Display device

Abstract

The display device includes: a substrate; a first electrode on the substrate; a pixel defining layer on the first electrode; a dummy layer on the pixel defining layer; a light emitting layer on the first electrode and the dummy layer; and a second electrode on the light emitting layer, in which at least one side surface of the dummy layer has an arc-shaped cross-section.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and benefit of Korean Patent Application No. 10 - 2024 - 0006542, filed with the Korean Intellectual Property Office on January 16, 2024, the entire content of which is incorporated herein by reference. Technical field

[0003] Embodiments relate to a display device, and more particularly, to a display device capable of improving image quality and a method of manufacturing the display device. Background art

[0004] With the development of multimedia, display devices have become increasingly important. Accordingly, various display devices such as liquid crystal display devices (LCDs) and organic light - emitting diode display devices (OLEDs) are being developed.

[0005] Among display devices, self - emissive display devices include self - emissive elements such as organic light - emitting diodes. The self - emissive element may include two electrodes facing each other and a light - emitting layer interposed between the two electrodes. In the case where the self - emissive element is an organic light - emitting diode, electrons and holes provided from the two electrodes may recombine in the light - emitting layer to generate excitons. As the generated excitons change from the excited state to the ground state, light may be emitted.

[0006] The display device may include a color conversion element for realizing colors by receiving light from the organic light - emitting diode. For example, the color conversion element may receive blue light from the organic light - emitting diode and emit blue, green, and red light, so that an image having various colors may be viewed. The color conversion element may be provided in the form of an independent substrate in the display device or may be directly integrated with elements in the display device. Summary of the invention

[0007] Aspects of the present disclosure provide a display device capable of improving image quality and a method of manufacturing the display device.

[0008] However, embodiments are not limited to those described herein. The above and other embodiments will become more apparent to those of ordinary skill in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0009] In one embodiment, a display device may include: a substrate; a first electrode on the substrate; a pixel - defining layer on the first electrode; a dummy layer on the pixel - defining layer; a light - emitting layer on the first electrode and the dummy layer; and a second electrode on the light - emitting layer, wherein at least one side surface of the dummy layer may have an arc - shaped cross - section.

[0010] In one embodiment, the dummy layer may have an elliptical cross - section.

[0011] In one embodiment, the dummy layer may include a lower dummy layer and an upper dummy layer. The lower dummy layer may have a width that gradually increases as it moves away from the lower surface of the lower dummy layer along a first direction towards the second electrode on the dummy layer, and the upper dummy layer may have a width that gradually decreases as it moves closer to the upper surface of the upper dummy layer along the first direction.

[0012] In one embodiment, the lower dummy layer may include an inverted conical side surface, and the upper dummy layer may include a regular conical side surface.

[0013] In one embodiment, the dummy layer may have at least one of green, red, blue, and black.

[0014] In one embodiment, the display device may further include: a color filter and a light-shielding pattern portion, disposed on the light-emitting layer on the first electrode, wherein at least one of the dummy layer and the color filter and the light-shielding pattern portion may have the same color.

[0015] In one embodiment, the pixel defining layer may define a light-emitting region corresponding to the light-emitting layer on the first electrode, and in a plan view, the dummy layer may be disposed around the light-emitting region.

[0016] In one embodiment, the pixel defining layer may define a plurality of light-emitting regions, and in a plan view, at least a portion of the dummy layer may be disposed between adjacent light-emitting regions.

[0017] In one embodiment, in a plan view, the dummy layer may have a linear shape.

[0018] In one embodiment, in a plan view, the dummy layer may have a dotted line shape.

[0019] In one embodiment, the dummy layer may include an organic material.

[0020] In one embodiment, the dummy layer may include a negative organic material.

[0021] In one embodiment, the dummy layer may have a thickness of about 1 μm to about 6 μm.

[0022] In one embodiment, the light-emitting layer on the first electrode and the light-emitting layer on the dummy layer may be disconnected from each other.

[0023] In one embodiment, the light-emitting layer may include: a main light-emitting layer, on the first electrode; and a dummy light-emitting layer, disposed on the dummy layer and separated from the main light-emitting layer.

[0024] In one embodiment, the second electrode disposed on the light-emitting layer to overlap the first electrode and the second electrode disposed on the light-emitting layer to overlap the dummy layer may be disconnected from each other.

[0025] In one embodiment, the second electrode may include: a main second electrode disposed on the light-emitting layer to overlap with the first electrode; and a dummy second electrode disposed on the light-emitting layer to overlap with the dummy layer and separated from the main second electrode.

[0026] In one embodiment, the display device may further include a thin-film encapsulation layer on the second electrode, wherein the thin-film encapsulation layer may cover an interrupted portion of the light-emitting layer.

[0027] In one embodiment, the display device may further include a capping layer between the second electrode and the thin-film encapsulation layer, wherein the capping layer may cover an interrupted portion of the light-emitting layer.

[0028] In one embodiment, the display device may further include a wavelength conversion member on the thin-film encapsulation layer.

[0029] According to one embodiment, a method of manufacturing a display device may include: forming a first electrode on a substrate; forming a pixel defining layer on the first electrode; forming a dummy layer on the pixel defining layer; forming a light-emitting layer on the first electrode and the dummy layer; and forming a second electrode on the light-emitting layer, wherein at least one side surface of the dummy layer may have an arcuate cross-section.

[0030] In one embodiment, the formation of the dummy layer may include: forming an organic material layer by coating a negative organic material on the entire surface of a substrate including the first electrode and the pixel defining layer; placing a mask including an opening over the organic material layer; exposing the organic material layer through the mask such that the organic material layer includes an exposed portion and an unexposed portion; and developing the exposed organic material layer to selectively leave the exposed portion among the exposed portion and the unexposed portion of the organic material layer to form a dummy layer on the pixel defining layer.

[0031] In one embodiment, the dummy layer may have an elliptical cross-section.

[0032] In one embodiment, the dummy layer may include a lower dummy layer and an upper dummy layer, the lower dummy layer may have a width that gradually increases as it moves away from the lower surface of the lower dummy layer along a first direction from the dummy layer toward the second electrode on the dummy layer, and the upper dummy layer may have a width that gradually decreases as it moves closer to the upper surface of the upper dummy layer along the first direction.

[0033] In one embodiment, the lower dummy layer may include an inverted conical side surface, and the upper dummy layer may include a regular conical side surface.

[0034] In one embodiment, the dummy layer may have at least one of green, red, blue, and black.

[0035] In one embodiment, the method may further include: forming a color filter and a light-shielding pattern portion on a light-emitting layer on a first electrode, wherein at least one of the dummy layer and the color filter and the light-shielding pattern portion may have the same color.

[0036] In one embodiment, the pixel defining layer may define a light-emitting region corresponding to the light-emitting layer on the first electrode, and in a plan view, the dummy layer is disposed around the light-emitting region.

[0037] A display device capable of improving display quality is provided in the display device according to the present disclosure.

[0038] The effects according to the embodiments are not limited to the above effects, and more various effects are included in the following description of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] These and / or other aspects will become apparent and more readily understood from the following description of the embodiments when taken in conjunction with the accompanying drawings, in which:

[0040] Figure 1 is a schematic perspective view of a display device according to an embodiment;

[0041] Figure 2 is along Figure 1 a schematic cross-sectional view taken along line X1-X1';

[0042] Figure 3 is a schematic plan view of a display device according to an embodiment;

[0043] Figure 4 is Figure 3 an enlarged schematic plan view of region A1 of

[0044] Figure 5 is Figure 3 an enlarged schematic plan view of region A1 of

[0045] Figure 6 is along Figure 4 and Figure 5 a schematic cross-sectional view taken along line X2-X2';

[0046] Figure 7 is Figure 6 an enlarged schematic cross-sectional view of region A2 of

[0047] Figure 8 is Figure 6 an enlarged schematic cross-sectional view of region A3 of

[0048] Figure 9 is a schematic plan view illustrating a schematic arrangement of a first color filter and a dummy layer of a color filter member included in a light-transmitting unit of a display device according to an embodiment;

[0049] Figure 10 is a schematic plan view schematically showing an arrangement of a second color filter and a dummy layer of a color filter member included in a light-transmitting unit of a display device according to an embodiment;

[0050] Figure 11 is a schematic plan view schematically showing an arrangement of a third color filter and a dummy layer of a color filter member included in a light-transmitting unit of a display device according to an embodiment;

[0051] Figure 12 is a schematic diagram of an equivalent circuit of a pixel circuit of a display device according to an embodiment;

[0052] Figure 13 is Figure 3 another schematic plan view of region A1 of Figure 3 and a schematic plan view of a light-emitting unit and a dummy layer included in a display device of

[0053] Figure 14 is Figure 3 another schematic plan view of region A1 of Figure 3 and a schematic plan view of a light-emitting unit and a dummy layer included in a display device of

[0054] Figure 15 is Figure 3 another schematic plan view of region A1 of Figure 3 and a schematic plan view of a light-emitting unit and a dummy layer included in a display device of

[0055] Figures 16 to 22 is a cross-sectional view for explaining a method of manufacturing a display device according to an embodiment;

[0056] Figure 23 is a schematic diagram for explaining an effect of preventing lateral leakage current between adjacent pixels through a dummy layer in a display device according to an embodiment;

[0057] Figure 24 is a chromaticity distribution diagram;

[0058] Figure 25 illustrates peaks of each wavelength of a display device according to an embodiment; and

[0059] Figure 26 is a focused ion beam (FIB) image of a dummy layer of a display device according to an embodiment. Detailed Description

[0060] In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various embodiments or implementations of the present invention. As used herein, "embodiment" and "implementation" are interchangeable words as non-limiting examples of the apparatus or method disclosed herein. However, it will be apparent that the various embodiments may be practiced without these specific details or with one or more equivalent arrangements. In this document, the various embodiments need not be exclusive nor limit the disclosure. For example, the specific shape, configuration, and characteristics of one embodiment may be used or implemented in another embodiment.

[0061] Unless otherwise stated, the illustrated embodiments should be understood to provide the features of the present invention. Thus, unless otherwise stated, the features, components, modules, layers, films, panels, regions, and / or aspects, etc. (hereinafter, individually or collectively referred to as "elements") of the various embodiments may be combined, separated, interchanged, and / or rearranged in other ways without departing from the scope of the present invention.

[0062] The use of cross-hatching and / or shading in the drawings is generally provided to clarify the boundaries between adjacent elements. Thus, unless otherwise stated, the presence or absence of cross-hatching or shading does not convey or indicate any preference or requirement for a particular material, material property, size, scale, commonality between the illustrated elements, and / or any other characteristic, attribute, property, etc. In addition, in the drawings, the sizes and relative sizes of elements may be exaggerated for clarity and / or for descriptive purposes. When the embodiments may be implemented differently, a particular process order may be performed differently from the order described. For example, two consecutively described processes may be performed substantially simultaneously or in an order opposite to the order described. In addition, like reference numerals denote like elements.

[0063] When an element or layer is referred to as being "on", "connected to", or "coupled to" another element or layer, it can be directly on, connected to, or coupled to the other element or layer, or intervening elements or layers may be present. However, when an element or layer is referred to as being "directly on", "directly connected to", or "directly coupled to" another element or layer, no intervening elements or layers are present. For this reason, the term "connected" can refer to physical, electrical, and / or fluid connections with or without intervening elements. Additionally, the axes of the first direction DR1, the second direction DR2, and the third direction DR3 are not limited to the three axes such as the X-axis, Y-axis, and Z-axis of a rectangular coordinate system and can be interpreted in a broader sense. For example, the axes of the first direction DR1, the second direction DR2, and the third direction DR3 can be perpendicular to each other, or can represent different directions that are not perpendicular to each other. For the purposes of this disclosure, "at least one of A and B" can be understood to mean only A, only B, or any combination of A and B. Additionally, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" can be interpreted to mean only X, only Y, only Z, or any combination of two or more of X, Y, and Z. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0064] Although terms such as "first", "second", etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Thus, the first element discussed below could be termed the second element without departing from the teachings of this disclosure.

[0065] Spatial relative terms such as "beneath", "below", ", "under", "above", "on", "over", "higher", "side" (e.g., in "sidewall") etc. may be used herein for descriptive purposes to describe the relationship of one element to another as shown in the figures. In addition to the orientation depicted in the figures, the spatial relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture. For example, if the device in the figures is flipped, an element described as "beneath" or "below" other elements or features will be oriented "above" the other elements or features. Thus, the term "below" can include both above and below orientations. Additionally, the device can be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and thus the spatial relative descriptors used herein should be interpreted accordingly.

[0066] The terms used in this document are for the purpose of describing particular embodiments and are not limiting. As used herein, unless the context clearly dictates otherwise, the singular forms "a" and "the" are intended to include the plural forms as well. Additionally, when used in this specification, the term "comprising" specifies the presence of the stated features, integers, steps, operations, elements, components, and / or groups thereof, but does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. It should also be noted that, as used herein, the terms "substantially", "about", and other similar terms are used as approximate terms and not as terms of degree, and are thus used to account for the inherent deviations of measured, calculated, and / or provided values that would be recognized by a person of ordinary skill in the art.

[0067] Various embodiments are described herein with reference to sectional views and / or exploded views, which are schematic views of the embodiments and / or intermediate structures. Accordingly, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and / or tolerances are to be expected. Thus, the embodiments disclosed herein are not necessarily to be construed as limited to the particular shapes of the regions shown, but include shape deviations resulting from, for example, manufacturing. In this way, the regions shown in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and are thus not necessarily intended to be limiting.

[0068] Hereinafter, embodiments will be described with reference to the accompanying drawings.

[0069] Figure 1 is a schematic perspective view of a display device 1 according to an embodiment. Figure 2 is along Figure 1 a schematic sectional view taken along line X1-X1'. Figure 3 is a schematic plan view of a display device 1 according to an embodiment.

[0070] Referring to Figure 1 and Figure 2 , the display device 1 according to an embodiment can be applied to portable electronic devices such as mobile phones, smartphones, tablet personal computers (PCs), mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigation devices, and ultra-mobile PCs (UMPCs). In another example, the display device 1 according to an embodiment can be applied as a display unit of a television, a laptop computer, a monitor, a billboard, or an Internet of Things (IoT) device. However, these are presented only as examples, and the display device 1 according to an embodiment can also be implemented in other electronic devices.

[0071] In Figure 1In this context, a first direction DR1, a second direction DR2, and a third direction DR3 are defined. The first direction DR1 and the second direction DR2 may be perpendicular to each other, the first direction DR1 and the third direction DR3 may be perpendicular to each other, and the second direction DR2 and the third direction DR3 may be perpendicular to each other. It can be understood that the first direction DR1 refers to the vertical direction in the drawing, the second direction DR2 refers to the horizontal direction in the drawing, and the third direction DR3 refers to the up-down direction in the drawing, such as the thickness direction. In the following description, unless otherwise specified, "direction" may refer to the direction extending to both sides (e.g., opposite sides) along that direction (e.g., opposite direction). For example, in the case where it is necessary to distinguish the "direction" extending to both sides (e.g., opposite sides), one side will be referred to as "the first side in that direction", and the other side will be referred to as "the second side in that direction". Based on Figure 1 , the direction pointed by the arrow will be referred to as the first side, and the direction opposite to this direction will be referred to as the second side.

[0072] For convenience of description, when referring to the surface of the display device 1 or each component constituting the display device 1, the surface facing the first side in the direction in which an image is displayed thereon (e.g., in the third direction DR3) will be referred to as the upper surface, and the other surface opposite to this surface will be referred to as the lower surface. However, the embodiments are not limited thereto, and the surface and the other surface of each component may also be referred to as the front surface and the rear surface or the first surface and the second surface, respectively. For example, when describing the relative positions of the components of the display device 1, the first side in the third direction DR3 may be referred to as the upper side, and the second side in the third direction DR3 may be referred to as the lower side.

[0073] The display device 1 may have a three-dimensional (3D) shape. For example, the display device 1 may have a rectangular parallelepiped shape or a 3D shape similar to a rectangular parallelepiped shape. In some embodiments, in a plan view, the display device 1 may have a planar shape similar to a quadrilateral. For example, as Figure 1 shown, in a plan view, the display device 1 according to an embodiment may have a planar shape similar to a quadrilateral, having a short side in the first direction DR1 and a long side in the second direction DR2. However, the embodiments are not limited thereto. For example, in the planar shape of the display device 1 according to an embodiment, each corner where the short side extending in the first direction DR1 intersects the long side extending in the second direction DR2 may be rounded with a predetermined curvature or may be a right angle. The planar shape of the display device 1 is not limited to a quadrilateral shape, but may also be similar to other polygonal shapes, circular shapes, or elliptical shapes.

[0074] The display device 1 may include a display area DA of a display screen and a non-display area NDA where the screen is not displayed. In some embodiments, the non-display area NDA may surround an edge portion of the display area DA, but the embodiments are not limited thereto. A user may view an image displayed in the display area DA from a first side on a third direction DR3 based on Figure 1 and view the image displayed in the display area DA from a first side on a third direction DR3.

[0075] As Figure 2 shown, the display device 1 may include a light-emitting unit 100 and a color filter unit 300 facing the light-emitting unit 100, and may further include a sealing member 700 that combines the light-emitting unit 100 and the color filter unit 300 and a filling member 500 that fills a space between the light-emitting unit 100 and the color filter unit 300.

[0076] The light-emitting unit 100 may include elements and circuits for displaying an image. For example, a pixel circuit such as a switching element, a pixel defining layer 170 that defines a light-emitting area and a non-light-emitting area in the display area DA to be described later, and a self-luminous element. In one embodiment, the self-luminous element may include at least one of an organic light-emitting diode, a quantum dot light-emitting diode, a micro light-emitting diode based on an inorganic material (e.g., a micro LED), and a nano light-emitting diode based on an inorganic material (e.g., a nano LED). For convenience of description, the case where the self-luminous element is an organic light-emitting diode will be described as an example below. For example, the light-emitting unit 100 may include a light-transmitting member (e.g., a first wavelength conversion layer TPL, a second wavelength conversion layer WCL1, and a third wavelength conversion layer WCL2 as shown in Figure 6 ) for converting the color of incident light emitted from the above-described self-luminous element and irradiated onto the color filter unit 300. In some embodiments, as will be described later, the light-transmitting member may include at least any one of a wavelength conversion shifter and a light scatterer.

[0077] The color filter unit 300 may be located on the light-emitting unit 100 and may face the light-emitting unit 100. In some embodiments, the color filter unit 300 may include a color conversion pattern for converting the color of incident light provided from the light-emitting unit 100. In some embodiments, the color filter unit 300 may include a color filter member 320 to be described later as the color conversion pattern.

[0078] The sealing member 700 may be located between the light-emitting unit 100 and the color filter unit 300 in the non-display area NDA. In a plan view, the sealing member 700 may be disposed along an edge portion of the light-emitting unit 100 and the color filter unit 300 in the non-display area NDA to surround the display area DA. The light-emitting unit 100 and the color filter unit 300 may be combined with each other through the sealing member 700.

[0079] In some embodiments, the sealing member 700 may be made of an organic material. For example, the sealing member 700 may be made of epoxy resin, but the embodiments are not limited thereto. In some embodiments, the sealing member 700 may be applied in the form of a frit including glass and the like.

[0080] The filling member 500 may be located in the space between the light emitting unit 100 and the color filter unit 300 and be surrounded by the sealing member 700. The filling member 500 may fill the space between the light emitting unit 100 and the color filter unit 300.

[0081] In some embodiments, the filling member 500 may be made of a material that can transmit light. In some embodiments, the filling member 500 may be made of an organic material. For example, the filling member 500 may be made of a silicone-based organic material, an epoxy-based organic material, or a mixture of a silicone-based organic material and an epoxy-based organic material.

[0082] Figure 3 is a schematic plan view of a display device 1 according to an embodiment.

[0083] Reference Figure 3 , the display device 1 may further include a flexible printed circuit board FPC and a driving chip IC.

[0084] The non-display area NDA of the display device 1 may include a pad area PDA, and connection pads PD may be located in the pad area PDA. The pad area PDA may be defined on the light emitting unit 100. Accordingly, the connection pads PD may be disposed on the light emitting unit 100.

[0085] The flexible printed circuit board FPC may be connected to the connection pads PD. The flexible printed circuit board FPC may electrically connect the light emitting unit 100 to a circuit board that provides signals and power for driving the display device 1.

[0086] The driving chip IC may be electrically connected to the circuit board to receive data and signals. In some embodiments, the driving chip IC may be a data driving chip IC and may receive a data control signal and image data from the circuit board and generate and output a data voltage corresponding to the image data.

[0087] In some embodiments, the driving chip IC may be mounted on the flexible printed circuit board FPC. For example, the driving chip IC may be mounted on the flexible printed circuit board FPC in the form of a chip on film (COF).

[0088] As will be described later, the data voltage provided from the driving chip IC, the power provided from the circuit board, etc. may be transmitted to the pixel circuit of the light emitting unit 100 via the flexible printed circuit board FPC and the connection pads PD.

[0089] Now, the light-emitting regions defined in the light-emitting unit 100 of the display device 1 and the light-transmitting regions defined in the color filter unit 300 will be described in more detail.

[0090] Figure 4 is Figure 3 an enlarged schematic plan view of region A1 and is a schematic plan view of the light-emitting unit 100 and the dummy layer DML included in the Figure 3 display device 1. Figure 5 is Figure 3 an enlarged schematic plan view of region A1 and a schematic plan view of the light-transmitting unit and the dummy layer DML included in the Figure 3 display device 1.

[0091] Figure 6 is Figure 4 and Figure 5 a schematic cross-sectional view taken along line X2-X2'. Figure 7 is Figure 6 an enlarged schematic cross-sectional view of region A2. Figure 8 is Figure 6 an enlarged cross-sectional view of region A3. Figure 9 is a schematic plan view illustrating a schematic arrangement of the first color filter 321 of the color filter member 320 and the dummy layer DML included in the light-transmitting unit of the display device 1 according to an embodiment. Figure 10 is a schematic plan view illustrating a schematic arrangement of the second color filter 322 of the color filter member 320 and the dummy layer DML included in the light-transmitting unit of the display device 1 according to an embodiment. Figure 11 is a schematic plan view illustrating a schematic arrangement of the third color filter 323 of the color filter member 320 and the dummy layer DML included in the light-transmitting unit of the display device 1 according to an embodiment.

[0092] Except for Figure 3 with reference to Figures 4 to 6 a light-emitting region can be defined in the light-emitting unit 100 of the display device 1 according to an embodiment, and a light-transmitting region can be defined in the color filter unit 300.

[0093] The display area DA and the non-display area NDA defined in the display device 1 can be applied to the light-emitting unit 100 and the color filter unit 300.

[0094] As Figure 4As shown, a first light-emitting region ELA_1, a second light-emitting region ELA_2, and a third light-emitting region ELA_3 may be defined in the display area DA of the light-emitting unit 100. The first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may be regions where light generated by the light-emitting elements of the light-emitting unit 100 is emitted to the outside of the light-emitting unit 100. The non-light-emitting region NELA may be a region where light is not emitted to the outside of the light-emitting unit 100. In some embodiments, the non-light-emitting region NELA may surround the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 in the display area DA, but the embodiments are not limited thereto.

[0095] In some embodiments, the light emitted to the outside from the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may be light of a first color. In some embodiments, the light of the first color may be blue light and may have a peak wavelength in the range of about 440 nm to about 480 nm. For example, the peak wavelength refers to the wavelength at which the light intensity is the greatest.

[0096] In some embodiments, as Figure 4 shown, the third light-emitting region ELA_3 and the second light-emitting region ELA_2 may be sequentially positioned along a second direction DR2. The first light-emitting region ELA_1 may be located on one side of the space between the third light-emitting region ELA_3 and the second light-emitting region ELA_2. The first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may form a group.

[0097] As Figure 3 shown, a group formed by the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may be repeatedly arranged in the display area DA along a first direction DR1 and a second direction DR2. However, the embodiments are not limited thereto. For example, the arrangement of the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may be changed in various ways. Therefore, the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may also be sequentially positioned along the second direction DR2. For convenience of description, the case where the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 are arranged as Figure 4 shown will be described below as an example.

[0098] In some embodiments, the area (or size) of the first light-emitting region ELA_1, the area (or size) of the second light-emitting region ELA_2, and the area (or size) of the third light-emitting region ELA_3 may be substantially the same. However, the embodiments are not limited thereto. For example, the area (or size) of the first light-emitting region ELA_1, the area (or size) of the second light-emitting region ELA_2, and the area (or size) of the third light-emitting region ELA_3 may also be different from each other. In some embodiments, the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may have a polygonal planar shape, but the embodiments are not limited thereto. For convenience of description, the following example will be described: wherein the second light-emitting region ELA_2 and the third light-emitting region ELA_3 have a quadrilateral planar shape and have substantially the same area, and the first light-emitting region ELA_1 has a pentagonal planar shape and has an area smaller than the area of the second light-emitting region ELA_2 (or the third light-emitting region ELA_3).

[0099] A first light-transmitting region TA_1, a second light-transmitting region TA_2, and a third light-transmitting region TA_3 may be defined in the display area DA of the color filter unit 300. The first light-transmitting region TA_1, the second light-transmitting region TA_2, and the third light-transmitting region TA_3 may be regions through which light generated from the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 of the light-emitting unit 100 is transmitted. The light-shielding region BA may be located around the first light-transmitting region TA_1, the second light-transmitting region TA_2, and the third light-transmitting region TA_3 in the display area DA of the color filter unit 300. In some embodiments, the light-shielding region BA may surround the first light-transmitting region TA_1, the second light-transmitting region TA_2, and the third light-transmitting region TA_3. However, the embodiments are not limited thereto. For example, the light-shielding region BA may be located in the non-display area NDA as well as the display area DA of the color filter unit 300.

[0100] The first light-transmitting region TA_1 may correspond to (or overlap with) the first light-emitting region ELA_1, the second light-transmitting region TA_2 may correspond to (or overlap with) the second light-emitting region ELA_2, and the third light-transmitting region TA_3 may correspond to (or overlap with) the third light-emitting region ELA_3. In some embodiments, the first light-transmitting region TA_1 may have an area substantially the same as that of the first light-emitting region ELA_1 and overlap with the first light-emitting region ELA_1 (e.g., completely overlap), the second light-transmitting region TA_2 may have an area substantially the same as that of the second light-emitting region ELA_2 and overlap with the second light-emitting region ELA_2 (e.g., completely overlap), and the third light-transmitting region TA_3 may have an area substantially the same as that of the third light-emitting region ELA_3 and overlap with the third light-emitting region ELA_3 (e.g., completely overlap). However, the embodiments are not limited thereto. For example, the first light-transmitting region TA_1 may also have an area different from that of the first light-emitting region ELA_1, the second light-transmitting region TA_2 may also have an area different from that of the second light-emitting region ELA_2, and the third light-transmitting region TA_3 may also have an area different from that of the third light-emitting region ELA_3. For convenience of description, the following will describe the following situation: where the first light-transmitting region TA_1 has an area substantially the same as that of the first light-emitting region ELA_1 and overlaps with the first light-emitting region ELA_1 (e.g., completely overlap), the second light-transmitting region TA_2 has an area substantially the same as that of the second light-emitting region ELA_2 and overlaps with the second light-emitting region ELA_2 (e.g., completely overlap), and the third light-transmitting region TA_3 has an area substantially the same as that of the third light-emitting region ELA_3 and overlaps with the third light-emitting region ELA_3 (e.g., completely overlap).

[0101] Accordingly, the third light-transmitting region TA_3 and the second light-transmitting region TA_2 may be sequentially positioned along the second direction DR2. The first light-transmitting region TA_1 may be located on one side of the space between the third light-transmitting region TA_3 and the second light-transmitting region TA_2. The first light-transmitting region TA_1, the second light-transmitting region TA_2, and the third light-transmitting region TA_3 may form a group. As Figure 3 shown, a group formed by the first light-transmitting region TA_1, the second light-transmitting region TA_2, and the third light-transmitting region TA_3 may be repeatedly arranged in the display area DA along the first direction DR1 and the second direction DR2.

[0102] As described above, the light of the first color emitted from the light-emitting unit 100 can be provided to the outside of the display device 1 through the first light-transmitting region TA_1, the second light-transmitting region TA_2, and the third light-transmitting region TA_3. The light output to the outside of the display device 1 from the first light-transmitting region TA_1 can be referred to as the first output light, the light output to the outside of the display device 1 from the second light-transmitting region TA_2 can be referred to as the second output light, and the light output to the outside of the display device 1 from the third light-transmitting region TA_3 can be referred to as the third output light. For example, the first output light can be light of the first color, the second output light can be light of the second color, and the third output light can be light of the third color.

[0103] In some embodiments, the light of the first color can be blue light having a peak wavelength in the range of about 440 nm to about 480 nm as described above, and the light of the second color can be green light having a peak wavelength in the range of about 510 nm to about 550 nm. For example, the light of the third color can be red light having a peak wavelength in the range of about 610 nm to about 650 nm.

[0104] As Figure 4 shown, in a plan view, the dummy layer DML can be disposed in the non-light-emitting region NELA. In some embodiments, in a plan view, the dummy layer DML can be disposed around the first light-emitting region ELA_1 to the third light-emitting region ELA_3. In some embodiments, the dummy layer DML can be disposed in a boundary portion between the first light-emitting region ELA_1 to the third light-emitting region ELA_3 that form a group. For example, the dummy layer DML can include a first sub-dummy layer SDML1 and a second sub-dummy layer SDML2. In a plan view, the first sub-dummy layer SDML1 can be disposed between the first light-emitting region ELA_1 and the second light-emitting region ELA_2 and between the first light-emitting region ELA_1 and the third light-emitting region ELA_3. For example, the second sub-dummy layer SDML2 can be disposed between the second light-emitting region ELA_2 and the third light-emitting region ELA_3. According to an embodiment, in a plan view, the dummy layer DML can have a line shape.

[0105] According to some embodiments, the first dummy layer SDML1 may have a U-shaped form surrounding all surfaces (or at least one surface) of the first light-emitting area ELA_1, and the second dummy layer SDML2 may have an L-shaped form facing two adjacent surfaces of the third light-emitting area ELA_3 (e.g., an L-shaped form inverted by approximately 180 degrees with respect to the first direction DR1). For example, as described above, at least a portion of the U-shaped first dummy layer SDML1 may be disposed between the first light-emitting area ELA_1 and the second light-emitting area ELA_2 and between the first light-emitting area ELA_1 and the third light-emitting area ELA_3. For example, as described above, at least a portion of the inverted L-shaped second dummy layer SDML2 may be disposed between the second light-emitting area ELA_2 and the third light-emitting area ELA_3.

[0106] As Figure 5 shown, in a plan view, the above-described dummy layer DML may be disposed in the light-shielding area BA. In some embodiments, the dummy layer DML may be disposed in a boundary portion between the first light-transmitting area TA_1 to the third light-transmitting area TA_3 that form a group. For example, as described above, the dummy layer DML may include the first dummy layer SDML1 and the second dummy layer SDML2. The first dummy layer SDML1 may be disposed between the first light-transmitting area TA_1 and the second light-transmitting area TA_2 and between the first light-transmitting area TA_1 and the third light-transmitting area TA_3. For example, the second dummy layer SDML2 may be disposed between the second light-transmitting area TA_2 and the third light-transmitting area TA_3.

[0107] According to some embodiments, the first dummy layer SDML1 may have a U-shaped form surrounding all surfaces (or at least one surface) of the first light-transmitting area TA_1, and the second dummy layer SDML2 may have an L-shaped form facing two adjacent surfaces of the third light-transmitting area TA_3 (e.g., an L-shaped form inverted by approximately 180 degrees with respect to the first direction DR1). For example, as described above, at least a portion of the U-shaped first dummy layer SDML1 may be disposed between the first light-transmitting area TA_1 and the second light-transmitting area TA_2 and between the first light-transmitting area TA_1 and the third light-transmitting area TA_3. For example, as described above, at least a portion of the inverted L-shaped second dummy layer SDML2 may be disposed between the second light-transmitting area TA_2 and the third light-transmitting area TA_3.

[0108] Now, the structure of the display device 1 will be described in detail.

[0109] Reference Figure 6, as described above, the display device 1 may include a light-emitting unit 100, a color filter unit 300 disposed on the light-emitting unit 100 to face the light-emitting unit 100, and a filler 500 interposed between the light-emitting unit 100 and the color filter unit 300. For convenience of description, the light-emitting unit 100, the color filter unit 300, and the filler 500 will be described in this order below.

[0110] The light-emitting unit 100 may have a structure in which a first substrate 110, a buffer layer 120, a bottom metal layer BML, a first insulating layer 130, a semiconductor layer ACT, a gate electrode GE, a gate insulating layer 140, a second insulating layer 150, source / drain electrodes, a third insulating layer 160, a light-emitting element, a pixel defining layer 170, a dummy layer DML, a first capping layer CPL1, a thin film encapsulation layer TFE, and a wavelength conversion member WC are sequentially stacked on a first side in a third direction DR3.

[0111] The first substrate 110 of the light-emitting unit 100 may serve as a base of the light-emitting unit 100. The first substrate 110 may be made of a light-transmitting material. The first substrate 110 may be a glass substrate or a plastic substrate. When the first substrate 110 is a plastic substrate, it may be flexible. In some embodiments, when the first substrate 110 is a plastic substrate, it may include polyimide. However, the embodiments are not limited thereto.

[0112] The buffer layer 120 of the light-emitting unit 100 may be disposed on the first substrate 110. The buffer layer 120 may block foreign substances or moisture introduced through the first substrate 110 from entering the elements disposed on the buffer layer 120.

[0113] In some embodiments, the buffer layer 120 may include an inorganic material such as SiO2, SiN x or SiON and may be formed as a single layer or multiple layers, but the embodiments are not limited thereto.

[0114] The bottom metal layer BML of the light-emitting unit 100 may be disposed on the buffer layer 120. The bottom metal layer BML may block external light or light emitted from the light-emitting element to be described later from entering the semiconductor layer ACT. Accordingly, generation of leakage current due to light in the thin film transistor to be described later may be prevented or generation of leakage current may be reduced.

[0115] The bottom metal layer BML can be made of a light-shielding and conductive material. In some embodiments, the bottom metal layer BML can include a single material selected from metals such as silver (Ag), nickel (Ni), gold (Au), platinum (Pt), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), and neodymium (Nd), or can include an alloy of these metals. In some embodiments, the bottom metal layer BML can have a single-layer structure or a multi-layer structure. For example, in the case where the bottom metal layer BML has a multi-layer structure, each layer in the bottom metal layer BML can be a stacked structure of titanium (Ti) / copper (Cu) / indium tin oxide (ITO) or a stacked structure of titanium (Ti) / copper (Cu) / aluminum oxide (Al2O3). However, the embodiments are not limited thereto.

[0116] In some embodiments, the bottom metal layer BML can correspond to and overlap with the semiconductor layer ACT respectively. In some embodiments, the bottom metal layer BML can be wider than the semiconductor layer ACT.

[0117] In some embodiments, the bottom metal layer BML can be a data line, a power line, and a part of a line that electrically connects thin film transistors not shown in the drawings to the thin film transistors ( Figure 6 GE, ACT, DE, and SE) shown in the drawings. In some embodiments, the bottom metal layer BML can be made of a material having a resistance smaller than that of the source electrode SE and the drain electrode DE.

[0118] The first insulating layer 130 of the light-emitting unit 100 can be disposed on the bottom metal layer BML. The first insulating layer 130 can electrically insulate the bottom metal layer BML from the semiconductor layer ACT. The first insulating layer 130 can cover the bottom metal layer BML.

[0119] In some embodiments, the first insulating layer 130 can include an inorganic material such as SiO2, SiN x , SiON, Al2O3, TiO2, Ta2O, HfO2, or ZrO2. However, the embodiments are not limited thereto.

[0120] The semiconductor layer ACT of the light-emitting unit 100 can be disposed on the first insulating layer 130. The semiconductor layer ACT can correspond to (or overlap with) the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 in the display region DA of the light-emitting unit 100 respectively. For example, the semiconductor layer ACT can overlap with the bottom metal layer BML respectively. Therefore, the generation of photocurrent in the semiconductor layer ACT can be suppressed.

[0121] The semiconductor layer ACT may include an oxide semiconductor. In some embodiments, each of the semiconductor layers ACT may be made of a zinc oxide-based material such as zinc oxide, indium zinc oxide, or indium gallium zinc oxide, or may be an indium gallium zinc oxide (IGZO) semiconductor including metals such as indium (In) and gallium (Ga) in ZnO. However, the embodiments are not limited thereto. For example, the semiconductor layer ACT may also include amorphous silicon or polycrystalline silicon.

[0122] The gate electrode GE of the light-emitting unit 100 may be disposed on the semiconductor layer ACT. The gate electrode GE may overlap with the semiconductor layer ACT in the display area DA. In some embodiments, the gate electrode GE may be narrower than the semiconductor layer ACT, but the embodiments are not limited thereto.

[0123] In some embodiments, each of the gate electrodes GE may include one or more of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) and may be formed as a single layer or multiple layers, but the embodiments are not limited thereto.

[0124] The gate insulating layer 140 of the light-emitting unit 100 may be disposed between the semiconductor layer ACT and the gate electrode GE. The gate insulating layer 140 may insulate the semiconductor layer ACT from the gate electrode GE. In some embodiments, the gate insulating layer 140 may have a partially patterned shape on the surface of the first substrate 110 on the first side in the third direction DR3, rather than being formed as a single layer. The gate insulating layer 140 may be narrower than the semiconductor layer ACT and may be wider than the gate electrode GE, but the embodiments are not limited thereto.

[0125] In some embodiments, the gate insulating layer 140 may include an inorganic material. For example, the gate insulating layer 140 may include one of the inorganic materials mentioned in the description of the first insulating layer 130.

[0126] The second insulating layer 150 of the light-emitting unit 100 may be disposed on the gate insulating layer 140 to cover the semiconductor layer ACT and the gate electrode GE. In some embodiments, the second insulating layer 150 may function as a planarization layer providing a flat surface.

[0127] The second insulating layer 150 may include an organic material. In some embodiments, the second insulating layer 150 may include at least any one of photosensitive acrylic (PAC), polystyrene, polymethyl methacrylate (PMMA), polyacrylonitrile (PAN), polyamide, polyimide, polyarylether, heterocyclic polymer, parylene, fluoropolymer, epoxy resin, benzocyclobutene series resin, silicone series resin, and silane resin. However, the embodiments are not limited thereto.

[0128] The source electrode SE and the drain electrode DE of the light emitting unit 100 may be spaced apart from each other on the second insulating layer 150. The source electrode SE and the drain electrode DE may be respectively connected to the semiconductor layer ACT through contact holes penetrating the second insulating layer 150. In some embodiments, the source electrode SE may penetrate the first insulating layer 130 as well as the second insulating layer 150, and thus may be connected to the bottom metal layer BML. In the case where the bottom metal layer BML is a part of a line for transmitting a signal or a voltage, the source electrode SE may be connected and electrically coupled to the bottom metal layer BML to receive the voltage provided to the line. In another example, in the case where the bottom metal layer BML is a floating pattern rather than a line, the voltage provided to the source electrode SE may be transmitted to the bottom metal layer BML.

[0129] Each of the source electrode SE and the drain electrode DE may include aluminum (Al), copper (Cu), titanium (Ti), etc., and may be formed as a multi-layer or a single layer. In some embodiments, the source electrode SE and the drain electrode DE may have a multi-layer structure of Ti / Al / Ti. However, the embodiments are not limited thereto.

[0130] The above semiconductor layer ACT, gate electrode GE, source electrode SE, and drain electrode DE may form a thin film transistor as a switching element. In some embodiments, the thin film transistors may be respectively located in the first light emitting region ELA_1, the second light emitting region ELA_2, and the third light emitting region ELA_3. In some embodiments, a part of each of the thin film transistors may be located in the non-light emitting region NELA.

[0131] The third insulating layer 160 of the light emitting unit 100 may be disposed on the second insulating layer 150 to cover the thin film transistor. In some embodiments, the third insulating layer 160 may be a planarization layer.

[0132] The third insulating layer 160 may be made of an organic material. In some embodiments, the third insulating layer 160 may include an acrylic resin, an epoxy resin, an imide resin, or an ester resin or may include a photosensitive organic material, but the embodiments are not limited thereto.

[0133] The anode ANO (or the first electrode) may be located on the third insulating layer 160 in the display area DA of the light emitting unit 100.

[0134] The anode ANO can overlap with the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 respectively, and at least a part of each of the anodes ANO can extend into the non-light-emitting region NELA. The anode ANO can be connected to the drain electrode DE of the thin-film transistor.

[0135] In some embodiments, the anode ANO can be a reflective electrode. For example, each of the anodes ANO can be a metal layer including a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, or Cr. In one embodiment, each of the anodes ANO can further include a metal oxide layer stacked on the metal layer. In one embodiment, the anode ANO can have a multi-layer structure such as a two-layer structure of ITO / Ag, Ag / ITO, ITO / Mg, or ITO / MgF2 or a three-layer structure of ITO / Ag / ITO.

[0136] The pixel defining layer 170 of the light-emitting unit 100 can be disposed on the anode ANO. The pixel defining layer 170 can define the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 as openings exposing the anode ANO. For example, the pixel defining layer 170 can include openings that expose the anode ANO and correspond to (or overlap with) the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3.

[0137] The pixel defining layer 170 can overlap with the light-shielding region BA of the color filter member 320, which will be described later, in the third direction DR3. For example, the pixel defining layer 170 can overlap with the bank member BK, which will be described later, in the third direction DR3.

[0138] In some embodiments, the pixel defining layer 170 can include an organic insulating material such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, or benzocyclobutene (BCB). However, the embodiments are not limited thereto.

[0139] As Figure 6 and Figure 7 shown, the dummy layer DML of the light-emitting unit 100 can be disposed on the pixel defining layer 170. The dummy layer DML can overlap with the pixel defining layer 170 and contact the pixel defining layer 170. At least one side surface of the dummy layer DML can have an arc-shaped cross section. According to one embodiment, the dummy layer DML can have an elliptical cross section. The dummy layer DML can be made of a material including an organic material. For example, the dummy layer DML can include a negative-type organic material cured by at least one of ultraviolet light and heat.

[0140] In some embodiments, the dummy layer DML may have a specific color. For example, the dummy layer DML may have a red color. In an embodiment for this purpose, the dummy layer DML may include a red colorant. As used herein, the term "colorant" is a concept that includes both dyes and pigments. In one embodiment, the dummy layer DML may be made of an organic material layer including a red colorant. However, the embodiments are not limited thereto, and the dummy layer DML may also have any color different from red, such as green, blue, and black. In one embodiment, the dummy layer DML may be made of the same material as any one of the first color filter 321, the second color filter 322, the third color filter 323, and the light-shielding pattern portion BM to be described later.

[0141] As Figure 7 shown, the upper surface UP and the lower surface LW of the dummy layer DML may face (or be opposite to) each other in the third direction DR3. The first side surface S1 of the dummy layer DML may be disposed between one side of the upper surface UP and one side of the lower surface LW, and the second side surface S2 of the dummy layer DML may be disposed between the other side of the upper surface UP and the other side of the lower surface LW. Each of the first side surface S1 and the second side surface S2 of the dummy layer DML may have a circular shape. For example, the first side surface S1 and the second side surface S2 may be symmetric about approximately 180 degrees with respect to the third direction DR3.

[0142] A hypothetical horizontal line LL that passes through the central portion of the dummy layer DML (e.g., the central portion of the first side surface S1 and the central portion of the second side surface S2) between the lower surface LW and the upper surface UP of the dummy layer DML and is substantially parallel to the lower surface LW (or the upper surface UP) of the dummy layer DML may be set. For example, the dummy layer DML may be defined as an upper dummy layer UD disposed above the hypothetical horizontal line LL and a lower dummy layer LD disposed below the hypothetical horizontal line LL.

[0143] The upper dummy layer UD may have a width that gradually decreases as it approaches the upper surface UP of the upper dummy layer UD along the third direction DR3, and the lower dummy layer LD may have a width that gradually increases as it moves away from the lower surface LW of the lower dummy layer LD along the third direction DR3. For example, the upper dummy layer UD may have a positive conical shape based on the third direction DR3, and the lower dummy layer LD may have an inverted conical shape based on the third direction DR3. For example, the width may refer to the dimension of the dummy layer DML in the first direction DR1 (or the second direction DR2).

[0144] The first angle θ1 between the first side surface S1 of the lower dummy layer LD and the upper surface of the pixel defining layer 170 may be defined as a first inverted cone angle, and the first inverted cone angle may be greater than about 30 degrees and less than about 90 degrees. Similarly, the second angle θ2 between the second side surface S2 of the lower dummy layer LD and the upper surface of the pixel defining layer 170 may be defined as a second inverted cone angle, and the second inverted cone angle may be greater than about 30 degrees and less than about 90 degrees.

[0145] The light-emitting layer OL of the light-emitting unit 100 may be disposed on the anode ANO. In some embodiments, the light-emitting layer OL may be in the form of a layer formed above the light-emitting regions ELA_1 to ELA_3 and the non-light-emitting region NELA. In some embodiments, the light-emitting layer OL may be located only in the display region DA. However, the embodiments are not limited thereto. For example, a part of the light-emitting layer OL may be further disposed in the non-display region NDA. For example, the light-emitting layer OL may be further disposed on the pixel defining layer 170 and the dummy layer DML.

[0146] In some embodiments, the dummy layer DML may have a thickness of about 1 μm to about 6 μm. For example, the thickness of the dummy layer DML may refer to the dimension (or thickness) of the dummy layer DML in the third direction DR3.

[0147] In some embodiments, a part of the light-emitting layer OL may be interrupted or disconnected. For example, at least a part of the light-emitting layer OL may be interrupted around the dummy layer DML. Accordingly, the light-emitting layer OL may be divided into a light-emitting layer portion (hereinafter, referred to as the main light-emitting layer MOL) continuously disposed on the anode ANO and the pixel defining layer 170, and a light-emitting layer portion disposed on the dummy layer DML (hereinafter, referred to as the dummy light-emitting layer DOL). For example, the main light-emitting layer MOL on the anode ANO and the dummy light-emitting layer DOL on the dummy layer DML may be physically separated from each other. This may be due to the dummy layer DML between the pixel defining layer 170 and the light-emitting layer OL. For example, since the lower dummy layer LD of the dummy layer DML has an inverted cone shape (or overhang shape) whose width gradually increases as it moves away from the lower surface LW of the lower dummy layer LD along the third direction DR3, the light-emitting layer OL may be divided into the main light-emitting layer MOL and the dummy light-emitting layer DOL (or spaced apart from the main light-emitting layer MOL and the dummy light-emitting layer DOL) by the inverted cone-shaped lower dummy layer LD. According to an embodiment, although the main light-emitting layer MOL is electrically connected to the anode ANO, the dummy light-emitting layer DOL may not be connected to the anode ANO. Accordingly, the voltage of the anode ANO may not be applied to the dummy light-emitting layer DOL.

[0148] According to some embodiments, a portion of the main light-emitting layer MOL adjacent to the dummy layer DML may be disposed on the pixel defining layer 170.

[0149] The light-emitting layer OL will be described in more detail later.

[0150] The cathode CE (or the second electrode) of the light-emitting unit 100 may be disposed on the light-emitting layer OL. In some embodiments, the cathode CE may be disposed on the light-emitting layer OL and may be in the form of a layer formed over the light-emitting regions ELA_1 to ELA_3 and the non-light-emitting region NELA. For example, the cathode CE may cover (e.g., completely cover) the light-emitting layer OL.

[0151] In some embodiments, a portion of the cathode CE may be interrupted (or separated). For example, at least a portion of the cathode CE may be interrupted around the dummy layer DML. Accordingly, the cathode CE may be divided into a cathode portion disposed on the main light-emitting layer MOL to overlap with the above-described anode ANO (hereinafter, referred to as the main cathode MCE) and a cathode portion disposed on the dummy light-emitting layer DOL to overlap with the above-described dummy layer DML (hereinafter, referred to as the dummy cathode DCE). For example, the main cathode MCE on the main light-emitting layer MOL and the dummy cathode DCE on the dummy light-emitting layer DOL may be physically separated (or spaced apart) from each other. This may be due to the dummy layer DML having an inverted conical shape as described above. According to an embodiment, although the main cathode MCE is electrically connected to a second voltage line to be described later, the dummy cathode DCE may not be connected to the second voltage line. Accordingly, a second voltage may not be applied to the dummy cathode DCE. For example, the second voltage line may be disposed, for example, under the cathode CE. The main cathode MCE may be connected to the second voltage line thereunder through a laser drill (or a kind of contact hole) penetrating the insulating layer.

[0152] The cathode CE may have semi-transparency or transparency. When the thickness of the cathode CE is several tens to several hundreds of angstroms , the cathode CE may have semi-transparency. In some embodiments, when the cathode CE has semi-transparency, it may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, or a compound thereof (e.g., LiF) or a mixture thereof (e.g., a mixture of Ag and Mg) or a material having a multi-layer structure such as LiF / Ca or LiF / Al. The cathode CE may also have transparency by including a transparent conductive oxide. In some embodiments, when the cathode CE has transparency, it may include tungsten oxide (W x O x ), titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or magnesium oxide (MgO).

[0153] The anode ANO, the light-emitting layer OL, and the cathode CE can form a light-emitting element. For example, the anode ANO, the light-emitting layer OL, and the cathode CE that overlap with the first light-emitting region ELA_1 can form a first light-emitting element, the anode ANO, the light-emitting layer OL, and the cathode CE that overlap with the second light-emitting region ELA_2 can form a second light-emitting element, and the anode ANO, the light-emitting layer OL, and the cathode CE that overlap with the third light-emitting region ELA_3 can form a third light-emitting element. Each of the first light-emitting element, the second light-emitting element, and the third light-emitting element can emit output light LE.

[0154] Reference Figure 8 , the output light LE finally emitted from the light-emitting layer OL (e.g., the main light-emitting layer MOL) can be a mixture of a first component LE1 and a second component LE2. Each of the first component LE1 and the second component LE2 in the output light LE can have a peak wavelength in the range of about 440 nm to less than about 480 nm. For example, the output light LE can be blue light.

[0155] In some embodiments, the light-emitting layer OL can have a structure in which light-emitting material layers overlap, such as the tandem structure shown in Figure 8 . For example, the light-emitting layer OL including the main light-emitting layer MOL and the dummy light-emitting layer DOL can have the above-described tandem structure. For example, the light-emitting layer OL can include a first stack ST1 including a first light-emitting material layer EML1, a second stack ST2 located on the first stack ST1 and including a second light-emitting material layer EML2, a third stack ST3 located on the second stack ST2 and including a third light-emitting material layer EML3, a first charge generation layer CGL1 located between the first stack ST1 and the second stack ST2, and a second charge generation layer CGL2 located between the second stack ST2 and the third stack ST3. The first stack ST1, the second stack ST2, and the third stack ST3 can overlap each other.

[0156] The first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 can overlap each other.

[0157] In some embodiments, the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 can all emit light of a first color, such as blue light. For example, each of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 can be a blue light-emitting layer and can include an organic material.

[0158] In some embodiments, at least any one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a first blue light having a first peak wavelength, and at least another one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a second blue light having a second peak wavelength different from the first peak wavelength. For example, any one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a first blue light having a first peak wavelength, and the other two of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a second blue light having a second peak wavelength. For example, the output light LE finally emitted from the light-emitting layer OL may be a mixture of a first component LE1 and a second component LE2. For example, the first component LE1 may be a first blue light having a first peak wavelength, and the second component LE2 may be a second blue light having a second peak wavelength.

[0159] In some embodiments, any one of the first peak wavelength and the second peak wavelength may be in the range of about 440 nm to about 460 nm. The other of the first peak wavelength and the second peak wavelength may be in the range of about 460 nm to about 480 nm. However, the ranges of the first peak wavelength and the second peak wavelength are not limited thereto. For example, the ranges of both the first peak wavelength and the second peak wavelength may include about 460 nm. In some embodiments, any one of the first blue light and the second blue light may be dark blue light, and the other of the first blue light and the second blue light may be sky blue light.

[0160] According to some embodiments, the output light LE emitted from the light-emitting layer OL may be blue light and may include a long-wavelength component and a short-wavelength component. Therefore, the light-emitting layer OL may finally emit blue light having a wider emission peak as the output light LE, thereby improving the color visibility at a side viewing angle as compared with a conventional light-emitting element that emits blue light having a sharp emission peak.

[0161] In some embodiments, each of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may include a host and a dopant. As long as the host is a commonly used material, it is not limited. However, for example, tris(8-hydroxyquinoline)aluminum (Alq3), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), poly(n-vinylcarbazole) (PVK), 9,10-bis(naphthalen-2-yl)anthracene (ADN), 4,4',4''-tris(carbazol-9-yl)-triphenylamine (TCTA), 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi), 3-tert-butyl-9,10-bis(naphthalen-2-yl)anthracene (TBADN), distyrylarylene (DSA), 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CDBP), or 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN) may be used.

[0162] Each of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 that emits blue light may include, for example, a fluorescent material including any one of spiro-DPVBi, spiro-6P, distyrylbenzene (DSB), distyrylarylene (DSA), polyfluorene (PFO)-based polymers, and poly(p-phenylene vinylene) (PPV)-based polymers. Again, for example, it may include a phosphorescent material including an organometallic complex such as (4,6-F2ppy)2Irpic.

[0163] As described above, at least one of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 and at least another of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 emit blue light in different wavelength ranges. To emit blue light in different wavelength ranges, the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may include the same material, and the resonance distance may be adjusted. In another example, to emit blue light in different wavelength ranges, at least one of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 and at least another of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may include different materials.

[0164] However, the embodiments are not limited thereto. The first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may also all emit blue light having a peak wavelength of about 440 nm to about 480 nm and may be made of the same material.

[0165] In another example, in one embodiment, at least any one of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may emit a first blue light having a first peak wavelength, another one of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may emit a second blue light having a second peak wavelength different from the first peak wavelength, and the remaining one of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may emit a third blue light having a third peak wavelength different from the first peak wavelength and the second peak wavelength. In some embodiments, any one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be in the range of about 440 nm to about 460 nm. Another one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be in the range of about 460 nm to less than about 470 nm, and the remaining one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be in the range of about 470 nm to about 480 nm.

[0166] According to some embodiments, the output light LE emitted from the light-emitting layer OL may be blue light and may include a long-wavelength component, a medium-wavelength component, and a short-wavelength component. Accordingly, the light-emitting layer OL may finally emit blue light having a wider emission peak as the output light LE and improve color visibility at a side viewing angle.

[0167] According to the above embodiments, compared with a conventional light-emitting element that does not adopt (or uses) a tandem structure (e.g., a structure in which light-emitting layers OL are stacked), the light efficiency can be improved and the lifespan of the display device 1 can be extended.

[0168] In another example, in some embodiments, at least any one of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may emit light of a first color such as blue light, and at least another one of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may emit light of a second color such as green light. In some embodiments, the blue light emitted from at least any one of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may have a peak wavelength in the range of about 440 nm to about 480 nm or about 460 nm to 480 nm. The green light emitted from at least another one of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may have a peak wavelength in the range of about 510 nm to about 550 nm.

[0169] For example, any one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may be a green light-emitting layer OL that emits green light, and the other two of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may be blue light-emitting layers OL that emit blue light. In the case where the other two of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 are blue light-emitting layers OL, the peak wavelengths of the blue light emitted from the two blue light-emitting layers OL may be in the same range or in different ranges.

[0170] According to some embodiments, the output light LE emitted from the light-emitting layer OL may be a mixture of a first component LE1 that is blue light and a second component LE2 that is green light. For example, in the case where the first component LE1 is deep blue light and the second component LE2 is green light, the output light LE may be light having a sky blue color. In the above embodiments, the output light LE emitted from the light-emitting layer OL may be a mixture of blue light and green light, and may include a long wavelength component and a short wavelength component. Therefore, the light-emitting layer OL may finally emit blue light having a wider emission peak as the output light LE, and improve color visibility at a side viewing angle. For example, since the second component LE2 of the output light LE is green light, the green light component may be supplemented in the light provided from the display device 1 to the outside. Therefore, the color reproducibility of the display device 1 may be improved.

[0171] In some embodiments, the green light-emitting material layer among the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may include a host and a dopant. As long as the host included in the green light-emitting material layer is a commonly used material, it is not limited. However, for example, tris(8-hydroxyquinoline)aluminum (Alq3), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), poly(n-vinylcarbazole) (PVK), 9,10-di(naphthalen-2-yl)anthracene (ADN), 4,4',4''-tris(carbazol-9-yl)-triphenylamine (TCTA), 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi), 3-tert-butyl-9,10-di(naphthalen-2-yl)anthracene (TBADN), stilbene-substituted arylene (DSA), 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CDBP), or 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN) may be used.

[0172] The dopant included in the green light-emitting material layer may be, for example, a fluorescent material including tris(8-hydroxyquinoline)aluminum(III) (Alq3), or may be a phosphorescent material such as Ir(ppy)3 (fac-tris(2-phenylpyridine)iridium), Ir(ppy)2(acac) (bis(2-phenylpyridine)(acetylacetonate)iridium(III)), or Ir(mpyp)3 (iridium(III) 2-phenyl-4-methylpyridine).

[0173] The first charge generation layer CGL1 may be located between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 may inject charges into each light-emitting layer OL. The first charge generation layer CGL1 may control the charge balance between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 may include an n-type charge generation layer CGL11 and a p-type charge generation layer CGL12. The p-type charge generation layer CGL12 may be located on the n-type charge generation layer CGL11 and may be located between the n-type charge generation layer CGL11 and the second stack ST2.

[0174] The first charge generation layer CGL1 may have a structure in which the n-type charge generation layer CGL11 and the p-type charge generation layer CGL12 are in contact with each other. Among the anode ANO and the cathode CE, the n-type charge generation layer CGL11 may be disposed close to the anode ANO. Among the anode ANO and the cathode CE, the p-type charge generation layer CGL12 may be disposed close to the cathode CE. The n-type charge generation layer CGL11 supplies electrons to the first light-emitting material layer EML1 adjacent to the anode ANO, and the p-type charge generation layer CGL12 supplies holes to the second light-emitting material layer EML2 included in the second stack ST2. Since the first charge generation layer CGL1 is disposed between the first stack ST1 and the second stack ST2 to supply charges to each light-emitting layer OL, the light-emitting efficiency can be improved and the driving voltage can be reduced.

[0175] In Figure 6 it, the anode ANO corresponding to the first light-emitting region ELA_1 may be defined as the first anode, the anode ANO corresponding to the second light-emitting region ELA_2 may be defined as the second anode, and the anode ANO corresponding to the third light-emitting region ELA_3 may be defined as the third anode. For example, the first stack ST1 may be located on the first anode, the second anode, and the third anode. For example, the first stack ST1 may further include a first hole transport layer HTL1, a first electron blocking layer BIL1, and a first electron transport layer ETL1.

[0176] The first hole transport layer HTL1 can be located on the first anode, the second anode, and the third anode. The first hole transport layer HTL1 can facilitate the transport of holes and can include a hole transport material. The hole transport material can include: carbazole derivatives such as N-phenylcarbazole or polyvinylcarbazole; fluorene derivatives; triphenylamine derivatives such as N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine (TPD) or 4,4',4''-tris(N-carbazolyl)triphenylamine (TCTA); N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB); or 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)aniline] (TAPC). However, the embodiments are not limited thereto.

[0177] The first electron blocking layer BIL1 can be located on the first hole transport layer HTL1 and can be located between the first hole transport layer HTL1 and the first light-emitting material layer EML1. The first electron blocking layer BIL1 can include a hole transport layer material and a metal or a metal compound to prevent electrons generated by the first light-emitting material layer EML1 from entering the first hole transport layer HTL1. In some embodiments, the above-mentioned first hole transport layer HTL1 and the first electron blocking layer BIL1 can be formed as a single layer in which their respective materials are mixed.

[0178] The first electron transport layer ETL1 can be located on the first light-emitting material layer EML1 and can be located between the first charge generation layer CGL1 and the first light-emitting material layer EML1. In some embodiments, the first electron transport layer ETL1 can include an electron transport material such as tris(8-hydroxyquinoline)aluminum (Alq3), 1,3,5-tris(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBi), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), 3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ), 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (tBu-PBD), bis(2-methyl-8-hydroxyquinolinato-N1,O8)-(1,1'-biphenyl-4-olato)aluminum (BAlq), bis(benzoquinolinato-10-hydroxylian)beryllium (Bebq2), 9,10-di(naphthalen-2-yl)anthracene (ADN), or a mixture thereof. However, the embodiments are not limited to this type of electron transport material. The second stack ST2 can be located on the first charge generation layer CGL1 and can further include a second hole transport layer HTL2, a second electron blocking layer BIL2, and a second electron transport layer ETL2.

[0179] The second hole transport layer HTL2 may be located on the first charge generation layer CGL1. The second hole transport layer HTL2 may be made of the same material as the material of the first hole transport layer HTL1, or may include one or more materials selected from materials such as those included in the first hole transport layer HTL1. The second hole transport layer HTL2 may be composed of a single layer or multiple layers.

[0180] The second electron blocking layer BIL2 may be located on the second hole transport layer HTL2, and may be located between the second hole transport layer HTL2 and the second light-emitting material layer EML2. The second electron blocking layer BIL2 may have the same material and structure as the material and structure of the first electron blocking layer BIL1, or may include one or more materials selected from materials such as those included in the first electron blocking layer BIL1.

[0181] The second electron transport layer ETL2 may be located on the second light-emitting material layer EML2, and may be located between the second charge generation layer CGL2 and the second light-emitting material layer EML2. The second electron transport layer ETL2 may have the same material and structure as the material and structure of the first electron transport layer ETL1, or may include one or more materials selected from materials such as those included in the first electron transport layer ETL1. The second electron transport layer ETL2 may be composed of a single layer or multiple layers.

[0182] The second charge generation layer CGL2 may be located on the second stack ST2, and may be located between the second stack ST2 and the third stack ST3.

[0183] The second charge generation layer CGL2 may have the same structure as the structure of the first charge generation layer CGL1 described above. For example, the second charge generation layer CGL2 may include an n-type charge generation layer CGL21 disposed close to the second stack ST2 and a p-type charge generation layer CGL22 disposed close to the cathode CE. The p-type charge generation layer CGL22 may be disposed on the n-type charge generation layer CGL21.

[0184] The second charge generation layer CGL2 may have a structure in which the n-type charge generation layer CGL21 and the p-type charge generation layer CGL22 are in contact with each other. The first charge generation layer CGL1 and the second charge generation layer CGL2 may be made of different materials or the same material.

[0185] The third stack ST3 may be located on the second charge generation layer CGL2 and may further include a third hole transport layer HTL3 and a third electron transport layer ETL3.

[0186] The third hole transport layer HTL3 may be located on the second charge generation layer CGL2. The third hole transport layer HTL3 may be made of the same material as that of the first hole transport layer HTL1, or may include one or more materials selected from materials such as those included in the first hole transport layer HTL1. The third hole transport layer HTL3 may be composed of a single layer or multiple layers. In the case where the third hole transport layer HTL3 is composed of multiple layers, each layer may include different materials.

[0187] The third electron transport layer ETL3 may be located on the third light-emitting material layer EML3 and may be located between the cathode CE and the third light-emitting material layer EML3. The third electron transport layer ETL3 may have the same material and structure as those of the first electron transport layer ETL1, or may include one or more materials selected from materials such as those included in the first electron transport layer ETL1. The third electron transport layer ETL3 may be composed of a single layer or multiple layers. In the case where the third electron transport layer ETL3 is composed of multiple layers, these layers may include different materials.

[0188] For example, the hole injection layer may be further located in at least any one of the spaces between the first stack ST1 and the first anode, the second anode, and the third anode, between the second stack ST2 and the first charge generation layer CGL1, and between the third stack ST3 and the second charge generation layer CGL2. The hole injection layer may facilitate the injection of holes into the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3. In some embodiments, the hole injection layer may be made of any one or more of copper phthalocyanine (CuPc), poly(3,4)-ethylenedioxythiophene (PEDOT), polyaniline (PANI), and N,N'-dinaphthyl-N,N'-diphenylbenzidine (NPD), but the embodiments are not limited thereto. In some embodiments, the hole injection layer may be located between the first stack ST1 and the first anode, the second anode, and the third anode, between the second stack ST2 and the first charge generation layer CGL1, and between the third stack ST3 and the second charge generation layer CGL2.

[0189] For example, the electron injection layer may be further located in at least any one of the spaces between the third electron transport layer ETL3 and the cathode CE, between the second charge generation layer CGL2 and the second stack ST2, and between the first charge generation layer CGL1 and the first stack ST1. The electron injection layer may facilitate the injection of electrons, and tris(8-hydroxyquinoline) aluminum (Alq3), PBD, TAZ, spiro-PBD, BAlq, or SAlq may be used, but the embodiments are not limited thereto. For example, the electron injection layer may be a metal halide such as any one or more of MgF2, LiF, NaF, KF, RbF, CsF, FrF, LiI, NaI, KI, RbI, CsI, FrI, and CaF2, but the embodiments are not limited thereto. The electron injection layer may further include a lanthanum material such as Yb, Sm, or Eu. In another example, the electron injection layer may include both a metal halide material and a lanthanum material such as RbI:Yb or KI:Yb. When the electron injection layer includes both a metal halide material and a lanthanum material, the electron injection layer may be formed by co-deposition of the metal halide material and the lanthanum material. In some embodiments, the electron injection layer may be located between the third electron transport layer ETL3 and the cathode CE, between the second charge generation layer CGL2 and the second stack ST2, and between the first charge generation layer CGL1 and the first stack ST1.

[0190] In some embodiments, the light emitting layer OL may not include a red light emitting material layer, and thus may not emit light of a third color such as red light. For example, the output light LE may not include a light component having a peak wavelength in the range of about 610 nm to about 650 nm, and may only include a light component having a peak wavelength in the range of about 440 nm to about 550 nm.

[0191] According to an embodiment, the light emitting layer OL may be interrupted (or separated) by a dummy layer DML. This may mean that, for example, at least one of the first hole transport layer HTL1, the first electron blocking layer BIL1, the first light emitting material layer EML1, the first electron transport layer ETL1, the n-type charge generation layer CGL11, the p-type charge generation layer CGL12, the second hole transport layer HTL2, the second electron blocking layer BIL2, the second light emitting material layer EML2, the second electron transport layer ETL2, the n-type charge generation layer CGL21, the p-type charge generation layer CGL22, the third hole transport layer HTL3, the third light emitting material layer EML3, and the third electron transport layer ETL3 included in the light emitting layer OL is interrupted (or separated).

[0192] According to an embodiment, the main light-emitting layer MOL may include the above-mentioned first hole transport layer HTL1, first electron blocking layer BIL1, first light-emitting material layer EML1, first electron transport layer ETL1, n-type charge generation layer CGL11, p-type charge generation layer CGL12, second hole transport layer HTL2, second electron blocking layer BIL2, second light-emitting material layer EML2, second electron transport layer ETL2, n-type charge generation layer CGL21, p-type charge generation layer CGL22, third hole transport layer HTL3, third light-emitting material layer EML3, and third electron transport layer ETL3.

[0193] According to an embodiment, the dummy light-emitting layer DOL may include the above-mentioned first hole transport layer HTL1, first electron blocking layer BIL1, first light-emitting material layer EML1, first electron transport layer ETL1, n-type charge generation layer CGL11, p-type charge generation layer CGL12, second hole transport layer HTL2, second electron blocking layer BIL2, second light-emitting material layer EML2, second electron transport layer ETL2, n-type charge generation layer CGL21, p-type charge generation layer CGL22, third hole transport layer HTL3, third light-emitting material layer EML3, and third electron transport layer ETL3.

[0194] Return reference Figure 6 , the first capping layer CPL1 may be disposed on the cathode CE. The first capping layer CPL1 may improve the viewing angle characteristics and increase the external light emission efficiency. The first capping layer CPL1 may be commonly disposed in the first light-emitting region ELA_1, the second light-emitting region ELA_2, the third light-emitting region ELA_3, and the non-light-emitting region NELA. The first capping layer CPL1 may cover (e.g., completely cover) the cathode CE.

[0195] The first capping layer CPL1 may include at least any one of an inorganic material and an organic material having a light-transmitting property. For example, the first capping layer CPL1 may be made of an inorganic layer or an organic layer TFEb, or may be made of an organic layer TFEb including inorganic particles. In some embodiments, the first capping layer CPL1 may include a triamine derivative, a carbazole biphenyl derivative, an aromatic diamine derivative, or an aluminum quinoline complex (Alq3). However, the embodiments are not limited thereto.

[0196] In some embodiments, the first capping layer CPL1 may be disposed on the cathode CE to overlap with the above-described dummy layer DML. For example, since the upper dummy layer UD of the dummy layer DML has a positive conical shape whose width gradually decreases as it approaches the upper surface UP of the upper dummy layer UD along the third direction DR3, damage to the first capping layer CPL1 overlapping with the dummy layer DML can be minimized. For example, the first capping layer CPL1 may not be interrupted (or separated) by the dummy layer DML. Thus, the first capping layer CPL1 may cover the interrupted portion of the light-emitting layer OL and / or the interrupted portion of the cathode CE.

[0197] The thin film encapsulation layer TFE of the light-emitting unit 100 may be disposed on the first capping layer CPL1. The thin film encapsulation layer TFE may protect the elements located below the thin film encapsulation layer TFE from external foreign substances such as moisture. The thin film encapsulation layer TFE may be commonly disposed in the first light-emitting region ELA_1, the second light-emitting region ELA_2, the third light-emitting region ELA_3, and the non-light-emitting region NELA. The thin film encapsulation layer TFE may cover (e.g., completely cover) the first capping layer CPL1.

[0198] The thin film encapsulation layer TFE may include a lower inorganic layer TFEa, an organic layer TFEb, and an upper inorganic layer TFEc sequentially stacked on the first capping layer CPL1.

[0199] The lower inorganic layer TFEa may cover (e.g., completely cover) the first capping layer CPL1 in the display region DA to cover the first light-emitting element, the second light-emitting element, and the third light-emitting element.

[0200] The organic layer TFEb may be disposed on the lower inorganic layer TFEa to cover the first light-emitting element, the second light-emitting element, and the third light-emitting element.

[0201] The upper inorganic layer TFEc may be disposed on the organic layer TFEb to cover (e.g., completely cover) the organic layer TFEb.

[0202] In some embodiments, each of the lower inorganic layer TFEa and the upper inorganic layer TFEc may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), or lithium fluoride, but the embodiments are not limited thereto.

[0203] In some embodiments, the organic layer TFEb may be made of an acrylic resin, a methacrylic resin, polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, or a perylene resin, but the embodiments are not limited thereto.

[0204] In some embodiments, the thin film encapsulation layer TFE may be disposed on the first capping layer CPL1 to overlap with the above-described dummy layer DML. For example, since the upper dummy layer UD of the dummy layer DML has a positive conical shape whose width gradually decreases as it approaches the upper surface UP of the upper dummy layer UD along the third direction DR3, damage to the thin film encapsulation layer TFE overlapping with the dummy layer DML can be minimized. For example, the thin film encapsulation layer TFE may not be interrupted (or separated) by the dummy layer DML. Thus, the thin film encapsulation layer TFE may cover the interrupted portion of the light-emitting layer OL and / or the interrupted portion of the cathode CE.

[0205] The wavelength conversion member WC of the light-emitting unit 100 may be disposed on the thin film encapsulation layer TFE. The wavelength conversion member WC may emit red, green, and blue light by converting the wavelength of the light emitted from the light-emitting element layer EML.

[0206] The wavelength conversion member WC may include a first wavelength conversion layer TPL, a second wavelength conversion layer WCL1, a third wavelength conversion layer WCL2, a barrier member BK, and a second capping layer CPL2.

[0207] The barrier member BK may define a space in which the wavelength conversion layers to be described later are disposed. In a plan view, the barrier member BK may surround the first wavelength conversion layer TPL, the second wavelength conversion layer WCL1, and the third wavelength conversion layer WCL2. The barrier member BK may overlap with the non-light-emitting area NELA of the light-emitting unit 100 and the light-shielding area BA of the color filter unit 300. The barrier member BK may not overlap with the light-emitting areas ELA_1 to ELA_3 of the light-emitting unit 100 and the light-transmitting areas TA_1 to TA_3 of the color filter unit 300.

[0208] In some embodiments, the barrier member BK may include a photocurable organic material or a photocurable organic material including a light-shielding material. However, the embodiments are not limited thereto.

[0209] The wavelength conversion member WC of the light-emitting unit 100 may include a first wavelength conversion layer TPL overlapping with the first light-transmitting area TA_1, a second wavelength conversion layer WCL1 overlapping with the second light-transmitting area TA_2, and a third wavelength conversion layer WCL2 overlapping with the third light-transmitting area TA_3.

[0210] The first wavelength conversion layer TPL may be disposed in the space defined by the barrier member BK and may overlap with the first light-emitting area ELA_1 and the first light-transmitting area TA_1 in the third direction DR3. The first wavelength conversion layer TPL may contact (e.g., directly contact) the second capping layer CPL2 and the barrier member BK.

[0211] The first wavelength conversion layer TPL may be a light-transmitting pattern that transmits incident light. For example, the output light LE provided by the first light-emitting element may be blue light as described above and may pass through the first wavelength conversion layer TPL and the first light-filtering pattern region 321a of the first color filter 321 to exit the display device 1. For example, the first output light L1 emitted from the first light-emitting region ELA_1 through the first light-transmitting region TA_1 to the outside may be blue light.

[0212] The first wavelength conversion layer TPL may include a base resin 330 and a light scatterer 331.

[0213] The base resin 330 may be made of an organic material having a high light transmittance. In some embodiments, the base resin 330 may include an organic material such as an epoxy resin, an acrylic resin, a carbazole resin, or an imide resin. However, the embodiments are not limited thereto.

[0214] The light scatterer 331 may have a refractive index different from that of the base resin 330 and may form an optical interface with the base resin 330. The light scatterer 331 may be light-scattering particles. The light scatterer 331 may scatter incident light in random directions without substantially converting the wavelength of the incident light passing through the light-transmitting region TA_1, regardless of the incident direction of the incident light.

[0215] The light scatterer 331 may be a material that scatters at least a part of the transmitted light and may include metal oxide particles or organic particles. In some embodiments, the light scatterer 331 may include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2) as metal oxides, and may include an acrylic resin or a urethane resin as organic particles, but the embodiments are not limited thereto.

[0216] The second wavelength conversion layer WCL1 may be disposed in the space defined by the bank member BK and may overlap with the second light-emitting region ELA_2 and the second light-transmitting region TA_2 in the third direction DR3. The second wavelength conversion layer WCL1 may contact (e.g., directly contact) the second capping layer CPL2 and the bank member BK.

[0217] The second wavelength conversion layer WCL1 may be a wavelength conversion pattern that converts or transforms the peak wavelength of incident light into another specific peak wavelength and outputs light having a specific peak wavelength. For example, the output light LE provided by the second light-emitting element may be blue light as described above, and when it passes through the second wavelength conversion layer WCL1 and the second light filtering pattern region 322a of the second color filter 322, it may be converted into green light having a peak wavelength in the range of about 510 nm to about 550 nm. Thus, green light can be emitted to the outside of the display device 1. For example, the second output light L2 emitted to the outside through the second light transmissive region TA_2 from the second light-emitting region ELA_2 may be green light.

[0218] The second wavelength conversion layer WCL1 may include a base resin 330, a light scatterer 331 dispersed in the base resin 330, and a first wavelength shifter 332 dispersed in the base resin 330.

[0219] The first wavelength shifter 332 may convert or transform the peak wavelength of incident light into another specific peak wavelength. The first wavelength shifter 332 may convert the output light LE, which is blue light provided by the second light-emitting element, into green light having a single peak wavelength in the range of about 510 nm to about 550 nm, and output the green light.

[0220] In some embodiments, the first wavelength shifter 332 may be a quantum dot, a quantum rod, or a phosphor. However, the embodiments are not limited thereto. For convenience of description, the case where the first wavelength shifter 332 is a quantum dot will be described below. A quantum dot may be a particulate material that emits light of a specific color when an electron transitions from the conduction band to the valence band. A quantum dot may be a semiconductor nanocrystal material. Quantum dots may have a specific bandgap depending on their composition and size. Thus, quantum dots can absorb light and then emit light having a unique wavelength. Examples of the semiconductor nanocrystals of quantum dots include group-IV nanocrystals, II-VI compound nanocrystals, III-V compound nanocrystals, IV-VI nanocrystals, and combinations thereof.

[0221] The II-VI group compounds may be selected from: binary compounds selected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; ternary compounds selected from CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and quaternary compounds selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and mixtures thereof.

[0222] The III-V group compounds may be selected from: binary compounds selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, and mixtures thereof; and quaternary compounds selected from GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

[0223] The IV-VI group compounds may be selected from: binary compounds selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; ternary compounds selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and quaternary compounds selected from SnPbSSe, SnPbSTe, SnPbSeTe, and mixtures thereof. The Group IV elements may be selected from silicon (Si), germanium (Ge), and mixtures thereof. The Group IV compounds may be binary compounds selected from silicon carbide (SiC), silicon germanium (SiGe), and mixtures thereof.

[0224] For example, binary compounds, ternary compounds, or quaternary compounds can be present in the particles at a uniform concentration, or can be present at partially different concentrations in the same particles. For example, they can have a core / shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and the shell can have a concentration gradient in which the concentration of the elements present in the shell decreases towards the center.

[0225] In some embodiments, the quantum dots can have a core-shell structure including a core containing the above-described nanocrystals and a shell surrounding the core. The shell of each quantum dot can serve as a protective layer for maintaining semiconductor properties by preventing chemical denaturation of the core and / or a charging layer for imparting electrophoretic properties to the quantum dots. The shell can be a single layer or multiple layers. The interface between the core and the shell can have a concentration gradient in which the concentration of the elements present in the shell decreases towards the center. The shell of each quantum dot can be, for example, a metal or non-metal oxide, a semiconductor compound, or a combination thereof.

[0226] For example, the metal or non-metal oxide can be a binary compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO, or a ternary compound such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4. However, the embodiments are not limited thereto.

[0227] For example, the semiconductor compound can be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, or AlSb. However, the embodiments are not limited thereto.

[0228] The light emitted from the first wavelength shifter 332 can have a full width at half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less. Therefore, the color purity and color reproducibility of the display device 1 can be further improved. For example, regardless of the incident direction of the incident light, the light emitted from the first wavelength shifter 332 can be radiated in all directions. Therefore, the lateral visibility of the second color displayed in the second light transmissive region TA_2 can be improved.

[0229] A part of the output light LE provided by the second light-emitting element can be transmitted through the second wavelength conversion layer WCL1 without being converted into green light by the first wavelength shifter 332. Among the output light LE, the component incident on the second light filtering pattern area 322a of the second color filter 322 without being wavelength-converted by the second wavelength conversion layer WCL1 can be blocked by the second light filtering pattern area 322a. For example, the green light into which the output light LE has been converted by the second wavelength conversion layer WCL1 can be transmitted through the second light filtering pattern area 322a and then emitted to the outside. For example, the second output light L2 emitted to the outside of the display device 1 through the second light-transmitting area TA_2 can be green light.

[0230] The third wavelength conversion layer WCL2 can be disposed in the space defined by the bank member BK and can overlap with the third light-emitting area ELA_3 and the third light-transmitting area TA_3 in the third direction DR3. The third wavelength conversion layer WCL2 can contact (e.g., directly contact) the second capping layer CPL2 and the bank member BK.

[0231] The third wavelength conversion layer WCL2 can be a wavelength conversion pattern that converts or transforms the peak wavelength of incident light into another specific peak wavelength and outputs light having a specific peak wavelength. For example, the output light LE provided by the third light-emitting element can be blue light as described above, and when it passes through the third wavelength conversion layer WCL2 and the third light filtering pattern area 323a of the third color filter 323, it can be converted into red light having a peak wavelength in the range of about 610 nm to about 650 nm. Therefore, red light can be emitted to the outside of the display device 1. For example, the third output light L3 emitted from the third light-emitting area ELA_3 to the outside through the third light-transmitting area TA_3 can be red light.

[0232] The third wavelength conversion layer WCL2 can include a base resin 330, a light scatterer 331 dispersed in the base resin 330, and a second wavelength shifter 332 dispersed in the base resin 333.

[0233] The second wavelength shifter 333 can convert or transform the peak wavelength of incident light into another specific peak wavelength. The second wavelength shifter 333 can convert the output light LE, which is blue light provided by the third light-emitting element, into red light having a single peak wavelength in the range of about 610 nm to about 650 nm and output red light. In some embodiments, the second wavelength shifter 333 can be a quantum dot, a quantum rod, or a phosphor. However, the embodiments are not limited thereto. In the case where the second wavelength shifter 333 is a quantum dot, they can have a composition substantially the same as that of the above-described first wavelength shifter 332 in the case where the first wavelength shifter 332 is a quantum dot. Therefore, for the sake of convenience of description, the description of the second wavelength shifter 333 will be omitted.

[0234] A portion of the output light LE provided by the third light emitting element may be transmitted through the third wavelength conversion layer WCL2 without being converted into red light by the second wavelength shifter 333. Among the output light LE, the component incident on the third filter pattern area 323a of the third color filter 323 may be blocked by the third filter pattern area 323a without being wavelength-converted by the third wavelength conversion layer WCL2. For example, the output light LE, which has been converted into red light by the third wavelength conversion layer WCL2, may be transmitted through the third filter pattern area 323a and then emitted to the outside. For example, the third output light L3 emitted to the outside of the display device 1 through the third light-transmitting area TA_3 may be red light.

[0235] The color filter unit 300 may be disposed on the wavelength conversion member WC of the light emitting unit 100. The color filter unit 300 may have a structure in which a second substrate 310 and a color filter member 320 are sequentially stacked to a second side in the third direction DR3.

[0236] Apart from Figure 6 In addition, we will now refer to Figures 9 to 11 The color filter unit 300 is described in detail.

[0237] The second substrate 310 of the color filter unit 300 may function as a base of the color filter unit 300. The second substrate 310 may be made of a light-transmitting material. The second substrate 310 may be a glass substrate or a plastic substrate. In the case where the second substrate 310 is a plastic substrate, it may have flexibility. In some embodiments, in the case where the second substrate 310 is a plastic substrate, it may include polyimide. However, embodiments are not limited thereto. Since the light emitting unit 100 and the color filter unit 300 face each other in the third direction DR3 as described above, the first substrate 110 of the light emitting unit 100 and the second substrate 310 of the color filter unit 300 may face each other in the third direction DR3.

[0238] The color filter member 320 of the color filter unit 300 may be disposed between the second substrate 310 and the filler 500. The color filter member 320 may include a filter pattern area and a light shielding pattern portion BM. The light shielding pattern portion BM may surround the filter pattern area. The filter pattern of the color filter member 320 may define a light-transmitting area of the color filter unit 300, and the light shielding pattern portion BM may define a light shielding area BA of the color filter unit 300.

[0239] like Figure 6 and Figures 9 to 11As shown, the color filter member 320 may include a first color filter 321, a second color filter 322, and a third color filter 323. The first color filter 321 may absorb both the second light and the third light other than the first light, the second color filter 322 may absorb both the first light and the third light other than the second light, and the third color filter 323 may absorb both the first light and the second light other than the third light. For example, the first color filter 321 may transmit the first light, the second color filter 322 may transmit the second light, and the third color filter 323 may transmit the third light.

[0240] In some embodiments, the first color filter 321 may be a blue color filter and may include a blue colorant. As used herein, the term "colorant" is a concept that includes both dyes and pigments. The first color filter 321 may include a base resin, and the blue colorant may be dispersed in the base resin. In some embodiments, the second color filter 322 may be a green color filter and may include a green colorant. The second color filter 322 may include a base resin, and the green colorant may be dispersed in the base resin. In some embodiments, the third color filter 323 may be a red color filter and may include a red colorant. The third color filter 323 may include a base resin, and the red colorant may be dispersed in the base resin.

[0241] The first color filter 321 may include a first light-filtering pattern region 321a and a first light-blocking pattern region 321b surrounding the first light-filtering pattern region 321a. The second color filter 322 may include a second light-filtering pattern region 322a and a second light-blocking pattern region 322b surrounding the second light-filtering pattern region 322a. The third color filter 323 may include a third light-filtering pattern region 323a and a third light-blocking pattern region 323b surrounding the third light-filtering pattern region 323a. For example, the first light-filtering pattern region 321a of the first color filter 321 may overlap with the first light-transmitting region TA_1, and the first light-blocking pattern region 321b of the first color filter 321 may surround the first light-filtering pattern region 321a that overlaps with the first light-transmitting region TA_1. However, the first light-blocking pattern region 321b of the first color filter 321 may not overlap with the second light-transmitting region TA_2 and the third light-transmitting region TA_3, and may overlap with the light-blocking region BA. The second light-filtering pattern region 322a of the second color filter 322 may overlap with the second light-transmitting region TA_2, and the second light-blocking pattern region 322b of the second color filter 322 may surround the second light-filtering pattern region 322a that overlaps with the second light-transmitting region TA_2. However, the second light-blocking pattern region 322b of the second color filter 322 may not overlap with the first light-transmitting region TA_1 and the third light-transmitting region TA_3, and may overlap with the light-blocking region BA. The third light-filtering pattern region 323a of the third color filter 323 may overlap with the third light-transmitting region TA_3, and the third light-blocking pattern region 323b of the third color filter 323 may surround the third light-filtering pattern region 323a that overlaps with the third light-transmitting region TA_3. However, the third light-blocking pattern region 323b of the third color filter 323 may not overlap with the first light-transmitting region TA_1 and the second light-transmitting region TA_2, and may overlap with the light-blocking region BA. For example, the light-filtering pattern regions of the color filter member 320 may include the first light-filtering pattern region 321a of the first color filter 321, the second light-filtering pattern region 322a of the second color filter 322, and the third light-filtering pattern region 323a of the third color filter 323, and the light-blocking pattern portion BM may have a structure in which the first light-blocking pattern region 321b of the first color filter 321, the second light-blocking pattern region 322b of the second color filter 322, and the third light-blocking pattern region 323b of the third color filter 323 are stacked therein.

[0242] The first light-filtering pattern region 321a of the first color filter 321 may function as a blocking filter that blocks red light and green light. For example, the first light-filtering pattern region 321a may transmit first light (e.g., blue light) and block or absorb second light (e.g., green light) and third light (e.g., red light).

[0243] The second light filtering pattern region 322a of the second color filter 322 may act as a blocking filter for blocking blue light and red light. For example, the second light filtering pattern region 322a may transmit second light (e.g., green light) and block or absorb first light (e.g., blue light) and third light (e.g., red light).

[0244] The third light filtering pattern region 323a of the third color filter 323 may act as a blocking filter for blocking blue light and green light. For example, the third light filtering pattern region 323a may transmit third light (e.g., red light) and block or absorb first light (e.g., blue light) and second light (e.g., green light).

[0245] In some embodiments, the light shielding pattern portion BM may have a structure in which a first light shielding pattern region 321b, a third light shielding pattern region 323b, and a second light shielding pattern region 322b are sequentially stacked in a third direction DR3. However, the embodiments are not limited thereto. For example, the light shielding pattern portion BM may not be composed of the above-described color filters 321 to 323, but may be formed of an organic light shielding material. For example, the light shielding pattern portion BM may be formed by coating and exposing an organic light shielding material. For convenience of description, a case where the light shielding pattern portion BM has a structure in which a first light shielding pattern region 321b, a third light shielding pattern region 323b, and a second light shielding pattern region 322b are sequentially stacked in a third direction DR3 will be described below. The light shielding pattern portion BM may absorb all of the first light, second light, and third light through the above-described configuration.

[0246] The filler 500 may be interposed between the light emitting unit 100 and the color filter unit 300 to fill the space between the light emitting unit 100 and the color filter unit 300 as described above. For example, in some embodiments, the filler 500 may contact (e.g., directly contact) the second capping layer CPL2 of the light emitting unit 100 and the color filter member 320 of the color filter unit 300. However, the embodiments are not limited thereto.

[0247] In some embodiments, the filler 500 may be made of a material having an extinction coefficient that is substantially zero. The refractive index and the extinction coefficient may be related, and the extinction coefficient may decrease as the refractive index decreases. For example, when the refractive index is about 1.7 or less, the extinction coefficient may converge to substantially zero. In some embodiments, the filler 500 may be made of a material having a refractive index of about 1.7 or less. Accordingly, it is possible to prevent the light provided by the self-luminous element from being absorbed by the filler 500 when it passes through the filler 500, or it is possible to minimize the absorption of light by the filler 500. In some embodiments, the filler 500 may be made of an organic material having a refractive index of about 1.4 to about 1.6.

[0248] Figure 12 is a schematic diagram of an equivalent circuit of a pixel circuit of a display device 1 according to an embodiment.

[0249] Reference Figure 12 , according to an embodiment, the pixel PX of the display device 1 may include a light-emitting diode EL, transistors T1 to T3, and a storage capacitor Cst.

[0250] The light-emitting diode EL may emit light according to the current supplied through the first transistor T1. The light-emitting diode EL may include a first electrode (e.g., an anode), a second electrode (e.g., a cathode), and at least one light-emitting element disposed therebetween. The light-emitting element may emit light within a specific wavelength range in response to the electrical signals received from the first electrode and the second electrode.

[0251] One end of the light-emitting diode EL may be connected to the source electrode of the first transistor T1, and the other end may be connected to the second voltage line VL2 to which a low-potential voltage (e.g., a second power supply voltage) lower than the high-potential voltage (e.g., a first power supply voltage) of the first voltage line VL1 is supplied.

[0252] The first transistor T1 may adjust the current flowing from the first voltage line VL1 to which the first power supply voltage is supplied to the light-emitting diode EL according to the voltage difference between the gate electrode and the source electrode. For example, the first transistor T1 may be a driving transistor for driving the light-emitting diode EL. The first transistor T1 may have a gate electrode connected to the source electrode of the second transistor T2, a source electrode connected to the first electrode of the light-emitting diode EL, and a drain electrode connected to the first voltage line VL1 to which the first power supply voltage is applied.

[0253] The second transistor T2 may be turned on by the scanning signal of the scanning line SL to connect the data line DTL to the gate electrode of the first transistor T1. The second transistor T2 may have a gate electrode connected to the scanning line SL, a source electrode connected to the gate electrode of the first transistor T1, and a drain electrode connected to the data line DTL.

[0254] The third transistor T3 may be turned on by the scanning signal of the scanning line SL to connect the initialization voltage line VIL to one end of the light-emitting diode EL. The third transistor T3 may have a gate electrode connected to the scanning line SL, a drain electrode connected to the initialization voltage line VIL, and a source electrode connected to one end of the light-emitting diode EL or the source electrode of the first transistor T1.

[0255] In one embodiment, the source electrodes and drain electrodes of each of the transistors T1 to T3 are not limited to the above description, and the situation may also be reversed. Each of the transistors T1 to T3 may be formed as a thin-film transistor. Although it has been described in Figure 12The case where each of the transistors T1 to T3 is an N-type metal oxide semiconductor field effect transistor (MOSFET) is described, but the embodiments are not limited thereto. For example, each of the transistors T1 to T3 may also be formed as a P-type MOSFET, or some of them may be formed as N-type MOSFETs while others may be formed as P-type MOSFETs.

[0256] The storage capacitor Cst may be formed between the gate electrode and the source electrode of the first transistor T1. The storage capacitor Cst may store the voltage difference between the gate voltage and the source voltage of the first transistor T1.

[0257] In Figure 12 In the embodiments of, the gate electrodes of both the second transistor T2 and the third transistor T3 may be connected to the same scan line SL. Therefore, the second transistor T2 and the third transistor T3 are simultaneously turned on by the scan signal transmitted from the same scan line SL. However, the embodiments are not limited thereto. The gate electrode of the second transistor T2 may also be connected to any scan line SL, and the gate electrode of the third transistor T3 may be connected to another scan line SL different from the above scan line SL.

[0258] In some embodiments, Figure 12 the pixel PX of may include any one of the above Figure 4 first light emitting region ELA_1 to third light emitting region ELA_3. For example, any one of the three pixels PX may include the first light emitting region ELA_1, another one of the three pixels PX may include the second light emitting region ELA_2, and the other one of the pixels PX may include the third light emitting region ELA_3.

[0259] Figure 13 is Figure 3 Another schematic plan view of the region A1 of and a schematic plan view of the light emitting unit and the dummy layer DML included in the Figure 3 display device of.

[0260] Figure 13 The display device of is different from the above Figure 4 display device in the position of the light emitting region, the shape of the light emitting region, the position of the dummy layer DML, and the shape of the dummy layer DML. Therefore, these differences will be described as follows.

[0261] As Figure 13As shown, the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 can be arranged in a row along the opposite direction of the second direction DR2 (hereinafter referred to as the second reverse direction). For example, the first color filter 321 can be disposed in the first light-emitting region ELA_1, the second color filter 322 can be disposed in the second light-emitting region ELA_2, and the third color filter 323 can be disposed in the third light-emitting region ELA_3.

[0262] The dummy layer DML can include a first sub-dummy layer SDML1, a second sub-dummy layer SDML2, and a third sub-dummy layer SDML3.

[0263] The first sub-dummy layer SDML1 can be disposed around the first light-emitting region ELA_1 to face three surfaces of the first light-emitting region ELA_1. The first sub-dummy layer SDML1 can have, for example, a "]" shape.

[0264] The second sub-dummy layer SDML2 can be disposed between the first light-emitting region ELA_1 and the second light-emitting region ELA_2.

[0265] The third sub-dummy layer SDML3 can be disposed around the third light-emitting region ELA_3 to face three surfaces of the third light-emitting region ELA_3. At least a part of the third sub-dummy layer SDML3 can be disposed between the third light-emitting region ELA_3 and the second light-emitting region ELA_2. The third sub-dummy layer SDML3 can have, for example, a "]" shape.

[0266] Along Figure 13 The cross-sectional view taken along the line X2-X2' can be the same as the above Figure 6 cross-sectional view.

[0267] Figure 14 is Figure 3 Another schematic plan view of the region A1 of Figure 3 and a schematic plan view of the light-emitting unit and the dummy layer DML included in the display device of

[0268] Figure 14 The display device of Figure 4 is different from the above display device in the shape of the dummy layer DML. Therefore, the difference will be described as follows.

[0269] As Figure 14 shown, in the plan view, the dummy layer DML can have a dotted line shape. For example, the first sub-dummy layer SDML1 can be disposed around the first light-emitting region ELA_1 in a dotted line shape, and the second sub-dummy layer SDML2 can be disposed around the third light-emitting region ELA_3 in a dotted line shape.

[0270] Figure 15 isFigure 3 Another schematic plan view of region A1 and a schematic plan view of a light-emitting unit and a dummy layer DML included in a Figure 3 display device.

[0271] Figure 15 The display device of Figure 13 is different from the above-mentioned

[0272] As Figure 15 shown, in the plan view, the dummy layer DML may have a dotted line shape. For example, the first sub-dummy layer SDML1 may be disposed in a dotted line shape around the first light-emitting area ELA_1, and the second sub-dummy layer SDML2 may be disposed in a dotted line shape between the first light-emitting area ELA_1 and the second light-emitting area ELA_2. The third sub-dummy layer SDML3 may be disposed in a dotted line shape around the third light-emitting area ELA_3.

[0273] The dotted-line-shaped dummy layer DML can more effectively prevent lateral leakage current in display devices with fine pixels, such as augmented reality (AR) and virtual reality (VR) display devices. For example, since a greater resistance is generated in the current path between adjacent pixels by the dotted-line-shaped dummy layer DML, the dotted-line-shaped dummy layer DML can more effectively reduce the lateral leakage current in a display device having a fine pixel structure in which the distance between adjacent pixels is quite short.

[0274] Figures 16 to 22 is a schematic cross-sectional view for explaining a method of manufacturing a display device according to an embodiment. For example, Figures 16 to 22 is a schematic cross-sectional view for explaining a method of manufacturing the display device illustrated in the above Figure 7 above.

[0275] First, as Figure 16 shown, a first substrate 110 on which an anode ANO is disposed may be prepared.

[0276] Next, as Figure 17 shown, a pixel definition layer 170 may be disposed on the anode ANO. For example, the pixel definition layer 170 may be disposed in the non-light-emitting area NELA to overlap with an edge portion of the anode ANO.

[0277] Next, as Figure 18As shown in [Fig. 0], an inorganic material, which is a raw material for the dummy layer DML, is coated on the entire surface of the first substrate 110 including the pixel defining layer 170 and the anode ANO, and then cured to form an organic material layer DM_S covering the entire surface of the first substrate 110 including the pixel defining layer 170 and the anode ANO. For example, the organic material may be a negative-type organic material. Thus, the organic material layer DM_S made of the organic material may also include a negative-type organic material. The process of curing the organic material may be performed, for example, by a soft baking process.

[0278] Next, as Figure 19 shown in [Fig. 1], an exposure process may be performed on the organic material layer DM_S. For example, a mask MK may be placed over the organic material layer DM_S. The mask MK may have an opening OPN that exposes a portion of the organic material layer on the pixel defining layer 170. When ultraviolet light UV is irradiated through the mask MK placed over the organic material layer DM_S, the ultraviolet light UV may be irradiated only onto the portion of the organic material layer exposed through the opening OPN of the mask MK. Thus, the organic material layer DM_S may include an exposed portion and an unexposed portion.

[0279] Next, a developing process may be performed on the exposed organic material layer DM_S. For example, when a developer comes into contact with the organic material layer DM_S on which the exposure process has been performed, the unexposed portion of the organic material layer DM_S may be removed by the developer, thereby forming the dummy layer DML as Figure 20 shown in [Fig. 2]. For example, only the exposed portion of the organic material layer DM_S may remain. After the developing process, a hard baking process may be additionally performed on the organic material layer DM_S.

[0280] Next, as Figure 21 shown in [Fig. 3], a light-emitting layer OL may be deposited on the first substrate 110 including the dummy layer DML. For example, since the edge portion of the lower dummy layer LD included in the dummy layer DML has an inverted conical shape, the light-emitting layer OL may be interrupted (or separated) around the dummy layer DML. Thus, the light-emitting layer OL may be divided into a main light-emitting layer MOL on the anode ANO and a dummy light-emitting layer DOL on the dummy layer DML.

[0281] Next, as Figure 22 shown in [Fig. 4], a cathode CE may be provided on the light-emitting layer OL. For example, since the edge portion of the lower dummy layer LD included in the dummy layer DML has an inverted conical shape, the cathode CE may be interrupted around the dummy layer DML. Thus, the cathode CE may be divided into a main cathode MCE on the main light-emitting layer MOL and a dummy cathode DCE on the dummy layer DML.

[0282] Next, as described above Figure 7As shown, a first capping layer CPL1, a lower inorganic layer TFEa, an organic layer TFEb, and an upper inorganic layer TFEc can be sequentially formed on the cathode CE.

[0283] Next, as described above Figure 6 As shown, a wavelength conversion member WC can be disposed on the upper inorganic layer TFEc.

[0284] Figure 23 is a schematic diagram for explaining the effect of preventing lateral leakage current between adjacent pixels by a dummy layer DML in a display device according to an embodiment.

[0285] As Figure 23 shown, the first pixel PX1 can be a pixel including the above-described first light-emitting region ELA_1, and the third pixel PX3 can be a pixel including the above-described third light-emitting region ELA_3. The first pixel PX1 and the third pixel PX3 can be adjacent to each other. For example, the first pixel PX1 and the third pixel PX3 can be pixels included in one unit pixel, or can be pixels included in different unit pixels. For example, the first pixel PX1 can be any one of three pixels included in the first unit pixel, and the third pixel PX3 can be any one of three pixels included in the third unit pixel. For example, the second transistor T2 of the first pixel PX1 can be turned on by a scan signal of the scan line SL to connect the first data line DTL1 to the gate electrode of the first transistor T1 of the first pixel PX1. The second transistor T2 of the third pixel PX3 can be turned on by a scan signal of the scan line SL to connect the second data line DTL2 to the gate electrode of the first transistor T1 of the third pixel PX3.

[0286] For example, the first light-emitting diode EL1 of the first pixel PX1 can include light-emitting elements EL1-1 to EL1-4 connected in series between the first transistor T1 provided in the first pixel PX1 and the second voltage line VL2, and the third light-emitting diode EL3 of the third pixel PX3 can include light-emitting elements EL3-1 to EL3-4 connected in series between the first transistor T1 included in the third pixel PX3 and the second voltage line VL2. In Figure 23 shown, as an example, the first light-emitting diode EL1 and the third light-emitting diode EL3 are illustrated as 4-string light-emitting diodes each including four light-emitting elements.

[0287] As described above, since the light-emitting layer OL between the first light-emitting region ELA_1 and the second light-emitting region ELA_2 is interrupted (or separated) by the dummy layer DML, a large resistance can be generated between the light-emitting elements EL1-1 to EL1-4 of the first light-emitting diode EL1 and the light-emitting elements EL3-1 to EL3-4 of the third light-emitting diode EL3. For example, an equivalent circuit can be established as if a large number of resistors R are provided between the first pixel PX1 including the first light-emitting region ELA_1 and the third pixel PX3 including the third light-emitting region ELA_3. Therefore, the lateral leakage current between the first pixel PX1 and the third pixel PX3 can be minimized. For example, the lateral leakage current between the first pixel PX1 providing blue light and the third pixel PX3 providing red light can be minimized. Therefore, each time the third light-emitting diode EL3 of the third pixel PX3 is turned on and the first light-emitting diode EL1 of the first pixel PX1 is turned off, the problem that the first light-emitting diode EL1 of the first pixel PX1 is turned on due to the lateral leakage current from the turned-on third pixel PX3 can be solved. In the case where the lateral leakage current from the third pixel PX3 is supplied to the first pixel PX1 each time the third pixel PX3 is turned on, for example, the red light from the third pixel PX3 and the blue light from the first pixel PX1 can be mixed with each other. For example, due to the lateral leakage current from the third pixel PX3, sufficient current (e.g., driving current) cannot be supplied to the third light-emitting diode EL3 of the third pixel PX3, thereby deteriorating the color purity of the red light. However, as in the embodiment, in the case where the light-emitting layer OL is interrupted (or separated) by the dummy layer DML portion provided between adjacent pixels, the lateral leakage current is minimized due to the increased resistance. Therefore, the color mixing phenomenon and the color purity deterioration phenomenon can be prevented, thereby improving the image quality of the display device.

[0288] Figure 24 is a chromaticity distribution diagram.

[0289] The first graph CR1 may be a graph representing a reference color space (e.g., a color space or a color gamut in the visible light region), the second graph CR2 may be a graph representing a color space (or a color gamut) defined by Digital Cinema Initiative (DCI)-P3, and the third graph CR3 may be a graph representing a color space (or a color gamut) defined based on the measurement of an image of a display device according to an embodiment.

[0290] The third graph CR3 may include three vertices. The first vertex P1_R may represent the red region, the second vertex P2_G may represent the green region, and the third vertex P3_B may represent the blue region.

[0291] As Figure 24As shown, a third graphic CR3 including a first vertex P1_R can surround a second graphic CR2 and has an area larger than that of the second graphic CR2. Thus, the display device according to an embodiment can satisfy the color purity defined in DCI-P3. For example, in the display device according to an embodiment, the color purity of red can be improved, and color mixing can be prevented. For example, the display device according to an embodiment can provide a high color purity corresponding to about 99.2% of the color space defined by DCI-P3. For example, the display device according to an embodiment can exhibit a low color mixing rate of about 0.3%.

[0292] Figure 25 Illustrated are the peaks of each wavelength of a display device 1 according to an embodiment.

[0293] As Figure 25 shown, in the display device 1 according to an embodiment, in the red wavelength region R255, the green wavelength region G255, and the blue wavelength region B255, the peak of each wavelength can be maintained at a high value with little noise. Thus, in the display device 1 according to an embodiment, the color purity can be improved.

[0294] Figure 26 is a focused ion beam (FIB) image of a dummy layer DML of a display device according to an embodiment.

[0295] As Figure 26 shown, the dummy layer DML can have an elliptical cross-section.

[0296] The layer provided on the dummy layer DML can be an n-type charge generation layer CGL11. The n-type charge generation layer CGL11 can be interrupted by the dummy layer DML around the dummy layer DML.

[0297] According to an embodiment, since the light-emitting layer OL and the wavelength conversion member WC are disposed adjacent to each other, there is a possibility of color mixing between adjacent pixels. However, since the dummy layer DML is provided on the pixel defining layer between adjacent pixels, the color mixing phenomenon can be minimized.

[0298] According to an embodiment, when the dummy layer DML has a color different from the colors provided by adjacent pixels, it can block the light provided by the light-emitting layer OL of the adjacent pixels, thereby further improving the color mixing prevention effect. For example, when the light-emitting layer OL of a pixel provides blue light, the dummy layer DML can have a color different from blue (for example, red or green). For example, the blue light emitted from the light-emitting layer OL of one pixel is difficult to enter the wavelength conversion layer corresponding to the adjacent pixel. This is because the dummy layer DML having a color different from blue is provided on the pixel defining layer between adjacent pixels. Therefore, the problem that one pixel emits light during the light-emitting period of another pixel adjacent to the pixel can be solved. Ultimately, color mixing between adjacent pixels can be prevented, and color purity can be improved.

[0299] In a display device according to an embodiment, color mixing can be prevented, and color purity can be improved. Therefore, the image quality of the display device can be improved.

[0300] At the end of the detailed description, those skilled in the art will understand that many changes and modifications can be made to the preferred embodiments without substantially departing from the principles of the present invention. Therefore, the preferred embodiments disclosed in the present invention are used only in a general and descriptive sense, and not for the purpose of limitation.

Claims

1. A display device, comprising: a substrate; a first electrode on the substrate; a pixel defining layer on the first electrode; a dummy layer on the pixel defining layer; a light-emitting layer on the first electrode and the dummy layer; and a second electrode on the light-emitting layer, wherein at least one side surface of the dummy layer has an arc-shaped cross-section.

2. The display device according to claim 1, wherein The dummy layer has an elliptical cross-section.

3. The display device according to claim 1, wherein, The dummy layer includes a lower dummy layer and an upper dummy layer. The lower dummy layer has a width that gradually increases as it moves away from the lower surface of the lower dummy layer along a first direction from the dummy layer toward the second electrode on the dummy layer, and the upper dummy layer has a width that gradually decreases as it moves closer to the upper surface of the upper dummy layer along the first direction.

4. The display device according to claim 3, wherein the lower dummy layer includes an inverted conical side surface, and the upper dummy layer includes a regular conical side surface.

5. The display device according to claim 1, wherein, The dummy layer has at least one of green, red, blue, and black.

6. The display device according to claim 1, further comprising: a color filter and a light-shielding pattern portion disposed on the light-emitting layer on the first electrode, wherein at least one of the dummy layer, the color filter, and the light-shielding pattern portion has the same color.

7. The display device according to claim 1, wherein the pixel defining layer defines a light-emitting region corresponding to the light-emitting layer on the first electrode, and in a plan view, the dummy layer is disposed around the light-emitting region.

8. The display device according to claim 7, wherein the pixel defining layer defines a plurality of light-emitting regions, and in a plan view, at least a portion of the dummy layer is disposed between adjacent light-emitting regions.

9. The display device according to claim 1, wherein, In a plan view, the dummy layer has a line shape.

10. The display device according to claim 1, wherein, In a plan view, the dummy layer has a dotted line shape.

11. The display device according to claim 1, wherein, The dummy layer includes an organic material.

12. The display device according to claim 11, wherein, The dummy layer includes a negative organic material.

13. The display device according to claim 1, wherein, The dummy layer has a thickness of 1 μm to 6 μm.

14. The display device according to claim 1, wherein, The light-emitting layer on the first electrode and the light-emitting layer on the dummy layer are disconnected from each other.

15. The display device according to claim 14, wherein, The light-emitting layer includes: a main light-emitting layer on the first electrode; and a dummy light-emitting layer disposed on the dummy layer and separated from the main light-emitting layer.

16. The display device according to claim 1, wherein, The second electrode disposed on the light-emitting layer to overlap with the first electrode and the second electrode disposed on the light-emitting layer to overlap with the dummy layer are disconnected from each other.

17. The display device according to claim 16, wherein, The second electrode includes: a main second electrode disposed on the light-emitting layer to overlap with the first electrode; and a dummy second electrode disposed on the light-emitting layer to overlap with the dummy layer and separated from the main second electrode.

18. The display device according to claim 1, further comprising: a thin film encapsulation layer on the second electrode, wherein the thin film encapsulation layer covers the interrupted portion of the light-emitting layer.

19. The display device according to claim 18, further comprising: a capping layer between the second electrode and the thin film encapsulation layer, wherein the capping layer covers the interrupted portion of the light-emitting layer.

20. The display device according to claim 18, further comprising: A wavelength conversion component, on the thin film encapsulation layer.

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