility, viewing angle, brightness, resolution, lifespan, luminous efficiency, or luminance.

[0005] In particular, a micro-LED display can separate and combine images in a modular manner, so it has the advantages of freely adjusting the size or resolution and can implement a flexible display.

[0006] However, a large-sized micro-LED display requires millions or more micro-LEDs, so there is a technical problem in that it is difficult to transfer micro-LEDs to a display panel quickly and accurately.

[0007] Transfer technologies developed in recent years include a pick-and-place process, a laser lift-off method, or a self-assembly method.

[0008] Among them, the self-assembly method is a method in which semiconductor light-emitting elements move forward to an assembly position by themselves in a fluid, and is a method suitable for implementing a large-screen display device.

[0009] However, there has been no research on a technology for manufacturing a display by self-assembly of micro-LEDs.

[0010] In particular, in the prior art, when transferring millions or more semiconductor light-emitting elements quickly onto a large display, the transfer speed can be increased, but the transfer error rate may increase, resulting in a technical problem of a decrease in transfer yield.

[0011] In the related art, an attempt was made to perform a transfer process of a self-assembly method using dielectrophoresis (DEP), but the self-assembly rate decreased due to the non-uniformity of the DEP force and the like.

[0012] On the other hand, the size (or diameter) of the micro-LED is very small, so the area where the electrode provided on the lower side is in contact with the semiconductor layer is very small. That is, the contact area between the semiconductor layer and the electrode is very small, which directly leads to an increase in surface resistance and causes a problem of deterioration of electrical characteristics.

[0013] In addition, the lower surface of the semiconductor layer of the micro-LED has a straight plane, and an electrode is provided on the straight plane. Therefore, the light traveling downward toward the electrode is absorbed by the electrode, resulting in a problem of a decrease in luminous efficiency.

[0014] In addition, in the self-assembly method, the semiconductor light-emitting element moving onto the backplane substrate 300A is assembled to a specific side of the backplane substrate 300A by using the DEP force. In order to better assemble the semiconductor light-emitting element, a large DEP force is required. In particular, in the case of a super-small LED such as a micro-LED, only when the DEP force is larger can the assembly rate of the micro-LED be increased, but there is a problem of an increase in power consumption.

[0015] In addition, the micro-LED is assembled to the backplane substrate 300A, and during the formation of an electrical connection through a subsequent process, the micro-LED is fixed by the DEP force. However, fixing the micro-LED to the backplane substrate 300A by the DEP force is limited, and there is a problem that the micro-LED detaches from the backplane substrate 300A when performing various processes for electrical connection.

[0016] At the same time, when the micro-LED is circular, even if it is assembled to the backplane substrate 300A, it is not fixed and rotates at any time. Therefore, the micro-LED is not fixed to the correct position, and poor electrical connection occurs due to misalignment or the like, resulting in a problem of poor lighting. SUMMARY OF THE INVENTION

[0017] TECHNICAL PROBLEM

[0018] An object of an embodiment is to solve the above problems and other problems.

[0019] Another object of the embodiment is to provide a semiconductor light-emitting element capable of improving electrical characteristics.

[0020] In addition, another object of the embodiment is to provide a semiconductor light-emitting element capable of improving luminous efficiency.

[0021] In addition, another object of the embodiment is to provide a semiconductor light-emitting element capable of improving the assembly rate and reducing the power consumption for self-assembly.

[0022] In addition, another object of the embodiment is to provide a display device capable of strengthening the fixing property of the semiconductor light-emitting element.

[0023] Meanwhile, another object of the embodiment is to provide a display device including a semiconductor light-emitting element that can be assembled to the correct position.

[0024] The technical problems of the embodiment are not limited to this, and also include problems that can be grasped through the description of the invention.

[0025] Means for Solving the Problems

[0026] To achieve the above or other objects, a semiconductor light-emitting element according to one aspect of the embodiment includes: a light-emitting layer; a passivation layer surrounding the light-emitting layer; a first non-uniform region located below the light-emitting layer; a first electrode including a second non-uniform region located below the first non-uniform region; and a second electrode located on the light-emitting layer. The first non-uniform region includes a plurality of first etched patterns and a plurality of first protrusions respectively disposed on the plurality of first etched patterns. The second non-uniform region includes a plurality of second etched patterns and a plurality of second protrusions respectively disposed on the plurality of second etched patterns. The plurality of second etched patterns respectively have shapes corresponding to the shapes of the plurality of first etched patterns, and the plurality of second protrusions respectively have shapes corresponding to the shapes of the plurality of first protrusions.

[0027] The first etched pattern and the second etched pattern are respectively formed in a ring shape around the first protrusion and the second protrusion.

[0028] The light-emitting layer includes: a first conductive-type semiconductor layer; an active layer formed on the first conductive-type semiconductor layer; and a second conductive-type semiconductor layer formed on the active layer. The first conductive-type semiconductor layer has a thickness of 70% or more of the overall thickness of the light-emitting layer.

[0029] The height of the first protrusion is 20% to 70% of the thickness of the first conductive-type semiconductor layer.

[0030] The first electrode includes a plurality of metal layers, and the plurality of metal layers at least include an ohmic contact layer and a magnetic layer. The plurality of metal layers respectively have a thickness of 50 nm or less.

[0031] The semiconductor light-emitting element includes a first uniform region below the light-emitting layer, and the first electrode includes a second uniform region, and the shape of the second uniform region corresponds to the shape of the first uniform region.

[0032] The above-mentioned second non-uniform region includes: a 2-1 non-uniform region located below the first light-emitting region of the above-mentioned light-emitting layer; and a 2-2 non-uniform region located below the second light-emitting region of the above-mentioned light-emitting layer, and the above-mentioned second uniform region is located between the above-mentioned 2-1 non-uniform region and the above-mentioned 2-2 non-uniform region.

[0033] The above-mentioned second uniform region includes: a 2-1 uniform region located below the first light-emitting region of the above-mentioned light-emitting layer; and a 2-2 uniform region located below the second light-emitting region of the above-mentioned light-emitting layer, and the above-mentioned second non-uniform region is located between the above-mentioned 2-1 uniform region and the above-mentioned 2-2 uniform region.

[0034] The above-mentioned first uniform region and the above-mentioned first non-uniform region are part of the above-mentioned first conductive semiconductor layer.

[0035] The above-mentioned first uniform region has a first groove formed on the lower surface of the above-mentioned first conductive semiconductor layer, and the above-mentioned second uniform region has a second groove corresponding to the above-mentioned first groove.

[0036] The surface of the above-mentioned first uniform region and the bottom of the above-mentioned first etching pattern are on the same horizontal line.

[0037] According to another aspect of the embodiment, the display device includes: a backplane substrate; the above-mentioned semiconductor light-emitting element formed on the above-mentioned backplane substrate; a fixing member located between the above-mentioned backplane substrate and the above-mentioned semiconductor light-emitting element; a connection electrode provided on the side of the above-mentioned semiconductor light-emitting element; and an electrode wiring provided on the upper side of the above-mentioned semiconductor light-emitting element, and the above-mentioned connection electrode is connected to at least one set of assembly lines among the first set of assembly lines or the second set of assembly lines of the above-mentioned backplane substrate.

[0038] The above-mentioned fixing member is disposed in the above-mentioned second groove.

[0039] The above-mentioned fixing member is disposed in a plurality of the above-mentioned second etching patterns of the above-mentioned first electrode.

[0040] Advantages of the Invention

[0041] As Figure 7 、 Figure 26 and Figure 32 shown, the first electrode 154 disposed on the lower side of the semiconductor light-emitting elements 150A, 150B, 150C includes a second non-uniform region 156. The second non-uniform region 156 includes a plurality of second etching patterns 156a and a plurality of second protrusions 156b. At this time, the plurality of second protrusions 156b are respectively disposed in the plurality of second etching patterns 156a.

[0042] According to an embodiment, the first electrode 154 includes a second non-uniform region 156 having a plurality of second etched patterns 156a and a plurality of second protrusions 156b. Accordingly, the contact area between the first electrode 154 and the light-emitting layer 150a is significantly increased, improving electrical characteristics. In addition, during self-assembly, the area of the magnetic layer included in the first electrode 154 is increased, improving the assembly rate. As a result, the DEP force for self-assembly becomes larger, so that a low voltage can be applied and power consumption can be reduced.

[0043] According to an embodiment, the first electrode 154 includes a second non-uniform region 156 having a plurality of second etched patterns 156a and a plurality of second protrusions 156b. Accordingly, light generated by the light-emitting layer 150a is diffused through the second non-uniform region 156 including the plurality of second etched patterns 156a and the plurality of second protrusions 156b, thereby improving light-emitting efficiency.

[0044] On the other hand, as Figure 26 and Figure 32 shown, the first electrode 154 disposed below the semiconductor light-emitting elements 150B and 150C includes a second uniform region 156' having a second groove 159b. Accordingly, as Figure 41 and Figure 44 shown, the semiconductor light-emitting elements 150B and 150C are assembled and fixed by the fixing member 390. At this time, the fixing member 390 is disposed in the second groove 159b of the second uniform region 156', and the contact area between the fixing member 390 and the semiconductor light-emitting elements 150B and 150C can be maximized. Accordingly, through the fixing member 390, the semiconductor light-emitting elements 150B and 150C are more firmly fixed to the first insulating layer 330, and thus the fixing property of the semiconductor light-emitting elements 150B and 150C can be further strengthened.

[0045] On the other hand, as Figure 28 and Figure 29As shown, even when the circular semiconductor light-emitting element 150B is assembled into the assembly hole 340H of the backplane substrate 300A while being rotated at a specified angle in the correct position, the semiconductor light-emitting element 150B can be assembled into the correct position by self-alignment such that the first electrode 154 overlaps with the first set of assembly lines 321 and the second set of assembly lines 322 in the 2-1 non-uniform region 156-1 and the 2-2 non-uniform region 156-2, which are on both sides of the second uniform region 156′, respectively. For example, when the 2-1 non-uniform region 156-1 and the 2-2 non-uniform region 156-2, which are on both sides of the second uniform region 156′, are respectively aligned with the first set of assembly lines 321 and the second set of assembly lines 322, it becomes an alignment set to the correct position of the semiconductor light-emitting element 150B. In such a case, if the semiconductor light-emitting element 150B is not assembled into the correct position of the assembly hole 340H, there is no need to perform an additional alignment process for assembling into the correct position, thereby preventing problems caused by misalignment, that is, poor electrical connection due to misalignment.

[0046] The additional scope of applicable embodiments can be clearly understood from the following detailed description. However, those skilled in the art can clearly understand various changes and modifications within the spirit and scope of the embodiments. Therefore, the detailed description and specific embodiments such as the preferred embodiments are merely illustrative. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 Shows the living room of a house in which a display device according to an embodiment is disposed.

[0048] Figure 2 Is a block diagram schematically showing a display device according to an embodiment.

[0049] Figure 3 Shows Figure 2 An example of a circuit diagram of a pixel of

[0050] Figure 4 Is Figure 1 An enlarged view of a first panel area of a display device of

[0051] Figure 5 Is Figure 4 An enlarged view of area A2 of

[0052] Figure 6 Is a diagram showing an example in which a light-emitting element according to an embodiment is assembled onto a substrate by a self-assembly method.

[0053] Figure 7 Is a cross-sectional view showing a semiconductor light-emitting element according to a first embodiment.

[0054] Figure 8It is a bottom view observed in a state where the first electrode 154 is removed from the semiconductor light-emitting element of the first embodiment.

[0055] Figures 9 to 17 It shows a manufacturing method of the semiconductor light-emitting element of the first embodiment.

[0056] Figure 18 It is a cross-sectional view showing the display device of the first embodiment.

[0057] Figure 19 It is a cross-sectional view showing the backplane substrate 300A of the embodiment.

[0058] Figures 20a to 25 It shows a manufacturing method of the display device of the first embodiment.

[0059] Figure 26 It is a cross-sectional view showing the semiconductor light-emitting element of the second embodiment.

[0060] Figure 27 It is a bottom view observed in a state where the first electrode 154 is removed from the semiconductor light-emitting element of the second embodiment.

[0061] Figure 28 and Figure 29 It is a view showing a state where the semiconductor light-emitting element performs self-alignment during self-assembly.

[0062] Figure 30 It shows the DEP force reflecting the shape of the lower side of the semiconductor light-emitting element during self-assembly.

[0063] Figures 31 to 40 It shows a manufacturing method of the semiconductor light-emitting element of the second embodiment.

[0064] Figure 41 It is a cross-sectional view showing the display device of the second embodiment.

[0065] Figure 42 It is a cross-sectional view showing the semiconductor light-emitting element of the third embodiment.

[0066] Figure 43 It is a bottom view observed in a state where the first electrode 154 is removed from the semiconductor light-emitting element of the third embodiment.

[0067] Figure 44 It is a cross-sectional view showing the display device of the third embodiment.

[0068] The sizes, shapes, numerical values, etc. of the constituent elements illustrated in the drawings may differ from the actual situation. Additionally, even if the same constituent elements are illustrated as having different sizes, shapes, numerical values, etc. between the drawings, this is merely an example on the drawings, and the same constituent elements may have the same sizes, shapes, numerical values, etc. between the drawings. Detailed Description of the Invention

[0069] Hereinafter, with reference to the drawings, the embodiments disclosed in this specification will be described in detail. Irrespective of the drawing numbers, the same or similar constituent elements are given the same reference numerals, and redundant descriptions thereof are omitted. The suffixes'module' and 'unit' used for the constituent elements in the following description are given or mixed for the convenience of writing the specification, and they do not have a meaning or function of distinguishing from each other. In addition, the drawings are used to assist in understanding the embodiments disclosed in this specification, and the technical ideas disclosed in this specification are not limited to the content in the drawings. Further, when referring to an element such as a layer, region, or substrate as being 'on' another constituent element, this means that it is directly on the other element or there are other intermediate elements in between.

[0070] The display devices described in this specification include TVs, in-vehicle display screens, mobile terminals such as mobile phones or smart phones, computer monitors such as laptop computers or desktop computers, automotive HUDs (head-Up Displays), backlight units for displays, XR (Extend Reality: Extended Reality) displays such as AR, VR, MR (Mixed Reality), light sources, etc. However, even for newly developed product forms in the future, the structures of the embodiments described in this specification can also be equally applicable to displayable devices.

[0071] Figure 1 The living room of a house showing a display device configured with an embodiment is shown.

[0072] Refer to Figure 1 , the display device 100 of the embodiment can display the states of various electronic products such as a washing machine 101, a robotic vacuum cleaner 102, an air purifier 103, etc., can communicate with each electronic product based on IOT, and can also control each electronic product based on the set data of the user.

[0073] The display device 100 of the embodiment includes a flexible display disposed on a thin and flexible substrate. While maintaining the characteristics of a conventional flat panel display, the flexible display can also be bent or rolled up like paper.

[0074] The time information in the flexible display is presented by independently controlling the emission of unit pixels arranged in a matrix. A unit pixel refers to the smallest unit for presenting one color. The unit pixels of the flexible display can be presented by light-emitting elements. In an embodiment, the light-emitting element can be a micro-LED or a nano-LED, but is not limited thereto.

[0075] Figure 2 is a block diagram schematically showing a display device according to an embodiment, Figure 3 shows Figure 2 a circuit diagram of an example of the pixel of.

[0076] Referring to Figure 2 and Figure 3 , the display device according to the embodiment includes a display panel 10, a driving circuit 20, a scan driving unit 30, and a power supply circuit 50.

[0077] The display device 100 according to the embodiment drives the light-emitting elements by an active matrix (AM) method or a passive matrix (PM) method.

[0078] The driving circuit 20 includes a data driving unit 21 and a timing control unit 22.

[0079] The display panel 10 can be configured as a right-angled quadrilateral, but is not limited thereto. That is, the display panel 10 can be formed into a circular or elliptical shape. At least one side of the display panel 10 is bent with a specified curvature.

[0080] The display panel includes a display area DA. The display area DA is an area where pixels PX are formed to display an image. The display panel includes a non-display area NDA. The non-display area DNA can be an area other than the display area DA.

[0081] As an example, the display area DA and the non-display area NDA are defined on the same surface. For example, the non-display area DNA surrounds the display area DA on the same surface as the display area DA, but is not limited thereto.

[0082] As another example, although not shown in the drawings, the display area DA and the non-display area NDA can be defined on different surfaces. For example, the display area DA is defined on the upper surface of the substrate, and the non-display area NDA is defined on the lower surface of the substrate. For example, the non-display area NDA can also be defined on the entire area or a partial area of the lower surface of the substrate.

[0083] On the other hand, although it is illustrated in the drawings by distinguishing between a display area DA and a non-display area NDA, it is also possible not to distinguish between the display area DA and the non-display area NDA. That is, only the display area DA can be formed on the upper surface of the substrate, and the non-display area NDA is not formed. In other words, the entire area of the upper surface of the substrate is the display area DA for displaying an image, and the non-display area NDA, that is, the border area, may not exist.

[0084] The display panel 10 includes data lines (D1 to Dm, where m is an integer of 2 or more), scan lines (S1 to Sn, where n is an integer of 2 or more) intersecting the data lines (D1 to Dm), a high-potential voltage line VDDL for supplying a high-potential voltage VDD, a low-potential voltage line VSSL for supplying a low-potential voltage VSS, and pixels PX connected to the data lines (D1 to Dm) and the scan lines (S1 to Sn).

[0085] Each pixel PX includes a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 emits first-color light having a first main wavelength, the second sub-pixel PX2 emits second-color light having a second main wavelength, and the third sub-pixel PX3 emits third-color light having a third main wavelength. The first-color light may be red light, the second-color light may be green light, and the third-color light may be blue light, but is not limited thereto. In addition, Figure 2 The case where each pixel PX includes 3 sub-pixels is illustrated, but is not limited thereto. That is, each pixel PX may include 4 or more sub-pixels.

[0086] The first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 are respectively connected to at least one of the data lines (D1 to Dm), at least one of the scan lines (S1 to Sn), and the high-potential voltage line VDDL. As Figure 3 shown, the first sub-pixel PX1 includes a light-emitting element LD, a plurality of transistors for supplying current to the light-emitting element LD, and at least one capacitor Cst.

[0087] Although not illustrated, each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 may also include only one light-emitting element LD and at least one capacitor Cst.

[0088] The light-emitting elements LD are semiconductor light-emitting diodes each including a first electrode 154, a plurality of conductive-type semiconductor layers, and a second electrode 155. Here, the first electrode 154 may be an anode electrode, and the second electrode 155 may be a cathode electrode, but is not limited thereto.

[0089] The light-emitting element LD may be one of a horizontal-type light-emitting element, a flip-chip type light-emitting element, and a vertical-type light-emitting element.

[0090] AsFigure 3 As shown, a plurality of transistors include a driving transistor DT that supplies current to a light-emitting element LD, and a scanning transistor ST that supplies a data voltage to the gate of the driving transistor DT. The driving transistor DT includes a gate connected to the source of the scanning transistor ST, a source connected to a high-potential voltage line VDDL to which a high-potential voltage VDD is applied, and a drain connected to a first electrode 154 of the light-emitting element LD. The scanning transistor ST includes a gate connected to a scanning line (Sk, where k is an integer satisfying 1 ≤ k ≤ n), a source connected to the gate of the driving transistor DT, and a drain connected to a data line (Dj, where j is an integer satisfying 1 ≤ j ≤ m).

[0091] A capacitor Cst is formed between the gate and the source of the driving transistor DT. The storage capacitor Cst charges the difference between the gate voltage and the source voltage of the driving transistor DT.

[0092] The driving transistor DT and the scanning transistor ST are formed of thin film transistors. Additionally, Figure 3 the case where the driving transistor DT and the scanning transistor ST are formed of P-type MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) is described in detail, but the present invention is not limited thereto. The driving transistor DT and the scanning transistor ST may also be formed of N-type MOSFETs. In this case, the positions of the source and the drain of the driving transistor DT and the scanning transistor ST may be changed.

[0093] Additionally, Figure 3 the case where the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 each include a 2T1C (2 transistors - 1 capacitor) having one driving transistor DT, one scanning transistor ST, and one capacitor Cst is illustrated, but the present invention is not limited thereto. The first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 each include a plurality of scanning transistors ST and a plurality of capacitors Cst.

[0094] The second sub-pixel PX2 and the third sub-pixel PX3 are represented by substantially the same circuit diagram as the first sub-pixel PX1, and thus detailed description thereof is omitted.

[0095] The driving circuit 20 outputs signals and voltages for driving the display panel 10. For this purpose, the driving circuit 20 includes a data driving unit 21 and a timing control unit 22.

[0096] The data driving unit 21 receives digital video data DATA and a source control signal DCS from the timing control unit 22. The data driving unit 21 converts the digital video data DATA into an analog data voltage according to the source control signal DCS and supplies it to the data lines (D1 to Dm) of the display panel 10.

[0097] The timing control unit 22 receives digital video data DATA and a timing signal from the host system. The host system may be an application processor of a smart phone or a tablet PC, a monitor, a system-on-chip of a TV, etc.

[0098] The timing control unit 22 generates control signals for controlling the operation timing of the data driving unit 21 and the scan driving unit 30. The control signals include a source control signal DCS for controlling the operation timing of the data driving unit 21 and a scan control signal SCS for controlling the operation timing of the scan driving unit 30.

[0099] The driving circuit 20 is disposed in a non-display area NDA provided on one side of the display panel 10. The driving circuit 20 is formed of an integrated circuit (IC) and is mounted on the display panel 10 by a COG (chip on glass) method, a COP (chip on plastic) method, or an ultrasonic bonding method, but the present invention is not limited thereto. For example, the driving circuit 20 may be mounted on a circuit board (not shown) instead of on the display panel 10.

[0100] The data driving unit 21 is mounted on the display panel 10 by a COG (chip on glass) method, a COP (chip on plastic) method, or an ultrasonic bonding method, and the timing control unit 22 is mounted on a circuit board.

[0101] The scan driving unit 30 receives a scan control signal SCS from the timing control unit 22. The scan driving unit 30 generates scan signals according to the scan control signal SCS and supplies them to the scan lines (S1 to Sn) of the display panel 10. The scan driving unit 30 includes a plurality of transistors and is formed in the non-display area NDA of the display panel 10. Alternatively, the scan driving unit 30 may be formed of an integrated circuit, and in this case, it may be mounted on a gate flexible film attached to the other side of the display panel 10.

[0102] The power supply circuit 50 generates voltages for driving the display panel 10 from the main power supply applied from the system board and supplies them to the display panel 10. For example, the power supply circuit 50 generates a high potential voltage VDD and a low potential voltage VSS for driving the light emitting elements LD of the display panel 10 from the main power supply and supplies them to the high potential voltage line VDDL and the low potential voltage line VSSL of the display panel 10. In addition, the power supply circuit 50 generates a driving voltage for driving the driving circuit 20 and the scan driving unit 30 from the main power supply and supplies it.

[0103] Figure 4 is Figure 3 An enlarged view of the first panel area in the display device.

[0104] Refer to Figure 4 , the display device 100 of the embodiment is manufactured by mechanically connecting and electrically connecting a plurality of panel areas such as the first panel area A1 by splicing.

[0105] The first panel area A1 includes a plurality of semiconductor light emitting elements 150 arranged according to each unit pixel ( Figure 2 PX).

[0106] Figure 5 is Figure 4 An enlarged view of the A2 area.

[0107] Refer to Figure 5 , the display device 100 of the embodiment may include a substrate 200, assembly lines 201, 202, an insulating layer 206, and a plurality of semiconductor light emitting elements 150. It may also include more components.

[0108] The assembly lines include a first assembly line 201 and a second assembly line 202 spaced apart from each other. The first assembly line 201 and the second assembly line 202 are used to generate a DEP force (DEP force) to assemble the semiconductor light emitting elements 150. For example, the semiconductor light emitting element 150 may be one of a horizontal semiconductor light emitting element, a flip chip type semiconductor light emitting element, and a vertical semiconductor light emitting element.

[0109] The semiconductor light emitting elements 150 each include a red semiconductor light emitting element 150, a green semiconductor light emitting element 150G, and a blue semiconductor light emitting element 150B0 in order to form a unit pixel, but are not limited thereto, and include red phosphors and green phosphors to respectively display red and green.

[0110] The substrate 200 is a supporting member for supporting the components arranged on the substrate 200 or a protecting member for protecting the components.

[0111] The substrate 200 is a rigid substrate or a flexible substrate. The substrate 200 is formed of sapphire, glass, silicon, or polyimide. Additionally, the substrate 200 includes materials with flexibility such as PEN (Polyethylene Naphthalate) and PET (Polyethylene Terephthalate). Additionally, the substrate 200 may be a transparent material, but is not limited thereto. The substrate 200 can be used as a support substrate on a display panel and can be used as an assembly substrate when self-assembling light-emitting elements.

[0112] The substrate 200 is Figure 2 and Figure 3 The circuits within the sub-pixels PX1, PX2, and PX3 shown, for example, are a backplane having transistors ST, DT, capacitors Cst, signal wirings, etc., but are not limited thereto.

[0113] The insulating layer 206 includes organic material with insulating and flexible properties such as polyimide, PAC, PEN, PET, polymers, etc., or inorganic materials such as silicon dioxide (SiO2) or silicon nitride-based (SiN x ) etc., and is integrally formed with the substrate 200 to form a single substrate.

[0114] The insulating layer 206 is a conductive adhesive layer having adhesiveness and conductivity. The conductive adhesive layer has flexibility to achieve the flexible function of the display device. For example, the insulating layer 206 is an anisotropic conductive film (ACF), an anisotropic conductive medium, a solution containing conductive particles, etc. The conductive adhesive layer is a layer having electrical conductivity in the vertical direction relative to the thickness or electrical insulation in the horizontal direction relative to the thickness.

[0115] The insulating layer 206 includes assembly holes 203, into which the semiconductor light-emitting element 150 is inserted. Therefore, during self-assembly, the semiconductor light-emitting element 150 can be easily inserted into the assembly holes 203 of the insulating layer 206. The assembly holes 203 can be referred to as insertion holes, fixing holes, alignment holes, etc. The assembly holes 203 can be referred to as holes.

[0116] The assembly holes 203 can be referred to as holes, grooves, trenches, recesses, pockets, etc.

[0117] The assembly holes 203 vary according to the shape of the semiconductor light-emitting element 150. For example, a red semiconductor light-emitting element, a green semiconductor light-emitting element, and a blue semiconductor light-emitting element each have a different shape, and the assembly holes 203 are formed in shapes corresponding to the shapes of these semiconductor light-emitting elements respectively. For example, the assembly holes 203 include a first assembly hole for assembling the red semiconductor light-emitting element, a second assembly hole for assembling the green semiconductor light-emitting element, and a third assembly hole for assembling the blue semiconductor light-emitting element. For example, the red semiconductor light-emitting element has a circular shape, the green semiconductor light-emitting element is formed as a first ellipse having a first minor axis and a first major axis, and the blue semiconductor light-emitting element is formed as a second ellipse having a second minor axis and a second major axis, but this is not limited thereto. The second major axis of the ellipse of the blue semiconductor light-emitting element is larger than the first major axis of the ellipse of the green semiconductor light-emitting element, and the second minor axis of the ellipse of the blue semiconductor light-emitting element is smaller than the first minor axis of the ellipse of the green semiconductor light-emitting element.

[0118] On the other hand, the method of mounting the semiconductor light-emitting element 150 on the substrate 200 is, for example, a self-assembly method ( Figure 6 ), a transfer method, etc.

[0119] Figure 6 FIG. is an example showing the light-emitting element of the embodiment assembled to the substrate by the self-assembly method.

[0120] Based on Figure 6 An example of assembling the semiconductor light-emitting element of the embodiment to the display panel by the self-assembly method using an electromagnetic field will be described.

[0121] The assembly substrate 200 described later can also be used as the panel substrate 200a in the display device after being assembled to the light-emitting element, but the embodiment is not limited thereto.

[0122] Referring to Figure 6 , the semiconductor light-emitting element 150 is put into the cavity 1300 filled with the fluid 1200, and the semiconductor light-emitting element 150 moves toward the assembly substrate 200 by means of the magnetic field generated from the assembly device 1100. At this time, the light-emitting element 150 adjacent to the assembly hole 207H of the assembly substrate 200 is assembled to the assembly hole 207H by the DEP force generated by the electric field of the assembly line. The fluid 1200 may be ultrapure water or the like, but is not limited thereto. The cavity may be referred to as a water tank, a box, a container, etc.

[0123] After the semiconductor light-emitting element 150 is put into the cavity 1300, the assembly substrate 200 may be disposed on the cavity 1300. According to the embodiment, the assembly substrate 200 is put into the cavity 1300.

[0124] On the other hand, the first set of assembly lines 201 and the second set of assembly lines 202 form an electric field when an alternating voltage is applied, and the semiconductor light-emitting element 150 inserted into the assembly hole 207H is fixed by the DEP force generated by this electric field. The interval between the first set of assembly lines 201 and the second set of assembly lines 202 is smaller than the width of the semiconductor light-emitting element 150 and the width of the assembly hole 207H, and the assembly position of the semiconductor light-emitting element 150 using the electric field can be fixed more tightly.

[0125] An insulating layer 215 is formed on the first set of assembly lines 201 and the second set of assembly lines 202 to protect the first set of assembly lines 201 and the second set of assembly lines 202 in the fluid 1200 and prevent leakage of the current flowing through the first set of assembly lines 201 and the second set of assembly lines 202. For example, an inorganic insulator such as silicon dioxide or aluminum oxide or an organic insulator is formed on the insulating layer 215 in a single layer or multiple layers. When assembling the semiconductor light-emitting element 150, the insulating layer 215 has a minimum thickness for preventing damage to the first set of assembly lines 201 and the second set of assembly lines 202, and may have a maximum thickness for stably assembling the semiconductor light-emitting element 150.

[0126] A partition wall 207 is formed on the upper part of the insulating layer 215. A part of the area of the partition wall 207 is located above the first set of assembly lines 201 and the second set of assembly lines 202, and the remaining area is located above the assembly substrate 200.

[0127] On the other hand, when manufacturing the assembly substrate 200, a part of the partition wall 340 formed on the upper part of the insulating layer 215 is removed, thereby forming the assembly hole 207H for respectively bonding and assembling the semiconductor light-emitting element 150 to the assembly substrate 200.

[0128] An assembly hole 207H for bonding the semiconductor light-emitting element 150 is formed on the assembly substrate 200, and the surface on which the assembly hole 207H is formed is in contact with the fluid 1200. The assembly hole 207H guides the semiconductor light-emitting element 150 to be assembled to the correct position.

[0129] On the other hand, the assembly hole 207H has a shape and size corresponding to the shape of the semiconductor light-emitting element 150 assembled to the corresponding position. Thereby, it is possible to prevent other semiconductor light-emitting elements from being assembled in the assembly hole 207H or multiple semiconductor light-emitting elements from being assembled.

[0130] Refer back to Figure 6 , the assembly device 1100 that applies a magnetic field after the assembly substrate 200 is disposed in the cavity moves along with the assembly substrate 200. The assembly device 1100 is a permanent magnet or an electromagnet.

[0131] The assembling device 1100 moves in a state of being in contact with the assembling substrate 200 in order to maximize the region generating the magnetic field within the fluid 1200. According to an embodiment, the assembling device 1100 includes a plurality of magnetic bodies or a magnetic body having a size corresponding to the assembling substrate 200. In this case, the moving distance of the assembling device 1100 can be restricted within a specified range.

[0132] Due to the magnetic field generated by the assembling device 1100, the semiconductor light-emitting element 150 within the cavity 1300 moves towards the assembling device 1100 and the assembling substrate 200.

[0133] During the process of the semiconductor light-emitting element 150 moving towards the assembling device 1100, it enters the assembling hole 207H through the DEP force formed by the electric field between the assembling lines 201 and 202 and is fixed.

[0134] Specifically, the first assembling line 201 and the second assembling line 202 form an electric field through an AC power supply, and through this electric field, a DEP force is formed between the assembling lines 201 and 202. The semiconductor light-emitting element 150 is fixed to the assembling hole 207H on the assembling substrate 200 through this DEP force.

[0135] At this time, a specified solder layer (not shown) is formed between the light-emitting element 150 assembled to the assembling hole 207H of the assembling substrate 200 and the assembling lines 201 and 202, thereby enhancing the bonding force of the light-emitting element 150.

[0136] In addition, a molding layer (not shown) is formed in the assembling hole 207H of the assembling substrate 200 after assembly. The molding layer is a transparent resin layer or a resin layer including a reflective substance and a scattering substance.

[0137] By using the above self-assembly method of the electromagnetic field, the time required to separately assemble semiconductor light-emitting elements to the substrate can be drastically shortened. Therefore, a large-area high pixel display can be realized quickly and economically.

[0138] Next, with reference to Figures 7 to 44 various embodiments for solving the above problems will be described. Regarding the descriptions omitted below, they can be easily understood based on Figures 1 to 6 and the above descriptions made with respect to this figure.

[0139] [First Embodiment]

[0140] Figure 7 It is a cross-sectional view showing a semiconductor light-emitting element of the first embodiment. Figure 8 It is a bottom view observed in a state where the first electrode 154 is removed from the semiconductor light-emitting element of the first embodiment.

[0141] With reference to Figure 7 and Figure 8, the semiconductor light-emitting element 150A of the first embodiment includes a light-emitting layer 150a, a passivation layer 157, a first electrode 154, and a second electrode 155.

[0142] The semiconductor light-emitting element 150A of the first embodiment may be a semiconductor light-emitting element that emits different color lights ([ Figure 4 150R, 150G, 150B). The semiconductor light-emitting element 150A of the first embodiment may be a vertical semiconductor light-emitting element in which current flows vertically in the light-emitting layer 150a, but it is not limited thereto.

[0143] The light-emitting layer 150a includes a plurality of semiconductor layers and generates a specific color light. For example, the light-emitting layer 150a includes at least one first conductive-type semiconductor layer 151, an active layer 152, and at least one second conductive-type semiconductor layer 153. The active layer 152 is located between the first conductive-type semiconductor layer 151 and the second conductive-type semiconductor layer 153. For example, the first conductive-type semiconductor layer 151 includes an n-type dopant, and the second conductive-type semiconductor layer 153 includes a p-type dopant, but it is not limited thereto.

[0144] The passivation layer 157 surrounds the light-emitting layer 150a. The passivation layer 157 is disposed on the upper side while surrounding the side portions of the light-emitting layer 150a. For example, the passivation layer 157 is not disposed on the upper side of the light-emitting layer 150a, whereby the upper side of the light-emitting layer 150a can be exposed.

[0145] The first electrode 154 is disposed on the lower side of the light-emitting layer 150a, and the second electrode 155 is disposed on the upper side of the light-emitting layer 150a. For example, the first electrode 154 is a cathode electrode, and the second electrode 155 is an anode electrode. Current flows from the second electrode 155 through the light-emitting layer 150a to the first electrode 154, and light having a brightness corresponding to the current is generated on the light-emitting layer 150a.

[0146] The first electrode 154 is formed of an opaque metal, and the second electrode 155 is formed of a transparent conductive material. The first electrode 154 has a multilayer structure. For example, the first electrode 154 includes an ohmic contact layer, a magnetic layer, an electrode layer, a bonding layer, an oxidation prevention layer, etc. The second electrode 155 may further have a multilayer structure of at least one layer or more on the basis of a conductive layer made of a conductive material, but it is not limited thereto.

[0147] On the other hand, the semiconductor light-emitting element 150A of the first embodiment includes a first non-uniform region 158. The first non-uniform region 158 is a region in which the lower side of the light-emitting layer 150a is formed into an uneven surface. To this end, the lower side of the light-emitting layer 150a is processed to form the first non-uniform region 158.

[0148] The first non-uniform region 158 includes a plurality of first engraved patterns 158a and a plurality of first protrusions 158b. The first protrusions 158b are located in the first engraved patterns 158a.

[0149] The first engraved pattern 158a refers to a pattern that is recessed from the lower side of the light-emitting layer 150a into its interior. For example, the first engraved pattern 158a is formed on the lower surface of the first conductive-type semiconductor layer 151 of the light-emitting layer 150a. That is, the lower surface of the first conductive-type semiconductor layer 151 is removed, thereby forming the first engraved pattern 158a that is recessed from the lower surface of the first conductive-type semiconductor layer 151 into its interior.

[0150] The plurality of first engraved patterns 158a are spaced apart from each other or are in contact with each other. When the plurality of first engraved patterns 158a are spaced apart from each other, the region between the first engraved patterns 158a is the lower surface of the first conductive-type semiconductor layer 151.

[0151] The first engraved pattern 158a has a ring shape around the first protrusion 158b. That is, an engraved pattern is formed along the periphery of the first protrusion 158b, thereby forming the first engraved pattern 158a having a ring shape.

[0152] The first protrusion 158b is formed in the first engraved pattern 158a formed in this way. The first engraved pattern 158a is formed along the periphery of the first protrusion 158b. For example, on the lower surface of the first conductive-type semiconductor layer 151, the first region corresponding to the first protrusion 158b is not removed, and the second region around the first region is removed, so that the non-removed first region is formed as the first protrusion 158b, and the removed second region is formed as the first engraved pattern 158a.

[0153] The first protrusion 158b has a first peak P1 at its lowest point. The first peak P1 of the first protrusion 158b is on the same horizontal line as the lower surface of the first conductive-type semiconductor layer 151. Relatively more is removed near the lower surface of the first conductive-type semiconductor layer 151, and relatively less is removed as it enters the interior of the first conductive-type semiconductor layer 151. Thus, the first engraved pattern 158a has a maximum width W1 on the lower surface of the first conductive-type semiconductor layer 151, and the width decreases as it enters the interior of the first conductive-type semiconductor layer 151. At the same time, the first protrusion 158b has a first peak P1 on the lower surface of the first conductive-type semiconductor layer 151, and its diameter increases as it enters the interior of the first conductive-type semiconductor layer 151. For example, the maximum diameter D1 of the first protrusion 158b and / or the maximum width W1 of the first engraved pattern 158a is 100 nm or less.

[0154] The first etched pattern 158a and the first protrusion 158b can be formed simultaneously, which will be described later. That is, an etching process is performed on the lower surface of the first-conductive-type semiconductor layer 151 to form a plurality of first etched patterns 158a, so that the first-conductive-type semiconductor layer remains without being removed within the first etched patterns 158a, thereby forming the first protrusions 158b.

[0155] On the other hand, the first electrode 154 includes a second non-uniform region 156. The second non-uniform region 156 is disposed below the first non-uniform region 158. The shape of the second non-uniform region 156 can reflect the shape of the first non-uniform region 158. That is, the shape of the second non-uniform region 156 corresponds to the shape of the first non-uniform region 158.

[0156] Since the first non-uniform region 158 includes a plurality of first etched patterns 158a and a plurality of first protrusions 158b, the second non-uniform region 156 includes a plurality of second etched patterns 156a and a plurality of second protrusions 156b. In such a case, the shapes of the plurality of second etched patterns 156a respectively correspond to the shapes of the plurality of first etched patterns 158a. The shapes of the plurality of second protrusions 156b respectively correspond to the shapes of the plurality of first protrusions 158b.

[0157] The second etched pattern 156a has a shape that is recessed into the interior of the light-emitting layer 150a. The second protrusion 156b is formed within the second etched pattern 156a. The second etched pattern 156a has a ring shape around the second protrusion 156b. That is, the second etched pattern 156a having a ring shape is formed along the periphery of the second protrusion 156b.

[0158] Since the second protrusion 156b is disposed on the first protrusion 158b, a second peak P2 is formed to have a shape corresponding to the shape of the first peak P1 of the first protrusion 158b.

[0159] On the other hand, in the embodiment, the greater the depth of the first etched pattern 158a or the height H1 of the first protrusion 158b in the first non-uniform region 158, the greater the contact area between the first electrode 154 and the light-emitting layer 150a. The greater the contact area, the smaller the surface resistance, and the electrical characteristics are improved.

[0160] The first non-uniform region 158 is formed in the first-conductivity-type semiconductor layer 151 or the second-conductivity-type semiconductor layer 153 of the light-emitting layer 150a. The first-conductivity-type semiconductor layer 151, being a semiconductor layer including an n-type dopant, has a very large thickness t1 compared to the thickness of the second-conductivity-type semiconductor layer 153. For example, the first-conductivity-type semiconductor layer 151 has a thickness t1 that is 70% or more of the overall thickness of the light-emitting layer 150a. Thus, the first etched pattern 158a or the first protrusion 158b of the first non-uniform region 158 is formed in the first-conductivity-type semiconductor layer 151.

[0161] On the other hand, the first electrode 154 has a very thin thickness t2. Additionally, because the height H1 of the first protrusion 158b or the depth of the first etched pattern 158a of the first non-uniform region 158 is very deep, the second etched pattern 156a and the second protrusion 156b are respectively formed corresponding to the first etched pattern 158a and the second protrusion 156b of the first non-uniform region 158.

[0162] For example, the height H1 of the first protrusion 158b is 20% to 70% of the thickness t1 of the first-conductivity-type semiconductor layer 151. As described above, since the thickness t1 of the first-conductivity-type semiconductor layer 151 is very thick, when taking 20% to 70% of the thickness t1 of the first-conductivity-type semiconductor layer 151 as the height H1 of the first protrusion 158b, the height H1 of the first protrusion 158b is also very high. The higher the height H1 of the first protrusion 158b, the deeper the depth of the first etched pattern 158a.

[0163] For example, the thickness t2 of the first electrode 154 is 30% or less of the height H1 of the first protrusion 158b. The height H1 of the first protrusion 158b is very high, while the thickness t2 of the first electrode 154 is very thin. Thus, when forming the second non-uniform region 156 of the first electrode 154 on the first non-uniform region 158, the second etched pattern 156a and the second protrusion 156b of the second non-uniform region 156 are respectively formed corresponding to the first etched pattern 158a and the first protrusion 158b of the first non-uniform region 158.

[0164] On the other hand, as described above, the first electrode 154 includes a plurality of metal layers including an ohmic contact layer, a magnetic layer, etc. In such a case, the plurality of metal layers each have a thickness of 50 nm or less and are formed to be very thin.

[0165] According to an embodiment, the first non-uniform region 158 is disposed below the light-emitting layer 150a, and the first electrode 154 including the second non-uniform region 156 located below the first non-uniform region 158 is disposed.

[0166] As a result, the contact area between the first electrode 154 and the light-emitting layer 150a is enlarged, thereby improving the electrical characteristics. In addition, light generated in the light-emitting layer 150a is diffused by the first non-uniform region 158, improving the light-emitting efficiency. In addition, during self-assembly, the area of the magnetic layer included in the first electrode 154 increases, improving the assembly rate, and the DEP force for self-assembly becomes larger, enabling a low voltage to be applied, thus reducing power consumption.

[0167] Figures 9 to 17 Disclosed is a method for manufacturing a semiconductor light-emitting device according to a first embodiment.

[0168] As Figure 9 shown, a light-emitting layer 150a is vapor-deposited on a growth substrate 410, a second electrode 155 is formed on the light-emitting layer 150a, and then a mesa etching process is performed to separate a plurality of light-emitting layers 150a in chip units. Thereafter, a passivation layer 157 is formed around the light-emitting layer 150a. The light-emitting layer 150a includes at least one first conductive-type semiconductor layer 151, an active layer 152 formed on the first conductive-type semiconductor layer 151, and at least one second conductive-type semiconductor layer 153 formed on the active layer 152.

[0169] As Figure 10 shown, the growth substrate 410 is bonded to a temporary substrate. That is, the passivation layer 157 on the growth substrate 410 is bonded to the sacrificial layer of the temporary substrate 420. The sacrificial layer is removed later and can be a metal or an organic substance. Thereafter, the growth substrate 410 is removed by an LLO process.

[0170] As Figure 11 shown, particles 440 are coated on the upper surface of the light-emitting layer 150a exposed by removing the growth substrate 410. The particles can be formed of a metal or a silicon-based material, but are not limited thereto. In the drawing, the particles 440 have a spherical shape, but can also have other shapes. In the drawing, the particles 440 are in contact with each other, but can also be such that the particles 440 are not in contact with each other or some of the particles 440 are in contact with each other while some of the particles 440 are not in contact with each other. The size of the particles 440 can be several nanometers or less.

[0171] As Figure 12 shown, a fixing film 450a is formed on the particles 440. The fixing film 450a includes inorganic substances such as SiO2 and SiN x but is not limited thereto. The fixing film 450a is formed between the particles 440 and under the particles 440 through the spaces between the particles 440. Through the fixing film 450a, the particles 440 are firmly fixed on the light-emitting layer 150a.

[0172] In the drawings, the fixed film 450a is shown as formed on the particles 440, but it is also possible that the fixed film 450a is not formed on the particles 440, whereby the particles 440 are exposed.

[0173] As Figure 13 shown, the fixed film 450a formed on the particles 440 is removed, and the particles 440 are also removed, so that the fixed film 450a formed below the particles 440 is formed into a pattern mask 450 corresponding to the shape of the particles 440. For example, the fixed film 450a is removed by dry etching, and the particles 440 are removed by wet etching, but this is not limited thereto.

[0174] The structure of the pattern mask 450 is such that a pattern is formed between the particles 440 and no pattern is formed below the particles 440.

[0175] As Figure 14 shown, an etching process is performed using the pattern mask 450, so that a first non-uniform region 158 including a plurality of first etched patterns 158a and a plurality of first protrusions 158b is formed on one surface of the light-emitting layer 150a.

[0176] The first conductive semiconductor layer 151 of the light-emitting layer 150a corresponding to the patterns of the pattern mask 450 is not removed, but the first conductive semiconductor layer 151 of the light-emitting layer 150a corresponding to the patterns of the pattern mask 450 is over-etched during the continued etching process, so that a first peak P1 is formed at the apex of the first protrusion 158b. On the other hand, the deepest bottom of the first etched pattern 158a becomes gradually difficult to etch, thereby forming a groove or valley.

[0177] As Figure 15 shown, the pattern mask 450 is removed.

[0178] As Figure 16 shown, a first electrode 154 is formed on the first non-uniform region 158. In such a case, the first electrode 154 includes a second non-uniform region 156 having a shape corresponding to the shape of the first non-uniform region 158. That is, the second non-uniform region 156 further includes a plurality of second etched patterns 156a and a plurality of second protrusions 156b. The shapes of the plurality of second etched patterns 156a respectively correspond to the shapes of the plurality of first etched patterns 158a. The shapes of the plurality of second protrusions 156b respectively correspond to the shapes of the plurality of first protrusions 158b.

[0179] As described above, the semiconductor light-emitting element 150A of the first embodiment including the light-emitting layer 150a, the passivation layer 157, the first electrode 154, and the second electrode 155 is manufactured.

[0180] AsFigure 17 As shown, the sacrificial layer is removed using an etchant, whereby the semiconductor light-emitting element 150A of the first embodiment is separated from the temporary substrate 420.

[0181] Figure 18 It is a cross-sectional view showing the display device of the first embodiment.

[0182] Referring to Figure 18 , the display device 301 of the first embodiment includes a backplane substrate 300A, a semiconductor light-emitting element 150A, a fixing member 390, a connection electrode 370, and an electrode wiring 380.

[0183] The backplane substrate 300A is a bottom substrate for manufacturing the display device 301 for performing post-processes such as a self-assembly process and an electrical connection. That is, the semiconductor light-emitting element 150A is assembled on the backplane substrate 300A through a self-assembly process, and is electrically connected to the semiconductor light-emitting element 150A through a post-process, whereby the display device 301 of the first embodiment can be manufactured.

[0184] As Figure 19 shown, the backplane substrate 300A includes a substrate 310, a first set of assembly lines 321, a second set of assembly lines 322, a first insulating layer 330, and a partition 340. For example, the first set of assembly lines 321, the second set of assembly lines 322, the first insulating layer 330, and the partition 340 are formed on the substrate 310, whereby the backplane substrate 300A is manufactured.

[0185] The substrate 310 is referred to as a lower substrate or a display substrate as a support substrate for supporting components constituting the display device 301 of the first embodiment, such as the semiconductor light-emitting element 150A, the connection electrode 370, the second insulating layer 350, the third insulating layer 360, and the electrode wiring 380. Although not shown, an upper substrate may be disposed on the electrode wiring 380, and this is not limited.

[0186] The first set of assembly lines 321 is disposed on the substrate 310. The second set of assembly lines 322 is disposed on the substrate 310.

[0187] For example, the first set of assembly lines 321 and the second set of assembly lines 322 are respectively disposed on the same layer. For example, the first set of assembly lines 321 and the second set of assembly lines 322 are in contact with the upper surface of the substrate 310, but this is not limited thereto. For example, the first set of assembly lines 321 and the second set of assembly lines 322 are respectively disposed on the same layer. For example, the first set of assembly lines 321 and the second set of assembly lines 322 are respectively arranged side by side with each other. The first set of assembly lines 321 and the second set of assembly lines 322 respectively function to assemble the semiconductor light-emitting element 150A into the assembly hole 340H by means of self-assembly. That is, during self-assembly, an alternating voltage is supplied to the first set of assembly lines 321 and the second set of assembly lines 322, an electric field is generated between the first set of assembly lines 321 and the second set of assembly lines 322, and the moving semiconductor light-emitting element 150A is assembled into the assembly hole 340H by the DEP force formed by this electric field ( Figure 6 of 1100). The assembly hole 340H has a diameter larger than the diameter of the semiconductor light-emitting element 150A.

[0188] The first set of assembly lines 321 and the second set of assembly lines 322 respectively include a plurality of metal layers. Although not shown, the first set of assembly lines 321 and the second set of assembly lines 322 respectively include main wirings and auxiliary electrodes. The main wirings of the first set of assembly lines 321 and the second set of assembly lines 322 are respectively arranged in a wide width along one direction of the substrate 310. The auxiliary electrodes of the first set of assembly lines 321 and the second set of assembly lines 322 extend from the main wirings toward the assembly hole 340H. The auxiliary electrodes are electrically connected to the main wirings. The main wirings are disposed on the auxiliary wirings, and the lower surface of the main wiring may be in contact with the upper surface of the auxiliary wiring, but this is not limited thereto.

[0189] On the other hand, although not shown, the first set of assembly lines 321 and the second set of assembly lines 322 may also be disposed on different layers from each other.

[0190] The first insulating layer 330 is disposed on the first set of assembly lines 321 and the second set of assembly lines 322. For example, the first insulating layer 330 is made of an inorganic substance or an organic substance. For example, the first insulating layer 330 is made of a substance having a dielectric constant related to the DEP force. For example, the larger the dielectric constant of the first insulating layer 330, the greater the DEP force, but this is not limited thereto. The first insulating layer 330 can prevent the fluid from directly contacting and being corroded by the first set of assembly lines 321 or the second set of assembly lines 322 during self-assembly through the assembly hole 340H of the partition wall 340 formed later.

[0191] In the drawings, the first insulating layer 330 is shown removed within the assembly hole 340H, but within the assembly hole 340H on the backplane substrate 300A, the first insulating layer 330 remains in an unremoved state. The process of removing the first insulating layer 330 within the assembly hole 340H is performed after the semiconductor light-emitting element 150A is assembled into the assembly hole 340H. The reason for removing the first insulating layer 330 within the assembly hole 340H is to electrically connect the connection electrode 370 to the first set of assembly lines 321 and / or the second set of assembly lines 322.

[0192] The partition wall 340 is disposed on the first insulating layer 330. The first insulating layer 330 has the assembly holes 340H. The assembly holes 340H are respectively formed in a plurality of sub-pixels PX1, PX2, PX3 of each of the plurality of pixels ( Figure 2 of PX). That is, each of the sub-pixels PX1, PX2, PX3 is formed in one assembly hole 340H, but this is not limited thereto. For example, the first insulating layer 330 may be exposed within the assembly hole 340H. For example, the bottom surface of the assembly hole 340H is the upper surface of the first insulating layer 330.

[0193] The height or thickness of the partition wall 340 is determined in consideration of the thickness of the semiconductor light-emitting element 150A.

[0194] On the other hand, although not shown, a pixel circuit and a plurality of signal lines connected to each pixel circuit are provided on each pixel of the plurality of pixels on the backplane substrate 300A. The signal lines include Figure 2 and Figure 3 the data lines (D1 to Dm), scan lines (S1 to Sn), high-potential voltage line VDDL, low-potential voltage line VSSL, etc. shown.

[0195] An assembly process is performed on the backplane substrate 300A configured as above, and a plurality of semiconductor light-emitting elements 150A are assembled into a plurality of sub-pixels PX1, PX2, PX3 of each pixel of the plurality of pixels PX on the substrate 310.

[0196] As an example, a plurality of red semiconductor light-emitting elements, a plurality of green semiconductor light-emitting elements, and a plurality of blue semiconductor light-emitting elements are respectively and sequentially assembled into a plurality of sub-pixels PX1, PX2, PX3 of each pixel of the plurality of pixels PX on the substrate 310.

[0197] As another example, a plurality of red semiconductor light-emitting elements, a plurality of green semiconductor light-emitting elements, and a plurality of blue semiconductor light-emitting elements are simultaneously assembled into a plurality of sub-pixels PX1, PX2, and PX3 of each pixel of a plurality of pixels PX on a substrate 310. For this purpose, a plurality of red semiconductor light-emitting elements, a plurality of green semiconductor light-emitting elements, and a plurality of blue semiconductor light-emitting elements are put into the fluid in the cavity and mixed. Then, the same self-assembly process is performed to simultaneously assemble the plurality of red semiconductor light-emitting elements, the plurality of green semiconductor light-emitting elements, and the plurality of blue semiconductor light-emitting elements into the plurality of sub-pixels PX1, PX2, and PX3 of each pixel of the plurality of pixels PX on the substrate 310.

[0198] In order to perform self-assembly simultaneously, the red semiconductor light-emitting element, the green semiconductor light-emitting element, and the blue semiconductor light-emitting element have exclusivity among each other. That is, the respective shapes or sizes of the red semiconductor light-emitting element, the green semiconductor light-emitting element, and the blue semiconductor light-emitting element are different. For example, the red semiconductor light-emitting element is formed in a circular shape, the green semiconductor light-emitting element is formed in a first elliptical shape having a first minor axis and a first major axis, and the blue semiconductor light-emitting element is formed in a second elliptical shape. At this time, the second elliptical shape has a second minor axis smaller than the first minor axis and a second major axis larger than the first major axis.

[0199] On the other hand, the semiconductor light-emitting element 150A is disposed in the assembly hole 340H. The semiconductor light-emitting element 150A is Figure 7 the semiconductor light-emitting element 150A as shown. The semiconductor light-emitting element 150A is a red semiconductor light-emitting element that generates red light, a green semiconductor light-emitting element that generates green light, or a blue semiconductor light-emitting element that generates blue light.

[0200] For example, when performing self-assembly, the red semiconductor light-emitting element, the green semiconductor light-emitting element, and the blue semiconductor light-emitting element dispersed in the same cavity ( Figure 6 1300) move simultaneously through the same assembly device 1100 and are simultaneously assembled into the assembly holes 340H of the corresponding each sub-pixel ( Figure 2 PX1, PX2, PX3).

[0201] Each sub-pixel ( Figure 2When the sizes of the assembly holes 340H for PX1, PX2, and PX3 are the same, the red semiconductor light-emitting element, the green semiconductor light-emitting element, and the blue semiconductor light-emitting element are not assembled into the assembly holes 340H where they should be assembled, but are assembled into other assembly holes 340H. To solve such a problem, the red semiconductor light-emitting element, the green semiconductor light-emitting element, and the blue semiconductor light-emitting element are respectively formed into different shapes, and the assembly holes 340H are formed in a manner corresponding to the different shapes of the red semiconductor light-emitting element, the green semiconductor light-emitting element, and the blue semiconductor light-emitting element respectively. That is, the exclusivity between the semiconductor light-emitting elements is improved to prevent assembly defects or color mixing defects.

[0202] For example, the shape of the red semiconductor light-emitting element is circular, the shape of the green semiconductor light-emitting element is a first ellipse having a first minor axis and a first major axis, and the shape of the blue semiconductor light-emitting element is a second ellipse having a second minor axis smaller than the first minor axis and a second major axis larger than the first major axis.

[0203] The semiconductor light-emitting element 150A is disposed in the assembly hole 340H to generate colored light. As described above, the semiconductor light-emitting element 150A includes one of the red semiconductor light-emitting element, the green semiconductor light-emitting element, and the blue semiconductor light-emitting element. For example, the red semiconductor light-emitting element is disposed in the first sub-pixel ( Figure 2 of PX1), the green semiconductor light-emitting element is disposed in the second sub-pixel PX2, and the blue semiconductor light-emitting element is disposed in the third sub-pixel PX3. Therefore, a full-color image is displayed by the red light emitted from the first sub-pixel PX1, the green light emitted from the second sub-pixel PX2, and the blue light emitted from the third sub-pixel PX3.

[0204] The semiconductor light-emitting element 150A of the embodiment is a vertical semiconductor light-emitting element, but this is not limited thereto. In such a case, after the semiconductor light-emitting element is assembled into the assembly hole 340H, the first electrode 154 of the semiconductor light-emitting element is electrically connected to the lower electrode wiring, i.e., the first set of assembly lines 321 or the second set of assembly lines 322, and the upper side of the semiconductor light-emitting element 150A is electrically connected to the electrode wiring 380.

[0205] On the other hand, the semiconductor light-emitting element 150A assembled into the assembly hole 340H by self-assembly is fixed to the assembly hole 340H before electrical connection is formed. For this purpose, the fixing member 390 is disposed in the assembly hole 340H of the backplane substrate 300A. For example, the fixing member 390 is disposed between the semiconductor light-emitting element 150A and the bottom surface of the assembly hole 340H. The fixing member 390 includes an organic substance, but is not limited thereto. The semiconductor light-emitting element 150A is fixed to the inside of the assembly hole 340H by the fixing member 390. That is, the fixing member 390 fixes the semiconductor light-emitting element 150A to the first insulating layer 330 inside the assembly hole 340H.

[0206] The fixing member 390 is formed through the following process. First, an insulating film including the assembly hole 340H is formed on the substrate 310. In such a case, the insulating film is formed around the semiconductor light-emitting element 150A inside the assembly hole 340H. After that, the insulating film on the substrate 310 is removed through an etching process. At this time, since the semiconductor light-emitting element 150A functions as a mask, the insulating film located below the semiconductor light-emitting element 150A is not removed and remains, and is formed as the fixing member 390. That is, the insulating film located below the semiconductor light-emitting element 150A becomes the fixing member 390. Thereby, the fixing member 390 has a shape corresponding to the shape of the semiconductor light-emitting element 150A. For example, the diameter (or width) of the fixing member 390 is the same as the diameter (or width) of the semiconductor light-emitting element 150A, but is not limited thereto.

[0207] As described above, a first electrode 154 including a second non-uniform region 156 is formed on the lower side of the semiconductor light-emitting element 150A. That is, the second non-uniform region 156 includes a plurality of second engraved patterns 156a and a plurality of second protrusions 156b. In such a case, as Figure 18 shown, the fixing member 390 is disposed in the plurality of second engraved patterns 156a. For example, the fixing member 390 is in contact with the second engraved patterns 156a inside the plurality of second engraved patterns 156a. Thereby, the contact area between the fixing member 390 and the first electrode 154 is significantly increased, so that the semiconductor light-emitting element 150A is more firmly fixed to the first insulating layer 330 of the backplane substrate 300A through the fixing member 390, and thus the fixing property of the semiconductor light-emitting element 150A can be further enhanced.

[0208] On the other hand, the connection electrode 370 is disposed in the assembly hole 340H. The connection electrode 370 is electrically connected to the side portion of the semiconductor light-emitting element 150A inside the assembly hole 340H. At the same time, the connection electrode 370 is electrically connected to the first set of assembly lines 321 and / or the second set of assembly lines 322 inside the assembly hole 340H. Thereby, the connection electrode 370 electrically connects the side portion of the semiconductor light-emitting element 150A and the first set of assembly lines 321 and / or the second set of assembly lines 322.

[0209] For example, the connection electrode 370 is composed of at least one or more layers with excellent conductivity. For example, the connection electrode 370 includes a first layer containing molybdenum (Mo), a second layer containing aluminum (Al), and a third layer containing molybdenum (Mo).

[0210] On the other hand, although not shown, the connection electrode 370 is disposed along the periphery of the semiconductor light-emitting element 150A within the assembly hole 340H. For example, the connection electrode 370 is disposed between the inner side surface of the assembly hole 340H and the outer side surface of the semiconductor light-emitting element 150A.

[0211] On the other hand, the display device 301 of the first embodiment includes a second insulating layer 350 and a third insulating layer 360. The second insulating layer 350 and the third insulating layer 360 include organic substances such as PAC, PI, polymer, etc. or inorganic substances such as SiO2, SiN X etc. For example, the second insulating layer 350 and / or the third insulating layer 360 include a photosensitive substance. The second insulating layer 350 and the third insulating layer 360 include the same substance, but this is not limited thereto.

[0212] The second insulating layer 350 functions as a stopper for determining the height of the connection electrode 370. That is, the height of the connection electrode 370 is formed to correspond to the height of the second insulating layer 350. That is, when the height of the second insulating layer 350 is increased, the height of the connection electrode 370 also becomes higher. The uppermost side of the connection electrode 370 is located at a position lower than the active layer 152 of the semiconductor light-emitting element 150A, thereby blocking the possibility of electrical short circuit between the connection electrode 370 and the active layer 152.

[0213] The third insulating layer 360 is a fixing layer for fixing the semiconductor light-emitting element 150A or a planarizing layer for easily forming a layer through a later process. In such a case, the upper surface of the third insulating layer 360 has a straight plane.

[0214] The third insulating layer 360 is only formed within the assembly hole 340H and not on the semiconductor light-emitting element 150A. Although not shown, the third insulating layer 360 is formed on the semiconductor light-emitting element 150A. In such a case, the electrode wiring 380 is electrically connected to the upper side of the semiconductor light-emitting element 150A through the third insulating layer 360. For this purpose, a contact hole is formed in the third insulating layer 360 to form the electrode wiring 380. On the other hand, the third insulating layer 360 is formed on the partition wall 340.

[0215] On the other hand, the electrode wiring 380 is disposed on the semiconductor light-emitting element 150A. Since the third insulating layer 360 is not formed on the semiconductor light-emitting element 150A, the electrode wiring 380 is directly connected to the upper side of the semiconductor light-emitting element 150A. That is, the electrode wiring 380 is not interfered with by the third insulating layer 360 and is in contact with the upper surface of the second electrode 155, which is the upper side of the semiconductor light-emitting element 150A. For example, the electrode wiring 380 is in surface contact with the upper surface of the second electrode 155 of the semiconductor light-emitting element 150A.

[0216] Thereby, the semiconductor light-emitting element 150A emits light by the voltage supplied to the electrode wiring 380 and the first set of assembly lines 321 and / or the second set of assembly lines 322.

[0217] Figures 20a to 25 A method of manufacturing a display device according to the first embodiment is shown.

[0218] As Figure 20a shown, a backplane substrate 300A is provided. For self-assembly, the backplane substrate 300A is mounted in the cavity. At this time, the semiconductor light-emitting elements 150A are dispersed in the fluid in the cavity.

[0219] First, when the magnet moves, the semiconductor light-emitting element 150A affected by the magnetic field of the magnet moves toward the magnet. The magnet moves horizontally with respect to the surface of the backplane substrate 300A, so that the semiconductor light-emitting element 150A moves horizontally with respect to the surface of the backplane substrate 300A, but this is not limited thereto.

[0220] After that, an AC voltage is applied to the first set of assembly lines 321 and the second set of assembly lines 322 of the backplane substrate 300A to form a DEP force. Since the first set of assembly lines 321 and the second set of assembly lines 322 are arranged in sub-pixel units, the DEP force is formed in each of the plurality of sub-pixels.

[0221] When the semiconductor light-emitting element 150A that is moving by the magnet passes through the assembly hole 340H of the backplane substrate 300A, the semiconductor light-emitting element 150A is pulled by the DEP force and assembled into the assembly hole 340H.

[0222] As described above, the first electrode 154 of the semiconductor light-emitting element 150A includes a second non-uniform region 156 having a plurality of second etched patterns 156a and a plurality of second protrusions 156b. As Figure 20bAs shown, relatively large DEP forces are formed on the second protrusions 156b of the first electrode 154. That is, in the case where the first electrode 154 does not include the second non-uniform region 156 as in the comparative example, that is, when the first electrode 154 has a straight plane, the DEP force is relatively small. On the contrary, as shown in the embodiment, when the first electrode 154 of the semiconductor light-emitting element 150A includes the second non-uniform region 156 having a plurality of second etched patterns 156a and a plurality of second protrusions 156b, a larger DEP force is formed compared to the comparative example. In particular, the DEP force on each of the plurality of second protrusions 156b of the first electrode 154 is relatively larger.

[0223] Thus, when the semiconductor light-emitting element 150A of the embodiment horizontally moves relative to the surface of the backplane substrate 300A and passes through the assembly hole 340H, a larger DEP force is formed in the assembly hole 340H by the plurality of second protrusions 156b included in the first electrode 154 of the semiconductor light-emitting element 150A. Therefore, the semiconductor light-emitting element 150A is immediately pulled and assembled into the assembly hole 340H. At the same time, the semiconductor light-emitting element 150A is more firmly fixed to the assembly hole 340H by the larger DEP force. Thereby, the assembly rate of the semiconductor light-emitting element 150A is improved and the detachment of the semiconductor light-emitting element 150A is prevented, thereby reducing assembly defects and improving the lighting efficiency.

[0224] As Figure 21 shown, an insulating film 390a is formed on the substrate 310. The insulating film 390a is formed not only on the partition wall 340 but also on the assembly hole 340H.

[0225] As Figure 22 shown, the insulating film 390a on the substrate 310 is removed by an etching process. At this time, since the semiconductor light-emitting element 150A acts as a mask, the insulating film 390a located below the semiconductor light-emitting element 150A is not removed and remains, and is formed as the fixing member 390. That is, the insulating film 390a located below the semiconductor light-emitting element 150A becomes the fixing member 390.

[0226] As described above, the first electrode 154 disposed on the lower side of the semiconductor light-emitting element 150A includes a plurality of second etched patterns 156a and a plurality of second protrusions 156b. In such a case, the fixing member 390 is formed within the plurality of second etched patterns 156a, so that the contact area between the fixing member and the semiconductor light-emitting element 150A is significantly increased. Thereby, the semiconductor light-emitting element 150A is more firmly fixed to the first insulating layer 330 of the backplane substrate 300A by the fixing member 390, thus further strengthening the fixing property of the semiconductor light-emitting element 150A. Until the electrical connection is formed through a later process, the semiconductor light-emitting element 150A does not come off outside the assembly hole 340H, thereby preventing assembly defects and improving the lighting efficiency.

[0227] On the other hand, although not shown, an etching process is performed to remove the first insulating layer 330 exposed in the assembly hole 340H, thereby exposing the first set of assembly lines 321 and / or the second set of assembly lines 322. At this time, the semiconductor light-emitting element 150A and the fixing member 390 act as masks, so that the first insulating layer 330 located below the fixing member 390 in the assembly hole 340H is not removed, and the first insulating layer 330 surrounding the semiconductor light-emitting element 150A is removed.

[0228] As Figure 23 shown, a metal film 370a is deposited on the partition wall 340 and the semiconductor light-emitting element 150A. After that, an insulating film 350a is formed on the metal film 370a.

[0229] The insulating film 350a is formed on the front region of the substrate 310. The insulating film 350a is composed of an organic substance that is easy to form a thick thickness, but an inorganic substance can also be used.

[0230] As Figure 24 shown, the upper surface of the insulating film 350a is removed by an ashing process, so that the upper surface of the insulating film 350a is located within the assembly hole 340H. After that, an etching process is performed to etch the metal film 370a, thereby forming the connection electrode 370. The second insulating layer 350 acts as a stopper to prevent the metal film 370a from being further etched below the upper surface of the insulating film 350a.

[0231] As Figure 25 shown, a third insulating layer 360 is formed in the assembly hole 340H, and the electrode wiring 380 is disposed on the upper side of the semiconductor light-emitting element 150A. The electrode wiring 380 is disposed on the third insulating layer 360. The upper surface of the third insulating layer 360 and the upper surface of the second electrode 155 of the semiconductor light-emitting element 150A are located on the same horizontal line, but this is not limited thereto.

[0232] The passivation layer 157 is removed from above the semiconductor light-emitting element 150A. The passivation layer 157 is removed after forming the fixing member 390 ( Figure 22 ) or after forming the connection electrode 370 ( Figure 24 ), but it is not limited thereto.

[0233] [Second Embodiment]

[0234] Figure 26 FIG. is a cross-sectional view showing a semiconductor light-emitting element according to the second embodiment. Figure 27 FIG. is a bottom view observed in a state where the first electrode 154 is removed from the semiconductor light-emitting element according to the second embodiment.

[0235] The second embodiment is the same as the first embodiment except for the first uniform region 158' and the second uniform region 156'. In the second embodiment, constituent elements having the same shape, structure, and / or function as those in the first embodiment are given the same reference numerals and detailed descriptions thereof are omitted.

[0236] Referring to Figure 26 and Figure 27 , the semiconductor light-emitting element 150B according to the second embodiment includes a light-emitting layer 150a, a passivation layer 157, a first non-uniform region 158, a first uniform region 158', a first electrode 154, and a second electrode 155.

[0237] The first non-uniform region 158 and the first uniform region 158' are disposed below the light-emitting layer 150a. The first non-uniform region 158 and the first uniform region 158' are disposed on the lower side of the light-emitting layer 150a. The first non-uniform region 158 and the first uniform region 158' are formed on the lower surface of the first conductive-type semiconductor layer 151. The first non-uniform region 158 and the first uniform region 158' are part of the first conductive-type semiconductor layer 151. That is, the lower surface of the first conductive-type semiconductor layer 151 is etched to form the first non-uniform region 158 including a plurality of first etched patterns 158a and a plurality of first protrusions 158b and the first uniform region 158' having a first groove.

[0238] The first uniform region 158' is disposed in a two-way wide width from the central portion on the lower side of the light-emitting layer 150a. The first uniform region 158' has a plane. The first uniform region 158' may have a fine roughness depending on the etching degree, but it is not limited thereto. The first uniform region 158' has a first groove. That is, etching is performed from the lower side of the light-emitting layer 150a toward the inside to form the first groove in the first uniform region 158'. Although not shown, the lower side of the light-emitting layer 150a may be in an unetched state, that is, the lower surface of the first conductive-type semiconductor layer 151 of the light-emitting layer 150a may be the first uniform region 158', but it is not limited thereto.

[0239] The first non-uniform region 158 includes a plurality of first engraved patterns 158a and a plurality of first protrusions 158b. The first engraved patterns 158a and the first protrusions 158b are described in detail in the first embodiment, and thus further description is omitted.

[0240] On the other hand, there is at least one first non-uniform region 158. For example, the first non-uniform region 158 includes a 1-1 non-uniform region 158-1 and a 1-2 non-uniform region 158-2.

[0241] The 1-1 non-uniform region 158-1 is disposed below the first light-emitting region of the light-emitting layer 150a, and the 1-2 non-uniform region 158-2 is disposed below the second light-emitting region of the light-emitting layer 150a. The first light-emitting region and the second light-emitting region are separated from each other, and thus the 1-1 non-uniform region 158-1 and the 1-2 non-uniform region 158-2 are also separated from each other. The first light-emitting region and the second light-emitting region are distinguished for the convenience of description, and as a part of the light-emitting layer 150a, the first light-emitting region and the second light-emitting region may be formed integrally.

[0242] The first uniform region 158′ is located between the 1-1 non-uniform region 158-1 and the 1-2 non-uniform region 158-2. That is, the 1-1 non-uniform region 158-1 and the 1-2 non-uniform region 158-2 are separated from each other with the first uniform region 158′ therebetween. For example, the 1-1 non-uniform region 158-1 is located on the first side of the first uniform region 158′, and the 1-2 non-uniform region 158-2 is located on the second side of the first uniform region 158′. That is, the 1-1 non-uniform region 158-1 and the 1-2 non-uniform region 158-2 are respectively disposed on both sides of the lower side of the light-emitting layer 150a.

[0243] The 1-1 non-uniform region 158-1 and the 1-2 non-uniform region 158-2 respectively include a plurality of first engraved patterns 158a and a plurality of first protrusions 158b. In such a case, the surface of the first uniform region 158′ and the bottom of the first engraved pattern 158a are on the same horizontal line, but this is not limited thereto. As described above, since the first uniform region 158′ has a first groove, the surface of the first uniform region 158′, that is, the bottom of the first groove, is on the same horizontal line as the bottom of the first engraved pattern 158a.

[0244] Although not shown, the first uniform region 158' and the second uniform region 156' may also not have the first groove and the second groove 159b, respectively. The lower surface of the first-conductive-type semiconductor layer 151 is not etched, so the lower surface of the first-conductive-type semiconductor layer 151 itself becomes the first uniform region 158', and the second uniform region 156' on which the first electrode 154 is formed is formed on the first uniform region 158'. In such a case, the surface of the first uniform region 158' and the first peak P1 of the first protrusion 158b are on the same horizontal line.

[0245] On the other hand, the first electrode 154 includes a second non-uniform region 156 and a second uniform region 156'. The second non-uniform region 156 has a shape corresponding to the shape of the first non-uniform region 158. The second uniform region 156' has a shape corresponding to the shape of the first uniform region 158'.

[0246] The uniform region 156' is a second groove 159b corresponding to the first groove. The second uniform region 156' is arranged bidirectionally wide from the central part on the lower side of the light-emitting layer 150a. The second uniform region 156' has a plane.

[0247] The second non-uniform region 156 includes a 2-1 non-uniform region 156-1 and a 2-2 non-uniform region 156-2. The second uniform region 156' is located between the 2-1 non-uniform region 156-1 and the 2-2 non-uniform region 156-2. The 2-1 non-uniform region 156-1 has a shape corresponding to the shape of the 1-1 non-uniform region 158-1. The 2-2 non-uniform region 156-2 has a shape corresponding to the shape of the 1-2 non-uniform region 158-2.

[0248] The 2-1 non-uniform region 156-1 and the 2-2 non-uniform region 156-2 each include a plurality of second etched patterns 156a and a plurality of second protrusions 156b. In such a case, the surface of the second uniform region 156' and the bottom of the second etched pattern 156a are on the same horizontal line, but this is not limited thereto. As described above, since the second uniform region 156' has the second groove 159b, the surface of the second uniform region 156', that is, the bottom of the second groove 159b, is on the same horizontal line as the bottom of the second etched pattern 156a.

[0249] Thus, when the 2-1 non-uniform region 156-1 and the 2-2 non-uniform region 156-2 of the first electrode 154 are respectively arranged on both sides of the lower side of the light-emitting layer 150a, when the semiconductor light-emitting element 150B of the second embodiment is located in the assembly hole 340H by self-assembly, as Figure 30As shown, the second protrusions 156b in the 2-1 non-uniform region 156-1 and the 2-2 non-uniform region 156-2 of the first electrode 154 each form a relatively large DEP force. In addition, as Figure 30 shown, the DEP force forms a greater DEP force on both sides of the assembly hole 340H than at the center.

[0250] In such a case, as Figure 28 shown, even when the circular semiconductor light-emitting element 150B is assembled into the assembly hole 340H of the backplane substrate 300A while being rotated at a specified angle in the correct position, as Figure 29 shown, the 2-1 non-uniform region 156-1 and the 2-2 non-uniform region 156-2 on both sides of the first electrode 154 located in the second uniform region 156' are self-aligned in a manner overlapping with the first assembly line 321 and the second assembly line 322, respectively, so that the semiconductor light-emitting element 150B is assembled into the correct position.

[0251] That is, a DEP force is formed between the first assembly line 321 and the second assembly line 322, and the 2-1 non-uniform region 156-1 and the 2-2 non-uniform region 156-2 on both sides of the second uniform region 156' each form a DEP force greater than that of the second uniform region 156'. Therefore, the semiconductor light-emitting element 150B is self-aligned in such a way that the 2-1 non-uniform region 156-1 and the 2-2 non-uniform region 156-2 of the first electrode 154 of the semiconductor light-emitting element 150B are aligned and overlap with the first assembly line 321 and the second assembly line 322. The 2-1 non-uniform region 156-1 and the 2-2 non-uniform region 156-2 on both sides of the second uniform region 156' are respectively aligned with the first assembly line 321 and the second assembly line 322, that is, they are set to the correct position of the semiconductor light-emitting element 150B in an aligned manner. In such a case, when the semiconductor light-emitting element 150B is not assembled into the correct position of the assembly hole 340H, there is no need to perform an additional alignment process for assembling into the correct position, and problems caused by misalignment, that is, poor electrical connection due to incorrect alignment, can be prevented.

[0252] Figures 31 to 40 Shows a method for manufacturing a semiconductor light-emitting element according to the second embodiment.

[0253] Figure 31 Same as Figure 11 Therefore, through the processes shown in Figure 9 and Figure 10 as shown in Figure 31 the particles 440 are coated on the surface of the light-emitting layer 150a exposed by removing the growth substrate 410.

[0254] Apply a photosensitive film 460a on the particles 440 ( Figure 32 ), and pattern the photosensitive film 460a to form a PR pattern 460 ( Figure 33 ). The PR pattern 460 is formed in a two-way wide width from the central part of the light-emitting layer 150a.

[0255] As Figure 34 shown, a fixing film 450a is formed on the particles 440. The fixing film 450a is formed on the PR pattern 460. The fixing film 450a includes inorganic substances such as SiO2 and SiN x , but is not limited thereto. The fixing film 450a is formed between the particles 440 under the particles 440 through the spaces between the particles 440. Through the fixing film 450a, the particles 440 are firmly fixed to the light-emitting layer 150a.

[0256] As Figure 35 shown, remove the PR pattern 460 and the particles 440 fixed through the PR pattern 460, thereby exposing the central part of the light-emitting layer 150a.

[0257] As Figure 36 shown, remove the fixing film 450a on the particles 440 and remove the particles 440, thereby forming a pattern mask 450 on both sides of the light-emitting layer 150a. The pattern mask 450 has a shape corresponding to the shape of the particles 440. The pattern mask 450 has a structure that forms a pattern between the particles 440 and does not form a pattern under the particles 440.

[0258] As Figure 37 shown, perform an etching process using the pattern mask 450, thereby etching the central part of the light-emitting layer 150a to form a first uniform region 158' having a first groove, and etching both sides of the light-emitting layer 150a through the pattern of the pattern mask 450, thereby forming a first non-uniform region 158-1 and a first non-uniform region 158-2 including a plurality of first etched patterns 158a and a plurality of first protrusions 158b.

[0259] Remove the first conductive semiconductor layer 151 of the light-emitting layer 150a between the patterns corresponding to the pattern mask 450, but the first conductive semiconductor layer 151 of the light-emitting layer 150a corresponding to the pattern of the pattern mask 450 may not be removed. During the continued etching process, over-etch the first conductive semiconductor layer 151 corresponding to the pattern of the pattern mask 450, thereby forming a first peak P1 at the apex of the first protrusion 158b. On the other hand, the deepest bottom of the first etched pattern 158a becomes gradually difficult to etch, forming a groove or valley.

[0260] As Figure 38 shown, the pattern mask 450 can be removed.

[0261] As Figure 39 shown, a first electrode 154 is formed on a first uniform region 158′, a first non-uniform region 158-1, and a first non-uniform region 158-2. In such a case, the first electrode 154 includes a second non-uniform region 156 and a second uniform region 156′. The second non-uniform region 156 includes a second non-uniform region 156-1 and a second non-uniform region 156-2. The second non-uniform region 156-1 has a shape corresponding to the shape of the first non-uniform region 158-1. The second non-uniform region 156-2 has a shape corresponding to the shape of the first non-uniform region 158-2. The second uniform region 156′ has a shape corresponding to the shape of the first uniform region 158′. In such a case, the second non-uniform region 156-1 and the second non-uniform region 156-2 each include a plurality of second etched patterns 156a and a plurality of second protrusions 156b.

[0262] As described above, a semiconductor light-emitting element 150B of the second embodiment including a light-emitting layer 150a, a passivation layer 157, a first electrode 154, and a second electrode 155 is manufactured.

[0263] As Figure 40 shown, the regenerative layer is removed using an etching solution, and thus the semiconductor light-emitting element 150B of the second embodiment is separated from the temporary substrate 420.

[0264] Figure 41 is a cross-sectional view showing a display device of the second embodiment.

[0265] Except for the semiconductor light-emitting element 150B, the second embodiment is the same as the first embodiment ( Figure 18 ). In the second embodiment, components having the same shape, structure, and / or function as those of the first embodiment are given the same reference numerals and detailed descriptions thereof are omitted.

[0266] Referring to Figure 41 , the display device 302 of the second embodiment includes a backplane substrate 300A, a semiconductor light-emitting element 150B, a fixing member 390, a connecting electrode 370, and an electrode wiring 380.

[0267] The semiconductor light-emitting element 150B is Figure 26 the semiconductor light-emitting element 150B of the second embodiment shown.

[0268] A second groove 159b is formed in the central portion on the lower side of the semiconductor light-emitting element 150B, and the fixing member 390 is disposed in the second groove 159b. Therefore, the contact area between the fixing member 390 and the semiconductor light-emitting element 150B is significantly increased. Thus, the fixing of the semiconductor light-emitting element 150B is further strengthened by the fixing member 390, thereby preventing assembly defects and improving the lighting efficiency.

[0269] [Third Embodiment]

[0270] Figure 42 FIG. is a cross-sectional view showing a semiconductor light-emitting element according to the third embodiment. Figure 43 FIG. is a bottom view observed in a state where the first electrode 154 is removed from the semiconductor light-emitting element according to the third embodiment.

[0271] The third embodiment is the same as the second embodiment except for the arrangement positions of the second uniform region 156' and the second non-uniform region 156 of the first electrode 154. In the third embodiment, components having the same shape, structure, and / or function as those in the second embodiment are given the same reference numerals and detailed descriptions thereof are omitted.

[0272] Refer to Figure 42 and Figure 43 , the semiconductor light-emitting element 150C according to the third embodiment includes a light-emitting layer 150a, a passivation layer 157, a first non-uniform region 158, a first uniform region 158', a first electrode 154, and a second electrode 155.

[0273] The first non-uniform region 158 is arranged bidirectionally wide from the central portion of the light-emitting layer 150a. The first non-uniform region 158 includes a plurality of first etched patterns 158a and a plurality of first protrusions 158b.

[0274] The first uniform region 158' includes a first-1 uniform region and a first-2 uniform region. The first-1 uniform region and the first-2 uniform region are arranged on both sides of the light-emitting layer 150a. The first non-uniform region 158 is located between the first-1 uniform region and the first-2 uniform region. The first-1 uniform region is located on one side of the first non-uniform region 158, and the first-2 uniform region is located on the other side of the first non-uniform region 158.

[0275] The first-1 uniform region has a first-1 groove 159a-1, and the first-2 uniform region has a first-2 groove 159a-2. The first-1 groove 159a-1 and the first-2 groove 159a-2 have the same depth, but this is not limited.

[0276] The first electrode 154 includes a second uniform region 156' and a second non-uniform region 156.

[0277] The second non-uniform region 156 has a shape corresponding to that of the first non-uniform region 158. The second uniform region 156' has a shape corresponding to that of the first uniform region 158'. The second non-uniform region 156 includes a plurality of second engraved patterns 156a and a plurality of second protrusions 156b.

[0278] The second uniform region 156' includes a 2-1 uniform region 156'-1 and a 2-2 uniform region 156'-2. The 2-1 uniform region 156'-1 has a shape corresponding to that of the 1-1 uniform region. The 2-2 uniform region 156'-2 has a shape corresponding to that of the 1-2 uniform region. The 2-1 uniform region 156'-1 has a 2-1 groove 159b-1, and the 2-2 uniform region 156'-2 has a 2-2 groove 159b-2. The 2-1 groove 159b-1 and the 2-2 groove 159b-2 have the same depth, but this is not limited thereto.

[0279] Although not shown, the first uniform region 158' and the second uniform region 156' may not have the first groove and the second groove 159b, respectively. Since the lower surface of the first conductive type semiconductor layer 151 is not etched, the lower surface of the first conductive type semiconductor layer 151 itself becomes the first uniform region 158', and the second uniform region 156' on which the first electrode 154 is formed is formed on the first uniform region 158'. In such a case, the surface of the first uniform region 158' and the first peak P1 of the first protrusion 158b are on the same horizontal line.

[0280] On the other hand, the second non-uniform region 156 is located between the 2-1 uniform region 156'-1 and the 2-2 uniform region 156'-2.

[0281] Figure 44 It is a cross-sectional view showing a display device of the third embodiment.

[0282] Except for the semiconductor light-emitting element 150C, the third embodiment is the same as the first embodiment ( Figure 18 ). In the third embodiment, components having the same shape, structure, and / or function as those of the first embodiment are given the same reference numerals and detailed descriptions thereof are omitted.

[0283] Refer to Figure 44 , the display device 303 of the third embodiment includes a backplane substrate 300A, a semiconductor light-emitting element 150C, a fixing member 390, a connection electrode 370, and electrode wirings 380.

[0284] The semiconductor light-emitting element 150C is Figure 42 the semiconductor light-emitting element 150C of the third embodiment shown.

[0285] On both sides below the semiconductor light-emitting element 150C, a second-1 groove 159b-1 and a second-2 groove 159b-2 are formed, and the fixing member 390 is disposed in the second-1 groove 159b-1 and the second-2 groove 159b-2. Therefore, the contact area between the fixing member 390 and the semiconductor light-emitting element 150C is significantly increased. Thereby, the fixing property of the semiconductor light-emitting element 150C is further strengthened by the fixing member 390, thereby preventing assembly defects and improving the lighting efficiency.

[0286] On the other hand, the above-described display device is a display panel. That is, in the embodiment, the display device and the display panel can be understood to have the same meaning. In the embodiment, the actual display device includes a controller (or a processor) for controlling the display panel in order to display the display panel and an image.

[0287] The above detailed description is illustrative only in all aspects and should not be construed in a limiting sense. The scope of the embodiment should be determined by a reasonable interpretation of the appended claims, and all changes within the equivalent scope of the embodiment are included within the scope of the embodiment.

[0288] Industrial applicability

[0289] The embodiment is applicable to the field of displays for displaying images or information. The embodiment is applicable to the field of displays for displaying images or information using semiconductor light-emitting elements. The semiconductor light-emitting element is a micro-level semiconductor light-emitting element or a nano-level semiconductor light-emitting element.

[0290] For example, the embodiment is applicable to TVs, in-vehicle displays, mobile terminals such as mobile phones or smartphones, computer displays such as laptop computers or desktop computers, automotive HUDs (head-Up Displays), backlight units for displays, XR (Extend Reality: extended reality) displays such as AR, VR, MR (mixed Reality), light sources, and the like.

Claims

1. A semiconductor light-emitting element, comprising: A light-emitting layer; A passivation layer that surrounds the light-emitting layer; A first non-uniform region located below the light-emitting layer; A first electrode that includes a second non-uniform region located below the first non-uniform region; And A second electrode located on the light-emitting layer, The first non-uniform region includes a plurality of first etched patterns and a plurality of first protrusions respectively disposed on the plurality of first etched patterns, The second non-uniform region includes a plurality of second etched patterns and a plurality of second protrusions respectively disposed on the plurality of second etched patterns, The shapes of the plurality of second etched patterns respectively correspond to the shapes of the plurality of first etched patterns, The shapes of the plurality of second protrusions respectively correspond to the shapes of the plurality of first protrusions.

2. The semiconductor light-emitting element according to claim 1, wherein The first protrusion has a first peak, The second protrusion has a second peak whose shape corresponds to the shape of the first peak.

3. The semiconductor light-emitting element according to claim 1, wherein The first etched pattern and the second etched pattern respectively form a ring around the first protrusion and the second protrusion.

4. The semiconductor light-emitting element according to claim 1, wherein The maximum diameter of the first protrusion or the maximum width of the first etched pattern is 100 nm or less.

5. The semiconductor light-emitting element according to claim 1, wherein The light-emitting layer includes: A first conductivity type semiconductor layer; An active layer formed on the first conductivity type semiconductor layer; and A second conductivity type semiconductor layer formed on the active layer, The first conductivity type semiconductor layer has a thickness of 70% or more of the overall thickness of the light-emitting layer.

6. The semiconductor light-emitting element according to claim 5, wherein The height of the first protrusion is 20% to 70% of the thickness of the first conductivity type semiconductor layer.

7. The semiconductor light-emitting element according to claim 6, wherein The thickness of the first electrode is 30% or less of the height of the first protrusion.

8. The semiconductor light-emitting element according to claim 7, wherein The first electrode includes a plurality of metal layers, and the plurality of metal layers at least include an ohmic contact layer and a magnetic layer, The plurality of metal layers respectively have a thickness of 50 nm or less.

9. The semiconductor light-emitting element according to claim 5, wherein A first uniform region is included below the light-emitting layer, The first electrode includes a second uniform region whose shape corresponds to the shape of the first uniform region.

10. The semiconductor light-emitting element according to claim 9, wherein The second non-uniform region includes: A 2-1 non-uniform region located below the first light-emitting region of the light-emitting layer; and A 2-2 non-uniform region located below the second light-emitting region of the light-emitting layer, The second uniform region is located between the 2-1 non-uniform region and the 2-2 non-uniform region.

11. The semiconductor light-emitting element according to claim 9, wherein The second uniform region includes: A 2-1 uniform region located below the first light-emitting region of the light-emitting layer; and The second uniform region is located below the second light-emitting region of the above-mentioned light-emitting layer. The above-mentioned second non-uniform region is located between the above-mentioned 2-1 uniform region and the above-mentioned 2-2 uniform region.

12. The semiconductor light-emitting device according to claim 9, wherein The above-mentioned first uniform region and the above-mentioned first non-uniform region are part of the above-mentioned first conductive semiconductor layer.

13. The semiconductor light-emitting device according to claim 9, wherein The above-mentioned first uniform region has a first groove formed on the lower surface of the above-mentioned first conductive semiconductor layer. The above-mentioned second uniform region has a second groove corresponding to the above-mentioned first groove.

14. The semiconductor light-emitting device according to claim 13, wherein The surface of the above-mentioned first uniform region and the bottom of the above-mentioned first photolithographic pattern are on the same horizontal line.

15. A display device, comprising: A backplane substrate; The above-mentioned semiconductor light-emitting device according to claim 15 formed on the above-mentioned backplane substrate; A fixing member located between the above-mentioned backplane substrate and the above-mentioned semiconductor light-emitting device; A connection electrode provided on the side of the above-mentioned semiconductor light-emitting device; And An electrode wiring provided on the upper side of the above-mentioned semiconductor light-emitting device, The above-mentioned connection electrode is connected to at least one set of assembly lines in the first set of assembly lines or the second set of assembly lines of the above-mentioned backplane substrate.

16. The display device according to claim 15, wherein The above-mentioned fixing member is disposed in the above-mentioned second groove.

17. The display device according to claim 15, wherein The above-mentioned fixing member is disposed in the plurality of above-mentioned second photolithographic patterns of the above-mentioned first electrode.

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