Display panel, display device and preparation method of display panel

Abstract

The embodiment of the invention provides a display panel, a display device and a preparation method of the display panel, and the display panel comprises a substrate which is provided with a first side; the light-emitting unit is arranged on the first side, and the light-emitting unit comprises a first carrier layer; the photoelectric sensing unit is arranged on the first side, the photoelectric sensing unit is configured to receive optical signals and generate corresponding electric signals according to the optical signals, the photoelectric sensing unit comprises a photoelectric conversion layer, a second carrier layer and a blending layer which are arranged in a stacked mode, and the blending layer is arranged between the photoelectric conversion layer and the second carrier layer; wherein at least part of the first carrier layer and at least part of the second carrier layer are made of the same material, and the material of the blending layer comprises at least part of the material of the second carrier layer and at least part of the material of the photoelectric conversion layer. By adding the blending layer, the potential barrier between the carrier layer and the photoelectric sensing structure can be reduced, and the performance of the photoelectric sensing structure is improved.

Description

Technical Field

[0001] The present application relates to the technical field of display devices, and in particular to a display panel, a display device, and a method for manufacturing a display panel. Background Art

[0002] Biometrics plays an important role in smartphones and tablets. The common existing technologies include facial recognition and fingerprint recognition, among which fingerprint recognition includes ultrasonic fingerprint, capacitive fingerprint and optical fingerprint. Among them, optical fingerprint has the advantages of high resolution, high sensitivity and can be used for life and health detection. Summary of the invention

[0003] The embodiments of the present application provide a display panel, a display device, and a method for manufacturing a display panel, aiming to improve the performance of a photodetector in a display panel.

[0004] An embodiment of the first aspect of the present application provides a display panel, comprising: a substrate having a first side; a light-emitting unit arranged on the first side, the light-emitting unit comprising a first carrier layer; and a photoelectric sensing unit arranged on the first side, the photoelectric sensing unit being configured to receive a light signal and generate a corresponding electrical signal according to the light signal, the photoelectric sensing unit comprising a stacked photoelectric conversion layer, a second carrier layer and a mixed layer, the mixed layer being arranged between the photoelectric conversion layer and the second carrier layer; wherein at least part of the material of the first carrier layer and the second carrier layer is the same, and the material of the mixed layer comprises at least part of the material of the second carrier layer and at least part of the material of the photoelectric conversion layer.

[0005] According to the implementation of the first aspect of the present application, the material of the photoelectric conversion layer includes a donor material and an acceptor material, and the second carrier layer includes:

[0006] The second hole transport layer is located on the side of the photoelectric conversion layer facing the substrate, and the material of the mixed layer includes the material of the second hole transport layer and the donor material; and / or,

[0007] The second hole blocking layer is located on the side of the photoelectric conversion layer away from the substrate, and the material of the mixed layer includes the material of the second hole blocking layer and the acceptor material.

[0008] According to any of the aforementioned implementations of the first aspect of the present application.

[0009] According to any of the aforementioned embodiments of the first aspect of the present application, the light-emitting unit further includes a light-emitting structure, and the first carrier layer includes:

[0010] A first hole transport layer is located on the side of the light-emitting layer facing the substrate, and the first hole transport layer and the second hole transport layer are made of the same material; and / or,

[0011] The first hole blocking layer is located on the side of the light-emitting layer away from the substrate, and the materials of the first hole blocking layer and the second hole blocking layer are the same.

[0012] According to any of the foregoing embodiments of the first aspect of the present application, the first hole transport layer and the second hole transport layer are of an integral structure, and / or the first hole blocking layer and the second hole blocking layer are of an integral structure.

[0013] According to any of the foregoing embodiments of the first aspect of the present application, the blend layer includes a first mixed sub-layer, and the first mixed sub-layer is located between the second hole transport layer and the photoelectric conversion layer. The material of the first mixed sub-layer includes the material of the second hole transport layer and the donor material.

[0014] According to any of the foregoing embodiments of the first aspect of the present application, the first mixed sub-layer includes two or more first sub-layers, and in the direction of the second hole transport layer approaching the photoelectric conversion layer, the concentration of the donor material in the first sub-layer gradually increases.

[0015] According to any of the foregoing embodiments of the first aspect of the present application, the donor material in the first mixed sub-layer has a first amount of substance, the material of the second hole transport layer in the first mixed sub-layer has a second amount of substance, and the ratio of the first amount of substance to the second amount of substance is not less than 10% and not greater than 90%.

[0016] According to any of the foregoing embodiments of the first aspect of the present application, the thickness of the first mixed sub-layer is not less than 1 nanometer and not greater than 20 nanometers.

[0017] According to any of the foregoing embodiments of the first aspect of the present application, the blend layer includes a second mixed sub-layer, and the second mixed sub-layer is located between the second hole blocking layer and the photoelectric conversion layer. The material of the second mixed sub-layer includes the material of the second hole blocking layer and the acceptor material.

[0018] According to any of the foregoing embodiments of the first aspect of the present application, the second mixed sub-layer includes two or more second sub-layers, and in the direction of the second hole blocking layer approaching the photoelectric conversion layer, the concentration of the acceptor material in the second sub-layer gradually increases.

[0019] According to any of the foregoing embodiments of the first aspect of the present application, the acceptor material in the second mixed sub-layer has a third amount of substance, the material of the second hole blocking layer in the second mixed sub-layer has a fourth amount of substance, and the ratio of the third amount of substance to the fourth amount of substance is not less than 10% and not greater than 90%.

[0020] According to any of the foregoing embodiments of the first aspect of the present application, the thickness of the second mixed sub-layer is not less than 1 nanometer and not greater than 20 nanometers.

[0021] According to any of the foregoing embodiments of the first aspect of the present application, the orthographic projection of the optoelectronic conversion layer on the substrate is located within the orthographic projection of the blend layer on the substrate.

[0022] According to any of the foregoing embodiments of the first aspect of the present application, a plurality of blend layers are spaced apart on one side of the carrier layer, and the blend layers and the optoelectronic conversion layers are provided in one-to-one correspondence;

[0023] Alternatively, the light-emitting unit includes a light-emitting structure, and the orthographic projections of the light-emitting structure and the optoelectronic conversion layer on the substrate are located within the orthographic projection of the blend layer on the substrate.

[0024] An embodiment of the second aspect of the present application further provides a display device, including the display panel provided in any of the foregoing embodiments of the first aspect.

[0025] An embodiment of the third aspect of the present application further provides a method for manufacturing a display panel, including:

[0026] Providing a substrate having a first side;

[0027] Preparing a first carrier layer of a light-emitting unit and a second carrier layer of an optoelectronic sensing unit on the first side, wherein the optoelectronic sensing unit is configured to receive an optical signal and generate a corresponding electrical signal according to the optical signal, and at least part of the materials of the first carrier layer and the second carrier layer are the same;

[0028] On a side of the second carrier layer facing away from the substrate, co-evaporating a donor material and at least part of the material of the second carrier layer to form a blend layer;

[0029] Preparing an optoelectronic conversion layer on a side of the blend layer facing away from the second carrier layer, wherein the material of the optoelectronic conversion layer includes a donor material.

[0030] According to the embodiment of the third aspect of the present application, providing a substrate having a first side;

[0031] Preparing a first carrier layer of a light-emitting unit and a second carrier layer of an optoelectronic sensing unit on the first side, wherein the optoelectronic sensing unit is configured to receive an optical signal and generate a corresponding electrical signal according to the optical signal, and at least part of the materials of the first carrier layer and the second carrier layer are the same;

[0032] On a side of the second carrier layer facing away from the substrate, co-evaporating a donor material and at least part of the material of the second carrier layer to form a blend layer;

[0033] Preparing an optoelectronic conversion layer on a side of the blend layer facing away from the second carrier layer, wherein the material of the optoelectronic conversion layer includes a donor material.

[0034] An embodiment of the third aspect of the present application further provides a method for manufacturing a display panel, including:

[0035] Provide a substrate having a first side;

[0036] Prepare a photo - electric conversion layer of a photo - electric sensing unit on the first side, the material of the photo - electric conversion layer including an acceptor material, wherein the photo - electric sensing unit is configured to receive an optical signal and generate a corresponding electrical signal according to the optical signal;

[0037] On the side of the photo - electric conversion layer facing away from the substrate, co - evaporate a carrier material and an acceptor material to form a blend layer;

[0038] Prepare a first carrier layer of a light - emitting unit on the first side and a second carrier layer on the side of the blend layer facing away from the photo - electric conversion layer, wherein at least part of the materials of the first carrier layer and the second carrier layer are the same, and the second carrier layer includes a carrier material.

[0039] According to the embodiment of the third aspect of the present application, the first carrier layer includes a first hole - blocking layer, the second carrier layer includes a second hole - blocking layer, and the step of preparing a first carrier layer of a light - emitting unit on the first side and a second carrier layer on the side of the blend layer facing away from the photo - electric conversion layer includes:

[0040] Use the same mask to prepare the first hole - blocking layer and the second hole - blocking layer.

[0041] In the display panel provided by the embodiment of the present application, the display panel includes a substrate, a light - emitting unit, and a photo - electric sensing unit. The display panel includes a photo - electric conversion layer of the light - emitting unit and the photo - electric sensing unit, so that not only can the light - emitting display of the display panel be realized, but also the photo - electric detection function of the display panel can be realized. A blend layer is provided between the second carrier layer and the photo - electric conversion layer, and the material of the blend layer includes both at least part of the material of the second carrier layer and at least part of the material of the photo - electric conversion layer, which can reduce the potential barrier between the second carrier layer and the photo - electric conversion layer and improve the performance of the photo - electric conversion layer. Therefore, by adding a blend layer between the photo - electric conversion layer and the carrier layer in the embodiment of the present application, the performance of the photo - electric detector of the display panel can be improved. Description of the Drawings

[0042] By reading the following detailed description of non - restrictive embodiments with reference to the accompanying drawings, other features, objects, and advantages of the present application will become more apparent, wherein the same or similar reference numerals represent the same or similar features.

[0043] Figure 1 is a schematic structural diagram of a display panel provided by a related embodiment;

[0044] Figure 2 is a schematic layer - structure diagram of a display panel provided by a related embodiment.

[0045] Figure 3 It is a schematic energy level structure diagram of a display panel provided by a related embodiment;

[0046] Figure 4 It is a schematic layer structure diagram of a display panel provided by an embodiment of the present application;

[0047] Figure 5 It is a schematic energy level structure diagram of a display panel provided by an embodiment of the present application;

[0048] Figure 6 It is a schematic layer structure diagram of a display panel provided by another embodiment of the present application;

[0049] Figure 7 It is a schematic energy level structure diagram of a display panel provided by another embodiment of the present application;

[0050] Figure 8 It is a schematic layer structure diagram of a display panel provided by still another embodiment of the present application;

[0051] Figure 9 It is a schematic energy level structure diagram of a display panel provided by still another embodiment of the present application;

[0052] Figure 10 It is a schematic layer structure diagram of a display panel provided by yet another embodiment of the present application;

[0053] Figure 11 It is a schematic layer structure diagram of a display panel provided by yet another embodiment of the present application;

[0054] Figure 12 It is a test curve graph of a display panel provided by an embodiment of the present application;

[0055] Figure 13 It is a schematic flowchart of a method for manufacturing a display panel provided by an embodiment of the present application;

[0056] Figure 14 It is a schematic flowchart of a method for manufacturing a display panel provided by another embodiment of the present application. Detailed implementation manners

[0057] Aspects and exemplary embodiments of the present application will be described in detail below. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, it will be apparent to those skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is merely provided to better understand the present application by way of illustrating examples of the present application. In the drawings and the following description, at least some of the well-known structures and technologies are not shown in order to avoid unnecessarily obscuring the present application; and, for clarity, the dimensions of some structures may be exaggerated. In addition, the features, structures, or characteristics described below may be combined in any suitable manner in one or more embodiments.

[0058] In the description of the present application, it should be noted that unless otherwise specified, the meaning of "a plurality of" is two or more; the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "inner", "outer", etc. is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present application. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.

[0059] The orientation terms appearing in the following description are all the directions shown in the drawings and do not specifically limit the structure of the embodiments of the present application. In the description of the present application, it should also be noted that unless otherwise clearly specified and limited, the terms "mounted" and "connected" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be directly connected or indirectly connected. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0060] Biometric recognition plays an important role in mobile terminals such as smartphones and tablets. In the prior art, the common methods include face recognition and fingerprint recognition. Among them, fingerprint recognition includes ultrasonic fingerprint, capacitive fingerprint, and optical fingerprint, etc. Optical fingerprint has become the mainstream technical means due to its advantages such as high resolution, high sensitivity, and the ability to perform life and health detection.

[0061] Figure 1 For a display panel provided by a related technology Figure 1The transmission path of light is indicated by an arrow. It should be noted that integrating an organic light-emitting diode and a photoelectric sensor together in a panel can achieve a larger integration area and a thinner overall thickness of the device. An organic photodetector (OPD) based on an organic photosensitive material is compatible with the vacuum evaporation process of an organic light-emitting diode (OLED), which is an important direction for integrating fingerprint recognition functions in panels in the future.

[0062] As Figure 2 shown, an OPD generally includes a cathode, an anode, a photoinductive structure (Active layer, or also known as the photosensitive layer), and a carrier layer. It is an optoelectronic device that converts an incident light signal into an electrical signal, while an organic light-emitting diode is a device that converts an electrical signal into a light signal.

[0063] The photoinductive structure in an OPD generally includes two organic materials with staggered energy levels. One of the materials is a donor material, and typical donor materials include copper phthalocyanine oligomers (chemical symbol: CuPc), butyl phthalate (abbreviation: DBP), etc. The other material is an acceptor material, and typical acceptor materials include fullerenes (such as C60 and C70, where C60 is a molecule composed of 60 carbon atoms, C60 is also called buckminsterfullerene, and C70 is a molecule composed of 70 carbon atoms). The working principle of an OPD can include the following steps: light absorption by the material to generate excitons, diffusion of excitons to the donor-acceptor interface, diffusion of excitons to the donor-acceptor interface and charge separation, and charge transport and collection. To improve the exciton dissociation efficiency, the donor and acceptor are usually mixed (co-evaporated) together as the photoinductive structure.

[0064] To improve the carrier collection efficiency, a reverse bias voltage, such as -3V, is usually applied to the cathode and anode of the OPD. However, this reverse voltage will also increase the injection of dark current.

[0065] The OPD is usually configured to implement optoelectronic sensing functions. For example, the OPD can be used for image recognition. Further, when the OPD is configured to implement fingerprint recognition, a high recognition accuracy is required for the OPD. Therefore, the OPD is required to have a high signal-to-noise ratio (SNR). It should be noted that in the OPD, the magnitude of the signal-to-noise ratio is related to the external quantum efficiency (EQE). Specifically, the EQE represents the ratio of the number of photo-generated electrons flowing through the device under illumination to the number of photons incident on the device, that is, the ability to convert light into electricity. The EQE is the most basic parameter of the OPD. Therefore, maximizing the EQE is the direction for optimizing the OPD device and improving the product performance.

[0066] In the integrated application of the OPD and the OLED, as Figure 3 shown, considering cost and process difficulty, the OPD needs to share some carrier layers with the OLED. Although this integration method is economical, it also reduces the device performance of the OPD. And it makes both the OPD and the OLED include a thick hole transport layer (HTL). This thick hole transport layer can effectively block the injection of anode electrons under reverse bias and reduce the dark current. However, due to the thick hole transport layer having a large resistance, further, there is a mismatch between the HOMO (Highest Occupied Molecular Orbital) energy level of the hole transport layer and the HOMO energy level of the donor in the optoelectronic sensing structure (that is, there is a certain potential barrier). Therefore, the extraction of photo-generated holes will be hindered. Therefore, for an OPD device with a thick hole transport layer, its EQE will be very low.

[0067] In addition, when a hole blocking layer and an electron transport layer of the OLED are provided on the active layer of the OPD, since the LUMO (Lowest Unoccupied Molecular Orbital) energy level of the hole blocking layer of the OLED is about -3.0 electron volts, while the LUMO energy level of the commonly used acceptor material of the OPD is about -4.0 electron volts, there is a potential barrier of about 1 electron volt between the two. This potential barrier will significantly affect the extraction of photo-generated electrons and will also significantly reduce the device EQE.

[0068] To solve the above technical problems, in the integrated application of the OPD and the OLED in the embodiments of the present application, an interface modification film layer is introduced into the OPD device structure to solve the problem that the extraction of photo-generated holes is hindered. At the same time, it aims to reduce or eliminate the above potential barrier, solve the problem that the extraction of photo-generated electrons is hindered, and improve the EQE of the OPD device.

[0069] To better understand the present application, the following will describe in detail the display panel and the display device according to the embodiments of the present application in conjunction with Figures 4 to 12 the display panel and the display device according to the embodiments of the present application.

[0070] Figure 4 FIG. is a schematic diagram of the layer structure of a display panel provided by an embodiment of the present application, Figure 5 FIG. is a schematic diagram of the energy level structure of a display panel device provided by an embodiment of the present application.

[0071] As Figure 4 and Figure 5 shown, an embodiment of the first aspect of the present application provides a display panel, the display panel includes a substrate 100, a light-emitting unit and a photoelectric conversion unit. The light-emitting unit is disposed on the first side, and the light-emitting unit includes a first carrier layer. The photoelectric sensing unit is disposed on the first side of the substrate 100, and the photoelectric sensing unit is configured to receive a light signal and generate a corresponding electrical signal according to the light signal. The photoelectric sensing unit includes a photoelectric conversion layer 320, a second carrier layer and a blend layer 400 which are stacked. The blend layer is disposed between the photoelectric conversion layer and the second carrier layer. Wherein, at least part of the materials of the first carrier layer and the second carrier layer are the same, and the material of the blend layer includes at least part of the material of the second carrier layer and at least part of the material of the photoelectric conversion layer 320 photoelectric conversion layer 320 blend layer 400 photoelectric conversion layer 320.

[0072] Optionally, the light-emitting unit includes a light-emitting structure 310. Optionally, the light-emitting structure 310 and the photoelectric conversion layer 320 are disposed on the same layer. Optionally, the light-emitting structure 310 and the photoelectric conversion layer 320 are integrally formed to form a functional layer 300.

[0073] Optionally, the first carrier layer and the second carrier layer are disposed on the same layer to form a carrier layer 200.

[0074] In the display panel provided by the embodiment of the present application, the display panel includes a substrate 100, a light-emitting unit and a photoelectric sensing unit. The display panel includes a light-emitting unit and a photoelectric sensing unit photoelectric conversion layer 320, so that not only can the light-emitting display of the display panel be realized, but also the photoelectric detection function of the display panel can be realized. A blend layer 400 is disposed between the second carrier layer and the photoelectric conversion layer 320, and the material of the blend layer 400 includes both at least part of the material of the second carrier layer and at least part of the material of the photoelectric conversion layer 320, which can reduce the barrier between the second carrier layer and the photoelectric conversion layer 320 and improve the performance of the photoelectric conversion layer 320. Therefore, by adding a blend layer 400 between the photoelectric conversion layer 320 and the carrier layer 200 in the embodiment of the present application, the performance of the photodetector of the display panel can be improved.

[0075] Optionally, the light emitting unit is a structure for converting an electrical signal into an optical signal to realize a light emitting display of the display panel. Optionally, the photoelectric sensing unit is a structure for converting an optical signal line into an electrical signal to realize a photoelectric detection function of the display panel. Optionally, the photoelectric sensing unit can be the above-mentioned OPD device.

[0076] Optionally, the display panel further includes a first electrode 110 and a second electrode 120, which are respectively disposed on both sides of the light-emitting unit and the photoelectric sensing unit, and the light-emitting unit can be driven to emit light through the first electrode 110 and the second electrode 120, and a signal of the photoelectric sensing unit can also be transmitted through the first electrode 110 and the second electrode 120. Optionally, the substrate 100 further includes a driving circuit, which is used to drive the light-emitting unit to emit light.

[0077] Optionally, one of the first electrode 110 and the second electrode 120 is an anode, and the other is a cathode. The embodiment of the present application is illustrated by taking the first electrode 110 as an anode and the second electrode 120 as a cathode. The material of the first electrode 110 may include indium tin oxide, and the material of the second electrode 120 may include magnesium (chemical symbol: Mg), silver (chemical symbol: Ag), ytterbium (chemical symbol: Yb), etc.

[0078] There are many ways to set the carrier layer 200. Optionally, the carrier layer 200 may include an electron transport layer 240 and a hole transport layer 210. The electron transport layer 240 and the hole transport layer 210 are arranged on both sides of the functional layer 300. The electron transport layer 240 is used to transport electrons, and the hole transport layer 210 is used to transport holes. Optionally, the carrier layer 200 may also include a hole injection layer 230. The hole injection layer 230 is located on the side of the hole transport layer 210 away from the photoelectric conversion layer 320.

[0079] Optionally, the carrier layer 200 further includes a hole blocking layer 220 located between the electron transport layer 240 and the functional layer 300 . The hole blocking layer 220 is used to block the holes in the functional layer 300 from being transmitted toward the electron transport layer 240 , thereby improving the luminous efficiency of the light-emitting structure 310 .

[0080] Optionally, the first carrier layer may include at least one of a first electron transport layer 241, a first hole transport layer 211, a first hole injection layer 231, and a first hole blocking layer 221. Optionally, the second carrier layer may include at least one of a second electron transport layer 242, a second hole transport layer 212, a second hole injection layer 232, and a second hole blocking layer 222.

[0081] Optionally, the first electron transport layer 241 and the second electron transport layer 242 may be arranged in the same layer, for example, the first electron transport layer 241 and the second electron transport layer 242 may be arranged as a whole to form an electron transport layer 240. Optionally, the first hole transport layer 211 and the second hole transport layer 212 may be arranged in the same layer, for example, the first hole transport layer 211 and the second hole transport layer 212 may be arranged as a whole to form a hole transport layer 210. Optionally, the first hole injection layer 231 and the second hole injection layer 232 may be arranged in the same layer, for example, the first hole injection layer 231 and the second hole injection layer 232 may be arranged as a whole to form a hole injection layer 230. Optionally, the first hole blocking layer 221 and the second hole blocking layer 222 may be arranged in the same layer, for example, the first hole blocking layer 221 and the second hole blocking layer 222 may be arranged as a whole to form a hole blocking layer 220.

[0082] There are many ways to set the position of the blending layer 400. For example, please refer to Figures 4 to 7 , the blended layer 400 may be disposed on the side of the photoelectric conversion layer 320 facing the second hole transport layer 212 to reduce the potential barrier between the second hole transport layer 212 and the photoelectric conversion layer 320. And / or, the blended layer 400 may also be disposed on the side of the photoelectric conversion layer 320 facing the second hole blocking layer 222 to reduce the potential barrier between the photoelectric conversion layer 320 and the second hole blocking layer 222.

[0083] Optionally, the material of the blended layer 400 includes the material of the photoelectric conversion layer 320 and the material of the second carrier layer adjacent to the blended layer 400. For example, when the blended layer 400 is disposed on the side of the photoelectric conversion layer 320 facing the second hole transport layer 212, the material of the blended layer 400 includes the material of the photoelectric conversion layer 320 and the material of the second hole transport layer 212. When the blended layer 400 is disposed on the side of the photoelectric conversion layer 320 facing the second hole blocking layer 222, the material of the blended layer 400 includes the material of the photoelectric conversion layer 320 and the material of the second hole blocking layer 222. In some optional embodiments, such as Figure 4 and Figure 5 As shown, the material of the photoelectric conversion layer 320 includes a donor material and an acceptor material, the second carrier layer includes the second hole transport layer 212, and the material of the blended layer 400 may include the material of the second hole transport layer 212 and a donor material. And / or, the second carrier layer includes the second hole blocking layer 212, the second hole blocking layer is located on the side of the photoelectric conversion layer 320 away from the substrate 100, and the material of the blended layer 400 includes the material of the second hole blocking layer 222 and an acceptor material.

[0084] Optionally, the blend layer 400 includes a first hybrid sub-layer 410. The first hybrid sub-layer 410 is located between the second hole transport layer 212 and the optoelectronic conversion layer 320. The material of the first hybrid sub-layer 410 includes the material of the hole transport layer 210 and the donor material.

[0085] In these alternative embodiments, the first hybrid sub-layer 410 is located between the optoelectronic conversion layer 320 and the second hole transport layer 212. Therefore, the material of the first hybrid sub-layer 410 includes the material of the second hole transport layer 212 and the donor material in the optoelectronic conversion layer 320, which can improve the problem of a relatively large barrier between the optoelectronic conversion layer 320 and the second hole transport layer 212.

[0086] The first hybrid sub-layer 410 may have a single-layer structure. Alternatively, the first hybrid sub-layer 410 may include two or more stacked first sub-layers.

[0087] Optionally, when the first hybrid sub-layer 410 includes two or more stacked first sub-layers, in the direction from the second hole transport layer 212 towards the optoelectronic conversion layer 320, the concentration of the donor material in the first sub-layer increases, so that the barrier between the two or more first sub-layers and the optoelectronic conversion layer 320 gradually decreases, better improving the problem of a relatively large barrier between the optoelectronic conversion layer 320 and the second hole transport layer 212.

[0088] Optionally, in the direction from the second hole transport layer 212 towards the optoelectronic conversion layer 320, the concentration of the donor material in the first sub-layer can increase gradually in equal proportion, that is, the concentration difference of the donor material between any two adjacent first sub-layers is the same, to better improve the problem of a relatively large barrier between the optoelectronic conversion layer 320 and the second hole transport layer 212.

[0089] Alternatively, in other embodiments, in the direction from the second hole transport layer 212 towards the optoelectronic conversion layer 320, the concentration of the donor material in the first sub-layer increases in other ways rather than in equal proportion.

[0090] In some alternative embodiments, as Figure 6 and Figure 7 shown, the blend layer 400 includes a second hybrid sub-layer 420. The second hybrid sub-layer 420 is located between the second hole blocking layer 222 and the optoelectronic conversion layer 320. The material of the second hybrid sub-layer 420 includes the material of the second hole blocking layer 222 and the acceptor material.

[0091] In these alternative embodiments, the second hybrid sub-layer 420 is located between the second hole blocking layer 222 and the photo-electric conversion layer 320. The material of the second hybrid sub-layer 420 includes the material of the second hole blocking layer 222 and the acceptor material of the photo-electric conversion layer 320, which can improve the problem of a relatively large potential barrier between the photo-electric conversion layer 320 and the hole blocking layer 220.

[0092] The second hybrid sub-layer 420 can be a single-layer structure, or the second hybrid sub-layer 420 includes two or more second sub-layers stacked on top of each other.

[0093] When the second hybrid sub-layer 420 includes two or more second sub-layers stacked on top of each other, along the direction of the second hole blocking layer 222 approaching the photo-electric conversion layer 320, the concentration of the acceptor material in the second sub-layer increases, so that the potential barrier between the two or more second sub-layers and the photo-electric conversion layer 320 gradually decreases, better improving the problem of a relatively large potential barrier between the photo-electric conversion layer 320 and the hole blocking layer 220.

[0094] Optionally, along the direction of the second hole blocking layer 222 approaching the photo-electric conversion layer 320, the concentration of the acceptor material in the second sub-layer can increase gradually in equal proportion, that is, the concentration difference of the acceptor material between any two adjacent second sub-layers is the same, so as to better improve the problem of a relatively large potential barrier between the photo-electric conversion layer 320 and the hole blocking layer 220.

[0095] Or, in other embodiments, along the direction of the second hole blocking layer 222 approaching the photo-electric conversion layer 320, the concentration of the acceptor material in the second sub-layer increases in other ways rather than in equal proportion.

[0096] Optionally, as Figure 8 and Figure 9 shown, the blend layer 400 can simultaneously include the above-mentioned first hybrid sub-layer 410 and second hybrid sub-layer 420.

[0097] In some alternative embodiments, in the blend layer 400, the mixing molar ratio of the carrier layer 200 material and the photo-electric conversion layer 320 material is 10% to 90%.

[0098] For example, when the blend layer 400 includes a first mixed sub-layer 410, and the material of the first mixed sub-layer 410 includes the material of the second hole transport layer 212 and the donor material of the photoelectric conversion layer 320, the donor material in the first mixed sub-layer 410 has a first amount of substance, and the material of the second hole transport layer 212 in the first mixed sub-layer 410 has a second amount of substance. The ratio of the first amount of substance to the second amount of substance is not less than 10% and not greater than 90%. This can not only improve the situation where the color potential barrier between the first mixed sub-layer 410 and the second hole transport layer 212 is too large due to too little material of the second hole transport layer 212 in the first mixed sub-layer 410, but also improve the situation where the potential barrier between the first mixed sub-layer 410 and the photoelectric conversion layer 320 is too large due to too much donor material in the first mixed sub-layer 410.

[0099] Optionally, when the blend layer 400 includes a second mixed sub-layer 420, and the material of the second mixed sub-layer 420 includes the material of the second hole blocking layer 222 and the acceptor material of the photoelectric conversion layer 320, the acceptor material in the second mixed sub-layer 420 has a third amount of substance, and the material of the second hole blocking layer 222 in the second mixed sub-layer 420 has a fourth amount of substance. The ratio of the third amount of substance to the fourth amount of substance is not less than 10% and not greater than 90%. This can not only improve the situation where the color potential barrier between the first mixed sub-layer 410 and the second hole blocking layer 222 is too large due to too little material of the second hole blocking layer 222 in the second mixed sub-layer 420, but also improve the situation where the potential barrier between the first mixed sub-layer 410 and the photoelectric conversion layer 320 is too large due to too much material of the second hole blocking layer 222 in the second mixed sub-layer 420.

[0100] According to the transport principle of organic semiconductor materials, electrons and hole carriers perform hopping transport inside the materials. From the perspective of energy levels, the LUMO and HOMO energy level distributions of organic semiconductor materials have a certain broadening. While carriers perform disordered hopping transport inside the materials, they also hop between different energy levels. Blending two materials can effectively expand the density of states distribution, providing more transport channels compared to the flat-layer structure interface and effectively reducing the interface potential barrier.

[0101] For example, when the blend layer 400 includes a first mixed sub-layer 410, the thickness of the first mixed sub-layer 410 is not less than 1 nanometer and not greater than 20 nanometers. This can not only improve the situation where the potential barrier between the hole transport layer 210 and the photoelectric conversion layer 320 cannot be well improved due to too small a thickness of the first mixed sub-layer 410, but also improve the situation where the performance of the photoelectric induction device of the display panel is affected because the transport path of holes is too long due to too large a thickness of the first mixed sub-layer 410.

[0102] When the blend layer 400 includes the second mixing sub-layer 420, the thickness of the second mixing sub-layer 420 is not less than 1 nanometer and not greater than 20 nanometers. This can not only improve the problem that the potential barrier between the hole blocking layer 220 and the optoelectronic conversion layer 320 is too large due to the too small thickness of the second mixing sub-layer 420, but also improve the problem that the too large thickness of the second mixing sub-layer 420 makes the electron transmission path too long and affects the performance of the optoelectronic sensing device of the display panel.

[0103] In some alternative embodiments, the orthographic projection of the optoelectronic conversion layer 320 on the substrate 100 is located within the orthographic projection of the blend layer 400 on the substrate 100. By arranging the blend layer 400 between the optoelectronic conversion layer 320 and the carrier layer 200, the problem of too large potential barrier between the optoelectronic conversion layer 320 and the carrier layer 200 can be better improved.

[0104] For example, when the blend layer 400 includes the first mixing sub-layer 410, the orthographic projection of the optoelectronic conversion layer 320 on the substrate 100 is located within the orthographic projection of the first mixing sub-layer 410 on the substrate 100. When the blend layer 400 includes the second mixing sub-layer 420, the orthographic projection of the optoelectronic conversion layer 320 on the substrate 100 is located within the orthographic projection of the second mixing sub-layer 420 on the substrate 100.

[0105] There are various ways to arrange the blend layer 400. There can be multiple blend layers 400, and the multiple blend layers 400 are spaced apart on one side of the carrier layer 200, and the blend layer 400 and the optoelectronic conversion layer 320 are arranged in one-to-one correspondence, so that the orthographic projection of each optoelectronic conversion layer 320 on the substrate 100 is located within the orthographic projection of each blend layer 400 on the substrate 100.

[0106] Or, as Figure 10 and Figure 11 shown, the blend layer 400 is a common layer, and the orthographic projections of the light-emitting structure 310 and the optoelectronic conversion layer 320 on the substrate 100 are located within the orthographic projection of the blend layer 400 on the substrate 100, so that the orthographic projections of multiple optoelectronic conversion layers 320 on the substrate 100 are located within the orthographic projection of the same blend layer 400 on the substrate 100.

[0107] For example, the number of the first mixing sub-layers 410 can be multiple, and the orthographic projection of each optoelectronic conversion layer 320 on the substrate 100 is located within the orthographic projection of each first mixing sub-layer 410 on the substrate 100. Or, the first mixing sub-layer 410 is a common layer, and the orthographic projections of the light-emitting structure 310 and the optoelectronic conversion layer 320 on the substrate 100 are located within the orthographic projection of the first mixing sub-layer 410 on the substrate 100.

[0108] For example, the number of the second hybrid sub-layers 420 may be multiple, and the orthographic projection of each photoelectric conversion layer 320 on the substrate 100 is located within the orthographic projection of each second hybrid sub-layer 420 on the substrate 100. Alternatively, the second hybrid sub-layer 420 is a common layer, and the orthographic projections of the light-emitting structure 310 and the photoelectric conversion layer 320 on the substrate 100 are located within the orthographic projection of the second hybrid sub-layer 420 on the substrate 100.

[0109] In some alternative embodiments, the photoelectric conversion layer 320 includes a donor material and an acceptor material, and the donor material and the acceptor material interact to achieve a photoelectric induction function.

[0110] Optionally, the photoelectric conversion layer 320 includes a hybrid layer 321, and the material of the hybrid layer 321 includes a donor material and an acceptor material to reduce the potential barrier between the photoelectric conversion layer 320 and other layer structures.

[0111] Optionally, the photoelectric conversion layer 320 further includes a donor layer 322, the donor layer 322 is located on the side of the hybrid layer 321 facing the substrate 100, and the material of the donor layer 322 includes a donor material; and / or, the photoelectric conversion layer 320 further includes an acceptor layer 323, the acceptor layer 323 is located on the side of the hybrid layer 321 facing away from the substrate 100, and the material of the acceptor layer 323 includes an acceptor material.

[0112] To further illustrate the beneficial effects of the present application, the inventor conducted a comparative experiment. The comparative implementation includes: Comparative Example 1, Example 1, and Example 2. Comparative Example 1, Example 1, and Example 2 all provide a display panel including a light-emitting structure 310 and a photoelectric conversion layer 320.

[0113] The difference between Example 1 and Comparative Example 1 is that a first hybrid sub-layer 410 is introduced between the photoelectric conversion layer 320 and the second hole transport layer 212. The first hybrid sub-layer 410 includes three first sub-layers. In the direction of the second hole transport layer 212 approaching the photoelectric conversion layer 320, the ratios of the material of the hole transport layer 210 and the donor material in the three first sub-layers are 7:3, 5:5, and 3:7 respectively, and the thicknesses of the three first sub-layers are all 3.3 nanometers.

[0114] The difference between Example 2 and Comparative Example 1 is that a second hybrid sub-layer 420 is introduced between the photoelectric conversion layer 320 and the second hole blocking layer 222. The second hybrid sub-layer 420 includes three second sub-layers. In the direction of the second hole blocking layer 222 approaching the photoelectric conversion layer 320, the ratios of the material of the hole blocking layer 220 and the acceptor material in the three second sub-layers are 7:3, 5:5, and 3:7 respectively, and the thicknesses of the three second sub-layers are all 3.3 nanometers.

[0115] By testing Comparative Example 1, Example 1, and Example 2 under the condition of displaying light with a wavelength of 590 nanometers, the following results are obtainedFigure 12 The shown curve graph, by Figure 12 It can be clearly seen that when the first hybrid sublayer 410 or the second hybrid sublayer 420 is not provided, the EQE of Comparative Example 1 is very low, only 0.4% when the driving voltage is -3V. After introducing the first hybrid sublayer 410 or the second hybrid sublayer 420, the EQE of the display panel is significantly improved to 6.8% and 4.0%.

[0116] An embodiment of the second aspect of the present application further provides a display device, including the display panel of any one of the above first aspect embodiments. Since the display device provided by the embodiment of the second aspect of the present application includes the display panel of any one of the above first aspect embodiments, the display device provided by the embodiment of the second aspect of the present application has the beneficial effects of the display panel of any one of the above first aspect embodiments, which will not be elaborated here.

[0117] The display device in the embodiments of the present application includes, but is not limited to, devices with display functions such as mobile phones, personal digital assistants (Personal Digital Assistant, abbreviated as: PDA), tablet computers, e-books, televisions, access control systems, smart landline telephones, consoles, etc.

[0118] An embodiment of the third aspect of the present application further provides a method for manufacturing a display panel. The display panel can be the display panel provided by any one of the above first aspect embodiments. Please refer to Figures 1 to 12 together, the method for manufacturing a display panel may include:

[0119] Step S01: Provide a substrate 100, and the substrate 100 has a first side.

[0120] Step S02: Prepare a first carrier layer of a light-emitting unit and a second carrier layer of a photoelectric sensing unit on the first side. Among them, the photoelectric sensing unit is configured to receive an optical signal and generate a corresponding electrical signal according to the optical signal, and at least part of the materials of the first carrier layer and the second carrier layer are the same.

[0121] Step S03: On the side of the second carrier layer facing away from the substrate 100, co-evaporate a donor material and at least part of the material of the second carrier layer to form a blend layer 400.

[0122] Step S04: Prepare a photoelectric conversion layer 320 on the side of the blend layer 400 facing away from the second carrier layer. The material of the photoelectric conversion layer 320 includes a donor material.

[0123] In the display panel formed by the method provided in the embodiments of the present application, the display panel includes a substrate 100, a light-emitting unit, and a photoelectric sensing unit. The display panel includes a photoelectric conversion layer 320 in the light-emitting unit and the photoelectric sensing unit, so that not only the light-emitting display of the display panel can be realized, but also the photoelectric detection function of the display panel can be realized. A blending layer 400 is provided between the second carrier layer and the photoelectric conversion layer 320, and the material of the blending layer 400 includes at least part of the material of the second carrier layer and at least part of the material of the photoelectric conversion layer 320, which can reduce the barrier between the second carrier layer and the photoelectric conversion layer 320 and improve the performance of the photoelectric conversion layer 320. Therefore, by adding the blending layer 400 between the photoelectric conversion layer 320 and the carrier layer 200 in the embodiments of the present application, the performance of the photodetector of the display panel can be improved.

[0124] Optionally, as described above, the first carrier layer includes a first hole transport layer 211, the second carrier layer includes a second hole transport layer 212, and in step S02: the first hole transport layer 211 and the second hole transport layer 212 are prepared using the same mask. To simplify the manufacturing process of the display panel.

[0125] Another embodiment of the third aspect of the present application further provides a method for manufacturing a display panel. The display panel may be the display panel provided in any of the above first aspect embodiments. Please refer to Figures 1 to 12 and Figure 14 , the method for manufacturing a display panel may include:

[0126] Step S01': Provide a substrate 100, and the substrate 100 has a first side.

[0127] Step S02': Prepare a photoelectric conversion layer 320 of the photoelectric sensing unit on the first side. The material of the photoelectric conversion layer 320 includes a receptor material. Wherein, the photoelectric sensing unit is configured to receive an optical signal and generate a corresponding electrical signal according to the optical signal.

[0128] Step S03': On the side of the photoelectric conversion layer 320 facing away from the substrate 100, a blending layer 400 is formed by co-evaporating a carrier material and a receptor material.

[0129] Step S04': Prepare a first carrier layer of the light-emitting unit on the first side and a second carrier layer on the side of the blending layer 400 facing away from the photoelectric conversion layer 320. Wherein, at least part of the materials of the first carrier layer and the second carrier layer are the same, and the second carrier layer includes a carrier material.

[0130] In the display panel formed by the method provided in the embodiments of the present application, the display panel includes a substrate 100, a light-emitting unit, and a photoelectric sensing unit. The display panel includes a light-emitting unit and a photoelectric conversion layer 320 of the photoelectric sensing unit, so that not only the light-emitting display of the display panel can be realized, but also the photoelectric detection function of the display panel can be realized. A blend layer 400 is provided between the second carrier layer and the photoelectric conversion layer 320, and the material of the blend layer 400 includes both at least part of the material of the second carrier layer and at least part of the material of the photoelectric conversion layer 320, which can reduce the barrier between the second carrier layer and the photoelectric conversion layer 320 and improve the performance of the photoelectric conversion layer 320. Therefore, by adding the blend layer 400 between the photoelectric conversion layer 320 and the carrier layer 200 in the embodiments of the present application, the performance of the photodetector of the display panel can be improved.

[0131] Optionally, as described above, the first carrier layer includes a first hole blocking layer 221, the second carrier layer includes a second hole blocking layer 222, and in step S04': the first hole blocking layer 221 and the second hole blocking layer 222 are prepared using the same mask. To simplify the manufacturing process of the display panel.

[0132] Although the present application has been described with reference to the preferred embodiments, various improvements can be made to it and components therein can be replaced with equivalents without departing from the scope of the present application. In particular, as long as there is no structural conflict, the technical features mentioned in each embodiment can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A display panel, characterized in that, Comprising: A substrate having a first side; A light-emitting unit disposed on the first side, the light-emitting unit including a first carrier layer; And A photoelectric sensing unit disposed on the first side, the photoelectric sensing unit being configured to receive an optical signal and generate a corresponding electrical signal according to the optical signal, the photoelectric sensing unit including a stacked photoelectric conversion layer, a second carrier layer, and a blend layer, the blend layer being disposed between the photoelectric conversion layer and the second carrier layer; Wherein at least part of the materials of the first carrier layer and the second carrier layer are the same, and the material of the blend layer includes at least part of the material of the second carrier layer and at least part of the material of the photoelectric conversion layer.

2. The display panel according to claim 1, wherein The material of the photoelectric conversion layer includes a donor material and an acceptor material, and the second carrier layer includes: A second hole transport layer located on the side of the photoelectric conversion layer facing the substrate, and the material of the blend layer includes the material of the second hole transport layer and the donor material; and / or, A second hole blocking layer located on the side of the photoelectric conversion layer facing away from the substrate, and the material of the blend layer includes the material of the second hole blocking layer and the acceptor material; Preferably, the light-emitting unit further includes a light-emitting structure, and the first carrier layer includes: A first hole transport layer located on the side of the light-emitting layer facing the substrate, and the material of the first hole transport layer is the same as that of the second hole transport layer; and / or, A first hole blocking layer located on the side of the light-emitting layer facing away from the substrate, and the material of the first hole blocking layer is the same as that of the second hole blocking layer; Preferably, the first hole transport layer and the second hole transport layer are of an integral structure, and / or the first hole blocking layer and the second hole blocking layer are of an integral structure.

3. The display panel according to claim 2, wherein The blend layer includes a first mixed sub-layer, the first mixed sub-layer being located between the second hole transport layer and the photoelectric conversion layer, and the material of the first mixed sub-layer includes the material of the second hole transport layer and the donor material; Preferably, the first mixed sub-layer includes two or more first sub-layers, and in the direction of the second hole transport layer approaching the photoelectric conversion layer, the concentration of the donor material in the first sub-layer gradually increases; Preferably, the donor material in the first mixed sub-layer has a first amount of substance, the material of the second hole transport layer in the first mixed sub-layer has a second amount of substance, and the ratio of the first amount of substance to the second amount of substance is not less than 10% and not greater than 90%; Preferably, the thickness of the first mixed sub-layer is not less than 1 nanometer and not greater than 20 nanometers.

4. The display panel according to claim 2, wherein The blend layer includes a second mixed sub-layer, the second mixed sub-layer being located between the second hole blocking layer and the photoelectric conversion layer, and the material of the second mixed sub-layer includes the material of the second hole blocking layer and the acceptor material; Preferably, the second hybrid sublayer includes two or more second sublayers, and in the direction from the second hole blocking layer towards the photo - electric conversion layer, the concentration of the acceptor material in the second sublayer gradually increases; Preferably, the acceptor material in the second hybrid sublayer has a third amount of substance, and the material of the second hole blocking layer in the second hybrid sublayer has a fourth amount of substance, and the ratio of the third amount of substance to the fourth amount of substance is not less than 10% and not more than 90%; Preferably, the thickness of the second hybrid sublayer is not less than 1 nm and not more than 20 nm.

5. The display panel according to claim 1, characterized in that, The orthographic projection of the photo - electric conversion layer on the substrate is located within the orthographic projection of the blend layer on the substrate; Preferably, a plurality of the blend layers are spaced apart on one side of the carrier layer, and the blend layers and the photo - electric conversion layers are arranged in one - to - one correspondence; Alternatively, the light - emitting unit includes a light - emitting structure, and the orthographic projections of the light - emitting structure and the photo - electric conversion layer on the substrate are located within the orthographic projection of the blend layer on the substrate.

6. A display device, characterized in that, A display panel comprising any one of claims 1 - 5.

7. A method for preparing a display panel, characterized in that, Comprising: Providing a substrate having a first side; Preparing a first carrier layer of a light - emitting unit and a second carrier layer of a photo - electric sensing unit on the first side, wherein the photo - electric sensing unit is configured to receive an optical signal and generate a corresponding electrical signal according to the optical signal, and at least part of the materials of the first carrier layer and the second carrier layer are the same; On the side of the second carrier layer facing away from the substrate, co - evaporating a donor material and at least part of the material of the second carrier layer to form a blend layer; Preparing a photo - electric conversion layer on the side of the blend layer facing away from the second carrier layer, and the material of the photo - electric conversion layer includes the donor material.

8. The preparation method according to claim 7, wherein The first carrier layer includes a first hole - transporting layer, and the second carrier layer includes a second hole - transporting layer. The step of preparing the first carrier layer of the light - emitting unit and the second carrier layer of the photo - electric sensing unit on the first side includes: Using the same mask to prepare the first hole - transporting layer and the second hole - transporting layer.

9. A method for manufacturing a display panel, characterized in that, Comprising: Providing a substrate having a first side; Preparing a photo - electric conversion layer of a photo - electric sensing unit on the first side, and the material of the photo - electric conversion layer includes an acceptor material, wherein the photo - electric sensing unit is configured to receive an optical signal and generate a corresponding electrical signal according to the optical signal; On the side of the photo - electric conversion layer facing away from the substrate, co - evaporating a carrier material and the acceptor material to form a blend layer; Preparing a first carrier layer of a light - emitting unit on the first side and preparing a second carrier layer on the side of the blend layer facing away from the photo - electric conversion layer, wherein at least part of the materials of the first carrier layer and the second carrier layer are the same, and the second carrier layer includes the carrier material.

10. The preparation method according to claim 9, wherein, The first carrier layer includes a first hole blocking layer, the second carrier layer includes a second hole blocking layer, and the step of preparing the first carrier layer of the light-emitting unit on the first side and preparing the second carrier layer on the side of the mixed layer away from the photoelectric conversion layer includes: The first hole blocking layer and the second hole blocking layer are prepared using the same mask.

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