Semiconductor integrated device, manufacturing method and display panel

Abstract

The invention provides a semiconductor integrated device, a manufacturing method and a display panel, and the semiconductor integrated device comprises a substrate which comprises a first region and a second region which are adjacent to each other; the light-emitting unit is arranged on the first area; the high electron mobility transistor is arranged on the second region; the high electron mobility transistor comprises a channel layer, a space layer arranged on the channel layer, a barrier layer arranged on the space layer, a photosensitive grid electrode, a source electrode and a drain electrode. Wherein the source electrode and the drain electrode are electrically connected with the channel layer, and the photosensitive grid electrode is located on the barrier layer; the high electron mobility transistor detects the intensity of the light signal emitted by the light-emitting unit through the photosensitive grid electrode, and outputs a corresponding detection electric signal according to the intensity of the light signal. The application can quickly respond to the change of the luminous intensity of the luminous unit, so that the driving voltage of the luminous unit can be adjusted in a targeted manner, and the luminous uniformity is ensured.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuit applications, and particularly to a semiconductor integrated device, a manufacturing method, and a display panel. Background Art

[0002] The full-color micro LED direct display technology needs to arrange tiny R, G, and B color chips on the panel respectively. Due to problems such as chip individual differences and driving IC (Integrated circuit) trace impedance, the display color brightness changes. The existing technology adjusts and eliminates the uneven display color on the same panel due to parasitic resistance, capacitance, and inductance through a relatively complex pixel circuit driving design, but still cannot solve the overall brightness reduction caused by light decay during product use. Summary of the Invention

[0003] In view of the above problems existing in the prior art, the present invention provides a semiconductor integrated device, a manufacturing method, and a display panel, mainly solving the problem of uneven display color caused by the attenuation of the light emission brightness of the existing display panel.

[0004] To achieve the above and other purposes, the technical solutions adopted by the present invention are as follows.

[0005] The present application provides a semiconductor integrated device, including: a substrate including adjacent first and second regions; a light-emitting unit disposed on the first region; a high electron mobility transistor disposed on the second region; the high electron mobility transistor includes a channel layer, a spacer layer disposed on the channel layer, a barrier layer disposed on the spacer layer, a photosensitive gate, a source electrode, and a drain electrode; wherein, the source electrode and the drain electrode are respectively electrically connected to the channel layer, and the photosensitive gate is located on the barrier layer; the high electron mobility transistor detects the intensity of the optical signal emitted by the light-emitting unit through the photosensitive gate and outputs a corresponding detection electrical signal according to the intensity of the optical signal.

[0006] In an embodiment of the present application, the photosensitive gate and the light-emitting unit have the same first epitaxial stack structure.

[0007] In an embodiment of the present application, the first epitaxial stack structure includes: a first conductivity type semiconductor layer, a photosensitive layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the photosensitive layer.

[0008] In an embodiment of the present application, the light-emitting unit further includes a first polarity electrode and a second polarity electrode; the first polarity electrode is electrically connected to the first conductivity type semiconductor layer of the light-emitting unit, and the second polarity electrode is electrically connected to the second conductivity type semiconductor layer of the light-emitting unit.

[0009] In an embodiment of the present application, a second epitaxial stack structure is further disposed between the light-emitting unit and the substrate. The second epitaxial stack structure is the same as the epitaxial stack structure of the high electron mobility transistor, and the first epitaxial stack structure is grown after the second epitaxial stack structure.

[0010] In an embodiment of the present application, the epitaxial stack structure further includes a buffer layer and a high-resistance layer disposed on the substrate, and the channel layer is disposed on the high-resistance layer.

[0011] In an embodiment of the present application, the buffer layer includes a superlattice structure composed of AlN, GaN, and / or AlGaN, or a graded transition structure composed of multiple layers of Al x Ga 1-x N, where the value of x ranges from 0.3 to 0.9.

[0012] In an embodiment of the present application, the semiconductor integrated device further includes a passivation layer disposed on the light-emitting unit and the high electron mobility transistor; the passivation layer includes one or more low-refractive-index materials and a distributed Bragg reflector.

[0013] The present application also provides a method for manufacturing a semiconductor integrated device, including: providing a substrate including a first region and a second region disposed adjacent to each other; fabricating a light-emitting unit on the first region; fabricating a high electron mobility transistor on the second region, the high electron mobility transistor including a channel layer, a spacer layer disposed on the channel layer, a barrier layer disposed on the spacer layer, a photosensitive gate, a source electrode, and a drain electrode; wherein the source electrode and the drain electrode are respectively electrically connected to the channel layer, and the photosensitive gate is located on the barrier layer; the high electron mobility transistor detects the intensity of the optical signal emitted by the light-emitting unit through the photosensitive gate and outputs a corresponding detection electrical signal according to the intensity of the optical signal.

[0014] The present application also provides a driving circuit for a semiconductor integrated device, including: a feedback sub-circuit electrically connected to the high electron mobility transistor to receive the detection electrical signal between the source electrode and the drain electrode and output a feedback voltage according to the detection electrical signal; a driving sub-circuit electrically connected to the light-emitting unit to provide a driving voltage for the light-emitting unit and adjust the magnitude of the driving voltage according to the feedback voltage.

[0015] The present application also provides a display panel, including: a plurality of the semiconductor integrated devices and a driving circuit; wherein the driving circuit is electrically connected to the semiconductor integrated devices.

[0016] As described above, a semiconductor integrated device, a manufacturing method, a driving circuit, and a display panel proposed by the present application have the following beneficial effects.

[0017] In the present application, by integrating a light-emitting unit onto the structure of a high electron mobility transistor, the light emitted by the light-emitting unit irradiates the photosensitive gate of the high electron mobility transistor, enabling the high electron mobility transistor to convert the optical signal into a detection electrical signal. Based on this detection electrical signal, the light emission intensity of the current light-emitting unit can be determined. When the light emission brightness decays, the detection electrical signal will also change accordingly. Furthermore, the driving voltage of the light-emitting unit can be adjusted according to the change of the detection electrical signal, thereby effectively improving the problem of uneven light emission of the display panel and enhancing the display effect. Description of the Drawings

[0018] Figure 1 It is a schematic cross-sectional structure diagram of a semiconductor integrated device in an embodiment of the present application.

[0019] Figure 2 It is a top view of a semiconductor integrated device in an embodiment of the present application.

[0020] Figure 3 It is a schematic cross-sectional structure diagram of a high electron mobility transistor in an embodiment of the present application.

[0021] Figure 4 It is a schematic flow chart of the manufacturing method of a semiconductor integrated device in an embodiment of the present application.

[0022] Figure 5 It is a schematic cross-sectional structure diagram of a display panel in an embodiment of the present application.

[0023] Figure 6 It is a schematic diagram of the driving circuit principle of a semiconductor integrated device in an embodiment of the present application.

[0024] Description of the Reference Numerals in the Drawings:

[0025] 01 - Substrate; 02 - Buffer layer; 03 - High-resistance layer; 04 - Channel layer; 05 - Spacer layer; 06 - Barrier layer; 07 - Semiconductor base layer; 08 - Second-polarity electrode; 09 - First-polarity electrode; 10 - First-conductive-type semiconductor layer; 11 - Photosensitive layer; 12 - Second-conductive-type semiconductor layer; 13 - Conductive layer; 14 - Light-transmitting layer; 15 - Reflective layer; 16 - Source electrode; 17 - Drain electrode; 18 - Photosensitive gate; 19 - High electron mobility transistor; 20 - Light-emitting unit; M1 - First MOS transistor; M2 - Second MOS transistor; C - Capacitor. Detailed Embodiments

[0026] The following describes the embodiments of the present invention through specific examples. Those skilled in the art can easily understand the other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments. The details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, without conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0027] It should be noted that the diagrams provided in the following embodiments only illustrate the basic concept of the present invention in a schematic manner. Therefore, only the components related to the present invention are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0028] Term Explanation:

[0029] Superlattice structure: A structure obtained by alternately arranging two or more semiconductor materials in a certain period along a specific growth direction.

[0030] Two-dimensional electron gas is a system in which the movement of an electron group in one direction is confined to a very small range by physical methods such as quantum confinement, and the electrons can move freely in the other two directions. If the electron density in the system is low, it is called a two-dimensional electron gas. If the movement of electrons in a three-dimensional solid is blocked (restricted) in a certain direction (such as the z direction), then the electrons can only move freely in the other two directions (x and y directions), and this kind of free electron with two degrees of freedom is called a two-dimensional electron gas.

[0031] Distributed Bragg Reflector (DBR) is a periodic structure composed of two materials with different refractive indices arranged alternately in the ABAB manner, and the optical thickness of each layer of material is 1 / 4 of the central reflection wavelength. The energy gap position can be adjusted by changing the refractive index and thickness of the materials.

[0032] Please refer to Figure 1 、 Figure 2 and Figure 6 , Figure 1 which is a schematic cross-sectional structure diagram of a semiconductor integrated device in an embodiment of the present application. Figure 2 which is a top view of a semiconductor integrated device in an embodiment of the present application. The semiconductor integrated device includes a substrate 01, a high electron mobility transistor 19, and a light emitting unit 20.

[0033] In one embodiment, the light-emitting unit 20 may include a light-emitting diode (LED), a micro-LED, a mini-LED, etc. The light-emitting unit 20 may be a red light-emitting unit, a green light-emitting unit, or a blue light-emitting unit. Specifically, the light-emitting unit 20 may include a first epitaxial stack structure, a conductive layer 13, a second-polarity electrode 08, and a first-polarity electrode 09. The first epitaxial stack structure is disposed on a side of the first region facing away from the substrate 01, and the conductive layer 13 is disposed on a side of the first epitaxial stack structure facing away from the substrate 01. The first epitaxial stack structure includes a first-conductive-type semiconductor layer 10, a photosensitive layer 11, and a second-conductive-type semiconductor layer 12 stacked in sequence in a direction away from the substrate 01. The second-polarity electrode 08 is connected to the conductive layer 13, and the first-polarity electrode 09 is electrically connected to the first-conductive-type semiconductor layer 10. Exemplarily, the first-conductive-type semiconductor layer 10 is an N-type GaN, the second-conductive-type semiconductor is a P-type GaN, the photosensitive layer 11 adopts an InGaN / GaN multi-quantum well structure, the conductive layer 13 may adopt ITO, the second-polarity electrode 08 is a P electrode, the first-polarity electrode 09 is an N electrode, the P electrode may be embedded in the ITO layer, and the N electrode penetrates through the ITO layer, the P-type GaN layer, the photosensitive layer 11, and is connected to the N-type GaN layer. By adjusting the In component in the photosensitive layer 11, light emission in different wavelength bands from 450 nm to 650 nm can be achieved (i.e., red, green, and blue light emission can be achieved).

[0034] Please refer to Figure 3 and Figure 6 , in one embodiment, the photosensitive gate 18 has the same first epitaxial stack structure as the light-emitting unit 20. Specifically, the first epitaxial stack structure of the photosensitive gate 18 includes a first-conductive-type semiconductor layer 10, a photosensitive layer 11 disposed on the first-conductive-type semiconductor layer 10, and a second-conductive-type semiconductor layer 12 disposed on the photosensitive layer 11.

[0035] Please refer to Figure 1 , Figure 3 and Figure 6 , in one embodiment, the first-polarity electrode 09 of the light-emitting unit 20 may be disposed at a position away from the second region to prevent the downwardly extending first-polarity electrode 09 from blocking the optical path of the light-emitting unit 20 propagating to the photosensitive gate 18. The position of the second-polarity electrode 08 may be disposed close to the second region. Of course, it can also be adjusted according to actual application requirements, and there is no limitation here.

[0036] Please refer to Figure 1 and Figure 6, in one embodiment, a second epitaxial stack structure is further disposed between the first epitaxial stack structure of the light-emitting unit 20 and the substrate 01, and the second epitaxial stack structure is the same as the epitaxial stack structure of the high electron mobility transistor 19. The epitaxial stack structure of the high electron mobility transistor 19 may further include a buffer layer 02 and a high-resistance layer 03. The buffer layer 02 is disposed on the substrate 01, and the high-resistance layer 03 is disposed on the buffer layer 02. The second epitaxial stack structure and the epitaxial stack structure of the high electron mobility transistor 19 are grown on the basis of the high-resistance layer 03.

[0037] Please refer to Figure 3 and Figure 6 , in one embodiment, the epitaxial stack structure of the high electron mobility transistor 19 includes a channel layer 04, a spacer layer 05 disposed on the channel layer 04, a barrier layer 06 disposed on the spacer layer 05, and a semiconductor base layer 07 disposed on the barrier layer 06. The first epitaxial stack structures of the light-emitting unit 20 and the photosensitive gate 18 are grown after the second epitaxial stack structure. Specifically, the epitaxial stack structure of the high electron mobility transistor 19 includes: a channel layer 04 disposed on the side of the high-resistance layer 03 away from the substrate 01; a spacer layer 05 disposed on the side of the channel layer 04 away from the substrate 01; a barrier layer 06 disposed on the side of the spacer layer 05 away from the substrate 01; a semiconductor base layer 07 disposed on the side of the barrier layer 06 away from the substrate 01. The photosensitive gate 18 or the light-emitting unit 20 is disposed on the side of the semiconductor base layer 07 away from the barrier layer 06; wherein the channel layer 04, the spacer layer 05, and the barrier layer 06 form a heterostructure, and the photosensitive gate 18 receives the optical signal of the light-emitting unit 20 to form a two-dimensional electron gas in the spacer layer 05, so as to form a detection electrical signal based on the two-dimensional electron gas. Exemplarily, the channel layer 04 may be made of UGaN, the barrier layer 06 may be made of AlGaN, and the semiconductor base layer 07 may be made of GaN-Cap. The photosensitive gate 18 of the high electron mobility transistor 19 is grown on the basis of GaN-Cap.

[0038] Please refer to Figure 1 and Figure 6 , in one embodiment, the high-resistance layer 03 may be made of unintentionally doped GaN. As an insulating layer, the high-resistance layer 03 has the characteristics of high impedance and high light transmittance, and can be used to block the leakage current of the light-emitting unit 20 from flowing to the high electron mobility transistor 19, reducing the influence on the detection current signal.

[0039] Please refer to Figure 1 , in one embodiment, the substrate 01 may be made of silicon, sapphire, silicon carbide, aluminum nitride, or gallium nitride. The buffer layer 02 may be a superlattice structure obtained by any combination of AlN, GaN, and AlGaN, or multiple layers of Al x Ga 1-xA graded transition structure composed of N components, where the value of x ranges from 0.3 to 0.9, and each layer of Al x Ga 1-x In N, the value of x can be set differently, or multiple layers can be selectively set to have the same composition, which can be specifically set according to actual application requirements and is not limited here.

[0040] Please refer to Figure 2 、 Figure 3 and Figure 6 , Figure 3 FIG. 14 is a schematic cross-sectional structure diagram of a high electron mobility transistor 19 in an embodiment of the present application. The photosensitive gate 18 is usually disposed near the source electrode 16 to reduce the influence of the drain electrode 17 voltage on the detection result. The source electrode 16 and the gate of the high electron mobility transistor 19 are respectively located on both sides of the photosensitive gate 18, and both the source electrode 16 and the drain electrode 17 extend to the channel layer 04, and a two-dimensional electron gas is formed in the spacer layer 05, and then a detection electrical signal will be formed between the source electrode 16 and the drain electrode 17.

[0041] Please refer to Figure 3 and Figure 6 ,In one embodiment, the spacer layer 05 can make the electrons in the barrier layer 06 more likely to transfer to the contact surface between the spacer layer 05 and the channel layer 04 to form a two-dimensional electron gas. The concentration of this two-dimensional electron gas is proportional to the brightness of the light-emitting unit 20. Exemplarily, the channel layer 04 can adopt UGaN, the barrier layer 06 can adopt AlGaN, and the heterostructure formed with the spacer layer 05 can be an AlN / GaN, InGaN / GaN or AlGaN / GaN heterointerface.

[0042] Please refer to Figure 3 and Figure 6 ,In one embodiment, in order to ensure that the light emitted by the light-emitting unit 20 can normally excite the photosensitive gate 18 of the high electron mobility transistor 19 to form a two-dimensional electron gas in the high electron mobility transistor 19, it is necessary that the bandgap of the photosensitive gate 18 in the high electron mobility transistor 19 is as consistent as possible with the bandgap of the first epitaxial stack structure in the light-emitting unit 20. Therefore, in the embodiment of the present application, the structural composition of the photosensitive gate 18 of the high electron mobility transistor 19 is set to be the same as the first epitaxial stack structure of the light-emitting unit 20 on the first region. That is, if the first epitaxial stack structure is a green light-emitting structure, the photosensitive gate 18 should also have the same structural composition as the green light-emitting structure. Only when the structural composition is ensured to be consistent can the reverse process of the light emission of the light-emitting unit 20 be utilized. When the photosensitive gate 18 receives light of a specific wavelength band, photo-generated carriers are generated, and then a two-dimensional electron gas is formed at the corresponding position of the high electron mobility transistor 19.

[0043] Please refer to Figure 1 、 Figure 2 andFigure 6 , in one embodiment, a passivation layer may further be provided on the basis of the light-emitting unit 20 and the high electron mobility transistor 19. The passivation layer includes a light-transmitting layer 14 and a reflective layer 15. The light-emitting unit 20 and the photosensitive gate 18 of the high electron mobility transistor 19 are connected through the light-transmitting layer 14. The light-transmitting layer 14 fills the gap between the first region and the second region, preventing the light emitted by the light-emitting unit 20 from being attenuated during propagation in the air, thereby affecting the accuracy of detection by the high electron mobility transistor 19. The light-transmitting layer 14 can be made of one or more low-refractive-index materials. Exemplarily, the light-transmitting layer 14 can be made of SiN x , SiO x , Al2O3 and other materials. The reflective layer 15 can be used to totally reflect external light to block the light of the external light source from entering the photosensitive gate 18. At the same time, the reflective layer 15 can reflect the light emitted by the internal light-emitting unit 20 back to the light-transmitting layer 14 to ensure the detection effect of the photosensitive gate 18. Exemplarily, the reflective layer 15 can adopt a distributed Bragg reflector DBR.

[0044] Based on the technical solution of this embodiment above, the high electron mobility transistor 19 adopts an AlGaN / GaN HEMT device, and the light-emitting unit 20 is a GaN-based light-emitting device. Both are wurtzite structures, have a similar heteroepitaxial bottom layer structure, and have the possibility of monolithic integration. The photosensitive detection transistor based on the AlGaN / GaN HEMT structure has a higher current gain and a lower signal-to-noise ratio compared with the traditional PIN detector, which is beneficial to the detection of small brightness differences. The photosensitive gate 18 of the high electron mobility transistor 19 converts a part of the optical signal adjacent to the light-emitting unit 20 into an electrical signal, and then detects the light-emitting intensity of the light-emitting unit 20, so as to dynamically adjust the light-emitting intensity of the light-emitting unit 20 and ensure the uniformity of the brightness of the light-emitting device.

[0045] Please refer to Figure 1 , Figure 3 , Figure 4 and Figure 6 , Figure 4 , which is a schematic flow chart of the manufacturing method of the semiconductor integrated device in an embodiment of the present application. The manufacturing method includes the following steps:

[0046] Step S400, provide a substrate 01, and the substrate 01 includes a first region and a second region arranged adjacent to each other.

[0047] Specifically, the substrate 01 can be made of materials such as silicon, sapphire, silicon carbide, aluminum nitride or gallium nitride. The specific material can be selected and adjusted according to actual application requirements, and is not limited here.

[0048] Step S410, fabricate a light-emitting unit 20 on the first region.

[0049] The light-emitting unit 20 may include a first epitaxial stack structure and a second epitaxial stack structure, and the first epitaxial stack structure is grown after the second epitaxial stack structure. The first epitaxial structure includes: a first-conductivity-type semiconductor layer 10, a photosensitive layer 11, and a second-conductivity-type semiconductor layer 12. A conductive layer 13 is fabricated on the second-conductivity-type semiconductor layer 12, and a second-polarity electrode 08 is embedded in the conductive layer 13. A first-polarity electrode 09 is electrically connected to the first-conductivity-type semiconductor layer 10.

[0050] Step S420: fabricate a high electron mobility transistor 19 on the second region. The high electron mobility transistor 19 includes a channel layer 04, a spacer layer 05 disposed on the channel layer 04, a barrier layer 06 disposed on the spacer layer 05, a photosensitive gate 18, a source electrode 16, and a drain electrode 17. Among them, the source electrode 16 and the drain electrode 17 are electrically connected to the channel layer 04, and the photosensitive gate 18 is located on the barrier layer 06. The high electron mobility transistor 19 detects the intensity of the optical signal emitted by the light-emitting unit 20 through the photosensitive gate 18 and outputs a corresponding detection electrical signal according to the intensity of the optical signal.

[0051] In one embodiment, the light-emitting unit 20 and the high electron mobility transistor 19 have the same first epitaxial stack structure. In addition, the second epitaxial stack structure of the light-emitting unit 20 is the same as the epitaxial stack structure of the high electron mobility transistor 19. The epitaxial stack structure of the high electron mobility transistor 19 includes a buffer layer 02, a high-resistance layer 03, a channel layer 04, a spacer layer 05, a barrier layer 06, and a semiconductor substrate layer 07.

[0052] In one embodiment, the buffer layer 02 may be any combination superlattice structure of AlN, GaN, and AlGaN, or an Al x Ga 1-x N (where x ranges from 0.3 to 0.9) composition gradually changing transition structure. The high-resistance layer 03 is grown on the basis of the buffer layer 02, and the high-resistance layer 03 is unintentionally doped.

[0053] On the basis of the substrate 01, the epitaxial stack structure and the second epitaxial stack structure are simultaneously grown, and there is a groove between them. The groove partially extends to the high-resistance layer 03. One side of the substrate 01 is separated into a first region and a second region through the groove, and there is no electrical connection between the first region and the second region.

[0054] Please refer to Figure 3 and Figure 6, in one embodiment, in order to enable the photosensitive gate 18 of the high electron mobility transistor 19 to generate a two-dimensional electron gas after receiving the light wave of the light emitting unit 20, it is necessary to ensure that the band gap widths of the photosensitive gate 18 and the first epitaxial stack structure of the light emitting unit 20 are the same, so that the wavelength band of the light wave emitted by the light emitting unit 20 is close to the wavelength band of the light wave received by the photosensitive gate 18. The photosensitive gate 18 utilizes the reverse process of the light emission of the light emitting unit 20 to generate a two-dimensional electron gas inside the high electron mobility transistor 19. Therefore, the photosensitive gate 18 and the first epitaxial stack structure of the light emitting unit 20 have the same compositional structure and can be fabricated together during manufacturing to improve the manufacturing efficiency. Specifically, on the basis of the first region and the second region, a first conductivity type semiconductor layer 10, a photosensitive layer 11, and a second conductivity type semiconductor layer 12 are sequentially grown. Thus, the first epitaxial stack structure of the light emitting unit 20 and the photosensitive gate 18 are obtained. After obtaining the first epitaxial stack structure of the light emitting unit 20, a conductive layer 13 can be continuously grown on the basis of the first epitaxial stack structure of the light emitting unit 20, and a second polar electrode 08 and a first polar electrode 09 are fabricated on the basis of the conductive layer 13. The first polar electrode 09 penetrates through the conductive layer 13, the second conductivity type semiconductor layer 12, and the photosensitive layer 11 and is electrically connected to the first conductivity type semiconductor layer 10; the second polar electrode 08 is electrically connected to the conductive layer 13. After fabricating the second polar electrode 08 and the first polar electrode 09, the light emitting unit 20 on the first region is obtained.

[0055] Please refer to Figure 3 and Figure 6 , in one embodiment, after fabricating the photosensitive gate 18, the drain 17 and the source 16 of the high electron mobility transistor 19 can be fabricated, and the drain 17 and the source 16 are respectively connected to the channel layer 04. After the photosensitive gate 18 receives the optical signal of the light emitting unit 20, a two-dimensional electron gas is formed at the heterostructure interface formed by the channel layer 04, the spacer layer 05, and the barrier layer 06. The two-dimensional electron gas causes a current change between the source 16 and the drain 17, thereby forming a detected current signal.

[0056] Please refer to Figure 1 and Figure 6 , in one embodiment, after fabricating the light emitting unit 20 and the high electron mobility transistor 19, a light transmissive layer 14 can be fabricated on the basis of the light emitting unit 20 and the high electron mobility transistor 19. The light transmissive layer 14 covers the side of the light emitting unit 20 and the high electron mobility transistor 19 facing away from the substrate 01 and connects the light emitting unit 20 and the photosensitive gate 18 of the high electron mobility transistor 19. The light of the light emitting unit 20 is conducted to the photosensitive gate 18 through the light transmissive layer 14 to avoid the attenuation of the light wave during propagation in the air.

[0057] In one embodiment, a reflective layer 15 may be provided on the outer sidewall of the light-transmitting layer 14. The light emitted by the light source outside the second region is blocked outside the reflective layer 15 by the reflective layer 15, avoiding the influence of the external light source on the detected electrical signal. At the same time, the reflective layer 15 can reflect the light transmitted by the light-transmitting layer 14 back to the light-transmitting layer 14.

[0058] Please refer to Figure 3 and Figure 6 In one embodiment, the driving sub-circuit may include a first MOS transistor M1, a second MOS transistor M2, and a capacitor C. The source of the second MOS transistor M2 is connected to the power supply voltage VDD. Its source and gate are connected through the capacitor C. The gate of the second MOS transistor M2 is also connected to the drain of the first MOS transistor M1. The gate and source of the first MOS transistor M1 are respectively connected to the scan signal Scan(n). The drain of the second MOS transistor M2 is connected to the positive terminal of the light-emitting unit 20. The negative terminal of the light-emitting unit 20 is connected to the output terminal of the feedback sub-circuit. The source 16 of the high electron mobility transistor 19 in the semiconductor integrated device is connected to VDD, and the drain 17 is connected to the input terminal of the feedback sub-circuit. When the scan signal Scan(n) arrives, the first MOS transistor M1 and the second MOS transistor M2 are successively turned on to provide the driving voltage VDD for the light-emitting unit 20. When the semiconductor integrated device detects that the light-emitting intensity of the light-emitting unit 20 decreases, it will output a detected current signal to the feedback sub-circuit to control the negative voltage of the light-emitting unit 20 based on the feedback sub-circuit, thereby enhancing the voltage difference between the two poles of the light-emitting unit 20 and increasing the brightness of the light-emitting unit 20. The driving sub-circuit here is only an exemplary circuit structure, and the specific circuit structure can be adjusted according to actual application requirements and is not limited here. The circuit structure of the feedback sub-circuit can also be set according to actual application requirements and is not limited here.

[0059] Please refer to Figure 5 , Figure 5 It is a schematic cross-sectional structure diagram of a display panel in an embodiment of the present application. The display panel is characterized by including: a plurality of the aforementioned semiconductor integrated devices and a driving circuit; wherein, the driving circuit is electrically connected to the semiconductor integrated device. Only the structural arrangement of one semiconductor integrated device in each layer of the display panel is shown in the figure. The display panel includes a glass substrate, a buffer layer 02, and an active layer LTPS disposed on the buffer layer 02. GE1 is a gate metal layer, SD1 and SD2 are drain metal layers, and GE2 is a source metal layer. The layers are filled with insulating materials between them.

[0060] Please refer to Figure 6 , Figure 6This is a schematic diagram of the driving circuit of a semiconductor integrated device in an embodiment of the present application. An embodiment of the present application also provides a driving circuit, which includes a feedback sub-circuit and a driving sub-circuit. The feedback sub-circuit is connected to the high electron mobility transistor 19 of the aforementioned semiconductor integrated device and receives the detection electrical signal of the high electron mobility transistor 19. Since this detection electrical signal is proportional to the light emission intensity of the light emitting unit 20 in the semiconductor integrated device. When the light emission intensity of the light emitting unit 20 decays, the detection electrical signal of the high electron mobility transistor 19 will also become smaller. After receiving the detection electrical signal, the feedback sub-circuit will output a feedback voltage to the driving sub-circuit according to the detection electrical signal, and the detection electrical signal is proportional to the feedback voltage. The driving sub-circuit provides a driving voltage for the light emitting unit 20 in the semiconductor integrated device. When the light emission brightness of the light emitting unit 20 decays, the two-dimensional electron gas concentration inside the high electron mobility transistor 19 changes, which in turn causes changes in the currents of the source 16 and the drain 17 of the high electron mobility transistor 19, and a detection electrical signal is obtained. When the detection electrical signal becomes smaller, the driving voltage of the driving sub-circuit is adjusted through the feedback voltage of the feedback sub-circuit, so that the driving voltage increases, thereby increasing the light emission intensity of the light emitting unit 20 and ensuring the uniformity of the light emission intensity of the light emitting unit 20. The output end of the driving sub-circuit can be connected to the positive electrode of the light emitting unit 20, and the output end of the feedback sub-circuit is connected to the negative electrode of the light emitting unit 20, and the light emission brightness of the light emitting unit 20 is controlled based on the voltage difference between the driving voltage and the feedback voltage.

[0061] The above embodiments are only illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A semiconductor integrated device, characterized in that, Comprising: A substrate including a first region and a second region disposed adjacent to each other; A light-emitting unit disposed on the first region; A high electron mobility transistor disposed on the second region; the high electron mobility transistor includes a channel layer, a spacer layer disposed on the channel layer, a barrier layer disposed on the spacer layer, a photosensitive gate, a source electrode, and a drain electrode; wherein the source electrode and the drain electrode are electrically connected to the channel layer respectively, and the photosensitive gate is located on the barrier layer; The high electron mobility transistor detects the intensity of the optical signal emitted by the light-emitting unit through the photosensitive gate and outputs a corresponding detection electrical signal according to the intensity of the optical signal.

2. The semiconductor integrated device according to claim 1, characterized in that, The photosensitive gate and the light-emitting unit have the same first epitaxial stack structure.

3. The semiconductor integrated device according to claim 2, wherein: The first epitaxial stack structure includes: a first conductivity type semiconductor layer, a photosensitive layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the photosensitive layer.

4. The semiconductor integrated device according to claim 3, characterized in that, The light-emitting unit further includes a first polarity electrode and a second polarity electrode; the first polarity electrode is electrically connected to the first conductivity type semiconductor layer of the light-emitting unit, and the second polarity electrode is electrically connected to the second conductivity type semiconductor layer of the light-emitting unit.

5. The semiconductor integrated device according to claim 3, wherein: A second epitaxial stack structure is further disposed between the light-emitting unit and the substrate, the second epitaxial stack structure is the same as the epitaxial stack structure of the high electron mobility transistor, and the first epitaxial stack structure is grown after the second epitaxial stack structure.

6. The semiconductor integrated device according to claim 5, wherein, The epitaxial stack structure further includes a buffer layer and a high-resistance layer disposed on the substrate, and the channel layer is disposed on the high-resistance layer.

7. The semiconductor integrated device according to claim 6, wherein, The buffer layer includes a superlattice structure composed of AlN, GaN, and / or AlGaN, or a graded transition structure composed of multiple layers of Al x Ga 1-x N, where the value of x ranges from 0.3 to 0.

9.

8. The semiconductor integrated device according to any one of claims 1 to 7, characterized in that, The semiconductor integrated device further includes a passivation layer disposed on the light-emitting unit and the high electron mobility transistor; The passivation layer includes one or more low refractive index materials and a distributed Bragg reflector.

9. A method for manufacturing a semiconductor integrated device, characterized in that, Comprising: Providing a substrate, the substrate including a first region and a second region disposed adjacent to each other; Fabricating a light-emitting unit on the first region; Fabricating a high electron mobility transistor on the second region, the high electron mobility transistor includes a channel layer, a spacer layer disposed on the channel layer, a barrier layer disposed on the spacer layer, a photosensitive gate, a source electrode, and a drain electrode; wherein the source electrode and the drain electrode are electrically connected to the channel layer respectively, and the photosensitive gate is located on the barrier layer; the high electron mobility transistor detects the intensity of the optical signal emitted by the light-emitting unit through the photosensitive gate and outputs a corresponding detection electrical signal according to the intensity of the optical signal.

10. A display panel, characterized in that, Comprising: A plurality of semiconductor integrated devices as described in any one of claims 1-8 and a driving circuit; wherein the driving circuit is electrically connected to the semiconductor integrated device.

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