Display device

By adopting the combination of the first and second light emitting elements in the display device, and using the design of the light transmitting layer and the wavelength conversion layer, the problems of white angle difference and uneven light efficiency are solved, and a more uniform display effect is achieved.

CN120379474APending Publication Date: 2025-07-25SAMSUNG DISPLAY CO LTD
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Patent Information

Application Number
CN202510084245.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2024-01-23
Filing Date
2025-01-20
Publication Date
2025-07-25

AI Technical Summary

Technical Problem

The existing self-luminous display devices have a large white angle difference (WAD) at different viewing angles, and the light efficiency is uneven, which affects the display effect.

Method used

The display device design is adopted that includes the first and second light emitting elements, and the first and second component light is emitted, respectively, and by combining the light transmitting layer and the wavelength conversion layer, the light emission and conversion of light is optimized by using the light scatterer and the stacked body structure of different thicknesses to reduce the white angle difference and improve the light efficiency.

Benefits of technology

The reduction of the difference in white angles and the improvement of light efficiency at different viewing angles is achieved, providing a more uniform display effect.

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Abstract

The display device includes: a first substrate including a first emission area and a second emission area spaced apart from each other; a first light emitting element on the first substrate and overlapping the first emission region and a second light emitting element on the first substrate and overlapping the second emission region; a light-transmitting layer on the first light-emitting element; and a first wavelength conversion layer on the second light-emitting element and including a light scattering body, in which each of the first light-emitting element and the second light-emitting element includes four or more stacks, at least two of the four or more stacks (e.g., at least two selected from the four or more stacks) emitting a first component light, and a second wavelength conversion layer on the second light-emitting element and including a light scattering body. At least two of the four or more stacks emit the second component light, and any two adjacent stacks of the four or more stacks emit the first component light, and the other two adjacent stacks of the four or more stacks emit the second component light.
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Description

Technical Field

[0001] Embodiments of the present disclosure described herein relate to a display device. Background Art

[0002] With the development of multimedia, the importance of display devices has increased. Accordingly, one or more suitable display devices have been developed, such as, for example, a liquid crystal display device (LCD) and / or an organic light emitting diode display device (OLED).

[0003] Among these display devices, a self-emitting display device includes a self-emitting element, for example, an organic light emitting element. The self-emitting element may include two electrodes facing each other and a light emitting layer inserted between the two electrodes. When the self-emitting element is an organic light emitting element, electrons and holes provided from the two electrodes are recombined with each other in the light emitting layer to generate excitons, and light may be emitted (for example, to display an image) while the generated excitons change (for example, relax) from an excited state to a ground state.

[0004] The display device may include a color conversion element that realizes colors by receiving light from an organic light emitting element or the like. For example, the color conversion element may allow an image having one or more suitable colors to be observed by receiving blue light from the organic light emitting element and emitting blue light, green light, and red light, respectively. The color conversion element may be arranged on the display device in the form of a separate substrate or formed integrally directly with an element in the display device. Summary of the Invention

[0005] Aspects according to one or more embodiments of the present disclosure relate to a display device in which a white angle difference (WAD) depending on a user's viewing angle is reduced and the light efficiency is high.

[0006] Aspects according to one or more embodiments of the present disclosure relate to a display device in which the light efficiency may be high and the white angle difference (WAD) depending on a user's viewing angle may be small.

[0007] However, aspects of the present disclosure are not limited to those stated herein. By referring to the detailed description of the present disclosure given herein, the above and other aspects of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains.

[0008] According to one or more embodiments of the present disclosure, a display device includes a first substrate including a first emission region and a second emission region that are spaced apart from and / or separated from each other (e.g., spaced apart or separated); a first light-emitting element disposed on the first substrate and overlapping the first emission region and a second light-emitting element disposed on the first substrate and overlapping the second emission region; a light-transmitting layer disposed on the first light-emitting element; and a first wavelength conversion layer disposed on the second light-emitting element and including a light scatterer, wherein each of the first light-emitting element and the second light-emitting element includes four or more stacked bodies, at least two of the four or more stacked bodies (e.g., at least two selected from the four or more stacked bodies) are configured to emit first component light, at least two of the four or more stacked bodies (e.g., at least two selected from the four or more stacked bodies) are configured to emit second component light, and any two adjacent stacked bodies of the four or more stacked bodies (e.g., any two adjacent stacked bodies selected from the four or more stacked bodies) are configured to emit first component light, and the other two (e.g., the remaining two) adjacent stacked bodies of the four or more stacked bodies (e.g., the other two (e.g., the remaining two) adjacent stacked bodies selected from the four or more stacked bodies) are configured to emit second component light.

[0009] The light-transmitting layer may not include a light scatterer (e.g., any light scatterer may be excluded), or based on the total weight of the light-transmitting layer (100 wt% of the light-transmitting layer), the amount of the light scatterer included is about 8.5 wt% or less.

[0010] The first component light may be blue light, and the second component light may be yellow light, yellow-green light, or green light, and the first light-emitting element and the second light-emitting element may be configured to emit white light.

[0011] The resonance regions of the first component light and the second component light may overlap with each other.

[0012] Each of the first light-emitting element and the second light-emitting element may include an anode electrode, a hole injection layer disposed on the anode electrode, a first stacked body disposed on the hole injection layer, a second stacked body disposed on the first stacked body, a third stacked body disposed on the second stacked body, a fourth stacked body disposed on the third stacked body, a fifth stacked body disposed on the fourth stacked body, an electron injection layer disposed on the fifth stacked body, and a cathode electrode disposed on the electron injection layer, and two of the first stacked body to the fifth stacked body (e.g., two selected from the first stacked body to the fifth stacked body) may be configured to emit first component light, and the other three (e.g., the remaining three) (e.g., the other three (e.g., the remaining three) selected from the first stacked body to the fifth stacked body) may be configured to emit second component light.

[0013] The two stacks configured to emit the first component light may have different thicknesses from each other, and two of the other three stacks configured to emit the second component light (e.g., two selected from the other three stacks configured to emit the second component light) may have different thicknesses from each other.

[0014] The sum of the thicknesses of the two stacks configured to emit the first component light and the sum of the thicknesses of the other three stacks configured to emit the second component light may be different from each other.

[0015] The second stack and the third stack may be configured to emit the first component light, and the first stack, the fourth stack, and the fifth stack may be configured to emit the second component light.

[0016] The first stack and the second stack may be configured to emit the first component light, and the third stack, the fourth stack, and the fifth stack may be configured to emit the second component light.

[0017] The first to fifth stacks may each include a hole transport layer (the first to fifth hole transport layers), and the hole transport layers (the first to fifth hole transport layers) have different thicknesses from each other.

[0018] Each of the first light-emitting element and the second light-emitting element may include a first charge generation layer disposed between the first stack and the second stack, a second charge generation layer disposed between the second stack and the third stack, a third charge generation layer disposed between the third stack and the fourth stack, and a fourth charge generation layer disposed between the fourth stack and the fifth stack.

[0019] The first wavelength conversion layer may further include a base resin and a first wavelength shifter.

[0020] According to one or more embodiments of the present disclosure, a display device includes a first substrate including a first emission region and a second emission region that are separated from and / or separated (e.g., spaced apart or separated) from each other; a plurality of anode electrodes disposed on the first substrate and disposed in the first emission region and the second emission region; a light-emitting layer disposed on the anode electrodes and including a plurality of stacks stacked in sequence; a cathode electrode disposed on the light-emitting layer; a light-transmitting layer disposed on the cathode electrode and overlapping with the first emission region; and a first wavelength conversion layer disposed on the cathode electrode and overlapping with the second emission region, wherein a resonance region of the first component light emitted by at least one of the plurality of stacks (e.g., at least one selected from the plurality of stacks) and a resonance region of the second component light emitted by at least another of the plurality of stacks (e.g., at least another selected from the plurality of stacks) overlap with each other.

[0021] The first component light may be blue light, the second component light may be yellow light, yellow-green light, or green light, and the fifth resonance region of the first component light and the fourth resonance region of the second component light may overlap with each other.

[0022] The light-emitting layer may include two or more stacks configured to emit the first component light and two or more stacks configured to emit the second component light.

[0023] The plurality of anode electrodes may be reflective electrodes.

[0024] According to one or more embodiments of the present disclosure, a display device includes: a first anode electrode and a second anode electrode, which are arranged on a first substrate spaced apart from and / or separated (e.g., spaced or separated) from each other; a light-emitting layer, arranged on the first anode electrode and the second anode electrode; a cathode electrode, arranged on the light-emitting layer; a light-transmitting layer, arranged on the cathode electrode and overlapping with the first anode electrode; and a first wavelength conversion layer, arranged on the cathode electrode and overlapping with the second anode electrode, wherein the thicknesses of the first anode electrode and the second anode electrode are different from each other.

[0025] The thickness of the first anode electrode may be less than the thickness of the second anode electrode.

[0026] The light-emitting layer may include a plurality of stacks, and the resonance region of the first component light emitted by at least one (e.g., at least one selected from the plurality of stacks) of the plurality of stacks and the resonance region of the second component light emitted by at least another (e.g., at least another selected from the plurality of stacks) of the plurality of stacks may overlap with each other.

[0027] The first component light may be blue light, and the second component light may be yellow light, yellow-green light, or green light.

[0028] The effects and / or aspects of the present disclosure are not limited to the foregoing effects, and one or more other appropriate effects and / or aspects are included in and / or should be apparent from the present specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Embodiments of the present disclosure will be described in more detail by referring to the accompanying drawings, and the above and other aspects and features of the present disclosure will become more apparent, wherein:

[0030] Figure 1 A perspective view for illustrating a display device according to one or more embodiments;

[0031] Figure 2 For illustration along Figure 1 A schematic cross-sectional view of a cross-section taken along line X1-X1';

[0032] Figure 3A plan view of a display device according to one or more embodiments;

[0033] Figure 4 is Figure 3 an enlarged view of region A1 of

[0034] Figure 5 is for illustrating Figure 4 a schematic cross-sectional view of a cross-section taken along line X2-X2’ of

[0035] Figure 6 a graph for illustrating the resonance of blue light and yellow-green light depending on the thickness of the organic material layer;

[0036] Figure 7 an enlarged cross-sectional view of a light-emitting element of a display device according to one or more embodiments;

[0037] Figure 8 an enlarged cross-sectional view of a light-emitting element of a display device according to one or more embodiments;

[0038] Figure 9 is a cross-sectional view for illustrating a part of a display device according to one or more embodiments; and

[0039] Figure 10 is Figure 9 an enlarged view of region A3 of Detailed Description

[0040] The present invention will now be described more fully hereinafter with reference to the accompanying drawings in which embodiments of the disclosure are shown. However, the present invention may be embodied in different forms and should not be construed as limited to the one or more embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0041] It will also be understood that if a layer is referred to as being “on” another layer or substrate (e.g., when a layer is referred to as being “on” another layer or substrate), it can be directly on the other layer or substrate, or an intervening layer may also be present. Like reference numerals throughout the specification indicate the same components.

[0042] It will be understood that although the terms “first” and / or “second” etc. may be used herein to describe one or more suitable elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the teachings of the present disclosure, a first element discussed may be referred to as a second element. Similarly, a second element may also be referred to as a first element.

[0043] In this specification, “including A or B,” “A and / or B,” etc. mean A or B, or A and B.

[0044] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. As used herein, expressions such as "at least one of...", "one of...", and "selected from..." when before / after a list of elements modify the entire list of elements and not a single element of the list. For example, "at least one of a, b, and c", "at least one selected from a, b, and c", etc., can indicate only a, only b, only c, both a and b (e.g., a and b simultaneously), both a and c (e.g., a and c simultaneously), both b and c (e.g., b and c simultaneously), all of a, b, and c, or variations thereof.

[0045] As used herein, the terms "substantially", "about", and similar terms are used as approximate terms and not as terms of degree, and are intended to account for the inherent deviations in measured or calculated values that would be recognized by a person of ordinary skill in the art. As used herein, "substantially" includes the recited value and means within an acceptable range of deviation determined for a particular value by a person of ordinary skill in the art considering the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "substantially" can mean within one or more standard deviations of the recited value, or within ±30%, ±20%, ±10%, or ±5% of the recited value.

[0046] Also, any numerical range recited herein is intended to include all sub-ranges of the same numerical precision falling within the recited range. For example, the range "1.0 to 10.0" is intended to include between the minimum value of 1.0 and the maximum value of 10.0 recited (and including 1.0 and 10.0), i.e., all sub-ranges having a minimum value equal to or greater than 1.0 and a maximum value equal to or less than 10.0, such as, for example, 2.4 to 7.6. Any maximum numerical limit recited herein is intended to include all lower numerical limits falling therein and any minimum numerical limit recited in this specification is intended to include all higher numerical limits falling therein. Accordingly, the applicant reserves the right to amend this specification (including the claims) to expressly recite any sub-ranges falling within the ranges expressly recited herein.

[0047] Further, when describing embodiments of the present disclosure, the use of "may" refers to "one or more embodiments of the present disclosure".

[0048] As used herein, the singular forms "a", "an", and "the" are also intended to include the plural forms unless the context clearly indicates otherwise.

[0049] The description of a feature or aspect in each embodiment should generally consider other similar features or aspects that may be applicable to other embodiments.

[0050] In the context of this application and unless otherwise defined, the terms “use,” “using,” and “used” may be considered synonymous with the terms “utilize,” “utilizing,” and “utilized,” respectively. Further, when describing embodiments of the present invention, the use of “may” refers to “one or more embodiments of the present invention.”

[0051] Hereinafter, embodiments will be described in more detail with reference to the accompanying drawings.

[0052] Figure 1 To illustrate a perspective view of a display device according to one or more embodiments. Figure 2 To illustrate a Figure 1 schematic cross-sectional view of a cross-section taken along line X1-X1'. Figure 3 To illustrate a plan view of a display device according to one or more embodiments.

[0053] Reference Figure 1 , Figure 2 and Figure 3 , a display device 1 according to one or more embodiments can be applied to a portable electronic device, such as, a mobile phone, a smartphone, a tablet personal computer (PC), a mobile communication terminal, an electronic notebook, an e-book, a portable multimedia player (PMP), a navigation device, and / or a ultra-mobile personal computer (UMPC). In one or more embodiments, a display device 1 according to one or more embodiments can be applied as a display unit of a television, a laptop computer, a monitor, a billboard, and / or an Internet of Things (IoT) device. These electronic devices are provided only as examples, and without departing from the concept of the present disclosure, the display device 1 can also be used in other electronic devices.

[0054] In Figure 1In this context, a first direction DR1, a second direction DR2, and a third direction DR3 are defined. The first direction DR1 and the second direction DR2 may be orthogonal (e.g., perpendicular) to each other, the first direction DR1 and the third direction DR3 may be orthogonal (e.g., perpendicular) to each other, and the second direction DR2 and the third direction DR3 may be orthogonal (e.g., perpendicular) to each other. It can be understood that the first direction DR1 refers to the longitudinal direction in the drawing, the second direction DR2 refers to the lateral direction in the drawing, and the third direction DR3 refers to the upward and downward directions in the drawing, i.e., the thickness direction. In the following description, unless otherwise indicated, the term "direction" may refer to two directions (e.g., both directions simultaneously) towards both sides (e.g., opposite sides) extending along that direction. Additionally, if two "directions" (e.g., both "directions" simultaneously) extending to both sides (e.g., opposite sides) need to be distinguished from each other (e.g., when two "directions" (e.g., both "directions" simultaneously) extending to both sides (e.g., opposite sides) need to be distinguished from each other), one side will be referred to as "one side in that direction", and the other side will be referred to as "the other side in that direction". In Figure 1 this context, the direction of the arrow will be referred to as one side, and the direction opposite to the arrow direction will be referred to as the other side. Additionally, the third direction DR3 may be referred to as the thickness direction.

[0055] Hereinafter, for the sake of convenience in explanation, when referring to the surface of the display device 1 or the surface of each component constituting the display device 1, one surface on one side in the direction of the displayed image (i.e., the third direction DR3) will be referred to as the upper surface, and the surface opposite to this one surface will be referred to as the lower surface. However, the present disclosure is not limited thereto, and one surface and the other surface of a component may be referred to as the front surface and the rear surface, respectively. Additionally, when describing the relative positions of the components of the display device 1, one side in the third direction DR3 may be referred to as the upper side, and the other side in the third direction DR3 may be referred to as the lower side.

[0056] The display device 1 has a three-dimensional shape. For example, the display device 1 may have a cuboid shape or a three-dimensional shape similar to a cuboid shape. In one or more embodiments, in a plan view, the display device 1 according to one or more embodiments may have a shape similar to a rectangular shape. For example, as Figure 1As explained, in a plan view, the display device 1 according to one or more embodiments may have a shape similar to a rectangular shape, which has a short side in a first direction DR1 and a long side in a second direction DR2, but the present disclosure is not limited thereto. For example, in a plan view, the shape of the display device 1 according to one or more embodiments may be such that the corners where the short side in the first direction DR1 and the long side in the second direction DR2 intersect may be rounded or right-angled with a set or predetermined curvature, and is not limited to a shape similar to a rectangular shape, and may be a shape similar to other polygonal shapes, circular shapes, or elliptical shapes.

[0057] The display device 1 may further include a display panel 10, a flexible printed circuit board FPC, and a driving chip IC. The display panel 10 may include a display area DA where an image is displayed and a non-display area NDA where no image is displayed. In one or more embodiments, the non-display area NDA may be arranged around the edge of the display area DA (e.g., surrounding the edge of the display area DA), but the present disclosure is not limited thereto. On one side in the third direction DR3 in Figure 1 a user may observe the image displayed in the display area DA.

[0058] As Figure 2 explained, the display panel 10 may include a light-emitting unit 100 and a light-transmitting unit 300 opposite to (e.g., facing) the light-emitting unit 100, and may further include a sealing member 700 that couples the light-emitting unit 100 and the light-transmitting unit 300 to each other and a filling unit 500 filled between the light-emitting unit 100 and the light-transmitting unit 300.

[0059] The light-emitting unit 100 may include elements and circuits for displaying an image (e.g., a pixel circuit (such as a switching element)), a pixel defining film 170 that defines an emission area and a non-emission area in the display area DA to be described in more detail later (see Figure 5 ) and a self-emitting element. In one or more embodiments, the self-emitting element may include at least one of an organic light-emitting diode, a quantum dot light-emitting diode, an inorganic material-based micro light-emitting diode (e.g., a micro LED), and a nano-sized inorganic material-based light-emitting diode (e.g., a nano LED). Hereinafter, for convenience of explanation, the case where the self-emitting element is an organic light-emitting diode will be described in more detail by way of example.

[0060] The light-transmitting unit 300 may be located on the light-emitting unit 100 and may face the light-emitting unit 100. In one or more embodiments, the light-transmitting unit 300 may include a color conversion pattern that converts the color of incident light emitted from the light-emitting unit 100 and irradiated onto the light-transmitting unit 300. In one or more embodiments, the light-transmitting unit 300 may include at least one of a color filter layer 320 (see Figure 5 ) and a light-transmitting member to be described in more detail later as the color conversion pattern. In one or more embodiments, the light-transmitting unit 300 may also include both the color filter layer 320 and the light-transmitting member (e.g., including the color filter layer 320 and the light-transmitting member simultaneously). The light-transmitting member may include at least one of a wavelength shifter and a light scatterer to be described in more detail later.

[0061] In the non-display area NDA, the sealing member 700 may be located between the light-emitting unit 100 and the light-transmitting unit 300. The sealing member 700 may be disposed along the edge in the non-display area NDA of the light-emitting unit 100 and the light-transmitting unit 300 so as to surround the display area DA in a plan view (e.g., around the display area DA). The light-emitting unit 100 and the light-transmitting unit 300 may be coupled to each other via the sealing member 700.

[0062] In one or more embodiments, the sealing member 700 may be made of an organic material. As an example, the sealing member 700 may be made of an epoxy resin, but the present disclosure is not limited thereto. In one or more embodiments, the sealing member 700 may also have a form including a frit such as glass.

[0063] The filling unit 500 may be located in the space surrounded by the sealing member 700 between the light-emitting unit 100 and the light-transmitting unit 300 (e.g., the sealing member 700 may be around the light-transmitting unit 300 or may surround the light-transmitting unit 300). The filling unit 500 may fill the space between the light-emitting unit 100 and the light-transmitting unit 300.

[0064] In one or more embodiments, the filling unit 500 may be made of a material configured to transmit light. In one or more embodiments, the filling unit 500 may be made of an organic material. For example, the filling unit 500 may be made of a silicone-based organic material, an epoxy-based organic material, and / or a mixture of a silicone-based organic material and an epoxy-based organic material.

[0065] Referring to Figure 3 , in addition to the display panel 10, the display device 1 may further include a flexible printed circuit board FPC and a driving chip IC.

[0066] The non-display area NDA of the display panel 10 may include a pad area PDA, and a plurality of connection pads PD may be located in the pad area PDA. The pad area PDA may be defined on the light-emitting unit 100. Accordingly, the plurality of connection pads PD may be arranged on the light-emitting unit 100.

[0067] The flexible printed circuit board FPC may be connected to the connection pad PD. The flexible printed circuit board FPC may electrically connect the circuit board and the light-emitting unit 100. The circuit board provides signals and / or power, etc. for driving the display device 1.

[0068] The driving chip IC may be electrically connected to the circuit board, etc., to receive data and / or signals, etc. In one or more embodiments, the driving chip IC may be a data driving chip, and may receive a data control signal and / or image data, etc. from the circuit board, etc., and generate and output a data voltage, etc. corresponding to the image data.

[0069] In one or more embodiments, the driving chip IC may be mounted on the flexible printed circuit board FPC. For example, the driving chip IC may be mounted on the flexible printed circuit board FPC in the form of a chip on film (COF).

[0070] The data voltage provided by the driving chip IC and / or the power, etc. provided by the circuit board may be transmitted to the pixel circuit, etc. of the light-emitting unit 100 via the flexible printed circuit board FPC and the connection pad PD.

[0071] Hereinafter, a plurality of emission regions defined in the light-emitting unit 100 of the display panel 10 and a plurality of light-transmitting regions defined in the light-transmitting unit 300 of the display panel 10 will be described in more detail.

[0072] Figure 4 For Figure 3 an enlarged view of the region A1. More specifically, Figure 4 For Figure 3 a schematic plan view of a pixel group in the display panel 10. Figure 5 For Figure 4 an explanatory schematic cross-sectional view of a cross-section taken along the line X2-X2' of

[0073] In addition to Figure 4 referring also to Figure 5 a plurality of emission regions EA1, EA2, and EA3 may be defined in the light-emitting unit 100 of the display device 1 according to one or more embodiments, and a plurality of light-transmitting regions TA1, TA2, and TA3 may be defined in the light-transmitting unit 300 of the display device 1.

[0074] The display area DA and the non-display area NDA defined in the display device 1 may be applied to the light-emitting unit 100 and the light-transmitting unit 300.

[0075] AsFigure 3 and Figure 4 As explained in Figure 4 , the first emission region EA1, the second emission region EA2, and the third emission region EA3 may be defined in the display region DA of the light emitting unit 100. The first emission region EA1, the second emission region EA2, and the third emission region EA3 may be regions where light generated by the light emitting elements of the light emitting unit 100 is emitted to the outside of the light emitting unit 100, and the non-emission region NEA may be a region where light is not emitted to the outside of the light emitting unit 100. In one or more embodiments, the non-emission region NEA may be around the first emission region EA1, the second emission region EA2, and the third emission region EA3 in the display region DA (e.g., surrounding the first emission region EA1, the second emission region EA2, and the third emission region EA3 in the display region DA), but the present disclosure is not limited thereto.

[0076] In one or more embodiments, the light emitted from the first emission region EA1, the second emission region EA2, and the third emission region EA3 to the outside may be light of a first color. In one or more embodiments, the light of the first color may be blue light. In one or more embodiments, the light of the first color may be mixed light, and may be a mixture of two or more of blue light, green light, and red light (e.g., a mixture of two or more selected from blue light, green light, and red light). In one or more embodiments, the light of the first color may be white light obtained by mixing blue light and yellow-green light with each other, or white light obtained by mixing blue light and yellow light with each other. Red light may have a peak wavelength in the range of about 610 nm to about 650 nm, green light may have a peak wavelength in the range of about 510 nm to about 550 nm, blue light may have a peak wavelength in the range of about 440 nm to about 480 nm, yellow light may have a peak wavelength in the range of about 570 nm to about 610 nm, and yellow-green light may have a peak wavelength in the range of about 530 nm to about 560 nm. Here, the peak wavelength refers to the wavelength at which the intensity of the light is the highest.

[0077] In one or more embodiments, as Figure 4 explained in Figure 4 , the first emission region EA1 and the third emission region EA3 may be sequentially positioned along the second direction DR2, and the second emission region EA2 may be located on one side of the space separated and / or isolated (e.g., spaced apart or separated) from each other between the first emission region EA1 and the third emission region EA3, such that the first emission region EA1, the second emission region EA2, and the third emission region EA3 may form a group, and as Figure 3As explained, a group formed by the first emission region EA1, the second emission region EA2, and the third emission region EA3 may be repeatedly arranged in the display region DA along the first direction DR1 and the second direction DR2, but the present disclosure is not limited thereto. For example, the arrangements of the first emission region EA1, the second emission region EA2, and the third emission region EA3 may be differently or appropriately changed such that the first emission region EA1, the second emission region EA2, and the third emission region EA3 may be sequentially positioned along the second direction DR2. Hereinafter, for convenience of explanation, the case of arranging the first emission region EA1, the second emission region EA2, and the third emission region EA3 as explained in Figure 4 will be described in more detail by way of example.

[0078] In one or more embodiments, the areas of the first emission region EA1, the second emission region EA2, and the third emission region EA3 may be substantially the same as each other, but the present disclosure is not limited thereto. For example, the areas of the first emission region EA1, the second emission region EA2, and the third emission region EA3 may also be different from each other. In one or more embodiments, in a plan view, the first emission region EA1, the second emission region EA2, and the third emission region EA3 may have a square shape (e.g., may each have a square shape), but the present disclosure is not limited thereto. Hereinafter, for convenience of explanation, the case where the first emission region EA1, the second emission region EA2, and the third emission region EA3 have a square shape (e.g., may each have a square shape) and have substantially the same area in a plan view will be mainly described.

[0079] The first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 may be defined in the display region DA of the light-transmitting unit 300. The first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 may be regions where the light generated in the first emission region EA1, the second emission region EA2, and the third emission region EA3 is transmitted, respectively. The light-blocking region BA may be located around the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 in the display region DA of the light-transmitting unit 300. In one or more embodiments, the light-blocking region BA may be around the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 (e.g., surrounding the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3), but the present disclosure is not limited thereto. For example, the light-blocking region BA may be located not only in the display region DA of the light-transmitting unit 300 but also in the non-display region NDA of the light-transmitting unit 300.

[0080] The first light-transmitting region TA1 may correspond to the first emission region EA1 and overlap with the first emission region EA1, the second light-transmitting region TA2 may correspond to the second emission region EA2 and overlap with the second emission region EA2, and the third light-transmitting region TA3 may correspond to the third emission region EA3 and overlap with the third emission region EA3. In one or more embodiments, the first light-transmitting region TA1 may have an area substantially the same as the area of the first emission region EA1 and completely overlap with the first emission region EA1, the second light-transmitting region TA2 may have an area substantially the same as the area of the second emission region EA2 and completely overlap with the second emission region EA2, and the third light-transmitting region TA3 may have an area substantially the same as the area of the third emission region EA3 and completely overlap with the third emission region EA3, but the present disclosure is not limited thereto. For example, the first light-transmitting region TA1 may have an area different from the area of the first emission region EA1, the second light-transmitting region TA2 may have an area different from the area of the second emission region EA2, and the third light-transmitting region TA3 may have an area different from the area of the third emission region EA3. Hereinafter, for convenience of explanation, it will be mainly described that the first light-transmitting region TA1 has an area substantially the same as the area of the first emission region EA1 and completely overlaps with the first emission region EA1, the second light-transmitting region TA2 has an area substantially the same as the area of the second emission region EA2 and completely overlaps with the second emission region EA2, and the third light-transmitting region TA3 has an area substantially the same as the area of the third emission region EA3 and completely overlaps with the third emission region EA3.

[0081] The first light-transmitting region TA1 and the third light-transmitting region TA3 may be sequentially positioned along the second direction DR2, and the second light-transmitting region TA2 may be located on one side of the space between the first light-transmitting region TA1 and the third light-transmitting region TA3 that are separated and / or separated from each other (e.g., spaced apart or separated), such that the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3 may form a pixel group. Additionally, as Figure 3 illustrated, a plurality of pixel groups may be repeatedly arranged in the display area DA along the first direction DR1 and the second direction DR2.

[0082] As described above, the light of the first color provided from the light emitting unit 100 can be transmitted through the first light transmissive region TA1, the second light transmissive region TA2, and the third light transmissive region TA3, and then provided to the outside of the display device 1. The light emitted to the outside of the display device 1 from the first light transmissive region TA1 can be referred to as the first emitted light L1, the light emitted to the outside of the display device 1 from the second light transmissive region TA2 can be referred to as the second emitted light L2, and the light emitted to the outside of the display device 1 from the third light transmissive region TA3 can be referred to as the third emitted light L3. The first emitted light L1 can be light of the first color, the second emitted light L2 can be light of the second color, and the third emitted light L3 can be light of the third color. In one or more embodiments, the light of the first color can be blue light, the light of the second color can be green light, and the light of the third color can be red light.

[0083] Hereinafter, the structure of the display device 1 will be described in more detail.

[0084] Reference Figure 5 , as described above, the display device 1 can include a light emitting unit 100, a light transmissive unit 300 disposed on the light emitting unit 100 and opposite to the light emitting unit 100 (e.g., facing the light emitting unit 100), and a filling unit 500 inserted between the light emitting unit 100 and the light transmissive unit 300. Hereinafter, for convenience of explanation, the light emitting unit 100, the light transmissive unit 300, and the filling unit 500 will be described in sequence.

[0085] The light emitting unit 100 can have a structure in which a first substrate 110, a buffer layer 120, a bottom metal layer BML, a first insulating layer 130, a semiconductor layer ACT, a gate insulating layer 140, a gate electrode GE, a second insulating layer 150, a source electrode SE / drain electrode DE, a third insulating layer 160, a light emitting element, a pixel defining film 170, a first capping layer CPL1, and a thin film encapsulation layer TFE are sequentially stacked on one side in the third direction DR3.

[0086] The first substrate 110 of the light emitting unit 100 can be used as a base of the light emitting unit 100. The first substrate 110 can be made of a material having light transmissive characteristics. The first substrate 110 can be a glass substrate and / or a plastic substrate. When the first substrate 110 is a plastic substrate, the first substrate 110 can have elasticity. In one or more embodiments, if the first substrate 110 is a plastic substrate (e.g., when the first substrate 110 is a plastic substrate), the first substrate 110 can include polyimide, but the present disclosure is not limited thereto.

[0087] The buffer layer 120 of the light-emitting unit 100 may be disposed on the first substrate 110. The buffer layer 120 may be used to prevent foreign substances and / or moisture from penetrating through the first substrate 110 into the elements disposed on the buffer layer 120 (or to avoid foreign substances and / or moisture from penetrating through the first substrate 110 into the elements disposed on the buffer layer 120).

[0088] In one or more embodiments, the buffer layer 120 may include an inorganic material, such as SiO2, SiN x or SiO x N y , and may be formed as a single layer or multiple layers, but the present disclosure is not limited thereto.

[0089] The bottom metal layer BML of the light-emitting unit 100 may be disposed on the buffer layer 120. The bottom metal layer BML may block external light or light emitted from the light-emitting element, which will be described in more detail later, from being introduced into the semiconductor layer ACT. Accordingly, leakage current generated due to light in the thin-film transistor, which will be described in more detail later, may be prevented or reduced.

[0090] The bottom metal layer BML may be made of a material that blocks light and has conductivity. In one or more embodiments, the bottom metal layer BML may include a single material of a metal (such as silver (Ag), nickel (Ni), gold (Au), platinum (Pt), aluminum (Al), copper (Cu), molybdenum (Mo), and titanium (Ti)), or an alloy thereof. In one or more embodiments, the bottom metal layer BML may have a single-layer structure or a multi-layer structure. For example, if the bottom metal layer BML has a multi-layer structure (e.g., when the bottom metal layer BML has a multi-layer structure), the bottom metal layer BML may be a stacked structure of titanium (Ti) / copper (Cu) / indium tin oxide (ITO) or a stacked structure of titanium (Ti) / copper (Cu) / aluminum oxide (Al2O3), but the present disclosure is not limited thereto.

[0091] In one or more embodiments, a plurality of bottom metal layers BML may be provided corresponding to respective semiconductor layers ACT and may overlap with the semiconductor layers ACT. In one or more embodiments, the width of the bottom metal layer BML may be greater than the width of the semiconductor layer ACT.

[0092] In one or more embodiments, the bottom metal layer BML may be a data line, a power line, and / or a line that electrically connects the thin-film transistor not illustrated herein Figure 5 to the thin-film transistors (GE, ACT, DE, and SE) illustrated herein Figure 5 and so on. In one or more embodiments, the bottom metal layer BML may be made of a material having a lower resistance than the source electrode SE and the drain electrode DE.

[0093] The first insulating layer 130 of the light-emitting unit 100 may be disposed on the bottom metal layer BML. The first insulating layer 130 may be used to electrically insulate the bottom metal layer BML and the semiconductor layer ACT from each other. The first insulating layer 130 may cover the bottom metal layer BML.

[0094] In one or more embodiments, the first insulating layer 130 may include an inorganic material, such as, SiO2, SiN x , SiO x N y , Al2O3, TiO2, Ta2O, HfO2, and / or ZrO2, but the present disclosure is not limited thereto.

[0095] The semiconductor layer ACT of the light-emitting unit 100 may be disposed on the first insulating layer 130. In the display area DA of the light-emitting unit 100, the semiconductor layer ACT may be disposed to correspond to the first emission area EA1, the second emission area EA2, and the third emission area EA3, respectively. In addition, the semiconductor layer ACT may be disposed to overlap with the respective bottom metal layers BML, and accordingly, the generation of leakage current in the semiconductor layer ACT may be suppressed or reduced.

[0096] The semiconductor layer ACT may include an oxide semiconductor. In one or more embodiments, the semiconductor layer ACT may be made of Zn oxide, In-Zn oxide, and / or Ga-In-Zn oxide, etc., which are zinc (Zn) oxide-based materials, or may be made of In-Ga-Zn-O (IGZO) semiconductors in which ZnO contains metals (such as indium (In) and / or gallium (Ga)), but the present disclosure is not limited thereto. For example, the semiconductor layer ACT may include amorphous silicon and / or polycrystalline silicon, etc.

[0097] The gate electrode GE of the light-emitting unit 100 may be disposed on the semiconductor layer ACT. In the display area DA, the gate electrode GE may be disposed to overlap with the semiconductor layer ACT. In one or more embodiments, the width of the gate electrode GE may be less than the width of the semiconductor layer ACT, but the present disclosure is not limited thereto.

[0098] In one or more embodiments, considering the adhesion to adjacent layers, the surface flatness of the layer to be stacked, and / or processability, etc., the gate electrode GE may include one or more of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu), and may be formed as a single layer or multiple layers, but the present disclosure is not limited thereto.

[0099] The gate insulating layer 140 of the light emitting unit 100 may be disposed between the semiconductor layer ACT and the gate electrode GE. The gate insulating layer 140 may be used to insulate the semiconductor layer ACT and the gate electrode GE from each other. In one or more embodiments, the gate insulating layer 140 may be formed in a shape that is partially patterned on one side in the third direction DR3 of the first substrate 110, and may have a width that is less than the width of the semiconductor layer ACT and greater than the width of the gate electrode GE, but the present disclosure is not limited thereto.

[0100] In one or more embodiments, the gate insulating layer 140 may include an inorganic material. For example, the gate insulating layer 140 may include the inorganic materials exemplified when describing the first insulating layer 130.

[0101] The second insulating layer 150 of the light emitting unit 100 may be disposed on the gate insulating layer 140 to cover the semiconductor layer ACT and the gate electrode GE. In one or more embodiments, the second insulating layer 150 may be used as a planarization film for providing a flat surface.

[0102] The second insulating layer 150 may include an organic material. In one or more embodiments, the second insulating layer 150 may include at least one of photoacrylic acid (PAC), polystyrene, polymethyl methacrylate (PMMA), polyacrylonitrile (PAN), polyamide, polyimide, polyarylether, heterocyclic polymer, parylene, fluoropolymer, epoxy resin, benzocyclobutene resin, silicone resin, and silane resin, but the present disclosure is not limited thereto.

[0103] The source electrode SE and the drain electrode DE of the light emitting unit 100 may be spaced apart from and / or separated from (e.g., spaced or separated) each other, and disposed on the second insulating layer 150. The source electrode SE and the drain electrode DE may each be connected to the semiconductor layer ACT through a contact hole penetrating the second insulating layer 150. In one or more embodiments, the source electrode SE may penetrate not only the second insulating layer 150 but also the first insulating layer 130, and be connected to the bottom metal layer BML. When the bottom metal layer BML is a part of a line for transmitting signals and / or voltages, etc., the source electrode SE may be connected to the bottom metal layer BML (e.g., electrically coupled to the bottom metal layer BML) to receive the voltage, etc. provided to the line. In one or more embodiments, if the bottom metal layer BML is a floating pattern rather than a separate line (e.g., when the bottom metal layer BML is a floating pattern rather than a separate line), the voltage, etc. provided to the source electrode SE may be transmitted to the bottom metal layer BML, etc.

[0104] The source electrode SE and the drain electrode DE may include aluminum (Al), copper (Cu), and / or titanium (Ti), etc., and may be formed as multiple layers or a single layer. In one or more embodiments, the source electrode SE and the drain electrode DE may have a multi-layer structure of Ti / Al / Ti, but the present disclosure is not limited thereto.

[0105] The above semiconductor layer ACT, gate electrode GE, source electrode SE, and drain electrode DE may constitute a thin-film transistor as a switching element. In one or more embodiments, the thin-film transistors may be respectively located in the first emission region EA1, the second emission region EA2, and the third emission region EA3. In one or more embodiments, a part of the thin-film transistor may be located in the non-emission region NEA.

[0106] The third insulating layer 160 of the light-emitting unit 100 may be disposed on the second insulating layer 150 to cover the thin-film transistor. In one or more embodiments, the third insulating layer 160 may be a planarization film.

[0107] The third insulating layer 160 may be made of an organic material. In one or more embodiments, the third insulating layer 160 may include acrylic resin, epoxy resin, imide resin, and / or ester resin, etc., or may include a photosensitive organic material, but the present disclosure is not limited thereto.

[0108] In the display area DA of the light-emitting unit 100, a plurality of anode electrodes ANO may be located on the third insulating layer 160. Each anode electrode ANO may be spaced apart from and / or separated from each other (e.g., spaced apart or separated).

[0109] The anode electrode ANO may overlap with the first emission region EA1, the second emission region EA2, and the third emission region EA3 respectively, and at least a part of the anode electrode ANO may extend to the non-emission region NEA. The anode electrode ANO may be connected to the drain electrode DE of the thin-film transistor.

[0110] In one or more embodiments, the anode electrode ANO may be a reflective electrode, and in this case, the anode electrode ANO may be a metal layer including a metal (such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, and / or Cr). In one or more embodiments, the anode electrode ANO may further include a metal oxide layer stacked on the metal layer. In one or more embodiments, the anode electrode ANO may have a multi-layer structure, such as a double-layer structure of ITO / Ag, Ag / ITO, ITO / Mg, or ITO / MgF2, or a triple-layer structure of ITO / Ag / ITO.

[0111] In one or more embodiments, the plurality of anode electrodes ANO may have the same thickness. In one or more embodiments, some of the plurality of anode electrodes ANO may have a different thickness from other anode electrodes ANO.

[0112] The pixel defining film 170 of the light emitting unit 100 may be disposed on the anode electrode ANO. The pixel defining film 170 may define openings exposing the anode electrode ANO in the first emission region EA1, the second emission region EA2, and the third emission region EA3. The pixel defining film 170 may overlap the edge of the anode electrode ANO.

[0113] In the third direction DR3, the pixel defining film 170 may overlap the light blocking region BA of the light transmissive unit 300, which will be described in more detail later. Additionally, in the third direction DR3, the pixel defining film 170 may also overlap the bank pattern BK, which will be described in more detail later.

[0114] In one or more embodiments, the pixel defining film 170 may include an organic insulating material (e.g., polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, or benzocyclobutene (BCB)), but the present disclosure is not limited thereto.

[0115] The light emitting layer OL of the light emitting unit 100 may be disposed on the anode electrode ANO. In one or more embodiments, the light emitting layer OL may be in the form of a substantially continuous film formed across the plurality of emission regions EA1, EA2, and EA3 and the non-emission region NEA. In one or more embodiments, the light emitting layer OL may be located only in the display area DA, but the present disclosure is not limited thereto. For example, a part of the light emitting layer OL may also be further disposed in the non-display area NDA. The light emitting layer OL will be described in more detail later.

[0116] The cathode electrode CE of the light emitting unit 100 may be disposed on the light emitting layer OL. In one or more embodiments, the cathode electrode CE may be disposed on the light emitting layer OL and may be in the form of a substantially continuous film formed across the plurality of emission regions EA1, EA2, and EA3 and the non-emission region NEA. For example, the cathode electrode CE may completely cover the light emitting layer OL.

[0117] The cathode electrode CE may have transmissive-reflective characteristics or transmissive characteristics. When the thickness of the cathode electrode CE is from several tens of angstroms to several hundreds of angstroms, the cathode electrode CE may have transmissive-reflective characteristics. In one or more embodiments, if the cathode electrode CE has transmissive-reflective characteristics (e.g., when the cathode electrode CE has transmissive-reflective characteristics), the cathode electrode CE may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, or their compounds (e.g., LiF) or their mixtures (e.g., a mixture of Ag and Mg), or a material having a multilayer structure (such as, LiF / Ca or LiF / Al). In one or more embodiments, the cathode electrode CE may have transmissive characteristics by including a transparent conductive oxide. In one or more embodiments, if the cathode electrode CE has the above-mentioned transmissive characteristics (e.g., when the cathode electrode CE has the above-mentioned transmissive characteristics), the cathode electrode CE may include tungsten oxide (W x O y ), titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), and / or magnesium oxide (MgO), etc.

[0118] The anode electrode ANO, the light-emitting layer OL, and the cathode electrode CE may form a light-emitting element. For example, the anode electrode ANO, the light-emitting layer OL, and the cathode electrode CE overlapping with the first emission region EA1 may form a first light-emitting element, the anode electrode ANO, the light-emitting layer OL, and the cathode electrode CE overlapping with the second emission region EA2 may form a second light-emitting element, and the anode electrode ANO, the light-emitting layer OL, and the cathode electrode CE overlapping with the third emission region EA3 may form a third light-emitting element. The first light-emitting element, the second light-emitting element, and the third light-emitting element may each be configured to emit light LE.

[0119] According to one or more embodiments, each light-emitting element may be a series-type or series-like light-emitting element, and may be configured to emit mixed light in which two or more component lights are mixed with each other. The multiple component lights have differences in period and microcavity, such that a white angle difference depending on the viewing angle of the user can be observed, or the efficiency of the emitted light of a specific color can be reduced.

[0120] When the light-emitting element is configured to utilize resonance in a region where the waves of the component lights overlap with each other, the white angle difference depending on the viewing angle of the user may be reduced and the light efficiency may be increased. The light-emitting element of the display device 1 according to one or more embodiments may emit a first component light LE1 (see Figure 7 ) and a second component light LE2 (see Figure 7A series-connected or series-like light-emitting element, and the resonance regions of the first component light LE1 and the second component light LE2 can overlap with each other. The light-emitting element can have an optimal or appropriate thickness of the organic material layer or the electrode so that the Nth resonance region of the first component light LE1 overlaps with the Mth resonance region of the second component light LE2. Here, N and M can be the same positive integer or different positive integers. 80% or more of the resonance region of any one of the first component light LE1 and the second component light LE2 can overlap with the resonance region of the other of the first component light LE1 and the second component light LE2.

[0121] In one or more embodiments, the emitted light LE emitted from the light-emitting element can be white light, the first component light LE1 can be blue light, and the second component light LE2 can be yellow light, yellow-green light, or green light.

[0122] Figure 6 To illustrate the first component light LE1 (see Figure 7 ) and the second component light LE2 (see Figure 7 ) that depend on the thickness of the organic material layer of the light-emitting element included in the display device according to one or more embodiments. For example, Figure 6 illustrates the results obtained by measuring or simulating the change in current efficiency depending on the thickness of the organic material layer for blue light B and yellow-green light GY. Here, the thickness of the organic material layer can be the sum of the thicknesses of the layers (such as a hole transport layer and / or a hole injection layer, etc.) disposed between the anode electrode ANO (see Figure 7 ) and the light-emitting material layer.

[0123] The current efficiency of blue light B and yellow-green light GY increases or decreases depending on the thickness of the organic material layer (such as a hole transport layer). The resonance region can be defined based on the point where the current efficiency decreases and then increases. Refer to Figure 6, blue light B may have a first resonance region B1 in a portion where the thickness of the organic material layer is from 0 nm to about 60 nm, a second resonance region B2 in a portion where the thickness of the organic material layer is from about 60 nm to about 190 nm, a third resonance region B3 in a portion where the thickness of the organic material layer is from about 190 nm to about 310 nm, a fourth resonance region B4 in a portion where the thickness of the organic material layer is from about 310 nm to about 440 nm, a fifth resonance region B5 in a portion where the thickness of the organic material layer is from about 440 nm to about 560 nm, a sixth resonance region B6 in a portion where the thickness of the organic material layer is from about 560 nm to about 680 nm, and a seventh resonance region B7 in a portion where the thickness of the organic material layer exceeds about 680 nm. Additionally, yellow-green light GY may have a first resonance region GY1 in a portion where the thickness of the organic material layer is from 0 nm to about 100 nm, a second resonance region GY2 in a portion where the thickness of the organic material layer is from about 100 nm to about 250 nm, a third resonance region GY3 in a portion where the thickness of the organic material layer is from about 250 nm to about 410 nm, a fourth resonance region GY4 in a portion where the thickness of the organic material layer is from about 410 nm to about 570 nm, and a fifth resonance region GY5 in a portion where the thickness of the organic material layer exceeds about 570 nm.

[0124] Reference Figure 6 , the entire portion of the fifth resonance region B5 of the visible blue light B overlaps with the fourth resonance region GY4 of the yellow-green light GY. A light-emitting element can be constructed based on the overlapping portion of the resonance regions of the two component lights.

[0125] The QD-1000IVL equipment available from ENC Technologies can be used to measure the change in current efficiency depending on the thickness, and simulation or calculation is performed through the SETFOS3.2 program. By measuring the refractive index (n) value and absorption rate (k) value with an ellipsometer device, and then using the refractive index value and absorption rate value, each layer is configured to have the same thickness as that in the actual element in the SETFOS3.2 program. The PL spectra of the first component light LE1 (see Figure 7 ) (or blue light) and the second component light LE2 (see Figure 7 ) (or yellow-green light) can be extracted from the integrating sphere spectrum and used as the source. By using the source, it is possible to simulate the resonance efficiency characteristics depending on the thickness of the organic material layer between the anode electrode ANO (see Figure 7 ) and the light-emitting material layer.

[0126] The thickness of the layers of the element can be confirmed by a transmission electron microscope (TEM). While destroying the element from the top using laser desorption ionization mass spectrometry (LDI-MS), the composition and molecular weight of each layer can be confirmed. In addition, the wavelength of the spectrum can be confirmed by the EL spectrum or PL spectrum of the panel.

[0127] The description provided herein Figure 6 is based on the relationship between the resonance regions of blue light B and green-yellow light GY, but the present disclosure is not limited thereto, and the type (kind) of the emitted light LE and the component lights LE1 and LE2 can be changed. Hereinafter, for convenience, the blue light B and the green-yellow light GY Figure 6 illustrated in Figure 6 will be mainly described. In

[0128] Reference Figure 7 , the emitted light LE emitted from the light-emitting layer OL can be mixed light in which the first component light LE1 and the second component light LE2 are mixed with each other. In one or more embodiments, the first component light LE1 can be blue light, the second component light LE2 can be green-yellow light, and the emitted light LE can be white light. The peak wavelength of the first component light LE1 can be from about 440 nm to about 480 nm, and the peak wavelength of the second component light LE2 can be from about 530 nm to about 560 nm.

[0129] In one or more embodiments, the light-emitting layer OL can have a structure (e.g., a tandem structure) in which a plurality of light-emitting layers are arranged to overlap each other as Figure 7 illustrated in

[0130] The hole injection layer HIL is a layer for facilitating the injection of holes from the anode electrode ANO into the plurality of stacked bodies ST1, ST2, ST3, ST4, and ST5, and the hole injection material is a material having the ability to transport holes from the anode electrode ANO at a low voltage and having excellent or appropriate hole injection effects. Examples of the hole injection material may include metal porphyrins, oligothiophenes, arylamine-based organic materials, hexanitrile hexaazatriphenylene-based organic materials, quinacridone-based organic materials, perylene-based organic materials, anthraquinone, polyaniline and polythiophene-based conductive polymers, diamine compounds containing aryl or heteroaryl, copper phthalocyanine (CuPc), poly(3,4-ethylenedioxythiophene) (PEDOT), polyaniline (PANI), and / or N,N'-dinaphthyl-N,N'-diphenylbenzidine (NPD), etc., but the present disclosure is not limited thereto.

[0131] The plurality of stacked bodies may be disposed on the hole injection layer HIL. For example, the light-emitting layer OL may include four or more stacked bodies, and two or more component lights may be emitted from the light-emitting layer OL. The light-emitting layer OL may include two or more stacked bodies configured to emit a first component light LE1 and two or more stacked bodies configured to emit a second component light LE2.

[0132] In one or more embodiments, the light-emitting layer OL may include a first stacked body ST1 including a first light-emitting material layer EML1, a second stacked body ST2 located on the first stacked body ST1 and including a second light-emitting material layer EML2, a third stacked body ST3 located on the second stacked body ST2 and including a third light-emitting material layer EML3, a fourth stacked body ST4 located on the third stacked body ST3 and including a fourth light-emitting material layer EML4, a fifth stacked body ST5 located on the fourth stacked body ST4 and including a fifth light-emitting material layer EML5, a first charge generation layer CGL1 located between the first stacked body ST1 and the second stacked body ST2, a second charge generation layer CGL2 located between the second stacked body ST2 and the third stacked body ST3, a third charge generation layer CGL3 located between the third stacked body ST3 and the fourth stacked body ST4, and a fourth charge generation layer CGL4 located between the fourth stacked body ST4 and the fifth stacked body ST5.

[0133] The first to fifth stacked bodies ST1, ST2, ST3, ST4, and ST5 may be disposed to overlap each other. The first to fifth light-emitting material layers EML1, EML2, EML3, EML4, and EML5 may be disposed to overlap each other. The first to fifth stacked bodies ST1, ST2, ST3, ST4, and ST5 may be sequentially disposed on the hole injection layer HIL in the thickness direction.

[0134] Two of the first to fifth stacks ST1, ST2, ST3, ST4, and ST5 (e.g., two selected from the first to fifth stacks ST1, ST2, ST3, ST4, and ST5) can be configured to emit first component light LE1, and the other three of the first to fifth stacks ST1, ST2, ST3, ST4, and ST5 (e.g., the other three selected from the first to fifth stacks ST1, ST2, ST3, ST4, and ST5) can be configured to emit second component light LE2. In one or more embodiments, the first light-emitting material layer EML1, the fourth light-emitting material layer EML4, and the fifth light-emitting material layer EML5 can be configured to emit second component light LE2 (e.g., yellow-green light). The second light-emitting material layer EML2 and the third light-emitting material layer EML3 can be configured to emit first component light LE1 (e.g., blue light). The resonance regions of the blue light of the first component light LE1 and the yellow-green light of the second component light LE2 overlap with each other, so that even when the display device 1 is viewed from the side, the efficiencies of the two component lights LE1 and LE2 may be equally reduced, and the white angle difference depending on the viewing angle of the user can be reduced.

[0135] The light-emitting material layers of two adjacent stacks among the multiple stacks ST1, ST2, ST3, ST4, and ST5 can be configured to emit the same type or kind of component light. Two adjacent stacks have one charge generation layer inserted between the two adjacent stacks. For example, the second light-emitting material layer EML2 of the second stack ST2 and the third light-emitting material layer EML3 of the third stack ST3 can be configured to emit first component light LE1. In one or more embodiments, the fourth light-emitting material layer EML4 of the fourth stack ST4 and the fifth light-emitting material layer EML5 of the fifth stack ST5 can be configured to emit second component light LE2. The present disclosure is not limited thereto, and two adjacent stacks can be configured to emit the same component light.

[0136] In one or more embodiments, each of the second emissive material layer EML2 and the third emissive material layer EML3 may include a host and a blue dopant. The host is not particularly limited as long as it is a commonly used material, but one or more selected from polycyclic derivatives (such as anthracene or pyrene), metal chelated quinoline compounds (such as tris(8-hydroxyquinolinato)aluminum), distyryl derivatives (such as distyryl anthracene derivatives and distyryl benzene derivatives), tetraphenylbutadiene derivatives, coumarin derivatives, oxadiazole derivatives, pyrenone derivatives, cyclopentadiene derivatives, pyrrolopyridine derivatives, pyrrolopyrrole derivatives, thiadiazolopyridine derivatives, and polymer derivatives (such as poly(phenylacetylene) derivatives, poly(phenylene) derivatives, and polythiophene derivatives) can be used as the host, and one or more substituents (such as aryl, heteroaryl, arylvinyl, amino, and / or cyano) can be introduced into these derivatives. For example, tris(8-hydroxyquinolinato)aluminum (Alq3), 4,4'-bis(N-carbazolyl)-1,1'-biphenyl (CBP), poly(N-vinylcarbazole) (PVK), 9,10-bis(naphthalen-2-yl)anthracene (ADN), 4,4',4''-tris(carbazol-9-yl)triphenylamine (TCTA), 1,3,5-tris(1-phenyl-1H-benzo[d]imidazol-2-yl)benzene (TPBi), 3-tert-butyl-9,10-bis(naphthalen-2-yl)anthracene (TBADN), distyrylarylene (DSA), 4,4'-bis(9-carbazolyl)-2,2''-dimethyl-biphenyl (CDBP), and / or 2-methyl-9,10-bis(naphthalen-2-yl)anthracene (MADN), etc. can be used as the host.

[0137] The blue dopant is not particularly limited as long as it is a commonly used material, but may include, for example, a fluorescent material including any one selected from the group consisting of (for example, any one consisting of the following): spiro-DPVBi, spiro-6P, distyrylbenzene (DSB), distyrylarylene (DSA), polyfluorene (PFO) polymers, poly(phenylene vinylene) (PPV) polymers, and DABNA-based boron polycyclic compounds. As another example, the blue dopant may include a phosphorescent material including an organometallic complex such as (4,6-F2ppy)2Ir(pic). Substituents (such as aryl, heteroaryl, arylvinyl, amino, and cyano) can be introduced into these compounds exemplified as the blue dopant.

[0138] In one or more embodiments, each of the first emissive material layer EML1, the fourth emissive material layer EML4, and the fifth emissive material layer EML5 may include a yellow-green host and a yellow-green dopant. As the yellow-green host, the above-described host materials may be used. The material of the yellow-green dopant is not particularly limited as long as it is a commonly used material, but may include one or more selected from coumarin derivatives, phthalimide derivatives, naphthalenedicarboximide derivatives, pyrenone derivatives, acridone derivatives, quinacridone derivatives, pyrrolopyrrole derivatives, cyclopentadiene derivatives, and / or tetracene derivatives (e.g., rubrene), and one or more substituents (e.g., aryl, heteroaryl, arylvinyl, amino, and / or cyano) may be introduced into these derivative compounds. For example, examples of the fluorescent material or the phosphorescent material may include tris(8-hydroxyquinoline)aluminum (Alq3), fac-tris(2-phenylpyridine)iridium (Ir(ppy)3), bis(2-phenylpyridine)(acetylacetonate)iridium(III) (Ir(ppy)2(acac)), and / or tris[2-(p-tolyl)pyridine]iridium(III) (Ir(mppy)3), etc.

[0139] The plurality of stacks ST1, ST2, ST3, ST4, and ST5 may respectively include hole transport layers HTL1, HTL2, HTL3, HTL4, and HTL5. The hole transport layers HTL1, HTL2, HTL3, HTL4, and HTL5 may be located on the anode electrode ANO or the charge generation layers CGL1, CGL2, CGL3, and CGL4. The hole transport layers HTL1, HTL2, HTL3, HTL4, and HTL5 may be used to facilitate the transport of holes and may each include a hole transport material. The hole transport material may include carbazole derivatives (e.g., N-phenylcarbazole and poly(N-vinylcarbazole) (PVK)), fluorene derivatives, and / or triphenylamine derivatives (e.g., N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (TPD), 4,4',4''-tris(N-carbazolyl)triphenylamine (TCTA), N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB), and / or 4,4'-cyclohexylidenebis[N,N-bis(4-methylphenyl)aniline] (TAPC)), etc., but the present disclosure is not limited thereto.

[0140] The plurality of stacks ST1, ST2, ST3, ST4, and ST5 may respectively include the above-described emissive material layers EML1, EML2, EML3, EML4, and EML5 located on the hole transport layers HTL1, HTL2, HTL3, HTL4, and HTL5.

[0141] Multiple stacks ST1, ST2, ST3, ST4, and ST5 may respectively include electron transport layers ETL1, ETL2, ETL3, ETL4, and ETL5 located on light-emitting material layers EML1, EML2, EML3, EML4, and EML5. In one or more embodiments, each of the electron transport layers ETL1, ETL2, ETL3, ETL4, and ETL5 may include an electron transport material, such as tris(8-hydroxyquinoline) aluminum (Alq3), 1,3,5-tris(1-phenyl-1H-benzo[d]imidazol-2-yl) benzene (TPBi), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen), 3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole (TAZ), 4-(naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole (NTAZ), 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole ( t Bu-PBD), bis(2-methyl-8-hydroxyquinolinato-N1,O8)-(1,1'-biphenyl-4-olato) aluminum (BAlq), bis(benzoquinolinato-10-hydroxy) beryllium (Bebq2), 9,10-bis(naphthalen-2-yl) anthracene (ADN), TPM-TAZ, Liq, and mixtures thereof. However, the present disclosure is not limited to the types or species of the above electron transport materials.

[0142] The stacks emitting blue light may further include an electron blocking layer and a hole blocking layer. In one or more embodiments, the second stack ST2 and the third stack ST3 may respectively include an electron blocking layer EBL2 and EBL3 and a hole blocking layer HBL2 and HBL3.

[0143] The electron blocking layers EBL2 and EBL3 may be respectively disposed between the light-emitting material layers EML2 and EML3 and the hole transport layers HTL2 and HTL3. The electron blocking layers EBL2 and EBL3 may include the above hole transport materials or the above hole transport materials and a metal (or metal compound) to prevent or reduce the electron transmission from the light-emitting material layers EML2 and EML3 to the hole transport layers HTL2 and HTL3. In one or more embodiments, each of the above hole transport layers HTL2 and HTL3 and the electron blocking layers EBL2 and EBL3 may be formed as a single layer in which their respective materials are blended with each other.

[0144] The hole blocking layers HBL2 and HBL3 can be respectively disposed between the light emitting material layers EML2 and EML3 and the electron transport layers ETL2 and ETL3. The hole blocking layers HBL2 and HBL3 can include the above-mentioned electron transport material or the above-mentioned electron transport material and a metal (or metal compound) so as to prevent or reduce the hole that has passed through the light emitting material layers EML2 and EML3 from being transported to the electron transport layers ETL2 and ETL3. In one or more embodiments, each of the above-mentioned electron transport layers ETL2 and ETL3 and the hole blocking layers HBL2 and HBL3 can be formed as a single layer in which their respective materials are blended with each other.

[0145] The electron injection layer EIL can be disposed between the fifth stack ST5 and the cathode electrode CE and is used to facilitate the injection of electrons from the cathode electrode CE into the plurality of stacks ST1, ST2, ST3, ST4, and ST5. The electron injection material is a compound having the ability to transport electrons and having excellent or appropriate electron injection effects. For example, the electron injection material can be tris(8-hydroxyquinoline)aluminum (Alq3), PBD, TAZ, spiro-PBD, BAlq, or bis(2-methyl-8-quinolinolato)(triphenylsiloxy)aluminum(III) (SAlq), but the present disclosure is not limited thereto. Additionally, the electron injection layer EIL can include a metal halide material, for example, any one selected from the group consisting of (for example, any one of the group consisting of): MgF2, LiF, NaF, KF, RbF, CsF, FrF, LiI, NaI, KI, RbI, CsI, FrI, and CaF2, but the present disclosure is not limited thereto. Additionally, the electron injection layer EIL can include a lanthanide material, such as Yb, Sm, or Eu. In one or more embodiments, the electron injection layer EIL can include both a metal halide material and a lanthanide material (for example, simultaneously include a metal halide material and a lanthanide material), such as RbI:Yb or KI:Yb. When the electron injection layer EIL includes both a metal halide material and a lanthanide material (for example, simultaneously includes both a metal halide material and a lanthanide material), the electron injection layer EIL can be formed by co-deposition of the metal halide material and the lanthanide material.

[0146] Although some of the plurality of stacks emit the same type or kind of component light, a method in which the plurality of stacks include the same material in the organic material layer and the resonance distance is adjusted by the thickness of the organic material layer can also be used to control the resonance region. In one or more embodiments, some of the plurality of stacks configured to emit the same type or kind of component light can include a material different from the material included in the organic material layer of other stacks among the plurality of stacks.

[0147] The charge generation layers CGL1, CGL2, CGL3, and CGL4 may be disposed between the plurality of stacks ST1, ST2, ST3, ST4, and ST5. The charge generation layers CGL1, CGL2, CGL3, and CGL4 may inject charges into the respective stacks ST1, ST2, ST3, ST4, and ST5 and adjust the charge balance between two adjacent stacks. The first charge generation layer CGL1 may be disposed between the first stack ST1 and the second stack ST2, the second charge generation layer CGL2 may be disposed between the second stack ST2 and the third stack ST3, the third charge generation layer CGL3 may be disposed between the third stack ST3 and the fourth stack ST4, and the fourth charge generation layer CGL4 may be disposed between the fourth stack ST4 and the fifth stack ST5. The charge generation layers CGL1, CGL2, CGL3, and CGL4 may respectively include an n-type or n-like charge generation layer CGL11, CGL21, CGL31, and CGL41 and a p-type or p-like charge generation layer CGL12, CGL22, CGL32, and CGL42. The n-type or n-like charge generation layers CGL11, CGL21, CGL31, and CGL41 may be respectively disposed on the electron transport layers ETL1, ETL2, ETL3, and ETL4, and the p-type or p-like charge generation layers CGL12, CGL22, CGL32, and CGL42 may be respectively disposed between the n-type or n-like charge generation layers CGL11, CGL21, CGL31, and CGL41 and the hole transport layers HTL2, HTL3, HTL4, and HTL5.

[0148] The charge generation layers CGL1, CGL2, CGL3, and CGL4 may have a structure in which the n-type or n-like charge generation layers CGL11, CGL21, CGL31, and CGL41 and the p-type or p-like charge generation layers CGL12, CGL22, CGL32, and CGL42 are respectively adhered to each other. The n-type or n-like charge generation layers CGL11, CGL21, CGL31, and CGL41 are disposed closer to the anode electrode ANO of the anode electrode ANO and the cathode electrode CE. The p-type or p-like charge generation layers CGL12, CGL22, CGL32, and CGL42 are disposed closer to the cathode electrode CE of the anode electrode ANO and the cathode electrode CE.

[0149] Stacks that emit component light of the same type or kind may have the same thickness or different thicknesses. In one or more embodiments, some of the multiple stacks configured to emit a first component light LE1 may have different thicknesses from each other. In one or more embodiments, some of the multiple stacks configured to emit a second component light LE2 may have different thicknesses from each other. The second stack ST2 and the third stack ST3 configured to emit blue light may have different thicknesses. Two of the first stack ST1, the fourth stack ST4, and the fifth stack ST5 configured to emit yellow-green light (e.g., two selected from the first stack ST1, the fourth stack ST4, and the fifth stack ST5 configured to emit yellow-green light) may have different thicknesses from each other, or all of the first stack ST1, the fourth stack ST4, and the fifth stack ST5 (e.g., all selected from the first stack ST1, the fourth stack ST4, and the fifth stack ST5) may have different thicknesses from each other. In one or more embodiments, the sum of the thicknesses of two stacks configured to emit a first component light LE1 and the sum of the thicknesses of three stacks configured to emit a second component light LE2 may be different from each other. In one or more embodiments, the hole transport layers HTL1, HTL2, HTL3, HTL4, and HTL5 of the first to fifth stacks ST1, ST2, ST3, ST4, and ST5 (e.g., the hole transport layers HTL1, HTL2, HTL3, HTL4, and HTL5 selected from the first to fifth stacks ST1, ST2, ST3, ST4, and ST5) may have different thicknesses from each other.

[0150] Each stack may have a vertical distance from the lower side of the hole transport layer to the upper side of the electron transport layer as its thickness.

[0151] The present disclosure is not limited to Figure 7 the structure, and the configuration and structure of the organic material layers of the light-emitting element may be changed so that the resonance regions of the first component light LE1 and the second component light LE2 overlap each other. Figure 8 is an enlarged cross-sectional view of a light-emitting element of a display device according to one or more embodiments.

[0152] Figure 8 the configuration of the stack of Figure 7 is different from the configuration of the stack of Figure 8 is the same as Figure 7 in that some of the multiple stacks (e.g., some selected from the multiple stacks) are configured to emit a first component light LE1, and other stacks of the multiple stacks (e.g., other selected from the multiple stacks) are configured to emit a second component light LE2.

[0153] The first light-emitting material layer EML1' of the first stack ST1' and the second light-emitting material layer EML2' of the second stack ST2' can be configured to emit a first component light LE1 (e.g., blue light). The third light-emitting material layer EML3' of the third stack ST3', the fourth light-emitting material layer EML4' of the fourth stack ST4', and the fifth light-emitting material layer EML5' of the fifth stack ST5' can be configured to emit a second component light LE2 (e.g., yellow light, yellow-green light, or green light).

[0154] The first stack ST1' and the second stack ST2' configured to emit blue light may respectively include a hole transport layer HTL1' and HTL2', an electron blocking layer EBL1' and EBL2', a light-emitting material layer EML1' and EML2', a hole blocking layer HBL1' and HBL2', and an electron transport layer ETL1' and ETL2' stacked in sequence. The third stack ST3', the fourth stack ST4', and the fifth stack ST5' configured to emit yellow light, yellow-green light, or green light may respectively include a hole transport layer HTL3', HTL4', and HTL5', a light-emitting material layer EML3', EML4', and EML5', and an electron transport layer ETL3', ETL4', and ETL5' stacked in sequence.

[0155] The light-emitting material layers of two adjacent stacks among the multiple stacks ST1', ST2', ST3', ST4', and ST5' can be configured to emit the same type or kind of component light. For example, the first light-emitting material layer EML1' of the first stack ST1' and the second light-emitting material layer EML2' of the second stack ST2' can be configured to emit a first component light LE1. In one or more embodiments, the third light-emitting material layer EML3' of the third stack ST3' and the fourth light-emitting material layer EML4' of the fourth stack ST4' can be configured to emit a second component light LE2. The present disclosure is not limited thereto, and two adjacent stacks can be configured to emit the same component light.

[0156] In one or more embodiments, some of the plurality of stacks configured to emit the first component light LE1 may have different thicknesses from each other. In one or more embodiments, some of the plurality of stacks configured to emit the second component light LE2 may have different thicknesses from each other. The first stack ST1' and the second stack ST2' configured to emit blue light may have different thicknesses from each other. Two of the third stack ST3', the fourth stack ST4', and the fifth stack ST5' configured to emit yellow light, yellow-green light, or green light may have different thicknesses from each other, or all of the third stack ST3', the fourth stack ST4', and the fifth stack ST5' may have different thicknesses from each other. In one or more embodiments, the sum of the thicknesses of two stacks configured to emit the first component light LE1 and the sum of the thicknesses of three stacks configured to emit the second component light LE2 may be different from each other. In one or more embodiments, the hole transport layers HTL1', HTL2', HTL3', HTL4', and HTL5' of the first to fifth stacks ST1', ST2', ST3', ST4', and ST5' (e.g., the hole transport layers HTL1', HTL2', HTL3', HTL4', and HTL5' selected from the first to fifth stacks ST1', ST2', ST3', ST4', and ST5') may have different thicknesses from each other.

[0157] As the material of the organic material layer applied to Figure 8 the light-emitting layer OL', the same material as that described in Figure 7 may be used.

[0158] Referring again to Figure 5 , the first capping layer CPL1 may be disposed on the cathode electrode CE. The first capping layer CPL1 may be used to improve the viewing angle characteristics and increase the external light-emitting efficiency. The first capping layer CPL1 may be disposed in the first emission region EA1, the second emission region EA2, the third emission region EA3, and the non-emission region NEA at the same time. The first capping layer CPL1 may completely cover the cathode electrode CE.

[0159] The first capping layer CPL1 may include at least one of an inorganic material and an organic material having light-transmitting characteristics. For example, the first capping layer CPL1 may be formed as an inorganic layer or formed as an organic layer (e.g., formed as an organic layer including inorganic particles). In one or more embodiments, the first capping layer CPL1 may include a triamine derivative, a carbazole biphenyl derivative, an arylenediamine derivative, and / or an aluminum chelate compound (e.g., Alq3), etc., but is not limited thereto.

[0160] The thin film encapsulation layer TFE of the light emitting unit 100 may be disposed on the first capping layer CPL1. The thin film encapsulation layer TFE may be used to protect the components located below the thin film encapsulation layer TFE from foreign substances and / or moisture or air. The thin film encapsulation layer TFE is disposed in the first emission region EA1, the second emission region EA2, the third emission region EA3, and the non-emission region NEA at the same time. The thin film encapsulation layer TFE may completely cover the first capping layer CPL1.

[0161] The thin film encapsulation layer TFE may include a lower inorganic encapsulation layer TFEa, an organic encapsulation layer TFEb, and an upper inorganic encapsulation layer TFEc that are sequentially stacked on the first capping layer CPL1.

[0162] By completely covering the first capping layer CPL1 in the display area DA, the lower inorganic encapsulation layer TFEa may cover the first light emitting element, the second light emitting element, and the third light emitting element. The organic encapsulation layer TFEb may be disposed on the lower inorganic encapsulation layer TFEa to completely cover the lower inorganic encapsulation layer TFEa. The upper inorganic encapsulation layer TFEc may be disposed on the organic encapsulation layer TFEb to completely cover the organic encapsulation layer TFEb.

[0163] In one or more embodiments, each of the lower inorganic encapsulation layer TFEa and the upper inorganic encapsulation layer TFEc may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride (SiO x N y ) and / or lithium fluoride, etc., but the present disclosure is not limited thereto.

[0164] In one or more embodiments, the organic encapsulation layer TFEb may be made of acrylic resin, methacrylic resin, polyisoprene resin, vinyl resin, epoxy resin, urethane resin, cellulose resin, and / or perylene resin, etc., but the present disclosure is not limited thereto.

[0165] Hereinafter, the light transmissive unit 300 will be described in Figure 5 more detail.

[0166] The light transmissive unit 300 may have a structure in which a second substrate 310, a color filter layer 320, a second capping layer CPL2, a light transmissive member, a bank pattern BK, and a third capping layer CPL3 are sequentially stacked on the other side (e.g., the lower side) in the third direction DR3.

[0167] The second substrate 310 of the light transmissive unit 300 can serve as a base of the light transmissive unit 300. The second substrate 310 can be made of a material having light transmissive characteristics. The second substrate 310 can be a glass substrate or a plastic substrate. When the second substrate 310 is a plastic substrate, the second substrate 310 can have elasticity. In one or more embodiments, if the second substrate 310 is a plastic substrate (e.g., when the second substrate 310 is a plastic substrate), the second substrate 310 can include polyimide, but the present disclosure is not limited thereto. As described above, in the third direction DR3, the light emitting unit 100 and the light transmissive unit 300 face each other, and thus, in the third direction DR3, the first substrate 110 of the light emitting unit 100 and the second substrate 310 of the light transmissive unit 300 can face each other.

[0168] The color filter layer 320 of the light transmissive unit 300 can be disposed on the other side of the second substrate 310 in the third direction DR3, i.e., disposed between the second substrate 310 and the light emitting unit 100. The color filter layer 320 can include a light filtering pattern area and a light blocking pattern unit BM. The light blocking pattern unit BM can be around (e.g., surrounding) the light filtering pattern area. The light filtering pattern area of the color filter layer 320 can define the light transmissive areas TA1, TA2, and TA3 of the light transmissive unit 300, and the light blocking pattern unit BM can define the light blocking area BA of the light transmissive unit 300.

[0169] As Figure 5 explained, the color filter layer 320 can include a first color filter 321, a second color filter 322, and a third color filter 323. The first color filter 321 can be configured to absorb (substantially) all of the second light and (substantially) all of the third light other than the first light (e.g., not absorb the first light or (substantially) not absorb any first light), the second color filter 322 can be configured to absorb (substantially) all of the first light and (substantially) all of the third light other than the second light (e.g., not absorb the second light or (substantially) not absorb any second light), and the third color filter 323 can be configured to absorb (substantially) all of the first light and (substantially) all of the second light other than the third light (e.g., not absorb the third light or (substantially) not absorb any third light). For example, the first color filter 321 can be configured to transmit the first light, the second color filter 322 can be configured to transmit the second light, and the third color filter 323 can be configured to transmit the third light.

[0170] In one or more embodiments, the first color filter 321 may be a blue color filter and may include a blue colorant. In the present specification, the colorant is a concept including both dyes and pigments (e.g., including both dyes and pigments simultaneously). The first color filter 321 may include a base resin, and the blue colorant may be dispersed in the base resin. In one or more embodiments, the second color filter 322 may be a green color filter and may include a green colorant. The second color filter 322 may include a base resin, and the green colorant may be dispersed in the base resin. In one or more embodiments, the third color filter 323 may be a red color filter and may include a red colorant. The third color filter 323 may include a base resin, and the red colorant may be dispersed in the base resin.

[0171] The first color filter 321 may include a first light filtering pattern region 321a and a first light blocking pattern region 321b around (e.g., surrounding) the first light filtering pattern region 321a. The second color filter 322 may include a second light filtering pattern region 322a and a second light blocking pattern region 322b around (e.g., surrounding) the second light filtering pattern region 322a. And the third color filter 323 may include a third light filtering pattern region 323a and a third light blocking pattern region 323b around (e.g., surrounding) the third light filtering pattern region 323a. For example, the first light filtering pattern region 321a of the first color filter 321 may overlap with the first light transmissive region TA1, and the first light blocking pattern region 321b of the first color filter 321 may be around (e.g., surrounding) the first light filtering pattern region 321a that overlaps with the first light transmissive region TA1 but may not overlap with the second light transmissive region TA2 and the third light transmissive region TA3, and may overlap with the light blocking region BA. The second light filtering pattern region 322a of the second color filter 322 may overlap with the second light transmissive region TA2, and the second light blocking pattern region 322b of the second color filter 322 may be around (e.g., surrounding) the second light filtering pattern region 322a that overlaps with the second light transmissive region TA2 but may not overlap with the first light transmissive region TA1 and the third light transmissive region TA3, and may overlap with the light blocking region BA. The third light filtering pattern region 323a of the third color filter 323 may overlap with the third light transmissive region TA3, and the third light blocking pattern region 323b of the third color filter 323 may be around (e.g., surrounding) the third light filtering pattern region 323a that overlaps with the third light transmissive region TA3 but may not overlap with the first light transmissive region TA1 and the second light transmissive region TA2, and may overlap with the light blocking region BA. For example, the light filtering pattern regions of the color filter layer 320 may include the first light filtering pattern region 321a of the first color filter 321, the second light filtering pattern region 322a of the second color filter 322, and the third light filtering pattern region 323a of the third color filter 323, and the light blocking pattern unit BM may have a structure in which the first light blocking pattern region 321b of the first color filter 321, the second light blocking pattern region 322b of the second color filter 322, and the third light blocking pattern region 323b of the third color filter 323 are stacked therein.

[0172] The first light filtering pattern region 321a of the first color filter 321 can be used as a blocking filter for blocking red light and green light. For example, the first light filtering pattern region 321a can selectively transmit first light (e.g., blue light) and block or absorb second light (e.g., green light) and third light (e.g., red light).

[0173] The second light filtering pattern region 322a of the second color filter 322 can be used as a blocking filter for blocking blue light and red light. For example, the second light filtering pattern region 322a can selectively transmit second light (e.g., green light) and block or absorb first light (e.g., blue light) and third light (e.g., red light).

[0174] The third light filtering pattern region 323a of the third color filter 323 can be used as a blocking filter for blocking blue light and green light. For example, the third light filtering pattern region 323a can selectively transmit third light (e.g., red light) and block or absorb first light (e.g., blue light) and second light (e.g., green light).

[0175] In one or more embodiments, the light blocking pattern unit BM may have a structure in which a first light blocking pattern region 321b, a third light blocking pattern region 323b, and a second light blocking pattern region 322b are sequentially stacked on the other side in the third direction DR3, but the present disclosure is not limited thereto. For example, the light blocking pattern unit BM may not be formed by the color filters 321, 322, and 323 described above, but may be formed by a coating and exposure process of a separate organic light blocking material. Hereinafter, for convenience of explanation, a structure in which the light blocking pattern unit BM has a first light blocking pattern region 321b, a third light blocking pattern region 323b, and a second light blocking pattern region 322b sequentially stacked on the other side in the third direction DR3 will be mainly described. The light blocking pattern unit BM can be configured to absorb all of the first light, all of the second light, and all of the third light by the above configuration.

[0176] The low refractive index layer LR can be disposed on the color filter layer 320. The low refractive index layer LR can recycle light by having a refractive index lower than those of a light transmissive layer TPL, a first wavelength conversion layer WCL1, and a second wavelength conversion layer WCL2, which will be described in more detail later, to induce total reflection of light traveling from the light transmissive layer TPL, the first wavelength conversion layer WCL1, and the second wavelength conversion layer WCL2 to the low refractive index layer LR.

[0177] In addition, the low refractive index layer LR can be used to compensate for and planarize the steps caused by the light-blocking pattern regions 321b, 322b, and 323b of the color filter layer 320. Accordingly, the second capping layer CPL2 disposed on the low refractive index layer LR can be formed to be flat. The thickness of the low refractive index layer LR in the light-blocking region BA can be different from the thickness of the low refractive index layer LR in the light-transmitting regions TA1, TA2, and TA3, and the thickness of the low refractive index layer LR in the light-blocking region BA can be less than the thickness of the low refractive index layer LR in the light-transmitting regions TA1, TA2, and TA3.

[0178] The second capping layer CPL2 of the light-transmitting unit 300 can be disposed on one surface of the low refractive index layer LR to cover the low refractive index layer LR. The second capping layer CPL2 can prevent or reduce the penetration of foreign substances and / or moisture or air from the outside into the low refractive index layer LR or the color filter layer 320, thereby damaging or contaminating the low refractive index layer LR and the light-blocking pattern unit BM and the light-filtering pattern region of the color filter layer 320. The second capping layer CPL2 can include an inorganic material. The second capping layer CPL2 can be formed as a single layer or multiple layers.

[0179] The refractive index of the second capping layer CPL2 can be greater than the refractive index of the low refractive index layer LR. In this case, total internal reflection can occur well on the low refractive index layer LR, and light can be recycled.

[0180] In Figure 5 , the dam pattern BK of the light-transmitting unit 300 can be disposed on the second capping layer CPL2 to form a space for accommodating a light-transmitting member that will be described in more detail later. The number of spaces for accommodating the light-transmitting member can be multiple, and each space can be separated from and / or isolated (e.g., spaced apart or separated) from each other. For example, the dam pattern BK can be used to separate the spaces in which the light-transmitting members are disposed. The dam pattern BK can be in direct contact with the second capping layer CPL2. In a plan view, the dam pattern BK can be around the light-transmitting member (e.g., surrounding the light-transmitting member). The dam pattern BK can be disposed to overlap with the non-emitting region NEA of the light-emitting unit 100 and the light-blocking region BA of the light-transmitting unit 300. The dam pattern BK can not overlap with the emitting regions EA1, EA2, and EA3 of the light-emitting unit 100 and the light-transmitting regions TA1, TA2, and TA3 of the light-transmitting unit 300.

[0181] In one or more embodiments, the dam pattern BK can include a photocurable organic material. For example, a photocurable organic material including a light-blocking material, but the present disclosure is not limited thereto.

[0182] The light-transmitting member of the light-transmitting unit 300 may be disposed on the second cover layer CPL2 exposed in a space separated and / or isolated (e.g., spaced apart or separated) from each other by the bank pattern BK. The light-transmitting member may include a light-transmitting layer TPL overlapping the first light-transmitting region TA1, a first wavelength conversion layer WCL1 overlapping the second light-transmitting region TA2, and a second wavelength conversion layer WCL2 overlapping the third light-transmitting region TA3. In one or more embodiments, the light-transmitting layer TPL, the first wavelength conversion layer WCL1, and the second wavelength conversion layer WCL2 may be referred to as a wavelength conversion layer or a wavelength conversion material layer in the claims.

[0183] The light-transmitting layer TPL may be disposed in a space separated by the bank pattern BK and may overlap the first emission region EA1 and the first light-transmitting region TA1 in the third direction DR3. The light-transmitting layer TPL may be in direct contact with the second cover layer CPL2 and the bank pattern BK.

[0184] The light-transmitting layer TPL may be a light-transmitting pattern that transmits incident light. For example, the emission light LE provided from the first light-emitting element is blue light as described above and may transmit through the light-transmitting layer TPL and the first light-filtering pattern region 321a of the first color filter 321, and then be emitted to the outside of the display device 1. For example, the first emission light L1 transmitted through the first light-transmitting region TA1 from the first emission region EA1 and then emitted to the outside may be blue light.

[0185] The light-transmitting layer TPL may include a base resin 330. The base resin 330 may be made of an organic material having a high light transmittance. In one or more embodiments, the base resin 330 may include an organic material such as an epoxy resin, an acrylic resin, a silicone resin, a carbazole resin, or an imide resin, but the present disclosure is not limited thereto.

[0186] When the light-transmitting layer TPL includes a light-scattering body, the light may be scattered in random directions regardless of the incident direction of the light transmitted through the first light-transmitting region TA1. When the total content (e.g., amount) of the light-scattering body included in the light-transmitting layer TPL is high, the front-side brightness ratio may be high, but the light efficiency is reduced.

[0187] When the resonance regions of the first component light LE1 and the second component light LE2 overlap with each other in the light-emitting layer OL of the light-emitting element, light can be scattered even if the light-transmitting layer TPL includes a small amount of light scatterers or does not include light scatterers, and the side visibility can be improved. In addition, the white angle difference depending on the viewing angle of the user can be small, and the light efficiency can be high. Accordingly, a display device in which the resonance regions of the first component light LE1 and the second component light LE2 overlap with each other can have both high light efficiency and high luminance (for example, have high light efficiency and high luminance at the same time). In one or more embodiments, the light-transmitting layer TPL may not include light scatterers (for example, any light scatterers may be excluded), or may include light scatterers in an amount of about 8.5 wt% or less or about 3 wt% or less based on the total weight of the light-transmitting layer TPL (100 wt% of the light-transmitting layer TPL).

[0188] The light-transmitting layer TPL may have a refractive index that is the same as or similar to the refractive index of the second capping layer CPL2. In one or more embodiments, the refractive index of the light-transmitting layer TPL may be greater than the refractive index of the low-refractive layer LR. When the second capping layer CPL2 does not have light scatterers, the refractive index of the second capping layer CPL2 may be the same as the refractive index of the base resin 330.

[0189] The first wavelength conversion layer WCL1 may be disposed in the space separated by the bank pattern BK and may overlap with the second emission region EA2 and the second light-transmitting region TA2 in the third direction DR3. The first wavelength conversion layer WCL1 may be in direct contact with the second capping layer CPL2 and the bank pattern BK.

[0190] The first wavelength conversion layer WCL1 may be a wavelength conversion pattern that converts or transforms the peak wavelength of the incident light into light having another specific peak wavelength and emits light having another specific peak wavelength. For example, as described above, the emitted light LE provided from the second light-emitting element is white light and can pass through the first wavelength conversion layer WCL1 and the second filter pattern region 322a of the second color filter 322 to be converted into green light having a peak wavelength in the range of about 510 nm to about 550 nm, and then emitted to the outside of the display device 1. For example, the second emitted light L2 transmitted through the second light-transmitting region TA2 from the second emission region EA2 and then emitted to the outside may be green light.

[0191] The first wavelength conversion layer WCL1 may include a base resin 330, light scatterers 331 dispersedly arranged in the base resin 330, and a first wavelength shifter 332 dispersedly arranged in the base resin 330.

[0192] The light scatterer 331 may have a refractive index different from that of the base resin 330 and may form an optical interface with the base resin 330. The light scatterer 331 may be light-scattering particles. Regardless of the incident direction of the incident light, the light scatterer 331 may scatter light in random directions, and substantially does not convert the wavelength of the light transmitted through the second light-transmitting region TA2.

[0193] The light scatterer 331 is a material that scatters at least some of the transmitted light and may include metal oxide particles or organic particles. In one or more embodiments, the light scatterer 331 may include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), and / or tin oxide (SnO2), etc. as metal oxide particles, and may include acrylic resins and / or urethane resins, etc. as organic particles, but the present disclosure is not limited thereto.

[0194] The first wavelength shifter 332 may convert or transform the peak wavelength of the incident light into another specific peak wavelength. The first wavelength shifter 332 may convert the emitted light LE, which is white light provided from the second light-emitting element, into green light having a single peak wavelength in the range of about 510 nm to about 550 nm and emit the green light.

[0195] In one or more embodiments, the first wavelength shifter 332 may be a quantum dot, a quantum rod, or a phosphor, but the present disclosure is not limited thereto. Hereinafter, for convenience of explanation, the first wavelength shifter 332 being a quantum dot will be mainly described. A quantum dot may be a particulate material that emits light of a specific color when an electron jumps from the conduction band to the valence band. A quantum dot may be a semiconductor nanocrystal material. Depending on the composition and size of the quantum dot, the quantum dot may have a specific bandgap to absorb light and then emit light having a unique wavelength. Examples of the semiconductor nanocrystals of the quantum dot may include semiconductor nanocrystals formed of Group IV elements or compounds, Group II-VI compounds, Group III-V compounds, Group IV-VI compounds, and / or one or more combinations thereof (e.g., any suitable combination).

[0196] The Group II-VI compounds may be selected from the group consisting of: binary compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures (e.g., combinations) thereof; ternary compounds selected from the group consisting of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and mixtures thereof.

[0197] The Group III-V compounds may be selected from the group consisting of: binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.

[0198] Group IV-VI compounds may be selected from the group consisting of: binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof. Group IV elements may be selected from the group consisting of: Si, Ge, and mixtures thereof. The Group IV compound may be a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0199] Here, the binary, ternary, or quaternary compound may be present in the particles at a substantially uniform concentration or a substantially non-uniform concentration (e.g., may be present in the particles in a state of partial or substantially different concentration distributions). Additionally, the quantum dots may have a core / shell structure in which one quantum dot surrounds another. The interface between the core and the shell may have a concentration gradient in which the concentration of the elements present in the shell decreases towards the center of the core.

[0200] In one or more embodiments, the quantum dots may have a core-shell structure that includes a core containing the above-described semiconductor nanocrystals and a shell around the core (e.g., surrounding the core). The shell of the quantum dots may be used as a passivation layer for maintaining semiconductor properties by preventing or reducing chemical denaturation of the core and / or as a charging layer for imparting electrophoretic properties to the quantum dots. The shell may be a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient in which the concentration of the elements present in the shell decreases towards the center of the core. Examples of the shell of the quantum dots may include metal oxides or non-metal oxides, semiconductor compounds, and / or combinations thereof, etc.

[0201] Examples of the metal oxide or non-metal oxide may include binary compounds (such as, SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO) or ternary compounds (such as, MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4), but the present disclosure is not limited thereto.

[0202] Additionally, examples of the semiconductor compound may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and / or AlSb, etc., but the present disclosure is not limited thereto.

[0203] The light emitted by the first wavelength shifter 332 may have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less, and thus, the color purity and color reproducibility of the colors displayed by the display device 1 can be further improved. In addition, regardless of the incident direction of the incident light, the light emitted by the first wavelength shifter 332 can be emitted in several directions. Thus, the lateral visibility of the second color displayed in the second light-transmitting region TA2 can be improved.

[0204] Some of the emission light LE provided from the second light-emitting element may not be converted into green light by the first wavelength shifter 332, and may transmit through the first wavelength conversion layer WCL1 and then be emitted. The component of the emission light LE whose wavelength is not converted by the first wavelength conversion layer WCL1 and is incident on the second filter pattern region 322a of the second color filter 322 may be blocked by the second filter pattern region 322a. In contrast, the green light converted by the first wavelength conversion layer WCL1 in the emission light LE transmits through the second filter pattern region 322a and then is emitted to the outside. For example, the second emission light L2 emitted to the outside of the display device 1 through the second light-transmitting region TA2 may be green light.

[0205] The second wavelength conversion layer WCL2 may be disposed in the space separated by the bank pattern BK, and may overlap with the third emission region EA3 and the third light-transmitting region TA3 in the third direction DR3. The second wavelength conversion layer WCL2 may be in direct contact with the second capping layer CPL2 and the bank pattern BK.

[0206] The second wavelength conversion layer WCL2 may be a wavelength conversion pattern that converts or transforms the peak wavelength of the incident light into light having another specific peak wavelength and emits light having another specific peak wavelength. For example, as described above, the emission light LE provided from the third light-emitting element is white light, and may transmit through the second wavelength conversion layer WCL2 and the third filter pattern region 323a of the third color filter 323 to be converted into red light having a peak wavelength in the range of about 610 nm to about 650 nm, and then be emitted to the outside of the display device 1. For example, the third emission light L3 transmitted through the third light-transmitting region TA3 from the third emission region EA3 and then emitted to the outside may be red light.

[0207] The second wavelength conversion layer WCL2 may include a base resin 330, a light scatterer 331 dispersedly disposed in the base resin 330, and a second wavelength shifter 333 dispersedly disposed in the base resin 330.

[0208] The second wavelength shifter 333 may convert or transform the peak wavelength of incident light into another specific peak wavelength. The second wavelength shifter 333 may convert the emitted light LE, which is white light provided from the third light-emitting element, into red light having a single peak wavelength in the range of about 610 nm to about 650 nm, and emit the red light. The second wavelength shifter 333 may not only convert blue light into red light, but also convert green light into red light, and emit the red light. In one or more embodiments, the second wavelength shifter 333 may be a quantum dot, a quantum rod, or a phosphor, but the present disclosure is not limited thereto. When the second wavelength shifter 333 is a quantum dot, if the first wavelength shifter 332 is a quantum dot as described above (e.g., when the first wavelength shifter 332 is a quantum dot as described above), the second wavelength shifter 333 has substantially the same configuration as the first wavelength shifter 332, and thus its description will not be provided.

[0209] Some of the emitted light LE provided from the third light-emitting element may not be converted into red light by the second wavelength shifter 333, and may be transmitted through the second wavelength conversion layer WCL2 and then emitted. The component of the emitted light LE whose wavelength is not converted by the second wavelength conversion layer WCL2 and is incident on the third filter pattern region 323a of the third color filter 323 may be blocked by the third filter pattern region 323a. In contrast, the red light converted by the second wavelength conversion layer WCL2 in the emitted light LE is transmitted through the third filter pattern region 323a and then emitted to the outside. For example, the third emitted light L3 emitted to the outside of the display device 1 through the third light-transmitting region TA3 may be red light.

[0210] The third capping layer CPL3 of the light-transmitting unit 300 may be disposed on the bank pattern BK, the light-transmitting layer TPL, the first wavelength conversion layer WCL1, and the second wavelength conversion layer WCL2, and may be used to prevent or reduce the penetration of impurities (such as moisture or air) from the outside, which may damage or contaminate the light-transmitting layer TPL, the first wavelength conversion layer WCL1, and the second wavelength conversion layer WCL2. The third capping layer CPL3 may cover the light-transmitting layer TPL, the first wavelength conversion layer WCL1, and the second wavelength conversion layer WCL2.

[0211] As described above, the filling unit 500 may be inserted between the light-emitting unit 100 and the light-transmitting unit 300 to fill the space between the light-emitting unit 100 and the light-transmitting unit 300. In one or more embodiments, the filling unit 500 may be in direct contact with the upper inorganic encapsulation layer TFEc of the thin film encapsulation layer TFE of the light-emitting unit 100 and the third capping layer CPL3 of the light-transmitting unit 300, but the present disclosure is not limited thereto.

[0212] In one or more embodiments, the filling unit 500 may be made of a material having an extinction coefficient substantially equal to 0. The refractive index and the extinction coefficient are related to each other, and as the refractive index decreases, the extinction coefficient also decreases. Additionally, if the refractive index is about 1.7 or less (e.g., when the refractive index is about 1.7 or less), the extinction coefficient may substantially converge to 0. In one or more embodiments, the filling unit 500 may be made of a material having a refractive index of about 1.7 or less, and accordingly, the phenomenon in which light provided from the self-luminous element is absorbed when passing through the filling unit 500 may be prevented, minimized, or reduced. In one or more embodiments, the filling unit 500 may be made of an organic material having a refractive index of about 1.4 to about 1.6.

[0213] Figure 9 A cross-sectional view of a part of a display device according to one or more embodiments is illustrated. Figure 10 is Figure 9 an enlarged view of region A3 of

[0214] As a method of adjusting the resonance periods of different component lights LE1 and LE2 to overlap with each other, in addition to the method of improving or optimizing the thickness of the organic material layer of the light-emitting layer OL, a method of making the thicknesses of the first to third anode electrodes ANO1, ANO2, and ANO3 different from each other may also be used.

[0215] The first anode electrode ANO1 may be disposed on the third insulating layer 160 in the first emission region EA1, the second anode electrode ANO2 may be disposed on the third insulating layer 160 in the second emission region EA2, and the third anode electrode ANO3 may be disposed on the third insulating layer 160 in the third emission region EA3.

[0216] One of the first to third anode electrodes ANO1, ANO2, and ANO3 (e.g., one selected from the first to third anode electrodes ANO1, ANO2, and ANO3) may have a different thickness from another of the first to third anode electrodes ANO1, ANO2, and ANO3 (e.g., another selected from the first to third anode electrodes ANO1, ANO2, and ANO3). In one or more embodiments, the thickness t1 of the first anode electrode ANO1 may be different from the thickness t2 of the second anode electrode ANO2 and the thickness t3 of the third anode electrode ANO3. The thickness t2 of the second anode electrode ANO2 may be the same as or different from the thickness t3 of the third anode electrode ANO3. The thickness t1 of the first anode electrode ANO1 may be less than the thickness t2 of the second anode electrode ANO2.

[0217] The resonance period can be changed by the thicknesses of the first to third anode electrodes ANO1, ANO2, and ANO3 so as to match desired or required characteristics of each of the emission regions EA1, EA2, and EA3 and each of the light-transmitting regions TA1, TA2, and TA3.

[0218] Emission light LE emitted from light-emitting elements in the first to third emission regions EA1, EA2, and EA3 may be white light. The emission light LE may be a mixed light of a first component light LE1 and a second component light LE2. The first component light LE1 may be blue light, and the second component light LE2 may be yellow light, yellow-green light, or green light. The light-emitting layer OL may include a plurality of stacked bodies stacked in sequence on the first to third anode electrodes ANO1, ANO2, and ANO3, and each stacked body may be configured to emit the component lights LE1 and LE2.

[0219] First emission light L1 emitted from the first emission region EA1 and passing through the first light-transmitting region TA1 may be blue light, second emission light L2 emitted from the second emission region EA2 and passing through the second light-transmitting region TA2 may be green light, and third emission light L3 emitted from the third emission region EA3 and passing through the third light-transmitting region TA3 may be red light.

[0220] Configurations other than the first to third anode electrodes ANO1, ANO2, and ANO3 may each independently be the same as those described in Figure 5 and thus their descriptions will not be provided.

[0221] Hereinafter, light-emitting elements of one or more embodiments of the present disclosure will be described in more detail.

[0222] Manufacturing Example

[0223] A display device according to Example 1 is manufactured by manufacturing a light-emitting element (including a light-emitting layer), a first capping layer CPL1, and a thin-film encapsulation layer TFE including materials shown in Table 1 on a first substrate, manufacturing a light-transmitting unit 300 on a second substrate, and bonding the light-transmitting unit 300 and the thin-film encapsulation layer TFE to each other with a filling unit 500. In this case, the light-transmitting layer TPL of the light-transmitting unit 300 does not include a light-scattering body 331. A cross-section of the manufactured display device 1 may be as Figure 5 illustrated, and symbols of the layers shown in Table 1 have the same meanings as those described with reference to Figure 5 the description.

[0224] Table 1

[0225]

[0226] The specific structures of the materials described in Table 1 are as follows.

[0227]

[0228] In Table 1, for each layer including two or more types (kinds) of materials, the material after the semicolon (:) represents a dopant, and the content ratio of the dopant based on the total weight of the corresponding layer is described in parentheses in the "Thickness" column of Table 1. For example, the hole injection layer HIL includes TCPA and HAT-CN, and includes HAT-CN as a dopant, and the amount of HAT-CN included based on the total weight of the hole injection layer HIL is 10%.

[0229] In one or more embodiments, a display device (BBBG) according to Comparative Example 1 is manufactured by continuously depositing three stacks configured to emit blue light on the anode electrode ANO, and depositing one stack configured to emit green light on the last stack. The materials of the elements of Comparative Example 1 can be as shown in Table 2, and the symbols of the layers shown in Table 2 have the same meanings as those Figure 5 described.

[0230] Table 2

[0231]

[0232] The material GD described in Table 2 is as follows, and other materials are as shown in Table 1.

[0233]

[0234] A display device according to Comparative Example 2 is manufactured in substantially the same manner as Comparative Example 1, except that a light scatterer 331 is included in the light transmissive layer TPL of the light transmissive unit 300 according to Comparative Example 1, while the light scatterer 331 is not included in the light transmissive layer TPL of the light transmissive unit 300 according to Comparative Example 2.

[0235] As shown in Table 3, the structures of the display devices according to Comparative Example 1, Comparative Example 2, and Example 1 are compared with each other.

[0236] Table 3

[0237]

[0238] In Table 3, O indicates presence, and X indicates absence.

[0239] Evaluation Example 1, White Angular Difference (WAD) Comparison

[0240] Measure the WAD characteristics of the display devices according to Comparative Example 1, Comparative Example 2, and Example 1.

[0241] The color deviation (Δu’v’) according to the viewing angle is measured and shown in Table 4. u’v’ refers to the color coordinate values in the CIE u’v’ coordinate system of the International Commission on Illumination, and the larger the color deviation (Δu’v’), the more likely it is to be regarded as a speckle in the eyes of the user.

[0242] Table 4

[0243]

[0244] Referring to Table 4, the light-transmitting layer TPL of Comparative Example 2 does not include the light-scattering body 331, and compared with Comparative Example 1, the WAD characteristics of Comparative Example 2 are significantly deteriorated. It can be seen that even if the light-transmitting layer TPL of the light-transmitting unit 300 does not include the light-scattering body, Example 1 shows equivalent WAD characteristics to Comparative Example 1 including the light-scattering body.

[0245] Evaluation Example 2, Light Efficiency Comparison

[0246] The CIEx and CIEy (Rx, Ry, Gx, Gy, Bx, and By) of red light, green light, and blue light are measured using an IVL measuring device, and the red light efficiency, green light efficiency, and blue light efficiency (R_Eff, G_Eff, and B_Eff) and the white light efficiency (W_Eff) are shown in Table 5.

[0247] Table 5

[0248]

[0249] In Table 5, "ΔEff" means Δ efficiency, and "(0.280, 0.277)" means the color coordinates.

[0250] Referring to Table 5, it can be seen that the display devices according to Comparative Example 2 and Example 1 in which the light-transmitting layer TPL does not include the light-scattering body 331 have high blue light efficiency. However, it can be seen that the white light efficiency is much higher in Example 1 where the resonance regions overlap with each other compared with Comparative Example 1 and Comparative Example 2.

[0251] Accordingly, it can be seen that even when the angle changes (for example, when the angle changes), the display device 1 according to one or more embodiments of the present disclosure also has a small white angle difference depending on the viewing angle of the user and has high light efficiency.

[0252] The display device, electronic device, electronic equipment, or any other related device or component according to an embodiment of the present disclosure described herein can be implemented using any suitable hardware, firmware (e.g., application specific integrated circuit), software, or a combination of software, firmware, and hardware. For example, the various components of the device can be formed on one integrated circuit (IC) chip or on separate IC chips. Further, the various components of the device can be implemented on a flexible printed circuit film, tape carrier package (TCP), or printed circuit board (PCB), or formed on a substrate. Further, the various components of the device can be processes or threads running on one or more processors in one or more computing devices, executing computer program instructions and interacting with other system components to perform the various functions described herein. The computer program instructions are stored in a memory, which can be implemented in a computing device using a standard storage device, such as, for example, random access memory (RAM). The computer program instructions can also be stored in other non-transitory computer-readable media, such as, for example, a CD-ROM or a flash drive, etc. And, those skilled in the art should recognize that, without departing from the scope of the embodiments of the present disclosure, the functions of various computing devices can be combined or integrated into a single computing device, or the functions of a particular computing device can be distributed over one or more other computing devices.

[0253] The embodiments of the present disclosure have been described above with reference to the accompanying drawings, but those of ordinary skill in the art to which the present disclosure pertains will understand that one or more appropriate modifications and changes can be made without departing from the technical spirit or essential aspects of the present disclosure. Therefore, it should be understood that the above one or more embodiments are illustrative in all respects and not restrictive.

Claims

1. A display device, comprising: A first substrate including a first emission region and a second emission region spaced apart from each other; A first light-emitting element on the first substrate and overlapping with the first emission region, and a second light-emitting element on the first substrate and overlapping with the second emission region; A light-transmitting layer on the first light-emitting element; And A first wavelength conversion layer on the second light-emitting element and including a light scatterer, Wherein each of the first light-emitting element and the second light-emitting element includes four or more stacked bodies, Wherein at least two selected from the four or more stacked bodies are configured to emit first component light, Wherein at least two selected from the four or more stacked bodies are configured to emit second component light, and Wherein any two adjacent stacked bodies selected from the four or more stacked bodies are configured to emit the first component light, and the other two adjacent stacked bodies selected from the four or more stacked bodies are configured to emit the second component light.

2. The display device according to claim 1, wherein the light-transmitting layer does not include the light scatterer, or the amount of the light scatterer included based on the total weight of the light-transmitting layer is 8.5 wt% or less.

3. The display device according to claim 1, wherein the first component light is blue light, and the second component light is yellow light, yellow-green light or green light, and The first light-emitting element and the second light-emitting element are configured to emit white light.

4. The display device according to claim 1, wherein the resonance regions of the first component light and the second component light overlap with each other.

5. The display device according to claim 1, wherein each of the first light-emitting element and the second light-emitting element includes an anode electrode, a hole injection layer on the anode electrode, a first stacked body on the hole injection layer, a second stacked body on the first stacked body, a third stacked body on the second stacked body, a fourth stacked body on the third stacked body, a fifth stacked body on the fourth stacked body, an electron injection layer on the fifth stacked body, and a cathode electrode on the electron injection layer, and Two stacked bodies selected from the first stacked body to the fifth stacked body are configured to emit the first component light, and the other three stacked bodies selected from the first stacked body to the fifth stacked body are configured to emit the second component light.

6. The display device according to claim 5, wherein the two stacked bodies configured to emit the first component light have different thicknesses from each other, and Two of the other three stacked bodies configured to emit the second component light have different thicknesses from each other.

7. The display device according to claim 5, wherein the sum of the thicknesses of the two stacked bodies selected from the two stacked bodies configured to emit the first component light is different from the sum of the thicknesses of the other three stacked bodies selected from the three stacked bodies configured to emit the second component light.

8. The display device according to claim 5, wherein the second stacked body and the third stacked body are configured to emit the first component light, and The first stack, the fourth stack, and the fifth stack are configured to emit the second component light.

9. The display device according to claim 5, wherein the first stack and the second stack are configured to emit the first component light, and the third stack, the fourth stack, and the fifth stack are configured to emit the second component light.

10. The display device according to claim 5, wherein the first stack to the fifth stack respectively include a first hole transport layer to a fifth hole transport layer, and the first hole transport layer to the fifth hole transport layer have different thicknesses from each other.

11. The display device according to claim 5, wherein each of the first light-emitting element and the second light-emitting element includes a first charge generation layer between the first stack and the second stack, a second charge generation layer between the second stack and the third stack, a third charge generation layer between the third stack and the fourth stack, and a fourth charge generation layer between the fourth stack and the fifth stack.

12. The display device according to claim 1, wherein the first wavelength conversion layer further includes a base resin and a first wavelength shifter.

13. A display device, comprising: a first substrate including a first emission region and a second emission region spaced apart from each other; a plurality of anode electrodes on the first substrate and in the first emission region and the second emission region; a light-emitting layer on the anode electrodes and including a plurality of stacks stacked in sequence; a cathode electrode on the light-emitting layer; a light-transmitting layer on the cathode electrode and overlapping with the first emission region; and a first wavelength conversion layer on the cathode electrode and overlapping with the second emission region, wherein a resonance region of the first component light emitted by at least one selected from the plurality of stacks and a resonance region of the second component light emitted by at least another selected from the plurality of stacks overlap each other.

14. The display device according to claim 13, wherein: the first component light is blue light, the second component light is yellow light, yellow-green light, or green light, and a fifth resonance region of the first component light and a fourth resonance region of the second component light overlap each other.

15. The display device according to claim 13, wherein the light-emitting layer includes two or more stacks configured to emit the first component light and two or more stacks configured to emit the second component light.

16. The display device according to claim 13, wherein the plurality of anode electrodes are reflective electrodes.

17. A display device, comprising: a first anode electrode and a second anode electrode spaced apart from each other on a first substrate; a light-emitting layer on the first anode electrode and the second anode electrode; a cathode electrode on the light-emitting layer; a light-transmitting layer on the cathode electrode and overlapping with the first anode electrode; and a first wavelength conversion layer on the cathode electrode and overlapping with the second anode electrode, The thickness of the first anode electrode and the thickness of the second anode electrode are different from each other.

18. The display device according to claim 17, wherein the thickness of the first anode electrode is less than the thickness of the second anode electrode.

19. The display device according to claim 17, wherein the light-emitting layer includes a plurality of stacked bodies, and wherein a resonance region of first component light emitted from at least one selected from the plurality of stacked bodies and a resonance region of second component light emitted from at least another selected from the plurality of stacked bodies overlap each other.

20. The display device according to claim 19, wherein the first component light is blue light, and the second component light is yellow light, yellow-green light, or green light.