Display device

Abstract

Disclosed is a display device capable of improving image quality. The display device may include: a substrate; a first electrode on the substrate; a pixel defining layer on the first electrode; a dummy layer disposed on an uppermost surface of the pixel defining layer; a light emitting layer on the first electrode and the dummy layer; and a second electrode on the light emitting layer, wherein an angle between a lower surface of the dummy layer facing the pixel defining layer and a side surface of the dummy layer adjacent to the lower surface of the dummy layer may be an acute angle.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10 - 2024 - 0006410, filed with the Korean Intellectual Property Office on January 16, 2024, the entire contents of which are incorporated herein by reference. Technical field

[0003] The present disclosure relates to a display device capable of improving image quality and a method of manufacturing a display device. Background art

[0004] With the development of multimedia, display devices have become increasingly important. Accordingly, various display devices, such as liquid crystal display (LCD) devices and organic light - emitting diode (OLED) display devices, are being developed.

[0005] In a display device, a self - emissive display device includes a self - emissive element such as an organic light - emitting diode. The self - emissive element may include two electrodes facing each other and a light - emitting layer disposed between the two electrodes. In the case where the self - emissive element is an organic light - emitting diode, electrons and holes provided from the two electrodes may recombine in the light - emitting layer to generate excitons. When the generated excitons transition from an excited state to a ground state, light may be emitted.

[0006] The display device may include a color conversion element for realizing colors by receiving light from the organic light - emitting diode. For example, the color conversion element may receive blue light from the organic light - emitting diode and emit blue, green, and red light, so that an image having various colors can be seen. The color conversion element may be provided in the display device in the form of a separate substrate or may be integrated (e.g., directly integrated) with the elements in the display device. Summary of the invention

[0007] Aspects of the present disclosure provide a display device capable of improving image quality and a method of manufacturing a display device.

[0008] According to an embodiment of the present disclosure, a display device may include: a first electrode on a substrate; a pixel - defining layer on the first electrode; a dummy layer disposed on the uppermost surface of the pixel - defining layer; a light - emitting layer on the first electrode and the dummy layer; and a second electrode on the light - emitting layer, wherein an angle between a lower surface of the dummy layer facing the pixel - defining layer and a side surface of the dummy layer adjacent to the lower surface of the dummy layer may be an acute angle.

[0009] In an embodiment, the angle between the lower surface and the side surface of the dummy layer may be in a range of about 65 degrees to about 90 degrees.

[0010] In one embodiment, the dummy layer may have a trapezoidal cross-section.

[0011] In one embodiment, the dummy layer may have a width that gradually decreases in a first direction from the lower surface of the dummy layer toward the upper surface of the dummy layer facing away from the lower surface.

[0012] In one embodiment, the dummy layer may have a pale yellow color.

[0013] In one embodiment, the pixel defining layer may have a light emitting region disposed corresponding to a portion of the light emitting layer on the first electrode, and in a plan view, the dummy layer may be disposed around the light emitting region.

[0014] In one embodiment, the pixel defining layer may define a plurality of light emitting regions, and in a plan view, at least a portion of the dummy layer may be disposed between adjacent light emitting regions.

[0015] In one embodiment, the dummy layer may have a line shape in a plan view.

[0016] In one embodiment, the dummy layer may have a dot shape in a plan view.

[0017] In one embodiment, the dummy layer may include an inorganic material.

[0018] In one embodiment, the dummy layer may include SiN x , SiO x and at least one of SiON.

[0019] In one embodiment, the dummy layer may have a thickness in the range of about to about .

[0020] In one embodiment, a portion of the light emitting layer on the first electrode and a portion of the light emitting layer on the dummy layer may be electrically disconnected.

[0021] In one embodiment, the light emitting layer may include: a main light emitting layer on the first electrode; and a dummy light emitting layer disposed on the dummy layer, and the dummy light emitting layer may be separated from the main light emitting layer.

[0022] In one embodiment, a portion of the second electrode overlapping the first electrode in a plan view may be electrically disconnected from a portion of the second electrode overlapping the dummy layer in a plan view.

[0023] In one embodiment, the second electrode may include: a main second electrode disposed on the light-emitting layer to overlap with the first electrode; and a dummy second electrode disposed on the light-emitting layer to overlap with the dummy layer, wherein the main second electrode may be electrically disconnected from the dummy second electrode.

[0024] In one embodiment, the display device may further include a thin-film encapsulation layer on the second electrode, wherein the thin-film encapsulation layer may cover an interrupted portion of the light-emitting layer.

[0025] In one embodiment, the display device may further include a capping layer between the second electrode and the thin-film encapsulation layer, wherein the capping layer may cover the interrupted portion of the light-emitting layer.

[0026] In one embodiment, the display device may further include a wavelength conversion member on the thin-film encapsulation layer.

[0027] In one embodiment, a portion of the light-emitting layer disposed along the side surface of the dummy layer may have a thickness smaller than that of other portions of the light-emitting layer.

[0028] In one embodiment, a portion of the second electrode disposed along the side surface of the dummy layer may have a thickness smaller than that of other portions of the second electrode.

[0029] According to an embodiment of the present disclosure, a method of manufacturing a display device may include: forming a first electrode on a substrate; forming a pixel defining layer on the first electrode; forming a dummy layer on the uppermost surface of the pixel defining layer; forming a light-emitting layer on the first electrode and on the dummy layer; and forming a second electrode on the light-emitting layer, wherein an angle between a lower surface of the dummy layer facing the pixel defining layer and a side surface of the dummy layer adjacent to the lower surface of the dummy layer may be an acute angle.

[0030] In one embodiment, forming the dummy layer may include: forming an inorganic material layer by applying an inorganic material to an entire surface of the substrate including the first electrode and the pixel defining layer; placing a photoresist pattern on the inorganic material layer; and selectively removing the inorganic material layer by using the photoresist pattern as a mask to form the dummy layer on the uppermost surface of the pixel defining layer.

[0031] In one embodiment, the angle between the lower surface and the side surface of the dummy layer may be in a range of about 65 degrees to about 90 degrees.

[0032] In one embodiment, the dummy layer may have a trapezoidal cross-section.

[0033] In one embodiment, the dummy layer may have a width that gradually decreases in a first direction from the lower surface of the dummy layer toward the upper surface of the dummy layer facing away from the lower surface.

[0034] In one embodiment, the dummy layer may have a light yellow color.

[0035] In the display device according to the present disclosure, the display device can improve image quality.

[0036] The effects of the present disclosure are not limited to the above effects, and various other effects may be included in the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] These and / or other aspects will become apparent and more readily understood from the following description of embodiments in conjunction with the accompanying drawings, in which:

[0038] Figure 1 is a perspective view of a display device according to an embodiment;

[0039] Figure 2 is along Figure 1 a schematic cross-sectional view taken along line X1-X1';

[0040] Figure 3 is a plan view of a display device according to an embodiment;

[0041] Figure 4 is Figure 3 an enlarged plan view of region A1 of

[0042] Figure 5 is Figure 3 an enlarged plan view of region A1 of

[0043] Figure 6 is along Figure 4 and Figure 5 a schematic cross-sectional view taken along line X2-X2';

[0044] Figure 7 is Figure 6 an enlarged schematic cross-sectional view of region A2 of

[0045] Figure 8 is Figure 6 an enlarged schematic cross-sectional view of region A3 of

[0046] Figure 9 is a plan view illustrating a schematic arrangement of a dummy layer and a first color filter included in a color filter member of a display device according to an embodiment;

[0047] Figure 10A plan view schematically showing the dummy layer and the second color filter of the color filter member included in the color filter section of a display device according to an embodiment;

[0048] Figure 11 A plan view schematically showing the dummy layer and the third color filter of the color filter member included in the color filter section of a display device according to an embodiment;

[0049] Figure 12 A schematic diagram of an equivalent circuit of a pixel of a display device according to an embodiment;

[0050] Figure 13 For Figure 3 A plan view of region A1 of Figure 3 including the light-emitting section and the dummy layer included in the display device of

[0051] Figure 14 For Figure 3 A plan view of region A1 of Figure 3 including the light-emitting section and the dummy layer included in the display device of

[0052] Figure 15 For Figure 3 A plan view of region A1 of Figure 3 including the light-emitting section and the dummy layer included in the display device of

[0053] Figures 16 to 24 A schematic process cross-sectional view for explaining a method of manufacturing a display device according to an embodiment;

[0054] Figure 25 For Figure 6 An enlarged schematic cross-sectional view of region A2 of

[0055] Figure 26 A schematic diagram for explaining the effect of preventing lateral leakage current between adjacent pixels by a dummy layer in a display device according to an embodiment;

[0056] Figure 27 A chromaticity distribution schematic diagram; and

[0057] Figure 28 Illustrates the peak value of each wavelength of a display device according to an embodiment. Detailed Description

[0058] In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various embodiments or implementations of the present disclosure. As used herein, the terms "embodiment" and "implementation" are interchangeable words and are non-limiting examples of the apparatus or method disclosed herein. However, it is apparent that the various embodiments may be practiced without these specific details or with one or more equivalent arrangements. Here, the various embodiments are not necessarily exclusive and do not limit the present disclosure. For example, the specific shapes, configurations, and characteristics of one embodiment may be used or implemented in another embodiment.

[0059] Unless otherwise stated, the illustrated embodiments should be understood to provide features of the present disclosure. Thus, unless otherwise stated, the features, components, modules, layers, films, panels, regions, and / or aspects, etc. (hereinafter individually or collectively referred to as "elements") of the various embodiments may be combined, separated, interchanged, and / or rearranged in other ways without departing from the concept of the present invention.

[0060] The use of cross-hatching and / or shading in the drawings generally serves to clarify the boundaries between adjacent elements. Thus, whether or not there is cross-hatching or shading does not convey or indicate any preference or requirement for a particular material, material properties, size, proportion, commonality between the illustrated elements, and / or any other features, attributes, characteristics, etc. of the elements, unless expressly stated. Further, in the drawings, for clarity and / or descriptive purposes, the sizes and relative sizes of the elements may be enlarged. When an embodiment can be implemented differently, a particular process sequence may be performed in an order different from that described. For example, two consecutively described processes may be performed substantially simultaneously or in an order opposite to that described. Moreover, the same reference numerals and / or reference characters denote the same elements.

[0061] When an element such as a layer is referred to as being "on", "connected to", or "coupled to" another element or layer, it may be directly on, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. However, when an element or layer is referred to as being "directly on", "directly connected to", or "directly coupled to" another element or layer, there are no intervening elements or layers. For this purpose, the term "connected" may refer to a physical, electrical, and / or fluid connection with or without intervening elements. Further, the DR1 direction, DR2 direction, and DR3 direction are not limited to the directions corresponding to the three axes of a rectangular coordinate system and may be interpreted in a broader sense. For example, the DR1 direction, DR2 direction, and DR3 direction may be perpendicular to each other, or may be different directions that are not perpendicular to each other.

[0062] For the purposes of the present disclosure, "at least one of A and B" can be interpreted as only A, only B, or any combination of A and B. Moreover, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" can be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0063] Although the terms "first", "second", etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Thus, a first element discussed below may be termed a second element without departing from the teachings of the present disclosure.

[0064] Spatial relative terms such as "beneath", "below", "under", "lower", "above", "upper", "on", "over", "higher", "side" (e.g., as in "sidewall") etc. may be used herein for descriptive purposes and, thereby, to describe the relationship of one element to another element as illustrated in the figures. Spatial relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, an element described as "below" or "beneath" another element or feature would then be oriented "above" the other element or feature. Thus, the term "below" can encompass both an orientation of above and below. In addition, the device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and as such, the spatial relative descriptors used herein should be interpreted accordingly.

[0065] The terms used herein are for the purpose of describing particular embodiments and are not intended to be limiting. As used herein, unless the context clearly dictates otherwise, the singular forms "a" and "the" are also intended to include the plural forms. Moreover, the terms "comprises" and / or "comprising" when used in this specification specify the presence of the stated features, integers, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. It should also be noted that, as used herein, the terms "substantially", "about" and other similar terms are used as approximate terms and not as terms of degree, and as such, are used to consider the inherent deviations of measured, calculated, and / or provided values that would be recognized by a person of ordinary skill in the art.

[0066] In this document, various embodiments are described with reference to cross-sectional views and / or exploded views that are schematic diagrams of embodiments and / or intermediate structures. As such, variations in the shape of the diagrams due to, for example, manufacturing techniques and / or tolerances are to be expected. Accordingly, the embodiments disclosed herein should not necessarily be construed as limited to the shapes of the specifically illustrated regions, but should include, for example, shape deviations resulting from manufacturing. In this manner, the regions illustrated in the figures may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and as such, are not necessarily intended to be limiting.

[0067] In accordance with the convention in the art, some embodiments are described and illustrated in the accompanying drawings in terms of functional blocks, portions, and / or modules. Those skilled in the art will understand that these blocks, portions, and / or modules are physically implemented by electronic (or optical) circuits such as logic circuits, discrete components, microprocessors, hardwired circuits, memory elements, wiring connections, etc., which may be formed using semiconductor-like manufacturing techniques or other manufacturing techniques. In the case where the blocks, portions, and / or modules are implemented by a microprocessor or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and may optionally be driven by firmware and / or software. It is also contemplated that each block, portion, and / or module may be implemented by dedicated hardware, or as a combination of dedicated hardware for performing some functions and a processor (e.g., one or more programmed microprocessors and associated circuits) for performing other functions. Moreover, without departing from the scope of the inventive concept, each block, portion, and / or module of some embodiments may be physically separated into two or more interacting and discrete blocks, portions, and / or modules. Further, without departing from the scope of the inventive concept, the blocks, portions, and / or modules of some embodiments may be physically combined into more complex blocks, portions, and / or modules.

[0068] Unless otherwise defined or implied herein, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and this disclosure, and should not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0069] Hereinafter, specific embodiments will be described with reference to the accompanying drawings.

[0070] Figure 1 is a perspective view of a display device 1 according to an embodiment. Figure 2 is along Figure 1 a schematic cross-sectional view taken along line X1-X1'. Figure 3 is a plan view of a display device 1 according to an embodiment.

[0071] Reference Figure 1 and Figure 2 According to an embodiment, the display device 1 can be applied to a portable electronic device, such as a mobile phone, a smartphone, a tablet personal computer (PC), a mobile communication terminal, an electronic notebook, an e - book, a portable multimedia player (PMP), a navigation device, and an ultra - mobile personal computer (UMPC). As another example, the display device 1 according to an embodiment can be applied as a display unit of a television, a laptop computer, a monitor, a billboard, or an Internet of Things (IoT) device. However, these are presented only as examples, and as long as it does not deviate from the spirit of the present disclosure, the display device 1 according to an embodiment can also be used in other electronic devices.

[0072] In Figure 1 , a first direction DR1, a second direction DR2, and a third direction DR3 are defined. The first direction DR1 and the second direction DR2 can be perpendicular to each other, the first direction DR1 and the third direction DR3 can be perpendicular to each other, and the second direction DR2 and the third direction DR3 can be perpendicular to each other. It can be understood that the first direction DR1 refers to the vertical direction in the figure, the second direction DR2 refers to the horizontal direction in the figure, and the third direction DR3 refers to the up - and - down direction in the figure, such as the thickness direction. In the following description, unless otherwise specified, "direction" can refer to two directions extending to both sides in that direction. In a case where it is necessary to distinguish between two "directions" extending to both sides, one side will be called "the first side in that direction", and the other side will be called "the second side in that direction". Based on Figure 1 , the direction indicated by the arrow will be called the first side, and the direction opposite to this direction will be called the second side.

[0073] For ease of description, when referring to the surface of the display device 1 or each component constituting the display device 1, one surface facing the first side in the direction in which an image can be displayed (e.g., in the third direction DR3) will be called the upper surface, and the other surface opposite to this one surface will be called the lower surface. However, the present disclosure is not limited thereto, and one surface and the other surface of each component can also be called the front surface and the rear surface or the first surface and the second surface, respectively. When describing the relative positions of the components of the display device 1, the first side in the third direction DR3 can be called the upper side, and the second side in the third direction DR3 can be called the lower side.

[0074] The display device 1 can have a three - dimensional (3D) shape. For example, the display device 1 can have a rectangular parallelepiped shape or a 3D shape similar to a rectangular parallelepiped shape. In some embodiments, the display device 1 according to an embodiment can have a planar shape similar to a quadrilateral. In other words, the display device 1 according to an embodiment can have a planar shape similar to a quadrilateral, such as Figure 1As illustrated, it has a short side in the first direction DR1 and a long side in the second direction DR2. However, the present disclosure is not limited thereto. For example, in the planar shape of the display device 1 according to an embodiment, each corner where the short side extending in the first direction DR1 intersects the long side extending in the second direction DR2 may be rounded with a curvature (e.g., a predetermined or optional curvature) or may be a right angle. The planar shape of the display device 1 may not be limited to a quadrilateral shape, but may also be similar to other polygonal shapes, circular shapes, or elliptical shapes.

[0075] The display device 1 may include a display area DA that can display an image and a non-display area NDA that may not display an image. In some embodiments, the non-display area NDA may surround the edge of the display area DA, but the present disclosure is not limited thereto. Based on Figure 1 , a user can view the image displayed in the display area DA from a first side in the third direction DR3.

[0076] As Figure 2 illustrated, the display device 1 may include a light-emitting part 100 and a color filter part 300 facing the light-emitting part 100, and may further include a sealing member 700 that combines the light-emitting part 100 and the color filter part 300 and a filler 500 that fills the space between the light-emitting part 100 and the color filter part 300.

[0077] The light-emitting part 100 may include elements and circuits for displaying an image (e.g., pixel circuits such as switching elements), a pixel defining layer 170 in the display area DA (see, for example, Figure 6 ), and self-luminous elements. The pixel defining layer 170 defines a light-emitting area and a non-light-emitting area that will be described later. In one embodiment, the self-luminous elements may include at least one of an organic light-emitting diode, a quantum dot light-emitting diode, an inorganic material-based micro light-emitting diode (e.g., a micro LED), and an inorganic material-based nano light-emitting diode (e.g., a nano LED). For ease of description, the case where the self-luminous element is an organic light-emitting diode will be described as an example below. The light-emitting part 100 may include light-transmitting members (e.g., a first light-transmitting member TPL (see, for example, Figure 6 ), a second light-transmitting member WCL1 (see, for example, Figure 6 ), and a third light-transmitting member WCL2 (see, for example, Figure 6 )) for converting the color of incident light emitted from the above self-luminous elements and irradiated onto the color filter part 300. In some embodiments, the light-transmitting members may include at least any one of a wavelength conversion converter and a light scatterer that will be described later.

[0078] The color filter unit 300 may be located on the light emitting unit 100 and may face the light emitting unit 100. In some embodiments, the color filter unit 300 may include a color conversion pattern for converting the color of incident light provided from the light emitting unit 100. In some embodiments, the color filter unit 300 may include a color filter member 320, which will be described later, as the color conversion pattern (see, for example Figure 6 ).

[0079] The sealing member 700 may be located between the light emitting unit 100 and the color filter unit 300 in the non-display area NDA. The sealing member 700 may be disposed along the edges of the light emitting unit 100 and the color filter unit 300 in the non-display area NDA to surround the display area DA in a plan view. The light emitting unit 100 and the color filter unit 300 may be coupled to each other by the sealing member 700.

[0080] In some embodiments, the sealing member 700 may be made of an organic material. For example, the sealing member 700 may be made of an epoxy resin, but is not limited to an epoxy resin. In some embodiments, the sealing member 700 may be applied in the form of a frit including glass or the like.

[0081] The filler 500 may be located in the space disposed between the light emitting unit 100 and the color filter unit 300 and may be surrounded by the sealing member 700. The filler 500 may fill the space between the light emitting unit 100 and the color filter unit 300.

[0082] In some embodiments, the filler 500 may be made of a material capable of transmitting light. In some embodiments, the filler 500 may be made of an organic material. For example, the filler 500 may be made of a silicone-based organic material, an epoxy-based organic material, or a mixture of a silicone-based organic material and an epoxy-based organic material.

[0083] Figure 3 FIG. is a plan view of the display device 1 according to an embodiment.

[0084] Reference Figure 3 , the display device 1 may further include a flexible printed circuit board FPC and a driving chip IC.

[0085] The non-display area NDA of the display device 1 may include a pad area PDA, and a plurality of connection pads PD may be located in the pad area PDA. The pad area PDA may be defined on the light emitting unit 100. Accordingly, the connection pads PD may be disposed on the light emitting unit 100.

[0086] The flexible printed circuit board FPC may be electrically connected to the connection pads PD. The flexible printed circuit board FPC may electrically connect the light emitting unit 100 to a circuit board, which may provide signals and power for driving the display device 1.

[0087] The driving chip IC can be electrically connected to the circuit board to receive data and signals. In some embodiments, the driving chip IC can be a data driving chip IC, and can receive a data control signal and image data from the circuit board, and generate and output a data voltage corresponding to the image data.

[0088] In some embodiments, the driving chip IC can be mounted on the flexible printed circuit board FPC. For example, the driving chip IC can be mounted on the flexible printed circuit board FPC in the form of a chip on film (COF).

[0089] The data voltage provided from the driving chip IC, the power provided from the circuit board, etc. can be transmitted to the pixel circuit of the light emitting unit 100 via the flexible printed circuit board FPC and the connection pad PD, as will be described later.

[0090] Now, the plurality of light emitting regions defined in the light emitting unit 100 of the display device 1 and the plurality of light transmissive regions defined in the color filter unit 300 will be described in more detail.

[0091] Figure 4 For Figure 3 an enlarged plan view of region A1 of Figure 3 more specifically, it can be a schematic plan view of the light emitting unit 100 and the dummy layer DML included in the Figure 5 For Figure 3 an enlarged plan view of region A1 of Figure 3 more specifically, it is a schematic plan view of the light transmissive part and the dummy layer DML included in the Figure 6 For Figure 4 and Figure 5 a schematic cross-sectional view taken along line X2-X2' of Figure 7 For Figure 6 an enlarged schematic cross-sectional view of region A2 of Figure 8 For Figure 6 an enlarged schematic cross-sectional view of region A3 of Figure 9 A plan view illustrating a schematic arrangement of the first color filter 321 of the color filter member 320 included in the light transmissive part of the display device 1 according to an embodiment and the dummy layer DML. Figure 10 A plan view illustrating a schematic arrangement of the second color filter 322 of the color filter member 320 included in the light transmissive part of the display device 1 according to an embodiment and the dummy layer DML. Figure 11 A plan view illustrating a schematic arrangement of the third color filter 323 of the color filter member 320 included in the light transmissive part of the display device 1 according to an embodiment and the dummy layer DML.

[0092] Except for Figure 3 in addition to Figures 4 to 6, a plurality of light-emitting regions may be defined in the light-emitting unit 100 of the display device 1 according to an embodiment, and a plurality of light-transmitting regions may be defined in the color filter unit 300.

[0093] The display area DA and the non-display area NDA defined in the display device 1 may be applied to the light-emitting unit 100 and the color filter unit 300.

[0094] As Figure 4 illustrated, a first light-emitting region ELA_1, a second light-emitting region ELA_2, and a third light-emitting region ELA_3 may be defined in the display area DA of the light-emitting unit 100. The first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may be regions where light generated by the light-emitting elements of the light-emitting unit 100 can be emitted to the outside of the light-emitting unit 100. The non-light-emitting region NELA may be a region where light cannot be emitted to the outside of the light-emitting unit 100. In some embodiments, the non-light-emitting region NELA may surround the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 in the display area DA, but the present disclosure is not limited thereto.

[0095] In some embodiments, the light emitted to the outside from the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may be light of a first color. In some embodiments, the light of the first color may be blue light and may have a peak wavelength in the range of about 440 nm to about 480 nm. Here, the peak wavelength refers to the wavelength at which the light intensity can be the maximum.

[0096] In some embodiments, as Figure 4 illustrated, the third light-emitting region ELA_3 and the second light-emitting region ELA_2 may be sequentially positioned in the second direction DR2. The first light-emitting region ELA_1 may be located on one side of the space between the third light-emitting region ELA_3 and the second light-emitting region ELA_2. The first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may form a group.

[0097] As Figure 3 and Figure 4As illustrated, the group formed by the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may be repeatedly arranged in the display region DA in the first direction DR1 and the second direction DR2. However, the present disclosure is not limited thereto. For example, the arrangement of the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may be changed in various ways. Therefore, the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may also be sequentially positioned in the second direction DR2. For ease of description, the following will describe as an example the case where the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may be arranged as Figure 4 illustrated therein.

[0098] In some embodiments, the area of the first light-emitting region ELA_1, the area of the second light-emitting region ELA_2, and the area of the third light-emitting region ELA_3 may be substantially the same. However, the present disclosure is not limited thereto. For example, the area of the first light-emitting region ELA_1, the area of the second light-emitting region ELA_2, and the area of the third light-emitting region ELA_3 may also be different from each other. In some embodiments, the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may have a polygonal planar shape, but the present disclosure is not limited thereto. For ease of description, the following will describe an example in which the second light-emitting region ELA_2 and the third light-emitting region ELA_3 have a quadrilateral planar shape and have substantially the same area, and the first light-emitting region ELA_1 has a pentagonal planar shape and has an area smaller than that of the second light-emitting region ELA_2 (or the third light-emitting region ELA_3).

[0099] The first light-transmitting region TA_1, the second light-transmitting region TA_2, and the third light-transmitting region TA_3 may be defined in the display region DA of the color filter unit 300. The first light-transmitting region TA_1, the second light-transmitting region TA_2, and the third light-transmitting region TA_3 may be regions through which light generated from the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 of the light-emitting unit 100 can be transmitted. The light-blocking region BA may be located around the first light-transmitting region TA_1, the second light-transmitting region TA_2, and the third light-transmitting region TA_3 in the display region DA of the color filter unit 300. In some embodiments, the light-blocking region BA may surround the first light-transmitting region TA_1, the second light-transmitting region TA_2, and the third light-transmitting region TA_3. However, the present disclosure is not limited thereto. For example, the light-blocking region BA may be located in the non-display region NDA as well as in the display region DA of the color filter unit 300.

[0100] The first light-transmitting region TA_1 can correspond to and overlap with the first light-emitting region ELA_1, the second light-transmitting region TA_2 can correspond to and overlap with the second light-emitting region ELA_2, and the third light-transmitting region TA_3 can correspond to and overlap with the third light-emitting region ELA_3. In some embodiments, the first light-transmitting region TA_1 can have substantially the same area as the first light-emitting region ELA_1 and completely overlap with the first light-emitting region ELA_1, the second light-transmitting region TA_2 can have substantially the same area as the second light-emitting region ELA_2 and completely overlap with the second light-emitting region ELA_2, and the third light-transmitting region TA_3 can have substantially the same area as the third light-emitting region ELA_3 and completely overlap with the third light-emitting region ELA_3. However, the present disclosure is not limited thereto. For example, the first light-transmitting region TA_1 can also have an area different from that of the first light-emitting region ELA_1, the second light-transmitting region TA_2 can also have an area different from that of the second light-emitting region ELA_2, and the third light-transmitting region TA_3 can also have an area different from that of the third light-emitting region ELA_3. For ease of description, the case where the first light-transmitting region TA_1 has substantially the same area as the first light-emitting region ELA_1 and completely overlaps with the first light-emitting region ELA_1, the second light-transmitting region TA_2 has substantially the same area as the second light-emitting region ELA_2 and completely overlaps with the second light-emitting region ELA_2, and the third light-transmitting region TA_3 has substantially the same area as the third light-emitting region ELA_3 and completely overlaps with the third light-emitting region ELA_3 will be described below.

[0101] Accordingly, the third light-transmitting region TA_3 and the second light-transmitting region TA_2 can be sequentially positioned in the second direction DR2. The first light-transmitting region TA_1 can be located on one side of the space between the third light-transmitting region TA_3 and the second light-transmitting region TA_2. The first light-transmitting region TA_1, the second light-transmitting region TA_2, and the third light-transmitting region TA_3 can form a group. As Figure 3 and Figure 5 illustrated, the group formed by the first light-transmitting region TA_1, the second light-transmitting region TA_2, and the third light-transmitting region TA_3 can be repeatedly arranged in the display region DA in the first direction DR1 and the second direction DR2.

[0102] As described above, the light of the first color emitted from the light-emitting unit 100 can be provided to the outside of the display device 1 through the first light-transmitting region TA_1, the second light-transmitting region TA_2, and the third light-transmitting region TA_3. The light output from the first light-transmitting region TA_1 to the outside of the display device 1 can be referred to as the first output light, the light output from the second light-transmitting region TA_2 to the outside of the display device 1 can be referred to as the second output light, and the light output from the third light-transmitting region TA_3 to the outside of the display device 1 can be referred to as the third output light. The first output light can be light of the first color, the second output light can be light of the second color, and the third output light can be light of the third color.

[0103] In some embodiments, the light of the first color can be blue light having a peak wavelength in the range of about 440 nm to about 480 nm as described above, and the light of the second color can be green light having a peak wavelength in the range of about 510 nm to about 550 nm. The light of the third color can be red light having a peak wavelength in the range of about 610 nm to about 650 nm.

[0104] In the Figure 4 In the plan view illustrated as, the dummy layer DML can be disposed in the non-light-emitting region NELA. In some embodiments, the dummy layer DML can be disposed in the boundary portion between the first light-emitting region to the third light-emitting region ELA_1 to ELA_3 that form a group. For example, the dummy layer DML can include a first sub-dummy layer SDML1 and a second sub-dummy layer SDML2. The first sub-dummy layer SDML1 can be disposed between the first light-emitting region ELA_1 and the second light-emitting region ELA_2 and between the first light-emitting region ELA_1 and the third light-emitting region ELA_3. The second sub-dummy layer SDML2 can be disposed between the second light-emitting region ELA_2 and the third light-emitting region ELA_3. According to an embodiment, the dummy layer DML can have a line shape in the plan view.

[0105] According to some embodiments, the first sub-dummy layer SDML1 can have a U shape surrounding all surfaces of the first light-emitting region ELA_1 except one surface, and the second sub-dummy layer SDML2 can have an L shape facing two adjacent surfaces of the third light-emitting region ELA_3 (for example, an L shape inverted 180 degrees with respect to the first direction DR1). Here, at least a part of the U-shaped first sub-dummy layer SDML1 can be disposed between the first light-emitting region ELA_1 and the second light-emitting region ELA_2 and between the first light-emitting region ELA_1 and the third light-emitting region ELA_3 as described above. At least a part of the inverted L-shaped second sub-dummy layer SDML2 can be disposed between the second light-emitting region ELA_2 and the third light-emitting region ELA_3 as described above.

[0106] In the Figure 5In the plan view illustrated above, the dummy layer DML may be disposed in the light-blocking region BA. In some embodiments, the dummy layer DML may be disposed in a boundary portion between the first light-transmitting region to the third light-transmitting region TA_1 to TA_3 that form a group. For example, as described above, the dummy layer DML may include a first sub-dummy layer SDML1 and a second sub-dummy layer SDML2. The first sub-dummy layer SDML1 may be disposed between the first light-transmitting region TA_1 and the second light-transmitting region TA_2 and between the first light-transmitting region TA_1 and the third light-transmitting region TA_3. The second sub-dummy layer SDML2 may be disposed between the second light-transmitting region TA_2 and the third light-transmitting region TA_3.

[0107] According to some embodiments, the first sub-dummy layer SDML1 may have a U shape surrounding all surfaces of the first light-transmitting region TA_1 except for one surface, and the second sub-dummy layer SDML2 may have an L shape facing two adjacent surfaces of the third light-transmitting region TA_3 (e.g., an L shape inverted 180 degrees with respect to the first direction DR1). Here, at least a portion of the U-shaped first sub-dummy layer SDML1 may be disposed between the first light-transmitting region TA_1 and the second light-transmitting region TA_2 and between the first light-transmitting region TA_1 and the third light-transmitting region TA_3 as described above. At least a portion of the inverted L-shaped second sub-dummy layer SDML2 may be disposed between the second light-transmitting region TA_2 and the third light-transmitting region TA_3 as described above.

[0108] Now, the structure of the display device 1 will be described in detail.

[0109] Reference Figure 6 , as described above, the display device 1 may include a light-emitting unit 100, a color filter unit 300 disposed on the light-emitting unit 100 to face the light-emitting unit 100, and a filler 500 disposed between the light-emitting unit 100 and the color filter unit 300. For ease of description, the light-emitting unit 100, the color filter unit 300, and the filler 500 will be described in sequence below.

[0110] The light-emitting unit 100 may have a structure in which a first substrate 110, a buffer layer 120, a bottom metal layer BML, a first insulating layer 130, a semiconductor layer ACT, a gate insulating layer 140, a gate electrode GE, a second insulating layer 150, a source electrode SE and a drain electrode DE, a third insulating layer 160, a light-emitting element, a pixel defining layer 170, a dummy layer DML, a first capping layer CPL1, a thin film encapsulation layer TFE, and a wavelength conversion member WC are sequentially stacked on each other toward a first side in the third direction DR3.

[0111] The first substrate 110 of the light-emitting unit 100 can be used as a base of the light-emitting unit 100. The first substrate 110 can be made of a light-transmissive material. The first substrate 110 can be a glass substrate or a plastic substrate. In the case where the first substrate 110 is a plastic substrate, it can be flexible. In some embodiments, in the case where the first substrate 110 is a plastic substrate, it can include, but is not limited to, polyimide.

[0112] The buffer layer 120 of the light-emitting unit 100 can be disposed on the first substrate 110. The buffer layer 120 can block foreign substances or moisture introduced through the first substrate 110 from entering the elements disposed on the buffer layer 120.

[0113] In some embodiments, the buffer layer 120 can include inorganic materials such as SiO2, SiN x , SiON, or a combination thereof, and can be formed as a single layer or multiple layers, but the present disclosure is not limited thereto.

[0114] The bottom metal layer BML of the light-emitting unit 100 can be disposed on the buffer layer 120. The bottom metal layer BML can block external light or light emitted from a light-emitting element to be described later from entering the semiconductor layer ACT. Accordingly, generation of leakage current due to light in a thin-film transistor to be described later can be prevented, or generation of leakage current can be reduced.

[0115] The bottom metal layer BML can be made of a material that blocks light and has conductivity. In some embodiments, the bottom metal layer BML can include a single material selected from metals such as silver (Ag), nickel (Ni), gold (Au), platinum (Pt), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), and neodymium (Nd), an alloy of these metals, or a combination thereof. In some embodiments, the bottom metal layer BML can have a single-layer structure or a multi-layer structure. For example, in the case where the bottom metal layer BML has a multi-layer structure, each layer in the bottom metal layer BML can be, but is not limited to, a stacked structure of titanium (Ti) / copper (Cu) / indium tin oxide (ITO) or a stacked structure of titanium (Ti) / copper (Cu) / aluminum oxide (Al2O3).

[0116] In some embodiments, the bottom metal layer BML can correspond to and overlap with the semiconductor layer ACT, respectively. In some embodiments, the bottom metal layer BML can be wider than the semiconductor layer ACT.

[0117] In some embodiments, the bottom metal layer BML can be a data line, a power line, and a part of a line that electrically connects a thin-film transistor not illustrated in the figure to the thin-film transistors illustrated in the figure ( Figure 6 GE, ACT, DE, and SE in the figure). In some embodiments, the bottom metal layer BML can be made of a material having a resistance smaller than that of the source electrode SE and the drain electrode DE.

[0118] The first insulating layer 130 of the light-emitting unit 100 may be disposed on the bottom metal layer BML. The first insulating layer 130 may electrically insulate the bottom metal layer BML from the semiconductor layer ACT. The first insulating layer 130 may cover the bottom metal layer BML.

[0119] In some embodiments, the first insulating layer 130 may include, but is not limited to, inorganic materials such as SiO2, SiN x , SiON, Al2O3, TiO2, Ta2O, HfO2, ZrO2, or combinations thereof.

[0120] The semiconductor layer ACT of the light-emitting unit 100 may be disposed on the first insulating layer 130. The semiconductor layer ACT may correspond to a first light-emitting region ELA_1, a second light-emitting region ELA_2, and a third light-emitting region ELA_3 in the display region DA of the light-emitting unit 100, respectively. The semiconductor layer ACT may overlap the bottom metal layer BML, respectively. Accordingly, generation of photocurrent in the semiconductor layer ACT may be suppressed.

[0121] The semiconductor layer ACT may include an oxide semiconductor. In some embodiments, each of the semiconductor layers ACT may be made of a Zn-oxide-based material such as Zn oxide, In-Zn oxide, or Ga-In-Zn oxide, or may be an In-Ga-Zn-O (IGZO) semiconductor including metals such as indium (In) and gallium (Ga) in ZnO. However, the present disclosure is not limited thereto. For example, the semiconductor layer ACT may also include amorphous silicon or polycrystalline silicon.

[0122] The gate electrode GE of the light-emitting unit 100 may be disposed on the semiconductor layer ACT. The gate electrode GE may overlap the semiconductor layer ACT in the display region DA. In some embodiments, the gate electrode GE may be narrower than the semiconductor layer ACT, but the present disclosure is not limited thereto.

[0123] In some embodiments, each of the gate electrodes GE may include one or more of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) in consideration of adhesion to an adjacent layer, surface flatness of the layers stacked thereon, and processability, and may be formed as a single layer or multiple layers, but the present disclosure is not limited thereto.

[0124] The gate insulating layer 140 of the light-emitting unit 100 may be disposed between the semiconductor layer ACT and the gate electrode GE. The gate insulating layer 140 may insulate the semiconductor layer ACT from the gate electrode GE. In some embodiments, the gate insulating layer 140 may have a partially patterned shape, rather than being formed as a single layer on the surface of the first substrate 110 on the first side in the third direction DR3. The gate insulating layer 140 may be narrower than the semiconductor layer ACT and wider than the gate electrode GE, but the present disclosure is not limited thereto.

[0125] In some embodiments, the gate insulating layer 140 may include an inorganic material. For example, the gate insulating layer 140 may include one of the inorganic materials exemplified in the description of the first insulating layer 130.

[0126] The second insulating layer 150 of the light-emitting unit 100 may be disposed on the gate insulating layer 140 to cover the semiconductor layer ACT and the gate electrode GE. In some embodiments, the second insulating layer 150 may be used as a planarization layer that can provide an approximately flat surface.

[0127] The second insulating layer 150 may include an organic material. In some embodiments, the second insulating layer 150 may include, but is not limited to, at least any one of photosensitive acrylic resin (PAC), polystyrene, polymethyl methacrylate (PMMA), polyacrylonitrile (PAN), polyamide, polyimide, polyarylether, heterocyclic polymer, parylene, fluoropolymer, epoxy resin, benzocyclobutene series resin, silicone series resin, and silane resin, or a combination thereof.

[0128] The source electrode SE and the drain electrode DE of the light-emitting unit 100 may be spaced apart from each other on the second insulating layer 150. The source electrode SE and the drain electrode DE may be electrically connected to the semiconductor layer ACT through contact holes penetrating the second insulating layer 150, respectively. In some embodiments, the source electrode SE may penetrate through the first insulating layer 130 and the second insulating layer 150, and thus may be electrically connected to the bottom metal layer BML. In the case where the bottom metal layer BML is part of a line for transmitting a signal or voltage, the source electrode SE may be electrically connected and electrically coupled to the bottom metal layer BML to receive the voltage provided to the line. For example, in the case where the bottom metal layer BML is a floating pattern rather than a line, the voltage provided to the source electrode SE may be transmitted to the bottom metal layer BML.

[0129] Each of the source electrode SE and the drain electrode DE may include aluminum (Al), copper (Cu), titanium (Ti), etc., or a combination thereof, and may be formed as a multi-layer or a single layer. In some embodiments, the source electrode SE and the drain electrode DE may have, but are not limited to, a multi-layer structure of Ti / Al / Ti.

[0130] The above semiconductor layer ACT, gate electrode GE, source electrode SE, and drain electrode DE can form a thin - film transistor, which can be a switching element. In some embodiments, the thin - film transistors can be respectively located in the first light - emitting region ELA_1, the second light - emitting region ELA_2, and the third light - emitting region ELA_3. In some embodiments, a part of each of the thin - film transistors can be located in the non - light - emitting region NELA.

[0131] The third insulating layer 160 of the light - emitting unit 100 can be disposed on the second insulating layer 150 to cover the thin - film transistor. In some embodiments, the third insulating layer 160 can be a planarization layer.

[0132] The third insulating layer 160 can be made of an organic material. In some embodiments, the third insulating layer 160 can include an acrylic resin, an epoxy resin, an imide resin, an ester resin, or a combination thereof, or can include a photosensitive organic material, but the present disclosure is not limited thereto.

[0133] The anode (or the first electrode) ANO can be located on the third insulating layer 160 in the display region DA of the light - emitting unit 100.

[0134] The anode ANO can overlap with the first light - emitting region ELA_1, the second light - emitting region ELA_2, and the third light - emitting region ELA_3 respectively, and at least a part of each of the anodes ANO can extend to the non - light - emitting region NELA. The anode ANO can be electrically connected to the drain electrode DE of the thin - film transistor.

[0135] In some embodiments, the anode ANO can be a reflective electrode. Each of the anodes ANO can be a metal layer including a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or a combination thereof. In one embodiment, each of the anodes ANO can further include a metal oxide layer stacked on the metal layer. In one embodiment, the anode ANO can have a multi - layer structure, such as a two - layer structure of ITO / Ag, Ag / ITO, ITO / Mg, or ITO / MgF, or a three - layer structure of ITO / Ag / ITO.

[0136] The pixel - defining layer 170 of the light - emitting unit 100 can be disposed on the anode ANO. The pixel - defining layer 170 can define the first light - emitting region ELA_1, the second light - emitting region ELA_2, and the third light - emitting region ELA_3 as openings exposing the anode ANO.

[0137] The pixel - defining layer 170 can overlap with the light - blocking region BA of the color filter member 320 in the third direction DR3 and will be described later. The pixel - defining layer 170 can overlap with the bank member BK in the third direction DR3 and will be described later.

[0138] In some embodiments, the pixel defining layer 170 may include an organic insulating material such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, benzocyclobutene (BCB), or a combination thereof. However, the present disclosure is not limited thereto.

[0139] As Figure 6 and Figure 7 illustrated in, the dummy layer DML of the light emitting unit 100 may be disposed on the pixel defining layer 170. The dummy layer DML may overlap with the pixel defining layer 170 and contact the pixel defining layer 170. The dummy layer DML may be disposed on the uppermost surface of the pixel defining layer 170. For example, the dummy layer DML may be disposed at the highest portion of the pixel defining layer 170. Here, the height of the pixel defining layer 170 may refer to, for example, the distance from the upper surface of the substrate 110 to the upper surface of the pixel defining layer 170 in the third direction DR3.

[0140] The dummy layer DML may overlap with two adjacent anodes ANO. For example, as Figure 6 illustrated in, one side of the dummy layer DML may overlap with the anode ANO of the first light emitting region ELA_1, and the other side of the dummy layer DML may overlap with the anode ANO of the second light emitting region ELA_2 adjacent to the first light emitting region ELA_1.

[0141] The angle between the lower surface LW of the dummy layer DML and a side surface (e.g., S1) adjacent to the lower surface LW (hereinafter, referred to as the taper angle θ) may be an acute angle. For example, the taper angle θ of the dummy layer DML may be in the range of about 65 degrees to about 90 degrees. In other words, the taper angle θ between the lower surface LW of the dummy layer DML and the first side surface S1 of the dummy layer DML may be in the range of about 65 degrees to about 90 degrees, and the taper angle between the lower surface LW of the dummy layer DML and the second side surface S2 of the dummy layer DML may be in the range of about 65 degrees to about 90 degrees. According to one embodiment, the taper angle θ between the lower surface LW of the dummy layer DML and the first side surface S1 may be in the range of about 65 degrees to about 80 degrees, and the taper angle between the lower surface LW of the dummy layer DML and the second side surface S2 may be in the range of about 65 degrees to about 80 degrees.

[0142] The dummy layer DML may have a width that gradually decreases in a direction from the lower surface LW of the dummy layer DML toward the upper surface UP of the dummy layer DML (e.g., the third direction DR3). In other words, the dummy layer DML may have a width that gradually decreases in the third direction DR3 in the thickness direction of the dummy layer DML. For example, the dummy layer DML may have a trapezoidal cross-section.

[0143] The lower surface LW of the dummy layer DML may contact the upper surface of the pixel defining layer 170, and the upper surface UP of the dummy layer DML may contact the light emitting layer OL (e.g., the dummy light emitting layer to be described later). The upper surface UP of the dummy layer DML may face away from the lower surface LW of the dummy layer DML in the third direction DR3. In other words, the upper surface UP of the dummy layer DML may be disposed opposite to the lower surface LW of the dummy layer DML in the third direction DR3. The first side surface S1 and the second side surface S2 of the dummy layer DML may be symmetric with respect to the third direction DR3 by approximately 180 degrees.

[0144] The dummy layer DML may have a thickness, for example, in the range of about to about . Here, the thickness of the dummy layer DML may be the dimension of the dummy layer DML in the third direction DR3. According to one embodiment, the dummy layer DML may have a thickness in the range of about to about . According to one embodiment, the dummy layer DML may have a thickness in the range of about to about .

[0145] The dummy layer DML may include an inorganic material, or may be made of a material including an inorganic material. For example, the dummy layer DML may include an inorganic material that can be deposited at a temperature of about 360 °C or lower. According to one embodiment, the dummy layer DML may include at least one of SiN x , SiO x , and SiON, or may be made of a material including at least one of SiN x , SiO x , and SiON.

[0146] In some embodiments, the dummy layer DML may have a specific color. For example, the dummy layer DML may have a light yellow color. In an embodiment for this purpose, the dummy layer DML may be made of a material including SiN x . For example, the dummy layer DML may include silicon-rich SiN x . Here, the flow rate (sccm) ratio between the SiH4 gas and the NH3 gas used to form the dummy layer DML may be 4:1 or higher. As a specific example, the flow rate of the SiH4 gas may be four times or more than the flow rate of the NH3 gas. The dummy layer DML manufactured in such an environment may have a light yellow color.

[0147] The light-emitting layer OL of the light-emitting unit 100 may be disposed on the anode ANO. In some embodiments, the light-emitting layer OL may be in the form of a layer formed over the light-emitting regions ELA_1 to ELA_3 and the non-light-emitting region NELA. In some embodiments, the light-emitting layer OL may be located only in the display region DA. However, the present disclosure is not limited thereto. For example, a part of the light-emitting layer OL may be further disposed in the non-display region NDA. For example, the light-emitting layer OL may be further disposed on the pixel defining layer 170 and the dummy layer DML.

[0148] In some embodiments, a part of the light-emitting layer OL may be interrupted. For example, at least a part of the light-emitting layer OL may be interrupted around the dummy layer DML. Accordingly, the light-emitting layer OL may be divided into a light-emitting layer portion (hereinafter, referred to as the main light-emitting layer MOL) continuously disposed on the anode ANO and the pixel defining layer 170, and a light-emitting layer portion (hereinafter, referred to as the dummy light-emitting layer DOL) disposed on the dummy layer DML. For example, the main light-emitting layer MOL on the anode ANO and the dummy light-emitting layer DOL on the dummy layer DML may be physically separated (or electrically disconnected) from each other. This may be due to the dummy layer DML between the pixel defining layer 170 and the light-emitting layer OL. For example, since the cone angle θ of the dummy layer DML may be relatively large (e.g., in the range of about 65 degrees to about 80 degrees) as described above, the light-emitting layer OL may be separated into the main light-emitting layer MOL and the dummy light-emitting layer DOL around the dummy layer DML. According to an embodiment, although the main light-emitting layer MOL may be electrically connected to the anode ANO, the dummy light-emitting layer DOL may not be electrically connected to the anode ANO. Therefore, the voltage of the anode ANO may not be applied to the dummy light-emitting layer DOL.

[0149] Since at least a part of the light-emitting layer OL may be interrupted around the dummy layer DML as described above, a large resistance may be generated in the current path between adjacent pixels (with the dummy layer DML disposed therebetween). Accordingly, the lateral leakage current between adjacent pixels may be minimized.

[0150] According to some embodiments, a part of the main light-emitting layer MOL adjacent to the dummy layer DML may be disposed on the pixel defining layer 170.

[0151] The light-emitting layer OL will be described in more detail later.

[0152] The cathode (or second electrode) CE of the light-emitting unit 100 may be disposed on the light-emitting layer OL. In some embodiments, the cathode CE may be disposed on the light-emitting layer OL and may be in the form of a layer formed over the light-emitting regions ELA_1 to ELA_3 and the non-light-emitting region NELA. In other words, the cathode CE may completely cover the light-emitting layer OL.

[0153] In some embodiments, a portion of the cathode CE may be interrupted. For example, at least a portion of the cathode CE may be interrupted around the dummy layer DML. Accordingly, the cathode CE may be divided into a cathode portion (hereinafter referred to as the main cathode MCE) disposed on the main light-emitting layer MOL to overlap with the above-mentioned anode ANO, and a cathode portion (hereinafter referred to as the dummy cathode DCE) disposed on the dummy light-emitting layer DOL to overlap with the above-mentioned dummy layer DML. For example, the main cathode MCE on the main light-emitting layer MOL and the dummy cathode DCE on the dummy light-emitting layer DOL may be physically separated (or electrically disconnected) from each other. This may be due to the dummy layer DML having a large cone angle between the pixel defining layer 170 and the light-emitting layer OL. According to an embodiment, although the main cathode MCE may be electrically connected to a second voltage line to be described later, the dummy cathode DCE may not be electrically connected to the second voltage line. Therefore, the second voltage may not be applied to the dummy cathode DCE. Here, the second voltage line may be disposed, for example, below the cathode CE. The main cathode MCE may be electrically connected to the second voltage line below it through a laser drill hole (a type of contact hole) penetrating the insulating layer.

[0154] The cathode CE may be semi-transparent or transparent. When the thickness of the cathode CE is in the range of dozens to hundreds of angstroms , the cathode CE may be semi-transparent. In some embodiments, when the cathode CE is semi-transparent, it may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, or a compound or mixture thereof (e.g., a mixture of Ag and Mg), or a material having a multilayer structure such as LiF / Ca or LiF / Al. The cathode CE may also be transparent by including a transparent conductive oxide. In some embodiments, when the cathode CE is transparent, it may include tungsten oxide (W x O x ), titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), magnesium oxide (MgO), or a combination thereof.

[0155] The anode ANO, the light-emitting layer OL, and the cathode CE may form a light-emitting element. For example, the anode ANO, the light-emitting layer OL, and the cathode CE overlapping with the first light-emitting region ELA_1 may form a first light-emitting element, the anode ANO, the light-emitting layer OL, and the cathode CE overlapping with the second light-emitting region ELA_2 may form a second light-emitting element, and the anode ANO, the light-emitting layer OL, and the cathode CE overlapping with the third light-emitting region ELA_3 may form a third light-emitting element. Each of the first light-emitting element, the second light-emitting element, and the third light-emitting element may emit output light LE.

[0156] Reference Figure 8, the output light LE finally emitted from the light-emitting layer OL (e.g., the main light-emitting layer MOL) can be a mixture of a first component LE1 and a second component LE2. Each of the first component LE1 and the second component LE2 in the output light LE can have a peak wavelength of more than about 440 nm and less than about 480 nm. For example, the output light LE can be blue light.

[0157] In some embodiments, the light-emitting layer OL can have a structure in which multiple light-emitting material layers overlap, for example, a tandem structure such as Figure 8 illustrated. In other words, the light-emitting layer OL including the main light-emitting layer MOL and the dummy light-emitting layer DOL can have the above-described tandem structure. For example, the light-emitting layer OL can include: a first stack ST1 including a first light-emitting material layer EML1; a second stack ST2 located on the first stack ST1 and including a second light-emitting material layer EML2; a third stack ST3 located on the second stack ST2 and including a third light-emitting material layer EML3; a first charge generation layer CGL1 located between the first stack ST1 and the second stack ST2; and a second charge generation layer CGL2 located between the second stack ST2 and the third stack ST3. The first stack ST1, the second stack ST2, and the third stack ST3 can overlap with each other.

[0158] The first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 can overlap with each other.

[0159] In some embodiments, the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 can all emit light of a first color, such as blue light. For example, each of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 can be a blue light-emitting layer and can contain an organic material.

[0160] In some embodiments, at least any one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a first blue light having a first peak wavelength, and at least another one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a second blue light having a second peak wavelength different from the first peak wavelength. For example, any one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a first blue light having a first peak wavelength, and the other two of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a second blue light having a second peak wavelength. For example, the output light LE finally emitted from the light-emitting layer OL may be a mixture of a first component LE1 and a second component LE2. Here, the first component LE1 may be a first blue light having a first peak wavelength, and the second component LE2 may be a second blue light having a second peak wavelength.

[0161] In some embodiments, either one of the first peak wavelength and the second peak wavelength may be greater than or equal to about 440 nm and less than about 460 nm. The other of the first peak wavelength and the second peak wavelength may be in the range of about 460 nm to about 480 nm. However, the ranges of the first peak wavelength and the second peak wavelength are not limited to this example. For example, the ranges of both the first peak wavelength and the second peak wavelength may include about 460 nm. In some embodiments, either one of the first blue light and the second blue light may be dark blue light, and the other of the first blue light and the second blue light may be sky blue light.

[0162] According to some embodiments, the output light LE emitted from the light-emitting layer OL may be blue light and may include a long-wavelength component and a short-wavelength component. Therefore, the light-emitting layer OL may finally (or lastly) emit blue light having a relatively wide emission peak as the output light LE, thereby improving the color visibility at a side viewing angle compared to a conventional light-emitting element that emits blue light having a sharp emission peak.

[0163] In some embodiments, each of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may include a host and a dopant. The host may not be particularly limited as long as it is a commonly used material. However, for example, tris(8-hydroxyquinoline)aluminum (Alq3), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), poly(n-vinylcarbazole) (PVK), 9,10-bis(naphthalen-2-yl)anthracene (I), 4,4',4''-tris(carbazol-9-yl)-triphenylamine (TCTA), 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi), 3-tert-butyl-9,10-bis(naphthalen-2-yl)anthracene (TBADN), distyrylarylene (DSA), 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CDBP), or 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN) may be used.

[0164] Each of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 that emit blue light may include, for example, a fluorescent material, and the fluorescent material includes any one of or a combination of spiro-DPVBi, spiro-6P, distyrylbenzene (DSB), distyrylarylene (DSA), polyfluorene (PFO) - based polymers, and poly(phenylene vinylene) (PPV) - based polymers. As another example, a phosphorescent material including an organometallic complex such as (4,6-F2ppy)2Irpic may be included.

[0165] As described above, at least one of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 and at least another one of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 emit blue light in different wavelength ranges. To emit blue light in different wavelength ranges, the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may include the same material, and the resonance distance may be adjusted. As another example, to emit blue light in different wavelength ranges, at least one of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 and at least another one of the first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may include different materials.

[0166] However, the present disclosure is not limited thereto. The first emissive material layer EML1, the second emissive material layer EML2, and the third emissive material layer EML3 may also all emit blue light having a peak wavelength in the range of about 440 nm to about 480 nm and may be made of the same material.

[0167] The blue light emitted from the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may all have peak wavelengths in the range of about 440 nm to about 480 nm, and the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may be made of the same material.

[0168] As another example, in one embodiment, at least any one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a first blue light having a first peak wavelength, another one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a second blue light having a second peak wavelength different from the first peak wavelength, and another one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit a third blue light having a third peak wavelength different from the first peak wavelength and the second peak wavelength. In some embodiments, any one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be greater than about 440 nm and less than about 460 nm. Another one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be greater than about 460 nm and less than about 470 nm, and another one of the first peak wavelength, the second peak wavelength, and the third peak wavelength may be in the range of about 470 nm to about 480 nm.

[0169] According to some embodiments, the output light LE emitted from the light-emitting layer OL may be blue light and may include a long-wavelength component, a medium-wavelength component, and a short-wavelength component. Accordingly, the light-emitting layer OL may finally emit blue light having a wide emission peak as the output light LE and improve color visibility at a side viewing angle.

[0170] According to the above embodiments, it may be possible to improve the light efficiency and extend the lifespan of the display device 1 as compared with a conventional light-emitting element that does not employ a tandem structure (e.g., a structure in which a plurality of light-emitting material layers are stacked on one another).

[0171] As another example, in some embodiments, at least any one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit light of a first color, such as blue light, and at least another one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may emit light of a second color, such as green light. In some embodiments, the blue light emitted from at least any one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may have a peak wavelength in the range of about 440 nm to about 480 nm or in the range of about 460 nm to about 480 nm. The green light emitted from at least another one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may have a peak wavelength in the range of about 510 nm to about 550 nm.

[0172] For example, any one of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may be a green light-emitting layer OL (or green light-emitting material layer) that emits green light, and the other two of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may be blue light-emitting layers OL (or blue light-emitting material layers) that emit blue light. In the case where the other two of the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 are blue light-emitting layers OL (or blue light-emitting material layers), the peak wavelengths of the blue light emitted from the two blue light-emitting layers OL (or two blue light-emitting material layers) may be in the same range or in different ranges.

[0173] According to some embodiments, the output light LE emitted from the light-emitting layer OL may be a mixture of a first component LE1 that may be blue light and a second component LE2 that may be green light. For example, in the case where the first component LE1 is deep blue light and the second component LE2 is green light, the output light LE may be light having a sky blue color. As in the above embodiments, the output light LE emitted from the light-emitting layer OL may be a mixture of blue light and green light, and may include a long-wavelength component and a short-wavelength component. Therefore, the light-emitting layer OL may finally emit blue light having a relatively wide emission peak as the output light LE, and improve the color visibility at a side viewing angle. Since the second component LE2 of the output light LE may be green light, the green light component may be supplemented in the light provided from the display device 1 to the outside. Accordingly, the color reproducibility of the display device 1 may be improved.

[0174] In some embodiments, the green light-emitting material layer among the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3 may include a host and a dopant. The host included in the green light-emitting material layer may not be particularly limited as long as it can be a commonly used material. However, for example, tris(8-hydroxyquinoline)aluminum (Alq3), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), poly(n-vinylcarbazole) (PVK), 9,10-bis(naphthalen-2-yl)anthracene (I), 4,4',4''-tris(carbazol-9-yl)-triphenylamine (TCTA), 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBi), 3-tert-butyl-9,10-bis(naphthalen-2-yl)anthracene (TBADN), distyrylarylene (DSA), 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CDBP), 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN), or a combination thereof may be used.

[0175] The dopant included in the green light-emitting material layer may be, for example, a fluorescent material including tris(8-hydroxyquinoline)aluminum(III) (Alq3), or may be a phosphorescent material such as Ir(ppy)3 (fac tris(2-phenylpyridine)iridium), Ir(ppy)2(acac) (bis(2-phenylpyridine)(acetylacetonate)iridium(III)), iridium(mpyp)3 (2-phenyl-4-methyl-pyridine iridium), or a combination thereof.

[0176] The first charge generation layer CGL1 may be located between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 may inject charges into each light-emitting layer OL (or each light-emitting material layer). The first charge generation layer CGL1 may control the charge balance between the first stack ST1 and the second stack ST2. The first charge generation layer CGL1 may include an n-type charge generation layer CGL11 and a p-type charge generation layer CGL12. The p-type charge generation layer CGL12 may be disposed on the n-type charge generation layer CGL11 and may be located between the n-type charge generation layer CGL11 and the second stack ST2.

[0177] The first charge generation layer CGL1 may have a structure in which the n-type charge generation layer CGL11 and the p-type charge generation layer CGL12 may be in contact with each other. The n-type charge generation layer CGL11 may be disposed closer to the anode ANO of the anode ANO and the cathode CE. The p-type charge generation layer CGL12 may be disposed closer to the cathode CE of the anode ANO and the cathode CE. The n-type charge generation layer CGL11 supplies electrons to the first light-emitting material layer EML1 adjacent to the anode ANO, and the p-type charge generation layer CGL12 supplies holes to the second light-emitting material layer EML2 included in the second stack ST2. Since the first charge generation layer CGL1 may be disposed between the first stack ST1 and the second stack ST2 to provide charges to each light-emitting layer OL (or each light-emitting material layer), the light-emitting efficiency can be improved and the driving voltage can be reduced.

[0178] In Figure 6 it, the anode ANO corresponding to the first light-emitting region ELA_1 may be defined as the first anode, the anode ANO corresponding to the second light-emitting region ELA_2 may be defined as the second anode, and the anode ANO corresponding to the third light-emitting region ELA_3 may be defined as the third anode. The first stack ST1 may be located on the first anode, the second anode, and the third anode. Here, the first stack ST1 may further include a first hole transport layer HTL1, a first electron blocking layer BIL1, and a first electron transport layer ETL1.

[0179] The first hole transport layer HTL1 may be located on the first anode, the second anode, and the third anode. The first hole transport layer HTL1 may facilitate the transport of holes and may include a hole transport material. The hole transport material may include, but is not limited to, carbazole derivatives such as N-phenylcarbazole or polyvinylcarbazole, fluorene derivatives, triphenylamine derivatives such as N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine (TPD) or 4,4',4''-tris(N-carbazolyl)triphenylamine (TCTA), N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC), or a combination thereof.

[0180] The first electron blocking layer BIL1 may be located on the first hole transport layer HTL1 and may be located between the first hole transport layer HTL1 and the first light-emitting material layer EML1. The first electron blocking layer BIL1 may include a hole transport material and a metal or a metal compound in order to prevent electrons generated by the first light-emitting material layer EML1 from entering the first hole transport layer HTL1. In some embodiments, the first hole transport layer HTL1 and the first electron blocking layer BIL1 may be formed as a single layer in which their respective materials may be mixed.

[0181] The first electron transport layer ETL1 may be located on the first light-emitting material layer EML1 and may be located between the first charge generation layer CGL1 and the first light-emitting material layer EML1. In some embodiments, the first electron transport layer ETL1 may comprise an electron transport material such as tris(8-hydroxyquinoline)aluminum (Alq3), 1,3,5-tris(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBi), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ), 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (tBu-PBD), bis(2-methyl-8-hydroxyquinolinato-N1,O8)-(1,1'-biphenyl-4-olato)aluminum (BAlq), bis(benzoquinolinato-10-hydroxy)beryllium (Bebq2), 9,10-di(naphthalen-2-yl)anthracene (I), or a mixture thereof. However, the present disclosure is not limited to the type of electron transport material. The second stack ST2 may be located on the first charge generation layer CGL1 and may further include a second hole transport layer HTL2, a second electron blocking layer BIL2, and a second electron transport layer ETL2.

[0182] The second hole transport layer HTL2 may be located on the first charge generation layer CGL1. The second hole transport layer HTL2 may be made of the same material as the first hole transport layer HTL1 or may include one or more materials selected from the materials exemplified as being included in the first hole transport layer HTL1. The second hole transport layer HTL2 may be composed of a single layer or multiple layers.

[0183] The second electron blocking layer BIL2 may be located on the second hole transport layer HTL2 and may be located between the second hole transport layer HTL2 and the second light-emitting material layer EML2. The second electron blocking layer BIL2 may have the same material and structure as the first electron blocking layer BIL1 or may include one or more materials selected from the materials exemplified as being included in the first electron blocking layer BIL1.

[0184] The second electron transport layer ETL2 may be located on the second light-emitting material layer EML2 and may be located between the second charge generation layer CGL2 and the second light-emitting material layer EML2. The second electron transport layer ETL2 may have the same material and structure as the first electron transport layer ETL1 or may include one or more materials selected from the materials exemplified as being included in the first electron transport layer ETL1. The second electron transport layer ETL2 may be composed of a single layer or multiple layers.

[0185] The second charge generation layer CGL2 may be located on the second stack ST2 and may be located between the second stack ST2 and the third stack ST3.

[0186] The second charge generation layer CGL2 may have the same structure as the first charge generation layer CGL1 described above. For example, the second charge generation layer CGL2 may include an n-type charge generation layer CGL21 disposed closer to the second stack ST2 and a p-type charge generation layer CGL22 disposed closer to the cathode CE. The p-type charge generation layer CGL22 may be disposed on the n-type charge generation layer CGL21.

[0187] The second charge generation layer CGL2 may have a structure in which the n-type charge generation layer CGL21 and the p-type charge generation layer CGL22 may be in contact with each other. The first charge generation layer CGL1 and the second charge generation layer CGL2 may be made of different materials or the same materials.

[0188] The third stack ST3 may be located on the second charge generation layer CGL2 and may further include a third hole transport layer HTL3 and a third electron transport layer ETL3.

[0189] The third hole transport layer HTL3 may be located on the second charge generation layer CGL2. The third hole transport layer HTL3 may be made of the same material as the first hole transport layer HTL1 or may include one or more materials selected from the materials exemplified as being included in the first hole transport layer HTL1. The third hole transport layer HTL3 may be composed of a single layer or multiple layers. In the case where the third hole transport layer HTL3 is composed of multiple layers, these layers may include different materials.

[0190] The third electron transport layer ETL3 may be located on the third light-emitting material layer EML3 and may be located between the cathode CE and the third light-emitting material layer EML3. The third electron transport layer ETL3 may have the same material and structure as the first electron transport layer ETL1 or may include one or more materials selected from the materials exemplified as being included in the first electron transport layer ETL1. The third electron transport layer ETL3 may be composed of a single layer or multiple layers. In the case where the third electron transport layer ETL3 is composed of multiple layers, these layers may include different materials.

[0191] Although not illustrated in the figures, the hole injection layer may further be located in at least any one of the spaces between the first stack ST1 and the first anode, the second anode, and the third anode, between the second stack ST2 and the first charge generation layer CGL1, and between the third stack ST3 and the second charge generation layer CGL2. The hole injection layer may facilitate the injection of holes into the first light-emitting material layer EML1, the second light-emitting material layer EML2, and the third light-emitting material layer EML3. In some embodiments, the hole injection layer may be made of any one or more of, but not limited to, copper phthalocyanine (CuPc), poly(3,4-ethylenedioxythiophene) (PEDOT), polyaniline (PANI), and N,N'-dinaphthyl-N,N'-diphenylbenzidine (NPD). In some embodiments, the hole injection layer may be located between the first stack ST1 and the first anode, the second anode, and the third anode, between the second stack ST2 and the first charge generation layer CGL1, and between the third stack ST3 and the second charge generation layer CGL2.

[0192] Although not illustrated in the figures, the electron injection layer may further be located in at least any one of the spaces between the third electron transport layer ETL3 and the cathode CE, between the second charge generation layer CGL2 and the second stack ST2, and between the first charge generation layer CGL1 and the first stack ST1. The electron injection layer may facilitate the injection of electrons and may use tris(8-hydroxyquinoline) aluminum (Alq3), PBD, TAZ, spiro-PBD, BAlq, or SAlq, but the present disclosure is not limited thereto. The electron injection layer may be a metal halide compound, such as any one or more of MgF2, LiF, NaF, KF, RbF, CsF, FrF, LiI, NaI, KI, RbI, CsI, FrI, and CaF2, but the present disclosure is not limited thereto. The electron injection layer may also include a lanthanum material such as Yb, Sm, or Eu. As another example, the electron injection layer may include both a metal halide material and a lanthanum material, such as RbI:Yb or KI:Yb. In the case where the electron injection layer includes both a metal halide material and a lanthanum material, the electron injection layer may be formed by co-deposition of the metal halide material and the lanthanum material. In some embodiments, the electron injection layer may be located between the third electron transport layer ETL3 and the cathode CE, between the second charge generation layer CGL2 and the second stack ST2, and between the first charge generation layer CGL1 and the first stack ST1.

[0193] In some embodiments, the organic light-emitting layer OL may not include a red light-emitting material layer and thus may not emit light of a third color, such as red light. In other words, the output light LE may not include a light component having a peak wavelength in the range of about 610 nm to about 650 nm and may only include a light component having a peak wavelength in the range of about 440 nm to about 550 nm.

[0194] According to an embodiment, the light-emitting layer OL may be interrupted by a dummy layer DML. This may mean that at least one layer included in the light-emitting layer OL, such as the first hole transport layer HTL1, the first electron blocking layer BIL1, the first light-emitting material layer EML1, the first electron transport layer ETL1, the n-type charge generation layer CGL11, the p-type charge generation layer CGL12, the second hole transport layer HTL2, the second electron blocking layer BIL2, the second light-emitting material layer EML2, the second electron transport layer ETL2, the n-type charge generation layer CGL21, the p-type charge generation layer CGL22, the third hole transport layer HTL3, the third light-emitting material layer EML3, and the third electron transport layer ETL3, may all be interrupted.

[0195] According to an embodiment, the main light-emitting layer MOL may include the above-mentioned first hole transport layer HTL1, the first electron blocking layer BIL1, the first light-emitting material layer EML1, the first electron transport layer ETL1, the n-type charge generation layer CGL11, the p-type charge generation layer CGL12, the second hole transport layer HTL2, the second electron blocking layer BIL2, the second light-emitting material layer EML2, the second electron transport layer ETL2, the n-type charge generation layer CGL21, the p-type charge generation layer CGL22, the third hole transport layer HTL3, the third light-emitting material layer EML3, and the third electron transport layer ETL3.

[0196] According to an embodiment, the dummy light-emitting layer DOL may include the above-mentioned first hole transport layer HTL1, the first electron blocking layer BIL1, the first light-emitting material layer EML1, the first electron transport layer ETL1, the n-type charge generation layer CGL11, the p-type charge generation layer CGL12, the second hole transport layer HTL2, the second electron blocking layer BIL2, the second light-emitting material layer EML2, the second electron transport layer ETL2, the n-type charge generation layer CGL21, the p-type charge generation layer CGL22, the third hole transport layer HTL3, the third light-emitting material layer EML3, and the third electron transport layer ETL3.

[0197] Return reference Figure 6 , the first capping layer CPL1 may be disposed on the cathode CE. The first capping layer CPL1 may improve the viewing angle characteristics and increase the external light emission efficiency. The first capping layer CPL1 may be commonly disposed in the first light-emitting region ELA_1, the second light-emitting region ELA_2, the third light-emitting region ELA_3, and the non-light-emitting region NELA. The first capping layer CPL1 may completely cover the cathode CE.

[0198] The first capping layer CPL1 may include at least any one of an inorganic material and an organic material having light-transmitting properties. In other words, the first capping layer CPL1 may be made of an inorganic layer or an organic layer, or may be made of an organic layer containing inorganic particles. In some embodiments, the first capping layer CPL1 may include, but is not limited to, triamine derivatives, carbazole biphenyl derivatives, aromatic diamine derivatives, tris(8-hydroxyquinoline) aluminum complex (Alq3), or a combination thereof.

[0199] In some embodiments, the first capping layer CPL1 may be disposed on the cathode CE to overlap with the above-described dummy layer DML. The first capping layer CPL1 may not be interrupted. Accordingly, the first capping layer CPL1 may cover the interrupted portion of the light-emitting layer OL and / or the interrupted portion of the cathode CE.

[0200] The thin film encapsulation layer TFE of the light-emitting unit 100 may be disposed on the first capping layer CPL1. The thin film encapsulation layer TFE may protect the elements located below the thin film encapsulation layer TFE from external foreign substances such as moisture. The thin film encapsulation layer TFE may be commonly disposed in the first light-emitting region ELA_1, the second light-emitting region ELA_2, the third light-emitting region ELA_3, and the non-light-emitting region NELA. The thin film encapsulation layer TFE may completely cover the first capping layer CPL1.

[0201] The thin film encapsulation layer TFE may include a lower inorganic layer TFEa, an organic layer TFEb, and an upper inorganic layer TFEc that are sequentially stacked on each other on the first capping layer CPL1.

[0202] The lower inorganic layer TFEa may completely cover the first capping layer CPL1 in the display region DA to cover the first light-emitting element, the second light-emitting element, and the third light-emitting element.

[0203] The organic layer TFEb may be disposed on the lower inorganic layer TFEa to cover the first light-emitting element, the second light-emitting element, and the third light-emitting element.

[0204] The upper inorganic layer TFEc may be disposed on the organic layer TFEb to completely cover the organic layer TFEb.

[0205] In some embodiments, each of the lower inorganic layer TFEa and the upper inorganic layer TFEc may be made of, but is not limited to, silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiON), lithium fluoride, or a combination thereof.

[0206] In some embodiments, the organic layer TFEb may be made of, but is not limited to, an acrylic resin, a methacrylic resin, polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a perylene resin, or a combination thereof.

[0207] In some embodiments, the thin film encapsulation layer TFE may be disposed on the first capping layer CPL1 to overlap with the above-described dummy layer DML. The thin film encapsulation layer TFE may be uninterrupted. Accordingly, the thin film encapsulation layer TFE may cover the interrupted portion of the light emitting layer OL and / or the interrupted portion of the cathode CE.

[0208] The wavelength conversion member WC of the light emitting unit 100 may be disposed on the thin film encapsulation layer TFE. The wavelength conversion member WC may emit red, green, and blue light by converting the wavelength of the light emitted from the light emitting element layer.

[0209] The wavelength conversion member WC may include a first wavelength conversion layer TPL, a second wavelength conversion layer WCL1, a third wavelength conversion layer WCL2, a barrier member BK, and a second capping layer CPL2.

[0210] The barrier member BK may define a space in which the wavelength conversion layers to be described later may be disposed. The barrier member BK may surround the first wavelength conversion layer TPL, the second wavelength conversion layer WCL1, and the third wavelength conversion layer WCL2 in a plan view. The barrier member BK may overlap with the non-light emitting area NELA of the light emitting unit 100 and the light blocking area BA of the color filter unit 300. The barrier member BK may not overlap with the light emitting areas ELA_1 to ELA_3 of the light emitting unit 100 and the light transmitting areas TA_1 to TA_3 of the color filter unit 300.

[0211] In some embodiments, the barrier member BK may include, but is not limited to, a photocurable organic material (e.g., a photocurable organic material including a light blocking material).

[0212] The wavelength conversion member WC of the light emitting unit 100 may include a first wavelength conversion layer TPL overlapping with the first light transmitting area TA_1, a second wavelength conversion layer WCL1 overlapping with the second light transmitting area TA_2, and a third wavelength conversion layer WCL2 overlapping with the third light transmitting area TA_3.

[0213] The first wavelength conversion layer TPL may be disposed in the space defined by the barrier member BK and may overlap with the first light emitting area ELA_1 and the first light transmitting area TA_1 in the third direction DR3. The first wavelength conversion layer TPL may contact (e.g., directly contact) the second capping layer CPL2 and the barrier member BK.

[0214] The first wavelength conversion layer TPL may be a light transmitting pattern that transmits incident light. Specifically, the output light LE provided by the first light emitting element may be blue light as described above and may pass through the first wavelength conversion layer TPL and the first filtering pattern area 321a of the first color filter 321 to leave the display device 1. In other words, the first output light L1 emitted from the first light emitting area ELA_1 through the first light transmitting area TA_1 to the outside may be blue light.

[0215] The first wavelength conversion layer TPL may include a base resin 330 and a light scatterer 331.

[0216] The base resin 330 may be made of an organic material having a high light transmittance. In some embodiments, the base resin 330 may include, but is not limited to, organic materials such as epoxy resins, acrylic resins, cardo resins, imide resins, or combinations thereof.

[0217] The light scatterer 331 may have a refractive index different from that of the base resin 330 and may form an optical interface with the base resin 330. The light scatterer 331 may be light-scattering particles. The light scatterer 331 may scatter incident light in random directions without substantially converting the wavelength of the incident light passing through the light-transmitting region TA_1, regardless of the incident direction of the incident light.

[0218] The light scatterer 331 may be a material that scatters at least a portion of the transmitted light and may include metal oxide particles or organic particles. In some embodiments, the light scatterer 331 may include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), tin oxide (SnO2), or combinations thereof as metal oxides, and may include acrylic resin or urethane resin as organic particles, but the present disclosure is not limited thereto.

[0219] The second wavelength conversion layer WCL1 may be disposed in a space defined by the bank member BK and may overlap with the second light-emitting region ELA_2 and the second light-transmitting region TA_2 in the third direction DR3. The second wavelength conversion layer WCL1 may contact (e.g., directly contact) the second capping layer CPL2 and the bank member BK.

[0220] The second wavelength conversion layer WCL1 may be a wavelength conversion pattern that converts or transforms the peak wavelength of incident light into another specific peak wavelength and outputs light having a specific peak wavelength. Specifically, the output light LE provided by the second light-emitting element may be blue light as described above, and when it passes through the second wavelength conversion layer WCL1 and the second filter pattern region 322a of the second color filter 322, it may be converted into green light having a peak wavelength in the range of about 510 nm to about 550 nm. Accordingly, the green light may be emitted to the outside of the display device 1. In other words, the second output light L2 emitted from the second light-emitting region ELA_2 through the second light-transmitting region TA_2 to the outside may be green light.

[0221] The second wavelength conversion layer WCL1 may include a base resin 330, a light scatterer 331 dispersed in the base resin 330, and a first wavelength converter 332 dispersed in the base resin 330.

[0222] The first wavelength converter 332 can convert or transform the peak wavelength of the incident light into another specific peak wavelength. The first wavelength converter 332 can convert the output light LE (which can be blue light provided by the second light-emitting element) into green light having a single peak wavelength in the range of about 510 nm to about 550 nm and output the green light.

[0223] In some embodiments, the first wavelength converter 332 can be, but is not limited to, quantum dots, quantum rods, or phosphors. For ease of description, the case where the first wavelength converter 332 is a quantum dot will be described below. A quantum dot can be a particulate material that emits light of a specific color when an electron jumps from the conduction band to the valence band. A quantum dot can be a semiconductor nanocrystal material. A quantum dot can have a specific bandgap depending on its composition and size. Therefore, a quantum dot can absorb light and emit light with a unique wavelength. Examples of semiconductor nanocrystals of quantum dots include Group IV nanocrystals, Group II-VI compound nanocrystals, Group III-V compound nanocrystals, Group IV-VI nanocrystals, and combinations thereof.

[0224] The Group II-VI compounds can be selected from: binary compounds selected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; ternary compounds selected from CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and quaternary compounds selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and mixtures thereof.

[0225] The group III-V compound can be selected from: binary compounds selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, and mixtures thereof; and quaternary compounds selected from GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, GaAlNP, and mixtures thereof.

[0226] The group IV-VI compound can be selected from: binary compounds selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; ternary compounds selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and quaternary compounds selected from SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. The group IV element can be selected from silicon (Si), germanium (Ge), and mixtures thereof. The group IV compound can be a binary compound selected from silicon carbide (SiC), silicon germanide (SiGe), and mixtures thereof.

[0227] Here, the binary, ternary, or quaternary compound can be present in the particles at a uniform concentration or can be present at partially different concentrations in the same particles. They can have a core / shell structure in which one quantum dot surrounds another quantum dot. The interface between the core and the shell can have a concentration gradient in which the concentration of the element present in the shell decreases towards the center.

[0228] In some embodiments, the quantum dot can have a core-shell structure, which can include a core containing the above-mentioned nanocrystals and a shell surrounding the core. The shell of each quantum dot can be used as a protective layer for maintaining semiconductor properties by preventing chemical denaturation of the core and / or as a charging layer for imparting electrophoretic properties to the quantum dot. The shell can be a single layer or multiple layers. The interface between the core and the shell can have a concentration gradient in which the concentration of the element present in the shell decreases towards the center. The shell of each quantum dot can include, for example, metal oxides or non-metal oxides, semiconductor compounds, or combinations thereof.

[0229] For example, the metal oxide or non-metal oxide may be, but is not limited to, binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4 or NiO, or ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4 or combinations thereof.

[0230] The semiconductor compound may be, but is not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb or combinations thereof.

[0231] The light emitted from the first wavelength converter 332 may have a full width at half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less. Therefore, the color purity and color reproducibility of the display device 1 can be further improved. The light emitted from the first wavelength converter 332 may be radiated in various directions regardless of the incident direction of the incident light. Therefore, the lateral visibility of the second color displayed in the second light-transmitting region TA_2 can be improved.

[0232] A part of the output light LE provided by the second light-emitting element may be transmitted through the second wavelength conversion layer WCL1 without being converted into green light by the first wavelength converter 332. In the output light LE, the component that is incident on the second filter pattern region 322a of the second color filter 322 and is not wavelength-converted by the second wavelength conversion layer WCL1 may be blocked by the second filter pattern region 322a. On the other hand, the green light obtained by wavelength-converting the output light LE by the second wavelength conversion layer WCL1 may be transmitted through the second filter pattern region 322a and emitted to the outside. For example, the second output light L2 emitted to the outside of the display device 1 through the second light-transmitting region TA_2 may be green light.

[0233] The third wavelength conversion layer WCL2 may be disposed in the space defined by the bank member BK and may overlap the third light-emitting region ELA_3 and the third light-transmitting region TA_3 in the third direction DR3. The third wavelength conversion layer WCL2 may contact (e.g., directly contact) the second capping layer CPL2 and the bank member BK.

[0234] The third wavelength conversion layer WCL2 may be a wavelength conversion pattern that converts or transforms the peak wavelength of incident light into another specific peak wavelength and outputs light having a specific peak wavelength. Specifically, the output light LE provided by the third light-emitting element may be blue light as described above, and when it passes through the third wavelength conversion layer WCL2 and the third filtering pattern area 323a of the third color filter 323, it may be converted into red light having a peak wavelength in the range of about 610 nm to about 650 nm. Accordingly, the red light may be emitted to the outside of the display device 1. In other words, the third output light L3 emitted to the outside through the third light-transmitting area TA_3 from the third light-emitting area ELA_3 may be red light.

[0235] The third wavelength conversion layer WCL2 may include a base resin 330, a light scatterer 331 dispersed in the base resin 330, and a second wavelength converter 333 dispersed in the base resin 330.

[0236] The second wavelength converter 333 may convert or transform the peak wavelength of incident light into another specific peak wavelength. The second wavelength converter 333 may convert the output light LE (which may be blue light provided by the third light-emitting element) into red light having a single peak wavelength in the range of about 610 nm to about 650 nm and output the red light. In some embodiments, the second wavelength converter 333 may be, but is not limited to, quantum dots, quantum rods, or phosphors. In the case where the second wavelength converter 333 is quantum dots, they may have substantially the same composition as the above-described first wavelength converter 332 in the case where the first wavelength converter 332 is quantum dots. Therefore, the description of the second wavelength converter 333 will be omitted.

[0237] A part of the output light LE provided by the third light-emitting element may pass through the third wavelength conversion layer WCL2 without being converted into red light by the second wavelength converter 333. In the output light LE, the component that is incident on the third filtering pattern area 323a of the third color filter 323 and is not wavelength-converted by the third wavelength conversion layer WCL2 may be blocked by the third filtering pattern area 323a. On the other hand, the red light obtained by converting the output light LE by the third wavelength conversion layer WCL2 may pass through the third filtering pattern area 323a and be emitted to the outside. For example, the third output light L3 emitted to the outside of the display device 1 through the third light-transmitting area TA_3 may be red light.

[0238] The color filter unit 300 may be disposed on the wavelength conversion member WC of the light-emitting unit 100. The color filter unit 300 may have a structure in which the second substrate 310 and the color filter member 320 are sequentially stacked on each other on the second side in the third direction DR3.

[0239] In addition to Figure 6 other than, now refer to Figures 9 to 11Describe the color filter unit 300 in detail.

[0240] The second substrate 310 of the color filter unit 300 can be used as a base of the color filter unit 300. The second substrate 310 can be made of a light-transmitting material. The second substrate 310 can be a glass substrate or a plastic substrate. In the case where the second substrate 310 is a plastic substrate, it can be flexible. In some embodiments, in the case where the second substrate 310 is a plastic substrate, it can include, but is not limited to, polyimide. Since the light-emitting unit 100 and the color filter unit 300 face each other in the third direction DR3 as described above, the first substrate 110 of the light-emitting unit 100 and the second substrate 310 of the color filter unit 300 can face each other in the third direction DR3.

[0241] The color filter member 320 of the color filter unit 300 can be disposed between the second substrate 310 and the filler 500. The color filter member 320 can include a filter pattern region and a light-blocking pattern portion BM. The light-blocking pattern portion BM can surround the filter pattern region. The filter pattern of the color filter member 320 can define a light-transmitting region of the color filter unit 300, and the light-blocking pattern portion BM can define a light-blocking region BA of the color filter unit 300.

[0242] As Figure 6 and Figures 9 to 11 illustrated, the color filter member 320 can include a first color filter 321, a second color filter 322, and a third color filter 323. The first color filter 321 can absorb both the second light and the third light other than the first light, the second color filter 322 can absorb both the first light and the third light other than the second light, and the third color filter 323 can absorb both the first light and the second light other than the third light. In other words, the first color filter 321 can transmit the first light, the second color filter 322 can transmit the second light, and the third color filter 323 can transmit the third light.

[0243] In some embodiments, the first color filter 321 can be a blue color filter and can include a blue colorant. As used herein, the term "colorant" is a concept encompassing both dyes and pigments. The first color filter 321 can include a base resin, and the blue colorant can be dispersed in the base resin. In some embodiments, the second color filter 322 can be a green color filter and can include a green colorant. The second color filter 322 can include a base resin, and the green colorant can be dispersed in the base resin. In some embodiments, the third color filter 323 can be a red color filter and can include a red colorant. The third color filter 323 can include a base resin, and the red colorant can be dispersed in the base resin.

[0244] The first color filter 321 may include a first filter pattern area 321a and a first light-blocking pattern area 321b surrounding the first filter pattern area 321a. The second color filter 322 may include a second filter pattern area 322a and a second light-blocking pattern area 322b surrounding the second filter pattern area 322a. The third color filter 323 may include a third filter pattern area 323a and a third light-blocking pattern area 323b surrounding the third filter pattern area 323a. Specifically, the first filter pattern area 321a of the first color filter 321 may overlap with the first light-transmitting area TA_1, and the first light-blocking pattern area 321b of the first color filter 321 may surround the first filter pattern area 321a that overlaps with the first light-transmitting area TA_1. However, the first light-blocking pattern area 321b of the first color filter 321 may not overlap with the second light-transmitting area TA_2 and the third light-transmitting area TA_3, but may overlap with the light-blocking area BA. The second filter pattern area 322a of the second color filter 322 may overlap with the second light-transmitting area TA_2, and the second light-blocking pattern area 322b of the second color filter 322 may surround the second filter pattern area 322a that overlaps with the second light-transmitting area TA_2. However, the second light-blocking pattern area 322b of the second color filter 322 may not overlap with the first light-transmitting area TA_1 and the third light-transmitting area TA_3, but may overlap with the light-blocking area BA. The third filter pattern area 323a of the third color filter 323 may overlap with the third light-transmitting area TA_3, and the third light-blocking pattern area 323b of the third color filter 323 may surround the third filter pattern area 323a that overlaps with the third light-transmitting area TA_3. However, the third light-blocking pattern area 323b of the third color filter 323 may not overlap with the first light-transmitting area TA_1 and the second light-transmitting area TA_2, but may overlap with the light-blocking area BA. In other words, the filter pattern areas of the color filter member 320 may include the first filter pattern area 321a of the first color filter 321, the second filter pattern area 322a of the second color filter 322, and the third filter pattern area 323a of the third color filter 323, and the light-blocking pattern portion BM may have a structure in which the first light-blocking pattern area 321b of the first color filter 321b, the second light-blocking pattern area 322b of the second color filter 322, and the third light-blocking pattern area 323b of the third color filter 323 may be stacked on one another.

[0245] The first filter pattern area 321a of the first color filter 321 may be used as a blocking filter that blocks red light and green light. Specifically, the first filter pattern area 321a may transmit first light (e.g., blue light) and block or absorb second light (e.g., green light) and third light (e.g., red light).

[0246] The second filter pattern region 322a of the second color filter 322 can be used as a blocking filter that blocks blue light and red light. Specifically, the second filter pattern region 322a can transmit second light (e.g., green light) and block or absorb first light (e.g., blue light) and third light (e.g., red light).

[0247] The third filter pattern region 323a of the third color filter 323 can be used as a blocking filter that blocks blue light and green light. Specifically, the third filter pattern region 323a can transmit third light (e.g., red light) and block or absorb first light (e.g., blue light) and second light (e.g., green light).

[0248] In some embodiments, the light-blocking pattern portion BM may have a structure in which the first light-blocking pattern region 321b, the third light-blocking pattern region 323b, and the second light-blocking pattern region 322b are sequentially stacked on one another in a third direction DR3. However, the present disclosure is not limited thereto. For example, the light-blocking pattern portion BM may not be composed of the color filters 321 to 323 described above, but may be formed of an organic light-blocking material. For example, it may be formed by coating and exposing an organic light-blocking material. For ease of description, a case where the light-blocking pattern portion BM has a structure in which the first light-blocking pattern region 321b, the third light-blocking pattern region 323b, and the second light-blocking pattern region 322b are sequentially stacked on one another in a third direction DR3 will be described below. The light-blocking pattern portion BM can absorb all of the first light, second light, and third light through the above configuration.

[0249] As described above, the filler 500 can be disposed between the light-emitting portion 100 and the color filter portion 300 to fill the space between the light-emitting portion 100 and the color filter portion 300. Specifically, in some embodiments, the filler 500 can contact (e.g., directly contact) the second capping layer CPL2 of the light-emitting portion 100 and the color filter member 320 of the color filter portion 300. However, the present disclosure is not limited thereto.

[0250] In some embodiments, the filler 500 can be made of a material having an extinction coefficient that can be substantially zero. The refractive index and the extinction coefficient can be related, and the extinction coefficient decreases as the refractive index decreases. In the case where the refractive index is about 1.7 or less, the extinction coefficient can substantially converge to zero. In some embodiments, the filler 500 can be made of a material having a refractive index of about 1.7 or less. Accordingly, it is possible to prevent the light provided by the self-luminous element from being absorbed by the filler 500 when it passes through the filler 500, or to minimize the absorption of light by the filler 500. In some embodiments, the filler 500 can be made of an organic material having a refractive index in the range of about 1.4 to about 1.6.

[0251] Figure 12 Schematic diagram of an equivalent circuit of a pixel of the display device 1 according to an embodiment.

[0252] Reference Figure 12 As shown in Figure 12 , the pixel PX of the display device 1 according to the embodiment may include a light-emitting diode EL, a plurality of transistors T1 to T3, and a storage capacitor Cst.

[0253] The light-emitting diode EL emits light according to the current supplied through the first transistor T1. The light-emitting diode EL may include a first electrode (e.g., an anode), a second electrode (e.g., a cathode), and at least one light-emitting element disposed therebetween. The light-emitting element may emit light within a specific wavelength range in response to electrical signals received from the first electrode and the second electrode.

[0254] One end of the light-emitting diode EL may be electrically connected to the source electrode of the first transistor T1, and the other end may be electrically connected to a second voltage line VL2 that may be supplied with a low-potential voltage (e.g., a second power supply voltage) lower than the high-potential voltage (e.g., a first power supply voltage) of the first voltage line VL1.

[0255] The first transistor T1 adjusts the current flowing from the first voltage line VL1, which may be supplied with the first power supply voltage, to the light-emitting diode EL according to the voltage difference between the gate electrode and the source electrode. For example, the first transistor T1 may be a driving transistor for driving the light-emitting diode EL. The first transistor T1 may have a gate electrode electrically connected to the source electrode of the second transistor T2, a source electrode electrically connected to the first electrode of the light-emitting diode EL, and a drain electrode electrically connected to the first voltage line VL1 to which the first power supply voltage may be applied.

[0256] The second transistor T2 may be turned on by a scanning signal of the scanning line SL to connect the data line DTL to the gate electrode of the first transistor T1. The second transistor T2 may have a gate electrode electrically connected to the scanning line SL, a source electrode electrically connected to the gate electrode of the first transistor T1, and a drain electrode electrically connected to the data line DTL.

[0257] The third transistor T3 may be turned on by a scanning signal of the scanning line SL to connect the initialization voltage line VIL to the said one end of the light-emitting diode EL. The third transistor T3 may have a gate electrode electrically connected to the scanning line SL, a drain electrode electrically connected to the initialization voltage line VIL, and a source electrode electrically connected to the said one end of the light-emitting diode EL or the source electrode of the first transistor T1.

[0258] In one embodiment, the source electrodes and drain electrodes of each of the transistors T1 to T3 are not limited to the above description, and the opposite may also be the case. Each of the transistors T1 to T3 may be formed as a thin-film transistor. Although it has been described in Figure 12The case where each of transistors T1 to T3 can be an N-type metal oxide semiconductor field effect transistor (MOSFET) is described, but the present disclosure is not limited thereto. For example, each of transistors T1 to T3 can also be formed as a P-type MOSFET, or some of them can be formed as N-type MOSFETs, and some of them can be formed as P-type MOSFETs.

[0259] The storage capacitor Cst can be formed between the gate electrode and the source electrode of the first transistor T1. The storage capacitor Cst stores the differential voltage between the gate voltage and the source voltage of the first transistor T1.

[0260] In Figure 12 In an embodiment, the gate electrodes of the second transistor T2 and the third transistor T3 can be electrically connected to the same scan line SL. Therefore, the second transistor T2 and the third transistor T3 can be turned on simultaneously by a scan signal transmitted from the same scan line. However, the present disclosure is not limited to this case. The gate electrode of the second transistor T2 can also be electrically connected to any one scan line SL, and the gate electrode of the third transistor T3 can be electrically connected to another scan line SL different from the above scan line SL.

[0261] In some embodiments, Figure 12 the pixel PX of Figure 4 can include any one of the first light emitting region to the third light emitting region ELA_1 to ELA_3 of the above

[0262] Figure 13 For being corresponding to the region A1 of Figure 3 is a modified plan view, more specifically, a modified schematic plan view of the light emitting unit 100c and the dummy layer DMLc included in a modified version of the display device of Figure 3 The display device of

[0263] Figure 13 differs from the display device of the above Figure 4 in the position of the light emitting region, the shape of the light emitting region, the position of the dummy layer DMLc, and the shape of the dummy layer DMLc. Therefore, these differences will be described as follows.

[0264] As Figure 13As illustrated, the first light-emitting region ELA_1, the second light-emitting region ELA_2, and the third light-emitting region ELA_3 may be arranged in a row in the opposite direction of the second direction DR2 (hereinafter, referred to as the second opposite direction). Here, the first color filter 321 may be disposed in the first light-emitting region ELA_1, the second color filter 322 may be disposed in the second light-emitting region ELA_2, and the third color filter 323 may be disposed in the third light-emitting region ELA_3.

[0265] The dummy layer DMLc may include a first sub-dummy layer SDML1c, a second sub-dummy layer SDML2c, and a third sub-dummy layer SDML3c.

[0266] The first sub-dummy layer SDML1c may be disposed around the first light-emitting region ELA_1 to face three surfaces of the first light-emitting region ELA_1. The first sub-dummy layer SDML1c may have, for example, a ']' shape.

[0267] The second sub-dummy layer SDML2c may be disposed between the first light-emitting region ELA_1 and the second light-emitting region ELA_2.

[0268] The third sub-dummy layer SDML3c may be disposed around the third light-emitting region ELA_3 to face three surfaces of the third light-emitting region ELA_3. At least a part of the third sub-dummy layer SDML3c may be disposed between the third light-emitting region ELA_3 and the second light-emitting region ELA_2. The third sub-dummy layer SDML3c may have, for example, a ']' shape.

[0269] Along Figure 13 The schematic cross-sectional view taken along the line X2-X2' may be the same as the above Figure 6 schematic cross-sectional view.

[0270] Figure 14 For Figure 3 a plan view corresponding to the region A1 of Figure 3 more specifically, a modified schematic plan view of the light-emitting unit 100' and the dummy layer DML' included in a modified version of the display device of

[0271] Figure 14 The display device of Figure 4 may be different from the above

[0272] As Figure 14 illustrated, the dummy layer DML' may have a dot shape. For example, the first sub-dummy layer SDML1' may be disposed around the first light-emitting region ELA_1 in a dot (or interrupted) shape, and the second sub-dummy layer SDML2' may be disposed around the third light-emitting region ELA_3 in a dot shape.

[0273] Figure 15 For the modified plan view corresponding to region A1 of Figure 3 , more specifically, a modified schematic plan view of the light-emitting part 100” and the dummy layer DML” included in the display device of Figure 3 .

[0274] Figure 15 The display device of Figure 13 may be different from the above-mentioned display device in the shape of the dummy layer DML”. Therefore, this difference will be described as follows.

[0275] As exemplified in Figure 15 , the dummy layer DML” may have a dot shape. For example, the first sub-dummy layer SDML1” may be arranged in a dot shape around the first light-emitting region ELA_1, and the second sub-dummy layer SDML2” may be arranged in a dot shape between the first light-emitting region ELA_1 and the second light-emitting region ELA_2. The third sub-dummy layer SDML3” may be arranged in a dot shape around the third light-emitting region ELA_3.

[0276] The dot-shaped dummy layer DML” may be more effective in preventing lateral leakage current in a display device having fine pixels (such as an augmented reality (AR) and virtual reality (VR) display device). For example, because the dot-shaped dummy layer DML” can generate a greater resistance in the current path between adjacent pixels, the dot-shaped dummy layer DML” can more effectively reduce the lateral leakage current in a display device having a fine pixel structure, in which the distance between adjacent pixels may be quite short.

[0277] Figures 16 to 24 is a schematic process cross-sectional view for explaining a method of manufacturing a display device according to an embodiment. For example, Figures 16 to 24 may be a schematic process cross-sectional view for explaining a method of manufacturing the display device exemplified in the above Figure 7 .

[0278] First, as exemplified in Figure 16 , a substrate 110 provided with an anode ANO may be prepared.

[0279] As exemplified in Figure 17 , a pixel defining layer 170 may be provided on the anode ANO. For example, the pixel defining layer 170 may be provided in the non-light-emitting region NELA to overlap with the edge of the anode ANO.

[0280] As Figure 18As illustrated, an inorganic material, which may be a raw material of the dummy layer DML, may be deposited on the entire surface of the substrate 110 including the pixel defining layer 170 and the anode ANO. Accordingly, the inorganic material layer DM_S may be formed to cover the entire surface of the substrate 110 including the pixel defining layer 170 and the anode ANO. For example, the inorganic material may be deposited on the substrate 110 at a temperature of about 360 °C or lower to form the inorganic material layer DM_S (e.g., a low-temperature inorganic material layer). According to one embodiment, the inorganic material layer DM_S may be made of a material including at least one of SiN x , SiO x , and SiON. According to one embodiment, the inorganic material layer DM_S may be deposited on the substrate 110 through a chemical vapor deposition (CVD) process. Accordingly, in the deposition process of the inorganic material layer DM_S, only NF3 excluding O2 may be used. Here, during the deposition process of the inorganic material layer DM_S, the chamber in which the substrate 110 including the inorganic material layer DM_S is placed may be maintained in a high vacuum and high power (e.g., high RF power) state.

[0281] According to one embodiment, the inorganic material layer DM_S may include, for example, silicon-rich SiN x . The flow rate (sccm) ratio between the SiH4 gas and the NH3 gas used to form the inorganic material layer DM_S may be about 4:1 or higher. As a specific example, the flow rate of the SiH4 gas may be four times or more the flow rate of the NH3 gas. The inorganic material layer DM_S manufactured in such an environment inside the chamber may have a pale yellow color.

[0282] As Figure 19 illustrated, the photoresist pattern PR may be disposed on the inorganic material layer DM_S. For example, the photoresist pattern PR may be disposed on the inorganic material layer DM_S to overlap with the pixel defining layer 170. The photoresist pattern PR may define a portion of the inorganic material layer DM_S that can be used as the dummy layer DML.

[0283] As Figure 20 illustrated, the etching process may be performed using the photoresist pattern PR as a mask. The etching process may be performed using a dry etching method. As another example, the etching process may be performed using a wet etching method.

[0284] In the case where the above etching process is performed and completed, as Figure 21 illustrated, the dummy layer DML may be formed between the pixel defining layer 170 and the photoresist pattern PR. As described above, the dummy layer DML may have a large cone angle θ in the range of about 65 degrees to about 80 degrees.

[0285] As Figure 22As illustrated, the photoresist pattern PR can be removed. For example, the photoresist pattern PR can be removed by a stripping solution.

[0286] As Figure 23 As illustrated, the light-emitting layer OL can be deposited on the substrate 110 including the dummy layer DML. Here, since the dummy layer DML has a relatively large taper angle θ, the light-emitting layer OL can be interrupted around the dummy layer DML. Accordingly, the light-emitting layer OL can be divided into the main light-emitting layer MOL on the anode ANO and the dummy light-emitting layer DOL on the dummy layer DML.

[0287] As Figure 24 As illustrated, the cathode CE can be disposed on the light-emitting layer OL. Here, since the dummy layer DML has a relatively large taper angle θ, the cathode CE can be interrupted around the dummy layer DML. Accordingly, the cathode CE can be divided into the main cathode MCE on the main light-emitting layer MOL and the dummy cathode DCE on the dummy layer DML.

[0288] As described above Figure 6 and Figure 7 As illustrated, the first capping layer CPL1, the lower inorganic layer TFEa, the organic layer TFEb, and the upper inorganic layer TFEc can be sequentially formed on the cathode CE.

[0289] As described above Figure 6 As illustrated, the wavelength conversion member WC can be disposed on the upper inorganic layer TFEc.

[0290] Figure 25 is a schematic cross-sectional view of the display device 1b according to an embodiment.

[0291] Figure 25 The display device 1b can be different from the above-described Figure 7 display device 1 in the shapes of the light-emitting layer OLb and the cathode CEb. Therefore, such differences will be described as follows.

[0292] As Figure 25As illustrated, the light-emitting layer OLb may be continuously disposed on the anode ANO, the pixel defining layer 170, and the dummy layer DML. In other words, the light-emitting layer OLb may be continuous without interruption around the dummy layer DML. Here, a portion of the light-emitting layer OLb that may be disposed on the side surface along the side surface of the dummy layer DML may have a thickness smaller than that of other portions of the light-emitting layer OLb. For example, the thickness TK2 of the light-emitting layer OLb on the second side surface S2 of the dummy layer DML may be smaller than the thickness TK1 of the light-emitting layer OLb on the pixel defining layer 170 (or the upper surface of the anode ANO or the dummy layer DML). Similarly, the thickness of the light-emitting layer OLb on the first side surface S1 of the dummy layer DML may be smaller than the thickness of the light-emitting layer OLb on the pixel defining layer 170 (or the upper surface of the anode ANO or the dummy layer DML).

[0293] The cathode CEb may be continuously disposed on the anode ANO, the pixel defining layer 170, and the dummy layer DML. In other words, the cathode CEb may be continuous without interruption around the dummy layer DML. Here, a portion of the cathode CEb that may be disposed on the side surface along the side surface of the dummy layer DML may have a thickness smaller than that of other portions of the cathode CEb. For example, the thickness TK4 of the cathode CEb on the first side surface S1 of the dummy layer DML may be smaller than the thickness TK3 of the cathode CEb on the pixel defining layer 170 (or the upper surface of the anode ANO or the dummy layer DML). Similarly, the thickness of the cathode CEb on the second side surface S2 of the dummy layer DML may be smaller than the thickness of the cathode CEb on the pixel defining layer 170 (or the upper surface of the anode ANO or the dummy layer DML).

[0294] Since the thickness of the light-emitting layer OLb around the dummy layer DML may be relatively small, a large resistance may be generated in the current path between pixels (with the dummy layer DML disposed therebetween) disposed adjacent to each other. Accordingly, the lateral leakage current between adjacent pixels may be minimized.

[0295] Figure 26 It is a schematic diagram for explaining the effect of preventing the lateral leakage current between adjacent pixels by the dummy layer DML in the display device according to the embodiment.

[0296] As Figure 26As illustrated, the first pixel PX1 may be a pixel including the first light-emitting region ELA_1 described above, and the third pixel PX3 may be a pixel including the third light-emitting region ELA_3. The first pixel PX1 and the third pixel PX3 may be adjacent to each other. Here, the first pixel PX1 and the third pixel PX3 may be pixels included in the same pixel unit or may be pixels included in different pixel units. For example, the first pixel PX1 may be any one of three pixels included in the first pixel unit, and the third pixel PX3 may be any one of three pixels included in the third pixel unit.

[0297] Here, the first light-emitting diode EL1 of the first pixel PX1 may include a plurality of light-emitting elements EL1-1 to EL1-4 connected in series between the first transistor T1 provided in the first pixel PX1 and the second voltage line VL2, and the third light-emitting diode EL3 of the third pixel PX3 may include a plurality of light-emitting elements EL3-1 to EL3-4 connected in series between the first transistor T1 included in the third pixel PX3 and the second voltage line VL2. In Figure 26 it, as an example, the first light-emitting diode EL1 and the third light-emitting diode EL3 may be illustrated as four-series light-emitting diodes, each including four light-emitting elements.

[0298] As described above, since the light-emitting layer OL can be interrupted (or electrically disconnected) by the dummy layer DML between the first light-emitting region ELA_1 and the second light-emitting region ELA_2 (as well as between the first light-emitting region ELA_1 and the third light-emitting region ELA_3 and between the second light-emitting region ELA_2 and the third light-emitting region ELA_3), a large resistance can be generated between the light-emitting elements EL1-1 to EL1-4 of the first light-emitting diode EL1 and the light-emitting elements EL3-1 to EL3-4 of the third light-emitting diode EL3. In other words, an equivalent circuit can be established as if a large number of resistors R are provided between the first pixel PX1 including the first light-emitting region ELA_1 and the third pixel PX3 including the third light-emitting region ELA_3. Accordingly, the lateral leakage current between the first pixel PX1 and the third pixel PX3 can be minimized. For example, the lateral leakage current between the first pixel PX1 providing blue light and the third pixel PX3 providing red light can be minimized. Therefore, in the case where the third light-emitting diode EL3 of the third pixel PX3 is turned on and the first light-emitting diode EL1 of the first pixel PX1 is turned off, the problem that the first light-emitting diode EL1 of the first pixel PX1 is turned on by the lateral leakage current from the turned-on third pixel PX3 can be solved. For example, if, when the third pixel PX3 is turned on, the lateral leakage current from the third pixel PX3 is supplied to the first pixel PX1, the red light from the third pixel PX3 and the blue light from the first pixel PX1 may be mixed with each other. Due to the lateral leakage current from the third pixel PX3, sufficient current (e.g., driving current) may not be supplied to the third light-emitting diode EL3 of the third pixel PX3, thereby deteriorating the color purity of the red light. However, if the light-emitting layer OL can be partially interrupted by the dummy layer DML between adjacent pixels as in the embodiment, the lateral leakage current can be minimized due to the increased resistance. Accordingly, the color mixing phenomenon and the color purity deterioration phenomenon can be prevented, thereby improving the image quality of the display device.

[0299] Figure 27 is a schematic diagram of chromaticity distribution.

[0300] The first diagram CR1 may be a diagram representing a reference color space (e.g., a color space or a color gamut in the visible light region), the second diagram CR2 may be a diagram representing a color space (or a color gamut) defined by Digital Cinema Initiative (DCI)-P3, and the third diagram CR3 may be a diagram representing a color space (or a color gamut) defined based on the measurement of an image of a display device according to an embodiment.

[0301] The third diagram CR3 may include three vertices. The first vertex P1_R may represent the red region, the second vertex P2_G may represent the green region, and the third vertex P3_B may represent the blue region.

[0302] As Figure 27As illustrated, the third graph CR3 including the first vertex P1_R can surround the second graph CR2 and has an area larger than that of the second graph CR2. Accordingly, the display device according to the embodiment can satisfy the color purity defined in DCI-P3. For example, in the display device according to the embodiment, the color purity of red can be improved, and color mixing can be prevented. For example, the display device according to the embodiment can provide a high color purity corresponding to 99.2% of the color space defined by DCI-P3. The display device according to the embodiment can show a low color mixing rate of 0.3%.

[0303] Figure 28 Illustrate the peak of each wavelength of the display device 1 according to the embodiment.

[0304] As Figure 28 As illustrated, in the display device 1 according to the embodiment, in the red wavelength region R255, the green wavelength region G255, and the blue wavelength region B255, the peak of each wavelength can be maintained at a high value with little noise. Accordingly, in the display device 1 according to the embodiment, the color purity can be improved.

[0305] According to an embodiment, since the light emitting layer OL and the wavelength conversion member WC are disposed adjacent to each other, there is a possibility of color mixing between adjacent pixels. However, since the dummy layer DML is disposed on the pixel defining layer between adjacent pixels, the color mixing phenomenon can be minimized.

[0306] According to an embodiment, when the dummy layer DML has a color different from the colors provided from adjacent pixels, it can block the light provided from the light emitting layer OL of the adjacent pixels, thereby further improving the color mixing prevention effect. For example, when the light emitting layer OL of a pixel provides blue light, the dummy layer DML can have a color different from blue (for example, red or green). It may be difficult for the blue light emitted from the light emitting layer OL of the pixel to enter the wavelength conversion layer corresponding to the adjacent pixel. This is because the dummy layer DML having a color different from blue can be disposed on the pixel defining layer between adjacent pixels. Accordingly, the problem that a pixel emits light during the light emitting period of another pixel adjacent to the pixel can be solved. Ultimately, color mixing between adjacent pixels can be prevented, and the color purity can be improved.

[0307] In the display device according to the embodiment, color mixing can be prevented, and the color purity can be improved. Accordingly, the image quality of the display device can be improved.

[0308] However, the effects of the present disclosure are not limited to the effects described herein. By referring to the claims, the above and other effects of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains.

[0309] At the end of the detailed description, those skilled in the art will understand that many variations and modifications can be made to the embodiments without materially departing from the principles of the present disclosure. Accordingly, the disclosed embodiments of the present disclosure are used only in a general and descriptive sense and not for purposes of limitation.

Claims

1. A display device, comprising: a first electrode on a substrate; a pixel defining layer on the first electrode; a dummy layer disposed on the uppermost surface of the pixel defining layer; a light-emitting layer on the first electrode and the dummy layer; and a second electrode on the light-emitting layer, wherein an angle between a lower surface of the dummy layer facing the pixel defining layer and a side surface of the dummy layer adjacent to the lower surface of the dummy layer is an acute angle.

2. The display device according to claim 1, wherein the angle between the lower surface and the side surface of the dummy layer is in a range of 65 degrees to 90 degrees.

3. The display device according to claim 1, wherein the dummy layer has a trapezoidal cross-section.

4. The display device according to claim 3, wherein the dummy layer has a width that gradually decreases in a first direction from the lower surface of the dummy layer toward an upper surface of the dummy layer facing away from the lower surface.

5. The display device according to claim 1, wherein the dummy layer has a light yellow color.

6. The display device according to claim 1, wherein: the pixel defining layer has a light-emitting region provided to correspond to a portion of the light-emitting layer disposed on the first electrode, and in a plan view, the dummy layer is disposed around the light-emitting region.

7. The display device according to claim 6, wherein: the pixel defining layer defines a plurality of light-emitting regions, and in the plan view, at least a portion of the dummy layer is disposed between adjacent light-emitting regions among the plurality of light-emitting regions.

8. The display device according to claim 1, wherein the dummy layer has a linear shape in a plan view.

9. The display device according to claim 1, wherein the dummy layer has a dot shape in a plan view.

10. The display device according to claim 1, wherein the dummy layer includes an inorganic material.

11. The display device according to claim 10, wherein the dummy layer contains at least one of SiN x , SiO x and SiON.

12. The display device according to claim 1, wherein the dummy layer has a thickness in the range of to .

13. The display device according to claim 1, wherein a portion of the light-emitting layer on the first electrode and a portion of the light-emitting layer on the dummy layer are electrically disconnected.

14. The display device according to claim 13, wherein the light-emitting layer includes: a main light-emitting layer on the first electrode; and a dummy light-emitting layer disposed on the dummy layer, wherein the dummy light-emitting layer is separated from the main light-emitting layer.

15. The display device according to claim 1, wherein a portion of the second electrode overlapping the first electrode in a plan view and a portion of the second electrode overlapping the dummy layer in the plan view are electrically disconnected.

16. The display device according to claim 15, wherein the second electrode includes: a main second electrode disposed on the light-emitting layer to overlap the first electrode; and a dummy second electrode disposed on the light-emitting layer to overlap the dummy layer, wherein the main second electrode is electrically disconnected from the dummy second electrode.

17. The display device according to claim 1, further comprising: a thin film encapsulation layer on the second electrode, wherein the thin film encapsulation layer covers an interrupted portion of the light-emitting layer.

18. The display device according to claim 17, further comprising: a capping layer between the second electrode and the thin film encapsulation layer, wherein the capping layer covers the interrupted portion of the light emitting layer.

19. The display device according to claim 17, further comprising: a wavelength conversion member on the thin film encapsulation layer.

20. The display device according to claim 1, wherein a portion of the light emitting layer disposed along the side surface of the dummy layer has a thickness smaller than that of other portions of the light emitting layer.

21. The display device according to claim 1, wherein a portion of the second electrode disposed along the side surface of the dummy layer has a thickness smaller than that of other portions of the second electrode.

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